WO2021238129A1 - Display panel and display panel manufactoring method - Google Patents

Display panel and display panel manufactoring method Download PDF

Info

Publication number
WO2021238129A1
WO2021238129A1 PCT/CN2020/132827 CN2020132827W WO2021238129A1 WO 2021238129 A1 WO2021238129 A1 WO 2021238129A1 CN 2020132827 W CN2020132827 W CN 2020132827W WO 2021238129 A1 WO2021238129 A1 WO 2021238129A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
thin film
film transistor
display panel
Prior art date
Application number
PCT/CN2020/132827
Other languages
French (fr)
Chinese (zh)
Inventor
唐甲
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2021238129A1 publication Critical patent/WO2021238129A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • This application relates to the field of display technology, and in particular to a display panel and a method for manufacturing the display panel.
  • OLED Organic Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • OLED displays have two types: bottom emission type and top emission type.
  • light emitted by light-emitting elements generally white-light OLED devices
  • a reflective cathode is provided in the light-emitting element, so that the light directed to the reflective cathode is reflected and emitted from the front of the display.
  • the semiconductor material in the thin film transistor is photosensitive, which is affected by the light. Irradiation will cause changes in the performance of the thin film transistor, which is usually manifested as the deterioration of the working stability of the thin film transistor, which in turn affects the display quality of the OLED display.
  • the present application provides a display panel, the display panel has a display area, at least within the display area, the display panel includes:
  • the first light-shielding layer is arranged on a side of the light-emitting layer close to the thin film transistor layer, and the vertical projection of the first light-shielding layer on the thin film transistor layer covers the thin film transistor.
  • the light emitting structure includes: an anode layer provided on the thin film transistor layer, an organic functional layer provided on the anode layer, and a cathode layer provided on the organic functional layer ;
  • the vertical projection of the anode layer on the thin film transistor layer covers the thin film transistor.
  • the first light shielding layer is disposed on the anode layer.
  • the light-emitting layer further includes a pixel definition layer, a plurality of through holes are arranged on the pixel definition layer, and the light-emitting structure is arranged in the through holes.
  • the first light-shielding layer and the light-emitting structure are staggered in the thickness direction of the display panel.
  • a second light shielding layer is further provided between the base substrate and the thin film transistor layer, and the vertical projection of the second light shielding layer on the thin film transistor layer covers the thin film transistor .
  • a buffer layer is further provided between the base substrate and the thin film transistor layer, and the second light shielding structure is provided in the buffer layer.
  • opposite poles of a storage capacitor are provided on the side of the buffer layer close to the base substrate and the side of the buffer layer close to the thin film transistor layer, and the storage capacitor and The position of the light emitting structure in the thickness direction of the display panel corresponds vertically.
  • the display panel further includes a color filter layer disposed between the thin film transistor layer and the light-emitting layer, and the color filter layer and the light-emitting structure are on the display panel.
  • the position in the thickness direction corresponds vertically.
  • a flat layer is provided between the thin film transistor layer and the light-emitting layer, and the color filter layer is provided in the flat layer.
  • the thin film transistor includes an active layer, a gate insulating layer, a gate, an intermediate insulating layer, and source and drain electrodes, and the anode layer is electrically connected to the source and drain electrodes.
  • This application also provides a method for manufacturing a display panel, including the following steps:
  • a thin film transistor layer is fabricated on the base substrate, the thin film transistor layer covers the second light shielding layer, the thin film transistor layer includes a plurality of thin film transistors, and the thin film transistors and the second light shielding layer are in the Corresponding vertically in the thickness direction of the display panel;
  • a light-emitting layer is fabricated on the thin-film transistor layer, the light-emitting layer includes a first light-shielding layer on a side close to the thin-film transistor layer, and a plurality of light-emitting structures, and the light-emitting structure and the thin-film transistor are in the display panel
  • the thickness direction is staggered, and the vertical projection of the first light shielding layer on the thin film transistor layer covers the thin film transistor.
  • the step of manufacturing the second light shielding layer on the base substrate includes:
  • a buffer layer covering the first electrode plate and the second light shielding layer is fabricated on the base substrate.
  • a second electrode plate is fabricated on the buffer layer, and the first electrode plate and the second electrode plate together form a storage capacitor.
  • the step of manufacturing the light-emitting layer on the thin film transistor layer includes:
  • a cathode layer is formed on the pixel definition layer and in the through hole, the cathode layer covers the organic functional layer, and at least in the through hole the cathode layer is in direct contact with the organic functional layer.
  • the method of manufacturing the anode layer and the first light-shielding layer includes the following steps:
  • a second half-tone mask is used to perform a photomask process on the first intermediate light-shielding layer to form the first light-shielding layer.
  • the method further includes the following steps:
  • a color filter layer is fabricated on the thin film transistor layer, the color filter layer and the thin film transistor are staggered in the thickness direction of the display panel, and the color filter layer is made to be different from the one produced later.
  • the position of the light-emitting structure in the thickness direction of the display panel corresponds.
  • the method further includes a step of manufacturing a thin-film encapsulation layer on the light-emitting layer.
  • the first light-shielding layer and the second light-shielding layer are made of a light-absorbing material or a light-reflecting material.
  • the present application also provides a display panel, the display panel has a display area, at least within the display area, the display panel includes:
  • the second light-shielding layer is arranged on the base substrate;
  • the light-emitting layer is arranged on the thin film transistor layer, the light-emitting layer includes a plurality of light-emitting structures formed by stacking an anode layer, an organic functional layer and a cathode layer, and the anode layer is electrically connected to the thin film transistor.
  • the light emitting structure and the thin film transistor are staggered in the thickness direction of the display panel;
  • the first light-shielding layer is arranged on the anode layer, and the vertical projection of the first light-shielding layer on the thin film transistor layer covers the thin film transistor.
  • the display panel provided by the present application includes a first light-shielding layer disposed on the side of the light-emitting layer close to the thin film transistor layer.
  • the positions of the layer and the thin film transistors in the thin film transistor layer are set up and down to correspond vertically, so that the light directed to the thin film transistor is blocked by the first light shielding layer, thereby avoiding the thin film transistor from appearing due to light irradiation
  • the problem of poor performance stability is conducive to improving the display quality of the display panel.
  • FIG. 1 is a schematic diagram of a first structure of a display panel provided by an embodiment of the present application
  • FIG. 2 is a schematic diagram of a second structure of a display panel provided by an embodiment of the present application.
  • FIG. 3 is a flowchart of a method for manufacturing a display panel provided by an embodiment of the present application
  • 3a is a schematic diagram of the structure after a buffer layer and a second light-shielding layer are fabricated on a base substrate in the method for fabricating a display panel provided by an embodiment of the present application;
  • 3b is a schematic diagram of a structure after a thin film transistor layer is fabricated on the buffer layer in the method for fabricating a display panel provided by an embodiment of the present application;
  • 3c is a schematic diagram of the structure after a flat layer is formed on the thin film transistor layer in the display panel manufacturing method provided by the embodiment of the present application;
  • 3d is a schematic diagram of the structure after an anode material layer and a first light-shielding material layer are fabricated on the flat layer in the display panel fabrication method provided by the embodiment of the present application;
  • 3e is a schematic diagram of the structure after the anode layer and the first intermediate light-shielding layer are formed in the display panel manufacturing method provided by the embodiment of the present application;
  • 3f is a schematic diagram of the structure after forming the first light shielding layer in the manufacturing method of the display panel provided by the embodiment of the present application;
  • FIG. 3g is a schematic diagram of the structure after the light-emitting layer is fabricated in the method for fabricating a display panel provided by an embodiment of the present application.
  • An embodiment of the present application provides a display panel that includes a first light-shielding layer disposed on a side of a light-emitting layer close to the thin film transistor layer, so that the first light-shielding layer and the thin film transistor in the thin film transistor layer The positions correspond vertically and vertically, and the first light-shielding layer is used to block the light directed to the thin film transistor, thereby avoiding the problem of poor performance stability of the thin film transistor due to the light exposure, which is beneficial to improve The display quality of the display panel.
  • FIG. 1 it is a schematic diagram of the first structure of a display panel provided by an embodiment of the present application.
  • the display panel has a display area, at least within the display area, the display panel has a multilayer structure, and the multilayer structure of the display panel includes a base substrate 10, The thin film transistor layer 20 and the light emitting layer 30 provided on the thin film transistor layer 20.
  • the display area is an area on the display panel that has the function of displaying pictures
  • the display panel may also include a non-display area arranged around the display area, and the non-display area may have the Part of the layered structure of the display area;
  • FIG. 1 only shows a schematic diagram of the structure of a part of the display area of the display panel, and those skilled in the art can easily derive the entire display area through the relevant text description and the display in FIG. 1 The structural characteristics.
  • the base substrate 10 may be made of hard materials such as glass, or may be made of flexible materials such as polyimide. It should be noted that the base substrate 10 is a basic support for each functional element in the display panel, and is also a light-emitting surface when the display panel displays images.
  • the thin film transistor layer 20 is disposed on the base substrate 10, and a plurality of thin film transistors 20 a are disposed in the thin film transistor layer 20.
  • a buffer layer 40 is further provided between the base substrate 10 and the thin film transistor layer 20.
  • the buffer layer 40 is made of a flexible organic material, such as polyimide. The buffer layer 40 is used to relieve the difference in expansion and contraction performance between the base substrate 10 and the thin film transistor layer 20.
  • the thin film transistor layer 20 includes an active layer 22 arranged on the buffer layer 40, a gate insulating layer 23 arranged on the active layer 22, and a gate insulating layer 23 arranged on the gate insulating layer 23
  • the source and drain 25 on the upper surface, wherein the source and drain 25 are electrically connected to the active layer 22 through a via hole disposed on the intermediate insulating layer 26.
  • the active layer 22, the gate insulating layer 23, the gate 24, the intermediate insulating layer 26, and the source and drain 25 together constitute the thin film transistor 20a.
  • the structure of the thin film transistor layer 20 is not limited to the one shown in FIG. 1.
  • the display panel provided by another embodiment of the present application also provides another structure of the thin film transistor layer 20.
  • the thin film transistor layer 20 includes an active layer 22 disposed on the buffer layer 40, a gate insulating layer 23 disposed on the active layer 22, and The gate 24 and the source and drain 25 on the gate insulating layer 23, as well as the buffer layer 40 and covering the active layer 22, the gate insulating layer 23, the gate 24 and the In the insulating transition layer 27 of the source and drain 25, the source and drain 25 are electrically connected to the active layer 22 through a via provided on the gate insulating layer 23.
  • the active layer 22, the gate insulating layer 23, the gate 24, and the source and drain 25 together constitute the thin film transistor 20a.
  • the display panel provided by the embodiment shown in FIG. 1 and the display panel provided by the embodiment shown in FIG. 2 only differ in the structure of the thin film transistor layer 20, and have the same structure in other aspects. feature. The following continues to describe the structure of the display panel provided by the embodiment shown in FIG. 1.
  • a first electrode plate 41 and a second light shielding layer 42 are provided on the side of the buffer layer 40 close to the base substrate 10, and the second light shielding layer 42 is provided on the first electrode plate 41.
  • the source and drain electrodes 25 are electrically connected to the second light-shielding layer 42 through the via holes on the intermediate insulating layer 26 and the buffer layer 40.
  • the vertical projection of the second light shielding layer 42 on the thin film transistor layer 20 covers the thin film transistor 20a.
  • the second light-shielding layer 42 is used to block external light that is directed to the thin film transistor 20a, so as to prevent external light from affecting the performance of the thin film transistor 20a.
  • a second electrode plate 2 is provided on the side of the buffer layer 40 close to the thin film transistor layer 20.
  • the first electrode plate 41 and the second electrode plate 21 are electrically insulated by the buffer layer 40, the first electrode plate 41 and the second electrode plate 21 form a storage capacitor, and the storage capacitor
  • the thin film transistor 20a is staggered in the thickness direction of the display panel.
  • the light-emitting layer 30 is disposed on the thin film transistor layer 20, and the light-emitting layer 30 includes a plurality of light-emitting structures 30a.
  • a flat layer 50 is further provided between the light-emitting layer 30 and the thin film transistor layer 20, and the flat layer 50 is used to form a flat surface on the thin film transistor layer 20 to facilitate the light-emitting layer The settings of each element in 30.
  • a color filter layer 51 is provided in the flat layer 50, and the color filter layer 51 corresponds vertically to the position of the light emitting structure 30a in the thickness direction of the display panel, so that the light emitting The light emitted by the structure 30a is filtered by the color filter layer 51 and converted into monochromatic light.
  • the color filter layer 51 includes a red filter block 51a, a green filter block 51b, and a blue filter block 51c, so that the light emitted by the light-emitting structure 30a is filtered by the color filter layer 51 Then it is transformed into three monochromatic lights of red, green and blue.
  • the light emitting layer 30 includes a pixel defining layer 33, a plurality of through holes are arranged on the pixel defining layer 33, and the light emitting structure 30a is arranged in the through holes.
  • the light emitting structure 30a includes an anode layer 31 disposed on the flat layer 50, an organic functional layer 34 disposed on the anode layer 31, and a cathode layer 35 disposed on the organic functional layer 34 .
  • the anode layer 31, the organic functional layer 34, and the cathode layer 35 are directly stacked and connected in sequence, thereby forming the light-emitting structure 30a in this area.
  • the areas of the anode layer 31, the organic functional layer 34 and the cathode layer 35 respectively extending outward and not in direct contact cannot emit light, and therefore do not form a light emitting structure.
  • the anode layer 31 is electrically connected to the thin film transistor 20a through the via hole on the flat layer 50, and the light emitting structure 30a and the thin film transistor 20a are staggered in the thickness direction of the display panel, thereby The light emitted by the light-emitting structure 30a is prevented from directly radiating to the thin film transistor 20a.
  • the thickness direction of the display panel refers to a direction perpendicular to the light-emitting layer 30 from the base substrate 10, or a direction perpendicular to the base substrate 10 from the light-emitting layer 30.
  • the light-emitting layer 30 is provided with a first light-shielding layer 32 on the side close to the thin film transistor layer 20, and the vertical projection of the first light-shielding layer 32 on the thin film transistor layer 20 covers the thin film transistor layer 20. 20a.
  • the first light shielding layer 32 is used to shield the light emitted by the light-emitting structure 30a and reflected by the cathode 35 to the thin film transistor 20a, so as to prevent the reflected light from affecting the performance of the thin film transistor 20a.
  • the first light shielding layer 32 is disposed on the anode layer 31, and is staggered from the light emitting structure 30a in the thickness direction of the display panel. It should be noted that by disposing the first light-shielding layer 32 on the anode layer 31, the first light-shielding layer 32 is embedded in the overall structure of the light-emitting layer 30, which is beneficial to simplify the structure of the display panel. The complexity of the above and the complexity of the manufacturing process.
  • the first light-shielding layer 32 may be made of a metal material or a non-metal material with a light-absorbing effect, or a metal material or a non-metal material with a light-reflecting effect, so as to achieve the purpose of blocking light penetration.
  • the display panel provided by the embodiments of the present application includes a first light-shielding layer disposed on the side of the light-emitting layer close to the thin film transistor layer.
  • the position is set up and down to correspond vertically, so that the light directed to the thin film transistor is blocked by the first light-shielding layer, thereby avoiding the problem of poor performance stability of the thin film transistor due to light irradiation, which is beneficial to improve The display quality of the display panel.
  • Another embodiment of the present application also provides a method for manufacturing a display panel. As shown in FIG. 3, the method for manufacturing a display panel includes the following steps:
  • Step S101 referring to FIG. 3a, a base substrate 10 is provided, and a second light-shielding layer 42 is formed on the base substrate.
  • the step S101 may specifically include the following operations: fabricating a first electrode plate 41 on the base substrate 10; fabricating the second light-shielding layer 42 on the first electrode plate 41; A buffer layer 40 covering the first electrode plate 41 and the second light shielding layer 42 is fabricated on the base substrate 40.
  • the method of manufacturing the first electrode plate 41 and the second light-shielding layer 42 may include: after forming a film through a vapor deposition process or a coating process, and then using a photomask process to perform an etching operation.
  • Step S102 As shown in FIG. 3b, a thin film transistor layer 20 is fabricated on the base substrate 10.
  • the thin film transistor layer 20 covers the second light shielding layer 42, and the thin film transistor layer 20 includes a plurality of thin film transistors 20a.
  • the thin film transistor 20a and the second light-shielding layer 42 vertically correspond to the thickness direction of the display panel.
  • the buffer layer 40 is provided on the base substrate 10, and the thin film transistor layer 20 is fabricated on the buffer layer 40.
  • the thin film transistor layer 20 includes an active layer 22 arranged on the buffer layer 40, a gate insulating layer 23 arranged on the active layer 22, and a gate insulating layer 23 arranged on the gate insulating layer 23
  • the source and drain 25 on the upper surface, wherein the source and drain 25 are electrically connected to the active layer 22 through a via hole disposed on the intermediate insulating layer 26.
  • the active layer 22, the gate insulating layer 23, the gate 24, the intermediate insulating layer 26, and the source and drain 25 together constitute the thin film transistor 20a.
  • a second electrode plate 21 is fabricated on the buffer layer 40.
  • the first electrode plate 41 and the second electrode plate 21 together form a storage capacitor.
  • a flat layer 50 is fabricated on the thin film transistor layer 20, and the flat layer 50 is used to form a flat surface on the thin film transistor layer 20 To facilitate subsequent operations.
  • a light-emitting layer 30 is fabricated on the thin film transistor layer 20.
  • the light-emitting layer 30 includes a first light-shielding layer 32 on the side close to the thin film transistor layer 20 and a plurality of light-emitting structures 30a.
  • the light emitting structure 30a and the thin film transistor 20a are staggered in the thickness direction of the display panel, and the vertical projection of the first light shielding layer 32 on the thin film transistor layer 20 covers the thin film transistor 20a.
  • the flat layer 50 is provided on the thin film transistor layer 20, and the light-emitting layer 30 is fabricated on the flat layer 50.
  • the method of fabricating the light-emitting layer 30 on the thin film transistor layer 20 includes the following steps:
  • a cathode layer 35 is formed on the pixel defining layer 33 and in the through hole 331, the cathode layer 35 covers the organic functional layer 34, and at least the cathode layer 35 and the through hole 331
  • the organic functional layer 34 is in direct contact.
  • the anode layer 31, the organic functional layer 34, and the cathode layer 35 are directly stacked and connected in sequence, thereby forming the light emission in this area.
  • Structure 30a; the areas of the anode layer 31, the organic functional layer 34 and the cathode layer 35 respectively extending outward and not in direct contact cannot emit light, and therefore do not form a light emitting structure.
  • the method of manufacturing the anode layer 31 and the first light-shielding layer 32 includes the following steps:
  • an anode material layer 31a is formed on the thin film transistor layer 20 or the flat layer 50 by a coating process or a vapor deposition process or an inkjet printing process; on the anode material layer 31a, an anode material layer 31a is formed by coating A process or a vapor deposition process or an inkjet printing process forms the first light-shielding material layer 32a.
  • a first halftone mask is used to jointly perform a photomask process on the anode material layer 31a and the first light-shielding material layer 32a to form the anode layer 31 and the first intermediate layer.
  • Light shielding layer 32b is used to jointly perform a photomask process on the anode material layer 31a and the first light-shielding material layer 32a to form the anode layer 31 and the first intermediate layer.
  • a second halftone mask is used to perform a photomask process on the first intermediate light-shielding layer 32b to form the first light-shielding layer 32.
  • a color filter layer 51 is formed on the thin film transistor layer 20 so that the color filter layer 51 and the thin film transistor 20a are staggered in the thickness direction of the display panel, and the color filter layer 51 and The position of the light emitting structure 30a produced later in the thickness direction of the display panel corresponds to that.
  • the flat layer 50 is provided between the thin film transistor layer 20 and the light-emitting layer 30, and the color filter layer 51 is provided in the flat layer 50.
  • the color filter layer 51 includes a red filter block 51a, a green filter block 51b, and a blue filter block 51c, so that the light emitted by the light-emitting structure 30a is filtered by the color filter layer 51 Then it is transformed into three monochromatic lights of red, green and blue.
  • the manufacturing method of the display panel further includes a step of manufacturing a thin-film encapsulation layer on the light-emitting layer 30.
  • the thin film encapsulation layer is used to prevent external air and moisture from corroding the internal structure of the display panel.
  • the manufacturing method of the display panel includes the step of fabricating a first light-shielding layer on the side of the light-emitting layer close to the thin-film transistor layer, and making the first light-shielding layer and the thin-film transistor layer
  • the position of the thin film transistor in the TFT is set to correspond vertically, so that the light directed to the thin film transistor is blocked by the first light-shielding layer, which avoids the deterioration of the performance stability of the thin film transistor due to light irradiation.
  • the problem is conducive to improving the display quality of the display panel.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The present application provides a display panel and a display panel manufacturing method. The display panel comprises a base substrate, a thin film transistor layer and a light-emitting layer, a first light-shielding layer being provided on a side of the light-emitting layer close to the thin film transistor layer, and the position of the first light-shielding layer corresponding vertically to the position of a thin film transistor in the thin film transistor layer. The present application uses the first light-shielding layer to shield light incident onto the thin film transistor, being beneficial to improve the display quality of the display panel.

Description

显示面板及显示面板制作方法Display panel and display panel manufacturing method
本申请要求于2020年05月27日提交中国专利局、申请号为202010461808.5、发明名称为“显示面板及显示面板制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of a Chinese patent application filed with the Chinese Patent Office on May 27, 2020, the application number is 202010461808.5, and the invention title is "display panel and display panel manufacturing method", the entire content of which is incorporated into this application by reference .
技术领域Technical field
本申请涉及显示技术领域，尤其涉及一种显示面板及显示面板制作方法。This application relates to the field of display technology, and in particular to a display panel and a method for manufacturing the display panel.
背景技术Background technique
OLED（Organic Light Emitting Diode，有机发光二极管）显示器具有自发光、驱动电压低、发光效率高、响应时间短、对比度高、宽视角等性能特点，以及可实现柔性显示与大面积全色显示等诸多优势，被业界认为最有发展潜力的显示器。OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) displays have the performance characteristics of self-luminescence, low driving voltage, high luminous efficiency, short response time, high contrast, wide viewing angle, etc., as well as flexible display and large-area full-color display. Advantage, considered by the industry as the most promising display.
OLED显示器具有底发光型和顶发光型两种。对于底发光型OLED显示器，发光元件（一般为白光OLED器件）发出的光线需要穿过显示器的层状结构后才能射出。为了提高底发光型OLED显示器的光能利用率，会在发光元件中设置反射型阴极，使射向该反射型阴极的光线被反射而从显示器的正面射出。但是，经反射型阴极反射出来的光线在穿过显示器的层状结构的过程中，会有一部分光线照射在显示器的薄膜晶体管上；而薄膜晶体管中的半导体材料具有光敏感性，其在受到光线照射后会引起薄膜晶体管性能的变化，通常表现为薄膜晶体管的工作稳定性变差，进而影响OLED显示器的显示品质。OLED displays have two types: bottom emission type and top emission type. For bottom-emitting OLED displays, light emitted by light-emitting elements (generally white-light OLED devices) need to pass through the layered structure of the display before being emitted. In order to improve the light energy utilization of the bottom emission type OLED display, a reflective cathode is provided in the light-emitting element, so that the light directed to the reflective cathode is reflected and emitted from the front of the display. However, when the light reflected by the reflective cathode passes through the layered structure of the display, a part of the light is irradiated on the thin film transistor of the display; and the semiconductor material in the thin film transistor is photosensitive, which is affected by the light. Irradiation will cause changes in the performance of the thin film transistor, which is usually manifested as the deterioration of the working stability of the thin film transistor, which in turn affects the display quality of the OLED display.
技术问题technical problem
底发光型OLED中，被反射型阴极反射的光线在穿过显示器的层状结构过程中，会有一部分光线照射在显示器的薄膜晶体管上，造成薄膜晶体管中的半导体材料的性能变化，进而影响薄膜晶体管的工作稳定性和OLED显示器的显示品质。In bottom-emitting OLEDs, when the light reflected by the reflective cathode passes through the layered structure of the display, a part of the light will irradiate the thin film transistor of the display, causing the performance of the semiconductor material in the thin film transistor to change, thereby affecting the thin film The working stability of the transistor and the display quality of the OLED display.
技术解决方案Technical solutions
为了解决上述技术问题，本申请提供的解决方案如下：In order to solve the above technical problems, the solutions provided by this application are as follows:
本申请提供一种显示面板，所述显示面板上具有显示区域，至少在所述显示区域内，所述显示面板包括：The present application provides a display panel, the display panel has a display area, at least within the display area, the display panel includes:
衬底基板；Base substrate
薄膜晶体管层，设置于所述衬底基板上，所述薄膜晶体管层中设置有多个薄膜晶体管；A thin film transistor layer arranged on the base substrate, and a plurality of thin film transistors are arranged in the thin film transistor layer;
发光层，设置于所述薄膜晶体管层上，所述发光层包括多个发光结构，所述发光结构与所述薄膜晶体管电性连接，且所述发光结构与所述薄膜晶体管在所述显示面板的厚度方向上错开设置；The light-emitting layer is disposed on the thin film transistor layer, the light-emitting layer includes a plurality of light-emitting structures, the light-emitting structure is electrically connected to the thin film transistor, and the light-emitting structure and the thin film transistor are in the display panel Staggered setting in the thickness direction;
第一遮光层，设置于所述发光层的靠近所述薄膜晶体管层的一侧，所述第一遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。The first light-shielding layer is arranged on a side of the light-emitting layer close to the thin film transistor layer, and the vertical projection of the first light-shielding layer on the thin film transistor layer covers the thin film transistor.
在本申请的显示面板中，所述发光结构包括：设置于所述薄膜晶体管层上的阳极层、设置于所述阳极层上的有机功能层、以及设置于所述有机功能层上的阴极层；In the display panel of the present application, the light emitting structure includes: an anode layer provided on the thin film transistor layer, an organic functional layer provided on the anode layer, and a cathode layer provided on the organic functional layer ；
所述阳极层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。The vertical projection of the anode layer on the thin film transistor layer covers the thin film transistor.
在本申请的显示面板中，所述第一遮光层设置于所述阳极层上。In the display panel of the present application, the first light shielding layer is disposed on the anode layer.
在本申请的显示面板中，所述发光层还包括像素定义层，所述像素定义层上设置有多个通孔，所述发光结构设置于所述通孔中。In the display panel of the present application, the light-emitting layer further includes a pixel definition layer, a plurality of through holes are arranged on the pixel definition layer, and the light-emitting structure is arranged in the through holes.
在本申请的显示面板中，所述第一遮光层与所述发光结构在所述显示面板的厚度方向上错开设置。In the display panel of the present application, the first light-shielding layer and the light-emitting structure are staggered in the thickness direction of the display panel.
在本申请的显示面板中，所述衬底基板与所述薄膜晶体管层之间还设置有第二遮光层，所述第二遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。In the display panel of the present application, a second light shielding layer is further provided between the base substrate and the thin film transistor layer, and the vertical projection of the second light shielding layer on the thin film transistor layer covers the thin film transistor .
在本申请的显示面板中，所述衬底基板与所述薄膜晶体管层之间还设置有缓冲层，所述第二遮光结构设置于所述缓冲层中。In the display panel of the present application, a buffer layer is further provided between the base substrate and the thin film transistor layer, and the second light shielding structure is provided in the buffer layer.
在本申请的显示面板中，在所述缓冲层靠近所述衬底基板的一侧和所述缓冲层靠近所述薄膜晶体管层的一侧分别设置存储电容的相对两极，且所述存储电容与所述发光结构在所述显示面板的厚度方向上的位置垂直对应。In the display panel of the present application, opposite poles of a storage capacitor are provided on the side of the buffer layer close to the base substrate and the side of the buffer layer close to the thin film transistor layer, and the storage capacitor and The position of the light emitting structure in the thickness direction of the display panel corresponds vertically.
在本申请的显示面板中，所述显示面板还包括设置于所述薄膜晶体管层与所述发光层之间的彩色滤光层，所述彩色滤光层与所述发光结构在所述显示面板的厚度方向上的位置垂直对应。In the display panel of the present application, the display panel further includes a color filter layer disposed between the thin film transistor layer and the light-emitting layer, and the color filter layer and the light-emitting structure are on the display panel. The position in the thickness direction corresponds vertically.
在本申请的显示面板中，所述薄膜晶体管层与所述发光层之间设置有平坦层，所述彩色滤光层设置于所述平坦层中。In the display panel of the present application, a flat layer is provided between the thin film transistor layer and the light-emitting layer, and the color filter layer is provided in the flat layer.
在本申请的显示面板中，所述薄膜晶体管包括有源层、栅极绝缘层、栅极、中间绝缘层、及源漏极，所述阳极层与所述源漏极电性连接。In the display panel of the present application, the thin film transistor includes an active layer, a gate insulating layer, a gate, an intermediate insulating layer, and source and drain electrodes, and the anode layer is electrically connected to the source and drain electrodes.
本申请还提供一种显示面板制作方法，包括以下步骤：This application also provides a method for manufacturing a display panel, including the following steps:
提供一衬底基板，在所述衬底基板上制作第二遮光层；Providing a base substrate, and fabricating a second light-shielding layer on the base substrate;
在所述衬底基板上制作薄膜晶体管层，所述薄膜晶体管层覆盖所述第二遮光层，所述薄膜晶体管层包括多个薄膜晶体管，所述薄膜晶体管与所述第二遮光层在所述显示面板的厚度方向上垂直对应；A thin film transistor layer is fabricated on the base substrate, the thin film transistor layer covers the second light shielding layer, the thin film transistor layer includes a plurality of thin film transistors, and the thin film transistors and the second light shielding layer are in the Corresponding vertically in the thickness direction of the display panel;
在所述薄膜晶体管层上制作发光层，所述发光层包括靠近所述薄膜晶体管层一侧的第一遮光层、及多个发光结构，所述发光结构与所述薄膜晶体管在所述显示面板的厚度方向上相错开，所述第一遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。A light-emitting layer is fabricated on the thin-film transistor layer, the light-emitting layer includes a first light-shielding layer on a side close to the thin-film transistor layer, and a plurality of light-emitting structures, and the light-emitting structure and the thin-film transistor are in the display panel The thickness direction is staggered, and the vertical projection of the first light shielding layer on the thin film transistor layer covers the thin film transistor.
在本申请的显示面板制作方法中，在所述衬底基板上制作所述第二遮光层的步骤包括：In the display panel manufacturing method of the present application, the step of manufacturing the second light shielding layer on the base substrate includes:
在所述衬底基板上制作第一极板；Fabricating a first electrode plate on the base substrate;
在所述第一极板上制作所述第二遮光层；Fabricating the second light-shielding layer on the first electrode plate;
在所述衬底基板上制作覆盖所述第一极板和所述第二遮光层的缓冲层。A buffer layer covering the first electrode plate and the second light shielding layer is fabricated on the base substrate.
在本申请的显示面板制作方法中，制作所述薄膜晶体管层之前还包括以下步骤：In the manufacturing method of the display panel of the present application, the following steps are further included before manufacturing the thin film transistor layer:
在所述缓冲层上制作第二极板，所述第一极板与所述第二极板共同构成存储电容。A second electrode plate is fabricated on the buffer layer, and the first electrode plate and the second electrode plate together form a storage capacitor.
在本申请的显示面板制作方法中，在所述薄膜晶体管层上制作所述发光层的步骤包括：In the display panel manufacturing method of the present application, the step of manufacturing the light-emitting layer on the thin film transistor layer includes:
在所述薄膜晶体管层上制作阳极层；Forming an anode layer on the thin film transistor layer;
在所述阳极层上制作所述第一遮光层，所述第一遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管；Forming the first light-shielding layer on the anode layer, and a vertical projection of the first light-shielding layer on the thin film transistor layer covers the thin film transistor;
在所述薄膜晶体管层上制作覆盖所述阳极层及所述第一遮光层的像素定义层；Fabricating a pixel definition layer covering the anode layer and the first light shielding layer on the thin film transistor layer;
在所述像素定义层上形成通孔，以暴露部分所述阳极层；Forming a through hole on the pixel defining layer to expose a part of the anode layer;
在所述像素定义层上及所述通孔内制作有机功能层，位于所述通孔内的所述有机功能层与所述阳极层直接接触；Fabricating an organic functional layer on the pixel definition layer and in the through hole, and the organic functional layer in the through hole is in direct contact with the anode layer;
在所述像素定义层上及所述通孔内制作阴极层，所述阴极层覆盖所述有机功能层，并且至少在所述通孔内所述阴极层与所述有机功能层直接接触。A cathode layer is formed on the pixel definition layer and in the through hole, the cathode layer covers the organic functional layer, and at least in the through hole the cathode layer is in direct contact with the organic functional layer.
在本申请的显示面板制作方法中，制作所述阳极层和所述第一遮光层的方法包括以下步骤：In the manufacturing method of the display panel of the present application, the method of manufacturing the anode layer and the first light-shielding layer includes the following steps:
在所述薄膜晶体管层上通过涂布工艺或气相沉积工艺或喷墨打印工艺形成阳极材料层；Forming an anode material layer on the thin film transistor layer through a coating process, a vapor deposition process, or an inkjet printing process;
在所述阳极材料层上通过涂布工艺或气相沉积工艺或喷墨打印工艺形成第一遮光材料层；Forming a first light-shielding material layer on the anode material layer through a coating process, a vapor deposition process, or an inkjet printing process;
利用第一半色调掩膜板对所述阳极材料层和所述第一遮光材料层共同进行光罩制程，以形成所述阳极层及第一中间遮光层；Using a first halftone mask to jointly perform a photomask process on the anode material layer and the first shading material layer to form the anode layer and the first intermediate shading layer;
利用第二半色调掩膜板对所述第一中间遮光层进行光罩制程，以形成所述第一遮光层。A second half-tone mask is used to perform a photomask process on the first intermediate light-shielding layer to form the first light-shielding layer.
在本申请的显示面板制作方法中，在所述薄膜晶体管层上制作所述发光层之前，还包括以下步骤：In the manufacturing method of the display panel of the present application, before the light-emitting layer is fabricated on the thin film transistor layer, the method further includes the following steps:
在所述薄膜晶体管层上制作彩色滤光层，使所述彩色滤光层与所述薄膜晶体管在所述显示面板的厚度方向上相错开，且使所述彩色滤光层与之后制作的所述发光结构在所述显示面板的厚度方向上的位置相对应。A color filter layer is fabricated on the thin film transistor layer, the color filter layer and the thin film transistor are staggered in the thickness direction of the display panel, and the color filter layer is made to be different from the one produced later. The position of the light-emitting structure in the thickness direction of the display panel corresponds.
在本申请的显示面板制作方法中，还包括在所述发光层上制作薄膜封装层的步骤。In the manufacturing method of the display panel of the present application, the method further includes a step of manufacturing a thin-film encapsulation layer on the light-emitting layer.
在本申请的显示面板制作方法中，所述第一遮光层和所述第二遮光层由吸光材料或反光材料制作而成。In the manufacturing method of the display panel of the present application, the first light-shielding layer and the second light-shielding layer are made of a light-absorbing material or a light-reflecting material.
本申请还提供一种显示面板，所述显示面板上具有显示区域，至少在所述显示区域内，所述显示面板包括：The present application also provides a display panel, the display panel has a display area, at least within the display area, the display panel includes:
衬底基板；Base substrate
第二遮光层，设置于所述衬底基板上；The second light-shielding layer is arranged on the base substrate;
薄膜晶体管层，设置于所述第二遮光层上，所述薄膜晶体管层中设置有多个薄膜晶体管，所述薄膜晶体管与所述第二遮光层在所述显示面板的厚度方向上垂直对应；A thin film transistor layer disposed on the second light shielding layer, a plurality of thin film transistors are disposed in the thin film transistor layer, and the thin film transistors and the second light shielding layer vertically correspond to the second light shielding layer in the thickness direction of the display panel;
发光层，设置于所述薄膜晶体管层上，所述发光层包括由阳极层、有机功能层和阴极层堆叠而成的多个发光结构，所述阳极层与所述薄膜晶体管电性连接，所述发光结构与所述薄膜晶体管在所述显示面板的厚度方向上错开设置；以及The light-emitting layer is arranged on the thin film transistor layer, the light-emitting layer includes a plurality of light-emitting structures formed by stacking an anode layer, an organic functional layer and a cathode layer, and the anode layer is electrically connected to the thin film transistor. The light emitting structure and the thin film transistor are staggered in the thickness direction of the display panel; and
第一遮光层，设置于所述阳极层上，所述第一遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。The first light-shielding layer is arranged on the anode layer, and the vertical projection of the first light-shielding layer on the thin film transistor layer covers the thin film transistor.
有益效果Beneficial effect
本申请提供的显示面板包括设置于发光层的靠近薄膜晶体管层一侧的第一遮光层，本申请提供的显示面板制作方法包括制作所述第一遮光层的步骤，通过将所述第一遮光层与所述薄膜晶体管层中的薄膜晶体管的位置设置为上下垂直对应，使射向所述薄膜晶体管的光线被所述第一遮光层遮挡，从而避免了所述薄膜晶体管因受光线照射而出现的性能稳定性变差的问题，有利于提高显示面板的显示品质。The display panel provided by the present application includes a first light-shielding layer disposed on the side of the light-emitting layer close to the thin film transistor layer. The positions of the layer and the thin film transistors in the thin film transistor layer are set up and down to correspond vertically, so that the light directed to the thin film transistor is blocked by the first light shielding layer, thereby avoiding the thin film transistor from appearing due to light irradiation The problem of poor performance stability is conducive to improving the display quality of the display panel.
附图说明Description of the drawings
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to explain the embodiments or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only for application. For some embodiments, those of ordinary skill in the art can obtain other drawings based on these drawings without creative work.
图1是本申请实施例提供的显示面板的第一种结构示意图；FIG. 1 is a schematic diagram of a first structure of a display panel provided by an embodiment of the present application;
图2是本申请实施例提供的显示面板的第二种结构示意图；2 is a schematic diagram of a second structure of a display panel provided by an embodiment of the present application;
图3是本申请实施例提供的显示面板制作方法流程图；FIG. 3 is a flowchart of a method for manufacturing a display panel provided by an embodiment of the present application;
图3a是本申请实施例提供的显示面板制作方法中在衬底基板上制作缓冲层和第二遮光层后的结构示意图；3a is a schematic diagram of the structure after a buffer layer and a second light-shielding layer are fabricated on a base substrate in the method for fabricating a display panel provided by an embodiment of the present application;
图3b是本申请实施例提供的显示面板制作方法中在缓冲层上制作薄膜晶体管层后的结构示意图；3b is a schematic diagram of a structure after a thin film transistor layer is fabricated on the buffer layer in the method for fabricating a display panel provided by an embodiment of the present application;
图3c是本申请实施例提供的显示面板制作方法中在薄膜晶体管层上制作平坦层后的结构示意图；3c is a schematic diagram of the structure after a flat layer is formed on the thin film transistor layer in the display panel manufacturing method provided by the embodiment of the present application;
图3d是本申请实施例提供的显示面板制作方法中在平坦层上制作阳极材料层和第一遮光材料层后的结构示意图；3d is a schematic diagram of the structure after an anode material layer and a first light-shielding material layer are fabricated on the flat layer in the display panel fabrication method provided by the embodiment of the present application;
图3e是本申请实施例提供的显示面板制作方法中形成阳极层和第一中间遮光层后的结构示意图；3e is a schematic diagram of the structure after the anode layer and the first intermediate light-shielding layer are formed in the display panel manufacturing method provided by the embodiment of the present application;
图3f是本申请实施例提供的显示面板制作方法中形成第一遮光层后的结构示意图；3f is a schematic diagram of the structure after forming the first light shielding layer in the manufacturing method of the display panel provided by the embodiment of the present application;
图3g是本申请实施例提供的显示面板制作方法中制作完成所述发光层后的结构示意图。FIG. 3g is a schematic diagram of the structure after the light-emitting layer is fabricated in the method for fabricating a display panel provided by an embodiment of the present application.
本发明的实施方式Embodiments of the present invention
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。The description of the following embodiments refers to the attached drawings to illustrate specific embodiments that can be implemented in the present application. The directional terms mentioned in this application, such as [Up], [Down], [Front], [Back], [Left], [Right], [Inner], [Outer], [Side], etc., are for reference only The direction of the additional schema. Therefore, the directional terms used are used to illustrate and understand the application, rather than to limit the application. In the figure, units with similar structures are indicated by the same reference numerals.
本申请实施例提供一种显示面板，所述显示面板包括设置于发光层的靠近薄膜晶体管层一侧的第一遮光层，使所述第一遮光层与所述薄膜晶体管层中的薄膜晶体管的位置上下垂直对应，利用所述第一遮光层实现对射向所述薄膜晶体管的光线的遮挡，从而避免了所述薄膜晶体管因受光线照射而出现的性能稳定性变差的问题，有利于提高显示面板的显示品质。An embodiment of the present application provides a display panel that includes a first light-shielding layer disposed on a side of a light-emitting layer close to the thin film transistor layer, so that the first light-shielding layer and the thin film transistor in the thin film transistor layer The positions correspond vertically and vertically, and the first light-shielding layer is used to block the light directed to the thin film transistor, thereby avoiding the problem of poor performance stability of the thin film transistor due to the light exposure, which is beneficial to improve The display quality of the display panel.
如图1所示，是本申请实施例提供的显示面板的第一种结构示意图。所述显示面板上具有显示区域，至少在所述显示区域内，所述显示面板具有多层结构，所述显示面板的多层结构包括衬底基板10、设置于所述衬底基板10上的薄膜晶体管层20、以及设置于所述薄膜晶体管层20上的发光层30。需要说明的是，所述显示区域是所述显示面板上具有显示画面功能的区域，所述显示面板还可以包括设置于所述显示区域周围的非显示区域，所述非显示区域可以具有所述显示区域的部分层状结构；此外，图1仅示出了所述显示面板的部分显示区域的结构示意图，本领域技术人员可以通过相关文字描述和图1所示容易得出整个所述显示区域的结构特征。As shown in FIG. 1, it is a schematic diagram of the first structure of a display panel provided by an embodiment of the present application. The display panel has a display area, at least within the display area, the display panel has a multilayer structure, and the multilayer structure of the display panel includes a base substrate 10, The thin film transistor layer 20 and the light emitting layer 30 provided on the thin film transistor layer 20. It should be noted that the display area is an area on the display panel that has the function of displaying pictures, the display panel may also include a non-display area arranged around the display area, and the non-display area may have the Part of the layered structure of the display area; in addition, FIG. 1 only shows a schematic diagram of the structure of a part of the display area of the display panel, and those skilled in the art can easily derive the entire display area through the relevant text description and the display in FIG. 1 The structural characteristics.
所述衬底基板10可以由玻璃等硬质材料制作而成，也可以由聚酰亚胺等柔性材料制作而成。需要说明的是，所述衬底基板10是所述显示面板中各功能元件的基本支撑件，同时也是所述显示面板显示画面时的出光面。The base substrate 10 may be made of hard materials such as glass, or may be made of flexible materials such as polyimide. It should be noted that the base substrate 10 is a basic support for each functional element in the display panel, and is also a light-emitting surface when the display panel displays images.
所述薄膜晶体管层20设置于所述衬底基板10上，所述薄膜晶体管层20中设置有多个薄膜晶体管20a。可选地，所述衬底基板10与所述薄膜晶体管层20之间还设置有缓冲层40，所述缓冲层40由柔性有机材料制作而成，例如可以是聚酰亚胺等，所述缓冲层40用于缓解所述衬底基板10与所述薄膜晶体管层20之间的胀缩性能的差异。The thin film transistor layer 20 is disposed on the base substrate 10, and a plurality of thin film transistors 20 a are disposed in the thin film transistor layer 20. Optionally, a buffer layer 40 is further provided between the base substrate 10 and the thin film transistor layer 20. The buffer layer 40 is made of a flexible organic material, such as polyimide. The buffer layer 40 is used to relieve the difference in expansion and contraction performance between the base substrate 10 and the thin film transistor layer 20.
进一步地，所述薄膜晶体管层20包括设置于所述缓冲层40上的有源层22、设置于所述有源层22上的栅极绝缘层23、设置于所述栅极绝缘层23上的栅极24、设置于所述缓冲层40上并覆盖所述有源层22、所述栅极绝缘层23、所述栅极24的中间绝缘层26、以及设置于所述中间绝缘层26上的源漏极25，其中所述源漏极25通过设置于所述中间绝缘层26上的过孔与所述有源层22电性连接。需要说明的是，所述有源层22、所述栅极绝缘层23、所述栅极24、所述中间绝缘层26、及所述源漏极25共同构成所述薄膜晶体管20a。Further, the thin film transistor layer 20 includes an active layer 22 arranged on the buffer layer 40, a gate insulating layer 23 arranged on the active layer 22, and a gate insulating layer 23 arranged on the gate insulating layer 23 The gate 24, which is disposed on the buffer layer 40 and covers the active layer 22, the gate insulating layer 23, the intermediate insulating layer 26 of the gate 24, and the intermediate insulating layer 26 The source and drain 25 on the upper surface, wherein the source and drain 25 are electrically connected to the active layer 22 through a via hole disposed on the intermediate insulating layer 26. It should be noted that the active layer 22, the gate insulating layer 23, the gate 24, the intermediate insulating layer 26, and the source and drain 25 together constitute the thin film transistor 20a.
需要说明的是，所述薄膜晶体管层20的结构并不仅限图1所示的一种，本申请的另一实施例提供的显示面板还提供了所述薄膜晶体管层20的另一种结构，参考图2所示。在图2所示的实施例中，所述薄膜晶体管层20包括设置于所述缓冲层40上的有源层22、设置于所述有源层22上的栅极绝缘层23、设置于所述栅极绝缘层23上的栅极24和源漏极25、以及设置于所述缓冲层40上并覆盖所述有源层22、所述栅极绝缘层23、所述栅极24和所述源漏极25的绝缘过渡层27，其中所述源漏极25通过设置于所述栅极绝缘层23上的过孔与所述有源层22电性连接。所述有源层22、所述栅极绝缘层23、所述栅极24、及所述源漏极25共同构成所述薄膜晶体管20a。需要说明的是，图1所示的实施例提供的显示面板与图2所示的实施例提供的显示面板仅在所述薄膜晶体管层20的结构上存在差异，而在其它方面具有相同的结构特征。下面继续对图1所示的实施例提供的显示面板的结构进行说明。It should be noted that the structure of the thin film transistor layer 20 is not limited to the one shown in FIG. 1. The display panel provided by another embodiment of the present application also provides another structure of the thin film transistor layer 20. Refer to Figure 2. In the embodiment shown in FIG. 2, the thin film transistor layer 20 includes an active layer 22 disposed on the buffer layer 40, a gate insulating layer 23 disposed on the active layer 22, and The gate 24 and the source and drain 25 on the gate insulating layer 23, as well as the buffer layer 40 and covering the active layer 22, the gate insulating layer 23, the gate 24 and the In the insulating transition layer 27 of the source and drain 25, the source and drain 25 are electrically connected to the active layer 22 through a via provided on the gate insulating layer 23. The active layer 22, the gate insulating layer 23, the gate 24, and the source and drain 25 together constitute the thin film transistor 20a. It should be noted that the display panel provided by the embodiment shown in FIG. 1 and the display panel provided by the embodiment shown in FIG. 2 only differ in the structure of the thin film transistor layer 20, and have the same structure in other aspects. feature. The following continues to describe the structure of the display panel provided by the embodiment shown in FIG. 1.
可选地，所述缓冲层40上靠近所述衬底基板10的一侧设置有第一极板41和第二遮光层42，所述第二遮光层42设置于所述第一极板41上，所述源漏极25通过所述中间绝缘层26和所述缓冲层40上的过孔与所述第二遮光层42电性连接。所述第二遮光层42在所述薄膜晶体管层20上的垂直投影覆盖所述薄膜晶体管20a。所述第二遮光层42用于遮挡外界射向所述薄膜晶体管20a的光线，以避免外界光线影响所述薄膜晶体管20a的性能。Optionally, a first electrode plate 41 and a second light shielding layer 42 are provided on the side of the buffer layer 40 close to the base substrate 10, and the second light shielding layer 42 is provided on the first electrode plate 41. Above, the source and drain electrodes 25 are electrically connected to the second light-shielding layer 42 through the via holes on the intermediate insulating layer 26 and the buffer layer 40. The vertical projection of the second light shielding layer 42 on the thin film transistor layer 20 covers the thin film transistor 20a. The second light-shielding layer 42 is used to block external light that is directed to the thin film transistor 20a, so as to prevent external light from affecting the performance of the thin film transistor 20a.
可选地，所述缓冲层40上靠近所述薄膜晶体管层20的一侧设置有第二极板2。所述第一极板41与所述第二极板21之间通过所述缓冲层40电性绝缘，所述第一极板41与所述第二极板21形成存储电容，所述存储电容与所述薄膜晶体管20a在所述显示面板的厚度方向上错开设置。Optionally, a second electrode plate 2 is provided on the side of the buffer layer 40 close to the thin film transistor layer 20. The first electrode plate 41 and the second electrode plate 21 are electrically insulated by the buffer layer 40, the first electrode plate 41 and the second electrode plate 21 form a storage capacitor, and the storage capacitor The thin film transistor 20a is staggered in the thickness direction of the display panel.
所述发光层30设置于所述薄膜晶体管层20上，所述发光层30包括多个发光结构30a。可选地，所述发光层30与所述薄膜晶体管层20之间还设置有平坦层50，所述平坦层50用于在所述薄膜晶体管层20上形成平坦表面，以便于所述发光层30中的各元件的设置。The light-emitting layer 30 is disposed on the thin film transistor layer 20, and the light-emitting layer 30 includes a plurality of light-emitting structures 30a. Optionally, a flat layer 50 is further provided between the light-emitting layer 30 and the thin film transistor layer 20, and the flat layer 50 is used to form a flat surface on the thin film transistor layer 20 to facilitate the light-emitting layer The settings of each element in 30.
可选地，所述平坦层50中设置有彩色滤光层51，所述彩色滤光层51与所述发光结构30a在所述显示面板的厚度方向上的位置垂直对应，从而使所述发光结构30a发出的光线经所述彩色滤光层51过滤而转化为单色光。可选地，所述彩色滤光层51包括红色滤光块51a、绿色滤光块51b和蓝色滤光块51c，从而使所述发光结构30a发出的光线经所述彩色滤光层51过滤后而转化为红、绿、蓝三种单色光。Optionally, a color filter layer 51 is provided in the flat layer 50, and the color filter layer 51 corresponds vertically to the position of the light emitting structure 30a in the thickness direction of the display panel, so that the light emitting The light emitted by the structure 30a is filtered by the color filter layer 51 and converted into monochromatic light. Optionally, the color filter layer 51 includes a red filter block 51a, a green filter block 51b, and a blue filter block 51c, so that the light emitted by the light-emitting structure 30a is filtered by the color filter layer 51 Then it is transformed into three monochromatic lights of red, green and blue.
所述发光层30包括像素定义层33，所述像素定义层33上设置有多个通孔，所述发光结构30a设置于所述通孔中。具体地，所述发光结构30a包括设置于所述平坦层50上的阳极层31、设置于所述阳极层31上的有机功能层34、以及设置于所述有机功能层34上的阴极层35。需要说明的是，仅在所述像素定义层的通孔内，所述阳极层31、所述有机功能层34和所述阴极层35依次直接层叠相连，从而在该区域形成所述发光结构30a；所述阳极层31、所述有机功能层34和所述阴极层35分别向外延伸而不直接接触的区域无法发光，因而不形成发光结构。The light emitting layer 30 includes a pixel defining layer 33, a plurality of through holes are arranged on the pixel defining layer 33, and the light emitting structure 30a is arranged in the through holes. Specifically, the light emitting structure 30a includes an anode layer 31 disposed on the flat layer 50, an organic functional layer 34 disposed on the anode layer 31, and a cathode layer 35 disposed on the organic functional layer 34 . It should be noted that only in the through holes of the pixel definition layer, the anode layer 31, the organic functional layer 34, and the cathode layer 35 are directly stacked and connected in sequence, thereby forming the light-emitting structure 30a in this area. The areas of the anode layer 31, the organic functional layer 34 and the cathode layer 35 respectively extending outward and not in direct contact cannot emit light, and therefore do not form a light emitting structure.
所述阳极层31通过所述平坦层50上的过孔与所述薄膜晶体管20a电性连接，且所述发光结构30a与所述薄膜晶体管20a在所述显示面板的厚度方向上错开设置，从而使所述发光结构30a发出的光线不会直接射向所述薄膜晶体管20a。The anode layer 31 is electrically connected to the thin film transistor 20a through the via hole on the flat layer 50, and the light emitting structure 30a and the thin film transistor 20a are staggered in the thickness direction of the display panel, thereby The light emitted by the light-emitting structure 30a is prevented from directly radiating to the thin film transistor 20a.
需要说明的是，所述显示面板的厚度方向是指：由所述衬底基板10垂直指向所述发光层30的方向，或由所述发光层30垂直指向所述衬底基板10的方向。It should be noted that the thickness direction of the display panel refers to a direction perpendicular to the light-emitting layer 30 from the base substrate 10, or a direction perpendicular to the base substrate 10 from the light-emitting layer 30.
进一步地，所述发光层30的靠近所述薄膜晶体管层20的一侧设置有第一遮光层32，所述第一遮光层32在所述薄膜晶体管层20上的垂直投影覆盖所述薄膜晶体管20a。所述第一遮光层32用于遮挡由所述发光结构30a发出，并经所述阴极35反射而射向所述薄膜晶体管20a的光线，避免该反射光影响所述薄膜晶体管20a的性能。Further, the light-emitting layer 30 is provided with a first light-shielding layer 32 on the side close to the thin film transistor layer 20, and the vertical projection of the first light-shielding layer 32 on the thin film transistor layer 20 covers the thin film transistor layer 20. 20a. The first light shielding layer 32 is used to shield the light emitted by the light-emitting structure 30a and reflected by the cathode 35 to the thin film transistor 20a, so as to prevent the reflected light from affecting the performance of the thin film transistor 20a.
进一步地，所述第一遮光层32设置于所述阳极层31上，且与所述发光结构30a在所述显示面板的厚度方向上错开设置。需要说明的是，通过将所述第一遮光层32设置于所述阳极层31上，使所述第一遮光层32嵌入所述发光层30的整体结构中，有利于简化所述显示面板结构上的复杂度和制造工艺的复杂度。Further, the first light shielding layer 32 is disposed on the anode layer 31, and is staggered from the light emitting structure 30a in the thickness direction of the display panel. It should be noted that by disposing the first light-shielding layer 32 on the anode layer 31, the first light-shielding layer 32 is embedded in the overall structure of the light-emitting layer 30, which is beneficial to simplify the structure of the display panel. The complexity of the above and the complexity of the manufacturing process.
可选地，所述第一遮光层32的制作材料可以是具有吸光作用的金属材料或非金属材料，也可以是具有反光作用的金属材料或非金属材料，以达到阻隔光线穿透的目的。Optionally, the first light-shielding layer 32 may be made of a metal material or a non-metal material with a light-absorbing effect, or a metal material or a non-metal material with a light-reflecting effect, so as to achieve the purpose of blocking light penetration.
综上所述，本申请实施例提供的显示面板包括设置于发光层的靠近薄膜晶体管层一侧的第一遮光层，通过将所述第一遮光层与所述薄膜晶体管层中的薄膜晶体管的位置设置为上下垂直对应，使射向所述薄膜晶体管的光线被所述第一遮光层遮挡，从而避免了所述薄膜晶体管因受光线照射而出现的性能稳定性变差的问题，有利于提高显示面板的显示品质。In summary, the display panel provided by the embodiments of the present application includes a first light-shielding layer disposed on the side of the light-emitting layer close to the thin film transistor layer. The position is set up and down to correspond vertically, so that the light directed to the thin film transistor is blocked by the first light-shielding layer, thereby avoiding the problem of poor performance stability of the thin film transistor due to light irradiation, which is beneficial to improve The display quality of the display panel.
本申请另一实施例还提供了一种显示面板制作方法，如图3所示，所述显示面板制作方法包括以下步骤：Another embodiment of the present application also provides a method for manufacturing a display panel. As shown in FIG. 3, the method for manufacturing a display panel includes the following steps:
步骤S101、参考图3a所示，提供一衬底基板10，在所述衬底基板上制作第二遮光层42。Step S101, referring to FIG. 3a, a base substrate 10 is provided, and a second light-shielding layer 42 is formed on the base substrate.
可选地，所述步骤S101可以具体包括以下操作：在所述衬底基板10上制作第一极板41；在所述第一极板41上制作所述第二遮光层42；在所述衬底基板40上制作覆盖所述第一极板41和所述第二遮光层42的缓冲层40。Optionally, the step S101 may specifically include the following operations: fabricating a first electrode plate 41 on the base substrate 10; fabricating the second light-shielding layer 42 on the first electrode plate 41; A buffer layer 40 covering the first electrode plate 41 and the second light shielding layer 42 is fabricated on the base substrate 40.
进一步地，制作所述第一极板41和所述第二遮光层42的方法可以包括：通过气相沉积工艺或涂布工艺成膜后，再利用光罩工艺进行刻蚀的操作。Further, the method of manufacturing the first electrode plate 41 and the second light-shielding layer 42 may include: after forming a film through a vapor deposition process or a coating process, and then using a photomask process to perform an etching operation.
步骤S102、参考图3b所示，在所述衬底基板10上制作薄膜晶体管层20，所述薄膜晶体管层20覆盖所述第二遮光层42，所述薄膜晶体管层20包括多个薄膜晶体管20a，所述薄膜晶体管20a与所述第二遮光层42在所述显示面板的厚度方向上垂直对应。Step S102. As shown in FIG. 3b, a thin film transistor layer 20 is fabricated on the base substrate 10. The thin film transistor layer 20 covers the second light shielding layer 42, and the thin film transistor layer 20 includes a plurality of thin film transistors 20a. The thin film transistor 20a and the second light-shielding layer 42 vertically correspond to the thickness direction of the display panel.
可选地，所述衬底基板10上设置有所述缓冲层40，所述薄膜晶体管层20制作于所述缓冲层40上。Optionally, the buffer layer 40 is provided on the base substrate 10, and the thin film transistor layer 20 is fabricated on the buffer layer 40.
进一步地，所述薄膜晶体管层20包括设置于所述缓冲层40上的有源层22、设置于所述有源层22上的栅极绝缘层23、设置于所述栅极绝缘层23上的栅极24、设置于所述缓冲层40上并覆盖所述有源层22、所述栅极绝缘层23、所述栅极24的中间绝缘层26、以及设置于所述中间绝缘层26上的源漏极25，其中所述源漏极25通过设置于所述中间绝缘层26上的过孔与所述有源层22电性连接。需要说明的是，所述有源层22、所述栅极绝缘层23、所述栅极24、所述中间绝缘层26、及所述源漏极25共同构成所述薄膜晶体管20a。Further, the thin film transistor layer 20 includes an active layer 22 arranged on the buffer layer 40, a gate insulating layer 23 arranged on the active layer 22, and a gate insulating layer 23 arranged on the gate insulating layer 23 The gate 24, which is disposed on the buffer layer 40 and covers the active layer 22, the gate insulating layer 23, the intermediate insulating layer 26 of the gate 24, and the intermediate insulating layer 26 The source and drain 25 on the upper surface, wherein the source and drain 25 are electrically connected to the active layer 22 through a via hole disposed on the intermediate insulating layer 26. It should be noted that the active layer 22, the gate insulating layer 23, the gate 24, the intermediate insulating layer 26, and the source and drain 25 together constitute the thin film transistor 20a.
进一步地，制作所述薄膜晶体管层20之前，或与制作所述薄膜晶体管层20同时，在所述缓冲层40上制作第二极板21。所述第一极板41与所述第二极板21共同构成存储电容。Further, before the thin film transistor layer 20 is fabricated, or at the same time as the thin film transistor layer 20 is fabricated, a second electrode plate 21 is fabricated on the buffer layer 40. The first electrode plate 41 and the second electrode plate 21 together form a storage capacitor.
进一步地，参考图3c所示，制作完成所述薄膜晶体管层20之后，在所述薄膜晶体管层20上制作平坦层50，所述平坦层50用于在所述薄膜晶体管层20上形成平整表面，以便于后续操作。Further, referring to FIG. 3c, after the thin film transistor layer 20 is fabricated, a flat layer 50 is fabricated on the thin film transistor layer 20, and the flat layer 50 is used to form a flat surface on the thin film transistor layer 20 To facilitate subsequent operations.
步骤S103、参考图3g所示，在所述薄膜晶体管层20上制作发光层30，所述发光层30包括靠近所述薄膜晶体管层20一侧的第一遮光层32、及多个发光结构30a，所述发光结构30a与所述薄膜晶体管20a在所述显示面板的厚度方向上相错开，所述第一遮光层32在所述薄膜晶体管层20上的垂直投影覆盖所述薄膜晶体管20a。Step S103. As shown in FIG. 3g, a light-emitting layer 30 is fabricated on the thin film transistor layer 20. The light-emitting layer 30 includes a first light-shielding layer 32 on the side close to the thin film transistor layer 20 and a plurality of light-emitting structures 30a. The light emitting structure 30a and the thin film transistor 20a are staggered in the thickness direction of the display panel, and the vertical projection of the first light shielding layer 32 on the thin film transistor layer 20 covers the thin film transistor 20a.
可选地，所述薄膜晶体管层20上设置有所述平坦层50，所述发光层30制作于所述平坦层50上。Optionally, the flat layer 50 is provided on the thin film transistor layer 20, and the light-emitting layer 30 is fabricated on the flat layer 50.
进一步地，在所述薄膜晶体管层20上制作所述发光层30的方法包括以下步骤：Further, the method of fabricating the light-emitting layer 30 on the thin film transistor layer 20 includes the following steps:
在所述薄膜晶体管层20或所述平坦层50上制作阳极层31；Forming an anode layer 31 on the thin film transistor layer 20 or the flat layer 50;
在所述阳极层31上制作所述第一遮光层32，所述第一遮光层32在所述薄膜晶体管层20上的垂直投影覆盖所述薄膜晶体管20a；Forming the first light shielding layer 32 on the anode layer 31, and the vertical projection of the first light shielding layer 32 on the thin film transistor layer 20 covers the thin film transistor 20a;
在所述薄膜晶体管层20或所述平坦层50上制作覆盖所述阳极层31及所述第一遮光层32的像素定义层33；Fabricating a pixel definition layer 33 covering the anode layer 31 and the first light shielding layer 32 on the thin film transistor layer 20 or the flat layer 50;
在所述像素定义层33上形成通孔331，以暴露部分所述阳极层31；Forming a through hole 331 on the pixel defining layer 33 to expose a part of the anode layer 31;
在所述像素定义层33上及所述通孔331内制作有机功能层34，位于所述通孔331内的所述有机功能层34与所述阳极层31直接接触；Forming an organic functional layer 34 on the pixel defining layer 33 and in the through hole 331, and the organic functional layer 34 in the through hole 331 is in direct contact with the anode layer 31;
在所述像素定义层33上及所述通孔331内制作阴极层35，所述阴极层35覆盖所述有机功能层34，并且至少在所述通孔331内所述阴极层35与所述有机功能层34直接接触。A cathode layer 35 is formed on the pixel defining layer 33 and in the through hole 331, the cathode layer 35 covers the organic functional layer 34, and at least the cathode layer 35 and the through hole 331 The organic functional layer 34 is in direct contact.
需要说明的是，仅在所述像素定义层33的通孔331内，所述阳极层31、所述有机功能层34和所述阴极层35依次直接层叠相连，从而在该区域形成所述发光结构30a；所述阳极层31、所述有机功能层34和所述阴极层35分别向外延伸而不直接接触的区域无法发光，因而不形成发光结构。It should be noted that only in the through hole 331 of the pixel definition layer 33, the anode layer 31, the organic functional layer 34, and the cathode layer 35 are directly stacked and connected in sequence, thereby forming the light emission in this area. Structure 30a; the areas of the anode layer 31, the organic functional layer 34 and the cathode layer 35 respectively extending outward and not in direct contact cannot emit light, and therefore do not form a light emitting structure.
进一步地，制作所述阳极层31和所述第一遮光层32的方法包括以下步骤：Further, the method of manufacturing the anode layer 31 and the first light-shielding layer 32 includes the following steps:
参考图3d所示，在所述薄膜晶体管层20或所述平坦层50上通过涂布工艺或气相沉积工艺或喷墨打印工艺形成阳极材料层31a；在所述阳极材料层31a上通过涂布工艺或气相沉积工艺或喷墨打印工艺形成第一遮光材料层32a。Referring to FIG. 3d, an anode material layer 31a is formed on the thin film transistor layer 20 or the flat layer 50 by a coating process or a vapor deposition process or an inkjet printing process; on the anode material layer 31a, an anode material layer 31a is formed by coating A process or a vapor deposition process or an inkjet printing process forms the first light-shielding material layer 32a.
参考图3d和图3e所示，利用第一半色调掩膜板对所述阳极材料层31a和所述第一遮光材料层32a共同进行光罩制程，以形成所述阳极层31及第一中间遮光层32b。Referring to FIGS. 3d and 3e, a first halftone mask is used to jointly perform a photomask process on the anode material layer 31a and the first light-shielding material layer 32a to form the anode layer 31 and the first intermediate layer. Light shielding layer 32b.
参考图3e和图3f所示，利用第二半色调掩膜板对所述第一中间遮光层32b进行光罩制程，以形成所述第一遮光层32。Referring to FIG. 3e and FIG. 3f, a second halftone mask is used to perform a photomask process on the first intermediate light-shielding layer 32b to form the first light-shielding layer 32.
进一步地，参考图3g所示，在所述薄膜晶体管层20上制作所述发光层30之前，还包括以下步骤：Further, referring to FIG. 3g, before forming the light-emitting layer 30 on the thin film transistor layer 20, the following steps are further included:
在所述薄膜晶体管层20上制作彩色滤光层51，使所述彩色滤光层51与所述薄膜晶体管20a所述显示面板的厚度方向上相错开，且使所述彩色滤光层51与之后制作的所述发光结构30a在所述显示面板的厚度方向上的位置相对应。A color filter layer 51 is formed on the thin film transistor layer 20 so that the color filter layer 51 and the thin film transistor 20a are staggered in the thickness direction of the display panel, and the color filter layer 51 and The position of the light emitting structure 30a produced later in the thickness direction of the display panel corresponds to that.
可选地，所述薄膜晶体管层20与所述发光层30之间设置有所述平坦层50，所述彩色滤光层51设置于所述平坦层50中。Optionally, the flat layer 50 is provided between the thin film transistor layer 20 and the light-emitting layer 30, and the color filter layer 51 is provided in the flat layer 50.
可选地，所述彩色滤光层51包括红色滤光块51a、绿色滤光块51b和蓝色滤光块51c，从而使所述发光结构30a发出的光线经所述彩色滤光层51过滤后而转化为红、绿、蓝三种单色光。Optionally, the color filter layer 51 includes a red filter block 51a, a green filter block 51b, and a blue filter block 51c, so that the light emitted by the light-emitting structure 30a is filtered by the color filter layer 51 Then it is transformed into three monochromatic lights of red, green and blue.
进一步地，所述显示面板制作方法还包括在所述发光层30上制作薄膜封装层的步骤。所述薄膜封装层用于防止外界气体和水分侵蚀所述显示面板的内部结构。Further, the manufacturing method of the display panel further includes a step of manufacturing a thin-film encapsulation layer on the light-emitting layer 30. The thin film encapsulation layer is used to prevent external air and moisture from corroding the internal structure of the display panel.
综上所述，本申请实施例提供的显示面板制作方法，包括在发光层的靠近薄膜晶体管层的一侧制作第一遮光层的步骤，并使所述第一遮光层与所述薄膜晶体管层中的薄膜晶体管的位置设置为上下垂直对应，进而使射向所述薄膜晶体管的光线被所述第一遮光层遮挡，避免了所述薄膜晶体管因受光线照射而出现的性能稳定性变差的问题，有利于提高显示面板的显示品质。In summary, the manufacturing method of the display panel provided by the embodiments of the present application includes the step of fabricating a first light-shielding layer on the side of the light-emitting layer close to the thin-film transistor layer, and making the first light-shielding layer and the thin-film transistor layer The position of the thin film transistor in the TFT is set to correspond vertically, so that the light directed to the thin film transistor is blocked by the first light-shielding layer, which avoids the deterioration of the performance stability of the thin film transistor due to light irradiation. The problem is conducive to improving the display quality of the display panel.
需要说明的是，虽然本申请以具体实施例揭露如上，但上述实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。It should be noted that although the application is disclosed as above in specific embodiments, the above-mentioned embodiments are not intended to limit the application, and those of ordinary skill in the art can make various modifications without departing from the spirit and scope of the application. Therefore, the protection scope of this application is subject to the scope defined by the claims.

Claims (20)

  1. 一种显示面板，所述显示面板上具有显示区域，至少在所述显示区域内，所述显示面板包括：A display panel, the display panel has a display area, at least within the display area, the display panel includes:
    衬底基板；Base substrate
    薄膜晶体管层，设置于所述衬底基板上，所述薄膜晶体管层中设置有多个薄膜晶体管；A thin film transistor layer arranged on the base substrate, and a plurality of thin film transistors are arranged in the thin film transistor layer;
    发光层，设置于所述薄膜晶体管层上，所述发光层包括多个发光结构，所述发光结构与所述薄膜晶体管电性连接，且所述发光结构与所述薄膜晶体管在所述显示面板的厚度方向上错开设置；The light-emitting layer is disposed on the thin film transistor layer, the light-emitting layer includes a plurality of light-emitting structures, the light-emitting structure is electrically connected to the thin film transistor, and the light-emitting structure and the thin film transistor are in the display panel Staggered setting in the thickness direction;
    第一遮光层，设置于所述发光层的靠近所述薄膜晶体管层的一侧，所述第一遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。The first light-shielding layer is arranged on a side of the light-emitting layer close to the thin film transistor layer, and the vertical projection of the first light-shielding layer on the thin film transistor layer covers the thin film transistor.
  2. 根据权利要求1所述的显示面板，其中，所述发光结构包括：设置于所述薄膜晶体管层上的阳极层、设置于所述阳极层上的有机功能层、以及设置于所述有机功能层上的阴极层；The display panel of claim 1, wherein the light emitting structure comprises: an anode layer provided on the thin film transistor layer, an organic functional layer provided on the anode layer, and an organic functional layer provided on the organic functional layer On the cathode layer;
    所述阳极层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。The vertical projection of the anode layer on the thin film transistor layer covers the thin film transistor.
  3. 根据权利要求2所述的显示面板，其中，所述第一遮光层设置于所述阳极层上。The display panel according to claim 2, wherein the first light shielding layer is disposed on the anode layer.
  4. 根据权利要求2所述的显示面板，其中，所述发光层还包括像素定义层，所述像素定义层上设置有多个通孔，所述发光结构设置于所述通孔中。3. The display panel according to claim 2, wherein the light-emitting layer further comprises a pixel definition layer, a plurality of through holes are arranged on the pixel definition layer, and the light-emitting structure is arranged in the through holes.
  5. 根据权利要求1所述的显示面板，其中，所述第一遮光层与所述发光结构在所述显示面板的厚度方向上错开设置。The display panel of claim 1, wherein the first light-shielding layer and the light-emitting structure are staggered in the thickness direction of the display panel.
  6. 根据权利要求1所述的显示面板，其中，所述衬底基板与所述薄膜晶体管层之间还设置有第二遮光层，所述第二遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。The display panel according to claim 1, wherein a second light shielding layer is further provided between the base substrate and the thin film transistor layer, and the vertical projection of the second light shielding layer on the thin film transistor layer covers The thin film transistor.
  7. 根据权利要求6所述的显示面板，其中，所述衬底基板与所述薄膜晶体管层之间还设置有缓冲层，所述第二遮光结构设置于所述缓冲层中。7. The display panel of claim 6, wherein a buffer layer is further provided between the base substrate and the thin film transistor layer, and the second light-shielding structure is provided in the buffer layer.
  8. 根据权利要求7所述的显示面板，其中，在所述缓冲层靠近所述衬底基板的一侧和所述缓冲层靠近所述薄膜晶体管层的一侧分别设置存储电容的相对两极，且所述存储电容与所述发光结构在所述显示面板的厚度方向上的位置垂直对应。7. The display panel according to claim 7, wherein opposite electrodes of a storage capacitor are respectively provided on a side of the buffer layer close to the base substrate and a side of the buffer layer close to the thin film transistor layer, and The storage capacitor corresponds vertically to the position of the light-emitting structure in the thickness direction of the display panel.
  9. 根据权利要求1所述的显示面板，其中，所述显示面板还包括设置于所述薄膜晶体管层与所述发光层之间的彩色滤光层，所述彩色滤光层与所述发光结构在所述显示面板的厚度方向上的位置垂直对应。The display panel according to claim 1, wherein the display panel further comprises a color filter layer disposed between the thin film transistor layer and the light-emitting layer, and the color filter layer and the light-emitting structure are in contact with each other. The position in the thickness direction of the display panel corresponds vertically.
  10. 根据权利要求9所述的显示面板，其中，所述薄膜晶体管层与所述发光层之间设置有平坦层，所述彩色滤光层设置于所述平坦层中。9. The display panel of claim 9, wherein a flat layer is provided between the thin film transistor layer and the light-emitting layer, and the color filter layer is provided in the flat layer.
  11. 根据权利要求2所述的显示面板，其中，所述薄膜晶体管包括有源层、栅极绝缘层、栅极、中间绝缘层、及源漏极，所述阳极层与所述源漏极电性连接。3. The display panel of claim 2, wherein the thin film transistor comprises an active layer, a gate insulating layer, a gate, an intermediate insulating layer, and a source and drain, and the anode layer is electrically connected to the source and drain. connect.
  12. 一种显示面板制作方法，其包括以下步骤：A method for manufacturing a display panel includes the following steps:
    提供一衬底基板，在所述衬底基板上制作第二遮光层；Providing a base substrate, and fabricating a second light-shielding layer on the base substrate;
    在所述衬底基板上制作薄膜晶体管层，所述薄膜晶体管层覆盖所述第二遮光层，所述薄膜晶体管层包括多个薄膜晶体管，所述薄膜晶体管与所述第二遮光层在所述显示面板的厚度方向上垂直对应；A thin film transistor layer is fabricated on the base substrate, the thin film transistor layer covers the second light shielding layer, the thin film transistor layer includes a plurality of thin film transistors, and the thin film transistors and the second light shielding layer are in the Corresponding vertically in the thickness direction of the display panel;
    在所述薄膜晶体管层上制作发光层，所述发光层包括靠近所述薄膜晶体管层一侧的第一遮光层、及多个发光结构，所述发光结构与所述薄膜晶体管在所述显示面板的厚度方向上相错开，所述第一遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。A light-emitting layer is fabricated on the thin-film transistor layer, the light-emitting layer includes a first light-shielding layer on a side close to the thin-film transistor layer, and a plurality of light-emitting structures, and the light-emitting structure and the thin-film transistor are in the display panel The thickness direction is staggered, and the vertical projection of the first light shielding layer on the thin film transistor layer covers the thin film transistor.
  13. 根据权利要求12所述的显示面板制作方法，其中，在所述衬底基板上制作所述第二遮光层的步骤包括：The method for manufacturing a display panel according to claim 12, wherein the step of manufacturing the second light-shielding layer on the base substrate comprises:
    在所述衬底基板上制作第一极板；Fabricating a first electrode plate on the base substrate;
    在所述第一极板上制作所述第二遮光层；Fabricating the second light-shielding layer on the first electrode plate;
    在所述衬底基板上制作覆盖所述第一极板和所述第二遮光层的缓冲层。A buffer layer covering the first electrode plate and the second light shielding layer is fabricated on the base substrate.
  14. 根据权利要求13所述的显示面板制作方法，其中，制作所述薄膜晶体管层之前还包括以下步骤：13. The method for manufacturing a display panel according to claim 13, wherein the method further comprises the following steps before the thin film transistor layer is manufactured:
    在所述缓冲层上制作第二极板，所述第一极板与所述第二极板共同构成存储电容。A second electrode plate is fabricated on the buffer layer, and the first electrode plate and the second electrode plate together form a storage capacitor.
  15. 根据权利要求12所述显示面板制作方法，其中，在所述薄膜晶体管层上制作所述发光层的步骤包括：The method for manufacturing the display panel according to claim 12, wherein the step of manufacturing the light-emitting layer on the thin film transistor layer comprises:
    在所述薄膜晶体管层上制作阳极层；Forming an anode layer on the thin film transistor layer;
    在所述阳极层上制作所述第一遮光层，所述第一遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管；Forming the first light-shielding layer on the anode layer, and a vertical projection of the first light-shielding layer on the thin film transistor layer covers the thin film transistor;
    在所述薄膜晶体管层上制作覆盖所述阳极层及所述第一遮光层的像素定义层；Fabricating a pixel definition layer covering the anode layer and the first light shielding layer on the thin film transistor layer;
    在所述像素定义层上形成通孔，以暴露部分所述阳极层；Forming a through hole on the pixel defining layer to expose a part of the anode layer;
    在所述像素定义层上及所述通孔内制作有机功能层，位于所述通孔内的所述有机功能层与所述阳极层直接接触；Fabricating an organic functional layer on the pixel definition layer and in the through hole, and the organic functional layer in the through hole is in direct contact with the anode layer;
    在所述像素定义层上及所述通孔内制作阴极层，所述阴极层覆盖所述有机功能层，并且至少在所述通孔内所述阴极层与所述有机功能层直接接触。A cathode layer is formed on the pixel definition layer and in the through hole, the cathode layer covers the organic functional layer, and at least in the through hole the cathode layer is in direct contact with the organic functional layer.
  16. 根据权利要求15所述显示面板制作方法，其中，制作所述阳极层和所述第一遮光层的方法包括以下步骤：15. The method of manufacturing the display panel according to claim 15, wherein the method of manufacturing the anode layer and the first light-shielding layer comprises the following steps:
    在所述薄膜晶体管层上通过涂布工艺或气相沉积工艺或喷墨打印工艺形成阳极材料层；Forming an anode material layer on the thin film transistor layer through a coating process, a vapor deposition process, or an inkjet printing process;
    在所述阳极材料层上通过涂布工艺或气相沉积工艺或喷墨打印工艺形成第一遮光材料层；Forming a first light-shielding material layer on the anode material layer through a coating process, a vapor deposition process, or an inkjet printing process;
    利用第一半色调掩膜板对所述阳极材料层和所述第一遮光材料层共同进行光罩制程，以形成所述阳极层及第一中间遮光层；Using a first halftone mask to jointly perform a photomask process on the anode material layer and the first shading material layer to form the anode layer and the first intermediate shading layer;
    利用第二半色调掩膜板对所述第一中间遮光层进行光罩制程，以形成所述第一遮光层。A second half-tone mask is used to perform a photomask process on the first intermediate light-shielding layer to form the first light-shielding layer.
  17. 根据权利要求12所述显示面板制作方法，其中，在所述薄膜晶体管层上制作所述发光层之前，还包括以下步骤：12. The method for manufacturing a display panel according to claim 12, wherein before the light-emitting layer is formed on the thin film transistor layer, the method further comprises the following steps:
    在所述薄膜晶体管层上制作彩色滤光层，使所述彩色滤光层与所述薄膜晶体管在所述显示面板的厚度方向上相错开，且使所述彩色滤光层与之后制作的所述发光结构在所述显示面板的厚度方向上的位置相对应。A color filter layer is fabricated on the thin film transistor layer, the color filter layer and the thin film transistor are staggered in the thickness direction of the display panel, and the color filter layer is made to be different from the one produced later. The position of the light-emitting structure in the thickness direction of the display panel corresponds.
  18. 根据权利要求12所述显示面板制作方法，其中，还包括在所述发光层上制作薄膜封装层的步骤。The method for manufacturing the display panel according to claim 12, further comprising a step of manufacturing a thin film encapsulation layer on the light-emitting layer.
  19. 根据权利要求12所述显示面板制作方法，其中，所述第一遮光层和所述第二遮光层由吸光材料或反光材料制作而成。12. The method for manufacturing a display panel according to claim 12, wherein the first light-shielding layer and the second light-shielding layer are made of light-absorbing materials or light-reflecting materials.
  20. 一种显示面板，所述显示面板上具有显示区域，至少在所述显示区域内，所述显示面板包括：A display panel, the display panel has a display area, at least within the display area, the display panel includes:
    衬底基板；Base substrate
    第二遮光层，设置于所述衬底基板上；The second light-shielding layer is arranged on the base substrate;
    薄膜晶体管层，设置于所述第二遮光层上，所述薄膜晶体管层中设置有多个薄膜晶体管，所述薄膜晶体管与所述第二遮光层在所述显示面板的厚度方向上垂直对应；A thin film transistor layer disposed on the second light shielding layer, a plurality of thin film transistors are disposed in the thin film transistor layer, and the thin film transistors and the second light shielding layer vertically correspond to the second light shielding layer in the thickness direction of the display panel;
    发光层，设置于所述薄膜晶体管层上，所述发光层包括由阳极层、有机功能层和阴极层堆叠而成的多个发光结构，所述阳极层与所述薄膜晶体管电性连接，所述发光结构与所述薄膜晶体管在所述显示面板的厚度方向上错开设置；以及The light-emitting layer is arranged on the thin film transistor layer, the light-emitting layer includes a plurality of light-emitting structures formed by stacking an anode layer, an organic functional layer and a cathode layer, and the anode layer is electrically connected to the thin film transistor. The light emitting structure and the thin film transistor are staggered in the thickness direction of the display panel; and
    第一遮光层，设置于所述阳极层上，所述第一遮光层在所述薄膜晶体管层上的垂直投影覆盖所述薄膜晶体管。The first light-shielding layer is arranged on the anode layer, and the vertical projection of the first light-shielding layer on the thin film transistor layer covers the thin film transistor.
PCT/CN2020/132827 2020-05-27 2020-11-30 Display panel and display panel manufactoring method WO2021238129A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010461808.5A CN111613654B (en) 2020-05-27 2020-05-27 Display panel and manufacturing method thereof
CN202010461808.5 2020-05-27

Publications (1)

Publication Number Publication Date
WO2021238129A1 true WO2021238129A1 (en) 2021-12-02

Family

ID=72201365

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/132827 WO2021238129A1 (en) 2020-05-27 2020-11-30 Display panel and display panel manufactoring method

Country Status (2)

Country Link
CN (1) CN111613654B (en)
WO (1) WO2021238129A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111613654B (en) * 2020-05-27 2023-11-28 深圳市华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof
CN112164708B (en) 2020-09-16 2022-07-29 深圳市华星光电半导体显示技术有限公司 OLED display panel preparation method and OLED display panel
CN112436049B (en) * 2020-12-09 2024-02-23 维信诺科技股份有限公司 Display panel preparation method and display panel
EP4141946A4 (en) * 2021-02-07 2023-10-04 BOE Technology Group Co., Ltd. Display substrate, display panel, and display apparatus
CN113097268B (en) * 2021-03-30 2024-04-12 上海天马微电子有限公司 Display panel and electronic equipment
CN114823825A (en) * 2022-04-12 2022-07-29 武汉华星光电半导体显示技术有限公司 Display panel and display device
CN115394857A (en) * 2022-08-16 2022-11-25 武汉华星光电技术有限公司 Thin film transistor of vertical structure and electronic device
CN115802821B (en) * 2022-12-23 2024-01-12 惠科股份有限公司 Display panel, manufacturing method thereof and repairing method of display panel

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100221855A1 (en) * 2002-06-27 2010-09-02 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Device and Method of Manufacturing the Same
CN102386204A (en) * 2010-09-06 2012-03-21 三星移动显示器株式会社 Organic light-emitting display apparatus and method of manufacturing the same
CN103247659A (en) * 2012-02-09 2013-08-14 乐金显示有限公司 Organic light emitting display device and method for fabricating the same
CN103762223A (en) * 2013-12-31 2014-04-30 深圳市华星光电技术有限公司 Light-emitting device with oxide thin-film transistor and manufacturing method thereof
CN107170762A (en) * 2017-06-16 2017-09-15 武汉华星光电半导体显示技术有限公司 OLED display panel and preparation method thereof
CN111613654A (en) * 2020-05-27 2020-09-01 深圳市华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000661B (en) * 2012-12-12 2015-12-23 京东方科技集团股份有限公司 Array base palte and preparation method thereof, display unit
KR102448065B1 (en) * 2017-11-30 2022-09-28 엘지디스플레이 주식회사 Organic light emitting display device
CN109585520B (en) * 2018-12-28 2024-05-14 深圳市华星光电半导体显示技术有限公司 Display panel, display module and electronic device
CN110112183A (en) * 2019-04-12 2019-08-09 深圳市华星光电半导体显示技术有限公司 Double face display panel and preparation method thereof
CN110098235B (en) * 2019-05-08 2021-09-24 深圳市华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof
CN110610964A (en) * 2019-08-22 2019-12-24 深圳市华星光电半导体显示技术有限公司 Organic light emitting display panel and method of manufacturing the same
CN110400811B (en) * 2019-08-30 2021-12-17 合肥鑫晟光电科技有限公司 Array substrate and display device
CN110943112B (en) * 2019-11-26 2022-07-29 深圳市华星光电半导体显示技术有限公司 Array substrate, preparation method thereof and display panel

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100221855A1 (en) * 2002-06-27 2010-09-02 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Device and Method of Manufacturing the Same
CN102386204A (en) * 2010-09-06 2012-03-21 三星移动显示器株式会社 Organic light-emitting display apparatus and method of manufacturing the same
CN103247659A (en) * 2012-02-09 2013-08-14 乐金显示有限公司 Organic light emitting display device and method for fabricating the same
CN103762223A (en) * 2013-12-31 2014-04-30 深圳市华星光电技术有限公司 Light-emitting device with oxide thin-film transistor and manufacturing method thereof
CN107170762A (en) * 2017-06-16 2017-09-15 武汉华星光电半导体显示技术有限公司 OLED display panel and preparation method thereof
CN111613654A (en) * 2020-05-27 2020-09-01 深圳市华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof

Also Published As

Publication number Publication date
CN111613654A (en) 2020-09-01
CN111613654B (en) 2023-11-28

Similar Documents

Publication Publication Date Title
WO2021238129A1 (en) Display panel and display panel manufactoring method
KR100433992B1 (en) Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same
WO2020206810A1 (en) Double-sided display panel and preparation method therefor
US7816857B2 (en) Flat panel display with high efficiency and method of fabricating the same
WO2020024427A1 (en) Oled display panel and method for manufacturing same
KR101267534B1 (en) methode of fabricating organic electro-luminescence device
WO2020199445A1 (en) Oled display device and preparation method thereof
WO2021196995A1 (en) Display apparatus, and method for manufacturing cover plate of display apparatus
US20140291623A1 (en) Organic light emitting diode display and method for manufacturing organic light emitting diode display
WO2020233284A1 (en) Display panel and preparation method therefor, and display device
JP2007234268A (en) Organic el display device
JP2004200167A (en) Organic electroluminescent element and its manufacturing method
WO2019085108A1 (en) Oled display and fabricating method therefor
WO2021120241A1 (en) Display panel and preparation method therefor
WO2020224143A1 (en) Display panel and manufacturing method therefor
WO2020224010A1 (en) Oled display panel and manufacturing method therefor
WO2022052249A1 (en) Oled display panel and preparation method therefor
WO2020237911A1 (en) Foldable display panel and manufacturing method therefor
WO2022048010A1 (en) Display panel and manufacturing method therefor
WO2020239071A1 (en) Display substrate and manufacturing method therefor, display panel and display apparatus
JP2020502722A (en) OLED display substrate, OLED display device, and method of manufacturing OLED display substrate
WO2022170660A1 (en) Display panel and display apparatus
WO2020215615A1 (en) White light organic light-emitting diode display
WO2021088131A1 (en) Display panel and preparation method therefor
WO2020228195A1 (en) Display panel and manufacturing method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20937617

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20937617

Country of ref document: EP

Kind code of ref document: A1