WO2009119161A3 - Solar cell and method for manufacturing metal electrode layer to be used in the solar cell - Google Patents
Solar cell and method for manufacturing metal electrode layer to be used in the solar cell Download PDFInfo
- Publication number
- WO2009119161A3 WO2009119161A3 PCT/JP2009/051917 JP2009051917W WO2009119161A3 WO 2009119161 A3 WO2009119161 A3 WO 2009119161A3 JP 2009051917 W JP2009051917 W JP 2009051917W WO 2009119161 A3 WO2009119161 A3 WO 2009119161A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode layer
- solar cell
- metal electrode
- metal
- manufacturing metal
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 9
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000005611 electricity Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801093848A CN101978507B (en) | 2008-03-24 | 2009-01-29 | Solar cell and method for manufacturing metal electrode layer to be used in the solar cell |
US12/441,036 US20100175749A1 (en) | 2008-03-24 | 2009-01-29 | Solar cell and method for manufacturing metal electrode layer to be used in the solar cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-075224 | 2008-03-24 | ||
JP2008075224A JP5475246B2 (en) | 2008-03-24 | 2008-03-24 | Solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009119161A2 WO2009119161A2 (en) | 2009-10-01 |
WO2009119161A3 true WO2009119161A3 (en) | 2010-02-25 |
Family
ID=41114420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/051917 WO2009119161A2 (en) | 2008-03-24 | 2009-01-29 | Solar cell and method for manufacturing metal electrode layer to be used in the solar cell |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5475246B2 (en) |
CN (1) | CN101978507B (en) |
WO (1) | WO2009119161A2 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8039292B2 (en) * | 2009-11-18 | 2011-10-18 | International Business Machines Corporation | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes |
JP5649315B2 (en) * | 2010-03-05 | 2015-01-07 | Jx日鉱日石エネルギー株式会社 | Transparent conductive substrate for solar cell, method for producing the same, and solar cell using the same |
JPWO2011125101A1 (en) * | 2010-04-02 | 2013-07-08 | 株式会社東芝 | Photoelectric conversion element and manufacturing method thereof |
FI20106004A0 (en) * | 2010-09-29 | 2010-09-29 | Beneq Oy | Substrate for solar cell and its production method |
JP5398678B2 (en) * | 2010-09-29 | 2014-01-29 | 株式会社東芝 | Photoelectric conversion element |
CN102280501B (en) * | 2011-08-02 | 2013-06-12 | 南通大学 | Silicon-based buried contact film solar cell |
US9520530B2 (en) | 2014-10-03 | 2016-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Solar cell having doped buffer layer and method of fabricating the solar cell |
KR101938830B1 (en) * | 2016-10-05 | 2019-01-16 | 울산과학기술원 | Solar cell with controlled transmittance and manufacturing method thereof |
KR101778723B1 (en) | 2016-11-17 | 2017-09-25 | 한국에너지기술연구원 | Manufacturing method for cigs base photovoltaic cell and cigs base photovoltaic cell |
CN109346554B (en) * | 2018-08-23 | 2020-06-12 | 晶澳(扬州)太阳能科技有限公司 | Manufacturing method of photovoltaic module |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795500A (en) * | 1985-07-02 | 1989-01-03 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JPH02271681A (en) * | 1989-04-13 | 1990-11-06 | Fuji Electric Co Ltd | Solar cell device |
US20060112987A1 (en) * | 2003-01-10 | 2006-06-01 | Toshinobu Nakata | Transparent thin-film solar cell module and its manufacturing method |
EP1850397A1 (en) * | 2005-02-14 | 2007-10-31 | Sanyo Electric Co., Ltd. | Photovoltaic device, photovoltaic module comprising photovoltaic device, and method for manufacturing photovoltaic device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0969517B1 (en) * | 1998-07-04 | 2005-10-12 | International Business Machines Corporation | Electrode for use in electro-optical devices |
US6040936A (en) * | 1998-10-08 | 2000-03-21 | Nec Research Institute, Inc. | Optical transmission control apparatus utilizing metal films perforated with subwavelength-diameter holes |
US6441298B1 (en) * | 2000-08-15 | 2002-08-27 | Nec Research Institute, Inc | Surface-plasmon enhanced photovoltaic device |
CN1180486C (en) * | 2001-10-31 | 2004-12-15 | 四川大学 | Silicon solar cell of nesa with transparent conductive folm front electrode |
JP5193454B2 (en) * | 2005-10-31 | 2013-05-08 | 株式会社東芝 | Short wavelength polarizing element and polarizing element manufacturing method |
JP4421582B2 (en) * | 2006-08-15 | 2010-02-24 | 株式会社東芝 | Pattern formation method |
-
2008
- 2008-03-24 JP JP2008075224A patent/JP5475246B2/en not_active Expired - Fee Related
-
2009
- 2009-01-29 WO PCT/JP2009/051917 patent/WO2009119161A2/en active Application Filing
- 2009-01-29 CN CN2009801093848A patent/CN101978507B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795500A (en) * | 1985-07-02 | 1989-01-03 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JPH02271681A (en) * | 1989-04-13 | 1990-11-06 | Fuji Electric Co Ltd | Solar cell device |
US20060112987A1 (en) * | 2003-01-10 | 2006-06-01 | Toshinobu Nakata | Transparent thin-film solar cell module and its manufacturing method |
EP1850397A1 (en) * | 2005-02-14 | 2007-10-31 | Sanyo Electric Co., Ltd. | Photovoltaic device, photovoltaic module comprising photovoltaic device, and method for manufacturing photovoltaic device |
Also Published As
Publication number | Publication date |
---|---|
CN101978507B (en) | 2012-11-07 |
CN101978507A (en) | 2011-02-16 |
WO2009119161A2 (en) | 2009-10-01 |
JP2009231539A (en) | 2009-10-08 |
JP5475246B2 (en) | 2014-04-16 |
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