CN116075394A - Processing device and processing method - Google Patents

Processing device and processing method Download PDF

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Publication number
CN116075394A
CN116075394A CN202180054884.7A CN202180054884A CN116075394A CN 116075394 A CN116075394 A CN 116075394A CN 202180054884 A CN202180054884 A CN 202180054884A CN 116075394 A CN116075394 A CN 116075394A
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China
Prior art keywords
grinding
substrate
water
wafer
processing
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CN202180054884.7A
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Chinese (zh)
Inventor
児玉宗久
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN116075394A publication Critical patent/CN116075394A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

A processing apparatus that processes a substrate, the processing apparatus comprising: a grinding mechanism provided with an annular grinding tool for processing the substrate held by the holding mechanism; a grinding water supply mechanism for supplying grinding water to the processing surface of the substrate; and an adjustment water supply mechanism for supplying adjustment water for cooling an arbitrary position on the processing surface of the substrate.

Description

Processing device and processing method
Technical Field
The present disclosure relates to a processing apparatus and a processing method.
Background
Patent document 1 discloses a grinding apparatus including a grinding wheel for grinding a workpiece held on a holding table (holding disk), a grinding water supply unit for supplying grinding water to a grinding surface of the workpiece and the grinding wheel, and a grinding water supply source communicating with the grinding water supply unit.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2015-30055
Disclosure of Invention
Problems to be solved by the invention
In the technique according to the present disclosure, in a processing apparatus that processes a substrate while supplying grinding water, the substrate is appropriately processed into a desired shape.
Solution for solving the problem
One aspect of the present disclosure is a processing apparatus that processes a substrate, the processing apparatus including: a grinding mechanism provided with an annular grinding tool for processing the substrate held by the holding mechanism; a grinding water supply mechanism for supplying grinding water to the processing surface of the substrate; and an adjustment water supply mechanism for supplying adjustment water for cooling an arbitrary position on the processing surface of the substrate.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, in a processing apparatus that processes a substrate while supplying grinding water, the substrate can be appropriately processed into a desired shape.
Drawings
Fig. 1 is a plan view schematically showing the outline of the structure of a processing apparatus according to the present embodiment.
Fig. 2 is a side view showing an example of the structure of various grinding mechanisms and a holding disk.
Fig. 3 is an explanatory diagram showing a case of grinding processing of a wafer.
Fig. 4 is a longitudinal cross-sectional view showing a grinding water flow path formed inside various grinding mechanisms.
Fig. 5 is a longitudinal sectional view schematically showing an outline of the structure of the grinding wheel.
Fig. 6 is an explanatory view schematically showing a case of supplying flange grinding water.
Fig. 7 is a longitudinal cross-sectional view schematically showing an outline of the structure of the adjustment water supply mechanism.
Fig. 8 is a perspective view showing another configuration example of the regulated water supply mechanism.
Fig. 9 is a graph showing an example of a wafer grinding result when the flange grinding water and the adjustment water from the outer nozzle are supplied.
Fig. 10 is a graph showing an example of the wafer grinding result when the supply amount of the adjustment water from the outer nozzle is changed.
Detailed Description
In recent years, in a process for manufacturing a semiconductor device, a semiconductor substrate (hereinafter, referred to as a "wafer") having a plurality of devices such as electronic circuits formed on a surface thereof is subjected to grinding of the wafer to thin the wafer.
The grinding of the wafer is performed by, for example, bringing a grinding tool of the grinding mechanism into contact with the grinding surface of the wafer while rotating the holding mechanism in a state in which the surface of the wafer on the side opposite to the grinding surface is held by the holding mechanism. In addition, during the grinding of the wafer, a grinding water is supplied to remove frictional heat, grinding dust, and the like generated by the grinding, and to keep the grinding atmosphere and the grinding tool clean.
Patent document 1 discloses a grinding apparatus that grinds a workpiece (wafer) while supplying grinding water to the workpiece. According to the processing apparatus described in patent document 1, grinding water is supplied to the grinding surface of the wafer and the grinding wheel via a flow path formed through the inside of the spindle, the attachment, and the grinding wheel, and a grinding water supply port formed in the lower portion opening of the grinding wheel. By supplying the grinding water at the time of grinding the wafer in this way, the frictional heat, the grinding dust, and the like generated by the grinding are removed.
However, the inventors of the present invention have conducted intensive studies to find that: if grinding is performed while the grinding water is supplied by such a conventional method, the wafer after the grinding treatment may not be formed into a desired shape and flatness (TTV: total Thickness Variation: total thickness change). Specifically, it was found that: in the case where grinding water is supplied only from a grinding water supply port formed in the lower portion of the grinding wheel as in patent document 1, there is a possibility that friction heat is not properly removed and expansion is locally generated in the surface of the wafer (holding mechanism), and as a result, the grinding amount at the expansion portion increases to deteriorate TTV.
In the technique according to the present disclosure, in a processing apparatus that processes a substrate while supplying grinding water, the substrate is appropriately processed into a desired shape. Next, a processing apparatus and a processing method according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and repetitive description thereof will be omitted.
In the processing apparatus 1 according to the present embodiment, the wafer W as the substrate is ground and thinned. The wafer W is, for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer. A device is formed on the wafer W, and a surface of the wafer W opposite to the device-forming surface is subjected to a process such as grinding. In the following description, a surface on which devices are formed in the wafer W, that is, a surface on which a holding disk serving as a holding mechanism holds the devices is referred to as a "holding surface", and a surface on which a process such as grinding is performed on the side opposite to the holding surface is referred to as a "grinding surface".
As shown in fig. 1, the processing apparatus 1 has a structure in which a carry-in/out station 2 and a processing station 3 are integrally connected. In the carry-in/out station 2, for example, a cassette C capable of storing a plurality of wafers W is carried in and out between the outside. The processing station 3 includes various processing apparatuses for performing desired processing on the wafer W.
The loading/unloading station 2 is provided with a cassette loading table 10. A wafer transfer region 20 is provided adjacent to the cassette stage 10 on the Y-axis forward direction side of the cassette stage 10. A wafer transfer device 22 is provided in the wafer transfer region 20, and the wafer transfer device 22 is configured to be movable on a transfer path 21 extending in the X-axis direction.
The wafer carrier 22 has a carrier fork 23 for holding and carrying the wafer W. The conveyance fork 23 is configured to be movable in the horizontal direction and the vertical direction, and movable around the horizontal axis and the vertical axis. The wafer transfer device 22 is configured to be capable of transferring the wafer W to the cassette C of the cassette mounting stage 10, the alignment section 50 described later, and the first cleaning section 60 described later.
In the processing station 3, the wafer W is subjected to processing such as grinding and cleaning. The processing station 3 includes a conveying unit 30 for conveying the wafer W, a grinding unit 40 for grinding the wafer W, an alignment unit 50 for adjusting the horizontal direction orientation of the wafer W before the grinding, and first and second cleaning units 60 and 70 for cleaning the wafer W before or after the grinding.
The conveying unit 30 is an articulated robot including a plurality of, for example, three arms 31. The three arms 31 are configured to be rotatable respectively. A transfer pad 32 for sucking and holding the wafer W is attached to the arm 31 at the front end. The arm 31 at the base end is attached to a lifting mechanism 33 that lifts and lowers the arm 31 in the vertical direction. The transfer unit 30 is configured to be capable of transferring the wafer W to the transfer position A0 of the grinding unit 40, the alignment unit 50, the first cleaning unit 60, and the second cleaning unit 70.
The grinding section 40 is provided with a rotary table 41. The turntable 41 is provided with four holding trays 42 serving as holding mechanisms for holding the wafers W by suction. The holding tray 42 is a porous holding tray, for example, and holds the holding surface of the wafer W by suction. The surface of the holding plate 42 has a convex shape in which the central portion protrudes from the end portions in side view. The protrusion of the center portion is minute, but in fig. 2, the protrusion of the center portion of the holding plate 42 is greatly illustrated for clarity of explanation.
As shown in fig. 2, the holding tray 42 is held by a holding tray seat 43. The holding disk holder 43 is provided with a tilt adjustment unit 44 for adjusting the relative tilt between various grinding mechanisms (a rough grinding unit 80, a middle grinding unit 90, and a finish grinding unit 100 described later) and the holding disk 42. The inclination adjustment unit 44 can incline the holding disk 42 and the holding disk seat 43, and thereby can adjust the relative inclination between the upper surfaces of the holding disk 42 and the various grinding mechanisms at the machining positions A1 to A3. The configuration of the inclination adjustment unit 44 is not particularly limited, and may be arbitrarily selected as long as the relative angle (parallelism) of the holding plate 42 with respect to the grindstone can be adjusted.
The four holding disks 42 are movable to the delivery position A0 and the processing positions A1 to A3 by rotating the turntable 41. The four holding plates 42 are each rotatable about the vertical axis by a rotation mechanism (not shown).
At the transfer position A0, the wafer W transferred by the transfer unit 30 is transferred. A rough grinding section 80 is disposed at the processing position A1, and rough grinding is performed on the wafer W. A center grinding section 90 is disposed at the processing position A2, and performs center grinding on the wafer W. A finish grinding unit 100 is disposed at the processing position A3 to finish grind the wafer W.
The rough grinding section 80 includes a rough grinding wheel 81 having an annular rough grinding tool 81a on the lower surface, a mount 82 for supporting the rough grinding wheel 81, a main shaft 83 for rotating the rough grinding wheel 81 via the mount 82, and a driving section 84 incorporating a motor (not shown), for example. The rough grinding section 80 is movable in the vertical direction along a pillar 85 shown in fig. 1.
Here, as described above, the holding disk 42 has a convex shape at the center portion of the holding surface. Therefore, in the grinding process of the wafer W using the rough grinding section 80, as shown in the thick line section of fig. 3, a part of the annular rough grinding tool 81a contacts the wafer W as the processing point R. More specifically, the annular rough grinding tool 81a is in contact with the portion from the center portion to the outer peripheral end portion of the wafer W in a circular arc shape, and the holding disk 42 and the rough grinding wheel 81 are rotated in this state, whereby the entire surface of the wafer W is ground.
As shown in fig. 4, a first grinding water flow path 86a penetrating in the axial direction of the spindle 83 is formed in the spindle 83. A grinding water supply source 87 is connected to one end of the first grinding water flow path 86a. The other end of the first grinding water channel 86a communicates with a second grinding water channel 86b, which will be described later, formed in the mount 82.
As shown in fig. 5, the rough grinding wheel 81 has a flange 81b and a radiation plate 81c mounted to a central lower portion of the mount 82. An annular rough grinding tool 81a is attached to a radially outer lower portion of the flange 81 b. The diameter of the radiation plate 81c is smaller than the inner diameter of the rough grinding tool 81a attached to the lower portion of the flange 81 b.
A second grinding water flow path 86b is formed in the mount 82. One end of the second grinding water flow path 86b communicates with the first grinding water flow path 86a. The other end of the second grinding water flow path 86b is connected to a dispersion chamber 88 having a radial slit formed between the mount 82 and the radiation plate 81c. The dispersion chamber 88 communicates with a gap between the mount 82 and the radiation plate 81c, which is the third grinding water flow path 86 c.
Then, the grinding water from the grinding water supply source 87 reaches the dispersion chamber 88 via the first grinding water flow path 86a and the second grinding water flow path 86b as shown by black arrows in fig. 6, and is dispersed in the radial direction of the radiation plate 81c on the upper surface of the radiation plate 81c. Thereafter, the grinding water dispersed in the radial direction in the dispersion chamber 88 is supplied to the rough grinding tool 81a and the grinding surface of the wafer W through the third grinding water flow path 86c, the lower surface of the mount 82, and the flange 81b by the centrifugal force generated by the rotation of the main shaft 83 (rough grinding wheel 81). The grinding water from the grinding water supply source 87 removes the grinding dust and the like generated by grinding from the third grinding water flow path 86c, the lower surface of the mount 82, the flange 81b, and the rough grinding tool 81a, cleans them, and removes frictional heat generated by grinding from the rough grinding tool 81a and the grinding surface of the wafer W. In the following description, the grinding water supplied from the grinding water supply source 87 to the wafer W via the mount 82 may be referred to as "flange grinding water".
As shown in fig. 1, a thickness measuring mechanism 110 for measuring the thickness of the wafer W during or after the rough grinding process is provided at the processing position A1. The thickness measuring mechanism 110 may be arbitrarily selected, and includes, for example, a contact sensor (not shown) or a noncontact sensor (not shown), and an arithmetic unit (not shown).
The middle grinding portion 90 has the same structure as the rough grinding portion 80. That is, the middle grinding section 90 includes a middle grinding wheel 91 including an annular middle grinding tool 91a, a mounting member 92, a main shaft 93, a driving section 94, and a stay 95. Further, a grinding water flow path 96 for supplying grinding water from a grinding water supply source 97 to the grinding surfaces of the intermediate grinding tool 91a and the wafer W, and a dispersion chamber 98 are formed in the intermediate grinding section 90. In addition, the abrasive grains of the intermediate grinding tool have a smaller grain size than the abrasive grains of the coarse grinding tool.
In addition, at the processing position A2, a thickness measuring mechanism 110 for measuring the thickness of the wafer W during or after the grinding process is set as in the processing position A1. The thickness measuring mechanism 110 may be arbitrarily selected, and includes, for example, a contact sensor (not shown) or a noncontact sensor (not shown), and an arithmetic unit (not shown).
The finish grinding section 100 has the same structure as the rough grinding section 80. Specifically, the finish grinding section 100 includes a finish grinding wheel 101 including an annular refiner 101a, a mount 102, a spindle 103, a drive section 104, and a stay 105. Further, a grinding water flow path 106 for supplying grinding water from a grinding water supply source 107 to the grinding surface of the refiner 101a and the wafer W, and a dispersion chamber 108 are formed in the finish grinding section 100. In addition, the abrasive grains of the intermediate grinding tool have a smaller grain size than the abrasive grains of the coarse grinding tool.
In addition, in the processing position A3, a thickness measuring mechanism 110 that measures the thickness of the wafer W during or after the finish grinding process is provided in the same manner as in the processing positions A1 and A2. The thickness measuring mechanism 110 may be arbitrarily selected, and includes, for example, a non-contact sensor (not shown) and an arithmetic unit (not shown). In addition, at the addition position A3, the thickness measuring mechanism 110 can obtain the thickness distribution of the wafer W from the measurement results (the thickness of the wafer W) of the plurality of points of the sensor, and calculate the TTV of the wafer W.
In addition, an adjustment water supply mechanism that supplies adjustment water to the grinding surface of the wafer W during the finish grinding process of the wafer W is provided at the processing position A3 (finish grinding unit 100). As the adjustment water supply means, at least one of the outer nozzle 120 provided above the holding disk 42 and the inner nozzle 130 provided below the finish grinding wheel 101 can be selected.
As shown in fig. 7, the outer nozzle 120 is provided above the holding disk 42, and is configured to be able to supply the adjustment water from the adjustment water supply source 121 to the grinding surface of the wafer W on the radial outside of the refiner 101 a. The outer nozzle 120 is configured to be able to arbitrarily set the supply position of the adjustment water to the grinding surface of the wafer W by the operation of the supply position adjustment mechanism 122. The supply position adjustment mechanism 122 is not particularly limited in structure, and may be configured to be capable of adjusting the relative position of the outer nozzle 120 with respect to the grinding surface of the wafer W by, for example, scanning the outer nozzle 120 over the wafer W. For example, the outer nozzle 120 may be configured to be capable of adjusting the inclination angle with respect to the grinding surface of the wafer W, so that the supply direction of the adjustment water may be set. The outer nozzle 120 is preferably configured to be capable of setting the supply amount of the adjustment water to the grinding surface of the wafer W by the flow rate adjustment mechanism 123.
As shown in fig. 7, the inner nozzle 130 is provided below the finish grinding wheel 101, and is configured to be able to supply the conditioning water from the conditioning water supply source 131 to the grinding surface of the wafer W on the radially inner side of the finish grinding tool 101 a. The inner nozzle 130 is configured to be able to arbitrarily set the supply position of the adjustment water to the grinding surface of the wafer W by the operation of the supply position adjustment mechanism 132. The structure of the supply position adjustment mechanism 132 is not particularly limited, and may be configured such that the supply position of the adjustment water can be set by moving the inner nozzle 130, for example. For example, the inner nozzle 130 may be configured to be adjustable in inclination angle with respect to the horizontal direction, so that the supply direction of the adjustment water can be set. The inner nozzle 130 is preferably configured to be capable of setting the supply amount of the adjustment water to the grinding surface of the wafer W by the flow rate adjustment mechanism 133.
Further, as described above, the outer nozzle 120 and the inner nozzle 130 are desirably configured to be movable in any direction by the operation of the supply position adjusting mechanisms 122 and 132 to supply the adjustment water to any position on the grinding surface. However, from the viewpoint of properly removing the grinding dust, frictional heat, and the like generated during grinding of the wafer W, it is particularly desirable that the outer nozzle 120 and the inner nozzle 130 are configured to be movable at least along the processing point R shown in fig. 3.
The method of adjusting the supply position of the adjustment water to the working surface by the supply position adjusting mechanisms 122 and 132 and the method of adjusting the supply amount of the adjustment water to the working surface by the flow rate adjusting mechanisms 123 and 133 can be arbitrarily determined. For example, the adjustment may be performed automatically based on the measurement result (in-plane thickness distribution of the wafer W) of the thickness measurement mechanism 110, or may be performed manually by an operator based on the measurement result.
In the above example, the supply position of the adjustment water from the outer nozzle 120 is controlled by the operation of the supply position adjustment mechanism 122, but the control method of adjusting the supply position of the water is not limited thereto. For example, as shown in fig. 8, a plurality of, in the illustrated example, three outer nozzles 120a, 120b, 120c may be provided, which are capable of independently supplying the adjustment water to different positions of the wafer W. In this case, an arbitrary outer nozzle 120 is selected according to the supply position of the adjustment water, and the adjustment water is supplied from the selected outer nozzle 120 to an arbitrary position of the wafer W by the control of the switching valve 124. In this case, the plurality of outer nozzles 120 corresponds to "the adjustment water supply nozzle" according to the technology of the present disclosure. The outer nozzles 120a, 120b, and 120c are preferably configured to be capable of setting the supply amounts of the adjustment water to the grinding surfaces of the wafers W by the flow rate adjustment mechanism 123, respectively.
In the same manner, a plurality of inner nozzles 130 for independently supplying the adjustment water to different positions of the wafer W may be provided.
The outer nozzle 120 and/or the inner nozzle 130 as the adjustment water supply means may be provided at the machining position A1 (the rough grinding section 80) and the machining position A2 (the middle grinding section 90) in addition to the machining position A3 (the finish grinding section 100).
The above processing apparatus 1 is provided with a control unit 140. The control unit 140 is a computer including a CPU, a memory, and the like, and includes a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the processing apparatus 1. The program storage unit stores a program for controlling grinding operations described later. The program may be recorded on a computer-readable storage medium H, and installed from the storage medium H to the control unit 140. The storage medium H may be a transitory storage medium or a non-transitory storage medium.
The processing apparatus 1 according to the present embodiment is configured as described above.
Here, it was found that: when only the flange grinding water is supplied to the grinding surface of the wafer W at the time of grinding the wafer W, as described above, the TTV of the wafer W after the grinding process may be deteriorated because the removal of the frictional heat generated by the grinding is not properly performed. Specifically, as shown in fig. 6, in order to supply flange grinding water from a grinding water supply source so as to simultaneously clean the lower surface of the attachment and the grinding wheel, the flange grinding water is supplied to the grinding surface of the wafer W through a dispersion chamber so as to be dispersed in the circumferential direction. Accordingly, the amount of the supplied flange grinding water to the grinding surface is reduced relative to the total amount of the flange grinding water supplied from the grinding water supply source, so that, in particular, the thickness of the center portion of the wafer W after the grinding process is reduced compared with the thickness of the outer peripheral portion (the grinding amount at the center portion is increased). This is thought to be caused by: when the center portion of the wafer W is easily expanded due to the concentration of the frictional heat, and the wafer W is ground by supplying only the flange grinding water as described above, the cooling amount at the center portion of the wafer W becomes insufficient, and expansion of the wafer W cannot be properly suppressed.
In addition, as described above, particularly, the center portion of the wafer W tends to be easily reduced in thickness due to the influence of the frictional heat concentration or the like (hereinafter, a region in which the thickness in the plane of the wafer W is reduced is referred to as a "singular point"), but, for example, depending on the grinding conditions, a singular point may be generated in other portions in the plane of the wafer W.
Accordingly, the inventors of the present invention have conducted intensive studies to find the following: in grinding the wafer W, the TTV of the wafer W after the grinding process can be improved by supplying the adjustment water from the adjustment water supply mechanism to the predicted generation position of the singular point. Namely, the following scheme is found: for example, before the processing (actual processing) of the wafer W, the TTV of the wafer W can be improved by predicting the generation position of the singular point from the grinding result and the TTV of the preceding wafer (for example, a wafer dummy wafer, another wafer W processed by the processing device 1, or the like) in the processing device 1 and performing the actual processing of the wafer W based on the grinding result.
Specifically, the inventors of the present invention performed grinding processing of the wafer W by supplying the conditioning water from the outer nozzle 120 as the conditioning water supply means in the finish grinding section 100 of the processing apparatus 1, and obtained the grinding processing result of the wafer W (the measurement result of the thickness of the wafer W). Specifically, rough grinding and intermediate grinding of the wafer W are sequentially performed while supplying flange grinding water, finish grinding is performed while supplying flange grinding water and adjusting water, and the in-plane thickness distribution of the finished shape of the wafer W after the finish grinding process is measured by the thickness measuring means 110. In the following description, the case where the outer nozzle 120 is used as the adjustment water supply means is described as an example, but the inner nozzle 130 may be used as the adjustment water supply means.
Fig. 9 is a graph showing the grinding result (thickness measurement result: thickness distribution) of the wafer W subjected to the finish grinding treatment with the flange grinding water and the adjustment water from the outer nozzle 120. In fig. 9, experiment example 1 shows a grinding result in the case where the adjustment water from the outer nozzle 120 is supplied to the center portion of the wafer W, experiment example 2 shows a grinding result in the case where the adjustment water from the outer nozzle 120 is supplied to the outer peripheral portion of the wafer W, and comparative example shows a grinding result in the case where the adjustment water from the outer nozzle 120 is not supplied. In addition, when the grinding treatment results shown in fig. 9 were obtained, the supply amount of the flange grinding water was made the same in any of the cases of the experimental examples 1, 2 and the comparative example.
Referring to fig. 9, it can be seen that: the wafer W is subjected to finish grinding while supplying adjusting water to a central portion (a position where a singular point is generated) of the wafer W, thereby making the in-plane thickness of the wafer W uniform after the finish grinding, and improving TTV. The reason for this is considered to be: by promoting cooling of the center portion where frictional heat generated by grinding of the wafer W is easily concentrated as described above, the temperature influence that causes deterioration of TTV can be alleviated.
Next, fig. 10 is a graph showing the grinding result (thickness distribution) of the wafer W after the finish grinding process, in the case where the supply amount of the adjustment water to the central portion of the wafer W is changed. In addition, when the grinding processing result shown in fig. 10 is obtained, the supply amount of the flange grinding water is also set to be constant.
Referring to fig. 10, it can be seen that: the measurement result of the thickness of the wafer W after finish grinding varies greatly depending on the supply amount of the adjustment water to the grinding surface (on the holding disk 42) of the wafer W. Specifically, it can be seen that: by increasing the supply amount of the adjustment water to the central portion of the wafer W, the grinding amount at the central portion of the wafer W can be reduced, and the TTV can be improved. As shown in fig. 10, it can be seen that: by further increasing the supply amount of the adjustment water to the central portion of the wafer W, the finished shape of the central portion of the wafer W becomes a convex shape. In other words, it is possible to find a possibility that the finished shape of the wafer W after the grinding process can be arbitrarily controlled by controlling the supply amount of the adjustment water to the wafer W.
In the present embodiment, although the case where the adjustment water is supplied to the center portion of the wafer W where the singular point is generated was exemplified, the possibility was found that the shape of the wafer W after the grinding process can be arbitrarily controlled by selectively controlling the supply position and the supply amount of the adjustment water within the surface of the wafer W.
Therefore, a method of grinding the wafer W in the processing apparatus 1 based on the above findings will be described. Specifically, in the present embodiment, TTV of the wafer after the grinding process is measured in advance, and the adjustment water is supplied to the generation position of the singular point (the position where the thickness is to be increased) based on the measurement result obtained.
In the processing apparatus 1 according to the present embodiment, first, when the conditions of the processing process of the wafer W are set at the time of installation of the processing apparatus 1, it is confirmed which tendency occurs in the finished shape of the wafer W after various grinding processes performed by the processing apparatus 1. The inclination of the finished shape is confirmed by, for example, actually grinding a wafer dummy or the like in the processing apparatus 1.
Specifically, for example, the cassette C containing the wafer dummy wafer is placed on the cassette stage 10 of the carry-in/out station 2. Next, the wafer dummy is taken out from the cassette C by the transfer fork 23 of the wafer transfer device 22, and transferred to the alignment section 50 of the processing station 3. In the alignment portion 50, the orientation of the wafer dummy in the horizontal direction is adjusted by adjusting the position of a notch (not shown) formed in the wafer dummy.
Next, the wafer dummy, which is oriented in the horizontal direction, is conveyed from the aligning section 50 by the conveying section 30, and is transferred to the holding tray 42 at the transfer position A0. Then, the turntable 41 is rotated to sequentially move the wafer dummy held on the holding tray 42 to the processing positions A1 to A3.
At the processing position A1, the rough grinding section 80 rough grinds the ground surface of the wafer dummy wafer. At the processing position A2, the grinding surface of the wafer dummy is subjected to intermediate grinding by the intermediate grinding section 90. Then, at the processing position A3, the finish grinding unit 100 performs finish grinding on the ground surface of the wafer dummy. The various grinding processes (rough grinding, intermediate grinding, and finish grinding) of the wafer dummy are performed while supplying flange grinding water to the grinding surface (and the inner peripheral surface of the grinding wheel) of the wafer dummy.
When the finish grinding process of the wafer dummy is completed, the thickness of the wafer dummy including a plurality of points near the center portion and the peripheral portion is measured by the thickness measuring mechanism 110 while rotating the wafer dummy, whereby the thickness distribution and the flatness (TTV) of the wafer dummy are calculated.
The calculated thickness distribution and TTV are output to the control section 140, for example. Then, a position (singular point) where the thickness in the surface of the wafer dummy becomes thin is detected based on the measurement result of the thickness measurement mechanism 110. The detected singular point is output to the control unit 140, for example, and is used for feedback control of actual processing of the wafer W as will be described later.
When the thickness distribution and TTV of the wafer dummy are acquired, the turntable 41 is then rotated, and the holding tray 42 holding the wafer dummy is moved to the delivery position A0. Thereafter, the wafer dummy is conveyed from the delivery position A0 to the cassette C of the cassette mounting stage 10 via the second cleaning section 70 and the first cleaning section 60, whereby the tendency confirmation operation of the completion shape performed before the actual processing of the wafer W is completed.
When the tendency of the finished shape using the wafer dummy is confirmed in this way, the actual processing of the wafer W in the processing apparatus 1 is started.
First, a cassette C containing a plurality of wafers W is placed on the cassette stage 10 of the carry-in/out station 2. Next, the wafer W is taken out from the cassette C by the transfer fork 23 of the wafer transfer device 22, and after the alignment portion 50 has been adjusted in the horizontal direction, the wafer W is transferred to the holding tray 42 at the transfer position A0 by the transfer portion 30. When the wafer W is transferred to the holding tray 42, the turntable 41 is rotated, and the wafer W held on the holding tray 42 is sequentially moved to the processing positions A1 to A3.
At the processing position A1, the rough grinding section 80 rough grinds the ground surface of the wafer W. At the processing position A2, the grinding surface of the wafer W is subjected to intermediate grinding by the intermediate grinding section 90. At the processing position A3, the finish grinding unit 100 performs finish grinding on the ground surface of the wafer W.
Here, the rough grinding at the processing position A1 and the intermediate grinding at the processing position A2 are performed while supplying flange grinding water to the grinding surface (and the inner peripheral surface of the grinding wheel) of the wafer W, similarly to the grinding process for the wafer dummy. On the other hand, when the finish grinding treatment is performed at the machining position A3, in addition to the supply of the flange grinding water, the supply of the adjustment water is performed to the radial position corresponding to the singular point detected by the grinding of the wafer dummy.
As described above, it is considered that the portion (singular point) where the thickness of the wafer W is small after the finish grinding treatment is caused because the cooling capability of the wafer W (the holding disk 42) is insufficient only by the flange grinding water supplied to the entire circumference of the finish grinding wheel 101, and the wafer W (the holding disk 42) expands. In the present embodiment, in addition to the supply of the flange grinding water, the adjustment water is supplied from the outer nozzle 120 to the predicted generation position of the singular point in this way, whereby the expansion of the wafer W (the holding disk 42) is suppressed, and the generation of the portion (the singular point) of the wafer W having a small thickness after the finish grinding process can be suppressed. That is, the TTV of the wafer W after finish grinding can be improved.
The heat that causes the expansion of the wafer W (the holding tray 42) in the processing apparatus 1 is mainly frictional heat generated during the processing of the wafer W. In general, the amount of frictional heat generated during processing is determined according to the process conditions of the grinding process performed on the wafer W. In other words, even in the case of performing the grinding process on a plurality of different wafers W, if the grinding process is performed under the same process conditions, the generated frictional heat is considered to be substantially constant. Accordingly, without determining the supply position and supply amount of the adjustment water for each wafer W to be subjected to the grinding process, the TTV related to the actual processing of the wafer W can be appropriately improved by confirming the tendency of the completion shape at the time of the installation of the processing apparatus 1 and the time of the condition setting of the processing process of the wafer W as described above.
The position of the supply of the adjustment water from the outer nozzle 120 is preferably set at a position immediately downstream of the processing point R in the rotation direction of the wafer W (the holding disk 42). In other words, it is preferable to set the supply position of the adjustment water so that frictional heat generated during processing can be removed immediately after the frictional heat is generated (immediately after the frictional heat increases the temperature of the wafer W).
The adjustment water from the outer nozzle 120 and/or the inner nozzle 130 may be supplied at all times during the finish grinding process for the wafer W, or may be supplied from the middle of the finish grinding process. That is, the completion shape of the wafer W may be appropriately adjusted by removing frictional heat generated during the finish grinding process, and the timing of starting the supply of the adjustment water to the wafer W, the supply time, and the like may be arbitrarily changed. By changing the supply start timing and the supply time of the adjustment water in this way, the supply amount of the adjustment water to the wafer W can be reduced, and the amount of the adjustment water used in the finish grinding process can be reduced.
When the finish grinding process of the wafer W is completed, the thickness of the wafer W including a plurality of points near the center portion and the peripheral portion is measured by the thickness measuring mechanism 110 while the wafer W is rotated, whereby the thickness distribution and the flatness (TTV) of the wafer W are calculated. The calculated thickness distribution and TTV are output to the control section 140, for example.
Then, the turntable 41 is rotated to move the holding disk 42 to the delivery position A0. Next, the wafer W is transferred from the transfer position A0 to the second cleaning unit 70 by the transfer unit 30, and the wafer W is cleaned and dried while being held by the transfer pad 32.
Next, the wafer W is transferred from the second cleaning unit 70 to the first cleaning unit 60 by the transfer unit 30, and is cleaned by a cleaning liquid nozzle (not shown).
Thereafter, the wafer W subjected to all the processes is transported to the cassette C of the cassette mounting stage 10 by the transport fork 23 of the wafer transport device 22. In this way, the series of processing operations in the processing apparatus 1 is completed.
In the above grinding operation, the thickness distribution and TTV of the wafer dummy after finish grinding are measured, and the supply of the adjustment water during the actual processing of the wafer W is controlled based on the measurement result. However, for example, when the calculated TTV value converges on a predetermined threshold value, it may be determined that no singular point is generated in the wafer W after the finish grinding process, and it may be determined that it is not necessary to adjust the supply of water. That is, when the calculated TTV value deviates from the threshold value, the singular point may be calculated, and the supply position and the supply amount of the regulated water may be adjusted.
Further, after the grinding process accompanied by the supply of the adjustment water, if the calculated TTV value converges to the predetermined threshold value, it is determined that the supply position and the supply amount of the adjustment water are appropriate, and thereafter, the process may be controlled to be performed under the conditions (for example, the supply position and the supply amount).
According to the above embodiment, at the time of grinding processing of the wafer W in the processing apparatus 1, the adjustment water is supplied to the predicted generation position of the singular point in the grinding surface of the wafer W based on the tendency of the finish shape obtained in advance by the grinding processing of the wafer dummy. As a result, thermal expansion of the wafer W (holding disk 42) at the position where the adjustment water is supplied is suppressed, and as a result, deterioration of TTV of the wafer W due to the thermal expansion is appropriately suppressed.
In addition, according to the present embodiment, the adjustment water from the outer nozzle 120 (the inner nozzle 130) can be supplied to an arbitrary position in the grinding surface of the wafer W. Thus, no matter where the singular point occurs in the surface of the wafer W, the adjustment water can be supplied to the position where the singular point occurs, that is, the TTV of the wafer W can be appropriately improved.
Further, according to the present embodiment, the flow rate of the regulated water supplied to the surface of the wafer W can be appropriately changed. Thus, the cooling amount of the wafer W can be arbitrarily set to determine the grinding amount, and the finished shape of the wafer W can be appropriately controlled.
In the grinding process of the wafer W according to the present embodiment, the flange grinding water is supplied through the flow paths formed in the various grinding mechanisms. Therefore, the chips and the like generated during the grinding process can be appropriately discharged. In addition, the interior of the grinding wheel and the mounting can be maintained in a clean state.
Further, since the flange grinding water from the grinding water supply source is supplied to the grinding surface of the wafer W so as to be dispersed in the circumferential direction through the dispersion chamber as described above, the supply amount of the flange grinding water to the grinding surface is reduced with respect to the total amount of the flange grinding water supplied from the grinding water supply source. Therefore, if it is intended to remove frictional heat generated at the grinding of the wafer W using only the flange grinding water, the supply amount of the flange grinding water becomes huge. In this regard, in the present embodiment, since the adjustment water from the adjustment water supply means is supplied to the predicted generation position of the singular point in addition to the flange grinding water, it is not necessary to increase the supply amount of the flange grinding water. That is, the wafer W can be processed into a desired shape by appropriately removing frictional heat while appropriately cleaning the grinding wheel and the attachment without using a large amount of flange grinding water.
As described above, the technique according to the present disclosure is particularly suitable for use in cases where the amount of grinding water to be supplied to the grinding surface of the wafer W cannot be sufficiently ensured during the grinding process of the wafer W (for example, the type of processing apparatus for supplying flange grinding water according to the present embodiment). However, the present description does not prevent the technology according to the present disclosure from being applied to a processing apparatus that does not use flange grinding water in the grinding process of the wafer W, specifically, a processing apparatus that uses supply water from the inner nozzle 130 as grinding water instead of flange grinding water as described later.
In the above embodiment, the thickness distribution and TTV of the wafer dummy after the finish grinding process are measured, and the grinding process using the conditioning water is performed in the finish grinding unit 100 based on the measurement result. However, the grinding treatment using the regulated water is not limited to the finish grinding section 100. That is, as described above, the outer nozzle 120 and the inner nozzle 130 as the adjustment water supply means may be provided in the rough grinding section 80 and the intermediate grinding section 90, and the rough grinding process and the intermediate grinding process may be performed using the adjustment water. In this way, in particular, when the cause of the occurrence of the singular point is clear, the rough grinding section 80 and the intermediate grinding section 90 can appropriately process the wafer W into a desired shape.
Specifically, for example, the thickness distribution and TTV of the wafer W after rough grinding and after intermediate grinding are obtained at the time of grinding of the wafer dummy wafer. The thickness data may be acquired by, for example, the thickness measuring means 110 provided at the processing positions A1 and A2, respectively, or may be sequentially acquired by, for example, the thickness measuring means 110 provided at the processing position A3. In addition, during the actual processing of the wafer W, the grinding process may be performed by supplying the adjustment water from the adjustment water supply means based on the acquired thickness data of the wafer W after the rough grinding process and after the intermediate grinding process.
In the above embodiment, the case where the adjustment water at the time of the grinding process is supplied from the outer nozzle 120 was described as an example, but of course, the adjustment water may be supplied from the inner nozzle 130. Even in the case where the adjustment water is supplied from the inner nozzle 130 as described above, the TTV of the wafer W after the finish grinding process can be appropriately improved as in the case where the adjustment water is supplied from the outer nozzle 120.
In addition, for example, by simultaneously supplying the adjustment water from the outer nozzle 120 and the inner nozzle 130 to different positions in the radial direction of the wafer W, even when, for example, a plurality of singular points are generated on the polished surface of the wafer W, the shape of the wafer W can be appropriately controlled. Specifically, even when the shape of the wafer W after finish grinding has a tendency of W component (a singular point occurs at 2 different points in the radial direction), for example, the shape of the wafer W can be appropriately controlled.
For example, in the above embodiment, the case where the grinding process of the wafer W is performed using the flange grinding water from the grinding water supply source 87 has been described as an example, but as described above, the adjustment water from the inner nozzle 130 may be used as the grinding water instead of the flange grinding water. Specifically, instead of the flange grinding water, grinding water may be supplied from the inner nozzle 130 to the vicinity of the center portion of the processing surface of the wafer W, and when a singular point is generated in the surface of the wafer W after finish grinding, adjusting water may be supplied from the outer nozzle 120 to the position where the singular point is generated. In this case, the inner nozzle 130 corresponds to the "grinding water supply mechanism" and the "grinding water supply nozzle" related to the technology of the present disclosure.
In addition, even when the inner nozzle 130 is used as the grinding water supply means in this way, the adjusting water may be supplied from the outer nozzle 120 to the radial outside of the refiner 101a, and also to the radial inside of the refiner 101 a. That is, for example, an inner nozzle (not shown) for adjusting water may be provided below the finish grinding wheel 101.
Further, according to the above embodiment, the case where grinding of the wafer dummy is performed at the time of confirming the tendency of completing the shape in the processing apparatus 1 has been described as an example, but the grinding processing result (TTV data) of the other wafer W processed before the one wafer W to be improved in TTV may be fed back to the grinding processing of the one wafer W. The feedback control of the grinding processing results associated with the other wafers W may be performed for each lot of wafers W carried into the processing apparatus 1, for example, or may be performed for each processed Shan Zhangjing wafers W.
In the above embodiment, the actual processing of the wafer W is started after confirming the tendency of the finish shape after the finish grinding processing by the wafer dummy, but more preferably, the actual processing of the wafer W is started after confirming that the acquired TTV value has converged to the predetermined threshold value.
It should be understood that all aspects of the presently disclosed embodiments are illustrative and not limiting. The above-described embodiments may be omitted, substituted or altered in various ways without departing from the scope of the appended claims and their gist.
Description of the reference numerals
1: a processing device; 42: a holding plate; 100: a finish grinding section; 101a; fine grinding tool; 107: a grinding water supply source; 120: an outer nozzle; 130: an inner nozzle; w: and (3) a wafer.

Claims (18)

1. A processing apparatus that processes a substrate, the processing apparatus comprising:
a grinding mechanism provided with an annular grinding tool for processing the substrate held by the holding mechanism;
a grinding water supply mechanism for supplying grinding water to the processing surface of the substrate; and
and an adjustment water supply mechanism for supplying adjustment water for cooling an arbitrary position on the processing surface of the substrate.
2. The processing apparatus according to claim 1, wherein,
the grinding mechanism comprises:
a flange supporting the grinder; and
a mounting member supporting the flange,
the grinding water supply mechanism supplies grinding water to a machining surface via the mounting member, the flange, and the grinding tool.
3. The processing apparatus according to claim 1, wherein,
the grinding mechanism comprises a grinding wheel provided with the grinding tool,
the grinding water supply mechanism supplies grinding water from a grinding water supply nozzle provided below the grinding wheel.
4. A processing apparatus according to any one of claim 1 to 3, wherein,
the adjustment water supply mechanism includes a supply position adjustment mechanism that adjusts a supply position of the adjustment water with respect to the processing surface of the substrate.
5. A processing apparatus according to any one of claim 1 to 3, wherein,
the adjusting water supply mechanism is provided with a plurality of adjusting water supply nozzles for independently supplying the adjusting water to different positions of the processing surface of the substrate.
6. The processing apparatus according to claim 4 or 5, wherein,
Further comprising a thickness measuring means for measuring an in-plane thickness distribution of the substrate after the grinding treatment by the grinding means,
the adjusting water supply mechanism adjusts the supply position of the adjusting water according to the measurement result of the thickness measurement mechanism.
7. The processing apparatus according to any one of claims 1 to 6, wherein,
the adjustment water supply mechanism is provided with a flow rate adjustment mechanism that adjusts the supply amount of adjustment water to the processing surface of the substrate.
8. The processing apparatus according to claim 7, wherein,
further comprising a thickness measuring means for measuring an in-plane thickness distribution of the substrate after the grinding treatment by the grinding means,
the flow rate adjusting means automatically adjusts the supply amount of the adjustment water based on the measurement result of the thickness measuring means.
9. The processing apparatus according to any one of claims 1 to 8, wherein,
the adjustment water supply means supplies the adjustment water to the radially outer side of the annular grinding tool on the processing surface of the substrate.
10. The processing apparatus according to any one of claims 1 to 9, wherein,
The adjustment water supply means supplies the adjustment water to the radially inner side of the annular grinding tool on the processing surface of the substrate.
11. The processing apparatus according to any one of claims 1 to 10, wherein,
the position at which the adjustment water is supplied by the adjustment water supply means is a position on the processing surface of the substrate at which the thickness of the substrate becomes relatively small after processing by the grinding means.
12. A processing method, which is a processing method of a substrate, the processing method comprising:
machining one substrate while supplying grinding water;
measuring an in-plane thickness distribution of the one substrate after processing; and
processing the other substrate based on the measurement result of the in-plane thickness distribution of the one substrate,
and a control water supply unit configured to supply control water from the control water supply unit to a position of the other substrate corresponding to a position of the other substrate where the thickness of the one substrate after the processing is relatively reduced, in addition to the grinding water.
13. The method of claim 12, wherein the processing step comprises,
and adjusting the supply position of the adjustment water to the other substrate based on the measurement result of the in-plane thickness distribution of the one substrate.
14. The method according to claim 12 or 13, wherein,
and adjusting the supply amount of the adjustment water to the other substrate based on the measurement result of the in-plane thickness distribution of the one substrate.
15. The method according to any one of claims 12 to 14, wherein,
the processing of the substrate is performed by bringing an annular grinding tool into contact with the processing surface of the substrate,
the conditioning water is supplied to the radially outer side of the annular grinding tool on the processing surface of the other substrate.
16. The method according to any one of claims 12 to 15, wherein,
the processing of the substrate is performed by bringing an annular grinding tool into contact with the processing surface of the substrate,
the conditioning water is supplied to the radially inner side of the annular grinding tool on the processing surface of the other substrate.
17. The method according to any one of claims 12 to 16, wherein,
the adjustment water is always supplied when the other substrate is processed.
18. The method according to any one of claims 12 to 16, wherein,
the supply of the adjustment water is started from the middle of the processing of the other substrate.
CN202180054884.7A 2020-09-14 2021-08-31 Processing device and processing method Pending CN116075394A (en)

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JPH05309566A (en) * 1992-04-21 1993-11-22 Sony Corp Grinding solution feeding structure
KR100303396B1 (en) * 1998-05-26 2001-11-30 윤종용 Wafer grinding apparatus for manufacturing semiconductor device
JP2004200526A (en) * 2002-12-20 2004-07-15 Hitachi Cable Ltd Device for grinding semiconductor wafer, and grinding method
JP5890768B2 (en) 2012-11-19 2016-03-22 株式会社東京精密 Semiconductor wafer processing equipment
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JP6751301B2 (en) * 2016-03-14 2020-09-02 株式会社ディスコ Grinding machine
JP7049936B2 (en) * 2018-06-14 2022-04-07 東京エレクトロン株式会社 Adjustment method of processing equipment and processing equipment
JP7417400B2 (en) * 2018-12-07 2024-01-18 株式会社ディスコ Processing method for disc-shaped workpieces
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