CN206164492U - GaN power amplifier pulse modulation circuit - Google Patents
GaN power amplifier pulse modulation circuit Download PDFInfo
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- CN206164492U CN206164492U CN201621242414.6U CN201621242414U CN206164492U CN 206164492 U CN206164492 U CN 206164492U CN 201621242414 U CN201621242414 U CN 201621242414U CN 206164492 U CN206164492 U CN 206164492U
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Abstract
The utility model discloses a gaN power amplifier pulse modulation circuit, including power -on sequence control circuit, grid voltage temperature compensation circuit and drain electrode pulse modulation circuit, wherein, power -on sequence control circuit respectively with grid voltage temperature compensation circuit and drain electrode pulse modulation circuit connection, the output of grid voltage temperature compensation circuit and drain electrode pulse modulation circuit respectively with the grid of gaN power amplifier with leak the level and be connected, power -on sequence control circuit is used for producing burden voltage input extremely grid voltage temperature compensation circuit to and produce the enable signal input extremely drain electrode pulse modulation circuit, grid voltage temperature compensation circuit is used for according to the temperature production gaN power amplifier of negative voltage and the gaN power amplifier of the input required grid voltage of normally working, drain electrode pulse modulation circuit is used for producing drain electrode pulse modulation voltage according to the enable signal of input and TTL pulse signal. The utility model discloses a gaN power amplifier pulse modulation circuit, have the circuit simple, easily realize, the stable performance is reliable, low cost's beneficial effect.
Description
Technical field
The utility model belongs to microwave technical field, in particular it relates to a kind of GaN power amplifiers pulse modulated circuit.
Background technology
In prior art, GaN power amplifiers pulse modulated circuit generally using single-chip microcomputer or microprocessor combine on-off circuit come
The electrifying timing sequence of GaN power amplifiers is realized, this method circuit structure is complicated, and manufacturing cost is high.Additionally, the more commonly used at present
GaN power amplifier grid voltages temperature-compensation circuit is typically tied using PIN diodes, NTC thermistor or temperature sensor and microprocessor
The modes such as conjunction carry out temperature-compensating to the grid voltage of GaN power amplifiers.Grid voltage temperature benefit is carried out to GaN power amplifiers using PIN diodes
The method repaid, although circuit structure is simple, but temperature-compensating is limited in scope, and GaN power amplifiers in this way are difficult
Normal work under harsh use environment；Because the resistance value of NTC thermistor changes exponentially rule change with temperature, this is just
The method for carrying out GaN power amplifier grid voltage temperature-compensatings using NTC thermistor is caused to compensate the linearity poor；Using temperature sensor
Although the mode compensation effect combined with microprocessor is preferably, circuit structure is complicated, and can not realize real-Time Compensation.
Utility model content
For the disadvantages described above or Improvement requirement of prior art, the utility model proposes a kind of GaN power amplifiers impulse modulation
Circuit, has the advantages that circuit structure is simple, be easily achieved, temperature compensation range is wide, with low cost.
To achieve these goals, the technical scheme of employing is as follows for the utility model：
A kind of GaN power amplifiers pulse modulated circuit, including power-on time sequence control circuit, grid voltage temperature-compensation circuit and drain electrode arteries and veins
Modulated circuit, wherein,
The power-on time sequence control circuit respectively with grid voltage temperature-compensation circuit and drain electrode pulse modulated circuit input
Connection, the power-on time sequence control circuit is used to produce negative voltage and enables signal, to be separately input into the grid voltage temperature
Compensation circuit and the drain electrode pulse modulated circuit；
The output end grid respectively with GaN power amplifiers and leakage of the grid voltage temperature-compensation circuit and drain electrode pulse modulated circuit
Level connection, the grid voltage temperature-compensation circuit is used for normal according to the negative voltage of input and the temperature generation GaN power amplifiers of GaN power amplifiers
Grid voltage needed for work, the drain electrode pulse modulated circuit is used for enable signal and outside TTL pulse letter according to input
Number realize the drain electrode impulse modulation of GaN power amplifiers.
As it is of the present utility model further preferably, the power-on time sequence control circuit include negative supply chip and point
The negative voltage that the RC wave filters not being connected with the negative supply chip and not gate, wherein negative supply chip are produced is filtered by the RC
Export after ripple device into the grid voltage temperature-compensation circuit, the enable signal that the negative supply chip is produced is non-defeated behind the door by this
Go out into the drain electrode pulse modulated circuit.
As it is of the present utility model further preferably, the grid voltage temperature-compensation circuit includes grid voltage regulator circuit, temperature
Compensation circuit and adder, the output end of wherein the grid voltage regulator circuit and temperature-compensation circuit is connected with adder, described
The negative voltage of power-on time sequence control circuit output is input into the grid voltage regulator circuit to produce corresponding grid voltage, the temperature-compensating
Circuit is used for the offset voltage that output is produced because of temperature change, output and the temperature-compensation circuit of the grid voltage regulator circuit
Export the grid voltage of the voltage as GaN power amplifiers of the output after adder process.
Further preferably the drain electrode pulse modulated circuit includes and door and on-off circuit as of the present utility model, its
In, described to be connected with door with on-off circuit, the enable signal input that power-on time sequence control circuit is produced extremely is somebody's turn to do and door, while outside
TTL pulse signal also input to this and door, exported to the on-off circuit Jing after should process two signals with door, control
The on-off circuit is producing the drain electrode pulse modulation voltage of GaN power amplifiers.
In general, by the contemplated above technical scheme of the utility model compared with prior art, have with following
Beneficial effect：Circuit structure of the present utility model is simple, and it is produced needed for GaN power amplifier normal works by power-on time sequence control circuit
Electrifying timing sequence, with prevent GaN power amplifiers because mistake electrifying timing sequence burn, using grid voltage temperature-compensation circuit produce with temperature
The grid voltage for changing and changing, keeps stable to ensure the power output of GaN power amplifiers to vary with temperature, while using drain electrode
Pulse modulated circuit realizes the drain electrode impulse modulation of GaN power amplifiers.
Description of the drawings
Fig. 1 is according to the GaN power amplifier pulse modulated circuit theory diagrams of the utility model embodiment；
Fig. 2 is that the power-on time sequence control circuit in the GaN power amplifier pulse modulated circuits according to the utility model embodiment is former
Reason figure；
Fig. 3 is that the grid voltage temperature-compensation circuit in the GaN power amplifier pulse modulated circuits according to the utility model embodiment is former
Reason figure；
Fig. 4 is that the drain electrode pulse modulated circuit in the GaN power amplifier pulse modulated circuits according to the utility model embodiment is former
Reason figure；
Fig. 5 is the electrifying timing sequence schematic diagram according to the GaN power amplifier pulse modulated circuits of the utility model embodiment；
In all of the figs, same reference represents identical technical characteristic, specifically, 1- electrifying timing sequences control electricity
Road, 2- grid voltage temperature-compensation circuits, 3- drain electrode pulse modulated circuits.
Specific embodiment
In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to the utility model.It should be appreciated that specific embodiment described herein is only to explain this
Utility model, is not used to limit the utility model.
As shown in figure 1, the GaN power amplifiers pulse modulated circuit of the present embodiment includes power-on time sequence control circuit 1, grid voltage temperature
Compensation circuit 2, drain electrode pulse modulated circuit 3.Wherein, power-on time sequence control circuit 1 respectively with grid voltage temperature-compensation circuit 2 and
Drain electrode pulse modulated circuit 3 connects, and it is used to export corresponding negative pressure to grid voltage temperature-compensation circuit 2, and accordingly output is enabled
Signal is to the pulse modulated circuit 3 that drains, the electrifying timing sequence needed for produce GaN power amplifier normal works.Grid voltage temperature-compensation circuit 2
Output end is connected with the grid of GaN power amplifiers, for producing the grid voltage for varying with temperature and changing, to ensure GaN power amplifiers
Power output is varied with temperature and keeps stable.The drain electrode output end of pulse modulated circuit 3 is connected with the drain of GaN power amplifiers, is used for
The drain electrode impulse modulation of GaN power amplifiers is realized according to enable signal and the outside TTL pulse signal of input.
As shown in figures 2 and 5, power-on time sequence control circuit 1 is used to control the grid of GaN power amplifiers and drain electrode electrifying timing sequence, with
Prevent GaN power amplifiers from burning.Specifically, power-on time sequence control circuit 1 includes indicating the negative pressure of pin REG in place with negative pressure adjustment
Power supply chip E1, RC wave filter and not gate U1.Preferably, E1 can select the power supply core of Linear Technology companies
Piece LTC1261L-4, RC wave filter can be realized with 2 10uF electric capacity C4, C5 and a 10 Ω resistance.As shown in Fig. 2 power supply core
The pin 6 of piece E1 exports -4V voltages and provides operating voltage, power supply chip for grid voltage temperature-compensation circuit 2 after RC wave filters
The output signal of pin 7 of LTC1261L-4 after not gate U1, as drain electrode pulse modulated circuit 3 enable signal EN.Fig. 5 is
The electrifying timing sequence schematic diagram of the GaN power amplifier pulse modulated circuits of the present embodiment.
As shown in figure 3, grid voltage temperature-compensation circuit 2 is made up of grid voltage regulator circuit, temperature-compensation circuit and adder, use
Keep stable in realizing GaN power amplifier power outputs to vary with temperature.Wherein, grid voltage regulator circuit and power-on time sequence control circuit
1 connection, power-on time sequence control circuit 1 output negative pressure as grid voltage temperature-compensation circuit 2 operating voltage, temperature-compensation circuit
For exporting the offset voltage produced because of temperature change, the output of grid voltage regulator circuit is passed through with the output of temperature-compensation circuit
Grid voltage of the voltage exported after adder process as GaN power amplifiers.
As shown in figure 4, drain electrode pulse modulated circuit 3 includes and door U2 and on-off circuit that wherein on-off circuit is preferably by NPN
Triode Q1 and PMOS Q2 are constituted, and the drain electrode pulse modulated circuit 3 is used to realize the drain electrode impulse modulation of GaN power amplifiers.Specifically
Ground, be connected with on-off circuit with door U2, power-on time sequence control circuit 1 generation enable signal EN be input into door U2, while outward
Portion's TTL pulse signal also inputs to and door U2, the signal output Jing after with door U2 process to on-off circuit, controlling switch circuit with
Realize the drain electrode impulse modulation of GaN power amplifiers.
As it will be easily appreciated by one skilled in the art that preferred embodiment of the present utility model is the foregoing is only, not
To limit the utility model, all any modifications made within spirit of the present utility model and principle, equivalent and change
Enter, should be included within protection domain of the present utility model.
Claims (4)
1. a kind of GaN power amplifiers pulse modulated circuit, it is characterised in that including power-on time sequence control circuit, grid voltage temperature-compensating electricity
Road and drain electrode pulse modulated circuit, wherein,
The power-on time sequence control circuit is connected respectively with the input of grid voltage temperature-compensation circuit and drain electrode pulse modulated circuit,
The power-on time sequence control circuit is used to produce negative voltage and enables signal, to be separately input into the grid voltage temperature-compensating electricity
Road and the drain electrode pulse modulated circuit；
The output end of the grid voltage temperature-compensation circuit and drain electrode pulse modulated circuit connects respectively with the grid and drain of GaN power amplifiers
Connect, the grid voltage temperature-compensation circuit is used to produce GaN power amplifier normal works according to the negative voltage of input and the temperature of GaN power amplifiers
Required grid voltage, the drain electrode pulse modulated circuit is used for enable signal and outside TTL pulse signal reality according to input
The drain electrode impulse modulation of existing GaN power amplifiers.
2. a kind of GaN power amplifiers pulse modulated circuit according to claim 1, wherein, the power-on time sequence control circuit bag
Negative supply chip and the RC wave filters that are connected with the negative supply chip respectively and not gate are included, wherein negative supply chip is produced
Raw negative voltage is exported into the grid voltage temperature-compensation circuit after the RC wave filters, and what the negative supply chip was produced makes
Energy signal is drained in pulse modulated circuit by non-output behind the door to described.
3. a kind of GaN power amplifiers pulse modulated circuit according to claim 1 and 2, wherein, the grid voltage temperature-compensation circuit
Including grid voltage regulator circuit, temperature-compensation circuit and adder, the wherein output of the grid voltage regulator circuit and temperature-compensation circuit
End is connected with adder, and the negative voltage of the power-on time sequence control circuit output is input into the grid voltage regulator circuit to produce phase
The grid voltage answered, the temperature-compensation circuit is used for the offset voltage that output is produced because of temperature change, the grid voltage regulator circuit
Output and temperature-compensation circuit the voltage that exports after adder process of output as GaN power amplifiers grid voltage.
4. a kind of GaN power amplifiers pulse modulated circuit according to claim 1 and 2, wherein, the drain electrode pulse modulated circuit
Including with door and on-off circuit, wherein, it is described to be connected with door with on-off circuit, power-on time sequence control circuit produce enable signal
It is input into this and door, while the TTL pulse signal of outside also inputs to this and door, it is defeated Jing after should process two signals with door
Go out to the on-off circuit, control the on-off circuit to produce the drain electrode pulse modulation voltage of GaN power amplifiers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621242414.6U CN206164492U (en) | 2016-11-17 | 2016-11-17 | GaN power amplifier pulse modulation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621242414.6U CN206164492U (en) | 2016-11-17 | 2016-11-17 | GaN power amplifier pulse modulation circuit |
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| Publication Number | Publication Date |
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| CN206164492U true CN206164492U (en) | 2017-05-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621242414.6U Active CN206164492U (en) | 2016-11-17 | 2016-11-17 | GaN power amplifier pulse modulation circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110048677A (en) * | 2018-01-16 | 2019-07-23 | 中兴通讯股份有限公司 | A kind of power amplifier method for controlling power supply and device |
| CN110649902A (en) * | 2019-09-29 | 2020-01-03 | 武汉虹信通信技术有限责任公司 | Power supply time sequence control circuit and method of GaN power amplifier |
| CN112615592A (en) * | 2020-11-25 | 2021-04-06 | 中国电子科技集团公司第二十九研究所 | Miniaturized self-adaptation temperature compensation circuit of high driving capability |
| EP3826173A4 (en) * | 2018-07-19 | 2021-08-25 | ZTE Corporation | Power supply apparatus and method for power amplifier |
| CN113778163A (en) * | 2021-11-11 | 2021-12-10 | 深圳市时代速信科技有限公司 | Gallium nitride device with temperature compensation function |
-
2016
- 2016-11-17 CN CN201621242414.6U patent/CN206164492U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110048677A (en) * | 2018-01-16 | 2019-07-23 | 中兴通讯股份有限公司 | A kind of power amplifier method for controlling power supply and device |
| CN110048677B (en) * | 2018-01-16 | 2023-08-08 | 中兴通讯股份有限公司 | Power amplifier power supply control method and device |
| EP3826173A4 (en) * | 2018-07-19 | 2021-08-25 | ZTE Corporation | Power supply apparatus and method for power amplifier |
| CN110649902A (en) * | 2019-09-29 | 2020-01-03 | 武汉虹信通信技术有限责任公司 | Power supply time sequence control circuit and method of GaN power amplifier |
| CN110649902B (en) * | 2019-09-29 | 2023-04-14 | 武汉虹信科技发展有限责任公司 | Power supply time sequence control circuit and method of GaN power amplifier |
| CN112615592A (en) * | 2020-11-25 | 2021-04-06 | 中国电子科技集团公司第二十九研究所 | Miniaturized self-adaptation temperature compensation circuit of high driving capability |
| CN113778163A (en) * | 2021-11-11 | 2021-12-10 | 深圳市时代速信科技有限公司 | Gallium nitride device with temperature compensation function |
| CN113778163B (en) * | 2021-11-11 | 2022-02-15 | 深圳市时代速信科技有限公司 | Gallium nitride device with temperature compensation function |
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