WO2019218752A1 - 纹路识别组件及其制备方法、显示装置 - Google Patents

纹路识别组件及其制备方法、显示装置 Download PDF

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Publication number
WO2019218752A1
WO2019218752A1 PCT/CN2019/076558 CN2019076558W WO2019218752A1 WO 2019218752 A1 WO2019218752 A1 WO 2019218752A1 CN 2019076558 W CN2019076558 W CN 2019076558W WO 2019218752 A1 WO2019218752 A1 WO 2019218752A1
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layer
film layer
filter film
light transmissive
filter
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PCT/CN2019/076558
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English (en)
French (fr)
Inventor
海晓泉
王海生
王雷
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京东方科技集团股份有限公司
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Priority to US16/607,251 priority Critical patent/US11075240B2/en
Publication of WO2019218752A1 publication Critical patent/WO2019218752A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a texture recognition component, a preparation method thereof, and a display device.
  • Fingerprint recognition is to identify the feature points of different fingerprints.
  • the fingerprint recognition is mainly implemented in three types: capacitive, optical and ultrasonic.
  • the photosensitive sensor receives the scattered light and causes the image acquired by the photosensitive sensor.
  • the ambiguous problem which in turn leads to inaccurate fingerprint information recognized by the light received by the photosensor.
  • some embodiments of the present disclosure provide a texture recognition component including a photosensitive sensing layer, a grain contact layer, and a filter film layer disposed on a side of the photosensitive sensing layer adjacent to the grain contact layer.
  • the filter film layer is configured to filter visible light having a wavelength greater than or equal to ⁇ ; wherein the ⁇ has a value range greater than or equal to 600 nm.
  • a first light transmissive layer and a second light transmissive layer are respectively disposed on two sides of the filter film layer, and the first light transmissive layer and the second light transmissive layer are The filter film layer is in contact.
  • the filter film layer includes K filter film groups stacked in a stack, wherein K is a positive integer greater than or equal to 1.
  • K is a positive integer greater than or equal to 1.
  • Each of the K filter film groups includes two first film layers disposed opposite to each other, and a second film layer disposed between the two first film layers.
  • the refractive index of the second film layer is greater than the refractive index of the first film layer.
  • the thickness of the first film layer is The thickness of the second film layer is The value of K is according to the formula determine.
  • T is a transmittance of visible light having a wavelength greater than or equal to ⁇ in the filter film layer, and T is less than a transmittance of visible light having a wavelength greater than or equal to ⁇ in the filter film layer Threshold.
  • the n 1 is a refractive index of the first light transmissive layer
  • the n 2 is a refractive index of the second light transmissive layer
  • the n g is a refractive index of the second film layer
  • the n d is the refractive index of the first film layer.
  • the visible light having a wavelength greater than or equal to ⁇ has a transmittance threshold of less than or equal to 3% in the filter film layer.
  • the material of the first film layer comprises one of SiO or SiO 2 .
  • the material of the second film layer includes one of TiO 2 or Ge.
  • the first light transmissive layer includes a base substrate
  • the second light transmissive layer includes an optically clear adhesive layer or a buffer layer.
  • the texture recognition component further includes a substrate disposed on a side of the filter film layer adjacent to the grain contact layer.
  • the first light transmissive layer includes an optical layer or an encapsulation layer
  • the second light transmissive layer includes an optically transparent adhesive layer.
  • the texture recognition component further includes an optical layer disposed on a side of the photosensitive sensing layer adjacent to the grain contact layer; the optical layer includes a plurality of light transmission holes.
  • the photosensitive sensing layer includes a plurality of photosensitive sensing units, and each of the plurality of photosensitive sensing units corresponds to a light transmitting hole.
  • the photosensitive sensing layer includes a first electrode layer, a photosensitive material layer, and a second electrode layer disposed in sequence along the photosensitive sensing layer in a direction close to the filter film layer.
  • some embodiments of the present disclosure provide a display device including a light emitting layer, further comprising the texture identifying component described above.
  • the filter film layer in the texture recognition component is disposed on a side of the light-emitting layer away from the grain contact layer in the texture recognition component.
  • the display device includes an OLED display panel, the OLED display panel includes an array substrate, and the array substrate includes a substrate.
  • the texture recognition component includes a substrate that is a substrate of the array substrate.
  • some embodiments of the present disclosure provide a method of fabricating a texture recognition component, comprising: forming a photosensitive sensing layer, forming a filter film layer, and forming a grain contact layer.
  • the filter film layer is located between the photosensitive sensing layer and the grain contact layer, and the filter film layer is configured to filter visible light having a wavelength greater than or equal to ⁇ .
  • the value range of ⁇ is greater than or equal to 600 nm.
  • forming the filter film layer further includes: forming a first light transmissive layer and a second light transmissive layer on both sides of the filter film layer, respectively.
  • the first light transmissive layer and the second light transmissive layer are respectively in contact with the filter film layer.
  • forming the filter film layer comprises: sequentially forming K filter film groups, and K filter film groups are stacked, wherein K is a positive integer greater than or equal to 1.
  • forming each of the filter film groups of the K filter film groups includes: sequentially forming a first film layer, a second film layer, and a first film layer.
  • the refractive index of the second film layer is greater than the refractive index of the first film layer.
  • the thickness of the first film layer is The thickness of the second film layer is The value of K is according to the formula determine.
  • T is a transmittance of visible light having a wavelength greater than or equal to ⁇ in the filter film layer, and T is less than a transmittance of visible light having a wavelength greater than or equal to ⁇ in the filter film layer Threshold.
  • the n 1 is a refractive index of the first light transmissive layer
  • the n 2 is a refractive index of the second light transmissive layer
  • the n g is a refractive index of the second film layer
  • the n d is the refractive index of the first film layer.
  • the first light transmissive layer comprises a substrate substrate.
  • the filter film layer and the second light transmissive layer are sequentially formed on a side of the base substrate adjacent to the grain contact layer; wherein the second light transmissive layer includes a buffer layer.
  • the filter film layer and the second light transmissive layer are sequentially formed on a side of the base substrate adjacent to the photosensitive sensing layer; wherein the second light transmissive layer comprises an optically transparent adhesive layer.
  • forming the grain contact layer further includes: forming a substrate substrate, and forming a grain contact layer on a side of the substrate substrate away from the filter film layer.
  • the first light transmissive layer, the filter film layer and the second light transmissive layer are sequentially formed on a side of the base substrate away from the grain contact layer.
  • the first light transmissive layer, the filter film layer and the second light transmissive layer are sequentially formed on a side of the photosensitive sensing layer close to the substrate substrate.
  • the first light transmissive layer includes an optical layer or an encapsulation layer
  • the second light transmissive layer includes an optically transparent adhesive layer.
  • the method for fabricating the texture recognition component further includes: forming an optical layer on a side of the photosensitive sensing layer adjacent to the grain contact layer; the optical layer includes a plurality of light transmission holes.
  • Forming the photosensitive sensing layer includes: forming a plurality of photosensitive sensing units, each of the plurality of photosensitive sensing units corresponding to a light transmitting hole.
  • forming the photosensitive sensing layer includes sequentially forming a first electrode layer, a photosensitive material layer, and a second electrode layer.
  • FIG. 1 is a schematic structural view of a display device in the related art
  • FIG. 2a is a schematic illustration of light passing through a finger to a photosensitive sensing layer, in accordance with some embodiments of the present disclosure
  • 2b is a spectrogram of light rays that are incident on a photosensitive sensing layer through a finger, in accordance with some embodiments of the present disclosure
  • FIG. 3 is a schematic structural diagram of a texture recognition component according to some embodiments of the present disclosure.
  • FIG. 4 is a spectrogram of light rays that are incident on a photosensitive sensing layer through a finger, in accordance with some embodiments of the present disclosure
  • FIG. 5 is a schematic structural diagram of another texture recognition component according to some embodiments of the present disclosure.
  • FIG. 6a is a block diagram showing another texture recognition component in accordance with some embodiments of the present disclosure.
  • 6b is a block diagram of another texture recognition component in accordance with some embodiments of the present disclosure.
  • FIG. 7a is a block diagram showing another texture recognition component in accordance with some embodiments of the present disclosure.
  • FIG. 7b is a block diagram showing another texture recognition component in accordance with some embodiments of the present disclosure.
  • FIG. 8a is a schematic structural diagram of another texture recognition component according to some embodiments of the present disclosure.
  • FIG. 8b is a schematic structural diagram of another texture recognition component according to some embodiments of the present disclosure.
  • 9a is a schematic structural diagram of another texture recognition component according to some embodiments of the present disclosure.
  • 9b is a block diagram showing another texture recognition component in accordance with some embodiments of the present disclosure.
  • FIG. 10 is a schematic structural diagram of a display device according to some embodiments of the present disclosure.
  • a plurality refers to two or more than two unless otherwise stated; "and/or” is merely an association describing an associated object, representing three relationships, for example, A And / or B, expressed as: A exists separately, there are A and B, there are three cases of B alone.
  • first and second are distinctions between identical or similar items having substantially the same function and effect, and those skilled in the art understand that “first” and “second” do not perform the quantity and execution order. The definition is not limited to a certain difference.
  • the related art uses through-hole filtering to filter the light scattered by the finger reflection to obtain more accurate fingerprint information.
  • the accuracy of fingerprint recognition is still affected by the interference light.
  • FIG. 2a after the ambient light is irradiated onto the finger, it will penetrate the finger to the photosensitive sensor 10 to constitute the interference light for fingerprint recognition. Although the ambient light passes through the finger, the light changes in the biological tissue in the finger.
  • the main light in the ambient light that is irradiated onto the photosensitive sensor 10 through the finger is the main light.
  • the long wavelength band of the wavelength band above 600 nm cannot be filtered by the through-hole filtering method, so the light in the band range still affects the accuracy of fingerprint recognition.
  • Some embodiments of the present disclosure provide a texture recognition component, as shown in FIG. 3, including a photosensitive sensing layer 20, a grain contact layer 40, and a filter layer disposed on a side of the photosensitive sensing layer 20 adjacent to the grain contact layer 40. 30.
  • the filter film layer 30 is configured to filter visible light having a wavelength greater than or equal to ⁇ .
  • the wavelength ⁇ has a value range greater than or equal to 600 nm.
  • the principle of the texture recognition component for the texture recognition is: after the light hits the textured object (for example, a fingerprint), the trough (hereinafter referred to as a valley) and the peak (hereinafter referred to as a ridge) of the object to be tested are passed.
  • the textured object for example, a fingerprint
  • the trough hereinafter referred to as a valley
  • the peak hereinafter referred to as a ridge
  • the photosensitive sensing layer 20 performs texture recognition based on the difference in received light energy.
  • the texture recognition component is configured to recognize the touched object such as a fingerprint and a palm print, which is not limited in some embodiments of the present disclosure.
  • the following examples are used for identifying fingerprints or fingerprint recognition as an example.
  • the texture contact layer 40 when the user performs fingerprint recognition, the texture contact layer 40 is in direct contact with the user's finger.
  • the surface of the texture contact layer 40 that is in direct contact with the user's finger is the grain contact surface F.
  • the grain contact surface F of the grain contact layer 40 refers to a surface of the display device that is in direct contact with the finger when the user performs fingerprint recognition.
  • the texture contact layer 40 is, for example, a texture recognition component or a cover plate on the outermost side of the display device.
  • the grain contact surface F is, for example, a surface of the cover plate as the grain contact layer 40 away from the side of the photosensitive sensing layer 20.
  • the cover is for example glass.
  • the filter film layer 30 is used to filter visible light having a wavelength greater than or equal to ⁇ , which means that the filter film layer 30 can reduce the transmittance of visible light having a wavelength greater than or equal to ⁇ .
  • the specific transmittance of visible light having a wavelength greater than or equal to ⁇ is related to the specific structure of the filter film layer 30 and the number of layers.
  • the transmittance of light of different wavelengths after filtering the photo film layer 30 is as shown in FIG. 4 .
  • the texture recognizing component itself includes a plurality of film layers, and the plurality of film layers in the texture recognizing component have a certain transmittance even if it is a light transmissive material, even the light that is incident from the finger to the photosensitive sensing layer 20 is even
  • the light transmittance from the finger to the photosensitive sensing layer 20 is 80% in the case where the light does not pass through the filter film layer 30. In the case where the light passes through the filter film layer 30, as shown in FIG.
  • the light having a wavelength of less than 600 nm is less affected by the filter layer 30, and the transmittance is still close to 80%, and the wavelength is greater than or equal to 600 nm.
  • the transmittance of visible light is reduced from 80% to about 1%.
  • some embodiments of the present disclosure do not define the value of ⁇ as long as the value of ⁇ is above 600 nm (including 600 nm) and is in the visible range.
  • ⁇ is a value of 600 nm, 650 nm, 700 nm, 750 nm, or 800 nm.
  • the main band of light that is incident on the photosensor 10 through the finger in ambient light is light of a long band of 600 nm or more, and therefore, in some embodiments of the present disclosure, ⁇ Take the value of 600nm.
  • ⁇ Take the value of 600nm.
  • some embodiments of the present disclosure do not limit the specific structure of the filter film layer 30 as long as the filter film layer 30 can filter visible light having a wavelength greater than or equal to ⁇ .
  • the photosensitive sensing layer 20 includes a plurality of photosensitive sensing units 21, each of which is configured to be associated with texture information.
  • the optical signal is converted into an electrical signal.
  • the photosensitive sensing unit 21 is, for example, a photosensor, a photosensor, or the like.
  • some embodiments of the present disclosure do not define the arrangement manner of the plurality of photosensitive sensing units 21 in the photosensitive sensing layer 20, and the setting positions thereof are satisfied as long as the finger touches the grain contact surface F of the grain contact layer 40. Fingerprint recognition is available at any location. Moreover, when the texture recognition component is applied to the display device, the area occupied by the plurality of photosensitive sensing units 21 does not affect the normal display of the display device.
  • the plurality of photosensitive sensing units 21 are arranged, for example, in a matrix, and are, for example, arranged in a row-by-row staggered manner.
  • Some embodiments of the present disclosure provide a texture recognition component that can filter visible light having a wavelength greater than or equal to ⁇ by the filter film layer 30 by providing the filter film layer 30 on the side of the photosensitive sensing layer 20 near the grain contact layer 40.
  • a texture recognition component that can filter visible light having a wavelength greater than or equal to ⁇ by the filter film layer 30 by providing the filter film layer 30 on the side of the photosensitive sensing layer 20 near the grain contact layer 40.
  • the main band of the light that is incident on the photosensitive sensing layer 20 through the finger in the ambient light is a long wavelength band having a wavelength of 600 nm or more, by setting the ⁇ to be greater than or equal to 600 nm, the ambient light can be effectively filtered through the finger.
  • the light incident on the photosensitive sensing layer 20 improves the accuracy of fingerprint recognition.
  • the photosensitive sensing layer 20 is disposed away from the side of the grain contact layer 40, that is, the side of the photosensitive sensing layer 20 away from the grain contact layer 40 is provided with a light shielding layer, which can avoid the photosensitive sensing.
  • the light of the layer 20 away from the side of the grain contact layer 40 enters the photosensitive sensing layer 20 and affects the accuracy of fingerprint recognition.
  • the first transparent layer 50 and the second transparent layer 60 are respectively disposed on two sides of the filter film layer 30, and the first transparent layer 50 and the second transparent layer The light layer 60 is in contact with the filter film layer 30.
  • the filter film layer 30 includes K filter film groups 31 arranged in a stack, wherein K is a positive integer greater than or equal to 1.
  • K is a positive integer greater than or equal to 1.
  • Each of the K filter film groups 31 includes two first film layers 311 disposed opposite to each other, and a second film layer 312 disposed between the two first film layers 311.
  • the refractive index of the second film layer 312 is greater than the refractive index of the first film layer 311.
  • the thickness of the first film layer 311 is The thickness of the second film layer 312 is
  • the value of K is according to the formula determine.
  • T is a transmittance of visible light having a wavelength greater than or equal to ⁇ in the filter film layer 30, and T is less than a transmittance threshold of visible light having a wavelength greater than or equal to ⁇ in the filter film layer 30.
  • the n 1 is the refractive index of the first light transmissive layer 50
  • the n 2 is the refractive index of the second light transmissive layer 60
  • n g is the refractive index of the second film layer 312
  • n d is the first film layer 311 Refractive index.
  • the first light transmissive layer 50 and the second light transmissive layer 60 are respectively disposed on two sides of the filter film layer 30, which means that light is separately disposed on both sides of the filter film layer 30.
  • the first light transmissive layer 50 may be the first light transmissive layer 50. For example, as shown in FIG.
  • the first light transmissive layer 50 is disposed on the side of the filter film layer 30 adjacent to the photosensitive sensing layer 20, and the second light transmissive layer 60 is disposed on the filter film layer 30 away from the photosensitive sensing layer 20. side.
  • the first light transmissive layer 50 is disposed on a side of the filter film layer 30 away from the photosensitive sensing layer 20
  • the second light transmissive layer 60 is disposed on a side of the filter film layer 30 adjacent to the photosensor layer 20.
  • the first film layer 311 of the different filter film group 31 is made of a whole material, or may be formed by using different materials.
  • the second film layer 312 of the different filter film group 31 is formed by the same material, or can be formed by using different materials. That is to say, the filter film layer 30 may be composed of K filter film groups 31 having the same or different filter effects.
  • Some embodiments of the present disclosure do not define the materials of the first film layer 311 and the second film layer 312 in each of the filter film groups 31 as long as the refractive index of the second film layer 312 of each of the filter film groups 31 is greater than The refractive index of the first film layer 311 of one filter film group 31 may be sufficient.
  • the difference in refractive index between the first film layer 311 and the second film layer 312 is relatively large, and the material of the thin film layer is easily formed by a simple process.
  • the material of the first film layer 311 and the second film layer 312 the transmittance of visible light having a wavelength greater than or equal to ⁇ in the filter film layer 30 is lower.
  • the material of the first film layer 311 is, for example, one of SiO or SiO 2
  • the material of the second film layer 312 is, for example, one of TiO 2 or Ge.
  • the refractive index of SiO 2 is 1.44
  • the refractive index of SiO is 1.8
  • the refractive index of TiO 2 is 2.12
  • the refractive index of Ge is 4.0.
  • the first film layer 311 and the second film layer 312 are formed by a coating or plating process.
  • the coating process is, for example, a normal temperature coating process, and is, for example, a high temperature coating process.
  • the room temperature coating process is, for example, an Ion Assisted Deposition (IAD) process.
  • the filter film layer 30 includes K filter film groups 31 stacked in a stack, wherein when K>1, the plurality of filter film groups 31 are stacked along the direction in which the photosensitive sensing layer 20 is directed to the grain contact layer 40. .
  • K represents the number of the filter film groups 31, K should be an integer.
  • the formula The calculated K value is determined. 5 shows a structural view of the filter film layer 30 when K is equal to 3, but the number of the filter film groups 31 in some embodiments of the present disclosure is not limited thereto, and the number K of the filter film groups 31 is also, for example. It is 2, 4, 5, 6, 8, 10, etc.
  • the process of preparing the filter film layer 30 is: sequentially forming the first film layer 311, the second film layer 312, the first film layer 311, the first film layer 311, the second film layer 312, and the first A film layer 311, a first film layer 311, a second film layer 312, and a first film layer 311.
  • the embodiment of the present disclosure can filter the visible light greater than or equal to ⁇ by the filter film layer 30, it can be shot from the finger without filtering the photo film layer 30.
  • the transmittance of visible light greater than or equal to ⁇ on the photosensitive sensing layer 20 in the filter film layer is necessarily greater than the transmittance threshold of visible light having the wavelength greater than or equal to ⁇ in the filter film layer.
  • the transmittance threshold of the visible light having a wavelength greater than or equal to ⁇ in the filter film layer is related not only to the light transmittance of the filter film layer 30 and other light transmissive film layers in the texture recognition component. It is also related to the performance of the photosensitive sensing unit 21 in the photosensitive sensing layer 20.
  • the visible light having a wavelength greater than or equal to ⁇ has a transmittance threshold of less than 3% in the filter layer.
  • the transmittance of the visible light having a wavelength greater than or equal to ⁇ in the filter film layer is less than or equal to 1%, and at this time, it may be considered that the visible light from the finger to the photosensitive sensing layer 20 is greater than or equal to ⁇ .
  • the transmittance of light is almost zero and can be ignored to maximize the accuracy of fingerprint recognition.
  • Some embodiments of the present disclosure employ a suitable material such that the refractive index of the second film layer 312 is greater than the refractive index of the first film layer 311, and the transmittance of the visible light having a wavelength greater than or equal to ⁇ is less than that in the filter film layer 30.
  • the calculated K value determines the number of the filter film groups 31, thereby obtaining the specific structure of the filter film layer 30.
  • the structure of the filter film layer 30 is simple and easy to form.
  • the texture identifying component further includes an optical layer 70 disposed on a side of the photosensitive sensing layer 20 adjacent to the grain contact layer 40; the optical layer 70 includes a plurality of Each of the photosensitive sensing units 21 in the photosensitive sensing layer 20 corresponds to a light transmission hole.
  • the plurality of light transmission holes of the optical layer 70 are light transmissive areas, and the surrounding area of each of the light transmission holes in the optical layer 70 is an opaque area.
  • the optical layer 70 including a plurality of light-transmissive holes can adopt the principle of small-hole imaging to solve the problem of image blurring of the photosensitive sensing layer 20 due to light mixing.
  • the optical layer 70 including a plurality of light-transmissive holes is, for example, a collimator to avoid a large angle of light between the finger and the grain contact layer 40 (in a direction perpendicular to the direction of the optical layer 70, The larger the angle between the lines, the greater the angle of the light rays are incident on the photosensitive sensing layer 20, or the large angle light in the light reflected by the fingers is prevented from hitting the photosensitive sensing layer 20 to improve fingerprint recognition. The accuracy.
  • some embodiments of the present disclosure do not define the relative positions of the filter film layer 30 and the optical layer 70 as long as the filter film layer 30 and the optical layer 70 are disposed on the photosensitive sensing layer 20 near the grain contact layer 40.
  • One side can be.
  • the optical layer 70 is disposed on the side of the filter film layer 30 adjacent to the photosensitive sensing layer 20.
  • the optical layer 70 is disposed on a side of the filter film layer 30 away from the photosensitive sensing layer 20.
  • the filter film layer 30 and the optical layer 70 are, for example, in direct contact, and are, for example, disposed apart from other film layers.
  • Figures 6a and 6b only show the structure of the texture recognition component when the filter film layer 30 and the optical layer 70 are in direct contact.
  • the optical layer 70 when the optical layer 70 is in direct contact with the filter film layer 30, the optical layer 70 may be multiplexed into other film layers in the texture recognition component, for example, the optical layer 70. It is multiplexed into the first light transmissive layer 50 or the second light transmissive layer 60. That is, the first light transmissive layer 50 or the second light transmissive layer 60 is the optical layer 70.
  • the optical layer 70 is disposed on a side of the photosensitive sensing layer 20 adjacent to the grain contact layer 40, utilizing the opaque region of the optical layer 70 for stray light and a large angle incident on the optical layer 70.
  • the occlusion of the light can reduce the interference of the light required when the photosensitive sensing layer 20 recognizes the fingerprint, so as to improve the accuracy of fingerprint recognition.
  • the texture recognition component includes a substrate substrate 80, wherein the substrate substrate 80 may be disposed either as the first light transmissive layer 50 or as a film layer in the texture recognition component. .
  • the texture recognition component further includes a filter layer 30.
  • the substrate substrate 80 is on the side of the grain contact layer 40.
  • the first light transmissive layer 50 is an optical layer 70
  • the second light transmissive layer 60 is an optical transparent adhesive layer 90 .
  • the optical layer 70 serves as the first light transmissive layer 50 in the texture identifying component.
  • the filter film layer 30 is disposed on the side of the optical layer 70 near the photosensitive sensing layer 20; or, as shown in FIG. 7b, the filter film layer 30 is disposed on the optical Layer 70 is remote from the side of photosensitive sensing layer 20.
  • the filter film layer 30 when the filter film layer 30 is disposed on the side of the optical layer 70 away from the photosensitive sensing layer 20, the optical layer 70 is directly formed on the photosensitive sensing layer 20, or the optical layer 70 Adhered to the photosensitive sensing layer 20. Thereafter, the filter film layer 30 is directly formed and fixed on the optical layer 70. Finally, the optically clear adhesive layer 90 is used to bond the filter film layer 30 away from the optical layer 70 side to the other film layers in the texture recognition component.
  • the filter film layer 30 can be formed by the optical transparent adhesive layer 90. The side away from the optical layer 70 is bonded to the base substrate 80.
  • the material of the optically clear adhesive layer 90 is, for example, Optically Clear Adhesive (OCA).
  • OCA Optically Clear Adhesive
  • the plurality of light-transmissive holes in the optical layer 70 are through holes, or a light-transmitting material is disposed in the light-transmitting holes.
  • the material of the portion of the optical layer 70 where the light transmission hole is located is a light transmissive material
  • the material of the optical layer 70 other than the light transmission hole is an opaque material. Since the filter film layer 30 is directly formed and fixed on the optical layer 70 and directly in contact with the optical layer 70, a light-transmitting material is disposed in the light-transmitting hole, so that the position of the light-transmitting hole of the optical layer 70 can be avoided.
  • the force of the filter layer 30 at the position of the through hole is unbalanced with the force of the filter layer 30 at other positions, so that the through hole affects the structure of the filter layer 30, and further The filter effect of the filter film layer 30 is affected.
  • the filter film layer 30 may be directly formed and fixed on the optical layer 70, and the preparation method is simple. Moreover, since the filter film layer 30 is directly formed and fixed on the optical layer 70, in the process of preparing the filter film layer 30, even if a high temperature coating process is employed, the other layers in the texture recognition component are not recognized. The structure and performance of the (for example, photosensitive sensing layer) are affected.
  • the texture recognition component further includes a filter layer disposed 30 is adjacent to the substrate substrate 80 on the side of the grain contact layer 40.
  • the first light transmissive layer 50 is a thin film encapsulation (TFE) 100
  • the second light transmissive layer 60 is an optical transparent adhesive layer 90.
  • the filter film layer 30 is disposed on the side of the encapsulation layer 100 adjacent to the photosensitive sensing layer 20; or, as shown in FIG. 8b, the filter film layer 30 is disposed away from the encapsulation layer 100.
  • the filter film layer 30 is disposed on the side of the encapsulation layer 100 adjacent to the photosensitive sensing layer 20; or, as shown in FIG. 8b, the filter film layer 30 is disposed away from the encapsulation layer 100.
  • the encapsulation layer 100 is first formed on the substrate, for example, may be formed on the substrate substrate 80.
  • Encapsulation layer 100 is configured to package the substrate substrate 80. If the base substrate 80 is an OLED substrate, the encapsulation layer 100 can protect the OLED device in the OLED substrate from air, moisture, and the like.
  • the filter film layer 30 is directly formed and fixed on the encapsulation layer 100.
  • the optically clear adhesive layer 90 is used to bond the filter film layer 30 away from the surface of the encapsulating layer 100 and the surface of the photosensitive sensing layer 20 adjacent to the filter film layer 30.
  • the encapsulation layer 100 of the package substrate substrate 80 is further configured to encapsulate the photosensitive sensing layer 20, the encapsulation layer 100 has a protective effect on the photosensitive sensing layer 20, that is, the encapsulation layer 100 and the photosensitive transmission
  • the optical transparent adhesive layer 90 can be coated on the side of the photosensitive sensing layer 20 close to the encapsulating layer 100, and then the optical filter layer 30 is separated from the surface of the encapsulating layer 100 by the optical transparent adhesive layer 90.
  • the surface of the photosensitive sensing layer 20 is close to the surface of the filter film layer 30, thereby ensuring that the encapsulating layer 100 can protect the photosensitive sensing layer 20.
  • the encapsulation layer 100 is first formed on the photosensitive sensing layer 20.
  • the encapsulation layer 100 is configured to encapsulate the photosensitive sensing layer 20 to protect the photosensitive sensing layer 20 from air, moisture, and the like.
  • the filter film layer 30 is directly formed and fixed on the encapsulation layer 100.
  • the optically clear adhesive layer 90 is used to bond the filter film layer 30 away from the other side of the texture recognition component to the other of the texture recognition components.
  • the optical filter layer 30 is used to separate the filter film layer 30.
  • One side of the encapsulation layer 100 is bonded to the base substrate 80.
  • the material of the optical transparent adhesive layer 90 is, for example, OCA.
  • the manufacturing method of directly forming and fixing the filter film layer 30 on the encapsulation layer 100 is simple in preparation. Moreover, since the filter film layer 30 is directly formed and fixed on the encapsulation layer 100, in the process of preparing the filter film layer 30, even if a high-temperature coating process is employed, the other layers in the texture recognition component are not recognized. The structure and performance of the (for example, photosensitive sensing layer) are affected.
  • the first light transmissive layer 50 is the base substrate 80
  • the second light transmissive Layer 60 is an optically clear adhesive layer 90 or a buffer layer 210.
  • the filter film layer 30 is disposed on a side of the base substrate 80 away from the photosensitive sensing layer 20; or, as shown in FIG. 9b, the filter film layer 30 is disposed on the base substrate. 80 is adjacent to one side of the photosensitive sensing layer 20.
  • the filter film layer 30 when the filter film layer 30 is disposed on the side of the base substrate 80 away from the photosensitive sensing layer 20, the filter film layer 30 is directly formed and fixed on the base substrate 80. Thereafter, the buffer layer 210 is formed on the side of the filter film layer 30 away from the base substrate 80.
  • the filter film layer 30 when the filter film layer 30 is disposed on the side of the base substrate 80 close to the photosensitive sensing layer 20, the filter film layer 30 is directly formed and fixed on the base substrate 80. Thereafter, the side of the filter film layer 30 away from the substrate substrate 80 is bonded to the other film layers in the texture recognition component by the optically transparent adhesive layer 90, for example, the filter layer is formed by the optically transparent adhesive layer 90. 30 is bonded to the photosensitive sensing layer 20 or the optical layer 70 from the side away from the substrate substrate 80.
  • the optical layer 70 or other film layers in the texture recognition component may be directly formed on the side of the filter film layer 30 away from the substrate substrate 80.
  • the optical transparent adhesive layer 90 can be OCA.
  • the manufacturing method of directly forming and fixing the filter film layer 30 on the base substrate 80 is simple in the preparation method. Moreover, since the filter film layer 30 is directly formed and fixed on the base substrate 80, in the process of preparing the filter film layer 30, even if a high-temperature coating process is employed, no other film in the texture recognition component is recognized. The structure and properties of the layers, such as the photosensitive sensing layer, are affected.
  • the photosensitive sensing layer 20 includes a first electrode layer 201, a photosensitive material layer 202, and a second electrode layer 203 which are sequentially disposed.
  • the material of the first electrode layer 201 is, for example, a transparent conductive material such as indium tin oxide (ITO).
  • the structures of the first electrode layer 201 and the second electrode layer 203 may be various.
  • the first electrode layer 201 includes a plurality of first electrodes.
  • the projection of each of the first electrodes on the grain contact layer 40 has an overlapping area with the second electrode layer 203.
  • the first electrode layer 201 includes a plurality of first electrodes
  • the second electrode layer 203 includes a plurality of second electrodes.
  • the projection of a first electrode on the grain contact layer 40 has an overlap with the projection of a second electrode on the grain contact layer 40.
  • the second electrode layer 203 includes a plurality of second electrodes.
  • the projection of each of the second electrodes on the grain contact layer 40 has an overlapping area with the first electrode layer 201.
  • the texture recognition component further includes a thin film transistor including a gate, a gate insulating layer, an active layer, a source and a drain, and a drain of the thin film transistor and a first of the photosensitive sensing layer 20
  • the electrode layer 201 is electrically connected.
  • the thin film transistor can be used as a switch to control the photosensitive sensing layer 20 to transmit an electrical signal related to the texture information to a controller in the texture identifying component, the controller implementing the texture recognition based on the received electrical signal.
  • Some embodiments of the present disclosure provide a display device, as shown in FIG. 10, including a light emitting layer 220, and further comprising the texture identifying component of any of the above embodiments.
  • the filter film layer 30 in the texture recognition component is disposed on a side of the light-emitting layer 220 away from the grain contact layer 40.
  • the grain contact surface F in the grain contact layer 40 is the surface closest to the display side in the display device 200.
  • the display device 200 may be a display panel or a display including a display panel.
  • the display panel may be an OLED display panel, or may be a liquid crystal display panel (LCD).
  • LCD liquid crystal display panel
  • the light emitting layer 220 of the display device 200 is an OLED light emitting device, and the OLED light emitting device includes a cathode, an anode, and a light emitting function layer disposed between the cathode and the anode.
  • the light emitting layer 220 of the display device 200 is a backlight.
  • some embodiments of the present disclosure do not define the positions of the photosensitive sensing layer 20 and the filter film layer 30 as long as the filter film layer 30 is disposed on the side of the light-emitting layer 220 of the display device 200 away from the grain contact layer 40, and The photosensitive sensing layer 20 may be disposed on the side of the filter film layer 30 away from the grain contact layer 40.
  • the photosensitive sensing layer 20 and the filter film layer 30 are both disposed in the display panel, and the photosensitive sensing layer 20 and the filter film layer 30 are located on the side of the light emitting layer 220 away from the grain contact layer 40.
  • the filter film layer 30 is disposed in the display panel, and the filter film layer 30 is located on the side of the light-emitting layer 220 away from the grain contact layer 40, and the photosensitive sensing layer 20 is disposed on the side of the display panel away from the grain contact layer 40.
  • the photosensitive sensing layer 20 and the filter film layer 30 are disposed on the side of the display panel away from the grain contact layer 40, and the photosensitive sensing layer 20 and the filter film layer 30 are located on the side of the light-emitting layer 220 away from the grain contact layer 40.
  • the filter film layer 30 when the filter film layer 30 is disposed in the display panel, in order to avoid the influence on the structure or performance of the display layer in the display panel during the process of preparing the filter film layer 30, some embodiments of the present disclosure adopt IAD.
  • the filter film layer 30 is prepared by a process.
  • the display layer includes, for example, a pixel circuit, a liquid crystal layer, or the like provided on the array substrate.
  • the display layer includes, for example, a pixel circuit disposed on the array substrate, an OLED light emitting device, or the like.
  • the light emitting layer 220 of the LCD display device is a backlight
  • the backlight is located on the side of the LCD display panel away from the grain contact layer 40, and therefore, the filter film layer 30 is not disposed in the LCD display panel.
  • the display device 200 of some embodiments of the present disclosure provides that the filter film layer 30 in the texture recognition component is disposed on a side of the light-emitting layer 220 away from the grain contact layer 40, and the filter film layer 30 is used to filter out wavelengths greater than Or visible light equal to ⁇ .
  • the visible light having a wavelength greater than or equal to ⁇ can be filtered to reduce the light reflected by the finger, so that the fingerprint information recognized by the photosensitive sensing layer 20 can be recognized. more precise.
  • the display device 200 may further prevent the filter film layer 30 from filtering out light emitted from the light-emitting layer 220 for display, thereby affecting the display effect.
  • the display device 200 includes an OLED display panel, and the OLED display panel includes an array substrate, and the array substrate includes a substrate.
  • the texture identifying component includes the base substrate 80
  • the base substrate 80 is the substrate of the array substrate.
  • the buffer layer 210 is, for example, a buffer layer 210 disposed on a substrate of the array substrate.
  • the filter film layer 30 should be included between the substrate of the array substrate and the buffer layer 210.
  • Some embodiments of the present disclosure can reduce the thickness of the display device 200 by using the substrate substrate 80 in the texture recognition component as a substrate of the array substrate, and facilitate the thin design of the display device 200. On the other hand, it is also possible to avoid an influence on the structure or performance of the display layer in the display device 200 in the process of forming the filter film layer 30.
  • the embodiment of the present disclosure provides a method for preparing a texture recognition component. As shown in FIG. 3, the method includes: forming a photosensitive sensing layer 20; forming a filter film layer 30; forming a grain contact layer.
  • the filter film layer 30 is positioned between the photosensitive sensing layer 20 and the grain contact layer 40, and the filter film layer 30 is configured to filter visible light greater than or equal to ⁇ . Wherein, the value range of ⁇ is greater than or equal to 600 nm.
  • the texture recognition component can be configured to identify a touched object such as a fingerprint or a palm print.
  • a touched object such as a fingerprint or a palm print.
  • the embodiments of the present disclosure are not limited thereto, and are used for convenience of explanation. Identification of fingerprints or fingerprint recognition, etc., will be described in detail.
  • the texture contact layer 40 when the user performs fingerprint recognition, the texture contact layer 40 is in direct contact with the user's finger.
  • the surface of the texture contact layer 40 that is in direct contact with the user's finger is the grain contact surface F.
  • the grain contact surface F of the grain contact layer 40 refers to a surface of the display device that is in direct contact with the finger when the user performs fingerprint recognition.
  • the texture contact layer 40 is, for example, a texture recognition component or a cover plate on the outermost side of the display device.
  • the cover is for example glass.
  • the filter film layer 30 is configured to filter out visible light having a wavelength greater than or equal to ⁇ , which means that the filter film layer 30 can reduce the transmittance of visible light having a wavelength greater than or equal to ⁇ .
  • the specific transmittance of visible light having a wavelength greater than or equal to ⁇ is related to the specific structure of the filter film layer 30 and the number of layers.
  • the transmittance of light of different wavelengths after filtering the photo film layer 30 is as shown in FIG. 4 .
  • the texture recognizing component itself includes a plurality of film layers, and the plurality of film layers in the texture recognizing component have a certain transmittance even if it is a light transmissive material, even the light that is incident from the finger to the photosensitive sensing layer 20 is even There are also varying degrees of weakness in the unfiltered film layer 30. Based on this, it is assumed that the transmittance of light from the finger to the photosensitive sensing layer 20 is 80% in the case where the light does not pass through the filter film layer 30. In the case where the light passes through the filter film layer 30, as shown in FIG.
  • the light having a wavelength of less than 600 nm is less affected by the filter layer 30, and the transmittance is still close to 80%, and the wavelength is greater than or equal to 600 nm.
  • the transmittance of visible light is reduced from 80% to about 1%.
  • some embodiments of the present disclosure do not define the value of ⁇ as long as the value of ⁇ is above 600 nm (including 600 nm) and is in the visible range.
  • ⁇ is a value of 600 nm, 650 nm, 700 nm, 750 nm, or 800 nm.
  • the main band of light that is incident on the photosensor 10 through the finger in ambient light is light of a long band of 600 nm or more, and therefore, in some embodiments of the present disclosure, ⁇ Take the value of 600nm.
  • ⁇ Take the value of 600nm.
  • some embodiments of the present disclosure do not limit the specific structure of the filter film layer 30 as long as the filter film layer 30 can filter visible light having a wavelength greater than or equal to ⁇ .
  • the photosensitive sensing layer 20 includes a plurality of photosensitive sensing units 21, each of which is configured to be associated with texture information.
  • the optical signal is converted into an electrical signal.
  • the photosensitive sensing unit 21 is, for example, a photosensor, a photosensor, or the like.
  • some embodiments of the present disclosure do not define the arrangement manner of the plurality of photosensitive sensing units 21 in the photosensitive sensing layer 20, and the setting position thereof is only satisfied when the finger touches the grain contact surface of the grain contact layer 40. Fingerprint recognition is available at the location. Moreover, when the texture recognition component is applied to the display device, the area occupied by the plurality of photosensitive sensing units 21 does not affect the normal display of the display device.
  • the plurality of photosensitive sensing units 21 are arranged, for example, in a matrix, and are, for example, arranged in a row-by-row staggered manner.
  • some embodiments of the present disclosure do not define the order in which the photosensitive sensing layer 20 and the filter film layer 30 are formed, which is related to a particular process.
  • the filter film layer 30 may be formed before the photosensitive sensing layer 20, or may be formed after the photosensitive sensing layer 20, or may be independent of the order in which the photosensitive sensing layer 20 is formed.
  • the embodiment of the present disclosure provides a method for preparing a texture recognition component.
  • the filter film layer 30 is disposed on a side of the photosensitive sensing layer 20 adjacent to the grain contact layer 40, and the visible light having a wavelength greater than or equal to ⁇ is filtered by the filter film layer 30. .
  • the visible light having a wavelength greater than or equal to ⁇ can be filtered to reduce the light reflected by the finger, and the photosensitive sensing layer 20 can be accurately recognized. Fingerprint information.
  • the main band of the light that is incident on the photosensitive sensing layer 20 through the finger in the ambient light is a long wavelength band having a wavelength of 600 nm or more, by setting the ⁇ to be greater than or equal to 600 nm, the ambient light can be effectively filtered through the finger.
  • Light rays incident on the photosensitive sensing layer 20 further improve the accuracy of fingerprint recognition.
  • forming the filter film layer 30 further includes forming a first light transmissive layer 50 and a second light transmissive layer 60 on both sides of the filter film layer 30, respectively.
  • the first light transmissive layer 50 and the second light transmissive layer 60 are in contact with the filter film layer 30, respectively.
  • forming the filter film layer 30 includes: sequentially forming K filter film groups 31, and K filter film groups 31 are stacked. Where K is a positive integer greater than or equal to 1.
  • each of the K filter film groups 31 includes forming a first film layer 311, a second film layer 312, and a first film layer 311 in sequence.
  • the refractive index of the second film layer 312 is greater than the refractive index of the first film layer 311.
  • the thickness of the first film layer 311 is The thickness of the second film layer 312 is
  • T is a transmittance of visible light having a wavelength greater than or equal to ⁇ in the filter film layer 30, and T is less than a transmittance threshold of visible light having a wavelength greater than or equal to ⁇ in the filter film layer 30.
  • the n 1 is the refractive index of the first light transmissive layer 50
  • the n 2 is the refractive index of the second light transmissive layer 60
  • n g is the refractive index of the second film layer 312
  • n d is the first film layer 311 Refractive index.
  • firstly, forming the first light transmissive layer 50 and the second light transmissive layer 60 on both sides of the filter film layer 30 respectively means that a light transmissive layer is respectively disposed on both sides of the filter film layer 30.
  • the light transmissive layer on the side of the filter film layer 30 adjacent to the photosensor layer 20 is the first light transmissive layer 50, or the light transmissive layer on the side of the filter film layer 30 away from the photosensor layer 20 is The first light transmissive layer 50 may be. For example, as shown in FIG.
  • the first light transmissive layer 50 is disposed on the side of the filter film layer 30 adjacent to the photosensitive sensing layer 20, and the second light transmissive layer 60 is disposed on the filter film layer 30 away from the photosensitive sensing layer 20. side.
  • the first light transmissive layer 50 is disposed on a side of the filter film layer 30 away from the photosensitive sensing layer 20
  • the second light transmissive layer 60 is disposed on a side of the filter film layer 30 adjacent to the photosensor layer 20.
  • the first film layer 311 of the different filter film group 31 is formed by the same material, or may be formed by using different materials.
  • the second film layer 312 of the different filter film group 31 is formed by the same material, or can be formed by using different materials. That is to say, the filter film layer 30 may be composed of K filter film groups 31 having the same or different filter effects.
  • Some embodiments of the present disclosure do not define the materials of the first film layer 311 and the second film layer 312 in each of the filter film groups 31 as long as the refractive index of the second film layer 312 of each of the filter film groups 31 is greater than The refractive index of the first film layer 311 of one filter film group 31 may be sufficient.
  • the difference in refractive index between the first film layer 311 and the second film layer 312 is relatively large, and the material of the thin film layer is easily formed by a simple process.
  • the material of the first film layer 311 and the second film layer 312 the transmittance of visible light having a wavelength greater than or equal to ⁇ in the filter film layer 30 is lower.
  • the material of the first film layer 311 is, for example, one of SiO or SiO 2
  • the material of the second film layer 312 is, for example, one of TiO 2 or Ge.
  • the refractive index of SiO 2 is 1.44
  • the refractive index of SiO is 1.8
  • the refractive index of TiO 2 is 2.12
  • the refractive index of Ge is 4.0.
  • the first film layer 311 and the second film layer 312 are formed by a coating or plating process.
  • the coating process is, for example, a normal temperature coating process, and is, for example, a high temperature coating process.
  • the room temperature coating process is, for example, an IAD process.
  • the filter film layer 30 includes K filter film groups 31 stacked in a stack, wherein when K>1, the plurality of filter film groups 31 are stacked along the direction in which the photosensitive sensing layer 20 is directed to the grain contact layer 40. .
  • K represents the number of the filter film groups 31, K should be an integer.
  • the formula The calculated K value is determined. 5 shows a structural view of the filter film layer 30 when K is equal to 3, but the number of the filter film groups 31 in some embodiments of the present disclosure is not limited thereto, and the number K of the filter film groups 31 is also, for example. It is 2, 4, 5, 6, 8, 10, etc.
  • the embodiment of the present disclosure can filter the visible light greater than or equal to ⁇ by the filter film layer 30, it can be shot from the finger without filtering the photo film layer 30.
  • the transmittance of visible light greater than or equal to ⁇ on the photosensitive sensing layer 20 in the filter film layer is necessarily greater than the transmittance threshold of visible light having the wavelength greater than or equal to ⁇ in the filter film layer.
  • the transmittance threshold of the visible light having a wavelength greater than or equal to ⁇ in the filter film layer is related not only to the light transmittance of the filter film layer 30 and other light transmissive film layers in the texture recognition component. It is also related to the performance of the photosensitive sensing unit 21 in the photosensitive sensing layer 20.
  • the visible light having a wavelength greater than or equal to ⁇ has a transmittance threshold of less than 3% in the filter layer.
  • the transmittance of the visible light having a wavelength greater than or equal to ⁇ in the filter film layer is less than or equal to 1%, and at this time, it may be considered that the visible light from the finger to the photosensitive sensing layer 20 is greater than or equal to ⁇ .
  • the transmittance of light is almost zero and can be ignored to maximize the accuracy of fingerprint recognition.
  • Some embodiments of the present disclosure employ a suitable material such that the refractive index of the second film layer 312 is greater than the refractive index of the first film layer 311, and the transmittance of visible light having a wavelength greater than or equal to ⁇ is less than that in the filter film layer 30.
  • the calculated K value determines the number of the filter film groups 31, thereby obtaining the specific structure of the filter film layer 30.
  • the structure of the filter film layer 30 is simple and easy to form.
  • the method of fabricating the texture identifying component further includes forming an optical layer 70 on a side of the photosensitive sensing layer 20 adjacent to the grain contact layer 40.
  • the optical layer 70 includes a plurality of light transmissive holes.
  • Forming the photosensitive sensing layer 30 includes: forming a plurality of photosensitive sensing units 21, each of the plurality of photosensitive sensing units 21 corresponding to a light transmitting hole.
  • optical layer 70 may be formed before the photosensitive sensing layer 20, or may be formed after the photosensitive sensing layer 20, or may be independent of the order in which the photosensitive sensing layer 20 is formed.
  • the texture recognition component includes a substrate substrate 80, wherein the substrate substrate 80 may be disposed either as the first light transmissive layer 50 or as a film layer in the texture recognition component. .
  • the formation of the grain contact layer 40 further includes: forming the substrate substrate 80 A grain contact layer is formed on a side of the base substrate 80 away from the filter film layer 30.
  • first light transmissive layer 50, the filter film layer 30, and the second light transmissive layer 60 are formed when the base substrate 80 is separately disposed as one of the film recognition components, in some embodiments of the present disclosure
  • the first light transmissive layer 50, the filter film layer 30, and the second light transmissive layer 60 are sequentially formed on the side of the base substrate 80 away from the grain contact layer 40.
  • the filter film layer 30 is disposed on the side of the optical layer 70 adjacent to the photosensitive sensing layer 20.
  • the first light transmissive layer 50 is an optical layer 70
  • the second light transmissive layer 60 is an optical transparent adhesive layer 90 .
  • the optical layer 70 is first formed on the substrate, for example, the optical layer 70 is formed on the base substrate 80. Thereafter, the filter film layer 30 is directly formed and fixed on the optical layer 70. Finally, the optically clear adhesive layer 90 is used to bond the filter film layer 30 away from the optical layer 70 side to the other film layers in the texture recognition component. For example, the optical filter layer 30 is used to move the filter film layer 30 away. The side of the optical layer 70 is bonded to the photosensitive sensing layer 20.
  • the filter film layer 30 is disposed on a side of the encapsulation layer 100 adjacent to the photosensitive sensing layer 20.
  • the first transparent layer 50 is an encapsulation layer 100
  • the second transparent layer 60 is an optical transparent adhesive layer 90 .
  • the encapsulation layer 100 is first formed on the substrate, and the encapsulation layer 100 may be formed on the substrate substrate 80, for example.
  • the encapsulation layer 100 is configured to package the substrate substrate 80. If the base substrate 80 is an OLED substrate, the encapsulation layer 100 can protect the OLED device in the OLED substrate from air, moisture, and the like. Thereafter, the filter film layer 30 is directly formed and fixed on the encapsulation layer 100. Finally, the optically transparent adhesive layer 90 is used to bond the filter film layer 30 away from the surface of the encapsulation layer 100 and the surface of the photosensitive sensing layer 20 adjacent to the filter film layer 30.
  • the encapsulation layer 100 of the package substrate substrate 80 is further configured to encapsulate the photosensitive sensing layer 20, there is no gap between the encapsulation layer 100 and the photosensitive sensing layer 20, that is, the optical transparent adhesive layer can be disposed.
  • 90 is coated on the side of the photosensitive sensing layer 20 close to the encapsulating layer 100, and then the optical filter layer 30 is separated from the surface of the encapsulating layer 100 by the optical transparent adhesive layer 90, and the photosensitive sensing layer 20 is adjacent to the filter film layer 30.
  • the side surfaces are tightly bonded to ensure that the encapsulation layer 100 can protect the photosensitive sensing layer 20.
  • first light transmissive layer 50, the filter film layer 30, and the second light transmissive layer 60 are formed when the base substrate 80 is separately disposed as one of the film recognition components, in some embodiments of the present disclosure
  • the first light transmissive layer 50, the filter film layer 30, and the second light transmissive layer 60 are sequentially formed on the side of the photosensor layer 20 close to the substrate substrate 80.
  • the filter film layer 30 is disposed on the side of the optical layer 70 away from the photosensitive sensing layer 20.
  • the first light transmissive layer 50 is an optical layer 70
  • the second light transmissive layer 60 is an optical transparent adhesive layer 90 .
  • the filter film layer 30 when the filter film layer 30 is disposed on the side of the optical layer 70 away from the photosensitive sensing layer 20, the optical layer 70 is directly formed on the photosensitive sensing layer 20, or the optical layer 70 is adhered to the photosensitive layer. On the sensing layer 20. Thereafter, the filter film layer 30 is directly formed and fixed on the optical layer 70. Finally, the optically clear adhesive layer 90 is used to bond the filter film layer 30 away from the optical layer 70 side to the other film layers in the texture recognition component.
  • the filter film layer 30 can be formed by the optical transparent adhesive layer 90. The side away from the optical layer 70 is bonded to the base substrate 80.
  • the filter film layer 30 is disposed on a side of the encapsulation layer 100 away from the photosensitive sensing layer 20.
  • the first transparent layer 50 is an encapsulation layer 100
  • the second transparent layer 60 is an optical transparent adhesive layer 90 .
  • the encapsulation layer 100 is first formed on the photosensitive sensing layer 20.
  • the encapsulation layer 100 is configured to encapsulate the photosensitive sensing layer 20 to protect the photosensitive sensing layer 20 from air, moisture, and the like.
  • the filter film layer 30 is directly formed and fixed on the encapsulation layer 100.
  • the optically clear adhesive layer 90 is used to bond the filter film layer 30 away from the other side of the texture recognition component to the other of the texture recognition components.
  • the optical filter layer 30 is used to separate the filter film layer 30.
  • One side of the encapsulation layer 100 is bonded to the base substrate 80.
  • the method of preparing the filter film layer 30 directly on the optical layer 70 or the encapsulation layer 100 is simple. Moreover, since the filter film layer 30 is directly formed and fixed on the optical layer 70 or the encapsulation layer 100, in the process of preparing the filter film layer 30, even if a high temperature coating process is employed, the texture recognition component is not The structure and properties of other film layers (such as photosensitive sensing layers) are affected.
  • the first light transmissive layer 50 is the base substrate 80.
  • the filter film layer 30 and the second light transmissive layer 6 are formed when the base substrate 80 is disposed as the first light transmissive layer 50, in some embodiments of the present disclosure, the filter film layer 30 and the second light transmissive layer The layer 60 is sequentially formed on the side of the base substrate 80 close to the grain contact layer 40.
  • the second light transmissive layer 60 is a buffer layer 210.
  • the filter film layer 30 is disposed on a side of the base substrate 80 away from the photosensitive sensing layer 20.
  • the filter film layer 30 is directly formed and fixed on the base substrate 80.
  • the buffer layer 210 is formed on the side of the filter film layer 30 away from the base substrate 80.
  • the filter film layer 30 and the second light transmissive layer 6 are formed when the base substrate 80 is disposed as the first light transmissive layer 50, in some embodiments of the present disclosure, the filter film layer 30 and the second light transmissive layer The layer 60 is sequentially formed on the side of the base substrate 80 close to the photosensitive sensing layer 20.
  • the second light transmissive layer 60 is an optical transparent adhesive layer 90.
  • the filter film layer 30 is disposed on a side of the base substrate 80 adjacent to the photosensitive sensing layer 20.
  • the filter film layer 30 is directly formed and fixed on the base substrate 80.
  • the filter film layer 30 is bonded to the other film layers in the texture recognition component by the optical transparent adhesive layer 90 away from the substrate substrate 80 side, for example, the filter film layer 30 is formed by the optical transparent adhesive layer 90.
  • the photosensitive sensing layer 20 or the optical layer 70 is bonded to the side away from the substrate substrate 80.
  • the optical layer 70 or other film layers in the texture recognition component may be directly formed on the side of the filter film layer 30 away from the substrate substrate 80.
  • the method of preparing the filter film layer 30 directly on the base substrate 80 is simple. And since the filter film layer 30 is directly formed and fixed on the base substrate 80, in the process of preparing the filter film layer 30, even if a high-temperature coating process is employed, the other layers in the texture recognition component are not recognized. The structure and performance of the (for example, photosensitive sensing layer) are affected.
  • forming the photosensitive sensing layer 20 includes sequentially forming a first electrode layer 201, a photosensitive material layer 202, and a second electrode layer 203.
  • the material of the first electrode layer 201 is, for example, a transparent conductive material such as ITO.
  • the structures of the first electrode layer 201 and the second electrode layer 203 refer to the structures in the foregoing embodiments, and are not described herein again.

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Abstract

公开一种纹路识别组件及其制备方法、显示装置。所述纹路识别组件，包括光敏传感层、纹路接触层以及设置于所述光敏传感层靠近所述纹路接触层一侧的滤光膜层。所述滤光膜层被配置为滤除波长大于或等于λ的可见光。其中，所述λ的取值范围大于或等于600nm。

Description

纹路识别组件及其制备方法、显示装置
相关申请的交叉引用
本公开要求于2018年05月17日提交中国专利局、申请号为201810476167.3、申请名称为“一种纹路识别组件及其制备方法、显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，尤其涉及一种纹路识别组件及其制备方法、显示装置。
背景技术
指纹识别即通过比较不同指纹的细节特征点来进行身份鉴别，指纹识别的实现方式主要有电容式、光学式和超声波式三种。
其中，利用光学式进行指纹识别的过程中，由于经过手指反射的光线会发生散射，而手指与光敏传感器之间通常存在一定距离，因此光敏传感器接收到发生散射的光线会造成光敏传感器获取的图像模糊不清的问题，进而导致根据光敏传感器接收到的光线识别出的指纹信息不准确。
发明内容
一方面，本公开的一些实施例提供一种纹路识别组件，包括光敏传感层、纹路接触层，以及设置于所述光敏传感层靠近所述纹路接触层一侧的滤光膜层。所述滤光膜层被配置为滤除波长大于或等于λ的可见光；其中，所述λ的取值范围大于或等于600nm。
在本公开的一些实施例中，所述滤光膜层的两侧分别设置有第一透光层和第二透光层，所述第一透光层和所述第二透光层与所述滤光膜层接触。 所述滤光膜层包括层叠设置的K个滤光膜组，其中，K为大于或等于1的正整数。所述K个滤光膜组中的每个所述滤光膜组包括相对设置的两个第一膜层，以及设置于两个所述第一膜层之间的第二膜层。其中，所述第二膜层的折射率大于所述第一膜层的折射率。所述第一膜层的厚度为
Figure PCTCN2019076558-appb-000001
所述第二膜层的厚度为
Figure PCTCN2019076558-appb-000002
所述K的取值根据公式
Figure PCTCN2019076558-appb-000003
确定。其中，所述T为波长大于或等于λ的可见光在所述滤光膜层中的透过率，且T小于所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值。所述n 1为所述第一透光层的折射率，所述n 2为所述第二透光层的折射率，所述n g为所述第二膜层的折射率，所述n d为所述第一膜层的折射率。
在本公开的一些实施例中，所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值小于或等于3％。
在本公开的一些实施例中，所述第一膜层的材料包括SiO或SiO 2中的一种。所述第二膜层的材料包括TiO 2或Ge中的一种。
在本公开的一些实施例中，所述第一透光层包括衬底基板，所述第二透光层包括光学透明胶层或缓冲层。
在本公开的一些实施例中，所述纹路识别组件还包括设置于所述滤光膜层靠近所述纹路接触层一侧的衬底基板。其中，所述第一透光层包括光学层或封装层，所述第二透光层包括光学透明胶层。
在本公开的一些实施例中，所述纹路识别组件还包括设置于所述光敏传感层靠近所述纹路接触层一侧的光学层；所述光学层包括多个透光孔。所述光敏传感层包括多个光敏传感单元，多个光敏传感单元中的每个所述光敏传感单元均与一透光孔对应。
在本公开的一些实施例中，沿所述光敏传感层靠近所述滤光膜层的方向，所述光敏传感层包括依次设置的第一电极层、光敏材料层以及第二电极层。
另一方面，本公开的一些实施例提供一种显示装置，包括发光层，还包括上述所述的纹路识别组件。其中，所述纹路识别组件中的滤光膜层设置于所述发光层远离所述纹路识别组件中的纹路接触层的一侧。
在本公开的一些实施例中，所述显示装置包括OLED显示面板，所述OLED显示面板包括阵列基板，所述阵列基板包括衬底。所述纹路识别组件包括衬底基板，所述衬底基板为所述阵列基板的衬底。
另一方面，本公开的一些实施例提供一种纹路识别组件的制备方法，包括：形成光敏传感层，形成滤光膜层，形成纹路接触层。其中，所述滤光膜层位于所述光敏传感层和所述纹路接触层之间，所述滤光膜层被配置为滤除波长大于或等于λ的可见光。其中，所述λ的取值范围大于或等于600nm。
在本公开的一些实施例中，形成所述滤光膜层还包括：分别在所述滤光膜层的两侧形成第一透光层和第二透光层。其中，所述第一透光层和所述第二透光层分别与所述滤光膜层接触。
在本公开的一些实施例中，形成所述滤光膜层，包括：依次形成K个滤光膜组，K个滤光膜组层叠设置，其中，K为大于或等于1的正整数。其中，形成所述K个滤光膜组中的每个所述滤光膜组，包括：依次形成第一膜层、、第二膜层和第一膜层。所述第二膜层的折射率大于所述第一膜层的折射率。所述第一膜层的厚度为
Figure PCTCN2019076558-appb-000004
所述第二膜层的厚度为
Figure PCTCN2019076558-appb-000005
所述K的取值根据公式
Figure PCTCN2019076558-appb-000006
确定。其中，所述T为波长大于或等于λ的可见光在所述滤光膜层中的透过率，且T小于所述波 长大于或等于λ的可见光在所述滤光膜层中的透过率阈值。所述n 1为所述第一透光层的折射率，所述n 2为所述第二透光层的折射率，所述n g为所述第二膜层的折射率，所述n d为所述第一膜层的折射率。
在本公开的一些实施例中，所述第一透光层包括衬底基板。所述滤光膜层和所述第二透光层依次形成于所述衬底基板靠近所述纹路接触层的一侧；其中，所述第二透光层包括缓冲层。或，所述滤光膜层和所述第二透光层依次形成在所述衬底基板靠近所述光敏传感层的一侧；其中，所述第二透光层包括光学透明胶层。
在本公开的一些实施例中，形成纹路接触层，还包括：形成衬底基板，在所述衬底基板远离所述滤光膜层的一侧形成纹路接触层。所述第一透光层、所述滤光膜层和所述第二透光层依次形成在所述衬底基板远离所述纹路接触层的一侧。或，所述第一透光层、所述滤光膜层和所述第二透光层依次形成在光敏传感层靠近所述衬底基板的一侧。其中，所述第一透光层包括光学层或封装层，所述第二透光层包括光学透明胶层。
在本公开的一些实施例中，所述纹路识别组件的制备方法还包括：在所述光敏传感层靠近所述纹路接触层一侧形成光学层；所述光学层包括多个透光孔。形成所述光敏传感层，包括：形成多个光敏传感单元，所述多个光敏传感单元中的每个所述光敏传感单元均与一透光孔对应。
在本公开的一些实施例中，形成所述光敏传感层，包括：依次形成第一电极层、光敏材料层以及第二电极层。
附图说明
为了更清楚地说明本公开的一些实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为相关技术中的一种显示装置的结构示意图；
图2a为根据本公开的一些实施例的一种光线透过手指射到光敏传感层的示意图；
图2b为根据本公开的一些实施例的透过手指射到光敏传感层的光线的光谱图；
图3为根据本公开的一些实施例的一种纹路识别组件的结构示意图；
图4为根据本公开的一些实施例的一种透过手指射到光敏传感层的光线的光谱图；
图5为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图6a为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图6b为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图7a为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图7b为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图8a为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图8b为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图9a为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图9b为根据本公开的一些实施例的另一种纹路识别组件的结构示意图；
图10为根据本公开的一些实施例的一种显示装置的结构示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
在本公开的一些实施例中，除非另有说明，“多个”是指两个或多于两个；“和/或”仅仅是描述关联对象的关联关系，表示三种关系，例如，A和/或B，表示为：单独存在A，同时存在A和B，单独存在B这三种情况。“第一”以及“第二”是对功能和作用基本相同的相同项或相似项进行区分，且本领域技术人员理解的是，“第一”和“第二”并不对数量和执行次序进行限定，也并不限定一定不同。
如图1所示，相关技术采用通孔滤光的方式，对经过手指反射后散射的光线进行过滤，以获取较为精确的指纹信息。然而，即使采用通孔滤光方式，指纹识别的准确性仍然受干扰光的影响。例如，如图2a所示，环境光在照射到手指上之后，会穿透过手指照射到光敏传感器10上，构成指纹识别的干扰光。虽然，环境光在穿过手指后的光线因手指内的生物组织发生了变化，但是，根据图2b所示的光谱仪的测试结果，环境光中透过手指照射到光敏传感器10上的光的主要波段为波长600nm以上的长波段，并不能通过通孔滤光的方式滤除，所以该波段范围的光仍然会影响指纹识别的准确性。
本公开的一些实施例提供一种纹路识别组件，如图3所示，包括光敏传感层20、纹路接触层40以及设置于光敏传感层20靠近纹路接触层40一侧的滤光膜层30。其中，滤光膜层30被配置为滤除波长大于或等于λ 的可见光。波长λ的取值范围大于或等于600nm。
此处，纹路识别组件进行纹路识别的原理为：光线照到有纹路的受测物(例如指纹)后，经过受测物的波谷(后文称为谷)和波峰(后文称为脊)发生反射时，反射光的光能存在差异。其中，光束经过谷反射的光能相对脊反射的光能低。光敏传感层20基于接收到的光能的差异来进行纹路识别。
需要说明的是，第一，纹路识别组件被配置为识别指纹、掌纹等有纹路的受测物，本公开的一些实施例对此不做限定。为了方便阐述，后文均以用于识别指纹或指纹识别等为例进行详细说明。
第二，在纹路识别组件中，当用户进行指纹识别时，纹路接触层40与用户的手指直接接触。其中，如图3所示，纹路接触层40中与用户手指直接接触的表面为纹路接触面F。当所述纹路识别组件位于显示装置中时，纹路接触层40的纹路接触面F是指：用户进行指纹识别时，显示装置中与手指直接接触的面。
其中，纹路接触层40例如是纹路识别组件或显示装置最外侧的盖板。纹路接触面F例如是作为纹路接触层40的盖板中远离光敏传感层20一侧的表面。所述盖板例如是玻璃。
第三，滤光膜层30用于滤除波长大于或等于λ的可见光，是指：滤光膜层30可以使所有波长大于或等于λ的可见光的透过率降低。经过滤光膜层30后，波长大于或等于λ的可见光的具体透过率，与滤光膜层30的具体结构以及层数有关。
示例的，以λ等于600nm为例，不同波长的光线经过滤光膜层30后的透过率如图4所示。其中，由于纹路识别组件本身包括多个膜层，且纹路识别组件中的多个膜层即使为透光材料，也有一定的透过率，因此，从手指射到光敏传感层20的光线即使不经过滤光膜层30也存在不同程度的衰弱。基于此，假设在光线不经过滤光膜层30的情况下，从手指射到光敏 传感层20的光线的透过率为80％。而在光线经过滤光膜层30的情况下，如图4所示，波长小于600nm的光线受滤光膜层30的影响很小，其透过率仍接近80％，波长大于或等于600nm的可见光的透过率从80％降低到1％左右。
第四，本公开的一些实施例不对λ的取值进行限定，只要λ的取值在600nm以上(包括600nm)，且在可见光范围内即可。例如，λ取值600nm、650nm、700nm、750nm或800nm等。
考虑到图2b所示的光谱仪测试结果中，环境光中透过手指射到光敏传感器10上的光的主要波段为600nm以上的长波段的光，因此，在本公开的一些实施例中，λ取值600nm。这样一来，通过采用合适的滤光膜层30的结构，可以对波长大于或等于600nm的可见光进行滤除，从而降低波长大于或等于600nm的可见光对指纹识别的准确性的影响。
第五，本公开的一些实施例不对滤光膜层30的具体结构进行限定，只要滤光膜层30可以滤除波长大于或等于λ的可见光即可。
第六，如图6a和6b所示，在本公开的一些实施例中，光敏传感层20包括多个光敏传感单元21，其每个光敏传感单元21被配置为将与纹路信息相关的光信号转化为电信号。其中，光敏传感单元21例如是光敏传感器、光电传感器等。
第七，本公开的一些实施例不对光敏传感层20中的多个光敏传感单元21的排布方式进行限定，其设置位置只要满足：当手指触摸纹路接触层40的纹路接触面F的任意位置时，都可进行指纹识别。而且当所述纹路识别组件应用于显示装置时，多个光敏传感单元21所占的区域不影响显示装置的正常显示即可。多个光敏传感单元21例如呈矩阵排列，又例如是逐行交错排列。
本公开的一些实施例提供的纹路识别组件，通过在光敏传感层20靠近纹路接触层40一侧设置滤光膜层30，可以利用滤光膜层30滤除波长 大于或等于λ的可见光。一方面，在手指与光敏传感层20之间存在一定距离的情况下，通过滤除波长大于或等于λ的可见光，可以减少经过手指反射的光线，确保光敏传感层20能够准确识别出的指纹信息。另一方面，由于环境光中透过手指射到光敏传感层20上的光的主要波段为波长600nm以上的长波段，通过设置λ大于或等于600nm，可以有效滤除环境光中透过手指射到光敏传感层20上的光线，从而提高指纹识别的准确性。
此外，本公开的一些实施例中，光敏传感层20远离纹路接触层40的一侧遮光设置，即光敏传感层20远离纹路接触层40的一侧设置遮光层，可以避免从光敏传感层20远离纹路接触层40一侧的光进入光敏传感层20，并对指纹识别的准确性造成影响。
在本公开的一些实施例中，如图5所示，滤光膜层30的两侧分别设置有第一透光层50和第二透光层60，第一透光层50和第二透光层60与滤光膜层30接触。
滤光膜层30包括层叠设置的K个滤光膜组31，其中，K为大于或等于1的正整数。K个滤光膜组31中的每个滤光膜组31包括相对设置的两个第一膜层311、以及设置于两个第一膜层311之间的第二膜层312。其中，第二膜层312的折射率大于第一膜层311的折射率。第一膜层311的厚度为
Figure PCTCN2019076558-appb-000007
第二膜层312的厚度为
Figure PCTCN2019076558-appb-000008
所述K的取值根据公式
Figure PCTCN2019076558-appb-000009
确定。其中，所述T为波长大于或等于λ的可见光在滤光膜层30中的透过率，且T小于所述波长大于或等于λ的可见光在滤光膜层30中的透过率阈值。所述n 1为第一透光层50的折射率，所述n 2为第二透光层60的折射率，n g为第二膜层312的折射率，n d为第一膜层311的折射率。
需要说明的是，第一，在滤光膜层30的两侧分别设置有第一透光层 50和第二透光层60，是指：在滤光膜层30的两侧分别设置透光层，其中，以滤光膜层30靠近光敏传感层20一侧的透光层为第一透光层50，或，以滤光膜层30远离光敏传感层20一侧的透光层为第一透光层50，均可。例如，如图5所示，第一透光层50设置在滤光膜层30靠近光敏传感层20一侧，第二透光层60设置在滤光膜层30远离光敏传感层20一侧。又例如，第一透光层50设置在滤光膜层30远离光敏传感层20一侧，第二透光层60设置在滤光膜层30靠近光敏传感层20一侧。
第二，不同滤光膜组31的第一膜层311采用统统的材料制作而成，或，采用不同的材料制作形成，均可。同理，不同滤光膜组31的第二膜层312采用相同的材料制作形成，或，采用不同的材料制作形成，均可。这也就是说，滤光膜层30由K个滤光效果相同或不同的滤光膜组31构成，均可。本公开的一些实施例不对各个滤光膜组31中的第一膜层311和第二膜层312的材料进行限定，只要每一个滤光膜组31的第二膜层312的折射率大于同一个滤光膜组31的第一膜层311的折射率即可。
此处，可选地，每一个滤光膜组31中，采用第一膜层311和第二膜层312的折射率差值比较大，并且易通过简单的工艺形成较薄的膜层的材料，作为第一膜层311和第二膜层312的材料，以使波长大于或等于λ的可见光在滤光膜层30中的透过率更低。例如，每一个滤光膜组31中，第一膜层311的材料例如是SiO或SiO 2中的一种，第二膜层312的材料例如是TiO 2或Ge中的一种。其中，当λ等于600nm时，SiO 2的折射率为1.44，SiO的折射率为1.8，TiO 2的折射率为2.12，Ge的折射率为4.0。
其中，每一个滤光膜组31中，采用涂覆或镀膜的工艺形成第一膜层311和第二膜层312。镀膜工艺例如是常温镀膜工艺，又例如是高温镀膜工艺。常温镀膜工艺例如是离子辅助沉积(Ion Assisted Deposition，简称IAD)工艺。
第三，滤光膜层30包括层叠设置的K个滤光膜组31，其中，当K＞1 时，多个滤光膜组31沿光敏传感层20指向纹路接触层40的方向层叠设置。
此处，本领域的技术人员应该知道，在K表示是滤光膜组31的个数的情况下，K应该为整数。至于K的具体取值，由T小于所述波长大于或等于λ的可见光在滤光膜层30中的透过率阈值时，公式
Figure PCTCN2019076558-appb-000010
计算得出的K值来确定。图5示出了K等于3时滤光膜层30的结构图，但本公开的一些实施例中滤光膜组31的个数并不限于此，滤光膜组31的个数K还例如是2个、4个、5个、6个、8个、10个等。
以K等于3为例，制备滤光膜层30的过程为：依次形成第一膜层311、第二膜层312、第一膜层311、第一膜层311、第二膜层312、第一膜层311、第一膜层311、第二膜层312、第一膜层311。
第四，本领域的技术人员应该知道，由于本公开实施例可利用滤光膜层30滤除大于或等于λ的可见光，因此，在不经过滤光膜层30的情况下，从手指射到光敏传感层20上的大于或等于λ的可见光在所述滤光膜层中的透过率，必然大于所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值。其中，所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值不但与滤光膜层30及所述纹路识别组件中其他透光膜层的光的透过率有关，还与光敏传感层20中光敏传感单元21的性能有关。
例如，所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值小于3％。又例如，所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值小于或等于1％，此时，可认为从手指射到光敏传感层20的大于或等于λ的光线的透过率几乎为零，可忽略不计，以最大程度提高指纹识别的准确性。
本公开的一些实施例采用适当的材料使第二膜层312的折射率大于第一膜层311的折射率，并利用波长大于或等于λ的可见光在滤光膜层30 中的透过率小于所述波长大于或等于λ的可见光在滤光膜层30中的透过率阈值时，计算得出的K值来决定滤光膜组31的个数，从而得到滤光膜层30的具体结构，以使得滤光膜层30滤除波长大于或等于λ的可见光，该滤光膜层30的结构简单易形成。
在本公开的一些实施例中，如图6a和图6b所示，所述纹路识别组件还包括设置于光敏传感层20靠近纹路接触层40一侧的光学层70；光学层70包括多个透光孔，光敏传感层20中的每个光敏传感单元21均与一透光孔对应。
可以理解到，光学层70的多个透光孔为透光区，光学层70中每个透光孔的周围区域为不透光区。
此处，包含多个透光孔的光学层70可以采用小孔成像原理，解决由于混光造成的光敏传感层20成像模糊问题。或者，包括多个透光孔的光学层70例如是准直器，以避免从手指与纹路接触层40之间的光线以大角度(以垂直于光学层70的方向为法线方向，与法线之间的夹角越大，则光线的角度越大)射到光敏传感层20上，或者避免经手指反射的光线中的大角度光线射到光敏传感层20上，以提高指纹识别的准确性。
需要说明的是，本公开的一些实施例不对滤光膜层30和光学层70的相对位置进行限定，只要滤光膜层30和光学层70都设置在光敏传感层20靠近纹路接触层40一侧即可。例如，如图6a所示，光学层70设置在滤光膜层30靠近光敏传感层20的一侧。又例如，如图6b所示，光学层70设置在滤光膜层30远离光敏传感层20的一侧。
在此基础上，滤光膜层30和光学层70例如为直接接触，又例如为间隔其他膜层设置。图6a和图6b仅示出滤光膜层30和光学层70直接接触时，所述纹路识别组件的结构。
另外需要说明的是，在本公开的一些实施例中，当光学层70与滤光膜层30直接接触时，光学层70可以复用为纹路识别组件中的其它膜层，例 如，光学层70复用为第一透光层50或第二透光层60。也就是说，第一透光层50或第二透光层60为光学层70。
在本公开的一些实施例中，通过在光敏传感层20靠近纹路接触层40的一侧设置光学层70，利用光学层70的不透光区对杂散光和入射到光学层70的大角度光线进行遮挡，可以减少对光敏传感层20识别指纹时所需要的光线的干扰，以提高指纹识别的准确性。
在本公开的一些实施例中，纹路识别组件包括衬底基板80，其中，所述衬底基板80既可以作为第一透光层50设置，也可以作为纹路识别组件中的一个膜层单独设置。
对于衬底基板80作为纹路识别组件中的一个膜层单独设置的方式，在本公开的一些实施例中，如图7a和7b所示，所述纹路识别组件还包括设置于滤光膜层30靠近纹路接触层40一侧的衬底基板80。其中，第一透光层50为光学层70，第二透光层60为光学透明胶层90。
此处，光学层70在纹路识别组件中作为第一透光层50。
需要说明的是，第一，如图7a所示，滤光膜层30设置于光学层70靠近光敏传感层20的一侧；或者，如图7b所示，滤光膜层30设置在光学层70远离光敏传感层20的一侧。
示例性地，如图7b所示，当滤光膜层30设置在光学层70远离光敏传感层20的一侧时，光学层70直接形成在光敏传感层20上，或者，光学层70粘附于光敏传感层20上。之后，滤光膜层30直接形成并固定在光学层70上。最后，利用光学透明胶层90将滤光膜层30远离光学层70一侧与所述纹路识别组件中的其他膜层粘合起来，例如，可以利用光学透明胶层90将滤光膜层30远离光学层70一侧与衬底基板80粘合起来。
在本公开的一些实施例中，光学透明胶层90的材料例如采用光学胶(Optically Clear Adhesive，简称OCA)。
第二，光学层70中的多个透光孔为通孔，或者，透光孔中设置有透光 材料。例如，光学层70中透光孔所在的部分的材料为透光材料，光学层70中除透光孔以外的其他部分的材料为不透光材料。由于滤光膜层30直接形成并固定在光学层70上，且与光学层70直接接触，因此，透光孔中设置有透光材料，可以避免光学层70的透光孔所在的位置为通孔时，对应通孔位置处的滤光膜层30受力与其他位置处的滤光膜层30的受力不平衡，从而使所述通孔对滤光膜层30的结构造成影响，进而影响滤光膜层30的滤光效果。
本公开的一些实施例中，可以将滤光膜层30直接形成并固定在光学层70上，制备方法简单。并且，由于滤光膜层30直接形成并固定在光学层70上，因此，在制备滤光膜层30的过程中，即使采用高温镀膜工艺，也不会对所述纹路识别组件中其他膜层(例如光敏传感层)的结构及性能造成影响。
对于衬底基板80作为纹路识别组件中的一个膜层单独设置的方式，在本公开的一些实施例中，如图8a和图8b所示，所述纹路识别组件还包括设置于滤光膜层30靠近纹路接触层40一侧的衬底基板80。其中，第一透光层50为封装层(Thin Film Encapsulation，简称TFE)100，第二透光层60为光学透明胶层90。
需要说明的是，如图8a所示，滤光膜层30设置于封装层100靠近光敏传感层20的一侧；或者，如图8b所示，滤光膜层30设置在封装层100远离光敏传感层20的一侧。
示例性地，如图8a所示，当滤光膜层30设置于封装层100靠近光敏传感层20的一侧时，先在基底上形成封装层100，例如可以在衬底基板80上形成封装层100。封装层100被配置为封装衬底基板80。若衬底基板80为OLED基板，封装层100可以保护OLED基板中的OLED器件不受空气、水分等的侵袭。之后，滤光膜层30直接形成并固定在封装层100上。最后，利用光学透明胶层90将滤光膜层30远离封装层100一侧与光敏传 感层20靠近滤光膜层30一侧表面粘合起来。
可以理解的是，如果上述封装衬底基板80的封装层100还被配置为封装光敏传感层20时，封装层100对光敏传感层20起到保护效果，即，封装层100与光敏传感层20之间无缝隙，可以将光学透明胶层90涂覆在光敏传感层20靠近封装层100一侧，再通过光学透明胶层90将滤光膜层30远离封装层100一侧表面，与光敏传感层20靠近滤光膜层30一侧表面紧密粘合，从而确保封装层100可以对光敏传感层20起到保护。
示例性地，如图8b所示，当滤光膜层30设置在封装层100远离光敏传感层20的一侧时，先在光敏传感层20上形成封装层100。封装层100被配置为封装光敏传感层20，以保护光敏传感层20不受空气、水分等的侵袭。之后，滤光膜层30直接形成并固定在封装层100上。最后，利用光学透明胶层90将滤光膜层30远离封装层100一侧与所述纹路识别组件中的其他膜层粘合起来，例如，利用光学透明胶层90将滤光膜层30远离封装层100的一侧与衬底基板80粘合起来。
其中，光学透明胶层90的材料例如采用OCA。
本公开实施例中，将滤光膜层30直接形成并固定在封装层100上的制作方式，制备方法简单。并且，由于滤光膜层30直接形成并固定在封装层100上，因此，在制备滤光膜层30的过程中，即使采用高温镀膜工艺，也不会对所述纹路识别组件中其他膜层(例如光敏传感层)的结构及性能造成影响。
对于衬底基板80作为第一透光层50设置的方式，在本公开的一些实施例中，如图9a和图9b所示，第一透光层50为衬底基板80，第二透光层60为光学透明胶层90或缓冲层210。
需要说明的是，如图9a所示，滤光膜层30设置于衬底基板80远离光敏传感层20的一侧；或者，如图9b所示，滤光膜层30设置在衬底基板80靠近光敏传感层20的一侧。
示例性地，如图9a所示，当滤光膜层30设置于衬底基板80远离光敏传感层20的一侧时，滤光膜层30直接形成并固定在衬底基板80上。之后，在滤光膜层30远离衬底基板80一侧形成缓冲层210。
示例性地，如图9b所示，当滤光膜层30设置在衬底基板80靠近光敏传感层20的一侧时，滤光膜层30直接形成并固定在衬底基板80上。之后，利用光学透明胶层90将滤光膜层30远离衬底基板80的一侧与所述纹路识别组件中的其他膜层粘合起来，例如，利用光学透明胶层90将滤光膜层30远离衬底基板80一侧与光敏传感层20或光学层70粘合起来。当然，在衬底基板80上形成滤光膜层30之后，还可以在滤光膜层30远离衬底基板80一侧直接形成光学层70或所述纹路识别组件中的其他膜层。
其中，光学透明胶层90可以是OCA。
本公开实施例中，将滤光膜层30直接形成并固定在衬底基板80上的制作方式，制备方法简单。并且，由于滤光膜层30直接形成并固定在衬底基板80上，因此，在制备滤光膜层30的过程中，即使采用高温镀膜工艺，也不会对所述纹路识别组件中其他膜层(例如光敏传感层)的结构及性能造成影响。
对于光敏传感层20的结构，本公开的一些实施例对此不做限定，只要光敏传感层20能够实现将与纹路信息相关的光信号转化为电信号即可。示例性地，沿光敏传感层20靠近滤光膜层30的方向，光敏传感层20包括依次设置的第一电极层201、光敏材料层202以及第二电极层203。其中，第一电极层201的材料例如是氧化铟锡(Indium tin oxide，简称ITO)等透明导电材料。
此处，第一电极层201和第二电极层203的结构可以有多种。例如，第一电极层201包括多个第一电极。每个第一电极在纹路接触层40上的投影均与第二电极层203具有重叠区域。又例如，第一电极层201包括多个第一电极，第二电极层203包括多个第二电极。一个第一电极在纹路接触 层40上的投影，与一个第二电极在纹路接触层40上的投影具有重叠区域。又例如，第二电极层203包括多个第二电极。每个第二电极在纹路接触层40上的投影均与第一电极层201具有重叠区域。
此外，所述纹路识别组件还包括薄膜晶体管，所述薄膜晶体管包括栅极、栅绝缘层、有源层、源极和漏极，所述薄膜晶体管的漏极与光敏传感层20的第一电极层201电连接。所述薄膜晶体管可作为开关，控制光敏传感层20将与纹路信息相关的电信号发送给所述纹路识别组件中的控制器，所述控制器根据接收到的电信号实现纹路识别。
本公开的一些实施例提供一种显示装置，如图10所示，包括发光层220，还包括上述任一实施例所述的纹路识别组件。其中所述纹路识别组件中的滤光膜层30设置于发光层220远离纹路接触层40的一侧。
此处，纹路接触层40中的纹路接触面F为显示装置200中最靠近显示侧的表面。
需要说明的是，第一，显示装置200可以是显示面板，也可以是包括显示面板的显示器。其中，显示面板可以是OLED显示面板，也可以是液晶显示面板(Liquid Crystal Display，简称LCD)，本公开的一些实施例对此不进行限定，只要所述显示装置200可以用于显示即可。
当所述显示面板为OLED显示面板时，显示装置200的发光层220为OLED发光器件，所述OLED发光器件包括阴极、阳极、以及设置于阴极和阳极之间的发光功能层。
当所述显示面板为LCD显示面板时，显示装置200的发光层220为背光源。
第二，本公开的一些实施例不对光敏传感层20和滤光膜层30的位置进行限定，只要滤光膜层30设置在显示装置200的发光层220远离纹路接触层40一侧，且光敏传感层20设置在滤光膜层30远离纹路接触层40一侧即可。
示例性地，光敏传感层20和滤光膜层30均设置在显示面板内，且光敏传感层20和滤光膜层30位于发光层220远离纹路接触层40一侧。或者，滤光膜层30设置在显示面板内，且滤光膜层30位于发光层220远离纹路接触层40一侧，光敏传感层20设置在显示面板远离纹路接触层40一侧。或者，光敏传感层20和滤光膜层30均设置在显示面板远离纹路接触层40一侧，且光敏传感层20和滤光膜层30位于发光层220远离纹路接触层40一侧。
其中，当滤光膜层30设置在显示面板内时，为了避免在制备滤光膜层30的过程中，对显示面板内的显示层的结构或性能造成影响，本公开的一些实施例采用IAD工艺制备滤光膜层30。
其中，对于LCD显示面板，显示层例如包括设置在阵列基板上的像素电路、液晶层等。对于OLED显示面板，显示层例如包括设置在阵列基板上的像素电路、OLED发光器件等等。
当然，由于LCD显示装置的发光层220为背光源，背光源位于LCD显示面板远离纹路接触层40一侧，因此，不会将滤光膜层30设置在LCD显示面板中。
本公开的一些实施例提供的显示装置200，通过将所述纹路识别组件中的滤光膜层30设置于发光层220远离纹路接触层40的一侧，利用滤光膜层30滤除波长大于或等于λ的可见光。一方面，在手指与光敏传感层20之间存在一定距离的情况下，可以通过滤除波长大于或等于λ的可见光，减少经过手指反射的光线，使光敏传感层20识别出的指纹信息更加准确。另一方面，由于环境光中透过手指射到光敏传感层20上的光的主要波段为波长600nm以上的长波段，通过设置λ大于或等于600nm，可以有效滤除环境光中透过手指射到光敏传感层20上的光线，从而提高指纹识别的准确性。另一方面，本公开的一些实施例提供的显示装置200还可避免滤光膜层30滤除从发光层220发出的用于显示的光，影响显示效果。
可选的，显示装置200包括OLED显示面板，所述OLED显示面板包括阵列基板，所述阵列基板包括衬底。在所述纹路识别组件包括衬底基板80的情况下，衬底基板80为所述阵列基板的衬底。
在此基础上，对于滤光膜层30设置于衬底基板80与缓冲层210之间的情况，所述缓冲层210例如是设置在所述阵列基板的衬底上的缓冲层210。本领域的技术人员应该知道，在阵列基板的衬底与缓冲层210之间应该仅包括滤光膜层30。
本公开的一些实施例通过使所述纹路识别组件中的衬底基板80复用作阵列基板的衬底，一方面，可减小显示装置200的厚度，有利于显示装置200的薄型化设计。另一方面，还可以避免在形成滤光膜层30的过程中，对显示装置200中的显示层的结构或性能造成影响。
本公开实施例提供一种纹路识别组件的制备方法，如图3所示，包括：形成光敏传感层20；形成滤光膜层30；形成纹路接触层。滤光膜层30位于光敏传感层20和纹路接触层40之间，滤光膜层30被配置为滤除大于或等于λ的可见光。其中，所述λ的取值范围大于或等于600nm。
需要说明的是，第一，纹路识别组件可被配置为识别指纹、掌纹等有纹路的受测物，本公开的一些实施例对此不做限定，为了方便阐述，后文均以用于识别指纹或指纹识别等为例进行详细说明。
第二，在纹路识别组件中，当用户进行指纹识别时，纹路接触层40与用户的手指直接接触。其中，如图3所示，纹路接触层40中与用户手指直接接触的表面为纹路接触面F。当所述纹路识别组件位于显示装置中时，纹路接触层40的纹路接触面F是指：用户进行指纹识别时，显示装置中与手指直接接触的面。
其中，纹路接触层40例如是纹路识别组件或显示装置最外侧的盖板。所述盖板例如是玻璃。
第三，滤光膜层30被配置为滤除波长大于或等于λ的可见光，是指： 滤光膜层30可以使所有波长大于或等于λ的可见光的透过率降低。经过滤光膜层30后，波长大于或等于λ的可见光的具体透过率，与滤光膜层30的具体结构以及层数有关。
示例性地，以λ等于600nm为例，不同波长的光线经过滤光膜层30后的透过率如图4所示。其中，由于纹路识别组件本身包括多个膜层，且纹路识别组件中的多个膜层即使为透光材料，也有一定的透过率，因此，从手指射到光敏传感层20的光线即使不经过滤光膜层30也存在不同程度的衰弱。基于此，假设在光线不经过滤光膜层30的情况下，从手指射到光敏传感层20的光线的透过率为80％。而在光线经过滤光膜层30的情况下，如图4所示，波长小于600nm的光线受滤光膜层30的影响很小，其透过率仍接近80％，波长大于或等于600nm的可见光的透过率从80％降低到1％左右。
第四，本公开的一些实施例不对λ的取值进行限定，只要λ的取值在600nm以上(包括600nm)，且在可见光范围内即可。例如，λ取值600nm、650nm、700nm、750nm或800nm等。
考虑到图2b所示的光谱仪测试结果中，环境光中透过手指射到光敏传感器10上的光的主要波段为600nm以上的长波段的光，因此，在本公开的一些实施例中，λ取值600nm。这样一来，通过采用合适的滤光膜层30的结构，可以对波长大于或等于600nm的可见光进行滤除，从而降低波长大于或等于600nm的可见光对指纹识别的准确性的影响。
第五，本公开的一些实施例不对滤光膜层30的具体结构进行限定，只要滤光膜层30可以滤除波长大于或等于λ的可见光即可。
第六，如图6a和6b所示，在本公开的一些实施例中，光敏传感层20包括多个光敏传感单元21，其每个光敏传感单元21被配置为将与纹路信息相关的光信号转化为电信号。其中，光敏传感单元21例如是光敏传感器、光电传感器等。
第七，本公开的一些实施例不对光敏传感层20中的多个光敏传感单元21的排布方式进行限定，其设置位置只要满足：当手指触摸纹路接触层40的纹路接触面的任意位置时，都可进行指纹识别。而且，当所述纹路识别组件应用于显示装置时，多个光敏传感单元21所占的区域不影响显示装置的正常显示即可。多个光敏传感单元21例如呈矩阵排列，又例如是逐行交错排列。
第八，本公开的一些实施例不对光敏传感层20和滤光膜层30的形成顺序进行限定，所述顺序与具体工艺有关。滤光膜层30可以形成在光敏传感层20之前，也可以形成在光敏传感层20之后，也可以与光敏传感层20的形成顺序无关。
本公开实施例提供一种纹路识别组件的制备方法，通过在光敏传感层20靠近纹路接触层40一侧设置滤光膜层30，利用滤光膜层30滤除波长大于或等于λ的可见光。一方面，在手指与光敏传感层20之间存在一定距离的情况下，可以通过滤除波长大于或等于λ的可见光，减少经过手指反射的光线，确保光敏传感层20能够准确识别出的指纹信息。另一方面，由于环境光中透过手指射到光敏传感层20上的光的主要波段为波长600nm以上的长波段，通过设置λ大于或等于600nm，可以有效滤除环境光中透过手指射到光敏传感层20上的光线，从而进一步提高指纹识别的准确性。
本公开的一些实施例中，如图5所示，形成滤光膜层30还包括：分别在滤光膜层30的两侧形成第一透光层50和第二透光层60。其中，第一透光层50和第二透光层60分别与滤光膜层30接触。
本公开的一些实施例中，形成滤光膜层30，包括：依次形成K个滤光膜组31，K个滤光膜组31层叠设置。其中，K为大于或等于1的正整数。
其中，形成K个滤光膜组31中的每个滤光膜组31，包括：依次形成 第一膜层311，第二膜层312以及第一膜层311。其中，第二膜层312的折射率大于第一膜层311的折射率。第一膜层311的厚度为
Figure PCTCN2019076558-appb-000011
第二膜层312的厚度为
Figure PCTCN2019076558-appb-000012
其中，所述K的取值根据公式
Figure PCTCN2019076558-appb-000013
确定。其中，所述T为波长大于或等于λ的可见光在滤光膜层30中的透过率，且T小于所述波长大于或等于λ的可见光在滤光膜层30中的透过率阈值。所述n 1为第一透光层50的折射率，所述n 2为第二透光层60的折射率，n g为第二膜层312的折射率，n d为第一膜层311的折射率。
需要说明的是，第一，分别在滤光膜层30的两侧形成第一透光层50和第二透光层60，是指：在滤光膜层30的两侧分别设置透光层，其中，以滤光膜层30靠近光敏传感层20一侧的透光层为第一透光层50，或，以滤光膜层30远离光敏传感层20一侧的透光层为第一透光层50，均可。例如，如图5所示，第一透光层50设置在滤光膜层30靠近光敏传感层20一侧，第二透光层60设置在滤光膜层30远离光敏传感层20一侧。又例如，第一透光层50设置在滤光膜层30远离光敏传感层20一侧，第二透光层60设置在滤光膜层30靠近光敏传感层20一侧。
第二，不同滤光膜组31的第一膜层311采用相同的材料制作形成，或，采用不同的材料制作形成，均可。同理，不同滤光膜组31的第二膜层312采用相同的材料制作形成，或，采用不同的材料制作形成，均可。这也就是说，滤光膜层30由K个滤光效果相同或不同的滤光膜组31构成，均可。本公开的一些实施例不对各个滤光膜组31中的第一膜层311和第二膜层312的材料进行限定，只要每一个滤光膜组31的第二膜层312的折射率大于同一个滤光膜组31的第一膜层311的折射率即可。
此处，可选的，每一个滤光膜组31中，采用第一膜层311和第二膜层312的折射率差值比较大，并且易通过简单的工艺形成较薄的膜层的材料，作为第一膜层311和第二膜层312的材料，以使波长大于或等于λ的可见光在滤光膜层30中的透过率更低。例如，每一个滤光膜组31中，第一膜层311的材料例如是SiO或SiO 2中的一种，第二膜层312的材料例如是TiO 2或Ge中的一种。其中，当λ等于600nm时，SiO 2的折射率为1.44，SiO的折射率为1.8，TiO 2的折射率为2.12，Ge的折射率为4.0。
其中，每一个滤光膜组31中，采用涂覆或镀膜的工艺形成第一膜层311和第二膜层312。镀膜工艺例如是常温镀膜工艺，又例如是高温镀膜工艺。常温镀膜工艺例如是IAD工艺。
第三，滤光膜层30包括层叠设置的K个滤光膜组31，其中，当K＞1时，多个滤光膜组31沿光敏传感层20指向纹路接触层40的方向层叠设置。
此处，本领域的技术人员应该知道，在K表示是滤光膜组31的个数的情况下，K应该为整数。至于K的具体取值，由T小于所述波长大于或等于λ的可见光在滤光膜层30中的透过率阈值时，公式
Figure PCTCN2019076558-appb-000014
计算得出的K值来确定。图5示出了K等于3时滤光膜层30的结构图，但本公开的一些实施例中滤光膜组31的个数并不限于此，滤光膜组31的个数K还例如是2个、4个、5个、6个、8个、10个等。
第四，本领域的技术人员应该知道，由于本公开实施例可利用滤光膜层30滤除大于或等于λ的可见光，因此，在不经过滤光膜层30的情况下，从手指射到光敏传感层20上的大于或等于λ的可见光在所述滤光膜层中的透过率，必然大于所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值。其中，所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值不但与滤光膜层30及所述纹路识别组件中其他透光膜层的光 的透过率有关，还与光敏传感层20中光敏传感单元21的性能有关。
例如，所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值小于3％。又例如，所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值小于或等于1％，此时，可认为从手指射到光敏传感层20的大于或等于λ的光线的透过率几乎为零，可忽略不计，以最大程度提高指纹识别的准确性。
本公开的一些实施例采用适当的材料使第二膜层312的折射率大于第一膜层311的折射率，并利用波长大于或等于λ的可见光在滤光膜层30中的透过率小于所述波长大于或等于λ的可见光在滤光膜层30中的透过率阈值时，计算得出的K值来决定滤光膜组31的个数，从而得到滤光膜层30的具体结构，以使得滤光膜层30滤除波长大于或等于λ的可见光，该滤光膜层30的结构简单易形成。
本公开的一些实施例中，如图6a和图6b所示，所述纹路识别组件的制备方法还包括：在光敏传感层20靠近纹路接触层40一侧形成光学层70。光学层70包括多个透光孔。形成光敏传感层30，包括：形成多个光敏传感单元21，多个光敏传感单元21中的每个光敏传感单元21均与一透光孔对应。
需要说明的是，本公开的一些实施例不对形成光学层70和形成光敏传感层30的先后顺序进行限定，所述顺序与具体工艺有关。光学层70可以形成在光敏传感层20之前，也可以形成在光敏传感层20之后，也可以与光敏传感层20的形成顺序无关。
在本公开的一些实施例中，纹路识别组件包括衬底基板80，其中，所述衬底基板80既可以作为第一透光层50设置，也可以作为纹路识别组件中的一个膜层单独设置。
对于衬底基板80作为纹路识别组件中的一个膜层单独设置的方式，在本公开的一些实施例中，如图7a和7b所示，形成纹路接触层40，还包括： 形成衬底基板80，在衬底基板80远离滤光膜层30的一侧形成纹路接触层。
对于衬底基板80作为纹路识别组件中的一个膜层单独设置的方式时，第一透光层50、滤光膜层30和第二透光层60的形成方式，在本公开的一些实施例中，第一透光层50、滤光膜层30和第二透光层60依次形成在衬底基板80远离纹路接触层40的一侧。
例如，如图7a所示，滤光膜层30设置于光学层70靠近光敏传感层20的一侧。其中，第一透光层50为光学层70，第二透光层60为光学透明胶层90。
如图7a所示，当滤光膜层30设置于光学层70靠近光敏传感层20的一侧时，先在基底上形成光学层70，例如在衬底基板80上形成光学层70。之后，滤光膜层30直接形成并固定在光学层70上。最后，利用光学透明胶层90将滤光膜层30远离光学层70一侧与所述纹路识别组件中的其他膜层粘合起来，例如，利用光学透明胶层90将滤光膜层30远离光学层70一侧与光敏传感层20粘合起来。
又例如，如图8a所示，滤光膜层30设置于封装层100靠近光敏传感层20的一侧。其中，第一透光层50为封装层100，第二透光层60为光学透明胶层90。
如图8a所示，当滤光膜层30设置于封装层100靠近光敏传感层20的一侧时，先在基底上形成封装层100，例如可以在衬底基板80上形成封装层100。封装层100被配置为封装衬底基板80。若衬底基板80为OLED基板，封装层100可以保护OLED基板中的OLED器件不受空气、水分等的侵袭。之后，滤光膜层30直接形成并固定在封装层100上。最后，利用光学透明胶层90将滤光膜层30远离封装层100一侧与光敏传感层20靠近滤光膜层30一侧表面粘合起来。
可以理解的是，如果上述封装衬底基板80的封装层100还被配置为封装光敏传感层20时，封装层100与光敏传感层20之间需无缝隙，即可以 将光学透明胶层90涂覆在光敏传感层20靠近封装层100一侧，再通过光学透明胶层90将滤光膜层30远离封装层100一侧表面，与光敏传感层20靠近滤光膜层30一侧表面紧密粘合，从而确保封装层100可以对光敏传感层20起到保护。
对于衬底基板80作为纹路识别组件中的一个膜层单独设置的方式时，第一透光层50、滤光膜层30和第二透光层60的形成方式，在本公开的一些实施例中，第一透光层50、滤光膜层30和第二透光层60依次形成在光敏传感层20靠近衬底基板80的一侧。
例如，如图7b所示，滤光膜层30设置在光学层70远离光敏传感层20的一侧。其中，第一透光层50为光学层70，第二透光层60为光学透明胶层90。
如图7b所示，当滤光膜层30设置在光学层70远离光敏传感层20的一侧时，光学层70直接形成在光敏传感层20上，或者，光学层70粘附于光敏传感层20上。之后，滤光膜层30直接形成并固定在光学层70上。最后，利用光学透明胶层90将滤光膜层30远离光学层70一侧与所述纹路识别组件中的其他膜层粘合起来，例如，可以利用光学透明胶层90将滤光膜层30远离光学层70一侧与衬底基板80粘合起来。
又例如，如图8b所示，滤光膜层30设置在封装层100远离光敏传感层20的一侧。其中，第一透光层50为封装层100，第二透光层60为光学透明胶层90。
如图8b所示，当滤光膜层30设置在封装层100远离光敏传感层20的一侧时，先在光敏传感层20上形成封装层100。封装层100被配置为封装光敏传感层20，以保护光敏传感层20不受空气、水分等的侵袭。之后，滤光膜层30直接形成并固定在封装层100上。最后，利用光学透明胶层90将滤光膜层30远离封装层100一侧与所述纹路识别组件中的其他膜层粘合起来，例如，利用光学透明胶层90将滤光膜层30远离封装层100的 一侧与衬底基板80粘合起来。
本公开的一些实施例中，将滤光膜层30直接形成并固定在光学层70或封装层100上的方式，制备方法简单。并且，由于滤光膜层30直接形成并固定在光学层70或封装层100上，因此，在制备滤光膜层30的过程中，即使采用高温镀膜工艺，也不会对所述纹路识别组件中其他膜层(例如光敏传感层)的结构及性能造成影响。
对于衬底基板80作为第一透光层50设置的方式，在本公开的一些实施例中，如图9a和图9b所示，第一透光层50为衬底基板80。
对于衬底基板80作为第一透光层50设置时，滤光膜层30和第二透光层6的形成方式，在本公开的一些实施例中，滤光膜层30和第二透光层60依次形成于衬底基板80靠近纹路接触层40的一侧。其中，第二透光层60为缓冲层210。
示例性地，如图9a所示，滤光膜层30设置于衬底基板80远离光敏传感层20的一侧。在此情况下，滤光膜层30直接形成并固定在衬底基板80上。之后，在滤光膜层30远离衬底基板80一侧形成缓冲层210。
对于衬底基板80作为第一透光层50设置时，滤光膜层30和第二透光层6的形成方式，在本公开的一些实施例中，滤光膜层30和第二透光层60依次形成于衬底基板80靠近光敏传感层20的一侧。其中，第二透光层60为光学透明胶层90。
示例性地，如图9b所示，滤光膜层30设置在衬底基板80靠近光敏传感层20的一侧。在此情况下，滤光膜层30直接形成并固定在衬底基板80上。之后，利用光学透明胶层90将滤光膜层30远离衬底基板80一侧与所述纹路识别组件中的其他膜层粘合起来，例如，利用光学透明胶层90将滤光膜层30远离衬底基板80一侧与光敏传感层20或光学层70粘合起来。当然，在衬底基板80上形成滤光膜层30之后，还可以在滤光膜层30远离衬底基板80一侧直接形成光学层70或所述纹路识别组件中的其他膜层。
本公开实施例中，将滤光膜层30直接形成并固定在衬底基板80上的方式，制备方法简单。并且由于滤光膜层30直接形成并固定在衬底基板80上，因此，在制备滤光膜层30的过程中，即使采用高温镀膜工艺，也不会对所述纹路识别组件中其他膜层(例如光敏传感层)的结构及性能造成影响。
在本公开的一些实施例中，形成光敏传感层20，包括：依次形成第一电极层201、光敏材料层202、以及第二电极层203。其中，第一电极层201的材料例如是ITO等透明导电材料。
此处，第一电极层201以及第二电极层203的结构参考前述实施例中的结构，此处不再赘述。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (17)

  1. 一种纹路识别组件，包括：
    光敏传感层；
    纹路接触层；以及，
    设置于所述光敏传感层靠近所述纹路接触层一侧的滤光膜层，所述滤光膜层被配置为滤除波长大于或等于λ的可见光；
    其中，所述λ的取值范围大于或等于600nm。
  2. 根据权利要求1所述的纹路识别组件，其中，
    所述滤光膜层的两侧分别设置有第一透光层和第二透光层，所述第一透光层和所述第二透光层分别与所述滤光膜层接触；
    所述滤光膜层包括层叠设置的K个滤光膜组，其中，K为大于或等于1的正整数；
    所述K个滤光膜组中的每个所述滤光膜组包括：
    相对设置的两个第一膜层；
    以及，设置于两个所述第一膜层之间的第二膜层；
    其中，所述第二膜层的折射率大于所述第一膜层的折射率；
    所述第一膜层的厚度为
    Figure PCTCN2019076558-appb-100001
    所述第二膜层的厚度为
    Figure PCTCN2019076558-appb-100002
    所述K的取值根据公式
    Figure PCTCN2019076558-appb-100003
    确定；
    其中，所述T为波长大于或等于λ的可见光在所述滤光膜层中的透过率，且T小于所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值；所述n 1为所述第一透光层的折射率，所述n 2为所述第二透光层的折射率，所述n g为所述第二膜层的折射率，所述n d为所述第一膜层的折射率。
  3. 根据权利要求2所述的纹路识别组件，其中，所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值小于或等于3％。
  4. 根据权利要求2或3所述的纹路识别组件，其中，
    所述第一膜层的材料包括SiO或SiO 2中的一种；
    所述第二膜层的材料包括TiO 2或Ge中的一种。
  5. 根据权利要求2所述的纹路识别组件，其中，所述第一透光层包括衬底基板，所述第二透光层包括光学透明胶层或缓冲层。
  6. 根据权利要求2所述的纹路识别组件，其特征在于，所述纹路识别组件还包括设置于所述滤光膜层靠近所述纹路接触层一侧的衬底基板；
    其中，所述第一透光层包括光学层或封装层；
    所述第二透光层包括光学透明胶层。
  7. 根据权利要求1-5任一项所述的纹路识别组件，其特征在于，所述纹路识别组件还包括设置于所述光敏传感层靠近所述纹路接触层一侧的光学层；所述光学层包括多个透光孔；
    所述光敏传感层包括多个光敏传感单元，多个光敏传感单元中的每个所述光敏传感单元均与一透光孔对应。
  8. 根据权利要求1-6任一项所述的纹路识别组件，其中，沿所述光敏传感层靠近所述滤光膜层的方向，所述光敏传感层包括依次设置的第一电极层、光敏材料层以及第二电极层。
  9. 一种显示装置，包括：
    发光层；以及，
    权利要求1-8任一项所述的纹路识别组件；
    其中，所述纹路识别组件中的滤光膜层设置于所述发光层远离所述纹路识别组件中的纹路接触层的一侧。
  10. 根据权利要求9所述的显示装置，其中，所述显示装置包括OLED显示面板，所述OLED显示面板包括阵列基板，所述阵列基板包括衬底；
    所述纹路识别组件包括衬底基板，所述衬底基板包括所述阵列基板的衬底。
  11. 一种纹路识别组件的制备方法，其中，包括：
    形成光敏传感层；
    形成滤光膜层；
    形成纹路接触层；
    其中，所述滤光膜层位于所述光敏传感层和所述纹路接触层之间，所述滤光膜层被配置为滤除波长大于或等于λ的可见光；
    其中，所述λ的取值范围大于或等于600nm。
  12. 根据权利要求11所述的纹路识别组件的制备方法，其中，形成所述滤光膜层还包括：分别在所述滤光膜层的两侧形成第一透光层和第二透光层；
    其中，所述第一透光层和所述第二透光层分别与所述滤光膜层接触。
  13. 根据权利要求12所述的纹路识别组件的制备方法，其中，形成所述滤光膜层，包括：
    依次形成K个滤光膜组，K个滤光膜组层叠设置；其中，K为大于或等于1的正整数；
    其中，形成所述K个滤光膜组中的每个所述滤光膜组，包括：依次形成第一膜层、第二膜层以及第一膜层；
    其中，所述第二膜层的折射率大于所述第一膜层的折射率；
    所述第一膜层的厚度为
    Figure PCTCN2019076558-appb-100004
    所述第二膜层的厚度为
    Figure PCTCN2019076558-appb-100005
    所述K的取值根据公式
    Figure PCTCN2019076558-appb-100006
    确定；
    其中，所述T为波长大于或等于λ的可见光在所述滤光膜层中的透过率，且T小于所述波长大于或等于λ的可见光在所述滤光膜层中的透过率阈值；所述n 1为所述第一透光层的折射率，所述n 2为所述第二透光层的折射率，所述n g为所述第二膜层的折射率，所述n d为所述第一膜层的折射率。
  14. 根据权利要求12所述的纹路识别组件的制备方法，其中，
    所述第一透光层包括衬底基板；
    所述滤光膜层和所述第二透光层依次形成在所述衬底基板靠近所述纹路接触层的一侧；其中，所述第二透光层包括缓冲层；
    或，所述滤光膜层和所述第二透光层依次形成在所述衬底基板靠近所述光敏传感层的一侧；其中，所述第二透光层包括光学透明胶层。
  15. 根据权利要求12所述的纹路识别组件的制备方法，其中，形成纹路接触层，还包括：形成衬底基板，在所述衬底基板远离所述滤光膜层的一侧形成纹路接触层；
    所述第一透光层、所述滤光膜层和所述第二透光层依次形成在所述衬底基板远离所述纹路接触层的一侧；
    或，所述第一透光层、所述滤光膜层和所述第二透光层依次形成在光敏传感层靠近所述衬底基板的一侧；
    其中，所述第一透光层包括光学层或封装层；所述第二透光层包括光学透明胶层。
  16. 根据权利要求11～14任一项所述的纹路识别组件的制备方法，其中，所述纹路识别组件的制备方法还包括：
    在所述光敏传感层靠近所述纹路接触层的一侧形成光学层；所述光学层包括多个透光孔；
    形成所述光敏传感层，包括：形成多个光敏传感单元，所述多个光敏传感单元中的每个光敏传感单元均与一透光孔对应。
  17. 根据权利要求11-15任一项所述的纹路识别组件的制备方法，其中，形成所述光敏传感层，包括：
    依次形成第一电极层、光敏材料层以及第二电极层。
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