WO2019132175A1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using same - Google Patents

Abstract

An epoxy resin composition for encapsulating a semiconductor device, of the present invention, comprises an epoxy resin, a curing agent, inorganic filler and an explosion preventer, wherein the inorganic filler comprises a first inorganic filler including barium-titanium-yttrium oxide represented by chemical formula 1.

Description

EPOXY RESIN COMPOSITION FOR SEALING SEMICONDUCTOR DEVICE AND SEPARATED SEMICONDUCTOR DEVICE

TECHNICAL FIELD The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed by using the same.

A method for sealing a semiconductor element with an epoxy resin composition has been widely used for the purpose of protecting the semiconductor element from external environment such as moisture or mechanical impact.

Application fields of semiconductor devices have been diversified, and in recent years, demand for semiconductor devices requiring a high relative dielectric constant is rapidly increasing.

Among the biometric chips for security of mobile devices and automobiles, fingerprint recognition is rapidly spreading due to low cost and recognition convenience. Particularly, studies on capacitance type are rapidly progressing. The electrostatic capacity type is recognized as the difference in the capacitance of the fingerprint irregularity when recognizing the fingerprint, and the application from mobile to automobile and credit card is accelerated.

In order to increase the relative dielectric constant of a semiconductor device, a technique using sapphire glass having a high dielectric constant has been proposed. However, since the sapphire glass is assembled through a bonding process or the like, productivity is low and cost is high.

As another method of increasing the relative dielectric constant of a semiconductor device, there has been proposed a technique of increasing the relative dielectric constant by using spherical alumina in an epoxy resin composition for sealing a semiconductor device. However, as the filling rate of alumina is higher, the flowability is lowered, There was a problem.

As another method, there has been proposed a technique of applying barium · titanate to an epoxy resin composition for sealing a semiconductor device, but this method has problems in terms of stability and reliability, such as explosion possibility due to friction with air.

Therefore, development of an epoxy resin composition for sealing a semiconductor device which not only has a high dielectric constant but also has high stability and reliability is required.

An object of the present invention is to provide an epoxy resin composition for sealing a semiconductor device which has a high relative dielectric constant and no risk of explosion due to a high relative dielectric constant, and a semiconductor device sealed by using the epoxy resin composition.

It is still another object of the present invention to provide an epoxy resin composition for semiconductor device encapsulation excellent in fingerprint recognition rate and a semiconductor device sealed using the composition.

The above and other objects of the present invention can be achieved by the present invention described below.

One aspect of the present invention relates to an epoxy resin composition for sealing a semiconductor device.

In one embodiment, the epoxy resin composition for encapsulating semiconductor devices comprises an epoxy resin, a curing agent, an inorganic filler, and an explosion-proofing agent, wherein the inorganic filler is a first inorganic material comprising a barium-titanium- And fillers.

[Chemical Formula 1]

BaTi _a Y _b O _4.5

(Wherein a is 0.1 to 2 and b is 1 to 3).

The barium-titanium-yttrium oxide may have a weight ratio of barium (Ba) and yttrium (Y) of about 0.3: 1 to about 1.5: 1.

The barium-titanium-yttrium oxide may have a weight ratio of titanium (Ti) to yttrium (Y) of about 0.01: 1 to about 0.5: 1.

The explosion-proofing agent may include triphenylphosphine oxide.

In another embodiment, the first inorganic filler may further comprise at least one of zirconium oxide (ZrO ₂ ), magnesium oxide (MgO), and manganese carbonate (MnCO ₃ ).

The first inorganic filler may comprise from about 0.1 to about 100 weight percent barium-titanium-yttrium oxide.

The first inorganic filler may be coated with the explosion-proofing agent in advance before the preparation of the epoxy resin composition.

In yet another embodiment, the inorganic filler may further comprise a second inorganic filler.

The first inorganic filler may be from about 0.1 to about 100 weight percent of the inorganic filler.

The epoxy resin composition may have a ratio of the first inorganic filler to the second inorganic filler of about 0.05: 1 to about 50: 1.

The epoxy resin composition may include about 0.5 to about 20 weight percent epoxy resin, about 0.1 to about 13 weight percent of a curing agent, about 50 to about 98 weight percent of an inorganic filler, and about 0.1 to about 20 weight percent of an explosion inhibitor.

The epoxy resin composition comprises about 0.5 to about 15 weight percent of an epoxy resin, about 0.1 to about 10 weight percent of a curing agent, about 50 to about 98 weight percent of a first inorganic filler, about 0.1 to about 40 weight percent of a second inorganic filler, About 0.1% to about 15% by weight.

The epoxy resin may include at least one of a biphenyl type epoxy resin and a phenol aralkyl type epoxy resin.

The epoxy resin composition may have a relative dielectric constant of about 20 or more at a temperature of 25 DEG C and a frequency of 1.0 GHz after curing.

The epoxy resin composition may have a fingerprint recognition rate of about 90% or more and a discharge start time due to high frequency of about 3 seconds or more in a touch-based fingerprint recognition rate evaluation method using capacitance after curing.

Another aspect of the present invention relates to a semiconductor device.

In an embodiment, the semiconductor element may be sealed using the epoxy resin composition for semiconductor encapsulation.

The present invention relates to an epoxy resin composition for sealing a semiconductor device having a high relative dielectric constant and a low relative dielectric constant variation with temperature, a high thermal conductivity, a low moisture absorption rate and a high fingerprint recognition rate, .

Hereinafter, the present invention will be described in more detail.

In the following description of the present invention, detailed description of known related arts will be omitted when it is determined that the gist of the present invention may be unnecessarily obscured by the present invention.

In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

Also, in interpreting the constituent elements, even if there is no separate description, it is interpreted as including the error range.

In the present specification, 'X to Y' representing the range means 'X or more and Y or less'.

In this specification, the 'fingerprint recognition rate evaluation method' is a method in which a total of 120 capacitive FBGA packages are manufactured and five fingerprint recognition tests are performed for each package, ).

The epoxy resin composition for semiconductor device encapsulation of the present invention comprises an epoxy resin, a curing agent, an inorganic filler and an explosion-proofing agent, wherein the inorganic filler comprises a first inorganic filler comprising barium-titanium-yttrium oxide represented by the following formula do.

[Chemical Formula 1]

BaTi _a Y _b O _4.5

In the above formula (1), a is 0.1 to 2, and b is 1 to 3.

Hereinafter, each component of the epoxy resin composition of the present invention will be described in detail.

(A) an epoxy resin

And is not particularly limited as long as it is an epoxy resin generally used for sealing semiconductor devices. In an embodiment, the epoxy resin may be an epoxy compound containing two or more epoxy groups in the molecule. Examples of the epoxy resin include an epoxy resin obtained by epoxidizing a condensate of phenol or alkyl phenol and hydroxybenzaldehyde, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a multifunctional epoxy resin, a naphthol novolak Novolak type epoxy resins such as bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl type epoxy resin, dicyclopentadiene type epoxy resin, etc. . More specifically, the epoxy resin may be a phenol aralkyl type epoxy resin, a biphenyl type epoxy resin or a mixture thereof.

The phenol aralkyl type epoxy resin may be, for example, a phenol aralkyl type epoxy resin having a novolak structure including a biphenyl derivative represented by the following formula (2).

(2)

In Formula 2, the average value of b is 1 to 7.

The biphenyl type epoxy resin may be, for example, a biphenyl type epoxy resin represented by the following formula (3).

(3)

In formula (3), R ₈ , R ₉ , R ₁₀ , R ₁₁ , R ₁₂ , R ₁₃ , R ₁₄ and R ₁₅ are each independently an alkyl group having 1 to 4 carbon atoms, and the average value of c is 0 to 7.

The epoxy resin may be about 0.5 to about 20% by weight, specifically about 1 to about 15% by weight, more specifically about 3 to about 12% by weight, of the epoxy resin composition for encapsulating semiconductor devices.

(B) Curing agent

As the curing agent, curing agents generally used for sealing semiconductor devices may be used without limitation, for example, a curing agent having two or more reactors may be used.

Specific examples of the curing agent include phenol aralkyl type phenol resin, phenol novolak type phenol resin, xylok type phenol resin, cresol novolak type phenol resin, naphthol type phenol resin, terpene type phenol resin, Phenolic resin, dicyclopentadiene-based phenol resin, novolak-type phenol resin synthesized from bisphenol A and resole, polyhydric phenol compound including tris (hydroxyphenyl) methane, dihydroxybiphenyl, maleic anhydride and phthalic anhydride, , Aromatic amines such as methanophenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone, but are not limited thereto.

For example, the curing agent may include at least one of a phenol novolak type phenol resin, a phenol aralkyl type phenol resin, and a multifunctional phenol resin.

The phenol novolak type phenolic resin may be, for example, a phenol novolak type phenolic resin represented by the following formula (4).

[Chemical Formula 4]

In formula (4), the average value of d is 1 to 7.

The phenol novolak type phenol resin represented by the above formula (4) has a short crosslinking point interval, and when it reacts with an epoxy resin, the crosslinking density becomes high to increase the glass transition temperature of the cured product, The warping of the package can be suppressed more effectively.

The phenol aralkyl type phenol resin may be, for example, a phenol aralkyl type phenolic resin having a novolak structure including a biphenyl derivative in a molecule represented by the following formula (5).

[Chemical Formula 5]

In Formula 5, the average value of e is 1 to 7.

The phenol aralkyl type phenol resin represented by the above formula (5) reacts with an epoxy resin to form a carbon layer (char) to block the transfer of heat and oxygen to the periphery, thereby achieving flame retardancy.

The multifunctional phenol resin may be, for example, a multifunctional phenol resin containing a repeating unit represented by the following formula (6).

[Chemical Formula 6]

The average value of g in the above formula (6) is 1 to 7.

The multifunctional phenol resin containing the repeating unit represented by the above formula (6) may be preferable in terms of reinforcing the high temperature bending property of the epoxy resin composition.

These curing agents may be used alone or in combination. Further, it can be used as an additional compound prepared by subjecting the above curing agent to a linear reaction such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, a stress relieving agent and the like and a melt master batch.

The curing agent may be included in the epoxy resin composition for encapsulating semiconductor devices in an amount of about 0.1 to about 13 wt%, for example, about 0.1 to about 10 wt%, or about 0.1 to about 8 wt%.

The mixing ratio of the epoxy resin and the curing agent can be adjusted in accordance with the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be from about 0.95 to about 3, and specifically from about 1 to about 2, more specifically from about 1 to about 1.75. When the compounding ratio of the epoxy resin and the curing agent is in the above range, excellent strength can be realized after curing the epoxy resin composition.

(C) Inorganic filler

In the present invention, the inorganic filler of one embodiment includes a first inorganic filler comprising barium-titanium-yttrium oxide represented by the following formula (1).

[Chemical Formula 1]

BaTi _a Y _b O _4.5

In the above formula (1), a is 0.1 to 2, and b is 1 to 3.

In Formula 1, a may be 0.5 to 1.5, specifically 0.8 to 1.2, and b may be 1.5 to 2.5, specifically 1.8 to 2.2.

The barium-titanium-yttrium oxide represented by the above formula (1) has a higher dielectric constant than that of the conventional epoxy resin composition for semiconductor encapsulation, which is advantageous in that the fingerprint recognition rate of a semiconductor device can be increased.

The barium-titanium-yttrium oxide may comprise about 30 to about 50 wt.%, Specifically about 35 to about 45 wt.% Yttrium (Y). In the above range, the epoxy resin composition not only has a high dielectric constant but also a small change in relative dielectric constant with temperature, so that the semiconductor device using the epoxy resin composition can have high stability and reliability.

The barium-titanium-yttrium oxide may have a weight ratio of barium (Ba) and yttrium (Y) of about 0.3: 1 to about 1.5: 1, specifically about 0.5: 1 to about 1: 1. Wherein the barium-titanium-yttrium oxide has a weight ratio of titanium (Ti) to yttrium (Y) of from about 0.01: 1 to about 1.2: 1, from about 0.01: 1 to about 1: 1, Specifically about 0.1: 1 to about 0.4: 1. In the above range, the epoxy resin composition may have an advantage of not only a high dielectric constant but also a small change in relative dielectric constant depending on the temperature.

The barium-titanium-yttrium oxide may have a particle size of from about 0.1 to about 150 microns, such as from about 0.1 to about 100 microns, from about 0.1 to about 50 microns, from about 0.1 to about 10 microns, And the barium-titanium-yttrium oxide has a specific surface area of about 0.01 to about 15 m ² / g, specifically about 1 to about 10 m ² / g, more specifically about 1 to about 5 m ² / g . The barium-titanium-yttrium oxide may also have a density of about 3 to about 9 g / m ³ , specifically about 4 to about 8 g / m ³ , more specifically about 5 to about 7 g / m ³ . In the above-mentioned range, the epoxy resin composition may have an advantage that the relative dielectric constant is excellent and the variation of the relative dielectric constant with temperature is small.

The first inorganic filler may be coated with the explosion-proofing agent in advance before the preparation of the epoxy resin composition.

The first inorganic filler may comprise about 0.1 to about 100 wt.%, Specifically about 30 to about 99 wt.%, More specifically about 40 to about 98 wt.% Of the barium-titanium-yttrium oxide.

In another embodiment, the first inorganic filler may further comprise at least one of zirconium oxide (ZrO ₂ ), magnesium oxide (MgO), and manganese carbonate (MnCO ₃ ).

In this case, the first inorganic filler may be a mixture of zirconium oxide (ZrO ₂ ), magnesium oxide (MgO), manganese carbonate (MnCO ₃ ) and barium-titanium-yttrium oxide.

The first inorganic filler is present in an amount of from about 10 to about 100 weight percent, specifically from about 20 to about 97 weight percent, more specifically, at least about 40 weight percent, at least about 50 weight percent, at least about 60 weight percent, 70 wt% or more, or about 80 wt% or more, and about 95 wt% or less. In the above range, the balance between the fluidity, the relative dielectric constant and the rate of change of the relative dielectric constant can be excellent.

The epoxy resin composition according to the present invention may further comprise a second inorganic filler depending on required properties. The second inorganic filler is intended to improve the mechanical properties, low stress and heat radiation effect of the epoxy resin composition.

The second inorganic filler may mean different from the first inorganic filler (barium-titanium-yttrium oxide, zirconium oxide (ZrO ₂ ), magnesium oxide (MgO), and manganese carbonate (MnCO ₃ ) Wherein the second inorganic filler is selected from the group consisting of silicon (Si) and aluminum (Al) containing nanomaterials, alumina, fused silica, crystalline silica, boron nitride, ferrite, calcium carbonate, magnesium carbonate, magnesia, clay, talc, , Calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. These may be used alone or in combination.

The silicon (Si) and aluminum (Al) containing nanomaterials may have an average particle size of from about 10 nm to about 500 nm, specifically from about 20 nm to about 450 nm, more specifically from about 20 nm to about 400 nm. The heat radiation effect and flexural strength of the epoxy resin composition can be enhanced without lowering the flowability in the above range.

The alumina may have a thermal conductivity of about 15 W / mK to about 40 W / mK, specifically about 20 W / mK to about 30 W / mK, more specifically about 25 W / mK to about 30 W / mK. In the above range, the epoxy resin composition may be excellent in heat radiation.

The shape and particle size of alumina are not particularly limited, but spherical alumina having an average particle diameter of about 0.1 탆 to about 50 탆, specifically about 0.5 탆 to about 30 탆, can be applied. In the above range, the flowability of the epoxy resin composition in the semiconductor encapsulation molding may be advantageous.

The alumina can be used by mixing alumina having different average particle diameters. About 40 wt.% To about 95 wt.% Of alumina having an average particle size of greater than about 10 microns and less than about 30 microns, about 4 to about 50 microns of alumina having an average particle size of greater than about 4 microns and less than about 10 microns, % And an alumina mixture comprising from about 1% to about 30% by weight of alumina having an average particle size of at least about 0.1 占 퐉 and at most about 4 占 퐉. In the above range, the epoxy resin composition has excellent heat radiation effect and bending strength, and may be advantageous against thermal shock.

The alumina or alumina mixture may comprise from about 3% to about 70% by weight of the total amount of the first inorganic filler (C-1) and the second inorganic filler (C-2). From about 5 wt.% To about 60 wt.%, From about 7 wt.% To about 40 wt.%, Specifically up to about 30 wt.%, Up to about 20 wt.%. Within the above range, the epoxy resin composition may be excellent in heat resistance, mechanical properties such as bending strength, moldability and the like.

The amount of the first inorganic filler (C-1) and the second inorganic filler (C-2) used varies depending on required properties such as moldability, low stress and high temperature strength. For example, the epoxy resin composition may have a ratio of the first inorganic filler to the second inorganic filler in the range of about 0.05: 1 to about 50: 1, specifically about 0.5: 1 to about 30: 1, , From about 5: 1 to about 20: 1.

In embodiments, the first inorganic filler may comprise from about 50% to about 98%, such as from about 70% to about 98% or from about 80% to about 95% by weight of the resin composition, 2 Inorganic fillers may be present in the resin composition in an amount of from about 0.1 wt% to about 40 wt%, such as from about 0.5 wt% to about 35 wt%, from about 1 wt% to about 20 wt%, or from about 5 wt% to about 15 wt% .

The sum of the first inorganic filler and the second inorganic filler is from about 50% to about 98%, such as from about 70% to about 98% or from about 80% to about 95% by weight of the epoxy resin composition .

Explosion inhibitor

The epoxy resin composition according to the present invention comprises an explosion-proofing agent.

If the epoxy encapsulated encapsulant contains a high relative dielectric constant filler, there is a potential for the filler to explode. In the present invention, since the composition has a high relative dielectric constant and includes an explosion-proofing agent, the possibility of explosion is minimized and safety can be secured when applied to an actual product.

One embodiment of the explosion-proofing agent may comprise triphenylphosphine oxide.

When triphenylphosphine oxide is contained as an explosion-proofing agent, the explosion-proof effect of the composition is ensured, and the relative permittivity can also be excellent.

The explosion-proofing agent may be added to the epoxy resin composition in an amount of about 0.1 to about 20 wt%, specifically about 0.1 wt% to about 15 wt%, about 0.3 wt% to about 15 wt%, about 0.4 wt% to about 10 wt% %, More specifically from about 0.4 wt% to about 8 wt%, from about 0.4 wt% to about 7 wt%, or from about 0.4 wt% to about 6 wt%. In the above range, the explosion-proof performance of the composition can be excellent.

In one embodiment, the inorganic filler treated with an explosion-proofing agent can be used. Even if the inorganic filler has a high relative dielectric constant, it is prevented from explosion and the possibility of explosion of the composition is minimized.

The method for preventing the explosion of the inorganic filler is not particularly limited. For example, it may be carried out by dissolving the explosion-proofing agent in a solvent and then mixing with an inorganic filler to adjust the fraction of the explosion-proofing agent in the inorganic filler.

In a specific example, the first inorganic filler exhibiting a high relative dielectric constant may be subjected to an explosion-proof treatment. Preferably, the first inorganic filler treated with triphenylphosphine oxide may be used. By the above treatment, the first inorganic filler includes triphenylphosphine oxide, and the surface thereof may be coated with triphenylphosphine oxide.

At 100% by weight of the total of the first inorganic filler and the explosion-proofing agent, the explosion-proofing agent may be included at from about 0.1% to about 20%, from about 0.3% to about 10%, and from about 0.4% to about 8% . In the above range, the explosion-proof performance of the composition can be excellent. Also, there may be an effect of exhibiting an excellent relative dielectric constant in the above range.

The degree of explosion-proof performance of the composition according to the present invention can be evaluated by testing the degree of discharge due to high frequency.

In an embodiment, the epoxy resin composition according to the present invention comprises from about 0.5 to about 20 weight percent epoxy resin, from about 0.1 to about 13 weight percent of a curing agent, from about 50 to about 98 weight percent of an inorganic filler, from about 0.1 to about 20 weight percent of an explosion- . ≪ / RTI > From about 0.5 to about 15 weight percent epoxy resin, from about 0.1 to about 10 weight percent curing agent, from about 50 to about 98 weight percent first inorganic filler, from about 0.1 to about 40 weight percent second inorganic filler, 0.1 to about 15% by weight.

In addition to the above components, the epoxy resin composition according to the present invention may further include at least one of a curing accelerator, a coupling agent, a release agent, and a colorant.

Hardening accelerator

The curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. As the curing accelerator, for example, a tertiary amine, an organometallic compound, an organic phosphorus compound, an imidazole, and a boron compound can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt.

Specific examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone adducts and the like. Imidazoles include, but are not limited to, 2-phenyl-4 methylimidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, -Methylimidazole, 2-heptadecylimidazole, and the like, but the present invention is not limited thereto. Specific examples of the boron compound include tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Triethylamine, tetrafluoroborane amine, and the like. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. Diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolac resin salt. However, the present invention is not limited thereto.

More specifically, organic phosphorus compounds, boron compounds, amine-based or imidazole-based curing accelerators may be used alone or in combination as the curing accelerator. As the curing accelerator, it is also possible to use an adduct made by reacting with an epoxy resin or a curing agent.

The amount of the curing accelerator used in the present invention may be about 0.01 wt% to about 2 wt% based on the total weight of the epoxy resin composition, specifically about 0.02 wt% to about 1.5 wt%, more specifically about 0.05 wt% 1% by weight. It may be advantageous that the curing of the epoxy resin composition is accelerated within the above-mentioned range and the curing degree is also good.

Coupling agent

The coupling agent is for improving the interface strength by reacting between the epoxy resin and the inorganic filler, and may be, for example, a silane coupling agent. The silane coupling agent is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler to improve the interface strength between the epoxy resin and the inorganic filler. Specific examples of the silane coupling agent include epoxy silane, aminosilane, ureido silane, mercaptosilane, and the like. The coupling agent may be used alone or in combination.

The coupling agent is used in an amount of about 0.01 wt% to about 5 wt%, preferably about 0.05 wt% to about 3 wt%, more preferably about 0.1 wt% to about 2 wt%, based on the total weight of the epoxy resin composition As shown in FIG. The strength of the cured product of the epoxy resin composition in the above range can be improved.

Release agent

As the release agent, at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt can be used.

The release agent may be included in an amount of about 0.1 wt% to about 1 wt% of the epoxy resin composition.

coloring agent

The coloring agent is for laser marking of a semiconductor element sealing material, and colorants well-known in the art can be used and are not particularly limited. For example, the colorant may include one or more of carbon black, titanium black, Nubian black, titanium nitride, dicopper hydroxide phosphate, iron oxide, mica.

The colorant is used in an amount of about 0.01% to about 5% by weight, preferably about 0.05% to about 3% by weight, more preferably about 0.1% to about 2% by weight based on the total weight of the epoxy resin composition .

In addition, the epoxy resin composition of the present invention may contain a stress-relieving agent such as a modified silicone oil, a silicone powder, and a silicone resin to the extent that the object of the present invention is not impaired; Antioxidants such as Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane; And the like may be further contained as needed.

The epoxy resin composition may be prepared by uniformly mixing the above components uniformly at a predetermined mixing ratio using a Hensel mixer or a Lodige mixer and then kneading the mixture in a roll mill or a kneader kneader, and then cooled and pulverized to obtain a final powder product.

The epoxy resin composition for semiconductor encapsulation according to the present invention formed of the above-described components has a relative dielectric constant of about 20 or more, for example, about 25 to about 50, specifically about 27 to about 40, More specifically from about 29 to about 40. In the above-mentioned range, the epoxy resin is applied to the sealing of the capacitive-type semiconductor device and can exhibit excellent performance.

In addition, the epoxy resin composition for semiconductor encapsulation may have a discharge start time due to high frequency of about 3 seconds or more. For example, about 5 seconds or more, about 10 seconds or more, or about 30 seconds or more. Within this range, the possibility of explosion is minimized and safety can be ensured.

The epoxy resin composition for semiconductor encapsulation has a fingerprint recognition rate of about 90% or more, for example about 90% to about 100%, specifically about 93% to about 100%, in a touch-based fingerprint recognition evaluation method using capacitance. , More specifically from about 95% to about 100%, from about 96% to about 100%, from about 97% to about 100%, from about 98% to about 99.9%, from about 99.5% to about 99.9%.

The epoxy resin composition of the present invention as described above is usefully applied to a semiconductor device, particularly, a thin film type semiconductor device which requires low relative dielectric constant and low dielectric constant dependence of temperature dependency. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method can be generally used. However, molding can also be performed by injection molding, casting, compression molding or the like.

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

Example

The specifications of each component used in the following examples are as follows.

(A) an epoxy resin

(a1) Biphenyl type epoxy resin: YX-4000H product (epoxy equivalent 196) manufactured by Japan Epoxy Resin was used.

(a2) phenol aralkyl type epoxy resin: NC-3000 product (epoxy equivalent weight 270) manufactured by Nippon Kayaku was used.

(B) Curing agent

(b1) Multifunctional phenol resin: MEH-7500-3S (hydroxyl equivalent of 95) manufactured by Meiwa Chem. was used.

(b2) Phenol aralkyl phenolic resin: MEH-7851-SS product (hydroxyl equivalent 203) prepared in Meiwa was used.

(b3) Phenol novolac phenolic resin: An H-4 product (hydroxyl equivalent of 106) prepared in Meiwa was used.

(C) Inorganic filler

(C-1) a first inorganic filler

An X7R302N product (barium-titanium-yttrium oxide (particle diameter 1.1 mu m) manufactured by Xiantao Zhongxing Electronic) was used.

(C-2) Second inorganic filler

DAB-05MS manufactured by alumina: DENKA DENKI having an average particle diameter of 7.6 mu m was used.

(D) Curing accelerator: 2-phenyl-4-methylimidazole (2P4MHZ) manufactured by Shikoku Chemicals was used.

(E) Coupling agent: Epoxysilane (A-187) manufactured by CHISSO was used.

(F) Colorant

(f1) Carbon black: MA-600B manufactured by Mitsubishi Chemical was used.

(f2) Black dye: Nubian Black TH-807 manufactured by Orient Chemical (pH 7.0) was used.

(G) Release agent: Carnauba wax was used.

(H) Explosion inhibitor

 0.0 > MP < / RTI > 88 degrees triphenylphosphine oxide PP-560 was used.

Preparation Example: Preparation of barium-titanium-yttrium oxide treated with triphenyl oxide

After dissolving triphenylphosphine oxide (HOKKO, PP-560) in acetone, it was mixed with barium-titanium-yttrium oxide (Xiantao Zhongxing, X7R302N, particle size 1.1 탆) which is an inorganic filler and then put in a hood mixer and the mixture was stirred at 3,000 ~ 5,000 RPM And mixed for 5 minutes. A raw material in which the fraction of triphenylphosphine oxide was controlled to 0.5 to 6.0% was obtained.

The components of the inorganic fillers (c1) to (c7) used in Examples and Comparative Examples are as follows when the total inorganic filler content is 100% by weight.

(c1) 90 wt% of barium-titanium-yttrium oxide (center particle diameter 1.13 mu m) treated with 0.5 wt% triphenylphosphine oxide and 10 wt% of alumina DAB-05MS having an average particle diameter of 7.6 mu m

(c2) 90 wt% of barium-titanium-yttrium oxide (center particle diameter 1.17 mu m) treated with 1.5 wt% triphenylphosphine oxide and 10 wt% of alumina DAB-05MS having an average particle diameter of 7.6 mu m

(c3) 90 wt% of barium-titanium-yttrium oxide (center particle diameter: 1.23 mu m) treated with 3.0 wt% triphenylphosphine oxide and 10 wt% of alumina DAB-05MS having an average particle diameter of 7.6 mu m

(c4) 90 wt% of barium-titanium-yttrium oxide (center particle size 7 탆) treated with 6.0 wt% triphenylphosphine oxide and 10 wt% of alumina DAB-05MS having an average particle size of 7.6 탆

(c5) 90% by weight of barium-titanium-yttrium oxide (particle size 1.1 탆) (X7R302N) and 10% by weight of alumina DAB-05MS having an average particle size of 7.6 탆

(c6) 5% by weight of barium-titanium-yttrium oxide (particle size 1.1 탆) (X7R302N) and 95% by weight of alumina DAB-05MS having an average particle diameter of 7.6 탆

(c7) 100% by weight of alumina DAB-05MS having an average particle diameter of 7.6 [

Examples 1 to 7 and Comparative Examples 1 to 4

Each of the above components was weighed according to the composition shown in Table 2, and then uniformly mixed using a Henschel mixer to prepare a powdery first composition. Thereafter, the mixture was melt-kneaded at 120 DEG C for 30 minutes using a continuous kneader, cooled to 10 to 15 DEG C and pulverized to prepare an epoxy resin composition for semiconductor encapsulation.

(Unit: wt%)		Example 1	Example 2	Example 3	Example 4	Comparative Example 1	Comparative Example 2	Comparative Example 3
(A)	(a1)	2.47	2.47	2.47	2.47	2.47	2.47	2.47
	(a2)	2.54	2.54	2.54	2.54	2.54	2.54	2.54
(B)	(b1)	0.86	0.86	0.86	0.86	0.86	0.86	0.86
	(b2)	1.25	1.25	1.25	1.25	1.25	1.25	1.25
	(b3)	1.41	1.41	1.41	1.41	1.41	1.41	1.41
(C)	(c1)	90.0	-	-	-	-	-	-
	(c2)	-	90.0	-	-	-	-	-
	(c3)	-	-	90.0	-	-	-	-
	(c4)	-	-	-	90.0	-	-	-
	(c5)	-	-	-	-	90.0	-	-
	(c6)	-	-	-	-	-	90.0	-
	(C7)	-	-	-	-	-	-	90.0
(D)		0.07	0.07	0.07	0.07	0.07	0.07	0.07
(E)		0.40	0.40	0.40	0.40	0.40	0.40	0.40
(F)	(f1)	0.20	0.20	0.20	0.20	0.20	0.20	0.20
	(f2)	0.10	0.10	0.10	0.10	0.10	0.10	0.10
(G)		0.70	0.70	0.70	0.70	0.70	0.70	0.70
Sum		100	100	100	100	100	100	100
(H)		0.5	1.5	3.0	6.0	0	0	0

 (In Table 1, the content of (H) means the% by weight based on 100% by weight of the total inorganic filler content.)

The epoxy resin composition for sealing semiconductor devices prepared above was evaluated for physical properties by the following methods and is shown in Table 3 below.

Property evaluation method

(1) Spiral flow (inch): A mold for spiral flow measurement according to EMMI-1-66 was molded using a low pressure transfer molding machine under the conditions of a mold temperature of 175 캜, 70 kgf / cm ² , an injection pressure of 9 MPa and a curing time of 90 seconds The epoxy resin composition was injected and the flow length was measured. The higher the measured value, the better the fluidity.

(2) Specific dielectric constant: The relative dielectric constant was measured by placing a measurement sample between two electrodes (dielectric sensor) using a dielectric constant meter (Dielectric Probe Kit Agilent 85070E) manufactured by Agilant Inc. at a temperature of 25 ° C and a frequency of 1.0 GHz.

(3) Thermal conductivity (W / mK): measured at 25 캜 using test specimens according to ASTM D5470.

(4) Glass transition temperature (Tg): Evaluated by TMA (Thermomechanical Analyzer).

(5) Coefficient of thermal expansion (? 1): Evaluated according to ASTM D696.

(6) Flexural Strength and Flexural Modulus: Standard specimens were prepared in accordance with ASTM D-790, and then cured at 175 ° C for 4 hours using UTM.

(7) Moisture absorption rate (%): The resin compositions prepared in the above Examples and Comparative Examples were heated at a mold temperature of 170 ° C to 180 ° C, a clamp pressure of 70 kgf / cm ² , a feed pressure of 1000 psi, a feed rate of 0.5 to 1 cm / 120 seconds to obtain a disk-shaped cured specimen having a diameter of 50 mm and a thickness of 1.0 mm. The obtained specimens were placed in an oven at 170 ° C to 180 ° C and post cured for 4 hours. The samples were allowed to stand for 168 hours at 85 ° C and 85 RH% relative humidity. The moisture absorption rate was calculated by Equation (2).

[Formula 2]

(%) = (Weight of sample after moisture absorption - weight of sample before moisture absorption) / (weight of sample before moisture absorption) Х100

(8) Discharge test: The pelletized product of 40 psi and 50 g was inserted into a 5 mm gap in a high frequency preheater, and the degree of discharge due to high frequency was determined by the time (sec) in which the high frequency preheater caused by discharge was stopped during operation. The longer the discharge start time, the better the explosion proof performance. (-) did not start discharging.

(9) Fingerprint Recognition Rate (%): A total of 20 capacitive FBGA packages were fabricated, and five fingerprint recognition tests were performed for each package, and the success rate of fingerprint recognition among the total 120 times was calculated as the fingerprint recognition rate (%) .

		Example 1	Example 2	Example 3	Example 4	Comparative Example 1	Comparative Example 2	Comparative Example 3
Spiral flow (inch)		45	47	50	51	57	54	52
Relative permittivity		37.3	35.6	32.4	29.5	18.3	10.3	8.7
Thermal conductivity (W / mK)		1.2	1.3	1.2	1.4	1.9	3.0	3.2
Tg (占 폚)		127	129	131	130	132	139	136
Thermal expansion coefficient? 1 (占 퐉 / m, 占 폚)		9	9	9	10	10	11	11
Flexural Strength (kgf / mm 2 )		1.2	1.3	1.1	1.2	1.3	1.6	1.7
Flexural modulus (kgf / mm 2 )		36	33	32	30	44	62	65
Moisture absorption rate (%)		0.21	0.22	0.24	0.26	0.18	0.23	0.25
Discharge test	Discharge start time (5 times average, sec)	6	13	32	-	One	253	-
Fingerprint recognition evaluation	Recognition rate (%) (up to 5 times)	99.7	99.6	99.3	99.1	99.4	87.4	83.8
	Number of test packages	120	120	120	120	120	120	120

As shown in Table 2, the epoxy resin compositions for sealing semiconductor devices of Examples 1 to 4 including barium-titanium-yttrium oxide treated with triphenylphosphine oxide had very high relative dielectric constant values, And it is confirmed that the reliability is secured because the recognition rate is very high as 99% or more in the fingerprint recognition evaluation. However, Comparative Examples 1 to 3 which did not contain triphenylphosphine oxide exhibited poor effects in at least one of the properties as compared with the Examples. In Comparative Example 1 using an inorganic filler containing 90 wt% of biphenyl-titanium-yttrium oxide not treated with triphenylphosphine oxide, the fingerprint recognition rate was very high, but the relative dielectric constant values were lower than those of the examples, The start time was 1sec and the possibility of explosion was high. In Comparative Examples 2 and 3, in which alumina was excessively applied, the relative dielectric constant was low and the fingerprint recognition rate was very low.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are in all respects illustrative and not restrictive.

Claims (13)

1. An epoxy resin, a curing agent, an inorganic filler and an explosion-proofing agent,

   Wherein the inorganic filler comprises a first inorganic filler comprising barium-titanium-yttrium oxide represented by the following formula (1): < EMI ID =

   [Chemical Formula 1]

   BaTi _a Y _b O _4.5

   In the above formula (1), a is 0.1 to 2, and b is 1 to 3.
2. The method according to claim 1,

   Wherein the explosion-proofing agent comprises triphenylphosphine oxide.
3. The method according to claim 1,

   From about 0.5% to about 20% by weight of the epoxy resin, from about 0.1% to about 13% by weight of a curing agent, from about 50% to about 98% by weight of an inorganic filler, and from about 0.1% (EN) Epoxy resin composition for semiconductor encapsulation.
4. The method according to claim 1,

   Wherein the first inorganic filler is coated with the explosion-proofing agent in advance before the epoxy resin composition is prepared.
5. The method according to claim 1,

   Wherein the barium-titanium-yttrium oxide has a weight ratio of barium (Ba) and yttrium (Y) of about 0.3: 1 to about 1.5: 1.
6. The method according to claim 1,

   Wherein the first inorganic filler further comprises at least one of zirconium oxide (ZrO ₂ ), magnesium oxide (MgO), and manganese carbonate (MnCO ₃ ).
7. The method according to claim 1,

   Wherein the inorganic filler further comprises a second inorganic filler.
8. 8. The method of claim 7,

   Wherein the epoxy resin composition has a ratio of the first inorganic filler to the second inorganic filler of about 0.05: 1 to about 50: 1.
9. 8. The method of claim 7,

   About 0.1 wt% to about 10 wt% of a hardener, about 50 wt% to about 98 wt% of a first inorganic filler, about 0.1 wt% to about 40 wt% of a second inorganic filler, about 0.5 wt% to about 15 wt% %, An explosion-proofing agent in an amount of about 0.1 wt% to about 15 wt%.
10. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin comprises at least one of a biphenyl type epoxy resin and a phenol aralkyl type epoxy resin.
11. The method according to claim 1,

    Wherein the epoxy resin composition has a dielectric constant of about 20 or more at a temperature of 25 캜 and a frequency of 1.0 GHz after curing.
12. The method according to claim 1,

    Wherein the epoxy resin composition has a fingerprint recognition rate of about 90% or more and a discharge start time due to high frequency of about 3 seconds or more in a touch-based fingerprint recognition rate evaluation method using capacitance.
13. A semiconductor device encapsulated with the epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 12.