WO2019165755A8 - 一种发光二极管芯片及其制备方法 - Google Patents

一种发光二极管芯片及其制备方法 Download PDF

Info

Publication number
WO2019165755A8
WO2019165755A8 PCT/CN2018/098389 CN2018098389W WO2019165755A8 WO 2019165755 A8 WO2019165755 A8 WO 2019165755A8 CN 2018098389 W CN2018098389 W CN 2018098389W WO 2019165755 A8 WO2019165755 A8 WO 2019165755A8
Authority
WO
WIPO (PCT)
Prior art keywords
sub
pixel
doped layer
type gan
gan doped
Prior art date
Application number
PCT/CN2018/098389
Other languages
English (en)
French (fr)
Other versions
WO2019165755A1 (zh
Inventor
吕泉
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to EP18908112.8A priority Critical patent/EP3748700A4/en
Publication of WO2019165755A1 publication Critical patent/WO2019165755A1/zh
Priority to US17/004,958 priority patent/US11296257B2/en
Publication of WO2019165755A8 publication Critical patent/WO2019165755A8/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管芯片及其制备方法，用以实现全彩显示。芯片包括：N型GaN掺杂层；分别在N型GaN掺杂层的第一面的三个子像素区域上形成的三个子像素结构，三个子像素结构中的每个子像素结构中均依次包含蓝光量子阱结构、界面阻挡层、绿光量子阱结构、电荷阻挡层和P型GaN掺杂层；在三个子像素结构之上分别形成的三个P型接触电极，以及在N型GaN掺杂层的第一面上除三个子像素区域之外的其他区域上形成的N型接触电极；在N型GaN掺杂层的第二面上、与三个子像素区域中的第一子像素区域对应的区域上形成的红光胶体量子点结构。
PCT/CN2018/098389 2018-02-28 2018-08-02 一种发光二极管芯片及其制备方法 WO2019165755A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP18908112.8A EP3748700A4 (en) 2018-02-28 2018-08-02 LIGHT DIODE CHIP AND MANUFACTURING METHOD FOR IT
US17/004,958 US11296257B2 (en) 2018-02-28 2020-08-27 Light-emitting diode chip and preparation method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810168757.XA CN110212064B (zh) 2018-02-28 2018-02-28 一种发光二极管芯片及其制备方法
CN201810168757.X 2018-02-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/004,958 Continuation US11296257B2 (en) 2018-02-28 2020-08-27 Light-emitting diode chip and preparation method therefor

Publications (2)

Publication Number Publication Date
WO2019165755A1 WO2019165755A1 (zh) 2019-09-06
WO2019165755A8 true WO2019165755A8 (zh) 2020-09-17

Family

ID=67778763

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/098389 WO2019165755A1 (zh) 2018-02-28 2018-08-02 一种发光二极管芯片及其制备方法

Country Status (4)

Country Link
US (1) US11296257B2 (zh)
EP (1) EP3748700A4 (zh)
CN (1) CN110212064B (zh)
WO (1) WO2019165755A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110880522B (zh) * 2019-10-14 2022-03-29 厦门大学 基于极性面和非极性面生长的微型led集成全色显示芯片及其制备方法
US11264535B1 (en) * 2020-08-12 2022-03-01 Jyh-Chia Chen Pixel device and display using a monolithic blue/green LED combined with red luminescence materials
CN112420885A (zh) * 2020-12-08 2021-02-26 福建兆元光电有限公司 一种集成式Micro LED芯片及其制造方法
WO2024107372A1 (en) * 2022-11-18 2024-05-23 Lumileds Llc Visualization system including direct and converted polychromatic led array
CN116482931B (zh) * 2023-06-25 2023-11-21 江西兆驰半导体有限公司 用于巨量转移的掩模版及其设计方法、巨量转移方法
CN117637944B (zh) * 2024-01-25 2024-04-02 江西兆驰半导体有限公司 一种发光二极管外延片及其制备方法、led芯片

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5952681A (en) 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
US7323721B2 (en) * 2004-09-09 2008-01-29 Blue Photonics Inc. Monolithic multi-color, multi-quantum well semiconductor LED
TWI344314B (en) * 2005-10-14 2011-06-21 Hon Hai Prec Ind Co Ltd Light-emitting element, plane light source and direct-type backlight module
TWI397192B (zh) * 2007-08-03 2013-05-21 Au Optronics Corp 白色發光二極體
CN101800273B (zh) * 2009-02-11 2011-06-01 立景光电股份有限公司 形成横向分布发光二极管的方法
TW201106505A (en) * 2009-04-20 2011-02-16 3M Innovative Properties Co Non-radiatively pumped wavelength converter
CN101771028B (zh) * 2009-12-25 2012-09-05 中国科学院上海微系统与信息技术研究所 一种白光led芯片及其制造方法
CN102231422A (zh) * 2011-06-16 2011-11-02 清华大学 一种无荧光粉单芯片GaN基发光二极管及其制备方法
US9159700B2 (en) 2012-12-10 2015-10-13 LuxVue Technology Corporation Active matrix emissive micro LED display
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
GB201420452D0 (en) 2014-11-18 2014-12-31 Mled Ltd Integrated colour led micro-display
US9557954B2 (en) 2014-12-23 2017-01-31 X Development Llc Display panel using direct emission pixel arrays
CN104617121A (zh) * 2015-01-04 2015-05-13 中国电子科技集团公司第五十五研究所 一种提高有源矩阵微型led显示器光学性能的方法
KR102377794B1 (ko) * 2015-07-06 2022-03-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
KR102373200B1 (ko) * 2015-07-14 2022-03-17 삼성전자주식회사 디스플레이 패널 및 상기 디스플레이 패널을 이용하는 디스플레이 장치
US11239394B2 (en) * 2016-03-18 2022-02-01 Lg Innotek Co., Ltd. Semiconductor device and display device including the same
CN105679196A (zh) * 2016-04-11 2016-06-15 深圳市丽格特光电有限公司 一种基于氮化镓led和量子点技术的全彩色高分辨率微显示芯片
US9941330B2 (en) * 2016-05-18 2018-04-10 Globalfoundries Inc. LEDs with three color RGB pixels for displays
CN105977350B (zh) * 2016-05-23 2019-01-08 吉林大学 基于能量转移机制的量子点发光二极管的制备方法
CN106356463B (zh) * 2016-10-11 2017-12-29 深圳市华星光电技术有限公司 Qled显示装置的制作方法
CN106920790A (zh) 2017-01-24 2017-07-04 中山大学 一种全彩微显示器件及其制备方法
CN107203064A (zh) * 2017-07-03 2017-09-26 厦门天马微电子有限公司 一种显示装置
US20200152841A1 (en) * 2017-07-31 2020-05-14 Yale University Nanoporous micro-led devices and methods for making

Also Published As

Publication number Publication date
US11296257B2 (en) 2022-04-05
WO2019165755A1 (zh) 2019-09-06
US20200395507A1 (en) 2020-12-17
EP3748700A1 (en) 2020-12-09
EP3748700A4 (en) 2021-04-14
CN110212064A (zh) 2019-09-06
CN110212064B (zh) 2020-10-09

Similar Documents

Publication Publication Date Title
WO2019165755A8 (zh) 一种发光二极管芯片及其制备方法
JP6653665B2 (ja) 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2019534565A5 (ja) 発光ダイオード、ディスプレイデバイス、および、直視型ディスプレイデバイス
KR101476207B1 (ko) 반도체 발광 소자를 이용한 디스플레이 장치
CN103094269B (zh) 白光发光器件及其制作方法
KR102509877B1 (ko) 마이크로 led 표시 패널 및 그 제조 방법
US20220037393A1 (en) Optoelectronic device comprising pixels which emit three colours
CN108987424B (zh) 一种Micro-LED显示面板及其制造方法
CN106129265A (zh) 有机电致发光器件
US10998464B2 (en) Flip-chip light emitting diode, manufacturing method of flip-chip light emitting diode and display device including flip-chip light emitting diode
JPH07183576A (ja) 窒化ガリウム系化合物半導体発光素子
KR20140083488A (ko) 반도체 발광 소자를 이용한 디스플레이 장치
CN104851980A (zh) 全彩有机发光二极管结构
KR20200056213A (ko) 표시 장치
CN210516726U (zh) 一种全彩显示芯片
WO2021086941A8 (en) Red micro-led with dopants in active region
CN106025036A (zh) 包括有色主体构件的发光二极管封装
CN115411160B (zh) 一种全彩Micro-LED芯片及其制备方法
US11876154B2 (en) Light emitting diode device and method for manufacturing the same
US20220415862A1 (en) Full-color display chip and manufacturing process for semiconductor chip
US20220285578A1 (en) Light-emitting diode and display device including the same
CN109585665A (zh) 一种发光元件以及显示装置
KR20230092671A (ko) 마이크로 발광 소자 디스플레이 장치 및 그 제조 방법
WO2023092573A1 (zh) 白光发光器件和显示装置
WO2023092569A1 (zh) 白光发光器件和彩色显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18908112

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2018908112

Country of ref document: EP

Effective date: 20200904