WO2019131564A1 - Instrument de mesure pour phénomènes chimiques/physiques et son procédé de fabrication - Google Patents

Instrument de mesure pour phénomènes chimiques/physiques et son procédé de fabrication Download PDF

Info

Publication number
WO2019131564A1
WO2019131564A1 PCT/JP2018/047398 JP2018047398W WO2019131564A1 WO 2019131564 A1 WO2019131564 A1 WO 2019131564A1 JP 2018047398 W JP2018047398 W JP 2018047398W WO 2019131564 A1 WO2019131564 A1 WO 2019131564A1
Authority
WO
WIPO (PCT)
Prior art keywords
array
constant potential
unit
chemical
sensing unit
Prior art date
Application number
PCT/JP2018/047398
Other languages
English (en)
Japanese (ja)
Inventor
澤田　和明
達哉 岩田
直也 新名
Original Assignee
国立大学法人豊橋技術科学大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 国立大学法人豊橋技術科学大学 filed Critical 国立大学法人豊橋技術科学大学
Priority to JP2019561679A priority Critical patent/JP6709423B2/ja
Publication of WO2019131564A1 publication Critical patent/WO2019131564A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416—Systems

Definitions

  • the present invention relates to the improvement of a measuring apparatus for chemical and physical phenomena.
  • a so-called Sawada unit using floating diffusion is known as a measuring device of chemical and physical phenomena.
  • the Sawada unit 1 has the following basic structure. For example, as shown in FIG. 1, a sensing unit 10, a charge supply unit 20, a charge transfer / storage unit 30, a charge amount detection unit 40 and a charge removal unit 50 are formed on the surface of a silicon substrate.
  • the sensing unit 10 is provided with a sensing film 12 and a standard electrode 13 that change the potential according to the detection target.
  • the depth of the potential well 15 of the sensing unit 10 (p diffusion region 72) changes according to the potential change of the sensitive film 12.
  • the charge supply unit 20 includes an injection diode unit (sometimes abbreviated as “ID unit” in this specification) 21 and an input control gate unit (sometimes abbreviated as “ICG unit” in this specification) 23.
  • the charge of the ID unit 21 is supplied to the potential well 15 of the sensing unit 10 by charging the ID unit 21 with a charge and controlling the potential of the ICG unit 23.
  • the charge transfer / accumulation unit 30 includes a transfer gate unit (sometimes abbreviated as "TG unit” in this specification) 31 and a floating diffusion unit (sometimes abbreviated as “FD unit” in this specification) 33. .
  • TG unit transfer gate unit
  • FD unit floating diffusion unit
  • the charge accumulated in the FD unit 33 is detected by the charge amount detection unit 40.
  • a source follower type signal amplifier can be used as the charge amount detection unit 40.
  • the charge removal unit 50 includes a reset gate unit (sometimes abbreviated as "RG unit” in this specification) 51 and a reset drain unit (sometimes abbreviated as "RD unit” in this specification) 53. .
  • RG unit reset gate unit
  • RD unit reset drain unit
  • the detection device and the operation thereof will be described by taking a pH sensor for detecting a hydrogen ion concentration as an example.
  • a pH sensor for detecting a hydrogen ion concentration as an example.
  • an electron is employed as the charge, and the target portion of the substrate 71 is appropriately doped so as to be suitable for the transfer of the electron.
  • the detection device 1 as a pH sensor includes an n-type silicon substrate 71, and a portion corresponding to the sensing unit 10 is a p-type diffusion layer 72.
  • the surface of the p-type diffusion layer 72 is n-type doped (n region 73).
  • n + regions 74, 75 and 77 are formed in the ID portion 21, the FD portion 33 and the RD portion 53, respectively.
  • a protective film 81 made of silicon oxide is formed on the surface of the silicon substrate 71, and the electrode of the ICG portion 23, the electrode of the TG portion 31, and the electrode of the RG portion 51 are stacked thereon. When a voltage is applied to each electrode, the potential of the silicon substrate 71 in the portion opposite to it changes.
  • the sensitive film 12 made of silicon nitride is stacked on the protective film 81.
  • step (A) When the sensing unit 10 is brought into contact with the aqueous solution to be detected, the depth of the potential well 15 of the sensing unit 10 changes according to the hydrogen ion concentration of the aqueous solution (step (A)). That is, as the hydrogen ion concentration increases, the potential well 15 becomes deeper (the bottom potential increases).
  • step (B) the potential of the ID unit 21 is lowered to charge the charge here (see step (B)). At this time, the charge stored in the ID unit 21 exceeds the ICG unit 23 and fills the potential well 15 of the sensing unit 10.
  • the potential of the TG portion 31 is lower than that of the ICG portion 23, and the charge filled in the potential well 15 does not reach the FD portion 33 over the TG portion 31.
  • the charge that has been cut off by the ICG section 23 is left in the potential well 15 (see step (C)).
  • the amount of charge left in the potential well 15 corresponds to the depth of the potential well 15, that is, the hydrogen ion concentration to be detected.
  • the potential of the TG unit 31 is raised to transfer the charge left in the potential well 15 to the FD unit 33 (see step (D)).
  • the charge amount accumulated in the FD unit 33 is detected by the charge amount detection unit 40 (see step (E)).
  • the potential of the RG unit 51 is raised to discharge the charge of the FD unit 33 to the RD unit 53 (see step (F)).
  • the RD unit 53 is connected to the VDD and absorbs the negatively charged charge.
  • the Sawada unit described in FIGS. 1 and 2 measures the hydrogen ion concentration, so the object to be measured is a conductive liquid. Therefore, even in an array in which a plurality of Sawada units are two-dimensionally arranged, the standard electrode may be disposed in a part of the array and may be contacted with the liquid. This is because when the standard electrode comes in contact with the measurement target which is a conductive liquid, the potential of the measurement target becomes constant over the entire area.
  • the sensitive film in the configuration of FIG. 1 the concentration of any chemical component can be measured. For example, when a polyaniline sensitive film is formed on a sensitive film made of a silicon nitride film, the potential of the polyaniline sensitive film changes according to the concentration of ethanol or ammonia.
  • the inventors of the present invention have made intensive studies to suitably measure the gas component of a gas using a chemical / physical measurement apparatus comprising an array of Sawada units, and have conceived the present invention having the following constitution. That is, the first aspect of the present invention is defined as follows.
  • a sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electrical signal according to the depth of the potential well of the sensing unit.
  • An array of measuring units for chemical and physical phenomena A constant potential portion disposed in the vicinity of the array of measurement units, the constant potential portion being disposed along the arrangement rule of the array of the measurement units in plan view, and the reference point of the array A constant potential portion which coincides with the reference point of the constant potential portion;
  • Measurement equipment for chemical and physical phenomena equipped with
  • the constant potential portion is disposed in proximity to the array along the arrangement rule of the array of measuring units, and the reference of this constant potential portion The point and the reference point of the array coincide.
  • the constant potential portion may be disposed on top of the sensitive membrane covering the array, or may be disposed on the same plane as the array, ie below the polyaniline membrane.
  • the constant potential portion following the arrangement rule of the array means that there is a predetermined relationship between the two-dimensional arrangement direction of the array and its pitch and the two-dimensional shape of the constant potential portion and its pitch.
  • matching the reference point of the constant potential portion with the reference point of the array means that the positional relationship between the two is defined with some intention.
  • the positional relationship between the sensing unit and the constant potential unit of the measurement unit can be accurately controlled. This facilitates control of the potential of the sensing film in contact with the sensing unit of each measurement unit.
  • a sensitive film sensitive to changes in chemical and physical phenomena a change in carrier density occurs, and as a result, it is considered that material characteristics (such as conductivity) change at a constant rate. Therefore, if the sensitive film in the default state is kept at the standard potential before the chemical / physical phenomenon is sensed, that is, when it is sensitive to the chemical / physical phenomenon (for example, the sensitive film made of polyaniline)
  • the outputs of all measurement units of the array show values according to the chemical and physical phenomena.
  • the potentials of the sensitive film in contact with the sensing unit can be controlled to align them, the output of each measurement unit can be accurately reflected on the chemical and physical phenomena to be measured.
  • the variation in the potential of the sensitive film in contact with the sensing unit of each measuring unit is also allowed, and the error of the distance from each sensing unit to the constant potential unit is specified. From the viewpoint of the sensitivity required of the measuring device, it can be said that the potentials of the sensing films contacting the respective sensing parts were substantially constant.
  • the measurement units are generally arranged in a grid pattern in plan view, that is, at the same pitch in the XY direction.
  • the constant potential portion is also arranged along the XY direction.
  • the reference point of the constant potential portion and the reference point of the array of measurement units are made to coincide in plan view.
  • the reference point refers to the position of (0, 0) in the element extending in two dimensions (X, Y).
  • the constant potential part is positioned as close as possible to the sensing part of the measuring unit, preferably immediately above.
  • the constant potential portion has a mesh structure with the same pitch. That is, one continuous element (member) of mesh structure may be provided to a plurality of measurement units constituting the array. Therefore, the burden of wiring to the integrated circuit hardly occurs. From the viewpoint of securing the opening area of the sensing unit, this mesh may surround each of the sensing units one by one or collectively.
  • the constant potential portions can be arranged in parallel.
  • the position of each measurement unit constituting the array with respect to the sensing unit is stabilized.
  • the potential of the sensing film in contact with the sensing unit is equalized, and the depth of the potential well of the sensing unit of the measurement unit changes according to the amount of chemical and physical phenomenon to be measured based on this potential.
  • An electrical signal corresponding to the depth of the potential well is output from the detection region.
  • the electric signal from the measuring unit corresponds to the chemical amount or physical amount of the object to be measured by adopting the measuring device of the first aspect.
  • the constant potential parts are arranged along the arrangement rule of the array of measurement units, they can be one continuous element (member). As a result, the load on the wiring can be reduced compared to the structure in which independent standard electrodes are disposed in each of the sensing units of each measurement unit.
  • the second aspect of the present invention is defined as follows. That is, in the measurement apparatus defined in the first aspect, the constant potential portion is disposed on the array of the measurement units. According to the measuring apparatus of the second aspect defined as described above, the distance between the sensing unit of the measuring unit and the constant potential unit can be made as close as possible. As a result, the potential of the sensing film in contact with the sensing unit becomes more stable. In order to make the distance between the sensing unit and the constant potential unit of the measurement unit closest to each other, the constant potential unit is positioned immediately above the sensing unit. Thereby, the potential of the sensing film in contact with the sensing unit is most stabilized. In order to secure a larger opening area of the sensing unit, a constant potential unit is disposed between the adjacent measurement units above the array. This improves the sensitivity.
  • the third aspect of the present invention is defined as follows. That is, in the measuring device of the first or second aspect, the constant potential portion is made of metal wiring. According to the measuring apparatus of the third aspect defined in this manner, the apparatus configuration can be simplified by using the metal wiring, and this can be provided at low cost.
  • the fourth aspect of the present invention is defined as follows. That is, in the measurement apparatus defined in the first or second aspect, the first electric signal from the measurement unit not covered by the constant potential part and the second electric signal from the measurement unit covered by the constant potential part A comparison unit that compares the signal with And an output unit that outputs the comparison result of the comparison unit.
  • the first electric signal output from the measuring unit covered by the constant potential part is dominated by the potential of the constant potential part.
  • the second electric signal output from the measurement unit not covered with the constant potential portion changes in accordance with the gas component contained in the gas to be observed. Therefore, by comparing the first electrical signal and the second electrical signal, the concentration change of the gas component, in particular, the temporal change can be observed.
  • the fifth aspect of the present invention is defined as follows.
  • a sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electrical signal according to the depth of the potential well of the sensing unit.
  • An array of measuring units for chemical and physical phenomena A constant potential portion disposed in the vicinity of the array of measurement units, the constant potential portion being disposed along the arrangement rule of the array of the measurement units in plan view, and the reference point of the array A constant potential portion which coincides with the reference point of the constant potential portion;
  • a method of manufacturing a chemical / physical phenomenon measuring apparatus comprising An array manufacturing step of manufacturing the array of measurement units using a manufacturing process of a semiconductor integrated circuit; Forming the constant potential portion on the sensitive film of the array of measurement units.
  • the manufacturing method of the measuring device of the fifth aspect defined as above not only the manufacturing of the array of measuring units but also the manufacturing of the constant potential portion formed on the array is the same as the manufacturing process of the semiconductor integrated circuit. It becomes applicable.
  • the entire apparatus can be manufactured in large quantities at low cost. Following the fabrication of the array of measurement units, the same process equipment can be used to form the potentiostat. As a result, it is possible to easily and accurately place the constant potential part along the arrangement rule of the array and to match the reference point of the array with the reference point of the constant potential part.
  • the sixth aspect of the present invention is defined as follows.
  • a sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electrical signal according to the depth of the potential well of the sensing unit.
  • An array of measuring units for chemical and physical phenomena A constant potential portion disposed in the vicinity of the array of measurement units, the constant potential portion being disposed along the arrangement rule of the array of the measurement units in plan view, and the reference point of the array A constant potential portion which coincides with the reference point of the constant potential portion;
  • a method of manufacturing a chemical / physical phenomenon measuring apparatus comprising An array manufacturing step of manufacturing the array of measurement units using a manufacturing process of a semiconductor integrated circuit; Forming an array of the measurement units and forming a sensitive film on the constant potential portion.
  • the constant potential portion is formed simultaneously with the array in the manufacturing process of the semiconductor integrated circuit. Therefore, the manufacturing process is simplified, and a cheaper apparatus can be provided.
  • the seventh aspect of the present invention is defined as follows. That is, a sensing unit that changes the depth of the potential well according to the surface potential, a sensitive film that covers the sensing unit, and a detection region that outputs an electrical signal according to the depth of the potential well of the sensing unit.
  • An array of measurement units for chemical and physical phenomena comprising A constant potential portion made of metal wiring disposed in proximity to the array of measurement units;
  • a method of manufacturing a chemical / physical phenomenon measuring apparatus comprising A constant potential portion mounting step of mounting the constant potential portion made of the metal wiring on the surface of the array of the measurement units;
  • the polymer material constituting the sensitive film is supplied in a fluid state to the surface of the array of the measurement unit on which the constant potential portion is mounted to cover the surface of the array, and the constant potential is applied onto the polymer material.
  • a curing step of curing the polymeric material According to the measuring apparatus of the seventh aspect defined as described above, the apparatus can be manufactured by a simple operation. Therefore, the measuring device can be provided simply and inexpensively.
  • FIG. 1 is a schematic view showing the configuration of a basic unit of a measurement unit of chemical and physical phenomena.
  • FIG. 2 is a view showing the operation of the measurement unit of FIG.
  • FIG. 3 is a plan view of a measuring device of a trial example of the present invention.
  • FIG. 4 shows an output result of the measuring apparatus of the trial example shown in FIG.
  • FIG. 5 shows the main part of the measuring device of the embodiment of the present invention.
  • FIG. 6 shows an output result of the measuring apparatus of the embodiment shown in FIG.
  • FIG. 8 (b) is a cross-sectional view showing a measuring apparatus 300 according to a modification of the measuring apparatus 200. Shows a measuring device 400 of a variant of the measuring device 300.
  • FIG. 3 shows the structure of the measuring device 100 of the trial example.
  • reference numeral 101 denotes an array of Sawada units (measuring units) shown in FIG. 1, for example, having a square face of 7.3 mm ⁇ 7.3 mm, and about 16000 Sawada units are accumulated therein .
  • a polyaniline film 103 (about 15 ⁇ l) covers the entire area of the array 101 as a sensitive film on the sensitive film made of a silicon nitride film. It is considered that the carrier density of the conductive polymer such as polyaniline changes depending on the acid or alkali contained in the measurement object, and as a result, the conductivity, the dielectric constant and the shielding distance change.
  • reference numeral 105 denotes an electrode made of gold paste, which is applied to a position away from the array 101 in the polyaniline film 103, to which a constant potential (standard potential) is applied.
  • a constant potential standard potential
  • FIG. 3 An image obtained after 9 minutes is shown in FIG.
  • the voltage applied to the electrode 105 is 1.094V.
  • Each pixel of the image shown in FIG. 4 corresponds to each Sawada unit constituting the array 101, and the value of the pixel is specified from the electric signal output from the corresponding Sawada unit.
  • each Sawada unit of the array 101 has variations. Specifically, the potential decreases as the distance from the electrode 105 increases. This is considered to be due to the fact that the reference potential varies and high precision measurement is inhibited.
  • the present inventors adopted the mesh electrode 110 shown in FIG. 5 in place of the gold paste 5.
  • the mesh electrode 110 covers the entire area of the polyaniline film 103 and is connected to a constant voltage source (1.473 V) at a position away from the array 101.
  • the mesh electrode 110 is formed by depositing gold on both sides of a polymer mesh filter (MILLIPORE, NY1H4700) having square pores (100 ⁇ m ⁇ 100 ⁇ m).
  • MILLIPORE, NY1H4700 polymer mesh filter having square pores (100 ⁇ m ⁇ 100 ⁇ m).
  • the metal wire 112 of the mesh electrode 110 is disposed directly above some of the Sawada units constituting the array 101 via the sensitive film (polyaniline film 103).
  • the portion of the polyaniline film 103 covered with the metal wiring 112 is difficult to react with ethanol gas.
  • the output of the Sawada unit facing the metal wire 112 is controlled by the voltage of the metal wire 112.
  • the mesh electrode 110 is laminated on the polyaniline film 103 without being particularly aligned.
  • mesh electrode 110 was placed on the array, and then polyaniline before curing was supplied on the array.
  • polyaniline by adjusting the viscosity and specific gravity of polyaniline before curing, it was possible to make the mesh electrode float in a state of being entangled with polyaniline.
  • the polyaniline After leaving to stand for a while to make the polyaniline layer uniform in thickness, the polyaniline is cured. Thereby, the mesh electrode 110 is stably attached in parallel and mechanically to the array.
  • how to attach the mesh electrode 103 is not limited to the above. After the polyaniline film 103 is formed, the mesh electrode 110 can be stacked.
  • the mesh electrode is selected using mask technology of a general integrated circuit process. Molding is preferred.
  • FIG. 6 is an image obtained after 5 minutes. Each pixel of this image corresponds to the output of each Sawada unit.
  • an influence factor (electrons) caused by the ethanol gas diffuses in the polyaniline film 103. Therefore, the output of the part covered with the metal wiring 112 of the mesh electrode 110 and the part (pore part) which is not covered becomes the same.
  • FIG. 7 shows the change with time of the output of the measuring device shown in FIG. It can be seen that ethanol gas reacts with the polyaniline film through the pore portion 114, and as a result, the material characteristics change due to the change of the carrier density of the polyaniline film, and the potential changes accordingly. Note that, after 60 seconds, it can be seen that the influence of the reaction between ethanol gas and the polyaniline film in the pore portion 114 diffuses under the metal wire 112.
  • the array of Sawada units can be manufactured by the process of a general purpose semiconductor integrated circuit.
  • the sensitive film to be stacked on the sensing unit of the Sawada unit is appropriately selected according to the chemical and physical quantities to be measured.
  • the present invention is suitable when the object to be measured is insulating or conductive but has very small conductivity.
  • the present invention can be suitably used when the object to be measured is a gas.
  • any material can be selected as a material for forming the sensitive film, as long as it is used in a gas sensor, that is, a conductive material that reacts with gas components to cause a change in conductivity.
  • semiconductor materials such as tin oxide and indium oxide can be used.
  • the sensitive film is in contact with the constant potential portion.
  • FIG. 1 Another measuring apparatus 200 is shown in FIG. Elements having the same effects as those in FIG. 1 are given the same reference numerals, and the description thereof is omitted.
  • This measuring device 200 laminates a layer of polyaniline as a sensitive film 103 on the surface of the array 101 of the measuring unit 1. The structure so far is the same as the chip (measuring device) of FIGS. 3 and 5.
  • the constant potential portion 212 is formed immediately above the sensing unit 10 of each measurement unit 1.
  • the constant potential portion 212 crosses the position immediately above the sensing unit 10 of the measurement unit 1 in the direction perpendicular to the sheet, and similarly crosses the sensing unit 10 of the adjacent measurement units 1 in the same direction.
  • a uniform potential is applied from the reference power supply 215 to the constant potential portion 212 having such a structure. Therefore, the potentials of the sensitive films in contact with the sensing portions of the respective measurement units 1 are uniformly equalized.
  • the constant potential portion 212 of the measuring device 200 can be formed on the sensitive film 103 using a so-called lift-off method. That is, a resist is laminated on the sensitive film 103. Next, an opening is provided at a position where the constant potential portion 212 is to be formed in the laminated resist by etching or other known method. This opening is continuous.
  • a metal material is deposited as a conductive material.
  • a metal material is vapor-deposited on the sensitive film through the opening of the resist to form a constant potential portion 212.
  • the alignment of the measurement unit 1 and the constant potential unit 212 is based on the predetermined position of the substrate due to the limitation of the manufacturing apparatus. Based on the predetermined position of the substrate, an array of measurement units 1 is created, and a lift-off method is performed to form a constant potential portion. That is, in plan view, the predetermined position of the substrate is the reference point of the array of the measurement units 1 and the reference point of the constant potential portion 212.
  • FIG. 8 (b) A modified embodiment of the measuring device 200 is shown in FIG.
  • elements having the same function as in FIG. 8 (a) are assigned the same reference numerals, and the description thereof is omitted.
  • a constant potential unit 312 formed on the sensitive film 103 is disposed between the measuring units 1.
  • the opening area of the sensing unit 10 in each measurement unit 1 becomes wider than that in the configuration of FIG. 8A.
  • the measuring device 300 is formed in the same procedure as the measuring device 200.
  • FIG. 8C A modified embodiment of the measuring apparatus 300 is shown in FIG.
  • a constant potential portion 412 is disposed between the measuring units 1 on the surface of the array 101 without any sensitive film.
  • an insulating film SiO2 is interposed between the two.
  • the constant potential portion 412 is formed at the same timing as other electrodes (gate electrode etc.) in the semiconductor process of the array.
  • the shape of the constant potential portion can be arbitrarily selected as long as the sensitive film in contact with the sensing portion of each measurement unit has an equal potential over the entire area.
  • openings pores
  • the shape of the opening is not limited to a rectangle, and can be, for example, a circle.
  • the conductivity of the sensitive film is relatively high, it is possible to use one in which metal wires are arranged in parallel, one in which the metal wires are arranged at equal intervals, one in which the metal wires are arranged in an offset comb shape.
  • a constant potential part does not prevent that a measurement object contacts the sensitive film which coats the sensing part of a measurement unit.
  • the object to be measured can contact the sensitive film covering the sensing part of the measurement unit, if the object to be measured is a gas, it has no opening by selecting a material that can permeate it, ie It is also possible to adopt a constant potential part in a bulk state.
  • the material of the sensitive film can be arbitrarily selected according to the object of measurement.
  • a piezo material, a pyroelectric material, or a magnetic semiconductor material having a magnetoresistive effect can be applied to the sensitive film.
  • a conductive polymer such as polyaniline

Abstract

Dans la présente invention, les composants d'un gaz sont mesurés de manière appropriée à l'aide d'un instrument de mesure chimique/physique comprenant un réseau d'unités de mesure pour des phénomènes chimiques/physiques qui comprennent : une unité de détection qui fait varier la profondeur de puits potentielle en fonction du potentiel de surface ; un film de sensibilité qui recouvre l'unité de détection ; et une région de détection qui délivre des signaux électriques en fonction de la profondeur de puits potentielle de l'unité de détection. Une section de potentiel fixe est disposée à proximité du réseau d'unités de mesure. Cette section de potentiel fixe est, dans une vue en plan, disposée conformément à la règle d'agencement du réseau d'unités de mesure et le point de référence du réseau et le point de référence de la section de potentiel fixe coïncident.
PCT/JP2018/047398 2017-12-25 2018-12-22 Instrument de mesure pour phénomènes chimiques/physiques et son procédé de fabrication WO2019131564A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019561679A JP6709423B2 (ja) 2017-12-25 2018-12-22 化学・物理現象の測定装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-247522 2017-12-25
JP2017247522 2017-12-25

Publications (1)

Publication Number Publication Date
WO2019131564A1 true WO2019131564A1 (fr) 2019-07-04

Family

ID=67067282

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/047398 WO2019131564A1 (fr) 2017-12-25 2018-12-22 Instrument de mesure pour phénomènes chimiques/physiques et son procédé de fabrication

Country Status (2)

Country Link
JP (1) JP6709423B2 (fr)
WO (1) WO2019131564A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020240942A1 (fr) * 2019-05-31 2020-12-03 浜松ホトニクス株式会社 Capteur d'odeur et procédé de détection d'odeur
WO2021019870A1 (fr) * 2019-07-26 2021-02-04 浜松ホトニクス株式会社 Dispositif de détection d'odeurs et procédé de détection d'odeurs
WO2021019871A1 (fr) * 2019-07-26 2021-02-04 浜松ホトニクス株式会社 Dispositif de détection d'ions et procédé de détection d'ions

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03502149A (ja) * 1987-10-29 1991-05-16 マサチューセッツ インスティテュート オブ テクノロジー 無機酸化還元活性物質をベースとする超小型電気化学デバイス
JP2012207991A (ja) * 2011-03-29 2012-10-25 Rohm Co Ltd イメージセンサ
WO2016035752A1 (fr) * 2014-09-02 2016-03-10 国立大学法人京都大学 Élément pour électrodes de référence et dispositif capteur d'ions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03502149A (ja) * 1987-10-29 1991-05-16 マサチューセッツ インスティテュート オブ テクノロジー 無機酸化還元活性物質をベースとする超小型電気化学デバイス
JP2012207991A (ja) * 2011-03-29 2012-10-25 Rohm Co Ltd イメージセンサ
WO2016035752A1 (fr) * 2014-09-02 2016-03-10 国立大学法人京都大学 Élément pour électrodes de référence et dispositif capteur d'ions

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020240942A1 (fr) * 2019-05-31 2020-12-03 浜松ホトニクス株式会社 Capteur d'odeur et procédé de détection d'odeur
JP7391540B2 (ja) 2019-05-31 2023-12-05 浜松ホトニクス株式会社 匂いセンサ及び匂い検出方法
WO2021019870A1 (fr) * 2019-07-26 2021-02-04 浜松ホトニクス株式会社 Dispositif de détection d'odeurs et procédé de détection d'odeurs
WO2021019871A1 (fr) * 2019-07-26 2021-02-04 浜松ホトニクス株式会社 Dispositif de détection d'ions et procédé de détection d'ions
CN114174815A (zh) * 2019-07-26 2022-03-11 浜松光子学株式会社 气味检测装置和气味检测方法
CN114207422A (zh) * 2019-07-26 2022-03-18 浜松光子学株式会社 离子检测装置和离子检测方法
US20220260519A1 (en) * 2019-07-26 2022-08-18 Hamamatsu Photonics K.K. Smell detection device and smell detection method

Also Published As

Publication number Publication date
JP6709423B2 (ja) 2020-06-17
JPWO2019131564A1 (ja) 2020-05-28

Similar Documents

Publication Publication Date Title
US9239310B2 (en) Capacitive sensor integrated onto semiconductor circuit
WO2019131564A1 (fr) Instrument de mesure pour phénomènes chimiques/physiques et son procédé de fabrication
EP2568282B1 (fr) Détecteur sensible aux ions
JP6494438B2 (ja) ガスセンサパッケージの製造方法
CN112400108A (zh) 气味传感器及气味传感器的制造方法
US9506885B2 (en) Sensor chip
JP4458135B2 (ja) 液体性状センサ
US20110100810A1 (en) Chip integrated ion sensor
KR101322354B1 (ko) 습도 센서, 습도 센싱 방법 및 이를 위한 트랜지스터
US20160313375A1 (en) Chip scale current sensor package and method of producing a current sensor package
WO2018180107A1 (fr) Capteur d'humidité
US10520457B2 (en) Sensor of volatile substances with integrated heater and process for manufacturing a sensor of volatile substances
US20190195825A1 (en) Electrochemical sensor, and a method of forming an electrochemical sensor
JP7391540B2 (ja) 匂いセンサ及び匂い検出方法
US20220146449A1 (en) Electrochemical sensor, and a method of forming an electrochemical sensor
US20240060930A1 (en) Ion sensor and ion sensor manufacturing method
US11175162B2 (en) Integrated circuit sensor package and method of manufacturing the same
JP2024004089A (ja) 匂いセンサ素子アレイ
KR20190035989A (ko) 가스 센서 패키지
JPWO2019225660A1 (ja) 化学センサ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18894241

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
ENP Entry into the national phase

Ref document number: 2019561679

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18894241

Country of ref document: EP

Kind code of ref document: A1