WO2019208337A1

WO2019208337A1 - Substrate processing system and substrate processing method

Info

Publication number: WO2019208337A1
Application number: PCT/JP2019/016369
Authority: WO
Inventors: 義広川口; 弘明森; 和哉久野
Original assignee: 東京エレクトロン株式会社
Priority date: 2018-04-27
Filing date: 2019-04-16
Publication date: 2019-10-31

Abstract

Provided is a substrate processing system provided with: a carrying in and out station through which a cassette that stores a substrate to be processed is carried in and out; a laser processing device which performs a laser process on the substrate to be processed; and a thinning device which makes the substrate to be processed thin, wherein the thinning device and the carrying in and out station are arranged at opposite sides with the laser processing device therebetween in a horizontal direction.

Description

Substrate processing system and substrate processing method

The present disclosure relates to a substrate processing system and a substrate processing method.

The wafer processing system of Patent Document 1 includes a laser processing apparatus that forms a modified layer inside a wafer, a grinding apparatus that thins the wafer, a first cassette mounting unit that mounts a first cassette, And a second cassette placement section for placing the second cassette. The wafer processing system includes a transfer unit that transfers a wafer between a laser processing apparatus, a grinding apparatus, a first cassette, and a second cassette.

Japanese Unexamined Patent Publication No. 2017-220579

One aspect of the present disclosure provides a technique capable of keeping a processed substrate after processing in a loading / unloading station where a cassette for storing the substrate to be processed is loaded / unloaded.

A substrate processing system according to an aspect of the present disclosure includes:
A loading / unloading station for loading / unloading a cassette storing a substrate to be processed;
A laser processing apparatus for performing laser processing on the substrate to be processed;
A thinning device for thinning the substrate to be processed,
The thinning device and the carry-in / out station are disposed on opposite sides of the laser processing device in the horizontal direction.

According to one aspect of the present disclosure, a processed substrate can be kept clean at a loading / unloading station where a cassette for storing the substrate to be processed is loaded / unloaded.

FIG. 1 is a plan view showing a substrate processing system according to the first embodiment. FIG. 2 is a diagram showing the substrate processing system according to the first embodiment, and is a cross-sectional view taken along the line II-II in FIG. FIG. 3 is a perspective view showing the substrate to be processed before being processed by the substrate processing system according to the first embodiment. FIG. 4 is a perspective view showing the substrate to be processed after being processed by the substrate processing system according to the first embodiment. FIG. 5 is a diagram illustrating a main part of the laser processing apparatus according to the first embodiment. FIG. 6 is a view showing a primary processing unit of the thinning device according to the first embodiment. FIG. 7 is a flowchart showing steps of the substrate processing method according to the first embodiment, and is a flowchart in the case where the processing target substrate is thinned after laser processing of the processing target substrate. FIG. 8 is a flowchart showing an example of a process performed after the process S114 of FIG. FIG. 9 is a flowchart showing steps of the substrate processing method according to the first embodiment, and is a flowchart in the case where laser processing is performed on the substrate to be processed after the substrate to be processed is thinned. FIG. 10 is a plan view showing a substrate processing system according to the second embodiment. FIG. 11 is a view showing the substrate processing system according to the second embodiment, and is a cross-sectional view taken along the line XI-XI of FIG. FIG. 12 is a diagram illustrating a coating apparatus according to the second embodiment. FIG. 13: is sectional drawing which shows the state before and behind supplying compressed air to the inside of the pressure vessel of the joining apparatus which concerns on 2nd Embodiment. FIG. 14 is a cross-sectional view illustrating an example of a state in which the sealed space of the bonding apparatus indicated by the solid line in FIG. 13 is decompressed. FIG. 15 is a flowchart showing the substrate processing method according to the second embodiment. FIG. 16 is a flowchart illustrating an example of a process performed subsequent to the process S309 in FIG. 15 when the process target substrate is thinned after the laser processing of the process target substrate. FIG. 17 is a flowchart illustrating an example of a process performed subsequent to step S309 in FIG. 15 when laser processing of the target substrate is performed after the target substrate is thinned.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and description thereof may be omitted.

[First Embodiment]
FIG. 1 is a plan view showing a substrate processing system according to the first embodiment. FIG. 2 is a diagram showing the substrate processing system according to the first embodiment, and is a cross-sectional view taken along the line II-II in FIG. 1 and 2, the X axis direction, the Y axis direction, and the Z axis direction are directions perpendicular to each other, the X axis direction and the Y axis direction are horizontal directions, and the Z axis direction is a vertical direction. The rotation direction with the vertical axis as the center of rotation is also called the θ direction. In this specification, “lower” means vertically downward, and “upper” means vertically upward.

The substrate processing system 1 performs laser processing of the substrate 10 to be processed. In addition, the substrate processing system 1 thins the substrate 10 to be processed. Either laser processing of the substrate to be processed 10 or thinning of the substrate to be processed 10 may be performed first. Regardless of which is performed first, the substrate processing system 1 is configured to be able to cope.

The substrate processing system 1 performs various processes after the laser processing of the substrate 10 to be processed and the thinning of the substrate 10 to be processed. Specifically, the substrate processing system 1 irradiates the protective tape 40 (see FIG. 3) with ultraviolet rays, mounts the substrate 10 to be processed, peels off the protective tape 40 from the substrate 10 to be processed, and the frame 60 (see FIG. 4). Affix ID to.

The substrate processing system 1 includes a loading / unloading station 100 in which a plurality of

cassettes

101 and 102 that accommodate a substrate to be processed 10 are loaded / unloaded. The loading / unloading station 100 carries in / out a cassette 101 for storing the substrate to be processed 10 before processing and a cassette 102 for storing the substrate to be processed 10 after processing.

The loading / unloading station 100 includes a cassette table 110 on which a plurality of

cassettes

101 and 102 that accommodate the substrate to be processed 10 are placed. The cassette stand 110 includes a plurality of (for example, four) placement plates 112. The plurality of placement plates 112 are arranged at intervals in the Y-axis direction. One of the plurality of

cassettes

101 and 102 is placed on each of the plurality of placement plates 112.

FIG. 3 is a perspective view showing a substrate to be processed before being processed by the substrate processing system according to the first embodiment. The substrate to be processed 10 is a semiconductor substrate such as a silicon wafer. The substrate 10 has a first main surface 11 and a second main surface 12 that face each other.

The first main surface 11 of the substrate to be processed 10 is partitioned by a plurality of streets formed in a lattice shape. Devices such as elements, circuits, and terminals are formed in advance in each partitioned area. A division line is set for each of the plurality of streets. The substrate 10 to be processed is divided along the division lines, and a plurality of chips 19 (see FIG. 4) are obtained.

A protective tape 40 is bonded to the first main surface 11 of the substrate 10 to be processed. The protective tape 40 protects the first main surface 11 of the substrate 10 to be processed and protects a device formed in advance on the first main surface 11 during laser processing and thinning. The protective tape 40 covers the entire first main surface 11 of the substrate 10 to be processed.

The protective tape 40 is composed of a sheet base material and an adhesive applied to the surface of the sheet base material. The pressure-sensitive adhesive may be cured by irradiating with ultraviolet rays to reduce the adhesive strength. After the adhesive force is reduced, the protective tape 40 can be easily peeled from the substrate to be processed 10 by a peeling operation.

The substrate 10 to be processed is accommodated in the cassette 101 with the first main surface 11 to which the protective tape 40 is bonded facing upward. Further, the substrate 10 to be processed is taken out from the cassette 101, turned upside down, and then transferred to the first processing station 200.

FIG. 4 is a perspective view showing the substrate to be processed after being processed by the substrate processing system according to the first embodiment. The substrate 10 to be processed is attached to the frame 60 via an adhesive tape 50 after laser processing and thinning. The adhesive tape 50 is provided on the opposite side of the protective tape 40 shown in FIG. The protective tape 40 is peeled off from the substrate 10 to be processed by the substrate processing system 1 and removed.

The adhesive tape 50 is composed of a sheet base material and an adhesive applied to the surface of the sheet base material. The adhesive tape 50 is attached to the frame 60 so as to cover the opening of the annular frame 60, and is bonded to the substrate to be processed 10 at the opening of the frame 60. Thereby, the to-be-processed substrate 10 can be conveyed holding the flame | frame 60, and the handleability of the to-be-processed substrate 10 can be improved.

Between the adhesive tape 50 and the to-be-processed substrate 10, DAF (Die | Attach | Film) 52 may be provided as shown in FIG. The DAF 52 is an adhesive sheet for die bonding. The DAF 52 is used for stacking the chips 19 and the like. The DAF 52 may be either conductive or insulating.

The DAF 52 is formed smaller than the opening of the frame 60 and is provided inside the frame 60. The DAF 52 covers the entire second main surface 12 of the substrate 10 to be processed. If the chips 19 are not stacked, the DAF 52 is not necessary, and the substrate to be processed 10 may be attached to the frame 60 via the adhesive tape 50 alone.

As shown in FIGS. 1 and 2, the carry-in / out station 100 has a transfer area 120 to which the substrate 10 to be processed is transferred. The conveyance area 120 is disposed on the X axis direction positive side of the cassette table 110. A guide rail 121 extending in the Y-axis direction is installed in the transport region 120, and the transport device 122 moves along the guide rail 121.

The transfer device 122 includes a first holder 123, a second holder 124, and a third holder 125 as a holding unit that holds the substrate 10 to be processed. The first holder 123, the second holder 124, and the third holder 125 are arranged to be shifted in the Y-axis direction in FIG. 1, but are spaced in the Z-axis direction as shown in FIG. Since they are arranged, they may be arranged so as to overlap in the Y-axis direction.

The first holder 123, the second holder 124, and the third holder 125 are movable not only in the Y axis direction but also in the X axis direction, the Z axis direction, and the θ direction. The first holder 123, the second holder 124, and the third holder 125 move synchronously in the Y-axis direction and move independently in the X-axis direction, the Z-axis direction, and the θ direction.

The first holder 123 receives the substrate to be processed 10 from the cassette 101 placed on the cassette stand 110 and takes out the received substrate 10 to be processed from the cassette 101. The first holder 123 is formed in a fork shape which is divided into two forks so as to be easily inserted into the cassette 101. The first holder 123 can be turned upside down to turn the substrate 10 to be turned upside down.

The second holder 124 conveys the substrate 10 to be processed on which at least one of laser processing and thinning is performed. The second holder 124 has a circular suction surface having a diameter larger than the diameter of the substrate to be processed 10 in order to prevent damage to the substrate 10 to be processed that has become brittle due to processing. To adsorb.

The third holder 125 conveys the substrate 10 to be processed mounted on the frame 60 via the adhesive tape 50. The third holder 125 includes a pair of guide rails 126 on which the frame 60 is movably mounted and a grip portion 127 that grips the frame 60 mounted on the pair of guide rails 126.

The substrate processing system 1 includes a first processing station 200 that processes the substrate to be processed 10 taken out from the cassette 101. The first processing station 200 includes a laser processing device 210 that performs laser processing of the substrate 10 to be processed, and a thinning device 220 that performs thinning of the substrate 10 to be processed.

FIG. 5 is a diagram showing a main part of the laser processing apparatus according to the first embodiment. The laser processing apparatus 210 performs laser processing on the substrate 10 to be processed. For example, the laser processing apparatus 210 performs laser processing (so-called laser dicing) for dividing the substrate 10 to be processed into a plurality of chips 19. The laser processing apparatus 210 condenses and irradiates the laser processing stage 211 that holds the target substrate 10 and the laser beam LB that processes the target substrate 10 onto the target substrate 10 that is held by the laser processing stage 211. A head 212.

The laser processing stage 211 holds the substrate 10 to be processed from below via the protective tape 40. That is, the laser processing stage 211 holds the target substrate 10 from below with the second main surface 12 of the target substrate 10 facing upward. The laser processing stage 211 has a circular suction surface having a diameter larger than the diameter of the substrate to be processed 10, and sucks the substrate to be processed 10 on the suction surface. The laser processing stage 211 is a vacuum chuck that vacuum-sucks the substrate 10 to be processed, but may be an electrostatic chuck that electrostatically chucks the substrate 10 to be processed.

The laser processing head 212 has a condenser lens 213 arranged vertically above the laser processing stage 211. The condensing lens 213 condenses the laser beam LB inside the substrate 10 to be processed, and forms the modified layer 15 serving as a starting point of the division inside the substrate 10 to be processed. When the modified layer 15 is formed inside the substrate 10 to be processed, a laser beam having transparency to the substrate 10 to be processed is used. The modified layer 15 is formed, for example, by locally melting and solidifying the inside of the substrate 10 to be processed.

In the present embodiment, the laser beam LB forms the modified layer 15 serving as a starting point of fracture inside the substrate 10 to be processed, but a laser processing groove may be formed on the upper surface of the substrate 10 to be processed. The laser processing groove may or may not penetrate the substrate 10 to be processed in the thickness direction. When the laser processing groove is formed on the upper surface of the substrate to be processed 10, a laser beam having an absorptivity with respect to the substrate 10 to be processed is used.

The laser processing apparatus 210 has a moving mechanism 214 (see FIGS. 1 and 2) that moves the laser processing stage 211 to move the position of the irradiation point of the laser beam LB on the upper surface of the substrate 10 to be processed. The moving mechanism 214 moves the laser processing stage 211 in the X axis direction, the Y axis direction, and the θ direction.

The moving mechanism 214 includes, for example, an XYθ stage, and includes a Y-axis guide 215, a Y-axis slider that moves along the Y-axis guide 215, an X-axis guide 216, and an X-axis slider that moves along the X-axis guide. , A rotation axis parallel to the Z axis, and a turntable that rotates about the rotation axis. The Y-axis guide 215 is fixed to the base frame 217, for example. An X-axis guide 216 is fixed to the Y-axis slider that moves along the Y-axis guide. A rotary disk is rotatably attached to the X-axis slider that moves along the X-axis guide 216. A laser processing stage 211 is fixed to the rotating disk. The laser processing stage 211 moves in the Y-axis direction along the Y-axis guide 215, moves in the X-axis direction along the X-axis guide 216, and rotates around the rotation axis.

The moving mechanism 214 is configured with an XYθ stage in this embodiment, but may be configured with an XYZθ stage. That is, the laser processing stage 211 may be movable in the Z-axis direction.

The laser processing apparatus 210 includes a base frame 217, a plurality of support columns 218 erected on the base frame 217, and a ceiling frame 219 supported by the plurality of support columns 218. A movement mechanism 214 is installed on the base frame 217, and a laser processing head 212 is attached to the ceiling frame 219.

The thinning device 220 (see FIGS. 1 and 2) includes a rotary table 221, a rotary chuck 222, a primary processing unit 223, a secondary processing unit 225, a tertiary processing unit 226, and a transfer robot 227. Have.

The rotary table 221 is rotated around the vertical axis. Around the rotation center line of the rotary table 221, a plurality of (for example, four) rotary chucks 222 are arranged at equal intervals. Each of the plurality of rotating chucks 222 rotates together with the rotary table 221 and moves to the delivery position A0, the primary processing position A1, the secondary processing position A2, and the tertiary processing position A3.

The delivery position A0 serves as both a position where the transfer robot 227 places the substrate 10 to be processed before grinding on the rotary chuck 222 and a position where the transfer robot 227 receives the substrate 10 after grinding from the rotary chuck 222. The primary processing position A1 is a position where the primary processing unit 223 performs primary processing (for example, primary grinding). The secondary processing position A2 is a position where the secondary processing unit 225 performs secondary processing (for example, secondary grinding). The tertiary processing position A3 is a position where the tertiary processing unit 226 performs tertiary processing (for example, tertiary grinding).

Each of the plurality of rotating chucks 222 holds the substrate 10 to be processed from below via the protective tape 40 (see FIG. 6). That is, each of the plurality of rotating chucks 222 holds the substrate to be processed 10 from below with the second main surface 12 of the substrate to be processed 10 facing upward. Each of the plurality of rotating chucks 222 has a circular suction surface having a diameter larger than the diameter of the substrate to be processed 10, and sucks the substrate to be processed 10 on the suction surface. Each of the plurality of rotating chucks 222 is, for example, a vacuum chuck that vacuum-sucks the substrate 10 to be processed, but may be an electrostatic chuck that electrostatically chucks the substrate 10 to be processed.

FIG. 6 is a diagram showing a primary processing unit of the thinning device according to the first embodiment. The primary processing unit 223 performs primary grinding of the substrate 10 to be processed. The primary processing unit 223 has a rotating grindstone 224. The rotating grindstone 224 descends while rotating and grinds the upper surface (second main surface 12) of the substrate 10 to be processed that rotates together with the rotating chuck 222. When the target substrate 10 is thinned after laser processing of the target substrate 10, cracks extend in the thickness direction starting from the modified layer 15 shown in FIG. 5, and the target substrate 10 has a plurality of chips. It is divided into 19. Further, the modified layer 15 shown in FIG. 5 is removed by grinding.

Since the secondary processing unit 225 and the tertiary processing unit 226 are configured in the same manner as the primary processing unit 223, illustration is omitted. However, the average grain size of the abrasive grains of the rotary grindstone of the secondary processing unit 225 is smaller than the average grain diameter of the abrasive grains of the rotary grindstone 224 of the primary machining unit 223. Moreover, the average particle diameter of the abrasive grains of the rotary grindstone of the tertiary processing unit 226 is smaller than the average grain diameter of the abrasive grains of the rotary grindstone of the secondary machining unit 225.

The transfer robot 227 is not particularly limited, but is an articulated robot having a plurality of arms (see FIG. 1). The articulated robot has a suction pad that sucks the substrate 10 to be processed at the tip. The suction surface of the suction pad is directed downward. The suction pad sucks the target substrate 10 from above with the first main surface 11 of the target substrate 10 facing downward. The suction pad has a circular suction surface having a diameter larger than the diameter of the substrate to be processed 10 and sucks the substrate to be processed 10 on the suction surface. The suction pad is movable in the X axis direction, the Y axis direction, the Z axis direction, and the θ direction.

The transfer robot 227 transfers the substrate 10 to be processed to the rotary chuck 222, the lower surface cleaning unit 228, and the upper surface cleaning unit 229 (see FIG. 2) located at the delivery position A0. The transfer robot 227 receives the ground substrate 10 to be processed from the rotary chuck 222, transfers it to the lower surface cleaning unit 228, and then transfers it to the upper surface cleaning unit 229. When the upper surface cleaning unit 229 receives the substrate 10 to be processed, the transfer robot 227 leaves the upper surface cleaning unit 229.

The lower surface cleaning unit 228 cleans the protective tape 40 bonded to the lower surface (first main surface 11) of the substrate 10 to be processed. While the lower surface cleaning unit 228 cleans the protective tape 40, the suction pad of the transfer robot 227 sucks the target substrate 10 from above with the first main surface 11 of the target substrate 10 facing down.

The lower surface cleaning unit 228 cleans the suction surface (lower surface) of the suction pad of the transfer robot 227 while the suction pad of the transfer robot 227 does not suck the substrate 10 to be processed.

The upper surface cleaning unit 229 cleans the ground upper surface (second main surface 12) of the substrate 10 to be processed. For example, the upper surface cleaning unit 229 includes a spin chuck that holds the substrate to be processed from below, and a cleaning liquid nozzle that supplies the cleaning liquid to the upper surface of the substrate 10 to be processed that rotates together with the spin chuck.

The upper surface cleaning unit 229 may include a detector that detects the center position and crystal orientation of the substrate 10 to be processed. The detector detects the crystal orientation of the substrate to be processed 10 by detecting the position of the notch 14 (see FIG. 4) representing the crystal orientation of the substrate 10 to be processed. The detector may detect the position of the orientation flat instead of detecting the position of the notch 14. In order to image a plurality of points on the outer periphery of the substrate 10 to be processed, the spin chuck rotates around the vertical axis. The detector transmits a captured image signal to the control device 400. The control device 400 obtains the center position and crystal orientation of the substrate to be processed 10 in the coordinate system fixed to the spin chuck by performing image processing on the image captured by the detector.

The thin plate apparatus 220 and the carry-in / out station 100 are arranged on the opposite sides with the laser processing apparatus 210 sandwiched in the horizontal direction (see FIGS. 1 and 2). The thinning device 220 is disposed on the X axis direction positive side of the laser processing apparatus 210, and the loading / unloading station 100 is disposed on the X axis direction negative side of the laser processing apparatus 210. A laser processing apparatus 210 that does not generate grinding waste is disposed between the thinning device 220 that generates grinding waste and the carry-in / out station 100. Therefore, the loading / unloading station 100 can be kept clean, and the processed substrate 10 after processing can be kept clean.

The first processing station 200 moves while holding the substrate to be processed 10 between the carry-in / out station 100 and the thinning device 220, and transfers the substrate to be processed 10 to the carry-in / out station 100 and the thinning device 220. A device 230 is provided. The substrate 10 to be processed may be transferred from the carry-in / out station 100 to the transfer device 230, or the substrate 10 to be processed may be transferred from the transfer device 230 to the carry-in / out station 100. Further, the substrate 10 to be processed may be transferred from the thin plate apparatus 220 to the transfer device 230, or the substrate 10 to be processed may be transferred from the transfer device 230 to the thin plate apparatus 220.

The transfer device 230 may transfer the substrate 10 to be processed after the laser processing is performed, or may transfer the substrate 10 to be processed before the laser processing is performed. While the transport device 230 transports the substrate to be processed 10 outside the laser processing device 210, the laser processing device 210 can perform laser processing of another substrate to be processed 10 and throughput can be improved.

The conveyance device 230 has a shuttle 233 that moves along a guide rail 232 that is disposed vertically above the laser processing device 210. For example, the guide rail 232 extends in the X-axis direction from vertically above the moving mechanism 214 of the laser processing apparatus 210 to vertically above the upper surface cleaning unit 229 of the thinning apparatus 220. Since the transfer device 230 and the laser processing device 210 are stacked in the vertical direction, the first processing station 200 is installed as compared with the case where the transfer device 230 and the laser processing device 210 are arranged in the horizontal direction. The area can be reduced.

The transport device 230 has a plurality (for example, two) of shuttles 233 at intervals in the vertical direction. Hereinafter, the upper shuttle 233 is also referred to as “upper shuttle 233-1”, and the lower shuttle 233 is also referred to as “lower shuttle 233-2”.

The upper shuttle 233-1 and the lower shuttle 233-2 are independently movable in the X-axis direction and the θ direction. The upper shuttle 233-1 and the lower shuttle 233-2 are immovable in the Y-axis direction, but may be movable in the Y-axis direction. In addition, the upper shuttle 233-1 and the lower shuttle 233-2 are not movable in the Z-axis direction, but may be movable in the Z-axis direction.

The upper shuttle 233-1 and the lower shuttle 233-2 each have a substrate holding part that holds the substrate 10 from below with the second main surface 12 of the substrate 10 facing upward. The substrate holding part has a circular suction surface having a diameter larger than the diameter of the substrate to be processed 10 and sucks the substrate to be processed 10 on the suction surface. The substrate holding unit is a vacuum chuck that vacuum-sucks the substrate 10 to be processed, but may be an electrostatic chuck that electrostatically chucks the substrate 10 to be processed.

The upper shuttle 233-1 and the lower shuttle 233-2 hold the substrate to be processed 10 in which the processing progress stage is different. For example, the upper shuttle 233-1 holds the target substrate 10 before laser processing, and the lower shuttle 233-3 holds the target substrate 10 after laser processing. It is possible to transport the substrate 10 to be processed at different stages of processing at intervals in the vertical direction, and to suppress the congestion of the flow of the substrate 10 to be processed.

The transfer device 230 has a detector 234 that is attached to the upper shuttle 233-1 and detects the center position and crystal orientation of the substrate 10 to be processed held by the upper shuttle 233-1. The detector 234 detects the crystal orientation of the substrate to be processed 10 by detecting the position of the notch 14 (see FIG. 4) representing the crystal orientation of the substrate 10 to be processed. The detector 234 may detect the position of the orientation flat instead of detecting the position of the notch 14.

The detector 234 includes an image sensor, for example, and images the outer periphery of the substrate 10 to be processed held by the upper shuttle 233-1. In order to image a plurality of points on the outer periphery of the substrate 10 to be processed, the substrate holder of the upper shuttle 233-1 rotates around the vertical axis. The detector 234 transmits a captured image signal to the control device 400. The control apparatus 400 obtains the center position and crystal orientation of the substrate 10 to be processed in the coordinate system fixed to the substrate holder of the upper shuttle 233-1 by performing image processing on the image captured by the detector 234.

The detector 234 is attached only to the upper shuttle 233-1 in this embodiment, but may be attached only to the lower shuttle 233-2, and attached to both the upper shuttle 233-1 and the lower shuttle 233-2. Also good. In any case, since the transfer device 230 has an alignment function in addition to the transfer function, the transfer device 230 can be multi-functional and the installation area of the first processing station 200 can be reduced.

The first processing station 200 receives the substrate to be processed 10 from the shuttle 233 (for example, the upper shuttle 233-1) to which the detector 234 is attached, and transfers the received substrate 10 to the laser processing apparatus 210. 250. The first transfer arm 250 can be moved in the Y-axis direction along the Y-axis guide 251, and can be moved in the Z-axis direction along the Z-axis guide 252. The first transfer arm 250 is not movable in the X-axis direction, but may be movable in the X-axis direction.

The first transfer arm 250 holds the substrate to be processed 10 from above with the first main surface 11 of the substrate to be processed 10 facing downward. The first transfer arm 250 has a circular suction surface having a diameter larger than the diameter of the substrate to be processed 10, and sucks the substrate to be processed 10 on the suction surface. The first transfer arm 250 is a vacuum chuck that vacuum-sucks the substrate 10 to be processed, but may be an electrostatic chuck that electrostatically chucks the substrate 10 to be processed.

The first transfer arm 250 is used when the processing target substrate 10 is thinned after laser processing of the processing target substrate 10 (see FIG. 7). In this case, as will be described in detail later, the transfer device 122 of the loading / unloading station 100 loads the substrate 10 to be processed into the upper shuttle 233-1, and then the first transfer arm 250 moves from the upper shuttle 233-1 to the substrate 10 to be processed. Unload.

In order to carry out the substrate 10 to be processed from the upper shuttle 233-1, the transfer device 122 of the load / unload station 100 may be used, but in the present embodiment, the first transfer arm 250 is used. According to the present embodiment, the path through which the substrate 10 is carried into the upper shuttle 233-1 is different from the path through which the substrate 10 is carried out from the upper shuttle 233-1. Can suppress traffic jams.

The first transfer arm 250 is movable vertically above the moving mechanism 214 that moves the laser processing stage 211. Since the first transfer arm 250 and the moving mechanism 214 of the laser processing stage 211 are stacked in the vertical direction, the first transfer arm 250 and the moving mechanism 214 of the laser processing stage 211 are arranged side by side in the horizontal direction. Compared to the case, the installation area of the substrate processing system 1 can be reduced. The first transfer arm 250 moves inside the outer peripheral edge of the base frame 217 so as not to protrude from the base frame 217 of the laser processing apparatus 210 when viewed in the vertical direction.

The first processing station 200 has a second transfer arm 255 (see FIG. 2) that receives the substrate 10 to be processed from the thinning apparatus 220 and transfers the received substrate 10 to the laser processing apparatus 210. The second transfer arm 255 is movable along the X-axis guide 256 in the X-axis direction, and is movable along the Z-axis guide 257 in the Z-axis direction. Note that the second transfer arm 255 is not movable in the X-axis direction, but may be movable in the X-axis direction.

The second transfer arm 255 holds the substrate to be processed 10 from above with the first main surface 11 of the substrate to be processed 10 facing downward. The second transfer arm 255 has a circular suction surface having a diameter larger than the diameter of the substrate to be processed 10, and sucks the substrate to be processed 10 on the suction surface. The second transfer arm 255 is a vacuum chuck that vacuum-sucks the substrate 10 to be processed, but may be an electrostatic chuck that electrostatically chucks the substrate 10 to be processed.

The second transfer arm 255 is used when laser processing of the substrate to be processed 10 is performed after the substrate 10 to be processed is thinned (see FIG. 9). In this case, as will be described in detail later, the transfer device 230 of the first processing station 200 carries the substrate 10 to be processed into the thinning device 220, and then the second transfer arm 255 removes the substrate 10 to be processed from the thinning device 220. Take it out.

In order to carry out the substrate 10 to be processed from the thinning apparatus 220, the transfer device 230 of the first processing station 200 may be used, but in this embodiment, the second transfer arm 255 is used. According to the present embodiment, since the path through which the substrate to be processed 10 is carried into the thinning apparatus 220 is different from the path through which the substrate to be processed 10 is carried out from the thinning apparatus 220, the flow of the substrate 10 to be processed is congested. Can be suppressed.

The substrate processing system 1 (see FIG. 1) includes a second processing station 300 that processes the target substrate 10 processed by the first processing station 200. The second processing station 300 includes an ultraviolet irradiation device 310, a mounting device 320, a peeling device 330, an ID sticking device 340, and a transfer region 350.

The ultraviolet irradiation device 310 is disposed on the Y axis direction negative side of the first processing station 200 and is adjacent to the thinning device 220. The ultraviolet irradiation device 310 irradiates the protective tape 40 that protects the substrate to be processed 10 with ultraviolet rays. The adhesive of the protective tape 40 can be cured by irradiation with ultraviolet rays, and the adhesive strength of the protective tape 40 can be reduced. After the adhesive force is reduced, the protective tape 40 can be easily peeled from the substrate to be processed 10 by a peeling operation.

The ultraviolet irradiation device 310 has a rod-shaped ultraviolet lamp longer than the diameter of the substrate to be processed 10 and an internal transfer arm that passes vertically above the ultraviolet lamp. The ultraviolet lamp is parallel to the X-axis direction. The internal transfer arm holds the substrate 10 to be processed from above with the protective tape 40 facing downward. The internal transfer arm has a circular suction surface having a diameter larger than the diameter of the substrate to be processed 10 and sucks the substrate to be processed 10 on the suction surface. The substrate to be processed 10 irradiated with the ultraviolet rays is transferred to the mount device 320.

The mounting device 320 mounts the substrate to be processed 10 irradiated with ultraviolet rays on the frame 60 via the adhesive tape 50. The substrate to be processed 10 is disposed in the opening of the frame 60, and the adhesive tape 50 is bonded to the upper surface of the frame 60 and the ground upper surface (second main surface 12) of the substrate to be processed 10. The adhesive tape 50 is provided on the side opposite to the protective tape 40 with respect to the substrate 10 to be processed.

The mounting device 320 may attach the substrate 10 to be processed to the frame 60 only through the adhesive tape 50, but in this embodiment, the mounting device 320 attaches to the frame 60 via the adhesive tape 50 and the DAF 52 laminated in advance. The target substrate 10 mounted on the frame 60 via the adhesive tape 50 is turned upside down and then conveyed to the peeling device 330.

The peeling device 330 peels the protective tape 40 from the substrate to be processed 10 attached to the frame 60 via the adhesive tape 50. The peeling device 330 peels the protective tape 40 from the target substrate 10 while sequentially deforming the protective tape 40 from one end side to the other end side of the target substrate 10. Thereby, the protective tape 40 and the to-be-processed substrate 10 can be peeled smoothly. Further, while the protective tape 40 and the substrate to be processed 10 are peeled off, the substrate to be processed 10 is held flat. The substrate to be processed 10 from which the protective tape 40 has been peeled off is conveyed to the ID sticking device 340.

The ID sticking device 340 reads the identification information 16 (see FIG. 4) of the substrate 10 from which the protective tape 40 has been peeled off, prints the read identification information 16 on the label 62 (see FIG. 4), and prints the printed label 62. Affixed to the frame 60. The identification information 16 formed in advance on the substrate to be processed 10 is information for identifying the substrate to be processed 10 and is represented by numbers, characters, symbols, a one-dimensional code, a two-dimensional code, or the like. The identification information 16 formed in advance on the substrate 10 to be processed and the identification information to be printed on the label 62 may be expressed in different forms with the same contents as shown in FIG.

The conveyance area 350 (see FIG. 1) is adjacent to the ultraviolet irradiation device 310, the mounting device 320, the peeling device 330, and the ID sticking device 340. The ultraviolet irradiation device 310 is disposed on the Y axis direction positive side of the transport region 350. The mounting device 320 is disposed on the X axis direction positive side of the transport region 350. The peeling device 330 and the ID sticking device 340 are arranged on the Y axis direction negative side of the transport region 350.

The transfer area 350 is adjacent to the transfer area 120 of the loading / unloading station 100. The transfer area 120 of the carry-in / out station 100 is arranged on the Y axis direction positive side of the transfer area 350 of the second processing station 300.

A guide rail 351 extending in the X-axis direction is installed in the transport area 350, and the transport device 352 moves along the guide rail 351. The transport device 352 can be moved not only in the X-axis direction but also in the Y-axis direction. Note that the transfer device 352 may be movable in the Z-axis direction or the θ direction.

The transfer device 352 receives the substrate 10 to be processed from the ID sticking device 340 and transfers the received substrate 10 to the loading / unloading station 100. The transfer device 352 can also deliver the substrate to be processed 10 to the ultraviolet irradiation device 310, the mounting device 320, the peeling device 330, and the ID sticking device 340.

The substrate processing system 1 (see FIGS. 1 and 2) includes a control device 400 that controls the operation of the loading / unloading station 100, the operation of the first processing station 200, and the operation of the second processing station 300. The control device 400 is configured by a computer, for example, and includes a CPU (Central Processing Unit) 401, a storage medium 402 such as a memory, an input interface 403, and an output interface 404. The control device 400 performs various controls by causing the CPU 401 to execute a program stored in the storage medium 402. In addition, the control device 400 receives a signal from the outside through the input interface 403 and transmits a signal to the outside through the output interface 404.

The program of the control device 400 is stored in the information storage medium and installed from the information storage medium. Examples of the information storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), and a memory card. The program may be downloaded from a server via the Internet and installed.

FIG. 7 is a flowchart showing the steps of the substrate processing method according to the first embodiment, and is a flowchart when the processing target substrate is thinned after laser processing of the processing target substrate. FIG. 8 is a flowchart showing an example of a process performed after the process S114 of FIG. 7 and 8 are performed under the control of the control device 400. The order of the plurality of steps shown in FIGS. 7 and 8 is not particularly limited. Moreover, some processes shown in FIGS. 7 and 8 may not be performed.

The substrate processing method includes a step S 101 in which the first holder 123 takes out the substrate 10 to be processed from the cassette 101 placed on the cassette stand 110 and conveys the extracted substrate 10 to the first processing station 200. In the step S101, the first holder 123 conveys the substrate 10 to be processed to the upper shuttle 233-1. The upper shuttle 233-1 receives the target substrate 10 from the first holder 123 and holds the received target substrate 10.

The substrate processing method includes step S102 in which the upper shuttle 233-1 holds the substrate to be processed 10 and the detector 234 detects the center position and crystal orientation of the substrate to be processed 10 held by the upper shuttle 233-1. Have. While the detector 234 detects the center position and crystal orientation of the substrate 10 to be processed, the upper shuttle 233-1 does not move along the guide rail 232 in the X-axis direction. During this time, the substrate holder of the upper shuttle 233-1 rotates around the vertical axis.

The substrate processing method includes step S103 in which the first transfer arm 250 receives the substrate 10 to be processed from the upper shuttle 233-1 and transfers the received substrate 10 to the laser processing apparatus 210 from the upper shuttle 233-1.

The substrate processing method includes step S104 in which the laser processing apparatus 210 receives the substrate 10 to be processed from the first transfer arm 250 and holds the received substrate 10 to be processed by the laser processing stage 211.

In the step S104, the upper stage after the step S102 and before the step S103 so that the crystal orientation of the substrate 10 to be processed (that is, the position of the notch 14) with respect to the laser processing stage 211 becomes a preset orientation. The shuttle 233-1 rotates the substrate 10 to be processed. In step S103, the first transfer arm 250 moves the substrate 10 to be processed from the upper shuttle 233-1 so that the center position of the laser processing stage 211 and the center position of the substrate 10 to be processed match in step S104. receive.

The substrate processing method includes step S105 in which the laser processing apparatus 210 performs laser processing on the substrate 10 to be processed. In step S 105, the laser processing stage 211 holds the target substrate 10, and the laser processing head 212 applies the laser beam LB for processing the target substrate 10 to the target substrate 10 held on the laser processing stage 211. Focus and irradiate.

The substrate processing method includes step S106 in which the second holder 124 receives the substrate to be processed 10 from the laser processing apparatus 210 and conveys the received substrate 10 to be processed from the laser processing apparatus 210 to the lower shuttle 233-2.

The substrate processing method includes step S107 in which the lower shuttle 233-2 receives the substrate 10 to be processed from the second holder 124 and transports the received substrate 10 to the thin plate apparatus 220.

The substrate processing method includes step S108 in which the transfer robot 227 of the thinning apparatus 220 receives the substrate 10 to be processed from the lower shuttle 233-2 and places the received substrate 10 on the rotary chuck 222.

The substrate processing method includes a step S109 in which the thin plate apparatus 220 thins the substrate 10 to be processed. In the step S109, the rotary chuck 222 holds the substrate 10 to be processed, and the rotating grindstone 224 descends while rotating to contact the substrate 10 to be processed, and the substrate 10 that rotates together with the rotary chuck 222 is ground. .

The substrate processing method includes step S110 in which the transfer robot 227 of the thinning apparatus 220 receives the substrate 10 to be processed from the rotary chuck 222 and transfers the received substrate 10 to the lower surface cleaning unit 228.

The substrate processing method includes a step S111 in which the lower surface cleaning unit 228 cleans the protective tape 40 bonded to the lower surface (first main surface 11) of the substrate to be processed 10 held by the transfer robot 227.

The substrate processing method includes a step S112 in which the transfer robot 227 transfers the substrate 10 to be processed from the lower surface cleaning unit 228 to the upper surface cleaning unit 229.

The substrate processing method includes a step S113 in which the upper surface cleaning unit 229 receives the substrate 10 to be processed from the transfer robot 227 and cleans the ground upper surface (second main surface 12) of the received substrate 10 to be processed.

The substrate processing method includes step S 114 in which the internal transfer arm of the ultraviolet irradiation device 310 receives the substrate to be processed 10 from the upper surface cleaning unit 229 and carries the received substrate to be processed 10 into the ultraviolet irradiation device 310.

The substrate processing method includes a step S115 in which the ultraviolet lamp of the ultraviolet irradiation device 310 irradiates the protective tape 40 that protects the substrate to be processed 10 with ultraviolet rays.

The substrate processing method includes a step S116 in which the internal transfer arm of the ultraviolet irradiation device 310 transfers the substrate 10 to be processed from the ultraviolet irradiation device 310 to the mount device 320.

In the above steps S114 to S116, the first main surface 11 protected by the protective tape 40 of the substrate to be processed 10 is directed downward, and the second main surface 12 ground by the thinning device 220 of the substrate to be processed 10 is upward. Is done.

The substrate processing method includes a step S117 in which the mount device 320 receives the substrate 10 to be processed from the transfer arm of the ultraviolet irradiation device 310 and mounts the received substrate 10 to the frame 60 via the adhesive tape 50. The substrate to be processed 10 is disposed in the opening of the frame 60, and the adhesive tape 50 is bonded to the upper surface of the frame 60 and the ground upper surface (second main surface 12) of the substrate to be processed 10.

The mounting device 320 may attach the substrate 10 to be processed to the frame 60 only through the adhesive tape 50, but in this embodiment, the mounting device 320 attaches to the frame 60 via the adhesive tape 50 and the DAF 52 laminated in advance. The substrate 10 to be processed mounted on the frame 60 is turned upside down and then conveyed to the peeling device 330.

The substrate processing method includes a step S118 in which the peeling device 330 peels the protective tape 40 from the substrate 10 to be processed. The unnecessary protective tape 40 can be removed. The to-be-processed substrate 10 from which the protective tape 40 has been peeled off by the peeling device 330 is conveyed to the ID sticking device 340.

In the substrate processing method, the ID pasting apparatus 340 reads the identification information 16 (see FIG. 4) formed in advance on the substrate 10 to be processed, and prints the read identification information 16 on the label 62 (see FIG. 4). A step S119 for attaching the label 62 to the frame 60 is included.

The substrate processing method includes step S120 in which the transfer device 352 of the second processing station 300 transfers the substrate 10 to be processed mounted on the frame 60 via the adhesive tape 50 from the ID sticking device 340 to the carry-in / out station 100. .

In the substrate processing method, the third holder 125 receives the substrate to be processed 10 mounted on the frame 60 from the transfer device 352 via the adhesive tape 50, and the received substrate to be processed 10 is placed on the cassette table 110. Step S121 for storing in the cassette 102. After step S121, the current process ends.

FIG. 9 is a flowchart showing the steps of the substrate processing method according to the first embodiment, and is a flowchart in the case where laser processing is performed on the substrate to be processed after the substrate to be processed is thinned. A plurality of steps shown in FIG. 9 are performed under the control of the control device 400. Note that the order of the plurality of steps shown in FIG. 9 is not particularly limited. In addition, some processes illustrated in FIG. 9 may not be performed.

In the substrate processing method, the first holder 123 takes out the substrate 10 to be processed from the cassette 101 placed on the cassette stand 110 and the extracted substrate 10 is transferred to the first processing station 200 in the same manner as in step S101. It has process S201 to convey. In the step S201, the first holder 123 conveys the substrate 10 to be processed to the upper shuttle 233-1. The upper shuttle 233-1 receives the substrate to be processed 10 from the first holder 123 and holds the received substrate 10 to be processed.

In the substrate processing method, as in step S102, the upper shuttle 233-1 holds the substrate to be processed 10, and the center position of the substrate 10 to be processed and the crystal in which the detector 234 is held by the upper shuttle 233-1. It has process S202 which detects a direction.

The substrate processing method includes step S203 in which the upper shuttle 233-1 transports the substrate 10 to be processed to the thinning device 220.

The step S202 and the step S203 may be performed in parallel to reduce the processing time. That is, the upper shuttle 233-1 may detect the center position and the crystal orientation of the substrate to be processed 10 while conveying the substrate to be processed 10 to the thinning device 220.

The substrate processing method includes step S204 in which the transfer robot 227 of the thinning apparatus 220 receives the substrate 10 to be processed from the upper shuttle 233-1 and transfers the received substrate 10 to the rotary chuck 222.

The substrate processing method includes step S 205 in which the rotating chuck 222 of the thinning apparatus 220 receives the target substrate 10 from the transfer robot 227 of the thinning apparatus 220 and holds the received target substrate 10.

In step S205, the upper shuttle is provided after step S202 and before step S204 so that the crystal orientation of the substrate 10 to be processed (that is, the position of the notch 14) with respect to the rotary chuck 222 becomes a preset orientation. 233-1 rotates the substrate 10 to be processed. Further, in step S204, the transfer robot 227 of the thinning apparatus 220 is moved from the upper shuttle 233-1 to the substrate 10 to be processed so that the center position of the rotary chuck 222 and the center position of the substrate 10 to be processed match in step S205. Receive.

The substrate processing method includes a step S206 in which the thin plate apparatus 220 thins the substrate 10 to be processed. In the step S206, the rotating chuck 222 holds the substrate 10 to be processed, and the rotating grindstone 224 descends while rotating to contact the substrate 10 to be processed, and the substrate 10 that rotates together with the rotating chuck 222 is ground. .

The substrate processing method includes step S207 in which the transfer robot 227 of the thinning apparatus 220 receives the substrate 10 to be processed from the rotary chuck 222 and transfers the received substrate 10 to the lower surface cleaning unit 228.

The substrate processing method includes a step S208 in which the lower surface cleaning unit 228 cleans the protective tape 40 bonded to the lower surface (first main surface 11) of the substrate to be processed 10 held by the transfer robot 227.

The substrate processing method includes step S209 in which the transfer robot 227 transfers the substrate 10 to be processed from the lower surface cleaning unit 228 to the upper surface cleaning unit 229.

The substrate processing method includes step S210 in which the upper surface cleaning unit 229 receives the substrate 10 to be processed from the transfer robot 227 and cleans the ground upper surface (second main surface 12) of the received substrate 10 to be processed.

The substrate processing method includes step S211 in which the second transfer arm 255 receives the substrate 10 to be processed from the upper surface cleaning unit 229 and transfers the received substrate 10 to the laser processing apparatus 210. The laser processing apparatus 210 receives the substrate to be processed 10 from the second transport arm 255 and holds the received substrate 10 to be processed on the laser processing stage 211.

The substrate processing method includes step S212 in which the laser processing apparatus 210 performs laser processing on the substrate 10 to be processed. In step S 212, the laser processing stage 211 holds the target substrate 10, and the laser processing head 212 applies the laser beam LB for processing the target substrate 10 to the target substrate 10 held on the laser processing stage 211. Focus and irradiate.

The substrate processing method includes a step S213 in which the second holder 124 receives the substrate 10 to be processed from the laser processing apparatus 210 and transports the received substrate 10 to the second processing station 300.

The substrate processing method includes step S214 in which the transfer device 352 receives the substrate 10 to be processed from the second holder 124 and transfers the received substrate 10 to the ultraviolet irradiation device 310. In step S 214, the internal transfer arm of the ultraviolet irradiation device 310 receives the substrate to be processed 10 from the transfer device 352.

The substrate processing method includes steps S115 to S121 shown in FIG. 8 after step S214. Since steps S115 to S121 have already been described, description thereof will be omitted. After step S121, the current process ends.

[Second Embodiment]
FIG. 10 is a plan view showing a substrate processing system according to the second embodiment. FIG. 11 is a view showing the substrate processing system according to the second embodiment, and is a cross-sectional view taken along the line XI-XI of FIG. 10 and 11, the X axis direction, the Y axis direction, and the Z axis direction are directions perpendicular to each other, the X axis direction and the Y axis direction are horizontal directions, and the Z axis direction is a vertical direction. The rotation direction with the vertical axis as the center of rotation is also called the θ direction.

The substrate processing system 1A performs laser processing of the substrate 10 to be processed. In addition, the substrate processing system 1A thins the substrate 10 to be processed. Either laser processing of the substrate to be processed 10 or thinning of the substrate to be processed 10 may be performed first. Regardless of which is performed first, the substrate processing system 1A is configured to be able to cope with it.

The substrate processing system 1A joins the substrate to be processed 10 and the support substrate 20 to reinforce the substrate 10 to be processed before laser processing of the substrate 10 to be processed and thinning of the substrate 10 to be processed. 30 (see FIG. 14) is produced. A bonding surface bonded to the support substrate 20 of the substrate to be processed 10 is the first main surface 11. Therefore, the protective tape 40 shown in FIG. 3 is not bonded to the first main surface 11. In addition, the to-be-processed substrate 10 does not need to be joined with the support substrate 20, In that case, the protective tape 40 is bonded to the 1st main surface 11 of the to-be-processed substrate 10. FIG.

The substrate processing system 1A includes a loading / unloading station 100A into which a cassette 101A that accommodates the substrate to be processed 10 is loaded / unloaded. In addition to the cassette 101A for accommodating the substrate 10 to be processed, the cassette 102A for accommodating the supporting substrate 20 and the

cassettes

103A and 104A for accommodating the superposed substrate 30 are carried in and out of the loading / unloading station 100A.

The loading / unloading station 100 A includes a cassette table 110 A on which a cassette 101 A that accommodates the substrate 10 to be processed is placed. The cassette stand 110A includes a plurality of (for example, four) placement plates 112A. The plurality of placement plates 112A are arranged at intervals in the Y-axis direction. A plurality of

cassettes

101A, 102A, 103A, and 104A are placed on the plurality of placement plates 112A. The superposed substrate 30 is identified as a non-defective product and a defective product, and is accommodated in a non-defective product cassette 103A and a defective product cassette 104A.

The loading / unloading station 100A has a transfer area 120A to which the substrate 10 to be processed is transferred. The transfer area 120A is arranged on the X axis direction positive side of the cassette stand 110A. A guide rail 121A extending in the Y-axis direction is installed in the transport region 120A, and the transport device 122A moves along the guide rail 121A.

The transfer device 122A includes a first holding tool 123A as a holding unit that holds the substrate 10 to be processed. In the present embodiment, since the substrate to be processed 10 is bonded to the support substrate 20 and the substrate to be processed 10 is reinforced, the transfer device 122A does not have the second holder 124 shown in FIGS. In addition, the to-be-processed substrate 10 does not need to be joined to the support substrate 20, and in that case, the transfer device 122 A may include the second holder 124. Further, in the present embodiment, the substrate processing system 1A does not include the second processing station 300 illustrated in FIG. 1, and thus the transfer device 122A does not include the third holder 125 illustrated in FIGS. The substrate processing system 1A may include the second processing station 300. In this case, the transfer device 122A may include the third holder 125.

The first holder 123A is movable not only in the Y-axis direction but also in the X-axis direction, the Z-axis direction, and the θ direction. The first holder 123A takes out the substrate 10 to be processed from the cassette 101A placed on the cassette base 110A. The first holder 123A takes out the support substrate 20 from the cassette 102A placed on the cassette table 110A. Furthermore, the first holder 123A stores the superposed substrate 30 in a non-defective cassette 103A or a defective cassette 104A placed on the cassette base 110A.

The first holder 123A is formed in a fork shape that is divided into two forks so as to be easily inserted into each of the plurality of

cassettes

101A, 102A, 103A, and 104A. The first holder 123A can be turned upside down to turn the substrate 10 to be turned upside down.

The substrate processing system 1A includes a first processing station 200A that processes the substrate to be processed 10 taken out from the cassette 101A. The first processing station 200 A includes a laser processing apparatus 210 that performs laser processing of the substrate to be processed 10 and a thin plate forming apparatus 220 that thins the substrate to be processed 10.

The thin plate apparatus 220 and the carry-in / out station 100A are disposed on the opposite sides with the laser processing apparatus 210 sandwiched in the horizontal direction. The thinning device 220 is arranged on the X axis direction positive side of the laser processing apparatus 210, and the loading / unloading station 100A is arranged on the X axis direction negative side of the laser processing apparatus 210. A laser processing device 210 that does not generate grinding waste is disposed between the thinning device 220 that generates grinding waste and the carry-in / out station 100A. Therefore, the loading / unloading station 100A can be kept clean, and the processed substrate 10 after processing can be kept clean.

The first processing station 200 A moves while holding the substrate 10 to be processed between the loading / unloading station 100 A and the thinning device 220, and transfers the processing substrate 10 to the loading / unloading station 100 A and the thinning device 220. A device 230A is provided. The substrate 10 to be processed may be delivered from the carry-in / out station 100A to the transfer device 230A, or the substrate to be processed 10 may be delivered from the transfer device 230A to the carry-in / out station 100A. Further, the substrate to be processed 10 may be transferred from the thin plate apparatus 220 to the transfer apparatus 230A, or the substrate to be processed 10 may be transferred from the transfer apparatus 230A to the thin plate apparatus 220.

The transport device 230A may transport the substrate 10 to be processed after the laser processing is performed, or may transport the substrate 10 to be processed before the laser processing is performed. While the transport device 230A transports the substrate 10 to be processed outside the laser processing device 210, the laser processing device 210 can perform laser processing of another substrate 10 to be processed, and throughput can be improved. The transport device 230 A can transport the support substrate 20. Further, the transport device 230 A can transport the superposed substrate 30.

The transfer device 230A includes a transfer arm 233A that moves along a guide rail 232A installed in a transfer region 231A that is adjacent to the laser processing device 210 in the horizontal direction. The transfer region 231A is adjacent to the laser processing device 210, the thinning device 220, and the transfer region 120A of the carry-in / out station 100A. The laser processing device 210 is disposed on the Y axis direction positive side of the transport region 231A. The thinning device 220 is disposed on the X axis direction positive side of the transport region 231A. The transfer area 120A of the carry-in / out station 100A is disposed on the X axis direction negative side of the transfer area 231A.

The guide rail 232A extends in the X-axis direction. The transfer arm 233A is movable not only in the X axis direction but also in the Y axis direction, the Z axis direction, and the θ direction. For example, the transfer arm 233A is formed in a fork shape that is divided into two forks, similarly to the first holder 123A, in order to reduce costs.

The transfer arm 233 A can deliver the substrate 10 to be processed to the laser processing apparatus 210 as well as the carry-in / out station 100 A and the thinning apparatus 220. The transfer arm 233 A can also deliver the support substrate 20 to the laser processing apparatus 210. Further, the transfer arm 233 A can also deliver the superposed substrate 30 to the laser processing apparatus 210.

The first processing station 200A has a pre-alignment device 240. The pre-alignment apparatus 240 includes a pre-alignment stage 241 that holds the target substrate 10 and a detector 242 that detects the center position and crystal orientation of the target substrate 10 held on the pre-alignment stage 241. The detector 242 detects the crystal orientation of the substrate to be processed 10 by detecting the position of the notch 14 (see FIG. 4) representing the crystal orientation of the substrate 10 to be processed. The detector 242 may detect the position of the orientation flat instead of detecting the position of the notch 14.

The pre-alignment stage 241 holds the substrate to be processed 10 from below with the second main surface 12 of the substrate to be processed 10 facing upward. The pre-alignment stage 241 has a circular suction surface having a diameter larger than the diameter of the substrate 10 to be processed, and sucks the substrate 10 to be processed on the suction surface. The pre-alignment stage 241 is a vacuum chuck that vacuum-sucks the substrate 10 to be processed, but may be an electrostatic chuck that electrostatically chucks the substrate 10 to be processed. The pre-alignment stage 241 holds the substrate 10 to be processed that is bonded to the support substrate 20 in advance, that is, the superposed substrate 30.

The detector 242 includes an image sensor, for example, and images the outer periphery of the substrate 10 to be processed held by the pre-alignment stage 241. In order to image a plurality of points on the outer periphery of the substrate 10 to be processed, the pre-alignment stage 241 rotates around the vertical axis. The detector 242 transmits a captured image signal to the control device 400. The control device 400 obtains the center position and crystal orientation of the substrate to be processed 10 in the coordinate system fixed to the pre-alignment stage 241 by performing image processing on the image captured by the detector 242.

The pre-alignment apparatus 240 has an attachment base 243 that is fixed to the ceiling frame 219 of the laser processing apparatus 210. A pre-alignment stage 241 is rotatably attached to the attachment base 243. In addition, a support column that supports the detector 242 is fixed to the mounting base 243.

The pre-alignment apparatus 240 is arranged on the upper part of the laser processing apparatus 210. Since the pre-alignment apparatus 240 and the laser processing apparatus 210 are stacked in the vertical direction, the substrate processing system 1A can be compared with the case where the pre-alignment apparatus 240 and the laser processing apparatus 210 are arranged in the horizontal direction. The installation area can be reduced. The pre-alignment device 240 is disposed inside the outer peripheral edge of the base frame 217 so as not to protrude from the base frame 217 of the laser processing device 210 when viewed in the vertical direction.

The first processing station 200A includes a transfer arm 260 that receives the substrate 10 to be processed from the pre-alignment apparatus 240 and transfers the received substrate 10 to the laser processing apparatus 210. The transfer arm 260 can be moved in the X-axis direction along the X-axis guide 261, and can be moved in the Z-axis direction along the Z-axis guide 262. The transport arm 260 is not movable in the Y-axis direction, but may be movable in the Y-axis direction.

The transfer arm 260 holds the target substrate 10 from above with the first main surface 11 of the target substrate 10 facing downward. The transfer arm 260 has a circular suction surface having a diameter larger than the diameter of the substrate 10 to be processed, and sucks the substrate 10 to be processed on the suction surface. The transfer arm 260 is a vacuum chuck that vacuum-sucks the substrate 10 to be processed, but may be an electrostatic chuck that electrostatically chucks the substrate 10 to be processed. The transfer arm 260 holds the substrate 10 to be processed, which is bonded to the support substrate 20 in advance, that is, the superposed substrate 30.

The transfer arm 260 transfers the substrate 10 to be processed from the pre-alignment apparatus 240 to the laser processing apparatus 210 as described above. The transfer arm 260 is used when the processing target substrate 10 is thinned after laser processing of the processing target substrate 10 (see FIG. 16). In this case, as will be described in detail later, the transfer device 230A of the first processing station 200A loads the superposed substrate 30 into the pre-alignment device 240, and then the transfer arm 260 unloads the superposed substrate 30 from the pre-alignment device 240.

In order to carry out the superposed substrate 30 from the pre-alignment apparatus 240, the transfer apparatus 230A of the first processing station 200A may be used, but in this embodiment, the transfer arm 260 is used. According to this embodiment, since the route through which the superposed substrate 30 is carried into the pre-alignment apparatus 240 is different from the route through which the superposed substrate 30 is carried out from the pre-alignment device 240, the flow of the superposed substrate 30 is congested. Can be suppressed.

In addition, the same effect is acquired also when the to-be-processed substrate 10 is not joined with the support substrate 20 previously. In this case, the transfer device 122A of the loading / unloading station 100A loads the substrate 10 to be processed into the pre-alignment device 240, and then the transfer arm 260 unloads the substrate 10 to be processed from the pre-alignment device 240. Therefore, since the path through which the substrate to be processed 10 is carried into the pre-alignment apparatus 240 is different from the path through which the substrate to be processed 10 is carried out from the pre-alignment apparatus 240, it is possible to suppress the congestion of the flow of the substrate to be processed 10. .

The transfer arm 260 may be used when the substrate to be processed 10 is returned to the carry-in / out station 100A without being thinned after the laser processing of the substrate 10 to be processed. In this case as well, it is possible to suppress the flow of the substrate 10 to be jammed. This is because the transfer device 122A of the loading / unloading station 100A loads the substrate 10 to be processed into the pre-alignment device 240, and then the transfer arm 260 unloads the substrate 10 to be processed from the pre-alignment device 240.

The transfer arm 260 is movable vertically above the moving mechanism 214 that moves the laser processing stage 211. Since the transfer arm 260 and the moving mechanism 214 of the laser processing stage 211 are stacked in the vertical direction, the transfer arm 260 and the moving mechanism 214 of the laser processing stage 211 are arranged side by side in the horizontal direction. The installation area of the substrate processing system 1A can be reduced. The transfer arm 260 moves inside the outer peripheral edge of the base frame 217 so as not to protrude from the base frame 217 of the laser processing apparatus 210 when viewed in the vertical direction.

200 A of 1st process stations apply | coat the adhesive agent 22 to the joint surface 21 joined with the to-be-processed substrate 10 of the support substrate 20, and the support substrate 20 and the to-be-processed substrate 10 through the adhesive agent 22. And a joining device 280 for joining. The coating device 270 and the bonding device 280 are arbitrary devices, and the first processing station 200A may not include the coating device 270 and the bonding device 280.

FIG. 12 is a view showing a coating apparatus according to the second embodiment. For example, the coating apparatus 270 has an adhesive on the spin chuck 271 that holds the support substrate 20 horizontally with the bonding surface 21 of the support substrate 20 facing upward, and the bonding surface 21 of the support substrate 20 held by the spin chuck 271. And an application nozzle 272 for applying 22.

The coating device 270 spreads the adhesive 22 on the bonding surface 21 of the support substrate 20 by rotating the spin chuck 271. Thereafter, the coating device 270 dries the adhesive 22. As the support substrate 20, a glass substrate is used. A semiconductor substrate may be used instead of the glass substrate. As the adhesive 22, for example, a thermoplastic resin is used.

FIG. 13 is a cross-sectional view showing a state before and after supplying compressed air to the inside of the pressure vessel of the joining device according to the second embodiment. In FIG. 13, a two-dot chain line indicates a state before the compressed air is supplied to the inside of the pressure vessel 284, and a solid line indicates a state after the compressed air is supplied to the inside of the pressure vessel 284. FIG. 14 is a cross-sectional view illustrating an example of a state in which the sealed space of the bonding apparatus indicated by the solid line in FIG. 13 is decompressed.

The bonding apparatus 280 includes, for example, an upper chuck 281 that holds the substrate 10 to be processed horizontally and a lower chuck 282 that holds the support substrate 20 horizontally. The lower chuck 282 includes a heater 283 for heating the adhesive 22 by heating the support substrate 20. The bonding apparatus 280 includes a pressure vessel 284 that is supplied with compressed air that deforms the suction surface of the upper chuck 281 that sucks the target substrate 10 into a convex shape. The pressure vessel 284 can be expanded and contracted in the vertical direction, and is made of, for example, a metal bellows.

First, as shown in FIG. 13, the bonding apparatus 280 lowers the upper chuck 281, brings the upper chuck 281 into contact with the lower chuck 282, and forms a sealed space 285 between the upper chuck 281 and the lower chuck 282. . Subsequently, the bonding apparatus 280 deforms the suction surface of the upper chuck 281 that sucks the substrate 10 to be processed downward by supplying compressed air into the pressure vessel 284. Thereby, the center part of the to-be-processed substrate 10 and the center part of the support substrate 20 are joined via the adhesive agent 22.

Next, the joining device 280 depressurizes the sealed space 285 in order to prevent air from being caught. Since the differential pressure between the sealed space 285 and the suction hole of the upper chuck 281 is reduced, the upper chuck 281 cannot vacuum-treat the substrate 10 to be processed, and the substrate 10 to be processed is protruded from the bottom as shown by a solid line in FIG. It returns to the flat state shown in FIG. At this time, the substrate to be processed 10 and the support substrate 20 are gradually joined from the center of the substrate to be processed 10 toward the outer periphery.

In addition, the coating device 270 may apply the adhesive 22 to the bonding surface to be bonded to the support substrate 20 of the substrate 10 to be processed. The bonding surface bonded to the support substrate 20 of the substrate to be processed 10 is the first main surface 11 on which a device has been formed in advance.

The coating device 270 and the joining device 280 are adjacent to the transport area 231A, respectively (see FIG. 10). The coating device 270 and the joining device 280 are disposed, for example, on the Y axis direction negative side of the transport region 231A. The transport device 230A delivers the support substrate 20 (or the substrate to be processed 10) to the coating device 270. Further, the transfer device 230 A delivers the target substrate 10 and the support substrate 20 to the bonding device 280. The work amount of the transfer device 230A can be increased, and the operating rate of the transfer device 230A can be improved.

The substrate processing system 1A (see FIGS. 10 and 11) does not include the second processing station 300 illustrated in FIG. 1, but may include the second processing station 300. The substrate processing system 1A includes a control device 400.

FIG. 15 is a flowchart showing a substrate processing method according to the second embodiment. FIG. 16 is a flowchart illustrating an example of a process performed subsequent to the process S309 in FIG. 15 when the process target substrate is thinned after the laser processing of the process target substrate. The plurality of steps shown in FIGS. 15 and 16 are performed under the control of the control device 400. The order of the plurality of steps shown in FIGS. 15 and 16 is not particularly limited. Moreover, some processes shown in FIGS. 15 and 16 may not be performed.

The substrate processing method includes a step S301 in which the first holder 123A takes out the substrate 10 to be processed from the cassette 101A placed on the cassette stand 110A and transports the taken out substrate 10 to the first processing station 200A. The substrate processing method includes step S302 in which the transfer arm 233A receives the substrate 10 to be processed from the first holder 123A and transfers the received substrate 10 to the bonding apparatus 280. In parallel with these steps S301 and S302, the following steps S303 to S306 are performed. The following steps S303 to S306 may be performed by the start of the following step S307, and may not be performed in parallel with the above steps S301 and S302.

The substrate processing method includes a step S303 in which the first holder 123A takes out the support substrate 20 from the cassette 102A placed on the cassette stand 110A and transports the taken out support substrate 20 to the first processing station 200A. The substrate processing method includes step S304 in which the transport arm 233A receives the support substrate 20 from the first holder 123A and transports the received support substrate 20 to the coating apparatus 270. The substrate processing method includes a step S305 in which the coating apparatus 270 applies the adhesive 22 to the bonding surface 21 bonded to the target substrate 10 of the support substrate 20. The substrate processing method includes step S306 in which the transport arm 233A receives the support substrate 20 from the coating apparatus 270 and transports the received support substrate 20 to the bonding apparatus 280.

In step S302, the transfer arm 233A may transfer the substrate to be processed 10 to the coating apparatus 270. In this case, the transfer arm 233A transfers the support substrate 20 to the bonding apparatus 280 in step S304. In this case, the substrate processing method includes a step in which the coating apparatus 270 applies the adhesive 22 to the bonding surface to be bonded to the support substrate 20 of the substrate to be processed 10 instead of the step S305. In this case, the substrate processing method includes a step in which the transfer arm 233A receives the substrate to be processed 10 from the coating apparatus 270 and transfers the received substrate to be processed 10 to the bonding apparatus 280 instead of the step S306.

The substrate processing method includes step S307 in which the bonding apparatus 280 bonds the support substrate 20 and the substrate to be processed 10 via the adhesive 22 to produce the superposed substrate 30. In the following steps S308 to S317 after step S307, the substrate to be processed 10 is bonded to the support substrate 20 and is reinforced by the support substrate 20. Therefore, damage to the substrate 10 to be processed can be prevented.

The substrate processing method includes step S308 in which the transfer arm 233A receives the overlapped substrate 30 from the bonding apparatus 280 and transfers the received overlapped substrate 30 to the pre-alignment apparatus 240. The pre-alignment apparatus 240 receives the superposed substrate 30 from the transfer arm 233A, and holds the superposed substrate 30 received by the pre-alignment stage 241.

The substrate processing method includes step S309 in which the pre-alignment stage 241 holds the superposed substrate 30 and the detector 242 detects the center position and crystal orientation of the substrate to be processed 10 held by the pre-alignment stage 241.

The substrate processing method includes a step S310 in which the transfer arm 260 receives the overlapped substrate 30 from the pre-alignment apparatus 240 and transfers the received overlapped substrate 30 to the laser processing apparatus 210.

The substrate processing method includes step S311 in which the laser processing apparatus 210 receives the superposed substrate 30 from the transfer arm 260 and holds the received superposed substrate 30 on the laser processing stage 211.

In step S311, the pre-alignment apparatus 240 is arranged after the step S309 and before the step S310 so that the crystal orientation of the substrate 10 to be processed with respect to the laser processing stage 211 is set in advance. Rotate. In step S 311, the transfer arm 260 receives the superposed substrate 30 from the pre-alignment stage 241 so that the center position of the laser processing stage 211 matches the center position of the substrate 10 to be processed in step S 311.

The substrate processing method includes step S312 in which the laser processing apparatus 210 performs laser processing on the substrate 10 to be processed. In step S 312, the laser processing stage 211 holds the superposed substrate 30, and the laser processing head 212 collects the laser beam LB for processing the target substrate 10 on the target substrate 10 held by the laser processing stage 211. Irradiate with light.

The substrate processing method includes step S313 in which the transfer arm 233A receives the overlapped substrate 30 from the laser processing apparatus 210 and transfers the received overlapped substrate 30 to the thinning apparatus 220.

The substrate processing method includes a step S314 in which the thinning apparatus 220 receives the superposed substrate 30 and holds the superposed substrate 30 on the rotary chuck 222.

The substrate processing method includes a step S315 in which the thinning apparatus 220 thins the substrate 10 to be processed. In the step S315, the rotating chuck 222 holds the superposed substrate 30, and the rotating grindstone 224 descends while rotating to contact the substrate 10 to be processed, and the substrate 10 that rotates together with the rotating chuck 222 is ground.

The substrate processing method includes step S316 in which the transfer arm 233A receives the superposed substrate 30 from the thinning device 220 and transports the received superposed substrate 30 to the carry-in / out station 100A.

The substrate processing method includes step S317 in which the first holder 123A receives the superposed substrate 30 from the transfer arm 233A and stores the received superposed substrate 30 in the cassette 103A or the cassette 104A placed on the cassette base 110A. After step S317, the current process ends.

FIG. 17 is a flowchart illustrating an example of a process performed subsequent to step S309 in FIG. 15 when laser processing of the substrate to be processed is performed after thinning the substrate to be processed. A plurality of steps shown in FIG. 17 are performed under the control of the control device 400. Note that the order of the plurality of steps shown in FIG. 17 is not particularly limited. Moreover, some processes shown in FIG. 17 may not be performed.

The substrate processing method includes step S401 in which the transfer arm 233A receives the overlapped substrate 30 from the pre-alignment apparatus 240 and transfers the received overlapped substrate 30 to the thinning device 220.

The substrate processing method includes a step S402 in which the thinning device 220 receives the superposed substrate 30 and holds the superposed substrate 30 on the rotary chuck 222.

After the step S309 and before the step S401, the pre-alignment apparatus 240 moves the superposed substrate 30 so that the crystal orientation of the substrate 10 to be processed with respect to the rotary chuck 222 in the step S402 becomes a preset orientation. Rotate. In step S401, the transfer arm 233A receives the superposed substrate 30 from the pre-alignment stage 241 so that the center position of the rotary chuck 222 matches the center position of the substrate 10 to be processed in step S402.

The substrate processing method includes step S403 in which the thin plate apparatus 220 thins the substrate 10 to be processed. In step S 403, the rotating chuck 222 holds the superposed substrate 30, and the rotating grindstone 224 descends while rotating to contact the substrate 10 to be processed, and the substrate 10 that rotates together with the rotating chuck 222 is ground.

The substrate processing method includes a step S404 in which the transfer arm 233A receives the overlapped substrate 30 from the thinning device 220 and transfers the received overlapped substrate 30 to the laser processing apparatus 210.

The substrate processing method includes step S405 in which the laser processing apparatus 210 receives the superposed substrate 30 from the transfer arm 233A and holds the received superposed substrate 30 on the laser processing stage 211.

The substrate processing method includes step S406 in which the laser processing apparatus 210 performs laser processing on the substrate 10 to be processed. In step S 406, the laser processing stage 211 holds the superposed substrate 30, and the laser processing head 212 collects the laser beam LB for processing the target substrate 10 on the target substrate 10 held by the laser processing stage 211. Irradiate with light.

The substrate processing method includes step S407 in which the transfer arm 233A receives the overlapped substrate 30 from the laser processing apparatus 210 and transfers the received overlapped substrate 30 to the carry-in / out station 100A.

The substrate processing method includes step S408 in which the first holder 123A receives the overlapped substrate 30 from the transfer arm 233A and stores the received overlapped substrate 30 in the cassette 103A or the cassette 104A placed on the cassette stand 110A. After step S408, the current process ends.

Instead of the above steps S407 and S408, the transfer device 122A of the carry-in / out station 100A receives the superposed substrate 30 from the laser processing device 210, and the

cassette

103A or 104A on which the superposed substrate 30 is placed on the cassette stand 110A. The process of storing in may be performed.

As mentioned above, although embodiment of the substrate processing system and substrate processing method concerning this indication was described, this indication is not limited to the above-mentioned embodiment etc. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the claims. Of course, these also belong to the technical scope of the present disclosure.

The substrate processing system 1 of the first embodiment does not include the coating device 270 and the bonding device 280, but may include the coating device 270 and the bonding device 280.

The substrate processing system 1 of the first embodiment is configured so as to be able to cope with either laser processing of the substrate 10 to be processed and thinning of the substrate 10 to be processed first. It may be configured so as to be able to cope only with the case where this is performed first. For example, the substrate processing system 1 may have only one of the first transfer arm 250 and the second transfer arm 255.

The substrate processing system 1A of the second embodiment includes the coating device 270 and the bonding device 280, but may not include the coating device 270 and the bonding device 280. In the latter case, in the description of FIGS. 15 to 17, the superposed substrate 30 is replaced with the substrate 10 to be processed. In the latter case, instead of the steps S301 to S308 shown in FIG. 15, the transfer device 122A of the carry-in / out station 100A takes out the substrate 10 to be processed from the cassette 101A placed on the cassette stand 110A and takes out the processed substrate. A step of transporting the substrate 10 to the pre-alignment apparatus 240 is performed.

The substrate processing system 1A of the second embodiment is configured so as to be able to cope with either laser processing of the substrate 10 to be processed and thinning of the substrate 10 to be processed first. It may be configured so as to be able to cope only with the case where this is performed first. For example, the substrate processing system 1 A may not have the transfer arm 260 when it corresponds only to the case where the processing target substrate 10 is thinned first.

The substrate processing system 1A of the second embodiment performs both laser processing of the substrate 10 to be processed and thinning of the substrate 10 to be processed. Of these, only laser processing of the substrate 10 to be processed may be performed. The thinning device 220 may not be provided. In this case, after step S312 in FIG. 16, the substrate 10 to be processed passes through the transfer region 120A and is stored in the cassette placed on the cassette table 110A. Thereafter, the current process ends.

This application claims priority based on Japanese Patent Application No. 2018-086912 filed with the Japan Patent Office on April 27, 2018, and the entire contents of Japanese Patent Application No. 2018-086912 are incorporated herein by reference. .

DESCRIPTION OF SYMBOLS 1 Substrate processing system 10 Substrate 20 Support substrate 30 Superposition substrate 40 Protection tape 50 Adhesive tape 60 Frame 100 Loading / unloading station 200 1st processing station 210 Laser processing apparatus 220 Thin plate apparatus 230 Conveyance apparatus 232 Guide rail 233 Shuttle 234 Detector

230A Conveying device

231A Conveying region

232A Guide rail

233A Conveying arm 250 First conveying arm 255 Second conveying arm 270 Coating device 280 Joining device 310 Ultraviolet irradiation device 320 Mounting device 330 Peeling device

Claims

A loading / unloading station for loading / unloading a cassette storing a substrate to be processed;
A laser processing apparatus for performing laser processing on the substrate to be processed;
A thinning device for thinning the substrate to be processed,
The substrate processing system, wherein the thinning device and the carry-in / out station are disposed on opposite sides of the laser processing device in a horizontal direction.
The apparatus includes a transfer device that moves while holding the substrate to be processed between the carry-in / out station and the thinning device and delivers the substrate to the carry-in / out station and the thinning device. A substrate processing system according to claim 1.
3. The substrate processing system according to claim 2, wherein the transfer device has a shuttle that moves along a guide rail that is arranged vertically above the laser processing device.
4. The substrate processing system according to claim 3, wherein the transfer device has a plurality of the shuttles spaced apart in the vertical direction.
The substrate processing system according to claim 3 or 4, wherein the transfer device includes a detector that is attached to the shuttle and detects a center position and a crystal orientation of the substrate to be processed held by the shuttle.
The substrate processing system according to claim 5, further comprising a first transfer arm that receives the substrate to be processed from the shuttle to which the detector is attached and transfers the received substrate to be processed to the laser processing apparatus.
7. The substrate processing system according to claim 1, further comprising a second transfer arm that receives the substrate to be processed from the thinning device and transfers the received substrate to be processed to the laser processing apparatus.
3. The substrate processing system according to claim 2, wherein the transfer device has a transfer arm that moves along a guide rail installed in a transfer region adjacent to the laser processing apparatus in the horizontal direction.
A coating device for applying an adhesive to a bonding surface bonded to the substrate to be processed of the support substrate, or a bonding surface bonded to the support substrate of the substrate to be processed;
A bonding apparatus for bonding the support substrate and the substrate to be processed via the adhesive;
The substrate processing system according to claim 8, wherein each of the coating apparatus and the bonding apparatus is adjacent to the transfer region in a horizontal direction.
An ultraviolet irradiation device for irradiating the protective tape for protecting the substrate to be treated with ultraviolet rays;
A mounting device for mounting the substrate to be processed on a frame via an adhesive tape disposed on the opposite side of the protective tape with respect to the substrate to be processed;
10. The substrate processing system according to claim 1, further comprising a peeling device that peels off the protective tape from the substrate to be processed attached to the frame via the adhesive tape.
A process in which a laser processing apparatus performs laser processing of a substrate to be processed;
A loading / unloading station where a cassette for storing the substrate to be processed is loaded / unloaded is a step in which a thinning device disposed on the opposite side of the laser processing apparatus in the horizontal direction thins the substrate to be processed. A substrate processing method.
A transfer device that moves while holding the substrate to be processed between the loading / unloading station and the thinning device has a step of delivering the substrate to be processed to the loading / unloading station and the thinning device. Item 12. The substrate processing method according to Item 11.
The transport device has a shuttle that moves along a guide rail disposed vertically above the laser processing device,
The substrate processing method according to claim 12, wherein the shuttle has a step of receiving the substrate to be processed from the loading / unloading station and transporting the received substrate to be processed to the thinning device.
The transport device has a plurality of the shuttles spaced apart in the vertical direction,
The substrate processing method according to claim 13, further comprising a step of at least one of the shuttles receiving the substrate to be processed from the loading / unloading station and transporting the received substrate to be processed to the thinning apparatus.
15. The substrate processing method according to claim 13, wherein the detector attached to the shuttle includes a step of detecting a center position and a crystal orientation of the substrate to be processed held by the shuttle.
The substrate processing method according to claim 15, further comprising a step of transporting the substrate to be processed from the shuttle to which the detector is attached to the laser processing apparatus.
16. The substrate processing method according to claim 11, further comprising a step of transporting the substrate to be processed, which has been thinned, from the thinning device to the laser processing device.
The transfer device has a transfer arm that moves along a guide rail that is installed in a transfer region adjacent to the laser processing device in the horizontal direction,
The substrate processing method according to claim 12, wherein the transfer arm has a step of delivering the substrate to be processed to the carry-in / out station and the thinning device.
A step of applying an adhesive to a bonding surface of the supporting substrate bonded to the substrate to be processed, or a bonding surface bonded to the supporting substrate of the substrate to be processed;
The substrate processing method according to claim 18, further comprising: a bonding device adjacent to the transport region in a horizontal direction bonding the support substrate and the substrate to be processed via the adhesive.
Irradiating the protective tape for protecting the substrate to be treated with ultraviolet rays;
Attaching the substrate to be processed to the frame via an adhesive tape disposed on the opposite side of the protective tape with respect to the substrate to be processed;
The substrate processing method according to any one of claims 11 to 19, further comprising a step of peeling the protective tape from the substrate to be processed attached to the frame via the adhesive tape.