WO2019205468A1 - Oled像素结构及oled显示面板 - Google Patents

Oled像素结构及oled显示面板 Download PDF

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WO2019205468A1
WO2019205468A1 PCT/CN2018/106335 CN2018106335W WO2019205468A1 WO 2019205468 A1 WO2019205468 A1 WO 2019205468A1 CN 2018106335 W CN2018106335 W CN 2018106335W WO 2019205468 A1 WO2019205468 A1 WO 2019205468A1
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pixel
oled
pixel electrode
layer
electrode
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PCT/CN2018/106335
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French (fr)
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李秀妍
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武汉华星光电半导体显示技术有限公司
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Priority to US16/312,284 priority Critical patent/US11024686B2/en
Publication of WO2019205468A1 publication Critical patent/WO2019205468A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED pixel structure and an OLED display panel.
  • the organic light emitting diode (OLED) display device has self-luminous, low driving voltage, high luminous efficiency, short response time, high definition and contrast, near 180° viewing angle, wide temperature range, and flexible display and large-area full-color display. And many other advantages, recognized by the industry as the most promising display device.
  • the OLED display device can be divided into two types: a passive matrix OLED (PMOLED) and an active matrix OLED (AMOLED) according to the driving method.
  • the AMOLED has pixels arranged in an array. It is an active display type with high luminous efficiency and is usually used as a high-definition large-size display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an indium tin oxide (ITO) electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • ITO indium tin oxide
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
  • the electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the OLED display panel has different visual perceptions of colors at different viewing angles, mainly because of the color shift of RGB (red, green, and blue) at different viewing angles of the planar pixel design, so that the color images composed of RGB also have visual differences, and the color There is a correlation between the occurrence of the bias and the path length (optical path) of the OLED light-emitting layer and the transparent electrode layer through which the emitted light observed at different angles passes.
  • RGB red, green, and blue
  • FIG. 1 it is a schematic diagram of a conventional OLED pixel structure.
  • the OLED pixel structure mainly includes a substrate (not shown), a pixel defining layer 10 disposed on the substrate, an anode 11 disposed at the bottom of the opening region of the pixel defining layer 10, and an OLED emitting layer disposed in the opening region of the pixel defining layer 10. 12 and a cathode 13 or the like provided on the pixel defining layer 10.
  • the opening area of the pixel defining layer 10 is a through hole spaced apart from the pixel defining layer 10, and the opening area is for correspondingly forming a pixel area such as red (R), green (G), or blue (B), and the OLED light emitting layer 12 is provided.
  • the anode 11 In the open region, light can be driven by the anode 11 at the bottom of the open region and the cathode 13 provided on the pixel defining layer 10.
  • the anode 11 is a reflective electrode and the cathode 13 is a transparent electrode layer.
  • the OLED light-emitting layer 12 that emits light under voltage driving can be generally composed of a layer of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer.
  • the anode 11, the OLED light-emitting layer 12 and the cathode 13 are all planar designs, and the path length (optical path) of the OLED light-emitting layer 12 and the cathode 13 through which the light exits is L at a vertical viewing angle.
  • the viewing angle is ⁇
  • the path length (optical path) of the OLED light-emitting layer 12 and the cathode 13 through which the emitted light passes is changed to L/cos ⁇ , and the OLED passing through the observed light at different viewing angles is generated due to the color shift.
  • the light-emitting layer 12 has a correlation with the path length (optical path) of the cathode 13, so that the brightness and color have different visual perceptions at different angles.
  • Another object of the present invention is to provide an OLED display panel that reduces the difference in brightness and color observed by human eyes at different angles.
  • the present invention provides an OLED pixel structure, including: a pixel defining layer, a first pixel electrode, an OLED emitting layer, and a second pixel electrode; a bottom portion of the opening region of the pixel defining layer is a three-dimensional concave curved shape a shape, the first pixel electrode is disposed at a bottom of the corresponding opening region and has a corresponding three-dimensional concave arc shape, the OLED light emitting layer is disposed on the first pixel electrode in the corresponding opening region and has a corresponding three-dimensional concave In an arc shape, the second pixel electrode is disposed on the pixel defining layer and the portion of the second pixel electrode corresponding to the OLED light emitting layer has a corresponding three-dimensional concave arc shape.
  • the pixel defining layer is formed prior to the first pixel electrode to define a shape of the first pixel electrode through a solid concave arc shape of a bottom portion of the opening region of the pixel defining layer.
  • the first pixel electrode is an anode
  • the second pixel electrode is a cathode
  • the first pixel electrode is a cathode, and the second pixel electrode is an anode.
  • a spacer is disposed between the second pixel electrode and the pixel defining layer outside the range of the opening region.
  • the second pixel electrode is provided with an encapsulation layer.
  • the present invention also provides an OLED display panel, comprising a TFT array substrate and an OLED pixel structure disposed on the TFT array substrate;
  • the OLED pixel structure includes: a pixel defining layer, a first pixel electrode, an OLED emitting layer, and a second pixel
  • the bottom of the open area of the pixel defining layer is a three-dimensional concave curved shape
  • the first pixel electrode is disposed at the bottom of the corresponding open area and has a corresponding three-dimensional concave curved shape
  • the OLED light emitting layer is disposed correspondingly a first pixel electrode in the opening region and having a corresponding three-dimensional concave arc shape
  • the second pixel electrode is disposed on the pixel defining layer and the portion of the second pixel electrode corresponding to the OLED light emitting layer has a corresponding The three-dimensional concave curved shape.
  • the pixel defining layer of the OLED pixel structure is disposed on the flat layer of the TFT array substrate, and the plurality of through holes are disposed between the flat layer and the pixel defining layer to enable the first pixel electrode to respectively contact the TFT array substrate Internal TFT electrode.
  • the pixel defining layer is formed prior to the first pixel electrode to define a shape of the first pixel electrode through a solid concave arc shape of a bottom portion of the opening region of the pixel defining layer.
  • the TFT array substrate is a low temperature polysilicon array substrate or an IGZO (indium gallium zinc oxide) array substrate.
  • the OLED pixel structure and the OLED display panel of the present invention can reduce the difference in path length between the OLED light-emitting layer and the transparent electrode layer through which the emitted light observed at different angles is reduced, thereby reducing the observation of the human eye at different angles.
  • FIG. 1 is a schematic diagram of a conventional OLED pixel structure
  • FIG. 2 is a schematic structural view of a preferred embodiment of an OLED display panel of the present invention.
  • FIG 3 is a schematic structural view of a preferred embodiment of an OLED pixel structure of the present invention.
  • the OLED display panel includes the OLED pixel structure of the present invention.
  • the OLED display panel of the present invention mainly includes a TFT array substrate and an OLED pixel structure disposed on the TFT array substrate.
  • the OLED pixel structure mainly includes: a pixel defining layer 20, a plurality of first pixel electrodes 21, and a plurality of OLED light emitting layers 22 And the second pixel electrode 23, the first pixel electrode 21 is a reflective electrode, and the second pixel electrode 23 is a transparent electrode layer; in the preferred embodiment, the first pixel electrode 21 is an anode, and the second pixel electrode 23 is a cathode.
  • the first pixel electrode 21 is a cathode
  • the second pixel electrode 23 is an anode
  • the pixel defining layer 20 has a plurality of open regions spaced apart from each other, and the open regions are spaced apart from the pixel defining layer 20 a through hole, an opening area for correspondingly forming a pixel area such as red (R), green (G) or blue (B)
  • the first pixel electrode 21 is respectively disposed at the bottom of the open area
  • the OLED light emitting layer 22 is respectively disposed
  • the second pixel electrode 23 is disposed on the pixel defining layer 20 to cover the opening region and the non-opening region portion, so that the first pixel electrode 21 and the second pixel electrode 23 can Drive OL
  • the ED light emitting layer 22 emits light.
  • the bottom of the open area of the pixel defining layer 20 is a three-dimensional concave curved shape
  • the three-dimensional concave curved shape refers to a smooth curved surface shape, which is formed on the first pixel electrode 21 at the bottom of the open area.
  • the surface has a corresponding three-dimensional concave arc shape, and the upper and lower surfaces of the OLED light-emitting layer 22 on the first pixel electrode 21 in the opening region also have a corresponding three-dimensional concave curved shape, and the second pixel electrode 23 is fabricated.
  • the upper and lower surfaces of the portion of the second pixel electrode 23 corresponding to the OLED emitting layer 22 have a corresponding three-dimensional concave curved shape.
  • the first pixel electrode 21 is first fabricated and then the pixel defining layer 20 is formed.
  • the pixel defining layer 20 is first formed, and then the first pixel electrode 21 is formed, and the pixel defining layer 20 precedes the first pixel electrode 21
  • Forming is performed to define the shape of the first pixel electrode 21 through a solid concave curved shape of the bottom of the open area of the pixel defining layer 20.
  • the OLED light-emitting layer 22 and the second pixel electrode 23 are sequentially formed.
  • the pixel definition layer 20 is implemented using a halftone mask (HTM) or a gray dimming mask (GTM) or other exposure method.
  • the subsequent layers naturally form an arc shape along the pixel defining layer 20.
  • the invention obtains a pixel having a concave 3D concave curved shape, and the OLED light emitting layer 22 has a corresponding three-dimensional concave curved shape.
  • the present invention enables the OLED to pass through the observed light at different angles.
  • the path lengths of the light-emitting layer 22 and the second pixel electrode 23 (transparent electrode layer) are substantially the same, thereby reducing the difference in brightness and color observed by the human eye at different angles. That is, the total thickness of the OLED light-emitting layer 22 and the second pixel electrode 23 (transparent electrode layer) at substantially different angles is substantially the same.
  • the pixel defining layer 20 may be formed on the insulating layer of the outermost layer of the corresponding TFT array substrate (the flat layer 36 in the preferred embodiment), and then patterned in the pixel defining layer. Forming a plurality of through holes, that is, opening regions, respectively, thereby defining corresponding pixel regions, and forming a bottom concave curved shape of the bottom portion of the pixel defining layer 20; then forming the first pixel in the opening region respectively Electrode 21 and OLED luminescent layer 22.
  • the OLED light-emitting layer 22 can be generally composed of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, and the like, according to corresponding pixel regions such as red (R), green (G), or blue (B). Each of the OLED light emitting layers 22 can control the light emission separately.
  • a plurality of spacers (PS) 24 may be provided between the second pixel electrode 23 and the pixel defining layer 20 outside the open area.
  • An encapsulation layer 25, such as a thin film encapsulation (TPE) layer, may also be disposed on the second pixel electrode 23.
  • the OLED display panel of the present invention is formed by disposing the OLED pixel structure of the present invention on a TFT array substrate, which may be a low temperature polysilicon array substrate or an IGZO (indium gallium zinc oxide) array substrate or other types having a TFT array.
  • the substrate is described in the preferred embodiment as a low temperature polysilicon array substrate.
  • the TFT array substrate mainly includes a buffer layer 31, a semiconductor layer 32, a gate insulating layer 33, a gate layer (not shown), an interlayer insulating layer 34, and a source/drain electrode layer 35 which are sequentially formed on the substrate 30. , flat layer 36.
  • the pixel defining layer 20 of the OLED pixel structure of the present invention is disposed on the flat layer 36 of the TFT array substrate, and a plurality of through holes are formed between the flat layer 36 and the pixel defining layer 20 to enable the first pixel electrode 21 to be respectively contacted.
  • the TFT electrodes inside the TFT array substrate that is, the source/drain electrode layer 35, can respectively drive the OLED pixel structure through the TFT devices in the TFT array substrate to realize the display function.
  • FIG. 3 is a schematic structural view of a preferred embodiment of an OLED pixel structure according to the present invention.
  • the bottom of the open area of the pixel defining layer 20 is formed into a substrate design with a certain curvature.
  • the first pixel electrode 21 is formed on the bottom of the open area of the pixel defining layer 20 to form a first pixel electrode 21 with a certain curvature.
  • the OLED light-emitting layer 22 is formed on the first pixel electrode 21 to form an OLED light-emitting layer 22 with a certain curvature
  • the second pixel electrode 23 is formed on the OLED light-emitting layer 22 to form a second pixel electrode 23 with a certain curvature.
  • the present invention makes the path lengths of the OLED light-emitting layer 22 and the second pixel electrode 23 (transparent electrode layer) through which the emitted light observed at different angles is substantially the same, both of which are paths L, thereby reducing The generation of color shift.
  • the OLED pixel structure and the OLED display panel of the present invention can make the path lengths of the OLED light-emitting layer and the transparent electrode layer through which the emitted light observed at different angles are substantially the same, thereby reducing the generation of color shift.

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Abstract

一种OLED像素结构，包括：像素定义层（20），第一像素电极（21），OLED发光层（22），以及第二像素电极（23）；该像素定义层（20）的开口区的底部为立体下凹弧形形状，该第一像素电极（21）设置于对应的开口区的底部并且具有相应的立体下凹弧形形状，该OLED发光层（22）设置于对应的开口区内的第一像素电极（21）上并且具有相应的立体下凹弧形形状，该第二像素电极（23）设置于该像素定义层（20）上并且该第二像素电极（23）与该OLED发光层（22）对应的部分具有相应的立体下凹弧形形状。还提供了相应的OLED显示面板。不同角度下观察到的出射光所经过的OLED发光层（22）及第二像素电极（23）的路径长度差异减小，从而减少人眼在不同角度下观察到的亮度与颜色的差异。

Description

OLED像素结构及OLED显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED像素结构及OLED显示面板。
背景技术
有机发光二极管(OLED)显示装置具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED显示装置按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡(ITO)电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
目前的OLED显示面板，不同视角下颜色的视觉感受不同，主要因为平面像素设计不同视角下RGB(红绿蓝)存在色偏(Color Shift)，从而由RGB组成的彩色画面也存在视觉差异，色偏的产生与不同角度下观察到的出射光所经过的OLED发光层及透明电极层的路径长度(光程)存在差异有相关性。
参见图1，其为传统的OLED像素结构示意图。OLED像素结构主要包括基板(图未示)、设于基板上的像素定义层10、设于像素定义层10的开口区底部的阳极11、设于像素定义层10的开口区内的OLED发光层12以及设于像素定义层10上的阴极13等。像素定义层10的开口区为间隔设置于 像素定义层10上的通孔，开口区用于对应形成红(R)、绿(G)、或蓝(B)等像素区域，OLED发光层12设于开口区内，从而可以由开口区底部的阳极11和设于像素定义层10上的阴极13驱动发光，阳极11为反射电极，阴极13为透明电极层。在电压驱动下发光的OLED发光层12一般可由空穴注入层、空穴传输层、发光层、电子传输层及电子注入层等层叠组成。在传统的OLED像素结构中，阳极11、OLED发光层12及阴极13均为平面设计，在垂直视角下，出射光所经过的OLED发光层12与阴极13的路径长度(光程)为L，而在视角为θ时，出射光所经过的OLED发光层12与阴极13的路径长度(光程)变为L/cosθ，由于色偏的产生与不同视角下观察到的出射光所经过的OLED发光层12与阴极13的路径长度(光程)不同有相关性，从而使不同角度下亮度与颜色的视觉感受不同。
发明内容
因此，本发明的目的在于提供一种OLED像素结构，减少人眼在不同角度下观察到的亮度与颜色的差异。
本发明的另一目的在于提供一种OLED显示面板，减少人眼在不同角度下观察到的亮度与颜色的差异。
为实现上述目的，本发明提供了一种OLED像素结构，包括：像素定义层，第一像素电极，OLED发光层以及第二像素电极；该像素定义层的开口区的底部为立体下凹弧形形状，该第一像素电极设置于对应的开口区的底部并且具有相应的立体下凹弧形形状，该OLED发光层设置于对应的开口区内的第一像素电极上并且具有相应的立体下凹弧形形状，该第二像素电极设置于该像素定义层上并且该第二像素电极与该OLED发光层对应的部分具有相应的立体下凹弧形形状。
其中，该像素定义层先于该第一像素电极制备成形，以通过该像素定义层的开口区的底部的立体下凹弧形形状限定该第一像素电极的形状。
其中，该第一像素电极为阳极，该第二像素电极为阴极。
其中，该第一像素电极为阴极，该第二像素电极为阳极。
其中，该第二像素电极与像素定义层之间在该开口区范围以外设有隔垫物。
其中，该第二像素电极上设有封装层。
本发明还提供了一种OLED显示面板，包括TFT阵列基板和设置于该TFT阵列基板上的OLED像素结构；该OLED像素结构包括：像素定义层，第一像素电极，OLED发光层以及第二像素电极；该像素定义层的开口区 的底部为立体下凹弧形形状，该第一像素电极设置于对应的开口区的底部并且具有相应的立体下凹弧形形状，该OLED发光层设置于对应的开口区内的第一像素电极上并且具有相应的立体下凹弧形形状，该第二像素电极设置于该像素定义层上并且该第二像素电极与该OLED发光层对应的部分具有相应的立体下凹弧形形状。
其中，该OLED像素结构的像素定义层设置于该TFT阵列基板的平坦层上，该平坦层与像素定义层之间设有多个通孔以使该第一像素电极能够分别接触该TFT阵列基板内部的TFT电极。
其中，该像素定义层先于该第一像素电极制备成形，以通过该像素定义层的开口区的底部的立体下凹弧形形状限定该第一像素电极的形状。
其中，该TFT阵列基板为低温多晶硅阵列基板或IGZO(铟镓锌氧化物)阵列基板。
综上，本发明的OLED像素结构及OLED显示面板能够使不同角度下观察到的出射光所经过的OLED发光层及透明电极层的路径长度差异减小，从而减少人眼在不同角度下观察到的亮度与颜色的差异。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为传统的OLED像素结构示意图；
图2为本发明OLED显示面板一较佳实施例的结构示意图；
图3为本发明OLED像素结构一较佳实施例的结构示意图。
具体实施方式
参见图2，其为本发明OLED显示面板一较佳实施例的结构示意图，该OLED显示面板包含了本发明的OLED像素结构。本发明的OLED显示面板主要包括TFT阵列基板和设置于该TFT阵列基板上的OLED像素结构；该OLED像素结构主要包括：像素定义层20，多个第一像素电极21，多个OLED发光层22以及第二像素电极23，第一像素电极21为反射电极，第二像素电极23为透明电极层；在此较佳实施例中，第一像素电极21为阳极，第二像素电极23为阴极，在其它实施例中，也可以是第一像素电极21为阴极，第二像素电极23为阳极；该像素定义层20具有相互间隔的多个开口区，开口区为间隔设置于像素定义层20上的通孔，开口区用于对应形 成红(R)、绿(G)或蓝(B)等像素区域，该第一像素电极21分别设置于该开口区的底部，该OLED发光层22分别设置于该开口区内的第一像素电极21上，该第二像素电极23设置于该像素定义层20上，覆盖开口区和非开口区部分，从而第一像素电极21和第二像素电极23可以驱动OLED发光层22发光。
本发明中，像素定义层20的开口区的底部为立体下凹弧形形状，立体下凹弧形形状指类似平滑的曲面形状，制作于该开口区的底部的第一像素电极21上、下表面具有相应的立体下凹弧形形状，制作于该开口区内的第一像素电极21上的OLED发光层22上、下表面也具有相应的立体下凹弧形形状，第二像素电极23制作于像素定义层20上，并且该第二像素电极23与该OLED发光层22对应的部分的上、下表面具有相应的立体下凹弧形形状。不同于传统制程中先制作第一像素电21再制作像素定义层20，本发明制程顺序先制作像素定义层20，再制作第一像素电极21，像素定义层20先于该第一像素电极21制备成形，以通过该像素定义层20的开口区的底部的立体下凹弧形形状限定该第一像素电极21的形状。然后再顺序制作OLED发光层22和第二像素电极23。像素定义层20使用半色调光罩(HTM)或灰色调光罩(GTM)或其他曝光方式实现，像素定义层20的弧形形成后，后续的各层沿像素定义层20自然形成弧形形状。本发明得到具有立体3D下凹弧形形状的像素，OLED发光层22具有相应的立体下凹弧形形状，与现有技术相比，本发明使不同角度下观察到的出射光所经过的OLED发光层22及第二像素电极23(透明电极层)的路径长度大体上相同，从而减少人眼在不同角度下观察到的亮度与颜色的差异。也就是不同角度下OLED发光层22及第二像素电极23(透明电极层)的总厚度大体上相同。
制作本发明的OLED像素结构时，可以先在相应的TFT阵列基板最外层的绝缘层(此较佳实施例中为平坦层36)上形成像素定义层20，然后图形化，在像素定义层20上形成数个通孔，即开口区，从而分别限定出相应的像素区域，并且使像素定义层20的开口区的底部形成立体下凹弧形形状；然后分别在开口区内制作第一像素电极21和OLED发光层22。
OLED发光层22一般可由空穴注入层、空穴传输层、发光层、电子传输层及电子注入层等层叠组成，根据对应的红(R)、绿(G)或蓝(B)等像素区域，各个OLED发光层22可以分别控制发光。第二像素电极23与像素定义层20之间在开口区范围以外还可以设有多个隔垫物(PS)24。第二像素电极23上还可以设有封装层25，例如薄膜封装(TPE)层。
通过将本发明的OLED像素结构设置于一TFT阵列基板上组成本发明 的OLED显示面板，该TFT阵列基板可以为低温多晶硅阵列基板或IGZO(铟镓锌氧化物)阵列基板或其他类型具有TFT阵列的基板，在此较佳实施例中以低温多晶硅阵列基板为例进行说明。该TFT阵列基板主要包括在基板30上依次形成的缓冲(Buffer)层31，半导体层32，栅极绝缘层33，栅极层(图未示)，层间绝缘层34，源漏电极层35，平坦层36。
本发明的OLED像素结构的像素定义层20设置于TFT阵列基板的平坦层36上，该平坦层36与像素定义层20之间设有多个通孔以使该第一像素电极21能够分别接触该TFT阵列基板内部的TFT电极，即源漏电极层35，从而可以通过TFT阵列基板中的TFT器件来分别驱动OLED像素结构，实现显示功能。
参见图3，其为本发明OLED像素结构一较佳实施例的结构示意图。像素定义层20的开口区底部制作成带有一定弧度的衬底设计，将第一像素电极21制作在像素定义层20开口区底部之上，形成带有一定弧度的第一像素电极21，将OLED发光层22制作在第一像素电极21之上，形成带有一定弧度的OLED发光层22,第二像素电极23制作在OLED发光层22上，形成带有一定弧度的第二像素电极23，从而得到具有立体3D下凹弧形形状的像素。与现有技术相比，本发明使不同角度下观察到的出射光所经过的OLED发光层22及第二像素电极23(透明电极层)的路径长度大体上相同，均为路径L，从而减少色偏的产生。
综上，本发明的OLED像素结构及OLED显示面板能够使不同角度下观察到的出射光所经过的OLED发光层及透明电极层的路径长度大体上相同，从而减少色偏的产生。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

  1. 一种OLED像素结构，包括：像素定义层，第一像素电极，OLED发光层，以及第二像素电极；该像素定义层的开口区的底部为立体下凹弧形形状，该第一像素电极设置于对应的开口区的底部并且具有相应的立体下凹弧形形状，该OLED发光层设置于对应的开口区内的第一像素电极上并且具有相应的立体下凹弧形形状，该第二像素电极设置于该像素定义层上并且该第二像素电极与该OLED发光层对应的部分具有相应的立体下凹弧形形状。
  2. 如权利要求1所述的OLED像素结构，其中，该像素定义层先于该第一像素电极制备成形，以通过该像素定义层的开口区的底部的立体下凹弧形形状限定该第一像素电极的形状。
  3. 如权利要求1所述的OLED像素结构，其中，该第一像素电极为阳极，该第二像素电极为阴极。
  4. 如权利要求1所述的OLED像素结构，其中，该第一像素电极为阴极，该第二像素电极为阳极。
  5. 如权利要求1所述的OLED像素结构，其中，该第二像素电极与像素定义层之间在该开口区范围以外设有隔垫物。
  6. 如权利要求1所述的OLED像素结构，其中，该第二像素电极上设有封装层。
  7. 一种OLED显示面板，包括TFT阵列基板和设置于该TFT阵列基板上的OLED像素结构；该OLED像素结构包括：像素定义层，第一像素电极，OLED发光层，以及第二像素电极；该像素定义层的开口区的底部为立体下凹弧形形状，该第一像素电极设置于对应的开口区的底部并且具有相应的立体下凹弧形形状，该OLED发光层设置于对应的开口区内的第一像素电极上并且具有相应的立体下凹弧形形状，该第二像素电极设置于该像素定义层上并且该第二像素电极与该OLED发光层对应的部分具有相应的立体下凹弧形形状。
  8. 如权利要求7所述的OLED显示面板，其中，该OLED像素结构的像素定义层设置于该TFT阵列基板的平坦层上，该平坦层与像素定义层之间设有多个通孔以使该第一像素电极能够分别接触该TFT阵列基板内部的TFT电极。
  9. 如权利要求7所述的OLED显示面板，其中，该像素定义层先于该 第一像素电极制备成形，以通过该像素定义层的开口区的底部的立体下凹弧形形状限定该第一像素电极的形状。
  10. 如权利要求7所述的OLED显示面板，其中，该TFT阵列基板为低温多晶硅阵列基板或IGZO阵列基板。
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