WO2019196600A1 - Chip and communication device - Google Patents

Chip and communication device Download PDF

Info

Publication number
WO2019196600A1
WO2019196600A1 PCT/CN2019/078567 CN2019078567W WO2019196600A1 WO 2019196600 A1 WO2019196600 A1 WO 2019196600A1 CN 2019078567 W CN2019078567 W CN 2019078567W WO 2019196600 A1 WO2019196600 A1 WO 2019196600A1
Authority
WO
WIPO (PCT)
Prior art keywords
solder ball
inductor
conductive portion
chip
width
Prior art date
Application number
PCT/CN2019/078567
Other languages
French (fr)
Chinese (zh)
Inventor
刘宁
陈钊
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Publication of WO2019196600A1 publication Critical patent/WO2019196600A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10Inductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32104Disposition relative to the bonding area, e.g. bond pad
    • H01L2224/32105Disposition relative to the bonding area, e.g. bond pad the layer connector connecting bonding areas being not aligned with respect to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32104Disposition relative to the bonding area, e.g. bond pad
    • H01L2224/32106Disposition relative to the bonding area, e.g. bond pad the layer connector connecting one bonding area to at least two respective bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83104Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus by applying pressure, e.g. by injection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/16251Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Definitions

  • the present application relates to the field of integrated circuits, and in particular, to a chip and communication device for preventing crosstalk.
  • integrated circuits also known as integrated circuits
  • ICs integrated circuits
  • the coupling between two adjacent inductor coils is mainly magnetic field coupling: when one of the coils (exciting coils) passes an alternating current, the coil forms an alternating magnetic field around the excitation coil, and the magnetic field of the alternating magnetic field When the wire passes through the other coil (the disturbed coil), the induced current is formed in the disturbed coil due to the change of the magnetic flux surrounded by the disturbed coil, which is crosstalk. Crosstalk is particularly noticeable due to the small spacing between the excitation coil and the victim coil.
  • the application provides a chip and a communication device.
  • the present application provides a chip.
  • the chip includes a substrate, a bare chip, and a solder ball group soldered between the substrate and the bare chip.
  • the set of solder balls includes a first solder ball and a second solder ball that are spaced apart. There is a gap between the first solder ball and the second solder ball, and the gap may be filled with a colloid or other adhesive.
  • the bare chip is provided with a first conductive portion connected to the first solder ball and the second solder ball. A second conductive portion connected to the first solder ball and the second solder ball is disposed on the substrate.
  • the first solder ball, the first conductive portion, the second solder ball, and the second conductive portion form a closed loop.
  • the bare chip further includes two inductors distributed on both sides of the closed loop.
  • the other inductor when one of the two inductors is an excitation coil, the other inductor is a victim coil, and the excitation coil and the victim coil are respectively located on both sides of the closed loop, and utilize Faraday's law of electromagnetic induction, when the magnetic field lines of the excitation coil pass through the closed loop, an induced current is induced in the closed loop, thereby canceling the magnetic lines of force passing through the closed loop, so that the disturbed coil passes through The magnetic field lines are reduced, so that the degree of coupling between the excitation coil and the victim coil is reduced, and the isolation is improved.
  • the closed loop can effectively isolate the two inductors, so the two inductors can be lowered by the closed loop The degree of coupling, thereby improving the crosstalk between the two inductors.
  • the chip forms the first conductive portion by using a metal trace in the bare chip, and forms the first solder ball and the second solder ball by using the solder ball group in a chip package structure, and utilizes
  • the encapsulating metal layer on the substrate forms the second conductive portion, so the closed loop can fully utilize the package structure of the chip, improve utilization of the chip package structure, and thereby reduce the isolation ring the cost of.
  • the first conductive portion is formed because the closed loop of the chip is formed by sequentially connecting the first solder ball, the first conductive portion, the second solder ball, and the second conductive portion. Formed on the bare chip, the second conductive portion is formed on the substrate, and the first solder ball and the second solder ball are connected between the bare chip and the substrate, so The closed loop is a three-dimensional closed loop with respect to the bare chip.
  • the closed loop Since the two inductors are respectively located on two sides of the closed loop, that is, the closed loop is only disposed on a necessary path in which the magnetic lines of the two inductors are coupled to each other, the closed loop does not The lines of magnetic force in other orientations of the two inductors produce a weakening effect, so the inductance and Q value of the closed loop to the two inductors (also called the quality factor of the inductor) refers to the exchange of the inductor at a certain frequency. The effect of the inductive reactance and its equivalent loss resistance when operating at voltage is very small. In short, the closed loop can reduce the degree of coupling between the two inductors without reducing the inductance and Q of the two inductors to improve the relationship between the two inductors. Crosstalk.
  • the closed loop is grounded.
  • the closed loop can also be left floating, that is, the closed loop is not connected to other circuits.
  • the bare chip has a connection surface toward the substrate.
  • the line connecting the center points of the two inductors is the first connection.
  • a line connecting the center point of the first solder ball and the center point of the second solder ball is a second line.
  • An orthographic projection of the first line on the connecting surface intersects an orthographic projection of the second line on the connecting surface.
  • the closed loop is located in a middle area between the first inductor and the second inductor, and the closed loop can cancel more magnetic lines of force, and the isolation is higher.
  • the first connection may pass through the closed loop to better isolate the closed loop.
  • the orthographic projection of the first line on the connecting surface passes through the center of the orthographic projection of the second line on the connecting surface.
  • the closed loop is located in a middle area between the first inductor and the second inductor, and the closed loop has better isolation effect.
  • the orthographic projection of the first line on the connecting surface is perpendicular to the orthographic projection of the second line on the connecting surface.
  • the first inductor and the second inductor are arranged substantially symmetrically on both sides of the closed loop, so that the closed loop can cancel more magnetic lines of force, the isolation is higher, and The inductance of the first inductance and the second inductance and the Q value are less affected.
  • the first solder ball and the second solder ball are arranged in a first direction.
  • the distance between the first solder ball and the second solder ball is a first length.
  • the spacing between the first solder ball and the second solder ball is a minimum distance between an outer contour of the first solder ball and an outer contour of the second solder ball.
  • the two inductors are a first inductor and a second inductor.
  • the length of the first inductor in the first direction is a second length.
  • the length of the second inductor in the first direction is a third length.
  • the second length is greater than or equal to the third length.
  • the ratio of the first length to the second length is in the range of 0.75 to 1.25.
  • the ratio of the first length to the second length is in the range of 0.75 to 1.25, that is, the length of the closed loop and the longer length of the two inductors When the length is similar, the closed loop has better isolation effect, and can effectively isolate the two inductors.
  • the first length is equal to the second length.
  • the length of the closed loop is equal to the length of the longer length of the two inductors, and the closed loop can better reduce the relationship between the first inductor and the second inductor The degree of coupling, the isolation of the closed loop is good.
  • the first conductive portion has a strip shape, and the extending direction of the first conductive portion is consistent with the first direction.
  • the first conductive portion may be a metal trace formed in the bare chip. Since the extending direction of the first conductive portion is consistent with the first direction, the length of the first conductive portion is short, and the resistance of the first conductive portion is small, which is favorable for improving the sensitivity of the closed loop. The isolation effect of the closed loop is better.
  • the first solder ball has a first width in a second direction, the second direction being parallel to the bare chip and perpendicular to the first direction.
  • the width of the second solder ball in the second direction is equal to the first width.
  • the first conductive portion has a second width in the second direction.
  • the ratio of the second width to the first width is greater than or equal to 0.75.
  • the outer contour of the first solder ball is the same as or very similar to the outer contour of the second solder ball.
  • the width of the second solder ball in the second direction is also considered when the width of the second solder ball in the second direction is slightly different from the first width due to an error in manufacturing process. Equal to the first width.
  • the second solder ball when the ratio of the second width to the first width is greater than or equal to 0.75, that is, the width of the first conductive portion and the width of the first solder ball, the second solder ball When the width is similar, the closed loop has better isolation effect, and can effectively isolate the two inductors.
  • the second width is equal to the first width.
  • the width of the first conductive portion is the same as the width of the first solder ball and the width of the second solder ball, which can save the material of the first conductive portion, and the closed loop is also The degree of coupling between the first inductance and the second inductance can be well reduced, and the isolation effect of the closed loop is good.
  • the second conductive portion has a strip shape.
  • the extending direction of the second conductive portion is consistent with the first direction.
  • the second conductive portion may be a metal trace formed in the substrate. Since the extending direction of the second conductive portion is consistent with the first direction, the second conductive portion has a short length, and the second conductive portion has a small resistance, which is also advantageous for improving the sensitivity of the closed loop. The degree of isolation of the closed loop is better.
  • the second conductive portion has a third width in the second direction, and the third width is greater than or equal to the second width.
  • the third width is equal to the second width.
  • the solder ball set further includes a third solder ball.
  • the third solder ball is arranged in the same direction as the first solder ball and the second solder ball, and the third solder ball is located between the first solder ball and the second solder ball .
  • the third solder ball connects the first conductive portion and the second conductive portion.
  • the first solder ball, the second solder ball, and the third solder ball are connected between the first conductive portion and the second conductive portion, so the closed loop A plurality of parallel small loops are formed in the road, so that the isolation effect of the closed loop is better.
  • the first inductor includes an upper layer inductor, a lower layer inductor, and a plurality of conductive pillars.
  • the upper layer inductor is stacked and spaced apart from the lower layer inductor, and the plurality of conductive pillars are connected between the upper layer inductor and the lower layer inductor.
  • the first inductor has a large thickness, thereby increasing the Q value of the first inductor.
  • the upper layer inductor or the lower layer inductor is disposed in the same layer as the first conductive portion.
  • the preparation process of the first inductor and the first conductive portion is integrated in the molding process of the bare chip, and the first conductive portion can be synchronously formed in the manufacturing process of the first inductor.
  • the manufacturing process of the bare chip is simplified, and the cost of the bare chip is reduced.
  • the present application provides a communication device.
  • the communication device includes a housing, a circuit board, and a chip.
  • the chip employs the chip described in the above embodiments.
  • the circuit board is housed inside the housing.
  • the chip is fixed to the circuit board and electrically connected to the circuit board. Since the chip can improve the crosstalk problem between adjacent inductors, the chip can process and transmit signals with higher quality, and thus the performance of the communication device to which the chip is applied is better.
  • FIG. 1 is a schematic structural diagram of an optional chip provided by an embodiment of the present application.
  • FIG. 2 is an enlarged schematic view showing the structure of the chip A of Figure 1;
  • FIG. 3 is a schematic perspective view showing an embodiment of two inductors and a closed loop of the chip shown in FIG. 1;
  • FIG. 5 is a graph showing the relationship between the inductance and the frequency of a possible chip and the existing chip obtained based on the solution of the present application.
  • FIG. 6 is a graph showing a relationship between a possible chip and a Q value and a frequency of a conventional chip obtained based on the solution of the present application;
  • Figure 7 is a partial structural view of the structure shown in Figure 2 taken along line B-B;
  • FIG. 8 is a schematic perspective view showing another embodiment of two inductors and a closed loop of the chip shown in FIG. 1;
  • FIG. 9 is a schematic structural view of the first inductor of FIG. 2;
  • FIG. 10 is a schematic structural diagram of a communication device according to an embodiment of the present disclosure.
  • FIG. 11 is a schematic view showing a positional relationship of a partial projection of a portion of the chip shown in FIG. 1 on a connection surface of a bare chip;
  • FIG. 12 is another schematic diagram showing the positional relationship of the partial structure of the chip shown in FIG. 1 on the connection surface of the bare chip.
  • the present application provides a chip 100.
  • the chip 100 includes a substrate 1 , a bare chip 2 , and a solder ball group 3 soldered between the substrate 1 and the bare chip 2 .
  • the solder ball set 3 includes a first solder ball 31 and a second solder ball 32 which are spaced apart. There is a gap between the first solder ball 31 and the second solder ball 32, and the gap may be filled with a colloid or other adhesive.
  • the bare chip 2 is provided with a first conductive portion 21 connecting the first solder ball 31 and the second solder ball 32.
  • a second conductive portion 11 connecting the first solder ball 31 and the second solder ball 32 is disposed on the substrate 1 .
  • the first solder ball 31, the first conductive portion 21, the second solder ball 32, and the second conductive portion 11 form a closed loop 10.
  • the bare chip 2 further includes two inductors (22, 23) distributed on both sides of the closed loop 10.
  • the other inductor is a victim coil
  • the excitation coil and the victim coil are respectively located in the closed loop
  • Faraday's law of electromagnetic induction when the magnetic field lines of the excitation coil pass through the closed loop 10, an induced current is induced in the closed loop 10, thereby canceling through the closed loop 10
  • the magnetic lines of force so that the lines of magnetic force passing through the disturbed coil are reduced, so that the degree of coupling between the exciting coil and the disturbed coil is reduced, and the isolation is improved.
  • the closed loop 10 can effectively isolate the two inductors (22, 23), thus the two The inductors (22, 23) can utilize the closed loop 10 to reduce the degree of coupling between each other, thereby improving crosstalk between the two inductors (22, 23).
  • the chip 100 forms the first conductive portion 21 by using metal traces in the bare chip 2, and is formed by using the solder ball group 3 in the package structure of the chip 100.
  • the first solder ball 31 and the second solder ball 32 form the second conductive portion 11 by using a package metal layer on the substrate 1 , so the closed loop 10 can fully utilize the chip 100
  • the package structure improves the utilization of the package structure of the chip 100, thereby reducing the cost of the closed loop 10 as an isolation ring.
  • MEMS micro-electro-mechanical system
  • an advanced micro-electro-mechanical system (MEMS) processing technology can also be used to construct a three-dimensional isolation ring with a closed loop, which can also improve the inductance. The effect of isolation between the two.
  • MEMS micro-electro-mechanical system
  • the closed loop 10 of the chip 100 is composed of the first solder ball 31, the first conductive portion 21, the second solder ball 32, and the The second conductive portion 11 is formed by sequentially connecting, the first conductive portion 21 is formed on the bare chip 2, the second conductive portion 11 is formed on the substrate 1, the first solder ball 31 and The second solder ball 32 is connected between the bare chip 2 and the substrate 1 , so the closed loop 10 is a three-dimensional closed loop with respect to the bare chip 2 . Since the two inductors (22, 23) are respectively located on both sides of the closed loop 10, that is, the closed loop 10 is only required to be coupled to the magnetic lines of the two inductors (22, 23).
  • the closed loop 10 does not attenuate magnetic lines of force in other orientations of the two inductors (22, 23) over the path, so the closed loop 10 pairs the two inductors (22, 23)
  • the inductance and Q value also called the quality factor of the inductor, which is the ratio of the inductive reactance to its equivalent loss resistance when the inductor operates at an AC voltage of a certain frequency
  • FIG. 4 is a graph showing the relationship between isolation and frequency of a possible chip 100 obtained according to the solution of the present application in comparison with the existing chip.
  • the abscissa indicates the frequency (Frequency), and the unit is GHz (gih); the ordinate indicates the isolation (Isolation), and the unit is dB.
  • the curve C1 represents the relationship between the isolation and the frequency between the two inductors in the existing chip without the isolation structure.
  • the m1 point of the curve C1 represents the isolation between the two inductors at a frequency of 10 GHz of 59.68 dB.
  • the curve C2 represents the relationship between the isolation and the frequency between the two inductors (22, 23) disposed on both sides of the closed loop 10 in the chip 100 of the present application, and the m2 point of the curve C2 represents a frequency of 10 GHz.
  • the isolation between the two inductors (22, 23) is 70.53 dB. From the comparison of the m2 value and the m1 value (the numerical difference is large), the comparison of the curve C2 and the curve C1 (the curve is clearly separated and the spacing is large), the present application is provided on both sides of the closed loop 10
  • the isolation between the two inductors (22, 23) is significantly higher than the isolation between the two inductors without the isolation structure.
  • FIG. 5 is a graph showing the relationship between the inductance and the frequency of a possible chip and an existing chip based on the solution of the present application.
  • the abscissa indicates the frequency (Frequency), and the unit is GHz (gih); the ordinate indicates the inductance (Inductance), and the unit is nH (nahen).
  • the curve D1 represents the relationship between the inductance and the frequency of the two inductors in the existing chip in which the isolation structure is not provided.
  • the m1 point represents a frequency of 10 GHz, and the inductance of the two inductors is 0.1882 nH.
  • the curve D2 represents the relationship between the inductance and the frequency of the two inductors (22, 23) disposed on both sides of the closed loop 10 in the chip 100 of the present application, and the m2 point in the curve D2 represents a frequency of 10 GHz.
  • the inductance of the two inductors (22, 23) is 0.1875 nH.
  • FIG. 6 is a graph showing the relationship between the Q value and the frequency of a possible chip 100 and a conventional chip obtained based on the solution of the present application.
  • the abscissa indicates the frequency (Frequency), and the unit is GHz (gih); the ordinate indicates the Q value (Q factor).
  • the curve E1 represents the relationship between the inductance and the frequency of the two inductors in the existing chip without the isolation structure. When the m1 point in the curve E1 represents the frequency of 10 GHz, the Q value of the two inductors is 28.28.
  • the curve E2 represents the relationship between the inductance and the frequency of the two inductors (22, 23) disposed on both sides of the closed loop 10 in the chip 100 of the present application, and the m2 point in the curve E2 represents a frequency of 10 GHz.
  • the Q of the two inductors (22, 23) is 28.15.
  • the present application sets the two inductances on both sides of the closed loop 10 (22, The Q value of 23) is not much different from the Q value of the two inductors in which the isolation structure is not provided, and the closed loop 10 described in the present application has almost no influence on the Q value.
  • the closed loop 10 is capable of reducing the degree of coupling between the two inductors (22, 23) without reducing the inductance and Q of the two inductors (22, 23). To improve the crosstalk between the two inductors (22, 23).
  • the closed loop 10 is grounded.
  • the closed loop 10 can also be suspended, that is, the closed loop 10 is not connected to other circuits.
  • the two inductors (22, 23) are the first inductor 22 and the second inductor 23. It can be understood that when the first inductor 22 is an excitation coil, the second inductor 23 passively becomes a victim coil; when the second inductor 23 is an excitation coil, the first inductor 22 Passively become a victim coil.
  • the first inductor 22 and the second inductor 23 are both in an active state, the first inductor 22 is both an excitation coil and a victim coil that may be interfered by the second inductor 23; the second inductor 23 is both an excitation coil and a victim coil that may be interfered by the first inductance 22.
  • the chip 100 can be used as a networking processor.
  • the chip 100 is a microprocessor that provides for transmitting and receiving data logic (including sound and video) in a communication network.
  • the chip 100 can be used in an Industrial Communication Device (ICD).
  • ICD Industrial Communication Device
  • the communication device includes, but is not limited to, a mobile phone, a tablet computer, a communication base station, and the like.
  • the two inductors (22, 23) can be applied to a circuit for configuring a radio frequency signal.
  • the radio frequency signal may include, but is not limited to, a Wireless-Fidelity (Wi-Fi) signal, a Bluetooth signal, a Global Navigation Satellite System (GNSS) signal, and 2G (2-Generation wireless telephone technology, 2nd). Generation of wireless communication technology) signal, 3G (3-Generation wireless telephone technology) signal, 4G (4-Generation wireless telephone technology) signal or 5G (5-Generation wireless telephone) Technology, the fifth generation of wireless communication technology) signals.
  • the circuit can be a tank circuit, an oscillator circuit, a resonant circuit, or any other type of circuit in which signal coupling is a concern.
  • the first inductor 22 and the second inductor 23 can be applied to different positions in the same circuit, and can also be applied to different circuits.
  • the signal configured by the circuit including the first inductor 22 and the signal configured by the circuit including the second inductor 23 may be the same or different, may cooperate with each other, or may be independent of each other. work.
  • the chip 100 further includes a cover 4 .
  • the cover 4 is disposed on a side of the bare chip 2 away from the substrate 1 .
  • the cover 4 is covered with the substrate 1 to surround the receiving space 40.
  • the bare chip is received in the receiving space 40.
  • the cover 4 may be made of a metal material to achieve electromagnetic shielding.
  • the cover 4 and the bare chip 3 are fixed by the first colloid 5 .
  • a second colloid 6 is further disposed between the bare chip 3 and the substrate 1.
  • the second colloid 6 is formed by an underfill method such as a "non-contact jet type" dispensing method.
  • the second colloid 6 surrounds the solder ball set 3.
  • the chip 100 also includes a Ball Grid Array (BGA) 7.
  • the ball grid array 7 is formed on a side of the substrate 1 away from the bare chip.
  • BGA Ball Grid Array
  • the bare chip 2 includes a substrate and a circuit trace layer formed on the substrate.
  • the first inductor 22, the second inductor 23, and the first conductive portion 21 are formed in the circuit trace layer.
  • a solder resist layer is laid on a side of the circuit trace layer toward the substrate 1.
  • the first conductive portion 21 is formed in a surface trace layer closest to the solder resist layer, and the solder resist layer is fenestrated to a portion of the first conductive portion 21, Forming a partial region of the first conductor portion 21 through the fenestration to form a pad, and the first solder ball 31 and the second solder ball 32 are connected to the corresponding pad, thereby being connected to the first conductive portion 21 connections.
  • the first conductive portion 21 is formed in an inner wiring layer away from the solder resist layer, and a pad is disposed in a surface trace layer adjacent to the solder resist layer, and the pad is
  • the first conductor portions 21 are connected by a plurality of connection holes (with a conductive material), and the solder resist layer is disposed to be hollowed out to the area of the pads, so that the first solder balls 31 and the second solder are The ball 32 can be connected to the first conductor portion 21 by connecting corresponding pads.
  • the substrate 1 is a circuit board.
  • the substrate 1 includes a laminated multilayer conductor layer.
  • the substrate 1 is coated with an insulating protective layer on one side of the bare chip 2 .
  • the second conductive portion 11 is formed in a surface conductor layer closest to the protective layer, and the protective layer is fenestrated to a partial region of the second conductive portion 11 such that the A portion of the second conductive portion 11 is exposed through the fenestration to form a pad, and the first solder ball 31 and the second solder ball 32 are connected to the corresponding pad to be connected to the second conductive portion 11.
  • the second conductive portion 11 is formed in an inner conductor layer away from the protective layer, and a pad, a pad and the second are disposed in a surface conductor layer adjacent to the protective layer.
  • the conductive portions 11 are connected by a plurality of through holes (with a conductive material), and the protective layer is hollowed out to the area of the pads so that the first solder balls 31 and the second solder balls 32 can be connected A corresponding pad is connected to the second conductive portion 11.
  • the solder ball group 3 can be made of tin material.
  • the solder ball group 3 may employ a tin alloy including at least one of a copper element or an aluminum element.
  • the bare chip 2 has a connection surface 24 facing the substrate 1.
  • the line connecting the center points of the two inductors (22, 23) is the first line 20.
  • a line connecting the center point of the first solder ball 31 and the center point of the second solder ball 32 is a second connection line 30.
  • the orthographic projection of the first line 20 on the attachment surface 24 intersects the orthographic projection of the second line 30 on the attachment surface 24.
  • the closed loop 10 is located in a middle area between the first inductor 22 and the second inductor 23, and the closed loop 10 can cancel more magnetic lines of force, and the isolation is higher.
  • first connection 20 can pass through the closed loop 10 to better isolate the closed loop 10.
  • the orthographic projection of the first wire 20 on the attachment surface 24 passes through the center of the orthographic projection of the second wire 30 on the attachment surface 24.
  • the closed loop 10 is located in a middle area between the first inductor 22 and the second inductor 23, and the closed loop 10 has a better isolation effect.
  • the orthographic projection of the first connection 20 on the connecting surface 24 and the orthographic projection of the second connection 30 on the connecting surface 24 are not intersect.
  • the closed loop 10 is located at a region between the first inductor 22 and the second inductor 23, and the closed loop 10 can cancel the magnetic lines of force of the magnetic lines of force and the isolation effect is poor.
  • the orthographic projection of the first connection 20 on the connecting surface 24 is perpendicular to the second connection 30 on the connecting surface 24 .
  • the first inductor 22 and the second inductor 23 are arranged substantially symmetrically on both sides of the closed loop 10, so that the closed loop 10 can cancel more magnetic lines of force and have higher isolation.
  • the inductance and the Q value of the first inductor 22 and the second inductor 23 are less affected.
  • the first solder ball 31 and the second solder ball 32 are arranged along the first direction X.
  • the distance between the first solder ball 31 and the second solder ball 32 is a first length L1.
  • the spacing between the first solder ball 31 and the second solder ball 32 is the minimum distance between the outer contour of the first solder ball 31 and the outer contour of the second solder ball 32.
  • the two inductors (22, 23) are a first inductor 22 and a second inductor 23.
  • the length of the first inductor 22 in the first direction X is a second length L2.
  • the length of the second inductor 23 in the first direction X is a third length L3.
  • the second length L2 is greater than or equal to the third length L3.
  • the ratio of the first length L1 to the second length L2 is in the range of 0.75 to 1.25.
  • the closed loop 10 when the ratio of the first length L1 to the second length L2 is in the range of 0.75 to 1.25, that is, the length of the closed loop 10 and the two inductors (22, 23) When the length of the long-length inductor is about the same, the closed loop 10 has a better isolation effect, and can effectively isolate the two inductors (22, 23).
  • the first length L1 is equal to the second length L2.
  • the length of the closed loop 10 is equal to the length of the longer length of the two inductors (22, 23), and the closed loop 10 can better reduce the first inductance 22 The degree of coupling between the second inductor 23 and the closed loop 10 is good.
  • the second length L2 is 0.23 mm (mm), and the first length L1 is in the range of 0.17 mm to 0.29 mm.
  • the isolation increases with the increase of the first length L1; when the first length L1 is 0.23 mm
  • the isolation decreases with the increase of the first length L1; when the first length L1 is in the range of 0.17mm to 0.29mm, the isolation is approximately in the range of 69 to 70.5, and the isolation value is higher. high.
  • first inductor 22 and the position of the second inductor 23 are not strictly defined in the present application, and the positions of the first inductor 22 and the second inductor 23 are mutually interchangeable. .
  • the first conductive portion 21 has a strip shape, and the extending direction of the first conductive portion 21 is consistent with the first direction X.
  • the first conductive portion 21 may be a metal trace formed in the bare chip 2 . Since the extending direction of the first conductive portion 21 is consistent with the first direction X, the length of the first conductive portion 21 is short, and the resistance of the first conductive portion 21 is small, which is advantageous for improving the closed loop. The sensitivity of the road 10 makes the isolation of the closed loop 10 better.
  • the first solder ball 31 has a first width W1 in the second direction Y, and the second direction Y is parallel to the bare chip 2 and vertical.
  • the largest dimension of the outer contour of the first solder ball 31 in the second direction Y is the first width W1.
  • the first width W1 is the diameter of the first solder ball 31.
  • the width of the second solder ball 32 in the second direction Y is equal to the first width W1.
  • the first conductive portion 21 has a second width W2 in the second direction Y. The ratio of the second width W2 to the first width W1 is greater than or equal to 0.75.
  • the outer contour of the first solder ball 31 is the same as or very similar to the outer contour of the second solder ball 32.
  • the second solder ball 32 is also considered to be in the second when the width of the second solder ball 32 in the second direction Y is slightly different from the first width W1 due to an error in manufacturing process.
  • the width in the direction Y is equal to the first width W1.
  • the closed loop 10 when the ratio of the second width W2 to the first width W1 is greater than or equal to 0.75, that is, the width of the first conductive portion 21 and the width of the first solder ball 31,
  • the width of the second solder ball 32 is similar, the closed loop 10 has a better isolation effect, and can effectively isolate the two inductors (22, 23).
  • the second width W2 is equal to the first width W1.
  • the width of the first conductive portion 21 is the same as the width of the first solder ball 31 and the width of the second solder ball 32, which can save the material of the first conductive portion 21, and the The closed loop 10 can also well reduce the degree of coupling between the first inductor 22 and the second inductor 23, and the closed loop 10 has a good isolation effect.
  • the first width W1 of the first solder ball 31 is 80 um
  • the second width W2 is 60 um or more. It can be seen from experiments that when the frequency is 10 GHz, when the second width W2 is greater than or equal to 60 um, the isolation is greater than or equal to 70.1; as the second width W2 increases, the isolation can be increased from 70.1 to 70.5, and the isolation value is In the higher range; when the second width W2 is equal to 80um, the isolation is increased to 70.5; after the second width W2 is greater than 80um, the isolation is no longer changed as the second width W2 increases.
  • the height of the first solder ball 31 and the second solder ball 32 is 85 um.
  • the lengths of the first solder ball 31 and the second solder ball 32 are not specifically limited in the present application.
  • the spacing between the first inductor 22 and the second inductor 23 is also not specifically defined in the present application.
  • the second conductive portion 11 has a strip shape.
  • the extending direction of the second conductive portion 11 coincides with the first direction X.
  • the second conductive portion 11 may be a metal trace formed in the substrate 1. Since the extending direction of the second conductive portion 11 is consistent with the first direction X, the second conductive portion 11 has a short length, and the second conductive portion 11 has a small resistance, which is advantageous for improving the closed loop.
  • the sensitivity of the road 10 makes the isolation of the closed loop 10 better.
  • the second conductive portion 11 has a third width W3 in the second direction Y, and the third width W3 is greater than or equal to the second width W2.
  • the third width W3 is equal to the second width W2.
  • the isolation loop 10 has a better isolation effect, and can effectively isolate the two inductors (22, 23).
  • the second conductive portion 11 may also have other shapes, such as a square shape, a circular shape, or the like.
  • the solder ball set 3 further includes a third solder ball 33.
  • the third solder ball 33 is arranged in the same direction as the first solder ball 31 and the second solder ball 32 (for example, the first direction X), and the third solder ball 33 is located in the The first solder ball 31 is between the second solder ball 32.
  • the third solder ball 33 connects the first conductive portion 21 and the second conductive portion 11 .
  • the first solder ball 31, the second solder ball 32, and the third solder ball 33 are connected between the first conductive portion 21 and the second conductive portion 11 . Therefore, a plurality of parallel small loops are formed in the closed loop 10, so that the isolation effect of the closed loop 10 on the first inductor 22 and the second inductor 23 is better.
  • the number of the third solder balls 33 may be plural.
  • a plurality of the third solder balls 33 are arranged between the first solder balls 31 and the second solder balls 32. In the present application, "a plurality" means at least two.
  • the first inductor 22 includes an upper layer inductor 221 , a lower layer inductor 222 , and a plurality of conductive pillars 223 .
  • the upper layer inductor 221 is stacked and spaced apart from the lower layer inductor 222 , and the plurality of conductive pillars 223 are connected between the upper layer inductor 221 and the lower layer inductor 222 .
  • the first inductor 22 has a large thickness, thereby increasing the Q value of the first inductor 22.
  • the upper layer inductor 221 or the lower layer inductor 222 is disposed in the same layer as the first conductive portion 21.
  • the preparation process of the first inductor 22 and the first conductive portion 21 is integrated in the molding process of the bare chip 2, and the first conductive portion 21 can be fabricated in the first inductor 22. Synchronous molding in the process simplifies the manufacturing process of the bare chip 2 and reduces the cost of the bare chip 2.
  • the first inductor 22 may further include other inductor layers, and the other inductor layers are connected to the upper layer inductor 221 or the lower layer inductor 222 through the conductive pillars.
  • the first conductive portion 21 may also include multiple layers of conductive traces.
  • the molding process of the multilayer conductive layer is integrated in the preparation process of the first inductor 22.
  • the molding process of the first conductive portion 21 can also be independent of the preparation process of the first inductor 22.
  • the first inductor 22 adopts a differential structure, and the first inductor 22 is bilaterally symmetric.
  • the lower left corner and the lower right corner of the first inductor 22 are respectively input/output ports, and the middle position is a ground port (can be grounded as needed or suspended).
  • the second inductor 23 adopts the same or similar structure as the first inductor 22.
  • the second inductor 23 also includes a plurality of layers of inductance, and the multilayer inductors are electrically connected through the conductive columns.
  • the second inductor 23 is disposed in the same layer as the first inductor 22, so that the second inductor 23 and the first inductor 22 are formed in the same process, and the cost of the bare chip 2 is reduced.
  • the second inductor 23 and the first inductor 22 may also be arranged in different routing layers.
  • the thickness direction Z is as shown in FIGS. 2 and 3, the thickness direction Z is perpendicular to the first direction X and the second direction Y) are very thin (micron level), when the first inductance 22 and the second inductance 23 are located on both sides of the closed loop 10, the closed loop 10
  • the first inductor 22 and the second inductor 23 in any of the trace layers can be well insulated. Therefore, the first conductive layer 21 and the first inductor 22 are not strictly defined in the present application.
  • the second inductor 23 is arranged in a positional relationship between the trace layers, and the trace layers in which the three are located may be arranged in the same layer or in different layers.
  • the embodiment of the present application further provides a communication device 200.
  • the communication device 200 includes a housing 300, a circuit board 400, and a chip 100.
  • the chip 100 employs the chip described in the above embodiments.
  • the circuit board 400 is housed inside the housing 300.
  • the chip 100 is fixed to the circuit board 400 and electrically connected to the circuit board 400. Since the chip 100 can improve the crosstalk problem between adjacent inductors, the chip 100 can process and transmit signals with higher quality, and thus the performance of the communication device 200 to which the chip 100 is applied is better.
  • the communication device 200 includes, but is not limited to, a mobile phone, a tablet, a communication base station, and the like.

Abstract

Provided is a chip, comprising a substrate, a bare chip, and a solder ball set soldered between the substrate and the bare chip. The solder ball set comprises a first solder ball and a second solder ball spaced apart from each other; a first conductive portion connecting the first solder ball to the second solder ball is arranged on the bare chip; a second conductive portion connecting the first solder ball to the second solder ball is arranged on the substrate; the first solder ball, the first conductive portion, the second solder ball and the second conductive portion form a closed loop; and the bare chip further comprises two inductors distributed at two sides of the closed loop. The chip can ameliorate the crosstalk phenomenon between adjacent inductors. A communication device is further provided.

Description

芯片及通信设备Chip and communication equipment 技术领域Technical field
本申请涉及集成电路领域,尤其涉及一种防串扰的芯片及通信设备。The present application relates to the field of integrated circuits, and in particular, to a chip and communication device for preventing crosstalk.
背景技术Background technique
目前,随着通信设备的发展,芯片(Integrated circuit,IC,又称集成电路)也朝着小型化以及多功能方向发展。由于芯片上排布器件的空间有限,为了排布更多的功能IP(intellectual property,知识产权)模块,各功能IP模块之间的间距越来越小,导致各功能IP模块之间的串扰成为影响芯片性能的关键问题。其中,相邻的两个电感线圈之间的耦合主要为磁场耦合:当其中一个线圈(激励线圈)中通过交变电流时,该线圈为激励线圈周围空间形成交变磁场,交变磁场的磁感应线穿过另一个线圈(受扰线圈)时,由于受扰线圈包围的磁通量发生变化,就会在受扰线圈中形成感应电流,即为串扰。由于激励线圈和受扰线圈之间的间距较小,导致串扰现象尤为明显。At present, with the development of communication devices, integrated circuits (ICs, also known as integrated circuits) are also moving toward miniaturization and multi-functionality. Due to the limited space of the devices on the chip, in order to arrange more functional IP (intellectual property) modules, the spacing between the functional IP modules is getting smaller and smaller, resulting in crosstalk between the functional IP modules. A key issue affecting chip performance. Wherein, the coupling between two adjacent inductor coils is mainly magnetic field coupling: when one of the coils (exciting coils) passes an alternating current, the coil forms an alternating magnetic field around the excitation coil, and the magnetic field of the alternating magnetic field When the wire passes through the other coil (the disturbed coil), the induced current is formed in the disturbed coil due to the change of the magnetic flux surrounded by the disturbed coil, which is crosstalk. Crosstalk is particularly noticeable due to the small spacing between the excitation coil and the victim coil.
发明内容Summary of the invention
本申请提供一种芯片及一种通信设备。The application provides a chip and a communication device.
第一方面,本申请提供了一种芯片。所述芯片包括基板、裸芯片及焊接在所述基板与所述裸芯片之间的焊球组。所述焊球组包括间隔排布的第一焊球和第二焊球。所述第一焊球和所述第二焊球之间有间隙,所述间隙会被胶体或其他粘接剂填充。所述裸芯片上布设有连接在所述第一焊球与所述第二焊球的第一导电部。所述基板上布设有连接在所述第一焊球与所述第二焊球的第二导电部。所述第一焊球、所述第一导电部、所述第二焊球及所述第二导电部形成闭合环路。所述裸芯片还包括两个电感,所述两个电感分布在所述闭合环路的两侧。In a first aspect, the present application provides a chip. The chip includes a substrate, a bare chip, and a solder ball group soldered between the substrate and the bare chip. The set of solder balls includes a first solder ball and a second solder ball that are spaced apart. There is a gap between the first solder ball and the second solder ball, and the gap may be filled with a colloid or other adhesive. The bare chip is provided with a first conductive portion connected to the first solder ball and the second solder ball. A second conductive portion connected to the first solder ball and the second solder ball is disposed on the substrate. The first solder ball, the first conductive portion, the second solder ball, and the second conductive portion form a closed loop. The bare chip further includes two inductors distributed on both sides of the closed loop.
在本实施方式中,当两个电感中的其中一个电感为激励线圈时,另一个电感为受扰线圈,所述激励线圈和所述受扰线圈分别位于所述闭合环路的两侧,利用法拉第电磁感应定律,所述激励线圈的磁力线通过所述闭合环路时,会在所述闭合环路中感应出感应电流,以此抵消通过所述闭合环路的磁力线,因此受扰线圈中通过的磁力线就减少了,使得所述激励线圈和所述受扰线圈之间的耦合程度降低,隔离度得到了提高。换言之,由于所述两个电感分布在所述闭合环路的两侧,所述闭合环路能够有效隔离所述两个电感,因此所述两个电感可以利用所述闭合环路降低彼此之间的耦合度,从而改善所述两个电感之间的串扰现象。In this embodiment, when one of the two inductors is an excitation coil, the other inductor is a victim coil, and the excitation coil and the victim coil are respectively located on both sides of the closed loop, and utilize Faraday's law of electromagnetic induction, when the magnetic field lines of the excitation coil pass through the closed loop, an induced current is induced in the closed loop, thereby canceling the magnetic lines of force passing through the closed loop, so that the disturbed coil passes through The magnetic field lines are reduced, so that the degree of coupling between the excitation coil and the victim coil is reduced, and the isolation is improved. In other words, since the two inductors are distributed on both sides of the closed loop, the closed loop can effectively isolate the two inductors, so the two inductors can be lowered by the closed loop The degree of coupling, thereby improving the crosstalk between the two inductors.
其中,所述芯片利用所述裸芯片中的金属走线形成所述第一导电部,利用芯片封装结构中的所述焊球组形成所述第一焊球和所述第二焊球,利用所述基板上的封装金属层形成所述第二导电部,因此所述闭合环路可以充分利用所述芯片的封装结构,提高对所述芯片封装结构的利用率,从而能够降低所述隔离环的成本。Wherein, the chip forms the first conductive portion by using a metal trace in the bare chip, and forms the first solder ball and the second solder ball by using the solder ball group in a chip package structure, and utilizes The encapsulating metal layer on the substrate forms the second conductive portion, so the closed loop can fully utilize the package structure of the chip, improve utilization of the chip package structure, and thereby reduce the isolation ring the cost of.
其中,由于所述芯片的所述闭合环路由所述第一焊球、所述第一导电部、所述第二焊球及所述第二导电部依次连接所形成,所述第一导电部形成在所述裸芯片上,所述第二导 电部形成在所述基板上,所述第一焊球和所述第二焊球连接在所述裸芯片与所述基板之间,因此所述闭合环路相对所述裸芯片为立体式的闭合环路。由于所述两个电感分别位于所述闭合环路的两侧,也即所述闭合环路只是设置于所述两个电感的磁力线相互耦合的必经路径上,所述闭合环路不会对所述两个电感的其他方位上的磁力线产生减弱作用,因此所述闭合环路对所述两个电感的电感量和Q值(也叫电感的品质因数,是指电感在某一频率的交流电压下工作时,所呈现的感抗与其等效损耗电阻之比)所产生的影响非常小。简言之,所述闭合环路能够在不降低所述两个电感的电感量和Q值的情况下,降低所述两个电感之间的耦合度,以改善所述两个电感之间的串扰现象。The first conductive portion is formed because the closed loop of the chip is formed by sequentially connecting the first solder ball, the first conductive portion, the second solder ball, and the second conductive portion. Formed on the bare chip, the second conductive portion is formed on the substrate, and the first solder ball and the second solder ball are connected between the bare chip and the substrate, so The closed loop is a three-dimensional closed loop with respect to the bare chip. Since the two inductors are respectively located on two sides of the closed loop, that is, the closed loop is only disposed on a necessary path in which the magnetic lines of the two inductors are coupled to each other, the closed loop does not The lines of magnetic force in other orientations of the two inductors produce a weakening effect, so the inductance and Q value of the closed loop to the two inductors (also called the quality factor of the inductor) refers to the exchange of the inductor at a certain frequency. The effect of the inductive reactance and its equivalent loss resistance when operating at voltage is very small. In short, the closed loop can reduce the degree of coupling between the two inductors without reducing the inductance and Q of the two inductors to improve the relationship between the two inductors. Crosstalk.
其中,所述闭合环路接地设置。当然,在其他实施方式中,所述闭合环路也可以悬空设置,也即所述闭合环路不接入其他电路中。Wherein the closed loop is grounded. Of course, in other embodiments, the closed loop can also be left floating, that is, the closed loop is not connected to other circuits.
一种实施方式中,所述裸芯片具有朝向所述基板的连接表面。所述两个电感的中心点的连线为第一连线。所述第一焊球的中心点与所述第二焊球的中心点的连线为第二连线。所述第一连线在所述连接表面上的正投影与所述第二连线在所述连接表面上的正投影相交。此时,所述闭合环路位于所述第一电感与所述第二电感之间较中间的区域,所述闭合环路能够抵消更多磁力线,隔离度更高。In one embodiment, the bare chip has a connection surface toward the substrate. The line connecting the center points of the two inductors is the first connection. A line connecting the center point of the first solder ball and the center point of the second solder ball is a second line. An orthographic projection of the first line on the connecting surface intersects an orthographic projection of the second line on the connecting surface. At this time, the closed loop is located in a middle area between the first inductor and the second inductor, and the closed loop can cancel more magnetic lines of force, and the isolation is higher.
其中,所述第一连线可穿过所述闭合环路,以使所述闭合环路的隔离效果更佳。Wherein, the first connection may pass through the closed loop to better isolate the closed loop.
其中,所述第一连线在所述连接表面上的正投影穿过所述第二连线在所述连接表面上的正投影的中心。此时,所述闭合环路位于所述第一电感与所述第二电感之间的正中区域,所述闭合环路的隔离效果更佳。Wherein the orthographic projection of the first line on the connecting surface passes through the center of the orthographic projection of the second line on the connecting surface. At this time, the closed loop is located in a middle area between the first inductor and the second inductor, and the closed loop has better isolation effect.
一种实施方式中,所述第一连线在所述连接表面上的正投影垂直于所述第二连线在所述连接表面上的正投影。此时,所述第一电感和所述第二电感大致对称地排布在所述闭合环路的两侧,使得所述闭合环路能够抵消更多磁力线,隔离度更高,且对所述第一电感和所述第二电感的电感量及Q值得影响更小。In one embodiment, the orthographic projection of the first line on the connecting surface is perpendicular to the orthographic projection of the second line on the connecting surface. At this time, the first inductor and the second inductor are arranged substantially symmetrically on both sides of the closed loop, so that the closed loop can cancel more magnetic lines of force, the isolation is higher, and The inductance of the first inductance and the second inductance and the Q value are less affected.
一种实施方式中,所述第一焊球和所述第二焊球沿第一方向排布。所述第一焊球与所述第二焊球之间的间距为第一长度。所述第一焊球与所述第二焊球之间的间距为所述第一焊球的外轮廓与所述第二焊球的外轮廓之间的最小距离。所述两个电感为第一电感和第二电感。所述第一电感在所述第一方向的长度为第二长度。所述第二电感在所述第一方向的长度为第三长度。所述第二长度大于等于所述第三长度。所述第一长度与所述第二长度的比在0.75至1.25的范围内。In one embodiment, the first solder ball and the second solder ball are arranged in a first direction. The distance between the first solder ball and the second solder ball is a first length. The spacing between the first solder ball and the second solder ball is a minimum distance between an outer contour of the first solder ball and an outer contour of the second solder ball. The two inductors are a first inductor and a second inductor. The length of the first inductor in the first direction is a second length. The length of the second inductor in the first direction is a third length. The second length is greater than or equal to the third length. The ratio of the first length to the second length is in the range of 0.75 to 1.25.
在本实施方式中,所述第一长度与所述第二长度的比在0.75至1.25的范围内时,也即所述闭合环路的长度与所述两个电感中长度较长的电感的长度差不多时,所述闭合环路的隔离效果较佳,能够有效地对所述两个电感起到隔离作用。In this embodiment, when the ratio of the first length to the second length is in the range of 0.75 to 1.25, that is, the length of the closed loop and the longer length of the two inductors When the length is similar, the closed loop has better isolation effect, and can effectively isolate the two inductors.
一种实施方式中,所述第一长度等于所述第二长度。此时,所述闭合环路的长度与所述两个电感中长度较长的电感的长度等长,所述闭合环路能够更好地降低所述第一电感与所述第二电感之间的耦合度,所述闭合环路的隔离效果好。In one embodiment, the first length is equal to the second length. At this time, the length of the closed loop is equal to the length of the longer length of the two inductors, and the closed loop can better reduce the relationship between the first inductor and the second inductor The degree of coupling, the isolation of the closed loop is good.
一种实施方式中,所述第一导电部呈条形,所述第一导电部的延伸方向与所述第一方向一致。此时,所述第一导电部可以为形成在所述裸芯片内的一段金属走线。由于所述第一导电部的延伸方向与所述第一方向一致,因此所述第一导电部长度较短,所述第一导电 部电阻较小,有利于提高所述闭合环路的敏感度,使得所述闭合环路的隔离效果更佳。In one embodiment, the first conductive portion has a strip shape, and the extending direction of the first conductive portion is consistent with the first direction. At this time, the first conductive portion may be a metal trace formed in the bare chip. Since the extending direction of the first conductive portion is consistent with the first direction, the length of the first conductive portion is short, and the resistance of the first conductive portion is small, which is favorable for improving the sensitivity of the closed loop. The isolation effect of the closed loop is better.
一种实施方式中,所述第一焊球在第二方向上具有第一宽度,所述第二方向平行于所述裸芯片且垂直于所述第一方向。所述第二焊球在所述第二方向上的宽度等于所述第一宽度。所述第一导电部在所述第二方向具有第二宽度。所述第二宽度与所述第一宽度的比大于等于0.75。其中,所述第一焊球的外轮廓与所述第二焊球的外轮廓相同或非常相似。由于制造工艺上的误差,所述第二焊球在所述第二方向上的宽度与所述第一宽度有微小偏差时,也认为所述第二焊球在所述第二方向上的宽度等于所述第一宽度。In one embodiment, the first solder ball has a first width in a second direction, the second direction being parallel to the bare chip and perpendicular to the first direction. The width of the second solder ball in the second direction is equal to the first width. The first conductive portion has a second width in the second direction. The ratio of the second width to the first width is greater than or equal to 0.75. Wherein, the outer contour of the first solder ball is the same as or very similar to the outer contour of the second solder ball. The width of the second solder ball in the second direction is also considered when the width of the second solder ball in the second direction is slightly different from the first width due to an error in manufacturing process. Equal to the first width.
在本实施方式中,所述第二宽度与所述第一宽度的比大于等于0.75时,也即所述第一导电部的宽度与所述第一焊球的宽度、所述第二焊球的宽度差不多时,所述闭合环路的隔离效果较佳,能够有效地对所述两个电感起到隔离作用。In this embodiment, when the ratio of the second width to the first width is greater than or equal to 0.75, that is, the width of the first conductive portion and the width of the first solder ball, the second solder ball When the width is similar, the closed loop has better isolation effect, and can effectively isolate the two inductors.
一种实施方式中,所述第二宽度等于所述第一宽度。此时,所述第一导电部的宽度与所述第一焊球的宽度、所述第二焊球的宽度相同,既可以节约所述第一导电部的材料,并且所述闭合环路也能够很好地降低所述第一电感与所述第二电感之间的耦合度,所述闭合环路的隔离效果好。In one embodiment, the second width is equal to the first width. At this time, the width of the first conductive portion is the same as the width of the first solder ball and the width of the second solder ball, which can save the material of the first conductive portion, and the closed loop is also The degree of coupling between the first inductance and the second inductance can be well reduced, and the isolation effect of the closed loop is good.
一种实施方式中,所述第二导电部呈条形。所述第二导电部的延伸方向与所述第一方向一致。此时,所述第二导电部可以为形成在所述基板内的一段金属走线。由于所述第二导电部的延伸方向与所述第一方向一致,因此所述第二导电部长度较短,所述第二导电部电阻较小,也有利于提高所述闭合环路的敏感度,使得所述闭合环路的隔离效果更佳。In one embodiment, the second conductive portion has a strip shape. The extending direction of the second conductive portion is consistent with the first direction. At this time, the second conductive portion may be a metal trace formed in the substrate. Since the extending direction of the second conductive portion is consistent with the first direction, the second conductive portion has a short length, and the second conductive portion has a small resistance, which is also advantageous for improving the sensitivity of the closed loop. The degree of isolation of the closed loop is better.
其中,所述第二导电部在所述第二方向上具有第三宽度,所述第三宽度大于等于所述第二宽度。例如,所述第三宽度等于所述第二宽度。此时,所述闭合环路的隔离效果较佳,能够有效地对所述两个电感起到隔离作用。The second conductive portion has a third width in the second direction, and the third width is greater than or equal to the second width. For example, the third width is equal to the second width. At this time, the closed loop has a better isolation effect, and can effectively isolate the two inductors.
一种实施方式中,所述焊球组还包括第三焊球。所述第三焊球与所述第一焊球及所述第二焊球排布在同一方向上,且所述第三焊球位于所述第一焊球与所述第二焊球之间。所述第三焊球连接所述第一导电部和所述第二导电部。In one embodiment, the solder ball set further includes a third solder ball. The third solder ball is arranged in the same direction as the first solder ball and the second solder ball, and the third solder ball is located between the first solder ball and the second solder ball . The third solder ball connects the first conductive portion and the second conductive portion.
在本实施方式中,由于所述第一导电部与所述第二导电部之间连接有所述第一焊球、所述第二焊球及所述第三焊球,因此所述闭合环路内形成了多个并联小环路,使得所述闭合环路的隔离效果更佳。In this embodiment, the first solder ball, the second solder ball, and the third solder ball are connected between the first conductive portion and the second conductive portion, so the closed loop A plurality of parallel small loops are formed in the road, so that the isolation effect of the closed loop is better.
一种实施方式中,所述第一电感包括上层电感、下层电感及多个导电柱。所述上层电感与所述下层电感间隔地层叠设置,所述多个导电柱连接在所述上层电感与所述下层电感之间。此时,所述第一电感厚度较大,从而增加所述第一电感的Q值。In one embodiment, the first inductor includes an upper layer inductor, a lower layer inductor, and a plurality of conductive pillars. The upper layer inductor is stacked and spaced apart from the lower layer inductor, and the plurality of conductive pillars are connected between the upper layer inductor and the lower layer inductor. At this time, the first inductor has a large thickness, thereby increasing the Q value of the first inductor.
其中,所述上层电感或所述下层电感与所述第一导电部同层设置。此时,所述第一电感和所述第一导电部的制备过程集成在所述裸芯片的成型过程中,且所述第一导电部能够在所述第一电感的制作工序中同步成型,从而简化了所述裸芯片的制作工序,降低了所述裸芯片的成本。The upper layer inductor or the lower layer inductor is disposed in the same layer as the first conductive portion. At this time, the preparation process of the first inductor and the first conductive portion is integrated in the molding process of the bare chip, and the first conductive portion can be synchronously formed in the manufacturing process of the first inductor. Thereby, the manufacturing process of the bare chip is simplified, and the cost of the bare chip is reduced.
第二方面,本申请提供了一种通信设备。所述通信设备包括壳体、电路板及芯片。所述芯片采用上述实施例中所描述的芯片。所述电路板收容于所述壳体内部。所述芯片固定于所述电路板且电性连接所述电路板。由于所述芯片能够改善相邻电感之间的串扰问题,所述芯片能够更高质量地处理和传输信号,因此应用所述芯片的所述通信设备的性能较佳。In a second aspect, the present application provides a communication device. The communication device includes a housing, a circuit board, and a chip. The chip employs the chip described in the above embodiments. The circuit board is housed inside the housing. The chip is fixed to the circuit board and electrically connected to the circuit board. Since the chip can improve the crosstalk problem between adjacent inductors, the chip can process and transmit signals with higher quality, and thus the performance of the communication device to which the chip is applied is better.
附图说明DRAWINGS
为了更清楚地说明本申请实施方式或背景技术中的技术方案,下面将对本申请实施方式或背景技术中所需要使用的附图进行说明。In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background art, the drawings to be used in the embodiments of the present application or the background art will be described below.
图1是本申请实施方式所提供的一种可选的芯片的结构示意图;1 is a schematic structural diagram of an optional chip provided by an embodiment of the present application;
图2是图1所示芯片的A处结构的放大示意图;Figure 2 is an enlarged schematic view showing the structure of the chip A of Figure 1;
图3是图1所示芯片的两个电感及闭合环路的一种实施方式的立体结构示意图;3 is a schematic perspective view showing an embodiment of two inductors and a closed loop of the chip shown in FIG. 1;
图4是基于本申请方案得到的一种可能的芯片与现有芯片的隔离度与频率的关系曲线图;4 is a graph showing the relationship between the isolation of a possible chip and the existing chip based on the solution of the present application;
图5是基于本申请方案得到的一种可能的芯片与现有芯片的电感量与频率的关系曲线图FIG. 5 is a graph showing the relationship between the inductance and the frequency of a possible chip and the existing chip obtained based on the solution of the present application.
图6是基于本申请方案得到的一种可能的芯片与现有芯片的Q值与频率的关系曲线图;6 is a graph showing a relationship between a possible chip and a Q value and a frequency of a conventional chip obtained based on the solution of the present application;
图7是图2所示结构沿B-B线处剖开的部分结构示意图;Figure 7 is a partial structural view of the structure shown in Figure 2 taken along line B-B;
图8是图1所示芯片的两个电感及闭合环路的另一种实施方式的立体结构示意图;8 is a schematic perspective view showing another embodiment of two inductors and a closed loop of the chip shown in FIG. 1;
图9是图2中第一电感的结构示意图;9 is a schematic structural view of the first inductor of FIG. 2;
图10是本申请实施方式所提供的一种通信设备的结构示意图;FIG. 10 is a schematic structural diagram of a communication device according to an embodiment of the present disclosure;
图11是图1所示芯片的部分结构在裸芯片的连接表面上的正投影的位置关系示意图;11 is a schematic view showing a positional relationship of a partial projection of a portion of the chip shown in FIG. 1 on a connection surface of a bare chip;
图12是图1所示芯片的部分结构在裸芯片的连接表面上的正投影的另一种位置关系示意图。FIG. 12 is another schematic diagram showing the positional relationship of the partial structure of the chip shown in FIG. 1 on the connection surface of the bare chip. FIG.
具体实施方式detailed description
下面结合本申请实施方式中的附图对本申请实施方式进行描述。The embodiments of the present application are described below in conjunction with the accompanying drawings in the embodiments of the present application.
请一并参阅图1和图2,本申请提供一种芯片100。所述芯片100包括基板1、裸芯片2(die)及焊接在所述基板1与所述裸芯片2之间的焊球组3。Referring to FIG. 1 and FIG. 2 together, the present application provides a chip 100. The chip 100 includes a substrate 1 , a bare chip 2 , and a solder ball group 3 soldered between the substrate 1 and the bare chip 2 .
请一并参阅图2和图3,所述焊球组3包括间隔排布的第一焊球31和第二焊球32。所述第一焊球31和所述第二焊球32之间有间隙,所述间隙会被胶体或其他粘接剂填充。所述裸芯片2上布设有连接所述第一焊球31与所述第二焊球32的第一导电部21。所述基板1上布设有连接所述第一焊球31与所述第二焊球32的第二导电部11。所述第一焊球31、所述第一导电部21、所述第二焊球32及所述第二导电部11形成闭合环路10。所述裸芯片2还包括两个电感(22、23),所述两个电感(22、23)分布在所述闭合环路10的两侧。Referring to FIG. 2 and FIG. 3 together, the solder ball set 3 includes a first solder ball 31 and a second solder ball 32 which are spaced apart. There is a gap between the first solder ball 31 and the second solder ball 32, and the gap may be filled with a colloid or other adhesive. The bare chip 2 is provided with a first conductive portion 21 connecting the first solder ball 31 and the second solder ball 32. A second conductive portion 11 connecting the first solder ball 31 and the second solder ball 32 is disposed on the substrate 1 . The first solder ball 31, the first conductive portion 21, the second solder ball 32, and the second conductive portion 11 form a closed loop 10. The bare chip 2 further includes two inductors (22, 23) distributed on both sides of the closed loop 10.
在本实施方式中,当两个电感(22、23)中的其中一个电感为激励线圈时,另一个电感为受扰线圈,所述激励线圈和所述受扰线圈分别位于所述闭合环路10的两侧,利用法拉第电磁感应定律,所述激励线圈的磁力线通过所述闭合环路10时,会在所述闭合环路10中感应出感应电流,以此抵消通过所述闭合环路10的磁力线,因此受扰线圈中通过的磁力线就减少了,使得所述激励线圈和所述受扰线圈之间的耦合程度降低,隔离度得到了提高。换言之,由于所述两个电感(22、23)分布在所述闭合环路10的两侧,所述闭合环路10能够有效隔离所述两个电感(22、23),因此所述两个电感(22、23)可以利用所述闭合环路10降低彼此之间的耦合度,从而改善所述两个电感(22、23)之间的串扰现象。In this embodiment, when one of the two inductors (22, 23) is an excitation coil, the other inductor is a victim coil, and the excitation coil and the victim coil are respectively located in the closed loop On both sides of 10, using Faraday's law of electromagnetic induction, when the magnetic field lines of the excitation coil pass through the closed loop 10, an induced current is induced in the closed loop 10, thereby canceling through the closed loop 10 The magnetic lines of force, so that the lines of magnetic force passing through the disturbed coil are reduced, so that the degree of coupling between the exciting coil and the disturbed coil is reduced, and the isolation is improved. In other words, since the two inductors (22, 23) are distributed on both sides of the closed loop 10, the closed loop 10 can effectively isolate the two inductors (22, 23), thus the two The inductors (22, 23) can utilize the closed loop 10 to reduce the degree of coupling between each other, thereby improving crosstalk between the two inductors (22, 23).
其中,请一并参阅图2和图3,所述芯片100利用所述裸芯片2中的金属走线形成所述第一导电部21,利用芯片100封装结构中的所述焊球组3形成所述第一焊球31和所述 第二焊球32,利用所述基板1上的封装金属层形成所述第二导电部11,因此所述闭合环路10可以充分利用所述芯片100的封装结构,提高对所述芯片100封装结构的利用率,从而能够降低作为隔离环的闭合环路10的成本。当然,在其他实施方式中,也可采用先进的微机电系统(Micro-Electro-Mechanical System,MEMS)加工技术构建出立体结构的具有闭合环路的隔离环,该隔离环同样可起到提高电感间的隔离度的效果。Referring to FIG. 2 and FIG. 3 together, the chip 100 forms the first conductive portion 21 by using metal traces in the bare chip 2, and is formed by using the solder ball group 3 in the package structure of the chip 100. The first solder ball 31 and the second solder ball 32 form the second conductive portion 11 by using a package metal layer on the substrate 1 , so the closed loop 10 can fully utilize the chip 100 The package structure improves the utilization of the package structure of the chip 100, thereby reducing the cost of the closed loop 10 as an isolation ring. Of course, in other embodiments, an advanced micro-electro-mechanical system (MEMS) processing technology can also be used to construct a three-dimensional isolation ring with a closed loop, which can also improve the inductance. The effect of isolation between the two.
其中,请一并参阅图2和图3,由于所述芯片100的所述闭合环路10由所述第一焊球31、所述第一导电部21、所述第二焊球32及所述第二导电部11依次连接所形成,所述第一导电部21形成在所述裸芯片2上,所述第二导电部11形成在所述基板1上,所述第一焊球31和所述第二焊球32连接在所述裸芯片2与所述基板1之间,因此所述闭合环路10相对所述裸芯片2为立体式的闭合环路。由于所述两个电感(22、23)分别位于所述闭合环路10的两侧,也即所述闭合环路10只是设置于所述两个电感(22、23)的磁力线相互耦合的必经路径上,所述闭合环路10不会对所述两个电感(22、23)的其他方位上的磁力线产生减弱作用,因此所述闭合环路10对所述两个电感(22、23)的电感量和Q值(也叫电感的品质因数,是指电感在某一频率的交流电压下工作时,所呈现的感抗与其等效损耗电阻之比)所产生的影响非常小。Referring to FIG. 2 and FIG. 3 together, since the closed loop 10 of the chip 100 is composed of the first solder ball 31, the first conductive portion 21, the second solder ball 32, and the The second conductive portion 11 is formed by sequentially connecting, the first conductive portion 21 is formed on the bare chip 2, the second conductive portion 11 is formed on the substrate 1, the first solder ball 31 and The second solder ball 32 is connected between the bare chip 2 and the substrate 1 , so the closed loop 10 is a three-dimensional closed loop with respect to the bare chip 2 . Since the two inductors (22, 23) are respectively located on both sides of the closed loop 10, that is, the closed loop 10 is only required to be coupled to the magnetic lines of the two inductors (22, 23). The closed loop 10 does not attenuate magnetic lines of force in other orientations of the two inductors (22, 23) over the path, so the closed loop 10 pairs the two inductors (22, 23) The inductance and Q value (also called the quality factor of the inductor, which is the ratio of the inductive reactance to its equivalent loss resistance when the inductor operates at an AC voltage of a certain frequency) has very little effect.
如图4所示,图4是基于本申请方案得到的一种可能的芯片100与现有芯片对比下的隔离度与频率的关系曲线图。其中,图4中横坐标表示频率(Frequency),单位为GHz(吉赫);纵坐标表示隔离度(Isolation),单位为dB。曲线C1代表现有芯片中未设置隔离结构的两个电感之间隔离度与频率的关系,曲线C1的m1点代表频率为10GHz时,两个电感之间的隔离度为59.68dB。曲线C2代表本申请所述芯片100中设置在所述闭合环路10两侧的所述两个电感(22、23)之间的隔离度与频率的关系,曲线C2的m2点代表频率为10GHz时,所述两个电感(22、23)之间的隔离度为70.53dB。由m2数值与m1数值的比对(数值差距较大)、曲线C2与曲线C1的比对(曲线明显分离且间距较大)可知,本申请设置在所述闭合环路10两侧的所述两个电感(22、23)之间的隔离度明显高于未设置隔离结构的两个电感之间的隔离度。As shown in FIG. 4, FIG. 4 is a graph showing the relationship between isolation and frequency of a possible chip 100 obtained according to the solution of the present application in comparison with the existing chip. In FIG. 4, the abscissa indicates the frequency (Frequency), and the unit is GHz (gih); the ordinate indicates the isolation (Isolation), and the unit is dB. The curve C1 represents the relationship between the isolation and the frequency between the two inductors in the existing chip without the isolation structure. The m1 point of the curve C1 represents the isolation between the two inductors at a frequency of 10 GHz of 59.68 dB. The curve C2 represents the relationship between the isolation and the frequency between the two inductors (22, 23) disposed on both sides of the closed loop 10 in the chip 100 of the present application, and the m2 point of the curve C2 represents a frequency of 10 GHz. The isolation between the two inductors (22, 23) is 70.53 dB. From the comparison of the m2 value and the m1 value (the numerical difference is large), the comparison of the curve C2 and the curve C1 (the curve is clearly separated and the spacing is large), the present application is provided on both sides of the closed loop 10 The isolation between the two inductors (22, 23) is significantly higher than the isolation between the two inductors without the isolation structure.
如图5所示,图5是基于本申请方案提供的一种可能的芯片与现有芯片的电感量与频率的关系曲线图。其中,图5中横坐标表示频率(Frequency),单位为GHz(吉赫);纵坐标表示电感量(Inductance),单位为nH(纳亨)。曲线D1代表现有芯片中未设置隔离结构的两个电感的电感量与频率的关系,曲线D1中m1点代表频率为10GHz时,两个电感的电感量为0.1882nH。曲线D2代表本申请所述芯片100中设置在所述闭合环路10两侧的所述两个电感(22、23)的电感量与频率的关系,曲线D2中m2点代表频率为10GHz时,所述两个电感(22、23)的电感量为0.1875nH。由m2数值与m1数值的比对(数值相近)、曲线D2与曲线D1的比对(曲线几乎重叠)可知,本申请设置在所述闭合环路10两侧的所述两个电感(22、23)的电感量与未设置隔离结构的两个电感的电感量的差别不大,本申请所述闭合环路10对电感量几乎无影响。As shown in FIG. 5, FIG. 5 is a graph showing the relationship between the inductance and the frequency of a possible chip and an existing chip based on the solution of the present application. In FIG. 5, the abscissa indicates the frequency (Frequency), and the unit is GHz (gih); the ordinate indicates the inductance (Inductance), and the unit is nH (nahen). The curve D1 represents the relationship between the inductance and the frequency of the two inductors in the existing chip in which the isolation structure is not provided. In the curve D1, the m1 point represents a frequency of 10 GHz, and the inductance of the two inductors is 0.1882 nH. The curve D2 represents the relationship between the inductance and the frequency of the two inductors (22, 23) disposed on both sides of the closed loop 10 in the chip 100 of the present application, and the m2 point in the curve D2 represents a frequency of 10 GHz. The inductance of the two inductors (22, 23) is 0.1875 nH. From the comparison of the m2 value and the m1 value (the numerical value is similar), the comparison of the curve D2 and the curve D1 (the curves are almost overlapped), it is known that the present application sets the two inductances on both sides of the closed loop 10 (22, The inductance of 23) is not much different from the inductance of the two inductors in which the isolation structure is not provided, and the closed loop 10 described in the present application has almost no influence on the inductance.
如图6所示,图6是基于本申请方案得到的一种可能的芯片100与现有芯片的Q值与频率的关系曲线图。其中,图6中横坐标表示频率(Frequency),单位为GHz(吉赫);纵坐标表示Q值(Q factor)。曲线E1代表现有芯片中未设置隔离结构的两个电感的电感量 与频率的关系,曲线E1中m1点代表频率为10GHz时,两个电感的Q值为28.28。曲线E2代表本申请所述芯片100中设置在所述闭合环路10两侧的所述两个电感(22、23)的电感量与频率的关系,曲线E2中m2点代表频率为10GHz时,所述两个电感(22、23)的Q值为28.15。由m2数值与m1数值的比对(数值相近)、曲线E2与曲线E1的比对(曲线几乎重叠)可知,本申请设置在所述闭合环路10两侧的所述两个电感(22、23)的Q值与未设置隔离结构的两个电感的Q值的差别不大,本申请所述闭合环路10对Q值几乎无影响。As shown in FIG. 6, FIG. 6 is a graph showing the relationship between the Q value and the frequency of a possible chip 100 and a conventional chip obtained based on the solution of the present application. In FIG. 6, the abscissa indicates the frequency (Frequency), and the unit is GHz (gih); the ordinate indicates the Q value (Q factor). The curve E1 represents the relationship between the inductance and the frequency of the two inductors in the existing chip without the isolation structure. When the m1 point in the curve E1 represents the frequency of 10 GHz, the Q value of the two inductors is 28.28. The curve E2 represents the relationship between the inductance and the frequency of the two inductors (22, 23) disposed on both sides of the closed loop 10 in the chip 100 of the present application, and the m2 point in the curve E2 represents a frequency of 10 GHz. The Q of the two inductors (22, 23) is 28.15. From the comparison of the m2 value and the m1 value (the numerical value is similar), the comparison of the curve E2 and the curve E1 (the curves almost overlap), the present application sets the two inductances on both sides of the closed loop 10 (22, The Q value of 23) is not much different from the Q value of the two inductors in which the isolation structure is not provided, and the closed loop 10 described in the present application has almost no influence on the Q value.
简言之,所述闭合环路10能够在不降低所述两个电感(22、23)的电感量和Q值的情况下,降低所述两个电感(22、23)之间的耦合度,以改善所述两个电感(22、23)之间的串扰现象。In short, the closed loop 10 is capable of reducing the degree of coupling between the two inductors (22, 23) without reducing the inductance and Q of the two inductors (22, 23). To improve the crosstalk between the two inductors (22, 23).
其中,请一并参阅图3,所述闭合环路10接地设置。当然,在其他实施方式中,所述闭合环路10也可以悬空设置,也即所述闭合环路10不接入其他电路中。Referring to FIG. 3 together, the closed loop 10 is grounded. Of course, in other embodiments, the closed loop 10 can also be suspended, that is, the closed loop 10 is not connected to other circuits.
其中,请一并参阅图3,所述两个电感(22、23)为第一电感22和第二电感23。可以理解的是,当所述第一电感22为激励线圈时,则所述第二电感23被动地成为受扰线圈;当所述第二电感23为激励线圈时,则所述第一电感22被动地成为受扰线圈。当所述第一电感22和所述第二电感23都处于工作状态时,所述第一电感22既是激励线圈,也是可能受到所述第二电感23干扰的受扰线圈;所述第二电感23既是激励线圈,也是可能受到所述第一电感22干扰的受扰线圈。Referring to FIG. 3 together, the two inductors (22, 23) are the first inductor 22 and the second inductor 23. It can be understood that when the first inductor 22 is an excitation coil, the second inductor 23 passively becomes a victim coil; when the second inductor 23 is an excitation coil, the first inductor 22 Passively become a victim coil. When the first inductor 22 and the second inductor 23 are both in an active state, the first inductor 22 is both an excitation coil and a victim coil that may be interfered by the second inductor 23; the second inductor 23 is both an excitation coil and a victim coil that may be interfered by the first inductance 22.
在一种实施方式中,所述芯片100可用做网络芯片(networking processor)。此时,所述芯片100是一个提供在通信网络中发送和接收数据逻辑(包括声音和视频)的微处理器。所述芯片100可用于通信设备(Industrial Communication Device,ICD)中。所述通信设备包括但不限于手机、平板电脑、通信基站等。In one embodiment, the chip 100 can be used as a networking processor. At this point, the chip 100 is a microprocessor that provides for transmitting and receiving data logic (including sound and video) in a communication network. The chip 100 can be used in an Industrial Communication Device (ICD). The communication device includes, but is not limited to, a mobile phone, a tablet computer, a communication base station, and the like.
其中,所述两个电感(22、23)可应用于配置射频信号的电路中。所述射频信号可以包括但不限于无线局域网(Wireless-Fidelity,Wi-Fi)信号、蓝牙信号、全球导航卫星系统(Global Navigation Satellite System,GNSS)信号、2G(2-Generation wireless telephone technology,第二代无线通信技术)信号、3G(3-Generation wireless telephone technology,第三代无线通信技术)信号、4G(4-Generation wireless telephone technology,第四代无线通信技术)信号或5G(5-Generation wireless telephone technology,第五代无线通信技术)信号。所述电路可以为储能电路、振荡器电路、谐振电路或者其中信号耦合是关注点的任何其他类型的电路。所述第一电感22和所述第二电感23可应用于同一电路中的不同位置,也可应用于不同电路中。包括所述第一电感22的电路所配置的信号与包括所述第二电感23的电路所配置的信号可以是相同的、也可以是不同的,可以是相互配合工作的、也可以是相互独立工作的。The two inductors (22, 23) can be applied to a circuit for configuring a radio frequency signal. The radio frequency signal may include, but is not limited to, a Wireless-Fidelity (Wi-Fi) signal, a Bluetooth signal, a Global Navigation Satellite System (GNSS) signal, and 2G (2-Generation wireless telephone technology, 2nd). Generation of wireless communication technology) signal, 3G (3-Generation wireless telephone technology) signal, 4G (4-Generation wireless telephone technology) signal or 5G (5-Generation wireless telephone) Technology, the fifth generation of wireless communication technology) signals. The circuit can be a tank circuit, an oscillator circuit, a resonant circuit, or any other type of circuit in which signal coupling is a concern. The first inductor 22 and the second inductor 23 can be applied to different positions in the same circuit, and can also be applied to different circuits. The signal configured by the circuit including the first inductor 22 and the signal configured by the circuit including the second inductor 23 may be the same or different, may cooperate with each other, or may be independent of each other. work.
一种实施方式中,请一并参阅图1,所述芯片100还包括罩体4。所述罩体4盖设在所述裸芯片2远离所述基板1的一侧。所述罩体4与所述基板1相盖合,以围设出收容空间40。所述裸芯片收容于所述收容空间40。所述罩体4可采用金属材料,以实现电磁屏蔽。所述罩体4与所述裸芯片3之间通过第一胶体5相固定。所述裸芯片3与所述基板1之间还设有第二胶体6。所述第二胶体6采用“非接触喷射式”点胶方式等底部填充方式成型。所述第二胶体6包围所述焊球组3。所述芯片100还包括球栅阵列(Ball Grid Array,BGA) 7。所述球栅阵列7形成在所述基板1远离所述裸芯片的一侧。In one embodiment, referring to FIG. 1 together, the chip 100 further includes a cover 4 . The cover 4 is disposed on a side of the bare chip 2 away from the substrate 1 . The cover 4 is covered with the substrate 1 to surround the receiving space 40. The bare chip is received in the receiving space 40. The cover 4 may be made of a metal material to achieve electromagnetic shielding. The cover 4 and the bare chip 3 are fixed by the first colloid 5 . A second colloid 6 is further disposed between the bare chip 3 and the substrate 1. The second colloid 6 is formed by an underfill method such as a "non-contact jet type" dispensing method. The second colloid 6 surrounds the solder ball set 3. The chip 100 also includes a Ball Grid Array (BGA) 7. The ball grid array 7 is formed on a side of the substrate 1 away from the bare chip.
其中,请一并参阅图2和图3,所述裸芯片2包括衬底和形成在所述衬底上的电路走线层。所述第一电感22、所述第二电感23及所述第一导电部21形成在所述电路走线层中。电路走线层朝向所述基板1的一侧铺设有阻焊层。一种实施方式中,所述第一导电部21形成在最靠近所述阻焊层的表层走线层中,所述阻焊层正对所述第一导电部21的部分区域设置开窗,使得所述第一导体部21的部分区域经所述开窗暴露出来形成焊盘,所述第一焊球31和所述第二焊球32连接对应焊盘,从而与所述第一导电部21连接。另一种实施方式中,所述第一导电部21形成在远离所述阻焊层的内层走线层中,靠近所述阻焊层的表层走线层中设置有焊盘,焊盘与所述第一导体部21之间通过多个连接孔(内设导电材料)连接,所述阻焊层正对焊盘的区域镂空设置,使得所述第一焊球31和所述第二焊球32能够通过连接对应焊盘连接至所述第一导体部21。Referring to FIG. 2 and FIG. 3 together, the bare chip 2 includes a substrate and a circuit trace layer formed on the substrate. The first inductor 22, the second inductor 23, and the first conductive portion 21 are formed in the circuit trace layer. A solder resist layer is laid on a side of the circuit trace layer toward the substrate 1. In one embodiment, the first conductive portion 21 is formed in a surface trace layer closest to the solder resist layer, and the solder resist layer is fenestrated to a portion of the first conductive portion 21, Forming a partial region of the first conductor portion 21 through the fenestration to form a pad, and the first solder ball 31 and the second solder ball 32 are connected to the corresponding pad, thereby being connected to the first conductive portion 21 connections. In another embodiment, the first conductive portion 21 is formed in an inner wiring layer away from the solder resist layer, and a pad is disposed in a surface trace layer adjacent to the solder resist layer, and the pad is The first conductor portions 21 are connected by a plurality of connection holes (with a conductive material), and the solder resist layer is disposed to be hollowed out to the area of the pads, so that the first solder balls 31 and the second solder are The ball 32 can be connected to the first conductor portion 21 by connecting corresponding pads.
所述基板1为电路板。所述基板1包括层叠的多层导体层。所述基板1朝向所述裸芯片2的一侧铺设有绝缘的保护层。一种实施方式中,所述第二导电部11形成在最靠近所述保护层的表层导体层中,所述保护层正对所述第二导电部11的部分区域设置开窗,使得所述第二导电部11的部分区域经所述开窗暴露出来形成焊盘,所述第一焊球31和所述第二焊球32连接对应焊盘,从而与所述第二导电部11连接。另一种实施方式中,所述第二导电部11形成在远离所述保护层的内层导体层中,靠近所述保护层的表层导体层中设置有焊盘,焊盘与所述第二导电部11之间通过多个贯孔(内设导电材料)连接,所述保护层正对焊盘的区域镂空设置,使得所述第一焊球31和所述第二焊球32能够通过连接对应焊盘连接至所述第二导电部11。The substrate 1 is a circuit board. The substrate 1 includes a laminated multilayer conductor layer. The substrate 1 is coated with an insulating protective layer on one side of the bare chip 2 . In one embodiment, the second conductive portion 11 is formed in a surface conductor layer closest to the protective layer, and the protective layer is fenestrated to a partial region of the second conductive portion 11 such that the A portion of the second conductive portion 11 is exposed through the fenestration to form a pad, and the first solder ball 31 and the second solder ball 32 are connected to the corresponding pad to be connected to the second conductive portion 11. In another embodiment, the second conductive portion 11 is formed in an inner conductor layer away from the protective layer, and a pad, a pad and the second are disposed in a surface conductor layer adjacent to the protective layer. The conductive portions 11 are connected by a plurality of through holes (with a conductive material), and the protective layer is hollowed out to the area of the pads so that the first solder balls 31 and the second solder balls 32 can be connected A corresponding pad is connected to the second conductive portion 11.
其中,所述焊球组3可采用锡材料。例如,所述焊球组3可采用包括铜元素或铝元素中至少一者的锡合金。Wherein, the solder ball group 3 can be made of tin material. For example, the solder ball group 3 may employ a tin alloy including at least one of a copper element or an aluminum element.
一种实施方式中,请一并参阅图2、图3以及图11,所述裸芯片2具有朝向所述基板1的连接表面24。所述两个电感(22、23)的中心点的连线为第一连线20。所述第一焊球31的中心点与所述第二焊球32的中心点的连线为第二连线30。如图11所示,所述第一连线20在所述连接表面24上的正投影与所述第二连线30在所述连接表面24上的正投影相交。此时,所述闭合环路10位于所述第一电感22与所述第二电感23之间较中间的区域,所述闭合环路10能够抵消更多磁力线,隔离度更高。In one embodiment, referring to FIG. 2, FIG. 3 and FIG. 11, the bare chip 2 has a connection surface 24 facing the substrate 1. The line connecting the center points of the two inductors (22, 23) is the first line 20. A line connecting the center point of the first solder ball 31 and the center point of the second solder ball 32 is a second connection line 30. As shown in FIG. 11, the orthographic projection of the first line 20 on the attachment surface 24 intersects the orthographic projection of the second line 30 on the attachment surface 24. At this time, the closed loop 10 is located in a middle area between the first inductor 22 and the second inductor 23, and the closed loop 10 can cancel more magnetic lines of force, and the isolation is higher.
其中,所述第一连线20可穿过所述闭合环路10,以使所述闭合环路10的隔离效果更佳。Wherein, the first connection 20 can pass through the closed loop 10 to better isolate the closed loop 10.
其中,如图3和图11所示,所述第一连线20在所述连接表面24上的正投影穿过所述第二连线30在所述连接表面24上的正投影的中心。此时,所述闭合环路10位于所述第一电感22与所述第二电感23之间的正中区域,所述闭合环路10的隔离效果更佳。Therein, as shown in FIGS. 3 and 11, the orthographic projection of the first wire 20 on the attachment surface 24 passes through the center of the orthographic projection of the second wire 30 on the attachment surface 24. At this time, the closed loop 10 is located in a middle area between the first inductor 22 and the second inductor 23, and the closed loop 10 has a better isolation effect.
当然,在其他实施方式中,如图12所示,所述第一连线20在所述连接表面24上的正投影与所述第二连线30在所述连接表面24上的正投影不相交。此时,所述闭合环路10位于所述第一电感22与所述第二电感23之间较边缘的区域,所述闭合环路10能够抵消磁力线的磁力线较少,隔离度效果较差。Of course, in other embodiments, as shown in FIG. 12, the orthographic projection of the first connection 20 on the connecting surface 24 and the orthographic projection of the second connection 30 on the connecting surface 24 are not intersect. At this time, the closed loop 10 is located at a region between the first inductor 22 and the second inductor 23, and the closed loop 10 can cancel the magnetic lines of force of the magnetic lines of force and the isolation effect is poor.
一种实施方式中,请一并参阅图3和图11,所述第一连线20在所述连接表面24上的 正投影垂直于所述第二连线30在所述连接表面24上的正投影。此时,所述第一电感22和所述第二电感23大致对称地排布在所述闭合环路10的两侧,使得所述闭合环路10能够抵消更多磁力线,隔离度更高,且对所述第一电感22和所述第二电感23的电感量及Q值得影响更小。In one embodiment, referring to FIG. 3 and FIG. 11 , the orthographic projection of the first connection 20 on the connecting surface 24 is perpendicular to the second connection 30 on the connecting surface 24 . Orthographic projection. At this time, the first inductor 22 and the second inductor 23 are arranged substantially symmetrically on both sides of the closed loop 10, so that the closed loop 10 can cancel more magnetic lines of force and have higher isolation. Moreover, the inductance and the Q value of the first inductor 22 and the second inductor 23 are less affected.
一种实施方式中,请一并参阅图3和图7,所述第一焊球31和所述第二焊球32沿第一方向X排布。所述第一焊球31与所述第二焊球32之间的间距为第一长度L1。所述第一焊球31与所述第二焊球32之间的间距为所述第一焊球31的外轮廓与所述第二焊球32的外轮廓之间的最小距离。所述两个电感(22、23)为第一电感22和第二电感23。所述第一电感22在所述第一方向X的长度为第二长度L2。所述第二电感23在所述第一方向X的长度为第三长度L3。所述第二长度L2大于等于所述第三长度L3。所述第一长度L1与所述第二长度L2的比在0.75至1.25的范围内。In one embodiment, referring to FIG. 3 and FIG. 7, the first solder ball 31 and the second solder ball 32 are arranged along the first direction X. The distance between the first solder ball 31 and the second solder ball 32 is a first length L1. The spacing between the first solder ball 31 and the second solder ball 32 is the minimum distance between the outer contour of the first solder ball 31 and the outer contour of the second solder ball 32. The two inductors (22, 23) are a first inductor 22 and a second inductor 23. The length of the first inductor 22 in the first direction X is a second length L2. The length of the second inductor 23 in the first direction X is a third length L3. The second length L2 is greater than or equal to the third length L3. The ratio of the first length L1 to the second length L2 is in the range of 0.75 to 1.25.
在本实施方式中,所述第一长度L1与所述第二长度L2的比在0.75至1.25的范围内时,也即所述闭合环路10的长度与所述两个电感(22、23)中长度较长的电感的长度差不多时,所述闭合环路10的隔离效果较佳,能够有效地对所述两个电感(22、23)起到隔离作用。In this embodiment, when the ratio of the first length L1 to the second length L2 is in the range of 0.75 to 1.25, that is, the length of the closed loop 10 and the two inductors (22, 23) When the length of the long-length inductor is about the same, the closed loop 10 has a better isolation effect, and can effectively isolate the two inductors (22, 23).
一种实施方式中,请一并参阅图3和图7,所述第一长度L1等于所述第二长度L2。此时,所述闭合环路10的长度与所述两个电感(22、23)中长度较长的电感的长度等长,所述闭合环路10能够更好地降低所述第一电感22与所述第二电感23之间的耦合度,所述闭合环路10的隔离效果好。In one embodiment, please refer to FIG. 3 and FIG. 7 together, the first length L1 is equal to the second length L2. At this time, the length of the closed loop 10 is equal to the length of the longer length of the two inductors (22, 23), and the closed loop 10 can better reduce the first inductance 22 The degree of coupling between the second inductor 23 and the closed loop 10 is good.
例如,所述第二长度L2为0.23mm(毫米),所述第一长度L1处于0.17mm至0.29mm范围内。通过实验可知,在频率为10GHz时,当所述第一长度L1在0.17mm至0.23mm范围内时,隔离度随所述第一长度L1的增加递增;当所述第一长度L1在0.23mm至0.29mm范围内时,隔离度随所述第一长度L1的增加递减;当第一长度L1在0.17mm至0.29mm范围内时,隔离度大致处于69至70.5的范围内,隔离度数值较高。For example, the second length L2 is 0.23 mm (mm), and the first length L1 is in the range of 0.17 mm to 0.29 mm. It can be seen from experiments that at a frequency of 10 GHz, when the first length L1 is in the range of 0.17 mm to 0.23 mm, the isolation increases with the increase of the first length L1; when the first length L1 is 0.23 mm When the range is up to 0.29mm, the isolation decreases with the increase of the first length L1; when the first length L1 is in the range of 0.17mm to 0.29mm, the isolation is approximately in the range of 69 to 70.5, and the isolation value is higher. high.
可以理解的是,本申请中不对所述第一电感22的位置和所述第二电感23的位置作出严格限定,所述第一电感22和所述第二电感23的位置是可以互相调换的。It can be understood that the position of the first inductor 22 and the position of the second inductor 23 are not strictly defined in the present application, and the positions of the first inductor 22 and the second inductor 23 are mutually interchangeable. .
一种实施方式中,请一并参阅图3和图7,所述第一导电部21呈条形,所述第一导电部21的延伸方向与所述第一方向X一致。此时,所述第一导电部21可以为形成在所述裸芯片2内的一段金属走线。由于所述第一导电部21的延伸方向与所述第一方向X一致,因此所述第一导电部21长度较短,所述第一导电部21电阻较小,有利于提高所述闭合环路10的敏感度,使得所述闭合环路10的隔离效果更佳。In one embodiment, referring to FIG. 3 and FIG. 7 , the first conductive portion 21 has a strip shape, and the extending direction of the first conductive portion 21 is consistent with the first direction X. At this time, the first conductive portion 21 may be a metal trace formed in the bare chip 2 . Since the extending direction of the first conductive portion 21 is consistent with the first direction X, the length of the first conductive portion 21 is short, and the resistance of the first conductive portion 21 is small, which is advantageous for improving the closed loop. The sensitivity of the road 10 makes the isolation of the closed loop 10 better.
一种实施方式中,请一并参阅图3和图7,所述第一焊球31在第二方向Y上具有第一宽度W1,所述第二方向Y平行于所述裸芯片2且垂直于所述第一方向X。所述第一焊球31的外轮廓在所述第二方向Y上最大的尺寸为所述第一宽度W1。所述第一焊球31大致呈球形时,所述第一宽度W1为所述第一焊球31的直径。所述第二焊球32在所述第二方向Y上的宽度等于所述第一宽度W1。所述第一导电部21在所述第二方向Y具有第二宽度W2。所述第二宽度W2与所述第一宽度W1的比大于等于0.75。其中,所述第一焊球31的外轮廓与所述第二焊球32的外轮廓相同或非常相似。由于制造工艺上的误差,所述第二焊球32 在所述第二方向Y上的宽度与所述第一宽度W1有微小偏差时,也认为所述第二焊球32在所述第二方向Y上的宽度等于所述第一宽度W1。In one embodiment, referring to FIG. 3 and FIG. 7, the first solder ball 31 has a first width W1 in the second direction Y, and the second direction Y is parallel to the bare chip 2 and vertical. In the first direction X. The largest dimension of the outer contour of the first solder ball 31 in the second direction Y is the first width W1. When the first solder ball 31 is substantially spherical, the first width W1 is the diameter of the first solder ball 31. The width of the second solder ball 32 in the second direction Y is equal to the first width W1. The first conductive portion 21 has a second width W2 in the second direction Y. The ratio of the second width W2 to the first width W1 is greater than or equal to 0.75. The outer contour of the first solder ball 31 is the same as or very similar to the outer contour of the second solder ball 32. The second solder ball 32 is also considered to be in the second when the width of the second solder ball 32 in the second direction Y is slightly different from the first width W1 due to an error in manufacturing process. The width in the direction Y is equal to the first width W1.
在本实施方式中,所述第二宽度W2与所述第一宽度W1的比大于等于0.75时,也即所述第一导电部21的宽度与所述第一焊球31的宽度、所述第二焊球32的宽度差不多时,所述闭合环路10的隔离效果较佳,能够有效地对所述两个电感(22、23)起到隔离作用。In this embodiment, when the ratio of the second width W2 to the first width W1 is greater than or equal to 0.75, that is, the width of the first conductive portion 21 and the width of the first solder ball 31, When the width of the second solder ball 32 is similar, the closed loop 10 has a better isolation effect, and can effectively isolate the two inductors (22, 23).
一种实施方式中,请一并参阅图3和图7,所述第二宽度W2等于所述第一宽度W1。此时,所述第一导电部21的宽度与所述第一焊球31的宽度、所述第二焊球32的宽度相同,既可以节约所述第一导电部21的材料,并且所述闭合环路10也能够很好地降低所述第一电感22与所述第二电感23之间的耦合度,所述闭合环路10的隔离效果好。In one embodiment, please refer to FIG. 3 and FIG. 7 together, the second width W2 is equal to the first width W1. At this time, the width of the first conductive portion 21 is the same as the width of the first solder ball 31 and the width of the second solder ball 32, which can save the material of the first conductive portion 21, and the The closed loop 10 can also well reduce the degree of coupling between the first inductor 22 and the second inductor 23, and the closed loop 10 has a good isolation effect.
例如,所述第一焊球31的所述第一宽度W1为80um,所述第二宽度W2大于等于60um。通过实验可知,在频率为10GHz时,当所述第二宽度W2大于等于60um时,隔离度大于等于70.1;随所述第二宽度W2的增加,隔离度能够从70.1增加到70.5,隔离度数值处于较高范围内;所述第二宽度W2等于80um时,隔离度增加到70.5;所述第二宽度W2大于80um后,隔离度不再随着所述第二宽度W2的增加而变化。For example, the first width W1 of the first solder ball 31 is 80 um, and the second width W2 is 60 um or more. It can be seen from experiments that when the frequency is 10 GHz, when the second width W2 is greater than or equal to 60 um, the isolation is greater than or equal to 70.1; as the second width W2 increases, the isolation can be increased from 70.1 to 70.5, and the isolation value is In the higher range; when the second width W2 is equal to 80um, the isolation is increased to 70.5; after the second width W2 is greater than 80um, the isolation is no longer changed as the second width W2 increases.
一种实施方式中,所述第一焊球31和所述第二焊球32的高度为85um。本申请中不对所述第一焊球31和所述第二焊球32的长度作出具体限定。本申请中也不对所述第一电感22和所述第二电感23之间的间距作出具体限定。In one embodiment, the height of the first solder ball 31 and the second solder ball 32 is 85 um. The lengths of the first solder ball 31 and the second solder ball 32 are not specifically limited in the present application. The spacing between the first inductor 22 and the second inductor 23 is also not specifically defined in the present application.
一种实施方式中,请一并参阅图3和图7,所述第二导电部11呈条形。所述第二导电部11的延伸方向与所述第一方向X一致。此时,所述第二导电部11可以为形成在所述基板1内的一段金属走线。由于所述第二导电部11的延伸方向与所述第一方向X一致,因此所述第二导电部11长度较短,所述第二导电部11电阻较小,有利于提高所述闭合环路10的敏感度,使得所述闭合环路10的隔离效果更佳。In one embodiment, referring to FIG. 3 and FIG. 7 together, the second conductive portion 11 has a strip shape. The extending direction of the second conductive portion 11 coincides with the first direction X. At this time, the second conductive portion 11 may be a metal trace formed in the substrate 1. Since the extending direction of the second conductive portion 11 is consistent with the first direction X, the second conductive portion 11 has a short length, and the second conductive portion 11 has a small resistance, which is advantageous for improving the closed loop. The sensitivity of the road 10 makes the isolation of the closed loop 10 better.
其中,请一并参阅图3和图7,所述第二导电部11在所述第二方向Y上具有第三宽度W3,所述第三宽度W3大于等于所述第二宽度W2。例如,所述第三宽度W3等于所述第二宽度W2。此时,所述闭合环路10的隔离效果较佳,能够有效地对所述两个电感(22、23)起到隔离作用。Referring to FIG. 3 and FIG. 7 together, the second conductive portion 11 has a third width W3 in the second direction Y, and the third width W3 is greater than or equal to the second width W2. For example, the third width W3 is equal to the second width W2. At this time, the isolation loop 10 has a better isolation effect, and can effectively isolate the two inductors (22, 23).
当然,在其他实施方式中,所述第二导电部11也可以呈其他形状,如方形、圆形等。Of course, in other embodiments, the second conductive portion 11 may also have other shapes, such as a square shape, a circular shape, or the like.
一种实施方式中,请一并参阅图8,所述焊球组3还包括第三焊球33。所述第三焊球33与所述第一焊球31及所述第二焊球32排布在同一方向上(例如所述第一方向X),且所述第三焊球33位于所述第一焊球31与所述第二焊球32之间。所述第三焊球33连接所述第一导电部21和所述第二导电部11。In one embodiment, referring to FIG. 8 together, the solder ball set 3 further includes a third solder ball 33. The third solder ball 33 is arranged in the same direction as the first solder ball 31 and the second solder ball 32 (for example, the first direction X), and the third solder ball 33 is located in the The first solder ball 31 is between the second solder ball 32. The third solder ball 33 connects the first conductive portion 21 and the second conductive portion 11 .
在本实施方式中,由于所述第一导电部21与所述第二导电部11之间连接有所述第一焊球31、所述第二焊球32及所述第三焊球33,因此所述闭合环路10内形成了多个并联小环路,使得所述闭合环路10的对所述第一电感22和所述第二电感23的隔离效果更佳。In the embodiment, the first solder ball 31, the second solder ball 32, and the third solder ball 33 are connected between the first conductive portion 21 and the second conductive portion 11 . Therefore, a plurality of parallel small loops are formed in the closed loop 10, so that the isolation effect of the closed loop 10 on the first inductor 22 and the second inductor 23 is better.
当然,在其他实施方式中,所述第三焊球33的数量可以有多个。多个所述第三焊球33排布在所述第一焊球31与所述第二焊球32之间。其中,本申请中“多个”是指至少两个。Of course, in other embodiments, the number of the third solder balls 33 may be plural. A plurality of the third solder balls 33 are arranged between the first solder balls 31 and the second solder balls 32. In the present application, "a plurality" means at least two.
一种实施方式中,请一并参阅图9,所述第一电感22包括上层电感221、下层电感222 及多个导电柱223。所述上层电感221与所述下层电感222间隔地层叠设置,所述多个导电柱223连接在所述上层电感221与所述下层电感222之间。此时,所述第一电感22厚度较大,从而增加所述第一电感22的Q值。In one embodiment, referring to FIG. 9 , the first inductor 22 includes an upper layer inductor 221 , a lower layer inductor 222 , and a plurality of conductive pillars 223 . The upper layer inductor 221 is stacked and spaced apart from the lower layer inductor 222 , and the plurality of conductive pillars 223 are connected between the upper layer inductor 221 and the lower layer inductor 222 . At this time, the first inductor 22 has a large thickness, thereby increasing the Q value of the first inductor 22.
其中,请一并参阅图2和图9,所述上层电感221或所述下层电感222与所述第一导电部21同层设置。此时,所述第一电感22和所述第一导电部21的制备过程集成在所述裸芯片2的成型过程中,且所述第一导电部21能够在所述第一电感22的制作工序中同步成型,从而简化了所述裸芯片2的制作工序,降低了所述裸芯片2的成本。Referring to FIG. 2 and FIG. 9 together, the upper layer inductor 221 or the lower layer inductor 222 is disposed in the same layer as the first conductive portion 21. At this time, the preparation process of the first inductor 22 and the first conductive portion 21 is integrated in the molding process of the bare chip 2, and the first conductive portion 21 can be fabricated in the first inductor 22. Synchronous molding in the process simplifies the manufacturing process of the bare chip 2 and reduces the cost of the bare chip 2.
当然,在其他实施方式中,所述第一电感22还可包括其他电感层,其他电感层通过导电柱与所述上层电感221或所述下层电感222连接。所述第一导电部21也可包括多层导电走线。多层导电层的成型过程集成在所述第一电感22的制备过程中。当然,所述第一导电部21的成型过程也可独立于所述第一电感22的制备过程。Of course, in other embodiments, the first inductor 22 may further include other inductor layers, and the other inductor layers are connected to the upper layer inductor 221 or the lower layer inductor 222 through the conductive pillars. The first conductive portion 21 may also include multiple layers of conductive traces. The molding process of the multilayer conductive layer is integrated in the preparation process of the first inductor 22. Of course, the molding process of the first conductive portion 21 can also be independent of the preparation process of the first inductor 22.
其中,一种实施例中,如图7所示,所述第一电感22采用差分结构,所述第一电感22左右对称。所述第一电感22的左下角和右下角分别为输入/输出端口,中间的位置是接地端口(可根据需要接地,也可以悬空)。In one embodiment, as shown in FIG. 7 , the first inductor 22 adopts a differential structure, and the first inductor 22 is bilaterally symmetric. The lower left corner and the lower right corner of the first inductor 22 are respectively input/output ports, and the middle position is a ground port (can be grounded as needed or suspended).
一种实施方式中,请一并参阅图2和图9,所述第二电感23采用与所述第一电感22相同或相似的结构。换言之,所述第二电感23同样包括多层电感,多层电感之间通过导电柱电连接。所述第二电感23与所述第一电感22同层设置,使得所述第二电感23与所述第一电感22在相同的工序中成型,降低所述裸芯片2的成本。当然,在其他实施方式中,所述第二电感23与所述第一电感22也可排布在不同的走线层中。In one embodiment, please refer to FIG. 2 and FIG. 9 together, and the second inductor 23 adopts the same or similar structure as the first inductor 22. In other words, the second inductor 23 also includes a plurality of layers of inductance, and the multilayer inductors are electrically connected through the conductive columns. The second inductor 23 is disposed in the same layer as the first inductor 22, so that the second inductor 23 and the first inductor 22 are formed in the same process, and the cost of the bare chip 2 is reduced. Of course, in other embodiments, the second inductor 23 and the first inductor 22 may also be arranged in different routing layers.
可以理解的是,由于所述裸芯片2的电路走线层的总体厚度(在厚度方向Z上的尺寸,厚度方向Z如图2和图3所示,厚度方向Z垂直于所述第一方向X和所述第二方向Y)是很薄的(微米级别),当所述第一电感22和所述第二电感23位于所述闭合环路10的两侧时,所述闭合环路10能够对处于任意走线层的所述第一电感22和所述第二电感23起到良好的隔离作用,因此本申请并不严格限定所述第一导电层21、所述第一电感22及所述第二电感23所排布走线层之间的位置关系,三者所在的走线层可以是同层排布、也可以是不同层排布。It can be understood that, due to the overall thickness of the circuit trace layer of the bare chip 2 (the dimension in the thickness direction Z, the thickness direction Z is as shown in FIGS. 2 and 3, the thickness direction Z is perpendicular to the first direction X and the second direction Y) are very thin (micron level), when the first inductance 22 and the second inductance 23 are located on both sides of the closed loop 10, the closed loop 10 The first inductor 22 and the second inductor 23 in any of the trace layers can be well insulated. Therefore, the first conductive layer 21 and the first inductor 22 are not strictly defined in the present application. The second inductor 23 is arranged in a positional relationship between the trace layers, and the trace layers in which the three are located may be arranged in the same layer or in different layers.
请一并参阅图10,本申请实施方式还提供一种通信设备200。所述通信设备200包括壳体300、电路板400及芯片100。所述芯片100采用上述实施例中所描述的芯片。所述电路板400收容于所述壳体300内部。所述芯片100固定于所述电路板400且电性连接所述电路板400。由于所述芯片100能够改善相邻电感之间的串扰问题,所述芯片100能够更高质量地处理和传输信号,因此应用所述芯片100的所述通信设备200的性能较佳。所述通信设备200包括但不限于手机、平板电脑、通信基站等。Referring to FIG. 10 together, the embodiment of the present application further provides a communication device 200. The communication device 200 includes a housing 300, a circuit board 400, and a chip 100. The chip 100 employs the chip described in the above embodiments. The circuit board 400 is housed inside the housing 300. The chip 100 is fixed to the circuit board 400 and electrically connected to the circuit board 400. Since the chip 100 can improve the crosstalk problem between adjacent inductors, the chip 100 can process and transmit signals with higher quality, and thus the performance of the communication device 200 to which the chip 100 is applied is better. The communication device 200 includes, but is not limited to, a mobile phone, a tablet, a communication base station, and the like.
以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以所述权利要求的保护范围为准。The foregoing is only a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present application. It should be covered by the scope of protection of this application. Therefore, the scope of protection of the present application should be determined by the scope of the claims.

Claims (12)

  1. 一种芯片,其特征在于,包括基板、裸芯片及焊接在所述基板与所述裸芯片之间的焊球组,所述焊球组包括间隔排布的第一焊球和第二焊球,所述裸芯片上布设有连接所述第一焊球与所述第二焊球的第一导电部,所述基板上布设有连接所述第一焊球与所述第二焊球的第二导电部,所述第一焊球、所述第一导电部、所述第二焊球及所述第二导电部形成闭合环路,所述裸芯片还包括两个电感,所述两个电感分布在所述闭合环路的两侧。A chip, comprising: a substrate, a bare chip, and a solder ball group soldered between the substrate and the bare chip, the solder ball group comprising a first solder ball and a second solder ball arranged at intervals a first conductive portion connecting the first solder ball and the second solder ball is disposed on the bare chip, and the substrate is provided with a first electrode connecting the first solder ball and the second solder ball a second conductive portion, the first solder ball, the first conductive portion, the second solder ball, and the second conductive portion form a closed loop, and the bare chip further includes two inductors, the two The inductance is distributed on both sides of the closed loop.
  2. 根据权利要求1所述的芯片,其特征在于,所述裸芯片具有朝向所述基板的连接表面,所述两个电感的中心点的连线为第一连线,所述第一焊球的中心点与所述第二焊球的中心点的连线为第二连线,所述第一连线在所述连接表面上的正投影与所述第二连线在所述连接表面上的正投影相交。The chip according to claim 1, wherein the bare chip has a connection surface facing the substrate, and a line connecting the center points of the two inductors is a first connection, the first solder ball a line connecting the center point to a center point of the second solder ball is a second line, an orthographic projection of the first line on the connecting surface and the second line on the connecting surface The orthographic projections intersect.
  3. 根据权利要求2所述的芯片,其特征在于,所述第一连线在所述连接表面上的正投影垂直于所述第二连线在所述连接表面上的正投影。The chip of claim 2 wherein an orthographic projection of said first line on said connecting surface is perpendicular to an orthographic projection of said second line on said connecting surface.
  4. 根据权利要求1至3任一项所述的芯片,其特征在于,所述第一焊球和所述第二焊球沿第一方向排布,所述第一焊球与所述第二焊球之间的间距为第一长度,所述两个电感为第一电感和第二电感,所述第一电感在所述第一方向的长度为第二长度,所述第二电感在所述第一方向的长度为第三长度,所述第二长度大于等于所述第三长度,所述第一长度与所述第二长度的比在0.75至1.25的范围内。The chip according to any one of claims 1 to 3, wherein the first solder ball and the second solder ball are arranged in a first direction, the first solder ball and the second solder The distance between the balls is a first length, the two inductors are a first inductor and a second inductor, the length of the first inductor in the first direction is a second length, and the second inductor is in the The length of the first direction is a third length, the second length is greater than or equal to the third length, and a ratio of the first length to the second length is in a range of 0.75 to 1.25.
  5. 根据权利要求4所述的芯片,其特征在于,所述第一长度等于所述第二长度。The chip of claim 4 wherein said first length is equal to said second length.
  6. 根据权利要求4所述的芯片,其特征在于,所述第一导电部呈条形,所述第一导电部的延伸方向与所述第一方向一致。The chip according to claim 4, wherein the first conductive portion has a strip shape, and the extending direction of the first conductive portion coincides with the first direction.
  7. 根据权利要求6所述的芯片,其特征在于,所述第一焊球在第二方向上具有第一宽度,所述第二方向平行于所述裸芯片且垂直于所述第一方向,所述第二焊球在所述第二方向上的宽度等于所述第一宽度,所述第一导电部在所述第二方向具有第二宽度,所述第二宽度与所述第一宽度的比大于等于0.75。The chip according to claim 6, wherein said first solder ball has a first width in a second direction, said second direction being parallel to said bare chip and perpendicular to said first direction The width of the second solder ball in the second direction is equal to the first width, the first conductive portion has a second width in the second direction, and the second width is different from the first width The ratio is greater than or equal to 0.75.
  8. 根据权利要求7中所述的芯片,其特征在于,所述第二宽度等于所述第一宽度。The chip of claim 7 wherein said second width is equal to said first width.
  9. 根据权利要求7或8中所述的芯片,其特征在于,所述第二导电部呈条形,所述第二导电部的延伸方向与所述第一方向一致,所述第二导电部在所述第二方向上具有第三宽度,所述第三宽度大于等于所述第二宽度。The chip according to claim 7 or 8, wherein the second conductive portion has a strip shape, the extending direction of the second conductive portion is consistent with the first direction, and the second conductive portion is The second direction has a third width, and the third width is greater than or equal to the second width.
  10. 根据权利要求4所述的芯片,其特征在于,所述焊球组还包括第三焊球,所述第三焊球与所述第一焊球及所述第二焊球排布在同一方向上,且所述第三焊球位于所述第一焊球与所述第二焊球之间,所述第三焊球连接所述第一导电部和所述第二导电部。The chip according to claim 4, wherein the solder ball set further comprises a third solder ball, the third solder ball being arranged in the same direction as the first solder ball and the second solder ball And the third solder ball is located between the first solder ball and the second solder ball, and the third solder ball connects the first conductive portion and the second conductive portion.
  11. 根据权利要求1至10任一项所述的芯片,其特征在于,所述第一电感包括上层电感、下层电感及多个导电柱,所述上层电感与所述下层电感间隔地层叠设置,所述多个导电柱连接在所述上层电感与所述下层电感之间,所述上层电感或所述下层电感与所述第一导电部同层设置。The chip according to any one of claims 1 to 10, wherein the first inductor comprises an upper layer inductor, a lower layer inductor and a plurality of conductive pillars, and the upper layer inductor is stacked and spaced apart from the lower layer inductor. The plurality of conductive pillars are connected between the upper layer inductor and the lower layer inductor, and the upper layer inductor or the lower layer inductor is disposed in the same layer as the first conductive portion.
  12. 一种通信设备,其特征在于,包括壳体、电路板及权利要求1至11中任一项所述的芯片,所述电路板收容于所述壳体内部,所述芯片固定于所述电路板且电性连接所述电路板。A communication device, comprising: a housing, a circuit board, and the chip according to any one of claims 1 to 11, wherein the circuit board is housed inside the housing, and the chip is fixed to the circuit The board is electrically connected to the circuit board.
PCT/CN2019/078567 2018-04-09 2019-03-18 Chip and communication device WO2019196600A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810312010.7A CN110364510B (en) 2018-04-09 2018-04-09 Chip and communication device
CN201810312010.7 2018-04-09

Publications (1)

Publication Number Publication Date
WO2019196600A1 true WO2019196600A1 (en) 2019-10-17

Family

ID=68163074

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/078567 WO2019196600A1 (en) 2018-04-09 2019-03-18 Chip and communication device

Country Status (2)

Country Link
CN (1) CN110364510B (en)
WO (1) WO2019196600A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1938850A (en) * 2004-02-24 2007-03-28 高通股份有限公司 Optimized power delivery to high speed, high pin-count devices
CN103379733A (en) * 2012-04-23 2013-10-30 佳能株式会社 Printed wiring board, semiconductor package, and printed circuit board
US20170098603A1 (en) * 2015-10-02 2017-04-06 Avago Technologies General Ip (Singapore) Pte. Ltd. An isolation device
CN106935572A (en) * 2015-09-29 2017-07-07 飞思卡尔半导体公司 The method for improving the BGA package isolation in radio frequency and millimeter wave product

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7173498B2 (en) * 2004-09-28 2007-02-06 Texas Instruments Incorporated Reducing the coupling between LC-oscillator-based phase-locked loops in flip-chip ASICs
TWI619234B (en) * 2015-10-30 2018-03-21 瑞昱半導體股份有限公司 Integrated circuit
CN108878399B (en) * 2017-05-08 2020-12-22 瑞昱半导体股份有限公司 Electronic device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1938850A (en) * 2004-02-24 2007-03-28 高通股份有限公司 Optimized power delivery to high speed, high pin-count devices
CN103379733A (en) * 2012-04-23 2013-10-30 佳能株式会社 Printed wiring board, semiconductor package, and printed circuit board
CN106935572A (en) * 2015-09-29 2017-07-07 飞思卡尔半导体公司 The method for improving the BGA package isolation in radio frequency and millimeter wave product
US20170098603A1 (en) * 2015-10-02 2017-04-06 Avago Technologies General Ip (Singapore) Pte. Ltd. An isolation device

Also Published As

Publication number Publication date
CN110364510A (en) 2019-10-22
CN110364510B (en) 2021-04-20

Similar Documents

Publication Publication Date Title
JP6912976B2 (en) Inductor parts
KR101776821B1 (en) Redirection of electromagnetic signals using substrate structures
US11804326B2 (en) Coil component, method of making the same, and power supply circuit unit
KR101541570B1 (en) Coil Parts And Method of Manufacturing The Same
JP5776868B1 (en) ANTENNA DEVICE AND ELECTRONIC DEVICE
TW201724926A (en) Low-profile package with passive device
US9713259B2 (en) Communication module
US8994153B2 (en) Semiconductor device having antenna element and method of manufacturing same
TWI394180B (en) Integrated circuit inductor structure, electronic system and method of reducing magnetic coupling between at least two integrated circuit inductors
TWI571047B (en) Lc composite component
US9007146B2 (en) Duplexer
JP5284382B2 (en) Wireless device and wireless device
JPWO2020071493A1 (en) module
US20230253341A1 (en) Circuit module
WO2019196600A1 (en) Chip and communication device
US10950381B2 (en) Surface-mounted LC device
CN114121447B (en) Inductance device and electronic device
TW200419651A (en) High frequency signal transmission structure
CN108022907A (en) Electronic module
JP7414082B2 (en) inductor parts
JP6604496B1 (en) Communication module, electronic device, and method of manufacturing communication module
US20210204456A1 (en) Module
JP5207587B2 (en) Circuit equipment
KR100593959B1 (en) Composite structure for inductor device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19786177

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19786177

Country of ref document: EP

Kind code of ref document: A1