WO2019141190A1

WO2019141190A1 - Method and device for controlling power supply of power amplifier

Info

Publication number: WO2019141190A1
Application number: PCT/CN2019/071976
Authority: WO
Inventors: 占伟
Original assignee: 中兴通讯股份有限公司
Priority date: 2018-01-16
Filing date: 2019-01-16
Publication date: 2019-07-25
Also published as: CN110048677B; CN110048677A

Abstract

A method and a device for controlling power supply of a power amplifier, pertaining to the field of communications. The method comprises: upon energization of a power amplifier, converting an input voltage into a gate voltage for supplying power to a gate of the power amplifier (S101); determining whether the gate voltage meets a voltage requirement for triggering energization of a drain of the power amplifier (S102); and if so, converting the input voltage into a drain voltage for supplying power to the drain (S103). The invention eliminates the need for a delay start circuit, a MOS transistor on a Vd line, or an output large-capacity energy storage capacitor for Vg while meeting the requirement for an energization and de-energization timing sequence of a power amplifier, thereby improving circuit reliability, and reducing the area and cost of a single board.

Description

Power amplifier power supply control method and device

The present application claims priority to Chinese Patent Application No. CN201810037692.5, filed on Jan. 16, s.

Technical field

The present invention relates to the field of communications, and in particular, to a power amplifier power supply control method and apparatus.

Background technique

At present, the power amplifier commonly used in the field of radio frequency is mainly LDMOS (Lateral double-diffused metal-oxide semiconductor). Such power amplifier tube technology is relatively mature, and the efficiency and frequency band increase are relatively difficult. And GaN (gallium nitride), a new material, can further improve efficiency and frequency bands. GaN is a third-generation semiconductor material with broadband semiconductor characteristics, high saturation electron mobility, and higher breakdown voltage. GaN materials also have high thermal conductivity, which allows GaN power amplifier tubes to withstand higher temperatures. Higher power capacity. However, the Vg (gate voltage) and Vd (drain voltage) of the GaN power amplifier have strict requirements on the power-on and power-off timing. For details, see Figure 1. When power-on, Vd needs to wait for Vg to drop to V1 before powering up. When Vg rises to V2, the Vd voltage needs to drop below V3.

The prior art provides a method for realizing GaN power-up and timing, as shown in FIG. 2 . The technology controls a slow-start chip through Vg, and the MOS (metal oxide semiconductor) switch on the Vd line is controlled by the slow-start chip, and the Vg needs to place a large-capacity storage capacitor to meet the power-down timing. The disadvantage of this scheme is that the slow-start chip, MOS and large-capacity storage capacitor have large footprint and high cost, and MOS is easy to fail when over-current or short-circuit occurs in the latter stage. At the same time, the capacity of the large-capacity storage capacitor is high in the power amplifier. The environment is also a big problem.

Summary of the invention

The power amplifier power supply control method and device provided by the embodiment of the invention solve the problem that the power supply timing of the power amplifier Vg and Vd has low reliability, large board area and high cost.

A power amplifier power supply control method according to an embodiment of the present invention includes:

When the power amplifier is powered on, the input voltage is converted into a gate voltage for supplying power to the power amplifier gate;

Determining whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level;

If it is determined that the gate voltage satisfies a voltage requirement for triggering power-on of the power amplifier drain level, the input voltage is converted into a drain voltage for supplying the drain level.

Preferably, the converting the input voltage into a gate voltage for powering the power amplifier gate comprises:

If the gate voltage undervoltage shutdown module determines that the input voltage rises to the gate voltage undervoltage protection point, the gate voltage conversion module converts the input voltage into the gate voltage and outputs to the gate of the power amplifier.

Preferably, the determining whether the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered includes:

If the enabling unit determines that the gate voltage drops to a trigger point for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage rises to a drain undervoltage protection point, determining that the trigger is satisfied Power amplifier leakage level power requirements.

Preferably, the method further includes:

When the power amplifier is powered off, according to the gate voltage undervoltage protection point and the drain undervoltage protection point, the start time of controlling the gate power-off is delayed from the start time of the drain power-down.

Preferably, according to the gate voltage undervoltage protection point and the drain undervoltage protection point, controlling a start time of the gate power-off lags a start time of the drain-level power-down includes:

If the drain-voltage undervoltage shutdown unit determines that the input voltage drops to the drain-undervoltage protection point, the drain-voltage conversion module stops converting the input voltage into the power for powering the drain Leaking the voltage to cause the drain to be powered down;

If the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops converting the input voltage to be used to power the gate The gate voltage causes the gate to be powered down;

Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.

Preferably, the power amplifier is a GaN power amplifier or an LDMOS power amplifier or a GaAs power amplifier.

A power amplifier power supply control apparatus according to an embodiment of the invention includes:

a gate voltage conversion module, configured to convert an input voltage into a gate voltage for powering a power amplifier gate when the power amplifier is powered on;

a leakage voltage triggering module, configured to determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level;

And a leakage voltage conversion module, configured to convert the input voltage into a drain voltage for supplying the drain level if it is determined that the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered.

Preferably, the device further comprises:

a gate voltage undervoltage shutdown module for determining whether the input voltage rises to a gate voltage undervoltage protection point;

Wherein, if the gate voltage undervoltage shutdown module determines that the input voltage rises to the gate voltage undervoltage protection point, the gate voltage conversion module converts the input voltage into the gate voltage, and outputs To the gate of the power amplifier.

Preferably, the leakage pressure triggering module comprises:

An enabling unit, configured to determine whether the gate voltage drops to a trigger point for supplying the drain level;

a drain-voltage undervoltage shutdown unit for determining whether the input voltage rises to a leakage undervoltage protection point;

Wherein, if the enabling unit determines that the gate voltage drops to a trigger point for supplying power to the drain stage, and the drain undervoltage shutdown unit determines that the input voltage rises to the drain undervoltage protection And the drain voltage conversion module converts the input voltage into the drain voltage.

Preferably, the drain-voltage undervoltage shutdown unit is further configured to determine whether the input voltage drops to the leakage undervoltage protection point;

The gate undervoltage shutdown module is further configured to determine whether the input voltage drops to less than the gate voltage undervoltage protection point of the drain undervoltage protection point;

Wherein, if the drain-voltage undervoltage shutdown unit determines that the input voltage drops to the drain-voltage undervoltage protection point, the drain-voltage conversion module stops converting the input voltage into a power supply for the drain The drain voltage is powered down; if the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops Converting the input voltage to the gate voltage for powering the gate to power down the gate;

The technical solution provided by the embodiment of the invention has the following beneficial effects:

The embodiment of the invention saves the slow start circuit, the MOS and Vg output large-capacity storage capacitors on the Vd line under the premise of satisfying the power-on and power-off timing of the power amplifier, improves the circuit reliability, and saves the board area and cost.

DRAWINGS

Figure 1 is the power supply timing required for GaN power amplifiers Vg and Vd;

2 is a working block diagram provided by the prior art;

3 is a flowchart of power-on control of a power amplifier according to an embodiment of the present invention;

4 is a flowchart of a power amplifier power-off control according to an embodiment of the present invention;

5 is a block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention;

6 is a working block diagram of a power amplifier power supply control device according to an embodiment of the present invention;

FIG. 7 is a flowchart of the power-on and power-off sequence operation according to the embodiment of the present invention.

Detailed ways

The preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings.

FIG. 3 is a flowchart of power-on control of a power amplifier according to an embodiment of the present invention. As shown in FIG. 3, the steps include:

Step S101: When the power amplifier is powered on, the input voltage is converted into a gate voltage for supplying power to the power amplifier gate.

At the time of power-on, if the gate voltage undervoltage shutdown module determines that the input voltage Vin rises to the gate voltage undervoltage protection point Vuvlo2, the gate voltage conversion module converts the input voltage Vin into the gate voltage Vg, and outputs To the gate of the power amplifier. Further, if Vin is greater than or equal to Vuvlo2, the gate voltage conversion module operates to perform voltage conversion.

Step S102: Determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level.

If the enabling unit determines that the gate voltage Vg falls to the trigger point V1 for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage Vin rises to the drain undervoltage protection point Vuvlo1, then determining The requirement for triggering the power leakage level of the power amplifier is met. Further, if Vg is less than or equal to V1, and Vin is greater than or equal to Vuvlo1, it is determined that the requirement to trigger the power amplifier drain level to be powered up is satisfied.

Step S103: If it is determined that the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level, converting the input voltage into a drain voltage for supplying the drain level.

If it is determined that the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain stage, the drain voltage conversion module converts the input voltage Vin into a drain-level voltage Vd for supplying the drain level, and outputs the The leakage level of the power amplifier.

The embodiment of the present invention may further control that the power amplifier is powered off, specifically, according to the gate voltage undervoltage protection point and the leakage undervoltage protection point, controlling a start time of the gate power failure to lag behind the drain The start time of the stage power-down to meet the power-down timing requirements of the power amplifier. FIG. 4 is a flowchart of power-off control of a power amplifier according to an embodiment of the present invention, as shown in FIG. 4, including:

Step S201: If the drain-voltage undervoltage shutdown unit determines that the input voltage Vin falls to the drain-voltage undervoltage protection point Vuvlo1, the leakage voltage conversion module stops converting the input voltage Vin into The drain-level voltage Vd supplied from the drain causes the drain to be powered down. That is, if Vin is smaller than Vuvlo1, the gate voltage conversion module is turned off.

Step S202: after the drain stage starts to be powered down, the input voltage Vin drops until the gate voltage undervoltage protection point falls, then the gate voltage conversion module stops converting the input voltage Vin into The gate voltage Vg that supplies the gate causes the gate to be powered down. That is, if Vin is less than Vuvlo2, the gate voltage conversion module is turned off.

FIG. 5 is a block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention. As shown in FIG. 5, the method specifically includes:

The gate voltage conversion module is used to convert the input voltage into a gate voltage for powering the power amplifier gate when the power amplifier is powered on.

The leakage voltage triggering module is configured to determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level.

The apparatus also includes a gate voltage undervoltage shutdown module for determining whether the input voltage rises to a gate voltage undervoltage protection point.

The leakage pressure trigger module includes:

A drain-voltage undervoltage shutdown unit is configured to determine whether the input voltage rises to a drain undervoltage protection point.

At the time of power-on, the workflow of the device includes: if the gate voltage undervoltage shutdown module determines that the input voltage Vin rises to the gate voltage undervoltage protection point Vuvlo2, the gate voltage conversion module converts the input voltage Vin into a The gate voltage Vg is output to the gate of the power amplifier. As the input voltage Vin rises, Vg decreases, and if the enabling unit determines that the gate voltage Vg falls to the trigger point V1 for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage Vin rises to The leakage undervoltage protection point Vuvlo1 is judged to meet the requirement of triggering the power amplifier leakage level to be powered. At this time, the leakage voltage conversion module converts the input voltage Vin into a drain voltage Vd for supplying the drain level. And output to the drain level of the power amplifier.

The embodiment of the invention utilizes Vg to enable the input power of the power amplifier drain stage, and can meet the power-on timing requirements of the power amplifier.

Further, the drain-voltage undervoltage shutdown unit is further configured to determine whether the input voltage drops to the drain-voltage undervoltage protection point, and the gate under-voltage shutdown module is further configured to determine whether the input voltage is Drop to the gate voltage undervoltage protection point. Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.

When the power is off, the working process of the device includes: if the leakage undervoltage shutdown unit determines that the input voltage Vin falls to the leakage undervoltage protection point Vuvlo1, the leakage pressure conversion module stops the input Converting a voltage Vin to the drain voltage Vd for powering the drain, causing the drain to be powered down; as the input voltage Vin drops, if the gate undervoltage shutdown module determines The input voltage Vin drops to be less than the gate voltage undervoltage protection point Vuvlo2 of the drain undervoltage protection point Vuvlo1, then the gate voltage conversion module stops converting the input voltage Vin into a power supply for the gate The gate voltage Vg causes the gate to be powered down.

In the embodiment of the invention, the drain level is powered off in advance, so that the power amplifier timing sequence can be met.

The units and modules involved in the embodiments of FIG. 3, FIG. 4 and FIG. 5 can all adopt existing circuits or chips. For example, the enabling unit can adopt a voltage dividing circuit, a leakage voltage conversion module and a drain-voltage undervoltage shutdown unit. A voltage converter with its own undervoltage lockout function can be used, and will not be described here.

The power amplifiers involved in the embodiments of FIG. 3, FIG. 4, and FIG. 5 may be GaN power amplifiers, LDMOS power amplifiers, GaAs power amplifiers, and the like.

The input voltage Vin involved in the embodiments of FIG. 3, FIG. 4 and FIG. 5 may be an input voltage of a system using a GaN power amplifier, an LDMOS power amplifier, a GaAs power amplifier or the like.

FIG. 6 is a working block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention. As shown in FIG. 6, the following modules are included:

Voltage conversion unit 1 (corresponding to the leakage voltage conversion module of FIG. 5): converting Vin (input voltage) into Vd;

UVLO (Under Voltage Lock Out) 1 (corresponding to the drain-voltage undervoltage shutdown unit of FIG. 5): a necessary condition for the operation of the voltage conversion unit 1;

The enabling unit (corresponding to the enabling unit of FIG. 5): a necessary condition for the voltage converting unit 1 to operate;

Voltage conversion unit 2 (corresponding to the gate voltage conversion module of FIG. 5): converting Vin into Vg;

UVLO2 (corresponding to the gate voltage undervoltage shutdown module of Fig. 5): a necessary condition for the operation of the voltage conversion unit 2.

Based on FIG. 6, the step of controlling the power-on and power-off sequence of the power amplifier includes:

The first step: when power is applied, when Vin rises to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 operates, and Vg starts to be established;

Step 2: When Vg falls to V1, the enable circuit operates, the voltage conversion unit 1 operates, and Vd starts to be established to meet the power-on sequence;

The third step: when the power is off, when Vin drops to Vuvlo1, the UVLO1 circuit operates, the voltage conversion unit 1 stops working, and Vd starts to lose power;

Step 4: When Vin drops to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 stops working, and Vg starts to lose power;

Step 5: When Vg rises to V2, the Vd value is less than V3, which satisfies the power-down sequence.

The embodiment of the present invention provides a power amplifier timing control strategy implemented by a dual independent power supply, and provides a control power amplifier, which is provided in the prior art, which has a complicated control and low reliability of the timing control circuit of the power amplifier. The strategy of power-on and power-down timing, the gate voltage and the leakage voltage of the power amplifier are respectively converted by independent power sources, wherein the gate voltage is used to control the enable of the leakage voltage power supply to meet the power-on timing; when the power is off, the gate voltage undervoltage protection can be achieved. The point is lower than the leakage voltage undervoltage protection point to allow the leakage voltage to be prematurely de-energized to meet the power-down timing requirements.

The embodiments of the present invention are applicable to all power amplifiers that require gate voltage timing, and are not limited to GaN, but also include all power amplifiers such as LDMOS, GaAs, and other applications of all GaN and GaAs tubes.

Taking the GaN power amplifier as an example, the implementation process of controlling the power-on and power-down timings of the Vd and Vg of the GaN power amplifier will be further described in detail with reference to FIG. 6 and FIG. 7 , as follows:

Referring to FIG. 6, the hardware system includes: a voltage conversion unit 1, a UVLO1, an enable unit, a voltage conversion unit 2, and a UVLO2. In addition, Vin is the system input voltage; Vd is the output voltage of the voltage conversion unit 1, and supplies power to the GaN power amplifier drain; Vg is the output voltage of the voltage conversion unit 2, and supplies power to the GaN power amplifier gate.

Wherein, the UVLO1 and the enabling unit are necessary conditions for the voltage converting unit 1 to operate, and when both are provided, the voltage converting unit 1 can output Vd; and if any of the conditions is not provided, the voltage converting unit 1 does not operate.

Among them, UVLO2 is a necessary condition for the voltage conversion unit 2 to operate.

Wherein, the enabling unit is controlled by Vg, and when Vg is lower than the voltage V1, the enabling unit enables the voltage converting unit 1 to operate; when Vg is higher than the voltage V1, the enabling unit turns off the voltage converting unit 1 to operate.

Referring to Figure 7, the steps of the flow part are as follows:

Step 1: Vin is powered on. When Vin rises to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 operates, and outputs Vg.

Step 2: Vin continues to rise to Vuvlo1. At this time, the UVLO1 circuit operates. If Vg is already lower than V1 at this time, the enable circuit has also been activated. When both are available, the voltage conversion unit 1 operates and outputs Vd; If Vg is still greater than V1, it is necessary to wait for Vg to be lower than V1 before outputting Vd to meet the power-on sequence;

Step 3: When Vin is powered down, when Vin<Vuvlo1, the UVLO1 circuit operates, the voltage conversion unit 1 is turned off, and Vd starts to be powered down;

Step 4: After the voltage conversion unit 1 is turned off, since the output Vg load of the power conversion unit 2 is small, the Vin falls very slowly at this time;

Step 5: When Vin slowly drops to Vin<Vuvlo2, the voltage conversion unit 2 is turned off, and Vg starts to climb;

Step 6: When Vg climbs to V2, only Vd < V3 is required to satisfy the power-down sequence.

Due to the convenient adjustment of Vuvlo1 and Vuvlo2 points, and the use of Vin in the slow power-down state after Vd is powered off, this embodiment can easily realize the GaN power supply timing and ensure the safety of the GaN power amplifier tube during power-on and power-off.

The embodiments of the present invention are applicable to the strict power-on and power-down timing control of a GaN HEMT (High Electron Mobility Transistor, GaN-based material) power amplifier, especially the application of a GaN power amplifier in the communication field.

Although the invention has been described in detail above, the invention is not limited thereto, and various modifications may be made by those skilled in the art in accordance with the principles of the invention. Therefore, modifications made in accordance with the principles of the invention are to be understood as falling within the scope of the invention.

Claims

A power amplifier power supply control method, comprising:

When the power amplifier is powered on, the input voltage is converted into a gate voltage for supplying power to the power amplifier gate;

Determining whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level;

If it is determined that the gate voltage satisfies a voltage requirement for triggering power-on of the power amplifier drain level, the input voltage is converted into a drain voltage for supplying the drain level.
The method of claim 1 wherein said converting said input voltage to a gate voltage for powering a power amplifier gate comprises:

If the gate voltage undervoltage shutdown module determines that the input voltage rises to the gate voltage undervoltage protection point, the gate voltage conversion module converts the input voltage into the gate voltage and outputs to the gate of the power amplifier.
The method according to claim 2, wherein the determining whether the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered comprises:

If the enabling unit determines that the gate voltage drops to a trigger point for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage rises to a drain undervoltage protection point, determining that the trigger is satisfied Power amplifier leakage level power requirements.
The method of claim 3, wherein the method further comprises:

When the power amplifier is powered off, according to the gate voltage undervoltage protection point and the drain undervoltage protection point, the start time of controlling the gate power-off is delayed from the start time of the drain power-down.
The method according to claim 4, wherein said controlling a start time of said gate power-down lags said drain according to said gate voltage undervoltage protection point and said drain undervoltage protection point The start time of the level power down includes:

If the drain-voltage undervoltage shutdown unit determines that the input voltage drops to the drain-undervoltage protection point, the drain-voltage conversion module stops converting the input voltage into the power for powering the drain Leaking the voltage to cause the drain to be powered down;

If the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops converting the input voltage to be used to power the gate The gate voltage causes the gate to be powered down;

Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
A method according to any of claims 1-5, wherein the power amplifier is a GaN power amplifier or an LDMOS power amplifier or a GaAs power amplifier.
A power amplifier power supply control device, comprising:

a gate voltage conversion module, configured to convert an input voltage into a gate voltage for powering a power amplifier gate when the power amplifier is powered on;

a leakage voltage triggering module, configured to determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level;

And a leakage voltage conversion module, configured to convert the input voltage into a drain voltage for supplying the drain level if it is determined that the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered.
The device according to claim 7, wherein the device further comprises:

a gate voltage undervoltage shutdown module for determining whether the input voltage rises to a gate voltage undervoltage protection point;

Wherein, if the gate voltage undervoltage shutdown module determines that the input voltage rises to the gate voltage undervoltage protection point, the gate voltage conversion module converts the input voltage into the gate voltage, and outputs To the gate of the power amplifier.
The device according to claim 8, wherein the leakage pressure triggering module comprises:

An enabling unit, configured to determine whether the gate voltage drops to a trigger point for supplying the drain level;

a drain-voltage undervoltage shutdown unit for determining whether the input voltage rises to a leakage undervoltage protection point;

Wherein, if the enabling unit determines that the gate voltage drops to a trigger point for supplying power to the drain stage, and the drain undervoltage shutdown unit determines that the input voltage rises to the drain undervoltage protection And the drain voltage conversion module converts the input voltage into the drain voltage.
The device of claim 9 wherein:

The drain-voltage undervoltage shutdown unit is further configured to determine whether the input voltage drops to the leakage undervoltage protection point;

The gate undervoltage shutdown module is further configured to determine whether the input voltage drops to less than the gate voltage undervoltage protection point of the drain undervoltage protection point;

Wherein, if the drain-voltage undervoltage shutdown unit determines that the input voltage drops to the drain-voltage undervoltage protection point, the drain-voltage conversion module stops converting the input voltage into a power supply for the drain The drain voltage is powered down; if the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops Converting the input voltage to the gate voltage for powering the gate to power down the gate;

Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.