WO2019125013A1 - Micro-device transfer method and micro-device transfer apparatus - Google Patents

Micro-device transfer method and micro-device transfer apparatus Download PDF

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Publication number
WO2019125013A1
WO2019125013A1 PCT/KR2018/016357 KR2018016357W WO2019125013A1 WO 2019125013 A1 WO2019125013 A1 WO 2019125013A1 KR 2018016357 W KR2018016357 W KR 2018016357W WO 2019125013 A1 WO2019125013 A1 WO 2019125013A1
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WO
WIPO (PCT)
Prior art keywords
transfer film
micro
transfer
film
supporting
Prior art date
Application number
PCT/KR2018/016357
Other languages
French (fr)
Korean (ko)
Inventor
황보윤
윤성욱
김경식
김재현
김광섭
이학주
최병익
박현성
김정엽
이승모
장봉균
Original Assignee
한국기계연구원
재단법인 파동에너지 극한제어 연구단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국기계연구원, 재단법인 파동에너지 극한제어 연구단 filed Critical 한국기계연구원
Publication of WO2019125013A1 publication Critical patent/WO2019125013A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/95001Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate

Definitions

  • Micro-device transfer method and micro-device transfer device are Micro-device transfer method and micro-device transfer device
  • the present invention relates to a micro element transfer method, a micro element substrate and a micro element transfer apparatus manufactured thereby, and a micro element transfer method and a micro element transfer apparatus for transferring micro elements to a substrate or the like.
  • High-performance devices using semiconductor processes are implemented on a wafer substrate through various methods such as wafer-based coating, exposure, development, etching, thin-film processing, ion implantation, oxidation, and diffusion.
  • a space having wiring and other uses is required. In other words, a space is required between the device and the device. If all the devices are transferred all at once on the wafer, space between the device and the device can not be formed.
  • a process of selectively transferring devices in a device transfer process is often required.
  • a vacuum chuck 1 « ⁇
  • this approach is based on the constraints, It may take a long time to produce a display having a large number of pixels.
  • micro-scale 1) there is zero can increase the likelihood of damage
  • Embodiments of the present invention provide a micro element transfer method and a micro element transfer apparatus capable of reducing the possibility of breakage of a micro element and improving the transfer process efficiency of the micro element.
  • a method of transferring a micro-device according to an embodiment of the present invention is a method of transferring a micro-device according to an embodiment of the present invention, wherein a transfer portion of a micro- 1 < / RTI > area smaller than the adhesion area, and an attachment step in which the micro-device having the second adhesion area is attached to the target substrate while being separated from the transfer film.
  • the transfer film may be bent so that one side of the transfer film adhered to the micro device is convex so that the adhesion area of the micro device may be reduced inward from the edge.
  • the transfer film may be bent so that one side of the transfer film adhered to the microfluidic device may be recessed, so that the adhesive site of the microfluidic device may be contracted from the inside to the proximal position.
  • the transfer film has a length direction and a width direction of the transfer film 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • the micro-element transfer device may include a supporting portion and a supporting portion, which are formed on one surface of the supporting portion and extended in the width direction of the transferring film, A part of the micro device is dropped from the transfer film by pressing the other surface of the film to bend the one side of the transfer film so as to be convex so that the adhesion area between the micro device and the transfer film is made smaller than the first adhesion area And the pressing portion separates the transfer film from the micro device virtual transfer film adhered to the transfer material film with the second adhesion area so as to be attached to the target substrate, .
  • the supporting portion is provided in a pair and supports the other surface of the transfer film, the pressing portion is positioned between the pair of supporting portions, and the transfer film is bent and can be bent so as to protrude from the pair of supporting portions toward the target substrate .
  • the pressing portion is rotatable so that the extending direction is the direction opposite to the direction of the residual film in the width direction of the transfer film, and can be moved in a direction perpendicular to the extending direction of the width direction or the length direction of the transfer film.
  • micro element is disposed on a front end of the pressing part along the flow direction of the transfer film, and the micro element provided on the element providing member is separated from the element providing member, And a transition portion for pressing the other surface of the transfer film toward the element-providing member.
  • the support portion is disposed at a rear end of the pressing portion along the flow direction and supports the other surface of the transfer film, and the pressing portion is disposed to protrude from the transition portion and the support portion toward the target substrate to bend the transfer film .
  • a further supporting portion disposed at a rear end of the pressing portion and at a front end of the supporting portion in accordance with the flow direction and supporting the one surface of the transfer film and being further away from the target substrate than the pressing portion and bending the transfer film, You can include it.
  • the element-providing member may be a source substrate or a carrier film on which the micro device is mounted. 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • the micro-elements are separated from the element-providing member provided with micro-elements, and the transfer film is transferred onto one side of the transfer film, And a second transfer unit which is disposed at a rear end of the fifth transfer unit in accordance with the flow direction of the transfer film and which presses the other surface of the transfer film so that one side of the transfer film is convex Bending a portion of the adhesive portion of the micro element from the transfer film to reduce the adhesive area to a second adhesive area smaller than the first adhesive area, Wherein the microparticle having the adhesive area reduced to the second adhesive area through the pressure- And a transfer unit for pressing the transfer film toward the target substrate so as to be attached to the target substrate while being separated from the film.
  • a first support provided at a front end of the element providing member along the flow direction to support the transfer film and a rear end of the element providing member so that the transition is positioned between the first support and the first support, And a second supporting part for supporting the transfer film together with the first supporting part, a third supporting part provided at a front end of the target substrate for supporting the transfer film, and a second supporting part provided at the front end of the target substrate, And a fourth support part provided at the rear end and supporting the transfer film together with the third support part.
  • the second supporting portion and the third supporting portion support the one side of the transfer film and are moved downward to be spaced apart from the transfer film in a state in which the micro element bonded to the image transfer film enters,
  • the film can be moved up so as to be in close contact with the transfer film in a state in which it is passed.
  • the uppermost portion of the second support portion and the third support portion which are moved upward to be brought into close contact with the transfer film may be positioned higher than the lower end portion of the pressurizing portion.
  • the lower end of the pressing portion can be moved up and down so as to be positioned lower than the uppermost portion of the second supporting portion and the third supporting portion that have been moved up.
  • Embodiments of the present invention reduce the possibility of breakage of the micro- 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • a transfer method of a micro device and a transfer device of a micro device in which the transfer process efficiency of the transfer device can be improved can be provided.
  • FIG. 1 is a flow chart showing a method of transferring a micro element according to a first embodiment of the present invention.
  • Fig. 2 is an example of the process of Fig. 1.
  • FIG. 3 is an exemplary view showing a process that can be applied to the micro-element transfer method according to the first embodiment of the present invention.
  • FIG. 4 is a photograph showing an area of adhesion between a micro element and a transfer film to which a micro element transfer method according to the first embodiment of the present invention is applied.
  • FIG 5 is an exemplary view showing a micro-element transferring apparatus according to the first embodiment of the present invention.
  • FIG. 6 is a view showing an example of a pressing portion of a micro-device transferring apparatus according to the first embodiment of the present invention.
  • FIG. 7 is an exemplary view showing a micro-element transferring apparatus according to a second embodiment of the present invention.
  • FIG. 8 is a view showing an example of a micro-element transferring apparatus according to the third embodiment of the present invention.
  • FIG. 9 is a view showing an example of a micro-element transferring apparatus according to a fourth embodiment of the present invention.
  • FIG 10 is an exemplary view showing a process that can be applied to the microelectronic electronic method according to the second embodiment of the present invention.
  • any configuration is the element is, when the "connection is” there or in the states that 1, itgeo is directly coupled to the other component or or connected to other components iteulsu, another element in between May be present.
  • connection is
  • any configuration is the element is, when the "connection is” there or in the states that 1, itgeo is directly coupled to the other component or or connected to other components iteulsu, another element in between May be present.
  • an element when referred to as being “directly connected” or “directly connected” to another element, it should be understood that there are no other elements in between.
  • &quot comprises " or " having ", and the like, are used only to designate the presence of the features, numbers, steps, operations, elements, parts, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, or combinations thereof .
  • " 1 " and / or &quot includes any combination of a plurality of listed items or any of a plurality of listed items.
  • " or &quot may include ', 1 , or both 8 and 1 .
  • FIG. 1 is a flow chart showing a method of transferring a micro element according to a first embodiment of the present invention
  • FIG. 2 is a process of FIG .
  • the method of transferring a microcrystal may include a step of reducing the adhesion area (and 10) and an attaching step (and 20).
  • the step of reducing the adhesion area 10 is performed such that the transfer film 210 to which the micro element 200 is bonded by the first adhesion area 230 is bent so as to be convex in the direction in which the micro element 200 is attached, 200 are detached from the transfer film 210, 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • the bonding area between the crosstalks 200 and the transfer film 210 may be reduced to a second bonding area 235 smaller than the first bonding area 230.
  • the micro element 200 may be supplied while being adhered to one surface 211 of the transfer film 210.
  • the micro element 200 may be adhered to the transfer film 210 with a first adhesive area 230 (see FIG. 2).
  • the transfer film 210 may be bent so as to be convex in the direction in which the micro device 200 is attached.
  • the bending of the transfer film 210 may be performed by a pressing portion 240 that can partly press the other surface 212 of the transfer film 210.
  • the transfer film 210 When the transfer film 210 is bent to be convex in the direction in which the micro device 200 is attached by the pressing unit 240, some contact surfaces of the micro device 200 may be detached from the transfer film 210.
  • the area of adhesion between the microdevice 200 and the transfer film 210 can be reduced to a second bonding area 235 smaller than the first bonding area 230.
  • the transfer film 210 and the micro element 200 are separated from both sides of the micro element 200: (Fig. 2, 0 >)).
  • the transfer film 210 is bent so that the adhesive portion between the micro element 200 and the transfer film 210 is bonded to the transfer film 210 in a state where the micro element 200 is bonded to the transfer film 210 with the first bonding area 230.
  • the microdevice 200 is pressed against the target substrate 250 in the step of attaching the microdevice 200 to the target substrate 250 by making the second bonding area 235 smaller than the first bonding area 230 The pressure can be lowered, so that the possibility of breakage of the micro element 200 can be reduced.
  • the area of adhesion between the micro element 200 and the transfer film 210 is reduced by bending the transfer film 210, ) Can be increased.
  • FIG. 3 is a view illustrating a process that can be applied to the micro-element transfer method according to the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a micro element according to the first embodiment of the present invention, As shown in Fig. 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • FIG. 3 ( 3) and FIG. 4 (see FIG. 3) in which the micro element 200 is adhered to the one surface 211 of the transfer film 210 with the first adhesive area 230,
  • the microdevice 200 can be bent together with the transfer film 210 by pressing the other surface 212 of the four-
  • the bending of the micro element 200 in the state of being bonded to the electrification film 210 can be continuously performed when the adhesion force between the micro element 200 and the transfer film 210 is greater than the stiffness of the micro element 200, At this time, the first bonding area 230 may be maintained (see FIG. 3).
  • the pressing portion 240 when the pressing portion 240 is positioned at the center portion of the micro element 200 and the transfer film 210 is bent around the pressing portion 240, the micro element 200 and the transfer film 210 ) Can be reduced inward from both side edges.
  • the bonding area between the micro element 200 and the transfer film 210 can be reduced to a second bonding area 235 smaller than the first bonding area 230 (see FIG. 3 (and FIG. 4 ).
  • the bonding area can be reduced and the bonding strength can be reduced.
  • the pressing portion 240 is provided so as to extend in the width direction of the transfer film 210, that is, as shown in FIG. 3, and the transfer film 210 is bent on the basis of the V axis.
  • the film 210 is bent in the longitudinal direction, i.e., in the X-axis direction 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • the pressing portion 240 may be provided to extend in the longitudinal direction of the transfer film 210, that is, the X axis direction.
  • the transfer film 210 may be bent on the basis of the axial direction, and then bent again on the basis of the X-axis direction.
  • the area of adhesion between the micro- May have a smaller area 236 than area 235
  • the micro device 200 bonded to the transfer film 210 with the first bonding area 230 may be provided on a source substrate (not shown) before the transfer film 210 is picked up).
  • the source substrate In addition, it can be expanded to include film.
  • the attachment step (and 20) may be a step in which the micro device is detached from the transfer film and attached to the target substrate.
  • the micro element 200 To the target substrate 250 may be less than the pressure conventionally used to press the microspheres to the target substrate.
  • the target substrate 250 may be a substrate on which the micro device 200 is finally mounted.
  • the target substrate 250 may have an electrode 251 on one side and the micro device 200 may be attached to the electrode 251 of the target substrate 250 so as to be electrically connected.
  • solder may be provided between the electrodes 251 of the micro device 200 and the target substrate 250.
  • FIG. 5 is a view illustrating an example of a micro-element transferring apparatus according to the first embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of the micro- FIG. 2 is a view showing an example of a pressing unit of a micro-device transferring apparatus according to a first embodiment of the present invention.
  • the transfer film will be described with respect to the feed direction or the flow direction, with the front side in the flow direction defined as the front end / front end and the rear side in the flow direction defined as the rear end / rear end.
  • the micro-device transfer device may include supports 301 and 302 and a pusher 340.
  • the supporting portions 301 and 302 may be spaced apart from each other along the longitudinal direction of the transferred transfer film 310.
  • the micro-elements 300 may be bonded to one side of the transfer film 310 with a first adhesive area.
  • the supporting portions 301 and 302 can closely support the other surface of the transfer film 310.
  • the supports 301 and 302 may be rollers.
  • the transfer film 310 may be supplied from the supply roller 305 toward the collection roller 306 and the transfer film 310 may be provided with a microcomponent 300 at a point before reaching the pressing portion 340. [ It can be adhered with an adhesive area.
  • the pressing portion 340 may be provided between the support portions 301 and 302. [ The pressing portion 340 may be formed to extend in the width direction of the transfer film 310 and may be in close contact with the other surface of the transfer film 310. The upper end of the pressing portion 340 is pressed against the supporting portions 301 and 301 to which the transfer film 310 is closely attached so that the transfer film 310 is pressed by the pressing portion 340 and bent in convex shape toward the micrometer 300. [ 302). ≪ / RTI >
  • the pressing unit 340 may be reciprocated in the horizontal direction.
  • the micro-device transfer apparatus may further include a transfer unit 360 for moving the pressing unit 340 in the horizontal direction.
  • the transfer unit 360 may have a rotation shaft 361, a horizontal guide 362, and a slider 363.
  • the rotary shaft 361 can be vertically coupled to the lower center of the pressing portion 340; And can be rotated in the horizontal direction together with the pressing portion 340.
  • the pressing portion 340 is formed on the X- 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • the pressing portion 340 extending in the width direction of the transfer film 310 may be rotated about the rotation axis so as to be arranged in a shape extending in the longitudinal direction or the feeding direction of the electrification film.
  • the horizontal guide 362 may be provided in the X axis direction, that is, in the feeding direction of the transfer film 310.
  • the slider 363 may be reciprocated along the horizontal guide 362 and the rotary shaft 361 may be coupled to the slider 363. Accordingly, when the slider 363 is reciprocated along the guide guide 362, the pressing portion 340 can also be reciprocated in the feeding direction of the transfer film 310.
  • 310 may sequentially have a low bonding area at the first bonding area and a low 12 bonding area.
  • the target substrate 350 is provided on the upper side of the micro-device 300, and the pressing portion 350 is provided on the upper side of the micro-
  • the microdevice 300 may be bonded to the target substrate 350 if the virtual orientation of the microdevice 300 is changed to be equal to the bottom height of the target substrate 350 as the transfer film 310 is pressed by the substrate 340 have. That is, the micro device 300 can be separated from the transfer film 310 and attached to the target substrate 350.
  • micro-element transfer process using the micro-element transfer process according to this embodiment will be described with reference to FIG.
  • the target substrate 350 may be in a fixed state.
  • the pressing portion 340 may be positioned on the lower left side of the target substrate 350.
  • the slider 363 is moved along the horizontal guide 362 Can be moved in the right direction.
  • the pressing portion 340 is moved in the rightward direction while pushing up the transfer film 310 to bend it, and the black element 300 can be sequentially attached to the target substrate 350.
  • the lower surface of the target substrate 350 is provided with an electrode (not shown) corresponding to an electrode 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • An electrode (not shown), and a solder for electrically connecting the two electrodes.
  • a mount 370 for fixing the target substrate 350 may be provided so that the target substrate 350 is stably fixed.
  • micro device electronic device can further include an additional process together with the above-described transfer process.
  • the transfer film 310 may be first bent at the front end of the target substrate 350 in a state where the distance between the supporting portions 301 and 302 is longer.
  • the pressing portion 340 may extend in the X axis direction, that is, the longitudinal direction of the transfer film 310. In this state, the pressing portion 340 can be reciprocated in the axial direction, that is, in the width direction of the transfer film 310.
  • the micro-device transfer device includes an additional horizontal guide (not shown) provided to extend in the axial direction to guide the slider 363 to be moved in the axial direction, or a horizontal guide 362 ) In the axial direction.
  • the pressing portion 340 may be extended in the axial direction, that is, the width direction of the transfer film 310, and may be reciprocated in the length direction of the transfer film 310. Accordingly, the contact surface area of the micro device 300 can be made smaller, and the adhesion between the micro device 300 and the target substrate 350 can be made more stable.
  • the micro-element transfer device includes a first support portion 401, a second support portion 402, a transition portion 441, a third support portion 403, a fourth support portion 404, A transfer part 442, and a pressing part 443.
  • the first supporting part 401 may be provided at the front end of the element providing member on which the micro element 400 is mounted based on the feeding direction of the transferred transfer film 410.
  • the element-providing member corresponds to a means for providing a micro element to the transfer film 410, for example, the source substrate 415 or the carrier film 570 or 670 corresponds to the element-providing member 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • a source substrate 415 may be provided as an element-providing member as shown in Fig. .
  • the transfer film 410 may be fed from the feed roller 405 to the withdrawal roller 406.
  • the second support portion 402 may be provided at the rear end of the source substrate 415.
  • the second support portion 402 can support one side of the transfer film 410 together with the first support portion 401 so that the transfer film 410 passes over the upper side of the source substrate 415.
  • the transition portion 441 may be provided between the first support portion 401 and the second support portion 402.
  • the transition portion 441 may be provided on the upper side of the transfer film 410.
  • the transition element 441 can press the transfer film 410 in the direction of the source substrate 415 so that the micro element 400 of the source substrate 415 has a first adhesion area .
  • the third support portion 403 may be provided at a front end of the target substrate 450 provided at the rear end of the source substrate 415.
  • the fourth support part 404 may be provided at the rear end of the target substrate 450.
  • the fourth support part 404 can support one side of the transfer film 410 with the third support part 403 so that the transfer film 410 passes over the upper side of the target substrate 450.
  • the transfer portion 442 can be provided between the third support portion 403 and the fourth support portion 404.
  • the transfer portion 442 may be provided on the upper side of the transfer film 410.
  • the transfer section 442 can press the transfer film 410 in the direction of the target substrate 450 so that the micro devices 400 bonded to the transfer film 410 are separated from the transfer film 410, (Not shown).
  • the pressing portion 443 may be provided between the second support portion 402 and the third support portion 403. [ The pressing portion 443 may be provided on the upper side of the transfer film 410. The pressing portion 443 presses the transfer film 410 so that the transfer film 410 is bent so as to be convex in the direction in which the micro device 400 is attached. The contact area between the micro device 400 and the transfer film 410 may be reduced to a second adhesion area smaller than the first adhesion area.
  • the second support portion 402 and the third support portion 403 can be moved downward and upward 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • the second support portion 402 and the third support portion 403 can move down so that the micro device 400 is not caught when the micro device 400 is inserted therein (see FIG. 7).
  • the micro-device 400 can move up and down so as to be in close contact with one surface of the transfer film 410.
  • the uppermost portion of the second support portion 402 and the third support portion 403 are positioned higher than the lower end portion of the pressing portion 443 when the second support portion 402 and the third support portion 403 move up .
  • the pressing portion 443 can move downward or upward.
  • the lower end of the pressing portion 443 is positioned lower than the uppermost portion of the second supporting portion 402 and the third supporting portion 403 And can be moved in the downward direction as much as possible.
  • the transfer film 410 can be bent so as to be convex in the direction of the microdevice 400 by the pressing portion 443 and the microdevice 400 can be bent between the microdevice 400 and the transfer film 410 The bonding area can be reduced.
  • FIG 8 is an exemplary view showing a micro-element transferring apparatus according to a third embodiment of the present invention.
  • the step of reducing the area of adhesion between the micro element and the transfer film through the bending of the transfer film and the step of attaching the micro element with the smaller area of adhesion to the target substrate can be performed individually.
  • the micro-device transfer apparatus may include a transition portion 541, a transfer portion 542, and a pressurizing portion 543.
  • the transition portion 541 may be provided to closely support one side of the supplied transfer film 510.
  • the transfer film 510 may be fed from the feed roller 505 toward the collection roller 506.
  • the transition portion 541 may be provided below the element-providing member to be supplied.
  • the element providing member corresponds to a means for providing a micro element to the transfer film 410, for example, the source substrate 415 or the carrier film 570 or 670 may correspond to the element providing member
  • a carrier film 570 may be provided as an element providing member.
  • the transition portion 541 may be provided below the supplied carrier film 570 and may be provided on the lower surface of the carrier film 570 to the transfer film 510 adhered to the transition portion 541 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • the transfer film 510 can be pressed toward the micro device 500 so that the attached micro device 500 is adhered.
  • the micro element 500 attached to the lower surface of the carrier film 570 can be separated from the carrier film 570 and attached to the other surface of the transfer film 510. [ At this time, the micro device 500 may be attached to the transfer film 510 with a first adhesive area.
  • the transfer portion 542 may be spaced apart from the transition portion 541 along the feeding direction of the transfer film 510.
  • a target substrate 550 may be provided below the transfer section 542 and the transfer section 542 may be in close contact with one surface of the transfer film 510 to press the transfer film 510 toward the target substrate 550 have.
  • the pressing portion 543 may be provided between the transition portion 541 and the transfer portion 542.
  • the pressing portion 543 may press one surface of the transfer film 510 to bend the transfer film 510 so as to be convex in the direction in which the micro device 500 is attached. Pressure section. A part of the contact surface of the micro device 500 is separated from the transfer film 510 so that the adhesion area between the micro device 500 and the transfer film 510 is smaller than the first adhesion area, .
  • the transferring portion 542 is separated from the microelectronic device 500 supplied from the transferring film 510 in a state in which the transferring film 510 is pressed toward the target substrate 550 and the bonding area of the second bonding surface is reduced It can be attached to the target substrate 550 at the time of overactuation.
  • the target substrate 550 can be conveyed in the feeding direction of the transfer film 510 supplied in close contact with the pressing portion 543 and the transfer portion 542, and the transfer speed of the target substrate 550 is The feed rate, and the position where the micro-device 500 is attached to the target organs 550, and the like.
  • FIG. 9 is a view showing an example of a micro-element transferring apparatus according to a fourth embodiment of the present invention.
  • the step of reducing the area of adhesion between the micro element and the transfer film through the bending of the transfer film and the step of adhering the micro element with the smaller area of adhesion to the target substrate can be performed at the same time. 3 embodiment.
  • the capping device may include a transition portion 641, a support portion 601, and a pressing portion 642.
  • the transition portion 641 may be provided to closely support one surface of the transfer film 610 supplied from the supply roller 605 toward the recovery roller 606.
  • the transition portion 641 may be provided below the supplied carrier film 670 and may include a micro element 600 attached to the lower surface of the carrier film 670 to a transfer film 610 which is in close contact with the transition portion 641
  • the transfer film 610 can be pressed in the direction of the microdevice 600. As shown in FIG.
  • the micro device 600 attached to the lower surface of the carrier film 670 can be separated from the carrier film 670 and attached to the other surface of the transfer film 610. [ At this time, the micro device 600 may be attached to the transfer film 610 with a first adhesive area.
  • the supporting portion 601 is moved along the feeding direction of the transfer film 610 with the transition portion 641 and is brought into close contact with the other surface of the transfer film 610 to transfer the transfer film 610 together with the transition portion 641 It can be supported to be fed in a tightly pulled state.
  • the pressing portion 642 is provided between the transition portion 641 and the supporting portion 601 and presses the other surface of the transfer film 610 so that the transfer film 610 is convexed in the direction in which the micro device 600 is attached. Can be bent.
  • the pressing portion 642 is brought into close contact with the one surface of the transfer film 610 so as to face the transfer film 610 in the direction of the target substrate 650 Lt; / RTI >
  • the pressing portion 642 is formed so that a part of the contact surface of the micro device 600 is separated from the transfer film 610, and a bonding area between the micro device 600 and the transfer film 610 is smaller than a first bonding area .
  • the pushing portion 642 pushes the microdevice 600 toward the target substrate 650 so that the microdevice 600 is detached from the electrification film 610 and attached to the target substrate 650) can do.
  • the pressing portion 642 may be formed with a radius of curvature smaller than that of the pressing portion 642.
  • an additional pressing portion 642 is provided between the pressing portion 642 and the supporting portion 601.
  • a support 602 may be provided. Additional support 602 may be provided 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • the pressing portions 642 and 642 may be realized by appropriately selecting a shape that is a rotating roller shape or a non-rotating shape.
  • a method of making the area of adhesion between the micro element and the transfer film small at a second adhesion area smaller than the first area of adhesion as described with reference to FIGS. 1 to 4, And the transfer film may be bent so as to be concave in the direction in which the micro device is attached.
  • FIG 10 is an exemplary view showing a process that can be applied to the microelectronic electronic method according to the second embodiment of the present invention.
  • the transfer film 1210 in the bonding area reducing step, can be bent so as to be recessed in the direction in which the device 200 is attached.
  • the bending of the transfer film 1210 may be performed by pressing the surface to which the micro element 200 is attached on the transfer film 1210 to a pressing portion (not shown). That is, when the transfer film 1210 is bent by the pressing portion to be recessed in the direction in which the micro device 200 is attached, some contact surfaces of the micro device 200 may be separated from the transfer film 1210.
  • the adhesive area between the micro element 200 and the transfer film 1210 can be reduced to a second adhesive area 1235 smaller than the first adhesive area 1230. [ For example, when the portion bent in the transfer film 1210 becomes the central portion of the micro element 200, the transfer film 1210 and the micro element 200 first fall off from the inside portion of the micro element 200, It can fall in the edge direction.
  • the pressing portion is located between the micro elements 200 provided in the transfer film 1210 in the form of an array and presses the transfer film 1210 or the outside of the transfer film 1210 where the micro element 200 is not provided So that the transfer film 1210 can be pressed.
  • the micro element substrate can be manufactured, and the micro element transfer apparatus can be implemented so that this method is applied. 2019/125013 1 »(: 1 ⁇ 1 ⁇ 2018/016357
  • target substrate 250, 350, 450, 550, 650: target substrate

Abstract

Disclosed are a micro-device transfer method and a micro-device transfer apparatus. A micro-device transfer method, according to one embodiment of the present invention, comprises: a bonding area reduction step for bending a transfer film to which a bonding portion of a micro-device is bonded with a first bonding area, so that a portion of the micro-device is separated from the transfer film and the bonding portion is reduced to a second bonding area which is smaller than the first bonding area; and a bonding step for bonding, to a target substrate, the micro-device having the second bonding area while being separated from the transfer film.

Description

【명세서】  【Specification】
【발명의 명칭】  Title of the Invention
마이크로소자전사방법 및마이크로소자전사장치  Micro-device transfer method and micro-device transfer device
【기술분야】  TECHNICAL FIELD
본발명은마이크로소자전사방법, 이에 의해 제조되는마이크로소자기판 및마이크로소자전사장치에 관한것으로,마이크로소자를기판등에 전사하는마 이크로소자전사방법 및마이크로소자전사장치에 관한것이다.  BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a micro element transfer method, a micro element substrate and a micro element transfer apparatus manufactured thereby, and a micro element transfer method and a micro element transfer apparatus for transferring micro elements to a substrate or the like.
【배경기술】  BACKGROUND ART [0002]
반도체 공정을 이용하는고성능소자들은웨이퍼를기반으로 한코팅 공정, 노광공정 , 현상공정, 식각공정, 박막공정, 이온주입 공정, 산화공정, 확산공 정 등다양한방법을통해 웨이퍼 기판상에 구현이 된다.  High-performance devices using semiconductor processes are implemented on a wafer substrate through various methods such as wafer-based coating, exposure, development, etching, thin-film processing, ion implantation, oxidation, and diffusion.
이는다이싱 (di cing) , 다이 본딩 (die bonding) , 와이어 본딩 (wi re bonding) , 몰딩 (molding) 등의 패키징 공정을통하여 부품의 형태를 가지게 된다. 우리가흔 히 볼수 있는반도체, 메모리 칩 (chip)등이 이러한과정을통하여 생산이 이루어 지게된다.  It has the form of a part through a packaging process such as dicing, die bonding, wire bonding, and molding. Semiconductors, memory chips, etc., which we can see for a long time, are produced through this process.
한편, 인쇄 전자기술을기반으로유연한소자부품을제작하고자하는시도 가이루어지고 있으며, 주로디스플레이, RFID, 태양광발전등 일부제품군에 대해 적용하는사례가등장하고 있다. 인쇄 전자기술의 경우 반도체 공정에 비해 비교 적 낮은온도이거나상온에서 이루어지는 것이 일반적이며, 코팅 공정, 프린팅 공 정, 패터닝 공정 등에 의해 소자가 제작되며 배선 및 전극 형성을 위한후공정과 접합이나절단등의 과정을거쳐 유연한부품을얻을수있게 된다.  On the other hand, attempts have been made to fabricate flexible device parts based on printing electronic technology, and examples are being applied mainly to some product groups such as display, RFID, and solar power generation. In printing electronic technology, it is generally performed at a relatively low temperature or at room temperature compared to a semiconductor process. The device is manufactured by a coating process, a printing process, a patterning process, and the like for post- The flexible parts can be obtained through the process.
실제로소자를 이용하여 디바이스를제작하는경우, 배선과그 이외의 용도 를갖는 공간이 필요하게 된다. 즉 소자와소자사이에 공간이 필요하게 되는데, 웨이퍼 상에 모든소자를한꺼번에 전사하게 되면 이러한소자와소자사이의 공간 이 형성될수없기 때문에 디바이스제작에 어려움이 따른다.  When a device is actually fabricated using a device, a space having wiring and other uses is required. In other words, a space is required between the device and the device. If all the devices are transferred all at once on the wafer, space between the device and the device can not be formed.
또한, 디바이스가단일 종류의 소자로 이루어진 경우가아니라여러 종류의 소자들로 이루어지는 경우에는, 하나의 소자를 전사한 후 그 부근에 다른 소자를 전사하여야 한다. 이러한 예시에서 알수 있는 바와 같이, 디바이스 제작을 위한 2019/125013 1»(:1^1{2018/016357 In addition, in the case where the device is composed of a plurality of kinds of elements instead of a single type of element, one element must be transferred and then transferred to another element. As can be seen from this example, 2019/125013 1 »(: 1 ^ 1 {2018/016357
소자전사공정에 있어서 소자를선택적으로전사하는과정이 필요한경우가많다. 일 예로마이크로내!)를 회로 기판의 솔더 위로 전사하는 기술로는 각각의 마이크로나:!)룰 진공 척( ±)을 이용하여 옮기는 방법을사용하고 있다. 그러나 이러한방식은抑, 則[),
Figure imgf000003_0001
등의 화소수가많은디스플레이를 만들기 위해서는 오랜시간이 요구될수있다.
A process of selectively transferring devices in a device transfer process is often required. As an example of transferring technology to a solder on a circuit board, we use a vacuum chuck ( 1 « ±) for transferring each micron. However, this approach is based on the constraints,
Figure imgf000003_0001
It may take a long time to produce a display having a large number of pixels.
또한, 이러한방식에서는마이크로 1고1)에 압력을가해서 마이크로내1)가솔 더에 부착되도록하고 있는데, 마이크로 1고1)가소형화및 박형화되고 있는현재 개 발추세에서는, 이러한하중에 의해 마이크로 1止0가파손될가능성이 높아질수 있 다· Also, in this method, the pressure is applied to the micro-scale 1) to be attached to the micro-scale 1) gas solder. In the present development trend, micro-scale 1) there is zero can increase the likelihood of damage,
【발명의 상세한설명】  DETAILED DESCRIPTION OF THE INVENTION
【기술적 과제】  [Technical Problem]
본발명의 실시예들은마이크로소자의 파손가능성을낮추고마이크로소자 의 전사공정 효율이 개선될수 있는마이크로소자전사방법 및 마이크로소자전 사장치를제공하고자한다.  Embodiments of the present invention provide a micro element transfer method and a micro element transfer apparatus capable of reducing the possibility of breakage of a micro element and improving the transfer process efficiency of the micro element.
【기술적 해결방법】  [Technical Solution]
본발명의 일실시예에 따른마이크로소자전사방법은, 마이크로소자의 접 착부위가제 1접착면적으로접착된 전사필름을벤딩하여 상기 마이크로소자의 일부 분이 상가전사필름에서 떨어지고상기 접착부위가상기 제 1접착면적보다작은제 2 접착면적으로축소되는 접착면적 축소단계 및 상기 제 2접착면적을 가지는상기 마 이크로 소자가상기 전사필름에서 분리되면서 타겟기판에 부착되는부착단계를 포 함한다.  A method of transferring a micro-device according to an embodiment of the present invention is a method of transferring a micro-device according to an embodiment of the present invention, wherein a transfer portion of a micro- 1 < / RTI > area smaller than the adhesion area, and an attachment step in which the micro-device having the second adhesion area is attached to the target substrate while being separated from the transfer film.
상기 접착면적 축소단계에서, 상기 전사필름은상기 마이크로소자가부착된 일면이 볼록해지도록 벤딩되어 상기 마이크로 소자의 상기 접착부위가가장자리부 터 내측방향으로축소될수있다.  In the step of reducing the adhesion area, the transfer film may be bent so that one side of the transfer film adhered to the micro device is convex so that the adhesion area of the micro device may be reduced inward from the edge.
상기 접착면적 축소단계에서, 상기 전사필름은싱;기 마이크로소자가부착된 일면이 오목해지도록벤딩되어 상기 마이크로소자의 상기 접착부위가내측부터 가 장자리 방향으로축소될수있다.  In the step of reducing the adhesion area, the transfer film may be bent so that one side of the transfer film adhered to the microfluidic device may be recessed, so that the adhesive site of the microfluidic device may be contracted from the inside to the proximal position.
상기 접착면적 축소단계에서, 상기 전사필름은상기 전사필름의 길이방향 및 폭방 2019/125013 1»(:1^1{2018/016357 In the step of reducing the adhesion area, the transfer film has a length direction and a width direction of the transfer film 2019/125013 1 »(: 1 ^ 1 {2018/016357
향중적어도어느하나의 방향으로벤딩될수있다. And may be bent in at least one of the directions.
한편, 본발명의 일실시예에 따른마이크로소자전사장치는, 일면에 마이크 로소자가제 1접착면적으로접착되는상기 전사필름을지지하는지지부및 상기 전 사필름의 폭방향으로 연장 형성되며 , 상기 전사필름의 타면을가압하여 상기 전사 필름의 상기 일면이 볼록해지도록 벤딩함으로써, 상기 마이크로소자의 일부분을 상기 전사필름으로부터 떨어뜨리고 상기 마이크로 소자와상기 전사필름간의 접착 부위를 상기 제 1접착면적보다 작은 제 2접착면적으로 축소하는 가압부를 포함하며, 상기 가압부는상기 전사필름에 상기 제 2접착면적으로 접착된 상기 마이크로소자 가상기 전사필름에서 분리되면서 타겟기판에 부착되도록상기 전사필름을상기 타 겟기판방향으로가압한다.  Meanwhile, the micro-element transfer device according to an embodiment of the present invention may include a supporting portion and a supporting portion, which are formed on one surface of the supporting portion and extended in the width direction of the transferring film, A part of the micro device is dropped from the transfer film by pressing the other surface of the film to bend the one side of the transfer film so as to be convex so that the adhesion area between the micro device and the transfer film is made smaller than the first adhesion area And the pressing portion separates the transfer film from the micro device virtual transfer film adhered to the transfer material film with the second adhesion area so as to be attached to the target substrate, .
상기 지지부는한쌍으로구비되고상기 전사필름의 상기 타면을지지하며 , 상기 가압부는상기 한쌍의 지지부사이에 위치되며, 상기 한쌍의 지지부보다상 기 타겟기판방향으로돌출배치되어 상기 전사필름을벤딩할수있다.  The supporting portion is provided in a pair and supports the other surface of the transfer film, the pressing portion is positioned between the pair of supporting portions, and the transfer film is bent and can be bent so as to protrude from the pair of supporting portions toward the target substrate .
상기 가압부는 연장방향이 상기 전사필름의 폭방향에서 상기 잔사필름의 길 이방향이 되도록 회전 가능하고, 상기 전사필름의 폭방향 또는 길이방향 중 상기 연장방향에 수직한방향으로이동가능할수있다.  The pressing portion is rotatable so that the extending direction is the direction opposite to the direction of the residual film in the width direction of the transfer film, and can be moved in a direction perpendicular to the extending direction of the width direction or the length direction of the transfer film.
상기 전사필름의 흐름방향에 따라상기 가압부의 전단에 배치되고, 소자제공 부재에 구비된상기 마이크로소자가상기 소자제공부재로부터 분리되면서 상기 전 사필름의 상기 일면에 상기 제 1접착면적으로 접착되도록 상기 전사필름의 타면을 상기 소자제공부재 방향으로가압하는전이부를더 포함할수있다.  Wherein the micro element is disposed on a front end of the pressing part along the flow direction of the transfer film, and the micro element provided on the element providing member is separated from the element providing member, And a transition portion for pressing the other surface of the transfer film toward the element-providing member.
상기 지지부는 상기 흐름방향에 따라상기 가압부의 후단에 배치되고 상기 전사필름의 상기 타면을지지하며, 상기 가압부는상기 전이부및 상기 지지부보다 상기 타겟기판방향으로돌출배치되어 상기 전사필름을벤딩할수있다.  The support portion is disposed at a rear end of the pressing portion along the flow direction and supports the other surface of the transfer film, and the pressing portion is disposed to protrude from the transition portion and the support portion toward the target substrate to bend the transfer film .
상기 흐름방향에 따라상기 가압부의 후단및 상기 지지부의 전단에 배치되 고, 상기 전사필름의 상기 일면을지지하며, 상기 타겟기판으로부터 상기 가압부보 다더 멀리 배치되어 상기 전사필름을벤딩하는추가지지부를더 포함할수있다. 상기 소자제공부재는상기 마이크로소자가구비되는소스기판또는 캐리어 필름일수있다. 2019/125013 1»(:1^1{2018/016357 A further supporting portion disposed at a rear end of the pressing portion and at a front end of the supporting portion in accordance with the flow direction and supporting the one surface of the transfer film and being further away from the target substrate than the pressing portion and bending the transfer film, You can include it. The element-providing member may be a source substrate or a carrier film on which the micro device is mounted. 2019/125013 1 »(: 1 ^ 1 {2018/016357
한편, 본 발명의 다른 실시예에 따른 마이크로 소자 전사장치는, 마이크로 소자가 구비된 소자제공부재로부터 상기 마이크로 소자가분리되면서 전사필름의 일면에 제 1접착면적의 접착부위를가지며 접착되도록상기 전사필름의 타면을상기 소자제공부재 방향으로 가압하는 전이부, 상기 전사필름의 흐름방향에 따라 상기5 전이부의 후단에 배치되고, 상기 전사필름의 타면을 가압하여 상기 전사필름의 상 기 일면이 볼록해지도록 벤딩함으로써, 상기 마이크로 소자의 상기 접착부위 일부 분을상기 전사필름으로부터 떨어뜨려서 상기 제 1접착면적보다작은제 2접착면적으 로축소하는가압부 및 상기 흐름방향에 따라상기 가압부의 후단에 배치되고, 상 기 가압부를거쳐 상기 접착부위가상기 제 2접착면적으로축소된상기 마이크로소0 자가상기 전사필름에서 분리되면서 타겟기판에 부착되도록 상기 전사필름을 상기 타겟기판방향으로가압하는전사부를포함한다. Meanwhile, in the micro-element transfer device according to another embodiment of the present invention, the micro-elements are separated from the element-providing member provided with micro-elements, and the transfer film is transferred onto one side of the transfer film, And a second transfer unit which is disposed at a rear end of the fifth transfer unit in accordance with the flow direction of the transfer film and which presses the other surface of the transfer film so that one side of the transfer film is convex Bending a portion of the adhesive portion of the micro element from the transfer film to reduce the adhesive area to a second adhesive area smaller than the first adhesive area, Wherein the microparticle having the adhesive area reduced to the second adhesive area through the pressure- And a transfer unit for pressing the transfer film toward the target substrate so as to be attached to the target substrate while being separated from the film.
상기 흐름방향에 따라상기 소자제공부재의 전단에 구비되어 상기 전사필름 을지지하는 제 1지지부, 상기 제 1지지부와의 사이에 상기 전이부가위치되도록상 기 소자제공부재의 후단에 구비되고, 상기 제 1지지부와함께 상기 전사필름을지지5 하는 제 2지지부, 상기 타겟기판의 전단에 구비되어 상기 전사필름을 지지하는 제 3 지지부 및 상기 제 3지지부와의 사이에 상기 전사부가위치되도록 상기 타겟기판의 후단에 구비되고, 상기 제 3지지부와 함께 상기 전사필름을 지지하는 제 4지지부를 더 포함할수있다.  A first support provided at a front end of the element providing member along the flow direction to support the transfer film and a rear end of the element providing member so that the transition is positioned between the first support and the first support, And a second supporting part for supporting the transfer film together with the first supporting part, a third supporting part provided at a front end of the target substrate for supporting the transfer film, and a second supporting part provided at the front end of the target substrate, And a fourth support part provided at the rear end and supporting the transfer film together with the third support part.
상기 제 2지지부 및 제 3지지부는상기 전사필름의 상기 일면을지지하며 , 상0 기 전사필름에 접착된상기 마이크로소자가진입되는상황에서 상기 전사필름으로 부터 이격되도록하강이동되고, 상기 마이크로소자가통과된상황에서 상기 전사 필름에 밀착되도록상승이동될수있다.  The second supporting portion and the third supporting portion support the one side of the transfer film and are moved downward to be spaced apart from the transfer film in a state in which the micro element bonded to the image transfer film enters, The film can be moved up so as to be in close contact with the transfer film in a state in which it is passed.
상기 전사필름에 밀착되도록상승이동된상기 제 2지지부및상기 제 3지지부 의 최상부는상기 가압부의 하단부보다더 높은위치가될수있다. The uppermost portion of the second support portion and the third support portion which are moved upward to be brought into close contact with the transfer film may be positioned higher than the lower end portion of the pressurizing portion.
5 상기 가압부의 하단부는 상승 이동된 상기 제 2지지부 및 상기 제 3지지부의 상기 최상부보다낮은위치가되도록상하방향으로이동될수있다. 5 The lower end of the pressing portion can be moved up and down so as to be positioned lower than the uppermost portion of the second supporting portion and the third supporting portion that have been moved up.
【발명의 효과】  【Effects of the Invention】
본발명의 실시예들은마이크로소자의 파손가능성을낮추고마이크로소자 2019/125013 1»(:1^1{2018/016357 Embodiments of the present invention reduce the possibility of breakage of the micro- 2019/125013 1 »(: 1 ^ 1 {2018/016357
의 전사공정 효율이 개선될수 있는마이크로소자전사방법 및 마이크로소자전 사장치를제공할수있다. A transfer method of a micro device and a transfer device of a micro device in which the transfer process efficiency of the transfer device can be improved can be provided.
【도면의 간단한설명】  BRIEF DESCRIPTION OF THE DRAWINGS
도 1은본발명의 제 1실시예에 따른마이크로소자전사방법을나타낸흐름 도이다.  1 is a flow chart showing a method of transferring a micro element according to a first embodiment of the present invention.
도 2는도 1의 공정예시도이다.  Fig. 2 is an example of the process of Fig. 1. Fig.
도 3은본발명의 제 1실시예에 따른마이크로소자전사방법에 적용될수있 는공정을나타낸예시도이다.  FIG. 3 is an exemplary view showing a process that can be applied to the micro-element transfer method according to the first embodiment of the present invention.
도 4는본발명의 제 1실시예에 따른마이크로소자전사방법이 적용된 마이 크로소자와전사필름의 접착면적을나타낸사진이다.  4 is a photograph showing an area of adhesion between a micro element and a transfer film to which a micro element transfer method according to the first embodiment of the present invention is applied.
도 5는본발명의 제 1실시예에 따른마이크로소자전사장치를나타낸 예시 도이다.  5 is an exemplary view showing a micro-element transferring apparatus according to the first embodiment of the present invention.
도 6은본발명의 제 1실시예에 따른마이크로소자전사장치의 가압부를나 타낸예시도이다.  6 is a view showing an example of a pressing portion of a micro-device transferring apparatus according to the first embodiment of the present invention.
도 7은본발명의 제 2실시예에 따른마이크로소자전사장치를나타낸 예시 도이다.  7 is an exemplary view showing a micro-element transferring apparatus according to a second embodiment of the present invention.
도 8은본발명의 저ᅵ 3실시예에 따른마이크로소자전사장치를나타낸 예시 도이다.  FIG. 8 is a view showing an example of a micro-element transferring apparatus according to the third embodiment of the present invention.
도 9는본발명의 제 4실시예에 따른마이크로소자전사장치를나타낸 예시 도이다.  9 is a view showing an example of a micro-element transferring apparatus according to a fourth embodiment of the present invention.
도 10은 본 발명의 제 2실시예에 따른마이크로소자 전자방법에 적용될 수 있는공정을나타낸예시도이다.  10 is an exemplary view showing a process that can be applied to the microelectronic electronic method according to the second embodiment of the present invention.
【발명의 실시를위한 _최선의 형태】 _ _ Best mode for practicing the invention;
이하, 첨부한도면을참조하여 본발명의 실시예에 대하여 본발명이 속하는 기술분야에서 통상의 지식을가진자가용이하게 실시할수 있도록상세히 설명한 다.  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.
그러나본발명은여러 가지 상이한형태로구현될수있으며 여기에서 설명 하는실시예에 한정되지 않는다. 도면에서 본발명을명확하게 설명하기 위해서 설 2019/125013 1»(:1^1{2018/016357 The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, 2019/125013 1 »(: 1 ^ 1 {2018/016357
명과관계없는부분은생략하였으며, 명세서 전체를통하여 동일 또는유사한구성 요소에 대해서는동일한참조부호를붙였다. Parts not related to names are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.
본명세서에서 , 동일한구성요소에 대해서 중복된설명은생략한다.  In the present specification, duplicate descriptions are omitted for the same constituent elements.
또한본명세서에서, 어떤구성요소가다른구성요소에 '연결되어 ' 있다거나 속되어1 있다고 언급된 때에는, 그 다른구성요소에 직접적으로 연결되어 있거 나또는 접속되어 있을수도 있지만, 중간에 다른구성요소가존재할수도있다고 이해되어야할 것이다. 반면에 본 명세서에서, 어떤 구성요소가다른구성요소에 ’직접 연결되어’ 있다거나 ’직접 접속되어’ 있다고 언급된 때에는, 중간에 다른구 성요소가존재하지 않는것으로이해되어야할것이다. In addition, but also in the present specification, any configuration is the element is, when the "connection is" there or in the states that 1, itgeo is directly coupled to the other component or or connected to other components iteulsu, another element in between May be present. On the contrary, in this specification, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.
또한, 본명세서에서 사용되는용어는단지 특정한실시예를설명하기 위해 사용되는것으로써, 본발명을한정하려는의도로사용되는것이 아니다.  Furthermore, the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present invention.
또한본명세서에서, 단수의 표현은문맥상명백하게 다르게뜻하지 않는한, 복수의 표현을포함할수있다.  Also, in this specification, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise.
또한본명세서에서, ’포함하다’ 또는 ’가지다’ 등의 용어는명세서에 기재 된 특징, 숫자, 단계, 동작, 구성요소, 부품, 또는 이들을 조합한 것이 존재함을 지정하려는것일뿐, 하나또는그이상의 다른특징 , 숫자, 단계, 동작, 구성요소, 부품또는 이들을조합한 것의 존재 또는부가가능성을미리 배제하지 않는 것으 로이해되어야할것이다. Also, in this specification, the terms " comprises " or " having ", and the like, are used only to designate the presence of the features, numbers, steps, operations, elements, parts, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, or combinations thereof .
또한본명세서에서, 1및/또는’ 이라는용어는복수의 기재된항목들의 조합 또는복수의 기재된 항목들중의 어느항목을포함한다. 본 명세서에서, ^또는 는, ’ , 1, 또는 와 8모두1를포함할수있다. Also, in this specification, the term " 1 " and / or " includes any combination of a plurality of listed items or any of a plurality of listed items. In the present specification, " or " may include ', 1 , or both 8 and 1 .
도 1은본발명의 제 1실시예에 따른마이크로소자전사방법을나타낸흐름 도이고, 도 2는도 1의 공정.예시도이다. 도 1내지 도 2에서 보는바와같이, 마이 크로 소자 전사방법은 접착면적 축소단계 (와10) 그리고 부착단계 (와20)를 포함할 수있다. FIG. 1 is a flow chart showing a method of transferring a micro element according to a first embodiment of the present invention, and FIG. 2 is a process of FIG . Fig. As shown in FIGS. 1 and 2, the method of transferring a microcrystal may include a step of reducing the adhesion area (and 10) and an attaching step (and 20).
접착면적 축소단계 ( 10)는 마이크로 소자 (200)가 제 1접착면적 (230)으로 접 착되는전사필름 (210)이 마이크로소자 (200)가부착된 방향으로볼록해지도록 벤딩 되고, 마이크로 소자 (200)의 일부 접촉면이 전사필름 (210)으로부터 떨어져서 마이 2019/125013 1»(:1^1{2018/016357 The step of reducing the adhesion area 10 is performed such that the transfer film 210 to which the micro element 200 is bonded by the first adhesion area 230 is bent so as to be convex in the direction in which the micro element 200 is attached, 200 are detached from the transfer film 210, 2019/125013 1 »(: 1 ^ 1 {2018/016357
크로 소자 (200)와 전사필름 (210) 간의 접착면적이 제 1접착면적 (230)보다 작은 제 2 접착면적 (235)으로작아지는단계일수있다. The bonding area between the crosstalks 200 and the transfer film 210 may be reduced to a second bonding area 235 smaller than the first bonding area 230.
접착면적 축소단계 ( 10)에서, 마이크로 소자 (200)는 전사필름 (210)의 일면 (211)에 접착된 상태로 공급될 수 있다. 여기서, 마이크로 소자 (200)는 전사필름 (210)에 제 1접착면적 (230)으로접착된상태일수있다 (도 2의 ( 참조) .  In the adhesion area reduction step 10, the micro element 200 may be supplied while being adhered to one surface 211 of the transfer film 210. Here, the micro element 200 may be adhered to the transfer film 210 with a first adhesive area 230 (see FIG. 2).
그리고 전사필름 (210)은 마이크로 소자 (200)가부착된 방향으로볼록해지도 록 벤딩될 수 있다. 이러한 전사필름 (210)의 벤딩은 전사필름 (210)의 타면 (212)을 부분적으로가압할수있는가압부 (240)에 의해 이루어질수있다.  And the transfer film 210 may be bent so as to be convex in the direction in which the micro device 200 is attached. The bending of the transfer film 210 may be performed by a pressing portion 240 that can partly press the other surface 212 of the transfer film 210.
가압부 (240)에 의해 전사필름 (210)이 마이크로소자 (200)가부착된방향으로 볼록해지도록 벤딩되면 마이크로 소자 (200)의 일부 접촉면은 전사필름 (210)으로부 터 떨어질수있다.  When the transfer film 210 is bent to be convex in the direction in which the micro device 200 is attached by the pressing unit 240, some contact surfaces of the micro device 200 may be detached from the transfer film 210.
이를통해, 마이크로소자 (200)와전사필름 (210)간의 접착면적은제 1접착면 적 (230)보다 작은 제 2접착면적 (235)으로 작아질 수 있다. 예를 들어, 전사필름 (210)에서 벤딩되는부분이 마이크로소자 (200)의 중앙부분이 되는경우, 전사필름 (210)과 마이크로 소자 (200)는 마이크로 소자 (200)의 양측 모서리:부분에서부터 떨 어질수있다 (도 2의 0>)참조) .  Thus, the area of adhesion between the microdevice 200 and the transfer film 210 can be reduced to a second bonding area 235 smaller than the first bonding area 230. For example, when the bending portion of the transfer film 210 becomes a central portion of the micro element 200, the transfer film 210 and the micro element 200 are separated from both sides of the micro element 200: (Fig. 2, 0 >)).
마이크로 소자 (200)가 전사필름 (210)에 제 1접착면적 (230)으로 접착된 상태 에서, 전사필름 (210)이 벤딩되도록하여 마이크로소자 (200)와전사필름 (210) 간의 접착부위가제 1접착면적 (230)보다작은 제 2접착면적 (235)으로 작아지도록 함으로써, 마이크로 소자 (200)를 타겟기판 (250)에 부착하는 공정에서 마이크로 소자 (200)를 타겟기판 (250)으로 가압하는 압력을 낮출 수 있기 때문에, 마이크로 소자 (200)의 파손가능성을낮출수있다.  The transfer film 210 is bent so that the adhesive portion between the micro element 200 and the transfer film 210 is bonded to the transfer film 210 in a state where the micro element 200 is bonded to the transfer film 210 with the first bonding area 230. [ The microdevice 200 is pressed against the target substrate 250 in the step of attaching the microdevice 200 to the target substrate 250 by making the second bonding area 235 smaller than the first bonding area 230 The pressure can be lowered, so that the possibility of breakage of the micro element 200 can be reduced.
또한, 본발명의 일실시예에 따르면, 전사필름 (210)이 벤딩되도록하여 마이 크로 소자 (200)와 전사필름 (210) 간의 접착면적이 작아지도록 함으로써, 마이크로 소자 (200)가타겟기판 (250)으로부착되는수율을높일수있다.  According to an embodiment of the present invention, the area of adhesion between the micro element 200 and the transfer film 210 is reduced by bending the transfer film 210, ) Can be increased.
한편, 도 3은본발명의 제 1실시예에 따른마이크로소자전사방법에 적용될 수 있는공정을나타낸 예시도이고, 도 4는본 발명의 제 1실시예에 따른마이크로 소자전사방법이 적용된마이크로소자와전사필름의 접착면적을나타낸사진이다. 2019/125013 1»(:1^1{2018/016357 FIG. 3 is a view illustrating a process that can be applied to the micro-element transfer method according to the first embodiment of the present invention. FIG. 4 is a cross-sectional view of a micro element according to the first embodiment of the present invention, As shown in Fig. 2019/125013 1 »(: 1 ^ 1 {2018/016357
전사필름 (210)의 일면 (211)에 마이크로 소자 (200)가 제 1접착면적 (230)으로 접착된상태에서 (도 3의 (3) 및 도 4의 ( 참조), 가압부 (240)가전사필름 (210)의 타면 (212)을 가압하면 마이크로 소자 (200)는 전사필름 (210)과 함께 벤딩될 수 있 다. 3 ( 3) and FIG. 4 (see FIG. 3) in which the micro element 200 is adhered to the one surface 211 of the transfer film 210 with the first adhesive area 230, The microdevice 200 can be bent together with the transfer film 210 by pressing the other surface 212 of the four-
마이크로소자 (200)가전사필름 (210)에 접착된상태에서 함께 벤딩되는것은 마이크로 소자 (200)와 전사필름 (210) 간의 접착력이 마이크로 소자 (200)의 강성보 다큰경우에 지속적으로발생될수 있으며, 이때는제 1접착면적 (230)이 유지될수 있다 (도 3의 ( 참조) .  The bending of the micro element 200 in the state of being bonded to the electrification film 210 can be continuously performed when the adhesion force between the micro element 200 and the transfer film 210 is greater than the stiffness of the micro element 200, At this time, the first bonding area 230 may be maintained (see FIG. 3).
그러다가, 전사팔름 (210)의 벤딩 정도가점차증가되면, 마이크로소자 (200) 와전사필름 (210)의 강성 차이로 인해 마이크로소자 (200)와전사필름 (210)의 접착 부위가떨어지게 된다.  When the degree of bending of the transfer elbow 210 is gradually increased, the adhesion portion between the micro element 200 and the transfer film 210 is deteriorated due to the difference in rigidity between the micro element 200 and the transfer film 210.
즉, 마이크로소자 (200)와전사필름 (210)간의 접착력이 마이크로소자 (200) 의 강성이 보다작아지게 되는시점에서 마이크로소자 (200)와전사필름 (210)의 접 착부위가떨어지게 된다.  That is, when the rigidity of the micro element 200 becomes smaller, the adhesion between the micro element 200 and the transfer film 210 is lowered.
이 경우, 가압부 (240)가마이크로소자 (200)의 중앙부분에 위치되고, 전사필 름 (210)이 가압부 (240)를중심으로 벤딩되는경우, 마이크로소자 (200)와전사필름 (210)의 접착부위는양측가장자리에서 내측방향으로줄어들수있다.  In this case, when the pressing portion 240 is positioned at the center portion of the micro element 200 and the transfer film 210 is bent around the pressing portion 240, the micro element 200 and the transfer film 210 ) Can be reduced inward from both side edges.
이에 따라, 마이크로소자 (200)와 전사필름 (210)의 접착면적은 제 1접착면적 (230)보다 작은 제 2접착면적 (235)으로 작아질 수 있다 (도 3의 ( 및 도 4의 ( 참조) .  Accordingly, the bonding area between the micro element 200 and the transfer film 210 can be reduced to a second bonding area 235 smaller than the first bonding area 230 (see FIG. 3 (and FIG. 4 ).
실험 결과, 마이크로소자 (200)와 전사필름 (210)의 접착부위가떨어진 후에 는 다시 전사필름 (210)이 원상태로 돌아오더라도, 마이크로 소자 (200)와 전사필름 (210)이 최초접착력보다더 작은접착력으로접착되는정도를보인다.  As a result of the experiment, even though the transfer film 210 returns to its original state after the bonding portion between the micro device 200 and the transfer film 210 is separated, the micro device 200 and the transfer film 210 are bonded It shows the degree of adhesion with small adhesive force.
즉, 일단 전사필름 (210)이 벤딩되어 마이크로 소자 (200)와 전사필름 (210)의 접착부위가떨어지면접착면적도줄어들게 되고, 접착강도도작아질수있다.  That is, once the transfer film 210 is bent so that the bonding area between the micro element 200 and the transfer film 210 is reduced, the bonding area can be reduced and the bonding strength can be reduced.
앞에서는 가압부 (240)가 전사필름 (210)의 폭방향, 즉, 도 3에 도시된 바와 같이 축방향으로 연장되도록마련되고 전사필름 (210)이 V축을기준으로 벤딩되는 것을설명하였으나, 전사필름 (210)은길이방향, 즉, X축방향으로기준으로벤딩될 2019/125013 1»(:1^1{2018/016357 3, the pressing portion 240 is provided so as to extend in the width direction of the transfer film 210, that is, as shown in FIG. 3, and the transfer film 210 is bent on the basis of the V axis. However, The film 210 is bent in the longitudinal direction, i.e., in the X-axis direction 2019/125013 1 »(: 1 ^ 1 {2018/016357
수도 있다. 그리고 이 경우에는가압부 (240)는전사필름 (210)의 길이방향, 즉, X축 방향으로연장되도록마련될수있다. It is possible. In this case, the pressing portion 240 may be provided to extend in the longitudinal direction of the transfer film 210, that is, the X axis direction.
나아가, 전사필름 (210)은 축 방향을기준으로 벤딩된 후, 추가적으로 X축 방향을기준으로다시 벤딩될수 있으며, 이 경우, 마이크로소자 (200)와전사필름 (210)의 접착면적은 제 2접착면적 (235)보다 더 작은 접착면적 (236)을 가질 수 있다 Further, the transfer film 210 may be bent on the basis of the axial direction, and then bent again on the basis of the X-axis direction. In this case, the area of adhesion between the micro- May have a smaller area 236 than area 235
(도 3의 ( !)및도 4의 ( 참조) . (Fig. 3 (!) And Fig. 4 (cf.)).
한편, 전사필름 (210)에 제 1접착면적 (230)으로 접착되는 마이크로 소자 (200) 는 전사필름 (210)에 픽업 太예)되기 전에는 소스기판 (미도시)에 마련된 상태일 수 있다. 여기서, 소스기판은
Figure imgf000010_0001
뿐만 아니라, 필름을포함하는 의미 로확대될수있다.
The micro device 200 bonded to the transfer film 210 with the first bonding area 230 may be provided on a source substrate (not shown) before the transfer film 210 is picked up). Here, the source substrate
Figure imgf000010_0001
In addition, it can be expanded to include film.
부착단계 (와20)는 마이크로 소자가 전사필름에서 분리되면서 타겟기판에 부 착되는단계일수있다. _  The attachment step (and 20) may be a step in which the micro device is detached from the transfer film and attached to the target substrate. _
부착단계 ( 20)에서, 마이크로 소자 (200)는 전사필름 (210)과의 접착면적이 작아진상태이기 때문에, 마이크로소자 (200)를타겟기판 (250)에 부착하는공정 시 에 마이크로 소자 (200)를 타겟기판 (250)으로 가압하는 압력이 종래에 마이크로 소 자를타겟기판으로가압하는압력보다작아질수있다.  Since the area of adhesion of the micro element 200 to the transfer film 210 is small in the attaching step 20, the micro element 200 ) To the target substrate 250 may be less than the pressure conventionally used to press the microspheres to the target substrate.
즉, 마이크로소자 (200)를타겟기판 (250)으로가압하는압력을더욱작게 하 더라도, 마이크로소자 (200)와전사필름 (210) 간의 접착면적이 이미 작아진상태이 므로마이크로소자 (200)가전사필름 (210)으로부터 용이하게 떨어질 수 있다. 이를 통해, 마이크로소자 (200)의 파손가능성을낮출수 있으며, 마이크로소자 (200)가 타겟기판 (250)으로부착되는수율이 높아질수있다. , That is, even if the pressure for pressing the micro element 200 to the target substrate 250 is reduced, since the area of adhesion between the micro element 200 and the transfer film 210 is already small, The film 210 can easily fall off. Accordingly, the possibility of breakage of the micro device 200 can be reduced, and the yield of attaching the micro device 200 to the target substrate 250 can be increased. ,
타겟기판 (250)은 마이크로 소자 (200)가 최종적으로 실장되는 기판일 수 있 다.  The target substrate 250 may be a substrate on which the micro device 200 is finally mounted.
도 1에 도시된 것처럼 타겟기판 (250)은일면에 전극 (251)을가질수있으며, 마이크로소자 (200)는타겟기판 (250)의 전극 (251)에 전기적으로 연결되도록부착될 수 있다. 일반적으로, 마이크로소자 (200) 및 타겟기판 (250)의 전극 (251)의 사이에 는솔더가마련될수있다.  As shown in FIG. 1, the target substrate 250 may have an electrode 251 on one side and the micro device 200 may be attached to the electrode 251 of the target substrate 250 so as to be electrically connected. In general, solder may be provided between the electrodes 251 of the micro device 200 and the target substrate 250.
그리고, 접착면적 축소단계 (와10)단계 및부착단계 (와20) 단계를통해 마이 2019/125013 1»(:1^1{2018/016357 Then, the adhesion area reduction step (step 10) and the adhesion step (step 20) 2019/125013 1 »(: 1 ^ 1 {2018/016357
크로 소자 (200) 및 타겟기판 (250)을포함하는마이크로소자기판이 제조될 수 있 다- 도 5는본발명의 제 1실시예에 따른마이크로소자전사장치를나타낸 예시 도이고, 도 6은 본 발명의 제 1실시예에 따른 마이크로 소자 전사장치의 가압부를 나타낸 예시도이다. 이하에서는설명의 편의상전사필름이 공급방향또는흐름방향 을 기준으로 흐름방향의 앞쪽을 전단/전단부로, 흐름방향의 뒤쪽을 후단/후단부로 정의하여 설명한다. 5 is a view illustrating an example of a micro-element transferring apparatus according to the first embodiment of the present invention. FIG. 6 is a cross-sectional view of the micro- FIG. 2 is a view showing an example of a pressing unit of a micro-device transferring apparatus according to a first embodiment of the present invention. Hereinafter, for the sake of convenience, the transfer film will be described with respect to the feed direction or the flow direction, with the front side in the flow direction defined as the front end / front end and the rear side in the flow direction defined as the rear end / rear end.
도 5 및 도 6에서 보는 바와 같이, 마이크로 소자 전사장치는 지지부 (301 , 302) 및 가압부 (340)를포함할수 있다. 지지부 (301 ,302)는 공급되는 전사필 름 (310)의 길이방향을따라서로이격되어 구비될수있다.  As shown in FIGS. 5 and 6, the micro-device transfer device may include supports 301 and 302 and a pusher 340. The supporting portions 301 and 302 may be spaced apart from each other along the longitudinal direction of the transferred transfer film 310.
그리고, 전사필름 (310)의 일면에는 마이크로 소자 (300)가 제 1접착면적으로 접착된 상태일 수 있다. 지지부 (301 ,302)는 전사필름 (310)의 타면을 밀착 지지할 수있다. 지지부 (301 , 302)는롤러일수있다.  The micro-elements 300 may be bonded to one side of the transfer film 310 with a first adhesive area. The supporting portions 301 and 302 can closely support the other surface of the transfer film 310. The supports 301 and 302 may be rollers.
전사필름 (310)은공급롤러 (305)로부터 회수롤러 (306)방향으로공급될수있 으며, 가압부 (340)에 도달하기 전의 어느지점에서 전사필름 (310)에는마이크로소 자 (300)가제 1접착면적으로접착될수있다.  The transfer film 310 may be supplied from the supply roller 305 toward the collection roller 306 and the transfer film 310 may be provided with a microcomponent 300 at a point before reaching the pressing portion 340. [ It can be adhered with an adhesive area.
가압부 (340)는지지부 (301 , 302)의 사이에 구비될수있다. 가압부 (340)는전 사필름 (310)의 폭방향으로 연장되도록 형성될 수 있으며, 전사필름 (310)의 타면에 밀착될수 있다. 또한, 전사필름 (310)이 가압부 (340)에 의해 가압되어 마이크로소 자 (300) 방향으로볼록해지게 벤딩되도록가압부 (340)의 상단부는 전사필름 (310)이 밀착되는지지부 (301 ,302)의 상단부보다높게위치될수있다.  The pressing portion 340 may be provided between the support portions 301 and 302. [ The pressing portion 340 may be formed to extend in the width direction of the transfer film 310 and may be in close contact with the other surface of the transfer film 310. The upper end of the pressing portion 340 is pressed against the supporting portions 301 and 301 to which the transfer film 310 is closely attached so that the transfer film 310 is pressed by the pressing portion 340 and bent in convex shape toward the micrometer 300. [ 302). ≪ / RTI >
또한, 가압부 (340)는수평방향으로왕복 이동될 수 있으며, 이를위해 마이 크로소자전사장치는가압부 (340)를수평방향으로 이동시키기 위한 이송부 (360)를 더 포함할수있다.  In addition, the pressing unit 340 may be reciprocated in the horizontal direction. To this end, the micro-device transfer apparatus may further include a transfer unit 360 for moving the pressing unit 340 in the horizontal direction.
이송부 (360)는 회전축 (361), 수평가이드 (362) 및 슬라이더 (363)를 가질 수 있다.  The transfer unit 360 may have a rotation shaft 361, a horizontal guide 362, and a slider 363.
회전축 (361)은가압부 (340)의 하부중앙에 수직방향으로결합될수 있으며; 가압부 (340)와 함께 수평방향으로 회전될 수 있다. 특히, 가압부 (340)는 X축또는 2019/125013 1»(:1^1{2018/016357 The rotary shaft 361 can be vertically coupled to the lower center of the pressing portion 340; And can be rotated in the horizontal direction together with the pressing portion 340. Particularly, the pressing portion 340 is formed on the X- 2019/125013 1 »(: 1 ^ 1 {2018/016357
축에 평행하도록 90도회전될수 있다., 도 6을참고할때 전사필름 (310)의 폭 방향으로 연장된 가압부 (340)가전사필름의 길이방향또는공급방향으로 연장된 형 상으로배치되도록회전축중심으토회전될수있다. It can be rotated 90 degrees to be parallel to the axis . That is , referring to FIG. 6, the pressing portion 340 extending in the width direction of the transfer film 310 may be rotated about the rotation axis so as to be arranged in a shape extending in the longitudinal direction or the feeding direction of the electrification film.
수평가이드 (362)는 X축 방향, 즉, 전사필름 (310)의 공급방향으로마련될 수 있다. 슬라이더 (363)는수평가이드 (362)를따라왕복 이동되도록마련될수 있으며, 슬라이더 (363)에는회전축 (361)이 결합될수 있다. 이에 따라, 슬라이더 (363)가수 평가이드 (362)를 따라 왕복 이동되면, 가압부 (340)도 전사필름 (310)의 공급방향으 로왕복이동될수있다.  The horizontal guide 362 may be provided in the X axis direction, that is, in the feeding direction of the transfer film 310. The slider 363 may be reciprocated along the horizontal guide 362 and the rotary shaft 361 may be coupled to the slider 363. Accordingly, when the slider 363 is reciprocated along the guide guide 362, the pressing portion 340 can also be reciprocated in the feeding direction of the transfer film 310.
가압부 (340)가 전사필름 (310)을 가압하여 전사필름 (310)이 상측으로 볼록하 게 벤딩된 상태에서 가압부 (340)가 전사필름 (310)의 길이방향으로 이동하게 되면 전사필름 (310)에 접착된 마이크로 소자 (300)들은 순차적으로 제 1접착면적에서 저 12 접착면적으로접착면적이 작아질수있다.  When the pressing portion 340 moves in the longitudinal direction of the transfer film 310 in a state where the pressurizing portion 340 presses the transfer film 310 to bend the transfer film 310 upwardly convexly, 310 may sequentially have a low bonding area at the first bonding area and a low 12 bonding area.
타겟기판 (350)이 마이크로소자 (300)를기준으로가압부 (340)의 반대측, 즉, 도 5를 참조하였을 때, 타겟기판 (350)이 마이크로 소자 (300)의 상측에 구비되고, 가압부 (340)에 의해 전사필름 (310)이 가압됨에 따라마이크로소자 (300)가상향이 동되어 타겟기판 (350)의 하면 높이와동일해지면, 마이크로 소자 (300)는 타겟기판 (350)에 접착될 수 있다. 즉, 마이크로 소자 (300)는 전사필름 (310)에서 분리됨과 동시에타겟기판 (350)에 부착될수있다.  5, the target substrate 350 is provided on the upper side of the micro-device 300, and the pressing portion 350 is provided on the upper side of the micro- The microdevice 300 may be bonded to the target substrate 350 if the virtual orientation of the microdevice 300 is changed to be equal to the bottom height of the target substrate 350 as the transfer film 310 is pressed by the substrate 340 have. That is, the micro device 300 can be separated from the transfer film 310 and attached to the target substrate 350.
본실시예에 따른마이크로소자전사장차를이용한마이크로소자전사공정 을도 5를참조하여 설명한다.  The micro-element transfer process using the micro-element transfer process according to this embodiment will be described with reference to FIG.
먼저, 타겟기판 (350)은고정된상태일수있다. 그리고, 가압부 (340)는타겟 기판 (350)의 하부좌측에 위치된상태일수있다.  First, the target substrate 350 may be in a fixed state. The pressing portion 340 may be positioned on the lower left side of the target substrate 350.
이후, 전사필름 (310)이 공급되어 마이크로소자 (300)가타겟기판 (350)의 하 측으로 타겟기판 (350)에 실장될 위치에 정위치되면 , 슬라이더 (363)는 수평가이드 (362)를따라우측방향으로 이동될수 있다. 그러면 가압부 (340)는전사필름 (310) 을 밀어 올려 벤딩시키면서 우측 방향으로 이동되고 마여크로 소자 (300)는타겟기 판 (350)에 순차적으로부착될수있다.  Thereafter, when the transfer film 310 is supplied and positioned at a position where the micro element 300 is to be mounted on the target substrate 350 under the target substrate 350, the slider 363 is moved along the horizontal guide 362 Can be moved in the right direction. Then, the pressing portion 340 is moved in the rightward direction while pushing up the transfer film 310 to bend it, and the black element 300 can be sequentially attached to the target substrate 350.
타겟기판 (350)의 하면에는 마이크로 소자 (300)의 전극 (미도시)에 대응되는 2019/125013 1»(:1^1{2018/016357 The lower surface of the target substrate 350 is provided with an electrode (not shown) corresponding to an electrode 2019/125013 1 »(: 1 ^ 1 {2018/016357
전극 (미도시)과, 두전극을전기적으로연결하기 위한솔더가마련된상태일 수 있 다. 또한, 타겟기판 (350)이 안정적으로고정되도록타겟기판 (350)을고정하기 위한 마운트 (370)가더 마련될수있다. An electrode (not shown), and a solder for electrically connecting the two electrodes. In addition, a mount 370 for fixing the target substrate 350 may be provided so that the target substrate 350 is stably fixed.
한편, 본실시예에 따른마이크로소자전자장치에서는전술한전사공정과 함께 , 추가공정을더 포함할수있다.  On the other hand, the micro device electronic device according to the present embodiment can further include an additional process together with the above-described transfer process.
즉, 지지부 (301 ,302) 간의 거리가더 길게 마련된 상태에서, 타겟기판 (350) 의 전단에서 전사필름 (310)이 1차벤딩되도록 할수 있다. 이때, 가압부 (340)는 X 축 방향, 즉, 전사필름 (310)의 길이방향으로 연장된 상태일 수 있다. 그리고, 이 상태에서 가압부 (340)는 축 방향, 즉, 전사필름 (310)의 폭방향으로 왕복 이동될 수있다.  That is, the transfer film 310 may be first bent at the front end of the target substrate 350 in a state where the distance between the supporting portions 301 and 302 is longer. At this time, the pressing portion 340 may extend in the X axis direction, that is, the longitudinal direction of the transfer film 310. In this state, the pressing portion 340 can be reciprocated in the axial direction, that is, in the width direction of the transfer film 310.
이를위해 , 마이크로소자전사장치는슬라이더 (363)가 축방향으로이동되 도록 안내하기 위해 축 방향으로 연장되도록 마련되는 추가수평가이드 (미도시)를더포함하거나, X축방향으로마련되는수평가이드 (362)를 축방향으로이동시키기 위한구성을더 포함할수있다.  To this end, the micro-device transfer device includes an additional horizontal guide (not shown) provided to extend in the axial direction to guide the slider 363 to be moved in the axial direction, or a horizontal guide 362 ) In the axial direction.
그리고, 이렇게 전사필름 (310)의 1차벤딩을통해 접촉면적이 작아진마이크 로소자가타겟기판 (350)의 하부에 도착하였을때, 가압부 (340)에 의한 2차벤딩이 이루어질 수 있다. 이때, 가압부 (340)는 '{축 방향, 즉, 전사필름 (310)의 폭방향으 로연장된상태일 수 있으며, 전사필름 (310)의 길이방향으로왕복 이동될수 있다. 이에 따라, 마이크로소자 (300)의 접촉면적은더 작아질수 있으며, 마이크로소자 (300)와타겟기판 (350)의 접착이 더 안정적으로이루어질수있다.  When the microroson having a reduced contact area through the primary bending of the transfer film 310 arrives at the lower portion of the target substrate 350, secondary bending by the pressing portion 340 can be performed. At this time, the pressing portion 340 may be extended in the axial direction, that is, the width direction of the transfer film 310, and may be reciprocated in the length direction of the transfer film 310. Accordingly, the contact surface area of the micro device 300 can be made smaller, and the adhesion between the micro device 300 and the target substrate 350 can be made more stable.
도 7은본발명의 제 2실시예에 따른마이크로소자전사장치를나타낸 예시 도이다. 도 7에서 보는바와같이, 본실시예에 따른마이크로소자전사장치는제 1지지부 (401), 제 2지지부 (402), 전이부 (441), 제 3지지부 (403), 제 4지지부 (404), 전 사부 (442)그리고가압부 (443)를포함할수있다.  7 is an exemplary view showing a micro-element transferring apparatus according to a second embodiment of the present invention. 7, the micro-element transfer device according to the present embodiment includes a first support portion 401, a second support portion 402, a transition portion 441, a third support portion 403, a fourth support portion 404, A transfer part 442, and a pressing part 443.
제 1지지부 (401)는 공급되는 전사필름 (410)의 공급방향을 기준으로 마이크로 소자 (400)가마련되는소자제공부재의 전단에 구비될수 있다. 본발명의 일실시예 에서 소자제공부재는 전사필름 (410)에 마이크로소자를제공하기 위한수단에 해당 하며, 예컨대 소스기판 (415) 또는 캐리어필름 (570, 670)이 소자제공부재에 해당할 2019/125013 1»(:1^1{2018/016357 The first supporting part 401 may be provided at the front end of the element providing member on which the micro element 400 is mounted based on the feeding direction of the transferred transfer film 410. In one embodiment of the present invention, the element-providing member corresponds to a means for providing a micro element to the transfer film 410, for example, the source substrate 415 or the carrier film 570 or 670 corresponds to the element-providing member 2019/125013 1 »(: 1 ^ 1 {2018/016357
수 있고, 본 실시예에서는 도 7에 도시된 바와 같이 소자제공부재로서 소스기판 (415)이 제공될수있다. . In this embodiment, a source substrate 415 may be provided as an element-providing member as shown in Fig. .
전사필름 (410)은공급롤러 (405)로부터 회수롤러 (406)방향으로공급될수있 다.  The transfer film 410 may be fed from the feed roller 405 to the withdrawal roller 406.
제 2지지부 (402)는 소스기판 (415)의 후단에 구비될 수 있다. 제 2지지부 (402) 는 전사필름 (410)이 소스기판 (415)의 상측을지나도록 제 1지지부 (401)와함께 전사 필름 (410)의 일면을지지할수있다.  The second support portion 402 may be provided at the rear end of the source substrate 415. The second support portion 402 can support one side of the transfer film 410 together with the first support portion 401 so that the transfer film 410 passes over the upper side of the source substrate 415.
전이부 (441)는제 1지지부 (401) 및 제 2지지부 (402)의 사이에 구비될수있다. 전이부 (441)는 전사필름 (410)의 상측에 마련될 수 있다. 전이부 (441)는 전사필름 (410)을소스기판 (415) 방향으로가압할수 있으며, 이에 따라소스기판 (415)의 마 이크로소자 (400)는전사필름 (410)의 일면에 제 1접착면적으로접착될수있다.  The transition portion 441 may be provided between the first support portion 401 and the second support portion 402. The transition portion 441 may be provided on the upper side of the transfer film 410. The transition element 441 can press the transfer film 410 in the direction of the source substrate 415 so that the micro element 400 of the source substrate 415 has a first adhesion area .
제 3지지부 (403)는소스기판 (415)의 후단에 마련되는타겟기판 (450)의 전단에 구비될수있다.  The third support portion 403 may be provided at a front end of the target substrate 450 provided at the rear end of the source substrate 415.
그리고 제 4지지부 (404)는타겟기판 (450)의 후단에 구비될 수 있다. 제 4지지 부 (404)는 전사필름 (410)이 타겟기판 (450)의 상측을지나도록 제 3지지부 (403)와함 께 전사필름 (410)의 일면을지지할수있다.  The fourth support part 404 may be provided at the rear end of the target substrate 450. The fourth support part 404 can support one side of the transfer film 410 with the third support part 403 so that the transfer film 410 passes over the upper side of the target substrate 450.
전사부 (442)는제 3지지부 (403) 및 제 4지지부 (404)의 사이에 구비될수,있다. 전사부 (442)는 전사필름 (410)의 상측에 마련될 수 있다. 전사부 (442)는 전사필름 (410)을타겟기판 (450) 방향으로가압할수 있으며, 이에 따라전사필름 (410)에 접 착된 마이크로 소자 (400)는 전사필름 (410)에서 분리됨과 동시에 타겟기판 (450)에 부착될수있다.  The transfer portion 442 can be provided between the third support portion 403 and the fourth support portion 404. The transfer portion 442 may be provided on the upper side of the transfer film 410. The transfer section 442 can press the transfer film 410 in the direction of the target substrate 450 so that the micro devices 400 bonded to the transfer film 410 are separated from the transfer film 410, (Not shown).
가압부 (443)는제 2지지부 (402) 및 제 3지지부 (403)의 사이에 구비될수있다. 가압부 (443)는 전사필름 (410)의 상측에 구비될 수 있다. 가압부 (443)는 전사필름 (410)을 가압하여 전사필름 (410)이 마이크로 소자 (400)가 부착된 방향으로 볼록해 지게 벤딩되도록할수 있다. 이에 따라, 마이크로소자 (400)의 일부 접촉면이 전 사필름 (410)으로부터 떨어져서 마이크로소자 (400)와전사필름 (410) 간의 접착면적 이 제 1접착면적보다작은제 2접착면적으로작아질수있다.  The pressing portion 443 may be provided between the second support portion 402 and the third support portion 403. [ The pressing portion 443 may be provided on the upper side of the transfer film 410. The pressing portion 443 presses the transfer film 410 so that the transfer film 410 is bent so as to be convex in the direction in which the micro device 400 is attached. The contact area between the micro device 400 and the transfer film 410 may be reduced to a second adhesion area smaller than the first adhesion area.
한편, 제 2지지부 (402) 및 제 3지지부 (403)는하강이동및상승이동할수있 2019/125013 1»(:1^1{2018/016357 On the other hand, the second support portion 402 and the third support portion 403 can be moved downward and upward 2019/125013 1 »(: 1 ^ 1 {2018/016357
다. 제 2지지부 (402) 및 제 3지지부 (403)는 마이크로 소자 (400)가진입 시에는마이 크로소자 (400)가걸리지 않도록하강이동할수있다 (도 7의 ( 참조) . All. The second support portion 402 and the third support portion 403 can move down so that the micro device 400 is not caught when the micro device 400 is inserted therein (see FIG. 7).
그리고, 마이크로소자 (400)가통과하면 전사필름 (410)의 일면에 밀착되도록 상승 이동할수 있다. 또한, 제 2지지부 (402) 및 제 3지지부 (403)의 상승 이동이 완 료시에, 제 2지지부 (402) 및 제 3지지부 (403)의 최상부는가압부 (443)의 하단부보다 높은위치가될수있다.  Then, the micro-device 400 can move up and down so as to be in close contact with one surface of the transfer film 410. The uppermost portion of the second support portion 402 and the third support portion 403 are positioned higher than the lower end portion of the pressing portion 443 when the second support portion 402 and the third support portion 403 move up .
또한, 가압부 (443)는하강이동또는상승이동할수있다. 그리고, 제 2지지 부 (402) 및 제 3지지부 (403)의 상승이동이 완료시에, 가압부 (443)는하단부가제 2 지지부 (402) 및 제 3지지부 (403)의 최상부보다 낮은 위치가 되도록 하측 방향으로 이동될 수 있다. 이를 통해, 가압부 (443)에 의해 전사필름 (410)이 마이크로 소자 (400) 방향으로볼록해지도록 벤딩될 수 있으며 (도 7의 ) 참조), 마이크로 소자 (400)와전사필름 (410)간의 접착면적이 작아질수있다.  Further, the pressing portion 443 can move downward or upward. When the second supporting portion 402 and the third supporting portion 403 are lifted up, the lower end of the pressing portion 443 is positioned lower than the uppermost portion of the second supporting portion 402 and the third supporting portion 403 And can be moved in the downward direction as much as possible. The transfer film 410 can be bent so as to be convex in the direction of the microdevice 400 by the pressing portion 443 and the microdevice 400 can be bent between the microdevice 400 and the transfer film 410 The bonding area can be reduced.
도 8은본발명의 제 3실시예에 따른마이크로소자전사장치를나타낸 예시 도이다. 본 실시예에서는 전사필름의 벤딩을통해 마이크로소자와 전사필름 간의 접착면적이 작아지도록하는공정과, 접착면적이 작아진마이크로소자를타겟기판 에 부착하는공정이 개별적으로이루어질수있다.  8 is an exemplary view showing a micro-element transferring apparatus according to a third embodiment of the present invention. In this embodiment, the step of reducing the area of adhesion between the micro element and the transfer film through the bending of the transfer film and the step of attaching the micro element with the smaller area of adhesion to the target substrate can be performed individually.
도 8에서 보는바와같이, 본실시예에 따른마이크로소자전사장치는전이 부 (541), 전사부 (542)그리고가압부 (543)를포함할수있다.  As shown in FIG. 8, the micro-device transfer apparatus according to the present embodiment may include a transition portion 541, a transfer portion 542, and a pressurizing portion 543.
전이부 (541)는공급되는전사필름 (510)의 일면을밀착지지하도록마련될수 있다. 전사필름 (510)은공급롤러 (505)로부터 회수롤러 (506) 방향으로공급될 수 있 다.  The transition portion 541 may be provided to closely support one side of the supplied transfer film 510. The transfer film 510 may be fed from the feed roller 505 toward the collection roller 506. [
전이부 (541)는공급되는소자제공부재의 하측에 구비될 수 있다. 본발명의 일실시예에서 소자제공부재는 전사필름 (410)에 마이크로 소자를 제공하기 위한 수 단에 해당하며, 예컨대소스기판 (415)또는캐리어필름 (570 , 670)이 소자제공부재에 해당할수 있고, 본실시예에서는도 8에 도시된바와같이 소자제공부재로서 캐리 어필름 (570)이 제공될수있다.  The transition portion 541 may be provided below the element-providing member to be supplied. In one embodiment of the present invention, the element providing member corresponds to a means for providing a micro element to the transfer film 410, for example, the source substrate 415 or the carrier film 570 or 670 may correspond to the element providing member In this embodiment, as shown in Fig. 8, a carrier film 570 may be provided as an element providing member.
즉, 본실시예에서 전이부 (541)은공급되는 캐리어필름 (570)의 하측에 구비 될 수 있으며, 전이부 (541)에 밀착된 전사필름 (510)에 캐리어필름 (570)의 하면에 2019/125013 1»(:1^1{2018/016357 That is, in this embodiment, the transition portion 541 may be provided below the supplied carrier film 570 and may be provided on the lower surface of the carrier film 570 to the transfer film 510 adhered to the transition portion 541 2019/125013 1 »(: 1 ^ 1 {2018/016357
부착된 마이크로 소자 (500)가 접착되도록 전사필름 (510)을 마이크로 소자 (500) 방 향으로가압할수있다. The transfer film 510 can be pressed toward the micro device 500 so that the attached micro device 500 is adhered.
이에 따라, 캐리어필름 (570)의 하면에 부착된 마이크로소자 (500)는 캐리어 필름 (570)에서 분리되어 전사필름 (510)의 타면에 부착될 수 있다. 이때, 마이크로 소자 (500)는전사필름 (510)에 제 1접착면적으로부착될수있다.  The micro element 500 attached to the lower surface of the carrier film 570 can be separated from the carrier film 570 and attached to the other surface of the transfer film 510. [ At this time, the micro device 500 may be attached to the transfer film 510 with a first adhesive area.
전사부 (542)는전사필름 (510)의 공급방향을따라전이부 (541)와이격되어 구 비될수 있다. 전사부 (542)의 하측에는타겟기판 (550)이 마련될수 있으며, 전사부 (542)는 전사필름 (510)의 일면에 밀착되어 전사필름 (510)을 타겟기판 (550) 방향으 로가압할수있다.  The transfer portion 542 may be spaced apart from the transition portion 541 along the feeding direction of the transfer film 510. [ A target substrate 550 may be provided below the transfer section 542 and the transfer section 542 may be in close contact with one surface of the transfer film 510 to press the transfer film 510 toward the target substrate 550 have.
가압부 (543)는 전이부 (541) 및 전사부 (542)의 사이에 구비될 수 있다. 가압 부 (543)는 전사필름 (510)의 일면을 가압하여 전사필름 (510)이 마이크로 소자 (500) 가 부착된 방향으로 볼록해지게 벤딩되도록 할 수 있다. 가압부. (543)를 거치면서 마이크로소자 (500)의 접.착면 일부는 전사필름 (510)으로부터 떨어져서 마이크로소 자 (500)와 전사필름 (510) 간의 접착부위가 제 1접착면적보다 작은 제 2접착면적으로 작아질수있다.  The pressing portion 543 may be provided between the transition portion 541 and the transfer portion 542. The pressing portion 543 may press one surface of the transfer film 510 to bend the transfer film 510 so as to be convex in the direction in which the micro device 500 is attached. Pressure section. A part of the contact surface of the micro device 500 is separated from the transfer film 510 so that the adhesion area between the micro device 500 and the transfer film 510 is smaller than the first adhesion area, .
전사부 (542)는전사필름 (510)을타겟기판 (550) 방향으로가압하여 제 2접착면 적으로접착면적이 작아진 상태로공급되는마이크로소자 (500)가전사필름 (510)에 서 분리됨과동시에 타겟기판 (550)에 부착되도록할수있다.  The transferring portion 542 is separated from the microelectronic device 500 supplied from the transferring film 510 in a state in which the transferring film 510 is pressed toward the target substrate 550 and the bonding area of the second bonding surface is reduced It can be attached to the target substrate 550 at the time of overactuation.
이때, 타겟기판 (550)은가압부 (543) 및 전사부 (542)에 밀착되어 공급되는전 사필름 (510)의 공급방향으로 이송될 수 있으며, 타겟기판 (550)의 이송속도는 전사 필름의 이송속도및 마이크로소자 (500)가타겟기관 (550)에 접착되는위치 등을고 려하여 설정될수있다.  At this time, the target substrate 550 can be conveyed in the feeding direction of the transfer film 510 supplied in close contact with the pressing portion 543 and the transfer portion 542, and the transfer speed of the target substrate 550 is The feed rate, and the position where the micro-device 500 is attached to the target organs 550, and the like.
도 9는본발명의 제 4실시예에 따른마이크로소자전사장치를나타낸 예시 도이다. 본실시예에서는 전사필름의 벤딩을 통해 마이크로소자와 전사필름 간의 접착면적이 작아지도록하는공정과, 접착면적이 작아진 마이크로소자를타겟기판 에 부착하는공정이 동시에 이루어질 수 있으며, 다른구성은전술한 제 3실시예와 동일하다.  9 is a view showing an example of a micro-element transferring apparatus according to a fourth embodiment of the present invention. In this embodiment, the step of reducing the area of adhesion between the micro element and the transfer film through the bending of the transfer film and the step of adhering the micro element with the smaller area of adhesion to the target substrate can be performed at the same time. 3 embodiment.
먼저 , 도 9의 (å0에서 보는바와같이 , 본실시예에 따른마이크로소자전 2019/125013 1»(:1^1{2018/016357 First, as shown in 0 of Figure 9, the micro device of the present embodiment before 2019/125013 1 »(: 1 ^ 1 {2018/016357
사장치는전이부 (641), 지지부 (601)그리고가압부 (642)를포함할수있다. The capping device may include a transition portion 641, a support portion 601, and a pressing portion 642.
전이부 (641)는 공급롤러 (605)로부터 회수롤러 (606) 방향으로 공급되는 전사 필름 (610)의 일면을밀착지지하도록마련될수있다.  The transition portion 641 may be provided to closely support one surface of the transfer film 610 supplied from the supply roller 605 toward the recovery roller 606. [
전이부 (641)는공급되는 캐리어필름 (670)의 하측에 구비될 수 있으며, 전이 부 (641)에 밀착된 전사필름 (610)에 캐리어필름 (670)의 하면에 부착된 마이크로 소 자 (600)가접착되도록 전사필름 (610)을마이크로소자 (600) 방향으로가압할수 있 다.  The transition portion 641 may be provided below the supplied carrier film 670 and may include a micro element 600 attached to the lower surface of the carrier film 670 to a transfer film 610 which is in close contact with the transition portion 641 The transfer film 610 can be pressed in the direction of the microdevice 600. As shown in FIG.
이를통해, 캐리어필름 (670)의 하면에 부착된 마이크로소자 (600)는 캐리어 필름 (670)에서 분리되어 전사필름 (610)의 타면에 부착될 수 있다. 이때, 마이크로 소자 (600)는전사필름 (610)에 제 1접착면적으로부착될수있다.  The micro device 600 attached to the lower surface of the carrier film 670 can be separated from the carrier film 670 and attached to the other surface of the transfer film 610. [ At this time, the micro device 600 may be attached to the transfer film 610 with a first adhesive area.
지지부 (601)는전사필름 (610)의 공급방향을따라전이부 (641)와이격되아구 비되고, 전사필름 (610)의 타면에 밀착되어 전이부 (641)와함께 상기 전사필름 (610) 이 팽팽하게 당겨진상태로공급되도록지지할수있다.  The supporting portion 601 is moved along the feeding direction of the transfer film 610 with the transition portion 641 and is brought into close contact with the other surface of the transfer film 610 to transfer the transfer film 610 together with the transition portion 641 It can be supported to be fed in a tightly pulled state.
가압부 (642)는 전이부 (641) 및 지지부 (601)의 사이에 구비되고, 전사필름 (610)의 타면을 가압하여 마이크로 소자 (600)가부착된 방향으로 볼록해지게 전사 필름 (610)이 벤딩되도록할수있다.  The pressing portion 642 is provided between the transition portion 641 and the supporting portion 601 and presses the other surface of the transfer film 610 so that the transfer film 610 is convexed in the direction in which the micro device 600 is attached. Can be bent.
또한, 가압부 (642)의 하측에는타겟기판 (650) )이 마련될수 있으며, 가압부 (642)는 전사필름 (610)의 일면에 밀착되어 전사필름 (610)을 타겟기판 (650) 방향으 로가압할수있다.  The pressing portion 642 is brought into close contact with the one surface of the transfer film 610 so as to face the transfer film 610 in the direction of the target substrate 650 Lt; / RTI >
즉, 가압부 (642)는마이크로 소자 (600)의 일부 접촉면이 전사필름 (610)으로 부터 떨어져서 마이크로 소자 (600)와 전사필름 (610) 간의 접착부위가 제 1접착면적 보다작은제 2접착면적으로작아지도록할수있다.  That is, the pressing portion 642 is formed so that a part of the contact surface of the micro device 600 is separated from the transfer film 610, and a bonding area between the micro device 600 and the transfer film 610 is smaller than a first bonding area .
또한, 가압부 (642)는마이크로소자 (600)를타겟기판 (650) ) 방향으로가압하 여 마이크로소자 (600)가전사필름 (610)에서 분리됨과동시에 타겟기판 (650) )에 부 착되도록할수있다.  The pushing portion 642 pushes the microdevice 600 toward the target substrate 650 so that the microdevice 600 is detached from the electrification film 610 and attached to the target substrate 650) can do.
한편, 도 9의 ( 에서 보는바와같이, 가압부 (642 는전술한가압부 (642) 보다더 작은곡률 반경으로 형성될 수도 있다. 이 경우, 가압부 (642 및 지지부 (601)의 사이에는추가지지부 (602)가더 마련될 수 있다. 추가지지부 (602)는가 2019/125013 1»(:1^1{2018/016357 9, the pressing portion 642 may be formed with a radius of curvature smaller than that of the pressing portion 642. In this case, an additional pressing portion 642 is provided between the pressing portion 642 and the supporting portion 601. In this case, A support 602 may be provided. Additional support 602 may be provided 2019/125013 1 »(: 1 ^ 1 {2018/016357
압부 (642 보다 상측에 위치되어 가압부 (642 를 지나는 전사필름 (610)이 더욱 작 은곡률반경으로벤딩되도록도울수있다. Can be positioned above the pressing portion 642 and help the transfer film 610 passing through the pressing portion 642 to bend at a smaller radius of curvature.
가압부 (642, 642 는회전하는롤러 형태이거나, 회전하지 않는 형태가적절 하게선택되어 구현될수있다.  The pressing portions 642 and 642 may be realized by appropriately selecting a shape that is a rotating roller shape or a non-rotating shape.
한편, 마이크로소자와전사필름간의 접착면적이 제 1접착면적보다작은제 2 접착면적으로 작아지도록하는방법은도 1내지 도 4를참고하여 설명한바와같 이 전사필름이 마이크로 소자가부착된 방향으로 볼록해지도록 벤딩되는 방법으로 한정되는 것은아니며, 전사필름이 마이크로소자가부착된 방향으로오목해지도록 벤딩될수도있다.  On the other hand, a method of making the area of adhesion between the micro element and the transfer film small at a second adhesion area smaller than the first area of adhesion, as described with reference to FIGS. 1 to 4, And the transfer film may be bent so as to be concave in the direction in which the micro device is attached.
도 10은본 발명의 제 2실시예에 따른마이크로 소자 전자방법에 적용될 수 있는공정을나타낸예시도이다.  10 is an exemplary view showing a process that can be applied to the microelectronic electronic method according to the second embodiment of the present invention.
도 10에서 보는바와같이, 접착면적 축소단계에서 전사필름 (1210)은마이크 로 소자 (200)이 부착된 방향으로 오목해지도록 벤딩될 수 있다. 이러한 전사필름 (1210)의 벤딩은 전사필름 (1210)에서 마이크로소자 (200)이 부착된 면을가압부 (마 도시)로 가압함으로써 이루어질 수 있다. 즉, 가압부에 의해 전사필름 (1210)이 마 이크로소자 (200)이 부착된 방향으로오목해지도록 벤딩되면 마이크로소자 (200)의 일부 접촉면은 전사필름 (1210)부터 떨어질 수 있다. 그리고 이를 통해, 마이크로 소자 (200)과전사필름 (1210) 간의 접착면적은제 1접착면적 ( 1230)보다작은제 2접착 면적 (1235)으로 작아질 수 있다. 예를 들어, 전사필름 ( 1210)에서 벤딩되는부분이 마이크로 소자 (200)의 중앙부분이 되는 경우, 전사필름 (1210)과 마이크로 소자 (200)은 마이크로 소자 (200)의 내측부분에서부터 먼저 떨어지고 이후 가장자리 방 향으로떨어질수있다.  10, in the bonding area reducing step, the transfer film 1210 can be bent so as to be recessed in the direction in which the device 200 is attached. The bending of the transfer film 1210 may be performed by pressing the surface to which the micro element 200 is attached on the transfer film 1210 to a pressing portion (not shown). That is, when the transfer film 1210 is bent by the pressing portion to be recessed in the direction in which the micro device 200 is attached, some contact surfaces of the micro device 200 may be separated from the transfer film 1210. The adhesive area between the micro element 200 and the transfer film 1210 can be reduced to a second adhesive area 1235 smaller than the first adhesive area 1230. [ For example, when the portion bent in the transfer film 1210 becomes the central portion of the micro element 200, the transfer film 1210 and the micro element 200 first fall off from the inside portion of the micro element 200, It can fall in the edge direction.
가압부는 어레이 형태로 전사필름 (1210)에 마련되는 마이크로 소자 (200)의 사이에 위치되어 전사필름 (1210)을 가압하거나, 또는, 마이크로 소자 (200)이 마련 되지 않는 전사필름 (1210)의 외곽 모서리 부분에 위치되어 전사필름 ( 1210)을 가압 할수있다.  The pressing portion is located between the micro elements 200 provided in the transfer film 1210 in the form of an array and presses the transfer film 1210 or the outside of the transfer film 1210 where the micro element 200 is not provided So that the transfer film 1210 can be pressed.
이러한방법에 의해 마이크로소자기판은제조될수있으며, 마이크로소자 전사장치는이러한방법이 적용되도록구현될수있다. 2019/125013 1»(:1^1{2018/016357 By this method, the micro element substrate can be manufactured, and the micro element transfer apparatus can be implemented so that this method is applied. 2019/125013 1 »(: 1 ^ 1 {2018/016357
-부호의 설명 -- Explanation of symbols -
200, 300, 400, 500, 600: 마이크로소자 200, 300, 400, 500, 600:
210, 310, 410 ,510 ,610,1210: 전사필름  210, 310, 410, 510, 610, 1210: transfer film
230: 제 1접착면적  230: first bonding area
235: 제 2접착면적  235: second bonding area
250, 350 ,450 ,550, 650: 타겟기판  250, 350, 450, 550, 650: target substrate
360: 이송부  360:
402: 제 2지지부  402: second support portion
403: 제 3지지부  403: third support portion
415: 소스기판  415: source substrate
240,340, 443,543, 642, 6423: 가압부 240, 340, 443, 543, 642, 642 3 :
442, 542: 전사부  442, 542:
441,541,641: 전이부  441, 541, 641:
570,670: 캐리어필름  570,670: Carrier film

Claims

2019/125013 1»(:1^1{2018/016357 2019/125013 1 »(: 1 ^ 1 {2018/016357
【청구의 범위】 Claims:
【청구항 11  Claim 11
마이크로 소자의 접착부위가 제 1접착면적으로 접착된 전사필름을 벤딩하여 상기 마이크로소자의 일부분이 상기 전사필름에서 떨어지고상기 접착부위가상기 제 1접착면적보다작은제 2접착면적으로축소되는접착면적 축소단계; 및  Wherein the micro-element is bent at a first adhesion area of the micro-element to bend the micro-element so that a part of the micro-element is detached from the transfer film and the adhesion area is reduced to a second bonding area smaller than the first bonding area step; And
상기 제 2접착면적을가지는상기 마이크로소자가상기 전사필름에서 분리되 면서 타겟기판에 부착되는부착단계;를포함하는마이크로소자전사방법 .  And attaching the microdevice having the second bonding area to the target substrate while being separated from the transfer film.
【청구항 2]  [Claim 2]
제 1항에 있어서,  The method according to claim 1,
상기 접착면적 축소단계에서, 상기 전사필름은상기 마이크로소자가부착된 일면이 볼록해지도록 벤딩되어 상기 마이크로 소자의 상기 접착부위가가장자리부 터 내측방향으로축소되는마이크로소자전사방법 .  Wherein the transfer film is bent in a convex manner on one side of the transfer film to which the micro device is attached, so that the adhesion area of the micro device is reduced inward from the edge.
【청구항 3】  [Claim 3]
제 1항에 있어서,  The method according to claim 1,
상기 접착면적 축소단계에서, 상기 전사필름은상기 마이크로소자가부착된 일면이 오목해지도록벤딩되어 상기 마이크로소자의 상기 접착부위가내측부터 가 장자리 방향으로축소되는마이크로소자전사방법 .  In the step of reducing the area of adhesion, the transfer film is bent so that one surface of the transfer film adhered with the micro element is recessed, so that the adhesion portion of the micro element is contracted from the inside to the most major direction.
【청구항 4]  [4]
제 1항에 있어서,  The method according to claim 1,
상기 접착면적 축소단계에서, 상기 전사필름은상기 전사필름의 길이방향및 폭방향중적어도어느하나의 방향으로벤딩되는마이크로소자전사방법 .  Wherein the transfer film is bent in at least one of a longitudinal direction and a width direction of the transfer film.
【청구항 5】  [Claim 5]
일면에 마이크로소자가제 1접착면적으로 접착되는상기 전사필름을지지하 는지지부; 및  A supporting section for supporting the transfer film on one surface of which the microdevice is adhered with a first adhesive area; And
상기 전사필름의 폭방향으로연장형성되며, 상기 전사필름의 타면을가압하 여 상기 전사필름의 상기 일면이 볼록해지도록 벤딩함으로써, 상기 마이크로 소자 의 일부분을상기 전사필름으로부터 떨어뜨리고상기 마이크로소자와상기 전사필 름간의 접착부위를 상기 제 1접착면적보다 작은 제 2접착면적으로 축소하는 가압부; 2019/125013 1»(:1^1{2018/016357 And bending the other surface of the transfer film so that the one surface of the transfer film is convex so that a part of the micro device is separated from the transfer film and the micro element and the transfer member A pressing portion that reduces an adhesion area between the films to a second adhesion area smaller than the first adhesion area; 2019/125013 1 »(: 1 ^ 1 {2018/016357
를포함하며, / RTI >
상기 가압부는상기 전사필름에 상기 제 2접착면적으로접착된상기 마이크로 소자가상기 전사필름에서 분리되면서 타겟기판에 부착되도록상기 전사필름을 상 기 타겟기판방향으로가압하는마이크로소자전사장치 .  Wherein the pressing portion presses the transfer film toward the target substrate so that the micro element bonded to the transfer film with the second adhesion area is separated from the transfer film and attached to the target substrate.
【청구항 6】  [Claim 6]
제 5항에 있어서,  6. The method of claim 5,
상기 지지부는한쌍으로구비되고상기 전사필름의 상기 타면을지지하며 , 상기 가압부는상기 한쌍의 지지부사이에 위치되며, 상기 한쌍의 지지부 보다 상기 타겟기판 방향으로 돌출 배치되어 상기 전사필름을 벤딩하는 마이크로 소자전사장치 .  Wherein the supporting portion is provided in a pair and supports the other surface of the transfer film, the pressing portion is positioned between the pair of supporting portions, Transfer device.
【청구항 7]  [7]
제 5항에 있어서,  6. The method of claim 5,
상기 가압부는 연장방향이 상기 전사필름의 폭방향에서 상기 전사필름의 길 이방향이 되도록 회전 가능하고, 상기 전사필름의 폭방향 또는 길이방향 중 상기 연장방향에 수직한방향으로이동가능한마이크로소자전사장치.  Wherein the pressing portion is rotatable so that an extending direction thereof is a direction opposite to a length direction of the transfer film in a width direction of the transfer film and is movable in a direction perpendicular to the extending direction of the width direction or the length direction of the transfer film.
【청구항 8]  [8]
제 5항에 있어서,  6. The method of claim 5,
상기 전사필름의 흐름방향에 따라상기 가압부의 전단에 배치되고, 소자제공 부재에 구비된상기 마이크로·소자가상기 소자제공부재로부터 분리되면서 상기 전 사필름의 상기 일면에 상기 제 1접착면적으로 접착되도록 상기 전사필름의 타면을 상기 소자제공부재 방향으로 가압하는 전이부;를 더 포함하는마이크로소자 전사 장치 .  The micro-elements provided on the element-providing member are separated from the element-providing member so that the micro-elements provided on the element-providing member are bonded to the one surface of the transfer film with the first adhesive surface in accordance with the flow direction of the transfer film And a transition part for pressing the other surface of the transfer film toward the element-providing member.
【청구항 9】  [Claim 9]
제 8항에 있어서,  9. The method of claim 8,
상기 지지부는 상기 흐름방향에 따라상기 가압부의 후단에 배치되고 상기 전사필름의 상기 타면을지지하며,  Wherein the support portion is disposed at a rear end of the pressing portion along the flow direction and supports the other surface of the transfer film,
상기 가압부는상기 전이부및 상기 지지부보다상기 타겟기판방향으로돌 출배치되어 상기 전사필름을벤딩하는마이크로소자전사장치 . 2019/125013 1»(:1^1{2018/016357 Wherein the pressing portion is protruded toward the target substrate from the transition portion and the support portion to bend the transfer film. 2019/125013 1 »(: 1 ^ 1 {2018/016357
【청구항 10】 Claim 10
제 8항에 있어서,  9. The method of claim 8,
상기 흐름방향에 따라상기 가압부의 후단및 상기 지지부의 전단에 배치되 고, 상기 전사필름의 상기 일면을지지하며, 상기 타겟기판으로부터 상기 가압부보 다더 멀리 배치되어 상기 전사필름을 벤딩하는추가지지부;를 더 포함하는마이 크로소자전사장치 .  An additional support portion disposed at a rear end of the pressing portion and at a front end of the supporting portion in accordance with the flow direction and supporting the one surface of the transfer film and being further away from the target substrate than the pressing portion to bend the transfer film; Further comprising a microdevice transfer device.
【청구항 11】  Claim 11
제 8항에 있어서,  9. The method of claim 8,
상기 소자제공부재는상기 마이크로소자가구비되는소스기판또는캐리어 필름인마이크로소자전사장치 .  Wherein the element providing member is a source substrate or a carrier film having the micro element.
【청구항 12】  Claim 12
마이크로소자가구비된소자제공부재로부터 상기 마이크로소자가분리되면 서 전사필름의 일면에 제 1접착면적의 접착부위를가지며 접착되도록상기 전사필름 의 타면을상기 소자제공부재 방향으로가압하는전이부;  A transition part for pressing the other surface of the transfer film toward the element providing member so that the micro element is separated from the element providing member provided with a micro element and adhered to one surface of the transfer film with an adhesive part having a first adhesive area;
상기 전사필름의 흐름방향에 따라상기 전이부의 후단에 배치되고, 상기 전 사필름의 타면을 가압하여 상기 전사필름의 상기 일면이 볼록해지도록 벤딩함으로 써, 상기 마이크로 소자의 상기 접착부위 일부분을상기 전사필름으로부터 떨어뜨 려서 상기 제 1접착면적보다작은제 2접착면적으로축소하는가압부;  And a bending step of bending the other surface of the transfer film so that the one surface of the transfer film is convex so that a part of the adhesive part of the micro device is transferred to the transfer surface of the transfer film, An abutting portion which is separated from the film and is contracted to a second bonding area smaller than the first bonding area;
상기 흐름방향에 따라상기 가압부의 후단에 배치되고, 상기 가압부를거쳐 상기 접착부위가상기 제 2접착면적으로 축소된 상기 마이크로 소자가상기 전사필 름에서 분리되면서 타겟기판에 부착되도록 상기 전사필름을 상기 타겟기판 방향으 로가압하는전사부;를포함하는마이크로소자전사장치.  Wherein the micro-device is disposed at a rear end of the pressing portion along the flow direction, the micro-device having the bonding portion reduced to the second bonding area through the pressing portion is detached from the transfer film, And a transfer unit which presses the substrate toward the target substrate.
【청구항 13】  Claim 13
제 12항에 있어서,  13. The method of claim 12,
상기 흐름방향에 따라상기 소자제공부재의 전단에 구비되어 상기 전사필름 을지지하는제 1지지부;  A first supporting part provided at a front end of the element providing member along the flow direction to support the transfer film;
상기 제 1지지부와의 사이에 상기 전이부가위치되도록상기 소자제공부재의 후단에 구비되고, 상기 제 1지지부와함께상기 전사필름을지지하는제 2지지부; 2019/125013 1»(:1^1{2018/016357 A second supporting portion provided at a rear end of the element providing member such that the transition portion is positioned between the first supporting portion and the transfer supporting portion and supporting the transfer film together with the first supporting portion; 2019/125013 1 »(: 1 ^ 1 {2018/016357
상기 타겟기판의 전단에 구비되어 상기 전사필름을지지하는제 3지지부; 및 상기 제 3지지부와의 사이에 상기 전사부가위치되도록상기 타겟기판의 후단 에 구비되고, 상기 제 3지지부와 함께 상기 전사필름을 지지하는 제 4지지부;를 더 포함하는마이크로소자전사장치 . A third supporting unit provided at a front end of the target substrate to support the transfer film; And a fourth support portion provided at a rear end of the target substrate such that the transfer portion is positioned between the third support portion and the fourth support portion supporting the transfer film together with the third support portion.
5  5
【청구항 14】 14.
제 13항에 있어서,  14. The method of claim 13,
상기 제 2지지부 및 제 3지지부는상기 전사필름의 상기 일면을지지하며 , 상 기 전사필름에 접착된상기 마이크로소자가진입되는상황에서 상기 전사필름으로 부터 이격되도록하강이동되고, 상기 마이크로소자가통과된상황에서 상기 전사 10 필름에 밀착되도록상승이동되는마이크로소자전사장치 .  The second support portion and the third support portion support the one side of the transfer film and are moved downward to be separated from the transfer film in a state where the micro element bonded to the transfer film enters, The film is lifted so as to be in close contact with the transfer 10 film.
【청구항 15】  15.
제 14항에 있어서,  15. The method of claim 14,
상기 전사필름에 밀착되도록상승이동된상기 제 2지지부및상기 제 3지지부 의 최상부는상기 가압부의 하단부보다더 높은위치가되는마이크로소자전사장 15 치.  And the uppermost portion of the second support portion and the third support portion moved upward to be in close contact with the transfer film is positioned higher than the lower end portion of the pressurizing portion.
【청구항 16】  Claim 16
제 14항에 있어서,  15. The method of claim 14,
상기 가압부의 하단부는 상승 이동된 상기 제 2지지부 및 상기 제 3지지부의 상기 최상부보다낮은 위치가되도록상하방향으로 이동되는마이크로소자 전사 20 장치 .  And the lower end of the pressing portion is moved up and down so as to be positioned lower than the uppermost portion of the second supporting portion and the third supporting portion which are moved up.
PCT/KR2018/016357 2017-12-21 2018-12-20 Micro-device transfer method and micro-device transfer apparatus WO2019125013A1 (en)

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