WO2019123655A1 - Method for manufacturing display device, and apparatus for manufacturing display device - Google Patents

Method for manufacturing display device, and apparatus for manufacturing display device Download PDF

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Publication number
WO2019123655A1
WO2019123655A1 PCT/JP2017/046227 JP2017046227W WO2019123655A1 WO 2019123655 A1 WO2019123655 A1 WO 2019123655A1 JP 2017046227 W JP2017046227 W JP 2017046227W WO 2019123655 A1 WO2019123655 A1 WO 2019123655A1
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WO
WIPO (PCT)
Prior art keywords
photomask
light
display device
region
area
Prior art date
Application number
PCT/JP2017/046227
Other languages
French (fr)
Japanese (ja)
Inventor
達 岡部
信介 齋田
遼佑 郡司
博己 谷山
市川 伸治
浩治 神村
芳浩 仲田
彬 井上
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シャープ株式会社
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Priority to PCT/JP2017/046227 priority Critical patent/WO2019123655A1/en
Publication of WO2019123655A1 publication Critical patent/WO2019123655A1/en

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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Definitions

  • the present invention relates to a method of manufacturing a display device and the like.
  • Patent Document 1 discloses a method of manufacturing a display device provided with an OLED.
  • patent document 1 does not describe about manufacturing a display device provided with a large-sized display part.
  • An aspect of the present invention aims to realize a method for manufacturing a display device and a manufacturing apparatus capable of preferably manufacturing a display device including a large display portion.
  • the manufacturing method of the display device concerning one mode of the present invention is insulating that covers the edge of the light emitting element containing a lower electrode, a luminous layer, and an upper electrode, and the lower electrode.
  • a method of manufacturing a display device comprising a cover film comprising the steps of: applying a photosensitive material to the lower electrode; and exposing the photosensitive material in a first region using a first photomask. And a second exposure step of exposing the photosensitive material in a second region using a second photomask, wherein the first photomask and the second photomask are a light shielding portion that shields light.
  • a gray-tone mask having a light transmitting portion for transmitting light, and a half light transmitting portion having a transmittance between the light shielding portion and the light transmitting portion, and a first region to be exposed in the first exposure step; Dew in the second exposure step
  • the second regions correspond to different regions of the display region of the display device, and the half light transmitting portion includes a first portion and a second portion having a light transmittance smaller than that of the first portion.
  • the second portion of the half light transmitting portion is disposed in each of the first exposure step and the second exposure step.
  • a manufacturing device of a display device concerning one mode of the present invention is insulating which covers an edge of a light emitting element containing a lower electrode, a luminous layer, and an upper electrode, and the lower electrode.
  • a manufacturing apparatus of a display device comprising a cover film, comprising: a cover film forming apparatus for forming the cover film, wherein the cover film forming apparatus applies a photosensitive material to the lower electrode; And a second exposure step of exposing the photosensitive material of the second region using the second photomask, the first exposure step of exposing the photosensitive material of the first region using the photomask, and a second exposure step of exposing the photosensitive material of the second region using the second photomask.
  • the first photomask and the second photomask each include a light blocking portion that blocks light, a light transmitting portion that transmits light, and a half light transmitting portion having a transmittance between the light blocking portion and the light transmitting portion. It is a gray tone mask that The first area to be exposed in the first exposure step and the second area to be exposed in the second exposure step correspond to different areas of the display area of the display device, and the half light transmitting portion is The first exposure step and the first exposure step, in the overlapping area including the first area and the second area having a light transmittance smaller than that of the first area, and the first area and the second area overlap at each end. In each of the second exposure steps, the second portion of the semi-transmissive portion is disposed.
  • a display device including a large display portion can be preferably manufactured.
  • FIG. 5 is a flowchart illustrating an example of a method of manufacturing a display device according to Embodiment 1. It is sectional drawing which shows the structural example of the display part of the said display device. It is a flowchart which shows an example of the formation process of a light emitting element layer. It is a flowchart which shows an example of an anode cover film formation process. It is a top view which shows the structure of a gray tone mask. It is an enlarged view of the area
  • FIG. 5 It is a conceptual diagram of the exposure process with respect to the area
  • a) is a figure which shows the state of the photosensitive organic material M at the time of using the conventional gray tone mask
  • (b) is a figure which shows the state of the photosensitive organic material at the time of using the said gray tone mask.
  • (A) is an enlarged view of the area
  • (b) is an enlarged view of the area
  • FIG. 5 It is a conceptual diagram of the exposure process with respect to the area
  • (A) is an enlarged view of the area
  • (b) is an enlarged view of the area
  • (A) is an enlarged view which shows the structure of the edge part of the back side of the gray tone mask which concerns on Embodiment 2
  • (b) is an enlarged view which shows the structure of the edge part of the front side of the said gray tone mask.
  • (A) is an enlarged view which shows the structure of the edge part of the right side of the gray tone mask which concerns on Embodiment 3
  • (b) is an enlarged view which shows the structure of the edge part of the left side of the said gray tone mask.
  • Embodiment 1 Hereinafter, Embodiment 1 of the present invention will be described in detail with reference to the drawings.
  • FIG. 1 is a flowchart showing an example of a method of manufacturing the display device 2 in the present embodiment.
  • FIG. 2 is a cross-sectional view showing a configuration example of the display unit 2 a of the display device 2.
  • “same layer” means being formed of the same material in the same process
  • “lower layer” means being formed in a process prior to the layer to be compared
  • “Upper layer” means that it is formed in a later process than the layer to be compared.
  • the resin layer 12 is formed on a translucent support substrate (for example, a mother glass substrate) 10 (step S1).
  • the barrier layer 3 is formed (step S2).
  • the TFT layer 4 is formed (step S3).
  • a top emission type light emitting element layer for example, an OLED element layer
  • step S4 Details of step S4 will be described later.
  • the sealing layer 6 is formed (step S5).
  • the functional film 39 is attached to the upper surface of the sealing layer 6 (step S6).
  • an electronic circuit board for example, an IC chip
  • the display device 2 is obtained (step S7).
  • the above steps are performed by the display device manufacturing apparatus.
  • Examples of the material of the resin layer 12 include polyimide resin, acrylic resin, and epoxy resin. Examples of the material of the lower film 10 include polyethylene terephthalate (PET).
  • the barrier layer 3 is a layer that prevents foreign matter such as water and oxygen from permeating the TFT layer 4 and the light emitting element layer 5 when the display device is used, and is formed by, for example, a chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a stacked film thereof can be used.
  • the TFT layer 4 includes the semiconductor film 15, the inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, the gate electrode GE above the inorganic insulating film 16, and the inorganic insulating layer above the gate electrode GE.
  • the thin film transistor (TFT) Tr is configured to include the semiconductor film 15, the inorganic insulating film 16 (gate insulating film), and the gate electrode GE.
  • the semiconductor film 15 is made of, for example, low temperature polysilicon (LTPS) or an oxide semiconductor.
  • LTPS low temperature polysilicon
  • FIG. 2 shows a TFT in which the semiconductor film 15 is a channel in a top gate structure, it may have a bottom gate structure (for example, when the channel of the TFT is an oxide semiconductor).
  • the gate electrode GE, the capacitance electrode CE, and the source wiring SH are made of, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), copper (Cu) It is comprised by the single layer film or laminated film of the metal containing at least one.
  • the inorganic insulating films 16, 18 and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method.
  • the planarizing film (interlayer insulating film) 21 can be made of, for example, a coatable photosensitive organic material such as polyimide or acrylic.
  • a light emitting element layer (light emitting element) 5 (for example, an organic light emitting diode layer) has an anode (anode, lower electrode) 22 above the planarization film 21 and an anode cover film (cover film) covering the edge of the anode 22.
  • a light emitting element (for example, OLED: organic light emitting diode) including a cathode (cathode, upper electrode) 25 and a sub-pixel circuit for driving the same are provided.
  • the anode cover film 23 is an organic insulating film, and is formed, for example, by applying a photosensitive organic material (photosensitive material) M such as polyimide or acrylic and then patterning it by a photolithography method. Details of the method of forming the anode cover film 23 will be described later.
  • a photosensitive organic material (photosensitive material) M such as polyimide or acrylic
  • the EL layer 24 is configured, for example, by laminating a hole transport layer, a light emitting layer, and an electron transport layer in order from the lower layer side.
  • the light emitting layer is formed in a region (sub-pixel region) surrounded by the partition wall formed of the anode cover film 23 by a vapor deposition method or an inkjet method.
  • the hole transport layer and the electron transport layer may be formed in an island shape for each sub-pixel, or may be formed in a solid shape as a common layer of a plurality of sub-pixels.
  • the anode 22 is formed of, for example, a laminate of ITO (Indium Tin Oxide) and an alloy containing Ag, and has light reflectivity.
  • the cathode 25 can be made of a light-transmitting conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zincum Oxide).
  • the drive current between the anode 22 and the cathode 25 causes holes and electrons to recombine in the EL layer 24 and the resulting excitons fall to the ground state, whereby light is generated. Released. Since the cathode 25 is translucent and the anode 22 is light reflective, the light emitted from the EL layer 24 is directed upward to be top emission.
  • the sealing layer 6 includes an inorganic sealing film 26 above the cathode 25, an organic sealing film 27 above the inorganic sealing film 26, and an inorganic sealing film 28 above the organic sealing film 27.
  • the inorganic sealing films 26 and 28 can be formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method.
  • the organic sealing film 27 can be made of a coatable photosensitive organic material such as polyimide or acrylic.
  • the functional film 39 has, for example, an optical compensation function, a touch sensor function, a protection function, and the like.
  • FIG. 3 is a flowchart showing an example of the process of forming the light emitting element layer 5 (step S4 described above).
  • the formation process of the light emitting element layer 5 is, as shown in FIG. 3, (1) Anode formation process (step S11), (2) anode cover film formation process (step S12), (3) EL layer formation process (step S13) And (4) a cathode formation step (step S14), and the respective steps are performed in this order.
  • the anode formation step is a step of forming the anode 22 by laminating ITO and an alloy containing Ag using sputtering.
  • the anodes 22 are formed in an island according to the sub-pixels of the EL layer 24.
  • the anode cover film forming step is a step of forming an insulating anode cover film 23 which covers the edge region of the anode 22.
  • FIG. 4 is a flow chart showing an example of an anode cover film forming step.
  • a photosensitive organic material M for example, photosensitive polyimide, photosensitive acrylic, etc.
  • the photosensitive organic material M is patterned into a predetermined shape by performing an exposure process (also referred to as a shot in the following description) and a development process on the coating step (step S21) and (b) photosensitive organic material M.
  • a heat treatment baking
  • the photosensitive organic material M patterned into a predetermined shape to form the anode cover film 23 step S23.
  • the photosensitive organic material M in the present embodiment is a positive type material, and when irradiated with light, the solubility in the developer used in the above development processing is increased, and the photosensitive organic material M is removed in the above development processing.
  • FIG. 5 is a plan view showing the structure of the gray tone mask 40 used in the exposure process.
  • FIG. 6 is an enlarged view of a region D1 in FIG.
  • FIG. 7 is an enlarged view of a region D6 in FIG.
  • the + X axis direction in FIG. 5 may be described as the right direction, the ⁇ X axis direction as the left direction, the + Y axis direction as the front direction, and the ⁇ Y axis direction as the rear direction.
  • FIG. 6 is an enlarged view of the region D1 of FIG.
  • the gray tone mask 40 has a rectangular shape.
  • the gray tone mask 40 has a light transmitting portion 41 for transmitting light, a half having a light transmittance between the light transmittance of the light transmitting portion 41 and the light transmittance of the light shielding portion 43 described later.
  • a light transmitting portion 42 and a light shielding portion 43 which shields light by forming a light shielding film in a solid state are provided. As shown in FIG.
  • the half light transmitting portion 42 is a region in which a fine pattern is formed on the light shielding film below the exposure limit, and specifically, a strip pattern 42A (a region where the light shielding film is left) , And slits 42B (apertures, fine slits) are alternately formed.
  • FIG. 8 is a plan view showing an anode cover film 23 formed by performing exposure processing using a gray tone mask 40, development processing, and thermal processing.
  • FIG. 8 shows the anode cover film 23 in the region shown in the enlarged view of the gray tone mask 40 shown in FIG.
  • the photosensitive organic material M is exposed by a large amount of light in the exposure process at the portion corresponding to the light transmitting portion 41 of the gray tone mask 40, and the photosensitive organic material M is removed by the development process. .
  • an opening 23 a is formed in the anode cover film 23 at the corresponding portion.
  • the opening 23 a is an opening in which the EL layer 24 is directly formed on the upper surface of the anode 22 and which becomes a light emitting region.
  • the photosensitive organic material M is exposed with a small amount of light in the exposure process at a portion corresponding to the semi-light transmitting portion 42 of the gray tone mask 40, so a part of the photosensitive organic material M is removed by the developing process. As a result, a flat portion 23 c is formed in the anode cover film 23 at the corresponding portion.
  • the photosensitive organic material M Since the photosensitive organic material M is not exposed in the exposure processing at the portion corresponding to the light shielding portion 43 of the gray tone mask 40, it is not removed by the development processing. As a result, a protruding portion 23d that protrudes upward from the flat portion 23c is formed.
  • the protrusion 23 d is formed to prevent the mask used for vapor deposition and the anode cover film 23 from coming in contact with each other in an EL layer forming process described later.
  • the exposure process using the gray tone mask 40 needs to be performed multiple times.
  • a method of performing exposure processing on different regions of the display region of the display device will be described.
  • FIG. 9 is a conceptual view of exposure processing (hereinafter referred to as first exposure processing and second exposure processing) on regions adjacent in the front-rear direction. Thereafter, as shown in FIG. 9, the rear region exposed by the first exposure processing (first exposure step) is exposed by the first region D7 and the second exposure processing (second exposure step). The area is described as a second area D8.
  • first exposure processing and second exposure processing exposure processing
  • FIG. 10 shows the photosensitive organic material M after the exposure processing and the development processing have been performed on the overlapping region PD using the half light transmitting portion 42 of the gray tone mask 40 in the first exposure processing and the second exposure processing, respectively.
  • 7A shows a state of the photosensitive organic material M when using a conventional gray tone mask
  • FIG. 7B shows using the gray tone mask 40 according to the present embodiment. It is a figure which shows the state of the photosensitive organic material M in the case.
  • the area occupied by the strip pattern 42A and the area occupied by the slits 42B are constant in all the regions. Therefore, when the overlapping region PD is exposed using the half light transmitting portion 42 of the gray tone mask 40 in the first exposure processing and the second exposure processing, the photosensitive organic material M is exposed twice. .
  • development processing is performed on such a photosensitive organic material M, as shown in FIG. 10A, in the photosensitive organic material M, the region corresponding to the overlapping region PD is a semi-transmissive portion 42.
  • step S23 Compared to the area subjected to one exposure process using Even if the heat treatment step (step S23) is performed on such a photosensitive organic material M, the recessed portion can not be completely filled, and a groove is formed in the anode cover film. Therefore, there is a problem that it causes a display defect of the display device.
  • the gray tone mask 40 in the present embodiment is formed as follows.
  • (A) of FIG. 11 is an enlarged view of the area D2 in FIG. 5, and (b) is an enlarged view of the area D3 in FIG.
  • the gray tone mask 40 in the present embodiment has a strip shape in the other region.
  • a band-like pattern 42C (second part) having a width in the front-rear direction wider than the pattern 42A (first part) is formed at an end in the front-rear direction.
  • the strip-shaped pattern 42C having a light transmittance of 0% is disposed to the superimposed region PD.
  • a first exposure process and a second exposure process are performed.
  • the light is not substantially irradiated to the photosensitive organic material M located in the overlapping region PD (however, the light is slightly irradiated by the light diffraction) ).
  • the photosensitive organic material M after the development processing was subjected to one exposure processing using the semi-light transmitting portion 42 in the region corresponding to the overlapping region PD.
  • step S23 It has a shape protruding upward compared to the region (however, the shape is lower than the height of the photosensitive organic material M in the region corresponding to the light shielding portion 43).
  • FIG. 12 is a conceptual diagram of exposure processing (hereinafter referred to as third exposure processing and fourth exposure processing) on regions adjacent in the left-right direction.
  • third exposure processing and fourth exposure processing exposure processing on regions adjacent in the left-right direction.
  • the area on the left side exposed by the third exposure process is the third area D9
  • the area on the right side exposed by the fourth exposure process Will be described as a fourth area D10.
  • FIG. 13 is an enlarged view of the region D4 in FIG. 5, and (b) is an enlarged view of the region D5 in FIG.
  • the slits 42B are formed to extend in the front-rear direction at the end in the left-right direction (in other words, It is formed parallel to the longitudinal direction of the overlapping area PD).
  • the band-like pattern 42A also extends in the front-rear direction.
  • a band-shaped pattern 42C whose width in the left-right direction is wider than the band-shaped patterns 42A in the other regions is formed at the end in the left-right direction.
  • beltlike pattern 42C is arranged to superposition field PD, and the 1st exposure processing and the 2nd exposure Do the processing.
  • the photosensitive organic material M after the development processing was subjected to one exposure processing using the semi-light transmitting portion 42 in the region corresponding to the overlapping region PD. It has a shape projecting upward relative to the region.
  • the portion protruding upward is flattened by heat dripping. This makes it possible to prevent display defects of the display device 2 from occurring.
  • the hole transport layer, the light emitting layer, and the electron transport layer are laminated in order from the lower layer side.
  • the light emitting layer is formed in an island shape for each sub-pixel by a vapor deposition method or an inkjet method. More specifically, the light emitting layer is formed by the vapor deposition method or the ink jet method in a state where the mask is in contact with the protrusion 23 d formed in the anode cover film forming step. As a result, the mask can be prevented from coming into contact with the anode cover film 23, and thus the anode cover film 23 can be prevented from peeling off.
  • the cathode forming step is a step of forming the cathode 25 using sputtering.
  • FIG. 14 is a block diagram showing a configuration of a display device manufacturing apparatus 70 (manufacturing apparatus) for manufacturing the display device 2 in the present embodiment.
  • the display device manufacturing apparatus 70 controls the barrier layer forming apparatus 72, the TFT layer forming apparatus 73, the light emitting element layer forming apparatus 74, the sealing layer forming apparatus 76, and these devices. And a controller 71.
  • the light emitting element layer forming device 74 includes an anode cover film forming device (cover film forming device) 75.
  • the barrier layer forming device 72 performs step S2 in FIG.
  • the TFT layer forming device 73 performs step S3 in FIG.
  • the light emitting element layer forming device 74 performs step S4 in FIG.
  • the anode cover film forming apparatus 75 performs step S12 in FIG. 3 (ie, S21 to S23 in FIG. 4).
  • the sealing layer forming device 76 performs step S5 in FIG.
  • the present embodiment is different from the first embodiment in that a gray tone mask 40A described later is used in place of the gray tone mask 40 in the first embodiment.
  • FIG. 15A is an enlarged view showing the structure of the rear end of the gray tone mask 40A in the present embodiment
  • FIG. 15B is an enlarged view showing the structure of the front end of the gray tone mask 40A.
  • FIG. As shown in (a) and (b) of FIG. In the vicinity of the end in the front-rear direction, the distance between the slits 42B of the semi-light transmitting portion 42 is larger than the distance between the slits 42B in the other region. In other words, a strip-shaped pattern 42D which is wider than the strip-shaped patterns 42A in the other regions is formed at the corresponding portion.
  • the end of the light is transmitted so that the amount of light transmission (light transmission) of the half light transmitting portion 42 in the vicinity of the end is 50% or less of the light transmission of the half light transmitting portion 42 in the other region.
  • An interval between the slits 42B in the vicinity of the portion is set.
  • the area of the semi-transmissive portion 42 where the strip pattern 42D is formed is referred to as an area D11 (second portion).
  • the region D11 is arranged on the overlapping region PD to perform the first exposure processing and the 2 Perform exposure processing.
  • the irradiation amount of light to the photosensitive organic material M located in the overlapping region PD is set to the irradiation amount of light in one exposure processing using the half light transmitting portion 42 It can be Thereby, as shown in (b) of FIG. 10, the photosensitive organic material M after the development processing was subjected to one exposure processing using the semi-light transmitting portion 42 in the region corresponding to the overlapping region PD.
  • step S23 It has a shape projecting upward relative to the region.
  • the present embodiment is different from the first embodiment in that a gray tone mask 40B described later is used instead of the gray tone mask 40 in the first embodiment.
  • FIG. 16A is an enlarged view showing the structure of the right end of the gray tone mask 40B in the present embodiment
  • FIG. 16B is an enlarged view showing the structure of the left end of the gray tone mask 40B. It is.
  • slits 42E extending in the front-rear direction are formed, and the distance between the slits 42E is larger than the distance between the slits in other regions.
  • a strip-shaped pattern 42F and a strip-shaped pattern 42D which are wider than the strip-shaped patterns 42A in the other regions, are formed at the locations.
  • the light transmission amount (light transmission amount) of the semi-light transmission portion 42 in the vicinity of the end in the left-right direction is 50% or less of the light transmission amount of the semi-light transmission portion 42 in the other region
  • the distance between the slits 42E in the vicinity of the end is set.
  • the overlapping region PD is exposed using the half light transmitting portion 42 of the gray tone mask 40B, the slits 42E, the band-shaped patterns 42F, and the band-shaped patterns 42D with respect to the overlapping region PD.
  • the first exposure process and the second exposure process are performed by arranging a part of Thereby, in the first exposure processing and the second exposure processing, the irradiation amount of light to the photosensitive organic material M located in the overlapping region PD is set to the irradiation amount of light in one exposure processing using the half light transmitting portion 42 It can be Thereby, as shown in (b) of FIG.
  • the photosensitive organic material M after the development processing was subjected to one exposure processing using the semi-light transmitting portion 42 in the region corresponding to the overlapping region PD. It has a shape protruding upward compared to the region (however, the shape is lower than the height of the photosensitive organic material M in the region corresponding to the light shielding portion 43).
  • the portion protruding upward is flattened by heat dripping. This makes it possible to prevent display defects of the display device 2 from occurring.
  • a method of manufacturing a display device comprises a light emitting element including a lower electrode (anode 22), a light emitting layer (EL layer 24), and an upper electrode (cathode 25), and an insulating material covering an edge of the lower electrode.
  • Transparency between A first region to be exposed in the first exposure step and a second region to be exposed in the second exposure step are each a display of the display device
  • the semi-transmissive portion includes a first portion (strip pattern 42A) and a second portion (strip pattern 42C, region D11) having a light transmittance smaller than that of the first portion.
  • the second portion of the semitransparent portion is disposed in each of the first exposure step and the second exposure step.
  • the overlapping region is more influenced by the exposure processing than the region other than the overlapping region.
  • the photosensitive material after development processing is subjected to a single exposure process using the half light transmitting part in the region corresponding to the overlapping region. It has a shape that protrudes upward as compared to the region where it has been performed.
  • the protruding portion is flattened by heat dripping. This makes it possible to prevent display defects of the display device.
  • the photosensitive material is a positive photosensitive material.
  • the half light transmitting portion includes a plurality of fine slits, and the second portion has a smaller distance between adjacent fine slits than the first portion.
  • the semi-light transmitting portion is formed with a strip-shaped pattern formed of a light shielding portion between the plurality of fine slits, and the second portion has a width of the strip-shaped pattern more than the first portion. wide.
  • the first photomask and the second photomask have a rectangular shape, and at the end portions of the first photomask and the second photomask, the belt-like pattern is the first photomask and It is formed in parallel with the side of the end of the second photomask.
  • the band-like pattern is disposed in each of the first exposure process and the second exposure process.
  • the light shielding portion is disposed in any one of the first exposure process and the second exposure process.
  • the first photomask and the second photomask have a first direction, in which the strip-shaped patterns in the first photomask and the second photomask extend
  • the first photomask and the second photomask are The direction in which the strip pattern extends at the end of the vertical side is formed so as to be parallel to the sides of the first photomask and the second photomask by rotating 90 ° in the extending direction
  • the width of the strip pattern is the first It is larger than the width of the strip pattern inside the photomask and the second photomask.
  • the light transmittance in the second part is 50% or less of the light transmission amount of the first part.
  • the overlapping region is in a rectangular shape, and the fine slits are formed in parallel with the longitudinal direction of the overlapping region.
  • the method further includes a heat treatment step of heat treating the patterned photosensitive material after the first exposure step and the second exposure step, and the first heat treatment step is performed in the region other than the overlapping region.
  • An opening in which a light emitting layer of the display device is formed is formed in a region corresponding to the light transmitting portion of the mask or the second photomask, and the light shielding portion of the first photomask or the second photomask is formed. In the region corresponding to a, a protrusion protruding upward with respect to the cover film is formed.
  • a display device manufacturing apparatus (75) includes a light emitting element including a lower electrode, a light emitting layer, and an upper electrode, and an insulating cover film covering an edge of the lower electrode.
  • a cover film forming apparatus for forming the cover film wherein the cover film forming apparatus includes the steps of: applying a photosensitive material to the lower electrode; and using the first photomask to form the cover film.
  • a gray tone mask having a light shielding portion for shielding light, a light transmitting portion for transmitting light, and a half light transmitting portion having a transmittance between the light shielding portion and the light transmitting portion; Exposure in the exposure process
  • the first area and the second area to be exposed in the second exposure step correspond to different areas of the display area of the display device, and the semi-transmissive portion includes a first portion and the first portion.
  • the region including the second portion having a light transmittance smaller than that of the second region and the first region and the second region overlap at each end portion is the region in the first exposure step and the second exposure step.
  • the second part of the half light transmitting part is disposed.

Abstract

A method for manufacturing a display device, the method including a step for applying a photosensitive substance onto an anode, and a step for exposing the photosensitive substance in a first region and a second region using a gray-tone mask. A region of a semi-translucent part of the gray-tone mask that transmits less light than other regions is disposed in a region in which the first region and the second region overlap.

Description

表示デバイスの製造方法、および表示デバイスの製造装置Display device manufacturing method and display device manufacturing apparatus
 本発明は、表示デバイスの製造方法などに関する。 The present invention relates to a method of manufacturing a display device and the like.
 従来、OLED(Organic Light Emitting Diode:有機発光ダイオード)を備えた表示デバイスが知られている。例えば、特許文献1には、OLEDを備えた表示デバイスの製造方法が開示されている。 DESCRIPTION OF RELATED ART Conventionally, the display device provided with OLED (Organic Light Emitting Diode: Organic light emitting diode) is known. For example, Patent Document 1 discloses a method of manufacturing a display device provided with an OLED.
日本国公開特許公報「特開2015-22914号(2015年2月2日公開)」Japanese Patent Publication "Japanese Patent Application Laid-Open No. 2015-22914 (released on February 2, 2015)"
 しかしながら、特許文献1には、大型の表示部を備える表示デバイスを製造することについて記載されていない。 However, patent document 1 does not describe about manufacturing a display device provided with a large-sized display part.
 本発明の一態様は、大型の表示部を備える表示デバイスを好適に製造することができる表示デバイスの製造方法、および製造装置を実現することを目的とする。 An aspect of the present invention aims to realize a method for manufacturing a display device and a manufacturing apparatus capable of preferably manufacturing a display device including a large display portion.
 上記の課題を解決するために、本発明の一態様に係る表示デバイスの製造方法は、下側電極、発光層、および上側電極を含む発光素子と、前記下側電極のエッジを覆う絶縁性のカバー膜とを備える表示デバイスの製造方法であって、前記下側電極に感光性物質を塗布する工程と、第1フォトマスクを用いて第1領域の前記感光性物質を露光する第1露光工程と、第2フォトマスクを用いて第2領域の前記感光性物質を露光する第2露光工程と、を含み、前記第1フォトマスクおよび前記第2フォトマスクは、光を遮光する遮光部と、光を透過させる光透過部と、前記遮光部と前記光透過部の間の透過率を有する半光透過部とを有するグレートーンマスクであり、前記第1露光工程において露光する第1領域と、前記第2露光工程において露光する第2領域とは、それぞれ、前記表示デバイスの表示領域の異なる領域に対応し、前記半光透過部は、第1部と、前記第1部よりも光透過率が小さい第2部とを含み、前記第1領域と前記第2領域とがそれぞれの端部で重なる重畳領域については、前記第1露光工程および前記第2露光工程それぞれにおいて、前記半光透過部の第2部を配する。 In order to solve the above-mentioned subject, the manufacturing method of the display device concerning one mode of the present invention is insulating that covers the edge of the light emitting element containing a lower electrode, a luminous layer, and an upper electrode, and the lower electrode. 1. A method of manufacturing a display device comprising a cover film, comprising the steps of: applying a photosensitive material to the lower electrode; and exposing the photosensitive material in a first region using a first photomask. And a second exposure step of exposing the photosensitive material in a second region using a second photomask, wherein the first photomask and the second photomask are a light shielding portion that shields light. A gray-tone mask having a light transmitting portion for transmitting light, and a half light transmitting portion having a transmittance between the light shielding portion and the light transmitting portion, and a first region to be exposed in the first exposure step; Dew in the second exposure step The second regions correspond to different regions of the display region of the display device, and the half light transmitting portion includes a first portion and a second portion having a light transmittance smaller than that of the first portion. In the overlapping region where the first region and the second region overlap at their respective end portions, the second portion of the half light transmitting portion is disposed in each of the first exposure step and the second exposure step. .
 上記の課題を解決するために、本発明の一態様に係る表示デバイスの製造装置は、下側電極、発光層、および上側電極を含む発光素子と、前記下側電極のエッジを覆う絶縁性のカバー膜とを備える表示デバイスの製造装置であって、前記カバー膜を形成するカバー膜形成装置を含み、前記カバー膜形成装置は、前記下側電極に感光性物質を塗布する工程と、第1フォトマスクを用いて第1領域の前記感光性物質を露光する第1露光工程と、第2フォトマスクを用いて第2領域の前記感光性物質を露光する第2露光工程と、を含み、前記第1フォトマスクおよび前記第2フォトマスクは、光を遮光する遮光部と、光を透過させる光透過部と、前記遮光部と前記光透過部の間の透過率を有する半光透過部とを有するグレートーンマスクであり、前記第1露光工程において露光する第1領域と、前記第2露光工程において露光する第2領域とは、それぞれ、前記表示デバイスの表示領域の異なる領域に対応し、前記半光透過部は、第1部と、前記第1部よりも光透過率が小さい第2部とを含み、前記第1領域と前記第2領域とがそれぞれの端部で重なる重畳領域については、前記第1露光工程および前記第2露光工程それぞれにおいて、前記半光透過部の第2部を配する。 In order to solve the above-mentioned subject, a manufacturing device of a display device concerning one mode of the present invention is insulating which covers an edge of a light emitting element containing a lower electrode, a luminous layer, and an upper electrode, and the lower electrode. 1. A manufacturing apparatus of a display device comprising a cover film, comprising: a cover film forming apparatus for forming the cover film, wherein the cover film forming apparatus applies a photosensitive material to the lower electrode; And a second exposure step of exposing the photosensitive material of the second region using the second photomask, the first exposure step of exposing the photosensitive material of the first region using the photomask, and a second exposure step of exposing the photosensitive material of the second region using the second photomask. The first photomask and the second photomask each include a light blocking portion that blocks light, a light transmitting portion that transmits light, and a half light transmitting portion having a transmittance between the light blocking portion and the light transmitting portion. It is a gray tone mask that The first area to be exposed in the first exposure step and the second area to be exposed in the second exposure step correspond to different areas of the display area of the display device, and the half light transmitting portion is The first exposure step and the first exposure step, in the overlapping area including the first area and the second area having a light transmittance smaller than that of the first area, and the first area and the second area overlap at each end. In each of the second exposure steps, the second portion of the semi-transmissive portion is disposed.
 本発明の一態様に係る表示デバイスの製造方法または表示デバイスの製造装置によれば、大型の表示部を備える表示デバイスを好適に製造することができる。 According to the method for manufacturing a display device or the apparatus for manufacturing a display device according to one aspect of the present invention, a display device including a large display portion can be preferably manufactured.
実施形態1に係る表示デバイスの製造方法の一例を示すフローチャートである。5 is a flowchart illustrating an example of a method of manufacturing a display device according to Embodiment 1. 上記表示デバイスの表示部の構成例を示す断面図である。It is sectional drawing which shows the structural example of the display part of the said display device. 発光素子層の形成工程の一例を示すフローチャートである。It is a flowchart which shows an example of the formation process of a light emitting element layer. アノードカバー膜形成工程の一例を示すフローチャートである。It is a flowchart which shows an example of an anode cover film formation process. グレートーンマスクの構造を示す平面図である。It is a top view which shows the structure of a gray tone mask. 図5の領域D1の拡大図である。It is an enlarged view of the area | region D1 of FIG. 図6の領域D6の拡大図である。It is an enlarged view of the area | region D6 of FIG. 上記グレートーンマスクを用いた露光処理、現像処理、および熱工程処理を行うことにより形成されるアノードカバー膜を示す平面図である。It is a top view which shows the anode cover film formed by performing the exposure process using the said gray tone mask, development process, and a heat process process. 前後方向に隣接する領域に対する露光処理の概念図である。It is a conceptual diagram of the exposure process with respect to the area | region adjacent to the front-back direction. 第1露光処理および第2露光処理においてそれぞれグレートーンマスクの半光透過部を用いて重畳領域に対して露光処理および現像処理を行った後の感光性有機材料の様子を示すものであり、(a)は従来のグレートーンマスクを用いた場合の感光性有機材料Mの状態を示す図であり、(b)は上記グレートーンマスクを用いた場合の感光性有機材料の状態を示す図である。This shows the state of the photosensitive organic material after the exposure processing and the development processing are performed on the overlapping region using the half light transmitting portion of the gray tone mask in the first exposure processing and the second exposure processing, respectively. a) is a figure which shows the state of the photosensitive organic material M at the time of using the conventional gray tone mask, (b) is a figure which shows the state of the photosensitive organic material at the time of using the said gray tone mask. . (a)は、図5における領域D2の拡大図であり、(b)は、図5における領域D3の拡大図である。(A) is an enlarged view of the area | region D2 in FIG. 5, (b) is an enlarged view of the area | region D3 in FIG. 左右方向に隣接する領域に対する露光処理の概念図である。It is a conceptual diagram of the exposure process with respect to the area | region adjacent to the left-right direction. (a)は、図5における領域D4の拡大図であり、(b)は、図5における領域D5の拡大図である。(A) is an enlarged view of the area | region D4 in FIG. 5, (b) is an enlarged view of the area | region D5 in FIG. 上記表示デバイスを製造する表示デバイス製造装置の構成を示すブロック図である。It is a block diagram which shows the structure of the display device manufacturing apparatus which manufactures the said display device. (a)は、実施形態2に係るグレートーンマスクの後側の端部の構造を示す拡大図であり、(b)は、上記グレートーンマスクの前側の端部の構造を示す拡大図である。(A) is an enlarged view which shows the structure of the edge part of the back side of the gray tone mask which concerns on Embodiment 2, (b) is an enlarged view which shows the structure of the edge part of the front side of the said gray tone mask. . (a)は、実施形態3に係るグレートーンマスクの右側の端部の構造を示す拡大図であり、(b)は、上記グレートーンマスクの左側の端部の構造を示す拡大図である。(A) is an enlarged view which shows the structure of the edge part of the right side of the gray tone mask which concerns on Embodiment 3, (b) is an enlarged view which shows the structure of the edge part of the left side of the said gray tone mask.
 〔実施形態1〕
 以下、本発明の実施形態1について図面を参照しながら詳細に説明する。
Embodiment 1
Hereinafter, Embodiment 1 of the present invention will be described in detail with reference to the drawings.
 図1は、本実施形態における表示デバイス2の製造方法の一例を示すフローチャートである。図2は、表示デバイス2の表示部2aの構成例を示す断面図である。以下においては、「同層」とは同一プロセスにて同材料で形成されていることを意味し、「下層」とは、比較対象の層よりも前のプロセスで形成されていることを意味し、「上層」とは比較対象の層よりも後のプロセスで形成されていることを意味する。 FIG. 1 is a flowchart showing an example of a method of manufacturing the display device 2 in the present embodiment. FIG. 2 is a cross-sectional view showing a configuration example of the display unit 2 a of the display device 2. In the following, “same layer” means being formed of the same material in the same process, and “lower layer” means being formed in a process prior to the layer to be compared , "Upper layer" means that it is formed in a later process than the layer to be compared.
 表示デバイス2の製造では、図1および図2に示すように、まず、透光性の支持基板(例えば、マザーガラス基板)10上に樹脂層12を形成する(ステップS1)。次いで、バリア層3を形成する(ステップS2)。次いで、TFT層4を形成する(ステップS3)。次いで、トップエミッション型の発光素子層(例えば、OLED素子層)5を形成する(ステップS4)。ステップS4の詳細については後述する。次いで、封止層6を形成する(ステップS5)。次いで、封止層6の上面に機能フィルム39を貼り付ける(ステップS6)。次いで、外部接続用の端子に電子回路基板(例えば、ICチップ)をマウントし、表示デバイス2とする(ステップS7)。なお、上記各ステップは表示デバイス製造装置が行う。 In the manufacture of the display device 2, as shown in FIG. 1 and FIG. 2, first, the resin layer 12 is formed on a translucent support substrate (for example, a mother glass substrate) 10 (step S1). Next, the barrier layer 3 is formed (step S2). Next, the TFT layer 4 is formed (step S3). Next, a top emission type light emitting element layer (for example, an OLED element layer) 5 is formed (step S4). Details of step S4 will be described later. Next, the sealing layer 6 is formed (step S5). Next, the functional film 39 is attached to the upper surface of the sealing layer 6 (step S6). Then, an electronic circuit board (for example, an IC chip) is mounted on the terminal for external connection, and the display device 2 is obtained (step S7). The above steps are performed by the display device manufacturing apparatus.
 樹脂層12の材料としては、例えば、ポリイミド樹脂、アクリル樹脂、エポキシ樹脂が挙げられる。下面フィルム10の材料としては、例えばポリエチレンテレフタレート(PET)が挙げられる。 Examples of the material of the resin layer 12 include polyimide resin, acrylic resin, and epoxy resin. Examples of the material of the lower film 10 include polyethylene terephthalate (PET).
 バリア層3は、表示デバイスの使用時に、水、酸素等の異物がTFT層4、発光素子層5に浸透することを防ぐ層であり、例えば、CVD(chemical vapor deposition)法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、またはこれらの積層膜で構成することができる。 The barrier layer 3 is a layer that prevents foreign matter such as water and oxygen from permeating the TFT layer 4 and the light emitting element layer 5 when the display device is used, and is formed by, for example, a chemical vapor deposition (CVD) method. A silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a stacked film thereof can be used.
 TFT層4は、半導体膜15と、半導体膜15よりも上層の無機絶縁膜16(ゲート絶縁膜)と、無機絶縁膜16よりも上層のゲート電極GEと、ゲート電極GEよりも上層の無機絶縁膜18と、無機絶縁膜18よりも上層の容量配線CEと、容量配線CEよりも上層の無機絶縁膜20と、無機絶縁膜20よりも上層のソース配線SHと、ソース配線SHよりも上層の平坦化膜21とを含む。 The TFT layer 4 includes the semiconductor film 15, the inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, the gate electrode GE above the inorganic insulating film 16, and the inorganic insulating layer above the gate electrode GE. A film 18, a capacitance wire CE above the inorganic insulating film 18, an inorganic insulating film 20 above the capacitance wire CE, a source wire SH above the inorganic insulating film 20, and a layer above the source wire SH And a planarization film 21.
 半導体膜15、無機絶縁膜16(ゲート絶縁膜)、およびゲート電極GEを含むように薄層トランジスタ(TFT)Trが構成される。 The thin film transistor (TFT) Tr is configured to include the semiconductor film 15, the inorganic insulating film 16 (gate insulating film), and the gate electrode GE.
 半導体膜15は、例えば低温ポリシリコン(LTPS)あるいは酸化物半導体で構成される。なお、図2では、半導体膜15をチャネルとするTFTがトップゲート構造で示されているが、ボトムゲート構造でもよい(例えば、TFTのチャネルが酸化物半導体の場合)。 The semiconductor film 15 is made of, for example, low temperature polysilicon (LTPS) or an oxide semiconductor. Although FIG. 2 shows a TFT in which the semiconductor film 15 is a channel in a top gate structure, it may have a bottom gate structure (for example, when the channel of the TFT is an oxide semiconductor).
 ゲート電極GE、容量電極CE、ソース配線SHは、例えば、アルミニウム(Al)、タングステン(W)、モリブデン(Mo)、タンタル(Ta)、クロム(Cr)、チタン(Ti)、銅(Cu)の少なくとも1つを含む金属の単層膜あるいは積層膜によって構成される。 The gate electrode GE, the capacitance electrode CE, and the source wiring SH are made of, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), copper (Cu) It is comprised by the single layer film or laminated film of the metal containing at least one.
 無機絶縁膜16・18・20は、例えば、CVD法によって形成された、酸化シリコン(SiOx)膜あるいは窒化シリコン(SiNx)膜またはこれらの積層膜によって構成することができる。平坦化膜(層間絶縁膜)21は、例えば、ポリイミド、アクリル等の塗布可能な感光性有機材料によって構成することができる。 The inorganic insulating films 16, 18 and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method. The planarizing film (interlayer insulating film) 21 can be made of, for example, a coatable photosensitive organic material such as polyimide or acrylic.
 発光素子層(発光素子)5(例えば、有機発光ダイオード層)は、平坦化膜21よりも上層のアノード(陽極、下側電極)22と、アノード22のエッジを覆うアノードカバー膜(カバー膜)23と、アノード22よりも上層のEL(エレクトロルミネッセンス)層24と、EL層24よりも上層のカソード25とを含み、サブピクセルごとに、島状のアノード22、島状のEL層24、およびカソード(陰極、上側電極)25を含む発光素子(例えば、OLED:有機発光ダイオード)と、これを駆動するサブ画素回路とが設けられる。 A light emitting element layer (light emitting element) 5 (for example, an organic light emitting diode layer) has an anode (anode, lower electrode) 22 above the planarization film 21 and an anode cover film (cover film) covering the edge of the anode 22. , An EL (electroluminescent) layer 24 above the anode 22, and a cathode 25 above the EL layer 24, and for each sub-pixel, an island-like anode 22, an island-like EL layer 24, and A light emitting element (for example, OLED: organic light emitting diode) including a cathode (cathode, upper electrode) 25 and a sub-pixel circuit for driving the same are provided.
 アノードカバー膜23は有機絶縁膜であり、例えば、ポリイミド、アクリル等の感光性有機材料(感光性物質)Mを塗布した後にフォトリソグラフィ法によってパターニングすることで形成される。アノードカバー膜23の形成方法の詳細については後述する。 The anode cover film 23 is an organic insulating film, and is formed, for example, by applying a photosensitive organic material (photosensitive material) M such as polyimide or acrylic and then patterning it by a photolithography method. Details of the method of forming the anode cover film 23 will be described later.
 EL層24は、例えば、下層側から順に、正孔輸送層、発光層、電子輸送層を積層することで構成される。発光層は、アノードカバー膜23からなる隔壁によって囲まれた領域(サブピクセル領域)に、蒸着法あるいはインクジェット法によって形成される。正孔輸送層および電子輸送層は、サブピクセルごとに島状に形成される場合もあるし、複数のサブピクセルの共通層としてベタ状に形成される場合もある。 The EL layer 24 is configured, for example, by laminating a hole transport layer, a light emitting layer, and an electron transport layer in order from the lower layer side. The light emitting layer is formed in a region (sub-pixel region) surrounded by the partition wall formed of the anode cover film 23 by a vapor deposition method or an inkjet method. The hole transport layer and the electron transport layer may be formed in an island shape for each sub-pixel, or may be formed in a solid shape as a common layer of a plurality of sub-pixels.
 アノード22は、例えばITO(Indium Tin Oxide)とAgを含む合金との積層によって構成され、光反射性を有する。カソード25は、ITO(Indium Tin Oxide)、IZO(Indium Zincum Oxide)等の透光性の導電材で構成することができる。 The anode 22 is formed of, for example, a laminate of ITO (Indium Tin Oxide) and an alloy containing Ag, and has light reflectivity. The cathode 25 can be made of a light-transmitting conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zincum Oxide).
 発光素子層5がOLED層である場合、アノード22およびカソード25間の駆動電流によって正孔と電子がEL層24内で再結合し、これによって生じたエキシトンが基底状態に落ちることによって、光が放出される。カソード25が透光性であり、アノード22が光反射性であるため、EL層24から放出された光は上方に向かい、トップエミッションとなる。 When the light emitting element layer 5 is an OLED layer, the drive current between the anode 22 and the cathode 25 causes holes and electrons to recombine in the EL layer 24 and the resulting excitons fall to the ground state, whereby light is generated. Released. Since the cathode 25 is translucent and the anode 22 is light reflective, the light emitted from the EL layer 24 is directed upward to be top emission.
 封止層6は、カソード25よりも上層の無機封止膜26と、無機封止膜26よりも上層の有機封止膜27と、有機封止膜27よりも上層の無機封止膜28とを含み、水、酸素等の異物の発光素子層5への浸透を防ぐ。無機封止膜26・28は、例えば、CVD法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、またはこれらの積層膜で構成することができる。有機封止膜27は、ポリイミド、アクリル等の塗布可能な感光性有機材料によって構成することができる。 The sealing layer 6 includes an inorganic sealing film 26 above the cathode 25, an organic sealing film 27 above the inorganic sealing film 26, and an inorganic sealing film 28 above the organic sealing film 27. To prevent the penetration of foreign substances such as water and oxygen into the light emitting element layer 5. The inorganic sealing films 26 and 28 can be formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method. The organic sealing film 27 can be made of a coatable photosensitive organic material such as polyimide or acrylic.
 機能フィルム39は、例えば、光学補償機能、タッチセンサ機能、保護機能等を有する。 The functional film 39 has, for example, an optical compensation function, a touch sensor function, a protection function, and the like.
 (発光素子層5の形成方法)
 図3は、発光素子層5の形成工程(上記ステップS4)の一例を示すフローチャートである。発光素子層5の形成工程は、図3に示すように、(1)アノード形成工程(ステップS11)、(2)アノードカバー膜形成工程(ステップS12)、(3)EL層形成工程(ステップS13)、および(4)カソード形成工程(ステップS14)を含んでおり、この順で各工程が行われる。
(Method of forming light emitting element layer 5)
FIG. 3 is a flowchart showing an example of the process of forming the light emitting element layer 5 (step S4 described above). The formation process of the light emitting element layer 5 is, as shown in FIG. 3, (1) Anode formation process (step S11), (2) anode cover film formation process (step S12), (3) EL layer formation process (step S13) And (4) a cathode formation step (step S14), and the respective steps are performed in this order.
 アノード形成工程では、スパッタリングを用いてITOとAgを含む合金とを積層することによってアノード22を形成する工程である。アノード22は、EL層24のサブピクセルに応じて島状に形成される。 The anode formation step is a step of forming the anode 22 by laminating ITO and an alloy containing Ag using sputtering. The anodes 22 are formed in an island according to the sub-pixels of the EL layer 24.
 アノードカバー膜形成工程は、アノード22のエッジ領域をカバーする絶縁性のアノードカバー膜23を形成する工程である。 The anode cover film forming step is a step of forming an insulating anode cover film 23 which covers the edge region of the anode 22.
 図4は、アノードカバー膜形成工程の一例を示すフローチャートである。アノードカバー膜形成工程は、図4に示すように、(a)アノード22の上面にアノードカバー膜23の原料となる感光性有機材料M(例えば、感光性ポリイミド、感光性アクリルなど)を塗布する塗布工程(ステップS21)、(b)感光性有機材料Mに対して露光処理(以降の説明では、ショットとも呼称する)および現像処理を施すことにより、感光性有機材料Mを所定の形状にパターニングするパターニング工程(ステップS22)、および、(c)所定の形状にパターニングされた感光性有機材料Mを熱処理(ベーク)してアノードカバー膜23を形成する熱処理工程(ステップS23)を含む。 FIG. 4 is a flow chart showing an example of an anode cover film forming step. In the anode cover film forming step, as shown in FIG. 4, (a) a photosensitive organic material M (for example, photosensitive polyimide, photosensitive acrylic, etc.) as a raw material of the anode cover film 23 is applied on the upper surface of the anode 22 The photosensitive organic material M is patterned into a predetermined shape by performing an exposure process (also referred to as a shot in the following description) and a development process on the coating step (step S21) and (b) photosensitive organic material M. And (c) heat treatment (baking) the photosensitive organic material M patterned into a predetermined shape to form the anode cover film 23 (step S23).
 本実施形態における感光性有機材料Mは、ポジ型の材料であり、光が照射されることにより上記現像処理において用いられる現像液に対して溶解性が増大し、上記現像処理において除去される。 The photosensitive organic material M in the present embodiment is a positive type material, and when irradiated with light, the solubility in the developer used in the above development processing is increased, and the photosensitive organic material M is removed in the above development processing.
 上記パターニング工程について詳細に説明する。本実施形態では、大型の表示部2aを実現するために、グレートーンマスク(フォトマスク)40(第1フォトマスク、第2フォトマスク)を用いて複数の領域に対してそれぞれ露光処理を行う。 The above patterning process will be described in detail. In the present embodiment, in order to realize the large display unit 2a, exposure processing is performed on a plurality of regions using a gray tone mask (photomask) 40 (a first photomask and a second photomask).
 図5は、上記露光処理において用いられるグレートーンマスク40の構造を示す平面図である。図6は、図5における領域D1の拡大図である。図7は、図6における領域D6の拡大図である。以降の説明では、図5における+X軸方向を右方向、-X軸方向を左方向、+Y軸方向を前方向、-Y軸方向を後方向として説明する場合がある。図6は、図5の領域D1の拡大図である。 FIG. 5 is a plan view showing the structure of the gray tone mask 40 used in the exposure process. FIG. 6 is an enlarged view of a region D1 in FIG. FIG. 7 is an enlarged view of a region D6 in FIG. In the following description, the + X axis direction in FIG. 5 may be described as the right direction, the −X axis direction as the left direction, the + Y axis direction as the front direction, and the −Y axis direction as the rear direction. FIG. 6 is an enlarged view of the region D1 of FIG.
 図5に示すように、グレートーンマスク40は、長方形状になっている。図6に示すように、グレートーンマスク40は、光を透過させる光透過部41、光透過部41の光透過率と後述する遮光部43の光透過率との間の光透過率を有する半光透過部42、および、遮光膜がベタに形成されることにより光を遮光する遮光部43を備える。半光透過部42は、図7に示すように、遮光膜に露光限界以下で微細パターンが形成された領域であって、具体的には、帯状パターン42A(遮光膜が残された領域)と、スリット42B(開口、微細スリット)とが交互に形成された形状を有する。 As shown in FIG. 5, the gray tone mask 40 has a rectangular shape. As shown in FIG. 6, the gray tone mask 40 has a light transmitting portion 41 for transmitting light, a half having a light transmittance between the light transmittance of the light transmitting portion 41 and the light transmittance of the light shielding portion 43 described later. A light transmitting portion 42 and a light shielding portion 43 which shields light by forming a light shielding film in a solid state are provided. As shown in FIG. 7, the half light transmitting portion 42 is a region in which a fine pattern is formed on the light shielding film below the exposure limit, and specifically, a strip pattern 42A (a region where the light shielding film is left) , And slits 42B (apertures, fine slits) are alternately formed.
 図8は、グレートーンマスク40を用いた露光処理、現像処理、および熱工程処理を行うことにより形成されるアノードカバー膜23を示す平面図である。なお、図8では、図6に示したグレートーンマスク40の拡大図に示す領域におけるアノードカバー膜23を示している。 FIG. 8 is a plan view showing an anode cover film 23 formed by performing exposure processing using a gray tone mask 40, development processing, and thermal processing. FIG. 8 shows the anode cover film 23 in the region shown in the enlarged view of the gray tone mask 40 shown in FIG.
 図8に示すように、グレートーンマスク40の光透過部41に対応する箇所では、露光処理において感光性有機材料Mが大きな光量によって露光されるため現像処理により感光性有機材料Mが除去される。その結果、当該箇所にアノードカバー膜23に開口部23aが形成される。開口部23aは、アノード22の上面にEL層24が直接形成され、発光領域となる開口部である。 As shown in FIG. 8, the photosensitive organic material M is exposed by a large amount of light in the exposure process at the portion corresponding to the light transmitting portion 41 of the gray tone mask 40, and the photosensitive organic material M is removed by the development process. . As a result, an opening 23 a is formed in the anode cover film 23 at the corresponding portion. The opening 23 a is an opening in which the EL layer 24 is directly formed on the upper surface of the anode 22 and which becomes a light emitting region.
 グレートーンマスク40の半光透過部42に対応する箇所では、露光処理において感光性有機材料Mが小さい光量によって露光されるため、現像処理により一部の感光性有機材料Mが除去される。その結果、当該箇所にアノードカバー膜23に平坦部23cが形成される。 The photosensitive organic material M is exposed with a small amount of light in the exposure process at a portion corresponding to the semi-light transmitting portion 42 of the gray tone mask 40, so a part of the photosensitive organic material M is removed by the developing process. As a result, a flat portion 23 c is formed in the anode cover film 23 at the corresponding portion.
 グレートーンマスク40の遮光部43に対応する箇所では、露光処理において感光性有機材料Mが露光されないため、現像処理によって除去されない。その結果、平坦部23cから上方に向かって突出する突出部23dが形成される。突出部23dは、後述するEL層形成工程において、蒸着のために用いられるマスクとアノードカバー膜23とが接触することを防ぐために形成される。 Since the photosensitive organic material M is not exposed in the exposure processing at the portion corresponding to the light shielding portion 43 of the gray tone mask 40, it is not removed by the development processing. As a result, a protruding portion 23d that protrudes upward from the flat portion 23c is formed. The protrusion 23 d is formed to prevent the mask used for vapor deposition and the anode cover film 23 from coming in contact with each other in an EL layer forming process described later.
 以上の説明では、グレートーンマスク40の中央領域におけるアノードカバー膜23の形成について説明した。以下の説明では、上記中央領域以外の領域(後述する重畳領域PD)におけるアノードカバー膜23の形成について説明する。 In the above description, the formation of the anode cover film 23 in the central region of the gray tone mask 40 has been described. In the following description, formation of the anode cover film 23 in a region other than the central region (superposed region PD described later) will be described.
 大型の表示部を実現するためには、グレートーンマスク40を用いた露光処理を複数回行う必要がある。以下では、表示デバイスの表示領域の異なる領域に露光処理を行う方法について説明する。 In order to realize a large display unit, the exposure process using the gray tone mask 40 needs to be performed multiple times. Hereinafter, a method of performing exposure processing on different regions of the display region of the display device will be described.
 まず、前後方向に隣接する領域に対して、第1露光処理および第2露光処理を行うことについて説明する。図9は、前後方向に隣接する領域に対する露光処理(以降では、第1露光処理および第2露光処理と呼称する)の概念図である。以降では、図9に示すように、第1露光処理(第1露光工程)によって露光される後側の領域を第1領域D7、第2露光処理(第2露光工程)によって露光される前側の領域を第2領域D8として説明する。 First, performing the first exposure process and the second exposure process on an area adjacent in the front-rear direction will be described. FIG. 9 is a conceptual view of exposure processing (hereinafter referred to as first exposure processing and second exposure processing) on regions adjacent in the front-rear direction. Thereafter, as shown in FIG. 9, the rear region exposed by the first exposure processing (first exposure step) is exposed by the first region D7 and the second exposure processing (second exposure step). The area is described as a second area D8.
 図9に示すように、互いに隣接する第1領域D7および第2領域D8に露光処理を行う際には、第1露光処理において露光され、かつ、第2露光処理において露光される領域(以降の説明では、重畳領域PDと呼称する)が存在する。第1露光処理および第2露光処理においてそれぞれグレートーンマスク40の半光透過部42を用いて重畳領域PDに対して露光処理を行った場合に発生する問題について図10を参照しながら説明する。図10は、第1露光処理および第2露光処理においてそれぞれグレートーンマスク40の半光透過部42を用いて重畳領域PDに対して露光処理および現像処理を行った後の感光性有機材料Mの様子を示すものであり、(a)は従来のグレートーンマスクを用いた場合の感光性有機材料Mの状態を示す図であり、(b)は本実施形態に係るグレートーンマスク40を用いた場合の感光性有機材料Mの状態を示す図である。 As shown in FIG. 9, when the exposure processing is performed on the first area D7 and the second area D8 adjacent to each other, the areas exposed in the first exposure processing and exposed in the second exposure processing (following In the description, the overlapping region PD is called). A problem that occurs when the overlapping region PD is subjected to the exposure processing using the half light transmitting portion 42 of the gray tone mask 40 in the first exposure processing and the second exposure processing will be described with reference to FIG. FIG. 10 shows the photosensitive organic material M after the exposure processing and the development processing have been performed on the overlapping region PD using the half light transmitting portion 42 of the gray tone mask 40 in the first exposure processing and the second exposure processing, respectively. 7A shows a state of the photosensitive organic material M when using a conventional gray tone mask, and FIG. 7B shows using the gray tone mask 40 according to the present embodiment. It is a figure which shows the state of the photosensitive organic material M in the case.
 従来のグレートーンマスクでは、半光透過部42において、帯状パターン42Aが占める面積と、スリット42Bが占める面積とがすべての領域で一定であった。そのため、第1露光処理および第2露光処理においてそれぞれグレートーンマスク40の半光透過部42を用いて重畳領域PDに対して露光処理を行った場合、感光性有機材料Mが2回露光される。このような感光性有機材料Mに対して現像処理を行った場合、図10の(a)に示すように、感光性有機材料Mは、当該重畳領域PDに対応する領域が半光透過部42を用いた1回の露光処理を行った領域に比べて下側に凹んだ形状となる。このような感光性有機材料Mに対して上記熱処理工程(ステップS23)を行ったとしても、凹んだ部分を完全に埋めることができず、アノードカバー膜に溝が形成された状態となる。そのため、表示デバイスの表示不良を引き起こしてしまうという問題があった。 In the conventional gray tone mask, in the semi-light transmitting portion 42, the area occupied by the strip pattern 42A and the area occupied by the slits 42B are constant in all the regions. Therefore, when the overlapping region PD is exposed using the half light transmitting portion 42 of the gray tone mask 40 in the first exposure processing and the second exposure processing, the photosensitive organic material M is exposed twice. . When development processing is performed on such a photosensitive organic material M, as shown in FIG. 10A, in the photosensitive organic material M, the region corresponding to the overlapping region PD is a semi-transmissive portion 42. Compared to the area subjected to one exposure process using Even if the heat treatment step (step S23) is performed on such a photosensitive organic material M, the recessed portion can not be completely filled, and a groove is formed in the anode cover film. Therefore, there is a problem that it causes a display defect of the display device.
 この問題に対して、本実施形態におけるグレートーンマスク40は、以下のように形成されている。図11の(a)は、図5における領域D2の拡大図であり、(b)は、図5における領域D3の拡大図である。図11の(a)および(b)に示すように、本実施形態におけるグレートーンマスク40は、前後方向の端部に半光透過部42が形成されている場合には、他の領域の帯状パターン42A(第1部)よりも前後方向の幅が広い帯状パターン42C(第2部)が前後方向の端部に形成されている。そして、グレートーンマスク40の半光透過部42を用いて重畳領域PDに対して露光処理を行う場合には、重畳領域PDに対して光透過率が0%である帯状パターン42Cを配して第1露光処理および第2露光処理を行う。これにより、第1露光処理および第2露光処理において、重畳領域PDに位置する感光性有機材料Mに対して光が実質的に照射されなくなる(ただし、光の回折によってわずかに光が照射される)。これにより、図10の(b)に示すように、現像処理後の感光性有機材料Mは、当該重畳領域PDに対応する領域が半光透過部42を用いた1回の露光処理を行った領域に比べて上に突出した形状となる(ただし、遮光部43に対応する領域の感光性有機材料Mの高さよりは低い形状となる)。このような形状の感光性有機材料Mに対して上記熱処理工程(ステップS23)を行った場合、上に突出した部分が熱だれによって平坦化される。これにより、表示デバイス2の表示不良が発生しないようにすることができる。 To address this problem, the gray tone mask 40 in the present embodiment is formed as follows. (A) of FIG. 11 is an enlarged view of the area D2 in FIG. 5, and (b) is an enlarged view of the area D3 in FIG. As shown in (a) and (b) of FIG. 11, when the semi-light transmitting portion 42 is formed at the end in the front-rear direction, the gray tone mask 40 in the present embodiment has a strip shape in the other region. A band-like pattern 42C (second part) having a width in the front-rear direction wider than the pattern 42A (first part) is formed at an end in the front-rear direction. Then, when performing exposure processing on the superimposed region PD using the half light transmitting portion 42 of the gray tone mask 40, the strip-shaped pattern 42C having a light transmittance of 0% is disposed to the superimposed region PD. A first exposure process and a second exposure process are performed. Thereby, in the first exposure process and the second exposure process, the light is not substantially irradiated to the photosensitive organic material M located in the overlapping region PD (however, the light is slightly irradiated by the light diffraction) ). Thereby, as shown in (b) of FIG. 10, the photosensitive organic material M after the development processing was subjected to one exposure processing using the semi-light transmitting portion 42 in the region corresponding to the overlapping region PD. It has a shape protruding upward compared to the region (however, the shape is lower than the height of the photosensitive organic material M in the region corresponding to the light shielding portion 43). When the above-described heat treatment step (step S23) is performed on the photosensitive organic material M having such a shape, the portion protruding upward is flattened by heat dripping. This makes it possible to prevent display defects of the display device 2 from occurring.
 次に、左右方向に隣接する領域に対して、それぞれ露光処理を行うことについて説明する。図12は、左右方向に隣接する領域に対する露光処理(以降では、第3露光処理および第4露光処理と呼称する)の概念図である。以降では、図12に示すように、第3露光処理(第1露光工程)によって露光される左側の領域を第3領域D9、第4露光処理(第2露光工程)によって露光される右側の領域を第4領域D10として説明する。 Next, performing exposure processing on each of the regions adjacent in the left-right direction will be described. FIG. 12 is a conceptual diagram of exposure processing (hereinafter referred to as third exposure processing and fourth exposure processing) on regions adjacent in the left-right direction. Thereafter, as shown in FIG. 12, the area on the left side exposed by the third exposure process (the first exposure step) is the third area D9, and the area on the right side exposed by the fourth exposure process (the second exposure process) Will be described as a fourth area D10.
 図13の(a)は、図5における領域D4の拡大図であり、(b)は、図5における領域D5の拡大図である。図13の(a)および(b)に示すように、本実施形態におけるグレートーンマスク40は、左右方向の端部では、スリット42Bが前後方向に延びるように形成されている(換言すれば、重畳領域PDの長手方向に平行に形成されている)。これにより、帯状パターン42Aも前後方向に延びている。また、グレートーンマスク40の左右方向の端部では、他の領域の帯状パターン42Aよりも左右方向の幅が広い帯状パターン42Cが左右方向の端部に形成されている。そして、グレートーンマスク40の半光透過部42を用いて重畳領域PDに対して露光処理を行う場合には、重畳領域PDに対して帯状パターン42Cを配して第1露光処理および第2露光処理を行う。これにより、第1露光処理および第2露光処理において、重畳領域PDに位置する感光性有機材料Mに対して光が実質的に照射されなくなる(ただし、光の回折によってわずかに光が照射される)。これにより、図10の(b)に示すように、現像処理後の感光性有機材料Mは、当該重畳領域PDに対応する領域が半光透過部42を用いた1回の露光処理を行った領域に比べて上に突出した形状となる。このような形状の感光性有機材料Mに対して上記熱処理工程(ステップS23)を行った場合、上に突出した部分が熱だれによって平坦化される。これにより、表示デバイス2の表示不良が発生しないようにすることができる。 (A) of FIG. 13 is an enlarged view of the region D4 in FIG. 5, and (b) is an enlarged view of the region D5 in FIG. As shown in (a) and (b) of FIG. 13, in the gray-tone mask 40 in the present embodiment, the slits 42B are formed to extend in the front-rear direction at the end in the left-right direction (in other words, It is formed parallel to the longitudinal direction of the overlapping area PD). Thus, the band-like pattern 42A also extends in the front-rear direction. Further, at an end in the left-right direction of the gray tone mask 40, a band-shaped pattern 42C whose width in the left-right direction is wider than the band-shaped patterns 42A in the other regions is formed at the end in the left-right direction. And when performing exposure processing to superposition field PD using half light penetration part 42 of gray tone mask 40, beltlike pattern 42C is arranged to superposition field PD, and the 1st exposure processing and the 2nd exposure Do the processing. Thereby, in the first exposure process and the second exposure process, the light is not substantially irradiated to the photosensitive organic material M located in the overlapping region PD (however, the light is slightly irradiated by the light diffraction) ). Thereby, as shown in (b) of FIG. 10, the photosensitive organic material M after the development processing was subjected to one exposure processing using the semi-light transmitting portion 42 in the region corresponding to the overlapping region PD. It has a shape projecting upward relative to the region. When the above-described heat treatment step (step S23) is performed on the photosensitive organic material M having such a shape, the portion protruding upward is flattened by heat dripping. This makes it possible to prevent display defects of the display device 2 from occurring.
 EL層形成工程では、下層側から順に、正孔輸送層、発光層、電子輸送層を積層することで構成される。上述したように、発光層は、蒸着法あるいはインクジェット法によって、サブピクセルごとに島状に形成される。より詳細には、発光層は、アノードカバー膜形成工程において形成された突出部23dにマスクを当接させた状態で蒸着法あるいはインクジェット法によって形成される。これにより、上記マスクがアノードカバー膜23に当接することを防ぐことができるので、アノードカバー膜23が剥離することを防ぐことができるようになっている。 In the EL layer forming step, the hole transport layer, the light emitting layer, and the electron transport layer are laminated in order from the lower layer side. As described above, the light emitting layer is formed in an island shape for each sub-pixel by a vapor deposition method or an inkjet method. More specifically, the light emitting layer is formed by the vapor deposition method or the ink jet method in a state where the mask is in contact with the protrusion 23 d formed in the anode cover film forming step. As a result, the mask can be prevented from coming into contact with the anode cover film 23, and thus the anode cover film 23 can be prevented from peeling off.
 カソード形成工程は、スパッタリングを用いてカソード25を形成する工程である。 The cathode forming step is a step of forming the cathode 25 using sputtering.
 図14は、本実施形態における表示デバイス2を製造する表示デバイス製造装置70(製造装置)の構成を示すブロック図である。表示デバイス製造装置70は、図14に示すように、バリア層形成装置72と、TFT層形成装置73と、発光素子層形成装置74と、封止層形成装置76と、これらの装置を制御するコントローラ71とを含む。発光素子層形成装置74は、アノードカバー膜形成装置(カバー膜形成装置)75を含む。バリア層形成装置72は、図1におけるステップS2を行う。TFT層形成装置73は、図1におけるステップS3を行う。発光素子層形成装置74は、図1におけるステップS4(すなわち、図3におけるステップS11~S14)を行う。アノードカバー膜形成装置75は、図3におけるステップS12(すなわち、図4におけるS21~S23)を行う。封止層形成装置76は、図1におけるステップS5を行う。 FIG. 14 is a block diagram showing a configuration of a display device manufacturing apparatus 70 (manufacturing apparatus) for manufacturing the display device 2 in the present embodiment. As shown in FIG. 14, the display device manufacturing apparatus 70 controls the barrier layer forming apparatus 72, the TFT layer forming apparatus 73, the light emitting element layer forming apparatus 74, the sealing layer forming apparatus 76, and these devices. And a controller 71. The light emitting element layer forming device 74 includes an anode cover film forming device (cover film forming device) 75. The barrier layer forming device 72 performs step S2 in FIG. The TFT layer forming device 73 performs step S3 in FIG. The light emitting element layer forming device 74 performs step S4 in FIG. 1 (ie, steps S11 to S14 in FIG. 3). The anode cover film forming apparatus 75 performs step S12 in FIG. 3 (ie, S21 to S23 in FIG. 4). The sealing layer forming device 76 performs step S5 in FIG.
 以上のように、本実施形態では、隣接する領域に対する露光処理において、それぞれグレートーンマスク40の半光透過部42を用いて重畳領域PDに対する露光処理を行う場合には、重畳領域PDに他の領域の帯状パターン42Aよりも幅が広い帯状パターン42Cを配する。これにより、現像処理後の重畳領域PDの感光性有機材料Mが上方向に突出した形状とすることができる(ただし、遮光部43に対応する領域の感光性有機材料Mの高さよりは低い形状となる)。その結果、感光性有機材料Mに対して熱処理を行った場合、重畳領域PDの凸部が熱だれによって平坦化される。これにより、表示デバイス2の表示不良が発生しないようにすることができる。 As described above, in the present embodiment, in the case of performing the exposure process on the overlapping area PD using the half light transmitting portion 42 of the gray tone mask 40 in the exposure process on the adjacent area, another process is performed on the overlapping area PD. A band-shaped pattern 42C wider than the band-shaped pattern 42A in the area is disposed. Thereby, the photosensitive organic material M in the overlapping region PD after development processing can be shaped so as to protrude upward (however, the shape is lower than the height of the photosensitive organic material M in the region corresponding to the light shielding portion 43). ). As a result, when the heat treatment is performed on the photosensitive organic material M, the convex portions of the overlapping region PD are flattened by the heat transfer. This makes it possible to prevent display defects of the display device 2 from occurring.
 〔実施形態2〕
 本発明の他の実施形態について説明する。なお、説明の便宜上、前記実施形態にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を省略する。
Second Embodiment
Another embodiment of the present invention will be described. In addition, about the member which has the same function as the member demonstrated in the said embodiment for convenience of explanation, the same code | symbol is appended and the description is abbreviate | omitted.
 本実施形態では、実施形態1におけるグレートーンマスク40に代えて、後述するグレートーンマスク40Aを用いる点が実施形態1と異なっている。 The present embodiment is different from the first embodiment in that a gray tone mask 40A described later is used in place of the gray tone mask 40 in the first embodiment.
 図15の(a)は、本実施形態におけるグレートーンマスク40Aの後側の端部の構造を示す拡大図であり、(b)は、グレートーンマスク40Aの前側の端部の構造を示す拡大図である。図15の(a)および(b)に示すように、グレートーンマスク40Aは、
前後方向の端部付近において、半光透過部42のスリット42B同士の間の間隔が他の領域のスリット42Bの間隔よりも大きくなっている。換言すれば、当該箇所において、他の領域の帯状パターン42Aよりも幅が広い帯状パターン42Dが形成されている。より詳細には、端部付近における半光透過部42の光の透過量(光透過量)が、他の領域における半光透過部42の光の透過量の50%以下となるように、端部付近におけるスリット42B同士の間隔が設定されている。以降の領域では、半光透過部42のうち帯状パターン42Dが形成されている領域を領域D11(第2部)と呼称する。
FIG. 15A is an enlarged view showing the structure of the rear end of the gray tone mask 40A in the present embodiment, and FIG. 15B is an enlarged view showing the structure of the front end of the gray tone mask 40A. FIG. As shown in (a) and (b) of FIG.
In the vicinity of the end in the front-rear direction, the distance between the slits 42B of the semi-light transmitting portion 42 is larger than the distance between the slits 42B in the other region. In other words, a strip-shaped pattern 42D which is wider than the strip-shaped patterns 42A in the other regions is formed at the corresponding portion. More specifically, the end of the light is transmitted so that the amount of light transmission (light transmission) of the half light transmitting portion 42 in the vicinity of the end is 50% or less of the light transmission of the half light transmitting portion 42 in the other region. An interval between the slits 42B in the vicinity of the portion is set. In the subsequent area, the area of the semi-transmissive portion 42 where the strip pattern 42D is formed is referred to as an area D11 (second portion).
 本実施形態では、グレートーンマスク40Aの半光透過部42を用いて重畳領域PDに対して露光処理を行う場合には、重畳領域PDに対して領域D11を配して第1露光処理および第2露光処理を行う。これにより、第1露光処理および第2露光処理において、重畳領域PDに位置する感光性有機材料Mに対する光の照射量を、半光透過部42を用いた1回の露光処理における光の照射量以下にすることができる。これにより、図10の(b)に示すように、現像処理後の感光性有機材料Mは、当該重畳領域PDに対応する領域が半光透過部42を用いた1回の露光処理を行った領域に比べて上に突出した形状となる。このような形状の感光性有機材料Mに対して上記熱処理工程(ステップS23)を行った場合、上に突出した部分が熱だれによって平坦化される。これにより、表示デバイス2の表示不良が発生しないようにすることができる。 In the present embodiment, in the case where exposure processing is performed on the overlapping region PD using the half light transmitting portion 42 of the gray tone mask 40A, the region D11 is arranged on the overlapping region PD to perform the first exposure processing and the 2 Perform exposure processing. Thereby, in the first exposure processing and the second exposure processing, the irradiation amount of light to the photosensitive organic material M located in the overlapping region PD is set to the irradiation amount of light in one exposure processing using the half light transmitting portion 42 It can be Thereby, as shown in (b) of FIG. 10, the photosensitive organic material M after the development processing was subjected to one exposure processing using the semi-light transmitting portion 42 in the region corresponding to the overlapping region PD. It has a shape projecting upward relative to the region. When the above-described heat treatment step (step S23) is performed on the photosensitive organic material M having such a shape, the portion protruding upward is flattened by heat dripping. This makes it possible to prevent display defects of the display device 2 from occurring.
 〔実施形態3〕
 本発明の他の実施形態について説明する。なお、説明の便宜上、前記実施形態にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を省略する。
Third Embodiment
Another embodiment of the present invention will be described. In addition, about the member which has the same function as the member demonstrated in the said embodiment for convenience of explanation, the same code | symbol is appended and the description is abbreviate | omitted.
 本実施形態では、実施形態1におけるグレートーンマスク40に代えて、後述するグレートーンマスク40Bを用いる点が実施形態1と異なっている。 The present embodiment is different from the first embodiment in that a gray tone mask 40B described later is used instead of the gray tone mask 40 in the first embodiment.
 図16の(a)は、本実施形態におけるグレートーンマスク40Bの右側の端部の構造を示す拡大図であり、(b)は、グレートーンマスク40Bの左側の端部の構造を示す拡大図である。図16の(a)および(b)に示すように、グレートーンマスク40Bは、
左右方向の端部付近において、前後方向に延びるスリット42Eが形成されており、スリット42E同士の間の間隔が他の領域のスリットの間隔よりも大きくなっている。換言すれば、当該箇所において、他の領域の帯状パターン42Aよりも幅が広い帯状パターン42F、帯状パターン42Dが形成されている。より詳細には、左右方向の端部付近における半光透過部42の光の透過量(光透過量)が、他の領域における半光透過部42の光の透過量の50%以下となるように、端部付近におけるスリット42E同士の間隔が設定されている。
FIG. 16A is an enlarged view showing the structure of the right end of the gray tone mask 40B in the present embodiment, and FIG. 16B is an enlarged view showing the structure of the left end of the gray tone mask 40B. It is. As shown in (a) and (b) of FIG.
Near the end in the left-right direction, slits 42E extending in the front-rear direction are formed, and the distance between the slits 42E is larger than the distance between the slits in other regions. In other words, a strip-shaped pattern 42F and a strip-shaped pattern 42D, which are wider than the strip-shaped patterns 42A in the other regions, are formed at the locations. More specifically, the light transmission amount (light transmission amount) of the semi-light transmission portion 42 in the vicinity of the end in the left-right direction is 50% or less of the light transmission amount of the semi-light transmission portion 42 in the other region The distance between the slits 42E in the vicinity of the end is set.
 本実施形態では、グレートーンマスク40Bの半光透過部42を用いて重畳領域PDに対して露光処理を行う場合には、重畳領域PDに対して、スリット42E、帯状パターン42F、および帯状パターン42Dの一部を配して第1露光処理および第2露光処理を行う。これにより、第1露光処理および第2露光処理において、重畳領域PDに位置する感光性有機材料Mに対する光の照射量を、半光透過部42を用いた1回の露光処理における光の照射量以下にすることができる。これにより、図10の(b)に示すように、現像処理後の感光性有機材料Mは、当該重畳領域PDに対応する領域が半光透過部42を用いた1回の露光処理を行った領域に比べて上に突出した形状となる(ただし、遮光部43に対応する領域の感光性有機材料Mの高さよりは低い形状となる)。このような形状の感光性有機材料Mに対して上記熱処理工程(ステップS23)を行った場合、上に突出した部分が熱だれによって平坦化される。これにより、表示デバイス2の表示不良が発生しないようにすることができる。 In the present embodiment, when the overlapping region PD is exposed using the half light transmitting portion 42 of the gray tone mask 40B, the slits 42E, the band-shaped patterns 42F, and the band-shaped patterns 42D with respect to the overlapping region PD. The first exposure process and the second exposure process are performed by arranging a part of Thereby, in the first exposure processing and the second exposure processing, the irradiation amount of light to the photosensitive organic material M located in the overlapping region PD is set to the irradiation amount of light in one exposure processing using the half light transmitting portion 42 It can be Thereby, as shown in (b) of FIG. 10, the photosensitive organic material M after the development processing was subjected to one exposure processing using the semi-light transmitting portion 42 in the region corresponding to the overlapping region PD. It has a shape protruding upward compared to the region (however, the shape is lower than the height of the photosensitive organic material M in the region corresponding to the light shielding portion 43). When the above-described heat treatment step (step S23) is performed on the photosensitive organic material M having such a shape, the portion protruding upward is flattened by heat dripping. This makes it possible to prevent display defects of the display device 2 from occurring.
 〔まとめ〕
 態様1の表示デバイスの製造方法は、下側電極(アノード22)、発光層(EL層24)、および上側電極(カソード25)を含む発光素子と、前記下側電極のエッジを覆う絶縁性のカバー膜(アノードカバー膜23)とを備える表示デバイス2の製造方法であって、前記下側電極に感光性物質(感光性有機材料M)を塗布する工程と、第1フォトマスク(グレートーンマスク40、40A)を用いて第1領域の前記感光性物質を露光する第1露光工程と、第2フォトマスク(グレートーンマスク40、40A)を用いて第2領域の前記感光性物質を露光する第2露光工程と、を含み、前記第1フォトマスクおよび前記第2フォトマスクは、光を遮光する遮光部43と、光を透過させる光透過部41と、前記遮光部と前記光透過部の間の透過率を有する半光透過部42とを有するグレートーンマスクであり、前記第1露光工程において露光する第1領域と、前記第2露光工程において露光する第2領域とは、それぞれ、前記表示デバイスの表示領域の異なる領域に対応し、前記半光透過部は、第1部(帯状パターン42A)と、前記第1部よりも光透過率が小さい第2部(帯状パターン42C、領域D11)とを含み、前記第1領域と前記第2領域とがそれぞれの端部で重なる領域については、前記第1露光工程および前記第2露光工程それぞれにおいて、前記半光透過部の第2部を配する。
[Summary]
A method of manufacturing a display device according to aspect 1 comprises a light emitting element including a lower electrode (anode 22), a light emitting layer (EL layer 24), and an upper electrode (cathode 25), and an insulating material covering an edge of the lower electrode. A method of manufacturing a display device 2 comprising a cover film (anode cover film 23), comprising: applying a photosensitive substance (photosensitive organic material M) to the lower electrode; and a first photomask (grey tone mask) 40, 40A) exposing the photosensitive material in the first region, and exposing the photosensitive material in the second region using the second photomask ( grey tone mask 40, 40A) And a second exposure step, wherein the first photomask and the second photomask are a light shielding portion 43 for shielding light, a light transmitting portion 41 for transmitting light, and the light shielding portion and the light transmitting portion. Transparency between A first region to be exposed in the first exposure step and a second region to be exposed in the second exposure step are each a display of the display device The semi-transmissive portion includes a first portion (strip pattern 42A) and a second portion (strip pattern 42C, region D11) having a light transmittance smaller than that of the first portion. In a region where the first region and the second region overlap at respective end portions, the second portion of the semitransparent portion is disposed in each of the first exposure step and the second exposure step.
 ここで、重畳領域では、第1露光工程および第2露光工程の2回露光処理が行われる。そのため、重畳領域は、重畳領域以外の領域よりも露光処理の影響が大きくなる。 Here, in the overlapping region, the two-time exposure process of the first exposure process and the second exposure process is performed. Therefore, the overlapping region is more influenced by the exposure processing than the region other than the overlapping region.
 上記の構成によれば、半光透過部の第2部を配することにより、現像処理後の感光性物質は、重畳領域に対応する領域が半光透過部を用いた1回の露光処理を行った領域に比べて上に突出した形状となる。このような形状の感光性物質に対して熱処理を行った場合、上に突出した部分が熱だれによって平坦化される。これにより、表示デバイスの表示不良が発生しないようにすることができる。 According to the above configuration, by arranging the second part of the half light transmitting part, the photosensitive material after development processing is subjected to a single exposure process using the half light transmitting part in the region corresponding to the overlapping region. It has a shape that protrudes upward as compared to the region where it has been performed. When a heat treatment is performed on the photosensitive material having such a shape, the protruding portion is flattened by heat dripping. This makes it possible to prevent display defects of the display device.
 態様2では、前記感光性物質は、ポジ型の感光性物質である。 In a second aspect, the photosensitive material is a positive photosensitive material.
 態様3では、前記半光透過部は複数の微細スリットを含み、前記第2部は、前記第1部よりも、隣り合う微細スリット間の距離が小さい。 In the third aspect, the half light transmitting portion includes a plurality of fine slits, and the second portion has a smaller distance between adjacent fine slits than the first portion.
 態様4では、前記半光透過部は、前記複数の微細スリットの間に遮光部からなる帯状パターンが形成されており、前記第2部は、前記第1部よりも、前記帯状パターンの幅が広い。 In the fourth aspect, the semi-light transmitting portion is formed with a strip-shaped pattern formed of a light shielding portion between the plurality of fine slits, and the second portion has a width of the strip-shaped pattern more than the first portion. wide.
 態様5では、前記第1フォトマスクおよび前記第2フォトマスクは、長方形状になっており、前記第1フォトマスクおよび前記第2フォトマスクの端部では、前記帯状パターンが前記第1フォトマスクおよび前記第2フォトマスクの端部の辺に平行に形成されている。 In the fifth aspect, the first photomask and the second photomask have a rectangular shape, and at the end portions of the first photomask and the second photomask, the belt-like pattern is the first photomask and It is formed in parallel with the side of the end of the second photomask.
 態様6では、前記重畳領域では、前記第1露光工程および前記第2露光工程それぞれにおいて、前記帯状パターンを配する。 In the sixth aspect, in the overlapping area, the band-like pattern is disposed in each of the first exposure process and the second exposure process.
 態様7では、前記重畳領域では、前記第1露光工程および前記第2露光工程のいずれかにおいて、前記遮光部を配する。 In the seventh aspect, in the overlapping region, the light shielding portion is disposed in any one of the first exposure process and the second exposure process.
 態様8では、前記第1フォトマスクおよび前記第2フォトマスクは、前記第1フォトマスクおよび前記第2フォトマスクの内部の帯状パターンが延びる方向を第1方向としたときに、前記第1方向と垂直な辺の端部で前記帯状パターンが延びる方向が90°回転して前記第1フォトマスクおよび前記第2フォトマスクの辺と平行になるように形成され、該帯状パターンの幅は前記第1フォトマスクおよび前記第2フォトマスク内部の帯状パターンの幅よりも大きい。 In an eighth aspect, when the first photomask and the second photomask have a first direction, in which the strip-shaped patterns in the first photomask and the second photomask extend, the first photomask and the second photomask are The direction in which the strip pattern extends at the end of the vertical side is formed so as to be parallel to the sides of the first photomask and the second photomask by rotating 90 ° in the extending direction, and the width of the strip pattern is the first It is larger than the width of the strip pattern inside the photomask and the second photomask.
 態様9では、前記第2部における光透過率は、前記第1部の光透過量の50%以下である。 In a ninth aspect, the light transmittance in the second part is 50% or less of the light transmission amount of the first part.
 態様10では、前記重畳領域は、長方形状であり、前記微細スリットは、前記重畳領域の長手方向に平行に形成されている。 In the tenth aspect, the overlapping region is in a rectangular shape, and the fine slits are formed in parallel with the longitudinal direction of the overlapping region.
 態様11では、前記第1露光工程および前記第2露光工程の後に、パターニングされた前記感光性物質を熱処理する熱処理工程を含み、前記熱処理工程によって、前記重畳領域以外の領域において、前記第1フォトマスクまたは前記第2フォトマスクの前記光透過部に対応する領域には、前記表示デバイスの発光層が形成される開口部が形成され、前記第1フォトマスクまたは前記第2フォトマスクの前記遮光部に対応する領域には、前記カバー膜に対して上側に突出する突出部が形成される。 In an eleventh aspect, the method further includes a heat treatment step of heat treating the patterned photosensitive material after the first exposure step and the second exposure step, and the first heat treatment step is performed in the region other than the overlapping region. An opening in which a light emitting layer of the display device is formed is formed in a region corresponding to the light transmitting portion of the mask or the second photomask, and the light shielding portion of the first photomask or the second photomask is formed. In the region corresponding to a, a protrusion protruding upward with respect to the cover film is formed.
 態様10の表示デバイスの製造装置(75)は、下側電極、発光層、および上側電極を含む発光素子と、前記下側電極のエッジを覆う絶縁性のカバー膜とを備える表示デバイスの製造装置であって、前記カバー膜を形成するカバー膜形成装置を含み、前記カバー膜形成装置は、前記下側電極に感光性物質を塗布する工程と、第1フォトマスクを用いて第1領域の前記感光性物質を露光する第1露光工程と、第2フォトマスクを用いて第2領域の前記感光性物質を露光する第2露光工程と、を含み、前記第1フォトマスクおよび前記第2フォトマスクは、光を遮光する遮光部と、光を透過させる光透過部と、前記遮光部と前記光透過部の間の透過率を有する半光透過部とを有するグレートーンマスクであり、前記第1露光工程において露光する第1領域と、前記第2露光工程において露光する第2領域とは、それぞれ、前記表示デバイスの表示領域の異なる領域に対応し、前記半光透過部は、第1部と、前記第1部よりも光透過率が小さい第2部とを含み、前記第1領域と前記第2領域とがそれぞれの端部で重なる領域については、前記第1露光工程および前記第2露光工程それぞれにおいて、前記半光透過部の第2部を配する。 A display device manufacturing apparatus (75) according to aspect 10 includes a light emitting element including a lower electrode, a light emitting layer, and an upper electrode, and an insulating cover film covering an edge of the lower electrode. A cover film forming apparatus for forming the cover film, wherein the cover film forming apparatus includes the steps of: applying a photosensitive material to the lower electrode; and using the first photomask to form the cover film. A first exposure process for exposing a photosensitive material; and a second exposure process for exposing the photosensitive material in a second region using a second photomask, the first photomask and the second photomask A gray tone mask having a light shielding portion for shielding light, a light transmitting portion for transmitting light, and a half light transmitting portion having a transmittance between the light shielding portion and the light transmitting portion; Exposure in the exposure process The first area and the second area to be exposed in the second exposure step correspond to different areas of the display area of the display device, and the semi-transmissive portion includes a first portion and the first portion. The region including the second portion having a light transmittance smaller than that of the second region and the first region and the second region overlap at each end portion is the region in the first exposure step and the second exposure step. The second part of the half light transmitting part is disposed.
 2 表示デバイス
 5 発光素子層(発光素子)
 22 アノード(下側電極)
 23 アノードカバー膜(カバー膜)
 24 EL層(発光層)
 25 カソード(上側電極)
 M 感光性有機材料(感光性物質)
 40、40A グレートーンマスク(第1フォトマスク、第2フォトマスク)
 41 光透過部
 42 半光透過部
 42A 帯状パターン(第1部)
 42B スリット(微細スリット)
 42C 帯状パターン(第2部)
 43 遮光部
 70 表示デバイス製造装置(製造装置)
 75 アノードカバー膜形成装置(カバー膜形成装置)
 D11 領域(第2部)
 PD 重畳領域
2 Display Device 5 Light Emitting Element Layer (Light Emitting Element)
22 anode (lower electrode)
23 Anode cover membrane (cover membrane)
24 EL layer (emitting layer)
25 cathode (upper electrode)
M Photosensitive organic material (photosensitive substance)
40, 40A gray tone mask (first photomask, second photomask)
41 light transmitting portion 42 half light transmitting portion 42A strip-like pattern (part 1)
42B slit (fine slit)
42C Strip Pattern (Part 2)
43 Light Shield 70 Display Device Manufacturing Device (Manufacturing Device)
75 Anode cover film forming device (cover film forming device)
D11 area (Part 2)
PD overlapping area

Claims (12)

  1.  下側電極、発光層、および上側電極を含む発光素子と、前記下側電極のエッジを覆う絶縁性のカバー膜とを備える表示デバイスの製造方法であって、
     前記下側電極に感光性物質を塗布する工程と、
     第1フォトマスクを用いて第1領域の前記感光性物質を露光する第1露光工程と、
     第2フォトマスクを用いて第2領域の前記感光性物質を露光する第2露光工程と、を含み、
     前記第1フォトマスクおよび前記第2フォトマスクは、光を遮光する遮光部と、光を透過させる光透過部と、前記遮光部と前記光透過部の間の光透過率を有する半光透過部とを有するグレートーンマスクであり、
     前記第1露光工程において露光する第1領域と、前記第2露光工程において露光する第2領域とは、それぞれ、前記表示デバイスの表示領域の異なる領域に対応し、
     前記半光透過部は、第1部と、前記第1部よりも光透過率が小さい第2部とを含み、
     前記第1領域と前記第2領域とがそれぞれの端部で重なる重畳領域については、前記第1露光工程および前記第2露光工程それぞれにおいて、前記半光透過部の第2部を配することを特徴とする表示デバイスの製造方法。
    A method of manufacturing a display device, comprising: a light emitting element including a lower electrode, a light emitting layer, and an upper electrode; and an insulating cover film covering an edge of the lower electrode,
    Applying a photosensitive substance to the lower electrode;
    A first exposure step of exposing the photosensitive material in a first area using a first photomask;
    Exposing the photosensitive material in a second area using a second photomask;
    The first photomask and the second photomask are a half light transmitting portion having a light shielding portion for shielding light, a light transmitting portion for transmitting light, and a light transmittance between the light shielding portion and the light transmitting portion. A gray tone mask with
    The first area to be exposed in the first exposure step and the second area to be exposed in the second exposure step correspond to different areas of the display area of the display device, respectively.
    The half light transmitting portion includes a first portion and a second portion having a light transmittance smaller than that of the first portion,
    In the overlapping region where the first region and the second region overlap at each end, the second portion of the semitransparent portion is disposed in each of the first exposure step and the second exposure step. A method of manufacturing a display device characterized by the above.
  2.  前記感光性物質は、ポジ型の感光性物質であることを特徴とする請求項1に記載の表示デバイスの製造方法。 The method according to claim 1, wherein the photosensitive material is a positive photosensitive material.
  3.  前記半光透過部は複数の微細スリットを含み、
     前記第2部は、前記第1部よりも、隣り合う微細スリット間の距離が小さいことを特徴とする請求項1又は2に記載の表示デバイスの製造方法。
    The semi-transmissive portion includes a plurality of fine slits,
    The method according to claim 1, wherein the second part has a smaller distance between adjacent fine slits than the first part.
  4.  前記半光透過部は、前記複数の微細スリットの間に遮光部からなる帯状パターンが形成されており、
     前記第2部は、前記第1部よりも、前記帯状パターンの幅が広いことを特徴とする請求項1~3のいずれか1項に記載の表示デバイスの製造方法。
    In the semi-light transmitting portion, a band-like pattern including a light shielding portion is formed between the plurality of fine slits,
    The method of manufacturing a display device according to any one of claims 1 to 3, wherein the width of the strip-shaped pattern is wider than that of the first part.
  5.  前記第1フォトマスクおよび前記第2フォトマスクは、長方形状になっており、前記第1フォトマスクおよび前記第2フォトマスクの端部では、前記帯状パターンが前記第1フォトマスクおよび前記第2フォトマスクの端部の辺に平行に形成されていることを特徴とする請求項4に記載の表示デバイスの製造方法。 The first photomask and the second photomask have a rectangular shape, and at the end portions of the first photomask and the second photomask, the belt-like patterns are the first photomask and the second photo. The method of manufacturing a display device according to claim 4, wherein the method is formed in parallel with the side of the end of the mask.
  6.  前記重畳領域では、前記第1露光工程および前記第2露光工程それぞれにおいて、前記帯状パターンを配することを特徴とする請求項4または5に記載の表示デバイスの製造方法。 The method for manufacturing a display device according to claim 4, wherein in the overlapping area, the band-like pattern is disposed in each of the first exposure process and the second exposure process.
  7.  前記重畳領域では、前記第1露光工程および前記第2露光工程のいずれかにおいて、前記遮光部を配することを特徴とする請求項1~5のいずれか1項に記載の表示デバイスの製造方法。 The method for manufacturing a display device according to any one of claims 1 to 5, wherein the light shielding portion is disposed in any of the first exposure step and the second exposure step in the overlapping region. .
  8.  前記第1フォトマスクおよび前記第2フォトマスクは、前記第1フォトマスクおよび前記第2フォトマスクの内部の帯状パターンが延びる方向を第1方向としたときに、前記第1方向と垂直な辺の端部で前記帯状パターンが延びる方向が90°回転して前記第1フォトマスクおよび前記第2フォトマスクの辺と平行になるように形成され、該帯状パターンの幅は前記第1フォトマスクおよび前記第2フォトマスク内部の帯状パターンの幅よりも大きいことを特徴とする請求項4~6のいずれか1項に記載の表示デバイスの製造方法。 The first photomask and the second photomask have a side perpendicular to the first direction, when a direction in which the strip-shaped patterns in the first photomask and the second photomask extend is a first direction. The strip pattern is formed so that the direction in which the strip pattern extends in the end portion is rotated by 90 ° and becomes parallel to the sides of the first photomask and the second photomask, and the width of the strip pattern is the first photomask and the The method for manufacturing a display device according to any one of claims 4 to 6, characterized in that the width is larger than the width of the strip pattern inside the second photomask.
  9.  前記第2部における光透過率は、前記第1部の光透過量の50%以下であることを特徴とする請求項2~8のいずれか1項に記載の表示デバイスの製造方法。 The method of manufacturing a display device according to any one of claims 2 to 8, wherein the light transmittance in the second part is 50% or less of the light transmission amount of the first part.
  10.  前記重畳領域は、長方形状であり、
     前記微細スリットは、前記重畳領域の長手方向に平行に形成されていることを特徴とする請求項3に記載の表示デバイスの製造方法。
    The overlapping area is rectangular,
    The method according to claim 3, wherein the fine slits are formed in parallel with a longitudinal direction of the overlapping region.
  11.  前記第1露光工程および前記第2露光工程の後に、
     パターニングされた前記感光性物質を熱処理する熱処理工程を含み、
     前記熱処理工程によって、前記重畳領域以外の領域において、
      前記第1フォトマスクまたは前記第2フォトマスクの前記光透過部に対応する領域には、前記表示デバイスの発光層が形成される開口部が形成され、
      前記第1フォトマスクまたは前記第2フォトマスクの前記遮光部に対応する領域には、前記カバー膜に対して上側に突出する突出部が形成されることを特徴とする請求項1~9のいずれか1項に記載の表示デバイスの製造方法。
    After the first exposure step and the second exposure step,
    Including a heat treatment step of heat treating the patterned photosensitive material;
    In the region other than the overlapping region by the heat treatment step,
    An opening in which a light emitting layer of the display device is formed is formed in a region corresponding to the light transmitting portion of the first photomask or the second photomask.
    The projection part which protrudes upwards with respect to the said cover film is formed in the area | region corresponding to the said light-shielding part of a said 1st photomask or a said 2nd photomask, It is characterized by the above-mentioned. The manufacturing method of the display device of any one of-.
  12.  下側電極、発光層、および上側電極を含む発光素子と、前記下側電極のエッジを覆う絶縁性のカバー膜とを備える表示デバイスの製造装置であって、
     前記カバー膜を形成するカバー膜形成装置を含み、
     前記カバー膜形成装置は、
      前記下側電極に感光性物質を塗布する工程と、
      第1フォトマスクを用いて第1領域の前記感光性物質を露光する第1露光工程と、
      第2フォトマスクを用いて第2領域の前記感光性物質を露光する第2露光工程と、を含み、
     前記第1フォトマスクおよび前記第2フォトマスクは、光を遮光する遮光部と、光を透過させる光透過部と、前記遮光部と前記光透過部の間の光透過率を有する半光透過部とを有するグレートーンマスクであり、
     前記第1露光工程において露光する第1領域と、前記第2露光工程において露光する第2領域とは、それぞれ、前記表示デバイスの表示領域の異なる領域に対応し、
     前記半光透過部は、第1部と、前記第1部よりも光透過率が小さい第2部とを含み、
     前記第1領域と前記第2領域とがそれぞれの端部で重なる重畳領域については、前記第1露光工程および前記第2露光工程それぞれにおいて、前記半光透過部の第2部を配することを特徴とする表示デバイスの製造装置。
    A display device manufacturing apparatus comprising: a light emitting element including a lower electrode, a light emitting layer, and an upper electrode; and an insulating cover film covering an edge of the lower electrode,
    A cover film forming apparatus for forming the cover film,
    The cover film forming apparatus is
    Applying a photosensitive substance to the lower electrode;
    A first exposure step of exposing the photosensitive material in a first area using a first photomask;
    Exposing the photosensitive material in a second area using a second photomask;
    The first photomask and the second photomask are a half light transmitting portion having a light shielding portion for shielding light, a light transmitting portion for transmitting light, and a light transmittance between the light shielding portion and the light transmitting portion. A gray tone mask with
    The first area to be exposed in the first exposure step and the second area to be exposed in the second exposure step correspond to different areas of the display area of the display device, respectively.
    The half light transmitting portion includes a first portion and a second portion having a light transmittance smaller than that of the first portion,
    In the overlapping region where the first region and the second region overlap at each end, the second portion of the semitransparent portion is disposed in each of the first exposure step and the second exposure step. The manufacturing apparatus of the display device characterized by the above.
PCT/JP2017/046227 2017-12-22 2017-12-22 Method for manufacturing display device, and apparatus for manufacturing display device WO2019123655A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208484A (en) * 2001-01-12 2002-07-26 Tohoku Pioneer Corp Organic el display, and manufacturing method of the same
WO2008108032A1 (en) * 2007-03-05 2008-09-12 Sharp Kabushiki Kaisha Liquid crystal display device and its manufacturing method
JP2010118162A (en) * 2008-11-11 2010-05-27 Seiko Epson Corp Organic electroluminescent device, and manufacturing method of organic electroluminescent device
WO2013031461A1 (en) * 2011-08-29 2013-03-07 シャープ株式会社 Method for manufacturing liquid-crystal display device
JP2013054893A (en) * 2011-09-02 2013-03-21 Panasonic Corp Manufacturing method of display panel
WO2013088479A1 (en) * 2011-12-15 2013-06-20 パナソニック株式会社 Device manufacturing method, and organic el device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208484A (en) * 2001-01-12 2002-07-26 Tohoku Pioneer Corp Organic el display, and manufacturing method of the same
WO2008108032A1 (en) * 2007-03-05 2008-09-12 Sharp Kabushiki Kaisha Liquid crystal display device and its manufacturing method
JP2010118162A (en) * 2008-11-11 2010-05-27 Seiko Epson Corp Organic electroluminescent device, and manufacturing method of organic electroluminescent device
WO2013031461A1 (en) * 2011-08-29 2013-03-07 シャープ株式会社 Method for manufacturing liquid-crystal display device
JP2013054893A (en) * 2011-09-02 2013-03-21 Panasonic Corp Manufacturing method of display panel
WO2013088479A1 (en) * 2011-12-15 2013-06-20 パナソニック株式会社 Device manufacturing method, and organic el device

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