WO2019135426A1

WO2019135426A1 - Organic/inorganic composite thin film deposition apparatus and control method therefor

Info

Publication number: WO2019135426A1
Application number: PCT/KR2018/000202
Authority: WO
Inventors: 한규석; 조용일; 정태중
Original assignee: 엘지전자 주식회사
Priority date: 2018-01-02
Filing date: 2018-01-04
Publication date: 2019-07-11
Also published as: KR20190082610A

Abstract

The present invention relates to an organic/inorganic composite thin film deposition apparatus and a control method therefor, and is characterized by spraying an atomic layer onto a substrate through an atomic layer spray unit, spraying an inert gas onto the substrate so as to remove reaction by-products caused by the atomic layer, spraying a molecular layer onto the substrate through a molecular layer spray unit, and controlling the linear reciprocating motion of the substrate for a predetermined number of times in a first section corresponding to an atomic layer deposition unit and/or a second section corresponding to a molecular layer deposition unit.

Description

Organic / inorganic hybrid thin film deposition apparatus and control method therefor

The present invention relates to an organic-inorganic hybrid thin film deposition apparatus and a control method thereof, and more particularly, to an organic / inorganic composite thin film deposition apparatus which deposits a composite organic / inorganic hybrid thin film on a substrate at a high speed using a space division method, atomic layer deposition technique, A deposition apparatus and a control method thereof.

Atomic Layer Deposition (ALD) refers to a technique for depositing a thin film that is a protective film on the surface of an OLED display substrate, a capacitor which is a semiconductor memory element, and the like. Unlike conventional deposition techniques in which a thin film is chemically applied, it is a technology for growing a thin film by increasing the atomic layer by one layer.

In addition, atomic layer deposition is widely used as a method of depositing a thin film on a semiconductor wafer, and is applied to a method of depositing a thin film on a solar cell substrate, an OLED display substrate, and the like.

Molecular Layer Deposition (MLD) refers to a technique for depositing a thin film that is a protective film on the surface of an OLED display substrate. Molecular layer deposition is a technique for growing an organic material on a molecular layer basis.

In the case of the prior art, when atomic layer deposition technique or molecular layer deposition technique is applied to a display substrate, thin film impurity formation is minimized and a thin film can be formed with a uniform thickness. However, the deposition rate is very slow.

One embodiment of the present invention is an organic / inorganic hybrid thin film deposition apparatus capable of depositing inorganic and organic thin films on a substrate a number of times that a user desires by reciprocating a substrate a predetermined number of times in each of an atomic layer deposition section and a molecular layer deposition section And a control method thereof.

Another embodiment of the present invention provides an organic-inorganic hybrid thin film deposition apparatus and a control method thereof capable of shortening a deposition time by depositing a substrate on a substrate in a space division manner in an atomic layer deposition section and a molecular layer deposition section For that purpose.

In another embodiment of the present invention, there is provided an organic / inorganic composite thin film deposition apparatus capable of spraying an atomic layer and a molecular layer without mixing while controlling the atomic layer to be sprayed on a substrate, And a control method thereof.

The technical problem to be solved by the present invention is not limited to the above-described technical problems and other technical problems which are not mentioned can be clearly understood by those skilled in the art from the following description .

According to an embodiment of the present invention, an organic / inorganic hybrid film deposition apparatus includes: a substrate moving unit moving a substrate in a first direction or in a second direction different from the first direction; An atomic layer ejection unit for ejecting an atomic layer onto the substrate; a molecular layer ejection unit for ejecting a molecular layer onto the substrate on the substrate; and an inert gas ejection unit for ejecting an inert gas onto the substrate, A head arranged next to the molecular layer spraying unit and having an inert gas spraying unit arranged between the atomic layer spraying unit and the molecular layer spraying unit; Wherein the control unit controls the substrate moving unit and the head so as to control the substrate moving unit and the head so as to perform a linear reciprocating movement of the substrate for at least a predetermined period of time in at least one of a first section corresponding to the atomic layer ejection unit and a second section corresponding to the molecular layer ejection unit And a control unit for controlling the motion.

According to another aspect of the present invention, there is provided a control method of an organic / inorganic hybrid thin film deposition apparatus, including: spraying an atomic layer on a substrate through an atomic layer deposition unit; Spraying an inert gas onto the substrate to remove reaction byproducts from the atomic layer; Spraying a molecular layer onto the substrate through a molecular layer ejection unit; Spraying an inert gas onto the substrate to remove reaction by-products from the molecular layer; And controlling a linear reciprocating motion of the substrate for a predetermined number of times in at least one of a first section corresponding to the atomic layer deposition unit and a second section corresponding to the molecular layer deposition unit, Wherein the atomic layer ejection unit is arranged next to the molecular layer ejection unit, and an inert gas ejection unit is arranged between the atomic layer ejection unit and the molecular layer ejection unit.

According to an embodiment of the present invention, inorganic and organic thin films can be deposited on the substrate a number of times desired by the user by reciprocating the substrate a predetermined number of times in the atomic layer deposition section and the molecular layer deposition section, respectively, .

According to another embodiment of the present invention, since the thin film deposition time can be shortened by depositing on the substrate in a space division manner in the atomic layer deposition section and the molecular layer deposition section, user convenience can be improved.

According to another embodiment of the present invention, while spraying the atomic layer on the substrate, the atomic layer and the molecular layer can be injected without mixing by controlling the injection of the molecular layer onto the substrate, thereby improving user convenience .

The effects obtained by the present invention are not limited to the above-mentioned effects, and other effects not mentioned can be clearly understood by those skilled in the art from the following description will be.

FIG. 1 is a view illustrating a configuration of an organic / inorganic hybrid thin film deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a flowchart illustrating a control method of the organic / inorganic hybrid thin film deposition apparatus according to an embodiment of the present invention. Referring to FIG.

3 is a view showing a head of the organic / inorganic hybrid thin film deposition apparatus according to an embodiment of the present invention.

4 is a view illustrating a head and an exhaust pipe connected to each other according to an embodiment of the present invention.

FIG. 5 is a diagram showing the effects of the prior art and the present invention with respect to the panel test according to an embodiment of the present invention.

6 is a diagram showing the effects of the prior art and the present invention with respect to characteristics of a film according to an embodiment of the present invention.

7 is a diagram illustrating an atomic layer deposition technique, in accordance with an embodiment of the present invention.

Figure 8 illustrates a molecular layer deposition technique, in accordance with an embodiment of the present invention.

9 is a view showing a concept of a time-division type deposition method according to an embodiment of the present invention.

10 is a view showing a concept of a space division type deposition method according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role.

In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. , &Lt; / RTI > equivalents, and alternatives.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The singular expressions include plural expressions unless the context clearly dictates otherwise.

In the present application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

1, the organic / inorganic hybrid thin film deposition apparatus 100 includes a substrate 10, a substrate moving unit 110, a head 120, a control unit 130, a gas delivery unit 140, a pump unit 150, , And an exhaust pipe (160).

The present invention is a method for manufacturing a substrate 10 by placing a substrate 10 on a substrate moving unit 10 and passing the substrate 10 under the head 120 to form an atomic layer, a molecular layer, a raw material precursor, .

The substrate 10 includes a flexible substrate 10 that can be bent.

The substrate moving unit 110 moves the substrate 10 in a first direction or in a second direction different from the first direction in accordance with a control command from the control unit 130. The substrate 10 may be mounted on a substrate moving unit 110.

The head 120 includes an atomic layer ejection unit 122, a molecular layer ejection unit 124, and an inert gas ejection unit 126.

The atomic layer ejection unit 122 ejects the atomic layer onto the substrate 10. The atomic layer ejection unit 122 ejects the precursor onto the substrate 10.

The molecular layer ejection unit 124 ejects the molecular layer onto the substrate 10. The molecular layer ejection unit 124 ejects the precursor onto the substrate 10.

An inert gas injection unit (126) injects an inert gas onto the substrate (10). Here, the inert gas includes nitrogen, argon, and the like. The inert gas injection unit 126 injects an inert gas onto the substrate 10 to remove reaction precursors, impurities, and the like physically adsorbed on the surface of the substrate 10.

According to one embodiment of the present invention, the atomic layer ejection unit 122 is arranged next to the molecular layer ejection unit 124, and the inert gas ejection unit 124 is disposed between the atomic layer ejection unit 122 and the molecular layer ejection unit 124. [ (126).

According to another embodiment of the present invention, the atomic layer ejection unit 122 is arranged in parallel next to the molecular layer ejection unit 124, and inactive between the atomic layer ejection unit 122 and the molecular layer ejection unit 124 The gas injection units 126 are arranged in parallel.

The control unit 130 controls the substrate moving unit 110 and the head 120. The controller 130 controls the linear reciprocating motion of the substrate for a predetermined number of times in at least one of the first section corresponding to the atomic layer ejection unit 122 and the second section corresponding to the molecular layer ejection unit 124 . A detailed description thereof will be described later with reference to FIG.

The gas delivery unit 140 supplies the precursor to the head 120 using gas. In this case, the control unit 130 can adjust the flow rate of the gas through the gas delivery unit 140 for each precursor.

The pump unit 150 discharges the supplied gas and reaction by-products to the outside.

The exhaust pipe 160 is connected to the pump unit 150 and the exhaust pipe 160 exhausts the gases injected onto the substrate 10 in the reciprocating movement of the head 120 in the first section.

FIG. 2 is a flowchart illustrating a control method of the organic / inorganic hybrid thin film deposition apparatus according to an embodiment of the present invention. Referring to FIG. The present invention is performed by the control unit (130).

Referring to FIG. 2, an atomic layer is first sprayed onto a substrate 10 through an atomic layer ejection unit 122 (S210).

Next, the inert gas is injected into the substrate 10 through the inert gas injection unit 126 to remove reaction by-products from the atomic layer (S220).

The molecular layer is sprayed onto the substrate 10 through the molecular layer injection unit 124 (S230).

The inert gas is injected into the substrate 10 through the inert gas injection unit 126 to remove reaction by-products by the molecular layer (S240).

Controls the linear reciprocating motion of the substrate 10 for a predetermined number of times in at least one of the first section corresponding to the atomic layer ejection unit 122 and the second section corresponding to the molecular layer ejection unit 124 (S250).

Here, the atomic layer ejection unit 122 is arranged next to the molecular layer ejection unit 124, and the inert gas ejection unit 126 is arranged between the atomic layer ejection unit 122 and the molecular layer ejection unit 124.

According to one embodiment of the present invention, the atomic layer ejection unit 122 is arranged in parallel next to the molecular layer ejection unit 124, and is arranged between the atomic layer ejection unit 122 and the molecular layer ejection unit 124, The injection units 126 are arranged in parallel.

Referring to FIG. 3, the head 120 includes an atomic layer ejection unit 122, a molecular layer ejection unit 124, and an inert gas ejection unit 126.

The controller 130 controls the operation of the atomic layer deposition unit 122 in at least one of the first section 310 corresponding to the atomic layer ejection unit 122 and the second section 320 corresponding to the molecular layer ejection unit 124, Thereby controlling the linear reciprocating motion of the substrate 10.

The substrate moving unit 110 moves the substrate 10 in a first direction 20 or in a second direction 30 different from the first direction 20 in accordance with a control command from the control unit 130. The second direction 30 may be opposite to the first direction 20.

The first section 310 is a section in which the atomic layer ejection unit 122 ejects the atomic layer. The second section 320 is a section in which the molecular layer injection unit 124 injects the molecular layer.

The atomic layer ejection unit 122 includes a first atomic layer ejection unit 122-1 and a second atomic layer ejection unit 122-2. The first atomic layer ejection unit 122-1 ejects the first atomic layer onto the substrate 10 in accordance with a control command from the control unit 130. [

In addition, the first atomic layer ejection unit 122-1 ejects the first precursor onto the substrate 10 in accordance with a control command from the control unit 130. [ Here, a precursor refers to a substance at a stage before a certain substance is reacted in a certain reaction. The first precursor refers to the material before the formation of the atomic layer.

The second atomic layer ejection unit 122-2 ejects the second atomic layer onto the substrate 10 in accordance with the control command from the control unit 130. [

When the second atomic layer is different from the first atomic layer, the first atomic layer deposition unit 122-1 and the second atomic layer deposition unit 122-2 can jet different atomic layers onto the substrate 10 .

If the second atomic layer is identical to the first atomic layer, the first atomic layer ejection unit 122-1 and the second atomic layer ejection unit 122-2 can eject the same atomic layer onto the substrate 10 .

The molecular layer ejection unit 124 includes a first molecular layer ejection unit 124-1 and a second molecular layer ejection unit 124-2. The first molecular layer ejection unit 124-1 ejects the first molecular layer onto the substrate 10 in accordance with a control command from the control unit 130. [ The second molecular layer injection unit 124-2 injects the second molecular layer onto the substrate 10 in accordance with a control command from the control unit 130. [

When the second molecular layer is different from the first molecular layer, the first molecular layer injection unit 124-1 and the second molecular layer injection unit 124-2 can inject different molecular layers onto the substrate 10 .

If the second molecular layer is identical to the first molecular layer, the first molecular layer injection unit 124-1 and the second molecular layer injection unit 124-2 can jet the same atomic layer onto the substrate 10 .

The inert gas injection unit 126 includes a first inert gas injection unit 126-1, a second inert gas injection unit 126-2, a third inert gas injection unit 126-3, a fourth inert gas injection unit 126-3, A second inert gas injection unit 126-4, and a fifth inert gas injection unit 126-5.

The first inert gas ejection unit 126-1 ejects the first inert gas onto the substrate 10 according to a control command from the control unit 130. [ The second inert gas ejection unit 126-2 ejects the second inert gas onto the substrate 10 in accordance with a control command from the control unit 130. [ The third inert gas ejection unit 126-3 ejects a third inert gas onto the substrate 10 in accordance with a control command from the control unit 130. [ The fourth inert gas ejection unit 126-4 ejects the fourth inert gas onto the substrate 10 in accordance with a control command from the control unit 130. [ The fifth inert gas ejection unit 126-5 ejects the fifth inert gas onto the substrate 10 in accordance with a control command from the control unit 130. [

The first inert gas, the second inert gas, the third inert gas, the fourth inert gas, and the fifth inert gas may all be the same.

Further, the first inert gas, the second inert gas, the third inert gas, the fourth inert gas, and the fifth inert gas may all be different.

According to one embodiment of the present invention, the atomic layer and the molecular layer can be injected without mixing.

3, when the atomic layer ejection unit 122 ejects the atomic layer onto the substrate 10-1, the control unit 130 causes the molecular layer ejection unit 124 to eject the molecular layer onto the substrate 10-2 In order to prevent the ink droplets from being ejected. The substrate 10-1 can reciprocate right and left in the first section 310 according to a control command from the controller 130. [ Further, the substrate 10-1 may be mounted on the substrate moving unit 110. [ Accordingly, the substrate moving unit 110 can reciprocate right and left in the first section 310 in accordance with a control signal from the control section 130. In this case, the substrate moving unit 110 can reciprocate right and left in the first section 310 for a predetermined number of times according to a control signal from the control unit 130. [

During the reciprocating movement a predetermined number of times in the first section 310, the substrate moving unit 110 does not enter the second section. Here, the predetermined number of times means a natural number of 1 or more.

The substrate 10-2 can reciprocate right and left in the second section 320 according to a control command from the controller 130. [ Further, the substrate 10-2 may be installed on the substrate moving unit 110

For convenience of explanation, when the substrate 10 is in the first section 310, it is indicated by the substrate 10-1, and when the substrate 10 is in the second section 320, .

The control unit 130 also controls the atomic layer deposition unit 122 so that the atomic layer deposition unit 122 does not spray the atomic layer onto the substrate 10-1 while the molecular layer deposition unit 124 injects the molecular layer onto the substrate 10-2 .

The substrate moving unit 110 does not enter the first section 310 during a predetermined number of reciprocating movements in the second section 320.

According to the present invention, the controller 130 introduces the switching concept in the first section 310 and the second section 320, and the controller 130 sets the first section 310 to the ON state and the second section 320 to the Off state . Alternatively, the controller 130 may control the first section 310 to be in an ON state and the second section 320 to be in an Off state.

The control unit 130 controls the first section 310 to be in the ON state while the substrate 10 reciprocates the first section 310 a predetermined number of times and the second section 320 is in the OFF state . The controller 130 controls the second section 320 to be in the ON state and the first section 310 to the OFF state while the substrate 10 reciprocates the predetermined number of times in the second section 320 . The controller 130 controls the first section 310 and the second section 320 to be in an ON state while the substrate 10 reciprocates in the first section 310 and the second section 320 by a predetermined number of times do. Here, the predetermined number of times may be a natural number of 1 or more.

According to the present invention, it is possible to more finely control the number of atomic layer deposition times and the number of molecular layer deposition times, so that the thin film can be deposited on the substrate by a user's desired number of times, thereby improving user convenience.

According to an embodiment of the present invention, the distance between the head and the substrate can be kept constant.

3, when at least one of the atomic layer ejection unit 122, the molecular layer ejection unit 124 and the inert gas ejection unit 126 ejects an object onto the substrate 10, The distance between the head 120 and the substrate 10 during the reciprocating movement of the substrate 10-1 in the first section 310 and the reciprocating movement of the substrate 10-2 in the second section 320 is And is kept constant by a predetermined distance 50. Here, the predetermined distance 50 may be 300 to 500 micrometers. In addition, when the predetermined distance 50 is 300 to 500 micrometers, it can be an optimum distance at which the process stability is maintained.

If the distance between the head 120 and the substrate 10 is too close to the substrate 10, the head 120 and the substrate 10 may collide with each other to cause a problem in forming the composite film on the substrate 10. In addition, if the distance between the head 120 and the substrate 10 is too great, it is difficult to inject the inorganic film and the organic film at correct positions, which may cause problems in forming the composite film on the substrate 10. Here, the composite film means a film in which an inorganic film and an organic film are mixed.

According to the present invention, there is an advantage that the distance between the head 120 and the substrate 10 can be kept constant by a predetermined distance, and the composite film can be efficiently formed on the substrate 10.

According to the present invention, the inert gas can be injected onto the substrate at different injection pressures in different sections.

Referring to FIG. 3, the controller 130 injects inert gas at different injection pressures in the first section 310 and the second section 320.

Specifically, the controller 130 controls the inert gas injection pressure of the second section 320 to be greater than the inert gas injection pressure of the first section 310.

For example, when the magnitude of the inert gas injection pressure in the first section 310 is 1.0 atm, the controller 130 controls the magnitude of the inert gas injection pressure in the second section 320 to 1.2 atmospheres in the first section 310 Of the inert gas injection pressure of the inert gas.

Because the first section 310 corresponds to the atomic layer and the second section 320 corresponds to the molecular layer. Accordingly, since the molecular layer is larger in size and slower in motion than the atomic layer, the injection pressure of the inert gas in the second section 320 is larger than the inert gas injection pressure in the first section 310, Can be removed.

According to an embodiment of the present invention, the atomic layer may be injected for a predetermined time in the first section and the molecular layer may be injected for a predetermined time in the second section.

Referring to FIG. 3, the controller 130 injects the atomic layer for a first predetermined time in the first section 310 and the molecular layer for a second predetermined time in the second section 320.

For example, the ratio of atomic layer to molecular layer can be 1: 2. In this case, the controller 130 injects the atomic layer for the first unit time in the first section 310 and injects the molecular layer for the second unit time in the second section 320.

For example, the ratio of atomic layer to molecular layer can be 2: 1. In this case, the controller 130 injects the atomic layer for the second unit time in the first section 310 and injects the molecular layer for the first unit time in the second section 320.

Therefore, the present invention has an advantage that the ratio of the atomic layer to the molecular layer can be freely controlled.

According to an embodiment of the present invention, the substrate 10 reciprocates a predetermined number of times in a first section corresponding to an atomic layer in accordance with a control command from the control section 130, You can make a round trip.

The head 120 includes a first section 310 indicating an atomic layer deposition section and a second section 320 indicating a molecular layer deposition section.

The substrate moving unit 110 moves the substrate 10 in the first section 310 by m times and in the second section 320 by the control command from the control section 130 n times. Y repetition means the number of repetitions in the entire section including the first section 310 and the second section 320. [ Here, m, n, and Y mean natural numbers.

For example, when m = 4, n = 3 and Y = 10, the inorganic film is deposited four times in the first section 310, the organic film is deposited three times in the second section 320, 310) and the second section 320, and repeats this 10 times.

According to the present invention, since the inorganic film and the organic film can be injected in various composition ratios according to the number of reciprocations of the first section 310 and the second section 320 and the number of repetitions in the entire section, There is an advantage that it can be manufactured.

Referring to FIG. 4, the organic / inorganic hybrid thin film device 100 includes an exhaust pipe 160 and a head 120. The exhaust pipe 160 exhausts the gases injected onto the substrate 10 in the process of reciprocating the head 120 in the first section.

Referring to FIG. 5 (a), only the inorganic film 520 is deposited on the OLED panel 510 in the prior art. Accordingly, when the water 540 is injected, the inorganic film 520 passes a part of the water, so that a spot 550 is formed on the OLED panel 510.

Referring to FIG. 5 (b), in the case of the present invention, a plurality of inorganic films 520 and an organic film 530 are deposited on an OLED panel 510. Therefore, when the water 540 is injected, the plurality of inorganic films 520 and the organic film 530 hardly pass through the water, so that the odor 550 is hardly generated on the OLED panel 510.

According to the present invention, it has an excellent waterproof function as compared with the prior art using an inorganic single film and has an advantage of not causing stains on the panel.

Referring to FIG. 6, the prior art uses an inorganic single film, and the present invention uses a organic composite film.

In the case of the present invention, when the temperature is 90 degrees, the ratio of the inorganic material to the organic material is 5: 1, the ratio of the inorganic material to the organic material is 19: 1 State. The technical feature of the present invention is characterized in that the composite thin film of the present invention is produced at high speed by using the space division deposition method at atmospheric pressure. Here, the normal pressure state means a case where the atmospheric pressure is 1 atm and the temperature is 90 to 150 degrees.

The prior art was primarily vacuum deposition of thin films. When the thin film deposition is performed in a vacuum, there is a problem in that it is costly to create a vacuum environment. Since the present invention can be carried out at normal pressure, there is an advantage that cost can be saved compared with the prior art which is executed in a vacuum state.

In this specification, meaningful characteristics of the characteristics of the film will be described. First, the refractive index will be described.

Refractive index means the ratio of the sine of the incident angle to the sine of the refraction angle when the light or electromagnetic wave is incident on another medium from one medium. The refractive index of the thin film means that the performance of the thin film is good as the refractive index of the glass approaches 1.5.

Referring to FIG. 6, in the case of the prior art, the refractive index has a value of 1.6 or more. On the other hand, in the case of the present invention, a) has 1.589 when the ratio of the organic / inorganic material is 5: 1, and 1.597 when the organic / inorganic material ratio is 19: 1.

Therefore, the present invention is superior in the performance of the thin film because the refractive index is close to 1.5 as compared with the prior art.

Thin film stress refers to the resistance generated in the thin film in response to the magnitude of an external force such as compression, tensile, bending, or twisting applied to the thin film. The thin film stress means that the smaller the absolute value, the better the performance of the thin film. This is because the smaller the stress value of the thin film, the easier it is for the user to make the desired thin film.

Referring to FIG. 6, in the case of the prior art, the thin film stress is 177 Mpa and 573 Mpa. On the contrary, in the case of the present invention, when the organic / organic ratio is 19: 1, it has a value of-56 Mpa. Herein, the minus sign means directionality and means that the plus sign and the direction are opposite.

Accordingly, the present invention is superior to the prior art in the performance of the thin film because the absolute value of the thin film stress is small.

Water Vapor Transmission Rate (WVTR) is the rate at which water per unit area can penetrate. The lower the moisture permeability, the better the performance of the thin film. This is because it is possible to prevent the water from passing through and passing through the thin film.

Referring to FIG. 6, in the case of the prior art, the moisture permeability has a value of minus cubic divisions of 10. On the other hand, in the case of the present invention, the water permeability is 7.6 x 10 ^< ^-4 > and has a value of minus four squared of 10.

Therefore, the present invention is superior in the performance of the thin film because the moisture permeability is small in comparison with the prior art.

Referring to FIG. 7, first, the atomic layer ejection unit 122 ejects the precursor A 20 and the by-product 30 onto the substrate 10 (S710).

Next, the inert gas ejection unit 126 ejects an inert gas onto the substrate 10 to remove the by-product 30 (S720).

The atomic layer ejection unit 122 ejects the precursor B 40 and the by-product 30 onto the substrate 10 (S730).

The inert gas ejection unit 126 ejects the inert gas onto the substrate 10 to remove the by-product 30 (S740).

The above steps S710 to S740 are repeated.

Referring to FIG. 8, first, the molecular layer injection unit 124 injects the precursor A 20 and the by-product 30 onto the substrate 10 (S810).

Next, the inert gas injection unit 126 injects the inert gas onto the substrate 10 to remove the by-product 30 (S820).

The molecular layer injection unit 124 injects the precursor B 40 and the by-product 30 onto the substrate 10 (S830).

The inert gas injection unit 126 injects the inert gas onto the substrate 10 to remove the by-product 30 (S840).

The above steps S810 to S840 are repeated.

Referring to FIG. 9 (a), in the case of the time-divisional deposition method, the material to be injected varies with time. That is, the precursor A, the inert gas, the precursor B, and the inert gas are sequentially injected at each time interval. The present invention is performed by the control unit (130).

Specifically, in the case of 0 <t <t1, the precursor A is sprayed onto the substrate 10.

In the case of t1 <t <t2, an inert gas is sprayed onto the substrate 10 to remove by-products.

In the case of t2 < t < t3, the precursor B is sprayed onto the substrate 10.

In the case of t3 <t <t4, an inert gas is sprayed onto the substrate 10 to remove by-products.

Repeat the above procedure for the section after t4.

FIG. 9 (b) shows spraying of the precursor A, the inert gas, the precursor B, and the inert gas in chronological order.

Specifically, in the case of 0 <t <t1, the precursor A portion is activated. That is, the atomic layer ejection unit 122 ejects the precursor A onto the substrate 10 in accordance with the control command from the control unit 130. Here, a precursor refers to a substance at a stage before a certain substance is reacted in a certain reaction. Precursor A refers to the material prior to the formation of the atomic layer.

In the case of t1 <t <t2, the inert gas portion is activated. That is, according to the control command from the controller 130, the inert gas injection unit 126 injects the inert gas onto the substrate 10 to remove the by-products.

In the case of t2 < t < t3, the precursor B portion is activated. The molecular layer injection unit 124 injects the precursor B onto the substrate 10 in accordance with a control command from the control unit 130. [ Here, a precursor refers to a substance at a stage before a certain substance is reacted in a certain reaction. Precursor B refers to the material before the formation of the molecular layer.

For the interval t3 <t <t4, the inert gas portion is activated. That is, according to the control command from the controller 130, the inert gas injection unit 126 injects the inert gas onto the substrate 10 to remove the by-products.

Repeat the above procedure for the section after t4.

In the case of the time-division-type deposition method, a high-quality thin film can be deposited on a substrate based on chemical bonding, but the deposition rate is slow.

Referring to FIG. 10 (a), the position of the substrate 10 may start from 0 and change to D1, D2, and D3. The current position of the substrate 10 is set to D. [ Here, among the distances D1, D2, and D3, the distance D3 from the origin is the largest, and D1 is the smallest.

Specifically, in the case of 0 <D <D1, the precursor A region is activated. That is, the atomic layer ejection unit 122 ejects the precursor A onto the substrate 10 in accordance with the control command from the control unit 130. Here, a precursor refers to a substance at a stage before a certain substance is reacted in a certain reaction. Precursor A refers to the material prior to the formation of the atomic layer.

In the case of D1 <D <D2, the inert gas region is activated. That is, according to the control command from the controller 130, the inert gas injection unit 126 injects the inert gas onto the substrate 10 to remove the by-products.

In the case of D2 < D < D3, the precursor B region is activated. That is, the molecular layer injecting unit 124 injects the precursor B onto the substrate 10 in accordance with the control command from the control unit 130. Here, a precursor refers to a substance at a stage before a certain substance is reacted in a certain reaction. Precursor B refers to the material before the formation of the molecular layer.

In the case of D2 <D <D3, that is, when the substrate 10 moves from D3 to D2, the precursor B region is activated. The molecular layer injection unit 124 injects the precursor B onto the substrate 10 in accordance with a control command from the control unit 130. [ Here, a precursor refers to a substance at a stage before a certain substance is reacted in a certain reaction. Precursor B refers to the material before the formation of the molecular layer.

In the case of D1 <D <D2, that is, when the substrate 10 moves in the direction D1 from D2, the inert gas region is activated. That is, according to the control command from the controller 130, the inert gas injection unit 126 injects the inert gas onto the substrate 10 to remove the by-products.

In the case of 0 <D <D1, that is, when the substrate 10 moves in the direction of origin from D1, the precursor A region is activated. Repeat the above procedure for the following sections.

FIG. 10 (b) shows spraying of the precursor A, the inert gas, the precursor B, and the inert gas all at a specific time point.

Specifically, when t = t1, the precursor A region, the inert gas region, and the precursor B region are all activated.

According to an embodiment of the present invention, inorganic and organic thin films can be deposited on the substrate a number of times desired by the user by reciprocating the substrate a predetermined number of times in the atomic layer deposition section and the molecular layer deposition section, .

The foregoing description is merely illustrative of the technical idea of the present invention and various changes and modifications may be made without departing from the essential characteristics of the present invention. Therefore, the embodiments described in the present invention are not intended to limit the scope of the present invention, but are intended to be illustrative, and the scope of the present invention is not limited by these embodiments. It is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents, which fall within the scope of the present invention as claimed.

Various embodiments have been described in the best mode for carrying out the invention.

The present invention is used in the field related to a series of organic-inorganic hybrid thin film deposition apparatuses.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims

In the organic / inorganic hybrid thin film deposition apparatus,

A substrate moving unit moving the substrate in a first direction or in a second direction different from the first direction;

An atomic layer ejection unit for ejecting an atomic layer onto the substrate; and a molecular layer ejection unit for ejecting a molecular layer onto the substrate on the substrate; and an inert gas ejection unit for ejecting an inert gas onto the substrate,

Wherein the atomic layer ejection unit is arranged next to the molecular layer ejection unit, and the inert gas ejection unit is arranged between the atomic layer ejection unit and the molecular layer ejection unit;

Controlling the substrate moving unit and the head,

A controller for controlling the linear reciprocating motion of the substrate for a predetermined number of times in at least one of a first section corresponding to the atomic layer ejection unit and a second section corresponding to the molecular layer ejection unit,

Based composite thin film deposition apparatus.
The apparatus of claim 1,

Controlling the atomic layer ejection unit not to eject the molecular layer onto the substrate while the atomic layer ejection unit ejects the atomic layer onto the substrate,

And controlling the atomic layer ejecting unit not to eject the atomic layer onto the substrate while the molecular layer ejecting unit ejects the molecular layer onto the substrate

Organic / inorganic hybrid thin film deposition apparatus.
The apparatus of claim 1, wherein the control unit

Maintaining at least a predetermined distance between the head and the substrate when at least one of the atomic layer ejection unit, the molecular layer ejection unit and the inert gas ejection unit ejects an object onto the substrate

Organic / inorganic hybrid thin film deposition apparatus.
The apparatus of claim 1, wherein the control unit

And injecting inert gas at different injection pressures in the first section and the second section

Organic / inorganic hybrid thin film deposition apparatus.
The apparatus of claim 1, wherein the control unit

And adjusting the size of the inert gas injection pressure in the second section to be larger than the inert gas injection pressure in the first section

Organic / inorganic hybrid thin film deposition apparatus.
The method according to claim 1,

Further comprising a gas delivery unit for supplying a precursor to the head using gas,

Wherein the control unit controls the flow rate of the gas through the gas delivery unit for each of the precursors

Organic / inorganic hybrid thin film deposition apparatus.
The apparatus of claim 1, wherein the control unit

Injecting the atomic layer in the first period for a first predetermined time,

And injecting the molecular layer in the second section for a second predetermined time

Organic / inorganic hybrid thin film deposition apparatus.
A method for controlling an organic / inorganic hybrid thin film deposition apparatus,

Spraying an atomic layer over a substrate, through an atomic layer deposition unit;

Spraying an inert gas onto the substrate to remove reaction byproducts from the atomic layer;

Spraying a molecular layer onto the substrate through a molecular layer ejection unit;

Spraying an inert gas onto the substrate to remove reaction by-products from the molecular layer; And

Controlling a linear reciprocating motion of the substrate for a predetermined number of times in at least one of a first section corresponding to the atomic layer ejection unit and a second section corresponding to the molecular layer ejection unit,

Wherein the atomic layer ejection unit is arranged next to the molecular layer ejection unit and the inert gas ejection unit is arranged between the atomic layer ejection unit and the molecular layer ejection unit

A method of controlling the organic / inorganic hybrid thin film deposition apparatus.