CN112436049A - Display panel preparation method and display panel - Google Patents
Display panel preparation method and display panel Download PDFInfo
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- CN112436049A CN112436049A CN202011428259.8A CN202011428259A CN112436049A CN 112436049 A CN112436049 A CN 112436049A CN 202011428259 A CN202011428259 A CN 202011428259A CN 112436049 A CN112436049 A CN 112436049A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000010409 thin film Substances 0.000 claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 239000012528 membrane Substances 0.000 claims abstract description 14
- 230000003760 hair shine Effects 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 23
- 238000010521 absorption reaction Methods 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 17
- -1 polyethylene terephthalate Polymers 0.000 claims description 15
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 9
- 239000004698 Polyethylene Substances 0.000 claims description 6
- 229920000573 polyethylene Polymers 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 239000000969 carrier Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 206010041662 Splinter Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
Abstract
The application provides a display panel preparation method, which comprises the following steps: providing a motherboard substrate; manufacturing a thin film transistor array layer on the first surface of the motherboard substrate; after providing a motherboard base plate step and before the preparation thin film transistor array layer step on the first surface of motherboard base plate, still include the second surface of motherboard base plate sets up the membrane of keeping out light, the membrane of keeping out light can block that light shines the thin film transistor on thin film transistor array layer through the motherboard base plate, the second surface is the motherboard base plate deviates from the surface of thin film transistor array layer one side. Because light can not be irradiated to the thin film transistor from the second surface of the motherboard substrate, the channel of the thin film transistor can not be influenced by the light irradiation, the problem of uneven brightness of the display panel caused by the influence of the light on the thin film transistor is avoided, and the brightness uniformity and the production yield of the display panel are improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
An OLED (Organic Light-Emitting Diode) is called an Organic electroluminescent Diode. The OLED display technology has many advantages, such as full solid state, active light emission, high contrast, ultra-thin, low power consumption, fast effect speed, wide working range, and easy implementation of flexible display and 3D display, and is currently applied to many display devices, for example, televisions and mobile devices.
After a Thin Film Transistor (TFT) in a display panel is illuminated, carriers are affected, which causes a difference in mobility of the TFT, resulting in a problem of display non-uniformity.
Disclosure of Invention
According to a first aspect of embodiments of the present application, there is provided a display panel manufacturing method, including:
providing a motherboard substrate;
manufacturing a thin film transistor array layer on the first surface of the motherboard substrate;
it is characterized in that the preparation method is characterized in that,
after providing a motherboard base plate step and before the preparation thin film transistor array layer step on the first surface of motherboard base plate, still include the second surface of motherboard base plate sets up the membrane of keeping out light, the membrane of keeping out light can block that light shines the thin film transistor on thin film transistor array layer through the motherboard base plate, the second surface is the motherboard base plate deviates from the surface of thin film transistor array layer one side.
In one embodiment, the light-blocking film is in a peelable connection with the motherboard substrate.
In one embodiment, the light shielding film is attached to the second surface of the motherboard substrate.
In one embodiment, the light blocking film is opaque on the whole surface, and the material for manufacturing the light blocking film is polyethylene terephthalate.
In one embodiment, the light-shielding film comprises a grid part and a plurality of full absorption parts, the grid part is arranged around the full absorption parts, the projection of each display panel on the light-shielding film is positioned in the area of the full absorption film, and the projection of the grid part on the motherboard substrate is positioned in the area between the adjacent display panels;
the mesh part is made of polyethylene, and the full absorption part is made of polyethylene terephthalate;
the grid part is light-transmitting or light-proof, and the full-absorption part is light-proof.
In one embodiment, after the step of forming the thin film transistor array layer on the first surface of the motherboard substrate, the method further includes:
and manufacturing an organic light emitting layer on the thin film transistor array layer, and packaging the organic light emitting layer.
In one embodiment, after the step of fabricating an organic light emitting layer on the thin film transistor array layer and encapsulating the organic light emitting layer, the method further includes:
tearing the light shielding film from the second surface of the motherboard substrate;
and thinning the motherboard substrate.
In one embodiment, after the step of thinning the motherboard substrate, the method further includes:
and coating an organic film layer on the second surface of the motherboard substrate.
In one embodiment, after the step of coating the second surface of the motherboard substrate with an organic film layer, the method further includes:
and arranging a light shielding film on the surface of the organic film layer far away from the motherboard substrate.
In one embodiment, after the step of arranging the light shielding film on the surface of the organic film layer far away from the motherboard substrate, the motherboard substrate is cut.
According to the second aspect of the embodiment of this application, a display panel is provided, including base plate and the thin film transistor array layer of setting on the base plate one side surface of keeping away from the thin film transistor array is provided with the light blocking membrane, the light blocking membrane can block light and shine the thin film transistor on thin film transistor array layer through the base plate, the light blocking membrane with the base plate is the connection that can peel off.
The preparation method of the display panel provided by the embodiment of the application comprises the following steps: providing a motherboard substrate; manufacturing a thin film transistor array layer on the first surface of the motherboard substrate; after providing a motherboard base plate step and before the preparation thin film transistor array layer step on the first surface of motherboard base plate, still include the second surface of motherboard base plate sets up the membrane of keeping out light, the membrane of keeping out light can block that light shines the thin film transistor on thin film transistor array layer through the motherboard base plate, the second surface is the motherboard base plate deviates from the surface of thin film transistor array layer one side. The light blocking film is arranged on the second surface of the motherboard substrate before the thin film transistor is manufactured on the motherboard substrate, so that in the preparation process of the display panel, light cannot irradiate the thin film transistor from the second surface of the motherboard substrate, the number of current carriers of a channel of the thin film transistor cannot be changed due to the irradiation of the light, the mobility difference of the thin film transistor caused by the irradiation is avoided, the problem that the brightness of the display panel is uneven due to the influence of the irradiation on the thin film transistor is avoided, and the brightness uniformity and the production yield of the display panel are improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
FIG. 1 is a schematic cross-sectional view of a display panel according to the prior art;
FIG. 2 is a schematic cross-sectional view of another prior art display panel of the present application;
FIG. 3 is a schematic bottom view of the display panel shown in FIG. 2;
fig. 4 is a schematic cross-sectional view illustrating a display panel according to an embodiment of the present disclosure;
fig. 5 is a schematic cross-sectional view of a display panel according to another embodiment of the present application;
FIG. 6 is a schematic top view of a light-blocking film of the display panel shown in FIG. 4 or FIG. 5;
fig. 7 is a schematic top view of the light blocking film of the display panel shown in fig. 6 after being four-cut;
fig. 8 is a schematic top view of the light blocking film of the display panel shown in fig. 7 after being cut;
fig. 9 is a flowchart of a method for manufacturing a display panel according to another embodiment;
fig. 10 is a schematic cross-sectional view of a display panel according to another embodiment.
Description of reference numerals:
a motherboard substrate 10; a first surface 11; a second surface 12; a substrate 13;
a thin film transistor array layer 20;
a light-shielding film 30; a mesh part 31; a total absorbing portion 32;
an organic light-emitting layer 40;
an encapsulation layer 50;
an organic film layer 60;
an off-screen camera area 70;
an under-screen fingerprint region 80;
a display panel 100.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of the terms "a" or "an" and the like in the description and in the claims of this application do not denote a limitation of quantity, but rather denote the presence of at least one. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "plurality" includes two, and is equivalent to at least two. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The display panel and the display device in the embodiments of the present application will be described in detail below with reference to the accompanying drawings. The features of the following examples and embodiments can be supplemented or combined with each other without conflict.
In the manufacturing process of the display panel, a mother board is manufactured firstly, each mother board comprises a plurality of display panels, the mother board is cut after the mother board is manufactured to form the display panel, and each display panel is correspondingly used on a display device such as a mobile phone, a tablet computer, a notebook computer and a television.
Referring to fig. 1, in the process of manufacturing a display panel, a mother substrate 10 is provided, and the mother substrate 10 may be used to manufacture a plurality of display panels. An upper thin film transistor array layer 20 is manufactured on the first surface 11 of the motherboard substrate through etching and other processes, the thin film transistor array layer 20 comprises a plurality of thin film transistors, and the thin film transistors are used for performing on-off control and the like on display units of a display panel. In the preparation process of the display panel, an illumination environment exists, because the motherboard substrate 10 is made of a transparent material, light can penetrate through the motherboard substrate 10 to irradiate the thin film transistor, when the channel of the thin film transistor is irradiated by the light, the number of current carriers can be influenced, so that the mobility of the thin film transistor is changed, the stability of product performance is influenced, if the illumination degrees of different thin film transistors of the display panel are different, the difference of the mobility among different thin film transistors can be further caused, and further the display brightness of the display panel is not uniform.
At present, as shown in fig. 2, an organic film layer 60 is disposed on a side of the motherboard substrate 10 away from the thin film transistor array layer, and the organic film layer 60 is transparent or semitransparent. As shown in fig. 3, in order to meet the requirements of a full-screen, a part of display panels may carry a camera under the screen and/or a fingerprint technology under the screen, and in order to meet the requirements of a camera area 70 under the screen and a fingerprint area 80 under the screen for light transmission, the organic film layer 60 needs to be hollowed out corresponding to the camera area 70 under the screen and the fingerprint area 80 under the screen. Due to the fact that the under-screen camera area 70 and the under-screen fingerprint area 80 corresponding to the organic film layer 60 are hollowed out, light is required to be more in the under-screen camera area 70 and the under-screen fingerprint area 80 through the mother board substrate than in other areas, the number of carriers generated by thin film transistors corresponding to the under-screen camera area 70 and the under-screen fingerprint area 80 is obviously different from other areas, the mobility of the thin film transistors is obviously different from other areas, the display brightness of the display panel is uneven, and ripples (mura) are generated near the under-screen camera area 70 and the under-screen fingerprint area 80 when the display panel displays.
In order to solve the above problem, the present embodiment provides a method for manufacturing a display panel. Please refer to fig. 4 and fig. 9, which includes: providing a motherboard substrate 10; manufacturing a thin film transistor array layer 20 on the first surface 11 of the motherboard substrate 10; after the step of providing a motherboard substrate 10 and before the step of fabricating the thin film transistor array layer 20 on the first surface 11 of the motherboard substrate 10, the method further includes disposing a light-blocking film 30 on the second surface 12 of the motherboard substrate 10, where the light-blocking film 30 can block light from irradiating the thin film transistor of the thin film transistor array layer 20 through the motherboard substrate 10, and the second surface 12 is a surface of the motherboard substrate 10 facing away from the thin film transistor array layer 20.
In the embodiment, the light shielding film 30 is arranged on the second surface 12 of the motherboard substrate 10 before the thin film transistor is manufactured on the motherboard substrate 10, so that in the preparation process of the display panel, light cannot irradiate the thin film transistor from the second surface 12 of the motherboard substrate 10, the number of current carriers of a channel of the thin film transistor cannot be changed due to the irradiation of the light, the mobility difference of the thin film transistor caused by the irradiation is avoided, the problem of uneven brightness of the display panel due to the influence of the irradiation on the thin film transistor is avoided, and the brightness uniformity and the production yield of the display panel are improved.
The display panel can be an OLED display panel or a liquid crystal display panel.
Further, the motherboard substrate 10 is made of a transparent material, and specifically, the motherboard substrate 10 is made of transparent glass. In the manufacturing process of the display panel, the external light may be directly irradiated or reflected toward the second surface of the motherboard substrate 10.
In another embodiment, the light shielding film 30 is detachably connected to the motherboard substrate 10, and preferably, the light shielding film 30 is attached to the second surface 12 of the motherboard substrate 10. Namely: the light blocking film is attached to the second surface 12 of the motherboard substrate when the light blocking film 30 is required to block light, and the light blocking film 30 is torn away when the light blocking film 30 is not required to block light or the second surface 12 of the motherboard substrate 10 is required to be processed.
Further, the light shielding film 30 can be attached and torn off for multiple times.
In another embodiment, the light-blocking film 30 is opaque to light over the whole surface, and the material of the light-blocking film is polyethylene terephthalate.
In another embodiment, referring to fig. 6 to 8, the light shielding film 30 includes a mesh portion 31 and a plurality of total absorption portions 32, the mesh portion 31 is disposed around the total absorption portions 32, a projection of each display panel on the light shielding film 30 is located in a region of the total absorption portion 32, and a projection of the mesh portion 31 on the mother substrate 10 is located in a region between adjacent display panels. The mesh part 31 is made of polyethylene, and the total absorption part 32 is made of polyethylene terephthalate. When the display mother substrate 10 is cut, the cutting lines are located in the mesh portion 31.
Furthermore, the grid part is light-transmitting or light-proof, and the full absorption part is light-proof.
Because the full absorption performance of the polyethylene terephthalate to light is higher than that of polyethylene, and the polyethylene is easier to cut than the polyethylene terephthalate material, in this embodiment, the light blocking film 30 is made into a grid shape, the grid part 31 is made of polyethylene, and the full absorption part 32 is made of polyethylene terephthalate, so that the light blocking film 30 not only ensures high light blocking performance, but also reduces the cutting difficulty of the motherboard substrate, reduces the risk of splinters and the like caused by poor cutting, and improves the yield of products.
In another embodiment, referring to fig. 4 and 9, after the step of fabricating the thin film transistor array layer 20 on the first surface 11 of the motherboard substrate 10, the method further includes: an organic light emitting layer 40 is formed on the thin film transistor array layer 20, and the organic light emitting layer 40 is encapsulated, specifically, the organic light emitting layer 40 is encapsulated by an encapsulation layer 50.
In another embodiment, referring to fig. 6, 7 and 9, after the step of fabricating the thin film transistor array layer 20 on the first surface 11 of the motherboard substrate 10, and before the step of fabricating the organic light emitting layer 40 on the thin film transistor array layer 20, the method further includes: and performing four-part cutting on the motherboard substrate 10. That is, the mother substrate is cut along the AA 'line and the BB' line shown in fig. 6, and the mother substrate 10 is divided into 4 parts, and then cut as shown in fig. 7.
In another embodiment, referring to fig. 9, after the step of fabricating an organic light emitting layer 40 on the thin film transistor array layer 20 and encapsulating the organic light emitting layer 40, the method further includes: tearing the light shielding film 30 from the second surface 12 of the motherboard substrate 10; the motherboard substrate 10 is thinned.
In another embodiment, referring to fig. 5 and 9, after the step of thinning the motherboard substrate 10, the method further includes: an organic film layer 60 is coated on the second surface 12 of the motherboard substrate 10.
In another embodiment, referring to fig. 5 and 9, after the step of coating the organic film layer 60 on the second surface 12 of the motherboard substrate 10, the method further includes: a light shielding film 30 is disposed on the surface of the organic film layer 60 away from the motherboard substrate 10.
In another embodiment, referring to fig. 8 and 9, after the step of disposing the light shielding film 30 on the surface of the organic film layer 60 away from the mother substrate 10, the mother substrate 10 is cut, and the mother substrate 10 is cut to form a display panel, which has a shape shown in fig. 8.
In another embodiment, a display panel 100 is provided, as shown in fig. 10, which includes a substrate 13 and a thin film transistor array layer 20 disposed on the substrate 13, wherein a light-blocking film 30 is disposed on a surface of the substrate 13 away from the thin film transistor array layer 20, the light-blocking film 30 can block light from irradiating the thin film transistor array layer 20 through the substrate 13, and the light-blocking film 30 is in a peelable connection with the substrate 13.
The light blocking film 30 is arranged on the surface of one side of the substrate 13, which is far away from the thin film transistor array layer 20, so that in the preparation process of the display panel 100, light cannot penetrate through the substrate 13 to irradiate the thin film transistor of the thin film transistor array layer 20, the number of current carriers in a channel of the thin film transistor cannot be changed due to the irradiation of the light, the mobility difference of the thin film transistor caused by the irradiation is avoided, the problem that the brightness of the display panel 100 is uneven due to the influence of the irradiation on the thin film transistor is avoided, and the brightness uniformity and the production yield of the display panel 100 are improved.
Although the present application has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application, and all changes, substitutions and alterations that fall within the spirit and scope of the application are to be understood as being covered by the following claims.
Claims (10)
1. A display panel preparation method comprises the following steps:
providing a motherboard substrate;
manufacturing a thin film transistor array layer on the first surface of the motherboard substrate;
it is characterized in that the preparation method is characterized in that,
after providing a motherboard base plate step and before the preparation thin film transistor array layer step on the first surface of motherboard base plate, still include the second surface of motherboard base plate sets up the membrane of keeping out light, the membrane of keeping out light can block that light shines the thin film transistor on thin film transistor array layer through the motherboard base plate, the second surface is the motherboard base plate deviates from the surface of thin film transistor array layer one side.
2. The method for manufacturing a display panel according to claim 1, wherein the light-shielding film is in peelable connection with the motherboard substrate;
preferably, the light-shielding film is attached to the second surface of the motherboard substrate.
3. The method for manufacturing a display panel according to claim 1, wherein the light-blocking film is opaque on the whole surface, and a material for manufacturing the light-blocking film is polyethylene terephthalate.
4. The method for manufacturing a display panel according to claim 1,
the light shielding film comprises a grid part and a plurality of total absorption parts, the grid part is arranged around the total absorption parts, the projection of each display panel on the light shielding film is positioned in the total absorption part area, and the projection of the grid part on the motherboard substrate is positioned in the area between the adjacent display panels;
the mesh part is made of polyethylene, and the full absorption part is made of polyethylene terephthalate;
the grid part is light-transmitting or light-proof, and the full-absorption part is light-proof.
5. The method for manufacturing a display panel according to claim 1, further comprising, after the step of forming a thin film transistor array layer on the first surface of the mother substrate:
and manufacturing an organic light emitting layer on the thin film transistor array layer, and packaging the organic light emitting layer.
6. The method for manufacturing a display panel according to claim 5, wherein an organic light emitting layer is formed on the thin film transistor array layer, and after the step of encapsulating the organic light emitting layer, the method further comprises:
tearing the light shielding film from the second surface of the motherboard substrate;
and thinning the motherboard substrate.
7. The method for manufacturing a display panel according to claim 6, further comprising, after the step of thinning the mother substrate:
and coating an organic film layer on the second surface of the motherboard substrate.
8. The method for manufacturing a display panel according to claim 7, further comprising, after the step of coating the organic film layer on the second surface of the mother substrate:
and arranging a light shielding film on the surface of the organic film layer far away from the motherboard substrate.
9. The method for manufacturing a display panel according to claim 8, wherein the mother substrate is cut after the step of providing the light blocking film on the surface of the organic film layer away from the mother substrate.
10. The utility model provides a display panel which characterized in that, includes the base plate and sets up the thin film transistor array layer on the base plate one side surface of keeping away from the thin film transistor array layer of base plate is provided with the membrane of keeping off light, the membrane of keeping off light can block light transmission the base plate shines the thin film transistor on thin film transistor array layer, the membrane of keeping off light with the connection that the base plate is strippable.
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| CN202011428259.8A CN112436049B (en) | 2020-12-09 | 2020-12-09 | Display panel preparation method and display panel |
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| CN202011428259.8A CN112436049B (en) | 2020-12-09 | 2020-12-09 | Display panel preparation method and display panel |
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| CN112436049B (en) | 2024-02-23 |
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