WO2013191469A1 - Atomic layer deposition apparatus - Google Patents

Abstract

A shower head-reciprocating apparatus of an atomic layer deposition apparatus reciprocating the shower head, and a gas supply control apparatus alternately coating a substrate with a first reaction layer and a second reaction layer by repeatedly carrying out, through the shower head, the step of simultaneously injecting a source precursor and a purge gas and the step of simultaneously injecting a reactant precursor and a purge gas. The injected precursor and the purge gas are exhausted through the shower head immediately after the injection. The present invention avoids the mixing of a source precursor and a reactant precursor by not simultaneously injecting a source precursor and a reactant precursor, increases a throughput by simultaneously carrying out the injection of a precursor and the injection and exhaustion of a purge gas, and minimizes the reciprocation length of the shower head, thereby enabling application thereof to a large-size substrate and reducing the size of the apparatus. In addition, the present invention can selectively deposit an atomic layer on a predetermined area of the substrate.

Description

Atomic layer deposition apparatus

This application is subject to Korean Patent Application No. 10-2012-0065954, filed June 20, 2012, Korean Patent Application No. 10-2012-0068196, filed June 25, 2012, and Korean Patent Application Filed July 9, 2012 No. 10-2012-0074317 and Korean Patent Application No. 10-2012-0080232, filed Jul. 23, 2012, incorporated herein by reference.

The present invention relates to a thin film deposition apparatus, and more particularly, to an atomic layer deposition apparatus and method for depositing an atomic layer on a semiconductor substrate.

Atomic layer deposition is widely used as a method of depositing thin films on semiconductor wafers, and has been widely applied as a method of depositing thin films on CIGS solar cell substrates, Si solar cell substrates, and OLED display substrates. A typical atomic layer deposition process consists of four steps with one cycle as follows.

In the first step, a source precursor, for example, trimethyl-aluminum (TMA) is sprayed onto the substrate. The raw material precursor reacts with the surface of the substrate to coat the substrate surface with the first reaction layer.

In the second purge gas injection step, an inert gas such as nitrogen is injected onto the substrate to remove the raw material precursor that is physically adsorbed on the substrate surface.

In the third step, a reactant precursor, for example H 2 O, is sprayed onto the substrate. The reaction precursor reacts with the first reaction layer to coat the substrate surface with the second reaction layer.

In the fourth purge gas injection step, an inert gas is injected onto the substrate to remove the reaction precursor physically adsorbed on the substrate surface. Through such a cycle, a single layer thin film composed of a first reaction layer and a second reaction layer, for example, an Al 2 O 3 thin film, is deposited on a substrate. The cycle is repeated to obtain a thin film of the desired thickness.

The deposition rate of the thin film by the atomic layer deposition method is determined by the time required for the cycle consisting of the four steps, and the thin film deposition rate is slow because the supply of the precursor precursor, the purge gas, the reaction precursor, and the purge gas must be sequentially performed. have.

Referring to FIGS. 1 and 2, another atomic layer deposition method, which is a space division method, is described. 1 and 2 are a side view and a plan view of an atomic layer deposition apparatus according to a space division method, respectively. In the space division method, as illustrated in FIG. 1, the reaction precursor injection port 21, the exhaust port 22, the purge gas injection port 23, the exhaust port 24, the raw material precursor injection port 25, the exhaust port 26, and the purge gas injection port are shown. (27), a shower head (20) composed of an exhaust port (28) and a reaction precursor injection port (29), and a second reaction layer on the substrate (50) by passing the substrate (50) under the shower head. The first reaction layer and the second reaction layer are sequentially coated.

The raw material precursor injected from the raw material precursor injection port 25 is exhausted through the adjacent exhaust ports 24 and 26, and the reaction precursors injected from the reaction precursor injection ports 21 and 29 are respectively the exhaust port 22 and the exhaust port 28. Exhaust through. The purge gas injected from the purge gas injection port 23 is exhausted through the adjacent exhaust ports 22 and 24, and the purge gas injected from the purge gas injection port 27 is exhausted through the adjacent exhaust ports 26 and 28.

In this method, the substrate 50 must be completely penetrated under the shower head 20 as shown in FIG. 2 in order to obtain a uniform film thickness at the edge 50a and the central portion 50b of the substrate. There is a problem that the moving distance is long and the size of the equipment is also large.

In addition, in order to deposit a thin film having a desired thickness at a high speed, there is a problem in that the substrate must be reciprocated 52 at a high speed by the distance 50w of the substrate plus the width 20w of the shower head.

This problem becomes more pronounced as the width 50w of the substrate or the width 20w of the shower head becomes larger. For example, since the CIGS solar cell substrate is 1200 mm wide and 600 mm long, the minimum moving distance of the substrate is 600 mm or more. For another example, the 5.5 generation OLED display substrate is 1500mm wide by 1300mm long, so the minimum moving distance of the substrate is 1300mm or more.

In addition, when the raw material precursor and the reaction precursor are mixed during the high speed movement, particles may be generated, and thus the moving speed of the substrate may be limited, and the design of the shower head 20 may be limited.

In addition, to prevent mixing of the precursor precursor and the reaction precursor, the shower head 20 should be as close to the substrate as possible. For example, the shower head 20 may have a distance of 1 mm or less from the shower head 20 and the substrate 50. Should be placed.

In addition, when the atomic layer is to be selectively deposited only on a specific portion on the substrate, a shadow mask is used in the conventional atomic layer deposition method. An atomic layer is deposited only on a portion not covered by the shadow mask by attaching the shadow mask closely to the substrate and then performing atomic layer deposition. However, since the deposition occurs on the shadow mask during the atomic layer deposition process, the shadow mask needs to be replaced periodically. In addition, there is a need to isolate the shadow mask from the surface of the substrate every time the substrate is replaced, and then mount the shadow mask closely on the substrate when the new substrate is loaded.

As described above, the atomic layer deposition requires an atomic layer deposition apparatus and method designed to have a short cycle time, a small moving distance of a substrate or a shower head, a raw material precursor and a reaction precursor do not mix with each other, and particle generation is prevented.

In addition, atomic layer deposition requires an apparatus and method capable of selectively depositing an atomic layer only on a specific portion of a substrate without using a shadow mask.

The problem to be solved by the present invention is that from this point of view, the cycle time is reduced, the movement distance of the substrate or the shower head is small, the increase in the size of the equipment is suppressed, the raw material precursor and the reaction precursor do not mix with each other, the particle generation is prevented An atomic layer deposition apparatus and method are provided.

In addition, an object of the present invention is to provide an atomic layer deposition apparatus and method capable of selectively depositing an atomic layer only on a specific portion on a substrate without using a shadow mask.

The present invention injects a precursor precursor from the spray units of the shower head to the entire surface of the substrate while moving the shower head or the substrate, and then sprays the reaction precursor onto the entire surface of the substrate while moving the shower head or the substrate in a reverse direction. It is characterized by repeating the operation. Therefore, the present invention can prevent the raw material precursor and the reaction precursor from being mixed since the raw material precursor and the reaction precursor are sprayed on the substrate with a time difference.

In addition, the present invention when spraying the raw material precursor or the reaction precursor to the substrate at the same time spraying the purge gas through the shower head, and immediately after the injection of the injected purge gas and the raw material precursor or the reaction precursor It is characterized in that the exhaust through the shower head. Therefore, the present invention can reduce the cycle time.

In addition, the present invention is characterized in that the movement distance of the shower head or the substrate is short, for example, about 30 mm to 100 mm in pitch of the spray units. Thus, the present invention can increase throughput and reduce equipment size.

In addition, the present invention can selectively deposit an atomic layer only on a specific portion of the substrate without using a shadow mask by adjusting the moving distance of the shower head or the substrate.

An atomic layer deposition apparatus according to an embodiment of the present invention is a substrate support; A shower head having an injection hole surface having a first material injection port, a second material injection port, a purge gas injection port, and an exhaust port and disposed adjacent to the substrate; A moving device configured to reciprocate between the substrate support or the shower head between first and second positions along a first direction; And a first material sprayed onto the substrate through the first material spray hole, a second material sprayed onto the substrate through the second material spray hole, and a purge gas sprayed onto the substrate through the purge gas spray hole. And a control device configured to control supply and interruption of the exhaust provided on the substrate through the exhaust port, wherein the control device is configured to not simultaneously supply the first material and the second material onto the substrate. And to simultaneously supply the purge gas and the exhaust while supplying the first material through the first material injection port or the second material through the second material injection port.

In one embodiment, the injection port surface comprises at least one injection unit, the at least one injection unit extends in a direction perpendicular to the first direction, each injection unit has at least one exhaust port row, A first material jet row and a second material jet row.

In one embodiment, the at least one exhaust outlet row includes a first exhaust outlet row and a second exhaust outlet row, wherein the first material ejection outlet row is disposed between the first exhaust outlet row and the second exhaust outlet row, A second material outlet column is disposed between the first material outlet column and the second outlet column.

In one embodiment, the first material is exhausted through the first exhaust port row and the second material is configured to exhaust through the second exhaust port row.

In one embodiment, the injection unit includes a first purge gas jet row disposed between the first material jet row and the second material jet row.

In one embodiment, a third exhaust port row is provided between the first material injection port row and the first purge gas injection port row, and a fourth exhaust port row is provided between the second material injection port row and the first purge gas injection row row. do.

In one embodiment, a first purge gas jet row is provided between the first exhaust port row and the first material jet row, and a second purge gas jet row is provided between the first material jet row and the third exhaust port row. And a third purge gas injection row is provided between the fourth exhaust port row and the second material injection port row, and a fourth purge gas injection row is provided between the second material injection port row and the second exhaust port row.

In one embodiment, the first material is exhausted through the first and third exhaust rows, and the second material is configured to exhaust through the second and fourth exhaust rows.

In one embodiment, a purge gas injection row is provided between the injection units.

In one embodiment, the injection hole surface may have a purge gas injection hole surface extending from one end of the injection hole surface to the opposite end of the injection hole surface in the first moving direction. The first material and the second material injection holes are not provided on the purge gas injection hole surface. The purge gas injection port surface may include a purge gas injection port. The purge gas injection port surface may include an exhaust port. The purge gas injection port surface may not have any purge gas injection port and an exhaust port. In this embodiment, the atomic layer is not deposited on the substrate surface corresponding to the purge gas injection surface.

In one embodiment, when the substrate is circular, both ends of the injection port surface may be manufactured in the form of an arc.

In one embodiment, the atomic layer deposition apparatus includes a shower head support configured to support the shower head, and the moving device includes a guide block fixed to the shower head and a track fixed to the shower head support. The guide block is fastened to the track so as to reciprocate.

In one embodiment, the atomic layer deposition apparatus includes a shower head support configured to support the shower head, wherein the moving device is fixed to the rotor of the linear motor fixed to the shower head and the shower head support. And a stator of the linear motor.

In one embodiment, the atomic layer deposition apparatus includes a shower head support configured to support the shower head, and is installed below the shower head support to clean air or an inert gas toward the shower head and the substrate support. It is provided with a gas injection port configured to spray.

In one embodiment, the atomic layer deposition apparatus includes a shower head support configured to support the shower head, is fixed to the shower head support, includes an opening, and through the opening the shower head and the substrate. And a first chamber configured to approach the support and surround the shower head and the substrate support.

In one embodiment, the atomic layer deposition apparatus includes an exhaust port disposed around the substrate support, the side wall of the first chamber is configured to be located near the exhaust port.

In one embodiment, the atomic layer deposition apparatus includes a second chamber configured to isolate the shower head support, the shower head and the substrate support, and the exhaust port disposed around the substrate support from the outside.

In one embodiment, the atomic layer deposition apparatus is a first frame, a second frame, one end is fixed to the first frame and the opposite end is fixed to the second frame, the shaft is movable to the shaft And a shower head support fastened to support the shower head and configured to move the shower head support between the first frame and the second frame.

In one embodiment, the at least one injection unit is arranged at equal intervals X along the first direction, wherein the first material injection row of the at least one injection unit is constant from the second material injection row. It is arranged at a distance X1 apart.

In one embodiment, the at least one spraying unit includes a first spraying unit disposed at a first end of the spray hole surface and a second spraying unit disposed at an opposite end of the first end, wherein the shower head is When placed in the first position, the first end of the substrate, which is placed on the substrate support, of the third injection unit disposed adjacent to the second material injection port row 80b of the first injection unit and the first injection unit. It is located between the first material injection port row (80a). The first end may be aligned and positioned on the second material injection port row 80b of the first material injection unit. The second end of the substrate, opposite the first end of the substrate, is X-X1 in the first direction from the second material jet row 80b and the second material jet row 80b of the second jetting unit. It is located between the points separated by the distance of. The second end may be aligned with the point away from the second material injection port row 80b of the second injection unit by a distance of X-X1 in the first direction.

When the shower head is in the second position, the first end of the substrate extends in the first direction from the first material injection row 80a and the first material injection row 80a of the first injection unit. It is located between the points separated by the distance of X-X1 in the reverse direction. The first end may be aligned with the point away from the first material injection port row 80a of the first injection unit by a distance X-X1 in the reverse direction of the first direction. The second end of the substrate is located between the first material injection row 80a of the second injection unit and the second material injection row 80b of the fourth injection unit disposed adjacent to the second injection unit. . The second end may be aligned and positioned on the first material injection port row 80a of the second injection unit.

In one embodiment, the spray units include a first spray unit disposed at a first end of the spray units and a second spray unit disposed at an opposite end of the first end, wherein the shower head comprises the second And a first material spraying unit disposed adjacent to the spraying unit, wherein the first material spraying unit is a distance X along the first direction from the first material spraying row 80a of the second spraying unit. And a first material injection row arranged at a distance from each other and an exhaust row arranged at the front and back of the first material injection row.

In one embodiment, when the shower head is in the first position, the first end of the substrate placed on the substrate support is the second material spray row 80b of the first spray unit and the first spray unit. It is located between the first material injection port row (80a) of the third injection unit disposed adjacent to. The first end may be aligned and positioned on the second material injection port row 80b of the first material injection unit. The second end of the substrate, opposite the first end of the substrate, includes the first material injection row 80a of the first material injection unit and the first material injection row 80a of the first material injection unit. It is located between the points separated by a distance of X1 along the first direction from the. The second end may be aligned with the point away from the first material injection port row 80a of the first material injection unit by a distance X1 in the first direction.

When the shower head is in the second position, the first end of the substrate extends in the first direction from the first material injection row 80a and the first material injection row 80a of the first injection unit. It is located between the points separated by the distance of X-X1 in the reverse direction. The first end may be aligned with the point away from the first material injection port row 80a of the first injection unit by a distance X-X1 in the reverse direction of the first direction. The second end of the substrate is located between the first material injection row 80a of the second injection unit and the second material injection row 80b of the second injection unit. The second end may be located aligned with the second material injection port row 80b of the second injection unit.

In one embodiment, the moving device of the atomic layer deposition apparatus may be configured to rotate reciprocally between a first angular position and a second angular position about a first axis instead of linearly reciprocating the shower head. have.

In one embodiment, the shower head configured to rotate the first axis by the moving device has one spray unit.

In one embodiment, the moving device is configured to pivotally move the shower head between a first angular position and a second angular position about a first axis, wherein the first angular position is the first position and the The second angular position is the second position.

An atomic layer deposition method according to an embodiment of the present invention, the step of placing a substrate on a substrate support; A first material nozzle configured to inject a first material, a second material nozzle configured to inject a second material that reacts with the first material to form an atomic layer, a purge gas nozzle configured to inject a purge gas, and an exhaust Positioning a shower head on the substrate, the shower head including an injection hole surface having an exhaust port connected to an exhaust pump; A first moving step of moving the substrate support or the shower head from a first position to a second position along a first direction; During the first movement step, the second material is not sprayed, the first material is sprayed onto the substrate through the first material spray hole, and at the same time, the second material is sprayed onto the substrate through the purge gas spray hole. Spraying a purge gas and simultaneously exhausting the first material and the purge gas through the exhaust port; A second moving step of moving the substrate support or the shower head along the reverse direction of the first direction from the second position to the first position; And during the second moving step, the first material is not sprayed, the second material is sprayed onto the substrate through the second material spray hole, and at the same time onto the substrate through the purge gas spray hole. Injecting the purge gas and simultaneously exhausting the second material and the purge gas through the exhaust port.

In one embodiment, the injection port surface includes at least one injection unit disposed along the first direction, the at least one injection unit is extended in a direction perpendicular to the first direction, each injection The unit includes a first material inlet row configured to inject the first material, a second material inlet row configured to inject the second material, a purge gas inlet row configured to inject the purge gas and at least one exhaust outlet row. It includes.

In an embodiment, the first material and the second material are not sprayed while the shower head is moved from the first position to the third position in the first moving step, and the second material is not sprayed from the third position. While moving to the position, the second material does not spray but sprays the first material.

In one embodiment, the third position is between the first position and the second position and is closer to or the same as the first position.

In an embodiment, the first material and the second material are not sprayed while the shower head is moved from the second position to the fourth position in the second moving step, and the first material is not sprayed from the fourth position. While moving to the position, the first substance is not sprayed but the second substance is sprayed.

In one embodiment, the fourth position is between the first position and the second position and is closer to or the same as the second position.

In one embodiment, the moving speed of the shower head 120 in the first moving step and the second moving step may be set differently. For example, the moving speed of the first moving step is faster than the moving speed of the second moving step.

In an embodiment, before the first moving step is completed and before the second moving step starts, a first purge gas injection step of blocking the first material and the second material injection and injecting and evacuating only the purge gas may be added. Can be.

In an embodiment, a second purge gas stage may be added to block the injection of the first material and the second substance and to inject and exhaust only the purge gas before the second movement step is completed and the first movement step is started again. Can be.

In one embodiment, the first purge gas injection time and the second purge gas injection time may be different from each other.

In one embodiment, the spacing between the first position and the second position is similar to the spacing between first material jets disposed adjacent to each other along the first direction.

In one embodiment, the spacing between the first position and the second position is less than the spacing between the first material ejection openings disposed adjacent to each other along the first direction. In this embodiment, the atomic layer is not deposited on the entire surface of the substrate, and the atomic layer is deposited only on specific portions of the substrate.

In an embodiment, the first material is exhausted through a first exhaust port of the exhaust port, and the second material is exhausted through a second exhaust port of the exhaust port.

In some embodiments, the purge gas is injected through the second material injection hole during the first moving step, and the purge gas is injected through the first material injection hole during the second moving step. do.

An atomic layer deposition method according to an embodiment of the present invention comprises the steps of placing a substrate on a substrate support; A spraying surface comprising a first material spraying port configured to spray the first material, a second material spraying port configured to spray the second material, a purge gas spraying port configured to spray the purge gas and an exhaust port connected to the vacuum; Positioning a shower head over the substrate; A first moving step of moving the substrate support or the shower head from a first position to a second position along a first direction; During the first movement step, the second material is not sprayed, the first material is sprayed onto the substrate through the first material spray hole, and at the same time, the second material is sprayed onto the substrate through the purge gas spray hole. Spraying a purge gas and simultaneously exhausting the first material and the purge gas through the exhaust port; A second moving step of moving the substrate support or the shower head along the reverse direction of the first direction from the second position to the first position; Injecting the purge gas onto the substrate through the purge gas injection port without spraying the first and second materials during the second movement step; And a third moving step of moving the substrate support or the shower head from the first position to the second position along the first direction. During the third moving step, the first material is not sprayed, the second material is sprayed onto the substrate through the second material spray hole, and at the same time, the second material is sprayed onto the substrate through the purge gas spray hole. And purging the purge gas and simultaneously exhausting the second material and the purge gas through the exhaust port.

In one embodiment, the injection port surface includes at least one injection unit disposed along the first direction, the at least one injection unit is extended in a direction perpendicular to the first direction, each injection The unit has a first material injection column configured to spray the first material, a second material injection column configured to spray the second material and a purge gas nozzle row configured to spray the purge gas.

And at least one exhaust port row.

In one embodiment, the moving speed of the shower head 120 in the first moving step, the second moving step and the third moving step may be set differently.

In one embodiment, the spacing between the first position and the second position is similar to the spacing between the first material ejection openings of the spray units disposed adjacent to each other along the first direction.

In one embodiment, the spacing between the first position and the second position is less than the spacing between the first material ejection openings of the spray units disposed adjacent to each other along the first direction. In this embodiment, the atomic layer is not deposited on the entire surface of the substrate, and the atomic layer is deposited only on a specific portion of the substrate.

In an embodiment, the first material exhausts through a first exhaust port of the exhaust port, and the second material exhausts through a second exhaust port of the exhaust port.

In one embodiment, the purge gas is injected through the second material injection hole during the first moving step, and the purge gas is injected through the first material injection hole during the third moving step. do.

In one embodiment, the purge gas is exhausted through the exhaust port during the second movement step.

In one embodiment, the purge gas is injected through the first material injection hole and the second material injection hole during the second movement step.

According to the present invention, an atomic layer deposition apparatus and method which reduces cycle time, has a small moving distance of a substrate or a shower head, suppresses an increase in equipment size, does not mix raw material precursors and reaction precursors, and prevents particle generation. Can be secured.

In addition, according to the present invention, it is possible to secure an atomic layer deposition apparatus and method capable of selectively depositing an atomic layer only on a specific portion on a substrate without using a shadow mask.

1 is a side view of an atomic layer deposition apparatus according to the prior art.

2 is a plan view of an atomic layer deposition apparatus according to the prior art.

3 is a side view of an atomic layer deposition apparatus according to an embodiment of the present invention.

4 is a front view of an atomic layer deposition apparatus according to an embodiment of the present invention.

5 is a front view of an atomic layer deposition apparatus according to an embodiment of the present invention.

6 is a front view of an atomic layer deposition apparatus according to an embodiment of the present invention.

7 is a front view of an atomic layer deposition apparatus according to an embodiment of the present invention.

8 is a bottom view of the shower head according to the embodiment of the present invention.

FIG. 9 is a sectional view of the shower head shown in FIG. 8; FIG.

FIG. 10 is a sectional view of the shower head shown in FIG. 8; FIG.

11 is a bottom view of the shower head according to the embodiment of the present invention.

12 is a bottom view of the spray unit according to the embodiment of the present invention.

13 is a bottom view of the shower head according to the embodiment of the present invention.

14 is a bottom view of the spray unit according to the embodiment of the present invention.

15 is a plan view of a substrate support according to an embodiment of the present invention.

16 is a plan view of the substrate support and the shower head according to an embodiment of the present invention.

17 is a three-dimensional view of a protective chamber according to an embodiment of the present invention.

18 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

19 is a bottom view of the shower head according to the embodiment of the present invention.

20 is a plan view of an atomic layer deposition apparatus according to an embodiment of the present invention.

21 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

22 is a bottom view of the shower head according to the embodiment of the present invention.

23 is a bottom view of the shower head according to the embodiment of the present invention.

24 is a plan view of a substrate including an atomic layer formed in accordance with an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings looks at in detail with respect to embodiments of the present invention.

3 and 4 are side and front views of the atomic layer deposition apparatus 100 according to an embodiment of the present invention, respectively. 3 and 4, the atomic layer deposition apparatus 100 includes a lower frame 102, an upper frame 104, a shaft 103, a substrate support 110, a shower head support 106, and a shower head 120. ), A shower head reciprocating device 121, a shower head vertical moving device 140, and a gas supply control device 170. The atomic layer deposition apparatus 100 may be a heating device (not shown) capable of heating the substrate support 110, for example, a lamp-type heater or a substrate support 110 installed below the substrate support 110. It may include a heating wire embedded.

One end of the shafts 103 is fixed to the lower frame 103 and the opposite end is connected and fixed to the upper frame 104. The shower head support 106 is fastened to the shaft 103 to be movable in the vertical direction between the upper frame 104 and the substrate support 110.

The shower head 120 is fastened to the overhead track 124 by the guide block 122 to be suspended from the shower head support 106. The guide block 122 is fastened so that one end thereof is fixed to the upper surface of the shower head 120 and the opposite end is movable to the overhead track 124, and the overhead track 124 of the shower head support 106 is fixed. It is fixed to the bottom. The guide block 122 and the overhead track 124 are components of the shower head reciprocating device 121. A contactless magnetic levitation track may be used in place of the overhead track 124 and the guide block 122.

Another component of the shower head reciprocating device 121 may include a linear motor. The linear motor is composed of a rotor 130 (rotator) and a stator 132, stator, the stator 132 is fixed to the bottom surface of the shower head support 106 to have the same direction as the overhead track 124, The rotor 130 is fixed to the upper surface of the shower head 120 to face the stator 132. The rotor 130 may be a permanent magnet and the stator 132 may be a current coil connected to a power source. The first and second positions of the shower head 120 connected to the rotor 130 along the first direction are applied to the rotor 130 by applying an attractive force or repulsive force to the rotor 130 with an electromagnetic force generated when current flows through the stator 132. It can be reciprocated between. The first direction is a direction parallel to the substrate 50 or the substrate support 110.

The shower head vertical movement device 140 is a servo motor 141 fixed to the upper frame 104, a screw 142 rotated by the servo motor 141, one end is fixed to the upper surface of the shower head support 106 And the other end is composed of a female screw (144, female screw) is fastened to be movable to the screw 142. Rotating the screw 142 with the servo motor 141 can move the shower head support 106 in the vertical direction, thus raising and lowering the shower head 120 supported by the shower head support 106 in the vertical direction. Can be lowered.

The vertical position of the shower head 120 shown in FIGS. 3 and 4 is the loading and unloading position of the substrate 50. In the loading and unloading position, the shower head 120 exposes the substrate 50 to the outside of the shower head 120 so that a substrate transfer device (not shown) transfers the substrate 50 to the substrate support 110 or the substrate support. The substrate 50 may be taken from the 110.

5 is a side view of the atomic layer deposition apparatus 100 after the shower head 120 moves downward to the atomic layer deposition position. In the atomic layer deposition position, the shower head 120 is lowered toward the substrate support 110 and the substrate 50 to surround the substrate 50. In addition, when the shower head 120 is placed in the atomic layer deposition position, the nozzle surface 120a of the shower head 120 may be located in a range between 0.2 mm and 3 mm from the substrate surface. According to an embodiment, the injection hole surface 120a may be located in a range of 0.1 mm to 30 mm from the surface of the substrate 50. The distance between the nozzle surface 120a and the substrate surface at the atomic layer deposition position may be controlled by the shower head vertical movement device 140.

The atomic layer deposition apparatus 100 when the shower head 120 is located at the first position 70 and the second position 72 is shown in FIGS. 6 and 7, respectively. 6 and 7 are side views of the atomic layer deposition apparatus 100 when the shower head 120 is positioned at the first position 70 and the second position 72, respectively. The first and second positions 70 and 72 are atomic layer deposition positions.

The atomic layer deposition apparatus 100 simultaneously sprays the raw material precursor and the purge gas when the shower head 120 moves from the first position 70 to the second position 72 to deposit the first reaction layer on the substrate 50. And, when moving from the second position 72 to the first position 70, simultaneously spraying the reaction precursor and the purge gas to coat the second reaction layer on the first reaction layer. The shower head 120 alternately coats the first reaction layer and the second reaction layer on the surface of the substrate 50 while repeatedly reciprocating between the first position 70 and the second position 72 to achieve a desired thickness or desired. As many atomic layers are deposited. The atomic layer deposition apparatus 100 may be configured to exhaust the raw material precursor, the reaction precursor and the purge gas injected onto the substrate 50 in real time through the shower head 120.

Referring to FIGS. 3 and 4 again, gas injection holes 150 may be installed below the shower head support 106. The gas injection hole 150 is connected to a clean air source filtered by the gas supply tube 152 such that there is no inert gas source such as nitrogen or particles, and the purge gas such as inert gas or clean air is showered to the shower head 120 and the substrate support. Configured to spray toward 110. The injected purge gas purges particles that may be generated from the shower head reciprocating apparatus 121 during the reciprocating movement of the shower head 120 to the outside of the atomic layer deposition apparatus 100.

The gas supply control device 170 includes a source precursor, a reaction precursor, a purge gas, and an exhaust gas supplied from the source precursor source and the reaction precursor source, the purge gas source, and the exhaust pump to the shower head 120 through the respective supply pipes 162. Configured to control the supply. The exhaust is used for exhausting the raw material precursor, the reaction precursor and the purge gas. In particular, the gas supply control device 170 is configured not to supply the raw material precursor and the reaction precursor at the same time. The gas supply control device 170 may be configured to simultaneously supply the source precursor and the purge gas, simultaneously supply the reaction precursor and the purge gas, or supply only the purge gas alone. The gas supply control device 170 may be configured to supply the exhaust gas to the shower head 120 while the raw material precursor, the reaction precursor, and the purge gas are supplied. Although only one supply pipe 162 is shown in FIGS. 3 and 4, in practice, dedicated supply pipes for supplying the raw material precursor, the reaction precursor, the purge gas source, and the exhaust are separately installed and connected to the shower head 120.

Raw material and reaction precursor supply lines can use flexible stainless steel hoses, such as Swagelok's FM series hoses. Alternatively, a tube made of a stainless steel liner and a thermally conductive plastic surrounding the liner may be used.

The shower head 120 may embed a coolant supply pipe (not shown) for cooling the shower head 120. The cooling water supply pipe is connected to a cooling water source (not shown) and adjusts the temperature of the shower head 120 while the cooling water circulates between the cooling water source and the shower head 120.

8, 9 and 10, a shower head 120 according to an embodiment of the present invention is described. 8 is a bottom view of the shower head 120, and FIGS. 9 and 10 are cross-sectional views at cut planes 300a and 300b shown in FIG. 8, respectively. The shower head 120 has a jet hole surface 120a, a first inner surface 122a, a second inner surface 122b, a third inner surface 122c, a fourth inner surface 122d, and a first outer surface 123a. ), A second outer side surface 123b, a third outer side surface 123c, a fourth outer side surface 123d, and an edge bottom surface 120b. The first, second, third and fourth inner surfaces 122a-122d form the inner sidewalls of the shower head chamber, and the first, second, third and fourth outer surfaces 123a-123d are the shower heads. Form an outer sidewall of 120. The edge bottom surface 120b is the surface which protruded from the injection hole surface 120a.

The edge bottom surface 120b of the shower head may be provided with purge gas injection holes 90x disposed to surround the injection hole surface 120a. In addition, purge gas injection holes 90y may be disposed on the injection hole surface 120a adjacent to the first, second, third and fourth inner surfaces 122a-122d to surround the injection hole surface 120a. Purge gas nozzles 90x and purge gas nozzles 90y may each be replaced with exhaust ports.

An injection hole surface 120a of the shower head 120 according to an exemplary embodiment of the present disclosure will be described with reference to FIG. 11. 11 is a bottom view of the shower head 120. On the injection hole surface 120a of the shower head 120, n injection units, that is, SU (1), SU (2), ..., SU (n), are provided. The injection units extend in a direction perpendicular to the first direction. SU (1) and SU (n) are respectively disposed at both ends of the injection spherical surface 120a, and the remaining injection units are sequentially disposed along the first direction therebetween.

The injection units may be arranged at regular intervals X along the first direction. The first directional width of the injection unit can for example have a value between 30 mm and 200 mm.

In addition, a purge gas injection port row 90s may be provided between the injection units and disposed to extend in a direction perpendicular to the first direction.

Each injection unit SU is provided with a first exhaust port row 92a and a second exhaust port row 92b disposed at the front and rear ends of the injection unit SU, respectively, which are disposed to extend in a direction perpendicular to the first direction. Between the outlet rows 92a and 92b are provided a precursor precursor injection row 80a and a reaction precursor injection row 80b which are disposed in parallel with them.

The first and second exhaust outlet rows 92a and 92b are connected to an exhaust source (exhaust pump), and each exhaust operation may be individually controlled by the gas supply control device 170.

For example, while the raw material precursor is injected through the raw material precursor injection row 80a and the injection of the reaction precursor through the reaction precursor injection row 80b is stopped, the first exhaust port row adjacent to the raw material precursor injection row 80a ( 92a) is connected to the exhaust to enable exhaust operation, but the exhaust connection 92b adjacent to the reactant precursor injection column 80b may block the exhaust connection such that the exhaust operation is stopped. Similarly, while the reaction precursor is injected through the reaction precursor injection row 80b and the injection of the raw material precursor through the raw precursor injection row 80a is stopped, the second exhaust port row 92b adjacent to the reaction precursor injection row 80b. Is connected to the exhaust to enable the exhaust operation, but the exhaust connection may be interrupted such that the first exhaust port row 92a adjacent the source precursor injection column row 80a is stopped. Accordingly, the first exhaust port row 92a may be used as a dedicated exhaust row of the raw material precursor, and the second exhaust port row 92b may be used as a dedicated exhaust row of the reaction precursor.

Referring to FIG. 11, a purge gas nozzle row 90t may be provided between the raw material precursor injection row 80a and the reaction precursor injection row 80b and disposed to extend in parallel thereto.

In addition, a third exhaust port row 92c disposed in parallel between the raw material precursor injection port row 80a and the purge gas injection port row 90t is provided, and the reaction precursor injection port row 80b and the purge gas injection row row 90t are provided. ) May be provided with a fourth exhaust port row 92d disposed in parallel therewith.

The third and fourth exhaust port rows 92c and 92d are connected to an exhaust source (exhaust pump), and each exhaust operation may be individually controlled by the gas supply control device 170.

For example, the first and third adjacent to the raw material precursor injection row 80a while the raw material precursor is injected through the raw material precursor injection row 80a and the injection of the reaction precursor through the reaction precursor injection row 80b is stopped. Exhaust outlet rows 92a and 92c are connected to the exhaust to enable exhaust operation, while second and fourth exhaust outlet rows 92b and 92d adjacent to reactant precursor inlet rows 80b may be disconnected such that the exhaust operation is interrupted. have. Similarly, while the reaction precursor is injected through the reaction precursor injection row 80b and the injection of the raw material precursor through the raw precursor injection row 80a is stopped, the second and fourth exhaust row adjacent to the reaction precursor injection row 80b. 92b and 92d are connected to the exhaust to enable exhaust operation, but the first and third exhaust port rows 92a and 92c adjacent the source precursor injection column rows 80a may be blocked so that the exhaust connection is interrupted. . Accordingly, the first and third exhaust outlet rows 92a and 92c may be used as dedicated exhaust outlet rows of the raw material precursors, and the second and fourth exhaust outlet rows 92b and 92d may be used as dedicated exhaust outlet rows of the reaction precursors.

In FIG. 11, the precursor precursor injection row 80a, the reaction precursor injection row 80b, the purge gas injection row 90s and 90t, and the exhaust row 92 are composed of nozzles not connected to each other, 12 may be connected to each other and provided in a slit form. FIG. 12 is a bottom view of the spray unit having a slit-shaped spray hole that may be used in the shower head 120 of FIG. 11.

Referring again to FIG. 11, the shower head 120 is further described. When the shower head 120 is placed in the first position 70, the shower head 120 has a first end of the substrate 50 (not shown in FIG. 11). (1) is placed between the reaction precursor injection row 80b and the source precursor injection row 80a of the second injection unit SU (2) 21a, the second end of the substrate being the nth injection unit ( It may be configured to lie between a reaction precursor injection column 80b of SU (n) and a point 21b away from the reaction precursor injection column row 80b by a distance of X-X1 in a first direction. The first end is aligned with the reaction precursor injection row 80b of the first injection unit SU (1), and the second end is the reaction precursor injection row of the nth injection unit SU (n). It may be located aligned with a point away from the 80b by a distance X-X1 in the first direction.

Also, when the shower head 120 is placed in the second position, the shower head 120 has the first precursor of the substrate having the raw material precursor injection row of the first spraying unit SU (1) of the shower head 120. 80a) and a point 22a spaced apart by the distance of X-X1 in the reverse direction of the first direction from the source precursor injector row 80a, and the second end of the substrate is an n-1 th injection unit (SU ( n-1)) between the reaction precursor injection row 80b and the raw material precursor injection row 80a of the nth injection unit SU (n) 22b. The first end is aligned with the point away from the source precursor injection port row 80a of the first injection unit SU1 by a distance of X-X1 in the reverse direction in the first direction, and the second end is The n-th injection unit SU (n) may be aligned with and positioned on the raw material precursor injection port rows 80a.

13, a shower head 420 according to an exemplary embodiment of the present invention is described. 13 is a bottom view of the shower head 420. The shower head 420 is a form in which the raw material precursor spray unit SU (n + 1) is added to the shower head 120. The added raw material precursor spraying unit SU (n + 1) is disposed at one end of the shower head 420 adjacent to the nth spraying unit SU (n). The raw material precursor injection unit SU (n + 1) includes a raw material precursor injection port row 80a which extends in a direction perpendicular to the first direction, and exhaust port rows 92a and 92b are formed before and after the raw material precursor injection port row 80a. The raw material precursor injection port row 80a of the raw material precursor injection unit SU (n + 1) is a predetermined distance X from the raw material precursor injection port row 80a of the nth injection unit SU (n). Can be placed away.

The shower head 420 has a first injection unit (SU (1) of the shower head 420 having a first end of the substrate 50 (not shown in FIG. 13) when the shower head 420 is placed in the first position. ) Is placed between the reaction precursor injection row 80b of the second injection unit SU (2) and the precursor precursor injection row 80a of the second injection unit SU2, and the second end of the substrate is a raw material precursor injection unit SU (n +1)) between the source precursor nozzle row 80a and the point 23b away from the source precursor nozzle row 80a in the first direction by a distance of X1. The first end is positioned to be aligned on the reaction precursor injection port row 80b of the first injection unit SU (1), and the second end is a source precursor of the raw material precursor injection unit SU (n + 1). It may also be aligned at a point away from the injection port row 80a by a distance X1 in the first direction.

Further, when the shower head 420 is placed in the second position, the shower head 420 has the first end of the substrate having the raw material precursor injection row of the first spraying unit SU (1) of the shower head 120. It is placed between the distance (22a) between the 80a) and the distance from the source precursor injection port row 80a by a distance of X-X1 in the reverse direction of the first direction, the second end of the substrate is the n-th injection unit (SU (n) It can be configured to lie between (24b) of the precursor precursor injection row 80a and the reaction precursor injection row (80b). The first end is aligned with the point away from the source precursor injection port row 80a of the first injection unit SU1 by a distance of X-X1 in the reverse direction in the first direction, and the second end is The n th injection unit SU (n) may be aligned and positioned on the reaction precursor injection row 80b.

Referring back to FIG. 11, an embodiment of a method of depositing an atomic layer using the shower head 120 includes the following steps. The method of depositing an atomic layer using the shower head 420 includes the same steps.

(1) a first moving step of moving the shower head 120 from the first position 70 to the second position 72 along the first direction,

(2) The supply of the reaction precursor through the reaction precursor injection column 80b of the injection units SU is interrupted while the first moving step is performed, and the raw material precursor injection column 80a of the injection units SU is blocked. Spraying the raw material precursor onto the substrate 50 through the

(3) injecting purge gas onto the substrate 50 through at least one purge gas jet row 90s and 90t during the first moving step,

(4) exhausting the source precursor and the purge gas through at least one of the exhaust port rows 92a-92d of the injection units SU during the first moving step,

(5) a second moving step of moving the shower head 120 from the second position 72 to the first position 70 along the reverse direction of the first direction,

(6) While the second moving step is in progress, the supply of the raw material precursor through the raw material precursor injection row 80a of the injection units SU is blocked, and the reaction precursor injection row 80b of the injection units SU is blocked. Spraying the reaction precursor onto the substrate 50 through the

(7) injecting purge gas onto the substrate 50 through at least one purge gas nozzle row 90s and 90t during the second movement step, and

(8) exhausting the reaction precursor and the purge gas through at least one exhaust port row 92a-92d of the injection units SU during the second moving step.

According to an embodiment of the present disclosure, the moving speed of the shower head 120 may be set differently in the first moving step and the second moving step. For example, the moving speed of the first moving step is faster than the moving speed of the second moving step. By varying the moving speed, the time for spraying the raw material precursor and the reaction precursor can be controlled differently.

According to an embodiment of the present invention, before the first moving step is completed and before the second moving step starts, a first purge addition step of blocking injection of the raw material precursor and the reaction precursor and injecting and evacuating only the purge gas is added. can do.

According to an embodiment of the present invention, before the second moving step is completed and before the first moving step is started again, a second purge addition step of blocking injection of the raw material precursor and the reaction precursor and injecting and evacuating only the purge gas is performed. You can add

In the first and second purge addition steps, each purge time may be adjusted differently. By varying the purge time, it is possible to purge for longer periods of time between the precursor precursor and the reactant precursor that are poorly purged.

According to one embodiment of the present invention, the purge gas may be injected through the reaction precursor injection column 80b during the first movement step.

According to an embodiment of the present disclosure, at least one of the first and third exhaust port rows 92a and 92c is connected to exhaust during the first movement step to perform the exhaust operation of the raw material precursor and the purge gas. The second and fourth exhaust port rows 92b and 92d may interrupt the connection with the exhaust to stop the exhaust operation. In this embodiment, the first and third exhaust port rows 92a and 92c are used as the raw material precursor exhaust ports, and the second and fourth exhaust port rows 92b and 92d are not used for the raw material precursor exhaust.

According to one embodiment of the present invention, the purge gas may be injected through the reaction precursor injection column 80b during the second movement step.

According to an embodiment of the present disclosure, at least one of the second and fourth exhaust outlet rows 92b and 92d is connected to the exhaust to perform the exhaust operation of the reaction precursor and the purge gas during the second movement step. The first and third exhaust port rows 92a and 92c may interrupt the exhaust operation by blocking the connection with the exhaust. In this embodiment, the second and fourth exhaust port rows 92b and 92d are used as the reaction precursor-only exhaust ports, and the first and third exhaust port rows 92a and 92c are not used for the reaction precursor exhaust.

According to an embodiment of the present invention, the moving distance of the shower head in the first and second moving steps, that is, the interval between the first position 70 and the second position 72 may be determined by the adjacent raw material precursor nozzle rows ( It is similar to the spacing X between 80a or the arrangement spacing X of the injection units SU. By moving the shower head by the distance X of the raw material precursor spraying rows 80a or the arrangement distance X of the spraying units SU, the raw material precursor, the reaction precursor, and the purge gas may be sprayed on the entire surface of the substrate. In this embodiment, an atomic layer is deposited over the entire surface of the substrate.

According to an embodiment of the present invention, the atomic layer may be deposited only on a specific portion of the substrate 50 instead of the entire surface of the substrate 50 by selectively spraying the raw material precursor and the reaction precursor only on a specific portion of the substrate 50. In the case of depositing an atomic layer only on a specific portion of the surface of the substrate 50, the step of spraying the raw material precursor, which is the second step (2) of the above embodiment, may be replaced by the following step (2-1).

Referring to FIG. 11, steps 2-1 are as follows.

(2-1) Raw material precursor injection holes of the injection units SU until the shower head 120 leaves the first position 70 and reaches the third position 74 while the first moving step is in progress. Injection of the precursor precursor through the heat 80a and the injection of the reactant precursor through the reaction precursor injection column 80b are blocked, and at the second position 72 from the time when the shower head 120 passes through the third position 74. Until reaching, the supply of the reaction precursor through the reaction precursor injection column 80b of the injection units SU is continuously blocked, and the raw material precursor is injected onto the substrate 50 through the source precursor injection column 80a. step.

In the step (2-1), the third position 74 is disposed between the first position 70 and the second position 72, and is disposed closer to the first position 70. The third position 74 may coincide with the first position 70.

In the case of depositing an atomic layer only on a specific portion of the surface of the substrate 50, the step of spraying the reaction precursor, which is the sixth step (6) of the embodiment, may be replaced by the following step (6-1).

(6-1) Raw material precursor injection holes of the injection units SU until the shower head 120 leaves the second position 72 and reaches the fourth position 76 while the second movement step is in progress. Injection of the precursor precursor through the heat 80a and the injection of the reaction precursor through the reaction precursor injection column 80b are blocked, and the first position 70 is opened from the time when the shower head 120 passes the fourth position 76. Until reaching, the supply of the raw material precursor through the raw material precursor injection row 80a of the injection units SU is continuously blocked, but the reaction precursor is injected onto the substrate 50 through the reaction precursor injection row 80b. step.

In step (6-1), the fourth position 76 is disposed between the first position 70 and the second position 72, and is disposed closer to the second position 72. The fourth position 76 may coincide with the second position 72.

In the above embodiment, the moving distance of the shower head 120, that is, the distance between the first position 70 and the second position 72, is such that the raw material precursor nozzle rows 80a are adjacent to each other in the shower head 120. The raw material precursor and the reactant precursor may be sprayed only on a part of the substrate surface rather than the gap X or the arrangement interval X of the spray units SU. The atomic layer is deposited only on the portion of the substrate that is simultaneously exposed to the source precursor and the reaction precursor.

In this embodiment, the spacing between the third position 74 and the fifth position 76 is the spacing X between the raw material precursor injector rows 80a adjacent to each other in the shower head 120, or the spray unit. By making it smaller than the arrangement | interval spacing X of the field SU, a raw material precursor and a reaction precursor can be sprayed only to a part rather than the whole surface of a board | substrate.

Another embodiment of a method of depositing an atomic layer using the shower head 120 includes the following steps.

(1) a first moving step of moving the shower head 120 from the first position 70 to the second position 72 along the first direction,

(2) The supply of the reaction precursor through the reaction precursor injection column 80b of the injection units SU is interrupted while the first moving step is performed, and the raw material precursor injection column 80a of the injection units SU is blocked. Spraying the raw material precursor onto the substrate 50 through the

(3) injecting purge gas onto the substrate 50 through at least one purge gas jet row 90s and 90t during the first moving step,

(4) exhausting the source precursor and the purge gas through at least one of the exhaust port rows 92a-92d of the injection units SU during the first moving step,

(5) a second moving step of moving the shower head 120 from the second position 72 to the first position 70 along the reverse direction of the first direction,

(6) While the second moving step is in progress, the supply of the precursor through the precursor precursor injection row 80a and the reaction precursor injection row 80b of the injection units SU is blocked and at least one purge gas injection row ( Spraying purge gas onto the substrate 50 through 90s and 90t),

(7) exhausting the purge gas through at least one of the exhaust port rows 92a-92d of the injection units SU during the second movement step,

(8) a third moving step of moving the shower head 120 from the first position 70 back to the second position 72 along the first direction,

(9) While the third moving step is in progress, the supply of the raw material precursor through the raw material precursor injection row 80a of the injection units SU is interrupted, and the reaction precursor injection row 80b of the injection units SU is blocked. Spraying the reaction precursor onto the substrate 50 through the

(10) injecting purge gas onto the substrate 50 through at least one purge gas nozzle row 90s and 90t during the third moving step, and

(11) exhausting the reaction precursor and the purge gas through at least one exhaust port row 92a-92d of the injection units SU during the third moving step.

According to another embodiment of the present invention, a purge gas may be injected through the reaction precursor injection column 80b during the first movement step.

According to an embodiment of the present disclosure, at least one of the first and third exhaust port rows 92a and 92c is connected to exhaust during the first movement step to perform the exhaust operation of the raw material precursor and the purge gas. The second and fourth exhaust port rows 92b and 92d may interrupt the connection with the exhaust to stop the exhaust operation. In this embodiment, the first and third exhaust port rows 92a and 92c are used as the raw material precursor exhaust ports, and the second and fourth exhaust port rows 92b and 92d are not used for the raw material precursor exhaust.

According to one embodiment of the present invention, the purge gas may be injected through the reaction precursor injection column 80b during the third movement step.

According to an embodiment of the present disclosure, at least one of the second and fourth exhaust outlet rows 92b and 92d is connected to the exhaust to perform the exhaust operation of the reaction precursor and the purge gas during the third movement step. The first and third exhaust port rows 92a and 92c may interrupt the exhaust operation by blocking the connection with the exhaust. In this embodiment, the second and fourth exhaust port rows 92b and 92d are used as the reaction precursor-only exhaust ports, and the first and third exhaust port rows 92a and 92c are not used for the reaction precursor exhaust.

According to an embodiment of the present invention, the first, second, third and fourth exhaust port rows 92a-92d may interrupt the exhaust operation by disconnecting the exhaust during the second movement step. Can be. In this embodiment, the purge gas injected from the purge gas injection port rows 90s and 90t includes an exhaust port (112a in FIG. 15) provided on the substrate support 110 or an exhaust port (109 in FIG. 18) provided around the substrate support. Can be exhausted through.

According to one embodiment of the present invention, the purge gas may be injected through the first material injection port row 80a and the second material injection port row 80b during the second movement step.

According to an embodiment of the present disclosure, the moving speeds of the shower heads in the first, second and third moving stages may be different.

According to one embodiment of the present invention, the moving distance of the shower head in the first, second and third moving steps, that is, the interval between the first position 70 and the second position 72 is adjacent to the first Similar to the spacing X between the material injector rows 80a, or the placement spacing X of the spray units SU. The first material, the second material, and the purge gas may be sprayed on the entire surface of the substrate by moving the shower head by the distance X of the first material spraying rows 80a or the placement distance X of the spraying units SU. have.

In the above embodiment, the moving distance of the shower head 120 in the first, second and third moving steps, that is, the interval between the first position 70 and the second position 72 may be determined by the shower head ( The raw material precursor and the reaction precursor are sprayed only on a part of the substrate surface rather than the entire surface of the substrate by making the distance X between the raw material precursor injection hole rows 80a adjacent to each other at 120 or the placement interval X of the injection units SU. can do.

According to one embodiment of the present invention, at least one of the first, second, third and fourth purge gas nozzle rows 90a, 90b, 90c and 90d may be included in the injection unit SU described with reference to FIG. 11. Can be added. 14 is a bottom view of the injection unit SU with the purge gas nozzle rows 90a-90d added. The first purge gas nozzle row 90a is disposed between the first exhaust port row 92a and the first material injection row row 80a, and the second purge gas nozzle row 90b is connected to the first material nozzle row 80a. The third purge gas injection row 90c is disposed between the third exhaust port row 92c, and the third purge gas injection row 90c is disposed between the fourth exhaust port row 92d and the second material injection row row 80b. 90d) is disposed between the second material outlet row 80b and the second exhaust outlet row 92b.

The first material injected from the first material injection column 80a is exhausted through at least one of the first and third exhaust column 92a and 92c together with the purge gas injected from the adjacent purge gas injection column 90a and 90b. And the second material sprayed from the second material sprayer row 80b is adapted to at least one of the second and fourth exhaust outlet rows 92b and 92d together with the purge gas injected from the adjacent purge gas sprayer rows 90c and 90d. Exhaust through. The purge gas injected from the purge gas injection port row 90t is exhausted through at least one of the third and fourth exhaust port rows 92c and 92d.

The spray unit SU described with reference to FIG. 14 may be used for the shower heads 120 and 420 described with reference to FIGS. 11 and 13.

15 and 16, a substrate support 110 according to an embodiment of the present invention is described. FIG. 15 is a plan view of only the substrate support 110 without the shower head 120, and FIG. 16 is a view of the substrate support 110 and the shower head 120 with the shower head 120 disposed at the first position 70. FIG. Top view.

The substrate support 110 may be formed while the substrate 50 is placed on the inside of the first region 110a in contact with the substrate, and the shower head 120 moves between the first position 70 and the second position 72. And a second region (the area between the outside of the interior of 110a and the interior of the 110b) that is covered by the shower head 120, and a third region (the area between the outside of the interior that is covered by the shower head 120 and 110c). . A heating device for heating the substrate 50 may be embedded in the first region of the substrate support 110, and a cooling water pipe may be embedded in the second and third regions to cool the second and third regions. Can be.

An exhaust port row 112a may be provided on the third area to surround the second area along a boundary with the second area. The exhaust row 112a may exhaust foreign matter that may enter the shower head 120 from outside the shower head 120 or exhaust a raw material precursor or a reaction precursor that may leak from the shower head 120 to the outside. It is composed.

An exhaust port row 112b may be provided on the second area of the substrate support 110 along the third area adjacent to the third area. Exhaust port rows 112c may be provided in the remaining portion of the second region. Exhaust outlet rows 112b and 112c are configured to exhaust the raw material precursors and the reaction precursors that may leak out from the shower head 120.

According to one embodiment, the exhaust outlet row 112b provided on the second region may be replaced by a purge gas ejection outlet row. The purge gas injected from the purge gas nozzle row 112b supplements the supply of purge gas required by the shower head 120 or prevents the second region of the substrate support 110 from being contaminated with the raw material precursor and the reaction precursor. Can be used to

According to one embodiment, the exhaust outlet row 112c provided on the second region may be replaced by a purge gas ejection outlet row. The purge gas injected from the purge gas nozzle row 112c supplements the supply of purge gas required by the shower head 120 or prevents the second region of the substrate support 110 from being contaminated with the raw material precursor and the reaction precursor. Can be used to

17 and 18, a chamber 190 for protecting a shower head 120 and a substrate support 110 according to an exemplary embodiment of the present invention is described. FIG. 17 is a perspective view of the protective chamber 190, and FIG. 18 is a cross-sectional view of the atomic layer deposition apparatus 100 in which the protective chamber 190 is installed.

The protective chamber 190 is secured to the shower head support 106 and includes sidewalls extending from the shower head support 106 toward the substrate support 110. The lower surface of the protective chamber 190 is open toward the substrate support 110. Since the protective chamber 190 is fixed to the shower head support 106, the shower head support 106 may move vertically together with the shower head 120 as the vertical movement of the shower head support 106 occurs. The protective chamber 190 may approach the shower head 120 and the substrate support 110 through the open lower surface.

As shown in FIG. 18, when the shower head 120 is placed in an atomic layer deposition position, the protective chamber 190 has a lower end of the protective chamber 190 at the lower frame 102 and the substrate of the atomic layer deposition apparatus 100. It may be configured to descend near the exhaust port 109 formed between the support 110, or to the inside of the exhaust port 109. The exhaust port 109 is formed along the periphery of the substrate support 110 and is connected to the vacuum pump through the exhaust port 112. The purge gas injected from the gas injection hole 150 installed under the shower head support 106 may be blocked from the outside by the protective chamber 190 and may be exhausted through the exhaust port 109.

As shown in FIG. 18, the atomic layer deposition apparatus 100 may further include an outer chamber 105. The outer chamber extends between the upper frame 104 and the lower frame 102 to provide an enclosed space. The outer chamber 105 has a substrate support 110, a shaft 103, a shower head support 106, and The shower head 120 may be disposed. The outer chamber 105 may be provided with a door (not shown) to allow the substrate to enter and exit.

Although the present invention has been described with reference to specific embodiments, the present invention is not limited by the specific embodiments described above, and the present invention is effectively applied to the modified embodiments in accordance with the spirit of the present invention. For example, it can be used to deposit an atomic layer on a semiconductor substrate as well as other objects. In addition, the present invention has been described by way of example an apparatus and method for depositing an atomic layer on a rectangular substrate. It can also be used for various types of substrates. For example, when the substrate is circular, as shown in FIG. 19, both ends 120r of the shower head 120 or the injection hole surface 120a may be configured to have a curved surface to surround the circular substrate 50. . 19 is a bottom view of shower head 120 for depositing an atomic layer on circular substrate 50. In the injection unit SU used in the shower head 120 of FIG. 19, the exhaust port row 92 and the purge gas injection port row 90 are not shown, but the injection unit SU described with reference to FIGS. 11 and 14 is described. 19 may also be used as the spray unit SU in the shower head 120 of FIG. 19.

Although the present invention has described an apparatus and method for depositing an atomic layer while linearly reciprocating a shower head 120, an apparatus and method for depositing an atomic layer while rotating and reciprocating instead of linear reciprocating movement are also possible. An apparatus and method for depositing an atomic layer while rotating and reciprocating with reference to FIGS. 20 and 21 are described.

FIG. 20 is a plan view of an atomic layer deposition apparatus 500 with a rotary reciprocating device, and FIG. 21 is a cut plane of the atomic layer deposition apparatus 500 along the cutting line 510 shown in FIG. The atomic layer deposition apparatus 500 includes a rotating shower head 520 provided on the substrate support 110. One end 520a of the rotating shower head 520 is fastened to a shaft 524, which shaft 524 is rotatable to a frame of the atomic layer deposition apparatus 500, for example the lower frame 102. Is fastened. The shaft 524 is configured to be able to rotate about the vertical axis 530. To this end, the shaft 524 is connected to a rotation drive (not shown in FIGS. 20 and 21).

The opposite end 520b of the shower head 520 is configured to extend through the edge of the substrate 50 located near the shaft 524 to near the edge of the substrate 50 located far away. Therefore, the length between both ends of the shower head 520 is configured to be larger than the diameter or width of the substrate 50.

The lower surface of the shower head 520 is provided with a jet hole surface (120a). The injection hole surface 120a includes at least one injection unit SU described with reference to FIG. 11. The injection unit SU described with reference to FIG. 14 may be provided. For reference, a bottom view of the rotary shower head 520 equipped with the injection unit SU described with reference to FIG. 14 is illustrated in FIG. 22. The injection unit SU is disposed on the injection hole surface 120a such that the injection hole rows are disposed along the longitudinal direction of the shower head 520. The injection unit SU is connected to the gas injection control device 170 and the source gas supply source 172, the reactive gas supply source 172, the purge gas supply source 172, and the exhaust pump 172 described with reference to FIGS. 3 and 4. do.

The shower head 520 may reciprocate between the first angular position 530a and the second angular position 530b by rotating the shaft 524 about the vertical axis 530. An angle 520a between the first angular position 530a and the second angular position 530b may be less than 90 degrees. Each of the first positions 520a may include one edge 50a of the substrate 50 in which the precursor precursor injected from the precursor precursor injection column 80a of the shower head 520 or the reaction precursor injected from the reaction precursor injection column 80b is disposed. This is where you can coat. Each of the second positions 520b may include a source precursor sprayed from the reaction precursor sprayer row 80b of the shower head 520 or a precursor precursor sprayed from the feedstock precursor sprayer row 80a on the opposite edge 50b of the substrate 50. This is where you can coat. At each of the first positions 520a, the raw material precursor injector rows 80a or the reaction precursor injector rows 80b may be vertically aligned to be in contact with the one edge 50a, and at the second respective positions 520b, the reactant precursors The injection row 80b or the raw material precursor injection row 80b may be vertically aligned to abut the opposite edge 50b.

A plurality of exhaust ports 112a are disposed around the substrate support 110 of the atomic layer deposition apparatus 500. The exhaust ports 112a are configured to exhaust the raw material precursor, the reaction precursor, and the purge gas injected from the injection hole surface 120a of the shower head 529. The rotary shower head 520 may be disposed such that a distance between the injection hole surface 120a and the surface of the substrate 50 is in a range of 0.1 mm to 30 mm. The substrate support 110 and the rotary shower head 520 may be installed in the chamber 105 as shown in FIG. 21.

20 and 22, an embodiment of a method of depositing an atomic layer using a shower head 520 includes the following steps.

(1) a first moving step of rotating the shower head 520 from the first angular position 520a to the second angular position 520b,

(2) The supply of the reaction precursor through the reaction precursor injection column 80b of the shower head 520 is blocked while the first moving step is performed, and the raw material is supplied through the raw material precursor injection column 80a of the shower head 520. Spraying the precursor onto the substrate 50,

(3) injecting purge gas onto the substrate 50 through at least one purge gas injection row 90t of the shower head 520 during the first moving step,

(4) exhausting the source precursor and the purge gas through at least one of the exhaust port rows 92a-92d of the shower head 520 while the first moving step is in progress,

(5) a second moving step of moving the shower head 520 in reverse rotation from the second angular position 520b to the first angular position 520a,

(6) While the second moving step is in progress, the supply of the raw material precursor through the raw material precursor injection row 80a of the shower head 520 is blocked and reacted through the reaction precursor injection row 80b of the shower head 520. Spraying the precursor onto the substrate 50,

(7) injecting purge gas onto the substrate 50 through at least one purge gas inlet row 90t of the shower head 520 during the second moving step, and

(8) exhausting the reaction precursor and purge gas through at least one exhaust row 92a-92d of the shower head 520 while the second moving step is in progress.

Another embodiment of a method of depositing an atomic layer using the shower head 520 includes the following steps.

(1) a first moving step of rotating the shower head 520 from the first angular position 520a to the second angular position 520b,

(2) The supply of the reaction precursor through the reaction precursor injection column 80b of the shower head 520 is blocked while the first moving step is performed, and the raw material is supplied through the raw material precursor injection column 80a of the shower head 520. Spraying the precursor onto the substrate 50,

(3) injecting purge gas onto the substrate 50 through at least one purge gas injection row 90t of the shower head 520 during the first moving step,

(4) exhausting the source precursor and the purge gas through at least one of the exhaust port rows 92a-92d of the shower head 520 while the first moving step is in progress,

(5) a second moving step of moving the shower head 520 in reverse rotation from the second angular position 520b to the first angular position 520a,

(6) While the second moving step is in progress, the supply of precursor through the precursor precursor injection row 80a and the reaction precursor injection row 80b of the shower head 520 is blocked and at least one purge gas injection row 90t Spraying the purge gas onto the substrate 50 through;

(7) exhausting the purge gas through at least one of the exhaust port rows 92a-92d of the shower head 520 while the second movement step is in progress,

(8) a third moving step of rotating the shower head 520 again from the first angular position 520a to the second angular position 520b,

(9) While the third moving step is in progress, the supply of the raw material precursor through the raw material precursor injection row 80a of the shower head 520 is blocked and reacted through the reaction precursor injection row 80b of the shower head 520. Spraying the precursor onto the substrate 50,

(10) injecting purge gas onto the substrate 50 through at least one purge gas inlet row 90t of the shower head 520 during the third moving step, and

(11) exhausting the reaction precursor and the purge gas through the at least one exhaust row 92a-92d of the shower head 520 during the third moving step.

The shower head 120 described with reference to FIG. 11 may have at least one purge gas injection hole surface 120n as shown in FIG. 23. FIG. 23 is a bottom view of the shower head 120x having the purge gas injection hole surface 120n. The purge gas injection hole surface 120n may be provided on the injection hole surface 120a and may be provided to be parallel to the first direction that is the moving direction of the shower head 120x and extend from one end of the injection hole surface 120a to the opposite end. The raw material precursor and the reaction precursor injection port are not provided on the purge gas injection port surface 120n, and only the purge gas injection port 90x is provided. An exhaust port 92x may also be provided. The rows of exhaust ports 92x may be arranged along an edge parallel to the first direction of the purge gas injection surface 120n. A row of purge gas nozzles 90x may be disposed between the rows of exhaust ports 92x.

Since the raw material and the reaction precursor are not injected on the substrate 50 corresponding to the lower portion of the purge gas injection hole surface 120n, atomic layer deposition does not occur. If there is a portion (50a, not shown in FIG. 23) where the atomic layer thin film is not desired to be deposited on the substrate 50 (not shown in FIG. 23), the purge gas injection hole surface 120n may be moved to the portion 50a. The atomic layer may be prevented from being deposited on the portion 50a by being disposed on the injection hole surface 120a so as to be aligned with each other.

According to one embodiment, the purge gas injection port surface 120n may be configured to not inject any gas by not including the purge gas injection port 90x and the exhaust port 92x.

According to one embodiment, the purge gas injection port surface 120n may be configured to include only the exhaust port 92x.

The width, position and number of the purge gas injection hole surface 120n may be adjusted according to the shape and arrangement of the portion 50a.

Referring back to FIG. 23, according to one embodiment, a method of depositing an atomic layer using a shower head 120x includes the following steps.

(1) a first moving step of moving the shower head 120x from the first position 70 to the second position 72 along the first direction,

(2) The raw material precursor injection holes of the injection units SU until the shower head 120x leaves the first position 70 and reaches the third position 74 while the first movement step is in progress. Injection of the precursor precursor through the heat 80a and the injection of the reactant precursor through the reaction precursor injection column 80b are blocked, and the second position (from the time when the shower head 120x passes the third position 74) Until it reaches 72, the supply of the reaction precursor through the reaction precursor injection column 80b of the injection units SU is continuously blocked, but the raw material precursor is injected onto the substrate 50 through the raw precursor injection column 80a. Spraying on,

(3) injecting purge gas onto the substrate 50 through at least one purge gas injection row 90s and 90t of the injection units SU during the first moving step,

(4) exhausting the source precursor and the purge gas through at least one of the exhaust port rows 92a-92d of the injection units SU during the first moving step,

(5) a second moving step of moving the shower head 120x from the second position 72 to the first position 70,

(6) The raw material precursor injection holes of the injection units SU until the shower head 120x leaves the second position 72 and reaches the fourth position 76 during the second movement step. Injection of the precursor precursor through the heat 80a and the injection of the reactant precursor through the reaction precursor injection column 80b are blocked, and at the first position from the time when the shower head 120x passes the fourth position 76. Until reaching, the supply of the raw material precursor through the raw material precursor injection row 80a of the injection units SU is continuously blocked, but the reaction precursor is injected onto the substrate 50 through the reaction precursor injection row 80b. step,

(7) injecting purge gas onto the substrate 50 through at least one purge gas injection row 90s and 90t of the injection units SU during the second moving step, and

(8) exhausting the reaction precursor and the purge gas through at least one exhaust port row 92a-92d of the injection units SU during the second moving step.

In the above embodiment, the atomic layer is formed on the substrate 50 only when the shower head 120x is located between the third position 74 and the fourth position 76, and the shower head 120x is formed in the first position. It is not formed when located between the position 70 and the third position 74, or between the second position 72 and the fourth position 76. This is because both the raw material precursor and the reaction precursor are required to form the atomic layer.

In the above embodiment, the third position 72 may be disposed between the first position 70 and the second position 72, and may be disposed closer to the first position 70. The first position 70 and the third position 74 may coincide.

In the above embodiment, the fourth position 76 may be disposed between the first position 70 and the second position 72, and may be disposed closer to the second position 72. The second position 72 and the fourth position 76 may coincide.

In the above embodiment, the moving distance of the shower head 120x, i.e., the distance between the first position 70 and the second position 72, is the distance X between the first material injection nozzle rows 80a adjacent to each other. ), Or by disposing the raw material precursor and the reaction precursor only to a part of the substrate surface rather than the disposition interval X of the injection units SU.

In the above embodiment, the raw material precursor and the reaction precursor are not injected through the purge gas injection hole surface 120n, and the purge gas may be injected.

In the above embodiment, the raw material precursor and the reaction precursor are not injected through the purge gas injection hole surface 120n, and only exhaust may be performed.

In the above embodiment, the raw material precursor and the reaction precursor are not injected through the purge gas injection hole surface 120n, and only purge gas injection and exhaust may be performed.

Referring to FIG. 24, the shape of an atomic layer that can be deposited on the substrate 50 by the shower head 120x shown in FIG. 23 is described. 24 is a plan view of the substrate 50.

On the substrate 50, the first atomic layer regions 210 (1) deposited by SU 1, the first spray unit of the shower head 120x, and the second deposited by SU 2, the second spray unit. Atomic layer regions 210 (2),... N-1 atomic layer regions 210 (n-1) deposited by SU (n-1) which is the n-1th injection unit SU, which is the nth injection unit SU The nth atomic layer regions 210 (n) deposited by (n) are formed. For example, when the shower head 120x includes only the first spray unit SU 1, only the first atomic layer region 201 (1) is formed on the substrate 50.

The width 240 in the first direction of the atomic layer regions 210 is determined by the spacing between the third position 74 and the fourth position 76 described with reference to FIG. 23. The atomic layer regions 210 are separated from each other, and the isolation 220 in a direction parallel to the first direction, which is the movement direction of the substrate 50, may be expanded according to the embodiment described with reference to FIG. 23. Isolation implemented by the method, isolation 230 in a direction perpendicular to the first direction is isolation implemented by purge gas jet surface 120n of shower head 120x. Isolation 220 in a direction parallel to the first direction is isolation adjustable by varying the distance between the third position 74 and the fourth position 76, and isolation in a direction perpendicular to the first direction ( 230 is isolation that is adjustable by changing the width, configuration or shape of the purge gas jet surface 120n of the shower head 120x. As such, according to an exemplary embodiment of the present invention, it is possible to selectively deposit an atomic layer only on a specific region on the substrate 50 without a separate shadow mask.

Although the present invention has been described with reference to specific embodiments, the present invention is not limited to the specific embodiments described above, and the present invention is also effectively applied to modified embodiments in accordance with the spirit of the present invention.

Claims (66)

1. A substrate support configured to support a substrate;

   A shower head having a first material injection hole, a second material injection hole, a purge gas injection hole, and an exhaust hole and including an injection hole surface disposed adjacent to the substrate;

   A moving device configured to reciprocate between the substrate support or the shower head between first and second positions along a first direction; And

   A first material sprayed onto the substrate through the first material spray hole, a second material sprayed onto the substrate through the second material spray hole, a purge gas sprayed onto the substrate through the purge gas spray hole, and And a control device configured to control supply and interruption of exhaust provided on the substrate through the exhaust port.

   The control device is configured to not simultaneously supply the first material and the second material onto the substrate, and supply the first material onto the substrate through the first material injection hole or through the second material injection hole. And simultaneously supply the purge gas and the exhaust onto the substrate while supplying the second material onto the substrate.
2. The method of claim 1,

   And a purge gas injection port row disposed on the injection hole surface to surround the injection hole surface along an edge of the injection hole surface and configured to inject the purge gas to the periphery of the substrate placed on the substrate support. Atomic layer deposition apparatus.
3. The method of claim 1,

   And an edge bottom surface disposed to surround the injection hole surface along an edge of the injection hole surface and protruding from the injection hole surface.
4. The method of claim 3, wherein

   And a purge gas nozzle row arranged on the edge bottom surface and configured to inject the purge gas into the periphery of the substrate placed on the substrate support.
5. The method of claim 1,

   The substrate support may include a first region on which the substrate is placed and a second region surrounding the first region and covered by the shower head, wherein the second region is provided such that exhaust ports surround the first region. Atomic layer deposition apparatus characterized by the above-mentioned.
6. The method of claim 1,

   The substrate support may include a first region on which the substrate is placed and a second region surrounding the first region and covered by the shower head, wherein the second region is provided with purge gas injection holes. Deposition apparatus.
7. The method of claim 1,

   The substrate support includes a first region covered by the shower head and a second region surrounding the first region and not covered by the shower head, wherein the substrate region is arranged to surround the first region. An atomic layer deposition apparatus characterized in that the exhaust port is provided.
8. The method of claim 1,

   The injection hole surface comprises at least one injection unit disposed along the first direction, the at least one injection unit extending in a direction perpendicular to the first direction, each injection unit having a first material injection hole And a column, a second material nozzle row, and at least one exhaust row.
9. The method of claim 8,

   And the at least one injection unit comprises a first purge gas injection row.
10. The method of claim 9,

    And wherein the first purge gas jet row is disposed between the first material jet row and the second material jet row.
11. The method of claim 8,

    The at least one exhaust outlet row includes a first exhaust outlet row and a second exhaust outlet row, wherein the first material outlet row is disposed between the first exhaust outlet row and the second exhaust outlet row, and the second material outlet row is And disposed between the first material injection port row and the second exhaust port row.
12. The method of claim 11, wherein

    And wherein the first material is exhausted through the first exhaust port row and the second material is exhausted through the second exhaust port row.
13. The method of claim 11, wherein

    And the at least one injection unit comprises a first purge gas injection row.
14. The method of claim 13,

    And wherein the first purge gas jet row is disposed between the first material jet row and the second material jet row.
15. The method of claim 14,

    And a third exhaust port row disposed between the first material injection port row and the first purge gas injection row, and a fourth exhaust row arranged between the second material injection port row and the first purge gas injection row. Atomic layer deposition apparatus.
16. The method of claim 15,

    And wherein the first material is exhausted through the first and third exhaust port rows, and the second material is configured to exhaust through the second and fourth exhaust port rows.
17. The method of claim 15,

    A purge gas nozzle row disposed between the first exhaust port row and the first material injection row row, a purge gas injection row row disposed between the first material injection port row and the third exhaust port row, the fourth exhaust row and the second material injection port. And a purge gas nozzle row disposed between the rows, and a purge gas nozzle row disposed between the second material nozzle row and the second exhaust port row.
18. The method of claim 8,

    And a purge gas nozzle row disposed between the at least one injection unit.
19. The method of claim 1,

    A shower head support configured to support the shower head, wherein the moving device includes a guide block fixed to the shower head and a track fixed to the shower head support, the guide block being reciprocally movable to the track. An atomic layer deposition apparatus, characterized in that fastened to.
20. The method of claim 1,

    A shower head support configured to support the shower head, wherein the moving device includes a rotor of the linear motor fixed to the shower head and a stator of the linear motor fixed to the shower head support, The atomic layer deposition apparatus is configured to be reciprocating relative to the stator.
21. The method of claim 1,

    And a shower head support configured to support the shower head, and installed in a space between the shower head support and the shower head and configured to spray clean air or inert gas toward the shower head and the substrate support. An atomic layer deposition apparatus comprising a.
22. The method of claim 1,

    A shower head support configured to support the shower head, the shower head support being fixed to the shower head support, including an opening, and accessing the shower head and the substrate support through the opening to access the shower head and the substrate support. An atomic layer deposition apparatus comprising a first chamber configured to surround.
23. The method of claim 22,

    And an exhaust port disposed around the substrate support, wherein the sidewall of the first chamber is configured to be positioned near the exhaust port.
24. The method of claim 23, wherein

    And the sidewalls of the chamber are located in the exhaust vents.
25. The method of claim 22,

    And a second chamber configured to isolate the outside of the shower head support, the shower head, the substrate support, and the exhaust port disposed around the substrate support.
26. The method of claim 1,

    A first frame, a second frame, one end is fixed to the first frame and the opposite end is a shaft fixed to the second frame, the shower is fastened so as to move to the shaft and configured to support the shower head And a moving device configured to move a head support and the shower head support between the first frame and the second frame.
27. The method of claim 8,

    The at least one injection unit is arranged at equal intervals X along the first direction, and the first material injection port rows of the injection unit are arranged at a distance X1 away from the second material injection port row. Atomic layer deposition apparatus characterized by the above-mentioned.
28. The method of claim 27,

    The at least one spray unit includes a first spray unit disposed at a first end of the spray hole surface and a second spray unit disposed at an opposite end of the first end, wherein the shower head is placed in the first position. When the first end of the substrate placed on the substrate support is the first material injection port row of the first injection unit 80b and the first material injection port row of the third injection unit disposed adjacent to the first injection unit ( And a second end of the substrate opposite the first end of the substrate is formed from the second material jet row 80b and the second material jet row 80b of the second injection unit. Between the points spaced apart by a distance of X-X1 in a first direction, and when the shower head is in the second position, the first end of the substrate is formed by the first material jet row of the first spraying unit ( 80a) and the first water Between the points of the vaginal injection port 80a in the reverse direction of the first direction by a distance of X-X1, the second end of the substrate being connected to the first material injection port row 80a of the second injection unit; And the second material injection port row (80b) of the fourth injection unit disposed adjacent to the second injection unit.
29. The method of claim 28,

    When the shower head is in the first position, the first end of the substrate is positioned in alignment with the second material ejection outlet row 80b of the first spray unit, and the second end of the substrate Positioned at a point separated by the distance of X-X1 in the first direction from the second material injection port row 80b of the second spraying unit, when the shower head is in the second position; A first end is aligned at a point away from the first material injection port row 80a of the first injection unit by a distance of X-X1 in the reverse direction of the first direction, and the second end of the substrate 2 Atomic layer deposition apparatus, characterized in that located in alignment with the first material injection port row (80a) of the injection unit.
30. The method of claim 28,

    And the fourth spraying unit is the third spraying unit.
31. The method of claim 28,

    And the third spraying unit is the second spraying unit, and the fourth spraying unit is the first spraying unit.
32. The method of claim 27,

    The at least one spraying unit includes a first spraying unit disposed at a first end of the spray hole face and a second spraying unit disposed at an opposite end of the first end, wherein the shower head is connected to the second spraying unit. And a first material spraying unit disposed adjacent to each other, wherein the first material spraying unit is spaced apart from the first material spraying row 80a of the second spraying unit by a predetermined distance X in the first direction. And a plurality of first material ejection outlet rows and exhaust outlet rows arranged before and after the first material ejection outlet rows.
33. 33. The method of claim 32,

    When the shower head is in the first position, the first end of the substrate placed on the substrate support is disposed adjacent to the second material injection port row 80b of the first injection unit and the first injection unit. 3 The second end of the substrate, located between the first material injection port rows 80a of the injection unit, opposite the first end of the substrate, is the first material injection row 80a of the first material injection unit. And a point spaced apart from the first material ejection port row 80a of the first material ejection unit by a distance X1 along the first direction, and the substrate when the shower head is in the second position. The first end of is located between a first material injection column row 80a of the first injection unit and a point away from the first material injection row row 80a by a distance of X-X1 in the reverse direction of the first direction; On the substrate The second end is an atomic layer deposition apparatus being configured to be positioned between the first material injection hole column (80a) and the second material injection hole column (80b) of the second injection unit of the second injection unit.
34. The method of claim 33, wherein

    When the shower head is in the first position, the first end of the substrate is positioned in alignment with the second material jet row 80b of the first spraying unit, and the second end of the substrate is located in the first position. Located at a point away from the first material injection port row 80a of the material injection unit by a distance of X1 along the first direction, and the first head of the substrate when the shower head is in the second position. The end is aligned at a point away from the first material injection port row 80a of the first injection unit by a distance of X-X1 in the reverse direction of the first direction, and the second end of the substrate is An atomic layer deposition apparatus, characterized in that located in alignment with the second material injection port row (80b) of the injection unit.
35. The method of claim 33, wherein

    And the third spraying unit is the second spraying unit.
36. The method of claim 33, wherein

    And the third spraying unit is the first spraying unit, and the second spraying unit is the first spraying unit.
37. Placing the substrate on a substrate support;

    A first material ejection port configured to eject a first material, a second material ejection port configured to eject a second material configured to react with the first material to form an atomic layer, and a purge gas ejection port configured to eject a purge gas And positioning a shower head adjacent to the substrate, the shower head including an injection hole surface having an exhaust port connected to the exhaust;

    A first moving step of moving the substrate support or the shower head from a first position to a second position along a first direction;

    During the first movement step, the second material is not sprayed, the first material is sprayed onto the substrate through the first material spray hole, and at the same time, the second material is sprayed onto the substrate through the purge gas spray hole. Spraying a purge gas and simultaneously exhausting the first material and the purge gas through the exhaust port;

    A second moving step of moving the substrate support or the shower head along the reverse direction of the first direction from the second position to the first position; And

    During the second movement step, the first material is not sprayed, the second material is sprayed onto the substrate through the second material spray hole, and at the same time, the second material is sprayed onto the substrate through the purge gas spray hole. Spraying a purge gas and simultaneously exhausting the second material and the purge gas through the exhaust port;

    Atomic layer deposition method comprising a.
38. The method of claim 37,

    The injection port surface includes at least one injection unit disposed along the first direction, the at least one injection unit extending in a direction perpendicular to the first direction, each injection unit being the first material. A first material nozzle row configured to inject a second material, a second material nozzle row configured to inject the second material, a purge gas nozzle row configured to inject the purge gas and at least one exhaust row; Atomic layer deposition method.
39. The method of claim 38, wherein

    Wherein the spacing between the first position and the second position is similar to the spacing between the first material ejection openings of the ejection units disposed adjacent to each other along the first direction.
40. The method of claim 38, wherein

    Wherein the spacing between the first position and the second position is smaller than the spacing between the first material ejection openings of the spray units disposed adjacent to each other along the first direction.
41. The method of claim 37,

    In the first moving step, the first material and the second material are not sprayed while the shower head is moved from the first position to the third position, and while the shower head is moved from the third position to the second position. A method of depositing an atomic layer, wherein the second material is not sprayed but the first material is sprayed.
42. 42. The method of claim 41 wherein

    And wherein the third position is between the first position and the second position and is closer to or in the first position.
43. The method of claim 37,

    In the second moving step, the first material and the second material are not sprayed while the shower head is moved from the second position to the fourth position, and the moving head is moved from the fourth position to the first position. The first layer is not sprayed, but the atomic layer deposition method characterized in that for spraying the second material.
44. 44. The method of claim 43,

    And wherein the fourth position is between the first position and the second position and is closer to or in the second position.
45. The method of claim 37,

    And wherein the first material exhausts through a first exhaust port of the exhaust port, and the second material exhausts through a second exhaust port of the exhaust port.
46. The method of claim 37,

    The purge gas is injected through the second material injection hole during the first moving step, and the purge gas is injected through the first material injection hole during the second moving step. Layer deposition method.
47. The method of claim 37,

    And a moving speed of the substrate support or the shower head in the first moving step and a moving speed of the substrate support or the shower head in the second moving step are different.
48. The method of claim 37,

    After the first moving step is completed and before the second moving step is started, the injection of the first material and the second material is blocked, and a first purge step of injecting and evacuating only the purge gas is added. Atomic layer deposition method.
49. 49. The method of claim 48 wherein

    After the second moving step is completed and before the first moving step is started again, the injection of the first material and the second material is blocked, and a second purge step of injecting and evacuating only the purge gas is added. Atomic layer vapor deposition method.
50. The method of claim 49,

    And the purge times added in the first and second purge steps are different.
51. Placing the substrate on a substrate support;

    A first material ejection port configured to eject a first material, a second material ejection port configured to eject a second material configured to react with the first material to form an atomic layer, and a purge gas ejection port configured to eject a purge gas Positioning a shower head on the substrate, the shower head including an injection hole surface having an exhaust port connected to the exhaust;

    A first moving step of moving the substrate support or the shower head from a first position to a second position along a first direction;

    During the first movement step, the second material is not sprayed, the first material is sprayed onto the substrate through the first material spray hole, and at the same time, the second material is sprayed onto the substrate through the purge gas spray hole. Spraying a purge gas and simultaneously exhausting the first material and the purge gas through the exhaust port;

    A second moving step of moving the substrate support or the shower head along the reverse direction of the first direction from the second position to the first position;

    Injecting the purge gas onto the substrate through the purge gas injection port without spraying the first and second materials during the second movement step; And

    A third moving step of moving the substrate support or the shower head from the first position to the second position along the first direction;

    During the third movement step, the first material is not sprayed, the second material is sprayed onto the substrate through the second material spray hole, and at the same time, the second material is sprayed onto the substrate through the purge gas spray hole. Spraying a purge gas and simultaneously exhausting the second material and the purge gas through the exhaust port;

    Atomic layer deposition method comprising a.
52. The method of claim 51, wherein

    The injection port surface includes at least one injection unit disposed along the first direction, the at least one injection unit extending in a direction perpendicular to the first direction, each injection unit being the first material. And a first material nozzle row configured to inject a second material, a second material nozzle row configured to inject the second material, a purge gas nozzle row configured to inject the purge gas and at least one exhaust row. Atomic layer deposition method.
53. The method of claim 52, wherein

    Wherein the spacing between the first position and the second position is similar to the spacing between the first material ejection openings of the ejection units disposed adjacent to each other along the first direction.
54. The method of claim 52, wherein

    Wherein the spacing between the first position and the second position is smaller than the spacing between the first material ejection openings of the ejection units disposed adjacent to each other along the first direction.
55. The method of claim 51, wherein

    And the moving speeds of the substrate support or the shower head in the first moving step, the second moving step, and the third moving step are different from each other.
56. The method of claim 51, wherein

    And wherein the first material exhausts through a first exhaust port of the exhaust port, and the second material exhausts through a second exhaust port of the exhaust port.
57. The method of claim 51, wherein

    The purge gas is injected through the second material injection hole during the first moving step, and the purge gas is injected through the first material injection hole during the third moving step. Layer deposition method.
58. The method of claim 51, wherein

    And exhausting said purge gas through said exhaust port during said second movement step.
59. The method of claim 51, wherein

    And purge gas is injected through the first material injection hole and the second material injection hole during the second movement step.
60. The method of claim 1,

    The substrate is circular, and both ends of the injection hole surface is an atomic layer deposition apparatus, characterized in that the shape of an arc.
61. The method of claim 1,

    The moving device is configured to rotate the shower head between a first angular position and a second angular position about a first axis, the first angular position being the first position and the second angular position being the Atomic layer deposition apparatus, characterized in that the second position.
62. 62. The method of claim 61,

    And the shower head comprises one spraying unit.
63. The method of claim 1,

    The injection hole surface further comprises a purge gas injection surface, the purge gas injection surface is disposed along the first moving direction of the shower head, the purge gas injection surface is not provided with the first and second material injection port. Atomic layer deposition apparatus.
64. The method of claim 63, wherein

    The purge gas injection port surface comprises a purge gas injection port, characterized in that the atomic layer deposition apparatus.
65. The method of claim 63, wherein

    And the exhaust port has an exhaust port, and the exhaust port is disposed at an edge of the purge gas jet surface along the first direction.
66. The method of claim 63, wherein

    And the purge gas injection port surface does not include a purge gas injection port and an exhaust port.

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