SE1850194A1 - Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer - Google Patents

Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer

Info

Publication number
SE1850194A1
SE1850194A1 SE1850194A SE1850194A SE1850194A1 SE 1850194 A1 SE1850194 A1 SE 1850194A1 SE 1850194 A SE1850194 A SE 1850194A SE 1850194 A SE1850194 A SE 1850194A SE 1850194 A1 SE1850194 A1 SE 1850194A1
Authority
SE
Sweden
Prior art keywords
metal
photoresist
layer
deposited
metal layer
Prior art date
Application number
SE1850194A
Other versions
SE541452C2 (en
Inventor
Johan Mathiasson
Sara Lotfi
Original Assignee
Solibro Res Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solibro Res Ab filed Critical Solibro Res Ab
Priority to SE1850194A priority Critical patent/SE541452C2/en
Priority to PCT/SE2019/050163 priority patent/WO2019164444A1/en
Priority to EP19710175.1A priority patent/EP3821298A1/en
Priority to PCT/SE2019/050162 priority patent/WO2019164443A1/en
Publication of SE1850194A1 publication Critical patent/SE1850194A1/en
Publication of SE541452C2 publication Critical patent/SE541452C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The present invention relates to a method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer, comprising the stepsa) providing a substrate, optionally having at least one layer provided thereon, b) applying at least one layer of photoresist on a surface of the substrate or of the at least one layer,c) baking the photoresist for removing excess solventd) creating a pattern in said photoresist to expose at least one portion of the surface, said pattern comprising at least one edge between the photoresist and the exposed at least one portion of the surface,e) depositing a metal on said photoresist and said at least one portion of the surface to form a metal layer, said metal having a temperature at deposition that is higher than a temperature of the substrate,f) cooling the deposited metal through contact with the exposed surface and the photoresist layer, thereby causing a contraction of the deposited metal and generating at least one crack or gap through the metal layer at the edge, g) applying a solvent through the at least one crack or gap for removing the photoresist and thereby removing the metal layer deposited thereon but leaving the metal deposited on the exposed surface.
SE1850194A 2018-02-22 2018-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer SE541452C2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE1850194A SE541452C2 (en) 2018-02-22 2018-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer
PCT/SE2019/050163 WO2019164444A1 (en) 2018-02-22 2019-02-22 Optimized top contact grid design for thin film solar cells and method of producing the same
EP19710175.1A EP3821298A1 (en) 2018-02-22 2019-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer
PCT/SE2019/050162 WO2019164443A1 (en) 2018-02-22 2019-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1850194A SE541452C2 (en) 2018-02-22 2018-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer

Publications (2)

Publication Number Publication Date
SE1850194A1 true SE1850194A1 (en) 2019-08-23
SE541452C2 SE541452C2 (en) 2019-10-08

Family

ID=65685934

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1850194A SE541452C2 (en) 2018-02-22 2018-02-22 Method for patterning a surface with a metal by controlling the generation of cracks or gaps in a deposited metal layer

Country Status (3)

Country Link
EP (1) EP3821298A1 (en)
SE (1) SE541452C2 (en)
WO (2) WO2019164443A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021260084A1 (en) 2020-06-26 2021-12-30 Evolar Ab Photovoltaic top module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451554A (en) * 1979-11-09 1984-05-29 Sharp Kabushiki Kaisha Method of forming thin-film pattern
US4662989A (en) * 1985-10-04 1987-05-05 Honeywell Inc. High efficiency metal lift-off process
US20050147924A1 (en) * 2004-01-05 2005-07-07 Hitachi Global Storage Technologies Image transfer process for thin film component definition
US20110132443A1 (en) * 2010-09-03 2011-06-09 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US8357244B1 (en) * 2007-06-28 2013-01-22 Western Digital (Fremont), Llc Method for lifting off photoresist beneath an overlayer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119483A (en) * 1974-07-30 1978-10-10 U.S. Philips Corporation Method of structuring thin layers
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
JPS59211289A (en) * 1983-05-16 1984-11-30 Fuji Electric Corp Res & Dev Ltd Manufacture of amorphous silicon solar battery
US20110277816A1 (en) * 2010-05-11 2011-11-17 Sierra Solar Power, Inc. Solar cell with shade-free front electrode
DE102013111981A1 (en) * 2013-10-30 2015-04-30 Hanergy Holding Group Ltd. Method for producing a thin-film solar cell module and thin-film solar cell module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451554A (en) * 1979-11-09 1984-05-29 Sharp Kabushiki Kaisha Method of forming thin-film pattern
US4662989A (en) * 1985-10-04 1987-05-05 Honeywell Inc. High efficiency metal lift-off process
US20050147924A1 (en) * 2004-01-05 2005-07-07 Hitachi Global Storage Technologies Image transfer process for thin film component definition
US8357244B1 (en) * 2007-06-28 2013-01-22 Western Digital (Fremont), Llc Method for lifting off photoresist beneath an overlayer
US20110132443A1 (en) * 2010-09-03 2011-06-09 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M. Kim et al., "Cracking-assisted fabrication of nanoscale patterns for micro/nanotechnological applications", Nanoscale, vol. 8, 9461 (2016) *

Also Published As

Publication number Publication date
EP3821298A1 (en) 2021-05-19
WO2019164443A1 (en) 2019-08-29
WO2019164444A1 (en) 2019-08-29
SE541452C2 (en) 2019-10-08
WO2019164444A8 (en) 2019-11-14
WO2019164444A9 (en) 2020-01-02

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