WO2019119879A1 - 一种有效抑制手机功率放大器低频杂波的匹配电路结构及方法 - Google Patents

一种有效抑制手机功率放大器低频杂波的匹配电路结构及方法 Download PDF

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WO2019119879A1
WO2019119879A1 PCT/CN2018/104460 CN2018104460W WO2019119879A1 WO 2019119879 A1 WO2019119879 A1 WO 2019119879A1 CN 2018104460 W CN2018104460 W CN 2018104460W WO 2019119879 A1 WO2019119879 A1 WO 2019119879A1
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network
circuit structure
matching
stage
matching circuit
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PCT/CN2018/104460
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English (en)
French (fr)
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周佳辉
胡滨
郭嘉帅
宣凯
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深圳飞骧科技有限公司
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Priority to US16/956,249 priority Critical patent/US11575352B2/en
Publication of WO2019119879A1 publication Critical patent/WO2019119879A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

Definitions

  • the invention belongs to the technical field of radio frequency power amplifiers, and particularly relates to a matching circuit structure and method for effectively suppressing low frequency clutter of a mobile phone power amplifier.
  • PAs RF power amplifiers
  • the RF power amplifier amplifies the modulated RF signal to a certain power value and transmits it through the antenna.
  • the PA In order for the PA to have a sufficiently high transmit power, it is often necessary to make the PA's signal transmission gain (Gain) high enough to achieve high power transmission requirements.
  • Gain signal transmission gain
  • the technical problem to be solved by the present invention is to provide a matching circuit structure for effectively suppressing low frequency clutter of a mobile phone power amplifier.
  • a frequency selective input matching structure By introducing a frequency selective input matching structure, the signal amplification capability of the PA filtering low frequency portion is suppressed at the input end, and the low frequency portion of the PA is reduced.
  • the transmission gain effectively suppresses the amplification of the PA low frequency clutter signal of the mobile phone.
  • the matching circuit structure for effectively suppressing the low frequency clutter of the mobile phone power amplifier comprises: the input end serially connected to the input end of the output end, the DC blocking capacitor C2, the PA and the output matching network, wherein the method further comprises: a negative feedback network, parallel At the PA transmitting end;
  • the negative feedback network includes: a resonant capacitor C1, a resonant inductor L1, and a matching inductor L2;
  • the resonant capacitor C1 and the resonant inductor L1 are connected in parallel to form a frequency selective network, and the frequency selective network connects the matching inductor L2 to ground in series.
  • one or more intermediate amplifying units are further connected between the PA and the output matching network in the matching circuit structure, and the intermediate amplifying unit comprises an inter-stage matching network and a PA connected in series.
  • the PA in the intermediate amplifying unit passes through the back hole to the ground.
  • the resonant capacitor C1 and the resonant inductor L1 connected in parallel to the transmitting end of the PA resonate at a low frequency, thereby increasing the negative feedback impedance of the low frequency portion of the first stage and reducing the low frequency signal amplification capability of the PA input.
  • the PA is a three-stage PA amplification network
  • the three-stage PA amplification network includes: a first-stage PA, a negative feedback network, a first-stage matching network, a second-level PA, and a second-level matching network.
  • the negative feedback network is connected in parallel to the transmitting end of the first stage PA.
  • the present invention also provides a low frequency clutter suppression method using the matching circuit structure for effectively suppressing low frequency clutter of a mobile phone power amplifier as described above, comprising: connecting the negative feedback network in parallel with the PA transmission of the matching circuit structure end.
  • one or more intermediate amplification units are connected between the PA in the matching circuit structure and the output matching network, the intermediate amplification unit comprising an inter-stage matching network and a PA connected in series.
  • the PA in the intermediate amplifying unit is passed through the back hole to the ground.
  • the resonant capacitor C1 and the resonant inductor L1 connected in parallel to the transmitting end of the PA resonate at a low frequency, thereby increasing the negative feedback impedance of the low frequency portion of the first stage.
  • the PA low-frequency clutter signal is effectively suppressed.
  • the matching circuit structure of the invention effectively suppresses low-frequency clutter of the mobile phone power amplifier, and has a simple circuit structure and is easy to implement.
  • 1 is a PA circuit structure designed by the present invention
  • 2 is a three-stage amplifying circuit structure of a conventional PA
  • Figure 3 shows the schematic diagram of the first-stage negative feedback network simulation.
  • Figure 4 shows the comparison of the first-order feedback impedance simulation results for a frequency-selective network and a frequency-selected network.
  • FIG. 5 is a simulation diagram of the transmission gain of the PA circuit structure of the present invention and the existing PA circuit structure.
  • an embodiment of the present invention provides a matching circuit structure for effectively suppressing low frequency clutter of a power amplifier of a mobile phone. The details are described in detail below with reference to the embodiments and the accompanying drawings.
  • the design structure of the three-stage power amplifier is adopted, and the output terminal can obtain greater output power and gain.
  • the matching circuit structure includes an input DC blocking capacitor C2, a first stage PA, a negative feedback network, an interstage matching network 1, a second stage PA, an interstage matching network 2, a third stage PA, and an output. Match the network.
  • the input end of the matching circuit structure sequentially passes through the input capacitor C2, the first stage PA, the inter-stage matching 1, the second stage PA, the inter-stage matching 2, the third stage PA and the output matching network are connected in series to the output end.
  • the negative feedback network is connected in parallel to the transmitting end of the first stage PA.
  • the negative feedback network includes a resonant capacitor C1, a resonant inductor L1, and a matching inductor L2.
  • the resonant capacitor C1 and the resonant inductor L1 are connected in parallel to form a frequency selective network, and the frequency selective network is matched in series with the inductor L2 to the ground.
  • the signal is input from the input terminal, and the matching circuit structure input DC blocking capacitor C2 is mainly used for DC blocking.
  • the signal is first amplified by the first stage PA and used as the input of the second stage PA.
  • the signal is amplified by the second stage PA and the third stage PA, so that a larger output power can be generated.
  • the inter-stage matching network 1, the second-stage PA, the inter-stage matching network 2, and the third-stage PA constitute an intermediate amplifying unit 3.
  • the intermediate amplifying unit 3 is not limited to two levels, and may be one level or two levels.
  • the matching circuit structure provided by the embodiment of the present invention further connects one or more PAs between the first stage PA and the output matching network, and adds some power for each additional level of PA, thereby reducing the bias requirement for each PA, and further Improve PA stability.
  • the inter-stage matching network 1 or 2 is used to match the PA connected thereto, and the inter-stage matching network 1 or 2 is used to match the input power of the input second-level PA or the third-level PA, so that the entire The circuit works in an optimal state.
  • the inter-stage matching network 1 or 2 can use a T-type matching network impedance composed of a capacitor, an inductor and a resistor.
  • the output matching network can be composed of inductors, resistors and capacitors.
  • the resistors can generally be matched with 50 ohms.
  • the second stage PA of the matching circuit structure is connected to the ground through the parallel back hole to the ground, and the third stage PA is connected to the ground through the parallel back hole.
  • the signal is amplified by the first stage, since the frequency selective network resonates at a low frequency, the feedback impedance of the negative feedback network in the low frequency part is large, and the impedance of the high frequency part is small, thereby suppressing the amplification capability of the low frequency part, by inputting the second stage or the
  • the low-frequency signal of the third-stage PA has been suppressed by the first stage, and the signal amplification by the second-stage or third-stage PA cannot be performed, thereby suppressing the amplification of the low-frequency signal.
  • the invention provides a matching circuit structure for effectively suppressing low-frequency clutter of a mobile phone power amplifier, and the resonant inductor L1 and the resonant capacitor C1 are connected in parallel to the first-stage PA transmitting end to form a frequency selective network, which is increased by letting L1 and C1 resonate at a low frequency. With the negative feedback of the low frequency part, the low frequency signal cannot be amplified by the first stage PA, thereby suppressing the amplification of the low frequency signal.
  • the matching inductor L2 is mainly used to adjust the input matching of the entire PA, and the magnitude of the inductor L2 will directly affect the input matching.
  • the present invention also provides a low frequency clutter suppression method using the matching circuit structure for effectively suppressing low frequency clutter of a mobile phone power amplifier as described above, comprising: connecting a negative feedback network in parallel with a PA transmitting end of the matching circuit structure.
  • One or more intermediate amplification units are connected between the PA in the matching circuit structure and the output matching network, and the intermediate amplification unit includes an inter-stage matching network and a PA connected in series.
  • the resonant capacitor C1 and the resonant inductor L1 connected in parallel to the PA transmitting end resonate at a low frequency, thereby increasing the low-frequency partial feedback impedance.
  • the three-stage amplifying circuit structure of the existing mobile phone PA is compared with the matching circuit structure of the low-frequency clutter which effectively suppresses the mobile phone power amplifier shown in FIG. 1 , the biggest difference is that the resonant inductor L1 is missing at the input end.
  • a frequency selective network composed of a parallel capacitor circuit C1.
  • the first-stage negative feedback network simulation schematic diagram uses ADS to simulate the impedance of the negative feedback network.
  • the two ends of the circuit are respectively connected to the 50 ohm terminal, and the impedance of the input end of the negative feedback network is simulated with the frequency.
  • the gray thick line is the invention
  • the simulation curve, the gray thin line is the simulation curve of the existing circuit structure. It can be seen from the figure that the gain of the low-frequency part of the signal structure of the present invention is significantly lower than that of the existing circuit structure.
  • the matching circuit structure provided by the present invention effectively suppresses the vicinity of m5. Low frequency clutter. Since the transmission gain of the low frequency signal is low, the low frequency noise is effectively suppressed.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)

Abstract

一种有效抑制手机功率放大器低频杂波的匹配电路结构，属于射频功率发大器技术领域。电路结构包括：输入端依次串联至输出端的输入端、隔直电容C2、PA以及输出匹配网络，还包括：并联于所述PA发射端的负反馈网络；负反馈网络包括：谐振电容C1、谐振电感L1和匹配电感L2；谐振电容C1和谐振电感L1并联，构成选频网络，选频网络串联所述匹配电感L2到地。通过使用上述匹配电路结构可以有效抑制功率放大器低频杂波。

Description

一种有效抑制手机功率放大器低频杂波的匹配电路结构及方法 技术领域
本发明属于射频功率发大器技术领域，特别是涉及一种有效抑制手机功率放大器低频杂波的匹配电路结构及方法。
背景技术
随着通信系统的不断发展，手机的应用在我们的生活中日渐频繁。射频功率放大器(PA)是手机系统的重要组成部分，主要用于信号放大和发射。射频功率放大器将调制后的射频信号放大到一定的功率值，再通过天线发射出去。为了让PA拥有足够高的发射功率，往往需要将PA的信号传输增益(Gain)做的足够高才能够达到大功率传输的要求。但是由于PA Gain的提高，随之带来的将是工作频段之外的杂波信号的放大，而导致PA杂散过大的问题，从而严重影响通信质量。
发明内容
本发明所要解决的技术问题是提供一种有效抑制手机功率放大器低频杂波的匹配电路结构，通过引入选频输入匹配结构，在输入端抑制PA滤除低频部分的信号放大能力，降低PA低频部分的传输增益，有效抑制手机PA低频杂波信号的放大。
本发明的有效抑制手机功率放大器低频杂波的匹配电路结构包括：输入端依次串联至输出端的输入端、隔直电容C2、PA以及输出匹配网络，其特征在于，还包括：负反馈网络，并联于所述PA发射端；
所述负反馈网络包括：谐振电容C1、谐振电感L1和匹配电感L2；
所述谐振电容C1和所述谐振电感L1并联，构成选频网络，所述选频网络串联所述匹配电感L2到地。
优选地，所述匹配电路结构中的PA以及输出匹配网络之间还连接有一个或多个中间放大单元，所述中间放大单元包括依次串联的级间匹配网络和PA。
优选地，所述中间放大单元中的PA通过并联背孔到地。
优选地，所述并联至PA发射端的谐振电容C1、谐振电感L1谐振于低频，从而增加第一级低频部分的负反馈阻抗，降低PA输入端低频信号放大能力。
优选地，所述PA为三级PA放大网络，所述三级PA放大网络包括：第一级PA，负反馈网络，第一级间匹配网络，第二级PA，第二级间匹配网络，第三级PA；
所述负反馈网络并联于所述第一级PA的发射端。
此外，本发明还提供一种利用如上所述的有效抑制手机功率放大器低频杂波的匹配电路结构进行低频杂波抑制方法，包括：将所述负反馈网络并联于所述匹配电路结构的PA发射端。
优选地，将匹配电路结构中的PA以及输出匹配网络之间连接一个或多个中间放大单元，所述中间放大单元包括依次串联的级间匹配网络和PA。
优选地，将中间放大单元中的PA通过并联背孔到地。
优选地，所述并联至PA发射端的谐振电容C1、谐振电感L1谐振于低频，从而增加第一级低频部分的负反馈阻抗。
采用上述本发明提供的有效抑制手机功率放大器低频杂波的匹配电路结构，有效抑制了PA低频杂波信号。
本发明的有效抑制手机功率放大器低频杂波的匹配电路结构，电路结构简单，易于实现。
附图说明
图1是本发明所设计PA电路结构；
图2是现有PA的三级放大电路结构；
图3所示为第一级负反馈网络仿真原理图
图4所示为有选频网络和没有选频网络的第一级反馈阻抗仿真结果对比
图5是本发明PA电路结构与现有PA电路结构传输增益对比仿真图。
具体实施方式
以下结合附图和实施例，对本发明的具体实施方式进行更加详细的说明，以便能够更好地理解本发明的方案及其各个方面的优点。然而，以下描述的具体实施方式和实施例仅是说明的目的，而不是对本发明的限制。
参见图1，本发明实施例提供一种有效抑制手机功率放大器低频杂波的匹配电路结构。下面结合实施例及附图作进一步详细描述。
在本发明实施例中，采用三级功率放大器的设计结构，输出端可以获得更大的输出功率和增益。如图1所示，所述匹配电路结构包括输入隔直电容C2，第一级PA，负反馈网络，级间匹配网络1，第二级PA，级间匹配网络2，第三级PA以及输出匹配网络。所述匹配电路结构输入端依次通过输入电容C2，第一级PA，级间匹配1，第二级PA，级间匹配2，第三级PA以及输出匹配网络串联至输出端。
负反馈网络并联于第一级PA的发射端。负反馈网络包括：谐振电容C1、谐振电感L1和匹配电感L2。谐振电容C1和谐振电感L1并联，构成选频网络，选频网络串联匹配电感L2到地。
如图1所示，信号从输入端输入，所述匹配电路结构输入隔直电容C2主要用于DC的隔直作用。信号经过第一级PA进行第一次放大后作为第二级PA的输入，信号经过第二级PA、第三级PA放大最后输出，这样可以产生更大的输出功率。
如图1所示，级间匹配网络1、第二级PA、级间匹配网络2、第三级PA构成中间放大单元3。需要说明的是在本发明实施例中，中间放大单元3不局限于两级，可以为一级或两级以上。本发明实施例提供的匹配电路结构在第一级PA以及输出匹配网络之间还连接有一个或多个PA，每增加一 级PA增加一些功率，降低了对每个PA的偏压要求，进一步提高PA稳定性。
在本发明实施中，级间匹配网络1或2分别用来匹配与其连接的PA，级间匹配网络1或2用来匹配输入第二级PA或第三级PA增加的功率，从而可以使整个电路工作在最佳状态，级间匹配网络1或2可以采用电容，电感和电阻组成的T型匹配网络阻抗。输出匹配网络可由电感，电阻和电容组成，电阻一般可以选用50欧姆的匹配阻抗。
所述匹配电路结构的第二级PA通过并联背孔到地，第三级PA通过并联背孔到地。信号通过第一级放大时，由于选频网络谐振在低频，因此负反馈网络在低频部分的反馈阻抗较大，高频部分阻抗小，从而抑制低频部分的放大能力，通过输入第二级或第三级PA的低频信号已经被第一级抑制，无法通过第二级或第三级PA进行信号放大，从而抑制了低频信号的放大。
本发明提供的一种有效抑制手机功率放大器低频杂波的匹配电路结构，谐振电感L1和谐振电容C1并联至第一级PA发射端，构成选频网络，通过让L1和C1谐振于低频，增加了低频部分的负反馈，低频信号无法通过第一级PA进行信号放大，从而抑制了低频信号的放大。
所述匹配电感L2主要用于调节整个PA的输入匹配，电感L2的大小将直接影响输入匹配好坏。
此外，本发明还提供一种利用如上所述的有效抑制手机功率放大器低频杂波的匹配电路结构进行低频杂波抑制方法，包括：将负反馈网络并联于匹配电路结构的PA发射端。
将匹配电路结构中的PA以及输出匹配网络之间连接一个或多个中间放大单元，所述中间放大单元包括依次串联的级间匹配网络和PA。
将中间放大单元中的PA通过并联背孔到地。
并联至PA发射端的谐振电容C1、谐振电感L1谐振于低频，从而增加低频部分反馈阻抗。
如图2所示，现有手机PA的三级放大电路结构，与图1所示的有效抑制手机功率放大器低频杂波的匹配电路结构相比较，最大的区别在于在输入端缺少由谐振电感L1和谐振电容C1并联所组成的选频网络。
如图3所示，第一级负反馈网络仿真原理图，采用ADS对负反馈网络进行阻抗仿真，电路两端分别接入50欧姆终端，仿真负反馈网络的输入端阻抗随频率的变化
如图4所示，有选频网络和没有选频网络的第一级反馈阻抗仿真结果对比。粗线是带有有选频网络的阻抗仿真结果，细线是没有选频网络阻抗仿真结果，从图中可以明显发现，带有选频网络的仿真结果低频1.17GHz附近的阻抗明显较高。
如图5所示，以DCS(1800MHz)和PCS(1900MHz)手机频段的PA仿真为例，本发明提供的PA电路结构与现有PA电路结构传输增益对比仿真图，灰色粗线为本发明的仿真曲线，灰色细线为现有电路结构的仿真曲线。从图中可以对比发现，在低频部分信号的传输增益，本发明电路结构低频部分的增益明显低于现有电路结构，如图3所示，应用本发明提供的匹配电路结构有效抑制了m5附近的低频杂波。由于低频信号的传输增益较低，从而有效抑制了低频杂波。
需要说明的是，以上参照附图所描述的各个实施例仅用以说明本发明而非限制本发明的范围，本领域的普通技术人员应当理解，在不脱离本发明的精神和范围的前提下对本发明进行的修改或者等同替换，均应涵盖在本发明的范围之内。

Claims (9)

  1. 一种有效抑制手机功率放大器低频杂波的匹配电路结构，包括：输入端依次串联至输出端的输入端、隔直电容C2、PA以及输出匹配网络，其特征在于，还包括：负反馈网络，并联于所述PA发射端；
    所述负反馈网络包括：谐振电容C1、谐振电感L1和匹配电感L2；
    所述谐振电容C1和所述谐振电感L1并联，构成选频网络，所述选频网络串联所述匹配电感L2到地。
  2. 如权利要求1所述的匹配电路结构，其特征在于，所述匹配电路结构中的PA以及输出匹配网络之间还连接有一个或多个中间放大单元，所述中间放大单元包括依次串联的级间匹配网络和PA。
  3. 如权利要求2所述的匹配电路结构，其特征在于，所述每一个中间放大单元中的PA通过并联背孔到地。
  4. 如权利要求1所述的匹配电路结构，其特征在于，所述并联至PA发射端的谐振电容C1、谐振电感L1谐振于低频。
  5. 如权利要求1所述的匹配电路结构，其特征在于，所述PA为三级PA放大网络，所述三级PA放大网络包括：第一级PA，负反馈网络，第一级间匹配网络，第二级PA，第二级间匹配网络，第三级PA；
    所述负反馈网络并联于所述第一级PA的发射端。
  6. 一种利用如权利要求1至5任一项所述的有效抑制手机功率放大器低频杂波的匹配电路结构进行低频杂波抑制方法，其特征在于，包括：将所述负反馈网络并联于所述匹配电路结构的PA发射端。
  7. 如权利要求6所述的低频杂波抑制方法，其特征在于，将匹配电路结构中的PA以及输出匹配网络之间连接一个或多个中间放大单元，所述中 间放大单元包括依次串联的级间匹配网络和PA。
  8. 如权利要求6所述的低频杂波抑制的方法，其特征在于，将中间放大单元中的PA通过并联背孔到地。
  9. 如权利要求6所述的低频杂波抑制方法，其特征在于，所述谐振电容C1、所述谐振电感L1谐振于低频。
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