CN112803784B - Self-excitation driving and power conversion circuit based on GaN HEMT device - Google Patents

Self-excitation driving and power conversion circuit based on GaN HEMT device Download PDF

Info

Publication number
CN112803784B
CN112803784B CN202110209549.1A CN202110209549A CN112803784B CN 112803784 B CN112803784 B CN 112803784B CN 202110209549 A CN202110209549 A CN 202110209549A CN 112803784 B CN112803784 B CN 112803784B
Authority
CN
China
Prior art keywords
resistor
circuit
driving
self
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110209549.1A
Other languages
Chinese (zh)
Other versions
CN112803784A (en
Inventor
王玉雯
高潮
庄紫怡
吉怡悦
周祥兵
陈敦军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YANGZHOU JIANGXIN ELECTRONICS CO LTD
Original Assignee
YANGZHOU JIANGXIN ELECTRONICS CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YANGZHOU JIANGXIN ELECTRONICS CO LTD filed Critical YANGZHOU JIANGXIN ELECTRONICS CO LTD
Priority to CN202110209549.1A priority Critical patent/CN112803784B/en
Publication of CN112803784A publication Critical patent/CN112803784A/en
Application granted granted Critical
Publication of CN112803784B publication Critical patent/CN112803784B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/338—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in a self-oscillating arrangement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention discloses a self-excitation driving and power conversion circuit based on a GaN HEMT device. The circuit adopts a novel GaN-based HEMT device, and improves the working frequency of the circuit to MHz. The device adopts a silicon substrate and a Q1 and Q2 double-transistor on-chip design, and two transistors share one wafer, so that the volume is reduced, the cost is reduced, and the reliability control is improved. The device also adopts an integrated reverse parallel diode structure, and the reverse conduction characteristic of the device is improved. The circuit adopts a self-excitation driving cavity in a positive feedback mode to automatically provide a driving signal for Q1 through a third auxiliary winding Na in a main transformer of a power circuit, a control chip is not needed, and the reliable driving of the Q1 is ensured through a special driving buffer circuit aiming at a GaN HEMT device. The circuit further adopts an integrated high-frequency current cycle-by-cycle detection scheme, and the high-frequency current cycle-by-cycle detection scheme and the self-excitation driving cavity share one coil, so that a current detection resistor is omitted, and lossless current detection is realized.

Description

Self-excitation driving and power conversion circuit based on GaN HEMT device
Technical Field
The invention relates to a self-excitation driving and power conversion circuit based on a GaN HEMT device.
Background
With the rapid development of science and technology and the response to the national low energy consumption strategy, the market of the switching power supply shows a situation of continuously increasing year by year, and the requirements of the switching power supply field on efficiency, size and the like are higher and higher. Because the flyback converter has the advantages of simple structure, small number of components, high reliability and low cost, and the flyback converter adopts inductance energy storage, the primary current is large, the leakage inductance of the transformer is large, the maximum duty ratio of the flyback converter is usually limited within 0.4, and the maximum power of the flyback circuit is greatly limited, so that the flyback converter is developed to be the dominant position in the market in a small-power occasion of less than 75W. One particular circuit form in a flyback converter is a self-excited flyback converter, also known as an RCC converter. The RCC converter works through self-excited oscillation, the frequency is not fixed, the influence of the parameters of the device and the stray parameters of the circuit on the RCC converter is large, and the reliability of the circuit is greatly challenged when the switching device works in a quasi-saturation state. With the high-speed development of integrated circuits, the RCC converter is slowly marginalized, and generally, the RCC converter is only used for low-cost applications of 25W or even below 15W, which is difficult to break through.
On the other hand, the development of the devices has been restraining the evolution of the switching power supply circuit, and with the emergence of the GaN HEMT device (gallium nitride-based high electron mobility transistor), the switching power supply circuit has a new development breakthrough. Due to the high band gap and the large conduction band difference of the GaN/AlGaN material, the GaN HEMT device can bear higher working high voltage than a conventional silicon-based MOS device, has small conduction loss, high working frequency, good temperature resistance stability and the like, and is particularly suitable for improving the working reliability of the RCC converter, expanding the power level of the RCC converter and making the RCC circuit have a new prospect. However, the threshold voltage of the GaN HEMT device is lower than that of the conventional silicon-based MOS device, and is only about 1.0-1.5V, the gate voltage tolerance is also only about 7V, and in addition, the high-frequency operating characteristics of the device greatly increase dv/dt and di/dt of the device operation, so that the driving of the device needs to be redesigned.
Fig. 1 shows a conventional technique one: a circuit diagram of a chip + silicon-based MOSFET + Flyback circuit. In a Flyback (Flyback) application circuit, a mode of controlling by using a chip is dominant at present. In the circuit, a field effect transistor (MOSFET) Q1 is used as a main switching tube, and the working duty ratio of Q1 is controlled by an integrated control chip. The control chip mainly collects a cycle-by-cycle Current Signal (CS) passing through the Q1 and a voltage feedback signal (FB) generated by the secondary side output, the VCC power supply is provided through the auxiliary winding, and a driving signal (DRV) is output to control the duty ratio of the Q1. There are many control modes of the chip, such as a continuous working mode (CCM), a discontinuous working mode (DCM), a quasi-resonant working mode (QR), and a hybrid working mode. However, the significant problem is the high cost of the integrated chip.
Fig. 2 shows a second conventional technique: si-based bipolar transistor + RCC circuit diagram. In Flyback (Flyback) application circuits with a small current output of 10W or less, RCC (self-excited Flyback converter) circuits are often used. In the circuit, a Bipolar Junction Transistor (BJT) Q1 is used as a main switching tube, the driving and working duty ratio of the Q1 are controlled by a peripheral circuit, a control chip is not needed, and the cost is greatly saved. Q1 is first passed through R by the bus voltagestaWhen the current-limiting drive is started, after the Q1 is started, the current flowing through the Q1 is caused by the primary inductance N of the transformerpWhile the auxiliary winding Na provides a continuous drive to Q1 through the current limiting resistor R1 and the dc blocking capacitor C1. When the current flowing through Q1 is increased to make RsThe voltage on triggers Q2 to turn on, Q2 pulls the base drive signal of Q1 low, so that Q1 stops turning on and turns to an off state. At the same time, the voltage feedback signal (FB) generated by the secondary output also superimposes the base level of Q2, thereby affecting the timing of Q1 turn-off. After the Q1 is switched off, the level of the auxiliary winding Na is also reversed, and the charge on the base of the Q1 is quickly pumped away by the C1 and the R1, so that the Q1 is switched off in an accelerated way. When the output current drops to 0, no current flows through the D2, so that the Ns coil is automatically decoupled from the output, the primary inductor Np resonates with the output junction capacitance of the Q1, and when the level of Np is inverted, that is, the level of Na is inverted again, the Q1 is triggered to be automatically turned on again through the R1 and the C1. The circuit works in a quasi-resonance mode, realizes zero-current soft switching, has higher working efficiency, and has the defect that Q1 power capability adopting BJT is lower, so that the circuit is not suitable for occasions with higher power.
Fig. 3 shows a third conventional technique: si-based MOSFET + RCC circuit diagram. The scheme is very similar to the second conventional technology, only a BJT transistor is replaced by a MOS transistor, and the power level of the circuit is expanded by utilizing the characteristics of large power, high frequency and the like of the MOS transistor, so that the power level of the circuit is applied to the application occasions of more than 10W and even as high as 50W. In addition, compared with BJT (bipolar junction transistor), the MOS transistor has no problem of secondary breakdown, and the reliability of the MOS transistor is greatly improved. The disadvantage is that the operating frequency of the traditional Si-based MOS transistor is generally only between 30kHz and 100kHz after factors such as loss, cost, EMI and the like are balanced due to large junction capacitance, which is not beneficial to improving the power density of the product.
Disclosure of Invention
The invention aims to provide a self-excitation driving and power conversion circuit based on a GaN HEMT device.
The purpose of the invention is realized by the following technical scheme:
a self-excitation driving and power conversion circuit based on a GaN HEMT device comprises: the circuit comprises a starting circuit, a power conversion circuit, a protection circuit, a voltage stabilizing diode Dz1, an isolation feedback network, a self-excitation driving and cycle-by-cycle current detection circuit, a driving buffer and an output rectification circuit;
the starting circuit consists of a resistor Rsta, one section of the resistor Rsta is connected with a power input positive line, and the other end of the resistor Rsta is connected with the cathode of the voltage-stabilizing diode Dz 1;
the power conversion circuit consists of a winding Np of a transformer, a main power tube Q1 and a feedback function tube Q2, wherein Q1 is an enhanced GaN HEMT device, the grid electrode of the enhanced GaN HEMT device is connected with the cathode of a voltage stabilizing diode Dz1, the source electrode of the enhanced GaN HEMT device is connected with the anode of the voltage stabilizing diode Dz1 and is grounded, the dotted terminal of the winding Np is connected with an input positive line, the dotted terminal of the winding Np is connected with the drain electrode of Q1, Q2 is an enhanced GaN HEMT device, the drain electrode of the enhanced GaN HEMT device is connected with the grid electrode of Q1, the grid electrode of the enhanced GaN HEMT device is connected with a resistor R4, and the source electrode of the enhanced GaN HEMT device is grounded;
the protection circuit consists of a voltage stabilizing diode Dz 1;
one end of the isolation feedback network is connected with the output anode, the other end of the isolation feedback network is connected with a resistor R6, and a resistor R6 is connected with a Q2 grid;
the output rectifying circuit consists of a winding Ns of the transformer, a diode D2 and a polar capacitor C4, wherein the synonym end of the winding Ns is connected with the anode of the diode D2, the synonym end of the winding Ns is connected with the output cathode, the cathode of the diode D2 is connected with the output anode, the anode of the polar capacitor C4 is connected with the cathode of the diode D2, and the cathode of the polar capacitor C4 is connected with the output cathode;
the self-excitation driving and cycle-by-cycle current detection circuit comprises a self-excitation driving circuit and a cycle-by-cycle current detection circuit, wherein the self-excitation driving circuit consists of an auxiliary winding Na, a resistor R1 and a blocking capacitor C1, the same-name end of the winding Na is connected with the resistor R1 and the blocking capacitor C1 in series, and the other end of the blocking capacitor C1 is connected with the grid of the Q1 through a driving buffer;
the cycle-by-cycle current detection circuit and the self-excitation driving circuit share an auxiliary winding Na, and further comprise a voltage stabilizing diode Dz2, diodes D3, D4, polar capacitors C2, C3, resistors R2, R3, R4 and R5, the same name of the winding Na is connected with the cathode of a diode D3, the anode of the diode D3 is connected with the cathode of the polar capacitor C2, the anode of the polar capacitor C2 is connected with the anode of a diode D4, the cathode of the diode D4 is connected with the anode of the polar capacitor C3, the cathode of the polar capacitor C3 is connected with the cathode of the polar capacitor C2 to form a second stage VCC voltage forming a loop, and the cathode of the polar capacitor C3 is connected with an input loop;
the resistor R2 is connected in parallel with the polar capacitor C2, the anode of the polar capacitor C2 is connected in series with the blocking capacitor C5 and the resistor R5, the other end of the resistor R5 is connected with the grid of the Q2, the zener diode Dz2 is connected in series with the resistor R3, the resistor R4 is connected in parallel with the zener diode Dz2 and the resistor R3, one end of the resistor R4 and one end of the zener diode Dz2 are connected between the dotted terminal of the winding Na and the resistor R1, and the other ends of the resistor R4 and the resistor R3 are connected between the grids of the resistors R5 and Q2.
Preferably, Q1 and Q2 share a common wafer.
Preferably, the driving buffer includes resistors R101, R102, R103, R104, R105, not gate U101A, U101B, blocking capacitors C101, C102, zener diodes Dz101, Dz102, and C1, and transmits the driving signal to the not gate U101A after dividing the voltage by R101 and R102, after the level is inverted, the driving signal is transmitted to the next-stage not gate U101B through the voltage stabilizing and filtering networks Dz101, R103, and C101, then through Dz102, R104, and C102, and after the level is inverted again, the driving signal is transmitted to the gate of Q1 through the resistor R105.
Preferably, the driving buffer includes resistors R101, R102, R103, R104, R106, not gate U101A, U101C, U101D, blocking capacitors C101, C102, zener diodes Dz101, Dz102, and C1 divides the voltage of the driving signal by R101 and R102 and transmits the divided voltage to the not gate U101A, after the level is inverted, the divided voltage is transmitted to the not gate U101A through the voltage stabilizing and filtering networks Dz101, R103, and C101, and then transmitted to the next-stage not gate U101C, U101D through Dz102, R104, and C102, and after the level is inverted twice, the divided voltage is transmitted to the gate of Q1 through the resistor R106.
Preferably, the Q1 and the Q2 adopt an integrated antiparallel diode structure.
Preferably, the capacitance value of the polar capacitor C2 is 1/10-1/5 of the capacitance value of the polar capacitor C3.
The circuit main part of the invention is completely the same as the traditional self-oscillation quasi-resonant power conversion circuit, but innovations are made in a nondestructive current detection mode, a main power tube driving mode and a slope compensation mode, so that the working frequency of the traditional self-oscillation quasi-resonant power conversion circuit is improved, the application power level of the circuit is expanded, a brand new self-oscillation driving scheme is provided for a GaN HEMT device, an additional driving chip is not needed, and the system application cost of the GaN HEMT device is reduced.
The invention adopts the on-chip design of the Q1 and Q2 double transistors, and the two transistors share one wafer, thereby reducing the volume, reducing the cost and improving the reliability control. The Q1 and Q2 devices also adopt an integrated reverse parallel diode structure, so that the reverse conduction characteristic of the devices is improved. The circuit adopts a self-excitation driving cavity in a positive feedback mode to automatically provide a driving signal for Q1 through a third auxiliary winding Na in a main transformer of a power circuit, a control chip is not needed, and the reliable driving of the Q1 is ensured through a special driving buffer circuit aiming at a GaN HEMT device. The circuit further adopts an integrated high-frequency current cycle-by-cycle detection scheme, and shares one coil Na with the self-excitation driving cavity, so that a current detection resistor is omitted, and lossless current detection is realized.
The GaN HEMT device adopted by the invention has excellent frequency characteristics, so that the working frequency of the circuit can be increased to MHz.
The self-excitation driving of the power switch tube is realized through the third auxiliary coil Na, a third-party driving chip is not needed, meanwhile, the closed-loop control function of the circuit is completely realized through discrete components, the third-party control chip is not needed, and the circuit cost is reduced by at least 20%.
The function of high-frequency cycle-by-cycle current detection is multiplexed by the third auxiliary coil, so that the lossless detection of current is realized, the circuit efficiency is improved by at least 0.2%, and more importantly, the loop area in the PCB layout is reduced, so that the high-frequency noise is reduced.
Introducing slope compensation by gate drive expands the duty cycle from 0.4 to 0.55.
The drive buffer generates enough Q1 drive signal through two buffered amplifications.
Drawings
Fig. 1 shows a conventional technique one: a circuit diagram of a chip + silicon-based MOSFET + Flyback circuit.
Fig. 2 shows a second conventional technique: si-based bipolar transistor + RCC circuit diagram.
Fig. 3 shows a third conventional technique: si-based MOSFET + RCC circuit diagram.
Fig. 4 is a circuit diagram of the present invention.
Fig. 5 is a circuit diagram of a driving buffer of the present invention.
Detailed Description
Example 1
This self-excitation drive and power conversion circuit based on GaN HEMT device includes: the circuit comprises a starting circuit, a power conversion circuit, a protection circuit, a voltage stabilizing diode Dz1, an isolation feedback network, a self-excitation driving and cycle-by-cycle current detection circuit, a driving buffer and an output rectification circuit;
the starting circuit consists of a resistor Rsta, one section of the resistor is connected with a power input positive line, the other end of the resistor is connected with the cathode of a voltage stabilizing diode Dz1, and the Rsta is a high-voltage starting resistor of Q1 and is generally set to be 680k omega-3M omega;
the power conversion circuit consists of a winding Np of a transformer, a main power tube Q1 and a feedback function tube Q2, wherein Q1 is an enhanced GaN HEMT device, the grid electrode of the enhanced GaN HEMT device is connected with the cathode of a voltage stabilizing diode Dz1, the source electrode of the enhanced GaN HEMT device is connected with the anode of the voltage stabilizing diode Dz1 and is grounded, the dotted terminal of the winding Np is connected with an input positive line, the dotted terminal of the winding Np is connected with the drain electrode of Q1, Q2 is an enhanced GaN HEMT device, the drain electrode of the enhanced GaN HEMT device is connected with the grid electrode of Q1, the grid electrode of the enhanced GaN HEMT device is connected with a resistor R4, and the source electrode of the enhanced GaN HEMT device is grounded;
the protection circuit consists of a voltage-stabilizing diode Dz1, Dz1 is a gate protection voltage-stabilizing tube of Q1, and the voltage-stabilizing tube is generally 4-7V;
one end of the isolation feedback network is connected with the output anode, the other end of the isolation feedback network is connected with a resistor R6, and a resistor R6 is connected with a Q2 grid; the isolation feedback network is the existing mature technology (for example, Chenyi, south facing children, Hanjian Jun. improvement and design [ J ] electronic technology application of a flyback switching power supply feedback loop adopting UC3844, 2008,34(006):74-77. DOI: 10.3969/j.issn.0258-7998.2008.06.041); the secondary side output voltage is sent to a grid electrode of Q2 through R8 by an isolation feedback network and generally adopting a feedback mode of a three-terminal regulator plus an optocoupler, namely the grid electrode of Q2 contains output voltage feedback information, peak current information and slope compensation information of Q1, so that three functions of current inner loop, voltage outer loop and sub-harmonic elimination can be realized, and the effects of output voltage stabilization, overpower protection and maximum duty ratio expansion are simultaneously met;
the output rectifying circuit consists of a winding Ns of the transformer, a diode D2 and a polar capacitor C4, wherein the synonym end of the winding Ns is connected with the anode of the diode D2, the synonym end of the winding Ns is connected with the output cathode, the cathode of the diode D2 is connected with the output anode, the anode of the polar capacitor C4 is connected with the cathode of the diode D2, and the cathode of the polar capacitor C4 is connected with the output cathode;
the self-excitation driving and cycle-by-cycle current detection circuit comprises a self-excitation driving circuit and a cycle-by-cycle current detection circuit, wherein the self-excitation driving circuit consists of an auxiliary winding Na, a resistor R1 and a blocking capacitor C1, the same-name end of the winding Na is connected with the resistor R1 and the blocking capacitor C1 in series, and the other end of the blocking capacitor C1 is connected with the grid of the Q1 through a driving buffer;
the cycle-by-cycle current detection circuit and the self-excitation driving circuit share an auxiliary winding Na, and further comprise a voltage stabilizing diode Dz2, diodes D3, D4, polar capacitors C2, C3, resistors R2, R3, R4 and R5, the same name of the winding Na is connected with the cathode of a diode D3, the anode of the diode D3 is connected with the cathode of the polar capacitor C2, the anode of the polar capacitor C2 is connected with the anode of a diode D4, the cathode of the diode D4 is connected with the anode of the polar capacitor C3, the cathode of the polar capacitor C3 is connected with the cathode of the polar capacitor C2 to form a second stage VCC voltage forming a loop, and the cathode of the polar capacitor C3 is connected with an input loop;
the resistor R2 is connected in parallel with the polar capacitor C2, the anode of the polar capacitor C2 is connected in series with the blocking capacitor C5 and the resistor R5, the other end of the resistor R5 is connected with the grid of the Q2, the zener diode Dz2 is connected in series with the resistor R3, the resistor R4 is connected in parallel with the zener diode Dz2 and the resistor R3, one end of the resistor R4 and one end of the zener diode Dz2 are connected between the dotted terminal of the winding Na and the resistor R1, and the other ends of the resistor R4 and the resistor R3 are connected between the grids of the resistors R5 and Q2.
In the cycle-by-cycle current detection circuit, Na, C2 and D3 form a first stage of VCC voltage to form a loop, and C2, D4 and C3 form a second stage of VCC voltage to form a loop. The capacitance value of C2 is 3-44uF, the capacitance value of C3 is 22-220uF, the capacitance value of C2 is far smaller than that of C3, the capacitance value of C2 is controlled to be 1/10-1/5 of the capacitance value of C3, and the voltage on C2 is adjusted through charging and discharging of R2, so that the voltage fluctuation is large. The voltage fluctuation at C2 reflects the current level of the winding Na, i.e. the current level of the main winding Np and the transistor Q1. Therefore, the voltage on C2 is fed to the grid of Q2 through R5 and C6, so that the effect of feeding back the peak current flowing through Q1 can be realized, and the effect of C6 is to isolate the direct current component and feed back only the alternating part of the voltage on C2 to the grid of Q2.
The driving buffer comprises resistors R101, R102, R103, R104, R105, a NOT gate U101A, U101B, blocking capacitors C101 and C102, a voltage stabilizing diode Dz101 and a voltage stabilizing diode Dz102, wherein a driving signal is divided by the resistors R101 and R102 and then transmitted to the NOT gate U101A through the C1, after the level is inverted, the driving signal firstly passes through a voltage stabilizing and filtering network DZ101, R103 and C101, then passes through the DZ102, R104 and C102 and is transmitted to a next-stage NOT gate U101B, the level is inverted again, and then is transmitted to a gate of the Q1 through the resistor R105. The power supplies of the two-stage NOT gate U101A and U101B both obtain the stable VCC voltage generated by the third auxiliary coil Na, and generate enough Q1 driving signals through two times of buffering and amplification. Where DZ102 serves to prevent the output level of U101A from malfunctioning when it is not low enough, and R104 and C102 serve to further filter. The input and output logic of the driving buffer is input and output same high and same low level.
Dz2, R3 and R4 transfer the gate drive signal of Q1 to the gate of Q2, thereby achieving a slope compensation effect, extending the duty cycle range of the converter and avoiding sub-harmonic oscillation.
Example 2
The structure of this embodiment is substantially the same as embodiment 1, except that: the driving buffer comprises resistors R101, R102, R103, R104, R106, NOT gates U101A, U101C, U101D, blocking capacitors C101, C102, voltage stabilizing diodes Dz101 and Dz102, wherein the driving signal is transmitted to the NOT gate U101A after being divided by the resistors R101 and R102 through the C1, after the level is inverted, the driving signal is transmitted to the NOT gates U101A through the voltage stabilizing and filtering networks DZ101, R103 and C101, then transmitted to the NOT gates U101C and U101D at the next stage through the DZ102, R104 and C102, and transmitted to the grid of the Q1 through the resistor R106 after the level is inverted twice. The driving buffer generates inverted input/output logic, such as outputting a low level when a high level is inputted.
The positive and negative outputs can also be integrated into the same drive buffer, and the user can select the connection according to the requirement.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (6)

1. A self-excitation driving and power conversion circuit based on a GaN HEMT device comprises: the circuit comprises a starting circuit, a power conversion circuit, a protection circuit, a voltage stabilizing diode Dz1, an isolation feedback network, a self-excitation driving and cycle-by-cycle current detection circuit, a driving buffer and an output rectification circuit;
the starting circuit consists of a resistor Rsta, one end of the resistor Rsta is connected with a power input positive line, and the other end of the resistor Rsta is connected with the cathode of the voltage-stabilizing diode Dz 1;
the power conversion circuit consists of a winding Np of a transformer, a main power tube Q1 and a feedback function tube Q2, wherein Q1 is an enhanced GaN HEMT device, the grid electrode of the enhanced GaN HEMT device is connected with the cathode of a voltage stabilizing diode Dz1, the source electrode of the enhanced GaN HEMT device is connected with the anode of the voltage stabilizing diode Dz1 and is grounded, the dotted terminal of the winding Np is connected with an input positive line, the dotted terminal of the winding Np is connected with the drain electrode of Q1, Q2 is an enhanced GaN HEMT device, the drain electrode of the enhanced GaN HEMT device is connected with the grid electrode of Q1, the grid electrode of the enhanced GaN HEMT device is connected with a resistor R4, and the source electrode of the enhanced GaN HEMT device is grounded;
the protection circuit consists of a voltage stabilizing diode Dz 1;
one end of the isolation feedback network is connected with the output anode, the other end of the isolation feedback network is connected with a resistor R6, and a resistor R6 is connected with a Q2 grid;
the output rectifying circuit consists of a winding Ns of the transformer, a diode D2 and a polar capacitor C4, wherein the synonym end of the winding Ns is connected with the anode of the diode D2, the synonym end of the winding Ns is connected with the output cathode, the cathode of the diode D2 is connected with the output anode, the anode of the polar capacitor C4 is connected with the cathode of the diode D2, and the cathode of the polar capacitor C4 is connected with the output cathode;
the self-excitation driving and cycle-by-cycle current detection circuit comprises a self-excitation driving circuit and a cycle-by-cycle current detection circuit, wherein the self-excitation driving circuit consists of an auxiliary winding Na, a resistor R1 and a blocking capacitor C1, the same-name end of the winding Na is connected with the resistor R1 and the blocking capacitor C1 in series, and the other end of the blocking capacitor C1 is connected with the grid of the Q1 through a driving buffer;
the cycle-by-cycle current detection circuit and the self-excitation driving circuit share an auxiliary winding Na, and further comprise a voltage stabilizing diode Dz2, diodes D3, D4, polar capacitors C2, C3, resistors R2, R3, R4 and R5, the same name of the winding Na is connected with the cathode of a diode D3, the anode of the diode D3 is connected with the cathode of the polar capacitor C2, the anode of the polar capacitor C2 is connected with the anode of a diode D4, the cathode of the diode D4 is connected with the anode of the polar capacitor C3, the cathode of the polar capacitor C3 is connected with the cathode of the polar capacitor C2 to form a second stage VCC voltage forming a loop, and the cathode of the polar capacitor C3 is connected with an input loop;
the resistor R2 is connected in parallel with the polar capacitor C2, the anode of the polar capacitor C2 is connected in series with the blocking capacitor C5 and the resistor R5, the other end of the resistor R5 is connected with the grid of the Q2, the zener diode Dz2 is connected in series with the resistor R3, the resistor R4 is connected in parallel with the zener diode Dz2 and the resistor R3, one end of the resistor R4 and one end of the zener diode Dz2 are connected between the dotted terminal of the winding Na and the resistor R1, and the other ends of the resistor R4 and the resistor R3 are connected between the grids of the resistors R5 and Q2.
2. A self-excited drive and power conversion circuit based on GaN HEMT device according to claim 1, wherein: q1 and Q2 share a wafer.
3. A self-excited driving and power conversion circuit based on GaN HEMT device according to claim 1 or 2, wherein: the driving buffer comprises resistors R101, R102, R103, R104, R105, a NOT gate U101A, U101B, blocking capacitors C101 and C102, voltage stabilizing diodes Dz101 and Dz102, wherein a driving signal is transmitted to the NOT gate U101A after being divided by the resistors R101 and R102 through the C1, after the level is inverted, the driving signal is transmitted to the NOT gate U101A through a voltage stabilizing and filtering network DZ101, R103 and C101, then transmitted to the next-stage NOT gate U101B through the DZ102, R104 and C102, and transmitted to the grid of the Q1 through the resistor R105 after the level is inverted again.
4. A self-excited driving and power conversion circuit based on GaN HEMT device according to claim 1 or 2, wherein: the driving buffer comprises resistors R101, R102, R103, R104, R106, NOT gates U101A, U101C, U101D, blocking capacitors C101, C102, voltage stabilizing diodes Dz101 and Dz102, wherein the driving signal is transmitted to the NOT gate U101A after being divided by the resistors R101 and R102 through the C1, after the level is inverted, the driving signal is transmitted to the NOT gates U101A through the voltage stabilizing and filtering networks DZ101, R103 and C101, then transmitted to the NOT gates U101C and U101D at the next stage through the DZ102, R104 and C102, and transmitted to the grid of the Q1 through the resistor R106 after the level is inverted twice.
5. A self-excited driving and power conversion circuit based on GaN HEMT device according to claim 1 or 2, wherein: the Q1 and the Q2 adopt an integrated type antiparallel diode structure.
6. A self-excited driving and power conversion circuit based on GaN HEMT device according to claim 1 or 2, wherein: the capacitance value of the polar capacitor C2 is 1/10-1/5 of the capacitance value of the polar capacitor C3.
CN202110209549.1A 2021-02-25 2021-02-25 Self-excitation driving and power conversion circuit based on GaN HEMT device Active CN112803784B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110209549.1A CN112803784B (en) 2021-02-25 2021-02-25 Self-excitation driving and power conversion circuit based on GaN HEMT device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110209549.1A CN112803784B (en) 2021-02-25 2021-02-25 Self-excitation driving and power conversion circuit based on GaN HEMT device

Publications (2)

Publication Number Publication Date
CN112803784A CN112803784A (en) 2021-05-14
CN112803784B true CN112803784B (en) 2022-04-08

Family

ID=75815723

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110209549.1A Active CN112803784B (en) 2021-02-25 2021-02-25 Self-excitation driving and power conversion circuit based on GaN HEMT device

Country Status (1)

Country Link
CN (1) CN112803784B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113708749B (en) * 2021-09-30 2023-08-29 深圳市华浩德电子有限公司 GaN compatible drive circuit
CN113872428B (en) * 2021-12-01 2022-02-25 珠海智融科技股份有限公司 Drive control circuit, method, equipment and medium of gallium nitride transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204145306U (en) * 2014-09-17 2015-02-04 中山市东升镇洪东电子五金加工厂 One is non-determines frequency power circuit structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RCC自激变换器的分析与设计;刘传洋 等;《通信电源技术》;20120125;第29卷(第1期);第29、30、32页 *

Also Published As

Publication number Publication date
CN112803784A (en) 2021-05-14

Similar Documents

Publication Publication Date Title
CN101572490B (en) Zero-voltage switch flyback-type DC-DC power supply conversion device
US9621044B2 (en) Zero voltage soft switching scheme for power converters
Wang A novel ZCS-PWM flyback converter with a simple ZCS-PWM commutation cell
US11750101B2 (en) Resonant converter
Tabisz et al. Zero-voltage-switched quasi-resonant buck and flyback converters—Experimental results at 10 MHz
US4857822A (en) Zero-voltage-switched multi-resonant converters including the buck and forward type
CN201430532Y (en) Zero voltage switch flyback type DC-DC power supply conversion device
US6191960B1 (en) Active clamp for isolated power converter and method of operating thereof
US9641082B2 (en) Systems and methods for zero voltage switching in power conversion systems
CN112803784B (en) Self-excitation driving and power conversion circuit based on GaN HEMT device
CA2719002A1 (en) Method and apparatus for extending zero-voltage switching range in a dc to dc converter
Giandalia et al. 650 V AllGaN™ power IC for power supply applications
Li et al. 18.4 An 11MHz Fully Integrated 5kV Isolated DC-DC Converter Without Cross-Isolation-Barrier Feedback
CN113472213A (en) Flyback converter
Xue et al. A 130 W 95%-efficiency 1 MHz non-isolated boost converter using PWM zero-voltage switching and enhancement-mode GaN FETs
CN113872428B (en) Drive control circuit, method, equipment and medium of gallium nitride transistor
Garcia et al. High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs
CN112803785B (en) Novel RCC circuit based on MOS device
CN112803786B (en) RCC circuit using hybrid semiconductor technology
US5959856A (en) DC-to-DC power converter
Jaunay et al. Dc-to-dc design guide
US10250249B1 (en) Recuperative gate drive circuit and method
WO2019200812A1 (en) Soft switching circuit
US20240162826A1 (en) Circuits and methods for operation of asymmetric half-bridge flyback converter with zvs windings
JP2002305876A (en) Switching power supply

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant