JP2021093322A - Manufacturing method of display device - Google Patents

Abstract

To provide a manufacturing method of a display device that can prevent deterioration of encapsulation performance of an encapsulation layer to suppress degradation of an organic EL element even when turning-up is generated in an end of an organic encapsulation film.SOLUTION: In a manufacturing method of a display device, an organic sealing film forming step S32 comprises: a coating step S321 in which an organic material that forms an organic sealing film 26 at an inside of a bank 45 is coated; a curing step S322 in which the coated organic material is cured; and a partial removal step S323 that removes an overlapping position of the organic material overlapped on the bank 45.SELECTED DRAWING: Figure 8

Description

The present invention relates to a method for manufacturing a display device.

In recent years, as a display device that replaces a liquid crystal display device, for example, a self-luminous organic EL display device that uses an organic EL (electroluminescence) element has attracted attention. Here, in a general organic EL display device, a sealing layer is provided so as to cover the organic EL element in order to suppress deterioration of the organic EL element due to mixing of water, oxygen, or the like.

For example, Patent Document 1 discloses a method for manufacturing a display device, which forms a sealing layer in which an inorganic sealing film and an organic sealing film are alternately laminated.

Japanese Unexamined Patent Publication No. 2012-2503036

By the way, in the conventional manufacturing method of the display device as described above, the frame-shaped first bank and the second bank surrounding the pixel area (display area) are sequentially provided, and the first and second banks are organically sealed. The organic sealing film was formed by applying an organic material constituting the waterproof film by an inkjet method or the like, and further irradiating with light to cure the organic material. After that, in this conventional method for manufacturing a display device, an inorganic sealing film (second inorganic sealing film) is formed on the organic sealing film by a CVD method or the like.

However, in the conventional manufacturing method of the display device as described above, when the end portion of the organic sealing film is curled, the inorganic sealing film on the organic sealing film cannot be properly formed. In addition, the sealing performance of the sealing layer may be significantly deteriorated. Specifically, in the conventional manufacturing method of the display device, the organic material may run on the top of the first bank, and when the organic sealing film is formed, the end portion thereof is in the first bank. Curling may occur on the top. As a result, in this conventional method for manufacturing a display device, the inorganic sealing film may not be properly formed at the end of the organic sealing film, and the moisture or moisture or the like may be increased depending on the deterioration of the sealing performance of the sealing layer. There is a possibility that oxygen or the like may enter and the deterioration of the organic EL element cannot be suppressed.

In view of the above problems, the present invention is a display device capable of preventing deterioration of the sealing performance of the sealing layer and suppressing deterioration of the organic EL element even when the end portion of the organic sealing film is curled. It is an object of the present invention to provide the manufacturing method of.

In order to achieve the above object, the method for manufacturing a display device according to the present invention includes a display region, a frame region surrounding the display region, a thin film transistor layer, and a first electrode, a light emitting layer, and a second electrode, respectively. A method for manufacturing a display device including a light emitting element layer on which a plurality of light emitting elements having different emission colors are formed.
In the sealing layer forming step of forming a sealing layer having a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film so as to cover the plurality of light emitting elements, and in the frame region, the said A bank forming step of forming a frame-shaped bank that surrounds the display area and defines the end portion of the organic sealing film is included.
The sealing layer forming step is a first inorganic sealing film forming step of forming the first inorganic sealing film on the plurality of light emitting elements, and forming the organic sealing film on the first inorganic sealing film. The organic sealing film forming step and the second inorganic sealing film forming step of forming the second inorganic sealing film on the organic sealing film are included.
The organic sealing film forming step includes a coating step of applying an organic material forming the organic sealing film inside the bank, a curing step of curing the applied organic material, and an organic substance superimposed on the bank. It includes a partial removal step of removing overlapping portions of the material.

In the manufacturing method of the display device configured as described above, the organic sealing film forming step is a coating step of applying an organic material forming an organic sealing film inside a bank and a curing step of curing the applied organic material. And a partial removal step of removing the superimposed portion of the organic material superimposed on the bank. As a result, unlike the above-mentioned conventional example, even when the end portion of the organic sealing film is curled, the curl can be removed as the superposed portion. As a result, unlike the above-mentioned conventional example, it is possible to prevent deterioration of the sealing performance of the sealing layer and suppress deterioration of the organic EL element.

Further, in the manufacturing method of the display device, after the curing step, a determination step of determining whether or not the overlapping portion of the organic material is present is performed, and in the determination step, the overlapping portion of the organic material is present. When it is determined, it is preferable to carry out the partial removal step, and when it is determined that the overlapping portion of the organic material does not exist, it is preferable to omit the execution of the partial removal step.

In this case, since the partial removal step is performed only when it is determined that the superposed portion exists, the manufacturing method of the display device can be simplified.

Further, in the method for manufacturing the display device, it is preferable that the image pickup result by the image pickup unit is used in the determination step.

In this case, the presence or absence of the overlapping portion can be easily and accurately determined.

Further, in the method for manufacturing the display device, after the partial removal step, a foreign matter determination step for determining whether or not a foreign matter is present on the bank is performed, and in the foreign matter determination step, it is determined that the foreign matter is present. If so, it is preferable to perform a foreign matter removing step of removing the foreign matter.

In this case, when it is determined that the foreign matter is present on the bank, the foreign matter is removed, so that it is possible to reliably prevent the sealing performance of the sealing layer from being deteriorated by the foreign matter.

Further, in the method for manufacturing the display device, it is preferable that the foreign matter is removed by polishing the foreign matter in the foreign matter removing step.

In this case, foreign matter can be reliably removed.

Further, in the method for manufacturing the display device, it is preferable that the image pickup result by the imaging unit is used in the foreign matter discrimination step.

In this case, the presence or absence of the foreign matter can be easily and accurately determined.

Further, in the method for manufacturing the display device, the partial removal step is preferably an ashing process using a predetermined processing gas.

In this case, the overlapping portion can be easily and surely removed.

Further, in the method of manufacturing the display device, in the bank forming step, the bank is formed so that the area surrounded by the bank becomes rectangular.
The partial removal step includes a first ashing process in which the ashing process is performed with the first mask installed so that one of the opposite side portions facing each other in the area is exposed, and a mutual ashing process in the area. It is preferable to include a second ashing process in which the ashing process is performed with the second mask installed so that the other opposite side portions facing each other are exposed.

In this case, an appropriate ashing process can be performed, and the partial removal step can be performed with high accuracy.

According to the present invention, there is a method for manufacturing a display device capable of preventing deterioration of the sealing performance of the sealing layer and suppressing deterioration of the organic EL element even when the end portion of the organic sealing film is curled. It will be possible to provide.

FIG. 1 is a plan view showing a main configuration of a display device according to the first embodiment of the present invention. FIG. 2 is a diagram illustrating a schematic internal configuration of a display area in the display device shown in FIG. FIG. 3 is a cross-sectional view showing a configuration of a main part of a display area in the display device shown in FIG. FIG. 4 is an equivalent circuit diagram showing the thin film transistor layer shown in FIG. FIG. 5 is a cross-sectional view showing the organic EL layer shown in FIG. FIG. 6 is a cross-sectional view showing a main configuration of the display device shown in FIG. 1, and is a sectional view taken along line VI-VI of FIG. FIG. 7 is a flowchart showing a manufacturing method of the display device shown in FIG. FIG. 8 is a flowchart showing a detailed step in the sealing layer forming step shown in FIG. 7. FIG. 9 is a diagram illustrating a specific processing method of the ashing process in the partial removal step shown in FIG. 8, and FIGS. 9 (a) and 9 (b) show the first ashing process and the second ashing process, respectively. It is a figure explaining the specific processing method of the ashing process. FIG. 10 is a diagram for explaining the specific effect of the partial removal step, and FIGS. 10A and 10B show the state of the main part configuration before and after the partial removal step, respectively. It is a figure explaining. FIG. 11 is a diagram for explaining the specific effect of the ashing process, and FIGS. 11 (a) and 11 (b) are diagrams for explaining the method and result example of the ashing process in the comparative example, respectively. 11 (c) is a diagram illustrating an example of the result of the ashing process. FIG. 12 is a flowchart showing a manufacturing method of a modified example of the display device shown in FIG. FIG. 13 is a diagram for explaining a determination process for determining whether or not the superimposed portion shown in FIG. 12 exists, and FIGS. 13 (a) and 13 (b) show cases where the superimposed portion exists and that of FIG. 13 (b), respectively. It is a figure explaining the case which the superimposition part does not exist. FIG. 14 is a flowchart showing a method of manufacturing a display device according to a second embodiment of the present invention. FIG. 15 is a diagram illustrating a foreign matter determination step for determining whether or not the foreign matter shown in FIG. 14 is present, and FIGS. 15 (a) and 15 (b) show the case where the foreign matter is present and the foreign matter, respectively. It is a figure explaining the case which does not exist.

Hereinafter, preferred embodiments showing the method for manufacturing the display device of the present invention will be described with reference to the drawings. In the following description, a case where the present invention is applied to an organic EL display device will be described as an example. Further, the dimensions of the constituent members in each drawing do not faithfully represent the actual dimensions of the constituent members, the dimensional ratio of each constituent member, and the like. Further, "same layer" means that it is formed by the same process (deposition process), and "lower layer" means that it is formed by a process prior to the layer to be compared. However, the "upper layer" means that it is formed in a process after the layer to be compared.

<< First Embodiment >>
FIG. 1 is a plan view showing a main configuration of a display device according to a first embodiment of the present invention. FIG. 2 is a diagram illustrating a schematic internal configuration of a display area in the display device shown in FIG. FIG. 3 is a cross-sectional view showing a configuration of a main part of a display area in the display device shown in FIG. FIG. 4 is an equivalent circuit diagram showing the thin film transistor layer shown in FIG. FIG. 5 is a cross-sectional view showing the organic EL layer shown in FIG. FIG. 6 is a cross-sectional view showing a main configuration of the display device shown in FIG. 1, and is a sectional view taken along line VI-VI of FIG.

As shown in FIG. 1, the display device 50a includes, for example, a rectangular display area D for displaying information and a frame area F provided around the display area D. Further, in the frame area F, a terminal portion E is provided at the end of the frame area F, and wiring (not shown) provided in a plurality of light emitting elements described later that define the display area D is provided in the terminal portion. It is connected to E. Further, for example, a flexible printed circuit board (not shown) is connected to the terminal portion E, and a signal, a power supply voltage, and the like are supplied to the pixels via the flexible printed circuit board.

Further, in the display area D, as shown in FIG. 2, a plurality of sub-pixels P are arranged in a matrix. Specifically, in the display area D, a sub-pixel P having a red light emitting region Lr for displaying red, a sub pixel P having a green light emitting region Lg for displaying green, and a blue display. Sub-pixels P having a blue light emitting region Lb for performing the above are provided so as to be adjacent to each other. Here, in the display area D, one pixel is composed of three adjacent sub-pixels P having a red light emitting region Lr, a green light emitting region Lg, and a blue light emitting region Lb.

As shown in FIG. 3, the display device 50a includes a base substrate 10, a thin film transistor (TFT) layer 20a provided on the base substrate 10, and an organic light emitting element provided on the thin film transistor layer 20a. It includes an EL (Electroluminescence) element 30a.

The base substrate 10 is, for example, a plastic substrate made of a polyimide resin.

As shown in FIGS. 2 and 3, the thin film transistor layer 20a includes a base coat film 11, semiconductor layers 14a and 14b, a gate insulating film 13, a first metal layer, a first interlayer insulating film 15, a second metal layer, and a second interlayer. It includes an insulating film 17, a third metal layer, and a flattening film 19. The first metal layer includes a gate wire 12 extending in the row direction, gate electrodes 12a and 12b, and a lower conductive layer. The second metal layer includes a power supply line (not shown) extending in the row direction and an upper conductive layer. The third metal layer includes a source line Sa extending in the row direction, a power supply line Sb extending in the row direction, source electrodes 18a and 18c, and drain electrodes 18b and 18d. The gate line 12 and the source line Sa are examples, and may be provided in another layer.

Specifically, as shown in FIG. 3, the thin film transistor layer 20a includes a base coat film 11 provided on the base substrate 10, a plurality of first thin film transistors 9a provided on the base coat film 11, and a plurality of second thin film transistors. It includes 9b, a plurality of capacitors 9c, each first thin film transistor 9a, each second thin film transistor 9b, and a flattening film 19 provided on each capacitor 9c. Here, in the thin film transistor layer 20a, as shown in FIGS. 2 and 4, a plurality of gate lines 12 are provided so as to extend parallel to each other in the lateral direction in the drawing. Further, in the thin film transistor layer 20a, as shown in FIGS. 2 and 4, a plurality of source lines Sa are provided so as to extend parallel to each other in the vertical direction in the drawing. Further, in the thin film transistor layer 20a, as shown in FIGS. 2 and 4, a plurality of power supply lines Sb are provided adjacent to each source line Sa so as to extend parallel to each other in the vertical direction in the drawing. Further, as shown in FIG. 4, each power supply line Sb is an internal wiring constituting a high power supply voltage line (EL VDD), and conducts between the anode of the organic EL layer described later and the high power supply voltage source (not shown). doing. Further, in the thin film transistor layer 20a, as shown in FIG. 4, each sub-pixel P is provided with a first thin film transistor 9a, a second thin film transistor 9b, and a capacitor 9c, respectively.

The base coat film 11 is composed of, for example, a single-layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.

As shown in FIG. 4, the first thin film transistor 9a is connected to the corresponding gate line 12 and the source line Sa in each sub-pixel P. Further, as shown in FIG. 3, the first thin film transistor 9a includes a gate electrode 12a, a gate insulating film 13, a semiconductor layer 14a, a first interlayer insulating film 15, and a second interlayer insulating film 17 provided in this order on the base coat film 11. , And a source electrode 18a and a drain electrode 18b.

Here, as shown in FIG. 3, the gate electrode 12a is provided in an island shape on the base coat film 11. Further, as shown in FIG. 3, the gate insulating film 13 is provided so as to cover the gate electrode 12a. Further, as shown in FIG. 3, the semiconductor layer 14a is provided on the gate insulating film 13 so as to overlap the gate electrode 12a, and has a channel region overlapping the gate electrode 12a and a source region arranged with the channel region interposed therebetween. And a drain region.

Further, as shown in FIG. 3, the first interlayer insulating film 15 and the second interlayer insulating film 17 are provided in order so as to cover the channel region of the semiconductor layer 14a. Further, as shown in FIG. 3, the source electrode 18a and the drain electrode 18b are provided on the second interlayer insulating film 17 so as to be separated from each other. Further, as shown in FIG. 3, the source electrode 18a and the drain electrode 18b are the sources of the semiconductor layer 14a via the contact holes formed in the laminated film of the first interlayer insulating film 15 and the second interlayer insulating film 17. It is connected to the region and the drain region, respectively.

The gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are made of, for example, a single-layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride. ..

As shown in FIG. 4, the second thin film transistor 9b is connected to the corresponding first thin film transistor 9a and the power supply line Sb in each sub-pixel P. Further, as shown in FIG. 3, the first thin film transistor 9b includes a gate electrode 12b, a gate insulating film 13, a semiconductor layer 14b, a first interlayer insulating film 15, and a second interlayer insulating film 17 which are sequentially provided on the base coat film 11. , And a source electrode 18c and a drain electrode 18d.

Here, as shown in FIG. 3, the gate electrode 12b is provided in an island shape on the base coat film 11. Further, as shown in FIG. 3, the gate insulating film 13 is provided so as to cover the gate electrode 12b. Further, as shown in FIG. 3, the semiconductor layer 14b is provided on the gate insulating film 13 so as to overlap the gate electrode 12b, and has a channel region overlapping the gate electrode 12b and a source region arranged with the channel region interposed therebetween. And a drain region.

Further, as shown in FIG. 3, the first interlayer insulating film 15 and the second interlayer insulating film 17 are provided in order so as to cover the channel region of the semiconductor layer 14b. Further, as shown in FIG. 3, the source electrode 18c and the drain electrode 18d are provided on the second interlayer insulating film 17 so as to be separated from each other. Further, as shown in FIG. 3, the source electrode 18c and the drain electrode 18d are the sources of the semiconductor layer 14b via the contact holes formed in the laminated film of the first interlayer insulating film 15 and the second interlayer insulating film 17. It is connected to the region and the drain region, respectively.

In the present embodiment, the bottom gate type first thin film transistor 9a and the second thin film transistor 9b are illustrated, but the first thin film transistor 9a and the second thin film transistor 9b may be top gate type thin film transistors.

As shown in FIG. 4, the capacitor 9c is connected to the corresponding first thin film transistor 9a and the power supply line Sb in each sub-pixel P. Here, as shown in FIG. 3, the capacitor 9c is a gate insulating film that is in the same layer as the gate electrode 12a and is provided in order so as to cover the lower conductive layer 12c and the lower conductive layer 12c formed of the same material. The 13 and the first interlayer insulating film 15 and the upper conductive layer 16 provided on the first interlayer insulating film 15 so as to overlap the lower conductive layer 12c are provided. The upper conductive layer 16 is also called a capacitive wiring.

The flattening film 19 is made of a colorless and transparent organic resin material such as an acrylic resin, a polyimide resin, or an epoxy resin.

As shown in FIG. 3, the organic EL element 30a includes a plurality of first electrodes 21, an edge cover 22, a plurality of organic EL layers 23, and a second electrode 24, which are sequentially provided on the flattening film 19. ..

As shown in FIG. 3, the plurality of first electrodes 21 are provided in a matrix on the flattening film 19 so as to correspond to the plurality of sub-pixels P. Further, the first electrode 21 is the anode of the organic EL element 30a, and as shown in FIG. 3, is connected to the drain electrode 18d of each second thin film transistor 9b via the contact hole Ca formed in the flattening film 19. Has been done. Further, the first electrode 21 is electrically connected to the power supply line Sb via the second thin film transistor 9b as a driving transistor of the organic EL element 30a (see FIG. 4). Further, the first electrode 21 has a function of injecting holes into the organic EL layer 23. Further, the first electrode 21 is more preferably formed of a material having a large work function in order to improve the hole injection efficiency into the organic EL layer 23.

Specifically, examples of the material constituting the first electrode 21 include silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), and gold. (Au), Titanium (Ti), Ruthenium (Ru), Manganese (Mn), Indium (In), Itterbium (Yb), Lithium Fluoride (LiF), Platinum (Pt), Palladium (Pd), Molybdenum (Mo) , Iridium (Ir), tin (Sn) and other metal materials. Further, the material constituting the first electrode 21 may be, for example, an alloy such as _{astatine (At) / oxidized astatine (AtO 2).} Further, the material constituting the first electrode 21 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). There may be. Further, the first electrode 21 may be formed by laminating a plurality of layers made of the above materials. Examples of the compound material having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).

As shown in FIG. 3, the edge covers 22 are provided in a grid pattern so as to cover the peripheral edges of the first electrodes 21. That is, as illustrated in FIG. 3, the edge cover 22 has an opening 22k that exposes the first electrode 21, and also covers the edge of the first electrode 22. Here, examples of the material constituting the edge cover 22 include organic resin materials such as polyimide resin, acrylic resin, polysiloxane resin, and novolak resin.

As shown in FIG. 3, the plurality of organic EL layers 23 are arranged on each of the first electrodes 21 and are provided in a matrix so as to correspond to the plurality of sub-pixels. Further, as shown in FIG. 5, each organic EL layer 23 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer, which are sequentially provided on the first electrode 21. It has 5.

The hole injection layer 1 is also called an anode buffer layer, and has a function of bringing the energy levels of the first electrode 21 and the organic EL layer 23 closer to each other and improving the hole injection efficiency from the first electrode 21 to the organic EL layer 23. Have.

The hole transport layer 2 has a function of improving the hole transport efficiency from the first electrode 21 to the organic EL layer 23.

In the light emitting layer 3, when a voltage is applied by the first electrode 21 and the second electrode 24, holes and electrons are injected from the first electrode 21 and the second electrode 24, respectively, and the holes and electrons are recombined. The area.

The electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.

The electron injection layer 5 has a function of bringing the energy levels of the second electrode 24 and the organic EL layer 23 closer to each other and improving the efficiency of injecting electrons from the second electrode 24 into the organic EL layer 23. The drive voltage of the organic EL element 30 can be lowered. The electron injection layer 5 is also called a cathode buffer layer.

Further, a functional layer is provided between the first electrode 21 and the second electrode 24. This functional layer includes the hole injection layer 1, the hole transport layer 2, the light emitting layer 3, the electron transport layer 4, and the electron injection layer 5. In addition to this description, the functional layer may have, for example, a three-layer laminated structure of a hole injection layer / hole transport layer, a light emitting layer, and an electron transport layer / electron injection layer.

The second electrode 24 is a cathode of the organic EL element 30a, and is provided so as to cover the organic EL layer 23 and the edge cover 22 as shown in FIG. Further, the second electrode 24 is provided in common to the plurality of organic EL elements 30a, and constitutes a low power supply voltage electrode (ELVSS). Further, the second electrode 24 is connected to a low power supply voltage source (not shown) via the terminal portion E. Further, the second electrode 24 has a function of injecting electrons into the organic EL layer 23. Further, the second electrode 24 is more preferably made of a material having a small work function in order to improve the electron injection efficiency into the organic EL layer 23.

Specifically, examples of the material constituting the second electrode 24 include silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), and gold. (Au), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), lithium fluoride (LiF) and the like can be mentioned. Further, the second electrode 24 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), asstatin (At) / oxidized asstatin (AtO _2). ), Lithium (Li) / Aluminum (Al), Lithium (Li) / Calcium (Ca) / Aluminum (Al), Lithium Fluoride (LiF) / Calcium (Ca) / Aluminum (Al), etc. You may.

Further, the second electrode 24 may be formed of, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). .. Further, the second electrode 24 may be formed by laminating a plurality of layers made of the above materials.

Examples of materials having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), and sodium. (Na) / Potassium (K), Lithium (Li) / Aluminum (Al), Lithium (Li) / Calcium (Ca) / Aluminum (Al), Lithium Fluoride (LiF) / Calcium (Ca) / Aluminum (Al) And so on.

The sealing layer 28 is provided in the display device 50a so as to cover a plurality of organic EL elements (light emitting elements) 30a. Further, as shown in FIG. 3, the sealing layer 28 has a first inorganic sealing film 25 provided so as to cover the second electrode 24 and an organic sealing provided on the first inorganic sealing film 25. It includes a waterproof film 26 and a second inorganic sealing film 27 provided so as to cover the organic sealing film 26, and has a function of protecting the organic EL layer 23 from moisture, oxygen, and the like.

The first inorganic sealing film 25 is provided on a plurality of organic EL elements 30a. Further, the second inorganic sealing film 27 is provided above the organic sealing film 26, and is formed so as to seal the organic sealing film 26 together with the first inorganic sealing film 25. Further, the first inorganic sealing film 25 and the second inorganic sealing film 27 are formed by, for example, a CVD (Chemical vapor Deposition) method using CMM (Common Metal Mask), and for example, silicon oxide ( SiO ₂₎ or aluminum oxide _{(Al 2 O} 3), the silicon nitride (SiNx (x, such as a four-nitride three silicon _(Si 3 _{N 4)} positive number)), composed of an inorganic material such as silicon carbonitride (SiCN) Has been done.

The organic sealing film 26 is made of an organic material that can be applied by an inkjet method, such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, or a polyamide resin. Further, as illustrated in FIG. 3, the film thickness of the organic sealing film 26 is configured to be thicker than the film thickness of the first inorganic sealing film 25 and the film thickness of the second inorganic sealing film 27. There is. Specifically, the first inorganic sealing film 25 and the second inorganic sealing film 27 are each formed, for example, with a film thickness of 1 μm. On the other hand, the organic sealing film 26 is formed, for example, with a film thickness of 10 μm.

Further, as shown in FIG. 1, the display device 50a includes a frame-shaped first bank 45 surrounding the display area D and a frame-shaped second bank 46 surrounding the first bank 45 in the frame area F. The first bank 45 and the second bank 46 regulate the wet spread of the organic sealing film 26 applied by an inkjet method or the like. The edge 26e (FIG. 6) of the organic sealing film 26 is defined by a bank. The bank also includes a first bank 45 and a second bank 46. In this way, by providing the first bank 45 and the second bank 46 as banks, the wet spread of the organic sealing film 26 can be more reliably regulated.

The first bank 45 is formed of, for example, the same layer as the flattening film 19 and made of the same material. Further, as illustrated in FIG. 6, the first bank 45 is configured to overlap with the edge 26e of the organic sealing film 26. Further, as shown by the alternate long and short dash line in FIG. 1, the second electrode 24 is provided so as to cover the display area D in a plan view and between the first bank 45 and the display area D. ..

Further, as shown in FIG. 6, the second bank 46 is, for example, the same layer as the flattening film 19, the lower bank 46a formed of the same material, and the same layer as the edge cover 22 (FIG. 3). Moreover, it is formed of the same material and includes an upper layer bank 46b laminated on the lower layer bank 46a.

Further, in the display device 50a of the present embodiment, as illustrated in FIG. 6, the edge 25e of the first inorganic sealing film 25 and the edge 27e of the second inorganic sealing film 27 are formed in the frame region F (FIG. 1). , Located outside the edge 26e of the organic sealing film 26. Further, as shown in FIG. 6, since the edge 27e of the second inorganic sealing film 27 is located outside the edge 25e of the first inorganic sealing film 25, the sealing layer 28 (FIG. 3). In the above, the second inorganic sealing film 27 of the outermost layer covers the plurality of organic EL elements 30a, and the sealing performance for each organic EL element 30a can be surely improved.

Further, in the display device 50a, as shown in FIG. 6, a trench T formed of a slit provided in the flattening film 19 is provided, and in this trench T, the second electrode 24 is the same as the first electrode 21. It is electrically connected to the electrode conductive portion A1 which is a layer and is formed of the same material. Further, as shown in FIG. 6, the electrode conductive portion A1 is the same layer as the wiring layer of the thin film transistor layer 20a (FIG. 3), for example, the source wire Sa, and is formed of the same material as the wiring conductive portion S1. It is electrically connected in the frame area F. Further, the wiring conduction portion S1 is electrically connected to the above-mentioned low power supply voltage source via the routing wiring and the terminal portion E (not shown), and the low power supply voltage source and the second electrode 24 are electrically connected to each other. To.

The display device 50a described above turns on the first thin film transistor 9a by inputting a gate signal to the first thin film transistor 9a via the gate line 12 in each subpixel P, and turns on the first thin film transistor 9a and turns on the second thin film transistor 9a via the source line Sa. A predetermined voltage corresponding to the source signal is written to the gate electrode 12b of 9b and the capacitor 9c, and the current from the specified power supply line Sb is supplied to the organic EL layer 23 based on the gate voltage of the second thin film transistor 9b. As a result, the light emitting layer 3 of the organic EL layer 23 emits light to display information.

Further, in the display device 50a, even if the first thin film transistor 9a is turned off, the gate voltage of the second thin film transistor 9b is held by the capacitor 9c, so that the light emitting layer 3 determines until the gate signal of the next frame is input. Luminescence is maintained.

Next, the manufacturing method of the display device 50a of the present embodiment will be specifically described with reference to FIG. 7. FIG. 7 is a flowchart showing a manufacturing method of the display device shown in FIG.

As shown in FIG. 7, the display device 50a is mounted by mounting the thin film transistor layer forming step S1, the organic EL element forming step S2, the sealing layer forming step S3, the flexibility step S4, and the dividing step S5. Includes step S6.

A multi-chamfering method using a mother substrate (not shown) is adopted for manufacturing the display device 50a, and each of the above steps is carried out using the mother substrate. Further, the mother substrate is a substrate that serves as a base substrate 10, and has a plurality of panel constituent areas that constitute a display panel included in the display device 50a.

The thin film transistor layer forming step S1 includes a base coat film forming step S11, a gate electrode forming step S12, a gate insulating film forming step S13, a semiconductor layer forming step S14, an interlayer insulating film forming step S15, and a source / drain electrode forming step S16. And the flattening film forming step S17.

In the base coat film forming step S11, on the surface of the mother substrate, for example, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy; x> y), silicon nitride (SiNxOy; An inorganic insulating film such as x> y) is formed to form the base coat film 11.

Next, in the gate electrode forming step S12, a titanium film, an aluminum film, and a titanium film are sequentially formed on the mother substrate on which the base coat film 11 is formed by, for example, a sputtering method to form a laminated conductive film, and then the laminated conductive film is formed. The laminated conductive film is patterned by photolithography to form gate electrodes 12a and 12b. At this time, the gate wire 12 and various routing wires are also formed from the laminated conductive film forming the gate electrodes 12a and 12b.

Subsequently, in the gate insulating film forming step S13, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy; x> y), and oxidation nitride on the mother substrate on which the gate electrodes 12a and 12b are formed. The gate insulating film 13 is formed by forming an inorganic insulating film such as silicon (SiNxOy; x> y) in a single layer or in a laminated manner.

Next, in the semiconductor layer forming step S14, a semiconductor film is formed on the mother substrate on which the gate insulating film 13 is formed, for example, by a CVD method, and the semiconductor film is subjected to crystallization treatment or low resistance as necessary. After the chemical vapor deposition treatment, the semiconductor film is patterned by photolithography (resist coating, prebaking treatment, exposure treatment, development treatment, post-baking treatment, etching treatment and resist peeling treatment) to form semiconductor layers 14a and 14b. ..

Subsequently, in the interlayer insulating film forming step S15, silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiOxNy; x> are placed on the mother substrate on which the semiconductor layers 14a and 14b are formed, for example, by a CVD method. y), an inorganic insulating film such as silicon nitride oxide (SiNxOy; x> y) is formed to form the first interlayer insulating film 15. Subsequently, on the first interlayer insulating film 15, for example, by a CVD method, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy; x> y), silicon nitride (SiNxOy; x> y). The second interlayer insulating film 17 is formed by forming an inorganic insulating film such as the above. The interlayer insulating film forming step S15 includes an upper conductive layer forming step of forming the upper conductive layer 16 provided between the first interlayer insulating film 15 and the second interlayer insulating film 17.

Next, in the source-drain electrode forming step S16, a titanium film, an aluminum film, and a titanium film are sequentially formed on the mother substrate on which the second interlayer insulating film 17 is formed by, for example, a sputtering method to form a laminated conductive film. After the formation, the laminated conductive film is patterned by photolithography to form the source electrode 18a and the drain electrode 18b. At this time, the source wire Sa and the like are also formed from the laminated electric film forming the source electrode 18a and the drain electrode 18b.

Subsequently, in the flattening film forming step S17, a photosensitive resin material such as a polyimide resin is applied onto the mother substrate on which the source electrode 18a and the drain electrode 18b are formed by a known coating method such as a spin coating method or an inkjet method. Is applied. Then, the coating film of the photosensitive resin material is subjected to prebaking treatment, exposure treatment, developing treatment and post-baking treatment, and the coating film is patterned to form the flattening film 19. At this time, the lower bank 46a of the first bank 45 and the second bank 46 is also formed from the coating film forming the flattening film 19. That is, the flattening film forming step S17 also serves as a bank forming step of forming the first bank 45 as a bank. In this bank forming step, the first bank 45 is formed so that the region surrounded by the first bank 45 has a rectangular shape (see, for example, FIG. 1).

As described above, in the thin film transistor layer forming step S1, the thin film transistor layer 20a is formed.

The organic EL element forming step S2 includes a first electrode forming step S21, an edge cover forming step S22, an organic EL layer forming step S23, and a second electrode forming step S24. The organic EL element forming step S2 is an example of a light emitting element forming step.

In the first electrode forming step S21, an indium tin oxide (ITO) film, a silver alloy film, and an indium tin oxide (ITO) film are sequentially formed on the mother substrate on which the thin film transistor layer 20a is formed, for example, by a sputtering method. A film is formed to form a laminated conductive film. Then, the laminated conductive film is patterned by photolithography to form the first electrode 21.

Next, in the edge cover forming step S22, a photosensitive resin material such as a polyimide resin is applied onto the mother substrate on which the first electrode 21 is formed by a known coating method such as a spin coating method. Then, the coating film of the photosensitive resin material is subjected to prebaking treatment, exposure treatment, developing treatment and post-baking treatment, and the coating film is patterned to form the edge cover 22. At this time, the upper bank 46b of the second bank 46 is also formed from the coating film forming the edge cover 22.

Subsequently, in the organic EL layer forming step S23, the hole injection layer 1 and the hole transport are carried out on the mother substrate on which the edge cover 22 is formed by using a known FMM (Fine Metal Mask), for example, by a vacuum vapor deposition method. The layer 2, the light emitting layer 3, the electron transport layer 4, and the electron injection layer 5 are formed in this order to form the organic EL layer 23 on each first electrode 21.

Next, in the second electrode forming step S24, a silver alloy film is formed on the mother substrate on which the organic EL layer 23 is formed by using a CMM that can be patterned in units of display panels, for example, by a vacuum vapor deposition method. , The second electrode 24 is formed in common with the plurality of organic EL elements 30a.

As described above, in the organic EL element forming step S2, a plurality of organic EL elements (light emitting elements) 30a are formed on the thin film transistor layer 20a.

In the sealing layer forming step S3, the sealing layer 28 is formed so as to cover the plurality of organic EL elements 30a.

Here, the detailed process of the sealing layer forming step S3 in the manufacturing method of the display device 50a of the present embodiment will be specifically described with reference to FIGS. 8 to 10. FIG. 8 is a flowchart showing a detailed step in the sealing layer forming step shown in FIG. 7. FIG. 9 is a diagram illustrating a specific processing method of the ashing process in the partial removal step shown in FIG. 8, and FIGS. 9 (a) and 9 (b) show the first ashing process and the second ashing process, respectively. It is a figure explaining the specific processing method of the ashing process. FIG. 10 is a diagram for explaining the specific effect of the partial removal step, and FIGS. 10A and 10B show the state of the main part configuration before and after the partial removal step, respectively. It is a figure explaining.

In the sealing layer forming step S3, first, the first inorganic sealing film forming step S31 for forming the first inorganic sealing film 25 on the organic EL element 30a is performed.

In the first inorganic sealing film forming step S31, silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride are used on the mother substrate on which the organic EL element 30a is formed, for example, by a CVD method. The first inorganic sealing film 25 is formed by forming an inorganic insulating film such as (SiOxNy; x> y) or silicon nitride (SiNxOy; x> y) in a single layer or in a laminated manner.

Next, in the sealing layer forming step S3, the organic sealing film forming step S32 for forming the organic sealing film 26 on the first inorganic sealing film 25 is performed.

In the organic sealing film forming step S32, as shown in FIG. 8, a coating step S321 for applying an organic material for forming an organic sealing film 26 inside the first bank 45 and a coating step S321 for curing the applied organic material are performed. A curing step S322 and a partial removing step S323 for removing the superposed portion of the organic material superimposed on the first bank 45 are included.

The coating step S321 is carried out by applying an organic material such as an acrylic resin on the mother substrate on which the first inorganic sealing film 25 is formed, for example, by an inkjet method.

The curing step S322 is performed by curing the applied organic material by, for example, irradiating the coated organic material with ultraviolet rays.

In the partial removal step S323, during the coating step S321, the liquid organic material is in a state of riding on the first bank 45, and in this riding state, the organic material is cured in the curing step S322 to obtain the first state. The superposed portion (for example, shown by "26a" in FIG. 10A) formed in a superposed state on the bank 45 is removed. As a result, the organic sealing film 26 is formed on the first inorganic sealing film 25 inside the first bank 45.

Further, the partial removal step S323 is performed, for example, by performing an ashing process using a predetermined processing gas. For this processing gas, for example, N ₂ O gas, O ₂ gas, or NO gas is used. Further, the partial removal step S323 includes a first ashing process and a second ashing process shown in FIGS. 9A and 9B, respectively.

Specifically, in the first ashing process, as shown in FIG. 9A, one of the opposing side portions LA and LB of the rectangular region surrounded by the first bank 45 is exposed. As described above, the ashing process is performed with the rectangular first mask M1 installed.

Further, in the second ashing process, as shown in FIG. 9B, a rectangular second mask M2 is installed so that the other facing side portions TA and TB facing each other in the above-mentioned regions are exposed. The above ashing process is performed in this state.

By performing the partial removal step S323 including the first ashing treatment and the second ashing treatment as described above, as illustrated in FIG. 10A, a superposed portion 26a of the organic material is formed on the first bank 45. Even in this case, as illustrated in FIG. 10B, the superposed portion 26a can be removed by ordering the end portion of the organic sealing film 26 and the surface of the first bank 45. As a result, the organic sealing film 26 can be formed inside the first bank 45, for example, in an appropriate shape without curling at the end of the organic sealing film 26. ..

In the above description, the case where the ashing process using a predetermined processing gas is applied to the partial removing step S323 has been described, but this embodiment removes the superposed portion 26a formed on the first bank 45. If this is the case, the process is not limited to this, and for example, the step of removing the superposed portion 26a by polishing it may be performed. However, it is preferable to perform the ashing treatment using the treatment gas as described above because the overlapping portion 26a can be easily and surely removed.

Here, with reference to FIG. 11, the effect of performing a two-step ashing process including a first ashing process and a second ashing process as the partial removal step S323 will be specifically described. FIG. 11 is a diagram for explaining the specific effect of the ashing process, and FIGS. 11 (a) and 11 (b) are diagrams for explaining the method and result example of the ashing process in the comparative example, respectively. 11 (c) is a diagram illustrating an example of the result of the ashing process.

First, as a comparative example, a case where a partial removal step is performed by performing a single ashing process will be described. In the case of this comparative example, as shown in FIG. 11A, an ashing process using the above-mentioned processing gas is performed in a state where the rectangular third mask M3 is installed so as to be inside the first bank 45. Is done. Therefore, in this comparative example, the processing gas wraps around the inside of the third mask M3 at the four corners of the third mask M3, and the wrapping processing gas performs an ashing treatment at the four corners of the above region. .. As a result, in this comparative example, as illustrated by the crosshatch portion in FIG. 11B, a region CAA in which the ashing treatment has been performed is generated. That is, in this comparative example, the predetermined gas wraps around inside each corner of the four corners of the rectangular first bank 45 and removes the cured organic material portion, that is, the corner portion of the organic sealing film 26. I have something to do.

On the other hand, in the present embodiment, as shown in FIGS. 9A and 9B, since the first ashing process and the second ashing process are performed, the four corners of the first mask M1 It is possible to prevent the processing gas from improperly wrapping around at each corner of the above and at each corner of the four corners of the second mask M2. As a result, in the present embodiment, as illustrated by the crosshatch portion in FIG. 11C, the ashing-treated region AA has the same rectangular opening as the inner region of the first bank 45. It can be frame-shaped and can prevent the corners of the organic sealing film 26 from being removed. As described above, in the present embodiment, since the two-step ashing process is performed as the component removing step S323, it is possible to perform an appropriate ashing process, and the partial removing step S323 can be performed accurately. it can.

Next, in the sealing layer forming step S3, the second inorganic sealing film forming step S33 for forming the second inorganic sealing film 27 on the organic sealing film 26 is performed.

In the second inorganic sealing film forming step S33, silicon oxide (SiOx), silicon nitride (SiNx), and oxynitriding are used on the mother substrate on which the organic sealing film 26 is formed, for example, by a CVD method. A second inorganic sealing film 27 is formed by forming an inorganic insulating film such as silicon (SiOxNy; x> y) or silicon nitride (SiNxOy; x> y) in a single layer or in a laminated manner.

As described above, in the sealing layer forming step S3, the sealing layer 28 on which the first inorganic sealing film 25, the organic sealing film 26, and the second inorganic sealing film 27 are laminated is a plurality of organic EL elements 30a. It is formed so as to cover.

Subsequently, returning to FIG. 7, in the flexible step S4, after attaching a protective sheet (not shown) to the surface of the mother substrate on which the sealing layer 28 is formed, the glass substrate side is attached to the lower surface of the mother substrate. The glass substrate is peeled off from the lower surface of the mother substrate by irradiating the laser beam from the surface, and a protective sheet (not shown) is attached to the lower surface of the mother substrate from which the glass substrate has been peeled off.

In the dividing step S5, the mother substrate from which the glass substrate has been peeled off is divided into display panel units by irradiation with laser light. At this time, the dividing line when dividing the mother substrate is a boundary between each panel constituent area and its outer region, and is a portion corresponding to the outer edge of each panel constituent area (not shown). By dividing the mother substrate in this way, a plurality of the above display panels can be obtained.

In the mounting step S6, the FPC is connected to the terminal portion E to the display panel obtained by dividing the mother substrate.

As described above, the display device 50a can be manufactured.

In the manufacturing method of the display device 50a of the present embodiment configured as described above, the organic sealing film forming step S32 coats the organic material forming the organic sealing film 26 inside the first bank 45, and the coating step S321. A curing step S322 for curing the applied organic material, and a partial removing step S323 for removing the superimposed portion 26a of the organic material superimposed on the first bank 45 are included. As a result, in the manufacturing method of the display device 50a of the present embodiment, unlike the above-mentioned conventional example, even if the end portion of the organic sealing film 26 is curled, the curl can be removed as the superposed portion 26a. .. As a result, in the manufacturing method of the display device 50a of the present embodiment, unlike the above-mentioned conventional example, the second inorganic sealing film 27 can be appropriately formed on the organic sealing film 26, and the sealing layer 28 can be formed. It is possible to prevent deterioration of the sealing performance and suppress deterioration of the organic EL element 30a. Further, in the manufacturing method of the display device 50a of the present embodiment, it is possible to prevent the applied organic material from being cured beyond the first bank 45, so that an appropriate second inorganic sealing film 27, and thus an appropriate second inorganic sealing film 27, is suitable. The sealing layer 28 can be reliably formed, and in the above-mentioned dividing step S5, it is possible to prevent an abnormality from occurring in the dividing process.

<< Modified example of the first embodiment >>
FIG. 12 is a flowchart showing a manufacturing method of a modified example of the display device shown in FIG. FIG. 13 is a diagram for explaining a determination process for determining whether or not the superimposed portion shown in FIG. 12 exists, and FIGS. 13 (a) and 13 (b) show cases where the superimposed portion exists and that of FIG. 13 (b), respectively. It is a figure explaining the case which the superimposition part does not exist.

In the figure, the main difference between the present embodiment and the first embodiment is that after the curing step S322, a determination step of determining whether or not the overlapping portion 26a of the organic material is present is performed. The elements common to the first embodiment are designated by the same reference numerals, and the duplicated description thereof will be omitted.

In the manufacturing method of the display device 50a of the present embodiment, as shown in FIG. 12, the discrimination step S324 is executed after the curing step S322. That is, in this determination step S324, it is determined whether or not the superposed portion 26a of the organic material exists on the first bank 45. Then, when it is determined that the superposed portion 26a of the organic material is present, the partial removal step S323 is carried out, and when it is determined that the superposed portion 26a of the organic material does not exist, the partial removal step S323 is omitted. , The second inorganic sealing film forming step S33 is executed.

Specifically, in the determination step S324, as shown in FIGS. 13 (a) and 13 (b), the image pickup result by the image pickup unit 100 is used. That is, the manufacturing apparatus of the display device 50a is provided with, for example, a CCD camera as an imaging unit 100 for photographing on the first bank 45, and a data processing unit (not shown) indicates data indicating the imaging result of the imaging unit 100. Is processed to determine whether or not the superposed portion 26a is formed on the first bank 45.

As described above, in the present modification, by carrying out the determination step S324, it is possible to carry out the partial removal step S323 only when it is determined that the overlapped portion 26a exists. As a result, in this modification, the manufacturing method of the display device 50a can be simplified.

Further, in this modification, since the image pickup result by the imaging unit 100 is used in the discrimination step S324, the presence or absence of the superposed portion 26a can be easily and accurately discriminated.

<< Second Embodiment >>
FIG. 14 is a flowchart showing a method of manufacturing a display device according to a second embodiment of the present invention. FIG. 15 is a diagram illustrating a foreign matter determination step for determining whether or not the foreign matter shown in FIG. 14 is present, and FIGS. 15 (a) and 15 (b) show the case where the foreign matter is present and the foreign matter, respectively. It is a figure explaining the case which does not exist.

In the figure, the main difference between the present embodiment and the first embodiment is that a foreign matter determination step for determining whether or not a foreign matter is present is performed after the partial removal step S323. The elements common to the first embodiment are designated by the same reference numerals, and the duplicated description thereof will be omitted.

In the manufacturing method of the display device 50a of the present embodiment, as shown in FIG. 14, the foreign matter discrimination step S325 is executed after the partial removal step S323. That is, in this foreign matter determination step S325, it is determined whether or not the foreign matter 400 (FIG. 15A) exists on the first bank 45. Then, when it is determined that the foreign matter 400 is present, the foreign matter removing step S326 is carried out, and when it is determined that the foreign matter 400 is not present, the foreign matter removing step S326 is omitted and the second inorganic sealing film is formed. Step S33 is executed.

Specifically, in the foreign matter determination step S326, as shown in FIGS. 15A and 15B, the image pickup result by the imaging unit 100 is used. That is, the manufacturing apparatus of the display device 50a is provided with, for example, a CCD camera as an imaging unit 100 for photographing on the first bank 45, and a data processing unit (not shown) indicates data indicating the imaging result of the imaging unit 100. By processing the above, it is determined whether or not the foreign matter 400 is formed on the first bank 45. Further, the foreign matter 400 is not removed by the ashing treatment in the partial removal step S323, for example, is made of metal.

Further, in the foreign matter removing step S326, the foreign matter 400 is removed from the first bank 45 by, for example, polishing the detected foreign matter 400. Thereby, in the present embodiment, the surface of the first bank 45 can be ordered, and the second inorganic sealing film 27 can be appropriately formed on the organic sealing film 26.

As described above, in the present embodiment, the foreign matter 400 on the first bank 45 is removed by carrying out the foreign matter determination step S325, so that the sealing performance of the sealing layer 28 is surely lowered by the foreign matter 400. Can be prevented.

Further, in the present embodiment, in the foreign matter removing step S326, the foreign matter 400 is removed by polishing the foreign matter 400, so that the foreign matter 400 can be reliably removed.

Further, in the present embodiment, since the image pickup result by the imaging unit 100 is used in the foreign matter discrimination step S325, the presence or absence of the foreign matter 400 can be easily and accurately discriminated.

Further, in each of the above embodiments, a display device in which the first electrode is used as an anode and the second electrode is used as a cathode is illustrated, but in the present invention, the laminated structure of the light emitting element layer is inverted and the first electrode is used as a cathode. It can also be applied to a display device using the second electrode as an anode.

Further, in each of the above embodiments, the organic EL display device has been described as an example of the display device, but the present invention can be applied to a display device including a plurality of light emitting elements driven by an electric current. For example, it can be applied to a display device provided with a QLED (Quantum-dot light emitting diode) which is a light emitting element using a quantum dot-containing layer.

In addition to the above description, each of the above embodiments may be combined as appropriate.

The present invention relates to a method for manufacturing a display device capable of preventing deterioration of the sealing performance of the sealing layer and suppressing deterioration of the organic EL element even when the end portion of the organic sealing film is curled. It is useful.

D Display area F Frame area 20a Thin film transistor layer 21 First electrode (anode)
23 Organic EL layer (light emitting layer)
24 Second electrode (cathode)
25 First inorganic sealing film 26 Organic sealing film 26a Overlapping portion 27 Second inorganic sealing film 28 Sealing layer 30a Organic EL element (light emitting element)
45 First bank 50a Display device 100 Imaging unit

Claims (8)

A display region, a frame region surrounding the display region, a thin film transistor layer, and a light emitting element layer each containing a first electrode, a light emitting layer, and a second electrode, and a plurality of light emitting elements having different emission colors are formed. A method of manufacturing a display device provided with,
A sealing layer forming step of forming a sealing layer having a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film so as to cover the plurality of light emitting elements.
The frame region includes a bank forming step of forming a frame-shaped bank that surrounds the display region and defines the end portion of the organic sealing film.
The sealing layer forming step is
A first inorganic sealing film forming step of forming the first inorganic sealing film on the plurality of light emitting elements, an organic sealing film forming step of forming the organic sealing film on the first inorganic sealing film, And a second inorganic sealing film forming step of forming the second inorganic sealing film on the organic sealing film.
The organic sealing film forming step is
A coating step of applying an organic material that forms the organic sealing film inside the bank, and
A curing step of curing the applied organic material and
A method for manufacturing a display device, which comprises a partial removing step of removing a superposed portion of an organic material superimposed on the bank. After the curing step, a determination step of determining whether or not a superposed portion of the organic material is present is performed.
In the discrimination step,
When it is determined that the overlapping portion of the organic material is present, the partial removal step is carried out.
The method for manufacturing a display device according to claim 1, wherein when it is determined that the overlapping portion of the organic material does not exist, the implementation of the partial removal step is omitted. The method for manufacturing a display device according to claim 2, wherein an imaging result obtained by an imaging unit is used in the determination step. After the partial removal step, a foreign matter determination step of determining whether or not a foreign matter is present on the bank is performed.
In the foreign matter discrimination step
The method for manufacturing a display device according to claim 1, wherein when it is determined that the foreign matter is present, the foreign matter removing step of removing the foreign matter is performed. The method for manufacturing a display device according to claim 4, wherein in the foreign matter removing step, the foreign matter is removed by polishing the foreign matter. The method for manufacturing a display device according to claim 4 or 5, wherein the image pickup result by the imaging unit is used in the foreign matter discrimination step. The method for manufacturing a display device according to any one of claims 1 to 6, wherein the partial removal step is an ashing process using a predetermined processing gas. In the bank forming step, the bank is formed so that the area surrounded by the bank has a rectangular shape.
The partial removal step is
The first ashing process in which the ashing process is performed with the first mask installed so that one of the opposite sides of the area facing each other is exposed.
The display device according to claim 7, further comprising a second ashing process in which the ashing process is performed with the second mask installed so that the other opposite side portions facing each other are exposed. Production method.

Images