WO2019119235A1

WO2019119235A1 - Display and display manufacturing method thereof

Info

Publication number: WO2019119235A1
Application number: PCT/CN2017/117027
Authority: WO
Inventors: 林茂仲; 赵小虎
Original assignee: 深圳市柔宇科技有限公司
Priority date: 2017-12-18
Filing date: 2017-12-18
Publication date: 2019-06-27
Also published as: CN111295772A

Abstract

A display and a display manufacturing method. The display comprises a WOLED device (100), a first inorganic film layer (200) deposited on the WOLED device (100), a red color photoresist (300), a green color photoresist (400), and a blue color photoresist (500) provided on the first inorganic film layer (200) corresponding to the designated pixel definition layer of the WOLED device (100). A second inorganic film layer (700) is deposited outside the first inorganic film layer (200). The second inorganic film layer (700) covers the red color photoresist (300), the green color photoresist (400), the blue color photoresist (500), and the first inorganic film layer (200). The manufacturing method comprises: fabricating a WOLED device (100); depositing a first inorganic film layer (200) on the WOLED device (100); depositing a second inorganic film layer (700); spraying red color photoresist (300), green color photoresist (400), and blue color photoresist (500) into the designated pixels and hardening the photoresists; performing deposition of a second inorganic film layer (700) outside the first inorganic film layer (200), the red color photoresist (300), the green color photoresist (400), and the blue color photoresist (500). The display is light, thin and malleable, and the manufacturing method reduces the difficulty of aligning a large OLED display during an evaporation process.

Description

Display and display manufacturing method thereof

Technical field

The invention belongs to the technical field of display, and relates to a display and a display manufacturing method thereof.

Background technique

Organic Light Emitting Diode OLED (Organic Light-Emitting Diode) is a new display technology with excellent display performance. At present, OLED displays usually adopt RGB three-pixel display structure. The manufacturing method of this OLED display requires the relative accuracy of the OLED evaporation process. Higher, therefore, the process yield of large-size OLED display has not been improved.

Another way to achieve full colorization of the OLED display is to adopt the structure of WOLED+CF, that is, a white organic light emitting diode (WOLED) and a color filter layer (CF) are used, and the display method is to pass red, green and blue. The color filter is attached to the substrate, and the white light emitted by the white organic light emitting diode passes through the color filters of red, green and blue respectively to obtain red, yellow and blue primary colors. Although the manufacturing process of the display structure can reduce the difficulty of the OLED evaporation process and improve the yield of the large-size OLED display, in this structure, the CF makes the thickness of the overall display thick and cannot be bent, which limits the application range thereof.

technical problem

Technical solution

The technical problem to be solved by the present invention is to provide a display which can simultaneously achieve a thin and bendable shape in view of the defects of the prior art.

A further technical problem to be solved by the present invention is to provide a manufacturing method capable of overcoming the difficulty of alignment of a large-sized OLED display panel in an evaporation process, and capable of manufacturing a large-sized OLED display or a high-resolution display.

The technical solution adopted by the present invention to solve the technical problem thereof is:

A display comprising a WOLED device, on which at least one first inorganic film layer covering the WOLED device is deposited, the designated pixel defining layer on the first inorganic film layer corresponding to the WOLED device is provided with red light a color resist, a green color resist, and a blue color resist, wherein the first inorganic film layer is deposited with at least one second inorganic film layer, the second inorganic film layer covering the red color resist, green An optical color resist and a blue color resist and the first inorganic film layer.

Further, in the display, it is preferable that the first inorganic film layer has a thickness of 500 to 2000 nm.

Further, in the display, preferably, the first inorganic film layer is provided with at least two layers, which are sequentially deposited on the WOLED device, and at least two layers of the first inorganic film layer have a total thickness of ≤2000 nm.

Further, in the display, preferably, the red color photoresist, the green color photoresist, and the blue color photoresist are respectively sprayed and hardened on the white light pixel defining layer of the WOLED device.

Further, in the display, preferably, the thicknesses of the red color photoresist, the green color photoresist, and the blue color photoresist are each 50-3000 nm.

Further, in the display, preferably, the first inorganic film layer and the second inorganic film layer are each made of at least one of SiNx, SiON, SiOx, or Al ₂ O ₃ .

Further, in the display, it is preferable that the second inorganic film layer of a single layer has a thickness of 500 to 2000 nm.

Further, in the display, preferably, the second inorganic film layer is provided with at least two layers, and at least two layers of the second inorganic film layer are sequentially deposited on the first inorganic film layer, and the cover is closed to the red light. Color resist, green color resist and blue color resist.

Further, in the display, preferably, the pixel defining layer of the WOLED device is further provided with a black photoresist.

A method of manufacturing a display, comprising the steps of:

S1, manufacturing a WOLED device;

S2, depositing a first inorganic film layer on the WOLED device by chemical vapor deposition;

S3, if necessary, repeating step S2, depositing a first inorganic film layer again until the required thickness of the first inorganic film layer is reached;

S4, spraying different color photoresist materials into the specified pixels of the WOLED device by using a spraying method, and then hardening them to form a red color resist, a green color resist, and a blue color resist;

S5, depositing a second inorganic film layer on the first inorganic film layer and the red color resist, the green color resist, and the blue color resist by chemical vapor deposition;

S6. If necessary, repeat step S5 to deposit a second inorganic film layer until the desired thickness of the second inorganic film layer is reached to obtain a final display.

Further, in the display manufacturing method, preferably, in the step S1, the following sub-steps are included:

S11, sequentially depositing a transparent organic film and a reflective metal film on the array substrate;

S12, patterning the reflective metal film to remove the metal film above the anode electrode; S13, etching the transparent organic film with the patterned metal film as a mask, exposing the anode electrode, forming a pixel definition layer having a pixel definition pattern; S14. The organic light-emitting layer and the cathode are sequentially deposited on the array substrate on which the pixel defining layer is formed.

Further, in the display manufacturing method, preferably, in the step S2, the following sub-steps are included:

S21, taking raw materials SiNx, SiON, SiOx or Al2O3, gasifying the raw materials to prepare a gas required for the process;

S22, the gas produced in step S21 is introduced into the reaction chamber of the chemical vapor deposition apparatus;

S23. The gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the WOLED device to form a first inorganic film.

Further, in the display manufacturing method, preferably, in the step S4, the following sub-steps are included:

S41. Manufacture of red luminescent photoresist: spraying red luminescent pigment in a specified pixel definition layer, and hardening it by heating or UV;

S42. Manufacture of green luminescent photoresist: spraying green luminescent pigment in a specified pixel defining layer, and hardening it by heating or UV;

S43. Manufacture of blue luminescent photoresist: The blue luminescent pigment is sprayed in a specified pixel defining layer and hardened by heating or UV.

Further, in the display manufacturing method, preferably, in the step S5, the following sub-steps are included:

S51, taking raw materials SiNx, SiON, SiOx or Al2O3, gasifying the raw materials to prepare a gas required for the process;

S52, the gas produced in step S51 is introduced into the reaction chamber of the chemical vapor deposition apparatus;

S53. The gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the red color resist, the green color resist and the blue color resist, and the first inorganic A second inorganic film is formed on the film layer.

The display of the invention can be used to improve the flexible or hard-plate OLED display. When used in a flexible OLED display, the full-color display can be realized by using the WOLED+ color photoresist filling method, and at the same time, the thin and bendable can be achieved. Among them, red color resist, green color resist and blue color photoresist replace the organic layer in the current thin film package, which can be used as a stress interrupting layer, reduce the thickness of the thin film package, improve the flexible bending characteristics, and can also be used as a flat layer to realize the device. Flat. The first inorganic film layer and the second inorganic film layer can serve as a water blocking layer and a buffer layer to protect the WOLED, the red color photoresist, the green color photoresist, and the blue color photoresist.

Beneficial effect

In the manufacturing method of the present invention, since the evaporation process is only used in the fabrication of the WOLED device, and the FMM Mask (high-precision evaporation mask) is not required in the evaporation process of the WOLED device, only the CMM is adopted. Mask (conventional vapor deposition mask) can effectively improve the alignment yield compared with the manufacture of RGB three-pixel display. It solves the manufacturing method of RGB three-pixel display, and has higher requirements on alignment accuracy and difficulty of OLED evaporation process. The problem that the process yield of large-size OLED displays has not been improved has been able to produce large-size OLED displays or high-resolution displays. In addition, since the structure of the present invention utilizes the WOLED+ color photoresist filling method to realize full color display, it is not necessary to separately provide a color filter in manufacturing, and a new thin and bendable display can be produced.

DRAWINGS

The present invention will be further described below in conjunction with the accompanying drawings and embodiments, in which:

1 is a schematic structural view of a 1W OLED according to an embodiment of the present invention;

2 is a schematic structural view of a display according to Embodiment 1 of the present invention.

3 is a flow chart showing a method of manufacturing a display according to Embodiment 2 of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

For a better understanding of the technical features, objects and effects of the present invention, the embodiments of the present invention are described in detail with reference to the accompanying drawings.

Embodiment 1, as shown in FIG. 1-2, a display including a WOLED device 100, on which at least one first inorganic film layer 200 covering the WOLED device 100 is deposited on the WOLED device 100, the first inorganic film layer 200 A red color color resist 300, a green color resist 400, and a blue color resist 500 are disposed in a specified pixel defining layer of the corresponding WOLED device 100, and at least one second inorganic film is deposited on the first inorganic film layer 200. The layer 700, the second inorganic film layer 700 covers the red color photoresist 300, the green color photoresist 400 and the blue color photoresist 500, and the first inorganic film layer 200.

As shown in FIG. 1 , the WOLED device 100 is the basic structure of the present invention, and generally includes an anode 101 , a pixel defining layer 102 , an organic light emitting layer 103 , a cathode 104 , and a photolithography layer 105 . The WOLED device 100 can realize white light emission. The WOLED structure can adopt the structure of the prior art, and the above is only a WOLED. The structure is described as an example, and the present invention is not limited, and the corresponding structures in the prior art are applicable to the present invention.

Since the WOLED device 100 is very sensitive to water vapor and oxygen, the organic light-emitting material and the active metal cathode are easily reacted with water vapor and oxygen to damage the device. Therefore, on the basis of the structure of the WOLED device 100, at least one layer is deposited. An inorganic film layer 200 is used for packaging, and the first inorganic film layer 200 covers the entire surface of the WOLED device 100. The first inorganic film layer 200 functions as a water blocking layer and a buffer layer to protect the WOLED device 100 device. Avoid possible damage to the OLED device by the subsequent color photoresist process. At the same time, since it is used in a flexible display, the first inorganic film layer 200 not only satisfies the requirements of folding and bending, but also ensures that the effective use of the material can be ensured when a large bending deformation occurs, that is, it must have sufficient flexibility to achieve effective use. Insulates moisture and oxygen.

Since the performance of the first inorganic film layer 200 can be regulated by changing the material of the first inorganic film layer 200 and the number of layers of the inorganic film layer.

The first inorganic film layer 200 serves as a barrier to water and oxygen diffusion, and it is generally required that such a first inorganic film layer 200 has almost no defects such as pinholes and grain boundaries, so that the sealing property is better. However, in the actual preparation process, the film made of the inorganic dielectric material inevitably has some defects, and if the thickness of the organic layer is smaller than the average length of the pinhole defect in the first inorganic film layer 200, the external water vapor can still pass through the needle. The channel formed by the pore penetrates into the inside of the package. Therefore, it is very important to select the material for manufacturing the first inorganic film layer 200. Preferably, the first inorganic film layer 200 is made of silicon nitride (SiNx) or silicon oxynitride (SiON). At least one of silicon oxide (SiOx) or aluminum oxide (Al ₂ O ₃ ). The above materials have excellent transparency and barrier properties, and due to the high density of these materials, excessive defects or penetration of the film can be avoided.

The deposited first inorganic film layer 200 may be one layer or multiple layers, and the single-layer first inorganic film layer 200 can satisfy the basic requirements of package performance. When the structure of the first inorganic film layer 200 is employed, the performance of the first inorganic film layer 200 can be greatly improved. Therefore, it is preferable that the first inorganic film layer 200 is provided with at least two layers, which are sequentially deposited on the WOLED device 100. On the top, 2-4 layers are generally deposited, which can meet the protection requirements of water blocking and buffering of OLED devices. Furthermore, since the material properties of the first inorganic film layer 200 are different, if the plurality of first inorganic film layers 200 are made of different materials, the performance of the first inorganic film layer 200 is improved and balanced, and the water vapor is lowered. The permeability also increases flexibility. Therefore, the first inorganic film layer 200 of at least two layers of the present invention is made of different materials, for example, the first layer is made of SiNx, and the second layer is made of Al ₂ O ₃ .

At the same time, in order to achieve the above protective requirements, the thickness of the first inorganic film layer 200 of a single layer is 500-2000 nm, and the thickness in this range is applicable to the present invention, and 500 nm, 1000 nm, 1500 nm, and 2000 nm may be selected. This thickness provides both protection and minimizes the thickness of the entire device. In depositing two or more layers of the first inorganic film layer 200, each layer has a thickness of <2000 nm such that the total thickness of the layers is ≤2000 nm.

Further, in the display, preferably, the red color photoresist 300, the green color photoresist 400, and the blue color photoresist 500 are respectively sprayed and hardened in the white light pixel defining layer of the WOLED device 100. In the WOLED device 100, the organic light emitting layer emits white light, and corresponding to different regions of the white light pixel defining layer, a red color resist 300, a green color resist 400, and a blue color resist 500 are respectively disposed to form a color. The structure, shape, number and arrangement of the red color resist 300, the green color resist 400 and the blue color resist 500 are not particularly required, and all the structures and shapes to which the present invention is applied are within the scope of the present invention.

The thickness of the red color photoresist 300, the green color photoresist 400, and the blue color photoresist 500 are each 50-3000 nm. The thickness is arbitrarily selected within the above range, and for example, a red color resist 300, a green color resist 400, and a blue color resist which are 50 nm, 200 nm, 500 nm, 1000 nm, 1500 nm, 1800 nm, 2300 nm, 2600 nm or 3000 nm thickness, respectively, may be selected. 500, the thickness can be the same or different between the three.

Further, in the display, preferably, the second inorganic film layer 700 is made of at least one of SiNx, SiON, SiOx or Al ₂ O ₃ . Preferably, the second inorganic film layer 700 of a single layer has a thickness of 500 to 2000 nm. Preferably, the second inorganic film layer 700 is provided with at least two layers, and the second inorganic film layer of at least two layers has a total thickness of ≤2000 nm, is sequentially deposited on the first inorganic film layer 200, and covers the closed red light color resist 300, green. The light color resist 400 and the blue color resist 500. In this structure, the red color resist 300, the green color resist 400, and the blue color resist 500 are enclosed in the first inorganic film layer 200 and the second inorganic film layer. Between 700, the function of the second inorganic film layer 700 is also water blocking, protecting the red color photoresist 300, the green color photoresist 400 and the blue color photoresist 500, and the material selection and the number of structural layers are selected. An inorganic film layer 200 is the same and will not be described herein.

Further, in the display, preferably, a black photoresist may be disposed on the pixel defining layer of the WOLED device 100.

Embodiment 2, the display manufacturing method of the present invention is:

Step S1: manufacturing a WOLED device:

S11. Manufacture of an array substrate: a TFT film layer deposited on the substrate, and a pixel electrode layer deposited on the TFT film layer. Among them, the TFT film layer includes a TFT region formed. In the TFT region, an active region, a gate electrode, a source electrode, and a drain electrode are formed.

Specifically, in the TFT film layer, the TFT region includes a formed gate, an active region, a source region, and a drain region. A thickness of 100 nm to 150 nm can be deposited on the active region by chemical vapor deposition. The gate insulating layer, the material of the gate insulating layer may be, but not limited to, silicon dioxide or silicon nitride. After the gate insulating layer is formed, a gate electrode is formed on the substrate on which the gate insulating layer is formed by a deposition process and a patterning process. The gate is located on the gate insulating layer of the active region. After the gate is formed, a doping process is performed to form the active region, the active layer, and the drain region. On the TFT film layer, a pixel electrode film layer is formed by a deposition process, and then an anode is formed on the pixel electrode film layer based on a patterning process, thereby forming an array substrate including the anode array.

The substrate may be, but is not limited to, a substrate of any form, such as a transparent substrate, a ceramic substrate, or a metal substrate, which is not limited in the technical solution presented in the embodiments of the present invention.

On the formed array substrate including the anode array, a transparent organic thin film layer and a reflective metal thin film are sequentially deposited. The material of the transparent organic film layer may be, but not limited to, an acrylic material or an organic resin material. The thickness of the deposited transparent organic film layer may be between 1 μm and 2.5 μm, preferably, but not limited to, 1.5 μm or 2 μm.

Specifically, the material of the deposited reflective metal film may be a metal film layer having a light reflectance of more than 80% and a thickness of 80 nm to 500 nm. The metal film layer may be, but not limited to, a metal aluminum film layer or a metal silver film layer.

Preferably, in the technical solution proposed by the embodiment of the present invention, the material of the deposited reflective metal film is a metal silver film layer having a high light reflectivity.

S12, patterning the reflective metal film to remove the metal film above the anode electrode.

The deposited reflective metal film can be masked, exposed, developed, photolithographically, etched, etc. to remove the reflective metal film located above the anode electrode. The process of this step is a conventional technique and will not be described herein.

S13: etching the transparent organic film by using the patterned metal film as a mask, exposing the anode electrode to form a pixel defining layer having a pixel definition pattern.

Wherein, the transparent organic film directly above the anode electrode may be removed by dry etching to expose the anode electrode to form a pixel defining layer having a pixel definition pattern.

When the patterning process is performed, the corresponding process can be performed using a mask having the same pattern.

Specifically, for the array substrate after sequentially depositing the transparent organic film and the reflective metal film, a mask having the same pattern may be used, and the transparent organic film and the reflective metal film are patterned together to expose the anode electrode to form a pixel definition. The pixel definition layer of the pattern. Or the array substrate after the transparent organic film and the reflective metal film are sequentially deposited, and the same reflective mask is used to pattern the deposited reflective metal film and the transparent organic film, respectively, and the anode electrode is leaked to form a pixel-defined pattern. Pixel definition layer.

Step S14, sequentially depositing an organic light-emitting layer and a cathode on the array substrate on which the pixel defining layer having the pixel defining pattern is formed.

A hole transport layer, an organic light emitting layer, an electron transport layer, and a WOLED top electrode are sequentially formed on the array substrate on which the pixel defining layer having the pixel defining pattern is formed by a thin film deposition process to form a WOLED device.

The above steps are merely illustrative of the manufacturing steps of the WOLED device of the present invention, and do not limit the present invention. All the steps that can be used to fabricate the WOLED device are applicable to the present invention. The manufacturing steps of the WOLED device of the present invention do not require the use of FMM during the evaporation process. Mask (high-precision evaporation mask), and only need to adopt CMM Mask (conventional evaporation mask), can effectively improve the alignment yield, and solve the OLED three-pixel display manufacturing method in the prior art, the OLED evaporation The process alignment accuracy and difficulty are relatively high, which causes the problem that the large-size OLED display process yield cannot be improved.

Step S2: depositing a first inorganic film layer on the WOLED device by chemical vapor deposition, including the following substeps:

S21, gasification: taking raw materials SiNx, SiON, SiOx or Al2O3, gasifying the raw materials to prepare a gas required for the process;

Specifically, one or more of the raw materials SiNx, SiON, SiOx, and Al2O3 are selected as needed, and an appropriate amount of the raw materials is taken, heated in an evaporator, and gasified at 500-1000 ° C to prepare a gas required for the process; The evaporator has a gasification temperature of 800-1000 ° C under normal pressure, a negative pressure of the evaporator (10 Kpa), and a gasification temperature of 500-800 ° C.

In this embodiment, Al ₂ O ₃ is selected as the raw material. When the gas is vaporized at normal pressure, the evaporator is heated to 1000 ° C. When the gas is compressed by a negative pressure, the evaporator is first evacuated to 10 KPa and the heating temperature is 500 ° C.

S22, the prepared gas is introduced into the reaction chamber of the chemical vapor deposition apparatus through a conveying pipe, and the control gas flow rate is 10 m/s;

Step S3: repeating step S2, depositing a first inorganic film layer again until the required thickness of the first inorganic film layer is reached;

Step S4: using a spraying device to fabricate the color photoresist by spraying, respectively spraying different color photoresist materials into a specified pixel defining layer of the WOLED device, and then hardening them to form a red color photoresist and a green light respectively. Color photoresist and blue color photoresist, including the following sub-steps:

The above-mentioned heating or UV hardening means is a conventional technique, and the present invention can be directly subjected to a hardening treatment by a conventional technique.

Step S5: depositing a second inorganic film layer on the first inorganic film layer and the red color resist, the green color resist, and the blue color resist by chemical vapor deposition, and specifically includes the following substeps:

S51, taking raw materials SiNx, SiON, SiOx or Al ₂ O ₃ , gasifying the raw materials to prepare a gas required for the process;

S53, the gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the WOLED device to form a second inorganic film;

The above step of depositing the second inorganic film layer is the same as the step of depositing the first inorganic film layer, and the above steps can be directly referred to.

Step S6: Step S5 is repeated to deposit a second inorganic film layer again until the desired thickness of the second inorganic film layer is reached to obtain a final display.

The above process conditions and process parameters are set according to actual operations, and the present invention is not limited.

Claims

A display comprising a WOLED device, characterized in that at least one layer of a first inorganic film covering the WOLED device is deposited on the WOLED device, the first inorganic film layer corresponding to a specified pixel defining layer of the WOLED device Providing a red color resist, a green color resist, and a blue color resist, wherein the first inorganic film layer is deposited with at least one second inorganic film layer, and the second inorganic film layer covers the red color Photoresist, green color resist and blue color resist and the first inorganic film layer.
The display according to claim 1, wherein the first inorganic film layer of the single layer has a thickness of 500 to 2000 nm.
The display according to claim 1, wherein the first inorganic film layer is provided with at least two layers, which are sequentially deposited on the WOLED device, and at least two layers of the first inorganic film layer have a total thickness of ≤2000 nm.
The display according to claim 1, wherein the red color photoresist, the green color photoresist, and the blue color photoresist are respectively sprayed and hardened on a white light pixel defining layer of the WOLED device.
The display according to claim 1, wherein the thickness of the red color photoresist, the green color photoresist, and the blue color photoresist are each 50-3000 nm.
The display according to claim 1, wherein the first inorganic film layer and the second inorganic film layer are each made of at least one of SiNx, SiON, SiOx or Al 2 O 3 .
The display according to claim 1, wherein the second inorganic film layer of the single layer has a thickness of 500 to 2000 nm.
The display according to claim 1, wherein the second inorganic film layer is provided with at least two layers, at least two layers of the second inorganic film layer have a total thickness of ≤ 2000 nm, and at least two layers of the second inorganic layer. The film layer is sequentially deposited on the first inorganic film layer and covers the red light color resist, the green color resist, and the blue color resist.
The display of claim 1 wherein the pixel defining layer of the WOLED device is further provided with a black photoresist.
A method of manufacturing a display, comprising the steps of:

S1, manufacturing a WOLED device;

S2, depositing a first inorganic film layer on the WOLED device by chemical vapor deposition;

S3, if necessary, repeating step S2, depositing a first inorganic film layer again until the required thickness of the first inorganic film layer is reached;

S4, spraying different color photoresist materials into the specified pixels of the WOLED device by using a spraying method, and then hardening them to form a red color resist, a green color resist, and a blue color resist;

S5, depositing a second inorganic film layer on the first inorganic film layer and the red color resist, the green color resist, and the blue color resist by chemical vapor deposition;

S6. If necessary, repeat step S5 to deposit a second inorganic film layer until the desired thickness of the second inorganic film layer is reached to obtain a final display.
The display manufacturing method according to claim 10, wherein the step S1 comprises the following substeps:

S11, sequentially depositing a transparent organic film and a reflective metal film on the array substrate; S12, patterning the reflective metal film to remove the metal film above the anode electrode; S13, using the patterned metal film as a mask Etching the transparent organic film to expose the anode electrode to form a pixel defining layer having a pixel defining pattern; S14, sequentially depositing an organic light emitting layer and a cathode on the array substrate forming the pixel defining layer.
The display manufacturing method according to claim 10, wherein the step S2 comprises the following substeps:

S21, taking raw materials SiNx, SiON, SiOx or Al 2 O 3 , gasifying the raw materials to prepare a gas required for the process;

S22, the gas produced in step S21 is introduced into the reaction chamber of the chemical vapor deposition apparatus;

S23. The gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the WOLED device to form a first inorganic film.
The display manufacturing method according to claim 10, wherein in the step S4, the following sub-steps are included:

S41. Manufacture of red luminescent photoresist: spraying red luminescent pigment in a specified pixel definition layer, and hardening it by heating or UV;

S42. Manufacture of green luminescent photoresist: spraying green luminescent pigment in a specified pixel defining layer, and hardening it by heating or UV;

S43. Manufacture of blue luminescent photoresist: The blue luminescent pigment is sprayed in a specified pixel defining layer and hardened by heating or UV.
The display manufacturing method according to claim 10, wherein the step S5 comprises the following substeps:

S51, taking raw materials SiNx, SiON, SiOx or Al 2 O 3 , gasifying the raw materials to prepare a gas required for the process;

S52, the gas produced in step S51 is introduced into the reaction chamber of the chemical vapor deposition apparatus;

S53. The gas introduced into the reaction chamber generates a plasma under the action of an electric field or a microwave, and the plasma is bombarded and deposited on the red color resist, the green color resist and the blue color resist, and the first inorganic A second inorganic film is formed on the film layer.