CN112436049B - Display panel preparation method and display panel - Google Patents
Display panel preparation method and display panel Download PDFInfo
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- CN112436049B CN112436049B CN202011428259.8A CN202011428259A CN112436049B CN 112436049 B CN112436049 B CN 112436049B CN 202011428259 A CN202011428259 A CN 202011428259A CN 112436049 B CN112436049 B CN 112436049B
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 122
- 239000010409 thin film Substances 0.000 claims abstract description 85
- 239000010408 film Substances 0.000 claims abstract description 80
- 230000000903 blocking effect Effects 0.000 claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 238000010521 absorption reaction Methods 0.000 claims description 18
- -1 polyethylene Polymers 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 9
- 239000004698 Polyethylene Substances 0.000 claims description 7
- 229920000573 polyethylene Polymers 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000005286 illumination Methods 0.000 abstract description 5
- 239000000969 carrier Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 206010041662 Splinter Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application provides a preparation method of a display panel, which comprises the following steps: providing a motherboard substrate; manufacturing a thin film transistor array layer on a first surface of the motherboard substrate; after the step of providing a motherboard substrate and before the step of manufacturing the thin film transistor array layer on the first surface of the motherboard substrate, the method further comprises the step of arranging a light blocking film on the second surface of the motherboard substrate, wherein the light blocking film can block light from irradiating the thin film transistor of the thin film transistor array layer through the motherboard substrate, and the second surface is the surface of the motherboard substrate, which is away from one side of the thin film transistor array layer. Because light can not irradiate the thin film transistor from the second surface of the motherboard substrate, the channel of the thin film transistor can not be influenced by the light irradiation, the problem that the brightness of the display panel is uneven due to the influence of illumination on the thin film transistor is avoided, and the brightness uniformity and the production yield of the display panel are improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel preparation method and a display panel.
Background
An OLED (Organic Light-Emitting Diode) is called an Organic electroluminescent Diode. The OLED display technology has the advantages of full solid state, active light emission, high contrast ratio, ultra-thin, low power consumption, high effect speed, wide working range, easy realization of flexible display, 3D display and the like, so that the OLED display technology is applied to a plurality of display devices at present, such as televisions and mobile devices.
After the Thin Film Transistor (TFT) in the display panel is irradiated, carriers are affected, and thus, the mobility of the TFT is different, resulting in a problem of uneven display.
Disclosure of Invention
According to a first aspect of embodiments of the present application, there is provided a method for manufacturing a display panel, including:
providing a motherboard substrate;
manufacturing a thin film transistor array layer on a first surface of the motherboard substrate;
it is characterized in that the method comprises the steps of,
after the step of providing a motherboard substrate and before the step of manufacturing the thin film transistor array layer on the first surface of the motherboard substrate, the method further comprises the step of arranging a light blocking film on the second surface of the motherboard substrate, wherein the light blocking film can block light from irradiating the thin film transistor of the thin film transistor array layer through the motherboard substrate, and the second surface is the surface of the motherboard substrate, which is away from one side of the thin film transistor array layer.
In one embodiment, the light blocking film is in releasable connection with the motherboard substrate.
In one embodiment, the light blocking film is attached to the second surface of the motherboard substrate.
In one embodiment, the light blocking film is opaque over the entire surface, and the material from which the light blocking film is made is polyethylene terephthalate.
In one embodiment, the light blocking film includes a mesh portion and a plurality of total absorption portions, the mesh portion being disposed around the total absorption portions, a projection of each of the display panels on the light blocking film being located in the total absorption film region, and a projection of the mesh portion on the motherboard substrate being located in a region between adjacent display panels;
the material for manufacturing the grid part is polyethylene, and the material for manufacturing the total absorption part is polyethylene terephthalate;
the grid part is light-transmitting or light-proof, and the total absorption part is light-proof.
In one embodiment, after the step of fabricating the thin film transistor array layer on the first surface of the motherboard substrate, the method further comprises:
and manufacturing an organic light-emitting layer on the thin film transistor array layer, and packaging the organic light-emitting layer.
In one embodiment, the method further includes, after the step of packaging the organic light emitting layer, fabricating an organic light emitting layer on the thin film transistor array layer:
tearing the light blocking film from the second surface of the motherboard substrate;
and thinning the mother substrate.
In one embodiment, after the thinning processing step is performed on the motherboard substrate, the method further includes:
and coating an organic film layer on the second surface of the motherboard substrate.
In one embodiment, after the step of coating the second surface of the motherboard substrate with the organic film layer, the method further comprises:
and a light blocking film is arranged on the surface of the organic film layer, which is far away from the motherboard substrate.
In one embodiment, after the step of disposing a light blocking film on a surface of the organic film layer remote from the mother substrate, the mother substrate is cut.
According to a second aspect of the embodiments of the present application, there is provided a display panel, including a substrate and a thin film transistor array layer disposed on the substrate, where a light blocking film is disposed on a surface of a side of the substrate away from the thin film transistor array, where the light blocking film can block light from being irradiated to a thin film transistor of the thin film transistor array layer through the substrate, and the light blocking film is in peelable connection with the substrate.
The preparation method of the display panel provided by the embodiment of the application comprises the following steps: providing a motherboard substrate; manufacturing a thin film transistor array layer on a first surface of the motherboard substrate; after the step of providing a motherboard substrate and before the step of manufacturing the thin film transistor array layer on the first surface of the motherboard substrate, the method further comprises the step of arranging a light blocking film on the second surface of the motherboard substrate, wherein the light blocking film can block light from irradiating the thin film transistor of the thin film transistor array layer through the motherboard substrate, and the second surface is the surface of the motherboard substrate, which is away from one side of the thin film transistor array layer. By arranging the light blocking film on the second surface of the mother substrate before the thin film transistor is manufactured on the mother substrate, light cannot irradiate the thin film transistor from the second surface of the mother substrate in the manufacturing process of the display panel, the number of carriers is not changed due to irradiation of the light on the channel of the thin film transistor, the mobility difference of the thin film transistor caused by irradiation is avoided, the problem that the brightness of the display panel is uneven due to the influence of irradiation on the thin film transistor is avoided, and the brightness uniformity and the production yield of the display panel are improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed.
Drawings
FIG. 1 is a schematic cross-sectional view of a display panel according to the prior art of the present application;
FIG. 2 is a schematic cross-sectional view of another display panel according to the prior art of the present application;
FIG. 3 is a schematic bottom view of the display panel shown in FIG. 2;
FIG. 4 is a schematic cross-sectional view of a display panel according to an embodiment of the disclosure;
FIG. 5 is a schematic cross-sectional view of a display panel according to another embodiment of the disclosure;
fig. 6 is a schematic top view of a light blocking film of a display panel as shown in fig. 4 or 5;
FIG. 7 is a schematic top view of a light blocking film of the display panel shown in FIG. 6 after four cuts;
fig. 8 is a schematic top view of a light blocking film of the display panel shown in fig. 7 after being cut;
FIG. 9 is a flowchart of a method for manufacturing a display panel according to another embodiment;
fig. 10 is a schematic cross-sectional view of a display panel according to another embodiment.
Reference numerals illustrate:
a motherboard substrate 10; a first surface 11; a second surface 12; a substrate 13;
a thin film transistor array layer 20;
a light blocking film 30; a mesh portion 31; a total absorption section 32;
an organic light emitting layer 40;
an encapsulation layer 50;
an organic film layer 60;
an under-screen camera area 70;
an under-screen fingerprint area 80;
a display panel 100.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings.
The terminology used in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms "a" or "an" and the like as used in the description and the claims do not denote a limitation of quantity, but rather denote the presence of at least one. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The term "plurality" includes two, corresponding to at least two. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The display panel and the display device in the embodiments of the present application will be described in detail with reference to the accompanying drawings. The features of the examples and embodiments described below may be supplemented or combined with one another without conflict.
In the manufacturing process of the display panel, a mother board is manufactured firstly, each mother board comprises a plurality of display panels, the mother boards are cut after the mother boards are manufactured, and each display panel is correspondingly used on display equipment such as a mobile phone, a tablet personal computer, a notebook computer and a television.
Referring to fig. 1, in the process of manufacturing the display panel, a mother substrate 10 is provided, and the mother substrate 10 can be used to manufacture a plurality of display panels. The thin film transistor array layer 20 is fabricated on the first surface 11 of the mother substrate by etching or the like, and the thin film transistor array layer 20 includes a plurality of thin film transistors for performing switching control or the like on the display unit of the display panel. In the process of manufacturing the display panel, there is an illumination environment, since the mother substrate 10 is made of transparent materials, light can irradiate the thin film transistor through the mother substrate 10, when the channel of the thin film transistor is irradiated by the light, the number of carriers can be influenced, so that the mobility of the thin film transistor is changed, the stability of the product performance is influenced, and if the illumination degrees of different thin film transistors of the display panel are different, the mobility difference among the different thin film transistors is further caused, so that the display brightness of the display panel is uneven.
At present, as shown in fig. 2, an organic film layer 60 is disposed on a side of the motherboard substrate 10 away from the thin film transistor array layer, and the organic film layer 60 is transparent or semitransparent. As shown in fig. 3, in order to meet the requirement of a full screen, some display panels may be currently equipped with an under-screen camera and/or an under-screen fingerprint technology, and in order to meet the requirement of light transmission of the under-screen camera area 70 and the under-screen fingerprint area 80, the organic film layer 60 needs to be hollowed out to correspond to the under-screen camera area 70 and the under-screen fingerprint area 80. Because the under-screen camera region 70 and the under-screen fingerprint region 80 corresponding to the organic film layer 60 are hollowed out, light rays penetrate through the motherboard substrate in the under-screen camera region 70 and the under-screen fingerprint region 80 to be slightly more than in other regions, so that the number of carriers generated by the thin film transistors corresponding to the under-screen camera region 70 and the under-screen fingerprint region 80 is obviously different from that of other regions, the mobility of the thin film transistors is obviously different from that of other regions, the display brightness of the display panel is uneven, and then the display panel generates waves (mura) near the under-screen camera region 70 and the under-screen fingerprint region 80 during display.
In order to solve the above problems, the present embodiment provides a method for manufacturing a display panel. Please refer to fig. 4 and 9, which include: providing a motherboard substrate 10; fabricating a thin film transistor array layer 20 on the first surface 11 of the motherboard substrate 10; after the step of providing a motherboard substrate 10 and before the step of fabricating the thin film transistor array layer 20 on the first surface 11 of the motherboard substrate 10, a light blocking film 30 is further disposed on the second surface 12 of the motherboard substrate 10, where the light blocking film 30 can block light from irradiating the thin film transistor of the thin film transistor array layer 20 through the motherboard substrate 10, and the second surface 12 is a surface of the motherboard substrate 10 facing away from the side of the thin film transistor array layer 20.
In this embodiment, a light blocking film 30 is disposed on the second surface 12 of the mother substrate 10 before the thin film transistor is fabricated on the mother substrate 10, so that light cannot be irradiated to the thin film transistor from the second surface 12 of the mother substrate 10 during the fabrication of the display panel, and the number of carriers is not changed due to the irradiation of the light on the channel of the thin film transistor, thereby avoiding the mobility difference of the thin film transistor caused by the irradiation of light, avoiding the problem of uneven brightness of the display panel due to the influence of the irradiation of light on the thin film transistor, and improving the brightness uniformity and the production yield of the display panel.
The display panel can be an OLED display panel or a liquid crystal display panel.
Further, the mother substrate 10 is made of transparent material, and specifically, the mother substrate 10 is made of transparent glass. In the process of manufacturing the display panel, external light is irradiated to the second surface direction of the mother substrate 10 by direct irradiation or reflection, etc.
In another embodiment, the light blocking film 30 is in a releasable connection with the motherboard substrate 10, and preferably, the light blocking film 30 is attached to the second surface 12 of the motherboard substrate 10. Namely: the light blocking film 30 is attached to the second surface 12 of the motherboard substrate when the light blocking film 30 is required to block light, and the light blocking film 30 is torn off when the light blocking film 30 is not required to block light or the second surface 12 of the motherboard substrate 10 is required to be processed.
Further, the light blocking film 30 may be attached and detached a plurality of times.
In another embodiment, the light blocking film 30 is opaque over the entire surface, and the material from which the light blocking film is made is polyethylene terephthalate.
In another embodiment, referring to fig. 6 to 8, the light blocking film 30 includes a mesh portion 31 and a plurality of total absorbing portions 32, the mesh portion 31 is disposed around the total absorbing portions 32, a projection of each of the display panels on the light blocking film 30 is located in an area of the total absorbing portion 32, and a projection of the mesh portion 31 on the motherboard substrate 10 is located in an area between adjacent display panels. The mesh portion 31 is made of polyethylene, and the total absorbing portion 32 is made of polyethylene terephthalate. When the display mother board 10 is cut, a cutting line is positioned at the mesh portion 31.
Further, the grid part is transparent or opaque, and the total absorption part is opaque.
Since polyethylene terephthalate has higher total light absorption performance than polyethylene, and polyethylene is easier to cut than polyethylene terephthalate in material, in this embodiment, the light blocking film 30 is made into a grid shape, and polyethylene is used as the material for the grid portion 31, and polyethylene terephthalate is used for the total absorption portion 32, so that the light blocking film 30 ensures high light blocking performance, and simultaneously reduces the difficulty in cutting the motherboard substrate, reduces the risk of splinter and the like caused by poor cutting, and improves the yield of products.
In another embodiment, referring to fig. 4 and 9, after the step of fabricating the thin film transistor array layer 20 on the first surface 11 of the motherboard substrate 10, the method further includes: an organic light emitting layer 40 is fabricated on the thin film transistor array layer 20, and the organic light emitting layer 40 is encapsulated, specifically, the organic light emitting layer 40 is encapsulated by an encapsulation layer 50.
In another embodiment, referring to fig. 6, 7 and 9, after the step of fabricating the thin film transistor array layer 20 on the first surface 11 of the motherboard substrate 10 and before the step of fabricating the organic light emitting layer 40 on the thin film transistor array layer 20, the method further includes: the mother substrate 10 is subjected to four-division. That is, the mother substrate 10 was divided into 4 parts by cutting along the AA 'line and the BB' line shown in fig. 6, and the cut was shown in fig. 7.
In another embodiment, referring to fig. 9, an organic light emitting layer 40 is fabricated on the thin film transistor array layer 20, and after the packaging step is performed on the organic light emitting layer 40, the method further includes: tearing the light blocking film 30 from the second surface 12 of the motherboard substrate 10; the mother substrate 10 is thinned.
In another embodiment, referring to fig. 5 and 9, after the step of thinning the motherboard substrate 10, the method further includes: an organic film layer 60 is applied to the second surface 12 of the motherboard substrate 10.
In another embodiment, referring to fig. 5 and 9, after the step of coating the second surface 12 of the motherboard substrate 10 with the organic film layer 60, the method further includes: a light blocking film 30 is disposed on a surface of the organic film layer 60 remote from the motherboard substrate 10.
In another embodiment, referring to fig. 8 and 9, after the step of disposing the light blocking film 30 on the surface of the organic film layer 60 away from the mother substrate 10, the mother substrate 10 is cut, and the mother substrate 10 is cut to form a display panel, the shape of which is shown in fig. 8.
In another embodiment, as shown in fig. 10, a display panel 100 is provided, which includes a substrate 13 and a thin film transistor array layer 20 disposed on the substrate 13, wherein a light blocking film 30 is disposed on a surface of a side of the substrate 13 away from the thin film transistor array layer 20, the light blocking film 30 can block light from penetrating through the substrate 13 to irradiate the thin film transistor of the thin film transistor array layer 20, and the light blocking film 30 is in a peelable connection with the substrate 13.
By providing the light blocking film 30 on the surface of the side of the substrate 13 away from the thin film transistor array layer 20, light cannot penetrate through the substrate 13 to irradiate the thin film transistor of the thin film transistor array layer 20 in the preparation process of the display panel 100, and the number of carriers is not changed due to irradiation of the light on the channel of the thin film transistor, so that the mobility difference of the thin film transistor caused by illumination is avoided, the problem that the brightness of the display panel 100 is uneven due to the influence of the illumination on the thin film transistor is avoided, and the brightness uniformity and the production yield of the display panel 100 are improved.
The foregoing description is only a preferred embodiment of the present application, and is not intended to limit the invention to the particular embodiment disclosed, but is not intended to limit the invention to the particular embodiment disclosed, as the equivalent of some alterations or modifications can be made without departing from the scope of the present application.
Claims (7)
1. A method of manufacturing a display panel, comprising:
providing a motherboard substrate;
manufacturing a thin film transistor array layer on a first surface of the motherboard substrate;
it is characterized in that the method comprises the steps of,
after the step of providing a mother substrate and before the step of manufacturing the thin film transistor array layer on the first surface of the mother substrate, the method further comprises the step of arranging a light blocking film on the second surface of the mother substrate, wherein the light blocking film can block light from irradiating the thin film transistor of the thin film transistor array layer through the mother substrate, and the second surface is the surface of the mother substrate, which is away from one side of the thin film transistor array layer;
the light blocking film comprises a grid part and a plurality of full absorption parts, the grid part is arranged around the full absorption parts, the projection of each display panel on the light blocking film is positioned in the full absorption part area, and the projection of the grid part on the motherboard substrate is positioned in the area between the adjacent display panels;
the material for manufacturing the grid part is polyethylene, and the material for manufacturing the total absorption part is polyethylene terephthalate;
the grid part is light-transmitting or light-proof, and the total absorption part is light-proof.
2. The method of manufacturing a display panel according to claim 1, wherein the light blocking film is in releasable connection with the motherboard substrate.
3. The method of manufacturing a display panel according to claim 1, wherein the light blocking film is attached to the second surface of the mother substrate.
4. A method of manufacturing a display panel, comprising:
providing a motherboard substrate;
manufacturing a thin film transistor array layer on a first surface of the motherboard substrate;
it is characterized in that the method comprises the steps of,
after the step of providing a mother substrate and before the step of manufacturing the thin film transistor array layer on the first surface of the mother substrate, the method further comprises the step of arranging a light blocking film on the second surface of the mother substrate, wherein the light blocking film can block light from irradiating the thin film transistor of the thin film transistor array layer through the mother substrate, and the second surface is the surface of the mother substrate, which is away from one side of the thin film transistor array layer;
after the step of fabricating the thin film transistor array layer on the first surface of the motherboard substrate, the method further comprises:
manufacturing an organic light-emitting layer on the thin film transistor array layer, and packaging the organic light-emitting layer;
manufacturing an organic light-emitting layer on the thin film transistor array layer, and after the packaging step of the organic light-emitting layer, further comprising:
tearing the light blocking film from the second surface of the motherboard substrate;
thinning the mother board substrate;
after the thinning processing step is performed on the motherboard substrate, the method further comprises:
and coating an organic film layer on the second surface of the motherboard substrate.
5. The method of manufacturing a display panel according to claim 4, further comprising, after the step of coating the second surface of the mother substrate with the organic film layer:
and a light blocking film is arranged on the surface of the organic film layer, which is far away from the motherboard substrate.
6. The method of manufacturing a display panel according to claim 5, wherein the mother substrate is cut after the step of disposing a light blocking film on a surface of the organic film layer remote from the mother substrate.
7. The display panel is characterized by comprising a substrate and a thin film transistor array layer arranged on the substrate, wherein a light blocking film is arranged on the surface of one side of the substrate far away from the thin film transistor array layer, the light blocking film can block light from penetrating through the substrate to irradiate the thin film transistor of the thin film transistor array layer, and the light blocking film is in strippable connection with the substrate; the light blocking film comprises a grid part and a plurality of full absorption parts, the grid part is arranged around the full absorption parts, the projection of each display panel on the light blocking film is positioned in the full absorption part area, and the projection of the grid part on the motherboard substrate is positioned in the area between the adjacent display panels;
the material for manufacturing the grid part is polyethylene, and the material for manufacturing the total absorption part is polyethylene terephthalate;
the grid part is light-transmitting or light-proof, and the total absorption part is light-proof.
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