WO2019114293A1 - 用于形成色阻的感光组合物以及制备彩膜基板的方法、彩膜基板 - Google Patents

用于形成色阻的感光组合物以及制备彩膜基板的方法、彩膜基板 Download PDF

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Publication number
WO2019114293A1
WO2019114293A1 PCT/CN2018/099212 CN2018099212W WO2019114293A1 WO 2019114293 A1 WO2019114293 A1 WO 2019114293A1 CN 2018099212 W CN2018099212 W CN 2018099212W WO 2019114293 A1 WO2019114293 A1 WO 2019114293A1
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Prior art keywords
color resist
pigment
color
photosensitive composition
group
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Application number
PCT/CN2018/099212
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English (en)
French (fr)
Inventor
钟国强
董安鑫
殷瑞
余娅
唐文浩
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥鑫晟光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/333,514 priority Critical patent/US20190258159A1/en
Priority to EP18852730.3A priority patent/EP3739380A4/en
Publication of WO2019114293A1 publication Critical patent/WO2019114293A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G03F7/0295—Photolytic halogen compounds
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters

Definitions

  • Embodiments of the present disclosure relate to the field of display technologies, and in particular, to a photosensitive composition for forming a color resist and a method of preparing a color filter substrate, a color filter substrate.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • LCD Thin Film Transistor Liquid Crystal Display
  • Embodiments of the present disclosure provide a photosensitive composition for forming a color resist and a method of preparing a color filter substrate, a color filter substrate.
  • a photosensitive composition for forming a color resist comprising: at least two color resist precursors; and at least two photosensitizers. Each of the at least two photosensitizers is used to initiate polymerization of a corresponding one of the at least two color resist precursors to form the color resist.
  • the sensitive wavelengths of the at least two photosensitizers are different from each other.
  • the sensitive wavelength of the at least two photosensitizers is in the ultraviolet range.
  • the at least two color resist precursors comprise a monomer material.
  • the at least two color resist precursors include first, second, and third color resist precursors
  • the at least two photosensitizers include before the first color resist a first photosensitive initiator of the body, a second photosensitive initiator corresponding to the second color resist precursor, and a third photosensitive initiator corresponding to the third color resist precursor.
  • the third color resist precursor is formed by combining a third base monomer material with a third pigment
  • R 3 is a third group for binding molecules of the third pigment.
  • R' is a phenyl group.
  • the first photoinitiator comprises a thioxanthone molecule
  • the second photoinitiator comprises a triarylsulfonium salt
  • the third photoinitiator comprises a diaryliodonium salt.
  • the first photosensitive starter comprises isopropyl thioxanthone
  • the second photosensitive starter comprises Ar 3 SKCl
  • the third photosensitive starter comprises Ar 2 IBF 6 or Ar 2 ISbF 6 , wherein Ar is an aryl group.
  • the first group is MgBr
  • the first pigment includes a pigment R254
  • the second group is R"OZn
  • the second pigment includes a pigment G58
  • the group is R"OCu
  • the third pigment comprises pigment B15:6, wherein R" is an alkyl group.
  • a method of preparing a color filter substrate comprising: providing a substrate; applying a photosensitive composition for forming a color resist on the substrate; and patterning the photosensitive composition To form at least two color resists.
  • the photosensitive composition includes at least two color resistive precursors and at least two photosensitizers. Each of the at least two photosensitizers is used to initiate polymerization of a corresponding one of the at least two color resist precursors to form the color resist.
  • the sensitive wavelengths of the at least two photosensitizers are different from each other.
  • the sensitive wavelength of the at least two photosensitizers is in the ultraviolet range.
  • the patterning includes: providing at least two mask sheets having different pattern configurations; exposing the photosensitive composition by using light of different wavelengths respectively by each of the at least two mask sheets Wherein the wavelengths of light used for each exposure are different from each other; and the photosensitive composition is developed to form the at least two color resists.
  • the patterning includes: providing a mask; exposing the photosensitive composition N times through the mask, wherein N is equal to the number of the at least two photosensitive initiators; and developing The photosensitive composition forms the at least two color resists.
  • the wavelengths of light used for each exposure are different from each other.
  • the mask is moved in a given direction with a given step size between exposures.
  • the at least two color resist precursors comprise a monomer material.
  • the at least two color resist precursors include first, second, and third color resist precursors
  • the at least two photosensitizers include before the first color resist a first photosensitive initiator of the body, a second photosensitive initiator corresponding to the second color resist precursor, and a third photosensitive initiator corresponding to the third color resist precursor.
  • the third color resist precursor is formed by combining a third base monomer material with a third pigment
  • R 3 is a third group of molecules that bind the third pigment.
  • R' is a phenyl group.
  • the first photoinitiator comprises a thioxanthone molecule
  • the second photoinitiator comprises a triarylsulfonium salt
  • the third photoinitiator comprises a diaryliodonium salt.
  • the first group is MgBr
  • the first pigment includes a pigment R254
  • the second group is R"OZn
  • the second pigment includes a pigment G58
  • the group is R"OCu
  • the third pigment comprises pigment B15:6, wherein R" is an alkyl group.
  • before applying the photosensitive composition further comprising: forming an ITO layer on an opposite side of a side of the substrate on which the photosensitive composition is to be applied; and at the substrate A patterned black matrix is formed on one side.
  • the at least two color resists after forming the at least two color resists, further comprising: forming a flat layer on a top surface of the formed structure; and forming a support pillar on the flat layer.
  • a color film substrate is provided.
  • the color filter substrate is prepared by a method of producing a color filter substrate according to the second aspect of the embodiments of the present disclosure.
  • a photosensitive composition for forming a color resist is provided. Further aspects and ranges of this sensibility of sensitization will become apparent from the description provided herein. It should be understood that various aspects of the present application can be implemented alone or in combination with one or more other aspects. It should be understood that the description and specific examples are not intended to limit the scope of the application.
  • FIG. 1 is a partial flow chart of a method of preparing a color filter substrate in accordance with an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional view of a color filter substrate after application of a photosensitive composition in accordance with a method of an embodiment of the present disclosure
  • FIG. 3 is a schematic cross-sectional view of a color filter substrate after forming first, second, and third color resists in accordance with a method of an embodiment of the present disclosure
  • FIG. 4 is a flow chart of a method of patterning a photosensitive composition in accordance with a method of an embodiment of the present disclosure
  • FIG. 5 is a schematic illustration of an exposure photosensitive composition in accordance with a method of an embodiment of the present disclosure
  • FIG. 6 is a schematic illustration of an exposure photosensitive composition of a method in accordance with an embodiment of the present disclosure
  • FIG. 7 is a schematic illustration of an exposure photosensitive composition in accordance with a method of an embodiment of the present disclosure
  • FIG. 8 is a schematic cross-sectional view of an exposed color filter substrate in accordance with a method of an embodiment of the present disclosure
  • FIG. 9 is a flow chart of a method of patterning a photosensitive composition in accordance with a method of an embodiment of the present disclosure.
  • FIG. 10 is a schematic illustration of an exposure photosensitive composition in accordance with a method of an embodiment of the present disclosure
  • FIG. 11 is a schematic illustration of an exposure photosensitive composition in accordance with a method of an embodiment of the present disclosure
  • FIG. 12 is a schematic illustration of an exposure photosensitive composition in accordance with a method of an embodiment of the present disclosure
  • FIG. 13 is a flow chart of a method of preparing a color filter substrate in accordance with an embodiment of the present disclosure
  • FIG. 14 is a schematic cross-sectional view of a color filter substrate after forming an ITO layer in accordance with a method of an embodiment of the present disclosure
  • FIG. 15 is a schematic cross-sectional view of a color filter substrate after forming a black matrix in accordance with a method of an embodiment of the present disclosure
  • 16 is a schematic cross-sectional view of a color filter substrate after forming first, second, and third color resists in accordance with a method of an embodiment of the present disclosure
  • 17 is a schematic cross-sectional view of a color filter substrate after forming a flat layer in accordance with a method of an embodiment of the present disclosure
  • FIG. 18 is a schematic cross-sectional view of a color filter substrate after forming a support post in accordance with a method of an embodiment of the present disclosure.
  • an element or layer when an element or layer is referred to as being “on” another element or layer, it may be directly on the other element or layer, or an element or layer may be present; likewise, when the element or layer is When the other element or layer is "under”, it may be directly under the other element or layer, or there may be at least one intermediate element or layer; when the element or layer is referred to as being between the two or two layers It may be a single element or layer between two or two layers, or more than one intermediate element or layer may be present.
  • a photosensitive composition for forming a color resist is provided.
  • the photosensitive composition is used for the preparation of a color resist, it is only necessary to apply the color resist material once, and the color resist of different colors can be obtained in a single development regardless of the number of exposures. Thereby, the process of preparing the color resistance can be simplified. Thereby, the process of preparing the color filter substrate can be simplified, and the manufacturing cost can be saved.
  • the photosensitive composition according to an embodiment of the present disclosure may include at least two color resist precursors and at least two photosensitizers.
  • a color resist precursor refers to a material capable of forming a color resist by polymerization.
  • Each of the at least two photosensitizers is used to initiate polymerization of a corresponding one of the at least two color resist precursors to form a color resist. That is to say, the photosensitive initiator has a one-to-one correspondence with the color resist precursor.
  • a sensitizing initiator can only cause polymerization of a corresponding color resist precursor.
  • At least two color resist precursors may include first, second, and third color resist precursors.
  • the at least two photosensitizers may include a first photoinitiator corresponding to the first color resist precursor, a second photoinitiator corresponding to the second color resist precursor, and a third color resist precursor The third photosensitive initiator.
  • the number of types of color resist precursors disclosed in the embodiments of the present disclosure is merely exemplary and should not be construed as limiting the disclosure. That is, the number of kinds of the color resist precursors may be two, three or more.
  • the photosensitive composition includes: a first color resist precursor; a first photoinitiator corresponding to the first color resist precursor; a second color resist precursor; and a second color resist precursor a corresponding second photoinitiator; a third color resist precursor; and a third photoinitiator corresponding to the third color resist precursor.
  • the ratio of the color resist precursor and the photosensitive initiator in the photosensitive composition of the present disclosure can be determined according to actual needs, for example, according to the thickness of the color film or the like.
  • the first, second, and third color resist precursors, and the first, second, and third photosensitive initiators are uniformly mixed to obtain a photosensitive composition.
  • the photosensitive composition of the present disclosure may further include a suitable organic solvent. The color resist precursor, the photoinitiator, and the appropriate organic solvent are mutually soluble and uniformly mixed to obtain a photosensitive composition.
  • the first, second, and third color resist precursors may include a single material.
  • the first color resist precursor is formed by combining the first base monomer material with the first pigment.
  • the second color resist precursor is formed by combining the second base monomer material with the second pigment.
  • the third color resist precursor is formed by combining the third base monomer material with the third pigment.
  • R 3 is a third group of a molecule that binds the third pigment.
  • R' in the above chemical formula is a phenyl group.
  • the first, second, and third pigments are, for example, red, green, and blue pigments, respectively.
  • the first group R 1 may be MgBr;
  • the first pigment may include a pigment R254, that is, bis(p-chlorophenyl)-1,4-diketopyrrolopyrrole, the molecular formula is C 18 H 10 O 2 N 2 Cl 2 , the structural formula of which is represented by the following formula (1);
  • the second group R 2 may be R"OZn, wherein R" is an organic group, specifically, R" may be an alkyl group; the second pigment may include G58 having the formula: C 32 N 8 Cl 4 Br 12 Zn , the structural formula is as shown in the following formula (2);
  • the third group R 3 may be R"OCu, wherein, as described above, R" is an organic group, specifically, R" may be an alkyl group; and the third pigment may include B15:6 having a molecular formula of C 32 H 16 N 8 Cu, which has the structural formula shown in the following formula (3).
  • the first color resist precursor is obtained by combining the first base monomer material with the first pigment
  • the second color resist precursor is obtained by combining the second base monomer material with the second pigment
  • the third color is obtained.
  • the barrier precursor is obtained by combining a third base monomer material with a third pigment.
  • the first color resist precursor by CH 2 CHCOOR a first group R 1 in combination with a pigment to give a first molecule, i.e., by the pigment R254 in MgBr (the above formula (1))
  • the carbonyl group is subjected to an addition reaction;
  • the third color resist precursor passes through the third group in CR'R 3 CH 2 R 3 is obtained by combining a molecule of a third pigment, that is, a Cu-Cu metal bond is formed by a metal Cu atom complexed with R′OCu and a pigment B15:6 (shown in the above formula (3)).
  • the first photosensitive initiator capable of causing polymerization of the first color resist precursor described above is a thioxanthone molecule, and the structural formula is as shown in the following formula (4).
  • the R 4 alkyl group or the benzyl group; the second photosensitive initiator capable of causing polymerization of the second color resist precursor is a triarylsulfonium salt having a molecular formula of Ar 3 SM t X n , wherein Ar is The aryl group, M may be a non-metal element such as B, Sb, P, Cl, X may be an element such as F, O, etc., t and n are integers and are determined by the number of atoms forming a chemical bond; and can cause the above third color resist
  • the third photoinitiator for the bulk polymerization is a diaryliodonium salt having a molecular formula of Ar 2 IN t Y n , wherein Ar is an aryl group, N may be a metal element such as K or Mg, and Y may be Cl. Halogen such as Br, t and n are integers and are determined by the number of atoms forming a chemical bond.
  • the second photosensitive starter may be Ar 3 SKCl or Ar 3 SMgBr.
  • the third photosensitive initiator may be Ar 3 SPF 6 , Ar 3 SClO 4 , Ar 2 IBF 6 or Ar 2 ISbF 6
  • the first photosensitive initiator is isopropyl thioxanthone, and the structural formula is represented by the following formula (5);
  • the second photosensitive initiator is Ar 3 SKCl, when Ar is a benzene ring, the second photosensitive initiator is C 18 H 15 SKCl, the name is triphenylchloro potassium sulfonium salt; and the third photosensitive initiator Is Ar 2 IBF 6 or Ar 2 ISbF 6 , when Ar is a benzene ring, the third photosensitive initiator is C 12 H 10 IBF 6 , the name is diphenylfluoroboronium iodide salt, or C 12 H 10 ISbF 6 , the name is diphenylfluoroindole iodonium salt.
  • the sensitive wavelengths of the first, second and third photosensitive initiators are different from each other.
  • the sensitive wavelength refers to the wavelength of light that is capable of causing a chemical reaction of the photoinitiator.
  • a photoinitiator undergoes a cleavage reaction under excitation of light having a sensitive wavelength to generate a cleavage product such as a radical, a cation or an anion.
  • the sensitive wavelengths of the first, second and third photosensitive starters are in the ultraviolet range. It should be understood that herein, the ultraviolet range refers to the range of ultraviolet light having a wavelength of light of from about 10 nm to about 400 nm.
  • a method of preparing a color filter substrate is also provided.
  • the method can simplify the process of preparing the color film substrate and save manufacturing cost.
  • step S101 a substrate is provided; in step S108, a photosensitive composition for forming a color resist is applied on the substrate; and in step S110, the photosensitive composition is patterned to form a color having a different color. At least two color resists.
  • FIG. 2 is a schematic cross-sectional view of a color filter substrate after application of a photosensitive composition in accordance with a method of an embodiment of the present disclosure.
  • 3 is a schematic cross-sectional view of a color filter substrate after forming first, second, and third color resists in accordance with a method of an embodiment of the present disclosure.
  • the photosensitive composition 100 is applied on the substrate 200.
  • the photosensitive composition 100 is patterned to form first, second, and third color resists 111, 121, and 131.
  • the photosensitive composition 100 has been described in detail above and will not be described again.
  • the first, second, and third color resists 111, 121, and 131 are red, green, and blue color resists, respectively.
  • the patterning in step S110 may include: providing at least two masks having different pattern configurations; exposing the photosensitive composition by using light of different wavelengths respectively by each of the at least two masks, wherein each time The wavelengths of the light used for the exposure are different from each other; and the photosensitive composition is developed to form at least two color resists.
  • step S110 in FIG. 1 may include: providing at least two masks in step S1101; exposing the photosensitive composition through at least two masks in step S1102; and developing in step S1103 in step S1103 Photosensitive composition.
  • FIG. 5 through 7 are schematic views of an exposure photosensitive composition in accordance with a method of an embodiment of the present disclosure.
  • a first mask 710 having a first pattern is provided.
  • the first mask 710 designs the opening pattern only at a position corresponding to the first region 110 where the first color resist 111 is to be formed.
  • the photosensitive composition 100 in the first region 110 is irradiated with the first ultraviolet light.
  • the first photosensitive initiator in the photosensitive composition 100 in the first region 110 is cleaved under irradiation of the first ultraviolet light to generate a first active species.
  • the first active species then polymerizes the first color resist precursor such that the first color resist precursor is deposited, thereby forming a first color resist 111.
  • a second mask 720 having a second pattern is provided.
  • the second mask 720 designs the opening pattern only at a position corresponding to the second region 120 where the second color resist 121 is to be formed.
  • the photosensitive composition 100 in the second region 120 is irradiated with the second ultraviolet light.
  • the second photosensitive initiator in the photosensitive composition 100 in the second region 120 is cleaved under irradiation of the second ultraviolet light to generate a second active species.
  • the second active species then polymerizes the second color resist precursor such that the second color resist precursor is deposited, thereby forming a second color resist 121.
  • a third mask 730 having a third pattern is provided.
  • the third mask 730 designs the opening pattern only at a position corresponding to the third region 130 where the third color resist 131 is to be formed.
  • the photosensitive composition 100 in the third region 130 is irradiated with the third ultraviolet light.
  • the third photosensitive initiator in the photosensitive composition 100 in the third region 130 is cleaved under irradiation of the third ultraviolet light to generate a third active species.
  • the third active species then polymerizes the third color resist precursor such that the third color resist precursor is deposited, thereby forming a third color resist 131.
  • design patterns of the first, second, and third masks may be the same or different. This disclosure does not specifically limit this.
  • the wavelengths of the first, second, and third ultraviolet lights are different from each other.
  • the first ultraviolet light can only cleave the corresponding first photoinitiator to generate the first active species
  • the second ultraviolet light can only cleave the corresponding second photoinitiator to generate the second active species
  • the triple ultraviolet light can only cleave its corresponding third photoinitiator to form a third active species.
  • the first active species can only polymerize with the corresponding first color resist precursor
  • the second active species can only polymerize the second color resist precursor corresponding thereto
  • the third active species can only A polymerization reaction occurs in the corresponding third color resist precursor.
  • the first photosensitive starter when it is isopropyl thioxanthone (as shown in the above formula (5)), it has a ratio of from about 380 nm to about 400 nm.
  • the first active species produced by the cleavage of the first ultraviolet light of the wavelength is an isopropyl thioxanthone intermediate having the structural formula shown in the following formula (6).
  • the second photoinitiator is Ar 3 SKCl
  • the second active species which are cleaved by irradiation with a second ultraviolet light having a wavelength of from about 244 nm to about 264 nm is KCl-OH.
  • the third photoinitiator is Ar 2 IBF 6 or Ar 2 ISbF 6
  • the third active species which are cleaved by irradiation with a third ultraviolet light having a wavelength of about 217 nm to about 237 nm is HBF 6 or HSbF 6 .
  • Ar is an aryl group.
  • first to third active species are only present during the polymerization process and are not present separately in the final product.
  • FIG. 8 is a schematic cross-sectional view of an exposed color filter substrate in accordance with a method of an embodiment of the present disclosure. As shown in FIG. 8, the first, second, and third color resist precursors in which polymerization occurs are deposited to form first, second, and third color resists 111, 121, and 131.
  • step S1103 the non-photosensitive portion of the photosensitive composition 100 in Fig. 8 is developed, thereby forming a structure as shown in Fig. 3.
  • the patterning in step S110 may include: providing a mask; exposing the photosensitive composition N times through the mask, wherein N is equal to at least The amount of two photosensitizers; and developing the photosensitive composition to form at least two color resists.
  • the wavelengths of light used for each exposure are different from each other.
  • the mask is moved in a given direction with a given step size between exposures.
  • step S110 in FIG. 1 may include: providing a mask in step S1101'; exposing the photosensitive composition through the mask in step S1102'; and developing the photosensitive combination in step S1103' Things.
  • the mask may have a lateral dimension larger than the lateral dimension of the color filter substrate to be prepared.
  • the pattern of the mask is suitable for color resistance of different colors.
  • FIGS. 10 through 12 are schematic views of an exposure photosensitive composition in accordance with a method of an embodiment of the present disclosure.
  • a fourth mask having a fourth pattern is provided.
  • the photosensitive composition was exposed N times through a fourth mask, where N is equal to the number of at least two photosensitive starters.
  • a fourth mask is provided to perform 3 exposures of the photosensitive composition.
  • a fourth mask 740 having a fourth pattern is provided.
  • the opening of the fourth mask 740 is aligned with the first region 110 where the first color resist 111 is to be formed.
  • the photosensitive composition 100 in the first region 110 is irradiated with the first ultraviolet light.
  • the first photosensitive initiator in the photosensitive composition 100 in the first region 110 is cleaved under irradiation of the first ultraviolet light to generate a first active species.
  • the first active species then polymerizes the first color resist precursor such that the first color resist precursor is deposited, thereby forming a first color resist 111.
  • the opening of the fourth mask 740 is aligned with the second region 120 where the second color resist 121 is to be formed.
  • the photosensitive composition 100 in the second region 120 is irradiated with a second ultraviolet light.
  • the second photosensitive initiator in the photosensitive composition 100 in the second region 120 is cleaved under irradiation of the second ultraviolet light to generate a second active species.
  • the second active species then polymerizes the second color resist precursor such that the second color resist precursor is deposited, thereby forming a second color resist 121.
  • the opening of the fourth mask 740 is aligned with the third region 130 where the third color resist 131 is to be formed.
  • the photosensitive composition 100 in the third region 130 is irradiated with a third ultraviolet light.
  • the third photosensitive initiator in the photosensitive composition 100 in the third region 130 is cleaved under irradiation of the third ultraviolet light to generate a third active species.
  • the third active species then polymerizes the third color resist precursor such that the third color resist precursor is deposited, thereby forming a third color resist 131.
  • the structure as shown in FIG. 8 is obtained. That is, the first, second, and third color resist precursors in which the polymerization reaction occurs are deposited to form the first, second, and third color resists 111, 121, and 131.
  • step S1103' the non-photosensitive portion of the photosensitive composition 100 in Fig. 8 is developed, thereby forming a structure as shown in Fig. 3.
  • the fourth mask is moved in a given direction with a given step length between exposures.
  • the present disclosure does not specifically limit the size of the step size and the specific moving direction. The size of the step and the direction of movement can be determined according to actual needs.
  • FIG. 13 is a flow chart of a method of preparing a color filter substrate according to an embodiment of the present disclosure. As shown in FIG. 13, after step S101 and before step S108, further comprising: forming an ITO layer on the first side of the substrate in step S104; and forming a black matrix on the second side of the substrate in step S106 .
  • FIG. 14 is a schematic cross-sectional view of a color filter substrate after forming an ITO layer in accordance with a method of an embodiment of the present disclosure.
  • 15 is a schematic cross-sectional view of a color filter substrate after forming a black matrix in accordance with a method of an embodiment of the present disclosure.
  • an ITO layer 300 is formed on the first side 2001 of the substrate 200.
  • the first side 2001 is the opposite side of the side on which the photosensitive composition is to be applied.
  • a patterned black matrix 400 is formed on the second side 2002 of the substrate 200. This second side 2002 is the side on which the photosensitive composition is to be applied.
  • FIG. 16 is a schematic cross-sectional view of a color filter substrate after forming first, second, and third color resists in accordance with a method of an embodiment of the present disclosure. Specifically, as shown in FIG. 16, first, second, and third color resists 111, 121, and 131 are formed on the second side 2002 of the substrate 200 and on the black matrix 400.
  • step S110 that is, after forming at least two color resists, further comprising: forming a flat layer on at least two color resists and a black matrix in S112; and in S114, A support column is formed on the flat layer.
  • FIG. 17 is a schematic cross-sectional view of a color filter substrate after forming a flat layer in accordance with a method of an embodiment of the present disclosure.
  • 18 is a schematic cross-sectional view of a color filter substrate after forming a support post in accordance with a method of an embodiment of the present disclosure.
  • a flat layer 500 is formed on the first, second, and third color resists 111, 121, and 131 and on the black matrix 400.
  • a patterned support pillar 600 is formed on the flat layer 500.
  • a color film substrate is also provided.
  • the color filter substrate is prepared by the method of preparing a color filter substrate as described above.
  • the color filter substrate 1000 includes: a substrate 200; an ITO layer 300 on the first side 2001 of the substrate 200; a black matrix 400 on the second side 2002 of the substrate 200; and a second side on the substrate 200 First, second, and third color resists 111, 121, and 131 on the black matrix 400; and a flat layer 500 on the black matrix 400 and the first, second, and third color resists 111, 121, and 131; A support post 600 on the flat layer 500.
  • a photosensitive composition for forming a color resist is provided.
  • the photosensitive composition is used for the preparation of a color resist, it is only necessary to apply the color resist material once, and the color resist of different colors can be obtained in a single development regardless of the number of exposures. Thereby, the process of preparing the color resistance can be simplified.
  • a method of preparing a color filter substrate which utilizes the above-described photosensitive composition to form color resists of different colors, thereby simplifying the process of preparing a color filter substrate and saving manufacturing costs.

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Abstract

本公开的实施例涉及一种用于形成色阻的感光组合物以及制备彩膜基板的方法、彩膜基板。所述感光组合物，包括：至少两种色阻前体；以及至少两种感光起始剂，所述至少两种感光起始剂中的每一种用于引发所述至少两种色阻前体中的对应一种色阻前体的聚合反应以形成所述色阻。

Description

用于形成色阻的感光组合物以及制备彩膜基板的方法、彩膜基板
相关申请的交叉引用
本申请要求于2017年12月14日递交的中国专利申请第201711341225.3号优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及显示技术领域，尤其涉及一种用于形成色阻的感光组合物以及制备彩膜基板的方法、彩膜基板。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，简称为TFT-LCD)是一种重要的平板显示设备。随着显示器制造技术的发展，液晶显示器技术发展迅速，已经逐渐取代了传统的显像管显示器而成为未来平板显示器的主流。液晶显示器由于具有重量轻、体积小、无辐射、节能效果好、分辨率高等优势而广泛应用于电视机、电脑、手机等领域。
发明内容
本公开的实施例提供了一种用于形成色阻的感光组合物以及制备彩膜基板的方法、彩膜基板。
根据本公开实施例的第一方面，提供了一种用于形成色阻的感光组合物，其包括：至少两种色阻前体；以及至少两种感光起始剂。所述至少两种感光起始剂中的每一种用于引发所述至少两种色阻前体中的对应一种色阻前体的聚合反应以形成所述色阻。
在本公开的实施例中，所述至少两种感光起始剂的敏感波长彼此不同。
在本公开的实施例中，所述至少两种感光起始剂的所述敏感波长处于紫外范围。
在本公开的实施例中，所述至少两种色阻前体包括单体材料。
在本公开的实施例中，所述至少两种色阻前体包括第一、第二和第三色阻前体，所述至少两种感光起始剂包括对应于所述第一色阻前体的第一感光起始剂、对应于所述第二色阻前体的第二感光起始剂和对应于所述第三色阻前体的第三感光起始剂。
在本公开的实施例中，所述第一色阻前体通过第一基础单体材料与第一颜料结合而形成，所述第一基础单体材料包括CH 2＝CHCOOR 1，R 1为用于结合所述第一颜料的分子的第一基团，所述第二色阻前体通过第二基础单体材料与第二颜料结合而形成，所述第二基础单体材料包括CR’R 2＝C(CN) 2，R 2为用于结合所述第二颜料的分子的第二基团，所述第三色阻前体通过第三基础单体材料与第三颜料结合而形成，所述第三基础单体材料包括CR’R 3＝CH 2，R 3为用于结合所述第三颜料的分子的第三基团。R’为苯基。所述第一感光起始剂包括硫杂蒽酮类分子，所述第二感光起始剂包括三芳基硫鎓盐，所述第三感光起始剂包括二芳基碘鎓盐。
在本公开的实施例中，所述第一感光起始剂包括异丙基硫杂蒽酮，所述第二感光起始剂包括Ar 3SKCl，所述第三感光起始剂包括Ar 2IBF 6或Ar 2ISbF 6，其中，Ar为芳基。
在本公开的实施例中，所述第一基团为MgBr，所述第一颜料包括颜料R254；所述第二基团为R”OZn，所述第二颜料包括颜料G58；所述第三基团为R”OCu，所述第三颜料包括颜料B15:6，其中，R”为烷基。
根据本公开实施例的第二方面，提供了一种制备彩膜基板的方法，包括：提供基板；在所述基板上施加用于形成色阻的感光组合物；以及图案化所述感光组合物以形成至少两种色阻。所述感光组合物包括至少两种色阻前体以及至少两种感光起始剂。所述至少两种感光起始剂中的每一种用于引发所述至少两种色阻前体中的对应一种色阻前体的聚合反应以形成所述色阻。
在本公开的实施例中，所述至少两种感光起始剂的敏感波长彼此不同。
在本公开的实施例中，所述至少两种感光起始剂的所述敏感波长处于紫外范围。
在本公开的实施例中，所述图案化包括：提供具有不同图案配置的至少两个掩模板；通过所述至少两个掩模板中的每一个分别使用不同波长的光曝光所述感光组合物，其中，每次曝光使用的光的波长彼此不同；以及显影所述感光组合物以形成所述至少两种色阻。
在本公开的实施例中，所述图案化包括：提供一个掩模板；通过所述掩模板曝光所述感光组合物N次，其中N等于所述至少两种感光起始剂的数量；以及显影所述感光组合物以形成所述至少两种色阻。每次曝光使用的光的波长彼此不同。在两次曝光之间以给定的步长沿给定的方向移动所述掩模板。
在本公开的实施例中，所述至少两种色阻前体包括单体材料。
在本公开的实施例中，所述至少两种色阻前体包括第一、第二和第三色阻前体，所述至少两种感光起始剂包括对应于所述第一色阻前体的第一感光起始剂、对应于所述第二色阻前体的第二感光起始剂和对应于所述第三色阻前体的第三感光起始剂。
在本公开的实施例中，所述第一色阻前体通过第一基础单体材料与第一颜料结合而形成，所述第一基础单体材料包括CH 2＝CHCOOR 1，R 1为用于结合所述第一颜料的分子的第一基团，所述第二色阻前体通过第二基础单体材料与第二颜料结合而形成，所述第二基础单体材料包括CR’R 2＝C(CN) 2，R 2为用于结合所述第二颜料的分子的第二基团，所述第三色阻前体通过第三基础单体材料与第三颜料结合而形成，所述第三基础单体材料包括CR’R 3＝CH 2，R 3为结合所述第三颜料的分子的第三基团。R’为苯基。所述第一感光起始剂包括硫杂蒽酮类分子，所述第二感光起始剂包括三芳基硫鎓盐，所述第三感光起始剂包括二芳基碘鎓盐。
在本公开的实施例中，所述第一基团为MgBr，所述第一颜料包括颜料R254；所述第二基团为R”OZn，所述第二颜料包括颜料G58；所述第三基 团为R”OCu，所述第三颜料包括颜料B15:6，其中，R”为烷基。
在本公开的实施例中，在施加所述感光组合物之前，还包括：在所述基板的待施加所述感光组合物的一侧的相对侧上形成ITO层；以及在所述基板的所述一侧上形成图案化的黑矩阵。
在本公开的实施例中，在形成所述至少两个色阻之后，还包括：在所形成的结构的顶表面上形成平坦层；以及在所述平坦层上形成支撑柱。
根据本公开实施例的第三方面，提供了一种彩膜基板。所述彩膜基板通过根据本公开实施例的第二方面的制备彩膜基板的方法制备。
在本公开的实施例中，提供了一种用于形成色阻的感光组合物。将该感光适应性的进一步的方面和范围从本文中提供的描述变得明显。应当理解，本申请的各个方面可以单独或者与一个或多个其他方面组合实施。还应当理解，本文中的描述和特定实施例旨在仅说明的目的并不旨在限制本申请的范围。
附图说明
本文中描述的附图用于仅对所选择的实施例的说明的目的，并不是所有可能的实施方式，并且不旨在限制本申请的范围，其中：
图1是根据本公开实施例的制备彩膜基板的方法的部分流程图；
图2是根据本公开实施例的方法的施加感光组合物之后的彩膜基板的截面示意图；
图3是根据本公开实施例的方法的形成第一、第二和第三色阻之后的彩膜基板的截面示意图；
图4是根据本公开实施例的方法的图案化感光组合物的方法流程图；
图5是根据本公开实施例的方法的曝光感光组合物的示意图；
图6是根据本公开实施例的方法的曝光感光组合物的示意图；
图7是根据本公开实施例的方法的曝光感光组合物的示意图；
图8是根据本公开实施例的方法的曝光后的彩膜基板的截面示意图；
图9是根据本公开实施例的方法的图案化感光组合物的方法流程图；
图10是根据本公开实施例的方法的曝光感光组合物的示意图；
图11是根据本公开实施例的方法的曝光感光组合物的示意图；
图12是根据本公开实施例的方法的曝光感光组合物的示意图；
图13是根据本公开实施例的制备彩膜基板的方法的流程图；
图14是根据本公开实施例的方法的形成ITO层之后的彩膜基板的截面示意图；
图15是根据本公开实施例的方法的形成黑矩阵之后的彩膜基板的截面示意图；
图16是根据本公开实施例的方法的形成第一、第二和第三色阻之后的彩膜基板的截面示意图；
图17是根据本公开实施例的方法的形成平坦层之后的彩膜基板的截面示意图；以及
图18是根据本公开实施例的方法的形成支撑柱之后的彩膜基板的截面示意图。
贯穿这些附图的各个视图，相应的参考编号指示相应的部件或特征。
具体实施方式
首先，需要说明的是，除非上下文中另外明确地指出，否则在本文和所附权利要求中所使用的词语的单数形式包括复数，反之亦然。因而，当提及单数时，通常包括相应术语的复数。相似地，措辞“包含”和“包括”将解释为包含在内而不是独占性地。同样地，术语“包括”和“或”应当解释为包括在内的，除非本文中另有说明。在本文中使用术语“实例”之处，特别是当其位于一组术语之后时，所述“实例”仅仅是示例性的和阐述性的，且不应当被认为是独占性的或广泛性的。
另外，还需要说明的是，在本公开的描述中，术语“上”、“之上”、“下”、“之下”、“顶”、“底”、“之间”等指示的方位或位置关系为基于附图所示的方 位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。此外，当元件或层被称为在另一元件或层“上”时，它可以直接在该另一元件或层上，或者可以存在中间的元件或层；同样，当元件或层被称为在另一元件或层“下”时，它可以直接在该另一元件或层下，或者可以存在至少一个中间的元件或层；当元件或层被称为在两元件或两层“之间”时，其可以为该两元件或两层之间的唯一的元件或层，或者可以存在一个以上的中间元件或层。
本公开中描绘的流程图仅仅是一个例子。在不脱离本公开精神的情况下，可以存在该流程图或其中描述的步骤的很多变型。例如，所述步骤可以以不同的顺序进行，或者可以添加、删除或者修改步骤。这些变型都被认为是所要求保护的方面的一部分。
现将参照附图更全面地描述本公开的示例性实施例。
目前，制备彩膜基板的彩色色阻时，需要多次沉积色阻材料以及多次显影才能最终得到彩色色阻，工艺比较复杂。
在本公开的实施例中，提供一种用于形成色阻的感光组合物。当将该感光组合物用于制备色阻时，仅需施加一次色阻材料，并且不管曝光几次，只需一次显影即可得到不同颜色的色阻。由此，能够简化制备色阻的工艺。从而，能够简化制备彩膜基板的工艺，节约制造成本。
根据本公开的实施例的感光组合物可以包括至少两种色阻前体以及至少两种感光起始剂。在本文中，色阻前体指能够通过聚合反应形成色阻的材料。该至少两种感光起始剂中的每一种用于引发至少两种色阻前体中的对应一种色阻前体的聚合反应以形成色阻。也就是说，感光起始剂与色阻前体一一对应。一种感光起始剂只能引起与其对应的一种色阻前体的聚合反应。
具体地，在本公开的实施例中，至少两种色阻前体可以包括第一、第二和第三色阻前体。至少两种感光起始剂可以包括对应于第一色阻前体的 第一感光起始剂、对应于第二色阻前体的第二感光起始剂和对应于第三色阻前体的第三感光起始剂。应理解，本公开实施例公开的色阻前体的种类数仅仅为示例性的且不应被视为对本公开的限定。也就是，色阻前体的种类数可以为两种、三种或更多种。
在本公开的实施例中，感光组合物包括：第一色阻前体；与第一色阻前体对应的第一感光起始剂；第二色阻前体；与第二色阻前体对应的第二感光起始剂；第三色阻前体；以及与第三色阻前体对应的第三感光起始剂。可以理解，本公开的感光组合物中的色阻前体和感光起始剂的比率可以根据实际需要确定，例如根据彩膜的厚度等进行设定。在本公开的实施例中，使第一、第二和第三色阻前体、以及第一、第二和第三感光起始剂均匀混合得到感光组合物。此外，本公开的感光组合物还可以包括适当的有机溶剂。色阻前体、感光起始剂以及该适当的有机溶剂彼此互溶、均匀混合以得到感光组合物。
在本公开的示例性实施例中，第一、第二和第三色阻前体可以包括单体材料。第一色阻前体通过第一基础单体材料与第一颜料结合而形成。在本公开的示例性实施例中，第一基础单体材料可以为丙烯酸酯类单体，其化学式为CH 2＝CHCOOR 1，其中R 1为用于结合第一颜料的分子的第一基团。第二色阻前体通过第二基础单体材料与第二颜料结合而形成。在本公开的示例性实施例中，第二基础单体材料可以为偏二氰乙烯类单体，其化学式为CR’R 2＝C(CN) 2，R 2为结合用于第二颜料的分子的第二基团。第三色阻前体通过第三基础单体材料与第三颜料结合而形成。在本公开的示例性实施例中，第三基础单体材料可以为α-烯类单体，其化学式为CR’R 3＝CH 2，R 3为结合第三颜料的分子的第三基团。需要说明的是，上述化学式中的R’为苯基。
需要说明的是，在本公开的示例性实施例中，第一、第二和第三颜料例如分别为红色、绿色和蓝色颜料。
在本公开的示例性实施例中，第一基团R 1可以为MgBr；第一颜料可 以包括颜料R254，即，双(对氯苯基)-1，4-二酮吡咯并吡咯，分子式为C 18H 10O 2N 2Cl 2，其结构式如下式(1)所示；
[根据细则26改正18.09.2018]　
Figure WO-DOC-FIGURE-1
第二基团R 2可以为R”OZn，其中，R”为有机基团，具体地，R”可以为烷基；第二颜料可以包括G58，分子式为：C 32N 8Cl 4Br 12Zn，其结构式如下式(2)所示；
[根据细则26改正18.09.2018]　
Figure WO-DOC-FIGURE-2
第三基团R 3可以为R”OCu，其中，如上所述，R”为有机基团，具体地，R”可以为烷基；第三颜料可以包括B15:6，分子式为C 32H 16N 8Cu，其结构式如下式(3)所示。
[根据细则26改正18.09.2018]　
Figure WO-DOC-FIGURE-3
需要说明的是，第一色阻前体通过第一基础单体材料与第一颜料结合而得到，第二色阻前体通过第二基础单体材料与第二颜料结合而得到，第三色阻前体通过第三基础单体材料与第三颜料结合而得到。具体地，第一色阻前体通过CH 2＝CHCOOR 1中的第一基团R 1与第一颜料的分子结合而得到，即，通过MgBr与颜料R254(如上式(1)所示)中的羰基发生加 成反应而得到；第二色阻前体通过CR’R 2＝C(CN) 2中的第二基团R 2与第二颜料的分子结合而得到，即，通过R”OZn与颜料G58(如上式(2)所示)中的络合的金属Zn原子形成Zn-Zn金属键而得到；以及第三色阻前体通过CR’R 3＝CH 2中的第三基团R 3与第三颜料的分子结合而得到，即，通过R”OCu与颜料B15:6(如上式(3)所示)中的络合的金属Cu原子形成Cu-Cu金属键而得到。
在本公开的示例性实施例中，能够引起上述第一色阻前体发生聚合反应的第一感光起始剂为硫杂蒽酮类分子，其结构式如下式(4)所示，
[根据细则26改正18.09.2018]　
Figure WO-DOC-FIGURE-4
其中，R 4烷基或苄基；能够引起上述第二色阻前体发生聚合反应的第二感光起始剂为三芳基硫鎓盐，其分子式为Ar 3SM tX n，其中，Ar为芳基，M可以为B、Sb、P、Cl等非金属元素，X可以为F、O等元素，t和n为整数且由形成化学键的原子数决定；以及能够引起上述第三色阻前体发生聚合反应的第三感光起始剂为二芳基碘鎓盐，其分子式为Ar 2IN tY n，其中，Ar为芳基，N可以为K、Mg等金属元素，Y可以为Cl、Br等卤素，t和n为整数且由形成化学键的原子数决定。
作为示例，第二感光起始剂可以为Ar 3SKCl或Ar 3SMgBr。第三感光起始剂可以为Ar 3SPF 6、Ar 3SClO 4、Ar 2IBF 6或Ar 2ISbF 6
作为具体的示例，第一感光起始剂为异丙基硫杂蒽酮，其结构式如下式(5)所示；
[根据细则26改正18.09.2018]　
Figure WO-DOC-FIGURE-5
第二感光起始剂为Ar 3SKCl，当Ar为苯环时，第二感光起始剂为C 18H 15SKCl，其名称为三苯基氯钾硫鎓盐；以及第三感光起始剂为Ar 2IBF 6或Ar 2ISbF 6，当Ar为苯环时，第三感光起始剂为C 12H 10IBF 6，其名称为二 苯基氟硼碘鎓盐，或者为C 12H 10ISbF 6，其名称为二苯基氟锑碘鎓盐。
需要说明的是，第一、第二和第三感光起始剂的敏感波长彼此不同。应理解，在本文中，敏感波长表示能够引起感光起始剂发生化学反应的光的波长。例如，感光起始剂在具有敏感波长的光的激发下发生裂解反应生成诸如自由基、阳离子或阴离子的裂解产物。作为示例，第一、第二和第三感光起始剂的敏感波长处于紫外范围。应理解，在本文中，紫外范围指的是光波长在约10nm至约400nm的紫外光范围。
在本公开的示例性实施例中，还提供了一种制备彩膜基板的方法。该方法能够简化制备彩膜基板的工艺，节约制造成本。
下面将参考图1至图18详细地描述根据本公开的实施例的制备彩膜基板的方法。
图1是根据本公开实施例的制备彩膜基板的方法的部分流程图。如图1所示，在步骤S101中，提供基板；在步骤S108中，在基板上施加用于形成色阻的感光组合物；以及在步骤S110中，图案化感光组合物以形成具有不同颜色的至少两种色阻。
图2是根据本公开实施例的方法的施加感光组合物之后的彩膜基板的截面示意图。图3是根据本公开实施例的方法的形成第一、第二和第三色阻之后的彩膜基板的截面示意图。具体地，如图2所示，在基板200上施加感光组合物100。如图3所示，图案化感光组合物100以形成第一、第二和第三色阻111、121和131。应注意，在上文中已详细描述了感光组合物100，在此将不再赘述。需要说明的是，在本公开的示例性实施例中，第一、第二和第三色阻111、121和131分别为红色、绿色和蓝色色阻。
一方面，步骤S110中的图案化可以包括：提供具有不同图案配置的至少两个掩模板；通过该至少两个掩模板中的每一个分别使用不同波长的光曝光感光组合物，其中，每次曝光使用的光的波长彼此不同；以及显影感光组合物以形成至少两种色阻。
接着将描述图案化感光组合物的具体过程。
图4是根据本公开实施例的方法的图案化感光组合物的方法流程图。如图4所示，图1中的步骤S110可以包括：在步骤S1101中，提供至少两种掩模板；在步骤S1102中，通过至少两种掩模板曝光感光组合物；以及在步骤S1103中，显影感光组合物。
图5至图7是根据本公开实施例的方法的曝光感光组合物的示意图。具体地，在图5中，提供具有第一图案的第一掩模板710。第一掩模板710只在与要形成第一色阻111的第一区域110对应的位置设计开口图案。曝光时，采用第一紫外光照射第一区域110内的感光组合物100。由此，第一区域110内的感光组合物100中的第一感光起始剂在第一紫外光的照射下裂解而生成第一活性种。该第一活性种然后使第一色阻前体发生聚合反应，使得第一色阻前体发生沉积，从而形成第一色阻111。
在图6中，提供具有第二图案的第二掩模板720。第二掩模板720只在与要形成第二色阻121的第二区域120对应的位置设计开口图案。曝光时，采用第二紫外光照射第二区域120内的感光组合物100。由此，第二区域120内的感光组合物100中的第二感光起始剂在第二紫外光的照射下裂解而生成第二活性种。该第二活性种然后使第二色阻前体发生聚合反应，使得第二色阻前体发生沉积，从而形成第二色阻121。
在图7中，提供具有第三图案的第三掩模板730。第三掩模板730只在与要形成第三色阻131的第三区域130对应的位置设计开口图案。曝光时，采用第三紫外光照射第三区域130内的感光组合物100。由此，第三区域130内的感光组合物100中的第三感光起始剂在第三紫外光的照射下裂解而生成第三活性种。该第三活性种然后使第三色阻前体发生聚合反应，使得第三色阻前体发生沉积，从而形成第三色阻131。
需要说明的是，第一、第二和第三掩模板的设计图案可以相同，也可以不相同。本公开对此不作具体限定。
需要说明的是，第一、第二和第三紫外光的波长彼此不同。并且第一紫外光只能使与其对应的第一感光起始剂裂解以生成第一活性种，第二紫 外光只能使与其对应的第二感光起始剂裂解以生成第二活性种，第三紫外光只能使与其对应的第三感光起始剂裂解以生成第三活性种。此外，第一活性种只能使与其对应的第一色阻前体发生聚合反应，第二活性种只能使与其对应的第二色阻前体发生聚合反应，第三活性种只能使与其对应的第三色阻前体发生聚合反应。
根据前文所述，在本公开的示例性实施例中，当第一感光起始剂为异丙基硫杂蒽酮(如上式(5)所示)时，其在具有约380nm至约400nm的波长的第一紫外光的照射下裂解生成的第一活性种为异丙基硫杂蒽酮中间体，其结构式如下式(6)所示。
Figure PCTCN2018099212-appb-000006
当第二感光起始剂为Ar 3SKCl时，其在具有约244nm至约264nm波长的第二紫外光的照射下裂解生成的第二活性种为KCl-OH。当第三感光起始剂为Ar 2IBF 6或Ar 2ISbF 6，其在具有约217nm至约237nm的波长第三紫外光的照射下裂解生成的第三活性种为HBF 6或HSbF 6。如上文所述，Ar为芳基。
需要说明的是，上述第一至第三活性种，仅存在于聚合过程期间，不在最终产物中单独存在。
图8是根据本公开实施例的方法的曝光后的彩膜基板的截面示意图。如图8所示，发生聚合反应的第一、第二和第三色阻前体发生沉积形成第一、第二和第三色阻111、121和131。
然后，如在步骤S1103中所描述的，将图8中的感光组合物100的未感光部分显影掉，从而形成如图3所示的结构。
另一方面，在要制备的不同颜色的色阻的图案都相同的情况下，步骤S110中的图案化可以包括：提供一个掩模板；通过该掩模板曝光感光组合物N次，其中N等于至少两种感光起始剂的数量；以及显影感光组合物以 形成至少两种色阻。每次曝光使用的光的波长彼此不同。在两次曝光之间以给定的步长沿给定的方向移动该掩模板。
接着将描述图案化感光组合物的具体过程。
图9是根据本公开实施例的方法的图案化感光组合物的方法流程图。如图9所示，图1中的步骤S110可以包括：在步骤S1101’中，提供一个掩模板；在步骤S1102’中，通过掩模板曝光感光组合物；以及在步骤S1103’中，显影感光组合物。
需要说明的是，在该实施例中仅使用一个掩模板，该掩模板的横向尺寸可以大于要制备的彩膜基板的横向尺寸。并且该掩模板的图案适用于不同颜色的色阻。
图10至图12是根据本公开实施例的方法的曝光感光组合物的示意图。在本公开的示例性实施例中，提供具有第四图案的第四掩模板。通过第四掩模板曝光感光组合物N次，其中N等于至少两种感光起始剂的数量。作为一个示例，提供第四掩模板对感光组合物进行3次曝光。
具体地，在图10中，提供具有第四图案的第四掩模板740。将第四掩模板740的开口对准要形成第一色阻111的第一区域110。采用第一紫外光照射第一区域110内的感光组合物100。由此，第一区域110内的感光组合物100中的第一感光起始剂在第一紫外光的照射下裂解而生成第一活性种。该第一活性种然后使第一色阻前体发生聚合反应，使得第一色阻前体发生沉积，从而形成第一色阻111。
在图11中，将第四掩模板740的开口对准要形成第二色阻121的第二区域120。采用第二紫外光照射第二区域120内的感光组合物100。由此，第二区域120内的感光组合物100中的第二感光起始剂在第二紫外光的照射下裂解而生成第二活性种。该第二活性种然后使第二色阻前体发生聚合反应，使得第二色阻前体发生沉积，从而形成第二色阻121。
在图12中，将第四掩模板740的开口对准要形成第三色阻131的第三区域130。采用第三紫外光照射第三区域130内的感光组合物100。由此， 第三区域130内的感光组合物100中的第三感光起始剂在第三紫外光的照射下裂解而生成第三活性种。该第三活性种然后使第三色阻前体发生聚合反应，使得第三色阻前体发生沉积，从而形成第三色阻131。
由此，得到如图8所示的结构。也就是，发生聚合反应的第一、第二和第三色阻前体发生沉积形成第一、第二和第三色阻111、121和131。
然后，如在步骤S1103’中所描述的，将图8中的感光组合物100的未感光部分显影掉，从而形成如图3所示的结构。
需要说明的是，在两次曝光之间以给定的步长沿给定的方向移动第四掩模板。本公开对步长的大小以及具体移动方向不作具体限定。可以根据实际需要来确定步长的大小以及移动方向。
应注意，关于曝光的过程，在上文已作出详细的描述，在此不再赘述。
图13是根据本公开实施例的制备彩膜基板的方法的流程图。如图13所示，在步骤S101之后且在步骤S108之前还包括：在步骤S104中，在基板的第一侧上形成ITO层；以及在步骤S106中，在基板的第二侧上形成黑矩阵。
图14是根据本公开实施例的方法的形成ITO层之后的彩膜基板的截面示意图。图15是根据本公开实施例的方法的形成黑矩阵之后的彩膜基板的截面示意图。如图14所示，在基板200的第一侧2001上形成ITO层300。该第一侧2001为待施加感光组合物的一侧的相对侧。如图15所示，在基板200的第二侧2002上形成图案化的黑矩阵400。该第二侧2002为待施加感光组合物的一侧。
接着，如前文所述，在基板200上形成图案化的至少两种色阻。图16是根据本公开实施例的方法的形成第一、第二和第三色阻之后的彩膜基板的截面示意图。具体地，如图16所示，在基板200的第二侧2002以及在黑矩阵400上形成第一、第二和第三色阻111、121和131。
接下来，如图13所示，在步骤S110之后，即，在形成至少两种色阻之后还包括：在S112中，在至少两种色阻和黑矩阵上形成平坦层；以及在 S114中，在平坦层上形成支撑柱。
图17是根据本公开实施例的方法的形成平坦层之后的彩膜基板的截面示意图。图18是根据本公开实施例的方法的形成支撑柱之后的彩膜基板的截面示意图。如图17所示，在第一、第二和第三色阻111、121和131以及在黑矩阵400上形成平坦层500。如图18所示，在平坦层500上形成图案化的支撑柱600。
在本公开的示例性实施例中，还提供了一种彩膜基板。该彩膜基板通过如上所述的制备彩膜基板的方法而被制备。如图18所示，彩膜基板1000包括：基板200；位于基板200的第一侧2001上的ITO层300；位于基板200的第二侧2002上的黑矩阵400；位于基板200的第二侧2002和黑矩阵400上的第一、第二和第三色阻111、121和131；位于黑矩阵400和第一、第二和第三色阻111、121和131上的平坦层500；以及位于平坦层500上的支撑柱600。
在本公开的实施例中，提供一种用于形成色阻的感光组合物。当将该感光组合物用于制备色阻时，仅需施加一次色阻材料，并且不管曝光几次，只需一次显影即可得到不同颜色的色阻。由此，能够简化制备色阻的工艺。在本公开的实施例中，还提供了一种制备彩膜基板的方法，该方法利用上述感光组合物形成不同颜色的色阻，由此，能够简化制备彩膜基板的工艺，节约制造成本。
以上为了说明和描述的目的提供了实施例的前述描述。其并不旨在是穷举的或者限制本申请。特定实施例的各个元件或特征通常不限于特定的实施例，但是，在合适的情况下，这些元件和特征是可互换的并且可用在所选择的实施例中，即使没有具体示出或描述。同样也可以以许多方式来改变。这种改变不能被认为脱离了本申请，并且所有这些修改都包含在本申请的范围内。

Claims (20)

  1. 一种用于形成色阻的感光组合物，包括：
    至少两种色阻前体；以及
    至少两种感光起始剂，所述至少两种感光起始剂中的每一种用于引发所述至少两种色阻前体中的对应一种色阻前体的聚合反应以形成所述色阻。
  2. 根据权利要求1所述的感光组合物，其中，所述至少两种感光起始剂的敏感波长彼此不同。
  3. 根据权利要求2所述的感光组合物，其中，所述至少两种感光起始剂的所述敏感波长处于紫外范围。
  4. 根据权利要求1所述的感光组合物，其中，所述至少两种色阻前体包括单体材料。
  5. 根据权利要求4所述的感光组合物，其中，所述至少两种色阻前体包括第一、第二和第三色阻前体，所述至少两种感光起始剂包括对应于所述第一色阻前体的第一感光起始剂、对应于所述第二色阻前体的第二感光起始剂和对应于所述第三色阻前体的第三感光起始剂。
  6. 根据权利要求5所述的感光组合物，其中，所述第一色阻前体通过第一基础单体材料与第一颜料结合而形成，所述第一基础单体材料包括CH 2＝CHCOOR 1，R 1为用于结合所述第一颜料的分子的第一基团，所述第二色阻前体通过第二基础单体材料与第二颜料结合而形成，所述第二基础单体材料包括CR’R 2＝C(CN) 2，R 2为用于结合所述第二颜料的分子的第二基团，所述第三色阻前体通过第三基础单体材料与第三颜料结合而形成，所述第三基础单体材料包括CR’R 3＝CH 2，R 3为用于结合所述第三颜料的分子的第三基团，其中，R’为苯基，
    其中，所述第一感光起始剂包括硫杂蒽酮类分子，所述第二感光起始剂包括三芳基硫鎓盐，所述第三感光起始剂包括二芳基碘鎓盐。
  7. 根据权利要求6所述的感光组合物，其中，所述第一感光起始剂包 括异丙基硫杂蒽酮，所述第二感光起始剂包括Ar 3SKCl，所述第三感光起始剂包括Ar 2IBF 6或Ar 2ISbF 6，其中，Ar为芳基。
  8. 根据权利要求7所述的感光组合物，其中，所述第一基团为MgBr，所述第一颜料包括颜料R254；所述第二基团为R”OZn，所述第二颜料包括颜料G58；所述第三基团为R”OCu，所述第三颜料包括颜料B15:6，其中，R”为烷基。
  9. 一种制备彩膜基板的方法，包括：
    提供基板；
    在所述基板上施加用于形成色阻的感光组合物，其中，所述感光组合物包括至少两种色阻前体以及至少两种感光起始剂，其中，所述至少两种感光起始剂中的每一种用于引发所述至少两种色阻前体中的对应一种色阻前体的聚合反应以形成所述色阻；以及
    图案化所述感光组合物以形成具有不同颜色的至少两种色阻。
  10. 根据权利要求9所述的方法，其中，所述至少两种感光起始剂的敏感波长彼此不同。
  11. 根据权利要求10所述的方法，其中，所述至少两种感光起始剂的所述敏感波长处于紫外范围。
  12. 根据权利要求10所述的方法，其中，所述图案化包括：
    提供具有不同图案配置的至少两个掩模板；
    通过所述至少两个掩模板中的每一个分别使用不同波长的光曝光所述感光组合物，其中，每次曝光使用的光的波长彼此不同；以及
    显影所述感光组合物以形成所述至少两种色阻。
  13. 根据权利要求10所述的方法，其中，所述图案化包括：
    提供一个掩模板；
    通过所述掩模板曝光所述感光组合物N次，其中N等于所述至少两种感光起始剂的数量，其中，每次曝光使用的光的波长彼此不同，以及在两次曝光之间以给定的步长沿给定的方向移动所述掩模板；以及
    显影所述感光组合物以形成所述至少两种色阻。
  14. 根据权利要求9所述的方法，其中，所述至少两种色阻前体包括单体材料。
  15. 根据权利要求14所述的方法，其中，所述至少两种色阻前体包括第一、第二和第三色阻前体，所述至少两种感光起始剂包括对应于所述第一色阻前体的第一感光起始剂、对应于所述第二色阻前体的第二感光起始剂和对应于所述第三色阻前体的第三感光起始剂。
  16. 根据权利要求15所述的方法，其中，所述第一色阻前体通过第一基础单体材料与第一颜料结合而形成，所述第一基础单体材料包括CH 2＝CHCOOR 1，R 1为用于结合所述第一颜料的分子的第一基团，所述第二色阻前体通过第二基础单体材料与第二颜料结合而形成，所述第二基础单体材料包括CR’R 2＝C(CN) 2，R 2为用于结合所述第二颜料的分子的第二基团，所述第三色阻前体通过第三基础单体材料与第三颜料结合而形成，所述第三基础单体材料包括CR’R 3＝CH 2，R 3为用于结合所述第三颜料的分子的第三基团，其中，R’为苯基，
    其中，所述第一感光起始剂包括硫杂蒽酮类，所述第二感光起始剂包括三芳基硫鎓盐，所述第三感光起始剂包括二芳基碘鎓盐。
  17. 根据权利要求16所述的方法，其中，所述第一基团为MgBr，所述第一颜料包括颜料R254；所述第二基团为R”OZn，所述第二颜料包括颜料G58；所述第三基团为R”OCu，所述第三颜料包括颜料B15:6，其中，R”为烷基。
  18. 根据权利要求9所述的方法，在施加所述感光组合物之前，还包括：在所述基板的待施加所述感光组合物的一侧的相对侧上形成ITO层；以及
    在所述基板的所述一侧上形成图案化的黑矩阵。
  19. 根据权利要求18所述的方法，在形成所述至少两种色阻之后，还包括：在所形成的结构的顶表面上形成平坦层；以及
    在所述平坦层上形成支撑柱。
  20. 一种彩膜基板，其中，所述彩膜基板通过根据权利要求9至19中任一项所述的制备彩膜基板的方法制备。
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