WO2019144413A1 - 柔性电子装置 - Google Patents

柔性电子装置 Download PDF

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Publication number
WO2019144413A1
WO2019144413A1 PCT/CN2018/074478 CN2018074478W WO2019144413A1 WO 2019144413 A1 WO2019144413 A1 WO 2019144413A1 CN 2018074478 W CN2018074478 W CN 2018074478W WO 2019144413 A1 WO2019144413 A1 WO 2019144413A1
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WIPO (PCT)
Prior art keywords
connecting portion
electronic device
flexible electronic
protective layer
trace
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PCT/CN2018/074478
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English (en)
French (fr)
Inventor
施文杰
刘亮
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深圳市柔宇科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to PCT/CN2018/074478 priority Critical patent/WO2019144413A1/zh
Priority to CN201880083169.4A priority patent/CN111727505A/zh
Publication of WO2019144413A1 publication Critical patent/WO2019144413A1/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the present invention relates to an electronic device, and more particularly to a flexible electronic device.
  • an embodiment of the present invention discloses a flexible electronic device that is resistant to bending.
  • a flexible electronic device includes a first component, a second component, and a trace.
  • the trace is electrically connected between the first component and the second component, and the trace includes a bend region and A bent portion distributed in the bent region, the bent portion of the trace forming a neutral layer of the trace in the bent region.
  • the bent portion of the trace distributed in the bending region is a neutral layer, and since the bent portion is hardly stressed, the trace is prevented from being broken in the bent region, and the extension is extended. The service life of flexible electronic devices.
  • FIG. 1 is a schematic diagram of a flexible electronic device according to a first embodiment of the present invention.
  • FIG. 2 is a schematic view of a trace of the flexible electronic device shown in FIG. 1.
  • Figure 3 is a schematic view of the end face of the trace.
  • FIG. 4 is a schematic diagram of a trace provided by a second embodiment of the present invention.
  • Fig. 5 is a schematic view showing a boundary between a first connecting portion and a second connecting portion of the first protective layer.
  • FIG. 6 is a schematic diagram of a trace provided by a third embodiment of the present invention.
  • a first embodiment of the present invention provides a flexible electronic device 10 including a first component 11 , a second component 13 , and a trace 20 .
  • the trace 20 is electrically connected to the first component 11 and the second component.
  • the trace 20 includes a bent region 201 and a bent portion 231 distributed in the bent region 201.
  • the bent portion 231 constitutes a neutral layer of the trace 20 in the bent region 201.
  • the trace 20 further includes a first protective layer 21, a trace layer 23, and a second protective layer 25.
  • the trace layer 23 is sandwiched between the first protective layer 21 and the second protective layer 25, and the trace layer 23
  • the bent portion 231 is provided, and the bent portion 231 is not subjected to the bending force in the bent region 201 to maintain the length.
  • the bending region 201 is preset in accordance with the position at which the wire 20 needs to be bent.
  • the outer layer is stretched and the inner layer is pressed. There must be a transition layer on both sides of the section that is neither untensioned nor pressed. The stress is almost equal to zero.
  • the layer is called the neutral layer of the material.
  • the first protective layer 21 located in the bending region 201 is subjected to tensile stress, and the second protective layer 21 located in the bending region 201 is subjected to compressive stress.
  • the bent portion 231 is the neutral layer of the trace 20 in the bent region 201, thereby preventing the breakage of the trace layer 23 and prolonging the service life of the flexible electronic device 10.
  • the flexible electronic device 10 is a flexible display device
  • the first member 11 is a flexible display panel.
  • the trace 20 further includes a non-bent region 203 disposed in connection with the bent region 201, and the second member 13 is a chip.
  • the flexible display device may be a flexible electronic device with a display function such as a mobile phone, a tablet computer, a reader, or the like. It can be understood that the flexible electronic device 10 can also be other flexible electronic devices; the first component 11 can be other components, such as a camera; the second component 13 can be other components, for example, the second component 13 can be a printed circuit board or the like.
  • the first member 11 includes an array substrate 111 and a color filter substrate 113 disposed opposite to the array substrate 111.
  • the array substrate 111 is a flexible array substrate. It is to be understood that the first component 11 further includes other necessary or unnecessary structures, such as liquid crystal molecules between the array substrate 111 and the color filter substrate 113, and details are not described herein.
  • the elastic modulus of the first protective layer 21 is smaller than the elastic modulus of the second protective layer 25.
  • the first protective layer 21 is made of rubber, polyimide (PI), polyamide (PA), polycarbonate (PC), polyphenylene ether sulfone (PES), polyethylene terephthalate (PET), It is made of at least one of polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), and cyclic olefin copolymer (COC). It can be understood that the first protective layer 21 can be made of rubber, polyimide (PI), polyamide (PA), polycarbonate (PC), polyphenylene ether sulfone (PES), polyethylene terephthalate. Made of at least one of (PET), polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), and cyclic olefin copolymer (COC).
  • the first protective layer 21 is made of a shape memory polymer material.
  • the first protective layer 21 is composed of polyurethane (PU), polynorbornene, trans-polyisoprene (PI), styrene-butadiene copolymer (SBS), polyolefin (PO), polycaprolactone. Made of at least one of (PCL) and polyamide (PA) and a fluorine-containing resin. It can be understood that the first protective layer 21 can be made of other polymer materials that satisfy the bending portion 231 as a neutral layer.
  • the first protective layer 21 is composed of polyurethane (PU), polynorbornene, trans-polyisoprene (PI), styrene-butadiene copolymer (SBS), polyolefin (PO), poly-self.
  • the heat-sensitive temperature of the first protective layer 21 is preferably between 45 and 55 °C. It can be understood that the first protective layer 21 can be made of a photoinduced type of shape memory polymer material. When the trace 20 is manufactured, the shape memory polymer material can be made into the first protective layer 21 by a coating process.
  • the wiring layer 23 is made of a conductive material such as a metallic material Cu.
  • the wiring layer 23 further includes a flat portion 233 that is connected to the bent portion 231.
  • the flat portion 233 is distributed in the non-bending region 203.
  • the second protective layer 25 is made of at least one of SiNx, SiCx, AlO x , BN x , BCx. It can be understood that the second protective layer 25 can be made of materials such as SiNx, SiCx, AlO x , BN x , BCx , etc., but not limited to particle toughening, fiber and whisker toughening, phase transformation toughening, composite toughening, self-toughening It can be made of any material that can satisfy the conditions after modification by nano-toughening. When the trace 20 is fabricated, the second protective layer 25 can be formed by a vapor deposition process.
  • the second protective layer 25 is made of rubber, polyimide (PI), polyamide (PA), polycarbonate (PC), polyphenylene ether sulfone (PES), polyethylene terephthalate. It is made of at least one of an alcohol ester (PET), polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), and a cyclic olefin copolymer (COC). It can be understood that the first protective layer 21 can be made of rubber, polyimide (PI), polyamide (PA), polycarbonate (PC), polyphenylene ether sulfone (PES), polyethylene terephthalate. A polymer material formed by modifying at least one of (PET), polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), and cyclic olefin copolymer (COC).
  • the second protective layer 25 is made of a shape memory polymer material, and the second protective layer 25 is made of polyurethane (PU), polynorbornene, trans-polyisoprene (PI), styrene. - at least one of butadiene copolymer (SBS), polyolefin (PO), polycaprolactone (PCL), and polyamide (PA), and a fluorine-containing resin.
  • PU polyurethane
  • PI trans-polyisoprene
  • SBS butadiene copolymer
  • PO polyolefin
  • PCL polycaprolactone
  • PA polyamide
  • fluorine-containing resin a fluorine-containing resin
  • the second protective layer 25 is composed of polyurethane (PU), polynorbornene, trans-polyisoprene (PI), styrene-butadiene copolymer (SBS), polyolefin (PO), poly-self.
  • a shape memory polymer material formed by modifying at least one of a resin lactone (PCL) and a polyamide (PA) and a fluorine-containing resin.
  • the structure of the trace 20 is such that the bend portion 231 of the trace layer 21 distributed in the bend region 201 is a neutral layer, for example, according to the bent structure formed by the bend 20 in the bend region 201.
  • the curvature, the material of the first protective layer 21, the material of the wiring layer 23, the material of the second protective layer 25, and the like can be made by changing the thickness of the first protective layer 21 and the thickness of the second protective layer 25.
  • the bent portion 231 in which the layer 21 is distributed in the bent region 201 is a neutral layer.
  • the bent portion 231 in which the wiring layer 21 is distributed in the bent region 201 is a neutral layer.
  • the second protective layer 25 forms a receiving groove 251, and the wiring layer 23 is received in the receiving groove 251, so that the wiring layer 23 is wrapped in the first protective layer 21 and the second protective layer 25. Thereby, the wiring layer 23 is further protected.
  • the second protective layer 25 may not form the receiving groove 251, and the first protective layer 21, the wiring layer 23 and the second protective layer 25 are sequentially stacked.
  • the flexible display panel can effectively increase the screen ratio and bring a better visual experience to the user, due to the flexible substrate of the flexible display panel, the wiring connected to the flexible display panel In the case of long-term static bending, the stress acts to cause the trace to be easily broken or to change the resistivity.
  • the flexible electronic device 10 and the trace 20 provided by the embodiment of the present invention are provided with a first protective layer 21 and a second protective layer 25 on the wiring layer 23, and the bent portion 231 constitutes the trace 20 in the bent region 201. Since the bending portion 231 is hardly stressed, the bending of the wire 20 in the bending region 201 is prevented, and the service life of the flexible electronic device 10 is prolonged. In addition, since the bent portion 231 is hardly stressed, the resistivity of the trace 20 does not change, and the performance of the flexible electronic device 10 is ensured.
  • a second embodiment of the present invention provides a trace 40.
  • the trace 40 is similar to the trace 20 provided in the first embodiment.
  • the trace 40 includes a first protective layer 41, a trace layer 43, and a second protective layer 45.
  • the trace 40 further includes a bent region 401 and a non-bent region 403 disposed in connection with the bent region 401.
  • the wiring layer 43 includes a bent portion 431 distributed in the bent region 401, and the bent portion 431 constitutes a neutral layer of the trace 40 in the bent region 401.
  • the first protective layer 41 includes a first connecting portion 411 and a second connecting portion 413 connected to the first connecting portion 411.
  • the elastic modulus of the first connecting portion 411 is greater than the elastic modulus of the second connecting portion 413.
  • the first connecting portion 411 is distributed in the non-bending region 403, and the second connecting portion 413 extends from the non-bending region 403 to the bending region 401, so that the boundary between the first connecting portion 411 and the second connecting portion 413 is located in the non-bent portion. Folded area 403.
  • the second connecting portion 413 extends from a portion of the non-bending region 403 near the bending region 401 to the bending region 401, and extends through the bending region 401 to extend to the non-bending region on the other side of the bending region 401.
  • the first connecting portion 411 can be made of a first material
  • the second connecting portion 413 is made of a second material different from the first material, for example, the first material has a large modulus of elasticity.
  • the second material is a polymer material having a small elastic modulus.
  • the first connecting portion 411 and the second connecting portion 413 can be made of the same material.
  • the first connecting portion 411 is made of a reinforced modified polymer material
  • the second connecting portion 413 is not reinforced. Made of modified polymer materials.
  • the second protective layer 45 includes a third connecting portion 451 and a fourth connecting portion 453 connected to the third connecting portion 451.
  • the elastic modulus of the third connecting portion 451 is greater than the elastic modulus of the fourth connecting portion 453.
  • the third connecting portion 451 is distributed in the non-bending region 403, and the fourth connecting portion 453 extends from the non-bending region 403 to the bending region 401, and further the boundary between the third connecting portion 451 and the fourth connecting portion 453 Located in the non-bending area 403.
  • the fourth connecting portion 453 extends from a portion of the non-bending region 403 near the bending region 401 to the bending region 401, and extends through the bending region 401 to extend to the other side of the bending region 401.
  • the fourth connecting portion 453 has a larger modulus of elasticity than the second connecting portion 413.
  • the third connecting portion 451 is made of a third material
  • the fourth connecting portion 453 is made of a fourth material different from the third material, for example, the third material is made of an inorganic material having a large elastic modulus.
  • the fourth material is made of a polymer material having a small elastic modulus.
  • first material and the third material may be the same.
  • the third connecting portion 451 and the fourth connecting portion 453 can be made of the same material.
  • the third connecting portion 451 is made of a reinforced modified polymer material
  • the fourth connecting portion 453 is not reinforced. Made of modified polymer materials.
  • first connecting portion 411, the second connecting portion 413, the third connecting portion 451, and the fourth connecting portion 453 distributed in the region of the trace 20 materials having different elastic moduli are selected, and the breakage of the trace 40 can be effectively prevented.
  • the first connecting portion 411 is provided with a first slot 415 adjacent to the end of the second connecting portion 413, and a first connecting wall 416 is formed at the top end of the end portion of the first connecting portion 411.
  • the second connecting portion 413 is formed.
  • a second groove 417 is provided adjacent to the end of the first connecting portion 411, and a second connecting wall 418 is formed at the top end of the end of the second connecting portion 413.
  • the second connecting wall 418 of the second connecting portion 413 is received in the first slot 415.
  • the first connecting wall 416 of the first connecting portion 411 is received in the second slot 417, and the first connecting portion 411 is connected to the second connecting portion 411.
  • the portion 413 forms a snap-type connection structure at the interface to strengthen the connection strength between the first connection portion 411 and the second connection portion 413.
  • first connecting portion 411 and the second connecting portion 413 can also be connected by other structures.
  • the end surface of the first connecting portion 411 and the end surface of the second connecting portion 413 are both planar, and the end surface of the first connecting portion 411 is The end faces of the two connecting portions 413 are connected.
  • the third connecting portion 451 and the fourth connecting portion 453 adopt the same connection manner of the first connecting portion 411 and the second connecting portion 413 at the boundary between the two, that is, the third connecting portion 451 is adjacent to the fourth connecting portion.
  • the end of the portion 453 is provided with a third groove (not shown), and a third connecting wall (not shown) is formed at the top end of the end of the first connecting portion 411, and the fourth connecting portion 453 is adjacent to the third connecting portion.
  • a fourth groove is formed at an end of the 451, and a fourth connecting wall (not shown) is formed at a top end of the end of the fourth connecting portion 411, and the fourth connecting portion 453 is adjacent to the end of the third connecting portion 451.
  • the third connecting portion 451 is received in the fourth slot adjacent to the end of the fourth connecting portion 453, and the third connecting portion 451 and the fourth connecting portion 453 form a card at the interface.
  • the connection structure is connected to strengthen the connection strength between the third connection portion 451 and the fourth connection portion 453.
  • a third embodiment of the present invention provides a trace 60 that includes a bent portion 631 and a flat portion 633 connected to the bent portion 631 .
  • the trace 60 further includes a bend region 601 and the non-bend region 603 connected to the bend region 601.
  • the bent portion 631 is distributed/located in the bent region 631, and the flat portion 633 is distributed/located in the non-bent region 603.
  • the bent portion 631 constitutes a neutral layer of the trace 60 in the bent region 601.
  • the material of the bent portion 631 is made of a shape memory alloy material, such as a Cu-Zn alloy material, an Au-Cd alloy material, an Ag-Cd alloy material, a Cu-Zn-Sn alloy material, a Cu-Zn-Al alloy material, Cu. a Zn-Si alloy material, a Cu-Sn alloy material, and a shape memory alloy material doped, but not limited to, Ga, Ni, Al, Si, etc., in which each of the transformation temperatures meets the conditions.
  • the metamorphic temperature of the shape memory alloy material is preferably between 30 and 45 ° C, and the shape of the bent portion 631 is prevented from changing.
  • the flat portion 633 is made of a common metal and/or alloy material.
  • Ordinary metal materials can be selected but not limited to Cu, Ti, Al, Au, Ag and their alloy materials
  • the resistivity at the bent portion 631 is the same as the resistivity of the flat portion 633.
  • the material from which the bent portion 631 is made is the same as the material from which the flat portion 633 is formed. It can be understood that the material of the bent portion 631 and the flat portion 633 may both be shape memory alloy materials.
  • the bent portion 631 of the trace 60 made of the shape memory alloy material can be shaped at its metamorphic temperature, and can be qualitatively used at room temperature, thereby reducing the stress on the trace of the trace 60 during static bending.
  • the continuous damage of 60, and the self-heating of the flexible electronic device (not shown), can restore the original shape of the trace 60 to achieve self-healing.

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Abstract

本发明公开一种柔性电子装置,其包括第一部件、第二部件及走线,所述走线电性连接于所述第一部件及所述第二部件之间,所述走线包括弯折区域及分布于所述弯折区域的弯折部,所述走线的弯折部构成所述走线在弯折区域的中性层,进而避免走线断裂,延长了所述柔性电子装置的使用寿命。

Description

柔性电子装置 技术领域
本发明涉及一种电子装置,特别涉及一种柔性电子装置。
背景技术
电子装置中,部件之间通过走线实现电性连接,从而实现通信和控制。现在,具有可弯折性的柔性电子装置已经出现,例如,柔性显示装置,所述柔性显示装置的柔性高屏占比显示器不仅能弯折,还可以给使用者以强烈的视觉冲击。然而,目前的柔性显示装置中,对于柔性屏幕,由于基底为柔性的,可弯折区域更大,走线在长期静态弯折的情况下,由于受到较大的拉伸力或压缩力,容易出现断裂或改变电阻率的现象,影响柔性电子装置的使用寿命。
发明内容
为解决上述问题,本发明实施例公开一种耐弯折的柔性电子装置。
一种柔性电子装置,其包括第一部件、第二部件及走线,所述走线电性连接于所述第一部件及所述第二部件之间,所述走线包括弯折区域及分布于所述弯折区域的弯折部,所述走线的弯折部构成所述走线在所述弯折区域的中性层。
本发明实施例提供的柔性电子装置,走线分布于弯折区域的弯折部为中性层,由于所述弯折部几乎不受应力,避免走线在弯折区域断裂,延长了所述柔性电子装置的使用寿命。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明第一实施例提供的柔性电子装置的示意图。
图2为图1所示的柔性电子装置的走线的示意图。
图3为走线的端面示意图。
图4为本发明第二实施例提供的走线的示意图。
图5为第一保护层的第一连接部与第二连接部的交界处的示意图。
图6为本发明第三实施例提供的走线的示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1,本发明第一实施例提供一种柔性电子装置10,其包括第一部件11、第二部件13及走线20,走线20电性连接于第一部件11及第二部件13之间,请一并参阅图2,走线20包括弯折区域201及分布于弯折区域201的弯折部231,弯折部231构成走线20在弯折区域201的中性层。
具体的,走线20还包括第一保护层21、走线层23及第二保护层25,走线层23夹设于第一保护层21及第二保护层25之间,走线层23设弯折部231,弯折部231在弯折区域201不受到弯曲力而保持长度不变。其中,弯折区域201根据走线20需要弯折的位置进行预先设置。
依据材料弯曲理论,材料在弯曲过程中,外层受拉伸,内层受挤压,在其断面上必然会有一个既不受拉,又不受压的过渡层,应力几乎等于零,这个过渡层称为材料的中性层。
在本实施方式中,走线20在弯折区域201形成的弯折结构中,位于弯折区域201的第一保护层21承受拉应力,位于弯折区域201的第二保护层21承受压应力,弯折部231即为走线20在弯折区域201的中性层,进而避免走线层23断裂,延长柔性电子装置10的使用寿命。
本实施方式中,柔性电子装置10为柔性显示装置,第一部件11为柔性显示面板。走线20还包括与弯折区域201连接设置的非弯折区域203,第二部 件13为一芯片。所述柔性显示装置可以为手机、平板电脑、阅读器等等具显示功能的柔性电子装置。可以理解,柔性电子装置10亦可以为其它柔性电子装置;第一部件11可以为其他部件,例如摄像头;第二部件13可以为其他部件,例如第二部件13可以为印刷电路板等等。
第一部件11包括阵列基板111及与阵列基板111相对设置的彩膜基板113。阵列基板111为一柔性阵列基板。可以理解,第一部件11还包括其他必要或非必要结构,例如位于阵列基板111与彩膜基板113之间的液晶分子,在此不作赘述。
本实施方式中,第一保护层21的弹性模量小于第二保护层25的弹性模量。
第一保护层21由橡胶、聚酰亚胺(PI)、聚酰胺(PA)、聚碳酸酯(PC)、聚苯醚砜(PES)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚甲基丙烯酸甲酯(PMMA)、环烯烃共聚物(COC)中的至少一种制成。可以理解,第一保护层21可以由橡胶、聚酰亚胺(PI)、聚酰胺(PA)、聚碳酸酯(PC)、聚苯醚砜(PES)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚甲基丙烯酸甲酯(PMMA)、环烯烃共聚物(COC)中的至少一种经处理改性后的材料制成。
在一实施方式中,第一保护层21由形状记忆高分子材料制成。第一保护层21由聚氨酯(PU)、聚降冰片烯、反式聚异戊二烯(PI)、苯乙烯-丁二烯共聚物(SBS)、聚烯烃(PO)、聚己酸内脂(PCL)和聚酰胺(PA)和含氟树脂中的至少一种制成。可以理解,第一保护层21可以由其它满足使弯折部231成为中性层的高分子材料制成。可以理解,第一保护层21由聚氨酯(PU)、聚降冰片烯、反式聚异戊二烯(PI)、苯乙烯-丁二烯共聚物(SBS)、聚烯烃(PO)、聚己酸内脂(PCL)和聚酰胺(PA)和含氟树脂中的至少一种经改性后形成的高分子材料制成。当第一保护层21由热致感应型(SMP)的形状记忆高分子材料制成时,第一保护层21的热感应温度应该在柔性电子装置10的使用温度之上,避免走线20的第一保护层21的形态发生变化。第一保护层21的热感应温度优选在45~55℃之间。可以理解,第一保护层21可以由光致感应型的形状记忆高分子材料制成。制造走线20时,所述形状记忆高分子材料可通过涂布工艺实现制成第一保护层21。
走线层23由导电材料制成,例如金属材料Cu。走线层23还包括与弯折部231连接的平坦部233。所述平坦部233分布于所述非弯折区域203。
第二保护层25由SiNx、SiCx、AlO x、BN x、BCx中的至少一种制成。可以理解,第二保护层25可以由SiNx、SiCx、AlO x、BN x、BCx等材料经过但不限于颗粒增韧、纤维和晶须增韧、相变增韧、复合增韧、自增韧、纳米增韧等方式改性后的任何一种可满足条件的材料制成。制造走线20时,可通过气相沉积工艺实现制成第二保护层25。
在一实施例中,第二保护层25由橡胶、聚酰亚胺(PI)、聚酰胺(PA)、聚碳酸酯(PC)、聚苯醚砜(PES)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚甲基丙烯酸甲酯(PMMA)、环烯烃共聚物(COC)中的至少一种制成。可以理解,第一保护层21可以由橡胶、聚酰亚胺(PI)、聚酰胺(PA)、聚碳酸酯(PC)、聚苯醚砜(PES)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚甲基丙烯酸甲酯(PMMA)、环烯烃共聚物(COC)中的至少一种经改性后形成的高分子材料制成。
在另一实施例中,第二保护层25由形状记忆高分子材料制成,第二保护层25由聚氨酯(PU)、聚降冰片烯、反式聚异戊二烯(PI)、苯乙烯-丁二烯共聚物(SBS)、聚烯烃(PO)、聚己酸内脂(PCL)和聚酰胺(PA)和含氟树脂中的至少一种制成。可以理解,第二保护层25可以由其它满足使弯折部231成为中性层的高分子材料制成。可以理解,第二保护层25由聚氨酯(PU)、聚降冰片烯、反式聚异戊二烯(PI)、苯乙烯-丁二烯共聚物(SBS)、聚烯烃(PO)、聚己酸内脂(PCL)和聚酰胺(PA)和含氟树脂中的至少一种经改性后形成的形状记忆高分子材料制成。当第二保护层25由热致感应型(SMP)的形状记忆高分子材料制成时,第二保护层25的热感应温度应该在柔性电子装置10的使用温度之上,避免走线20的第二保护层25的形态发生变化。第二保护层25的热感应温度优选于在45~55℃之间。可以理解,第二保护层25可以由光致感应型的形状记忆高分子材料制成。
由于中性层在走线层23的位置受走线层23、第一保护层21、第二保护层25的材料、厚度等因素影响,在制造柔性电子装置10前,通过计算模拟或者实验获取走线20的结构,使所述走线层21分布于弯折区域201的弯折部231 为中性层,例如,依据走线20在弯折区域201所需弯折形成的弯折结构的曲率、第一保护层21的材料、走线层23的材料、第二保护层25的材料等,可以通过改变第一保护层21的厚度、第二保护层25的厚度,使所述走线层21分布于弯折区域201的弯折部231为中性层。可以理解,可以依据走线20在弯折区域201所需弯折形成的弯折结构的曲率、第一保护层21的厚度、走线层23的材料及厚度、第二保护层25的厚度等,通过改变第一保护层21的材料、第二保护层25的材料,使所述走线层21分布于弯折区域201的弯折部231为中性层。
进一步地,请参阅图3,第二保护层25形成一个收容槽251,走线层23容纳于所述收容槽251,使得走线层23处于第一保护层21与第二保护层25的包裹中,进而使走线层23得到更好的保护。在一实施例中,第二保护层25可不形成收容槽251,第一保护层21、走线层23及第二保护层25依次层叠设置。
现有技术的柔性显示装置中,虽然采用柔性显示面板能够有效提高屏占比,给用户带来更好的视觉体验,但是由于柔性显示面板的柔性基底,与所述柔性显示面板连接的走线在长期静态弯折情况下,应力作用会使所述走线容易断裂、或改变电阻率。
本发明实施例提供的柔性电子装置10及走线20,通过于走线层23上设第一保护层21及第二保护层25,弯折部231构成走线20在弯折区域201的中性层,由于弯折部231几乎不受应力,避免走线20在弯折区域201断裂,延长了柔性电子装置10的使用寿命。另外,由于弯折部231几乎不受应力,进而走线20的电阻率亦不会改变,保证了柔性电子装置10的性能。
请参阅图4,本发明第二实施例提供一种走线40。走线40与第一实施例提供的走线20相似,走线40包括第一保护层41、走线层43及第二保护层45。走线40还包括弯折区域401及与弯折区域401连接设置的非弯折区域403。所述走线层43包括分布于弯折区域401的弯折部431,所述弯折部431构成走线40在弯折区域401的中性层。
不同在于,所述第一保护层41包括第一连接部411及与第一连接部411连接的第二连接部413,第一连接部411的弹性模量大于第二连接部413的弹 性模量,第一连接部411分布于非弯折区域403,第二连接部413从非弯折区域403延伸至弯折区域401,进而第一连接部411与第二连接部413的交界处位于非弯折区域403。具体的,第二连接部413从非弯折区域403靠近弯折区域401的部位延伸至弯折区域401,并延伸经过弯折区域401后延伸至弯折区域401另一侧的非弯折区域403的靠近弯折区域401的部位。可以理解,第一连接部411可以由第一材料制成,第二连接部413由不同于所述第一材料的第二材料制成,例如,所述第一材料为弹性模量较大的无机材料,所述第二材料为弹性模量较小的高分子材料。可以理解,第一连接部411与第二连接部413可以由同一种材料制成,例如,第一连接部411由经过强化改性的高分子材料制成,第二连接部413由未经过强化改性的高分子材料制成。
进一步地,第二保护层45包括第三连接部451及与第三连接部451连接的第四连接部453,第三连接部451的弹性模量大于所述第四连接部453的弹性模量,第三连接部451分布于非弯折区域403,所述第四连接部453从非弯折区域403延伸至弯折区域401,进而第三连接部451与所述第四连接部453的交界处位于非弯折区域403。具体的,所述第四连接部453从非弯折区域403靠近弯折区域401的部位延伸至弯折区域401,并延伸经过弯折区域401后延伸至弯折区域401另一侧的非弯折区域403的靠近弯折区域401的部位。所述第四连接部453的弹性模量大于第二连接部413。第三连接部451由第三材料制成,第四连接部453由不同于所述第三材料的第四材料制成,例如,所述第三材料为弹性模量较大的无机材料制成,所述第四材料为弹性模量较小的高分子材料制成。
可以理解,所述第一材料与所述第三材料可以相同。
可以理解,第三连接部451与第四连接部453可以由同一种材料制成,例如,第三连接部451由经过强化改性的高分子材料制成,第四连接部453由未经过强化改性的高分子材料制成。
依据第一连接部411、第二连接部413、第三连接部451及第四连接部453分布于走线20的区域,选择弹性模量不同的材料,能够有效避免走线40的断裂,延长具走线40的柔性电子装置的使用寿命。
请参阅图5,第一连接部411邻近第二连接部413的端部设有第一槽415, 而在第一连接部411的端部的顶端形成第一连接壁416,第二连接部413邻近第一连接部411的端部设第二槽417,而在第二连接部413的端部的顶端形成第二连接壁418。第二连接部413的第二连接壁418容纳于所述第一槽415,第一连接部411的第一连接壁416容纳于所述第二槽417,进而第一连接部411与第二连接部413在交界处形成卡接式的连接结构,以加强第一连接部411与第二连接部413的连接强度。可以理解,第一连接部411与第二连接部413也可以以其它结构连接,例如第一连接部411的端面与第二连接部413的端面均为平面,第一连接部411的端面与第二连接部413的端面连接。
进一步地,第三连接部451与第四连接部453在两者的交界处采用第一连接部411与第二连接部413的相同的连接方式,即第三连接部451邻近所述第四连接部453的端部设有第三槽(图未示),在第一连接部411的端部的顶端形成第三连接壁(图未示),所述第四连接部453邻近第三连接部451的端部设第四槽,在所述第四连接部411的端部的顶端形成第四连接壁(图未示),所述第四连接部453邻近第三连接部451的端部容纳于所述第三槽,第三连接部451邻近所述第四连接部453的端部容纳于所述第四槽,进而第三连接部451与所述第四连接部453在交界处形成卡接式的连接结构,以加强第三连接部451与第四连接部453的连接强度。
请参阅图6,本发明第三实施例提供一种走线60,所述走线60包括弯折部631及与弯折部631连接的平坦部633。所述走线60还包括弯折区域601及与所述弯折区域601连接的所述非弯折区域603。弯折部631分布/位于弯折区域631,平坦部633分布/位于非弯折区域603。所述弯折部631构成走线60在所述弯折区域601的中性层。
弯折部631的材料由形状记忆合金材料制成,例如Cu-Zn合金材料、Au-Cd合金材料、Ag-Cd合金材料、Cu-Zn-Sn合金材料、Cu-Zn-Al合金材料、Cu-Zn-Si合金材料,Cu-Sn合金材料以及掺杂但不限于Ga、Ni、Al、Si等使其变态温度符合条件的各个体系的形状记忆合金材料。所述形状记忆合金材料的变态温度优选在30~45℃之间,避免弯折部631的形态发生变化。
平坦部633由普通金属及/或合金材料制成。普通金属材料可选择但不限于Cu、Ti、Al、Au、Ag及其合金材料
进一步地,位于弯折部631的电阻率与平坦部633的电阻率相同。制成弯折部631的材料与制成平坦部633的材料属于同系。可以理解,弯折部631与平坦部633的材料可以均为形状记忆合金材料。
由所述形状记忆合金材料制成的走线60的弯折部631,能够实现在其变态温度上塑形,实现在室温下定性使用,减少了走线60在静态弯折时应力对走线60的持续损伤,并且能够在柔性电子装置(图未示)的自发热下,恢复走线60的原本形状,实现自我修复。
以上所述是本发明的优选实施例,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。

Claims (19)

  1. 一种柔性电子装置,其特征在于,包括第一部件、第二部件及走线,所述走线电性连接于所述第一部件及所述第二部件之间,所述走线包括弯折区域及分布于所述弯折区域的弯折部,所述走线的弯折部构成所述走线在所述弯折区域的中性层。
  2. 如权利要求1所述的柔性电子装置,其特征在于,所述走线还包括第一保护层、走线层及第二保护层,所述走线层包括所述弯折部。
  3. 如权利要求2所述的柔性电子装置,其特征在于,位于所述弯折区域的第一保护层的弹性模量小于位于所述弯折区域的第二保护层的弹性模量。
  4. 如权利要求3所述的柔性电子装置,其特征在于,所述第一保护层由橡胶、聚酰亚胺、聚酰胺、聚碳酸酯、聚苯醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚甲基丙烯酸甲酯、环烯烃共聚物中的至少一种制成。
  5. 如权利要求3所述的柔性电子装置,其特征在于,所述第一保护层由形状记忆高分子材料制成。
  6. 如权利要求5所述的柔性电子装置,其特征在于,所述第一保护层由聚氨酯、聚降冰片烯、反式聚异戊二烯、苯乙烯-丁二烯共聚物、聚烯烃、聚己酸内脂和聚酰胺和含氟树脂中的至少一种制成。
  7. 如权利要求5所述的柔性电子装置,其特征在于,所述第一保护层的热感应温度在45~55℃之间。
  8. 如权利要求3所述的柔性电子装置,其特征在于,所述第二保护层由SiNx、SiCx、AlO x、BN x、BCx中的至少一种制成。
  9. 如权利要求3所述的柔性电子装置,其特征在于,所述第二保护层由橡胶、聚酰亚胺、聚酰胺、聚碳酸酯、聚苯醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚甲基丙烯酸甲酯、环烯烃共聚物中的至少一种制成。
  10. 如权利要求3所述的柔性电子装置,其特征在于,所述第二保护层由形状记忆高分子材料制成。
  11. 如权利要求10所述的柔性电子装置,其特征在于,所述第二保护层由聚氨酯、聚降冰片烯、反式聚异戊二烯、苯乙烯-丁二烯共聚物、聚烯烃、 聚己酸内脂和聚酰胺和含氟树脂中的至少一种制成。
  12. 如权利要求2所述的柔性电子装置,其特征在于,所述走线还包括与所述弯折区域连接的非弯折区域,所述第一保护层包括第一连接部及与所述第一连接部连接的第二连接部,所述第一连接部的弹性模量大于所述第二连接部的弹性模量,所述第一连接部分布于所述非弯折区域,所述第二连接部从所述非弯折区域延伸至所述弯折区域。
  13. 如权利要求12所述的柔性电子装置,其特征在于,所述第二保护层包括第三连接部及与所述第三连接部连接的第四连接部,所述第三连接部的弹性模量大于所述第四连接部的弹性模量,所述第三连接部分布于所述非弯折区域,所述第四连接部从所述非弯折区域延伸至所述弯折区域。
  14. 如权利要求12所述的柔性电子装置,其特征在于,所述第一连接部邻近所述第二连接部的端部设有第一槽,所述第二连接部邻近所述第一连接部的端部设第二槽,所述第二连接部邻近所述第一连接部的端部容纳于所述第一槽,所述第二连接部邻近所述第二连接部的端部容纳于所述第二槽。
  15. 如权利要求1所述的柔性电子装置,其特征在于,所述弯折部由形状记忆合金材料制成。
  16. 如权利要求15所述的柔性电子装置,其特征在于,所述走线还包括与所述弯折部连接的平坦部,所述平坦部由Cu、Ti、Al、Au、Ag中的至少一种制成。
  17. 如权利要求15所述的柔性电子装置,其特征在于,所述形状记忆合金材料的变态温度在30~45℃。
  18. 如权利要求15所述的柔性电子装置,其特征在于,所述形状记忆合金材料为Cu-Zn合金材料、Au-Cd合金材料、Ag-Cd合金材料、Cu-Zn-Sn合金材料、Cu-Zn-Al合金材料、Cu-Zn-Si合金材料,Cu-Sn合金材料中的至少一种。
  19. 如权利要求1所述的柔性电子装置,其特征在于,所述第一部件为柔性显示面板。
PCT/CN2018/074478 2018-01-29 2018-01-29 柔性电子装置 WO2019144413A1 (zh)

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CN114783293A (zh) * 2022-04-21 2022-07-22 武汉天马微电子有限公司 显示模组及显示装置

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