WO2019230342A1 - Substrate treating device - Google Patents

Substrate treating device Download PDF

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Publication number
WO2019230342A1
WO2019230342A1 PCT/JP2019/018747 JP2019018747W WO2019230342A1 WO 2019230342 A1 WO2019230342 A1 WO 2019230342A1 JP 2019018747 W JP2019018747 W JP 2019018747W WO 2019230342 A1 WO2019230342 A1 WO 2019230342A1
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WO
WIPO (PCT)
Prior art keywords
substrate
peripheral wall
gas
processing apparatus
annular heating
Prior art date
Application number
PCT/JP2019/018747
Other languages
French (fr)
Japanese (ja)
Inventor
幸嗣 安藤
前川　直嗣
励 武明
陽介 安武
大地 吉冨
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2019230342A1 publication Critical patent/WO2019230342A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a substrate processing apparatus.
  • substrate in the manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the surface of the substrate.
  • substrate processing apparatus that supplies a chemical solution to a processing region at the peripheral edge of the upper surface of a substrate and performs processing such as etching on the processing region.
  • the substrate is attracted and held from below by the spin chuck, and a heater for heating the peripheral edge of the substrate from the lower surface side is provided around the spin chuck. By heating the substrate, the processing rate of the substrate with the chemical solution can be improved.
  • the atmosphere of the chemical solution flows near the lower surface of the substrate due to the airflow caused by the rotation of the substrate, and the thin film formed on the lower surface of the substrate is etched or altered (contaminated) by the chemical solution atmosphere.
  • the chemical liquid component is attached to the lower surface of the substrate and the substrate is accommodated in a hoop or the like, the chemical liquid component is transferred to another substrate facing the substrate, and the thin film on the other substrate is There is also the possibility of alteration.
  • the present invention is directed to a substrate processing apparatus, and is intended to suppress a gas generated from a processing liquid from adversely affecting a substrate.
  • the substrate processing apparatus includes a substrate holding unit that sucks and holds a central portion of a lower surface of a horizontal substrate, a substrate rotation mechanism that rotates the substrate holding unit about a central axis that faces in the vertical direction, and the substrate.
  • a processing liquid supply section for supplying a processing liquid to the upper surface or outer peripheral edge of the substrate, and a cylindrical shape surrounding the periphery of the substrate holding section and having an upper end close to the outer peripheral edge of the substrate, and is generated from the processing liquid
  • a protective peripheral wall portion that suppresses wraparound of the gas to be performed in the vicinity of the lower surface.
  • the present invention it is possible to prevent the gas generated from the processing liquid from flowing around the lower surface of the substrate, thereby preventing the gas from adversely affecting the substrate.
  • the substrate processing apparatus further includes a closing portion that closes the lower opening of the protective peripheral wall portion.
  • the substrate processing apparatus further includes an annular heating unit that heats the lower surface in proximity to the lower surface of the substrate around the substrate holding unit, and an outer peripheral edge portion of the annular heating unit However, it also serves as a portion including the upper end of the protective peripheral wall.
  • the substrate processing apparatus has a cylindrical shape surrounding the periphery of the substrate holding portion, and further includes an inner peripheral wall portion whose upper end is close to the inner peripheral edge portion of the annular heating portion.
  • the substrate processing apparatus further includes a gas ejection unit that is provided at an upper end of the inner peripheral wall portion disposed between the substrate holding unit and the annular heating unit and ejects an inert gas.
  • the substrate processing apparatus further includes a gas ejection portion that ejects an inert gas inside a space surrounded by the protective peripheral wall portion.
  • the substrate processing apparatus further includes an exhaust port that is disposed outside the protective peripheral wall portion and exhausts gas around the protective peripheral wall portion, and supplies the processing liquid to the substrate.
  • the lower end of the protective peripheral wall is disposed below the exhaust port.
  • FIG. 1 It is a figure which shows the structure of a substrate processing apparatus. It is a figure which expands and shows a part of substrate processing apparatus. It is a figure which shows the flow which a substrate processing apparatus processes a board
  • FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention.
  • the substrate processing apparatus 1 is an apparatus for processing a substrate 9 by supplying a processing liquid to the substrate 9.
  • the substrate processing apparatus 1 includes a spin chuck 21, a spin motor 22, a casing 23, a cup unit 3, a processing liquid supply unit 4, an upper surface gas supply unit 5, a heating unit 6, and a control unit (not shown). Is provided.
  • the controller is responsible for overall control of the substrate processing apparatus 1.
  • the spin chuck 21 is a disk-shaped member.
  • the outer diameter of the spin chuck 21 is smaller than the outer diameter of the disk-shaped substrate 9.
  • the upper surface of the spin chuck 21 extends in the horizontal direction.
  • the substrate 9 is placed on the upper surface of the spin chuck 21 so that the center thereof is located on the central axis of the spin chuck 21.
  • the spin chuck 21 faces a central portion of a main surface 92 (hereinafter referred to as “lower surface 92”) that faces the lower side of the substrate 9.
  • a region outside the center portion on the lower surface 92 of the substrate 9 does not face the spin chuck 21.
  • a plurality of suction holes are provided on the upper surface of the spin chuck 21.
  • the central portion of the lower surface 92 of the substrate 9 is sucked and held by a plurality of suction holes. In this manner, the substrate 9 is held in a horizontal state (that is, in a horizontal posture) by the spin chuck 21 serving as the substrate holding unit.
  • the upper end of the shaft portion 221 is connected to the lower surface of the spin chuck 21.
  • the shaft portion 221 has a central axis J1 that faces the vertical direction (vertical direction).
  • the central axis J1 of the shaft portion 221 coincides with the central axis of the spin chuck 21.
  • the spin motor 22 which is a substrate rotation mechanism rotates the spin chuck 21 and the substrate 9 about the central axis J1 by rotating the shaft portion 221.
  • the casing 23 has a cylindrical shape with a lid, and houses the lower portion of the shaft portion 221 and the spin motor 22 therein.
  • On the upper surface of the casing 23, a central projecting portion 231 having a covered cylindrical shape is provided.
  • the shaft portion 221 protrudes upward from the upper surface of the central protrusion 231.
  • the outer diameter of the central protrusion 231 is larger than the outer diameter of the spin chuck 21.
  • the upper surface of the central protrusion 231 and the upper surface of the casing 23 spread in the
  • the cup part 3 includes a cup movable part 31, a cup fixing part 32, a cup elevating part (not shown), and an exhaust part 34.
  • the cup movable part 31 has a substantially cylindrical shape surrounding the periphery of the spin chuck 21.
  • the cup movable part 31 includes an inner cylindrical part 311, an outer cylindrical part 312, and an upper inclined part 313.
  • the inner cylindrical portion 311 and the outer cylindrical portion 312 are both cylindrical portions with the central axis J1 as the center.
  • the inner diameter of the outer cylindrical portion 312 is larger than the outer diameter of the inner cylindrical portion 311, and the outer cylindrical portion 312 surrounds the inner cylindrical portion 311 with a gap between the outer peripheral surface of the inner cylindrical portion 311.
  • the upper end portion of the inner cylindrical portion 311 and the upper end portion of the outer cylindrical portion 312 are connected to each other.
  • the upper inclined portion 313 is an annular plate-shaped portion that extends from the connection portion between the inner cylindrical portion 311 and the outer cylindrical portion 312 toward the central axis J1. Precisely, the upper inclined portion 313 is slightly inclined so as to be positioned on the upper side as it approaches the central axis J1.
  • the inner peripheral edge 314 of the upper inclined portion 313 protrudes downward over the entire circumference.
  • the inner peripheral edge 314 is positioned outside the outer peripheral edge of the substrate 9 held by the spin chuck 21 in the radial direction centered on the central axis J1.
  • the cup fixing part 32 has a substantially cylindrical shape surrounding the casing 23.
  • the cup fixing part 32 includes a fixed cylindrical part 321 and an annular bottom part 322.
  • the fixed cylindrical part 321 is a cylindrical part centering on the central axis J1.
  • the inner diameter of the fixed cylindrical portion 321 is larger than the outer diameter of the inner cylindrical portion 311, and the outer diameter of the fixed cylindrical portion 321 is smaller than the inner diameter of the outer cylindrical portion 312.
  • the upper portion of the fixed cylindrical portion 321 is disposed in a gap between the inner cylindrical portion 311 and the outer cylindrical portion 312.
  • the annular bottom portion 322 is an annular plate-shaped portion that extends from the lower end portion of the fixed cylindrical portion 321 toward the central axis J1.
  • the inner peripheral edge of the annular bottom portion 322 is connected to the outer peripheral surface of the casing 23 over the entire periphery.
  • the annular bottom 322 is provided with a discharge pipe (not shown).
  • the discharge pipe is connected to the gas-liquid discharge portion, and the gas and liquid in the vicinity of the annular bottom portion 322 are discharged to the outside.
  • the cup elevating part raises and lowers the cup movable part 31 in the vertical direction, and selectively places the cup movable part 31 in the upper position and the lower position.
  • the cup movable part 31 arranged at the upper position is indicated by a solid line
  • the cup movable part 31 arranged at the lower position is indicated by a two-dot chain line.
  • the processing liquid splashed from the substrate 9 is received by the inner peripheral surface of the cup movable section 31 by disposing the cup movable section 31 in the upper position.
  • the cup movable portion 31 is disposed at the lower position, thereby preventing the cup movable portion 31 from interfering with an external transport mechanism.
  • the cup movable part 31 may be arrange
  • the exhaust part 34 is connected to the cup movable part 31, for example.
  • the exhaust part 34 reduces the gap between the fixed cylindrical part 321 and the outer cylindrical part 312 and the gap between the fixed cylindrical part 321 and the inner cylindrical part 311, thereby reducing the inside of the cup part 3 (that is, The gas in the space surrounded by the cup portion 3 is exhausted.
  • the annular exhaust port 341 is provided between the lower end of the inner cylindrical portion 311 and the fixed cylindrical portion 321.
  • the processing liquid supply unit 4 includes a nozzle head 41, a head moving mechanism 42, and a plurality of processing liquid supply sources 431 to 433.
  • the nozzle head 41 includes a plurality of nozzle portions 411 to 413.
  • a plurality of treatment liquid supply sources 431 to 433 are connected to the plurality of nozzle portions 411 to 413 through valves, respectively.
  • the number of the plurality of nozzle portions 411 to 413 (and the plurality of processing liquid supply sources 431 to 433) is 3, but may be 1, 2, or 4 or more.
  • the processing liquid supply source 431 supplies SC-1 (mixed liquid of ammonia and hydrogen peroxide solution) to the nozzle unit 411 as a processing liquid.
  • the processing liquid supply source 432 supplies DHF (dilute hydrofluoric acid) to the nozzle unit 412 as a processing liquid.
  • the processing liquid supply source 433 supplies the rinsing liquid as a processing liquid to the nozzle unit 413.
  • the rinse liquid is, for example, pure water.
  • Other types of processing liquid such as SC-2 (mixed liquid of hydrochloric acid and hydrogen peroxide solution) and hydrofluoric acid may be supplied to the nozzle portions 411 to 413. In each of the nozzle portions 411 to 413, the processing liquid is discharged downward.
  • the processing liquid discharged from the nozzle portions 411 to 413 is, for example, a liquid column shape, and may be a droplet shape.
  • the head moving mechanism 42 rotates the arm 421 about the central axis that faces in the vertical direction.
  • a nozzle head 41 is attached to the tip of the arm 421, and the nozzle head 41 is moved in the horizontal direction by the head moving mechanism 42.
  • the head moving mechanism 42 selectively arranges the nozzle head 41 at the processing position and the standby position.
  • the nozzle head 41 faces a main surface 91 (hereinafter referred to as “upper surface 91”) facing the upper side of the substrate 9 held by the spin chuck 21.
  • the plurality of nozzle portions 411 to 413 of the nozzle head 41 arranged at the processing position are opposed to the peripheral edge portion of the upper surface 91 in a state of being aligned along the circumferential direction.
  • the peripheral portion of the upper surface 91 is an annular region near the outer peripheral edge of the substrate 9. When the radius of the substrate 9 is 150 mm, the peripheral edge is an area having a width of several mm from the outer peripheral edge.
  • the plurality of nozzle portions 411 to 413 sequentially supply the processing liquid to the peripheral edge portion (more precisely, the outer peripheral edge) of the upper surface 91, the plurality of nozzle portions 411 to 413 supply the processing liquid.
  • the position of the nozzle head 41 may be finely adjusted by the head moving mechanism 42 so that the supplied radial position is the same. In the standby position, for example, the nozzle head 41 is disposed outside the cup portion 3 in the radial direction.
  • the upper surface gas supply unit 5 includes a blocking plate 51, a gas nozzle 52, a holding member 53, a gas supply source 54, and a blocking plate moving mechanism (not shown).
  • the blocking plate 51 is a disk-shaped member.
  • the lower surface of the blocking plate 51 extends in the horizontal direction.
  • the holding member 53 is a columnar member concentric with the blocking plate 51 and is attached to the upper surface of the blocking plate 51.
  • the holding member 53 and the blocking plate 51 are provided with a through hole at the center axis position.
  • the gas nozzle 52 is inserted into the through hole and fixed. The outlet of the gas nozzle 52 opens on the lower surface of the blocking plate 51.
  • a gas supply source 54 is connected to the gas nozzle 52 via a valve.
  • the gas supply source 54 supplies an inert gas to the gas nozzle 52 as a protective gas.
  • the inert gas is a gas having poor reactivity with the material of the substrate 9 and the thin film formed on the surface thereof, and is, for example, nitrogen gas, argon gas, helium gas or the like.
  • Other types of protective gas may be supplied to the gas nozzle 52. In the gas nozzle 52, the protective gas is ejected downward.
  • the blocking plate moving mechanism has the same structure as the head moving mechanism 42, for example, and moves the blocking plate 51 (and the gas nozzle 52 and the holding member 53) in the horizontal direction.
  • the blocking plate moving mechanism selectively arranges the blocking plate 51 at the facing position and the standby position.
  • the lower surface of the blocking plate 51 faces the upper surface 91 of the substrate 9 held by the spin chuck 21.
  • the gas nozzle 52 faces the center of the substrate 9 in the vertical direction.
  • the lower surface of the blocking plate 51 is parallel to the upper surface 91 of the substrate 9 and is close to the upper surface 91.
  • the standby position for example, the blocking plate 51 is disposed outside the cup portion 3 in the radial direction.
  • the gas nozzle 52 blows out the protective gas toward the center of the upper surface 91 of the substrate 9, so that the protection spreads outward through the gap between the upper surface 91 and the lower surface of the blocking plate 51.
  • a gas flow is formed.
  • the flow of the protective gas is directed from the central part of the upper surface 91 to the peripheral part over the entire circumference.
  • FIG. 2 is an enlarged view showing a part of the substrate processing apparatus 1.
  • the heating unit 6 includes an annular heating unit 61, a gas supply source 62, and a heating unit lifting mechanism (not shown).
  • the annular heating unit 61 includes a heating main body 611 and a heating element 612.
  • the heating main body 611 is made of ceramic such as silicon carbide (SiC), for example.
  • the heating main body 611 is an annular member centered on the central axis J ⁇ b> 1 and surrounds the periphery of the spin chuck 21.
  • the inner diameter of the heating main body 611 is larger than the outer diameter of the spin chuck 21.
  • the upper surface of the heating main body 611 extends in the horizontal direction and is parallel to the lower surface 92 of the substrate 9 held by the spin chuck 21.
  • the outer diameter of the heating main body 611 is slightly smaller than the outer diameter of the substrate 9.
  • the outer peripheral edge of the heating main body 611 overlaps the peripheral edge of the substrate 9 in the vertical direction.
  • the heating element 612 is a heater in which a resistance heating element such as a nichrome wire is incorporated.
  • the heating element 612 has an annular plate shape that extends in the horizontal direction, and is provided inside the heating main body 611. The distance between the heating element 612 and the upper surface of the heating main body 611 is substantially constant over the entire circumference.
  • the annular heating unit 61 may use a heat source other than the resistance heating element.
  • a gas passage 613 for a heating gas which will be described later, is formed inside the heating main body 611.
  • the gas flow path 613 is provided over the entire circumference of the heating main body 611 between the heating element 612 and the lower surface of the heating main body 611.
  • the gas flow path 613 is formed in a continuous manner so as to go around the heating main body 611 a plurality of times.
  • a plurality of inner jet nozzles 614 are provided at equal intervals in the circumferential direction.
  • a plurality of outer jet nozzles 615 are provided at equal intervals in the circumferential direction in the vicinity of the outer peripheral edge on the upper surface.
  • each inner jet port 614 is an opening of a hole extending upward from the innermost peripheral portion of the gas flow path 613, and is provided in an inner peripheral edge 619 described later.
  • Each outer spout 615 is an opening of a hole extending upward from the outermost peripheral portion of the gas flow path 613 and is provided in an outer peripheral edge 610 described later.
  • a gas introduction hole (not shown) extending downward from a predetermined position of the gas flow path 613 is formed.
  • the gas introduction hole opens at the lower surface of the annular heating unit 61.
  • a gas supply source 62 (see FIG. 1) is connected to the gas introduction hole via a valve.
  • the gas supply source 62 supplies an inert gas to the gas flow path 613.
  • a gas introduction hole is formed between the position connected to the inner jet outlet 614 and the position connected to the outer jet outlet 615.
  • part of the inert gas supplied from the gas supply source 62 flows toward the innermost peripheral portion of the gas flow path 613 and is ejected from the plurality of inner ejection ports 614.
  • the remainder of the inert gas flows toward the outermost periphery of the gas flow path 613 and is ejected from the plurality of outer ejection ports 615.
  • the heated inert gas (hereinafter referred to as “heating gas”) at the plurality of inner jet ports 614 and the plurality of outer jet ports 615. ”Is ejected upward.
  • the heating gas ejected into the space between the lower surface 92 of the substrate 9 and the annular heating unit 61 suppresses the gas existing around the annular heating unit 61 from entering the space, and the lower surface 92 of the substrate 9. Also heat.
  • the heating unit lifting mechanism moves the annular heating unit 61 up and down.
  • the heating unit lifting mechanism selectively arranges the annular heating unit 61 at the proximity position and the separation position.
  • the annular heating unit 61 arranged at the close position is shown by a solid line
  • the annular heating unit 61 arranged at the separated position is shown by a two-dot chain line.
  • the upper surface of the annular heating unit 61 is close to the lower surface 92 of the substrate 9 held by the spin chuck 21. Specifically, the upper surface of the annular heating unit 61 faces a region outside the center portion on the lower surface 92 of the substrate 9.
  • the distance between the upper surface of the annular heating unit 61 arranged at the close position and the lower surface 92 of the substrate 9 is, for example, 2 to 5 mm.
  • the outer peripheral edge of the annular heating unit 61 overlaps with the peripheral part of the substrate 9 in the vertical direction, and when the annular heating unit 61 is disposed in the proximity position, the outer periphery of the annular heating unit 61 is outside the upper surface.
  • the peripheral edge is close to the outer peripheral edge of the substrate 9.
  • the processing rate of the substrate 9 with the processing liquid can be improved by heating the substrate 9 from the lower surface 92 side by the annular heating unit 61 disposed at the close position.
  • the interval at the separation position is, for example, several times the interval at the proximity position.
  • the annular heating unit 61 is disposed at the separated position, thereby preventing the annular heating unit 61 from interfering with an external transport mechanism.
  • the annular heating unit 61 may be disposed at any position between the proximity position and the separation position.
  • the substrate processing apparatus 1 further includes an outer peripheral wall portion 71, an inner peripheral wall portion 72, and a gas ejection portion 73.
  • the outer peripheral wall portion 71 is a cylindrical member centered on the central axis J1 and has a constant thickness over the entire circumference.
  • the outer peripheral wall portion 71 is provided along the outer peripheral edge of the upper surface of the casing 23, and the lower end of the outer peripheral wall portion 71 is fixed to the upper surface.
  • the outer peripheral wall portion 71 protrudes upward from the upper surface of the casing 23.
  • the inner diameter of the outer peripheral wall portion 71 is smaller than the outer diameter of the substrate 9 held by the spin chuck 21, and the outer diameter of the outer peripheral wall portion 71 is larger than the outer diameter of the substrate 9.
  • the inner diameter of the outer peripheral wall portion 71 is slightly larger than the outer diameter of the annular heating portion 61.
  • the upper end of the outer peripheral wall portion 71 is located above the lower surface of the annular heating unit 61 disposed at the close position and is located below the upper surface of the annular heating unit 61.
  • the inner peripheral surface of the upper end portion of the outer peripheral wall portion 71 is opposed to the outer peripheral surface of the annular heating portion 61 in the radial direction through a minute gap.
  • the width of the gap is substantially constant over the entire circumference.
  • the outer peripheral edge of the upper surface of the annular heating unit 61 is close to the outer peripheral edge of the substrate 9.
  • the outer peripheral edge portion 610 of the annular heating portion 61 is the substrate 9. Proximate to the outer periphery. Further, the width of the gap between the outer peripheral edge 610 of the annular heating unit 61 and the upper end of the outer peripheral wall 71 is slight. Accordingly, the outer peripheral edge portion 610 and the outer peripheral wall portion 71 of the annular heating portion 61 constitute a peripheral wall portion 710 that surrounds the space below the substrate 9.
  • the peripheral wall portion 710 protects the lower surface 92 of the substrate 9 and is hereinafter referred to as a “protective peripheral wall portion 710”.
  • the protective peripheral wall 710 can be regarded as a cylindrical shape whose upper end is close to the outer peripheral edge of the substrate 9. The lower end of the protective peripheral wall portion 710 is in contact with the upper surface of the casing 23 and is located below the upper surface of the central protruding portion 231.
  • the upper opening of the protective peripheral wall 710 is approximately blocked by the substrate 9. Therefore, the gas existing near the upper surface 91 of the substrate 9 and around the protective peripheral wall portion 710 is prevented from entering the protective peripheral wall portion 710 from the upper side of the protective peripheral wall portion 710. Further, the lower opening of the protective peripheral wall portion 710 is closed by the upper surface of the casing 23. That is, the casing 23 is a closing portion that closes the lower opening of the protective peripheral wall portion 710. Thereby, the gas existing around the protective peripheral wall portion 710 is suppressed from entering the protective peripheral wall portion 710 from the lower side of the protective peripheral wall portion 710.
  • through holes for various pipes and cables may be provided as necessary.
  • the inner peripheral wall portion 72 is a cylindrical member centered on the central axis J1, and has a constant thickness over the entire circumference.
  • the inner peripheral wall portion 72 is provided along the outer peripheral edge of the upper surface of the central projecting portion 231 of the casing 23, and the lower end of the inner peripheral wall portion 72 is fixed to the upper surface.
  • the inner peripheral wall portion 72 protrudes upward from the upper surface of the central protruding portion 231.
  • the inner diameter of the inner peripheral wall portion 72 is larger than the outer diameter of the spin chuck 21.
  • the outer diameter of the inner peripheral wall portion 72 is slightly smaller than the inner diameter of the annular heating portion 61.
  • the upper end of the inner peripheral wall portion 72 is located above the lower surface of the annular heating unit 61 disposed at the close position, and is located below the upper surface of the annular heating unit 61.
  • the outer peripheral surface of the upper end portion of the inner peripheral wall portion 72 is opposed to the inner peripheral surface of the annular heating unit 61 in the radial direction through a minute gap.
  • the width of the gap is substantially constant over the entire circumference.
  • the space between the spin chuck 21 and the annular heating part 61 is filled to some extent by the inner peripheral wall part 72.
  • the upper end of the inner peripheral wall part 72 is as described above. Proximate to the inner peripheral edge 619 of the annular heating unit 61. Further, the lower opening of the inner peripheral wall portion 72 is closed by the upper surface of the central projecting portion 231 around the shaft portion 221. Therefore, the gas existing below the annular heating unit 61 enters or is entrained in a space surrounded by the inner peripheral surface of the annular heating unit 61 (hereinafter referred to as “inner circumferential side space”). It is suppressed by the inner peripheral wall portion 72. The upper side of the space on the inner peripheral side of the annular heating unit 61 is covered with the substrate 9. Thereby, the gas existing in the vicinity of the upper surface 91 of the substrate 9 is prevented from entering the inner peripheral side of the annular heating unit 61.
  • the gas ejection part 73 is an annular hollow member centered on the central axis J1.
  • the gas ejection part 73 is an annular pipe.
  • the diameter of the gas ejection part 73 is substantially the same as the diameter of the inner peripheral wall part 72, and the gas ejection part 73 is fixed to the upper end surface of the inner peripheral wall part 72.
  • the gas ejection part 73 has a plurality of ejection ports 731 that open outward in the radial direction.
  • the plurality of jet nozzles 731 are provided at equal intervals in the circumferential direction.
  • slits that open toward the radially outer side and extend in the circumferential direction may be provided instead of the plurality of ejection ports 731.
  • the gas supply source 62 is connected to the gas ejection part 73 through a valve.
  • the gas supply source 62 supplies an inert gas to the gas ejection unit 73.
  • the inert gas is ejected from the plurality of ejection ports 731 toward the radially outer side, and is filled in the space on the inner peripheral side of the annular heating unit 61.
  • the inert gas may be supplied from individual gas supply sources to the gas ejection unit 73 and the gas flow path 613 of the annular heating unit 61.
  • the gas supplied to the gas ejection part 73 may be heated.
  • FIG. 3 is a diagram showing a flow in which the substrate processing apparatus 1 processes the substrate 9.
  • the substrate 9 to be processed is transferred to the substrate processing apparatus 1 of FIG. 1 by an external transfer mechanism, and the lower surface 92 of the substrate 9 is held by suction adsorption by the spin chuck 21 (step S11).
  • a predetermined thin film for example, a thin film of silicon oxide or silicon nitride
  • the cup movable unit 31 is disposed at the lower position
  • the annular heating unit 61 is disposed at the separated position.
  • the nozzle head 41 and the blocking plate 51 are also arranged at the standby positions. Thereby, the cup movable part 31, the annular heating part 61, the nozzle head 41, and the blocking plate 51 are prevented from interfering with the transport mechanism.
  • the nozzle head 41 moves to the processing position, and the blocking plate 51 moves to the facing position.
  • the cup movable part 31 is arrange
  • annular heating part 61 is arrange
  • the cup movable part 31, the annular heating part 61, the nozzle head 41, and the blocking plate 51 are arranged at positions indicated by solid lines in FIG.
  • heating of the heating element 612 at a constant temperature and ejection of heated gas from the inner jet port 614 and the outer jet port 615 are always performed.
  • the heating of the substrate 9 is started by arranging the annular heating unit 61 at the close position.
  • the amount of heating gas ejected in the annular heating unit 61 is, for example, 20 to 100 L (liter) per minute.
  • the target heating temperature of the substrate 9 is 40 to 80 ° C., for example.
  • the ejection of the protective gas from the gas nozzle 52 provided on the blocking plate 51 and the ejection of the inert gas from the gas ejection part 73 are also started.
  • the amount of protective gas ejected from the gas nozzle 52 is, for example, 10 to 50 L per minute.
  • the amount of inert gas ejected from the gas ejection portion 73 is, for example, 60 to 200 L per minute.
  • step S12 the rotation of the spin chuck 21 is started (step S12).
  • the rotational speed of the spin chuck 21 is set to 800 to 2000 rpm, for example.
  • DHF dilute hydrofluoric acid
  • Step S13 the portion on the peripheral edge is removed (etched) by DHF. DHF is scattered outward from the outer peripheral edge of the rotating substrate 9 and is received by the inner peripheral surface of the cup movable portion 31.
  • the protective gas ejected to the central portion of the upper surface 91 of the substrate 9 by the upper surface gas supply unit 5 of FIG. 1 is directed to the peripheral portion over the entire circumference due to the influence of the centrifugal force accompanying the rotation of the substrate 9. , DHF is prevented or suppressed from entering a region (non-processed region) inside the peripheral portion.
  • illustration of the shielding plate 51 and the like of the upper surface gas supply unit 5 is omitted.
  • the etching rate of the thin film of the substrate 9 by DHF is increased, and the consumption of DHF can be reduced.
  • DHF is heated through the substrate 9
  • a relatively large amount of hydrogen fluoride gas is generated.
  • the hydrogen fluoride gas is guided to the inside of the cup portion 3 from the gap between the outer peripheral edge of the substrate 9 and the inner peripheral edge 314 of the upper inclined portion 313 by the exhaust operation in the cup portion 3.
  • the gas flow is schematically shown by a thick arrow labeled A1.
  • the presence of the protective peripheral wall part 710 whose upper end is close to the outer peripheral edge of the substrate 9 prevents hydrogen fluoride gas from entering the protective peripheral wall part 710 from the upper side of the protective peripheral wall part 710.
  • the lower opening of the protective peripheral wall portion 710 is blocked by the upper surface of the casing 23, so that hydrogen fluoride gas is prevented from entering the protective peripheral wall portion 710 from the lower side of the protective peripheral wall portion 710.
  • the gas around the protective peripheral wall portion 710 including the hydrogen fluoride gas is exhausted by the exhaust port 341 disposed outside the protective peripheral wall portion 710.
  • the gas existing in the vicinity of the lower surface 92 of the substrate 9, that is, in the space between the lower surface 92 and the upper surface of the annular heating unit 61 Head to the outer periphery. Since the inert gas from the gas ejection part 73 and the heated gas (heated inert gas) from the annular heating part 61 enter the space, the space does not have an excessively low pressure. Further, due to the presence of the inner peripheral wall portion 72 whose upper end is close to the inner peripheral edge portion 619 of the annular heating portion 61, a gas (a gas other than the inert gas) existing below the annular heating portion 61 is caused to flow into the annular heating portion 61.
  • the gas flow is controlled by the outer peripheral wall portion 71, the inner peripheral wall portion 72, and the gas ejection portion 73 below the substrate 9.
  • a rinsing liquid is supplied as a processing liquid from the nozzle portion 413 to the outer peripheral edge of the substrate 9.
  • the rinse liquid scatters outward from the outer peripheral edge of the substrate 9 and is received by the inner peripheral surface of the cup movable portion 31.
  • DHF adhering to the peripheral portion of the substrate 9 is removed.
  • the protective gas from the upper surface gas supply unit 5 prevents or suppresses the rinsing liquid from entering the region inside the peripheral portion on the upper surface 91 of the substrate 9. Further, the gas existing around the protective peripheral wall portion 710 is suppressed from entering the protective peripheral wall portion 710.
  • the supply of the rinse liquid is stopped for a predetermined time and then stopped.
  • the drying process of the substrate 9 is started by increasing the rotation speed of the spin chuck 21 as compared with the time of supplying the processing liquid (step S14).
  • the rotation of the spin chuck 21 is stopped (step S15).
  • the ejection of the protective gas from the upper surface gas supply unit 5 and the ejection of the inert gas from the gas ejection unit 73 are stopped.
  • the cup movable unit 31 is disposed at the lower position, and the annular heating unit 61 is disposed at the separated position.
  • the nozzle head 41 and the blocking plate 51 are moved to the standby position. Then, the holding of the substrate 9 by the spin chuck 21 is released, and the processed substrate 9 is unloaded by an external transport mechanism (step S16). Thereby, the processing of the substrate 9 by the substrate processing apparatus 1 is completed.
  • the DHF and the rinsing liquid are supplied to the outer peripheral edge of the substrate 9. For example, before supplying the DHF and the rinsing liquid, the SC-1 to SC-1 are applied to the outer peripheral edge of the substrate 9. May be supplied.
  • FIG. 4 is a view showing a substrate processing apparatus 8 of a comparative example.
  • the gas flow is schematically shown by a thick arrow labeled A2.
  • the outer peripheral wall part 71, the inner peripheral wall part 72, and the gas ejection part 73 in the substrate processing apparatus 1 of FIG. 1 are omitted.
  • the gas existing in the space between the lower surface 92 of the substrate 9 and the upper surface of the annular heating unit 61 moves toward the outer peripheral edge of the substrate 9.
  • ambient gas is caught in the space on the inner peripheral side of the annular heating unit 61.
  • the thin film portion in the region outside the central portion (spin chuck 21) on the lower surface 92 of the substrate 9 is etched with hydrogen fluoride gas.
  • a treatment liquid other than DHF for example, SC-1, SC-2, or hydrofluoric acid
  • the gas generated from the treatment liquid has reactivity with the thin film formed on the lower surface 92, the thin film Etching or alteration occurs.
  • the processing liquid component is transferred to the other substrate facing the substrate 9. There is also a possibility that the thin film on the substrate is altered by the treatment liquid component.
  • FIG. 5 is a diagram showing the measurement results of the etching amount on the lower surface 92 of the substrate 9.
  • the vertical axis in FIG. 5 indicates the etching amount
  • the horizontal axis indicates the radial position of the lower surface 92.
  • the central portion that contacts the spin chuck 21 on the lower surface 92 is indicated by an arrow denoted by reference numeral H1.
  • the etching amount increases in a region outside the central portion of the lower surface 92, as indicated by the point denoted by D ⁇ b> 2 in FIG. 5.
  • the etching amount is the largest in the vicinity of the central portion in the outer region.
  • the gas of the processing liquid enters the space on the inner peripheral side of the annular heating unit 61, passes through the space between the lower surface 92 and the upper surface of the annular heating unit 61, and moves toward the outer peripheral edge of the substrate 9.
  • the etching amount is large near the outer peripheral edge of the substrate 9, and the gas of the processing liquid enters the space between the lower surface 92 and the upper surface of the annular heating unit 61 from the outer peripheral edge side of the substrate 9. Guessed.
  • the central portion in contact with the spin chuck 21 is hardly etched. Even when the annular heating unit 61 is omitted in the substrate processing apparatus 8 of the comparative example, it has been confirmed that the etching amount increases in a region outside the central portion of the lower surface 92.
  • the etching amount in the region outside the central part of the lower surface 92 is significantly smaller than that of the substrate processing apparatus 8 of the comparative example. It has been confirmed that
  • the central portion of the lower surface 92 of the substrate 9 in the horizontal state is sucked and held by the spin chuck 21.
  • a cylindrical protective peripheral wall 710 that surrounds the periphery of the spin chuck 21 and whose upper end is close to the outer peripheral edge of the substrate 9 is provided. Accordingly, it is possible to suppress the gas generated from the processing liquid from flowing into the vicinity of the lower surface 92, that is, to protect the lower surface 92 of the substrate 9 from the gas. As a result, the gas can suppress adverse effects such as etching and alteration on the thin film on the lower surface 92 of the substrate 9. When the board
  • an annular heating unit 61 that heats the lower surface 92 of the substrate 9 is provided, and the outer peripheral edge 610 of the annular heating unit 61 also serves as a part including the upper end of the protective peripheral wall 710. Thereby, it becomes possible to suppress the gas of the processing liquid from flowing into the vicinity of the lower surface 92 while heating the substrate 9 to improve the processing rate by the processing liquid.
  • the substrate processing apparatus 1 is further provided with an inner peripheral wall portion 72 that has a cylindrical shape surrounding the spin chuck 21 and whose upper end is close to the inner peripheral edge portion 619 of the annular heating portion 61. Thereby, it is possible to suppress the gas of the processing liquid from entering the inner peripheral side of the annular heating unit 61 and passing through the space between the lower surface 92 of the substrate 9 and the upper surface of the annular heating unit 61. Further, the inner peripheral wall portion 72 is disposed between the spin chuck 21 and the annular heating portion 61, and a gas ejection portion 73 that ejects an inert gas is provided at the upper end of the inner peripheral wall portion 72.
  • the pressure of the space is increased by the inert gas to further suppress the gas of the processing liquid from entering the inner peripheral side of the annular heating unit 61. be able to.
  • the ejection amount of the heating gas in the annular heating unit 61 is set to an optimum value that reduces the temperature variation of the annular heating unit 61.
  • FIG. 6 is a diagram illustrating another example of the substrate processing apparatus 1.
  • the annular heating part 61 and the inner peripheral wall part 72 are omitted as compared with the substrate processing apparatus 1 of FIG.
  • the upper end of the outer peripheral wall portion 71 a is close to the outer peripheral edge of the substrate 9, and the gas ejection portion 73 is attached to the upper surface of the central projecting portion 231.
  • Other configurations are the same as those of the substrate processing apparatus 1 of FIG. 1, and the same reference numerals are given to the same configurations.
  • the upper end surface of the outer peripheral wall portion 71a directly faces the outer peripheral edge of the substrate 9 in the vertical direction.
  • the outer peripheral wall portion 71a alone becomes a protective peripheral wall portion, and suppresses the gas generated from the processing liquid from entering the vicinity of the lower surface 92.
  • the gas can be prevented from adversely affecting the lower surface 92 of the substrate 9 (and other substrates in the hoop).
  • the gas ejection part 73 which ejects an inert gas is provided in the space enclosed by the outer peripheral wall part 71a. Thereby, the pressure of the space can be increased, and the gas of the processing liquid can be further suppressed from flowing around the lower surface 92.
  • FIG. 7 is a view showing still another example of the substrate processing apparatus 1.
  • the annular heating part 61, the inner peripheral wall part 72, and the gas ejection part 73 of FIG. 1 are omitted, and a cylindrical outer peripheral wall part 71b having a large thickness is used.
  • the upper end of the outer peripheral wall portion 71 b is close to the outer peripheral edge of the substrate 9.
  • the outer peripheral wall portion 71b becomes a protective peripheral wall portion as a single unit, and suppresses the gas generated from the processing liquid from entering the vicinity of the lower surface 92.
  • the upper end of the outer peripheral wall portion 71 b is also close to the outer peripheral edge of the spin chuck 21.
  • the lower space with respect to the outer region from the center portion of the lower surface 92 of the substrate 9 can be filled with the outer peripheral wall portion 71 b, and a large amount of gas of the processing liquid is filled in the lower space. Can be more reliably prevented from entering.
  • the substrate processing apparatus 1 can be variously modified.
  • the lower opening of the protective peripheral wall portion 710 does not necessarily need to be closed, and the gas generated from the processing liquid approaches the lower surface 92. If the wraparound can be suppressed, the lower opening may be partially or entirely opened.
  • the lower end of the protective peripheral wall portion (outer peripheral wall portions 71, 71 a, 71 b) is disposed below the exhaust port 341. In the processing apparatus 1, even when the lower opening is not closed, it is possible to suppress the wraparound of the processing liquid gas to the vicinity of the lower surface 92 to some extent.
  • the exhaust port 341 may be provided in the cup fixing portion 32.
  • the inner peripheral wall portion is necessary.
  • 72 and the gas ejection part 73 may only be provided. That is, in the substrate processing apparatus 1 in FIG. 1, the inner peripheral wall portion 72 and the gas ejection part 73 may be omitted, and in the substrate processing apparatus 1 in FIG. 6, the gas ejection part 73 may be omitted.
  • a concave portion extending in the vertical direction may be formed in a part of the outer peripheral surface of the annular heating unit 61. Even in this case, in the substrate processing apparatus 1 having the outer peripheral wall portion 71, the gas generated from the processing liquid is less likely to enter the vicinity of the lower surface 92 than the substrate processing apparatus 8 of the comparative example. 9 can be adversely affected.
  • the processing liquid supply unit 4 may supply the processing liquid to the outer peripheral edge of the substrate 9 from the outer side or the lower side in the radial direction. Further, the processing liquid supply unit 4 may supply the processing liquid to the central portion of the upper surface 91 of the substrate 9 or the like.
  • the upper surface gas supply unit 5 that protects the region inside the peripheral portion on the upper surface 91 of the substrate 9 from the processing liquid may be provided as necessary.
  • the substrate holding portion that holds the lower surface 92 of the substrate 9 by suction may be an electrostatic chuck or the like in addition to the spin chuck 21 that is a vacuum chuck.
  • the substrate to be processed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.

Abstract

A substrate treating device (1) is provided with: a spin chuck (21) that sucks and holds the center of the bottom surface (92) of a substrate (9) set in a horizontal state; a spin motor that rotates the spin chuck (21) about a vertical center axis (J1); a treatment solution supply unit (4) that supplies a treatment solution to the top surface (91) or the outer circumferential edge of the substrate (9); and a protection circumferential wall (710) which surrounds the spin chuck (21), has, at the upper end, a cylindrical shape located close to the outer circumferential edge of the substrate (9), and suppresses sneaking of a gas generated from the treatment solution to the vicinity of the bottom surface (92). In the substrate treating device (1), gas generated from the treatment solution can be suppressed from adversely affecting the bottom surface (92) of the substrate (9).

Description

基板処理装置Substrate processing equipment
　本発明は、基板処理装置に関する。 The present invention relates to a substrate processing apparatus.
　従来、半導体基板（以下、単に「基板」という。）の製造工程では、基板の表面に対して各種処理が行われる。例えば、特開２０１７－１１０１５号公報（文献１）では、基板の上面周縁部における処理領域に薬液を供給して、当該処理領域に対してエッチング等の処理を行う基板処理装置が開示されている。当該基板処理装置では、スピンチャックにより基板が下方から吸着保持され、スピンチャックの周りには、基板の周縁部を下面側から加熱するヒーターが設けられる。基板の加熱により、薬液による基板の処理レートを向上することが可能となる。 Conventionally, in the manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the surface of the substrate. For example, Japanese Patent Laying-Open No. 2017-11015 (Reference 1) discloses a substrate processing apparatus that supplies a chemical solution to a processing region at the peripheral edge of the upper surface of a substrate and performs processing such as etching on the processing region. . In the substrate processing apparatus, the substrate is attracted and held from below by the spin chuck, and a heater for heating the peripheral edge of the substrate from the lower surface side is provided around the spin chuck. By heating the substrate, the processing rate of the substrate with the chemical solution can be improved.
　ところで、文献１の基板処理装置では、基板の回転による気流により、薬液の雰囲気が基板の下面近傍へと回り込み、基板の下面に形成された薄膜が薬液雰囲気によりエッチングされたり、変質する（汚染される）場合がある。また、薬液成分が基板の下面に付着した状態で、当該基板がフープ等に収容された場合に、当該基板に対向する他の基板に当該薬液成分が転写され、当該他の基板上の薄膜が変質する可能性もある。 By the way, in the substrate processing apparatus of Document 1, the atmosphere of the chemical solution flows near the lower surface of the substrate due to the airflow caused by the rotation of the substrate, and the thin film formed on the lower surface of the substrate is etched or altered (contaminated) by the chemical solution atmosphere. There is a case. Further, when the chemical liquid component is attached to the lower surface of the substrate and the substrate is accommodated in a hoop or the like, the chemical liquid component is transferred to another substrate facing the substrate, and the thin film on the other substrate is There is also the possibility of alteration.
　本発明は、基板処理装置に向けられており、処理液から発生するガスが、基板に悪影響を及ぼすことを抑制することを目的としている。 The present invention is directed to a substrate processing apparatus, and is intended to suppress a gas generated from a processing liquid from adversely affecting a substrate.
　本発明に係る基板処理装置は、水平状態の基板の下面の中央部を吸着保持する基板保持部と、上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、前記基板の上面または外周縁に対して処理液を供給する処理液供給部と、前記基板保持部の周囲を囲むとともに、上端が前記基板の前記外周縁に近接する円筒状であり、前記処理液から発生するガスの前記下面近傍への回り込みを抑制する防護周壁部とを備える。 The substrate processing apparatus according to the present invention includes a substrate holding unit that sucks and holds a central portion of a lower surface of a horizontal substrate, a substrate rotation mechanism that rotates the substrate holding unit about a central axis that faces in the vertical direction, and the substrate. A processing liquid supply section for supplying a processing liquid to the upper surface or outer peripheral edge of the substrate, and a cylindrical shape surrounding the periphery of the substrate holding section and having an upper end close to the outer peripheral edge of the substrate, and is generated from the processing liquid And a protective peripheral wall portion that suppresses wraparound of the gas to be performed in the vicinity of the lower surface.
　本発明によれば、処理液から発生するガスが基板の下面近傍に回り込むことを抑制することにより、当該ガスが基板に悪影響を及ぼすことを抑制することができる。 According to the present invention, it is possible to prevent the gas generated from the processing liquid from flowing around the lower surface of the substrate, thereby preventing the gas from adversely affecting the substrate.
　本発明の一の好ましい形態では、基板処理装置が、前記防護周壁部の下側開口を閉塞する閉塞部をさらに備える。 In one preferred embodiment of the present invention, the substrate processing apparatus further includes a closing portion that closes the lower opening of the protective peripheral wall portion.
　本発明の他の好ましい形態では、基板処理装置が、前記基板保持部の周囲において前記基板の前記下面に近接し、前記下面を加熱する環状加熱部をさらに備え、前記環状加熱部の外周縁部が、前記防護周壁部の前記上端を含む部位を兼ねる。 In another preferred embodiment of the present invention, the substrate processing apparatus further includes an annular heating unit that heats the lower surface in proximity to the lower surface of the substrate around the substrate holding unit, and an outer peripheral edge portion of the annular heating unit However, it also serves as a portion including the upper end of the protective peripheral wall.
　この場合に、基板処理装置が、前記基板保持部の周囲を囲む円筒状であり、上端が前記環状加熱部の内周縁部に近接する内側周壁部をさらに備えることが好ましい。 In this case, it is preferable that the substrate processing apparatus has a cylindrical shape surrounding the periphery of the substrate holding portion, and further includes an inner peripheral wall portion whose upper end is close to the inner peripheral edge portion of the annular heating portion.
　より好ましくは、基板処理装置が、前記基板保持部と前記環状加熱部との間に配置される前記内側周壁部の上端に設けられ、不活性ガスを噴出するガス噴出部をさらに備える。 More preferably, the substrate processing apparatus further includes a gas ejection unit that is provided at an upper end of the inner peripheral wall portion disposed between the substrate holding unit and the annular heating unit and ejects an inert gas.
　本発明の他の好ましい形態では、基板処理装置が、前記防護周壁部に囲まれる空間の内部に、不活性ガスを噴出するガス噴出部をさらに備える。 In another preferred embodiment of the present invention, the substrate processing apparatus further includes a gas ejection portion that ejects an inert gas inside a space surrounded by the protective peripheral wall portion.
　本発明の他の好ましい形態では、基板処理装置が、前記防護周壁部の外側に配置され、前記防護周壁部の周囲のガスを排気する排気口をさらに備え、前記処理液を前記基板に供給する際に、前記防護周壁部の下端が、前記排気口よりも下方に配置される。 In another preferred embodiment of the present invention, the substrate processing apparatus further includes an exhaust port that is disposed outside the protective peripheral wall portion and exhausts gas around the protective peripheral wall portion, and supplies the processing liquid to the substrate. In this case, the lower end of the protective peripheral wall is disposed below the exhaust port.
　上述の目的および他の目的、特徴、態様および利点は、添付した図面を参照して以下に行うこの発明の詳細な説明により明らかにされる。 The above object and other objects, features, aspects, and advantages will become apparent from the following detailed description of the present invention with reference to the accompanying drawings.
基板処理装置の構成を示す図である。It is a figure which shows the structure of a substrate processing apparatus. 基板処理装置の一部を拡大して示す図である。It is a figure which expands and shows a part of substrate processing apparatus. 基板処理装置が基板を処理する流れを示す図である。It is a figure which shows the flow which a substrate processing apparatus processes a board | substrate. 比較例の基板処理装置を示す図である。It is a figure which shows the substrate processing apparatus of a comparative example. 基板の下面におけるエッチング量の測定結果を示す図である。It is a figure which shows the measurement result of the etching amount in the lower surface of a board | substrate. 基板処理装置の他の例を示す図である。It is a figure which shows the other example of a substrate processing apparatus. 基板処理装置のさらに他の例を示す図である。It is a figure which shows the further another example of a substrate processing apparatus.
　図１は、本発明の一の実施の形態に係る基板処理装置１の構成を示す図である。図１では、基板処理装置１における一部の構成を、後述の中心軸Ｊ１を含む面における断面にて示している（他の図において同様）。基板処理装置１は、基板９に処理液を供給して基板９を処理する装置である。基板処理装置１は、スピンチャック２１と、スピンモータ２２と、ケーシング２３と、カップ部３と、処理液供給部４と、上面ガス供給部５と、加熱ユニット６と、図示省略の制御部とを備える。制御部は、基板処理装置１の全体制御を担う。 FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. In FIG. 1, a part of the configuration of the substrate processing apparatus 1 is shown in a cross section on a plane including a later-described central axis J1 (the same applies to other drawings). The substrate processing apparatus 1 is an apparatus for processing a substrate 9 by supplying a processing liquid to the substrate 9. The substrate processing apparatus 1 includes a spin chuck 21, a spin motor 22, a casing 23, a cup unit 3, a processing liquid supply unit 4, an upper surface gas supply unit 5, a heating unit 6, and a control unit (not shown). Is provided. The controller is responsible for overall control of the substrate processing apparatus 1.
　スピンチャック２１は、円板状の部材である。スピンチャック２１の外径は、円板状の基板９の外径よりも小さい。スピンチャック２１の上面は、水平方向に広がる。基板９は、その中心がスピンチャック２１の中心軸上に位置するように、スピンチャック２１の上面に載置される。スピンチャック２１は、基板９の下方を向く主面９２（以下、「下面９２」という。）の中央部に対向する。基板９の下面９２において中央部よりも外側の領域は、スピンチャック２１と対向しない。スピンチャック２１の上面には、図示省略の複数の吸引穴が設けられる。基板９の下面９２の中央部は、複数の吸引穴により吸着保持される。このようにして、基板保持部であるスピンチャック２１により、基板９が水平状態で（すなわち、水平な姿勢で）保持される。 The spin chuck 21 is a disk-shaped member. The outer diameter of the spin chuck 21 is smaller than the outer diameter of the disk-shaped substrate 9. The upper surface of the spin chuck 21 extends in the horizontal direction. The substrate 9 is placed on the upper surface of the spin chuck 21 so that the center thereof is located on the central axis of the spin chuck 21. The spin chuck 21 faces a central portion of a main surface 92 (hereinafter referred to as “lower surface 92”) that faces the lower side of the substrate 9. A region outside the center portion on the lower surface 92 of the substrate 9 does not face the spin chuck 21. A plurality of suction holes (not shown) are provided on the upper surface of the spin chuck 21. The central portion of the lower surface 92 of the substrate 9 is sucked and held by a plurality of suction holes. In this manner, the substrate 9 is held in a horizontal state (that is, in a horizontal posture) by the spin chuck 21 serving as the substrate holding unit.
　スピンチャック２１の下面には、軸部２２１の上端が接続される。軸部２２１は、上下方向（鉛直方向）を向く中心軸Ｊ１を有する。軸部２２１の中心軸Ｊ１は、スピンチャック２１の中心軸と一致する。基板回転機構であるスピンモータ２２は、軸部２２１を回転することにより、スピンチャック２１および基板９を、中心軸Ｊ１を中心として回転する。ケーシング２３は、有蓋の円筒状であり、軸部２２１の下部、および、スピンモータ２２を内部に収容する。ケーシング２３の上面には、有蓋の円筒状である中央突出部２３１が設けられる。軸部２２１は、中央突出部２３１の上面から上方に突出する。図１の例では、中央突出部２３１の外径は、スピンチャック２１の外径よりも大きい。中央突出部２３１の上面、および、ケーシング２３の上面は水平方向に広がる。 The upper end of the shaft portion 221 is connected to the lower surface of the spin chuck 21. The shaft portion 221 has a central axis J1 that faces the vertical direction (vertical direction). The central axis J1 of the shaft portion 221 coincides with the central axis of the spin chuck 21. The spin motor 22 which is a substrate rotation mechanism rotates the spin chuck 21 and the substrate 9 about the central axis J1 by rotating the shaft portion 221. The casing 23 has a cylindrical shape with a lid, and houses the lower portion of the shaft portion 221 and the spin motor 22 therein. On the upper surface of the casing 23, a central projecting portion 231 having a covered cylindrical shape is provided. The shaft portion 221 protrudes upward from the upper surface of the central protrusion 231. In the example of FIG. 1, the outer diameter of the central protrusion 231 is larger than the outer diameter of the spin chuck 21. The upper surface of the central protrusion 231 and the upper surface of the casing 23 spread in the horizontal direction.
　カップ部３は、カップ可動部３１と、カップ固定部３２と、カップ昇降部（図示省略）と、排気部３４とを備える。カップ可動部３１は、スピンチャック２１の周囲を囲む略筒状である。カップ可動部３１は、内側円筒部３１１と、外側円筒部３１２と、上側傾斜部３１３とを備える。内側円筒部３１１および外側円筒部３１２は、共に中心軸Ｊ１を中心とする円筒状の部位である。外側円筒部３１２の内径は、内側円筒部３１１の外径よりも大きく、外側円筒部３１２は、内側円筒部３１１の外周面との間に隙間を空けて、内側円筒部３１１の周囲を囲む。内側円筒部３１１の上端部、および、外側円筒部３１２の上端部は互いに接続する。上側傾斜部３１３は、内側円筒部３１１と外側円筒部３１２との接続部から中心軸Ｊ１に向かって広がる円環板状の部位である。正確には、上側傾斜部３１３は、中心軸Ｊ１に近づくに従って上側に位置するように僅かに傾斜する。上側傾斜部３１３の内周縁３１４は、およそ全周に亘って下方に向かって突出する。中心軸Ｊ１を中心とする径方向において、内周縁３１４は、スピンチャック２１に保持される基板９の外周縁よりも外側に位置する。 The cup part 3 includes a cup movable part 31, a cup fixing part 32, a cup elevating part (not shown), and an exhaust part 34. The cup movable part 31 has a substantially cylindrical shape surrounding the periphery of the spin chuck 21. The cup movable part 31 includes an inner cylindrical part 311, an outer cylindrical part 312, and an upper inclined part 313. The inner cylindrical portion 311 and the outer cylindrical portion 312 are both cylindrical portions with the central axis J1 as the center. The inner diameter of the outer cylindrical portion 312 is larger than the outer diameter of the inner cylindrical portion 311, and the outer cylindrical portion 312 surrounds the inner cylindrical portion 311 with a gap between the outer peripheral surface of the inner cylindrical portion 311. The upper end portion of the inner cylindrical portion 311 and the upper end portion of the outer cylindrical portion 312 are connected to each other. The upper inclined portion 313 is an annular plate-shaped portion that extends from the connection portion between the inner cylindrical portion 311 and the outer cylindrical portion 312 toward the central axis J1. Precisely, the upper inclined portion 313 is slightly inclined so as to be positioned on the upper side as it approaches the central axis J1. The inner peripheral edge 314 of the upper inclined portion 313 protrudes downward over the entire circumference. The inner peripheral edge 314 is positioned outside the outer peripheral edge of the substrate 9 held by the spin chuck 21 in the radial direction centered on the central axis J1.
　カップ固定部３２は、ケーシング２３の周囲を囲む略筒状である。カップ固定部３２は、固定円筒部３２１と、環状底部３２２とを備える。固定円筒部３２１は、中心軸Ｊ１を中心とする円筒状の部位である。固定円筒部３２１の内径は、内側円筒部３１１の外径よりも大きく、固定円筒部３２１の外径は、外側円筒部３１２の内径よりも小さい。固定円筒部３２１の上部は、内側円筒部３１１と外側円筒部３１２との間の隙間に配置される。環状底部３２２は、固定円筒部３２１の下端部から中心軸Ｊ１に向かって広がる円環板状の部位である。環状底部３２２の内周縁は、全周に亘ってケーシング２３の外周面に接続する。環状底部３２２には、排出管（図示省略）が設けられる。排出管は、気液排出部に接続され、環状底部３２２近傍におけるガスおよび液体が外部に排出される。 The cup fixing part 32 has a substantially cylindrical shape surrounding the casing 23. The cup fixing part 32 includes a fixed cylindrical part 321 and an annular bottom part 322. The fixed cylindrical part 321 is a cylindrical part centering on the central axis J1. The inner diameter of the fixed cylindrical portion 321 is larger than the outer diameter of the inner cylindrical portion 311, and the outer diameter of the fixed cylindrical portion 321 is smaller than the inner diameter of the outer cylindrical portion 312. The upper portion of the fixed cylindrical portion 321 is disposed in a gap between the inner cylindrical portion 311 and the outer cylindrical portion 312. The annular bottom portion 322 is an annular plate-shaped portion that extends from the lower end portion of the fixed cylindrical portion 321 toward the central axis J1. The inner peripheral edge of the annular bottom portion 322 is connected to the outer peripheral surface of the casing 23 over the entire periphery. The annular bottom 322 is provided with a discharge pipe (not shown). The discharge pipe is connected to the gas-liquid discharge portion, and the gas and liquid in the vicinity of the annular bottom portion 322 are discharged to the outside.
　カップ昇降部は、カップ可動部３１を上下方向に昇降して、カップ可動部３１を上位置と下位置とに選択的に配置する。図１では、上位置に配置されたカップ可動部３１を実線で示し、下位置に配置されたカップ可動部３１を二点鎖線で示している。後述の処理液による処理では、カップ可動部３１を上位置に配置することにより、基板９から飛散する処理液がカップ可動部３１の内周面により受けられる。また、基板処理装置１への基板９の搬入搬出時に、カップ可動部３１が下位置に配置されることにより、カップ可動部３１が外部の搬送機構と干渉することが防止される。カップ部３では、カップ可動部３１が上位置と下位置との間の任意の位置に配置可能であってよい。 The cup elevating part raises and lowers the cup movable part 31 in the vertical direction, and selectively places the cup movable part 31 in the upper position and the lower position. In FIG. 1, the cup movable part 31 arranged at the upper position is indicated by a solid line, and the cup movable part 31 arranged at the lower position is indicated by a two-dot chain line. In the processing using the processing liquid described later, the processing liquid splashed from the substrate 9 is received by the inner peripheral surface of the cup movable section 31 by disposing the cup movable section 31 in the upper position. Further, when the substrate 9 is carried into and out of the substrate processing apparatus 1, the cup movable portion 31 is disposed at the lower position, thereby preventing the cup movable portion 31 from interfering with an external transport mechanism. In the cup part 3, the cup movable part 31 may be arrange | positioned in the arbitrary positions between an upper position and a lower position.
　排気部３４は、例えばカップ可動部３１に接続される。排気部３４は、固定円筒部３２１と外側円筒部３１２との間の隙間、および、固定円筒部３２１と内側円筒部３１１との間の隙間を減圧することにより、カップ部３の内部（すなわち、カップ部３により周囲が囲まれる空間内）のガスを排気する。換言すると、内側円筒部３１１の下端と固定円筒部３２１との間に、環状の排気口３４１が設けられる。 The exhaust part 34 is connected to the cup movable part 31, for example. The exhaust part 34 reduces the gap between the fixed cylindrical part 321 and the outer cylindrical part 312 and the gap between the fixed cylindrical part 321 and the inner cylindrical part 311, thereby reducing the inside of the cup part 3 (that is, The gas in the space surrounded by the cup portion 3 is exhausted. In other words, the annular exhaust port 341 is provided between the lower end of the inner cylindrical portion 311 and the fixed cylindrical portion 321.
　処理液供給部４は、ノズルヘッド４１と、ヘッド移動機構４２と、複数の処理液供給源４３１～４３３とを備える。ノズルヘッド４１は、複数のノズル部４１１～４１３を備える。複数のノズル部４１１～４１３には、弁を介して複数の処理液供給源４３１～４３３がそれぞれ接続される。図１の例では、複数のノズル部４１１～４１３（および複数の処理液供給源４３１～４３３）の個数は３であるが、１、２、または、４以上であってもよい。 The processing liquid supply unit 4 includes a nozzle head 41, a head moving mechanism 42, and a plurality of processing liquid supply sources 431 to 433. The nozzle head 41 includes a plurality of nozzle portions 411 to 413. A plurality of treatment liquid supply sources 431 to 433 are connected to the plurality of nozzle portions 411 to 413 through valves, respectively. In the example of FIG. 1, the number of the plurality of nozzle portions 411 to 413 (and the plurality of processing liquid supply sources 431 to 433) is 3, but may be 1, 2, or 4 or more.
　処理液供給源４３１は、ＳＣ－１（アンモニアと過酸化水素水の混合液）を処理液としてノズル部４１１に供給する。処理液供給源４３２は、ＤＨＦ（希フッ酸）を処理液としてノズル部４１２に供給する。処理液供給源４３３は、リンス液を処理液としてノズル部４１３に供給する。リンス液は、例えば純水である。ＳＣ－２（塩酸と過酸化水素水の混合液）や、フッ硝酸等の他の種類の処理液が、ノズル部４１１～４１３に供給されてもよい。各ノズル部４１１～４１３では、処理液が下方に向かって吐出される。ノズル部４１１～４１３から吐出される処理液は、例えば液柱状であり、液滴状であってもよい。 The processing liquid supply source 431 supplies SC-1 (mixed liquid of ammonia and hydrogen peroxide solution) to the nozzle unit 411 as a processing liquid. The processing liquid supply source 432 supplies DHF (dilute hydrofluoric acid) to the nozzle unit 412 as a processing liquid. The processing liquid supply source 433 supplies the rinsing liquid as a processing liquid to the nozzle unit 413. The rinse liquid is, for example, pure water. Other types of processing liquid such as SC-2 (mixed liquid of hydrochloric acid and hydrogen peroxide solution) and hydrofluoric acid may be supplied to the nozzle portions 411 to 413. In each of the nozzle portions 411 to 413, the processing liquid is discharged downward. The processing liquid discharged from the nozzle portions 411 to 413 is, for example, a liquid column shape, and may be a droplet shape.
　ヘッド移動機構４２は、上下方向を向く中心軸を中心としてアーム４２１を回動する。アーム４２１の先端には、ノズルヘッド４１が取り付けられており、ヘッド移動機構４２によりノズルヘッド４１が、水平方向に移動する。本実施の形態では、ヘッド移動機構４２は、ノズルヘッド４１を処理位置と待機位置とに選択的に配置する。 The head moving mechanism 42 rotates the arm 421 about the central axis that faces in the vertical direction. A nozzle head 41 is attached to the tip of the arm 421, and the nozzle head 41 is moved in the horizontal direction by the head moving mechanism 42. In the present embodiment, the head moving mechanism 42 selectively arranges the nozzle head 41 at the processing position and the standby position.
　処理位置では、スピンチャック２１に保持される基板９の上方を向く主面９１（以下、「上面９１」という。）にノズルヘッド４１が対向する。詳細には、処理位置に配置されたノズルヘッド４１の複数のノズル部４１１～４１３は、周方向に沿って並んだ状態で、上面９１の周縁部に対向する。上面９１の周縁部は、基板９の外周縁近傍の環状領域である。基板９の半径が１５０ｍｍである場合、周縁部は、外周縁から幅が数ｍｍの範囲の領域である。後述するように、複数のノズル部４１１～４１３は、順に上面９１の周縁部（正確には、ほぼ外周縁）に対して処理液を供給するため、複数のノズル部４１１～４１３により処理液が供給される径方向の位置が同じとなるように、ヘッド移動機構４２によりノズルヘッド４１の位置が微調整されてもよい。待機位置では、例えばノズルヘッド４１が、径方向におけるカップ部３の外側に配置される。 In the processing position, the nozzle head 41 faces a main surface 91 (hereinafter referred to as “upper surface 91”) facing the upper side of the substrate 9 held by the spin chuck 21. Specifically, the plurality of nozzle portions 411 to 413 of the nozzle head 41 arranged at the processing position are opposed to the peripheral edge portion of the upper surface 91 in a state of being aligned along the circumferential direction. The peripheral portion of the upper surface 91 is an annular region near the outer peripheral edge of the substrate 9. When the radius of the substrate 9 is 150 mm, the peripheral edge is an area having a width of several mm from the outer peripheral edge. As will be described later, since the plurality of nozzle portions 411 to 413 sequentially supply the processing liquid to the peripheral edge portion (more precisely, the outer peripheral edge) of the upper surface 91, the plurality of nozzle portions 411 to 413 supply the processing liquid. The position of the nozzle head 41 may be finely adjusted by the head moving mechanism 42 so that the supplied radial position is the same. In the standby position, for example, the nozzle head 41 is disposed outside the cup portion 3 in the radial direction.
　上面ガス供給部５は、遮断板５１と、ガスノズル５２と、保持部材５３と、ガス供給源５４と、遮断板移動機構（図示省略）とを備える。遮断板５１は、円板状の部材である。遮断板５１の下面は、水平方向に広がる。保持部材５３は、遮断板５１と同心の円柱状の部材であり、遮断板５１の上面に取り付けられる。保持部材５３および遮断板５１には、その中心軸の位置に貫通孔が設けられる。ガスノズル５２は、当該貫通孔に挿入されて固定される。ガスノズル５２の噴出口は、遮断板５１の下面において開口する。 The upper surface gas supply unit 5 includes a blocking plate 51, a gas nozzle 52, a holding member 53, a gas supply source 54, and a blocking plate moving mechanism (not shown). The blocking plate 51 is a disk-shaped member. The lower surface of the blocking plate 51 extends in the horizontal direction. The holding member 53 is a columnar member concentric with the blocking plate 51 and is attached to the upper surface of the blocking plate 51. The holding member 53 and the blocking plate 51 are provided with a through hole at the center axis position. The gas nozzle 52 is inserted into the through hole and fixed. The outlet of the gas nozzle 52 opens on the lower surface of the blocking plate 51.
　ガスノズル５２には、弁を介してガス供給源５４が接続される。ガス供給源５４は、不活性ガスを保護ガスとしてガスノズル５２に供給する。不活性ガスは、基板９の材質、および、その表面に形成された薄膜との反応性に乏しいガスであり、例えば、窒素ガス、アルゴンガス、ヘリウムガス等である。他の種類の保護ガスが、ガスノズル５２に供給されてもよい。ガスノズル５２では、保護ガスが下方に向かって噴出される。 A gas supply source 54 is connected to the gas nozzle 52 via a valve. The gas supply source 54 supplies an inert gas to the gas nozzle 52 as a protective gas. The inert gas is a gas having poor reactivity with the material of the substrate 9 and the thin film formed on the surface thereof, and is, for example, nitrogen gas, argon gas, helium gas or the like. Other types of protective gas may be supplied to the gas nozzle 52. In the gas nozzle 52, the protective gas is ejected downward.
　遮断板移動機構は、例えばヘッド移動機構４２と同様の構造を有し、遮断板５１（並びに、ガスノズル５２および保持部材５３）を水平方向に移動する。本実施の形態では、遮断板移動機構は、遮断板５１を対向位置と待機位置とに選択的に配置する。対向位置では、スピンチャック２１に保持される基板９の上面９１に対して、遮断板５１の下面が対向する。詳細には、遮断板５１が対向位置に配置された状態では、ガスノズル５２が、上下方向において基板９の中心に対向する。また、遮断板５１の下面は、基板９の上面９１と平行であり、上面９１と近接する。待機位置では、例えば遮断板５１が、径方向におけるカップ部３の外側に配置される。 The blocking plate moving mechanism has the same structure as the head moving mechanism 42, for example, and moves the blocking plate 51 (and the gas nozzle 52 and the holding member 53) in the horizontal direction. In the present embodiment, the blocking plate moving mechanism selectively arranges the blocking plate 51 at the facing position and the standby position. At the facing position, the lower surface of the blocking plate 51 faces the upper surface 91 of the substrate 9 held by the spin chuck 21. Specifically, in a state where the blocking plate 51 is disposed at the facing position, the gas nozzle 52 faces the center of the substrate 9 in the vertical direction. Further, the lower surface of the blocking plate 51 is parallel to the upper surface 91 of the substrate 9 and is close to the upper surface 91. In the standby position, for example, the blocking plate 51 is disposed outside the cup portion 3 in the radial direction.
　後述の処理液による処理では、ガスノズル５２が基板９の上面９１の中心に向かって保護ガスを噴出することにより、上面９１と遮断板５１の下面との間の隙間を通って外側へと広がる保護ガスの流れが形成される。保護ガスの流れは、上面９１の中央部から全周に亘って周縁部へと向かう。これにより、基板９の上面９１において、周縁部よりも内側の領域（非処理領域）に処理液が入り込むことが防止または抑制され、当該領域が処理液から保護される。 In the processing with the processing liquid described later, the gas nozzle 52 blows out the protective gas toward the center of the upper surface 91 of the substrate 9, so that the protection spreads outward through the gap between the upper surface 91 and the lower surface of the blocking plate 51. A gas flow is formed. The flow of the protective gas is directed from the central part of the upper surface 91 to the peripheral part over the entire circumference. Thereby, in the upper surface 91 of the substrate 9, the processing liquid is prevented or suppressed from entering an area (non-processing area) inside the peripheral edge portion, and the area is protected from the processing liquid.
　図２は、基板処理装置１の一部を拡大して示す図である。図１に示すように、加熱ユニット６は、環状加熱部６１と、ガス供給源６２と、加熱部昇降機構（図示省略）とを備える。図２に示すように、環状加熱部６１は、加熱本体部６１１と、発熱体６１２とを備える。加熱本体部６１１は、例えば炭化ケイ素（ＳｉＣ）等のセラミックにて形成される。加熱本体部６１１は、中心軸Ｊ１を中心とする円環状の部材であり、スピンチャック２１の周囲を囲む。加熱本体部６１１の内径は、スピンチャック２１の外径よりも大きい。加熱本体部６１１の上面は、水平方向に広がり、スピンチャック２１に保持される基板９の下面９２に平行である。加熱本体部６１１の外径は、基板９の外径よりも僅かに小さい。加熱本体部６１１の外周縁は、上下方向において基板９の周縁部と重なっている。発熱体６１２は、例えば、ニクロム線等の抵抗発熱体が内蔵されたヒーターである。発熱体６１２は、水平方向に広がる円環板状であり、加熱本体部６１１の内部に設けられる。発熱体６１２と加熱本体部６１１の上面との間の距離は、全周に亘ってほぼ一定である。環状加熱部６１は、抵抗発熱体以外の熱源を利用するものであってもよい。 FIG. 2 is an enlarged view showing a part of the substrate processing apparatus 1. As shown in FIG. 1, the heating unit 6 includes an annular heating unit 61, a gas supply source 62, and a heating unit lifting mechanism (not shown). As shown in FIG. 2, the annular heating unit 61 includes a heating main body 611 and a heating element 612. The heating main body 611 is made of ceramic such as silicon carbide (SiC), for example. The heating main body 611 is an annular member centered on the central axis J <b> 1 and surrounds the periphery of the spin chuck 21. The inner diameter of the heating main body 611 is larger than the outer diameter of the spin chuck 21. The upper surface of the heating main body 611 extends in the horizontal direction and is parallel to the lower surface 92 of the substrate 9 held by the spin chuck 21. The outer diameter of the heating main body 611 is slightly smaller than the outer diameter of the substrate 9. The outer peripheral edge of the heating main body 611 overlaps the peripheral edge of the substrate 9 in the vertical direction. The heating element 612 is a heater in which a resistance heating element such as a nichrome wire is incorporated. The heating element 612 has an annular plate shape that extends in the horizontal direction, and is provided inside the heating main body 611. The distance between the heating element 612 and the upper surface of the heating main body 611 is substantially constant over the entire circumference. The annular heating unit 61 may use a heat source other than the resistance heating element.
　加熱本体部６１１の内部には、後述する加熱ガスのガス流路６１３が形成される。ガス流路６１３は、発熱体６１２と加熱本体部６１１の下面との間において、加熱本体部６１１の全周に亘って設けられる。例えば、ガス流路６１３は、加熱本体部６１１を複数回周回するように一繋がりに形成される。加熱本体部６１１の上面における内周縁の近傍には、複数の内側噴出口６１４が周方向に等間隔に設けられる。また、当該上面における外周縁の近傍には、複数の外側噴出口６１５が周方向に等間隔に設けられる。複数の内側噴出口６１４および複数の外側噴出口６１５はガス流路６１３に接続される。図２の例では、各内側噴出口６１４は、ガス流路６１３の最内周の部分から上方に延びる孔部の開口であり、後述の内周縁部６１９に設けられる。各外側噴出口６１５は、ガス流路６１３の最外周の部分から上方に延びる孔部の開口であり、後述の外周縁部６１０に設けられる。 Inside the heating main body 611, a gas passage 613 for a heating gas, which will be described later, is formed. The gas flow path 613 is provided over the entire circumference of the heating main body 611 between the heating element 612 and the lower surface of the heating main body 611. For example, the gas flow path 613 is formed in a continuous manner so as to go around the heating main body 611 a plurality of times. In the vicinity of the inner peripheral edge on the upper surface of the heating main body 611, a plurality of inner jet nozzles 614 are provided at equal intervals in the circumferential direction. A plurality of outer jet nozzles 615 are provided at equal intervals in the circumferential direction in the vicinity of the outer peripheral edge on the upper surface. The plurality of inner jet ports 614 and the plurality of outer jet ports 615 are connected to the gas flow path 613. In the example of FIG. 2, each inner jet port 614 is an opening of a hole extending upward from the innermost peripheral portion of the gas flow path 613, and is provided in an inner peripheral edge 619 described later. Each outer spout 615 is an opening of a hole extending upward from the outermost peripheral portion of the gas flow path 613 and is provided in an outer peripheral edge 610 described later.
　環状加熱部６１には、ガス流路６１３の所定位置から下方に延びるガス導入孔（図示省略）が形成される。ガス導入孔は、環状加熱部６１の下面にて開口する。ガス導入孔には、弁を介してガス供給源６２（図１参照）が接続される。ガス供給源６２は、ガス流路６１３に不活性ガスを供給する。加熱本体部６１１を複数回周回するガス流路６１３において、例えば、内側噴出口６１４に接続される位置と外側噴出口６１５に接続される位置との中間に、ガス導入孔が形成される。したがって、ガス供給源６２から供給される不活性ガスの一部は、ガス流路６１３の最内周の部分に向かって流れ、複数の内側噴出口６１４から噴出される。不活性ガスの残りは、ガス流路６１３の最外周の部分に向かって流れ、複数の外側噴出口６１５から噴出される。 In the annular heating part 61, a gas introduction hole (not shown) extending downward from a predetermined position of the gas flow path 613 is formed. The gas introduction hole opens at the lower surface of the annular heating unit 61. A gas supply source 62 (see FIG. 1) is connected to the gas introduction hole via a valve. The gas supply source 62 supplies an inert gas to the gas flow path 613. In the gas flow path 613 that goes around the heating main body 611 a plurality of times, for example, a gas introduction hole is formed between the position connected to the inner jet outlet 614 and the position connected to the outer jet outlet 615. Accordingly, part of the inert gas supplied from the gas supply source 62 flows toward the innermost peripheral portion of the gas flow path 613 and is ejected from the plurality of inner ejection ports 614. The remainder of the inert gas flows toward the outermost periphery of the gas flow path 613 and is ejected from the plurality of outer ejection ports 615.
　このとき、ガス流路６１３を流れる不活性ガスは、発熱体６１２により加熱されるため、複数の内側噴出口６１４および複数の外側噴出口６１５では、加熱された不活性ガス（以下、「加熱ガス」という。）が上方に向かって噴出される。基板９の下面９２と環状加熱部６１との間の空間に噴出された加熱ガスは、環状加熱部６１の周囲に存在するガスが、当該空間に入り込むことを抑制するとともに、基板９の下面９２も加熱する。 At this time, since the inert gas flowing through the gas flow path 613 is heated by the heating element 612, the heated inert gas (hereinafter referred to as “heating gas”) at the plurality of inner jet ports 614 and the plurality of outer jet ports 615. ”Is ejected upward. The heating gas ejected into the space between the lower surface 92 of the substrate 9 and the annular heating unit 61 suppresses the gas existing around the annular heating unit 61 from entering the space, and the lower surface 92 of the substrate 9. Also heat.
　加熱部昇降機構は、環状加熱部６１を上下方向に昇降する。本実施の形態では、加熱部昇降機構は、環状加熱部６１を近接位置と離間位置とに選択的に配置する。図１では、近接位置に配置された環状加熱部６１を実線で示し、離間位置に配置された環状加熱部６１を二点鎖線で示している。 The heating unit lifting mechanism moves the annular heating unit 61 up and down. In the present embodiment, the heating unit lifting mechanism selectively arranges the annular heating unit 61 at the proximity position and the separation position. In FIG. 1, the annular heating unit 61 arranged at the close position is shown by a solid line, and the annular heating unit 61 arranged at the separated position is shown by a two-dot chain line.
　近接位置では、スピンチャック２１に保持される基板９の下面９２に対して、環状加熱部６１の上面が近接する。詳細には、環状加熱部６１の上面は、基板９の下面９２において中央部よりも外側の領域と対向する。近接位置に配置された環状加熱部６１の上面と、基板９の下面９２との間の間隔は、例えば、２～５ｍｍである。既述のように、環状加熱部６１の外周縁は、上下方向において基板９の周縁部と重なっており、環状加熱部６１が近接位置に配置された状態では、環状加熱部６１の上面の外周縁は、基板９の外周縁に近接する。後述の処理液による処理では、近接位置に配置された環状加熱部６１により基板９が下面９２側から加熱されることにより、処理液による基板９の処理レートを向上することが可能となる。離間位置における上記間隔は、例えば近接位置における上記間隔の数倍となる。基板処理装置１への基板９の搬入搬出時には、環状加熱部６１が離間位置に配置されることにより、環状加熱部６１が外部の搬送機構と干渉することが防止される。加熱ユニット６では、環状加熱部６１が近接位置と離間位置との間の任意の位置に配置可能であってよい。 At the close position, the upper surface of the annular heating unit 61 is close to the lower surface 92 of the substrate 9 held by the spin chuck 21. Specifically, the upper surface of the annular heating unit 61 faces a region outside the center portion on the lower surface 92 of the substrate 9. The distance between the upper surface of the annular heating unit 61 arranged at the close position and the lower surface 92 of the substrate 9 is, for example, 2 to 5 mm. As described above, the outer peripheral edge of the annular heating unit 61 overlaps with the peripheral part of the substrate 9 in the vertical direction, and when the annular heating unit 61 is disposed in the proximity position, the outer periphery of the annular heating unit 61 is outside the upper surface. The peripheral edge is close to the outer peripheral edge of the substrate 9. In the processing with the processing liquid described later, the processing rate of the substrate 9 with the processing liquid can be improved by heating the substrate 9 from the lower surface 92 side by the annular heating unit 61 disposed at the close position. The interval at the separation position is, for example, several times the interval at the proximity position. When the substrate 9 is carried into and out of the substrate processing apparatus 1, the annular heating unit 61 is disposed at the separated position, thereby preventing the annular heating unit 61 from interfering with an external transport mechanism. In the heating unit 6, the annular heating unit 61 may be disposed at any position between the proximity position and the separation position.
　図２に示すように、基板処理装置１は、外側周壁部７１と、内側周壁部７２と、ガス噴出部７３とをさらに備える。外側周壁部７１は、中心軸Ｊ１を中心とする円筒部材であり、全周に亘って一定の厚さを有する。外側周壁部７１は、ケーシング２３の上面における外周縁に沿って設けられ、外側周壁部７１の下端は、当該上面に固定される。外側周壁部７１は、ケーシング２３の上面から上方に突出する。例えば、外側周壁部７１の内径は、スピンチャック２１に保持される基板９の外径よりも小さく、外側周壁部７１の外径は当該基板９の外径よりも大きい。また、外側周壁部７１の内径は、環状加熱部６１の外径よりも僅かに大きい。外側周壁部７１の上端は、近接位置に配置された環状加熱部６１の下面よりも上方に位置し、環状加熱部６１の上面よりも下方に位置する。外側周壁部７１の上端部の内周面は、環状加熱部６１の外周面と微小な隙間を介して径方向に対向する。上記隙間の幅は、全周に亘ってほぼ一定である。 As shown in FIG. 2, the substrate processing apparatus 1 further includes an outer peripheral wall portion 71, an inner peripheral wall portion 72, and a gas ejection portion 73. The outer peripheral wall portion 71 is a cylindrical member centered on the central axis J1 and has a constant thickness over the entire circumference. The outer peripheral wall portion 71 is provided along the outer peripheral edge of the upper surface of the casing 23, and the lower end of the outer peripheral wall portion 71 is fixed to the upper surface. The outer peripheral wall portion 71 protrudes upward from the upper surface of the casing 23. For example, the inner diameter of the outer peripheral wall portion 71 is smaller than the outer diameter of the substrate 9 held by the spin chuck 21, and the outer diameter of the outer peripheral wall portion 71 is larger than the outer diameter of the substrate 9. Further, the inner diameter of the outer peripheral wall portion 71 is slightly larger than the outer diameter of the annular heating portion 61. The upper end of the outer peripheral wall portion 71 is located above the lower surface of the annular heating unit 61 disposed at the close position and is located below the upper surface of the annular heating unit 61. The inner peripheral surface of the upper end portion of the outer peripheral wall portion 71 is opposed to the outer peripheral surface of the annular heating portion 61 in the radial direction through a minute gap. The width of the gap is substantially constant over the entire circumference.
　既述のように、環状加熱部６１の上面の外周縁は、基板９の外周縁に近接する。上下方向に沿って見た環状加熱部６１において、外周縁、および、当該外周縁の近傍を含む部位を「外周縁部６１０」と呼ぶと、環状加熱部６１の外周縁部６１０は、基板９の外周縁に近接する。また、環状加熱部６１の外周縁部６１０と外側周壁部７１の上端部との間の隙間の幅は僅かである。したがって、環状加熱部６１の外周縁部６１０および外側周壁部７１により、基板９下側の空間の周囲を囲む周壁部７１０が構成される。後述するように、周壁部７１０は、基板９の下面９２を防護するためのものであり、以下、「防護周壁部７１０」という。防護周壁部７１０は、上端が基板９の外周縁に近接する円筒状であると捉えることができる。防護周壁部７１０の下端は、ケーシング２３の上面と接し、中央突出部２３１の上面よりも下方に位置する。 As described above, the outer peripheral edge of the upper surface of the annular heating unit 61 is close to the outer peripheral edge of the substrate 9. In the annular heating portion 61 viewed along the vertical direction, when the outer peripheral edge and a portion including the vicinity of the outer peripheral edge are referred to as an “outer peripheral edge portion 610”, the outer peripheral edge portion 610 of the annular heating portion 61 is the substrate 9. Proximate to the outer periphery. Further, the width of the gap between the outer peripheral edge 610 of the annular heating unit 61 and the upper end of the outer peripheral wall 71 is slight. Accordingly, the outer peripheral edge portion 610 and the outer peripheral wall portion 71 of the annular heating portion 61 constitute a peripheral wall portion 710 that surrounds the space below the substrate 9. As will be described later, the peripheral wall portion 710 protects the lower surface 92 of the substrate 9 and is hereinafter referred to as a “protective peripheral wall portion 710”. The protective peripheral wall 710 can be regarded as a cylindrical shape whose upper end is close to the outer peripheral edge of the substrate 9. The lower end of the protective peripheral wall portion 710 is in contact with the upper surface of the casing 23 and is located below the upper surface of the central protruding portion 231.
　防護周壁部７１０の上側開口は、基板９によりおよそ閉塞される。したがって、基板９の上面９１近傍、および、防護周壁部７１０の周囲に存在するガスが、防護周壁部７１０の上側から防護周壁部７１０の内部に入り込むことが抑制される。また、防護周壁部７１０の下側開口は、ケーシング２３の上面により閉塞される。すなわち、ケーシング２３は、防護周壁部７１０の下側開口を閉塞する閉塞部である。これにより、防護周壁部７１０の周囲に存在するガスが、防護周壁部７１０の下側から防護周壁部７１０の内部に入り込むことが抑制される。なお、防護周壁部７１０の外側周壁部７１では、各種配管やケーブル用の貫通孔が必要に応じて設けられてもよい。 The upper opening of the protective peripheral wall 710 is approximately blocked by the substrate 9. Therefore, the gas existing near the upper surface 91 of the substrate 9 and around the protective peripheral wall portion 710 is prevented from entering the protective peripheral wall portion 710 from the upper side of the protective peripheral wall portion 710. Further, the lower opening of the protective peripheral wall portion 710 is closed by the upper surface of the casing 23. That is, the casing 23 is a closing portion that closes the lower opening of the protective peripheral wall portion 710. Thereby, the gas existing around the protective peripheral wall portion 710 is suppressed from entering the protective peripheral wall portion 710 from the lower side of the protective peripheral wall portion 710. In addition, in the outer peripheral wall portion 71 of the protective peripheral wall portion 710, through holes for various pipes and cables may be provided as necessary.
　内側周壁部７２は、中心軸Ｊ１を中心とする円筒部材であり、全周に亘って一定の厚さを有する。内側周壁部７２は、ケーシング２３の中央突出部２３１の上面における外周縁に沿って設けられ、内側周壁部７２の下端は、当該上面に固定される。内側周壁部７２は、中央突出部２３１の上面から上方に突出する。例えば、内側周壁部７２の内径は、スピンチャック２１の外径よりも大きい。また、内側周壁部７２の外径は、環状加熱部６１の内径よりも僅かに小さい。内側周壁部７２の上端は、近接位置に配置された環状加熱部６１の下面よりも上方に位置し、環状加熱部６１の上面よりも下方に位置する。内側周壁部７２の上端部の外周面は、環状加熱部６１の内周面と微小な隙間を介して径方向に対向する。上記隙間の幅は、全周に亘ってほぼ一定である。内側周壁部７２により、スピンチャック２１と環状加熱部６１との間の空間がある程度埋められる。 The inner peripheral wall portion 72 is a cylindrical member centered on the central axis J1, and has a constant thickness over the entire circumference. The inner peripheral wall portion 72 is provided along the outer peripheral edge of the upper surface of the central projecting portion 231 of the casing 23, and the lower end of the inner peripheral wall portion 72 is fixed to the upper surface. The inner peripheral wall portion 72 protrudes upward from the upper surface of the central protruding portion 231. For example, the inner diameter of the inner peripheral wall portion 72 is larger than the outer diameter of the spin chuck 21. Further, the outer diameter of the inner peripheral wall portion 72 is slightly smaller than the inner diameter of the annular heating portion 61. The upper end of the inner peripheral wall portion 72 is located above the lower surface of the annular heating unit 61 disposed at the close position, and is located below the upper surface of the annular heating unit 61. The outer peripheral surface of the upper end portion of the inner peripheral wall portion 72 is opposed to the inner peripheral surface of the annular heating unit 61 in the radial direction through a minute gap. The width of the gap is substantially constant over the entire circumference. The space between the spin chuck 21 and the annular heating part 61 is filled to some extent by the inner peripheral wall part 72.
　上下方向に沿って見た環状加熱部６１において、内周縁、および、当該内周縁の近傍を含む部位を「内周縁部６１９」と呼ぶと、上記のように、内側周壁部７２の上端は、環状加熱部６１の内周縁部６１９に近接する。また、内側周壁部７２の下側開口は、軸部２２１の周囲において中央突出部２３１の上面により閉塞される。したがって、環状加熱部６１の下側に存在するガスが、環状加熱部６１の内周面に囲まれる空間（以下、「内周側の空間」という。）に入り込む、または、巻き込まれることが、内側周壁部７２により抑制される。環状加熱部６１の内周側の空間の上側は、基板９により覆われる。これにより、基板９の上面９１近傍に存在するガスが、環状加熱部６１の内周側に入り込むことが防止される。 In the annular heating part 61 viewed along the vertical direction, when the inner peripheral edge and a portion including the vicinity of the inner peripheral edge are referred to as “inner peripheral edge part 619”, the upper end of the inner peripheral wall part 72 is as described above. Proximate to the inner peripheral edge 619 of the annular heating unit 61. Further, the lower opening of the inner peripheral wall portion 72 is closed by the upper surface of the central projecting portion 231 around the shaft portion 221. Therefore, the gas existing below the annular heating unit 61 enters or is entrained in a space surrounded by the inner peripheral surface of the annular heating unit 61 (hereinafter referred to as “inner circumferential side space”). It is suppressed by the inner peripheral wall portion 72. The upper side of the space on the inner peripheral side of the annular heating unit 61 is covered with the substrate 9. Thereby, the gas existing in the vicinity of the upper surface 91 of the substrate 9 is prevented from entering the inner peripheral side of the annular heating unit 61.
　ガス噴出部７３は、中心軸Ｊ１を中心とする環状の中空部材である。例えば、ガス噴出部７３は、環状のパイプである。ガス噴出部７３の直径は、内側周壁部７２の直径とほぼ同じであり、ガス噴出部７３は、内側周壁部７２の上端面に固定される。ガス噴出部７３は、径方向外側に向かって開口する複数の噴出口７３１を有する。複数の噴出口７３１は、周方向に等間隔に設けられる。ガス噴出部７３では、径方向外側に向かって開口するとともに周方向に延びるスリットが、複数の噴出口７３１に代えて設けられてもよい。図１に示すように、ガス噴出部７３には、弁を介してガス供給源６２が接続される。ガス供給源６２は不活性ガスをガス噴出部７３に供給する。これにより、複数の噴出口７３１から径方向外側に向かって不活性ガスが噴出され、環状加熱部６１の内周側の空間に充填される。基板処理装置１では、ガス噴出部７３と、環状加熱部６１のガス流路６１３とに対して個別のガス供給源から不活性ガスが供給されてもよい。また、ガス噴出部７３に供給されるガスが加熱されていてもよい。 The gas ejection part 73 is an annular hollow member centered on the central axis J1. For example, the gas ejection part 73 is an annular pipe. The diameter of the gas ejection part 73 is substantially the same as the diameter of the inner peripheral wall part 72, and the gas ejection part 73 is fixed to the upper end surface of the inner peripheral wall part 72. The gas ejection part 73 has a plurality of ejection ports 731 that open outward in the radial direction. The plurality of jet nozzles 731 are provided at equal intervals in the circumferential direction. In the gas ejection part 73, slits that open toward the radially outer side and extend in the circumferential direction may be provided instead of the plurality of ejection ports 731. As shown in FIG. 1, the gas supply source 62 is connected to the gas ejection part 73 through a valve. The gas supply source 62 supplies an inert gas to the gas ejection unit 73. As a result, the inert gas is ejected from the plurality of ejection ports 731 toward the radially outer side, and is filled in the space on the inner peripheral side of the annular heating unit 61. In the substrate processing apparatus 1, the inert gas may be supplied from individual gas supply sources to the gas ejection unit 73 and the gas flow path 613 of the annular heating unit 61. Moreover, the gas supplied to the gas ejection part 73 may be heated.
　図３は、基板処理装置１が基板９を処理する流れを示す図である。まず、処理対象の基板９が、外部の搬送機構により図１の基板処理装置１へと搬送され、スピンチャック２１により基板９の下面９２が吸引吸着により保持される（ステップＳ１１）。本実施の形態では、基板９の下面９２には所定の薄膜（例えば、酸化珪素または窒化珪素の薄膜）が形成されている。基板処理装置１への基板９の搬送時には、カップ可動部３１が下位置に配置され、環状加熱部６１が離間位置に配置される。また、ノズルヘッド４１および遮断板５１もそれぞれ待機位置に配置される。これにより、カップ可動部３１、環状加熱部６１、ノズルヘッド４１および遮断板５１が当該搬送機構と干渉することが防止される。 FIG. 3 is a diagram showing a flow in which the substrate processing apparatus 1 processes the substrate 9. First, the substrate 9 to be processed is transferred to the substrate processing apparatus 1 of FIG. 1 by an external transfer mechanism, and the lower surface 92 of the substrate 9 is held by suction adsorption by the spin chuck 21 (step S11). In the present embodiment, a predetermined thin film (for example, a thin film of silicon oxide or silicon nitride) is formed on the lower surface 92 of the substrate 9. When the substrate 9 is transported to the substrate processing apparatus 1, the cup movable unit 31 is disposed at the lower position, and the annular heating unit 61 is disposed at the separated position. Further, the nozzle head 41 and the blocking plate 51 are also arranged at the standby positions. Thereby, the cup movable part 31, the annular heating part 61, the nozzle head 41, and the blocking plate 51 are prevented from interfering with the transport mechanism.
　基板９が搬入されると、ノズルヘッド４１が処理位置に移動し、遮断板５１が対向位置に移動する。また、カップ可動部３１が上位置に配置され、環状加熱部６１が近接位置に配置される。このように、カップ可動部３１、環状加熱部６１、ノズルヘッド４１および遮断板５１が、図１中に実線で示す位置に配置される。本実施の形態では、環状加熱部６１において、発熱体６１２（図２参照）の一定温度での加熱、および、内側噴出口６１４および外側噴出口６１５からの加熱ガスの噴出が常時行われる。したがって、環状加熱部６１が近接位置に配置されることにより、基板９の加熱が開始される。環状加熱部６１における加熱ガスの噴出量は、例えば毎分２０～１００Ｌ（リットル）である。基板９の目標加熱温度は、例えば４０～８０℃である。また、遮断板５１に設けられたガスノズル５２からの保護ガスの噴出、および、ガス噴出部７３からの不活性ガスの噴出も開始される。ガスノズル５２における保護ガスの噴出量は、例えば毎分１０～５０Ｌである。ガス噴出部７３における不活性ガスの噴出量は、例えば毎分６０～２００Ｌである。 When the substrate 9 is loaded, the nozzle head 41 moves to the processing position, and the blocking plate 51 moves to the facing position. Moreover, the cup movable part 31 is arrange | positioned in an upper position, and the cyclic | annular heating part 61 is arrange | positioned in a proximity position. Thus, the cup movable part 31, the annular heating part 61, the nozzle head 41, and the blocking plate 51 are arranged at positions indicated by solid lines in FIG. In the present embodiment, in the annular heating unit 61, heating of the heating element 612 (see FIG. 2) at a constant temperature and ejection of heated gas from the inner jet port 614 and the outer jet port 615 are always performed. Therefore, the heating of the substrate 9 is started by arranging the annular heating unit 61 at the close position. The amount of heating gas ejected in the annular heating unit 61 is, for example, 20 to 100 L (liter) per minute. The target heating temperature of the substrate 9 is 40 to 80 ° C., for example. Moreover, the ejection of the protective gas from the gas nozzle 52 provided on the blocking plate 51 and the ejection of the inert gas from the gas ejection part 73 are also started. The amount of protective gas ejected from the gas nozzle 52 is, for example, 10 to 50 L per minute. The amount of inert gas ejected from the gas ejection portion 73 is, for example, 60 to 200 L per minute.
　続いて、スピンチャック２１の回転が開始される（ステップＳ１２）。スピンチャック２１の回転速度は、例えば、８００～２０００ｒｐｍに設定される。所定時間の経過により、基板９の周縁部の温度が上昇して安定した後、ノズル部４１２から基板９の上面９１の外周縁に対してＤＨＦ（希フッ酸）が処理液として供給される（ステップＳ１３）。基板９の上面９１に形成された薄膜において、周縁部上の部分がＤＨＦにより除去（エッチング）される。ＤＨＦは、回転する基板９の外周縁から外側に飛散し、カップ可動部３１の内周面により受けられる。なお、図１の上面ガス供給部５により基板９の上面９１の中央部に噴出された保護ガスは、基板９の回転に伴う遠心力の影響により、全周に亘って周縁部へと向かうため、周縁部よりも内側の領域（非処理領域）にＤＨＦが入り込むことが防止または抑制される。図２では、上面ガス供給部５の遮断板５１等の図示を省略している。 Subsequently, the rotation of the spin chuck 21 is started (step S12). The rotational speed of the spin chuck 21 is set to 800 to 2000 rpm, for example. After the predetermined time has elapsed, the temperature of the peripheral portion of the substrate 9 rises and stabilizes, and then DHF (dilute hydrofluoric acid) is supplied as a processing liquid from the nozzle portion 412 to the outer peripheral edge of the upper surface 91 of the substrate 9 ( Step S13). In the thin film formed on the upper surface 91 of the substrate 9, the portion on the peripheral edge is removed (etched) by DHF. DHF is scattered outward from the outer peripheral edge of the rotating substrate 9 and is received by the inner peripheral surface of the cup movable portion 31. Note that the protective gas ejected to the central portion of the upper surface 91 of the substrate 9 by the upper surface gas supply unit 5 of FIG. 1 is directed to the peripheral portion over the entire circumference due to the influence of the centrifugal force accompanying the rotation of the substrate 9. , DHF is prevented or suppressed from entering a region (non-processed region) inside the peripheral portion. In FIG. 2, illustration of the shielding plate 51 and the like of the upper surface gas supply unit 5 is omitted.
　このとき、環状加熱部６１により基板９が加熱されていることにより、ＤＨＦによる基板９の薄膜のエッチングレートが高くなり、ＤＨＦの消費量を削減することが可能となる。一方、基板９を介してＤＨＦが加熱されることにより、比較的多くのフッ化水素ガスが発生する。フッ化水素ガスは、カップ部３における排気動作により、基板９の外周縁と上側傾斜部３１３の内周縁３１４との間の隙間からカップ部３の内部へと導かれる。図２では、ガスの流れを符号Ａ１を付す太い矢印で模式的に示している。 At this time, since the substrate 9 is heated by the annular heating unit 61, the etching rate of the thin film of the substrate 9 by DHF is increased, and the consumption of DHF can be reduced. On the other hand, when DHF is heated through the substrate 9, a relatively large amount of hydrogen fluoride gas is generated. The hydrogen fluoride gas is guided to the inside of the cup portion 3 from the gap between the outer peripheral edge of the substrate 9 and the inner peripheral edge 314 of the upper inclined portion 313 by the exhaust operation in the cup portion 3. In FIG. 2, the gas flow is schematically shown by a thick arrow labeled A1.
　カップ部３の内部では、上端が基板９の外周縁に近接する防護周壁部７１０の存在により、フッ化水素ガスが、防護周壁部７１０の上側から防護周壁部７１０の内部に入り込むことが抑制される。また、防護周壁部７１０の下側開口は、ケーシング２３の上面により閉塞されることにより、フッ化水素ガスが、防護周壁部７１０の下側から防護周壁部７１０の内部に入り込むことが抑制される。さらに、防護周壁部７１０の外側に配置される排気口３４１により、フッ化水素ガスを含む、防護周壁部７１０の周囲のガスが排気される。 Inside the cup part 3, the presence of the protective peripheral wall part 710 whose upper end is close to the outer peripheral edge of the substrate 9 prevents hydrogen fluoride gas from entering the protective peripheral wall part 710 from the upper side of the protective peripheral wall part 710. The Further, the lower opening of the protective peripheral wall portion 710 is blocked by the upper surface of the casing 23, so that hydrogen fluoride gas is prevented from entering the protective peripheral wall portion 710 from the lower side of the protective peripheral wall portion 710. . Further, the gas around the protective peripheral wall portion 710 including the hydrogen fluoride gas is exhausted by the exhaust port 341 disposed outside the protective peripheral wall portion 710.
　基板９の回転に伴う遠心力の影響により、基板９の下面９２近傍、すなわち、当該下面９２と環状加熱部６１の上面との間の空間に存在するガスが、全周に亘って基板９の外周縁へと向かう。上記空間には、ガス噴出部７３からの不活性ガス、および、環状加熱部６１からの加熱ガス（加熱された不活性ガス）が入り込むため、当該空間が過度に低い圧力となることはない。また、上端が環状加熱部６１の内周縁部６１９に近接する内側周壁部７２の存在により、環状加熱部６１よりも下側に存在するガス（不活性ガス以外のガス）が、環状加熱部６１の内周側の空間に入り込んで、下面９２と環状加熱部６１の上面との間の空間へと流れ込むことが抑制される。基板処理装置１では、基板９の下側において、外側周壁部７１、内側周壁部７２およびガス噴出部７３により、ガスの流れが制御されていると捉えることも可能である。 Due to the influence of the centrifugal force accompanying the rotation of the substrate 9, the gas existing in the vicinity of the lower surface 92 of the substrate 9, that is, in the space between the lower surface 92 and the upper surface of the annular heating unit 61, Head to the outer periphery. Since the inert gas from the gas ejection part 73 and the heated gas (heated inert gas) from the annular heating part 61 enter the space, the space does not have an excessively low pressure. Further, due to the presence of the inner peripheral wall portion 72 whose upper end is close to the inner peripheral edge portion 619 of the annular heating portion 61, a gas (a gas other than the inert gas) existing below the annular heating portion 61 is caused to flow into the annular heating portion 61. It is suppressed that it enters into the space of the inner peripheral side and flows into the space between the lower surface 92 and the upper surface of the annular heating unit 61. In the substrate processing apparatus 1, it can be understood that the gas flow is controlled by the outer peripheral wall portion 71, the inner peripheral wall portion 72, and the gas ejection portion 73 below the substrate 9.
　ＤＨＦの供給は所定時間継続され、その後、停止される。続いて、ノズル部４１３から基板９の外周縁に対してリンス液が処理液として供給される。リンス液は、基板９の外周縁から外側に飛散し、カップ可動部３１の内周面により受けられる。リンス液の供給により、基板９の周縁部に付着するＤＨＦが除去される。ＤＨＦの供給時と同様に、上面ガス供給部５からの保護ガスにより、基板９の上面９１において周縁部よりも内側の領域にリンス液が入り込むことが防止または抑制される。また、防護周壁部７１０の周囲に存在するガスが、防護周壁部７１０の内部に入り込むことが抑制される。 Supplied with DHF is continued for a predetermined time and then stopped. Subsequently, a rinsing liquid is supplied as a processing liquid from the nozzle portion 413 to the outer peripheral edge of the substrate 9. The rinse liquid scatters outward from the outer peripheral edge of the substrate 9 and is received by the inner peripheral surface of the cup movable portion 31. By supplying the rinse liquid, DHF adhering to the peripheral portion of the substrate 9 is removed. As in the case of supplying DHF, the protective gas from the upper surface gas supply unit 5 prevents or suppresses the rinsing liquid from entering the region inside the peripheral portion on the upper surface 91 of the substrate 9. Further, the gas existing around the protective peripheral wall portion 710 is suppressed from entering the protective peripheral wall portion 710.
　リンス液の供給は所定時間継続された後、停止される。続いて、スピンチャック２１の回転速度を処理液の供給時よりも高くすることにより、基板９の乾燥処理が開始される（ステップＳ１４）。乾燥処理が完了すると、スピンチャック２１の回転が停止される（ステップＳ１５）。また、上面ガス供給部５からの保護ガスの噴出、および、ガス噴出部７３からの不活性ガスの噴出が停止される。続いて、図１中に二点鎖線で示すように、カップ可動部３１が下位置に配置され、環状加熱部６１が離間位置に配置される。また、ノズルヘッド４１および遮断板５１が、待機位置にそれぞれ移動する。そして、スピンチャック２１による基板９の保持が解除されるとともに、外部の搬送機構により、処理後の基板９が搬出される（ステップＳ１６）。これにより、基板処理装置１による基板９の処理が完了する。上記の処理例では、基板９の外周縁に対してＤＨＦおよびリンス液が供給されるが、例えば、ＤＨＦおよびリンス液の供給前に、基板９の外周縁に対してノズル部４１１からＳＣ－１が供給されてもよい。 供給 The supply of the rinse liquid is stopped for a predetermined time and then stopped. Subsequently, the drying process of the substrate 9 is started by increasing the rotation speed of the spin chuck 21 as compared with the time of supplying the processing liquid (step S14). When the drying process is completed, the rotation of the spin chuck 21 is stopped (step S15). Moreover, the ejection of the protective gas from the upper surface gas supply unit 5 and the ejection of the inert gas from the gas ejection unit 73 are stopped. Subsequently, as indicated by a two-dot chain line in FIG. 1, the cup movable unit 31 is disposed at the lower position, and the annular heating unit 61 is disposed at the separated position. Further, the nozzle head 41 and the blocking plate 51 are moved to the standby position. Then, the holding of the substrate 9 by the spin chuck 21 is released, and the processed substrate 9 is unloaded by an external transport mechanism (step S16). Thereby, the processing of the substrate 9 by the substrate processing apparatus 1 is completed. In the above processing example, the DHF and the rinsing liquid are supplied to the outer peripheral edge of the substrate 9. For example, before supplying the DHF and the rinsing liquid, the SC-1 to SC-1 are applied to the outer peripheral edge of the substrate 9. May be supplied.
　図４は、比較例の基板処理装置８を示す図である。図４では、ガスの流れを符号Ａ２を付す太い矢印で模式的に示している。比較例の基板処理装置８では、図１の基板処理装置１における外側周壁部７１、内側周壁部７２およびガス噴出部７３が省略される。既述のように、基板９が回転することにより、基板９の下面９２と環状加熱部６１の上面との間の空間に存在するガスが基板９の外周縁へと向かうため、比較例の基板処理装置８では、環状加熱部６１の内周側の空間に、周囲のガスが巻き込まれる。したがって、基板９の外周縁にエッチング液であるＤＨＦを供給する際に、ＤＨＦから発生するフッ化水素ガスが、カップ部３の内部において環状加熱部６１の下側を通過して、環状加熱部６１の内周側の空間に入り込む。そして、基板９の下面９２と環状加熱部６１の上面との間の空間を通過して、基板９の外周縁へと向かう。 FIG. 4 is a view showing a substrate processing apparatus 8 of a comparative example. In FIG. 4, the gas flow is schematically shown by a thick arrow labeled A2. In the substrate processing apparatus 8 of the comparative example, the outer peripheral wall part 71, the inner peripheral wall part 72, and the gas ejection part 73 in the substrate processing apparatus 1 of FIG. 1 are omitted. As described above, since the substrate 9 rotates, the gas existing in the space between the lower surface 92 of the substrate 9 and the upper surface of the annular heating unit 61 moves toward the outer peripheral edge of the substrate 9. In the processing apparatus 8, ambient gas is caught in the space on the inner peripheral side of the annular heating unit 61. Therefore, when supplying DHF as an etching solution to the outer peripheral edge of the substrate 9, hydrogen fluoride gas generated from DHF passes under the annular heating part 61 inside the cup part 3, and the annular heating part 61 enters the space on the inner circumference side. Then, it passes through the space between the lower surface 92 of the substrate 9 and the upper surface of the annular heating unit 61 and moves toward the outer peripheral edge of the substrate 9.
　その結果、比較例の基板処理装置８では、基板９の下面９２において中央部（スピンチャック２１）よりも外側の領域における薄膜の部分が、フッ化水素ガスによりエッチングされる。ＤＨＦ以外の処理液（例えば、ＳＣ－１、ＳＣ－２またはフッ硝酸等）を用いる場合でも、当該処理液から発生するガスが下面９２に形成された薄膜との反応性を有するときには、当該薄膜のエッチングや変質等が生じてしまう。また、処理液成分が基板９の下面９２に付着した状態で、当該基板９がフープ等に収容された場合、当該基板９に対向する他の基板に当該処理液成分が転写され、当該他の基板上の薄膜が当該処理液成分により変質する可能性もある。 As a result, in the substrate processing apparatus 8 of the comparative example, the thin film portion in the region outside the central portion (spin chuck 21) on the lower surface 92 of the substrate 9 is etched with hydrogen fluoride gas. Even when a treatment liquid other than DHF (for example, SC-1, SC-2, or hydrofluoric acid) is used, if the gas generated from the treatment liquid has reactivity with the thin film formed on the lower surface 92, the thin film Etching or alteration occurs. In addition, when the substrate 9 is accommodated in a hoop or the like with the processing liquid component attached to the lower surface 92 of the substrate 9, the processing liquid component is transferred to the other substrate facing the substrate 9. There is also a possibility that the thin film on the substrate is altered by the treatment liquid component.
　図５は、基板９の下面９２におけるエッチング量の測定結果を示す図である。図５の縦軸は、エッチング量を示し、横軸は、下面９２の半径位置を示す。また、下面９２においてスピンチャック２１と接触する中央部を、符号Ｈ１を付す矢印で示している。比較例の基板処理装置８において図３と同様の処理を行う場合、図５中に符号Ｄ２を付す点で示すように、下面９２の中央部よりも外側の領域においてエッチング量が大きくなる。特に、当該外側の領域における中央部近傍では、エッチング量が最も大きくなっている。これにより、処理液のガスが、環状加熱部６１の内周側の空間に入り込み、下面９２と環状加熱部６１の上面との間の空間を通過して基板９の外周縁へと向かっていることが推測される。また、基板９の外周縁近傍においてもエッチング量が大きくなっており、処理液のガスは、基板９の外周縁側からも下面９２と環状加熱部６１の上面との間の空間に入り込んでいると推測される。一方、スピンチャック２１と接触する中央部は、ほとんどエッチングされない。なお、比較例の基板処理装置８において環状加熱部６１を省略する場合でも、下面９２の中央部よりも外側の領域においてエッチング量が大きくなることが確認されている。 FIG. 5 is a diagram showing the measurement results of the etching amount on the lower surface 92 of the substrate 9. The vertical axis in FIG. 5 indicates the etching amount, and the horizontal axis indicates the radial position of the lower surface 92. In addition, the central portion that contacts the spin chuck 21 on the lower surface 92 is indicated by an arrow denoted by reference numeral H1. When the substrate processing apparatus 8 of the comparative example performs the same processing as in FIG. 3, the etching amount increases in a region outside the central portion of the lower surface 92, as indicated by the point denoted by D <b> 2 in FIG. 5. In particular, the etching amount is the largest in the vicinity of the central portion in the outer region. Thereby, the gas of the processing liquid enters the space on the inner peripheral side of the annular heating unit 61, passes through the space between the lower surface 92 and the upper surface of the annular heating unit 61, and moves toward the outer peripheral edge of the substrate 9. I guess that. Further, the etching amount is large near the outer peripheral edge of the substrate 9, and the gas of the processing liquid enters the space between the lower surface 92 and the upper surface of the annular heating unit 61 from the outer peripheral edge side of the substrate 9. Guessed. On the other hand, the central portion in contact with the spin chuck 21 is hardly etched. Even when the annular heating unit 61 is omitted in the substrate processing apparatus 8 of the comparative example, it has been confirmed that the etching amount increases in a region outside the central portion of the lower surface 92.
　これに対し、図１の基板処理装置１において図３の処理を行う場合、図５中に符号Ｄ１を付す点（図５では、点Ｄ１同士が互いに重なるため、太い線状となっている。）で示すように、下面９２の中央部よりも外側の領域におけるエッチング量が、比較例の基板処理装置８に比べて大幅に小さくなり、全ての半径位置においてほぼ０となる。したがって、基板処理装置１では、環状加熱部６１の内周側の空間への処理液のガスの入り込み、および、下面９２と環状加熱部６１の上面との間の空間への基板９の外周縁側からの当該ガスの入り込みが、抑制されていると考えられる。なお、基板処理装置１では、ガス噴出部７３から不活性ガスを噴出しない場合でも、下面９２の中央部よりも外側の領域におけるエッチング量が、比較例の基板処理装置８に比べて大幅に小さくなることが確認されている。 On the other hand, when the process of FIG. 3 is performed in the substrate processing apparatus 1 of FIG. 1, a point denoted by reference numeral D <b> 1 in FIG. 5 (in FIG. 5, the points D <b> 1 overlap each other, and therefore, the line is thick. ), The etching amount in the region outside the central portion of the lower surface 92 is significantly smaller than that of the substrate processing apparatus 8 of the comparative example, and becomes almost zero at all radial positions. Therefore, in the substrate processing apparatus 1, the gas of the processing liquid enters the space on the inner peripheral side of the annular heating unit 61, and the outer peripheral side of the substrate 9 in the space between the lower surface 92 and the upper surface of the annular heating unit 61. It is thought that the entry of the gas from is suppressed. In the substrate processing apparatus 1, even when the inert gas is not ejected from the gas ejection part 73, the etching amount in the region outside the central part of the lower surface 92 is significantly smaller than that of the substrate processing apparatus 8 of the comparative example. It has been confirmed that
　以上に説明したように、基板処理装置１では、水平状態の基板９の下面９２の中央部がスピンチャック２１により吸着保持される。また、スピンチャック２１の周囲を囲むとともに、上端が基板９の外周縁に近接する円筒状の防護周壁部７１０が設けられる。これにより、処理液から発生するガスの下面９２近傍への回り込みを抑制する、すなわち、当該ガスから基板９の下面９２を防護することができる。その結果、当該ガスが、基板９の下面９２上の薄膜に対してエッチングや変質等の悪影響を及ぼすことを抑制することができる。基板９がフープ等に収容された場合に、他の基板が変質することも防止することができる。また、防護周壁部７１０の下側開口がケーシング２３により閉塞されることにより、処理液のガスが下面９２近傍に回り込むことをさらに抑制することができる。 As described above, in the substrate processing apparatus 1, the central portion of the lower surface 92 of the substrate 9 in the horizontal state is sucked and held by the spin chuck 21. Further, a cylindrical protective peripheral wall 710 that surrounds the periphery of the spin chuck 21 and whose upper end is close to the outer peripheral edge of the substrate 9 is provided. Accordingly, it is possible to suppress the gas generated from the processing liquid from flowing into the vicinity of the lower surface 92, that is, to protect the lower surface 92 of the substrate 9 from the gas. As a result, the gas can suppress adverse effects such as etching and alteration on the thin film on the lower surface 92 of the substrate 9. When the board | substrate 9 is accommodated in a hoop etc., it can also prevent that another board | substrate changes in quality. Further, since the lower opening of the protective peripheral wall 710 is closed by the casing 23, it is possible to further suppress the gas of the processing liquid from flowing into the vicinity of the lower surface 92.
　基板処理装置１では、基板９の下面９２を加熱する環状加熱部６１が設けられ、環状加熱部６１の外周縁部６１０が、防護周壁部７１０の上端を含む部位を兼ねる。これにより、基板９を加熱して処理液による処理レートを向上しつつ、処理液のガスが下面９２近傍に回り込むことを抑制することが可能となる。 In the substrate processing apparatus 1, an annular heating unit 61 that heats the lower surface 92 of the substrate 9 is provided, and the outer peripheral edge 610 of the annular heating unit 61 also serves as a part including the upper end of the protective peripheral wall 710. Thereby, it becomes possible to suppress the gas of the processing liquid from flowing into the vicinity of the lower surface 92 while heating the substrate 9 to improve the processing rate by the processing liquid.
　基板処理装置１では、スピンチャック２１の周囲を囲む円筒状であり、上端が環状加熱部６１の内周縁部６１９に近接する内側周壁部７２がさらに設けられる。これにより、環状加熱部６１の内周側に処理液のガスが入り込み、基板９の下面９２と環状加熱部６１の上面との間の空間を通過することを抑制することができる。また、内側周壁部７２がスピンチャック２１と環状加熱部６１との間に配置され、不活性ガスを噴出するガス噴出部７３が、内側周壁部７２の上端に設けられる。これにより、環状加熱部６１の内周側の空間を埋めつつ、不活性ガスにより当該空間の圧力を高くして、処理液のガスが環状加熱部６１の内周側に入り込むことをさらに抑制することができる。 The substrate processing apparatus 1 is further provided with an inner peripheral wall portion 72 that has a cylindrical shape surrounding the spin chuck 21 and whose upper end is close to the inner peripheral edge portion 619 of the annular heating portion 61. Thereby, it is possible to suppress the gas of the processing liquid from entering the inner peripheral side of the annular heating unit 61 and passing through the space between the lower surface 92 of the substrate 9 and the upper surface of the annular heating unit 61. Further, the inner peripheral wall portion 72 is disposed between the spin chuck 21 and the annular heating portion 61, and a gas ejection portion 73 that ejects an inert gas is provided at the upper end of the inner peripheral wall portion 72. Thereby, while filling the space on the inner peripheral side of the annular heating unit 61, the pressure of the space is increased by the inert gas to further suppress the gas of the processing liquid from entering the inner peripheral side of the annular heating unit 61. be able to.
　ところで、環状加熱部６１では、温度を急激に上下させることが困難であるため、通常、基板９の有無にかかわらず、環状加熱部６１の温度を一定に保つ制御が行われる。基板処理装置１において、ガス噴出部７３を省略しつつ、環状加熱部６１における加熱ガスの噴出量を増大することも考えられるが、この場合、スピンチャック２１に基板９が保持された直後に、環状加熱部６１の温度が急激に上昇し、環状加熱部６１の温度が不安定となる。その結果、処理液による処理レート（例えば、エッチングレート）が不安定となる。したがって、環状加熱部６１を有する基板処理装置１において、安定して処理を行うには、環状加熱部６１における加熱ガスの噴出量を、環状加熱部６１の温度の変動が小さくなる最適値に設定し、不活性ガスを噴出するガス噴出部７３を別途設けることが好ましい。なお、環状加熱部６１の周囲が外側周壁部７１により囲まれる基板処理装置１では、外乱による環状加熱部６１の温度の変動を抑制することが可能となる。 By the way, in the annular heating part 61, since it is difficult to raise and lower the temperature rapidly, control for keeping the temperature of the annular heating part 61 constant is usually performed regardless of the presence or absence of the substrate 9. In the substrate processing apparatus 1, it is conceivable to increase the ejection amount of the heating gas in the annular heating unit 61 while omitting the gas ejection unit 73. In this case, immediately after the substrate 9 is held on the spin chuck 21, The temperature of the annular heating unit 61 rises rapidly, and the temperature of the annular heating unit 61 becomes unstable. As a result, the processing rate (for example, etching rate) by the processing liquid becomes unstable. Therefore, in order to perform processing stably in the substrate processing apparatus 1 having the annular heating unit 61, the ejection amount of the heating gas in the annular heating unit 61 is set to an optimum value that reduces the temperature variation of the annular heating unit 61. In addition, it is preferable to separately provide a gas ejection part 73 for ejecting an inert gas. Note that, in the substrate processing apparatus 1 in which the periphery of the annular heating unit 61 is surrounded by the outer peripheral wall portion 71, it is possible to suppress fluctuations in the temperature of the annular heating unit 61 due to disturbance.
　基板処理装置１において求められる基板９の処理レート（処理液による処理レート）によっては、環状加熱部６１が省略されてもよい。図６は、基板処理装置１の他の例を示す図である。図６の基板処理装置１では、図１の基板処理装置１と比較して、環状加熱部６１および内側周壁部７２が省略される。また、外側周壁部７１ａの上端が基板９の外周縁に近接し、ガス噴出部７３が中央突出部２３１の上面に取り付けられる。他の構成は、図１の基板処理装置１と同様であり、同じ構成に同じ符号を付している。 Depending on the processing rate of the substrate 9 required by the substrate processing apparatus 1 (processing rate by the processing liquid), the annular heating unit 61 may be omitted. FIG. 6 is a diagram illustrating another example of the substrate processing apparatus 1. In the substrate processing apparatus 1 of FIG. 6, the annular heating part 61 and the inner peripheral wall part 72 are omitted as compared with the substrate processing apparatus 1 of FIG. Further, the upper end of the outer peripheral wall portion 71 a is close to the outer peripheral edge of the substrate 9, and the gas ejection portion 73 is attached to the upper surface of the central projecting portion 231. Other configurations are the same as those of the substrate processing apparatus 1 of FIG. 1, and the same reference numerals are given to the same configurations.
　図６の基板処理装置１では、外側周壁部７１ａの上端面が、上下方向において基板９の外周縁に近接しつつ直接的に対向する。これにより、外側周壁部７１ａが、単体で防護周壁部となり、処理液から発生するガスの下面９２近傍への回り込みを抑制する。その結果、当該ガスが、基板９の下面９２に（および、フープ内で他の基板に）悪影響を及ぼすことを抑制することができる。また、不活性ガスを噴出するガス噴出部７３が、外側周壁部７１ａにより囲まれる空間の内部に設けられる。これにより、当該空間の圧力を高くして、処理液のガスが下面９２近傍に回り込むことをさらに抑制することができる。 In the substrate processing apparatus 1 of FIG. 6, the upper end surface of the outer peripheral wall portion 71a directly faces the outer peripheral edge of the substrate 9 in the vertical direction. As a result, the outer peripheral wall portion 71a alone becomes a protective peripheral wall portion, and suppresses the gas generated from the processing liquid from entering the vicinity of the lower surface 92. As a result, the gas can be prevented from adversely affecting the lower surface 92 of the substrate 9 (and other substrates in the hoop). Moreover, the gas ejection part 73 which ejects an inert gas is provided in the space enclosed by the outer peripheral wall part 71a. Thereby, the pressure of the space can be increased, and the gas of the processing liquid can be further suppressed from flowing around the lower surface 92.
　図７は、基板処理装置１のさらに他の例を示す図である。図７の基板処理装置１では、図１の環状加熱部６１、内側周壁部７２およびガス噴出部７３が省略され、厚さが大きい円筒状の外側周壁部７１ｂが用いられる。図７の基板処理装置１においても、外側周壁部７１ｂの上端が基板９の外周縁に近接する。これにより、外側周壁部７１ｂが、単体で防護周壁部となり、処理液から発生するガスの下面９２近傍への回り込みを抑制する。その結果、当該ガスが、基板９の下面９２に悪影響を及ぼすことを抑制することができる。また、外側周壁部７１ｂの上端がスピンチャック２１の外周縁にも近接する。図７の基板処理装置１では、基板９の下面９２の中央部から外側の領域に対する下側の空間を、外側周壁部７１ｂにより埋めることができ、当該下側の空間に多くの処理液のガスが入り込むことを、より確実に防止することができる。 FIG. 7 is a view showing still another example of the substrate processing apparatus 1. In the substrate processing apparatus 1 of FIG. 7, the annular heating part 61, the inner peripheral wall part 72, and the gas ejection part 73 of FIG. 1 are omitted, and a cylindrical outer peripheral wall part 71b having a large thickness is used. Also in the substrate processing apparatus 1 of FIG. 7, the upper end of the outer peripheral wall portion 71 b is close to the outer peripheral edge of the substrate 9. As a result, the outer peripheral wall portion 71b becomes a protective peripheral wall portion as a single unit, and suppresses the gas generated from the processing liquid from entering the vicinity of the lower surface 92. As a result, it is possible to suppress the gas from adversely affecting the lower surface 92 of the substrate 9. Further, the upper end of the outer peripheral wall portion 71 b is also close to the outer peripheral edge of the spin chuck 21. In the substrate processing apparatus 1 of FIG. 7, the lower space with respect to the outer region from the center portion of the lower surface 92 of the substrate 9 can be filled with the outer peripheral wall portion 71 b, and a large amount of gas of the processing liquid is filled in the lower space. Can be more reliably prevented from entering.
　上記基板処理装置１では様々な変形が可能である。 The substrate processing apparatus 1 can be variously modified.
　基板処理装置１において、防護周壁部７１０（または、防護周壁部である外側周壁部７１ａ，７１ｂ）の下側開口は必ずしも閉塞される必要はなく、処理液から発生するガスの下面９２近傍への回り込みが抑制可能であるならば、下側開口が部分的、または、全体的に開放されていてもよい。例えば、処理液を基板９に供給する際に、防護周壁部（外側周壁部７１，７１ａ，７１ｂ）の下端が、排気口３４１よりも下方に配置される図１、図６および図７の基板処理装置１では、下側開口が閉塞されていない場合でも、処理液のガスの下面９２近傍への回り込みがある程度抑制可能である。なお、排気口３４１は、カップ固定部３２に設けられてもよい。 In the substrate processing apparatus 1, the lower opening of the protective peripheral wall portion 710 (or the outer peripheral wall portions 71 a and 71 b, which are protective peripheral wall portions) does not necessarily need to be closed, and the gas generated from the processing liquid approaches the lower surface 92. If the wraparound can be suppressed, the lower opening may be partially or entirely opened. For example, when the processing liquid is supplied to the substrate 9, the lower end of the protective peripheral wall portion (outer peripheral wall portions 71, 71 a, 71 b) is disposed below the exhaust port 341. In the processing apparatus 1, even when the lower opening is not closed, it is possible to suppress the wraparound of the processing liquid gas to the vicinity of the lower surface 92 to some extent. The exhaust port 341 may be provided in the cup fixing portion 32.
　防護周壁部７１０（または、防護周壁部である外側周壁部７１ａ，７１ｂ）により、処理液から発生するガスの下面９２近傍への回り込みを低減する基板処理装置１では、必要に応じて内側周壁部７２およびガス噴出部７３が設けられるのみであってもよい。すなわち、図１の基板処理装置１において、内側周壁部７２およびガス噴出部７３が省略されてもよく、図６の基板処理装置１においてガス噴出部７３が省略されてもよい。 In the substrate processing apparatus 1 that reduces the wraparound of the gas generated from the processing liquid to the vicinity of the lower surface 92 by the protective peripheral wall portion 710 (or the outer peripheral wall portions 71a and 71b, which are protective peripheral wall portions), the inner peripheral wall portion is necessary. 72 and the gas ejection part 73 may only be provided. That is, in the substrate processing apparatus 1 in FIG. 1, the inner peripheral wall portion 72 and the gas ejection part 73 may be omitted, and in the substrate processing apparatus 1 in FIG. 6, the gas ejection part 73 may be omitted.
　図１の基板処理装置１において、環状加熱部６１の外周面の一部に、上下方向に延びる凹部が形成されてもよい。この場合でも、外側周壁部７１を有する基板処理装置１では、比較例の基板処理装置８に比べて、処理液から発生するガスの下面９２近傍への回り込みが低減されるため、当該ガスが基板９に悪影響を及ぼすことを抑制することが可能である。 In the substrate processing apparatus 1 of FIG. 1, a concave portion extending in the vertical direction may be formed in a part of the outer peripheral surface of the annular heating unit 61. Even in this case, in the substrate processing apparatus 1 having the outer peripheral wall portion 71, the gas generated from the processing liquid is less likely to enter the vicinity of the lower surface 92 than the substrate processing apparatus 8 of the comparative example. 9 can be adversely affected.
　処理液供給部４は、基板９の外周縁に対して、径方向の外側、または、下側から処理液を供給してもよい。また、処理液供給部４は、基板９の上面９１の中央部等に処理液を供給するものであってもよい。基板９の上面９１において周縁部よりも内側の領域を処理液から保護する上面ガス供給部５は、必要に応じて設けられればよい。 The processing liquid supply unit 4 may supply the processing liquid to the outer peripheral edge of the substrate 9 from the outer side or the lower side in the radial direction. Further, the processing liquid supply unit 4 may supply the processing liquid to the central portion of the upper surface 91 of the substrate 9 or the like. The upper surface gas supply unit 5 that protects the region inside the peripheral portion on the upper surface 91 of the substrate 9 from the processing liquid may be provided as necessary.
　基板９の下面９２を吸着保持する基板保持部は、真空チャックであるスピンチャック２１以外に、静電チャック等であってもよい。 The substrate holding portion that holds the lower surface 92 of the substrate 9 by suction may be an electrostatic chuck or the like in addition to the spin chuck 21 that is a vacuum chuck.
　基板処理装置１において処理が行われる基板は半導体基板には限定されず、ガラス基板や他の基板であってもよい。 The substrate to be processed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.
　上記実施の形態および各変形例における構成は、相互に矛盾しない限り適宜組み合わされてよい。 The configurations in the above embodiment and each modification may be combined as appropriate as long as they do not contradict each other.
　発明を詳細に描写して説明したが、既述の説明は例示的であって限定的なものではない。したがって、本発明の範囲を逸脱しない限り、多数の変形や態様が可能であるといえる。 Although the invention has been described in detail, the above description is illustrative and not restrictive. Therefore, it can be said that many modifications and embodiments are possible without departing from the scope of the present invention.
　１　　基板処理装置
　４　　処理液供給部
　９　　基板
　２１　　スピンチャック
　２２　　スピンモータ
　２３　　ケーシング
　６１　　環状加熱部
　７１，７１ａ，７１ｂ　　外側周壁部
　７２　　内側周壁部
　７３　　ガス噴出部
　９１　　（基板の）上面
　９２　　（基板の）下面
　３４１　　排気口
　６１０　　（環状加熱部の）外周縁部
　６１９　　（環状加熱部の）内周縁部
　７１０　　防護周壁部
　Ｊ１　　中心軸 DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 4 Process liquid supply part 9 Substrate 21 Spin chuck 22 Spin motor 23 Casing 61 Annular heating part 71, 71a, 71b Outer peripheral wall part 72 Inner peripheral wall part 73 Gas ejection part 91 (Substrate) upper surface 92 (Substrate) Lower surface 341 Exhaust port 610 Outer peripheral edge 619 (of the annular heating part) 619 Inner peripheral edge 710 (of the annular heating part) 710 Protective peripheral wall J1 Central axis

Claims (7)

  1. 　基板処理装置であって、
    　水平状態の基板の下面の中央部を吸着保持する基板保持部と、
    　上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、
    　前記基板の上面または外周縁に対して処理液を供給する処理液供給部と、
    　前記基板保持部の周囲を囲むとともに、上端が前記基板の前記外周縁に近接する円筒状であり、前記処理液から発生するガスの前記下面近傍への回り込みを抑制する防護周壁部と、
    を備える。     A substrate processing apparatus,
    A substrate holding part that sucks and holds the central part of the lower surface of the substrate in a horizontal state;
    A substrate rotation mechanism that rotates the substrate holding portion about a central axis that faces the vertical direction;
    A processing liquid supply unit for supplying a processing liquid to the upper surface or outer peripheral edge of the substrate;
    A protective peripheral wall portion that surrounds the periphery of the substrate holding portion and has an upper end that is a cylindrical shape that is close to the outer peripheral edge of the substrate, and that suppresses the gas generated from the processing liquid from entering the vicinity of the lower surface,
    Is provided.
  2. 　請求項１に記載の基板処理装置であって、
    　前記防護周壁部の下側開口を閉塞する閉塞部をさらに備える。     The substrate processing apparatus according to claim 1,
    It further includes a closing portion that closes the lower opening of the protective peripheral wall portion.
  3. 　請求項１または２に記載の基板処理装置であって、
    　前記基板保持部の周囲において前記基板の前記下面に近接し、前記下面を加熱する環状加熱部をさらに備え、
    　前記環状加熱部の外周縁部が、前記防護周壁部の前記上端を含む部位を兼ねる。     The substrate processing apparatus according to claim 1, wherein:
    An annular heating unit that heats the lower surface in proximity to the lower surface of the substrate around the substrate holding unit,
    An outer peripheral edge portion of the annular heating portion also serves as a portion including the upper end of the protective peripheral wall portion.
  4. 　請求項３に記載の基板処理装置であって、
    　前記基板保持部の周囲を囲む円筒状であり、上端が前記環状加熱部の内周縁部に近接する内側周壁部をさらに備える。     The substrate processing apparatus according to claim 3, wherein
    It further has a cylindrical shape surrounding the periphery of the substrate holding part, and further includes an inner peripheral wall part whose upper end is close to the inner peripheral edge part of the annular heating part.
  5. 　請求項４に記載の基板処理装置であって、
    　前記基板保持部と前記環状加熱部との間に配置される前記内側周壁部の上端に設けられ、不活性ガスを噴出するガス噴出部をさらに備える。     The substrate processing apparatus according to claim 4,
    A gas ejection part that is provided at an upper end of the inner peripheral wall part disposed between the substrate holding part and the annular heating part and ejects an inert gas is further provided.
  6. 　請求項１ないし４のいずれか１つに記載の基板処理装置であって、
    　前記防護周壁部に囲まれる空間の内部に、不活性ガスを噴出するガス噴出部をさらに備える。     The substrate processing apparatus according to claim 1, wherein
    A gas ejection part for ejecting an inert gas is further provided inside the space surrounded by the protective peripheral wall part.
  7. 　請求項１ないし６のいずれか１つに記載の基板処理装置であって、
    　前記防護周壁部の外側に配置され、前記防護周壁部の周囲のガスを排気する排気口をさらに備え、
    　前記処理液を前記基板に供給する際に、前記防護周壁部の下端が、前記排気口よりも下方に配置される。     A substrate processing apparatus according to any one of claims 1 to 6,
    An exhaust port that is disposed outside the protective peripheral wall portion and exhausts gas around the protective peripheral wall portion;
    When supplying the processing liquid to the substrate, a lower end of the protective peripheral wall portion is disposed below the exhaust port.
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