WO2019216314A1 - Substrate treatment system and substrate treatment method - Google Patents

Substrate treatment system and substrate treatment method Download PDF

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Publication number
WO2019216314A1
WO2019216314A1 PCT/JP2019/018266 JP2019018266W WO2019216314A1 WO 2019216314 A1 WO2019216314 A1 WO 2019216314A1 JP 2019018266 W JP2019018266 W JP 2019018266W WO 2019216314 A1 WO2019216314 A1 WO 2019216314A1
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WO
WIPO (PCT)
Prior art keywords
substrate
holding
holding unit
cleaning
processing
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Application number
PCT/JP2019/018266
Other languages
French (fr)
Japanese (ja)
Inventor
直人 坂元
征二 中野
浩樹 原田
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP2020518301A priority Critical patent/JP6983311B2/en
Publication of WO2019216314A1 publication Critical patent/WO2019216314A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/06Work supports, e.g. adjustable steadies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/04Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present disclosure relates to a substrate processing system and a substrate processing method.
  • Patent Document 1 discloses a conveying method for conveying a brittle workpiece after grinding.
  • the conveying method includes an adhesion release step and an unloading step.
  • the close contact releasing step fluid is ejected from the holding surface of the chuck table, and the brittle workpiece sucked and held by the conveying means is separated from the chuck table at a first speed.
  • the unloading step following the execution of the close contact releasing step, the conveying means is separated from the chuck table at a second speed higher than the first speed, and the brittle workpiece is unloaded from the chuck table.
  • the technique according to the present disclosure appropriately transports a substrate in a substrate processing system that processes a processed surface of the substrate.
  • One aspect of the present disclosure is a substrate processing system that processes a processed surface of a substrate, and holds the non-processed surface opposite to the processed surface of the substrate when the processed surface of the substrate is processed.
  • a liquid supply unit that supplies a liquid to the holding surface of the processing holding unit, a transfer holding unit that holds the processed surface of the substrate when the substrate is transferred, and the transfer holding unit
  • a moving mechanism that moves in a direction and a vertical direction, and a processing control unit that controls the processing holding unit, the liquid supply unit, the transport holding unit, and the moving mechanism.
  • a holding step of holding the processed surface by the holding unit for conveyance with respect to the substrate on which the non-processed surface is held by the holding unit, and then the holding surface of the processing holding unit from the liquid supply unit A liquid supply step of supplying a liquid between the processing surface, and then the liquid is The ascending step of ascending the substrate held by the transfer holding unit by the moving mechanism to a height that does not separate from the plate, and then the transfer holding by the moving mechanism in a state where the liquid is in contact with the substrate. And a moving step of moving the substrate held by the part in the horizontal direction.
  • a substrate can be appropriately transported in a substrate processing system that processes a processed surface of a substrate.
  • a back surface of the substrate is ground to a semiconductor substrate (hereinafter referred to as a substrate) on which a plurality of devices such as electronic circuits are formed on the surface, thereby thinning the substrate. ing.
  • Patent Document 1 described above discloses a method for conveying a brittle workpiece (substrate) after grinding. Specifically, first, the first surface of the brittle workpiece held on the chuck table is ground with a grinding wheel to thin the brittle workpiece to a predetermined thickness. Here, since the thin brittle workpiece is brittle, it may be damaged when it is unloaded from the chuck table. Therefore, in the method disclosed in Patent Document 1, the contact release step and the carry-out step described above are performed. That is, a fluid, a mixed fluid of pure water and air is ejected from the holding surface of the chuck table, and the brittle workpiece is separated from the chuck table at a two-stage speed. Thereby, it is aimed to suppress damage to the brittle workpiece during unloading.
  • FIG. 1 is a plan view schematically showing the outline of the configuration of the substrate processing system 1.
  • the substrate W is thinned.
  • the substrate W is a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer.
  • a device (not shown) is formed on the surface of the substrate W (hereinafter referred to as a non-processed surface Wn), and a protective material for protecting the device, for example, a protective tape (not shown) is further provided on the surface. It is pasted.
  • a predetermined processing such as grinding is performed on the back surface of the substrate W (hereinafter referred to as a processing surface Wg), and the substrate is thinned.
  • the substrate processing system 1 has a configuration in which a carry-in station 2, a carry-out station 3, a processing apparatus 4, a post-processing apparatus 5, and a transfer station 6 are connected.
  • the carry-in station 2 stores the substrate W before processing in the cassette C, and carries a plurality of substrates W into the substrate processing system 1 from the outside in units of cassettes.
  • the unloading station 3 stores the processed substrates W in the cassette C, and unloads a plurality of substrates W from the substrate processing system 1 to the outside in units of cassettes.
  • the processing apparatus 4 thins the substrate W by processing it.
  • the post-processing apparatus 5 performs post-processing of the substrate W after processing.
  • the transfer station 6 transfers the substrate W among the carry-in station 2, the processing apparatus 4 and the post-processing apparatus 5.
  • the carry-in station 2, the transfer station 6, and the processing device 4 are arranged in this order in the Y-axis direction on the X-axis negative direction side.
  • the carry-out station 3 and the post-processing device 5 are arranged in this order in the Y-axis direction on the X-axis positive direction side.
  • the loading station 2 is provided with a cassette mounting table 10.
  • a cassette mounting table 10 In the illustrated example, a plurality of, for example, two cassettes C can be placed on the cassette mounting table 10 in a line in the X-axis direction.
  • the carry-out station 3 has the same configuration as the carry-in station 2.
  • the unloading station 3 is provided with a cassette mounting table 20.
  • a cassette mounting table 20 For example, two cassettes C can be mounted in a row in the X-axis direction on the cassette mounting table 20.
  • the carry-in station 2 and the carry-out station 3 may be integrated into one carry-in / out station. In such a case, a common cassette mounting table is provided in the carry-in / out station.
  • processing such as grinding or cleaning is performed on the substrate W.
  • the configuration of the processing device 4 will be described later.
  • post-processing is performed on the substrate W processed by the processing apparatus 4.
  • the post-processing for example, a mounting process for holding the substrate W on the dicing frame via a dicing tape, a peeling process for peeling the protective tape attached to the substrate W, and the like are performed.
  • the post-processing apparatus 5 transports the substrate W that has been post-processed and held on the dicing frame to the cassette C of the unloading station 3.
  • a known apparatus is used for each of the mounting process and the peeling process performed by the post-processing apparatus 5.
  • the transfer station 6 is provided with a substrate transfer area 30.
  • a substrate transfer device 32 is provided in the substrate transfer region 30 and is movable on a transfer path 31 extending in the X-axis direction.
  • the substrate transfer device 32 includes a transfer fork 33 and a transfer pad 34 as a substrate holding unit that holds the substrate W.
  • the transport fork 33 has its tip branched into two to hold the substrate W by suction.
  • the transport fork 33 transports the substrate W before the grinding process.
  • the transport pad 34 has a circular shape with a diameter longer than the diameter of the substrate W in plan view, and holds the substrate W by suction.
  • the transport pad 34 transports the substrate W after the grinding process.
  • the transport fork 33 and the transport pad 34 are configured to be movable in the horizontal direction, the vertical direction, the horizontal axis, and the vertical axis, respectively.
  • the substrate processing system 1 is provided with a control unit 40.
  • the control unit 40 is a computer, for example, and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling the processing of the substrate W in the substrate processing system 1.
  • the program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize substrate processing described later in the substrate processing system 1.
  • the program may be recorded on a computer-readable storage medium H and may be installed in the control unit 40 from the storage medium H.
  • the processing apparatus 4 includes a rotary table 100, a transport unit 110, an alignment unit 120, a first cleaning unit 130, a second cleaning unit 140, a rough grinding unit 150, a middle grinding unit 160, and a finish grinding unit 170. Yes.
  • the rotary table 100 is configured to be rotatable by a rotation mechanism (not shown). On the turntable 100, four processing holding portions 101 that hold the non-processed surface Wn of the substrate W by suction are provided. The processing holding portions 101 are arranged on the same circumference as the rotary table 100, that is, every 90 degrees. The four processing holders 101 are movable to the delivery position A0 and the processing positions A1 to A3 as the turntable 100 rotates.
  • the delivery position A0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the turntable 100, and the second cleaning unit 140, alignment is on the Y-axis negative direction side of the delivery position A0.
  • the unit 120 and the first cleaning unit 130 are arranged side by side.
  • the alignment unit 120 and the first cleaning unit 130 are stacked in this order from above.
  • the first machining position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the turntable 100, and the rough grinding unit 150 is disposed.
  • the second machining position A2 is a position on the X-axis negative direction side and the Y-axis positive direction side of the turntable 100, and the intermediate grinding unit 160 is disposed.
  • the third machining position A3 is a position on the X-axis negative direction side and the Y-axis negative direction side of the turntable 100, and the finish grinding unit 170 is disposed.
  • the processing holding portion 101 is held on a holding portion base 102.
  • the processing holder 101 and the holder base 102 are configured to be rotatable by a rotation mechanism 103.
  • the rotation mechanism 103 is provided, for example, through a through hole 100a formed in the turntable 100.
  • the processing holding unit 101 is connected to a supply pipe 104 that supplies at least a liquid or a gas to the holding surface 101 a of the substrate W of the processing holding unit 101.
  • the supply pipe 104 is connected to the processing holding unit 101 through the inside of the rotation mechanism 103.
  • the supply pipe 104 is connected to each of the four processing holding portions 101.
  • Each supply pipe 104 is provided with a valve 104 a that controls supply of liquid or gas to each processing holding unit 101.
  • the supply pipe 104 is branched into a liquid supply pipe 104b and a gas supply pipe 104c on the downstream side.
  • a liquid supply unit 105 is connected to the liquid supply pipe 104b.
  • the liquid supply unit 105 stores a liquid, for example, pure water, and supplies the liquid to the holding surface 101a.
  • a gas supply unit 106 is connected to the gas supply pipe 104c.
  • the gas supply unit 106 stores a gas, for example, air or an inert gas, and supplies the gas to the holding surface 101a
  • a porous chuck is used for the processing holding portion 101.
  • a suction tube 107 for sucking the substrate W is connected to the processing holding unit 101 in order to suck and hold the substrate W by the holding surface 101a.
  • the suction tube 107 is connected to the processing holding portion 101 through the inside of the rotation mechanism 103. Further, the suction tube 107 is connected to each of the four processing holding portions 101.
  • Each suction tube 107 is provided with a valve 107 a that controls suction in each processing holding portion 101.
  • a suction device 108 for sucking the substrate W is connected to the suction tube 107. In order to prevent the porous chuck from being clogged, the liquid is supplied from the liquid supply unit 105 when the substrate W is not held by the processing holding unit 101.
  • the supply pipe 104 common to the liquid supply unit 105 and the gas supply unit 106 is used.
  • the liquid supply pipe 104b and the gas supply pipe 104c may be directly connected to the processing holding unit 101, respectively. Good.
  • a valve (not shown) is provided in each of the liquid supply pipe 104b and the gas supply pipe 104c.
  • the common liquid supply unit 105 and the gas supply unit 106 are provided in the four processing holding units 101, but the liquid supply unit 105 and the gas supply unit 106 are individually provided for each processing holding unit 101. Each may be provided.
  • the transport unit 110 is an articulated robot including a plurality of, for example, three arms 111-113.
  • the three arms 111 to 113 are connected by joint portions (not shown). With these joint portions, of the three arms 111 to 113, the first arm 111 at the distal end and the second arm 112 in the middle are each configured to be pivotable about the proximal end portion.
  • the third arm 113 at the base end is attached to a moving mechanism 114 that moves the arms 111 to 113 in the vertical direction.
  • a transfer holding unit 115 that holds and holds a substrate W described later is movable in the horizontal direction and the vertical direction.
  • the first arm 111 is provided with a transport holding unit 115 that holds the substrate W by suction.
  • a transport holding unit 115 that holds the substrate W by suction.
  • a porous chuck is used for the conveyance holding unit 115.
  • the transfer holder 115 has a circular shape having a diameter longer than the diameter of the substrate W in plan view.
  • the transport holding unit 115 sucks and holds the entire processing surface Wg of the substrate W on the holding surface 115a.
  • the transport holding unit 115 is configured to be rotatable by a rotation mechanism 111 a provided on the first arm 111.
  • a tilting mechanism 116 and an elastic member 117 are provided via a support plate 118.
  • the tilt mechanism 116 is provided between the first arm 111 and the support plate 118.
  • the elastic member 117 is provided between the conveyance holding portion 115 and the support plate 118.
  • the tilt mechanism 116 makes the transport holding portion 115 tiltable in a side view.
  • the configuration of the tilt mechanism 116 is arbitrary, for example, the tilt mechanism 116 includes a biasing member (not shown) that biases the support plate 118 (the transport holding portion 115) in the separation direction with respect to the first arm 111.
  • the tilting mechanism 116 for example, when the transport holding unit 115 receives the substrate W, the transport holding unit 115 can be tilted along the tilt even if the substrate W is not flat (horizontal). Further, for example, when the transport holding unit 115 delivers the substrate W, the transport holding unit 115 can be tilted along the tilt even if the delivery destination is not flat (horizontal).
  • the substrate W can be appropriately received (delivered) by tilting the transport holding portion 115.
  • the tilting mechanism 116 may further include a mechanism for fixing the conveyance holding portion 115.
  • the transfer holding unit 115 can be fixed during transfer of the substrate W.
  • the substrate W can be received (delivered) and transported appropriately.
  • a plurality of elastic members 117 are provided, for example, on the outer circumference of the conveyance holder 115 and on the concentric circles of the conveyance holder 115.
  • the elastic member 117 is not particularly limited as long as it has elasticity.
  • a spring is used.
  • the elastic member 117 can absorb the impact when the holding unit 115 for transport receives or transfers the substrate W, for example. As a result, it is possible to avoid a strong pressing force acting on the substrate W held by the transfer holding unit 115.
  • the transport unit 110 having the above configuration can transport the substrate W to the delivery position A0, the alignment unit 120, the first cleaning unit 130, and the second cleaning unit 140.
  • the alignment unit 120 adjusts the horizontal direction of the substrate W before the grinding process.
  • the position of the notch portion of the substrate W is detected by a detection unit (not shown) while rotating the substrate W held by a spin chuck (not shown), thereby adjusting the position of the notch portion and the substrate. Adjust the horizontal direction of W.
  • the processed surface Wg of the substrate W after the grinding process is cleaned, more specifically, spin cleaning.
  • the cleaning liquid is supplied from the cleaning liquid nozzle (not shown) to the processing surface Wg of the substrate W while rotating the substrate W held on the spin chuck (not shown). Then, the supplied cleaning liquid diffuses on the processing surface Wg, and the processing surface Wg is cleaned.
  • the second cleaning unit 140 cleans the non-processed surface Wn of the substrate W that has been ground and is held by the transfer holding unit 115 of the transfer unit 110 and holds the holding surface of the transfer holding unit 115. 115a is washed.
  • the non-processed surface Wn and the holding surface 115a are cleaning surfaces cleaned by the second cleaning unit 140.
  • the second cleaning unit 140 has a processing container 141. Inside the processing container 141, a sponge cleaning tool 142 having a cleaning liquid nozzle, an air nozzle 143, a stone cleaning tool 144 (grinding stone), and a brush cleaning tool 145 are provided.
  • Each of the sponge cleaning tool 142, the air nozzle 143, the stone cleaning tool 144, and the brush cleaning tool 145 is configured to be movable in the vertical direction by an elevating mechanism (not shown).
  • the sponge cleaning tool 142 has, for example, a sponge extending longer than the diameter of the substrate W, and a cleaning liquid such as pure water can be supplied to the sponge to clean the non-processed surface Wn.
  • the air nozzle 143 sprays air onto the non-processed surface Wn of the substrate W to dry the non-processed surface Wn.
  • the cleaning of the non-processed surface Wn with the sponge and the cleaning liquid and the drying of the non-processed surface Wn with air are performed in a state where the substrate W is held by the transfer holding unit 115 and the transfer holding unit 115 (substrate W ) While rotating. Thereby, the entire non-processed surface Wn of the substrate W is cleaned.
  • Each of the stone cleaning tool 144 and the brush cleaning tool 145 extends, for example, longer than the diameter of the holding surface 115a of the transfer holding unit 115 of the transfer unit 110, and abuts on the holding surface 115a for cleaning.
  • the cleaning of the transport holding unit 115 by the stone cleaning tool 144 and the brush cleaning tool 145 is performed while rotating the transport holding unit 115 by the rotation mechanism 111a. As a result, the entire holding surface 115a of the transfer holding unit 115 is cleaned.
  • the processed surface Wg of the substrate W is roughly ground.
  • the rough grinding unit 150 includes a rough grinding portion 151 having a circular grinding wheel (not shown) that is rotatable in an annular shape.
  • the rough grinding portion 151 is configured to be movable in the vertical direction and the horizontal direction along the support column 152. Then, the processing surface of the substrate W is rotated by rotating the processing holding portion 101 and the rough grinding wheel while the processing surface Wg of the substrate W held by the processing holding portion 101 is in contact with the rough grinding wheel. Roughly grind Wg.
  • the processing surface Wg of the substrate W is ground.
  • the intermediate grinding unit 160 has an intermediate grinding part 161 provided with an annular grinding wheel (not shown) that is rotatable. Further, the intermediate grinding portion 161 is configured to be movable in the vertical direction and the horizontal direction along the support column 162. The grain size of the medium grinding wheel is smaller than the grain size of the coarse grinding wheel. Then, while the processing surface Wg of the substrate W held by the processing holding unit 101 is in contact with the intermediate grinding wheel, the processing holding unit 101 and the intermediate grinding wheel are rotated, so that the processing surface Wg is set to the middle. Grind.
  • the finish grinding unit 170 finish-grinds the processed surface Wg of the substrate W.
  • the finish grinding unit 170 has a finish grinding portion 171 provided with a finish grinding wheel (not shown) that is annular and rotatable. Further, the finish grinding part 171 is configured to be movable in the vertical direction and the horizontal direction along the support column 172. The grain size of the finish grinding wheel is smaller than the grain size of the medium grinding wheel. Then, the processing surface Wg is finished by rotating the processing holding portion 101 and the finishing grinding wheel while the processing surface Wg of the substrate W held by the processing holding portion 101 is in contact with the finishing grinding wheel. Grind.
  • a cassette C storing a plurality of substrates W is placed on the cassette placement table 10 of the carry-in station 2.
  • the substrate W is stored so that the non-processed surface Wn of the substrate W to which the protective tape is attached faces upward.
  • the substrate W in the cassette C is taken out by the transfer fork 33 of the substrate transfer device 32 and transferred to the processing device 4.
  • the front and back surfaces are reversed so that the processing surface Wg of the substrate W faces upward by the transport fork 33.
  • the substrate W transferred to the processing apparatus 4 is transferred to the alignment unit 120.
  • the horizontal direction of the substrate W is adjusted (step S1 in FIG. 5).
  • the substrate W is transported from the alignment unit 120 to the delivery position A0 by the transport unit 110, and is delivered to the processing holding unit 101 at the delivery position A0.
  • the non-processed surface Wn of the substrate W is held.
  • the tilt mechanism 116 makes the transport holder 115 tiltable.
  • the elastic member 117 absorbs the impact. Thereby, the reception and delivery of the substrate W can be performed appropriately.
  • the processing holder 101 is moved to the first processing position A1. Then, the processed surface Wg of the substrate W is roughly ground by the rough grinding unit 150 (step S2 in FIG. 5).
  • the processing holding portion 101 is moved to the second processing position A2. Then, the processing surface Wg of the substrate W is subjected to intermediate grinding by the intermediate grinding unit 160 (step S3 in FIG. 5).
  • the processing holding portion 101 is moved to the third processing position A3. Then, the processed surface Wg of the substrate W is finish-ground by the finish grinding unit 170 (step S4 in FIG. 5).
  • step S5 cleaning is performed to remove dirt on the processed surface Wg to some extent.
  • step S6 the substrate W is transported from the delivery position A0 to the second cleaning unit 140 by the transport unit 110 (step S6 in FIG. 5).
  • the transport unit 110 receives the substrate W from the delivery position A0 in step S6 will be described.
  • the transfer holding unit 115 of the transfer unit 110 is moved above the substrate W sucked and held by the processing holding unit 101 and arranged to face the substrate W.
  • the transport holding unit 115 is lowered, and the processing surface Wg of the substrate W is sucked and held by the transport holding unit 115.
  • the holding mechanism 115 for conveyance is made tiltable by the tilt mechanism 116.
  • the elastic member 117 absorbs the impact when the substrate W is sucked and held. Thereby, the adsorption
  • the process shown in FIG. 6B may be referred to as a holding process. Further, in this holding step, when the substrate W is sucked and held by the transfer holding unit 115, the processing holding unit 101 sucks and holds the substrate W at any timing before gas is supplied from the gas supply unit 106 described later. To release.
  • gas is supplied from the gas supply unit 106 between the holding surface 101a of the processing holding unit 101 and the non-processed surface Wn of the substrate W.
  • the substrate W is peeled from the processing holder 101.
  • the liquid is supplied from the liquid supply unit 105 in a state where the substrate W is not held by the processing holding unit 101.
  • the liquid remains in the supply pipe 104, and the liquid is supplied together with the supply of gas.
  • a film of the liquid L is formed between the holding surface 101 a of the processing holding unit 101 and the non-processed surface Wn of the substrate W.
  • the process shown in FIG. 6C may be referred to as a liquid supply process.
  • the liquid L is supplied between the holding surface 101a of the processing holding unit 101 and the non-processed surface Wn of the substrate W by supplying gas from the gas supply unit 106.
  • the liquid may be supplied from 105.
  • the substrate W held by the transfer holding unit 115 is raised to a height at which the liquid L is not separated from the substrate W. Note that the process shown in FIG. 6C may be referred to as an ascending process.
  • the substrate W held by the transfer holding unit 115 is moved in the horizontal direction while the liquid L is in contact with the substrate W. If it does so, the contact area of the board
  • the process shown in FIG. 6D may be referred to as a movement process.
  • the timing of raising the substrate W is not limited to this embodiment.
  • the substrate W may be raised when the substrate W moves in the horizontal direction and the entire substrate W is positioned outside the processing holder 101 in plan view.
  • the substrate W is moved up in the horizontal direction and then raised, but the substrate W may be moved obliquely upward. That is, the moving process shown in FIG. 6 (d) and the ascending process shown in FIG. 6 (e) may be performed simultaneously.
  • the substrate W may be separated from the liquid L only by moving in the horizontal direction without raising the substrate W.
  • step S6 the transport unit 110 receives the substrate W from the delivery position A0, and the substrate is transported from the delivery position A0 to the second cleaning unit 140.
  • the non-processed surface Wn of the substrate W is cleaned by the sponge cleaning tool 142 in a state where the substrate W is rotated and held by the transport holding unit 115 by the rotation mechanism 111a as shown in FIG. (Step S7 in FIG. 5).
  • air is jetted from the air nozzle 143 to the non-processed surface Wn, and the non-processed surface Wn is dried.
  • the transfer holding unit 115 is cleaned using the stone cleaning tool 144 and the brush cleaning tool 145 of the second cleaning unit 140. . (Step T1 in FIG. 5).
  • the conveyance holder 115 is cleaned by the stone cleaner 144 and the brush cleaner 145 while rotating the conveyance holder 115 by the rotation mechanism 111a.
  • the conveyance holding unit 115 may be cleaned by either one of the stone cleaning tool 144 and the brush cleaning tool 145 or by both.
  • the transport holding unit 115 is cleaned at an arbitrary timing up to step S6.
  • the substrate W is transported from the second cleaning unit 140 to the first cleaning unit 130 by the transport unit 110.
  • the tilting mechanism 116 makes the transport holding unit 115 tiltable.
  • the elastic member 117 absorbs an impact when the substrate W is delivered. Thereby, the delivery of the board
  • the processed surface Wg of the substrate W is finished and cleaned with the cleaning liquid using a cleaning liquid nozzle (not shown) (step S8 in FIG. 5).
  • step S8 the processed surface Wg is washed to a desired cleanliness and dried.
  • the substrate W is transported from the first cleaning unit 130 to the post-processing device 5 by the substrate transport device 32.
  • the post-processing apparatus 5 performs post-processing such as mounting processing for holding the substrate W on the dicing frame and peeling processing for peeling the protective tape attached to the substrate W (step S9 in FIG. 5).
  • the substrate W that has been subjected to all the processes is transferred to the cassette C of the cassette mounting table 20 of the unloading station 3.
  • a series of substrate processing in the substrate processing system 1 is completed.
  • the substrate processing system 1 that processes the substrate W holds the non-processed surface Wn opposite to the processed surface Wg of the substrate W when processing the processed surface Wg of the substrate W.
  • a moving mechanism 114 (111 to 113) for moving the transport holding unit 115 in the horizontal and vertical directions, a processing holding unit 101, a liquid supply unit 105, a transport holding unit 115, and a moving mechanism 114 (111 to 113).
  • the substrate processing method in the substrate processing system 1 includes a holding step of holding the processed surface Wg by the transfer holding unit 115 with respect to the substrate W on which the non-processed surface Wn is held by the processing holding unit 101 (FIG. 6 ( b)), and thereafter, a liquid supply step of supplying the liquid L between the holding surface 101a of the processing holding unit 101 and the non-processed surface Wn of the substrate W from the liquid supply unit 105 (FIG. 6C), and thereafter An ascending step of raising the substrate W held by the transfer holder 115 by the moving mechanism 114 to a height at which the liquid L is not separated from the substrate W (FIG. 6C), and then the liquid L contacts the substrate W. In this state, there is a moving step (FIG.
  • the substrate W held by the transfer holding unit 115 is raised by the moving mechanism 114.
  • the movement step shown in FIG. 6D when the entire substrate W is positioned outside the processing holding portion 101 in a plan view, it is transferred by the movement mechanism 114 as shown in FIG. The substrate W held by the holding unit 115 is raised. In either case, the tension generated at the interface between the substrate W and the liquid L can be reduced.
  • the outer peripheral portion of the substrate W when the outer peripheral portion of the substrate W is positioned outside the processing holding portion 101 in plan view in the moving step shown in FIG. It is discharged from the outside. Thereby, the tension generated at the interface between the substrate W and the liquid L can be further reduced.
  • the substrate processing system 1 includes the gas supply unit 106 that supplies gas to the holding surface 101 a of the processing holding unit 101. 6C, a gas is supplied from the gas supply unit 106 between the holding surface 101a of the processing holding unit 101 and the non-processed surface Wn of the substrate W. Thereby, the board
  • substrate W can be appropriately peeled from the holding part 101 for a process.
  • the substrate processing system 1 includes the tilt mechanism 116 that allows the transport holding unit 115 to tilt in a side view, and the elastic member 117 provided on the transport holding unit 115.
  • the tilting mechanism 116 can tilt the transport holding unit 115 when the transport holding unit 115 receives or transfers the substrate W.
  • the elastic member 117 can absorb the impact when the transport holding unit 115 receives or transfers the substrate W. As a result, the substrate W can be appropriately received (delivered).
  • the processing holding unit 101 is rotated by a rotating mechanism (not shown), and the conveying holding unit 115 is moved by the rotating mechanism 111a.
  • the substrate W held by the transfer holding unit 115 may be moved in the horizontal direction by the moving mechanism while being rotated.
  • the tension generated at the interface between the substrate W and the liquid L can be further reduced. Any one of the processing holding unit 101 and the conveyance holding unit 115 may be rotated, that is, the processing holding unit 101 and the conveyance holding unit 115 may be relatively rotated.
  • the transport holder 115 is reciprocated in the horizontal direction by the moving mechanism in a state where the sponge cleaning tool 142 is in contact with the non-processed surface Wn of the substrate W in step S7.
  • the non-processed surface Wn may be cleaned by moving.
  • the transfer holding unit 115 in step T1, in a state where the stone cleaning tool 144 or the brush cleaning tool 145 is in contact with the holding surface 115a, the transfer holding unit 115 is reciprocated in the horizontal direction by the moving mechanism, thereby holding the holding surface 115a. May be washed.
  • Japanese Patent Application Laid-Open No. 2003-45841 discloses a cleaning device that cleans the suction surface of a suction pad for sucking and conveying a workpiece.
  • the cleaning device includes a grinding plate having a grinding surface for grinding the suction surface, and swing drive means for swinging the grinding plate in a direction in which the grinding surface extends. Then, the suction surface is cleaned by moving the suction surface in a direction substantially orthogonal to the extending direction of the grinding plate while bringing the suction surface into contact with the grinding surface of the grinding plate rocked by the rocking drive means.
  • the suction pad may be provided with an elastic member in order to absorb an impact when sucking the workpiece. Depending on the arrangement of the elastic member, the pressure applied to the suction pad becomes more uneven.
  • step S7 or step T1 the pressure applied to the non-processed surface Wn or the holding surface 115a is determined when the transport holding unit 115 is reciprocated to clean the non-processed surface Wn or the holding surface 115a. Keep it constant.
  • step S7 in the second cleaning unit 140, with the sponge cleaning tool 142 in contact with the non-processed surface Wn of the substrate W as shown in FIG.
  • the non-processed surface Wn is cleaned by reciprocating.
  • FIG. 8 shows a state where the sponge cleaning tool 142 contacts the central portion of the substrate W.
  • the position of the center portion of the substrate W at this time is referred to as a center position A.
  • (B) and (c) show how the sponge cleaning tool 142 abuts on the outer periphery of the substrate W, respectively.
  • the position of the central portion of the substrate W at this time is referred to as center positions B and C.
  • the movement of the central part of the non-processed surface Wn of the substrate W is schematically shown together with its height position.
  • the pressure applied to the substrate W when the sponge cleaning tool 142 contacts the outer peripheral portion of the substrate W is the central portion of the substrate W. It becomes larger than the pressure applied to. Therefore, as shown in FIG. 8, the height position of the non-processed surface Wn of the substrate W at the center positions B and C is set higher than the height position of the non-processed surface Wn of the substrate W at the center position A.
  • the adjustment of the height position is performed, for example, by moving the conveyance holder 115 in the vertical direction by the moving mechanism 114.
  • the pressure applied to the non-processed surface Wn of the substrate W when the sponge cleaning tool 142 contacts the outer peripheral portion of the substrate W can be reduced.
  • the pressure applied to the non-processed surface Wn can be made constant within the surface, and damage to the substrate W due to pressure nonuniformity can be suppressed.
  • by reducing the pressure applied to the outer peripheral portion of the substrate W in this way it is possible to further suppress the outer peripheral portion of the substrate W from being damaged.
  • step T1 with the stone cleaning tool 144 or the brush cleaning tool 145 in contact with the holding surface 115a, the transfer holding unit 115 is reciprocated in the horizontal direction by the moving mechanism to clean the holding surface 115a. Then, as shown in FIG. 8, the height position of the holding surface 115a at the center positions B and C is set higher than the height position of the holding surface 115a at the center position A. If it does so, the pressure concerning the holding surface 115a can be made constant within a surface, and the said holding surface 115a can be wash
  • the elastic member 117 is provided on the outer peripheral portion of the conveyance holding portion 115, but the arrangement of the elastic member 117 is arbitrary.
  • the elastic member 117 may be provided at the center of the transport holding portion 115.
  • step S7 with the sponge cleaning tool 142 in contact with the non-processed surface Wn of the substrate W as shown in FIG.
  • the surface Wn may be cleaned.
  • FIG. 10 shows a state where the sponge cleaning tool 142 is in contact with the center of the substrate W.
  • the position of the center portion of the substrate W at this time is referred to as a center position A.
  • FIG. B and (c) show how the sponge cleaning tool 142 abuts on the outer periphery of the substrate W, respectively.
  • the position of the central portion of the substrate W at this time is referred to as center positions B and C.
  • the movement of the central part of the non-processed surface Wn of the substrate W is schematically shown together with its height position.
  • the pressure applied to the substrate W when the sponge cleaning tool 142 contacts the outer peripheral portion of the substrate W is the central portion of the substrate W. It becomes smaller than the pressure applied to. Therefore, as shown in FIG. 10, the height position of the non-processed surface Wn of the substrate W at the center position A is set higher than the height position of the non-processed surface Wn of the substrate W at the center positions B and C.
  • the pressure applied to the non-processed surface Wn of the substrate W when the sponge cleaning tool 142 contacts the outer peripheral portion of the substrate W can be increased.
  • the pressure applied to the non-processed surface Wn can be made constant within the surface, and damage to the substrate W due to pressure nonuniformity can be suppressed.
  • by increasing the pressure applied to the outer peripheral portion of the substrate W in this way it is possible to shorten the time required for cleaning as compared with the case where the height of the substrate W is not adjusted.
  • step T1 with the stone cleaning tool 144 or the brush cleaning tool 145 in contact with the holding surface 115a, the transfer holding unit 115 is reciprocated in the horizontal direction by the moving mechanism to clean the holding surface 115a. Then, as shown in FIG. 10, the height position of the holding surface 115a at the center position A is set higher than the height position of the holding surface 115a at the center positions B and C. If it does so, the pressure concerning the holding surface 115a can be made constant in a surface, and also cleaning time can also be shortened.
  • the protective tape is attached to the non-processed surface Wn of the substrate W in order to protect the device, but the protective material of the device is not limited to this.
  • a support substrate such as a support wafer or a glass substrate may be bonded to the non-processed surface Wn of the substrate W. Even in such a case, the present embodiment can be applied.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A substrate treatment system for processing a processed surface of a substrate, the substrate treatment system comprising: a holding step in which the processed surface is held by a conveying holding unit against the substrate, on which a non-processed surface is held by a processing holding unit; a subsequent liquid supply step in which a liquid is supplied from a liquid supply unit between the holding surface of the processing holding unit and the non-processed surface of the substrate; a subsequent raising step in which the substrate that is held by the conveying holding unit is raised by a movement mechanism to a height at which the liquid is not separated from the substrate; and a subsequent movement step in which the substrate held by the conveying unit is moved in a horizontal direction by the movement mechanism, in a state in which the liquid is contacting the substrate.

Description

基板処理システム及び基板処理方法Substrate processing system and substrate processing method
 (関連出願の相互参照)
 本願は、2018年5月11日に日本国に出願された特願2018-92361号に基づき、優先権を主張し、その内容をここに援用する。
(Cross-reference of related applications)
This application claims priority based on Japanese Patent Application No. 2018-92361 for which it applied to Japan on May 11, 2018, and uses the content here.
 本開示は、基板処理システム及び基板処理方法に関する。 The present disclosure relates to a substrate processing system and a substrate processing method.
 特許文献1は、研削後の脆性被加工物を搬送する搬送方法を開示している。搬送方法は、密着解放ステップと搬出ステップを備える。密着開放ステップでは、チャックテーブルの保持面から流体を噴出するとともに搬送手段に吸引保持された脆性被加工物を第1の速度で該チャックテーブルから離反させる。搬出ステップでは、密着解放ステップの実施に引き続いて、搬送手段を第1の速度より速い第2の速度でチャックテーブルから離反させて脆性被加工物をチャックテーブル上から搬出する。 Patent Document 1 discloses a conveying method for conveying a brittle workpiece after grinding. The conveying method includes an adhesion release step and an unloading step. In the close contact releasing step, fluid is ejected from the holding surface of the chuck table, and the brittle workpiece sucked and held by the conveying means is separated from the chuck table at a first speed. In the unloading step, following the execution of the close contact releasing step, the conveying means is separated from the chuck table at a second speed higher than the first speed, and the brittle workpiece is unloaded from the chuck table.
日本国特開2013-145776号公報Japanese Unexamined Patent Publication No. 2013-145776
 本開示にかかる技術は、基板の加工面を加工する基板処理システムにおいて、基板を適切に搬送する。 The technique according to the present disclosure appropriately transports a substrate in a substrate processing system that processes a processed surface of the substrate.
 本開示の一態様は、基板の加工面を加工する基板処理システムであって、前記基板の加工面を加工する際に、当該基板の加工面と反対側の非加工面を保持する加工用保持部と、前記加工用保持部の保持面に液を供給する液供給部と、前記基板を搬送する際に、当該基板の加工面を保持する搬送用保持部と、前記搬送用保持部を水平方向及び鉛直方向に移動させる移動機構と、前記加工用保持部、前記液供給部、前記搬送用保持部及び前記移動機構を制御する制御部と、を有し、前記制御部は、前記加工用保持部で非加工面が保持された前記基板に対し、前記搬送用保持部で加工面を保持する保持工程と、その後、前記液供給部から前記加工用保持部の保持面と前記基板の非加工面との間に液を供給する液供給工程と、その後、前記液が前記基板から離れない高さまで、前記移動機構によって前記搬送用保持部に保持された前記基板を上昇させる上昇工程と、その後、前記液が前記基板に接した状態で、前記移動機構によって前記搬送用保持部に保持された前記基板を水平方向に移動させる移動工程と、を実行させる。 One aspect of the present disclosure is a substrate processing system that processes a processed surface of a substrate, and holds the non-processed surface opposite to the processed surface of the substrate when the processed surface of the substrate is processed. A liquid supply unit that supplies a liquid to the holding surface of the processing holding unit, a transfer holding unit that holds the processed surface of the substrate when the substrate is transferred, and the transfer holding unit A moving mechanism that moves in a direction and a vertical direction, and a processing control unit that controls the processing holding unit, the liquid supply unit, the transport holding unit, and the moving mechanism. A holding step of holding the processed surface by the holding unit for conveyance with respect to the substrate on which the non-processed surface is held by the holding unit, and then the holding surface of the processing holding unit from the liquid supply unit A liquid supply step of supplying a liquid between the processing surface, and then the liquid is The ascending step of ascending the substrate held by the transfer holding unit by the moving mechanism to a height that does not separate from the plate, and then the transfer holding by the moving mechanism in a state where the liquid is in contact with the substrate. And a moving step of moving the substrate held by the part in the horizontal direction.
 本開示の一態様によれば、基板の加工面を加工する基板処理システムにおいて、基板を適切に搬送することができる。 According to one aspect of the present disclosure, a substrate can be appropriately transported in a substrate processing system that processes a processed surface of a substrate.
本実施形態にかかる基板処理システムの構成の概略を模式的に示す平面図である。It is a top view showing typically the outline of the composition of the substrate processing system concerning this embodiment. 加工用保持部の構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of the process holding part. 搬送用保持部の構成の概略を示す側面図である。It is a side view which shows the outline of a structure of the holding part for conveyance. 第2の洗浄ユニットの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of a 2nd washing | cleaning unit. 基板処理の主な工程を示すフローチャートである。It is a flowchart which shows the main processes of a board | substrate process. 搬送ユニットが受渡位置から基板を受け取る様子を示す説明図である。It is explanatory drawing which shows a mode that a conveyance unit receives a board | substrate from a delivery position. 第2の洗浄ユニットで基板の非加工面を洗浄する様子を示す説明図である。It is explanatory drawing which shows a mode that the non-processed surface of a board | substrate is wash | cleaned with a 2nd washing | cleaning unit. 他の実施形態において基板の高さを調整して当該基板の非加工面を洗浄する様子を示す説明図である。It is explanatory drawing which shows a mode that the height of a board | substrate is adjusted in other embodiment, and the non-processed surface of the said board | substrate is wash | cleaned. 他の実施形態において第2の洗浄ユニットで基板の非加工面を洗浄する様子を示す説明図である。It is explanatory drawing which shows a mode that the non-processed surface of a board | substrate is wash | cleaned by the 2nd washing | cleaning unit in other embodiment. 他の実施形態において基板の高さを調整して当該基板の非加工面を洗浄する様子を示す説明図である。It is explanatory drawing which shows a mode that the height of a board | substrate is adjusted in other embodiment, and the non-processed surface of the said board | substrate is wash | cleaned.
 半導体デバイスの製造工程においては、表面に複数の電子回路等のデバイスが形成された半導体基板(以下、基板という)に対し、当該基板の裏面を研削して、基板を薄化することが行われている。 In the manufacturing process of a semiconductor device, a back surface of the substrate is ground to a semiconductor substrate (hereinafter referred to as a substrate) on which a plurality of devices such as electronic circuits are formed on the surface, thereby thinning the substrate. ing.
 上述した特許文献1では、研削後の脆性被加工物(基板)の搬送方法を開示している。具体的には、先ず、チャックテーブルに保持された脆性被加工物の第1面を研削砥石で研削して脆性被加工物を所定の厚みへと薄化する。ここで、薄化した脆性被加工物は脆いため、チャックテーブルからの搬出時に破損するおそれがある。そこで、特許文献1に開示の方法では、上述した密着解放ステップと搬出ステップを行っている。すなわち、チャックテーブルの保持面から流体、純水とエアの混合流体を噴出するとともに、2段階の速度で脆性被加工物をチャックテーブルから離反させている。これにより、搬出時の脆性被加工物の損傷を抑制することを図っている。 Patent Document 1 described above discloses a method for conveying a brittle workpiece (substrate) after grinding. Specifically, first, the first surface of the brittle workpiece held on the chuck table is ground with a grinding wheel to thin the brittle workpiece to a predetermined thickness. Here, since the thin brittle workpiece is brittle, it may be damaged when it is unloaded from the chuck table. Therefore, in the method disclosed in Patent Document 1, the contact release step and the carry-out step described above are performed. That is, a fluid, a mixed fluid of pure water and air is ejected from the holding surface of the chuck table, and the brittle workpiece is separated from the chuck table at a two-stage speed. Thereby, it is aimed to suppress damage to the brittle workpiece during unloading.
 しかしながら、特許文献1に開示された方法では、チャックテーブルの保持面に純水とエアの混合流体を供給するため、チャックテーブルと脆性被加工物の間に純水の膜が形成される。そうすると、この水膜と脆性被加工物との界面に張力が作用するため、チャックテーブルからの搬出時、依然として脆性被加工物が損傷を被るおそれがある。また、脆性被加工物が搬送手段から剥がれるおそれもある。 However, in the method disclosed in Patent Document 1, since a mixed fluid of pure water and air is supplied to the holding surface of the chuck table, a pure water film is formed between the chuck table and the brittle workpiece. Then, since tension acts on the interface between the water film and the brittle workpiece, the brittle workpiece may still be damaged when it is unloaded from the chuck table. In addition, the brittle workpiece may be peeled off from the conveying means.
 そこで、本開示にかかる技術は、基板が損傷を被るのを抑制して適切に搬送する。以下、本実施形態にかかる基板処理システム及び基板処理方法について、図面を参照しながら説明する。なお、本明細書および図面において、実質的に同一の機能構成を有する要素においては、同一の符号を付することにより重複説明を省略する。 Therefore, the technology according to the present disclosure suppresses the substrate from being damaged and appropriately conveys the substrate. Hereinafter, a substrate processing system and a substrate processing method according to the present embodiment will be described with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.
 先ず、本実施形態にかかる基板処理システムの構成について説明する。図1は、基板処理システム1の構成の概略を模式的に示す平面図である。 First, the configuration of the substrate processing system according to the present embodiment will be described. FIG. 1 is a plan view schematically showing the outline of the configuration of the substrate processing system 1.
 本実施形態の基板処理システム1では、基板Wを薄化する。基板Wは、例えばシリコンウェハや化合物半導体ウェハなどの半導体ウェハである。基板Wの表面(以下、非加工面Wnという)にはデバイス(図示せず)が形成されており、さらに当該表面にはデバイスを保護するための保護材、例えば保護テープ(図示せず)が貼り付けられている。そして、基板Wの裏面(以下、加工面Wgという)に対して研削などの所定の加工処理が行われ、当該基板が薄化される。 In the substrate processing system 1 of the present embodiment, the substrate W is thinned. The substrate W is a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer. A device (not shown) is formed on the surface of the substrate W (hereinafter referred to as a non-processed surface Wn), and a protective material for protecting the device, for example, a protective tape (not shown) is further provided on the surface. It is pasted. Then, a predetermined processing such as grinding is performed on the back surface of the substrate W (hereinafter referred to as a processing surface Wg), and the substrate is thinned.
 基板処理システム1は、搬入ステーション2、搬出ステーション3、加工装置4、後処理装置5、及び搬送ステーション6を接続した構成を有している。搬入ステーション2は、処理前の基板WをカセットC内に収納し、複数の基板Wをカセット単位で外部から基板処理システム1に搬入する。搬出ステーション3は、処理後の基板WをカセットC内に収納し、複数の基板Wをカセット単位で基板処理システム1から外部に搬出する。加工装置4は、基板Wに加工処理を行って薄化する。後処理装置5は、加工処理後の基板Wの後処理を行う。搬送ステーション6は、搬入ステーション2、加工装置4及び後処理装置5の間で基板Wを搬送する。搬入ステーション2、搬送ステーション6、及び加工装置4は、X軸負方向側においてY軸方向にこの順で並べて配置されている。搬出ステーション3と後処理装置5は、X軸正方向側においてY軸方向にこの順で並べて配置されている。 The substrate processing system 1 has a configuration in which a carry-in station 2, a carry-out station 3, a processing apparatus 4, a post-processing apparatus 5, and a transfer station 6 are connected. The carry-in station 2 stores the substrate W before processing in the cassette C, and carries a plurality of substrates W into the substrate processing system 1 from the outside in units of cassettes. The unloading station 3 stores the processed substrates W in the cassette C, and unloads a plurality of substrates W from the substrate processing system 1 to the outside in units of cassettes. The processing apparatus 4 thins the substrate W by processing it. The post-processing apparatus 5 performs post-processing of the substrate W after processing. The transfer station 6 transfers the substrate W among the carry-in station 2, the processing apparatus 4 and the post-processing apparatus 5. The carry-in station 2, the transfer station 6, and the processing device 4 are arranged in this order in the Y-axis direction on the X-axis negative direction side. The carry-out station 3 and the post-processing device 5 are arranged in this order in the Y-axis direction on the X-axis positive direction side.
 搬入ステーション2には、カセット載置台10が設けられている。図示の例では、カセット載置台10には、複数、例えば2つのカセットCをX軸方向に一列に載置自在になっている。 The loading station 2 is provided with a cassette mounting table 10. In the illustrated example, a plurality of, for example, two cassettes C can be placed on the cassette mounting table 10 in a line in the X-axis direction.
 搬出ステーション3も、搬入ステーション2と同様の構成を有している。搬出ステーション3にはカセット載置台20が設けられ、カセット載置台20には、例えば2つのカセットCをX軸方向に一列に載置自在になっている。なお、搬入ステーション2と搬出ステーション3は1つの搬入出ステーションに統合されてもよく、かかる場合、搬入出ステーションには共通のカセット載置台が設けられる。 The carry-out station 3 has the same configuration as the carry-in station 2. The unloading station 3 is provided with a cassette mounting table 20. For example, two cassettes C can be mounted in a row in the X-axis direction on the cassette mounting table 20. The carry-in station 2 and the carry-out station 3 may be integrated into one carry-in / out station. In such a case, a common cassette mounting table is provided in the carry-in / out station.
 加工装置4では、基板Wに対して研削や洗浄などの加工処理が行われる。この加工装置4の構成は後述する。 In the processing apparatus 4, processing such as grinding or cleaning is performed on the substrate W. The configuration of the processing device 4 will be described later.
 後処理装置5では、加工装置4で加工処理された基板Wに対して後処理が行われる。後処理としては、例えば基板Wをダイシングテープを介してダイシングフレームに保持するマウント処理、基板Wに貼り付けられた保護テープを剥離する剥離処理などが行われる。そして、後処理装置5は、後処理が行われダイシングフレームに保持された基板Wを搬出ステーション3のカセットCに搬送する。後処理装置5で行われるマウント処理や剥離処理はそれぞれ、公知の装置が用いられる。 In the post-processing apparatus 5, post-processing is performed on the substrate W processed by the processing apparatus 4. As the post-processing, for example, a mounting process for holding the substrate W on the dicing frame via a dicing tape, a peeling process for peeling the protective tape attached to the substrate W, and the like are performed. Then, the post-processing apparatus 5 transports the substrate W that has been post-processed and held on the dicing frame to the cassette C of the unloading station 3. A known apparatus is used for each of the mounting process and the peeling process performed by the post-processing apparatus 5.
 搬送ステーション6には、基板搬送領域30が設けられている。基板搬送領域30には、X軸方向に延伸する搬送路31上を移動自在な基板搬送装置32が設けられている。基板搬送装置32は、基板Wを保持する基板保持部として、搬送フォーク33と搬送パッド34を有している。搬送フォーク33は、その先端が2本に分岐し、基板Wを吸着保持する。搬送フォーク33は、研削処理前の基板Wを搬送する。搬送パッド34は、平面視において基板Wの径より長い径を備えた円形状を有し、基板Wを吸着保持する。搬送パッド34は、研削処理後の基板Wを搬送する。そして、これら搬送フォーク33と搬送パッド34はそれぞれ、水平方向、鉛直方向、水平軸回り及び鉛直軸周りに移動自在に構成されている。 The transfer station 6 is provided with a substrate transfer area 30. A substrate transfer device 32 is provided in the substrate transfer region 30 and is movable on a transfer path 31 extending in the X-axis direction. The substrate transfer device 32 includes a transfer fork 33 and a transfer pad 34 as a substrate holding unit that holds the substrate W. The transport fork 33 has its tip branched into two to hold the substrate W by suction. The transport fork 33 transports the substrate W before the grinding process. The transport pad 34 has a circular shape with a diameter longer than the diameter of the substrate W in plan view, and holds the substrate W by suction. The transport pad 34 transports the substrate W after the grinding process. The transport fork 33 and the transport pad 34 are configured to be movable in the horizontal direction, the vertical direction, the horizontal axis, and the vertical axis, respectively.
 基板処理システム1には、制御部40が設けられている。制御部40は、例えばコンピュータであり、プログラム格納部(図示せず)を有している。プログラム格納部には、基板処理システム1における基板Wの処理を制御するプログラムが格納されている。また、プログラム格納部には、上述の各種処理装置や搬送装置などの駆動系の動作を制御して、基板処理システム1における後述の基板処理を実現させるためのプログラムも格納されている。なお、上記プログラムは、コンピュータに読み取り可能な記憶媒体Hに記録されていたものであって、当該記憶媒体Hから制御部40にインストールされたものであってもよい。 The substrate processing system 1 is provided with a control unit 40. The control unit 40 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the substrate W in the substrate processing system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize substrate processing described later in the substrate processing system 1. The program may be recorded on a computer-readable storage medium H and may be installed in the control unit 40 from the storage medium H.
 次に、上述した加工装置4の構成について説明する。加工装置4は、回転テーブル100、搬送ユニット110、アライメントユニット120、第1の洗浄ユニット130、第2の洗浄ユニット140、粗研削ユニット150、中研削ユニット160、及び仕上研削ユニット170を有している。 Next, the configuration of the processing apparatus 4 described above will be described. The processing apparatus 4 includes a rotary table 100, a transport unit 110, an alignment unit 120, a first cleaning unit 130, a second cleaning unit 140, a rough grinding unit 150, a middle grinding unit 160, and a finish grinding unit 170. Yes.
 回転テーブル100は、回転機構(図示せず)によって回転自在に構成されている。回転テーブル100上には、基板Wの非加工面Wnを吸着保持する加工用保持部101が4つ設けられている。加工用保持部101は、回転テーブル100と同一円周上に均等、すなわち90度毎に配置されている。4つの加工用保持部101は、回転テーブル100が回転することにより、受渡位置A0及び加工位置A1~A3に移動可能になっている。 The rotary table 100 is configured to be rotatable by a rotation mechanism (not shown). On the turntable 100, four processing holding portions 101 that hold the non-processed surface Wn of the substrate W by suction are provided. The processing holding portions 101 are arranged on the same circumference as the rotary table 100, that is, every 90 degrees. The four processing holders 101 are movable to the delivery position A0 and the processing positions A1 to A3 as the turntable 100 rotates.
 本実施形態では、受渡位置A0は回転テーブル100のX軸正方向側且つY軸負方向側の位置であり、当該受渡位置A0のY軸負方向側には、第2の洗浄ユニット140、アライメントユニット120及び第1の洗浄ユニット130が並べて配置される。アライメントユニット120と第1の洗浄ユニット130は上方からこの順で積層されて配置される。第1の加工位置A1は回転テーブル100のX軸正方向側且つY軸正方向側の位置であり、粗研削ユニット150が配置される。第2の加工位置A2は回転テーブル100のX軸負方向側且つY軸正方向側の位置であり、中研削ユニット160が配置される。第3の加工位置A3は回転テーブル100のX軸負方向側且つY軸負方向側の位置であり、仕上研削ユニット170が配置される。 In this embodiment, the delivery position A0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the turntable 100, and the second cleaning unit 140, alignment is on the Y-axis negative direction side of the delivery position A0. The unit 120 and the first cleaning unit 130 are arranged side by side. The alignment unit 120 and the first cleaning unit 130 are stacked in this order from above. The first machining position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the turntable 100, and the rough grinding unit 150 is disposed. The second machining position A2 is a position on the X-axis negative direction side and the Y-axis positive direction side of the turntable 100, and the intermediate grinding unit 160 is disposed. The third machining position A3 is a position on the X-axis negative direction side and the Y-axis negative direction side of the turntable 100, and the finish grinding unit 170 is disposed.
 図2に示すように加工用保持部101は保持部基台102に保持されている。加工用保持部101及び保持部基台102は、回転機構103によって回転可能に構成されている。回転機構103は、例えば回転テーブル100に形成された貫通孔100aを挿通して設けられる。 As shown in FIG. 2, the processing holding portion 101 is held on a holding portion base 102. The processing holder 101 and the holder base 102 are configured to be rotatable by a rotation mechanism 103. The rotation mechanism 103 is provided, for example, through a through hole 100a formed in the turntable 100.
 加工用保持部101には、当該加工用保持部101の基板Wの保持面101aに、少なくとも液又はガスを供給する供給管104が接続されている。供給管104は、回転機構103の内部を通って加工用保持部101に接続される。また、供給管104は、4つの加工用保持部101のそれぞれに接続されている。各供給管104には、各加工用保持部101への液又はガスの供給を制御するバルブ104aが設けられている。また、供給管104は、下流側において液供給管104bとガス供給管104cに分岐している。液供給管104bには、液供給部105が接続されている。液供給部105は、液、例えば純水を貯留し、当該液を保持面101aに供給する。ガス供給管104cには、ガス供給部106が接続されている。ガス供給部106は、ガス、例えばエアや不活性ガスを貯留し、当該ガスを保持面101aに供給する。 The processing holding unit 101 is connected to a supply pipe 104 that supplies at least a liquid or a gas to the holding surface 101 a of the substrate W of the processing holding unit 101. The supply pipe 104 is connected to the processing holding unit 101 through the inside of the rotation mechanism 103. The supply pipe 104 is connected to each of the four processing holding portions 101. Each supply pipe 104 is provided with a valve 104 a that controls supply of liquid or gas to each processing holding unit 101. Further, the supply pipe 104 is branched into a liquid supply pipe 104b and a gas supply pipe 104c on the downstream side. A liquid supply unit 105 is connected to the liquid supply pipe 104b. The liquid supply unit 105 stores a liquid, for example, pure water, and supplies the liquid to the holding surface 101a. A gas supply unit 106 is connected to the gas supply pipe 104c. The gas supply unit 106 stores a gas, for example, air or an inert gas, and supplies the gas to the holding surface 101a.
 加工用保持部101には例えばポーラスチャックが用いられる。加工用保持部101には、保持面101aにて基板Wを吸着保持するため、当該基板Wを吸引する吸引管107が接続されている。吸引管107は、回転機構103の内部を通って加工用保持部101に接続される。また、吸引管107は、4つの加工用保持部101のそれぞれに接続されている。各吸引管107には、各加工用保持部101における吸引を制御するバルブ107aが設けられている。また、吸引管107には、基板Wを吸引する吸引装置108が接続されている。なお、このポーラスチャックを詰まらせないようにするため、加工用保持部101で基板Wを保持していない状態では、液供給部105から液が供給される。 For example, a porous chuck is used for the processing holding portion 101. A suction tube 107 for sucking the substrate W is connected to the processing holding unit 101 in order to suck and hold the substrate W by the holding surface 101a. The suction tube 107 is connected to the processing holding portion 101 through the inside of the rotation mechanism 103. Further, the suction tube 107 is connected to each of the four processing holding portions 101. Each suction tube 107 is provided with a valve 107 a that controls suction in each processing holding portion 101. A suction device 108 for sucking the substrate W is connected to the suction tube 107. In order to prevent the porous chuck from being clogged, the liquid is supplied from the liquid supply unit 105 when the substrate W is not held by the processing holding unit 101.
 なお、本実施形態では、液供給部105とガス供給部106に共通した供給管104を用いたが、液供給管104bとガス供給管104cをそれぞれ直接、加工用保持部101に接続してもよい。かかる場合、液供給管104bとガス供給管104cのそれぞれに、バルブ(図示せず)が設けられる。また、本実施形態では、4つの加工用保持部101に共通の液供給部105とガス供給部106を設けたが、加工用保持部101毎に個別に液供給部105とガス供給部106をそれぞれ設けてもよい。 In this embodiment, the supply pipe 104 common to the liquid supply unit 105 and the gas supply unit 106 is used. However, the liquid supply pipe 104b and the gas supply pipe 104c may be directly connected to the processing holding unit 101, respectively. Good. In such a case, a valve (not shown) is provided in each of the liquid supply pipe 104b and the gas supply pipe 104c. Further, in this embodiment, the common liquid supply unit 105 and the gas supply unit 106 are provided in the four processing holding units 101, but the liquid supply unit 105 and the gas supply unit 106 are individually provided for each processing holding unit 101. Each may be provided.
 図1に示すように搬送ユニット110は、複数、例えば3つのアーム111~113を備えた多関節型のロボットである。3つのアーム111~113は関節部(図示せず)によって接続されている。これら関節部によって、3つのアーム111~113のうち、先端の第1のアーム111と中間の第2のアーム112は、それぞれ基端部を中心に旋回自在に構成されている。また、基端の第3のアーム113は、アーム111~113を鉛直方向に移動させる移動機構114に取り付けられている。かかる構成により、後述の基板Wを吸着保持する搬送用保持部115は、水平方向及び鉛直方向に移動自在になっている。 As shown in FIG. 1, the transport unit 110 is an articulated robot including a plurality of, for example, three arms 111-113. The three arms 111 to 113 are connected by joint portions (not shown). With these joint portions, of the three arms 111 to 113, the first arm 111 at the distal end and the second arm 112 in the middle are each configured to be pivotable about the proximal end portion. The third arm 113 at the base end is attached to a moving mechanism 114 that moves the arms 111 to 113 in the vertical direction. With this configuration, a transfer holding unit 115 that holds and holds a substrate W described later is movable in the horizontal direction and the vertical direction.
 第1のアーム111には、基板Wを吸着保持する搬送用保持部115が取り付けられている。搬送用保持部115には、例えばポーラスチャックが用いられる。図3に示すように搬送用保持部115は、平面視において基板Wの径より長い径を備えた円形状を有している。そして搬送用保持部115は、その保持面115aにおいて、基板Wの加工面Wg全面を吸着保持する。また、搬送用保持部115は、第1のアーム111に設けられた回転機構111aによって、回転自在に構成されている。 The first arm 111 is provided with a transport holding unit 115 that holds the substrate W by suction. For example, a porous chuck is used for the conveyance holding unit 115. As shown in FIG. 3, the transfer holder 115 has a circular shape having a diameter longer than the diameter of the substrate W in plan view. The transport holding unit 115 sucks and holds the entire processing surface Wg of the substrate W on the holding surface 115a. Further, the transport holding unit 115 is configured to be rotatable by a rotation mechanism 111 a provided on the first arm 111.
 第1のアーム111と搬送用保持部115の間には、傾動機構116と弾性部材117が支持板118を介して設けられている。傾動機構116は、第1のアーム111と支持板118の間に設けられている。弾性部材117は、搬送用保持部115と支持板118の間に設けられている。 Between the first arm 111 and the conveyance holder 115, a tilting mechanism 116 and an elastic member 117 are provided via a support plate 118. The tilt mechanism 116 is provided between the first arm 111 and the support plate 118. The elastic member 117 is provided between the conveyance holding portion 115 and the support plate 118.
 傾動機構116は、搬送用保持部115を側面視において傾動自在にする。傾動機構116の構成は任意であるが、例えば第1のアーム111に対して支持板118(搬送用保持部115)を離間方向に付勢する付勢部材(図示せず)を有する。かかる傾動機構116により、例えば搬送用保持部115が基板Wを受け取る際に、当該基板Wが平坦(水平)でなくても、その傾きにそって搬送用保持部115を傾動させることができる。また、例えば搬送用保持部115が基板Wを受け渡す際に、受け渡し先が平坦(水平)でなくても、その傾きにそって搬送用保持部115を傾動させることができる。このように搬送用保持部115を傾動させることで、基板Wを適切に受け取る(受け渡す)ことができる。なお、傾動機構116は、搬送用保持部115を固定する機構をさらに有していてもよい。かかる場合、基板Wの搬送中には、搬送用保持部115を固定することができる。その結果、基板Wの受け取り(受け渡し)と搬送を適切に行うことができる。 The tilt mechanism 116 makes the transport holding portion 115 tiltable in a side view. Although the configuration of the tilt mechanism 116 is arbitrary, for example, the tilt mechanism 116 includes a biasing member (not shown) that biases the support plate 118 (the transport holding portion 115) in the separation direction with respect to the first arm 111. With this tilting mechanism 116, for example, when the transport holding unit 115 receives the substrate W, the transport holding unit 115 can be tilted along the tilt even if the substrate W is not flat (horizontal). Further, for example, when the transport holding unit 115 delivers the substrate W, the transport holding unit 115 can be tilted along the tilt even if the delivery destination is not flat (horizontal). Thus, the substrate W can be appropriately received (delivered) by tilting the transport holding portion 115. Note that the tilting mechanism 116 may further include a mechanism for fixing the conveyance holding portion 115. In such a case, the transfer holding unit 115 can be fixed during transfer of the substrate W. As a result, the substrate W can be received (delivered) and transported appropriately.
 弾性部材117は、例えば搬送用保持部115の外周部において、当該搬送用保持部115の同心円上に複数設けられている。弾性部材117は弾性を有するものであれば特に限定されるものではないが、例えばばねが用いられる。そして、かかる弾性部材117によって、例えば搬送用保持部115が基板Wを受け取る又は受け渡す際に、その衝撃を吸収することができる。その結果、搬送用保持部115に保持された基板Wに強い押圧力が作用するのを回避することができる。 A plurality of elastic members 117 are provided, for example, on the outer circumference of the conveyance holder 115 and on the concentric circles of the conveyance holder 115. The elastic member 117 is not particularly limited as long as it has elasticity. For example, a spring is used. The elastic member 117 can absorb the impact when the holding unit 115 for transport receives or transfers the substrate W, for example. As a result, it is possible to avoid a strong pressing force acting on the substrate W held by the transfer holding unit 115.
 以上の構成を備えた搬送ユニット110は、受渡位置A0、アライメントユニット120、第1の洗浄ユニット130、及び第2の洗浄ユニット140に対して、基板Wを搬送することができる。 The transport unit 110 having the above configuration can transport the substrate W to the delivery position A0, the alignment unit 120, the first cleaning unit 130, and the second cleaning unit 140.
 図1に示すようにアライメントユニット120では、研削処理前の基板Wの水平方向の向きを調節する。例えばスピンチャック(図示せず)に保持された基板Wを回転させながら、検出部(図示せず)で基板Wのノッチ部の位置を検出することで、当該ノッチ部の位置を調節して基板Wの水平方向の向きを調節する。 As shown in FIG. 1, the alignment unit 120 adjusts the horizontal direction of the substrate W before the grinding process. For example, the position of the notch portion of the substrate W is detected by a detection unit (not shown) while rotating the substrate W held by a spin chuck (not shown), thereby adjusting the position of the notch portion and the substrate. Adjust the horizontal direction of W.
 第1の洗浄ユニット130では、研削処理後の基板Wの加工面Wgを洗浄し、より具体的にはスピン洗浄する。例えばスピンチャック(図示せず)に保持された基板Wを回転させながら、洗浄液ノズル(図示せず)から基板Wの加工面Wgに洗浄液を供給する。そうすると、供給された洗浄液は加工面Wg上を拡散し、当該加工面Wgが洗浄される。 In the first cleaning unit 130, the processed surface Wg of the substrate W after the grinding process is cleaned, more specifically, spin cleaning. For example, the cleaning liquid is supplied from the cleaning liquid nozzle (not shown) to the processing surface Wg of the substrate W while rotating the substrate W held on the spin chuck (not shown). Then, the supplied cleaning liquid diffuses on the processing surface Wg, and the processing surface Wg is cleaned.
 第2の洗浄ユニット140では、研削処理後の基板Wであって搬送ユニット110の搬送用保持部115に保持された基板Wの非加工面Wnを洗浄すると共に、搬送用保持部115の保持面115aを洗浄する。これら非加工面Wnと保持面115aが、第2の洗浄ユニット140で洗浄される洗浄面である。図4に示すように第2の洗浄ユニット140は、処理容器141を有している。処理容器141の内部には、洗浄液ノズルを有するスポンジ洗浄具142、エアノズル143、ストーン洗浄具144(砥石)、及びブラシ洗浄具145が設けられている。スポンジ洗浄具142、エアノズル143、ストーン洗浄具144、及びブラシ洗浄具145はそれぞれ、昇降機構(図示せず)によって鉛直方向に移動自在に構成されている。 The second cleaning unit 140 cleans the non-processed surface Wn of the substrate W that has been ground and is held by the transfer holding unit 115 of the transfer unit 110 and holds the holding surface of the transfer holding unit 115. 115a is washed. The non-processed surface Wn and the holding surface 115a are cleaning surfaces cleaned by the second cleaning unit 140. As shown in FIG. 4, the second cleaning unit 140 has a processing container 141. Inside the processing container 141, a sponge cleaning tool 142 having a cleaning liquid nozzle, an air nozzle 143, a stone cleaning tool 144 (grinding stone), and a brush cleaning tool 145 are provided. Each of the sponge cleaning tool 142, the air nozzle 143, the stone cleaning tool 144, and the brush cleaning tool 145 is configured to be movable in the vertical direction by an elevating mechanism (not shown).
 スポンジ洗浄具142は、例えば基板Wの径より長く延伸するスポンジを有し、スポンジには洗浄液、例えば純水を供給可能であり、当該非加工面Wnを洗浄する。エアノズル143は、基板Wの非加工面Wnにエアを噴射して、当該非加工面Wnを乾燥させる。これらスポンジ及び洗浄液による非加工面Wnの洗浄と、エアによる非加工面Wnの乾燥はそれぞれ、搬送用保持部115で基板Wを保持した状態、且つ回転機構111aによって搬送用保持部115(基板W)を回転させながら行われる。これにより、基板Wの非加工面Wn全面が洗浄される。 The sponge cleaning tool 142 has, for example, a sponge extending longer than the diameter of the substrate W, and a cleaning liquid such as pure water can be supplied to the sponge to clean the non-processed surface Wn. The air nozzle 143 sprays air onto the non-processed surface Wn of the substrate W to dry the non-processed surface Wn. The cleaning of the non-processed surface Wn with the sponge and the cleaning liquid and the drying of the non-processed surface Wn with air are performed in a state where the substrate W is held by the transfer holding unit 115 and the transfer holding unit 115 (substrate W ) While rotating. Thereby, the entire non-processed surface Wn of the substrate W is cleaned.
 ストーン洗浄具144とブラシ洗浄具145はそれぞれ、例えば搬送ユニット110の搬送用保持部115の保持面115aの径より長く延伸し、当該保持面115aに当接して洗浄する。そして、ストーン洗浄具144とブラシ洗浄具145による搬送用保持部115の洗浄は、回転機構111aによって搬送用保持部115を回転させながら行われる。これにより搬送用保持部115の保持面115a全面が洗浄される。 Each of the stone cleaning tool 144 and the brush cleaning tool 145 extends, for example, longer than the diameter of the holding surface 115a of the transfer holding unit 115 of the transfer unit 110, and abuts on the holding surface 115a for cleaning. The cleaning of the transport holding unit 115 by the stone cleaning tool 144 and the brush cleaning tool 145 is performed while rotating the transport holding unit 115 by the rotation mechanism 111a. As a result, the entire holding surface 115a of the transfer holding unit 115 is cleaned.
 図1に示すように粗研削ユニット150では、基板Wの加工面Wgを粗研削する。粗研削ユニット150は、環状形状で回転自在な粗研削砥石(図示せず)を備えた粗研削部151を有している。また、粗研削部151は、支柱152に沿って鉛直方向及び水平方向に移動可能に構成されている。そして、加工用保持部101に保持された基板Wの加工面Wgを粗研削砥石に当接させた状態で、加工用保持部101と粗研削砥石をそれぞれ回転させることによって、基板Wの加工面Wgを粗研削する。 As shown in FIG. 1, in the rough grinding unit 150, the processed surface Wg of the substrate W is roughly ground. The rough grinding unit 150 includes a rough grinding portion 151 having a circular grinding wheel (not shown) that is rotatable in an annular shape. The rough grinding portion 151 is configured to be movable in the vertical direction and the horizontal direction along the support column 152. Then, the processing surface of the substrate W is rotated by rotating the processing holding portion 101 and the rough grinding wheel while the processing surface Wg of the substrate W held by the processing holding portion 101 is in contact with the rough grinding wheel. Roughly grind Wg.
 中研削ユニット160では、基板Wの加工面Wgを中研削する。中研削ユニット160は、環状形状で回転自在な中研削砥石(図示せず)を備えた中研削部161を有している。また、中研削部161は、支柱162に沿って鉛直方向及び水平方向に移動可能に構成されている。なお、中研削砥石の砥粒の粒度は、粗研削砥石の砥粒の粒度より小さい。そして、加工用保持部101に保持された基板Wの加工面Wgを中研削砥石に当接させた状態で、加工用保持部101と中研削砥石をそれぞれ回転させることによって、加工面Wgを中研削する。 In the middle grinding unit 160, the processing surface Wg of the substrate W is ground. The intermediate grinding unit 160 has an intermediate grinding part 161 provided with an annular grinding wheel (not shown) that is rotatable. Further, the intermediate grinding portion 161 is configured to be movable in the vertical direction and the horizontal direction along the support column 162. The grain size of the medium grinding wheel is smaller than the grain size of the coarse grinding wheel. Then, while the processing surface Wg of the substrate W held by the processing holding unit 101 is in contact with the intermediate grinding wheel, the processing holding unit 101 and the intermediate grinding wheel are rotated, so that the processing surface Wg is set to the middle. Grind.
 仕上研削ユニット170では、基板Wの加工面Wgを仕上研削する。仕上研削ユニット170は、環状形状で回転自在な仕上研削砥石(図示せず)を備えた仕上研削部171を有している。また、仕上研削部171は、支柱172に沿って鉛直方向及び水平方向に移動可能に構成されている。なお、仕上研削砥石の砥粒の粒度は、中研削砥石の砥粒の粒度より小さい。そして、加工用保持部101に保持された基板Wの加工面Wgを仕上研削砥石に当接させた状態で、加工用保持部101と仕上研削砥石をそれぞれ回転させることによって、加工面Wgを仕上研削する。 The finish grinding unit 170 finish-grinds the processed surface Wg of the substrate W. The finish grinding unit 170 has a finish grinding portion 171 provided with a finish grinding wheel (not shown) that is annular and rotatable. Further, the finish grinding part 171 is configured to be movable in the vertical direction and the horizontal direction along the support column 172. The grain size of the finish grinding wheel is smaller than the grain size of the medium grinding wheel. Then, the processing surface Wg is finished by rotating the processing holding portion 101 and the finishing grinding wheel while the processing surface Wg of the substrate W held by the processing holding portion 101 is in contact with the finishing grinding wheel. Grind.
 次に、以上のように構成された基板処理システム1を用いて行われる基板処理について説明する。 Next, substrate processing performed using the substrate processing system 1 configured as described above will be described.
 先ず、複数の基板Wを収納したカセットCが、搬入ステーション2のカセット載置台10に載置される。カセットC内には、保護テープが変形するのを抑制するため、当該保護テープが貼り付けられた基板Wの非加工面Wnが上側を向くように基板Wが収納されている。 First, a cassette C storing a plurality of substrates W is placed on the cassette placement table 10 of the carry-in station 2. In the cassette C, in order to suppress the deformation of the protective tape, the substrate W is stored so that the non-processed surface Wn of the substrate W to which the protective tape is attached faces upward.
 次に、基板搬送装置32の搬送フォーク33によりカセットC内の基板Wが取り出され、加工装置4に搬送される。この際、搬送フォーク33により基板Wの加工面Wgが上側に向くように、表裏面が反転される。 Next, the substrate W in the cassette C is taken out by the transfer fork 33 of the substrate transfer device 32 and transferred to the processing device 4. At this time, the front and back surfaces are reversed so that the processing surface Wg of the substrate W faces upward by the transport fork 33.
 加工装置4に搬送された基板Wは、アライメントユニット120に受け渡される。そして、アライメントユニット120において、基板Wの水平方向の向きが調節される(図5のステップS1)。 The substrate W transferred to the processing apparatus 4 is transferred to the alignment unit 120. In the alignment unit 120, the horizontal direction of the substrate W is adjusted (step S1 in FIG. 5).
 次に、基板Wは搬送ユニット110により、アライメントユニット120から受渡位置A0に搬送され、当該受渡位置A0の加工用保持部101に受け渡される。加工用保持部101では、基板Wの非加工面Wnが保持される。また搬送用保持部115がアライメントユニット120から基板Wを受け取る際と、加工用保持部101に基板Wを受け渡す際には、傾動機構116によって搬送用保持部115を傾動自在にさせる。また、基板Wの受け取り及び受け渡し時には、弾性部材117によって衝撃が吸収される。これにより、基板Wの受け取り及び受け渡しを適切に行うことができる。 Next, the substrate W is transported from the alignment unit 120 to the delivery position A0 by the transport unit 110, and is delivered to the processing holding unit 101 at the delivery position A0. In the processing holder 101, the non-processed surface Wn of the substrate W is held. Further, when the transport holder 115 receives the substrate W from the alignment unit 120 and when the substrate W is transferred to the processing holder 101, the tilt mechanism 116 makes the transport holder 115 tiltable. Further, when the substrate W is received and delivered, the elastic member 117 absorbs the impact. Thereby, the reception and delivery of the substrate W can be performed appropriately.
 次に、加工用保持部101を第1の加工位置A1に移動させる。そして、粗研削ユニット150によって、基板Wの加工面Wgが粗研削される(図5のステップS2)。 Next, the processing holder 101 is moved to the first processing position A1. Then, the processed surface Wg of the substrate W is roughly ground by the rough grinding unit 150 (step S2 in FIG. 5).
 次に、加工用保持部101を第2の加工位置A2に移動させる。そして、中研削ユニット160によって、基板Wの加工面Wgが中研削される(図5のステップS3)。 Next, the processing holding portion 101 is moved to the second processing position A2. Then, the processing surface Wg of the substrate W is subjected to intermediate grinding by the intermediate grinding unit 160 (step S3 in FIG. 5).
 次に、加工用保持部101を第3の加工位置A3に移動させる。そして、仕上研削ユニット170によって、基板Wの加工面Wgが仕上研削される(図5のステップS4)。 Next, the processing holding portion 101 is moved to the third processing position A3. Then, the processed surface Wg of the substrate W is finish-ground by the finish grinding unit 170 (step S4 in FIG. 5).
 次に、加工用保持部101を受渡位置A0に移動させる。ここでは、洗浄液ノズル(図示せず)を用いて、基板Wの加工面Wgが洗浄液によって粗洗浄される(図5のステップS5)。このステップS5では、加工面Wgの汚れをある程度まで落とす洗浄が行われる。 Next, the processing holder 101 is moved to the delivery position A0. Here, the processing surface Wg of the substrate W is roughly cleaned with the cleaning liquid using a cleaning liquid nozzle (not shown) (step S5 in FIG. 5). In step S5, cleaning is performed to remove dirt on the processed surface Wg to some extent.
 次に、基板Wは搬送ユニット110により、受渡位置A0から第2の洗浄ユニット140に搬送される(図5のステップS6)。ここで、ステップS6において、搬送ユニット110が受渡位置A0から基板Wを受け取る方法について説明する。 Next, the substrate W is transported from the delivery position A0 to the second cleaning unit 140 by the transport unit 110 (step S6 in FIG. 5). Here, a method in which the transport unit 110 receives the substrate W from the delivery position A0 in step S6 will be described.
 先ず、図6(a)に示すように加工用保持部101に吸着保持された基板Wの上方に、搬送ユニット110の搬送用保持部115を移動させ、当該基板Wに対向して配置する。 First, as shown in FIG. 6A, the transfer holding unit 115 of the transfer unit 110 is moved above the substrate W sucked and held by the processing holding unit 101 and arranged to face the substrate W.
 その後、図6(b)に示すように搬送用保持部115を下降させ、当該搬送用保持部115で基板Wの加工面Wgを全面で吸着保持する。この際、傾動機構116によって搬送用保持部115を傾動自在にさせる。またさらに、弾性部材117によって基板Wの吸着保持時の衝撃が吸収される。これにより、基板Wの吸着保持を適切に行うことができる。なお、この図6(b)に示す工程を、保持工程という場合がある。また、この保持工程において、搬送用保持部115で基板Wを吸着保持すると、後述するガス供給部106からガスを供給する前の任意のタイミングで、加工用保持部101による基板Wの吸着保持を解除する。 Thereafter, as shown in FIG. 6B, the transport holding unit 115 is lowered, and the processing surface Wg of the substrate W is sucked and held by the transport holding unit 115. At this time, the holding mechanism 115 for conveyance is made tiltable by the tilt mechanism 116. Furthermore, the elastic member 117 absorbs the impact when the substrate W is sucked and held. Thereby, the adsorption | suction holding | maintenance of the board | substrate W can be performed appropriately. The process shown in FIG. 6B may be referred to as a holding process. Further, in this holding step, when the substrate W is sucked and held by the transfer holding unit 115, the processing holding unit 101 sucks and holds the substrate W at any timing before gas is supplied from the gas supply unit 106 described later. To release.
 その後、図6(c)に示すようにガス供給部106から、加工用保持部101の保持面101aと基板Wの非加工面Wnとの間にガスを供給する。このガスにより、加工用保持部101から基板Wを剥離させる。ここで、上述したように加工用保持部101で基板Wを保持していない状態では、液供給部105から液が供給されている。そうすると、供給管104には液が残存した状態になっており、ガスの供給とともに液も供給される。そして、加工用保持部101の保持面101aと基板Wの非加工面Wnとの間には、液Lの膜が形成される。なお、この図6(c)に示す工程を、液供給工程という場合がある。また、本実施形態では、ガス供給部106からガスを供給することで、加工用保持部101の保持面101aと基板Wの非加工面Wnとの間に液Lを供給したが、液供給部105から液を供給してもよい。 Then, as shown in FIG. 6C, gas is supplied from the gas supply unit 106 between the holding surface 101a of the processing holding unit 101 and the non-processed surface Wn of the substrate W. With this gas, the substrate W is peeled from the processing holder 101. Here, as described above, the liquid is supplied from the liquid supply unit 105 in a state where the substrate W is not held by the processing holding unit 101. Then, the liquid remains in the supply pipe 104, and the liquid is supplied together with the supply of gas. A film of the liquid L is formed between the holding surface 101 a of the processing holding unit 101 and the non-processed surface Wn of the substrate W. The process shown in FIG. 6C may be referred to as a liquid supply process. In the present embodiment, the liquid L is supplied between the holding surface 101a of the processing holding unit 101 and the non-processed surface Wn of the substrate W by supplying gas from the gas supply unit 106. The liquid may be supplied from 105.
 その後、図6(c)に示すように液Lが基板Wから離れない高さまで、搬送用保持部115に保持された基板Wを上昇させる。なお、この図6(c)に示す工程を、上昇工程という場合がある。 Thereafter, as shown in FIG. 6C, the substrate W held by the transfer holding unit 115 is raised to a height at which the liquid L is not separated from the substrate W. Note that the process shown in FIG. 6C may be referred to as an ascending process.
 その後、図6(d)に示すように液Lが基板Wに接した状態で、搬送用保持部115に保持された基板Wを水平方向に移動させる。そうすると、基板Wと液Lとの接触面積が小さくなる。また、基板Wの水平移動によって、基板Wと液Lとの間に微小な空気の空間が形成される場合もある。さらに、基板Wの外周部が平面視で加工用保持部101の外側に位置した際、液Lが加工用保持部101の外側から排出される場合もある。このような種々の要因により、基板Wと液Lとの界面に生じる張力を小さくすることができる。なお、この図6(d)に示す工程を、移動工程という場合がある。 Thereafter, as shown in FIG. 6D, the substrate W held by the transfer holding unit 115 is moved in the horizontal direction while the liquid L is in contact with the substrate W. If it does so, the contact area of the board | substrate W and the liquid L will become small. Further, there is a case where a minute air space is formed between the substrate W and the liquid L by the horizontal movement of the substrate W. Further, when the outer peripheral portion of the substrate W is positioned outside the processing holding unit 101 in plan view, the liquid L may be discharged from the outside of the processing holding unit 101. Due to these various factors, the tension generated at the interface between the substrate W and the liquid L can be reduced. The process shown in FIG. 6D may be referred to as a movement process.
 その後、図6(e)に示すように基板Wの外周部が平面視で加工用保持部101の外側に位置した際、搬送用保持部115に保持された基板Wを上昇させる。そうすると、基板Wが液Lから離れる。この際、上述したように界面の張力が小さくなっているので、従来のように基板Wが損傷を被るのを抑制することができる。また、従来のように搬送用保持部115から基板Wが剥がれるのを抑制することもできる。 Thereafter, as shown in FIG. 6E, when the outer peripheral portion of the substrate W is positioned outside the processing holding portion 101 in plan view, the substrate W held by the transfer holding portion 115 is raised. Then, the substrate W is separated from the liquid L. At this time, since the interface tension is small as described above, it is possible to suppress the substrate W from being damaged as in the prior art. Further, it is possible to prevent the substrate W from being peeled off from the transfer holding portion 115 as in the past.
 なお、基板Wを上昇させるタイミングは、本実施形態に限定されない。例えば基板Wが水平方向に移動し、当該基板W全体が平面視で加工用保持部101の外側に位置した際に、基板Wを上昇させてもよい。 Note that the timing of raising the substrate W is not limited to this embodiment. For example, the substrate W may be raised when the substrate W moves in the horizontal direction and the entire substrate W is positioned outside the processing holder 101 in plan view.
 また、本実施形態では、基板Wを水平方向に移動させた後、上昇させたが、基板Wを斜め上方に移動させてもよい。すなわち、図6(d)に示した移動工程と図6(e)に示した上昇工程を同時に行ってもよい。 In the present embodiment, the substrate W is moved up in the horizontal direction and then raised, but the substrate W may be moved obliquely upward. That is, the moving process shown in FIG. 6 (d) and the ascending process shown in FIG. 6 (e) may be performed simultaneously.
 さらに、例えば水平方向に十分なスペースがある場合には、基板Wを上昇させずに、水平方向の移動のみによって基板Wを液Lから離れさせてもよい。 Further, for example, when there is sufficient space in the horizontal direction, the substrate W may be separated from the liquid L only by moving in the horizontal direction without raising the substrate W.
 以上のようにステップS6において、搬送ユニット110が受渡位置A0から基板Wを受け取り、当該基板が受渡位置A0から第2の洗浄ユニット140に搬送される。 As described above, in step S6, the transport unit 110 receives the substrate W from the delivery position A0, and the substrate is transported from the delivery position A0 to the second cleaning unit 140.
 そして、第2の洗浄ユニット140では、図7に示すように回転機構111aによって基板Wが搬送用保持部115に回転保持された状態で、スポンジ洗浄具142によって基板Wの非加工面Wnが洗浄される(図5のステップS7)。その後さらに、基板Wが搬送用保持部115に回転保持された状態で、エアノズル143から非加工面Wnにエアが噴射され、当該非加工面Wnが乾燥される。 Then, in the second cleaning unit 140, the non-processed surface Wn of the substrate W is cleaned by the sponge cleaning tool 142 in a state where the substrate W is rotated and held by the transport holding unit 115 by the rotation mechanism 111a as shown in FIG. (Step S7 in FIG. 5). After that, in a state where the substrate W is rotated and held by the transfer holder 115, air is jetted from the air nozzle 143 to the non-processed surface Wn, and the non-processed surface Wn is dried.
 これらステップS6、S7において基板Wが搬送用保持部115に保持される前に、搬送用保持部115は、第2の洗浄ユニット140のストーン洗浄具144とブラシ洗浄具145を用いて洗浄される。(図5のステップT1)。ストーン洗浄具144とブラシ洗浄具145による搬送用保持部115の洗浄は、回転機構111aによって搬送用保持部115を回転させながら行われる。なお、搬送用保持部115の洗浄は、ストーン洗浄具144とブラシ洗浄具145のいずれか一方で行われてもよいし、あるいは両方で行われてもよい。また、搬送用保持部115の洗浄は、ステップS6までの任意のタイミングで行われる。 Before the substrate W is held by the transfer holding unit 115 in these steps S6 and S7, the transfer holding unit 115 is cleaned using the stone cleaning tool 144 and the brush cleaning tool 145 of the second cleaning unit 140. . (Step T1 in FIG. 5). The conveyance holder 115 is cleaned by the stone cleaner 144 and the brush cleaner 145 while rotating the conveyance holder 115 by the rotation mechanism 111a. The conveyance holding unit 115 may be cleaned by either one of the stone cleaning tool 144 and the brush cleaning tool 145 or by both. In addition, the transport holding unit 115 is cleaned at an arbitrary timing up to step S6.
 次に、基板Wは搬送ユニット110により、第2の洗浄ユニット140から第1の洗浄ユニット130に搬送される。基板Wを搬送用保持部115から第1の洗浄ユニット130のスピンチャック(図示せず)に受け渡す際、傾動機構116によって搬送用保持部115を傾動自在にさせる。また、弾性部材117によって基板Wの受け渡し時の衝撃が吸収される。これにより、基板Wの受け渡しを適切に行うことができる。そして、第1の洗浄ユニット130では、洗浄液ノズル(図示せず)を用いて、基板Wの加工面Wgが洗浄液によって仕上洗浄される(図5のステップS8)。このステップS8では、加工面Wgが所望の清浄度まで洗浄し乾燥される。 Next, the substrate W is transported from the second cleaning unit 140 to the first cleaning unit 130 by the transport unit 110. When the substrate W is transferred from the transport holding unit 115 to the spin chuck (not shown) of the first cleaning unit 130, the tilting mechanism 116 makes the transport holding unit 115 tiltable. Further, the elastic member 117 absorbs an impact when the substrate W is delivered. Thereby, the delivery of the board | substrate W can be performed appropriately. In the first cleaning unit 130, the processed surface Wg of the substrate W is finished and cleaned with the cleaning liquid using a cleaning liquid nozzle (not shown) (step S8 in FIG. 5). In step S8, the processed surface Wg is washed to a desired cleanliness and dried.
 その後、基板Wは基板搬送装置32によって、第1の洗浄ユニット130から後処理装置5に搬送される。そして、後処理装置5では、基板Wをダイシングフレームに保持するマウント処理や、基板Wに貼り付けられた保護テープを剥離する剥離処理などの後処理が行われる(図5のステップS9)。 Thereafter, the substrate W is transported from the first cleaning unit 130 to the post-processing device 5 by the substrate transport device 32. Then, the post-processing apparatus 5 performs post-processing such as mounting processing for holding the substrate W on the dicing frame and peeling processing for peeling the protective tape attached to the substrate W (step S9 in FIG. 5).
 その後、すべての処理が施された基板Wは、搬出ステーション3のカセット載置台20のカセットCに搬送される。こうして、基板処理システム1における一連の基板処理が終了する。 Thereafter, the substrate W that has been subjected to all the processes is transferred to the cassette C of the cassette mounting table 20 of the unloading station 3. Thus, a series of substrate processing in the substrate processing system 1 is completed.
 以上、本実施形態によれば、基板Wを処理する基板処理システム1は、基板Wの加工面Wgを加工する際に、当該基板Wの加工面Wgと反対側の非加工面Wnを保持する加工用保持部101と、加工用保持部101の保持面101aに液を供給する液供給部105と、基板Wを搬送する際に、当該基板Wの加工面Wgを保持する搬送用保持部115と、搬送用保持部115を水平方向及び鉛直方向に移動させる移動機構114(111~113)と、加工用保持部101、液供給部105、搬送用保持部115及び移動機構114(111~113)を制御する制御部40と、を有する。また、基板処理システム1における基板処理方法は、加工用保持部101で非加工面Wnが保持された基板Wに対し、搬送用保持部115で加工面Wgを保持する保持工程と(図6(b))、その後、液供給部105から加工用保持部101の保持面101aと基板Wの非加工面Wnとの間に液Lを供給する液供給工程と(図6(c))、その後、液Lが基板Wから離れない高さまで、移動機構114によって搬送用保持部115に保持された基板Wを上昇させる上昇工程と(図6(c))、その後、液Lが基板Wに接した状態で、移動機構によって搬送用保持部115に保持された基板Wを水平方向に移動させる移動工程と(図6(d))と、を有する。これにより、基板Wと液Lとの界面に生じる張力を小さくすることができ、基板Wが損傷を被るのを抑制することができる。しかも、本実施形態では、特殊な構造や機構を設ける必要がなく、動作経路の変更のみで、上述した効果を享受することができる。 As described above, according to the present embodiment, the substrate processing system 1 that processes the substrate W holds the non-processed surface Wn opposite to the processed surface Wg of the substrate W when processing the processed surface Wg of the substrate W. The processing holding unit 101, the liquid supply unit 105 that supplies a liquid to the holding surface 101a of the processing holding unit 101, and the transfer holding unit 115 that holds the processing surface Wg of the substrate W when the substrate W is transferred. And a moving mechanism 114 (111 to 113) for moving the transport holding unit 115 in the horizontal and vertical directions, a processing holding unit 101, a liquid supply unit 105, a transport holding unit 115, and a moving mechanism 114 (111 to 113). And a control unit 40 for controlling). Further, the substrate processing method in the substrate processing system 1 includes a holding step of holding the processed surface Wg by the transfer holding unit 115 with respect to the substrate W on which the non-processed surface Wn is held by the processing holding unit 101 (FIG. 6 ( b)), and thereafter, a liquid supply step of supplying the liquid L between the holding surface 101a of the processing holding unit 101 and the non-processed surface Wn of the substrate W from the liquid supply unit 105 (FIG. 6C), and thereafter An ascending step of raising the substrate W held by the transfer holder 115 by the moving mechanism 114 to a height at which the liquid L is not separated from the substrate W (FIG. 6C), and then the liquid L contacts the substrate W. In this state, there is a moving step (FIG. 6D) of moving the substrate W held by the transfer holding unit 115 in the horizontal direction by the moving mechanism. Thereby, the tension generated at the interface between the substrate W and the liquid L can be reduced, and the substrate W can be prevented from being damaged. In addition, in the present embodiment, it is not necessary to provide a special structure or mechanism, and the above-described effects can be enjoyed only by changing the operation path.
 また、本実施形態によれば、図6(d)に示した移動工程において、基板Wの外周部が平面視で加工用保持部101の外側に位置した際、図6(e)に示したように移動機構114によって搬送用保持部115に保持された基板Wを上昇させる。あるいは、図6(d)に示した移動工程において、基板Wの全体が平面視で加工用保持部101の外側に位置した際、図6(e)に示したように移動機構114によって搬送用保持部115に保持された基板Wを上昇させる。いずれの場合においても、基板Wと液Lとの界面に生じる張力を小さくすることができる。 Further, according to the present embodiment, when the outer peripheral portion of the substrate W is positioned outside the processing holding portion 101 in a plan view in the moving step shown in FIG. In this way, the substrate W held by the transfer holding unit 115 is raised by the moving mechanism 114. Alternatively, in the movement step shown in FIG. 6D, when the entire substrate W is positioned outside the processing holding portion 101 in a plan view, it is transferred by the movement mechanism 114 as shown in FIG. The substrate W held by the holding unit 115 is raised. In either case, the tension generated at the interface between the substrate W and the liquid L can be reduced.
 また、本実施形態によれば、図6(d)に示した移動工程において、基板Wの外周部が平面視で加工用保持部101の外側に位置した際、液Lが加工用保持部101の外側から排出される。これにより、基板Wと液Lとの界面に生じる張力をさらに小さくすることができる。 Further, according to the present embodiment, when the outer peripheral portion of the substrate W is positioned outside the processing holding portion 101 in plan view in the moving step shown in FIG. It is discharged from the outside. Thereby, the tension generated at the interface between the substrate W and the liquid L can be further reduced.
 また、本実施形態によれば、基板処理システム1は、加工用保持部101の保持面101aにガスを供給するガス供給部106を有する。そして、図6(c)に示した液供給工程において、ガス供給部106から加工用保持部101の保持面101aと基板Wの非加工面Wnとの間にガスを供給する。これにより、加工用保持部101から基板Wを適切に剥離させることができる。 Further, according to the present embodiment, the substrate processing system 1 includes the gas supply unit 106 that supplies gas to the holding surface 101 a of the processing holding unit 101. 6C, a gas is supplied from the gas supply unit 106 between the holding surface 101a of the processing holding unit 101 and the non-processed surface Wn of the substrate W. Thereby, the board | substrate W can be appropriately peeled from the holding part 101 for a process.
 また、本実施形態によれば、基板処理システム1は、搬送用保持部115を側面視において傾動自在にする傾動機構116と、搬送用保持部115に設けられた弾性部材117と、を有する。傾動機構116によって、搬送用保持部115が基板Wを受け取る際又は受け渡す際、搬送用保持部115を傾動させることができる。また、弾性部材117によって、搬送用保持部115が基板Wを受け取る際又は受け渡す際、その衝撃を吸収することができる。その結果、基板Wを適切に受け取り(受け渡し)することができる。 Further, according to the present embodiment, the substrate processing system 1 includes the tilt mechanism 116 that allows the transport holding unit 115 to tilt in a side view, and the elastic member 117 provided on the transport holding unit 115. The tilting mechanism 116 can tilt the transport holding unit 115 when the transport holding unit 115 receives or transfers the substrate W. Further, the elastic member 117 can absorb the impact when the transport holding unit 115 receives or transfers the substrate W. As a result, the substrate W can be appropriately received (delivered).
 なお、本実施形態のステップS6の、図6(d)に示した移動工程において、回転機構(図示せず)によって加工用保持部101を回転させ、かつ回転機構111aによって搬送用保持部115を回転させながら、移動機構によって搬送用保持部115に保持された基板Wを水平方向に移動させてもよい。このように加工用保持部101と搬送用保持部115を回転させることによって、基板Wと液Lとの界面に生じる張力をさらに小さくすることができる。なお、加工用保持部101と搬送用保持部115は、いずれか一方を回転させればよく、すなわち加工用保持部101と搬送用保持部115を相対的に回転させればよい。 In the moving step shown in FIG. 6D in step S6 of the present embodiment, the processing holding unit 101 is rotated by a rotating mechanism (not shown), and the conveying holding unit 115 is moved by the rotating mechanism 111a. The substrate W held by the transfer holding unit 115 may be moved in the horizontal direction by the moving mechanism while being rotated. By rotating the processing holding unit 101 and the conveyance holding unit 115 in this manner, the tension generated at the interface between the substrate W and the liquid L can be further reduced. Any one of the processing holding unit 101 and the conveyance holding unit 115 may be rotated, that is, the processing holding unit 101 and the conveyance holding unit 115 may be relatively rotated.
 以上の実施形態の第2の洗浄ユニット140では、ステップS7において、スポンジ洗浄具142を基板Wの非加工面Wnに当接させた状態で、移動機構によって搬送用保持部115を水平方向に往復移動させて、非加工面Wnを洗浄してもよい。また、ステップT1においても同様に、ストーン洗浄具144又はブラシ洗浄具145を保持面115aに当接させた状態で、移動機構によって搬送用保持部115を水平方向に往復移動させて、保持面115aを洗浄してもよい。 In the second cleaning unit 140 of the above embodiment, the transport holder 115 is reciprocated in the horizontal direction by the moving mechanism in a state where the sponge cleaning tool 142 is in contact with the non-processed surface Wn of the substrate W in step S7. The non-processed surface Wn may be cleaned by moving. Similarly, in step T1, in a state where the stone cleaning tool 144 or the brush cleaning tool 145 is in contact with the holding surface 115a, the transfer holding unit 115 is reciprocated in the horizontal direction by the moving mechanism, thereby holding the holding surface 115a. May be washed.
 ここで、例えば特開2003-45841号公報は、被加工物を吸着搬送するための吸着パッドの吸着面を洗浄する洗浄装置を開示している。洗浄装置は、吸着面を研削するための研削面を有した研削板と、研削板を研削面の延在する方向に揺動させる揺動駆動手段とを備える。そして、揺動駆動手段によって揺動する研削板の研削面に吸着面を当接させながら、研削板の延在方向と略直交する方向に移動させることで、当該吸着面が洗浄される。 Here, for example, Japanese Patent Application Laid-Open No. 2003-45841 discloses a cleaning device that cleans the suction surface of a suction pad for sucking and conveying a workpiece. The cleaning device includes a grinding plate having a grinding surface for grinding the suction surface, and swing drive means for swinging the grinding plate in a direction in which the grinding surface extends. Then, the suction surface is cleaned by moving the suction surface in a direction substantially orthogonal to the extending direction of the grinding plate while bringing the suction surface into contact with the grinding surface of the grinding plate rocked by the rocking drive means.
 しかしながら、特開2003-45841号公報に開示された洗浄装置では、研削板が搖動する際、その搖動が一定でないと、研削板によって吸着パッドにかかる圧力が吸着面内で不均一になる場合がある。特に吸着パッドには、被加工物を吸着する際の衝撃を吸収するため、弾性部材が設けられている場合がある。この弾性部材の配置によっては、吸着パッドにかかる圧力がより不均一になる。 However, in the cleaning apparatus disclosed in Japanese Patent Application Laid-Open No. 2003-45841, when the grinding plate is rocked, if the rocking is not constant, the pressure applied to the suction pad by the grinding plate may be uneven in the suction surface. is there. In particular, the suction pad may be provided with an elastic member in order to absorb an impact when sucking the workpiece. Depending on the arrangement of the elastic member, the pressure applied to the suction pad becomes more uneven.
 そこで、本実施形態では、ステップS7又はステップT1において、搬送用保持部115を往復移動させて非加工面Wn又は保持面115aを洗浄するにあたり、当該非加工面Wn又は保持面115aにかかる圧力を一定にする。 Therefore, in this embodiment, in step S7 or step T1, the pressure applied to the non-processed surface Wn or the holding surface 115a is determined when the transport holding unit 115 is reciprocated to clean the non-processed surface Wn or the holding surface 115a. Keep it constant.
 ステップS7では、第2の洗浄ユニット140において、図8に示すようにスポンジ洗浄具142を基板Wの非加工面Wnに当接させた状態で、移動機構によって搬送用保持部115を水平方向に往復移動させて、非加工面Wnを洗浄する。図8において、(a)ではスポンジ洗浄具142が基板Wの中心部に当接する様子を示す。この際の基板Wの中心部の位置を中心位置Aという。(b)、(c)ではそれぞれ、スポンジ洗浄具142が基板Wの外周部に当接する様子を示す。この際の基板Wの中心部の位置を中心位置B、Cという。(d)では、基板Wの非加工面Wnの中心部の動きを、その高さ位置とともに模式的に示す。 In step S7, in the second cleaning unit 140, with the sponge cleaning tool 142 in contact with the non-processed surface Wn of the substrate W as shown in FIG. The non-processed surface Wn is cleaned by reciprocating. In FIG. 8, (a) shows a state where the sponge cleaning tool 142 contacts the central portion of the substrate W. The position of the center portion of the substrate W at this time is referred to as a center position A. (B) and (c) show how the sponge cleaning tool 142 abuts on the outer periphery of the substrate W, respectively. The position of the central portion of the substrate W at this time is referred to as center positions B and C. In (d), the movement of the central part of the non-processed surface Wn of the substrate W is schematically shown together with its height position.
 本実施形態のように弾性部材117が搬送用保持部115の外周部に設けられる場合、スポンジ洗浄具142が基板Wの外周部に当接する際に基板Wにかかる圧力は、基板Wの中央部にかかる圧力に比べて大きくなる。そこで、図8に示すように中心位置B、Cにおける基板Wの非加工面Wnの高さ位置を、中心位置Aにおける基板Wの非加工面Wnの高さ位置より、高くする。この高さ位置の調整は、例えば移動機構114によって搬送用保持部115を鉛直方向に移動させて行われる。 When the elastic member 117 is provided on the outer peripheral portion of the transport holding portion 115 as in the present embodiment, the pressure applied to the substrate W when the sponge cleaning tool 142 contacts the outer peripheral portion of the substrate W is the central portion of the substrate W. It becomes larger than the pressure applied to. Therefore, as shown in FIG. 8, the height position of the non-processed surface Wn of the substrate W at the center positions B and C is set higher than the height position of the non-processed surface Wn of the substrate W at the center position A. The adjustment of the height position is performed, for example, by moving the conveyance holder 115 in the vertical direction by the moving mechanism 114.
 かかる場合、スポンジ洗浄具142が基板Wの外周部に当接する際に基板Wの非加工面Wnにかかる圧力を小さくすることができる。その結果、非加工面Wnにかかる圧力を面内で一定にすることができ、圧力不均一に起因する基板Wの損傷を抑制することができる。また、このように基板Wの外周部にかかる圧力を小さくすることで、当該基板Wの外周部が損傷を被るのをさらに抑制することも可能となる。しかも、本実施形態では、特殊な構造や機構を設ける必要がなく、動作経路の変更のみで、上述した効果を享受することができる。 In this case, the pressure applied to the non-processed surface Wn of the substrate W when the sponge cleaning tool 142 contacts the outer peripheral portion of the substrate W can be reduced. As a result, the pressure applied to the non-processed surface Wn can be made constant within the surface, and damage to the substrate W due to pressure nonuniformity can be suppressed. Further, by reducing the pressure applied to the outer peripheral portion of the substrate W in this way, it is possible to further suppress the outer peripheral portion of the substrate W from being damaged. In addition, in the present embodiment, it is not necessary to provide a special structure or mechanism, and the above-described effects can be enjoyed only by changing the operation path.
 ステップT1において、第2の洗浄ユニット140で搬送用保持部115の保持面115aを洗浄する際も同様である。ステップT1では、ストーン洗浄具144又はブラシ洗浄具145を保持面115aに当接させた状態で、移動機構によって搬送用保持部115を水平方向に往復移動させて、保持面115aを洗浄する。そして、図8に示したように中心位置B、Cにおける保持面115aの高さ位置を、中心位置Aにおける保持面115aの高さ位置より、高くする。そうすると、保持面115aにかかる圧力を面内で一定にすることができ、当該保持面115aを適切に洗浄することができる。 The same applies when the second cleaning unit 140 cleans the holding surface 115a of the transport holding unit 115 in step T1. In step T1, with the stone cleaning tool 144 or the brush cleaning tool 145 in contact with the holding surface 115a, the transfer holding unit 115 is reciprocated in the horizontal direction by the moving mechanism to clean the holding surface 115a. Then, as shown in FIG. 8, the height position of the holding surface 115a at the center positions B and C is set higher than the height position of the holding surface 115a at the center position A. If it does so, the pressure concerning the holding surface 115a can be made constant within a surface, and the said holding surface 115a can be wash | cleaned appropriately.
 以上の実施形態では、弾性部材117が搬送用保持部115の外周部に設けられていたが、当該弾性部材117の配置は任意である。例えば図9に示すように弾性部材117は、搬送用保持部115の中央部に設けられていてもよい。そしてステップS7では、図10に示すようにスポンジ洗浄具142を基板Wの非加工面Wnに当接させた状態で、移動機構によって搬送用保持部115を水平方向に往復移動させて、非加工面Wnを洗浄してもよい。図10において、(a)ではスポンジ洗浄具142が基板Wの中心部に当接する様子を示す。この際の基板Wの中心部の位置を中心位置Aという。(b)、(c)ではそれぞれ、スポンジ洗浄具142が基板Wの外周部に当接する様子を示す。この際の基板Wの中心部の位置を中心位置B、Cという。(d)では、基板Wの非加工面Wnの中心部の動きを、その高さ位置とともに模式的に示す。 In the above embodiment, the elastic member 117 is provided on the outer peripheral portion of the conveyance holding portion 115, but the arrangement of the elastic member 117 is arbitrary. For example, as shown in FIG. 9, the elastic member 117 may be provided at the center of the transport holding portion 115. Then, in step S7, with the sponge cleaning tool 142 in contact with the non-processed surface Wn of the substrate W as shown in FIG. The surface Wn may be cleaned. In FIG. 10, (a) shows a state where the sponge cleaning tool 142 is in contact with the center of the substrate W. The position of the center portion of the substrate W at this time is referred to as a center position A. (B) and (c) show how the sponge cleaning tool 142 abuts on the outer periphery of the substrate W, respectively. The position of the central portion of the substrate W at this time is referred to as center positions B and C. In (d), the movement of the central part of the non-processed surface Wn of the substrate W is schematically shown together with its height position.
 本実施形態のように弾性部材117が搬送用保持部115の中央部に設けられる場合、スポンジ洗浄具142が基板Wの外周部に当接する際に基板Wにかかる圧力は、基板Wの中央部にかかる圧力に比べて小さくなる。そこで、図10に示すように中心位置Aにおける基板Wの非加工面Wnの高さ位置を、中心位置B、Cにおける基板Wの非加工面Wnの高さ位置より、高くする。 When the elastic member 117 is provided in the central portion of the transport holding portion 115 as in the present embodiment, the pressure applied to the substrate W when the sponge cleaning tool 142 contacts the outer peripheral portion of the substrate W is the central portion of the substrate W. It becomes smaller than the pressure applied to. Therefore, as shown in FIG. 10, the height position of the non-processed surface Wn of the substrate W at the center position A is set higher than the height position of the non-processed surface Wn of the substrate W at the center positions B and C.
 かかる場合、スポンジ洗浄具142が基板Wの外周部に当接する際に基板Wの非加工面Wnにかかる圧力を大きくすることができる。その結果、非加工面Wnにかかる圧力を面内で一定にすることができ、圧力不均一に起因する基板Wの損傷を抑制することができる。また、このように基板Wの外周部にかかる圧力を大きくすることで、基板Wの高さを調整しない場合に比べて、洗浄にかかる時間を短縮することも可能となる。 In this case, the pressure applied to the non-processed surface Wn of the substrate W when the sponge cleaning tool 142 contacts the outer peripheral portion of the substrate W can be increased. As a result, the pressure applied to the non-processed surface Wn can be made constant within the surface, and damage to the substrate W due to pressure nonuniformity can be suppressed. Further, by increasing the pressure applied to the outer peripheral portion of the substrate W in this way, it is possible to shorten the time required for cleaning as compared with the case where the height of the substrate W is not adjusted.
 ステップT1において、第2の洗浄ユニット140で搬送用保持部115の保持面115aを洗浄する際も同様である。ステップT1では、ストーン洗浄具144又はブラシ洗浄具145を保持面115aに当接させた状態で、移動機構によって搬送用保持部115を水平方向に往復移動させて、保持面115aを洗浄する。そして、図10に示したように中心位置Aにおける保持面115aの高さ位置を、中心位置B、Cにおける保持面115aの高さ位置より、高くする。そうすると、保持面115aにかかる圧力を面内で一定にすることができ、さらに洗浄時間を短縮することもできる。 The same applies when the second cleaning unit 140 cleans the holding surface 115a of the transport holding unit 115 in step T1. In step T1, with the stone cleaning tool 144 or the brush cleaning tool 145 in contact with the holding surface 115a, the transfer holding unit 115 is reciprocated in the horizontal direction by the moving mechanism to clean the holding surface 115a. Then, as shown in FIG. 10, the height position of the holding surface 115a at the center position A is set higher than the height position of the holding surface 115a at the center positions B and C. If it does so, the pressure concerning the holding surface 115a can be made constant in a surface, and also cleaning time can also be shortened.
 以上の実施形態では、基板Wの非加工面Wnにはデバイスを保護するために保護テープが貼り付けられていたが、デバイスの保護材はこれに限定されない。例えば基板Wの非加工面Wnには、支持ウェハやガラス基板などの支持基板が貼り合せられていてもよく、かかる場合でも本実施形態を適用することができる。 In the above embodiment, the protective tape is attached to the non-processed surface Wn of the substrate W in order to protect the device, but the protective material of the device is not limited to this. For example, a support substrate such as a support wafer or a glass substrate may be bonded to the non-processed surface Wn of the substrate W. Even in such a case, the present embodiment can be applied.
 今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The above-described embodiments may be omitted, replaced, and modified in various forms without departing from the scope and spirit of the appended claims.
  1 基板処理システム
  40 制御部
  101 加工用保持部
  101a 保持面
  105 液供給部
  114 移動機構
  115 搬送用保持部
  W 基板
  Wg 加工面
  Wn 非加工面
DESCRIPTION OF SYMBOLS 1 Substrate processing system 40 Control part 101 Processing holding part 101a Holding surface 105 Liquid supply part 114 Moving mechanism 115 Transfer holding part W Substrate Wg Processing surface Wn Non-processing surface

Claims (18)

  1. 基板の加工面を加工する基板処理システムであって、
    前記基板の加工面を加工する際に、当該基板の加工面と反対側の非加工面を保持する加工用保持部と、
    前記加工用保持部の保持面に液を供給する液供給部と、
    前記基板を搬送する際に、当該基板の加工面を保持する搬送用保持部と、
    前記搬送用保持部を水平方向及び鉛直方向に移動させる移動機構と、
    前記加工用保持部、前記液供給部、前記搬送用保持部及び前記移動機構を制御する制御部と、を有し、
    前記制御部は、
    前記加工用保持部で非加工面が保持された前記基板に対し、前記搬送用保持部で加工面を保持する保持工程と、
    その後、前記液供給部から前記加工用保持部の保持面と前記基板の非加工面との間に液を供給する液供給工程と、
    その後、前記液が前記基板から離れない高さまで、前記移動機構によって前記搬送用保持部に保持された前記基板を上昇させる上昇工程と、
    その後、前記液が前記基板に接した状態で、前記移動機構によって前記搬送用保持部に保持された前記基板を水平方向に移動させる移動工程と、を実行させる。
    A substrate processing system for processing a processed surface of a substrate,
    When processing the processed surface of the substrate, a processing holding portion for holding a non-processed surface opposite to the processed surface of the substrate,
    A liquid supply unit for supplying liquid to the holding surface of the processing holding unit;
    A carrier holding unit for holding a processed surface of the substrate when the substrate is conveyed;
    A moving mechanism for moving the holding unit in the horizontal direction and the vertical direction;
    A control unit that controls the processing holding unit, the liquid supply unit, the transfer holding unit, and the moving mechanism;
    The controller is
    A holding step of holding the processed surface by the holding unit for conveyance with respect to the substrate on which the non-processed surface is held by the processing holding unit;
    Then, a liquid supply step of supplying a liquid between the holding surface of the processing holding unit and the non-processed surface of the substrate from the liquid supply unit,
    Thereafter, the ascending step of ascending the substrate held by the transfer holder by the moving mechanism until the liquid does not leave the substrate;
    Thereafter, a moving step of moving the substrate held by the transfer holding unit in the horizontal direction by the moving mechanism while the liquid is in contact with the substrate is performed.
  2. 請求項1に記載の基板処理システムにおいて、
    前記制御部は、前記移動工程において、前記基板の外周部が平面視で前記加工用保持部の外側に位置した際、前記移動機構によって前記搬送用保持部に保持された前記基板を上昇させ、当該基板を前記液から離す。
    The substrate processing system according to claim 1,
    In the moving step, the control unit raises the substrate held by the transfer holding unit by the moving mechanism when the outer peripheral portion of the substrate is positioned outside the processing holding unit in a plan view, The substrate is separated from the liquid.
  3. 請求項1に記載の基板処理システムにおいて、
    前記制御部は、前記移動工程において、前記基板全体が平面視で前記加工用保持部の外側に位置した際、前記移動機構によって前記搬送用保持部に保持された前記基板を上昇させ、当該基板を前記液から離す。
    The substrate processing system according to claim 1,
    In the moving step, the control unit raises the substrate held by the transfer holding unit by the moving mechanism when the entire substrate is positioned outside the processing holding unit in a plan view. Is removed from the liquid.
  4. 請求項1に記載の基板処理システムにおいて、
    前記制御部は、前記移動工程において、前記基板の外周部が平面視で前記加工用保持部の外側に位置した際、前記液を前記加工用保持部の外側から排出させる。
    The substrate processing system according to claim 1,
    In the moving step, the control unit discharges the liquid from the outside of the processing holding unit when the outer peripheral portion of the substrate is positioned outside the processing holding unit in a plan view.
  5. 請求項1に記載の基板処理システムにおいて、
    前記加工用保持部の保持面にガスを供給するガス供給部を有し、
    前記制御部は、前記液供給工程において、前記ガス供給部から前記加工用保持部の保持面と前記基板の非加工面との間にガスを供給する。
    The substrate processing system according to claim 1,
    A gas supply unit for supplying gas to the holding surface of the processing holding unit;
    In the liquid supply step, the control unit supplies gas from the gas supply unit between a holding surface of the processing holding unit and a non-processed surface of the substrate.
  6. 請求項1に記載の基板処理システムにおいて、
    前記加工用保持部と前記搬送用保持部を相対的に回転させる回転機構を有し、
    前記制御部は、前記移動工程において、前記回転機構によって前記加工用保持部と前記搬送用保持部を相対的に回転させながら、前記移動機構によって前記搬送用保持部に保持された前記基板を水平方向に移動させる。
    The substrate processing system according to claim 1,
    A rotation mechanism that relatively rotates the processing holding unit and the conveyance holding unit;
    In the moving step, the control unit horizontally rotates the substrate held on the transfer holding unit by the moving mechanism while relatively rotating the processing holding unit and the transfer holding unit by the rotating mechanism. Move in the direction.
  7. 請求項1に記載の基板処理システムにおいて、
    前記搬送用保持部を側面視において傾動自在にする傾動機構と、
    前記搬送用保持部に設けられた弾性部材と、を有する。
    The substrate processing system according to claim 1,
    A tilting mechanism for tilting the holding unit for conveyance in a side view;
    And an elastic member provided in the holding unit for conveyance.
  8. 請求項7に記載の基板処理システムにおいて、
    洗浄面を洗浄する洗浄具を有し、
    前記洗浄面は、前記基板の非加工面又は前記搬送用保持部の保持面であり、
    前記弾性部材は、前記搬送用保持部の外周部に設けられ、
    前記制御部は、前記洗浄具を前記洗浄面に当接させた状態で、前記移動機構によって前記搬送用保持部を水平方向に往復移動させて、前記洗浄面を洗浄する洗浄工程を実行させ、当該洗浄工程において、前記洗浄具が前記洗浄面の外周部に当接する際の当該洗浄面の高さ位置を、前記洗浄具が前記洗浄面の中心部に当接する際の当該洗浄面の高さ位置より、高くさせる。
    The substrate processing system according to claim 7, wherein
    A cleaning tool for cleaning the cleaning surface;
    The cleaning surface is a non-processed surface of the substrate or a holding surface of the holding unit for conveyance,
    The elastic member is provided on an outer peripheral portion of the conveyance holding portion,
    The controller is configured to perform a cleaning step of cleaning the cleaning surface by reciprocating the transport holding unit in a horizontal direction by the moving mechanism in a state where the cleaning tool is in contact with the cleaning surface. In the cleaning step, the height position of the cleaning surface when the cleaning tool contacts the outer peripheral portion of the cleaning surface, and the height of the cleaning surface when the cleaning tool contacts the central portion of the cleaning surface Make it higher than the position.
  9. 請求項7に記載の基板処理システムにおいて、
    洗浄面を洗浄する洗浄具を有し、
    前記洗浄面は、前記基板の非加工面又は前記搬送用保持部の保持面であり、
    前記弾性部材は、前記搬送用保持部の中央部に設けられ、
    前記制御部は、前記洗浄具を前記洗浄面に当接させた状態で、前記移動機構によって前記搬送用保持部を水平方向に往復移動させて、前記洗浄面を洗浄する洗浄工程を実行させ、当該洗浄工程において、前記洗浄具が前記洗浄面の中心部に当接する際の当該洗浄面の高さ位置を、前記洗浄具が前記洗浄面の外周部に当接する際の当該洗浄面の高さ位置より、高くさせる。
    The substrate processing system according to claim 7, wherein
    A cleaning tool for cleaning the cleaning surface;
    The cleaning surface is a non-processed surface of the substrate or a holding surface of the holding unit for conveyance,
    The elastic member is provided in a central portion of the holding unit for conveyance,
    The controller is configured to perform a cleaning step of cleaning the cleaning surface by reciprocating the transport holding unit in a horizontal direction by the moving mechanism in a state where the cleaning tool is in contact with the cleaning surface. In the cleaning step, the height position of the cleaning surface when the cleaning tool contacts the center of the cleaning surface, and the height of the cleaning surface when the cleaning tool contacts the outer periphery of the cleaning surface Make it higher than the position.
  10. 基板処理システムを用いて基板の加工面を加工する基板処理方法であって、
    前記基板処理システムは、
    前記基板の加工面を加工する際に、当該基板の加工面と反対側の非加工面を保持する加工用保持部と、
    前記加工用保持部の保持面に液を供給する液供給部と、
    前記基板を搬送する際に、当該基板の加工面を保持する搬送用保持部と、
    前記搬送用保持部を水平方向及び鉛直方向に移動させる移動機構と、を有し、
    前記基板処理方法は、
    前記加工用保持部で非加工面が保持された前記基板に対し、前記搬送用保持部で加工面を保持する保持工程と、
    その後、前記液供給部から前記加工用保持部の保持面と前記基板の非加工面との間に液を供給する液供給工程と、
    その後、前記液が前記基板から離れない高さまで、前記移動機構によって前記搬送用保持部に保持された前記基板を上昇させる上昇工程と、
    その後、前記液が前記基板に接した状態で、前記移動機構によって前記搬送用保持部に保持された前記基板を水平方向に移動させる移動工程と、を有する。
    A substrate processing method for processing a processed surface of a substrate using a substrate processing system,
    The substrate processing system includes:
    When processing the processed surface of the substrate, a processing holding portion for holding a non-processed surface opposite to the processed surface of the substrate,
    A liquid supply unit for supplying liquid to the holding surface of the processing holding unit;
    A carrier holding unit for holding a processed surface of the substrate when the substrate is conveyed;
    A moving mechanism for moving the holding unit for conveyance in a horizontal direction and a vertical direction,
    The substrate processing method includes:
    A holding step of holding the processed surface by the holding unit for conveyance with respect to the substrate on which the non-processed surface is held by the processing holding unit;
    Then, a liquid supply step of supplying a liquid between the holding surface of the processing holding unit and the non-processed surface of the substrate from the liquid supply unit,
    Thereafter, the ascending step of ascending the substrate held by the transfer holder by the moving mechanism until the liquid does not leave the substrate;
    And a moving step of moving the substrate held by the transfer holding unit in the horizontal direction by the moving mechanism in a state where the liquid is in contact with the substrate.
  11. 請求項10に記載の基板処理方法において、
    前記移動工程において、前記基板の外周部が平面視で前記加工用保持部の外側に位置した際、前記移動機構によって前記搬送用保持部に保持された前記基板を上昇させ、当該基板を前記液から離す。
    The substrate processing method according to claim 10,
    In the moving step, when the outer peripheral portion of the substrate is positioned outside the processing holding portion in a plan view, the substrate held by the transfer holding portion is raised by the moving mechanism, and the substrate is moved to the liquid Move away from.
  12. 請求項10に記載の基板処理方法において、
    前記移動工程において、前記基板全体が平面視で前記加工用保持部の外側に位置した際、前記移動機構によって前記搬送用保持部に保持された前記基板を上昇させ、当該基板を前記液から離す。
    The substrate processing method according to claim 10,
    In the moving step, when the entire substrate is positioned outside the processing holding unit in a plan view, the moving mechanism lifts the substrate held by the transfer holding unit and separates the substrate from the liquid. .
  13. 請求項10に記載の基板処理方法において、
    前記移動工程において、前記基板の外周部が平面視で前記加工用保持部の外側に位置した際、前記液が前記加工用保持部の外側から排出される。
    The substrate processing method according to claim 10,
    In the moving step, when the outer peripheral portion of the substrate is positioned outside the processing holding portion in plan view, the liquid is discharged from the outside of the processing holding portion.
  14. 請求項10に記載の基板処理方法において、
    前記液供給工程において、ガス供給部から前記加工用保持部の保持面と前記基板の非加工面との間にガスを供給する。
    The substrate processing method according to claim 10,
    In the liquid supply step, gas is supplied from a gas supply unit between a holding surface of the processing holding unit and a non-processed surface of the substrate.
  15. 請求項10に記載の基板処理方法において、
    前記移動工程において、回転機構によって前記加工用保持部と前記搬送用保持部を相対的に回転させながら、前記移動機構によって前記搬送用保持部に保持された前記基板を水平方向に移動させる。
    The substrate processing method according to claim 10,
    In the moving step, the substrate held by the transfer holding unit is moved in the horizontal direction by the moving mechanism while the processing holding unit and the transfer holding unit are relatively rotated by a rotation mechanism.
  16. 請求項10に記載の基板処理方法において、
    前記保持工程において、前記搬送用保持部で加工面を保持する際、傾動機構によって前記搬送用保持部を側面視において傾動自在にし、かつ前記搬送用保持部に設けられた弾性部材によって衝撃を吸収する。
    The substrate processing method according to claim 10,
    In the holding step, when the processing surface is held by the transfer holding unit, the transfer holding unit is tiltable in a side view by a tilting mechanism, and the elastic member provided in the transfer holding unit absorbs an impact. To do.
  17. 請求項16に記載の基板処理方法において、
    洗浄具を洗浄面に当接させた状態で、前記移動機構によって前記搬送用保持部を水平方向に往復移動させて、前記洗浄面を洗浄する洗浄工程を有し、
    前記洗浄面は、前記基板の非加工面又は前記搬送用保持部の保持面であり、
    前記弾性部材は、前記搬送用保持部の外周部に設けられ、
    前記洗浄工程において、前記洗浄具が前記洗浄面の外周部に当接する際の当該洗浄面の高さ位置を、前記洗浄具が前記洗浄面の中心部に当接する際の当該洗浄面の高さ位置より、高くさせる。
    The substrate processing method according to claim 16, wherein
    In a state where the cleaning tool is in contact with the cleaning surface, the transport mechanism is reciprocated horizontally by the moving mechanism to clean the cleaning surface,
    The cleaning surface is a non-processed surface of the substrate or a holding surface of the holding unit for conveyance,
    The elastic member is provided on an outer peripheral portion of the conveyance holding portion,
    In the cleaning step, the height position of the cleaning surface when the cleaning tool contacts the outer peripheral portion of the cleaning surface, and the height of the cleaning surface when the cleaning tool contacts the central portion of the cleaning surface Make it higher than the position.
  18. 請求項16に記載の基板処理方法において、
    洗浄具を洗浄面に当接させた状態で、前記移動機構によって前記搬送用保持部を水平方向に往復移動させて、前記洗浄面を洗浄する洗浄工程を有し、
    前記洗浄面は、前記基板の非加工面又は前記搬送用保持部の保持面であり、
    前記弾性部材は、前記搬送用保持部の中央部に設けられ、
    前記洗浄工程において、前記洗浄具が前記洗浄面の中心部に当接する際の当該洗浄面の高さ位置を、前記洗浄具が前記洗浄面の外周部に当接する際の当該洗浄面の高さ位置より、高くさせる。
    The substrate processing method according to claim 16, wherein
    In a state where the cleaning tool is in contact with the cleaning surface, the transport mechanism is reciprocated horizontally by the moving mechanism to clean the cleaning surface,
    The cleaning surface is a non-processed surface of the substrate or a holding surface of the holding unit for conveyance,
    The elastic member is provided in a central portion of the holding unit for conveyance,
    In the cleaning step, the height position of the cleaning surface when the cleaning tool contacts the central portion of the cleaning surface, and the height of the cleaning surface when the cleaning tool contacts the outer peripheral portion of the cleaning surface. Make it higher than the position.
PCT/JP2019/018266 2018-05-11 2019-05-07 Substrate treatment system and substrate treatment method WO2019216314A1 (en)

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