WO2019164444A8 - Optimized top contact grid design for thin film solar cells and method of producing the same - Google Patents

Optimized top contact grid design for thin film solar cells and method of producing the same Download PDF

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Publication number
WO2019164444A8
WO2019164444A8 PCT/SE2019/050163 SE2019050163W WO2019164444A8 WO 2019164444 A8 WO2019164444 A8 WO 2019164444A8 SE 2019050163 W SE2019050163 W SE 2019050163W WO 2019164444 A8 WO2019164444 A8 WO 2019164444A8
Authority
WO
WIPO (PCT)
Prior art keywords
producing
thin film
contact grid
same
solar cells
Prior art date
Application number
PCT/SE2019/050163
Other languages
French (fr)
Other versions
WO2019164444A9 (en
WO2019164444A1 (en
Inventor
Sara LOTFI
Johan MATHIASSON
Ulf MALM
Original Assignee
Solibro Research Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solibro Research Ab filed Critical Solibro Research Ab
Publication of WO2019164444A1 publication Critical patent/WO2019164444A1/en
Publication of WO2019164444A8 publication Critical patent/WO2019164444A8/en
Publication of WO2019164444A9 publication Critical patent/WO2019164444A9/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The present invention relates to a solar cell comprising a top contact grid provided on top of a transparent front contact. The top contact grid comprises a plurality of branches, wherein at least one branch has a first side surface and a second side surface extending upwards from the surface of the transparent front contact, a fractured top surface parallel to the surface of the transparent front contact and a first branch edge joining the first side surface and the fractured top surface and a second branch edge joining the second side surface and the fractured top surface. The cross section of the branch is very near a rectangular shape.
PCT/SE2019/050163 2018-02-22 2019-02-22 Optimized top contact grid design for thin film solar cells and method of producing the same WO2019164444A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE1850194-0 2018-02-22
SE1850194A SE541452C2 (en) 2018-02-22 2018-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer

Publications (3)

Publication Number Publication Date
WO2019164444A1 WO2019164444A1 (en) 2019-08-29
WO2019164444A8 true WO2019164444A8 (en) 2019-11-14
WO2019164444A9 WO2019164444A9 (en) 2020-01-02

Family

ID=65685934

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/SE2019/050162 WO2019164443A1 (en) 2018-02-22 2019-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer
PCT/SE2019/050163 WO2019164444A1 (en) 2018-02-22 2019-02-22 Optimized top contact grid design for thin film solar cells and method of producing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/SE2019/050162 WO2019164443A1 (en) 2018-02-22 2019-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer

Country Status (3)

Country Link
EP (1) EP3821298A1 (en)
SE (1) SE541452C2 (en)
WO (2) WO2019164443A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021260084A1 (en) 2020-06-26 2021-12-30 Evolar Ab Photovoltaic top module

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119483A (en) * 1974-07-30 1978-10-10 U.S. Philips Corporation Method of structuring thin layers
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
JPS5669835A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Method for forming thin film pattern
JPS59211289A (en) * 1983-05-16 1984-11-30 Fuji Electric Corp Res & Dev Ltd Manufacture of amorphous silicon solar battery
US4662989A (en) * 1985-10-04 1987-05-05 Honeywell Inc. High efficiency metal lift-off process
US7297470B2 (en) * 2004-01-05 2007-11-20 Hitachi Global Storage Technologies Netherlands B.V. Image transfer process for thin film component definition
US8357244B1 (en) * 2007-06-28 2013-01-22 Western Digital (Fremont), Llc Method for lifting off photoresist beneath an overlayer
US20110277816A1 (en) * 2010-05-11 2011-11-17 Sierra Solar Power, Inc. Solar cell with shade-free front electrode
KR101835293B1 (en) * 2010-09-03 2018-03-06 테트라썬, 아이엔씨. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
DE102013111981A1 (en) * 2013-10-30 2015-04-30 Hanergy Holding Group Ltd. Method for producing a thin-film solar cell module and thin-film solar cell module

Also Published As

Publication number Publication date
WO2019164443A1 (en) 2019-08-29
SE1850194A1 (en) 2019-08-23
EP3821298A1 (en) 2021-05-19
WO2019164444A9 (en) 2020-01-02
WO2019164444A1 (en) 2019-08-29
SE541452C2 (en) 2019-10-08

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