CN112615592A - Miniaturized self-adaptation temperature compensation circuit of high driving capability - Google Patents
Miniaturized self-adaptation temperature compensation circuit of high driving capability Download PDFInfo
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- CN112615592A CN112615592A CN202011333112.0A CN202011333112A CN112615592A CN 112615592 A CN112615592 A CN 112615592A CN 202011333112 A CN202011333112 A CN 202011333112A CN 112615592 A CN112615592 A CN 112615592A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
Abstract
The invention discloses a miniaturized self-adaptive temperature compensation circuit with high driving capability, which comprises a negative-pressure linear stabilizer, an input end capacitor Ci, an output end capacitor Co, a fixed resistor Ro, an adjustable resistor Radj and a thermistor Rc. The invention provides a miniaturized self-adaptive temperature compensation circuit with high driving capability, which adopts a circuit topological structure based on a thermistor and a negative voltage stabilizer to generate grid voltages of a GaN amplifier at different temperatures so as to realize self-adaptive temperature compensation of a GaN device. The circuit only adds a thermistor in a grid power supply circuit of the GaN power amplifier, so that the grid voltage is self-adaptively adjusted along with the temperature, and the compensation effect is achieved. The full-temperature gain compensation can be realized without increasing the extra loss of a transmitting link, the output gate voltage is not influenced by the size of power amplifier gate current, the driving capability is strong, the circuit is simple, the miniaturization integration is convenient, and the full-temperature gain compensation circuit is suitable for being used in a high-power and high-gain microwave assembly adopting a GaN device.
Description
Technical Field
The invention relates to the technical field of microwave component functional circuits, in particular to a miniaturized self-adaptive temperature compensation circuit with high driving capability.
Background
GaN power amplifiers have been widely used in various types of electronic devices. The GaN device has two significant characteristics in terms of temperature characteristics: firstly, the typical value of the gain/temperature change rate is 0.02 dB/DEG C per stage and is 2.5 times of the change rate of the GaAs device; and secondly, the small signal gain compression degree is larger than that of GaAs in saturated output. Therefore, in order to push the power amplifier to output in a saturated mode, the gain of the small signal of the power amplifier is high. After the two factors are superposed, the GaN power amplifier gain full-temperature change amount is large. How to make the GaN power amplifier have good temperature adaptability through a temperature compensation method in application is one of the difficulties in GaN power amplifier application.
The conventional compensation method is to add an additional temperature compensation attenuator in the power amplifier input preceding-stage radio frequency link, wherein the temperature compensation attenuator is made of a heat-sensitive material, has certain loss (usually 3 dB-8 dB) at normal temperature, reduces loss at high temperature and increases loss at low temperature. The method is based on the premise of increasing extra loss and sacrificing the transmission gain of a link, and the compensation amount is limited.
The other temperature compensation method is to add a temperature compensation circuit based on a GaAs PIN parallel diode in a front-stage radio frequency link, and adjust the bias voltage of the diode through a thermistor and a voltage division network, so as to control the passing amount of radio frequency signals and realize temperature compensation. The method also aims to increase extra loss and sacrifice link transmission gain, and the circuit size is larger, so that the method is difficult to integrate and apply in a miniaturized integrated microwave component.
Chinese patent CN211063605U discloses an ultra-wideband temperature compensation circuit and its wideband receiver, which uses a voltage dividing network of a conventional resistor and a thermistor to realize the adjustment of the gate voltage of a dual-bias low-noise amplifier along with the temperature change, so as to compensate the gain change of high and low temperature. In a GaN high-power amplifier application circuit, because the power amplifier grid current is large (can reach nearly 100mA), the driving capability of the power amplifier is limited by a voltage dividing resistor mode adopted by the compensation method, so that the power amplifier grid voltage is biased and the working point is drifted, therefore, the invention is effective for a medium-low power amplifier with small grid current and is not suitable for a high-power GaN power amplifier with large grid current.
Chinese patent 200820146331.6 discloses an intelligent device for power amplifier tube temperature compensation, which adopts a data processor, a memory, a current collecting circuit, a temperature collecting module, etc. to detect the current of the power amplifier at different temperatures and adjust the grid voltage to realize the compensation. The circuit has complex composition, large volume and high cost, and is not suitable for miniaturization and high-density integrated components.
Disclosure of Invention
In order to overcome the defects in the prior art, the miniaturized self-adaptive temperature compensation circuit with high driving capability provided by the invention solves the problem of temperature adaptability of a GaN power amplifier in a miniaturized integrated component in a full temperature range.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that: a miniaturized self-adaptive temperature compensation circuit with high driving capacity comprises a negative-pressure linear stabilizer, an input end capacitor Ci, an output end capacitor Co, a fixed resistor Ro, an adjustable resistor Radj and a thermistor Rc, wherein an IN end of the negative-pressure linear stabilizer is connected with one end of the input end capacitor Ci and connected with an input voltage Vs, an OUT end of the negative-pressure linear stabilizer is respectively connected with one end of the fixed resistor Ro and one end of the output end capacitor Co and connected with an output voltage Vg, an ADJ end of the negative-pressure linear stabilizer is respectively connected with the other end of the fixed resistor Ro, one end of the adjustable resistor Radj and one end of the thermistor Rc, and the other end of the input end capacitor Ci, the other end of the output end capacitor Co, the other end of the adjustable resistor Radj, the other end of the thermistor.
Further: and the input end capacitor Ci and the output end capacitor Co are both chip ceramic dielectric capacitors or chip tantalum capacitors.
Further: typical capacitance values of the input end capacitor Ci and the output end capacitor Co are both 1 uf-10 uf.
Further: the gate voltage value of the output voltage Vg at different temperatures is determined by a GaN amplifier gain-gate voltage relation curve and the required compensation amount.
Further: when the input voltage Vs and the output voltage Vg satisfy the pressure difference delta V, the output voltage Vg is irrelevant to the input voltage Vs and only relevant to the fixed resistor Ro, the adjustable resistor Radj and the thermistor Rc.
Further: the pressure difference av is greater than or equal to 2V.
Further: the calculation formula of the output voltage Vg is as follows:
in the above formula, RcIs the resistance value of the thermistor Rc, RadjResistance value, R, of adjustable resistor RadjoThe resistance value of the fixed resistance Ro.
The invention has the beneficial effects that: the grid voltage output by the voltage stabilizer in the circuit can be randomly configured according to the working points of different GaN power amplifiers under the normal temperature condition. When the temperature changes, the resistance value of the thermistor changes, so that the grid working voltage is adaptively adjusted, the opening degree of a GaN power amplifier drain-source channel can be controlled, and the gain compensation function is realized. The temperature compensation method is applied to various miniaturized integrated components, the transmitting link with the normal temperature gain of 45dB can be promoted to only change 3dB from 12dB within the temperature range of-55 ℃ to +70 ℃ through multi-stage compensation in the same transmitting link, the saturation output power changes +/-1 dB, and the problem of temperature adaptability of a GaN power amplifier in the miniaturized integrated components within the full temperature range is solved.
Compared with the existing temperature compensation method, the miniaturized self-adaptive temperature compensation method for the GaN power amplifier can realize full-temperature gain compensation without additional loss by adopting a self-adaptive adjustment compensation mode of the gate voltage of the amplifier, has strong driving capability, small volume and good compensation effect, and is suitable for being used in a high-power and high-gain microwave assembly adopting a GaN device.
Drawings
FIG. 1 is a schematic block diagram of the circuit of the present invention;
FIG. 2 is a graph showing the corresponding small signal gain curves of a typical GaN power amplifier at different gate voltages;
fig. 3 is a graph showing the resistance of a thermistor in a temperature compensation circuit for a typical GaN power amplifier as a function of temperature.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
As shown IN fig. 1, a miniaturized adaptive temperature compensation circuit with high driving capability includes a negative voltage linear stabilizer, an input end capacitor Ci, an output end capacitor Co, a fixed resistor Ro, an adjustable resistor Radj, and a thermistor Rc, an IN end of the negative voltage linear stabilizer is connected to one end of the input end capacitor Ci and connected to an input voltage Vs, an OUT end of the negative voltage linear stabilizer is connected to one end of the fixed resistor Ro and one end of the output end capacitor Co and connected to an output voltage Vg, an ADJ end of the negative voltage linear stabilizer is connected to the other end of the fixed resistor Ro, one end of the adjustable resistor Radj, and one end of the thermistor, and the other end of the input end capacitor Ci, the other end of the output end capacitor Co, the other end of the adjustable resistor Radj, the other end of the thermistor Rc, and the negative voltage linear stabilizer are all connected to ground.
The input end capacitor Ci and the output end capacitor Co are chip ceramic dielectric capacitors or chip tantalum capacitors (the polarity of the tantalum capacitors should be noticed), the typical capacitance value is 1 uf-10 uf, and the capacitor is used for filtering interference signals in a circuit and ensuring stable operation of a device.
According to the working principle of the linear voltage regulator, when the input voltage Vs and the output voltage Vg satisfy a certain voltage difference Δ V (usually Δ V ≧ 2V), the output gate voltage Vg is irrelevant to Vs and only relevant to the fixed resistor Ro, the adjustable resistor Radj and the thermistor Rc, and the calculation formula is as follows:
in the above formula, RcIs the resistance value of the thermistor Rc, RadjResistance value, R, of adjustable resistor RadjoThe resistance value of the fixed resistance Ro.
The gate voltage magnitude of Vg at different temperatures is determined by the GaN amplifier gain-gate voltage relationship and the amount of compensation required.
First, the gain-gate voltage dependence of the compensation amplifier needs to be known: a typical gain-gate voltage relationship for a GaN amplifier at room temperature is shown in fig. 2. The amplifier works in a Vg-1.6V state at normal temperature, and the gain curve is one.
Meanwhile, through tests, the gain is increased by about 2dB at the temperature of-55 ℃ relative to the normal temperature, and the gain is reduced by about 1dB at the temperature of +70 ℃. Therefore, the temperature compensation amount between-55 ℃ and +70 ℃ is 3 dB.
And then, determining that the full-temperature working state required to be constructed is as follows by combining a gain-gate voltage relation curve and the compensation quantity:
normal temperature +25 deg.C: vg is-1.6V, gain curve one;
high temperature +70 deg.C: vg is-1.45V, and the gain curve is two;
low temperature-55 deg.C: vg is-1.75V, gain curve three;
finally, according to the formula (1) and the gate voltage requirements at different temperatures, the R in the schematic diagram shown in FIG. 1 is synthesizedc、RadjAnd RoThe resistance value.
Namely: when V iss-12V (or. DELTA.V.gtoreq.2V), Ro＝120Ω，Radj＝50Ω，Rc＝25Ω(+70℃)，Rc＝100Ω(+25℃)，RcWhen 4300 Ω (-55 deg.C), then Vg＝-1.45V(+70℃)，Vg＝-1.6V(+25℃)，Vg＝-1.75V(+70℃)。At this time, the gain compensation amount of the GaN power amplifier is 3dB within the temperature range of-55 ℃ to +70 ℃, and the gain curve of the power amplifier within the full temperature range is located near the curve I in FIG. 2.
The resistance-temperature relationship of the thermistor Rc to be prepared is shown in fig. 3. In the application of the temperature compensation circuit, when the gain-grid voltage relation of the amplifier changes, the impedance network needs to be redesigned, and a proper thermistor is selected.
The invention provides a miniaturized self-adaptive temperature compensation circuit with high driving capability, which adopts a circuit topological structure based on a thermistor and a negative voltage stabilizer to generate grid voltages of a GaN amplifier at different temperatures so as to realize self-adaptive temperature compensation of a GaN device. The circuit only adds a thermistor in a grid power supply circuit of the GaN power amplifier, so that the grid voltage is self-adaptively adjusted along with the temperature, and the compensation effect is achieved. The full-temperature gain compensation can be realized without increasing the extra loss of a transmitting link, the output gate voltage is not influenced by the size of power amplifier gate current, the driving capability is strong, the circuit is simple, the miniaturization integration is convenient, and the full-temperature gain compensation circuit is suitable for being used in a high-power and high-gain microwave assembly adopting a GaN device.
Claims (7)
1. The miniaturized self-adaptive temperature compensation circuit with high driving capacity is characterized by comprising a negative-pressure linear stabilizer, an input end capacitor Ci, an output end capacitor Co, a fixed resistor Ro, an adjustable resistor Radj and a thermistor Rc, wherein an IN end of the negative-pressure linear stabilizer is connected with one end of the input end capacitor Ci and is connected with an input voltage Vs, an OUT end of the negative-pressure linear stabilizer is respectively connected with one end of the fixed resistor Ro and one end of the output end capacitor Co and is connected with an output voltage Vg, an ADJ end of the negative-pressure linear stabilizer is respectively connected with the other end of the fixed resistor Ro, one end of the adjustable resistor Radj and one end of the thermistor Rc, and the other end of the input end capacitor Ci, the other end of the output end capacitor Co, the other end of the adjustable resistor Radj, the other end of the.
2. The miniaturized self-adaptive temperature compensation circuit with high driving capability of claim 1, wherein the input end capacitor Ci and the output end capacitor Co are both chip ceramic dielectric capacitors or chip tantalum capacitors.
3. The miniaturized adaptive temperature compensation circuit with high driving capability according to claim 1, wherein typical capacitance values of the input end capacitor Ci and the output end capacitor Co are both 1uf to 10 uf.
4. The high-driving-capability miniaturized adaptive temperature compensation circuit according to claim 1, wherein the gate voltage magnitude of the output voltage Vg at different temperatures is determined by the GaN amplifier gain-gate voltage relation curve and the required compensation amount.
5. The miniaturized self-adaptive temperature compensation circuit with high driving capability of claim 1, wherein when the input voltage Vs and the output voltage Vg satisfy the voltage difference Δ V, the output voltage Vg is independent of the input voltage Vs and only related to the fixed resistor Ro, the adjustable resistor Radj and the thermistor Rc.
6. The high-driving-capability miniaturized adaptive temperature compensation circuit of claim 5, wherein the voltage difference Δ V is greater than or equal to 2V.
7. The high-driving-capability miniaturized self-adaptive temperature compensation circuit according to claim 1, wherein the output voltage Vg is calculated by the formula:
in the above formula, RcIs the resistance value of the thermistor Rc, RadjResistance value, R, of adjustable resistor RadjoThe resistance value of the fixed resistance Ro.
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