WO2019109623A1 - Mosfet数字量输出电路 - Google Patents

Mosfet数字量输出电路 Download PDF

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Publication number
WO2019109623A1
WO2019109623A1 PCT/CN2018/091989 CN2018091989W WO2019109623A1 WO 2019109623 A1 WO2019109623 A1 WO 2019109623A1 CN 2018091989 W CN2018091989 W CN 2018091989W WO 2019109623 A1 WO2019109623 A1 WO 2019109623A1
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Prior art keywords
mosfet
circuit
resistor
digital output
main controller
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PCT/CN2018/091989
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English (en)
French (fr)
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郑光磊
隋德磊
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中车大连电力牵引研发中心有限公司
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Publication of WO2019109623A1 publication Critical patent/WO2019109623A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018557—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET

Definitions

  • the present invention relates to digital output circuit technology, and more particularly to a metal oxide semiconductor field effect transistor (MOSFET) digital output circuit.
  • MOSFET metal oxide semiconductor field effect transistor
  • the digital output circuit can convert the weak digital signal output from the computer into a digital drive signal that can control the production process, and is widely used in industrial design.
  • the digital output circuit can be configured as a switch drive circuit by using different power amplifier components as switching elements depending on the load, such as indicators, relays, contactors, electrodes, and valves.
  • digital output circuits generally use relays or MOSFETs as switching elements. Among them, the driving power of the relay is relatively small. In high power applications, MOSFETs are often used as switching elements.
  • a digital output circuit using a MOSFET as a switching element cannot determine whether the digital output operates normally, and thus cannot perform real-time protection on the digital output state.
  • the present invention provides a MOSFET digital output circuit for real-time monitoring and protection of digital output states.
  • an embodiment of the present invention provides a MOSFET digital output circuit, including: a metal oxide semiconductor field effect transistor MOSFET and a monitoring circuit;
  • the MOSFET is respectively connected to the main controller and the load, and the MOSFET is used for controlling the on and off of the load according to the digital output signal output by the main controller;
  • the monitoring circuit is respectively connected with the MOSFET and the main controller, and the monitoring circuit is used for monitoring the on/off signal of the MOSFET, and feeding back the digital output state feedback signal to the main controller according to the on/off signal of the MOSFET.
  • the monitoring circuit can monitor the on/off signal of the MOSFET, and feed back the digital output state feedback signal to the main controller according to the on/off signal of the MOSFET, so that the main controller can pass the monitoring circuit.
  • Real-time monitoring of the output state of the MOSFET is realized, which enables real-time monitoring and protection of the digital output state.
  • the MOSFET digital output circuit further includes: a first optocoupler isolation circuit, the input end of the first optocoupler isolation circuit is connected to the monitoring circuit, and the output of the first optocoupler isolation circuit The terminal is connected to the main controller.
  • the electromagnetic interference existing when the digital output state feedback signal is transmitted between the main controller and the MOSFET digital output circuit can be isolated, and the anti-interference of the circuit can be improved.
  • the MOSFET digital output circuit further includes: a second optocoupler isolation circuit, the input end of the second optocoupler isolation circuit is connected to the main controller, and the second optocoupler isolation circuit is The output is connected to the MOSFET.
  • the electromagnetic interference existing when the digital output signal is transmitted between the main controller and the MOSFET digital output circuit can be isolated, and the anti-interference of the circuit can be improved.
  • the MOSFET digital output circuit further includes: a driving circuit, wherein an input end of the driving circuit is connected to an output end of the second optocoupler isolation circuit, and an output end of the driving circuit is connected to the MOSFET.
  • the MOSFET By connecting the driver circuit between the second optocoupler isolation circuit and the MOSFET, the MOSFET can be driven better.
  • the first optocoupler isolation circuit and the second optocoupler isolation circuit are integrated in a bidirectional input optocoupler.
  • the number of components in the circuit can be reduced, and the circuit complexity can be reduced.
  • the monitoring circuit includes: a first capacitor, a first resistor, and a second resistor, wherein one end of the first capacitor is respectively connected to the positive input end of the first optocoupler isolation circuit and the first resistor One end of the first resistor is connected to the negative input terminal of the first optocoupler isolation circuit and the drain of the MOSFET; one end of the second resistor is connected to the other end of the first capacitor, and the other end of the second resistor is connected to the MOSFET.
  • the source connection is connected; the positive output end of the first optocoupler isolation circuit is connected to the main controller, and the negative output end of the first optocoupler isolation circuit is grounded.
  • the monitoring circuit is realized by the first capacitor, the first resistor and the second resistor, and the on-off detection of the MOSFET can be realized, and the circuit structure is simple.
  • the monitoring circuit further includes a first bidirectional trigger diode, and the second resistor is connected to the source of the MOSFET through the first bidirectional trigger diode.
  • the driving circuit includes: a third resistor and a fourth resistor, one end of the third resistor is connected to the second optocoupler isolation circuit, and the other end of the third resistor is respectively connected to the fourth resistor One end is connected to the gate of the IGBT, and the other end of the fourth resistor is connected to the drain of the MOSFET.
  • the driving circuit realized by the third resistor and the fourth resistor can drive the MOSFET, and the circuit structure is simple.
  • a second bidirectional trigger diode and a second capacitor are connected in parallel at both ends of the fourth resistor.
  • Capacitor can play a filtering role to further improve the anti-interference of the circuit.
  • the MOSFET is an N-channel MOSFET, the source of the MOSFET is connected to the negative pole of the power supply, the drain of the MOSFET is connected to one end of the load, and the other end of the load is connected to the positive pole of the power supply;
  • the positive output end of the isolation circuit is connected to the positive pole of the power supply, the negative output end of the second optocoupler isolation circuit is connected to the third resistor, the positive input end of the second optocoupler isolation circuit is connected to the main controller, and the negative input end of the second optocoupler isolation circuit Ground.
  • FIG. 1 is a schematic structural diagram of a digital output circuit of a MOSFET according to an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of another MOSFET digital output circuit according to an embodiment of the present invention.
  • FIG. 3 is a schematic circuit diagram of a MOSFET digital output circuit according to an embodiment of the present invention.
  • the digital output circuit using MOSFET as the switching element has no output state feedback detection circuit, so it is impossible to determine whether the MOSFET is normally turned on or off, and thus it is impossible to judge whether the digital output is working normally, and thus the digital output state cannot be protected in real time. .
  • an embodiment of the present invention provides a MOSFET digital output circuit, which mainly monitors the output state of the MOSFET by adding a monitoring circuit in the digital output circuit of the MOSFET to determine whether the MOSFET is normally turned on or off. The quantity output status is monitored and protected in real time.
  • FIG. 1 is a schematic structural diagram of a digital output circuit of a MOSFET according to an embodiment of the present invention.
  • the digital output circuit of the MOSFET provided by the embodiment includes: a MOSFET 10 and a monitoring circuit 20; and the MOSFET 10 and the main controller respectively 30 is connected to the load 40, and the MOSFET 10 is used to control the on and off of the load 40 according to the digital output signal output from the main controller 30; the monitoring circuit 20 is connected to the MOSFET 10 and the main controller 30, respectively, and the monitoring circuit 20 is used to monitor the on and off of the MOSFET 10.
  • the signal is fed back to the main controller 30 based on the on/off signal of the MOSFET 10 to output a digital output status feedback signal.
  • the digital output signal output by the main controller 30 includes an open signal and an off signal, and the MOSFET 10 can turn on the load 40 according to the turn-on signal, and turn off the load 40 according to the turn-off signal.
  • the turn-on signal may be, for example, a high level signal
  • the turn-off signal may be, for example, a low level signal.
  • MOSFET 10 can be an N-channel MOSFET or a P-channel MOSFET.
  • the on-off signal of the MOSFET 10 includes an on-signal generated when the MOSFET 10 is turned on and a turn-off signal generated when the MOSFET 10 is turned off.
  • the monitoring circuit 20 can feed back a digital output state feedback signal to the main controller 30 when monitoring the turn-on signal of the MOSFET 10; when monitoring the turn-off signal of the MOSFET 10, it can also feed back a digital output state to the main controller 30.
  • the feedback signal; when the on/off signal of the MOSFET 10 is not detected, the digital output state feedback signal may not be fed back to the main controller 30.
  • the digital output state feedback signals fed back by the monitoring circuit 20 may be the same or different.
  • the main controller 30 can determine whether the MOSFET 10 is normally turned on or off according to whether the digital output state feedback signal fed back by the monitoring circuit 20 is received, thereby determining whether the digital output is working normally.
  • the main controller 30 receives the digital output state feedback signal fed back by the monitoring circuit 20, indicating that the monitoring circuit 20 monitors the on signal of the MOSFET 10, and the main controller 30 determines that the MOSFET 10 is normally turned on.
  • the digital output output is normally operated; if the digital output status feedback signal fed back by the monitoring circuit 20 is not received, it indicates that the monitoring circuit 20 does not monitor the ON signal of the MOSFET 10, and the main controller 30 determines that the MOSFET 10 is turned on abnormally, and accordingly determines the number.
  • the quantity output operation is abnormal.
  • the main controller 30 can perform an abnormal protection measure, for example, cutting off the power supply, outputting an alarm signal, and the like.
  • the main controller 30 outputs the shutdown signal, if the digital output status feedback signal fed back by the monitoring circuit 20 is received, it is determined that the digital output is working normally; if the digital output status feedback signal fed back by the monitoring circuit 20 is not received , to determine the digital output is working abnormally.
  • the main controller 30 is a main control part of the circuit where the MOSFET digital output circuit is located, and may be a processing device such as a single chip microcomputer, a central processing unit or a microcomputer.
  • the digital output circuit of the MOSFET provided by the embodiment, the monitoring circuit is connected between the MOSFET and the main controller, the monitoring circuit can monitor the on/off signal of the MOSFET, and feed back the digital output state feedback signal to the main controller according to the on/off signal of the MOSFET. Therefore, the main controller can realize real-time monitoring of the output state of the MOSFET through the monitoring circuit, thereby realizing real-time monitoring and protection of the digital output state.
  • FIG. 2 is a schematic structural diagram of another MOSFET digital output circuit according to an embodiment of the present invention. This embodiment is a further optimization and supplement to the embodiment shown in FIG. 1 .
  • the digital output circuit of the MOSFET provided by this embodiment further includes: a first optocoupler isolation circuit 50, the input end of the first optocoupler isolation circuit 50 is connected to the monitoring circuit 20, and the output end of the first optocoupler isolation circuit 50 and the main control The device 30 is connected.
  • the first optocoupler isolation circuit 50 can be implemented by using a common transistor output optocoupler.
  • a common transistor output optocoupler Of course, other types of optocouplers can also be used.
  • the specific implementation form is not limited in this embodiment, as long as the optocoupler isolation function can be realized. Just fine.
  • the monitoring circuit 20 transmits signals through the first optocoupler isolation circuit 50 and the main controller 30, and can isolate the electromagnetic interference existing when the digital output state feedback signal is transmitted between the main controller 30 and the MOSFET digital output circuit, thereby improving the resistance of the circuit. Interfering.
  • the MOSFET digital output circuit may further include: a second optocoupler isolation circuit 60, the input end of the second optocoupler isolation circuit 60 is connected to the main controller 30, and the second optocoupler The output of isolation circuit 60 is coupled to MOSFET 10.
  • the second optocoupler isolation circuit 60 is similar in circuit structure and operation principle to the first optocoupler isolation circuit 50, except that the second optocoupler isolation circuit 60 is for isolating the main controller 30 and the MOSFET digital output circuit. Electromagnetic interference that exists when digital output signals are transmitted between.
  • the first optocoupler isolation circuit 50 and the second optocoupler isolation circuit 60 are integrated in a bidirectional input optocoupler.
  • the bidirectional input optocoupler can be selected from various types of bidirectional input optocoupler chips, for example, LH1529, etc., and the specific model is not limited in this embodiment.
  • the input end of the bidirectional input optocoupler is not divided into positive and negative, so the bidirectional input optocoupler can be used to facilitate the connection of the circuit.
  • the MOSFET digital output circuit may further include: a driving circuit 70, the input end of the driving circuit 70 is connected to the output end of the second optocoupler isolating circuit 60, and the output end of the driving circuit 70 Connected to the MOSFET 10.
  • the driving circuit 70 can output a driving signal to the MOSFET 10 according to the digital output signal output from the main controller 30, and drive the MOSFET 10 to be turned on or off.
  • the specific circuit structure of the driving circuit 70 can be referred to the driving circuit structure of the conventional MOSFET 10. This embodiment is not particularly limited.
  • the MOSFET digital output circuit provided in this embodiment can connect the first optocoupler isolation circuit between the monitoring circuit and the main controller, and connect the second optocoupler isolation circuit between the MOSFET and the main controller to isolate the main controller. Electromagnetic interference with the digital output circuit of the MOSFET improves the immunity of the circuit.
  • the monitoring circuit 20 includes: a first capacitor C1. a resistor R1 and a second resistor R2, one end of the first capacitor C1 is respectively connected to the positive input end of the first optocoupler isolation circuit 50 and one end of the first resistor R1, and the other end of the first resistor R1 is respectively coupled to the first optocoupler
  • the negative input terminal of the isolation circuit 50 is connected to the drain (D pole) of the MOSFET 10 (Q1); one end of the second resistor R2 is connected to the other end of the first capacitor C1, and the other end of the second resistor R2 is connected to the source of the MOSFET 10 (Q1).
  • the pole (S pole) connection; the positive output end of the first optocoupler isolation circuit 50 is connected to the main controller 30, and the negative output end of the first optocoupler isolation circuit 50 is grounded.
  • the monitoring circuit 20 further includes a first bidirectional trigger diode VR1, and the second resistor R2 is coupled to the S pole of the MOSFET 10 (Q1) through the first bidirectional trigger diode VR1.
  • the driving circuit 70 includes a third resistor R3 and a fourth resistor R4.
  • One end of the third resistor R3 is connected to the second optocoupler isolation circuit 60, and the other end of the third resistor R3 is respectively connected to one end of the fourth resistor R4 and the gate of the IGBT.
  • the pole (G pole) is connected, and the other end of the fourth resistor R4 is connected to the D pole of the MOSFET 10 (Q1).
  • a second bidirectional trigger diode VR2 and a second capacitor C2 are connected in parallel across the fourth resistor R4.
  • MOSFET10 (Q1) is N-channel MOSFET 10 (Q1), S-pole of MOSFET 10 (Q1) is connected to the negative pole of the power supply - BAT, D of MOSFET 10 (Q1) is connected to one end of load 40 (Load), and load 40 (Load) is another.
  • One end is connected to the positive pole of the power supply +BAT;
  • the positive output end of the second optocoupler isolation circuit 60 is connected to the positive pole of the power supply +BAT,
  • the negative output end of the second optocoupler isolation circuit 60 is connected to the third resistor R3, and the positive of the second optocoupler isolation circuit 60
  • the input terminal is connected to the main controller 30, and the negative input terminal of the second optocoupler isolation circuit 60 is grounded.
  • the first optocoupler isolation circuit 50 and the second optocoupler isolation circuit 60 are specifically implemented by an integrated chip bidirectional input optocoupler D1 (LH1529), and the input end of the first optocoupler isolation circuit 50 is a bidirectional input optocoupler D1 5 6 terminals, the positive output terminal is the 3 terminal of the bidirectional input optocoupler D1, the negative output terminal is the 4 terminal of the bidirectional input optocoupler D1; the input end of the second optocoupler isolation circuit 60 is the bidirectional input optocoupler D1 At the 2nd end, the positive output terminal is the 8 terminal of the bidirectional input photocoupler D1, and the negative output terminal is the 7 terminal of the bidirectional input photocoupler D1.
  • the voltage between the positive pole of the power supply + BAT and the negative pole of the power supply - BAT is supplied to the first capacitor through the load 40 (Load), the first resistor R1, the second resistor R2, and the first bidirectional trigger diode VR1. C1 is charged.
  • the circuit is just powered up, the charging current is very small, the voltage between the 5th and 6th ends of the bidirectional input optocoupler D1 is very low, and the 5th and 6th ends of the bidirectional input optocoupler D1 are not turned on.
  • the digital output signal DO output by the main controller 30 is an open signal (high level signal)
  • the 7-terminal and the 8-terminal of the bidirectional input photocoupler D1 are turned on, and the voltage between the positive power source + BAT and the negative power supply - BAT is passed.
  • the third resistor R3 and the fourth resistor R4 are divided, the G-pole voltage of the MOSFET 10 (Q1) is higher than the S-pole voltage, so that the MOSFET 10 (Q1) is turned on.
  • the first capacitor C1, the 6-terminal and the 5-terminal of the bidirectional input photocoupler D1, the D and S poles of the MOSFET 10 (Q1), the first bidirectional trigger diode VR1 and the second resistor R2 form a loop, and the first capacitor C1 passes the bidirectional input light. 6 and 5 terminals of D1, D and S of MOSFET 10 (Q1), first bidirectional trigger diode VR1 and second resistor R2 are discharged, and 6 and 5 terminals of bidirectional input optocoupler D1 are turned on, main control
  • the device 30 receives the digital output state feedback signal LO and determines that the MOSFET 10 (Q1) is turned on.
  • the pulse width of the digital output state feedback signal LO is positively correlated with the discharge time of the first capacitor C1. When the discharge of the first capacitor C1 is completed, the 5th and 6th ends of the bidirectional input photocoupler D1 are disconnected.
  • the MOSFET 10 (Q1) If the MOSFET 10 (Q1) is abnormal and not turned on after the main controller 30 outputs the turn-on signal, the 6-terminal and the 5-terminal of the bidirectional input photocoupler D1 remain in the off state, and the main controller 30 receives less than the digital amount.
  • the state feedback signal LO is output, thereby determining that the MOSFET 10 (Q1) is turned on abnormally.
  • the digital output signal DO output by the main controller 30 is a shutdown signal (low level signal)
  • the 7-terminal and the 8-terminal of the bidirectional input photocoupler D1 are not turned on, and the G-pole voltage and the S-pole voltage of the MOSFET 10 (Q1) are not turned on. Both are 0 and MOSFET10 (Q1) is turned off.
  • the voltage between the positive pole +BAT of the power supply and the negative pole of the power supply-BAT charges the first capacitor C1 through the load 40 (Load), the second resistor R2, the first bidirectional trigger diode VR1, and the 5th and 6th ends of the bidirectional input photocoupler D1.
  • the 5th and 6th ends of the bidirectional input photocoupler D1 are turned on, and the main controller 30 receives the digital output state feedback signal LO, and determines that the MOSFET 10 (Q1) is turned off.
  • the pulse width of the digital output state feedback signal LO is positively correlated with the charging time of the first capacitor C1.
  • the state feedback signal LO is outputted to determine that the MOSFET 10 (Q1) is turned off abnormally.
  • the first resistor R1 and the second resistor R2 can play a current limiting function, and the first bidirectional trigger diode VR1 can stabilize the voltage of the monitoring circuit 20 and improve the stability of the circuit; the third resistor R3 and the fourth resistor R4 For the voltage dividing resistor, the voltage is divided; the second bidirectional trigger diode VR2 can stabilize the voltage between the G and S poles of the MOSFET 10 (Q1) to improve the stability of the circuit; the second capacitor C2 can Filtering to improve the anti-interference of the circuit.
  • first bidirectional trigger diode VR1 and the second bidirectional trigger diode VR2 may also be replaced by a Zener diode.
  • This embodiment is not particularly limited as long as the voltage stabilization function can be achieved.
  • the above circuit is exemplified by taking the MOSFET 10 (Q1) as an N-channel MOSFET as an example, and the MOSFET 10 (Q1) may also be a P-channel MOSFET, and the connection relationship between the components is only required. Change it.
  • circuit structure is only an example, and other devices for improving the performance of the circuit may be included in the circuit, which is not specifically limited in this embodiment.
  • the digital output circuit of the MOSFET provided in this embodiment can realize real-time monitoring of the output state of the MOSFET through the monitoring circuit, thereby realizing real-time monitoring and protection of the digital output state, and the circuit structure is simple.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” or “second” may include at least one of the features, either explicitly or implicitly.
  • connection should be understood broadly, and may be, for example, a mechanical connection or an electrical connection, either directly or through a connection, unless otherwise explicitly defined and defined.
  • the intermediate medium is indirectly connected, and may be an internal connection of two elements or an interaction relationship of two elements. Unless otherwise explicitly defined, those skilled in the art can understand the above terms in the present invention according to specific circumstances. The specific meaning.

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Abstract

本发明提供一种MOSFET数字量输出电路，包括：MOSFET和监测电路；MOSFET分别与主控制器和负载连接，MOSFET用于根据主控制器输出的数字量输出信号控制负载的通断；监测电路分别与MOSFET和主控制器连接，监测电路用于监测MOSFET的通断信号，并根据MOSFET的通断信号向主控制器反馈数字量输出状态反馈信号。本发明提供的技术方案可以通过监测电路实现对MOSFET的输出状态的实时监测，进而可以实现对数字量输出状态的实时监测和保护。

Description

MOSFET数字量输出电路 技术领域
本发明涉及数字量输出电路技术，尤其涉及一种金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor，MOSFET)数字量输出电路。
背景技术
数字量输出电路可以将计算机输出的微弱数字信号转换成能对生产过程进行控制的数字驱动信号，其被广泛的应用于工业设计中。
数字量输出电路根据负载的不同，例如：指示灯、继电器、接触器、电极和阀门等负载，可以选用不同的功率放大器件作为开关元件构成开关驱动电路。目前，数字量输出电路一般采用继电器或者MOSFET作为开关元件，其中，继电器的驱动功率比较小，在大功率场合，常采用MOSFET作为开关元件。
然而，目前采用MOSFET作为开关元件的数字量输出电路，无法判断数字量输出是否正常工作，因而不能对数字量输出状态进行实时保护。
发明内容
有鉴于此，本发明提供一种MOSFET数字量输出电路，用于实现对数字量输出状态的实时监测和保护。
为了实现上述目的，本发明实施例提供一种MOSFET数字量输出电路，包括：金属氧化物半导体场效应晶体管MOSFET和监测电路；
MOSFET分别与主控制器和负载连接，MOSFET用于根据主控制器输出的数字量输出信号控制负载的通断；
监测电路分别与MOSFET和主控制器连接，监测电路用于监测MOSFET的通断信号，并根据MOSFET的通断信号向主控制器反馈数字量输出状态反馈信号。
通过在MOSFET和主控制器之间连接监测电路，监测电路可以监测MOSFET的通断信号，并根据MOSFET的通断信号向主控制器反馈数字量输出状态反馈信号，从而主控制器可以通过监测电路实现对MOSFET的输出状态的实时监测，进而可以实现对数字量输出状态的实时监测和保护。
作为本发明实施例一种可选的实施方式，MOSFET数字量输出电路还包括：第一光耦隔离电路，第一光耦隔离电路的输入端与监测电路连接，第一光耦隔离电路的输出端与主控制器连接。
通过在监测电路与主控制器之间连接第一光耦隔离电路，可以隔离主控制器与MOSFET数字量输出电路之间传输数字量输出状态反馈信号时存在的电磁干扰，提高电路的抗干扰性。
作为本发明实施例一种可选的实施方式，MOSFET数字量输出电路还包括：第二光耦隔离电路，第二光耦隔离电路的输入端与主控制器连接，第二光耦隔离电路的输出端与MOSFET连接。
通过在MOSFET与主控制器之间连接第二光耦隔离电路，可以隔离主控制器与MOSFET数字量输出电路之间传输数字量输出信号时存在的电磁干扰，提高电路的抗干扰性。
作为本发明实施例一种可选的实施方式，MOSFET数字量输出电路还包括：驱动电路，驱动电路的输入端与第二光耦隔离电路的输出端连接，驱动电路的输出端与MOSFET连接。
通过在第二光耦隔离电路与MOSFET之间连接驱动电路，可以更好的驱动MOSFET。
作为本发明实施例一种可选的实施方式，第一光耦隔离电路和第二光耦隔离电路集成在一个双向输入光耦中。
通过将第一光耦隔离电路和第二光耦隔离电路集成在一个双向输入光耦中，可以减少电路中的元器件数量，降低电路复杂度。
作为本发明实施例一种可选的实施方式，监测电路包括：第一电容、第一电阻和第二电阻，第一电容的一端分别与第一光耦隔离电路的正输入端和第一电阻的一端连接，第一电阻的另一端分别与第一光耦隔离电路的负输入端和MOSFET的漏极连接；第二电阻的一端连接第一电容的另一端，第二电阻的另一端与MOSFET的源极连接；第一光耦隔离电路的正输出端连接主控制器，第一光耦隔离电路的负输出端接地。
通过第一电容、第一电阻和第二电阻实现监测电路，可以实现对MOSFET的通断检测，而且电路结构简单。
作为本发明实施例一种可选的实施方式，监测电路还包括第一双向触发二极管，第二电阻通过第一双向触发二极管与MOSFET的源极连接。
通过在第二电阻与MOSFET的源极之间连接第一双向触发二极管，可以起到稳定监测电路电压的作用，提高电路的稳定性。
作为本发明实施例一种可选的实施方式，驱动电路包括：第三电阻和第四电阻，第三电阻的一端与第二光耦隔离电路连接，第三电阻的另一端分别与第四电阻的一端和IGBT的栅极连接，第四电阻的另一端与MOSFET的漏极连接。
通过第三电阻和第四电阻实现的驱动电路，可以实现对MOSFET的驱动，而且电路结构简单。
作为本发明实施例一种可选的实施方式，第四电阻的两端并联有第二双向触发二极管和第二电容。
通过在第四电阻的两端并联第二双向触发二极管，可以起到稳定MOSFET的G极和S极之间的电压的作用，提高电路的稳定性；通过在第四电阻的两端并联第二电容，可以起到滤波作用，进一步提高电路的抗干扰性。
作为本发明实施例一种可选的实施方式，MOSFET为N沟道MOSFET，MOSFET的源极连接电源负极，MOSFET的漏极与负载的一端连接，负载的另一端连接电源正极； 第二光耦隔离电路的正输出端连接电源正极，第二光耦隔离电路的负输出端连接第三电阻，第二光耦隔离电路的正输入端连接主控制器，第二光耦隔离电路的负输入端接地。
附图说明
图1为本发明实施例提供的一种MOSFET数字量输出电路的结构示意图；
图2为本发明实施例提供的另一种MOSFET数字量输出电路的结构示意图；
图3为本发明实施例提供的一种MOSFET数字量输出电路的电路原理图。
附图标记说明：
10-MOSFET；
20-监测电路；
30-主控制器；
40-负载；
50-第一光耦隔离电路；
60-第二光耦隔离电路；
70-驱动电路。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
目前采用MOSFET作为开关元件的数字量输出电路，没有输出状态反馈检测电路，因此无法判定MOSFET是否正常开通或关断，进而无法判断数字量输出是否正常工作，因而不能对数字量输出状态进行实时保护。
针对上述技术问题，本发明实施例提供一种MOSFET数字量输出电路，主要通过在MOSFET数字量输出电路中增加监测电路，来实时监测MOSFET的输出状态，判定MOSFET是否正常开通或关断，对数字量输出状态进行实时监测和保护。
下面结合附图，对本发明的技术方案进行详细描述。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。
图1为本发明实施例提供的一种MOSFET数字量输出电路的结构示意图，如图1所示，本实施例提供的MOSFET数字量输出电路包括：MOSFET10和监测电路20；MOSFET10分别与主控制器30和负载40连接，MOSFET10用于根据主控制器30输出的数字量输出信号控制负载40的通断；监测电路20分别与MOSFET10和主控制器30连接，监测电路20用于监测MOSFET10的通断信号，并根据MOSFET10的通断信号向主控制器30反馈数字量输出状态反馈信号。
具体的，主控制器30输出的数字量输出信号包括开通信号和关断信号， MOSFET10可以根据开通信号导通而接通负载40，根据关断信号关断而切断负载40。其中，开通信号例如可以是高电平信号，关断信号例如可以是低电平信号。
MOSFET10可以是N沟道MOSFET，也可以是P沟道MOSFET。
MOSFET10的通断信号包括MOSFET10导通时产生的导通信号和MOSFET10关断时产生的关断信号。
监测电路20在监测到MOSFET10的导通信号时可以向主控制器30反馈一数字量输出状态反馈信号；在监测到MOSFET10的关断信号时，也可以向主控制器30反馈一数字量输出状态反馈信号；在未检测到MOSFET10的通断信号时，可以不向主控制器30反馈数字量输出状态反馈信号。
其中，监测电路20两次反馈的数字量输出状态反馈信号可以相同，也可以不同。
主控制器30在输出数字量输出信号后，根据是否接收到监测电路20反馈的数字量输出状态反馈信号，就可以判定MOSFET10是否正常开通或关断，进而判断数字量输出是否正常工作。
例如：主控制器30在输出导通信号后，若接收到监测电路20反馈的数字量输出状态反馈信号，说明监测电路20监测到MOSFET10的导通信号，主控制器30判定MOSFET10正常开通，依此判断数字量输出正常工作；若未接收到监测电路20反馈的数字量输出状态反馈信号，说明监测电路20未监测到MOSFET10的导通信号，主控制器30判定MOSFET10开通异常，依此判断数字量输出工作异常，此时，主控制器30可以执行异常保护措施，例如：切断电源、输出报警信号等。
类似的，主控制器30输出关断信号后，若接收到监测电路20反馈的数字量输出状态反馈信号，判断数字量输出正常工作；若未接收到监测电路20反馈的数字量输出状态反馈信号，判断数字量输出工作异常。
其中，主控制器30为MOSFET数字量输出电路所在电路的主控部分，可以是单片机、中央处理器或微机等具有处理能力的器件。
本实施例提供的MOSFET数字量输出电路，MOSFET和主控制器之间连接监测电路，监测电路可以监测MOSFET的通断信号，并根据MOSFET的通断信号向主控制器反馈数字量输出状态反馈信号，从而主控制器可以通过监测电路实现对MOSFET的输出状态的实时监测，进而可以实现对数字量输出状态的实时监测和保护。
图2为本发明实施例提供的另一种MOSFET数字量输出电路的结构示意图，本实施例是对上述图1所示实施例的进一步优化补充。本实施例提供的MOSFET数字量输出电路还包括：第一光耦隔离电路50，第一光耦隔离电路50的输入端与监测电路20连接，第一光耦隔离电路50的输出端与主控制器30连接。
具体的，第一光耦隔离电路50可以采用常用的晶体管输出光耦实现，当然，也可以采用其他类型的光耦实现，具体实现形式本实施例不做特别限定，只要能够实现光耦隔离作用即可。
监测电路20通过第一光耦隔离电路50与主控制器30传输信号，可以隔离主控制器30与MOSFET数字量输出电路之间传输数字量输出状态反馈信号时存在的电磁干 扰，提高电路的抗干扰性。
同样的，为了进一步提高电路的抗干扰性，MOSFET数字量输出电路还可以包括：第二光耦隔离电路60，第二光耦隔离电路60的输入端与主控制器30连接，第二光耦隔离电路60的输出端与MOSFET10连接。
其中，第二光耦隔离电路60与第一光耦隔离电路50的电路结构和工作原理类似，不同之处在于，第二光耦隔离电路60是为了隔离主控制器30与MOSFET数字量输出电路之间传输数字量输出信号时存在的电磁干扰。
为了减少电路中的元器件数量，降低电路复杂度，本实施例中，第一光耦隔离电路50和第二光耦隔离电路60集成在一个双向输入光耦中。
其中，双向输入光耦可以选用各种类型的双向输入光耦芯片，例如：LH1529等，其具体型号本实施例不做特别限定。
另外，双向输入光耦的输入端不分正负，因而采用双向输入光耦可以方便电路的连接。
本实施例中，为了更好的驱动MOSFET10，MOSFET数字量输出电路还可以包括：驱动电路70，驱动电路70的输入端与第二光耦隔离电路60的输出端连接，驱动电路70的输出端与MOSFET10连接。
具体的，驱动电路70根据主控制器30输出的数字量输出信号可以向MOSFET10输出驱动信号，驱动MOSFET10导通或关断。
驱动电路70的具体电路结构可以参见现有的MOSFET10的驱动电路结构，本实施例对此不做特别限定。
本实施例提供的MOSFET数字量输出电路，通过在监测电路与主控制器之间连接第一光耦隔离电路，在MOSFET与主控制器之间连接第二光耦隔离电路，可以隔离主控制器与MOSFET数字量输出电路之间的电磁干扰，提高电路的抗干扰性。
图3为本发明实施例提供的一种MOSFET数字量输出电路的电路原理图，如图3所示，本实施例提供的MOSFET数字量输出电路中，监测电路20包括：第一电容C1、第一电阻R1和第二电阻R2，第一电容C1的一端分别与第一光耦隔离电路50的正输入端和第一电阻R1的一端连接，第一电阻R1的另一端分别与第一光耦隔离电路50的负输入端和MOSFET10(Q1)的漏极(D极)连接；第二电阻R2的一端连接第一电容C1的另一端，第二电阻R2的另一端与MOSFET10(Q1)的源极(S极)连接；第一光耦隔离电路50的正输出端连接主控制器30，第一光耦隔离电路50的负输出端接地。
监测电路20还包括第一双向触发二极管VR1，第二电阻R2通过第一双向触发二极管VR1与MOSFET10(Q1)的S极连接。
驱动电路70包括：第三电阻R3和第四电阻R4，第三电阻R3的一端与第二光耦隔离电路60连接，第三电阻R3的另一端分别与第四电阻R4的一端和IGBT的栅极(G极)连接，第四电阻R4的另一端与MOSFET10(Q1)的D极连接。
第四电阻R4的两端并联有第二双向触发二极管VR2和第二电容C2。
MOSFET10(Q1)为N沟道MOSFET10(Q1)，MOSFET10(Q1)的S极连接电源负极 -BAT，MOSFET10(Q1)的D极与负载40(Load)的一端连接，负载40(Load)的另一端连接电源正极+BAT；第二光耦隔离电路60的正输出端连接电源正极+BAT，第二光耦隔离电路60的负输出端连接第三电阻R3，第二光耦隔离电路60的正输入端连接主控制器30，第二光耦隔离电路60的负输入端接地。
其中，第一光耦隔离电路50和第二光耦隔离电路60具体采用集成芯片双向输入光耦D1(LH1529)实现，第一光耦隔离电路50的输入端即为双向输入光耦D1的5、6端，正输出端为双向输入光耦D1的3端，负输出端为双向输入光耦D1的4端；第二光耦隔离电路60的输入端即为双向输入光耦D1的1、2端，正输出端为双向输入光耦D1的8端，负输出端为双向输入光耦D1的7端。
具体的，当整个电路上电时，电源正极+BAT与电源负极-BAT之间的电压通过负载40(Load)、第一电阻R1、第二电阻R2和第一双向触发二极管VR1给第一电容C1充电，此时，电路刚上电，充电电流很小，双向输入光耦D1的5端和6端之间的电压很低，双向输入光耦D1的5端和6端不导通。
当主控制器30输出的数字量输出信号DO为开通信号(高电平信号)时，双向输入光耦D1的7端和8端导通，电源正极+BAT和电源负极-BAT之间的电压通过第三电阻R3和第四电阻R4分压后，MOSFET10(Q1)的G极电压高于S极电压，使得MOSFET10(Q1)导通。第一电容C1、双向输入光耦D1的6端和5端、MOSFET10(Q1)的D极和S极、第一双向触发二极管VR1和第二电阻R2形成回路，第一电容C1通过双向输入光耦D1的6端和5端、MOSFET10(Q1)的D极和S极、第一双向触发二极管VR1和第二电阻R2进行放电，双向输入光耦D1的6端和5端导通，主控制器30接收到数字量输出状态反馈信号LO，判定MOSFET10(Q1)导通。其中，数字量输出状态反馈信号LO的脉冲宽度与第一电容C1的放电时间正相关，当第一电容C1放电完成后，双向输入光耦D1的5端和6端断开。
若主控制器30输出开通信号后，MOSFET10(Q1)发生异常而未导通，则双向输入光耦D1的6端和5端继续保持断开状态，主控制器30则接收到不到数字量输出状态反馈信号LO，从而判定MOSFET10(Q1)导通异常。
当主控制器30输出的数字量输出信号DO为关断信号(低电平信号)时，双向输入光耦D1的7端和8端不导通，MOSFET10(Q1)的G极电压和S极电压均为0，MOSFET10(Q1)关断。电源正极+BAT与电源负极-BAT之间的电压通过负载40(Load)、第二电阻R2、第一双向触发二极管VR1和双向输入光耦D1的5端和6端给第一电容C1充电，双向输入光耦D1的5端和6端导通，主控制器30接收到数字量输出状态反馈信号LO，判定MOSFET10(Q1)关断。其中，数字量输出状态反馈信号LO的脉冲宽度与第一电容C1的充电时间正相关，当第一电容C1充电完成后，双向输入光耦D1的5端和6端断开。
若主控制器30输出关断信号后，MOSFET10(Q1)发生异常而未关断，则双向输入光耦D1的6端和5端继续保持断开状态，主控制器30则接收到不到数字量输出状态反馈信号LO，从而判定MOSFET10(Q1)关断异常。
其中，第一电阻R1和第二电阻R2可以起到限流作用，第一双向触发二极管VR1可以起到稳定监测电路20电压的作用，提高电路的稳定性；第三电阻R3和第四电阻 R4为分压电阻，起分压作用；第二双向触发二极管VR2可以起到稳定MOSFET10(Q1)的G极和S极之间的电压的作用，提高电路的稳定性；第二电容C2可以起到滤波作用，提高电路的抗干扰性。
另外，第一双向触发二极管VR1和第二双向触发二极管VR2也可以采用稳压管代替，本实施例对此不做特别限定，只要能够实现稳压作用即可。
需要说明的是，上述电路是以MOSFET10(Q1)为N沟道MOSFET为例进行示例性说明，MOSFET10(Q1)也可以为P沟道MOSFET，只需将各元器件之间的连接关系稍作更改即可。
另外，需要说明的是，上述电路结构只是一种示例，电路中还可以包括其他提高电路性能的器件，本实施例对此不做特别限定。
本实施例提供的MOSFET数字量输出电路，可以通过监测电路实现对MOSFET的输出状态的实时监测，进而可以实现对数字量输出状态的实时监测和保护，而且电路结构简单。
在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。
另外，在本发明中，除非另有明确的规定和限定，术语“连接”、“相连”等应做广义理解，例如可以是机械连接，也可以是电连接；可以是直接连接，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定、对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

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  1. 一种MOSFET数字量输出电路，其特征在于，包括：金属氧化物半导体场效应晶体管MOSFET和监测电路；
    所述MOSFET分别与主控制器和负载连接，所述MOSFET用于根据所述主控制器输出的数字量输出信号控制所述负载的通断；
    所述监测电路分别与所述MOSFET和所述主控制器连接，所述监测电路用于监测所述MOSFET的通断信号，并根据所述MOSFET的通断信号向所述主控制器反馈数字量输出状态反馈信号。
  2. 根据权利要求1所述的MOSFET数字量输出电路，其特征在于，还包括：第一光耦隔离电路，所述第一光耦隔离电路的输入端与所述监测电路连接，所述第一光耦隔离电路的输出端与所述主控制器连接。
  3. 根据权利要求2所述的MOSFET数字量输出电路，其特征在于，还包括：第二光耦隔离电路，所述第二光耦隔离电路的输入端与所述主控制器连接，所述第二光耦隔离电路的输出端与所述MOSFET连接。
  4. 根据权利要求3所述的MOSFET数字量输出电路，其特征在于，还包括：驱动电路，所述驱动电路的输入端与所述第二光耦隔离电路的输出端连接，所述驱动电路的输出端与所述MOSFET连接。
  5. 根据权利要求3所述的MOSFET数字量输出电路，其特征在于，所述第一光耦隔离电路和所述第二光耦隔离电路集成在一个双向输入光耦中。
  6. 根据权利要求2所述的MOSFET数字量输出电路，其特征在于，所述监测电路包括：第一电容、第一电阻和第二电阻，所述第一电容的一端分别与所述第一光耦隔离电路的正输入端和所述第一电阻的一端连接，所述第一电阻的另一端分别与所述第一光耦隔离电路的负输入端和所述MOSFET的漏极连接；所述第二电阻的一端连接所述第一电容的另一端，所述第二电阻的另一端与所述MOSFET的源极连接；所述第一光耦隔离电路的正输出端连接所述主控制器，所述第一光耦隔离电路的负输出端接地。
  7. 根据权利要求6所述的MOSFET数字量输出电路，其特征在于，所述监测电路还包括第一双向触发二极管，所述第二电阻通过所述第一双向触发二极管与所述MOSFET的源极连接。
  8. 根据权利要求4所述的MOSFET数字量输出电路，其特征在于，所述驱动电路包括：第三电阻和第四电阻，所述第三电阻的一端与所述第二光耦隔离电路连接，所述第三电阻的另一端分别与所述第四电阻的一端和所述IGBT的栅极连接，所述第四电阻的另一端与所述MOSFET的漏极连接。
  9. 根据权利要求8所述的MOSFET数字量输出电路，其特征在于，所述第四电阻的两端并联有第二双向触发二极管和第二电容。
  10. 根据权利要求8或9所述的MOSFET数字量输出电路，其特征在于，所述MOSFET为N沟道MOSFET，所述MOSFET的源极连接电源负极，所述MOSFET的漏极与所述负载的一端连接，所述负载的另一端连接电源正极；所述第二光耦隔离电路的 正输出端连接电源正极，所述第二光耦隔离电路的负输出端连接所述第三电阻，所述第二光耦隔离电路的正输入端连接所述主控制器，所述第二光耦隔离电路的负输入端接地。
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