WO2019192240A1 - Émetteur laser, appareil opto-électronique, caméra de profondeur et dispositif électronique - Google Patents

Émetteur laser, appareil opto-électronique, caméra de profondeur et dispositif électronique Download PDF

Info

Publication number
WO2019192240A1
WO2019192240A1 PCT/CN2019/070768 CN2019070768W WO2019192240A1 WO 2019192240 A1 WO2019192240 A1 WO 2019192240A1 CN 2019070768 W CN2019070768 W CN 2019070768W WO 2019192240 A1 WO2019192240 A1 WO 2019192240A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting elements
mask
laser
emitting
Prior art date
Application number
PCT/CN2019/070768
Other languages
English (en)
Chinese (zh)
Inventor
白剑
Original Assignee
Oppo广东移动通信有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oppo广东移动通信有限公司 filed Critical Oppo广东移动通信有限公司
Publication of WO2019192240A1 publication Critical patent/WO2019192240A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0988—Diaphragms, spatial filters, masks for removing or filtering a part of the beam
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/003—Light absorbing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • the present application relates to the field of imaging technologies, and in particular, to a laser transmitter, an optoelectronic device, a depth camera, and an electronic device.
  • the photoelectric device generally comprises a light source, a collimating element and a diffractive optical element, wherein the light source may be a single edge emitting laser light source, or an area array laser light source composed of a plurality of vertical cavity surface emitting lasers.
  • Embodiments of the present application provide a laser emitter, an optoelectronic device, a depth camera, and an electronic device.
  • a laser emitter of an embodiment of the present application includes a light source and a mask disposed on a light-emitting path of the light source, the mask including a plurality of light-transmitting regions; wherein each of the light-transmitting regions has a shape and/or a transparent shape The amount of light is different; or a plurality of the light-transmitting regions are divided into a plurality of groups, and the shape and/or the amount of light transmission of each of the light-transmitting regions are different.
  • the photovoltaic device of the embodiment of the present application includes a substrate and the laser emitter described in the above embodiment, and the laser emitter is disposed on the substrate.
  • the depth camera of the embodiment of the present application includes the optoelectronic device, the image collector, and the processor according to the above embodiments; the image collector is configured to collect a laser pattern projected by the optoelectronic device into the target space; The optoelectronic device and the image collector are coupled, and the processor is configured to process the laser pattern to obtain a depth image.
  • the electronic device of the embodiment of the present application includes a housing and the depth camera described in the above embodiment, the depth camera being disposed in the housing and exposed from the housing to acquire a depth image.
  • FIG. 1 is a schematic structural view of a laser emitter according to some embodiments of the present application.
  • FIG. 2 is a schematic structural view of a mask of a laser emitter according to some embodiments of the present application.
  • FIG. 3 is a schematic structural diagram of an optoelectronic device according to some embodiments of the present application.
  • FIG. 4 is a schematic structural view of a mask of a laser emitter according to some embodiments of the present application.
  • FIG. 5 is a schematic structural view of a light source of a laser emitter according to some embodiments of the present application.
  • FIG. 6 is a schematic structural view of a laser emitter according to some embodiments of the present application.
  • FIG. 7 is a schematic structural view of a laser emitter according to some embodiments of the present application.
  • FIG. 8 is a schematic structural view of a laser emitter according to some embodiments of the present application.
  • FIG. 9 is a schematic structural diagram of an optoelectronic device according to some embodiments of the present application.
  • FIG. 10 is a schematic structural diagram of a depth camera according to some embodiments of the present application.
  • FIG. 11 is a schematic structural diagram of an electronic device according to some embodiments of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” or “second” may include one or more of the described features either explicitly or implicitly.
  • the meaning of "a plurality” is two or more unless specifically and specifically defined otherwise.
  • connection In the description of the embodiments of the present application, it should be noted that the terms “installation”, “connection”, and “connection” are to be understood broadly, and may be fixed connection, for example, or Removable connection, or integral connection; can be mechanical connection, electrical connection or communication with each other; can be direct connection or indirect connection through intermediate medium, can be internal connection of two components or two components Interaction relationship.
  • connection connection
  • the laser emitter 10 of the embodiment of the present application includes a light source 12 and a mask 14 disposed on the light-emitting path of the light source 12.
  • the mask 14 includes a plurality of light transmissive regions 142. The shape and/or the amount of light transmitted by each of the light-transmitting regions 142 are different; or the plurality of light-transmitting regions 142 are divided into a plurality of groups, and the shape and/or the amount of light transmitted by each of the light-transmitting regions 142 are different.
  • the mask 14 further includes an opaque region 144 that is in contact with the plurality of light transmissive regions 142 .
  • the mask 14 is a light transmissive mask 14, and the opaque region 144 is covered with an opaque material; or the mask 14 is an opaque mask 14, and the light transmissive region 142 is a through hole.
  • source 12 is a vertical cavity surface emitting laser.
  • the light source 12 includes a substrate 122 and a light emitting element array 124 disposed on the substrate 122.
  • the array of light-emitting elements 124 includes a plurality of light-emitting elements 1242 that are regularly distributed.
  • the plurality of light-transmitting regions 142 are divided into a plurality of groups, and the plurality of light-emitting elements 1242 are also divided into a plurality of groups, and each of the light-transmitting regions 142 corresponds to a group of light-emitting elements 1242.
  • the plurality of sets of light emitting elements 1242 includes a first set of light emitting elements 1242 and a second set of light emitting elements 1242.
  • the first group of light-emitting elements 1242 are regularly or irregularly distributed, and the second group of light-emitting elements 1242 are regularly or irregularly distributed.
  • each set of light-emitting elements 1242 is used to be driven to emit light beams of different light intensities.
  • each set of light-emitting elements 1242 is used to be driven to emit light beams of different wavelengths.
  • source 12 is an edge emitting laser.
  • the light source 12 includes a light emitting surface 126 that faces the mask 14.
  • the optoelectronic device 100 of the embodiment of the present application includes a substrate 30 and a laser emitter 10.
  • the laser emitter 10 is disposed on the substrate 30.
  • the depth camera 1000 of the embodiment of the present application includes an optoelectronic device 100, an image collector 200, and a processor 300.
  • the image collector 200 is used to capture a laser pattern projected by the optoelectronic device 100 into the target space.
  • the processor 300 is connected to the optoelectronic device 100 and the image collector 200, respectively, and the processor 300 is configured to process the laser pattern to obtain a depth image.
  • the electronic device 2000 of the embodiment of the present application includes a housing 2001 and a depth camera 1000 .
  • the depth camera 1000 is disposed within the housing 2001 and exposed from the housing 2001 to acquire a depth image.
  • the laser emitter 10 of the embodiment of the present application includes a light source 12 and a mask 14 disposed on the light-emitting path of the light source 12.
  • the mask 14 includes a plurality of light transmissive regions 142. Wherein, the shape and/or the amount of light transmission of each of the light-transmitting regions 142 are different; or the plurality of light-transmitting regions 142 are divided into a plurality of groups, and the shape and/or the amount of light transmitted by each of the light-transmitting regions 142 are different (as shown in FIG. 2). Show).
  • the laser emitter 10 of the embodiment of the present application can be used in the photovoltaic device 100.
  • the optoelectronic device 100 includes a substrate 30, a laser emitter 10, a collimating element 50, and a diffractive optical element 70.
  • the light source 12 is disposed on the substrate 30, and the mask 14, the collimating element 50, and the diffractive optical element 70 are sequentially disposed on the light-emitting path of the light source 12.
  • the light source 12 is for emitting laser light
  • the collimating element 50 is for collimating the laser light emitted by the light source 12 and passing through the light transmitting region 142 of the mask 14, and the diffractive optical element 70 is used for collimating the collimating collimating element 50
  • the laser is formed to form a laser pattern. That is, the laser emitter 10 of the embodiment of the present application can be applied to the photovoltaic device 100 including the collimating element 50 and the diffractive optical element 70 to emit a light beam to generate a laser pattern.
  • the laser emitter 10 of the embodiment of the present application can also be applied to any optoelectronic device 100 that uses the laser emitter 10 to emit a light beam.
  • the optoelectronic device 100 includes a substrate 30 and a laser emitter 10, and the laser emitter 10 is disposed at On the substrate 30.
  • the photoelectric device generally comprises a light source, a collimating element and a diffractive optical element, wherein the light source may be a single edge emitting laser light source, or an area array laser light source composed of a plurality of vertical cavity surface emitting lasers.
  • An optoelectronic device based on a single edge emitting laser source can emit a laser pattern with higher correlation, but its volume will increase significantly as the output power increases, and the uniformity of the laser pattern is poor;
  • Two optoelectronic devices that emit a laser source with a vertical cavity surface can emit a laser pattern of the same power and higher uniformity in a smaller volume, but the laser pattern is less correlated, and the laser pattern is uncorrelated.
  • the height directly affects the depth of the depth image and the speed of the depth image.
  • the shape and/or the amount of transmitted light of each of the light-transmitting regions 142 of the mask 14 are different, or the shape and/or the amount of light transmitted by each of the light-transmitting regions 142. Differently, the irrelevance of the laser pattern can be improved, thereby improving the speed and accuracy of acquiring the depth image of the laser pattern.
  • the irrelevance of the laser pattern refers to the uniqueness of each laser pattern generated by the light beam emitted by the light source 12, and the uniqueness includes the uniqueness of the shape, size, arrangement position, and the like of the laser pattern.
  • the plurality of transparent regions 142 may not be grouped, and the shape and/or the amount of light transmission of each of the light-transmitting regions 142 are different, specifically including: the shape of each of the light-transmitting regions 142 is different; or the transparent portion 142 is transparent. The amount of light is different; or the shape and the amount of light transmitted by each of the light transmitting regions 142 are different.
  • the plurality of light-transmissive regions 142 may be divided into multiple groups, and the shape and/or the amount of light transmission of each of the light-transmitting regions 142 are different, specifically including: the shape of each of the light-transmitting regions 142 is different; or each group The light transmission area 142 has a different amount of light transmission; or each of the light transmission areas 142 has a different shape and light transmission amount.
  • the same group of light-transmitting regions 142 includes a plurality of light-transmitting regions 142, the shapes and the amount of light transmitted by the plurality of light-transmitting regions 142 are the same.
  • the shape of the light transmitting region 142 includes a square, a rectangle, a triangle, a parallelogram, a diamond, a trapezoid, a circle, a fan, a ring, or an arbitrary shape.
  • the amount of light transmitted by the light transmitting region 142 can be measured by the area of the light transmitting region 142.
  • the amount of light transmitted by each of the light-transmitting regions 142 is different, and the amount of light transmitted from the central region to the edge region of the self-mask 14 is gradually increased.
  • the laser emitter 10 when the laser emitter 10 emits laser light, since the laser light is diverged, the laser light emitted by the laser emitter 10 includes a zero-order beam and a non-zero-order beam, wherein the zero-order beam is superimposed and concentrated at the center of the illumination after the laser is diverged.
  • the beam of position, the non-zero-order beam is the beam that is transmitted around the illuminating point after the laser is diverged.
  • the intensity of the zero-order beam is too strong, the zero-order beam cannot be completely diffracted when it is transmitted to the diffractive optical element 70, resulting in the intensity of the zero-order beam emitted by the diffractive optical element 70 being too strong, which may jeopardize the user's eyes.
  • the amount of light transmitted from the central region to the edge region of the self-mask 14 is gradually increased, so that the light concentrated at the intermediate position of the optical path can be reduced, thereby reducing the emission of the laser emitter 10.
  • the intensity of the zero-order beam is gradually increased, so that the light concentrated at the intermediate position of the optical path can be reduced, thereby reducing the emission of the laser emitter 10.
  • the mask 14 includes an opaque region 144 that interfaces with the plurality of light transmissive regions 142.
  • the mask 14 is a light transmissive mask 14, and the opaque region 144 is covered with an opaque material.
  • the material of the transparent mask 14 may be glass, polymethyl methacrylate (PMMA), polycarbonate (Polycarbonate, PC), polyimide (PI), or the like. Since materials such as glass, PMMA, PC, and PI all have excellent light transmission properties, the light-transmitting region 142 may not have a through hole.
  • PMMA polymethyl methacrylate
  • PC polycarbonate
  • PI polyimide
  • the opaque material covered by the opaque region 144 may be a metal material such as gold, silver, copper, zinc, chromium, aluminum, or other opaque material.
  • the opaque material may be formed on the surface of the mask 14 on the side close to the light source 12 by vacuum evaporation.
  • the laser light emitted by the light source 12 is passed through the mask 14 by a portion of the opaque material that does not cover the opaque material and is collimated by the collimating element 50.
  • the mask 14 includes an opaque region 144 that interfaces with the plurality of light transmissive regions 142 .
  • the mask 14 is an opaque mask 14, and the light-transmitting region 142 is a through hole.
  • the plurality of transparent regions 142 are a plurality of through holes, and the plurality of through holes may be spaced apart from each other or may be in communication.
  • the laser light emitted by the light source 12 is passed through the mask 14 by the through holes and then collimated by the collimating element 50.
  • the mask 14 may be made of a light transmissive material and an opaque material.
  • the light transmissive region 142 is made of a light transmissive material (for example, glass, PMMA, PC, and PI).
  • the light transmittance may be different or the same according to the grouping of the light transmitting regions 142, and the light opaque region 144 is made of a non-light transmitting material (for example, metal or the like).
  • the light source 12 is a vertical cavity surface emitting laser, and the light source 12 includes a substrate 122 and a light emitting element array 124 disposed on the substrate 122.
  • a vertical cavity surface emitting laser is a novel laser that emits light on a vertical surface.
  • a conventional edge emitting laser such as a distributed feedback laser
  • the integration of a high-density two-dimensional array can be easily realized.
  • the beam shaping system and the manufacturing process are compatible with LEDs, which greatly reduces production costs.
  • the light source 12 can also be other types of point source light emitting devices, which are not limited herein.
  • the light emitting element array 124 includes a plurality of light emitting elements 1242.
  • the number of the light-transmitting regions 142 may be greater than the number of the light-emitting elements 1242.
  • at least one of the light-emitting elements 1242 corresponds to at least two light-transmitting regions 142; or the number of the light-transmitting regions 142 is equal to the number of the light-emitting elements 1242.
  • the light-emitting elements 1242 correspond to one light-transmitting region 142 (as shown in FIG.
  • At least one light-emitting element 1242 corresponds to at least two light-transmitting regions 142, or at least one light-transmitting region 142 corresponds to at least two light-emitting elements 1242; or
  • the number of the light-transmitting regions 142 is smaller than the number of the light-emitting elements 1242. At this time, at least one of the light-transmitting regions 142 corresponds to at least two light-emitting elements 1242.
  • the array of light-emitting elements 124 includes a plurality of light-emitting elements 1242 that are regularly distributed.
  • the plurality of light transmitting regions 142 are divided into a plurality of groups, and the plurality of light emitting elements 1242 are also divided into a plurality of groups.
  • Each set of light transmissive regions 142 corresponds to a set of light emitting elements 1242.
  • the rule distribution includes a matrix distribution (including rows and columns perpendicular to each other, or rows and columns forming a predetermined inclination angle), an annular distribution, an equidistant distribution along a predetermined direction, or an arbitrary regular distribution, which is not used herein. limit. It will be appreciated that the fabrication of a plurality of regularly distributed light-emitting elements 1242 on the same semiconductor substrate 122 can greatly increase manufacturing efficiency.
  • the plurality of sets of light-emitting elements 1242 includes a first set of light-emitting elements 1242 and a second set of light-emitting elements 1242, the first set of light-emitting elements 1242 being regularly or irregularly distributed, and the second set of light-emitting elements 1242 being regularly or irregularly distributed.
  • the plurality of sets of light-emitting elements 1242 are still regularly distributed as a whole.
  • the first group of light-emitting elements 1242 and the second group of light-emitting elements 1242 may each be irregularly distributed (as shown in FIG. 5); or the first group of light-emitting elements 1242 are regularly distributed, and the second group of light-emitting elements 1242 are irregularly distributed;
  • the first set of light-emitting elements 1242 are irregularly distributed, the second set of light-emitting elements 1242 are regularly distributed; or the first set of light-emitting elements 1242 and the second set of light-emitting elements 1242 are regularly distributed.
  • first group of light-emitting elements 1242 are regularly distributed and the second group of light-emitting elements 1242 are irregularly distributed
  • a regularly distributed first group of light-emitting elements 1242 may be formed on the substrate 122, and then A second set of light-emitting elements 1242 or other groups of light-emitting elements 1242 are supplementally formed on the substrate 122 such that the plurality of sets of light-emitting elements 1242 are generally regularly distributed.
  • each set of light-emitting elements 1242 is used to be driven to emit light beams of different light intensities.
  • the plurality of sets of light-emitting elements 1242 emit light at the same time, and the intensity of the light beam emitted by each set of light-emitting elements 1242 can be freely controlled.
  • a plurality of light-emitting elements 1242 are divided into four groups, a first group of light-emitting elements 1242 is used to emit a light beam having a light intensity of L1, and a second group of light-emitting elements 1242 is used to emit a light beam having a light intensity of L2.
  • the third group of light-emitting elements 1242 is for emitting a light beam having a light intensity of L3, and the fourth group of light-emitting elements 1242 is for emitting a light beam having a light intensity of L4, wherein L1 ⁇ L2 ⁇ L3 ⁇ L4.
  • the light beams can sequentially obtain the spots of different shapes after passing through the mask 14, the collimating element 50, and the diffractive optical element 70, resulting in high irrelevance. Laser pattern.
  • the mask 14 since the irrelevance of the laser pattern can be improved by controlling the intensity of the light beams emitted by the different groups of the light-emitting elements 1242, the mask 14 only needs a lower degree of improvement of the laser pattern. It is irrelevant, that is, the difference between the light transmission amounts of the plurality of sets of light-transmitting regions 142 can be small, and the light transmission amount of each of the light-transmitting regions 142 can be set relatively large to reduce the light loss. .
  • each set of light emitting elements 1242 is used to be driven to emit light beams of different wavelengths.
  • the plurality of sets of light-emitting elements 1242 emit light at the same time, and the wavelength of the light beam emitted by each set of light-emitting elements 1242 can be freely controlled.
  • a plurality of light-emitting elements 1242 are divided into four groups, a first group of light-emitting elements 1242 is used to emit a light beam having a wavelength of ⁇ 1, and a second group of light-emitting elements 1242 is used to emit a light beam having a wavelength of ⁇ 2, and a third The group of light-emitting elements 1242 is for emitting a light beam of wavelength ⁇ 3, and the fourth group of light-emitting elements 1242 is for emitting a light beam of wavelength ⁇ 4, where ⁇ 1 ⁇ ⁇ 2 ⁇ ⁇ 3 ⁇ ⁇ 4.
  • the light beams can pass through the mask 14, the collimating element 50, and the diffractive optical element 70 in sequence, thereby obtaining spots of different shapes, resulting in high irrelevance. Laser pattern.
  • the light-emitting element 1242 can emit light beams of different wavelengths by changing the temperature of the light-emitting element 1242.
  • the higher the temperature of the light-emitting element 1242 the higher the wavelength of the emitted light beam.
  • the plurality of sets of light-emitting elements 1242 are configured to emit light beams of different wavelengths.
  • the mask 14 since the uncorrelation of the laser pattern can be improved by controlling the wavelengths of the light beams emitted by the different groups of the light-emitting elements 1242, the mask 14 only needs a lower degree of improvement of the laser pattern. It is irrelevant, that is, the difference between the light transmission amounts of the plurality of sets of light-transmitting regions 142 can be small, and the light transmission amount of each of the light-transmitting regions 142 can be set relatively large to reduce the light loss. .
  • the mask 14 is spaced from the source 12.
  • the mask 14 and the light emitting element array 124 are integrated on the substrate 122. As such, it is advantageous to reduce the volume of the laser emitter 10. At this time, the mask 14 may surround the circumference or opposite sides of the light emitting element array 124.
  • the light source 12 is an edge emitting laser, and the light source 12 includes a light emitting surface 126 that faces the mask 14 .
  • the light source 12 adopts an edge emitting laser.
  • the edge emitting laser has a smaller temperature drift than the vertical cavity surface emitting laser.
  • the edge emitting laser is a single point light emitting structure, it is not necessary to design an array structure and is simple to manufacture. And the cost is lower.
  • the light source 12 may be a Distributed Feedback Laser (DFB).
  • the light source 12 has a columnar shape as a whole, and the light source 12 forms a light-emitting surface 126 away from one end surface of the substrate 30.
  • the laser light is emitted from the light-emitting surface 126, and the light-emitting surface 126 faces the mask 14.
  • the collimating optical axis of the collimating element 50 is perpendicular to the light emitting surface 126 and the mask 14, and the collimating optical axis passes through the light emitting surface 126 and the center of the mask 14.
  • the light source 12 is fixed on the substrate 30. Specifically, the light source 12 can be adhered to the substrate 30 through the sealant 80.
  • a side of the light source 12 opposite to the light emitting surface 126 is bonded to the substrate 30 (as shown in FIG. 7).
  • the sealant 80 may be a thermal conductive adhesive to conduct heat generated by the operation of the light source 12 to the substrate 30.
  • the substrate 30 can be made of a heat dissipating material, such as a ceramic material, to dissipate the light source 12 to improve the service life of the laser emitter 10.
  • the gain of the power is obtained through the feedback of the grating structure.
  • the glue 80 is capable of holding the edge-emitting laser to prevent accidents such as dropping, displacement or shaking of the edge-emitting laser.
  • the light source 12 can also be attached to the substrate 30 in a fixed manner as shown in FIG.
  • the optoelectronic device 100 includes a plurality of support blocks 90 that can be fixed on the substrate 30.
  • the plurality of support blocks 90 collectively surround the light source 12 and interfere with the side surface 128 of the light source 12, and the light source 12 can be directly mounted during installation. Between the plurality of support blocks 90.
  • a plurality of support blocks 90 collectively clamp the light source 12 to prevent the light source 12 from sloshing.
  • the material of the substrate 30 may be plastic, for example, Polyethylene Glycol Terephthalate (PET), Polymethyl Methacrylate (PMMA), Polycarbonate. Any one or more of (Polycarbonate, PC) and Polyimide (PI). As such, the substrate 30 is lighter in weight and has sufficient support strength.
  • PET Polyethylene Glycol Terephthalate
  • PMMA Polymethyl Methacrylate
  • PI Polyimide
  • the number of collimating elements 50 can be one.
  • a collimating element 50 corresponds to the plurality of light transmissive regions 142.
  • the manufacturing process is relatively simple.
  • the number of the collimating elements 50 may be plural, and the plurality of collimating elements 50 are divided into a plurality of groups, and the plurality of collimating elements 50 may be integrated on the mask 14 and each The group collimating elements 50 correspond to each set of light transmitting regions 142, respectively.
  • each set of collimating elements 50 can have different focal lengths, wherein different focal lengths include positive and negative and/or size of the focal length. That is, each set of collimating elements 50 is capable of producing different diverging or converging beams. In this way, the irrelevance of the laser pattern can be further improved.
  • the collimating element 50 may include one or more lenses.
  • the one or more lenses are coaxially disposed on the illuminating light path of the light source 12, and the lens is made of a glass material to solve the problem that the lens will have a temperature drift when the ambient temperature changes. problem.
  • the shape of each lens may be any one of an aspherical surface, a spherical surface, a Fresnel surface, and a binary optical surface.
  • the depth camera 1000 of the embodiment of the present application includes the optoelectronic device 100, the image collector 200, and the processor 300 of the embodiment of the present application.
  • the image collector 200 is used to capture a laser pattern projected by the optoelectronic device 100 into the target space.
  • the processor 300 is connected to the optoelectronic device 100 and the image collector 200, respectively.
  • the processor 300 is for processing a laser pattern to obtain a depth image.
  • the optoelectronic device 100 projects the laser pattern projected into the target space through the projection window 400, and the image collector 200 collects the laser pattern modulated by the target object through the acquisition window 500.
  • the image collector 200 may be an infrared camera.
  • the processor 300 calculates an offset value of each pixel point in the laser pattern and a corresponding pixel point in the reference pattern by using an image matching algorithm, and further obtains the depth of the laser pattern according to the deviation value.
  • image may be a Digital Image Correlation (DIC) algorithm. Of course, other image matching algorithms can be used instead of the DIC algorithm.
  • DIC Digital Image Correlation
  • an electronic device 2000 includes a housing 2001 and a depth camera 1000 of the above embodiment.
  • the depth camera 1000 is disposed within the housing 2001 and exposed from the housing 2001 to obtain a depth image.
  • the electronic device 2000 includes, but is not limited to, a mobile phone, a tablet computer, a notebook computer, a smart wristband, a smart watch, a smart helmet, smart glasses, and the like.
  • the housing 2001 can provide the depth camera 1000 with protection against dust, water, drop, and the like.
  • a "computer-readable medium” can be any apparatus that can contain, store, communicate, propagate, or transport a program for use in an instruction execution system, apparatus, or device, or in conjunction with the instruction execution system, apparatus, or device.
  • computer readable media include the following: electrical connections (IPM overcurrent protection circuits) with one or more wires, portable computer disk cartridges (magnetic devices), random access memories (RAM), read only memory (ROM), erasable editable read only memory (EPROM or flash memory), fiber optic devices, and portable compact disk read only memory (CDROM).
  • the computer readable medium may even be a paper or other suitable medium on which the program can be printed, as it may be optically scanned, for example by paper or other medium, followed by editing, interpretation or, if appropriate, other suitable The method is processed to obtain the program electronically and then stored in computer memory.
  • portions of the embodiments of the present application can be implemented in hardware, software, firmware, or a combination thereof.
  • multiple steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system.
  • a suitable instruction execution system For example, if implemented in hardware, as in another embodiment, it can be implemented by any one or combination of the following techniques well known in the art: having logic gates for implementing logic functions on data signals. Discrete logic circuits, application specific integrated circuits with suitable combinational logic gates, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.
  • each functional unit in each embodiment of the present application may be integrated into one processing module, or each unit may exist physically separately, or two or more units may be integrated into one module.
  • the above integrated modules can be implemented in the form of hardware or in the form of software functional modules.
  • the integrated modules, if implemented in the form of software functional modules and sold or used as stand-alone products, may also be stored in a computer readable storage medium.
  • the above mentioned storage medium may be a read only memory, a magnetic disk or an optical disk or the like.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un émetteur laser (10), un appareil opto-électronique (100), une caméra de profondeur (1000) et un dispositif électronique (2000). L'émetteur laser (10) comprend une source de lumière (12) et un masque (14) disposé sur un chemin d'émission de lumière de la source de lumière (12). Le masque (14) comprend une pluralité de régions de transmission de lumière (142), la forme et/ou la transmittance de lumière de chaque région de transmission de lumière (142) étant différentes, ou la pluralité des régions de transmission de lumière (142) étant divisées en une pluralité de groupes, et la forme et/ou la transmittance de lumière de chaque groupe de régions de transmission de lumière (142) étant différentes.
PCT/CN2019/070768 2018-04-03 2019-01-08 Émetteur laser, appareil opto-électronique, caméra de profondeur et dispositif électronique WO2019192240A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810296894.1A CN108490637B (zh) 2018-04-03 2018-04-03 激光发射器、光电设备、深度相机和电子装置
CN201810296894.1 2018-04-03

Publications (1)

Publication Number Publication Date
WO2019192240A1 true WO2019192240A1 (fr) 2019-10-10

Family

ID=63314536

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/070768 WO2019192240A1 (fr) 2018-04-03 2019-01-08 Émetteur laser, appareil opto-électronique, caméra de profondeur et dispositif électronique

Country Status (2)

Country Link
CN (1) CN108490637B (fr)
WO (1) WO2019192240A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114125417A (zh) * 2020-08-25 2022-03-01 北京小米移动软件有限公司 图像传感器、摄像装置、图像采集方法、装置及存储介质

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108490637B (zh) * 2018-04-03 2019-08-23 Oppo广东移动通信有限公司 激光发射器、光电设备、深度相机和电子装置
CN109143607B (zh) * 2018-09-17 2020-09-18 深圳奥比中光科技有限公司 补偿显示屏、屏下光学系统及电子设备
US11223816B2 (en) 2018-09-26 2022-01-11 Himax Technologies Limited Multi-image projector and electronic device having multi-image projector
EP3637044B1 (fr) * 2018-10-09 2022-11-16 Himax Technologies Limited Projecteur d'images multiples et dispositif électronique doté du projecteur d'images multiples

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050264797A1 (en) * 2004-05-26 2005-12-01 Hiroyuki Nakano Method and apparatus for detecting defects
CN1735788A (zh) * 2002-11-11 2006-02-15 秦内蒂克有限公司 结构化的光投影器
CN102402113A (zh) * 2010-09-09 2012-04-04 北京中视中科光电技术有限公司 一种激光投影屏幕
CN106444243A (zh) * 2015-08-07 2017-02-22 高准精密工业股份有限公司 发光装置
CN106568396A (zh) * 2016-10-26 2017-04-19 深圳奥比中光科技有限公司 一种激光投影仪及其深度相机
CN106990659A (zh) * 2017-05-09 2017-07-28 深圳奥比中光科技有限公司 激光投影装置
CN107621673A (zh) * 2017-09-27 2018-01-23 京东方科技集团股份有限公司 光源模组和显示装置
CN108490637A (zh) * 2018-04-03 2018-09-04 Oppo广东移动通信有限公司 激光发射器、光电设备、深度相机和电子装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5914492A (en) * 1997-08-15 1999-06-22 Southeastern Universities Research Assn., Inc. Application accelerator system having bunch control
US6747781B2 (en) * 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
JP4591489B2 (ja) * 2007-08-30 2010-12-01 セイコーエプソン株式会社 光源装置、画像表示装置及びモニタ装置
JP5152721B2 (ja) * 2008-03-24 2013-02-27 国立大学法人横浜国立大学 半導体レーザ
JP5721422B2 (ja) * 2010-12-20 2015-05-20 キヤノン株式会社 面発光レーザ及びアレイ光源
CN102681198B (zh) * 2011-03-17 2014-07-02 宏瞻科技股份有限公司 激光投影系统的激光光斑抑制装置及其抑制方法
CN105676478B (zh) * 2016-04-13 2018-08-07 中北大学 一种用于激光投影系统的静态消散斑装置
CN105929558A (zh) * 2016-06-20 2016-09-07 深圳奥比中光科技有限公司 用于产生结构光的激光模组
CN106972347B (zh) * 2017-05-04 2019-04-09 深圳奥比中光科技有限公司 用于3d成像的激光阵列
CN107741682A (zh) * 2017-10-20 2018-02-27 深圳奥比中光科技有限公司 光源投影装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1735788A (zh) * 2002-11-11 2006-02-15 秦内蒂克有限公司 结构化的光投影器
US20050264797A1 (en) * 2004-05-26 2005-12-01 Hiroyuki Nakano Method and apparatus for detecting defects
CN102402113A (zh) * 2010-09-09 2012-04-04 北京中视中科光电技术有限公司 一种激光投影屏幕
CN106444243A (zh) * 2015-08-07 2017-02-22 高准精密工业股份有限公司 发光装置
CN106568396A (zh) * 2016-10-26 2017-04-19 深圳奥比中光科技有限公司 一种激光投影仪及其深度相机
CN106990659A (zh) * 2017-05-09 2017-07-28 深圳奥比中光科技有限公司 激光投影装置
CN107621673A (zh) * 2017-09-27 2018-01-23 京东方科技集团股份有限公司 光源模组和显示装置
CN108490637A (zh) * 2018-04-03 2018-09-04 Oppo广东移动通信有限公司 激光发射器、光电设备、深度相机和电子装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114125417A (zh) * 2020-08-25 2022-03-01 北京小米移动软件有限公司 图像传感器、摄像装置、图像采集方法、装置及存储介质

Also Published As

Publication number Publication date
CN108490637B (zh) 2019-08-23
CN108490637A (zh) 2018-09-04

Similar Documents

Publication Publication Date Title
WO2019192240A1 (fr) Émetteur laser, appareil opto-électronique, caméra de profondeur et dispositif électronique
CN108318874B (zh) 一种面阵激光雷达及移动平台
US20210367410A1 (en) Wide-angle illuminator module
CN108549085B (zh) 一种发射镜头、面阵激光雷达及移动平台
TWI702391B (zh) 繞射光學組件、鐳射投射模組、深度相機和電子裝置
US11635654B2 (en) Illumination device and electronic apparatus including the same
WO2019174434A1 (fr) Projecteur de lumière structurée, caméra de profondeur et dispositif électronique
CN108344378B (zh) 激光投射模组及其损坏的检测方法、深度相机和电子装置
CN108303757B (zh) 激光投射模组、深度相机和电子装置
WO2019233103A1 (fr) Élément optique diffractif, module optoélectronique, ensemble d'entrée/sortie et dispositif électronique
CN108415209B (zh) 结构光投射模组、摄像组件和电子装置
US11137246B2 (en) Optical device
CN108388065B (zh) 结构光投射器、光电设备和电子装置
CN108303756B (zh) 激光投射模组、深度相机和电子装置
KR20100094578A (ko) 광전 장치, 및 영상 기록 장치
JP4470622B2 (ja) 光学装置
CN215599370U (zh) 飞行时间摄像模组和电子设备
TWI683138B (zh) 鐳射投射模組、深度相機和電子裝置
TWI785400B (zh) 光源、感測器及照明場景的方法
CN108490595B (zh) 结构光投射模组、图像获取装置及电子设备
CN208907945U (zh) 投影模组、成像装置和电子装置
CN108594449B (zh) 激光投射模组、深度相机和电子装置
WO2019134671A1 (fr) Émetteur laser, dispositif optoélectronique et caméra de profondeur
WO2019134672A1 (fr) Émetteur laser, dispositif optoélectronique et caméra de profondeur
CN108508618B (zh) 激光投射模组、深度相机和电子装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19781686

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19781686

Country of ref document: EP

Kind code of ref document: A1