WO2019119235A1 - 一种显示器及其显示器制造方法 - Google Patents

一种显示器及其显示器制造方法 Download PDF

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Publication number
WO2019119235A1
WO2019119235A1 PCT/CN2017/117027 CN2017117027W WO2019119235A1 WO 2019119235 A1 WO2019119235 A1 WO 2019119235A1 CN 2017117027 W CN2017117027 W CN 2017117027W WO 2019119235 A1 WO2019119235 A1 WO 2019119235A1
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Prior art keywords
film layer
inorganic film
layer
display
color resist
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French (fr)
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林茂仲
赵小虎
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Priority to CN201780096328.XA priority Critical patent/CN111295772A/zh
Priority to PCT/CN2017/117027 priority patent/WO2019119235A1/zh
Publication of WO2019119235A1 publication Critical patent/WO2019119235A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the invention belongs to the technical field of display, and relates to a display and a display manufacturing method thereof.
  • OLED Organic Light Emitting Diode
  • OLED displays usually adopt RGB three-pixel display structure.
  • the manufacturing method of this OLED display requires the relative accuracy of the OLED evaporation process. Higher, therefore, the process yield of large-size OLED display has not been improved.
  • WOLED+CF white organic light emitting diode
  • CF color filter layer
  • the display method is to pass red, green and blue.
  • the color filter is attached to the substrate, and the white light emitted by the white organic light emitting diode passes through the color filters of red, green and blue respectively to obtain red, yellow and blue primary colors.
  • the manufacturing process of the display structure can reduce the difficulty of the OLED evaporation process and improve the yield of the large-size OLED display, in this structure, the CF makes the thickness of the overall display thick and cannot be bent, which limits the application range thereof.
  • OLED Organic Light Emitting Diode
  • OLED displays usually adopt RGB three-pixel display structure.
  • the manufacturing method of this OLED display requires the relative accuracy of the OLED evaporation process. Higher, therefore, the process yield of large-size OLED display has not been improved.
  • WOLED+CF white organic light emitting diode
  • CF color filter layer
  • the display method is to pass red, green and blue.
  • the color filter is attached to the substrate, and the white light emitted by the white organic light emitting diode passes through the color filters of red, green and blue respectively to obtain red, yellow and blue primary colors.
  • the manufacturing process of the display structure can reduce the difficulty of the OLED evaporation process and improve the yield of the large-size OLED display, in this structure, the CF makes the thickness of the overall display thick and cannot be bent, which limits the application range thereof.
  • the technical problem to be solved by the present invention is to provide a display which can simultaneously achieve a thin and bendable shape in view of the defects of the prior art.
  • a further technical problem to be solved by the present invention is to provide a manufacturing method capable of overcoming the difficulty of alignment of a large-sized OLED display panel in an evaporation process, and capable of manufacturing a large-sized OLED display or a high-resolution display.
  • a display comprising a WOLED device, on which at least one first inorganic film layer covering the WOLED device is deposited, the designated pixel defining layer on the first inorganic film layer corresponding to the WOLED device is provided with red light a color resist, a green color resist, and a blue color resist, wherein the first inorganic film layer is deposited with at least one second inorganic film layer, the second inorganic film layer covering the red color resist, green An optical color resist and a blue color resist and the first inorganic film layer.
  • the first inorganic film layer has a thickness of 500 to 2000 nm.
  • the first inorganic film layer is provided with at least two layers, which are sequentially deposited on the WOLED device, and at least two layers of the first inorganic film layer have a total thickness of ⁇ 2000 nm.
  • the red color photoresist, the green color photoresist, and the blue color photoresist are respectively sprayed and hardened on the white light pixel defining layer of the WOLED device.
  • the thicknesses of the red color photoresist, the green color photoresist, and the blue color photoresist are each 50-3000 nm.
  • the first inorganic film layer and the second inorganic film layer are each made of at least one of SiNx, SiON, SiOx, or Al 2 O 3 .
  • the second inorganic film layer of a single layer has a thickness of 500 to 2000 nm.
  • the second inorganic film layer is provided with at least two layers, and at least two layers of the second inorganic film layer are sequentially deposited on the first inorganic film layer, and the cover is closed to the red light.
  • Color resist, green color resist and blue color resist are sequentially deposited on the first inorganic film layer, and the cover is closed to the red light.
  • the pixel defining layer of the WOLED device is further provided with a black photoresist.
  • a method of manufacturing a display comprising the steps of:
  • step S3 if necessary, repeating step S2, depositing a first inorganic film layer again until the required thickness of the first inorganic film layer is reached;
  • step S6 If necessary, repeat step S5 to deposit a second inorganic film layer until the desired thickness of the second inorganic film layer is reached to obtain a final display.
  • step S1 the following sub-steps are included:
  • step S2 the following sub-steps are included:
  • step S22 the gas produced in step S21 is introduced into the reaction chamber of the chemical vapor deposition apparatus;
  • the gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the WOLED device to form a first inorganic film.
  • step S4 the following sub-steps are included:
  • step S5 the following sub-steps are included:
  • step S52 the gas produced in step S51 is introduced into the reaction chamber of the chemical vapor deposition apparatus;
  • the gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the red color resist, the green color resist and the blue color resist, and the first inorganic A second inorganic film is formed on the film layer.
  • the display of the invention can be used to improve the flexible or hard-plate OLED display.
  • the full-color display can be realized by using the WOLED+ color photoresist filling method, and at the same time, the thin and bendable can be achieved.
  • red color resist, green color resist and blue color photoresist replace the organic layer in the current thin film package, which can be used as a stress interrupting layer, reduce the thickness of the thin film package, improve the flexible bending characteristics, and can also be used as a flat layer to realize the device.
  • the first inorganic film layer and the second inorganic film layer can serve as a water blocking layer and a buffer layer to protect the WOLED, the red color photoresist, the green color photoresist, and the blue color photoresist.
  • the evaporation process is only used in the fabrication of the WOLED device, and the FMM Mask (high-precision evaporation mask) is not required in the evaporation process of the WOLED device, only the CMM is adopted.
  • Mask conventional vapor deposition mask
  • Mask can effectively improve the alignment yield compared with the manufacture of RGB three-pixel display. It solves the manufacturing method of RGB three-pixel display, and has higher requirements on alignment accuracy and difficulty of OLED evaporation process.
  • the problem that the process yield of large-size OLED displays has not been improved has been able to produce large-size OLED displays or high-resolution displays.
  • the structure of the present invention utilizes the WOLED+ color photoresist filling method to realize full color display, it is not necessary to separately provide a color filter in manufacturing, and a new thin and bendable display can be produced.
  • 1 is a schematic structural view of a 1W OLED according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a display according to Embodiment 1 of the present invention.
  • FIG. 3 is a flow chart showing a method of manufacturing a display according to Embodiment 2 of the present invention.
  • Embodiment 1 as shown in FIG. 1-2, a display including a WOLED device 100, on which at least one first inorganic film layer 200 covering the WOLED device 100 is deposited on the WOLED device 100, the first inorganic film layer 200 A red color color resist 300, a green color resist 400, and a blue color resist 500 are disposed in a specified pixel defining layer of the corresponding WOLED device 100, and at least one second inorganic film is deposited on the first inorganic film layer 200.
  • the layer 700, the second inorganic film layer 700 covers the red color photoresist 300, the green color photoresist 400 and the blue color photoresist 500, and the first inorganic film layer 200.
  • the WOLED device 100 is the basic structure of the present invention, and generally includes an anode 101 , a pixel defining layer 102 , an organic light emitting layer 103 , a cathode 104 , and a photolithography layer 105 .
  • the WOLED device 100 can realize white light emission.
  • the WOLED structure can adopt the structure of the prior art, and the above is only a WOLED.
  • the structure is described as an example, and the present invention is not limited, and the corresponding structures in the prior art are applicable to the present invention.
  • the WOLED device 100 Since the WOLED device 100 is very sensitive to water vapor and oxygen, the organic light-emitting material and the active metal cathode are easily reacted with water vapor and oxygen to damage the device. Therefore, on the basis of the structure of the WOLED device 100, at least one layer is deposited.
  • An inorganic film layer 200 is used for packaging, and the first inorganic film layer 200 covers the entire surface of the WOLED device 100.
  • the first inorganic film layer 200 functions as a water blocking layer and a buffer layer to protect the WOLED device 100 device. Avoid possible damage to the OLED device by the subsequent color photoresist process.
  • the first inorganic film layer 200 not only satisfies the requirements of folding and bending, but also ensures that the effective use of the material can be ensured when a large bending deformation occurs, that is, it must have sufficient flexibility to achieve effective use. Insulates moisture and oxygen.
  • the performance of the first inorganic film layer 200 can be regulated by changing the material of the first inorganic film layer 200 and the number of layers of the inorganic film layer.
  • the first inorganic film layer 200 serves as a barrier to water and oxygen diffusion, and it is generally required that such a first inorganic film layer 200 has almost no defects such as pinholes and grain boundaries, so that the sealing property is better.
  • the film made of the inorganic dielectric material inevitably has some defects, and if the thickness of the organic layer is smaller than the average length of the pinhole defect in the first inorganic film layer 200, the external water vapor can still pass through the needle. The channel formed by the pore penetrates into the inside of the package. Therefore, it is very important to select the material for manufacturing the first inorganic film layer 200.
  • the first inorganic film layer 200 is made of silicon nitride (SiNx) or silicon oxynitride (SiON). At least one of silicon oxide (SiOx) or aluminum oxide (Al 2 O 3 ).
  • SiNx silicon nitride
  • SiON silicon oxynitride
  • the above materials have excellent transparency and barrier properties, and due to the high density of these materials, excessive defects or penetration of the film can be avoided.
  • the deposited first inorganic film layer 200 may be one layer or multiple layers, and the single-layer first inorganic film layer 200 can satisfy the basic requirements of package performance.
  • the performance of the first inorganic film layer 200 can be greatly improved. Therefore, it is preferable that the first inorganic film layer 200 is provided with at least two layers, which are sequentially deposited on the WOLED device 100. On the top, 2-4 layers are generally deposited, which can meet the protection requirements of water blocking and buffering of OLED devices.
  • the material properties of the first inorganic film layer 200 are different, if the plurality of first inorganic film layers 200 are made of different materials, the performance of the first inorganic film layer 200 is improved and balanced, and the water vapor is lowered.
  • the permeability also increases flexibility. Therefore, the first inorganic film layer 200 of at least two layers of the present invention is made of different materials, for example, the first layer is made of SiNx, and the second layer is made of Al 2 O 3 .
  • the thickness of the first inorganic film layer 200 of a single layer is 500-2000 nm, and the thickness in this range is applicable to the present invention, and 500 nm, 1000 nm, 1500 nm, and 2000 nm may be selected. This thickness provides both protection and minimizes the thickness of the entire device.
  • each layer has a thickness of ⁇ 2000 nm such that the total thickness of the layers is ⁇ 2000 nm.
  • the red color photoresist 300, the green color photoresist 400, and the blue color photoresist 500 are respectively sprayed and hardened in the white light pixel defining layer of the WOLED device 100.
  • the organic light emitting layer emits white light, and corresponding to different regions of the white light pixel defining layer, a red color resist 300, a green color resist 400, and a blue color resist 500 are respectively disposed to form a color.
  • the structure, shape, number and arrangement of the red color resist 300, the green color resist 400 and the blue color resist 500 are not particularly required, and all the structures and shapes to which the present invention is applied are within the scope of the present invention.
  • the thickness of the red color photoresist 300, the green color photoresist 400, and the blue color photoresist 500 are each 50-3000 nm.
  • the thickness is arbitrarily selected within the above range, and for example, a red color resist 300, a green color resist 400, and a blue color resist which are 50 nm, 200 nm, 500 nm, 1000 nm, 1500 nm, 1800 nm, 2300 nm, 2600 nm or 3000 nm thickness, respectively, may be selected.
  • 500, the thickness can be the same or different between the three.
  • the second inorganic film layer 700 is made of at least one of SiNx, SiON, SiOx or Al 2 O 3 .
  • the second inorganic film layer 700 of a single layer has a thickness of 500 to 2000 nm.
  • the second inorganic film layer 700 is provided with at least two layers, and the second inorganic film layer of at least two layers has a total thickness of ⁇ 2000 nm, is sequentially deposited on the first inorganic film layer 200, and covers the closed red light color resist 300, green. The light color resist 400 and the blue color resist 500.
  • the red color resist 300, the green color resist 400, and the blue color resist 500 are enclosed in the first inorganic film layer 200 and the second inorganic film layer.
  • the function of the second inorganic film layer 700 is also water blocking, protecting the red color photoresist 300, the green color photoresist 400 and the blue color photoresist 500, and the material selection and the number of structural layers are selected.
  • An inorganic film layer 200 is the same and will not be described herein.
  • a black photoresist may be disposed on the pixel defining layer of the WOLED device 100.
  • Embodiment 2 the display manufacturing method of the present invention is:
  • Step S1 manufacturing a WOLED device:
  • the TFT film layer includes a TFT region formed. In the TFT region, an active region, a gate electrode, a source electrode, and a drain electrode are formed.
  • the TFT region includes a formed gate, an active region, a source region, and a drain region.
  • a thickness of 100 nm to 150 nm can be deposited on the active region by chemical vapor deposition.
  • the gate insulating layer, the material of the gate insulating layer may be, but not limited to, silicon dioxide or silicon nitride.
  • a gate electrode is formed on the substrate on which the gate insulating layer is formed by a deposition process and a patterning process. The gate is located on the gate insulating layer of the active region. After the gate is formed, a doping process is performed to form the active region, the active layer, and the drain region.
  • a pixel electrode film layer is formed by a deposition process, and then an anode is formed on the pixel electrode film layer based on a patterning process, thereby forming an array substrate including the anode array.
  • the substrate may be, but is not limited to, a substrate of any form, such as a transparent substrate, a ceramic substrate, or a metal substrate, which is not limited in the technical solution presented in the embodiments of the present invention.
  • a transparent organic thin film layer and a reflective metal thin film are sequentially deposited.
  • the material of the transparent organic film layer may be, but not limited to, an acrylic material or an organic resin material.
  • the thickness of the deposited transparent organic film layer may be between 1 ⁇ m and 2.5 ⁇ m, preferably, but not limited to, 1.5 ⁇ m or 2 ⁇ m.
  • the material of the deposited reflective metal film may be a metal film layer having a light reflectance of more than 80% and a thickness of 80 nm to 500 nm.
  • the metal film layer may be, but not limited to, a metal aluminum film layer or a metal silver film layer.
  • the material of the deposited reflective metal film is a metal silver film layer having a high light reflectivity.
  • the deposited reflective metal film can be masked, exposed, developed, photolithographically, etched, etc. to remove the reflective metal film located above the anode electrode.
  • the process of this step is a conventional technique and will not be described herein.
  • the transparent organic film directly above the anode electrode may be removed by dry etching to expose the anode electrode to form a pixel defining layer having a pixel definition pattern.
  • the corresponding process can be performed using a mask having the same pattern.
  • a mask having the same pattern may be used, and the transparent organic film and the reflective metal film are patterned together to expose the anode electrode to form a pixel definition.
  • the pixel definition layer of the pattern Or the array substrate after the transparent organic film and the reflective metal film are sequentially deposited, and the same reflective mask is used to pattern the deposited reflective metal film and the transparent organic film, respectively, and the anode electrode is leaked to form a pixel-defined pattern. Pixel definition layer.
  • Step S14 sequentially depositing an organic light-emitting layer and a cathode on the array substrate on which the pixel defining layer having the pixel defining pattern is formed.
  • a hole transport layer, an organic light emitting layer, an electron transport layer, and a WOLED top electrode are sequentially formed on the array substrate on which the pixel defining layer having the pixel defining pattern is formed by a thin film deposition process to form a WOLED device.
  • the above steps are merely illustrative of the manufacturing steps of the WOLED device of the present invention, and do not limit the present invention. All the steps that can be used to fabricate the WOLED device are applicable to the present invention.
  • the manufacturing steps of the WOLED device of the present invention do not require the use of FMM during the evaporation process.
  • Mask high-precision evaporation mask
  • CMM Mask conventional evaporation mask
  • the process alignment accuracy and difficulty are relatively high, which causes the problem that the large-size OLED display process yield cannot be improved.
  • Step S2 depositing a first inorganic film layer on the WOLED device by chemical vapor deposition, including the following substeps:
  • one or more of the raw materials SiNx, SiON, SiOx, and Al2O3 are selected as needed, and an appropriate amount of the raw materials is taken, heated in an evaporator, and gasified at 500-1000 ° C to prepare a gas required for the process;
  • the evaporator has a gasification temperature of 800-1000 ° C under normal pressure, a negative pressure of the evaporator (10 Kpa), and a gasification temperature of 500-800 ° C.
  • Al 2 O 3 is selected as the raw material.
  • the evaporator is heated to 1000 ° C.
  • the gas is compressed by a negative pressure, the evaporator is first evacuated to 10 KPa and the heating temperature is 500 ° C.
  • the prepared gas is introduced into the reaction chamber of the chemical vapor deposition apparatus through a conveying pipe, and the control gas flow rate is 10 m/s;
  • the gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the WOLED device to form a first inorganic film.
  • Step S3 repeating step S2, depositing a first inorganic film layer again until the required thickness of the first inorganic film layer is reached;
  • Step S4 using a spraying device to fabricate the color photoresist by spraying, respectively spraying different color photoresist materials into a specified pixel defining layer of the WOLED device, and then hardening them to form a red color photoresist and a green light respectively.
  • Color photoresist and blue color photoresist including the following sub-steps:
  • the above-mentioned heating or UV hardening means is a conventional technique, and the present invention can be directly subjected to a hardening treatment by a conventional technique.
  • Step S5 depositing a second inorganic film layer on the first inorganic film layer and the red color resist, the green color resist, and the blue color resist by chemical vapor deposition, and specifically includes the following substeps:
  • step S52 the gas produced in step S51 is introduced into the reaction chamber of the chemical vapor deposition apparatus;
  • the gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the WOLED device to form a second inorganic film;
  • the above step of depositing the second inorganic film layer is the same as the step of depositing the first inorganic film layer, and the above steps can be directly referred to.
  • Step S6 Step S5 is repeated to deposit a second inorganic film layer again until the desired thickness of the second inorganic film layer is reached to obtain a final display.

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Abstract

一种显示器和显示器的制造方法，显示器包括WOLED器件(100)，在WOLED器件(100)上沉积第一无机膜层(200)，第一无机膜层(200)上对应WOLED器件(100)的指定像素定义层设有红光彩色光阻(300)、绿光彩色光阻(400)和蓝光彩色光阻(500)，第一无机膜层(200)外沉积第二无机膜层(700)，第二无机膜层(700)覆盖红光彩色光阻(300)、绿光彩色光阻(400)和蓝光彩色光阻(500)及第一无机膜层(200)。制造方法：制造WOLED器件(100)；WOLED器件(100)上沉积一层第一无机膜层(200)；再次沉积一层第二无机膜层(700)；将红光彩色光阻(300)、绿光彩色光阻(400)和蓝光彩色光阻(500)喷涂至指定像素内，将其硬化；在第一无机膜层(200)、红光彩色光阻(300)、绿光彩色光阻(400)和蓝光彩色光阻(500)外沉积一层第二无机膜层(700)。显示器轻薄可弯折；制造方法降低了大尺寸OLED显示屏在蒸镀工艺中对位难度。

Description

一种显示器及其显示器制造方法 技术领域
本发明属于显示技术领域，涉及一种显示器及其显示器制造方法。
 背景技术
有机发光二极管OLED （Organic Light-Emitting Diode）是一种最新的显示技术，具有优异的显示性能，目前，OLED显示器通常皆采用著RGB三像素显示结构，这种OLED 显示器的制程方法要求OLED蒸镀工艺对位精度难度相对较高，因此，造成大尺寸OLED显示屏工艺良率一直无法提升。
另外一种实现OLED显示器全彩化的方式是采取WOLED+CF的结构，即采用白色有机发光二极管（WOLED）与彩色滤光层（CF）配合结构，该显示方法是通过将红色、绿色和蓝色的彩色滤光片贴附在基板上，白色有机发光二极管发射的白光通过分别通过红色、绿色和蓝色的彩色滤光片，得到红黄蓝三原色光。虽然此显示结构的制备工艺可以降低OLED蒸镀工艺难度，提升大尺寸OLED显示屏良率，但此结构中，CF使得整体显示屏厚度变厚且不能弯折，限制了其应用范围。
 技术问题
有机发光二极管OLED （Organic Light-Emitting Diode）是一种最新的显示技术，具有优异的显示性能，目前，OLED显示器通常皆采用著RGB三像素显示结构，这种OLED 显示器的制程方法要求OLED蒸镀工艺对位精度难度相对较高，因此，造成大尺寸OLED显示屏工艺良率一直无法提升。
另外一种实现OLED显示器全彩化的方式是采取WOLED+CF的结构，即采用白色有机发光二极管（WOLED）与彩色滤光层（CF）配合结构，该显示方法是通过将红色、绿色和蓝色的彩色滤光片贴附在基板上，白色有机发光二极管发射的白光通过分别通过红色、绿色和蓝色的彩色滤光片，得到红黄蓝三原色光。虽然此显示结构的制备工艺可以降低OLED蒸镀工艺难度，提升大尺寸OLED显示屏良率，但此结构中，CF使得整体显示屏厚度变厚且不能弯折，限制了其应用范围。
 技术解决方案
本发明要解决的技术问题在于，针对现有技术的缺陷，提供一种同时能达到轻薄又可弯折的显示器。
本发明进一步要解决的技术问题是提供一种克服大尺寸OLED显示屏在蒸镀工艺中对位难度，可以制造大尺寸OLED显示屏或高解析显示屏的制造方法。
本发明解决其技术问题所采用的技术方案是：
一种显示器，包括WOLED器件，在所述WOLED器件上沉积至少一层覆盖所述WOLED器件的第一无机膜层，所述第一无机膜层上对应WOLED器件的指定像素定义层设有红光彩色光阻、绿光彩色光阻和蓝光彩色光阻，所述第一无机膜层外沉积至少一层第二无机膜层，所述第二无机膜层覆盖所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻以及所述第一无机膜层。   
进一步地，所述的显示器中，优选单层所述第一无机膜层厚度为500-2000nm。
进一步地，所述的显示器中，优选所述第一无机膜层设置至少两层，依次沉积在所述WOLED器件上，至少两层的第一无机膜层总厚度≤2000nm。
进一步地，所述的显示器中，优选所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻分别通过喷涂及硬化于WOLED器件的白光像素定义层。
进一步地，所述的显示器中，优选所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻的厚度都分别各自为50-3000nm。
进一步地，所述的显示器中，优选第一无机膜层以及所述第二无机膜层均采用SiNx、SiON、SiOx或Al 2O 3中的至少一种制成。
进一步地，所述的显示器中，优选单层的所述第二无机膜层厚度为500-2000nm。
进一步地，所述的显示器中，优选所述第二无机膜层设置至少两层，至少两层的所述第二无机膜层依次沉积在第一无机膜层上，并覆盖封闭所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻。
进一步地，所述的显示器中，优选所述在WOLED器件的像素定义层还设有黑色光阻。
一种显示器的制造方法，包括以下步骤：
S1、制造WOLED器件；
S2、采用化学气相沉积法在WOLED器件上沉积一层第一无机膜层；
S3、如有需要重复步骤S2，再次沉积一层第一无机膜层，直至达到需要的第一无机膜层厚度；
S4、利用喷涂方式，分别将不同的彩光光阻原料喷涂至WOLED器件的指定像素内，再将其硬化分别形成红光彩色光阻、绿光彩色光阻和蓝光彩色光阻；
S5、采用化学气相沉积法在第一无机膜层和红光彩色光阻、绿光彩色光阻和蓝光彩色光阻外沉积一层第二无机膜层；
S6、如有需要重复步骤S5，再次沉积一层第二无机膜层，直至达到需要的第二无机膜层厚度，得到最终的显示器。
进一步地，所述的显示器制造方法中，优选所述步骤S1中，包括以下子步骤：
S11、在阵列基板上依次沉积透明有机薄膜和反射金属薄膜；
S12、图案化所述反射金属薄膜，去除所述阳极电极上方的金属薄膜；     S13、以所述图案化后的金属薄膜为掩膜刻蚀所述透明有机薄膜，暴露出所述阳极电极，形成具有像素定义图案的像素定义层；     S14、在形成像素定义层的阵列基板上依次蒸镀有机发光层和阴极。
进一步地，所述的显示器制造方法中，优选所述步骤S2中，包括以下子步骤：
S21、取原料SiNx、SiON、SiOx或Al2O3，对原料进行气化处理，制成制程所需气体；
S22、将步骤 S21制成的气体通入化学气相沉积设备的反应腔；
S23、反应腔中通入的气体在电场或微波作用下，产生等离子体，等离子体轰击并沉积于WOLED器件上形成第一无机膜。
进一步地，所述的显示器制造方法中，优选所述步骤S4中，包括以下子步骤：
S41、红色发光光阻的制造：将红色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化；
S42、绿色发光光阻的制造：将绿色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化；
S43、蓝色发光光阻的制造：将蓝色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化。
进一步地，所述的显示器制造方法中，优选所述步骤S5中，包括以下子步骤：
S51、取原料SiNx、SiON、SiOx或Al2O3，对原料进行气化处理，制成制程所需气体；
S52、将步骤 S51制成的气体通入化学气相沉积设备的反应腔；
S53、反应腔中通入的气体在电场或微波作用下，产生等离子体，等离子体轰击并沉积于所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻以及所述第一无机膜层上形成第二无机膜。
本发明的显示器可以用于改进柔性或硬板OLED显示器，用于柔性OLED显示器时，在利用WOLED+彩色光阻填补方式实现显示屏全彩化，同时能达到轻薄又可弯折。其中红光彩色光阻、绿光彩色光阻和蓝光彩色光阻取代目前薄膜封装中的有机层，可当应力中断层，降低薄膜封装厚度，提升柔性弯折特性，另外可以作为平坦层实现器件的平坦。第一无机膜层和第二无机膜层可以作为阻水层和缓冲层，实现对WOLED、红光彩色光阻、绿光彩色光阻和蓝光彩色光阻的防护。
 有益效果
本发明的制造方法中，由于只在WOLED器件制造中采用蒸镀工艺，且WOLED器件蒸镀过程中不需使用FMM Mask（高精度蒸镀掩模板），而只需采取CMM Mask（常规蒸镀掩模板），相比RGB三像素显示器的制造可以有效提升对位良率，解决了RGB三像素显示器的制造方法中，对OLED蒸镀工艺对位精度和难度要求较高、造成大尺寸OLED显示屏工艺良率一直就无法提升的问题，可以制造大尺寸OLED显示屏或高解析显示屏。另外，由于本发明的结构是利用WOLED+彩色光阻填补方式实现显示屏全彩化，那么在制造中无需另设彩色滤光片，可以制出轻薄、可弯折的新型显示器。
 附图说明
下面将结合附图及实施例对本发明作进一步说明，附图中：
图1是本发明实施例1WOLED的结构示意图；
图2是本发明实施例1显示器的结构示意图。
图3是本发明实施例2显示器制造方法流程框图。
 本发明的最佳实施方式
为了对本发明的技术特征、目的和效果有更加清楚的理解，现对照附图详细说明本发明的具体实施方式。
实施例1，如图1-2所示，一种显示器，包括WOLED器件100，在WOLED器件100上沉积至少一层覆盖WOLED器件100的第一无机膜层200，所述第一无机膜层200上对应WOLED器件100的指定像素定义层内设有红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500，所述第一无机膜层200外沉积至少一层第二无机膜层700，所述第二无机膜层700覆盖红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500以及第一无机膜层200。   
其中，如图1所示，WOLED器件100是本发明的基础结构，一般包括阳极101、像素定义层102、有机发光层103、阴极104和光粹取层105，WOLED器件100能实现发射白光。WOLED结构可采用现有技术的结构，以上只是以一种WOLED 的结构为例进行说明，并不能限定本发明，现有技术中相应的结构都适用本发明。
由于WOLED器件100对于水汽、氧气非常敏感，其有机发光材料和活泼金属阴极都很容易和水汽、氧气发生反应而使器件遭到损坏，因此需要WOLED器件100结构的基础上，沉积至少一层第一无机膜层200用于封装，第一无机膜层200将整个WOLED器件100器件表面覆盖，第一无机膜层200主要功能是作为阻水层和缓冲层，实现对WOLED器件100器件的防护，避免後续彩色光阻制程工艺对OLED器件可能产生的破坏。同时，由于用于柔性显示器中，第一无机膜层200不仅仅是满足折叠、弯曲的要求，还得确保发生很大弯曲变形时仍然可以保证材料的有效使用，即必须具有足够的柔性实现有效隔绝湿气和氧气。
由于第一无机膜层200的性能可通过改变第一无机膜层200的材料和无机物膜层的层数加以调控。
第一无机膜层200作为阻挡水和氧扩散的屏障，一般要求这种第一无机膜层200内几乎没有针孔和晶粒边界等缺陷，这样才能使密封性更好。但实际制备工艺中无机介质材料制成的薄膜里难免会有一些缺陷，而这时如果有机层的厚度小于第一无机膜层200中针孔缺陷的平均长度时，外界的水汽还是能够通过针孔形成的通道渗透到封装体的内部，因此，在选择制造第一无机膜层200的材料是非常重要的，优选第一无机膜层200采用氮化硅（SiNx）、氮氧化硅（SiON）、氧化硅（SiOx）或三氧化二铝（Al 2O 3）这些材料中的至少一种制成。上述材料具有优良的透明性和阻隔性能，并且由于这些材料的密度较高，可以避免了薄膜出现过多的缺陷或穿透现象。
沉积的第一无机膜层200可以是一层，也可以是多层，单层第一无机膜层200可以满足封装性能的基本需求。在采用多层第一无机膜层200的结构时，第一无机膜层200的性能可以获得极大的提升，因此优选所述第一无机膜层200设置至少两层，依次沉积在WOLED器件100上，一般沉积2-4层，即可满足OLED器件阻水、缓冲等防护需要。再者，由于制造第一无机膜层200的材料性能上偏重不同，如果多层第一无机膜层200采用不同的材料，会提高和均衡整体的第一无机膜层200的性能，既降低水汽的渗透率，同时也提高柔韧性。因此，本发明至少两层的第一无机膜层200采用不同材料，例如：第一层采用SiNx，第二层则采用Al 2O 3。
同时，也是为了实现上述防护需要，单层的所述第一无机膜层200厚度为500-2000nm，在这个范围内的厚度都适用本发明，可以选择500nm、1000nm、1500nm、2000nm。这个厚度既能起到防护的需要，也能尽可能减少整个器件的厚度。在沉积两层或两层以上的第一无机膜层200，每层的厚度都＜2000nm，使得多层的总厚度≤2000nm。
进一步地，所述的显示器中，优选所述红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500分别喷涂及硬化于WOLED器件100的白光像素定义层内。在WOLED器件100中，有机发光层发射白光，对应白光像素定义层的不同区域，分别设置红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500，以形成彩色。红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500的结构、形状、数量以及排布并无特殊要求，适用本发明的所有结构和形状，都属于本发明的保护范围。
所述红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500的厚度分别都为50-3000nm。厚度在上述范围内任意选择，例如可以分别选择是50nm、200nm、500nm、1000nm、1500nm、1800nm、2300nm、2600nm或3000nm厚度的红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500，三者之间相比，厚度可以相同，也可以不同。
进一步地，所述的显示器中，优选所述第二无机膜层700采用SiNx、SiON、SiOx或Al 2O 3中的至少一种制成。优选单层的所述第二无机膜层700厚度为500-2000nm。优选所述第二无机膜层700设置至少两层，至少两层的第二无机膜层总厚度≤2000nm，依次沉积在第一无机膜层200上，并覆盖封闭红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500，这个结构中，红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500被封闭在第一无机膜层200与第二无机膜层700之间，第二无机膜层700的功能同样也是阻水，对红光彩色光阻300、绿光彩色光阻400和蓝光彩色光阻500进行防护，其材料选择和结构层数选择跟第一无机膜层200相同，在此不再赘述。
进一步地，所述的显示器中，优选在所述WOLED器件100的像素定义层上还可以设有黑色光阻。
实施例2，本发明显示器制造方法为：
步骤S1：制造WOLED器件：
S11、阵列基板的制造：在基板上上沉积的TFT膜层，以及TFT膜层上沉积的像素电极层。其中，TFT膜层中，包含形成的TFT区域。在TFT区域，形 成有源区、栅电极、源电极以及漏电极。
具体讲，在TFT膜层中，TFT区域包含形成的栅极、有源区、源极区 以及漏极区。可以采用化学汽相沉积法在有源区上沉积厚度为100nm~150nm 的栅绝缘层，栅绝缘层的材料可以但不限于是二氧化硅或者氮化硅等。在形成栅绝缘层之后，通过沉积工艺和构图工艺在形成栅绝缘层的基板上形成栅极。其中栅极位于有源区的栅绝缘层上。形成栅极之后，进行掺杂工艺处理， 以使有源区形成源极区、有源层、漏极区。在TFT膜层上，通过沉积工艺形成像素电极膜层，然后基于构图工艺，在像素电极膜层上形成阳极，从而形成包含阳极阵列的阵列基板。
所述基板可以但不限于是透明基板、陶瓷基板或者金属基板等任一形式的基板，本发明实施例这里提出的技术方案中，对此不作限制。
在形成的包含阳极阵列的阵列基板上，依次沉积透明有机薄膜层和反射金属薄膜。透明有机膜层的材质可以但不限于是亚克力系材料或有机树脂材料。沉积的透明有机膜层的厚度可以在 1μm~2.5μm之间，较佳地，可以但不限于是1.5μm或者2μm。
具体地，沉积的反射金属薄膜的材质可以是光反射率大于80%、厚度为80nm~500nm的金属膜层。该金属膜层可以但不限于是金属铝膜层或者是金 属银膜层。
较佳地，本发明实施例这里提出的技术方案中，沉积的反射金属薄膜的材质是具有较高的光反射率的金属银膜层。
S12、图案化所述反射金属薄膜，去除所述阳极电极上方的金属薄膜。
可以对沉积的反射金属薄膜进行掩膜、曝光、显影、光刻、刻蚀等构图工艺，去掉位于阳极电极上方的反射金属薄膜。该步骤的工艺是常规技术，在此不再赘述。
S13、以所述图案化后的金属薄膜为掩膜刻蚀所述透明有机薄膜，暴露出所述阳极电极，形成具有像素定义图案的像素定义层。
其中，可以采用干法刻蚀去除所述阳极电极正上方的透明有机薄膜，露出 所述阳极电极，形成具有像素定义图案的像素定义层。
进行图案化处理时，可以采用具有同样图案的掩模板进行相应的处理。
具体为：对依次沉积透明有机薄膜和反射金属薄膜之后的阵列基板，还可以采用具有相同图案的掩模板，对透明有机薄膜和反射金属薄膜一起进行图案化，曝露出阳极电极，形成具有像素定义图案的像素定义层。或者是对依次沉积透明有机薄膜和反射金属薄膜之后的阵列基板，采用同一个掩模板，分别对沉积的反射金属薄膜和透明有机薄膜进行图案化处理，暴漏出阳极电极，形成具有像素定义图案的像素定义层。
步骤S14、在形成具有像素定义图案的像素定义层的阵列基板上依次蒸镀有机发光层和阴极。
采用薄膜沉积工艺在形成具有像素定义图案的像素定义层的阵列基板上依次形成空穴传输层、有机发光层、电子传输层、WOLED顶部电极，形成WOLED器件。
上述步骤仅是举例说明本发明WOLED器件的制造步骤，并不能限定本发明，所有可以制造WOLED器件的步骤都适用本发明。本发明WOLED器件的制造步骤在蒸镀过程中不需使用FMM Mask（高精度蒸镀掩模板），而只需采取CMM Mask（常规蒸镀掩模板），可以有效提升对位良率，解决了现有技术RGB三像素显示器的制造方法中，对OLED蒸镀工艺对位精度和难度相对较高、造成大尺寸OLED显示屏工艺良率一直无法提升的问题。
步骤S2：采用化学气相沉积法在WOLED器件上沉积一层第一无机膜层，包括以下子步骤：
S21、气化：取原料SiNx、SiON、SiOx或Al2O3，对原料进行气化处理，制成制程所需气体；
具体地，根据需要选择原料SiNx、SiON、SiOx、Al2O3中的一种或多种，取适量原料，置入蒸发器中加热，在500-1000℃下气化制成制程所需气体；其中，蒸发器常压下气化温度为800-1000℃，蒸发器负压下（10Kpa），气化温度为500-800℃。
本实施例选择Al 2O 3为原料，采用常压气化时，蒸发器加热温度至1000℃，采用负压气化时，蒸发器首先抽真空至10Kpa，加热温度为500℃。
S22、通过输送管将制成的气体通入化学气相沉积设备的反应腔，控制气体流速为10m/s；
S23、反应腔中通入的气体在电场或微波作用下，产生等离子体，等离子体轰击并沉积于WOLED器件上形成第一无机膜。
步骤S3：重复步骤S2，再次沉积一层第一无机膜层，直至达到需要的第一无机膜层厚度；
步骤S4：利用喷涂设备对彩色光阻通过喷涂方式进行制作，分别将不同的彩光光阻原料喷涂至WOLED器件的指定像素定义层内，再将其硬化分别形成红光彩色光阻、绿光彩色光阻和蓝光彩色光阻，具体包括以下子步骤：
S41、红色发光光阻的制造：将红色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化；
S42、绿色发光光阻的制造：将绿色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化；
S43、蓝色发光光阻的制造：将蓝色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化。
上述加热或UV的硬化方式是常规技术，本发明直接可以采用常规技术进行硬化处理。
步骤S5：采用化学气相沉积法在第一无机膜层和红光彩色光阻、绿光彩色光阻和蓝光彩色光阻外沉积一层第二无机膜层，具体包括以下子步骤：
 S51、取原料SiNx、SiON、SiOx或Al 2O 3，对原料进行气化处理，制成制程所需气体；
S52、将步骤 S51制成的气体通入化学气相沉积设备的反应腔；
S53、反应腔中通入的气体在电场或微波作用下，产生等离子体，等离子体轰击并沉积于WOLED器件上形成第二无机膜；
 上述沉积第二无机膜层的步骤与沉积第一无机膜层的步骤相同，可以直接参考上述步骤。
步骤S6：重复步骤S5，再次沉积一层第二无机膜层，直至达到需要的第二无机膜层厚度，得到最终的显示器。
上述工艺条件和工艺参数根据实际操作设定，本发明无需进行限定。

Claims (14)

  1. 一种显示器，包括WOLED器件，其特征在于，在所述WOLED器件上沉积至少一层覆盖所述WOLED器件的第一无机膜层，所述第一无机膜层上对应WOLED器件的指定像素定义层设有红光彩色光阻、绿光彩色光阻和蓝光彩色光阻，所述第一无机膜层外沉积至少一层第二无机膜层，所述第二无机膜层覆盖所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻以及所述第一无机膜层。
  2. 根据权利要求1所述的显示器，其特征在于，单层的所述第一无机膜层厚度为500-2000nm。
  3. 根据权利要求1所述的显示器，其特征在于，所述第一无机膜层设置至少两层，依次沉积在所述WOLED器件上，至少两层的第一无机膜层总厚度≤2000nm。
  4. 根据权利要求1所述的显示器，其特征在于，所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻分别喷涂及硬化于WOLED器件的白光像素定义层。
  5. 根据权利要求1所述的显示器，其特征在于，所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻的厚度都分别各自为50-3000nm。
  6. 根据权利要求1所述的显示器，其特征在于，所述第一无机膜层以及所述第二无机膜层均采用SiNx、SiON、SiOx或Al 2O 3中的至少一种制成。
  7. 根据权利要求1所述的显示器，其特征在于，单层的所述第二无机膜层厚度为500-2000nm。
  8. 根据权利要求1所述的显示器，其特征在于，所述第二无机膜层设置至少两层，至少两层的所述第二无机膜层总厚度≤2000nm，至少两层的所述第二无机膜层依次沉积在第一无机膜层上，并覆盖封闭所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻。
  9. 根据权利要求1所述的显示器，其特征在于，在WOLED器件的像素定义层还设有黑色光阻。
  10. 一种显示器的制造方法，其特征在于，包括以下步骤：
    S1、制造WOLED器件；
    S2、采用化学气相沉积法在WOLED器件上沉积一层第一无机膜层；
    S3、如有需要重复步骤S2，再次沉积一层第一无机膜层，直至达到需要的第一无机膜层厚度；
    S4、利用喷涂方式，分别将不同的彩光光阻原料喷涂至WOLED器件的指定像素内，再将其硬化分别形成红光彩色光阻、绿光彩色光阻和蓝光彩色光阻；
    S5、采用化学气相沉积法在第一无机膜层和红光彩色光阻、绿光彩色光阻和蓝光彩色光阻外沉积一层第二无机膜层；
    S6、如有需要重复步骤S5，再次沉积一层第二无机膜层，直至达到需要的第二无机膜层厚度，得到最终的显示器。
  11. 根据权利要求10所述的显示器制造方法，其特征在于，所述步骤S1中，包括以下子步骤：
    S11、在阵列基板上依次沉积透明有机薄膜和反射金属薄膜； S12、图案化所述反射金属薄膜，去除所述阳极电极上方的金属薄膜； S13、以所述图案化后的金属薄膜为掩膜刻蚀所述透明有机薄膜，暴露出所述阳极电极，形成具有像素定义图案的像素定义层； S14、在形成像素定义层的阵列基板上依次蒸镀有机发光层和阴极。
  12. 根据权利要求10所述的显示器制造方法，其特征在于，所述步骤S2中，包括以下子步骤：
    S21、取原料SiNx、SiON、SiOx或Al 2O 3，对原料进行气化处理，制成制程所需气体；
    S22、将步骤 S21制成的气体通入化学气相沉积设备的反应腔；
    S23、反应腔中通入的气体在电场或微波作用下，产生等离子体，等离子体轰击并沉积于WOLED器件上形成第一无机膜。
  13. 根据权利要求10所述的显示器制造方法，其特征在于，所述步骤S4中，包括以下子步骤：
    S41、红色发光光阻的制造：将红色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化；
    S42、绿色发光光阻的制造：将绿色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化；
    S43、蓝色发光光阻的制造：将蓝色发光颜料喷涂在指定的像素定义层内，采用加热或UV对其进行硬化。
  14. 根据权利要求10所述的显示器制造方法，其特征在于，所述步骤S5中，包括以下子步骤：
    S51、取原料SiNx、SiON、SiOx或Al 2O 3，对原料进行气化处理，制成制程所需气体；
    S52、将步骤 S51制成的气体通入化学气相沉积设备的反应腔；
    S53、反应腔中通入的气体在电场或微波作用下，产生等离子体，等离子体轰击并沉积于所述红光彩色光阻、绿光彩色光阻和蓝光彩色光阻以及所述第一无机膜层上形成第二无机膜。
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