WO2019104791A1 - Film solar cell film removal process and film solar cell - Google Patents

Film solar cell film removal process and film solar cell Download PDF

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Publication number
WO2019104791A1
WO2019104791A1 PCT/CN2017/117926 CN2017117926W WO2019104791A1 WO 2019104791 A1 WO2019104791 A1 WO 2019104791A1 CN 2017117926 W CN2017117926 W CN 2017117926W WO 2019104791 A1 WO2019104791 A1 WO 2019104791A1
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solar cell
thin film
film solar
layer
substrate glass
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PCT/CN2017/117926
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French (fr)
Chinese (zh)
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苏育家
张学良
林健
林俊荣
施栓林
席峰
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北京铂阳顶荣光伏科技有限公司
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Publication of WO2019104791A1 publication Critical patent/WO2019104791A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of thin film solar cell processing, in particular to a thin film solar cell film removing process and a thin film solar cell.
  • Thin-film solar cells are the future trend of photovoltaic power generation, especially with the further improvement of component efficiency. Flexibility and thin film will gradually become the emerging development direction of the photovoltaic market.
  • the advantages of thin-film solar cells are: no pollution, low energy consumption, and a wide range of applications.
  • Thin film solar cell materials have obvious advantages in temperature coefficient and low-light power generation, and thin-film solar cell technology has great room for improvement and development potential.
  • the highly promising thin film solar cell technology is based on the semiconductor Cu(In,Ga)Se2, abbreviated CIGS, which has proven high efficiency and long-lasting workability.
  • a typical CIGS solar cell includes a glass substrate having a thickness of 2-3 mm, a Mo back electrode layer having a thickness of 0.5-1 ⁇ m, a CIGS layer 3 of 1.5-2 ⁇ m, a CdS buffer layer having a thickness of 50 nm, and a ZnO of 0.5-1 ⁇ m.
  • Window layer 5 An optional second buffer layer 6 can be located between the CdS buffer layer and the window layer and has a thickness of 50 nm.
  • the CIGS layer is a p-conductive Cu(In,Ga)(Se,S)2 compound.
  • the CdS buffer layer serves as a protection for the CIGS layer.
  • the window layer is an n-type conductive doped zinc oxide layer. It forms a pn-junction with the CIGS layer and serves as a transparent front contact.
  • the optional second buffer layer comprises undoped ZnO. It is statistically observed that a solar cell having such a second buffer layer exhibits better performance than a battery having a single ZnO layer.
  • edge removal In order to be able to reliably achieve electrical insulation and sealing of the solar cell module, all of the film layers in the peripheral region of the glass substrate top of the thin film solar cell module are typically completely removed in a so-called "edge removal" operation. Laser ablation, sand blasting and grinding are currently used edge removal methods. Edge removal makes it possible to obtain a seal of the glass in the outer edge region, which prevents corrosion of the film layer of the solar cell module. Electrical insulation is also necessary to prevent leakage and short circuits.
  • the edge removal operation is usually followed by contact, that is, by using, for example, a conductive paste and a copper strip, the stacking, mating, and mounting of the junction box on which the cable can be attached to perform the uppermost conductive layer (front contact) of the solar cell.
  • the so-called “wiring” can be led to the junction box, for example, through holes drilled in the substrate or through the edge of the substrate.
  • the current process generally takes three steps.
  • the first step is to remove all the layers of the edge by laser or sand blasting.
  • the film layers such as CIGS and TCO are removed by a doctor blade.
  • the Mo layer is left; in the third step, the edge of the substrate glass is ground to a rounded edge by an edger.
  • the present invention provides a thin film solar cell film removal process comprising the following steps:
  • the CIGS layer and the TCO layer located in the second outer edge region above the molybdenum layer are removed using a second film removing device.
  • the thin film solar cell film removal process further comprises:
  • the edges of the substrate glass are rounded using an edging device.
  • the first film removing device and the edging device each comprise a grinding wheel set
  • the second film removing device comprises a doctor blade set
  • the first outer edge region has a width of 12 mm and the second outer edge region has a width of 4 mm.
  • the roughness of the grinding wheel of the first film removing device is smaller than the roughness of the grinding wheel of the edge grinding device.
  • the grinding wheel has a rotational speed of 4000-6000 rpm.
  • the longitudinal direction of the second outer edge region is parallel to the long axis direction of the thin film solar cell.
  • the thin film solar cell film removal process further comprises an finishing/trimming step.
  • the present invention also provides a thin film solar cell comprising a substrate glass, a molybdenum layer disposed on the substrate glass, a CIGS layer, a TCO layer, and a second outer edge region disposed above the molybdenum layer
  • the electrode lead wire, the molybdenum layer, the CIGS layer, and the TCO layer are processed by the thin film solar cell film removing process.
  • the edge of the substrate glass is subjected to a rounded edge treatment.
  • the edge of the substrate glass is subjected to rounding treatment by an edger.
  • the edging device comprises a grinding wheel set, and the grinding wheel has a circular arc surface which can be simultaneously contacted with an edge of opposite sides of the edge of the substrate glass.
  • the thin film solar cell film removing process and the thin film solar cell provided by the invention remove the corresponding positions of the molybdenum layer, the CIGS layer and the TCO layer, so that the Mo region is leaked at the edge of the substrate glass, thereby facilitating the welding of the electrode lead wires;
  • the membrane removal process is simple and easy to operate, which makes the fabricated thin film solar cell low in cost and can improve work efficiency.
  • FIG. 1 is a schematic structural view of a thin film solar cell according to an embodiment of the present invention.
  • FIG. 2 is a view showing a state of removing a film of a thin film solar cell according to another embodiment of the present invention.
  • FIG. 3 is a view showing a edging state of a thin film solar cell according to still another embodiment of the present invention.
  • Embodiments of the present invention provide a film removal process for a thin film solar cell, including the following steps:
  • the CIGS layer 3 and the TCO layer 4 located in the second outer edge region above the molybdenum layer 2 are removed using a second film removing device.
  • the CIGS layer 3 refers to a chalcopyrite composed of four elements of Cu (copper), In (indium), Ga (gallium), and Se (selenium).
  • the crystalline thin film layer, the TCO layer 4 refers to a transparent conductive oxide film (Transparent Conductive Oxide), the first outer edge region above the substrate glass 1, specifically the peripheral edge region of the substrate glass 1 coated with the film layer side, and the molybdenum layer 2
  • the upper second outer edge region specifically refers to an upper region at the end of the molybdenum layer 2, that is, a drain Mo region for placing the electrode lead wires 7.
  • the thin film solar cell removing process and the thin film solar cell provided by the invention remove the corresponding positions of the molybdenum layer 2, the CIGS layer 3 and the TCO layer 4, so that the Mo region is leaked at both end edges of the substrate glass 1, thereby facilitating the welding electrode
  • the lead-out line 7; the film removal process of the invention is simple and convenient to operate, so that the manufactured thin film solar cell has lower cost and can improve work efficiency.
  • the first outer edge region has a width of 12 mm and the second outer edge region has a width of 4 mm.
  • the longitudinal direction of the second outer edge region is parallel to the long axis direction of the thin film solar cell.
  • the length direction of the second outer edge region and the long axis direction of the thin film solar cell refer to the longitudinal direction of the thin film solar cell, that is, the direction perpendicular to the paper surface in FIG. 1, and the second outer edge region.
  • the electrode lead wire 7 is placed.
  • the thin film solar cell film removing process further comprises: grinding the edges of the substrate glass 1 into rounded corners using an edging device 6.
  • the first film removing device 5 and the edging device 6 each include a grinding wheel set, and the first film removing device and the edging device are at the same station, and the film is removed simultaneously or sequentially. Edge grinding step.
  • the second film removing device includes a doctor blade set.
  • the roughness of the grinding wheel of the first film removing device 5 is smaller than the roughness of the grinding wheel of the edging device 6.
  • the grinding wheel has a rotational speed of 4000-6000 rpm.
  • the grinding wheel in the first film removing device 5 is used for removing the molybdenum layer, the CIGS layer and the TCO layer, and the grinding wheel in the edging device 6 is used for grinding the edge of the substrate glass 1 and the grinding wheel has an arc
  • the surface and the arc surface can be simultaneously contacted with the edges of the opposite sides of the edge of the substrate glass 1, so that the opposite edges of the substrate glass 1 can be edged at the same time, thereby greatly improving work efficiency; according to actual process requirements, it can be set
  • the roughness of the grinding wheel of the first film removing device 5 is smaller than the roughness of the grinding wheel of the edging device 6, but those skilled in the art know that the roughness and the rotating speed of the grinding wheel are not specifically limited, and are flexibly set according to actual conditions;
  • the CIGS layer 3 and the TCO layer 4 above the two ends of the molybdenum layer 2 are generally processed by a doctor blade.
  • the blade itself is a prior art method for removing the film, is convenient
  • the thin film solar cell film removal process further comprises an finishing/trimming step.
  • the finishing/trimming step may be performed, such as polishing and polishing the substrate glass 1 and each film layer.
  • Another embodiment of the present invention provides a thin film solar cell including a substrate glass 1, a molybdenum layer 2 disposed on the substrate glass 1, a CIGS layer 3, a TCO layer 4, and a layer disposed above the molybdenum layer 2.
  • the electrode lead wires of the two outer edge regions, the molybdenum layer 2, the CIGS layer 3, and the TCO layer 4 are processed by the thin film solar cell film removing process described above.
  • the edge of the substrate glass 1 is subjected to a rounded edge treatment.
  • the edge of the substrate glass 1 is subjected to rounding treatment by the edging device 6.
  • the edging device 6 comprises a grinding wheel set, and the grinding wheel has a circular arc surface which can be simultaneously contacted with the opposite side edges of the edge of the substrate glass 1.
  • the edge of the substrate glass 1 is generally angular, which is easy to cause damage and does not meet the production requirements. Therefore, it needs to be disposed of.
  • the edging device 6 is used for rounding and edging the device 6
  • the surface of the circular arc can be simultaneously contacted with the edges of the opposite sides of the edge of the substrate glass 1 to achieve rounding of the edges on both sides, thereby improving efficiency; of course, those skilled in the art can understand the edging
  • the device 6 is not limited in its shape as long as the corners can be contacted and rounded.
  • the substrate glass 1 only needs to treat the two corners of one side edge into rounded edges; in actual operation, the substrate glass 1 is passed through the grinding wheel set of the first film removing device 5 The molybdenum layer 2, the CIGS layer 3, and the TCO layer 4 in an outer edge region are removed, and the two corners of one edge are ground by the grinding wheel of the edging device 6, and the above two processes can be simultaneously performed.
  • the thin film solar cell in the embodiment of the present invention is a large-panel battery, and the four edges of the edge of the substrate glass 1 are processed into rounded edges, and the film removal process is first performed in the first process, and then in the same station. At the same time, the edging process is performed using the edging device 6.
  • the invention realizes the film removal by the film layers, and at the same time, realizes the edging of the substrate glass 1 at the same station, simplifies the process steps, and reduces the process cost.

Abstract

Provided are a film removal process for a film solar cell and the film solar cell. Corresponding positions of molybdenum (2), CIGS (3) and TCO (4) layers are removed in the same station, and edging is carried out on a substrate glass (1), so that a drain Mo area appears in an edge of the substrate glass (1), and an electrode leading-out wire (7) can be soldered conveniently. The film removal process is simple in procedures, and reduces the cost for the film solar cell prepared.

Description

一种薄膜太阳能电池除膜工艺及薄膜太阳能电池Thin film solar cell film removing process and thin film solar cell 技术领域Technical field
本发明涉及薄膜太阳能电池加工领域，尤其涉及一种薄膜太阳能电池除膜工艺及薄膜太阳能电池。The invention relates to the field of thin film solar cell processing, in particular to a thin film solar cell film removing process and a thin film solar cell.
背景技术Background technique
薄膜太阳能电池是光伏发电的未来趋势，特别是伴随着组件效率的进一步提升，柔性化、薄膜化将逐渐成为光伏市场的新兴发展方向。薄膜太阳能电池的优势在于：没有污染、低能耗、应用范围广泛。薄膜太阳能电池材料在温度系数、弱光发电方面具有明显优势，薄膜太阳能电池技术还有很大的提升空间和发展潜力。极具有前景的薄膜太阳能电池技术基于半导体Cu(In，Ga)Se2，缩写为CIGS，其具有证实的高效率和工作持久性。典型的CIGS太阳能电池包括厚度为2-3mm的玻璃衬底1、厚度为0.5-1μm的Mo背电极层2、1.5-2μm的CIGS层3、厚度为50nm的CdS缓冲层和0.5-1μm的ZnO窗口层5。任选的第二缓冲层6可位于CdS缓冲层和窗口层之间，并具有50nm的厚度。Thin-film solar cells are the future trend of photovoltaic power generation, especially with the further improvement of component efficiency. Flexibility and thin film will gradually become the emerging development direction of the photovoltaic market. The advantages of thin-film solar cells are: no pollution, low energy consumption, and a wide range of applications. Thin film solar cell materials have obvious advantages in temperature coefficient and low-light power generation, and thin-film solar cell technology has great room for improvement and development potential. The highly promising thin film solar cell technology is based on the semiconductor Cu(In,Ga)Se2, abbreviated CIGS, which has proven high efficiency and long-lasting workability. A typical CIGS solar cell includes a glass substrate having a thickness of 2-3 mm, a Mo back electrode layer having a thickness of 0.5-1 μm, a CIGS layer 3 of 1.5-2 μm, a CdS buffer layer having a thickness of 50 nm, and a ZnO of 0.5-1 μm. Window layer 5. An optional second buffer layer 6 can be located between the CdS buffer layer and the window layer and has a thickness of 50 nm.
CIGS层为p-导电Cu(In，Ga)(Se，S)2化合物。CdS缓冲层用作CIGS层的保护。窗口层为n-型导电掺杂氧化锌层。它和CIGS层形成pn-结并用作透明前接点。任选的第二缓冲层包括非掺杂的ZnO。统计上观察，与具有单个ZnO层的电池相比，具有这种第二缓冲层的太阳能电池表现出更好的性能。The CIGS layer is a p-conductive Cu(In,Ga)(Se,S)2 compound. The CdS buffer layer serves as a protection for the CIGS layer. The window layer is an n-type conductive doped zinc oxide layer. It forms a pn-junction with the CIGS layer and serves as a transparent front contact. The optional second buffer layer comprises undoped ZnO. It is statistically observed that a solar cell having such a second buffer layer exhibits better performance than a battery having a single ZnO layer.
为了能够可靠地实现太阳能电池组件的电绝缘和密封，薄膜太阳能电池组件的玻璃基板顶部在外周区域内的所有薄膜层通常都要在所谓的“边缘去除”操作中被完全去除。激光消融、喷砂处理和研磨是目前使用的边缘去除方法。边缘去除使得在外缘区域内获得对玻璃的密封成为可能，这样可以防止腐蚀太阳能电池组件的薄膜层。电绝缘也是防止漏电和短路所必需的。In order to be able to reliably achieve electrical insulation and sealing of the solar cell module, all of the film layers in the peripheral region of the glass substrate top of the thin film solar cell module are typically completely removed in a so-called "edge removal" operation. Laser ablation, sand blasting and grinding are currently used edge removal methods. Edge removal makes it possible to obtain a seal of the glass in the outer edge region, which prevents corrosion of the film layer of the solar cell module. Electrical insulation is also necessary to prevent leakage and short circuits.
而且，边缘去除操作之后通常是接触，也就是利用例如导电胶和铜条、可以将线缆连接其上的接线盒的层叠、配合和安装来进行太阳能电池最上方导电层(前触点)的所谓“边缘搭接”。所谓的“接线”可以例如通过基板内钻出的孔或者通过基板边缘被引至接线盒。Moreover, the edge removal operation is usually followed by contact, that is, by using, for example, a conductive paste and a copper strip, the stacking, mating, and mounting of the junction box on which the cable can be attached to perform the uppermost conductive layer (front contact) of the solar cell. The so-called "edge overlap." The so-called "wiring" can be led to the junction box, for example, through holes drilled in the substrate or through the edge of the substrate.
复杂的边缘去除和边缘搭接操作对于制作可靠的薄膜太阳能电池设备来说是很重要的因素。目前薄膜太阳能电池设备的发展需要具有高产量以获得低成本、高性能太阳能电池设备的有效工艺。用于降低成本的手段包括增加太阳能电池组件的表面积。因此，在保持或者优选地提高精度和清洁度的同时还要求边缘去除操作中的高去除率。如果直到接触和层叠时太阳能电池组件上仍然留有来自边缘去除步骤的残留物，那么最终太阳能电池设备的耐用性和性能可能就会明显下降。因此通常都需要有延长加工时间并限制产量的清洁操作。另外，来自加工操作的粉尘可能是有危害的，因此需要安全地收集并加以处理。Complex edge removal and edge lap operations are important factors in making reliable thin film solar cell devices. The current development of thin film solar cell devices requires an efficient process with high throughput to obtain low cost, high performance solar cell devices. Means for reducing costs include increasing the surface area of the solar cell module. Therefore, a high removal rate in the edge removal operation is also required while maintaining or preferably improving accuracy and cleanliness. If the residue from the edge removal step remains on the solar cell module until contact and lamination, the durability and performance of the final solar cell device may be significantly reduced. Therefore, cleaning operations with extended processing times and limited throughput are generally required. In addition, dust from processing operations can be hazardous and therefore needs to be safely collected and disposed of.
因此，需要一种工艺对各个膜层进行处理，使得基板玻璃边缘的出现漏Mo区域，焊接电极引出线。在现有的技术中现在的工艺方法一般分三步，第一步用激光或者喷砂的方法除掉边缘的所有膜层；第二步，用刮刀的方式将CIGS及TCO等膜层去掉，留下Mo层；第三步，用磨边机将基板玻璃边缘磨成圆边。Therefore, there is a need for a process for treating each film layer such that the edge of the substrate glass leaks into the Mo region and the electrode leads are drawn. In the prior art, the current process generally takes three steps. The first step is to remove all the layers of the edge by laser or sand blasting. In the second step, the film layers such as CIGS and TCO are removed by a doctor blade. The Mo layer is left; in the third step, the edge of the substrate glass is ground to a rounded edge by an edger.
但现有技术的处理工艺较为复杂，操作不便，大大影响工作效率。However, the processing technology of the prior art is complicated, and the operation is inconvenient, which greatly affects work efficiency.
发明内容Summary of the invention
本发明的目的是提供一种薄膜太阳能电池除膜工艺及薄膜太阳能电池，以解决现有技术中的问题，使得基板玻璃边缘出现漏Mo区域。It is an object of the present invention to provide a thin film solar cell film removing process and a thin film solar cell to solve the problems in the prior art such that a drain Mo region occurs at the edge of the substrate glass.
一方面，本发明提供了一种薄膜太阳能电池除膜工艺，包括以下步骤：In one aspect, the present invention provides a thin film solar cell film removal process comprising the following steps:
使用第一除膜装置除去薄膜太阳能电池的基板玻璃上方第一外缘区域内的钼层、CIGS层、TCO层；Removing the molybdenum layer, the CIGS layer, and the TCO layer in the first outer edge region above the substrate glass of the thin film solar cell using the first film removing device;
使用第二除膜装置除去位于所述钼层上方第二外缘区域内的CIGS层、TCO层。The CIGS layer and the TCO layer located in the second outer edge region above the molybdenum layer are removed using a second film removing device.
作为优选，所述的薄膜太阳能电池除膜工艺还包括：Preferably, the thin film solar cell film removal process further comprises:
使用磨边装置，将所述基板玻璃的边缘磨成圆角。The edges of the substrate glass are rounded using an edging device.
作为优选，所述第一除膜装置和磨边装置均包括磨轮组，所述第二除膜装置包括刮刀组。Preferably, the first film removing device and the edging device each comprise a grinding wheel set, and the second film removing device comprises a doctor blade set.
作为优选，所述第一外缘区域宽度为12mm，所述第二外缘区域宽度为4mm。Preferably, the first outer edge region has a width of 12 mm and the second outer edge region has a width of 4 mm.
作为优选，所述第一除膜装置的磨轮的粗糙度小于磨边装置的磨轮的粗糙度。Preferably, the roughness of the grinding wheel of the first film removing device is smaller than the roughness of the grinding wheel of the edge grinding device.
作为优选，所述磨轮转速为4000-6000转/分钟。Preferably, the grinding wheel has a rotational speed of 4000-6000 rpm.
作为优选，所述第二外缘区域的长度方向与薄膜太阳能电池的长轴方向平行。Preferably, the longitudinal direction of the second outer edge region is parallel to the long axis direction of the thin film solar cell.
作为优选，所述薄膜太阳能电池除膜工艺，还包括精修/修整步骤。Preferably, the thin film solar cell film removal process further comprises an finishing/trimming step.
另一方面，本发明还提供一种薄膜太阳能电池，所述薄膜太阳能电池包括基板玻璃，设置在基板玻璃上的钼层、CIGS层、TCO层，以及设置在钼层上方第二外缘区域的电极引出线，所述钼层、CIGS层、TCO层通过所述的薄膜太阳能电池除膜工艺进行处理。In another aspect, the present invention also provides a thin film solar cell comprising a substrate glass, a molybdenum layer disposed on the substrate glass, a CIGS layer, a TCO layer, and a second outer edge region disposed above the molybdenum layer The electrode lead wire, the molybdenum layer, the CIGS layer, and the TCO layer are processed by the thin film solar cell film removing process.
作为优选，所述基板玻璃的边缘进行磨圆边处理。Preferably, the edge of the substrate glass is subjected to a rounded edge treatment.
作为优选，通过磨边装置对基板玻璃的边缘进行磨圆边处理。Preferably, the edge of the substrate glass is subjected to rounding treatment by an edger.
作为优选，所述磨边装置包括磨轮组，且磨轮具有圆弧表面，所述圆弧表面可与基板玻璃的边缘的相对两侧的棱角同时接触。Preferably, the edging device comprises a grinding wheel set, and the grinding wheel has a circular arc surface which can be simultaneously contacted with an edge of opposite sides of the edge of the substrate glass.
本发明提供的薄膜太阳能电池除膜工艺及薄膜太阳能电池，通过对钼层、CIGS层、TCO层的相应位置进行除去，使得基板玻璃边缘出现漏Mo区域，从而方便焊接电极引出线；本发明的除膜工艺工序简单，操作方便，使得制作的薄膜太阳能电池成本较低，且可提高工作效率。The thin film solar cell film removing process and the thin film solar cell provided by the invention remove the corresponding positions of the molybdenum layer, the CIGS layer and the TCO layer, so that the Mo region is leaked at the edge of the substrate glass, thereby facilitating the welding of the electrode lead wires; The membrane removal process is simple and easy to operate, which makes the fabricated thin film solar cell low in cost and can improve work efficiency.
附图说明DRAWINGS
图1为本发明实施例提供的薄膜太阳能电池的结构示意图；1 is a schematic structural view of a thin film solar cell according to an embodiment of the present invention;
图2为本发明又一实施例提供的薄膜太阳能电池的除膜状态图；2 is a view showing a state of removing a film of a thin film solar cell according to another embodiment of the present invention;
图3为本发明又一实施例提供的薄膜太阳能电池的磨边状态图。FIG. 3 is a view showing a edging state of a thin film solar cell according to still another embodiment of the present invention.
附图标记说明：Description of the reference signs:
1-基板玻璃，2-钼层，3-CIGS层，4-TCO层，5-第一除膜装置，6-磨边装置，7-电极引出线。1-substrate glass, 2-molybdenum layer, 3-CIGS layer, 4-TCO layer, 5-first film removal device, 6-edging device, 7-electrode lead wire.
具体实施方式Detailed ways
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.
实施例一 Embodiment 1
本发明实施例提供了一种薄膜太阳能电池除膜工艺，包括以下步骤：Embodiments of the present invention provide a film removal process for a thin film solar cell, including the following steps:
使用第一除膜装置5除去所述薄膜太阳能电池的基板玻璃1上方第一外缘区域内的钼层2、CIGS层3、TCO层4；Removing the molybdenum layer 2, the CIGS layer 3, and the TCO layer 4 in the first outer edge region above the substrate glass 1 of the thin film solar cell using the first film removing device 5;
使用第二除膜装置除去位于所述钼层2上方第二外缘区域内的CIGS层3、TCO层4。The CIGS layer 3 and the TCO layer 4 located in the second outer edge region above the molybdenum layer 2 are removed using a second film removing device.
其中，如图1所示，也可参见图2，CIGS层3是指由Cu(铜)、In(铟)、Ga(镓)、Se(硒)四种元素构成最佳比例的黄铜矿结晶薄膜层，TCO层4是指透明的导电氧化物薄膜(Transparent Conductive Oxide)，基板玻璃1上方第一外缘区域，具体指基板玻璃1涂有薄膜层一侧的四周边缘区域，而钼层2上方第二外缘区域，具体指钼层2端部处的上方区域，即用于放置电极引出线7的漏Mo区域。As shown in FIG. 1 , referring also to FIG. 2 , the CIGS layer 3 refers to a chalcopyrite composed of four elements of Cu (copper), In (indium), Ga (gallium), and Se (selenium). The crystalline thin film layer, the TCO layer 4 refers to a transparent conductive oxide film (Transparent Conductive Oxide), the first outer edge region above the substrate glass 1, specifically the peripheral edge region of the substrate glass 1 coated with the film layer side, and the molybdenum layer 2 The upper second outer edge region specifically refers to an upper region at the end of the molybdenum layer 2, that is, a drain Mo region for placing the electrode lead wires 7.
本发明提供的薄膜太阳能电池除膜工艺及薄膜太阳能电池，通过对钼层2、CIGS层3、TCO层4的相应位置进行除去，使得基板玻璃1两端边缘出现漏Mo区域，从而方便焊接电极引出线7；本发明的除膜工艺工序简单，操作方便，使得制作的薄膜太阳能电池成本较低，且可提高工作效率。The thin film solar cell removing process and the thin film solar cell provided by the invention remove the corresponding positions of the molybdenum layer 2, the CIGS layer 3 and the TCO layer 4, so that the Mo region is leaked at both end edges of the substrate glass 1, thereby facilitating the welding electrode The lead-out line 7; the film removal process of the invention is simple and convenient to operate, so that the manufactured thin film solar cell has lower cost and can improve work efficiency.
作为优选，所述第一外缘区域宽度为12mm，所述第二外缘区域宽度为4mm。作为优选，所述第二外缘区域的长度方向与薄膜太阳能电池的长轴方向平行。Preferably, the first outer edge region has a width of 12 mm and the second outer edge region has a width of 4 mm. Preferably, the longitudinal direction of the second outer edge region is parallel to the long axis direction of the thin film solar cell.
其中，如图1所示，第二外缘区域的长度方向与薄膜太阳能电池的长轴方向均是指薄膜太阳能电池的纵向，即图1中垂直于纸面的方向，第二 外缘区域用于放置电极引出线7。Wherein, as shown in FIG. 1, the length direction of the second outer edge region and the long axis direction of the thin film solar cell refer to the longitudinal direction of the thin film solar cell, that is, the direction perpendicular to the paper surface in FIG. 1, and the second outer edge region. The electrode lead wire 7 is placed.
如图3所示，作为优选，所述的薄膜太阳能电池除膜工艺还包括：使用磨边装置6，将所述基板玻璃1的边缘磨成圆角。作为优选，如图2所示，所述第一除膜装置5和磨边装置6均包括磨轮组，且第一除膜装置和磨边装置在同一工位处，同时或先后进行除膜和磨边步骤。所述第二除膜装置包括刮刀组。作为优选，所述第一除膜装置5的磨轮的粗糙度小于磨边装置6的磨轮的粗糙度。作为优选，所述磨轮转速为4000-6000转/分钟。As shown in FIG. 3, preferably, the thin film solar cell film removing process further comprises: grinding the edges of the substrate glass 1 into rounded corners using an edging device 6. Preferably, as shown in FIG. 2, the first film removing device 5 and the edging device 6 each include a grinding wheel set, and the first film removing device and the edging device are at the same station, and the film is removed simultaneously or sequentially. Edge grinding step. The second film removing device includes a doctor blade set. Preferably, the roughness of the grinding wheel of the first film removing device 5 is smaller than the roughness of the grinding wheel of the edging device 6. Preferably, the grinding wheel has a rotational speed of 4000-6000 rpm.
其中，第一除膜装置5中的磨轮用于对钼层、CIGS层、TCO层进行除去，而磨边装置6中的磨轮用于对基板玻璃1的边缘磨成圆角，磨轮具有圆弧表面，圆弧表面可与基板玻璃1的边缘的相对两侧的棱角同时接触，使得能够同时对基板玻璃1的两相对边缘进行磨边，大大提高工作效率；根据实际工艺要求的不同，可设定第一除膜装置5的磨轮的粗糙度小于磨边装置6的磨轮的粗糙度，但本领域技术人员可知，对磨轮的粗糙度及转速不做具体限定，根据实际情况灵活设定；另外，对钼层2两端上方的CIGS层3、TCO层4一般通过刮刀进行处理，刮刀本身为现有技术，用来除膜，操作方便，且不易对钼层2产生额外伤害。Wherein, the grinding wheel in the first film removing device 5 is used for removing the molybdenum layer, the CIGS layer and the TCO layer, and the grinding wheel in the edging device 6 is used for grinding the edge of the substrate glass 1 and the grinding wheel has an arc The surface and the arc surface can be simultaneously contacted with the edges of the opposite sides of the edge of the substrate glass 1, so that the opposite edges of the substrate glass 1 can be edged at the same time, thereby greatly improving work efficiency; according to actual process requirements, it can be set The roughness of the grinding wheel of the first film removing device 5 is smaller than the roughness of the grinding wheel of the edging device 6, but those skilled in the art know that the roughness and the rotating speed of the grinding wheel are not specifically limited, and are flexibly set according to actual conditions; The CIGS layer 3 and the TCO layer 4 above the two ends of the molybdenum layer 2 are generally processed by a doctor blade. The blade itself is a prior art method for removing the film, is convenient to operate, and is not easy to cause additional damage to the molybdenum layer 2.
作为优选，所述薄膜太阳能电池除膜工艺，还包括精修/修整步骤。其中，在对电池进行以上工艺处理之后，还可进行精修/修整步骤，如对基板玻璃1及各个膜层进行抛光打磨等处理。Preferably, the thin film solar cell film removal process further comprises an finishing/trimming step. In the process of performing the above process on the battery, the finishing/trimming step may be performed, such as polishing and polishing the substrate glass 1 and each film layer.
实施例二 Embodiment 2
本发明另一个实施例提供一种薄膜太阳能电池，所述薄膜太阳能电池包括基板玻璃1，设置在基板玻璃1上的钼层2、CIGS层3、TCO层4，以及设置在钼层2上方第二外缘区域的电极引出线，所述钼层2、CIGS层3、TCO层4通过以上所述的薄膜太阳能电池除膜工艺进行处理。Another embodiment of the present invention provides a thin film solar cell including a substrate glass 1, a molybdenum layer 2 disposed on the substrate glass 1, a CIGS layer 3, a TCO layer 4, and a layer disposed above the molybdenum layer 2. The electrode lead wires of the two outer edge regions, the molybdenum layer 2, the CIGS layer 3, and the TCO layer 4 are processed by the thin film solar cell film removing process described above.
作为优选，如图3所示，所述基板玻璃1的边缘进行磨圆边处理。作为优选，通过磨边装置6对基板玻璃1的边缘进行磨圆边处理。作为优选，所述磨边装置6包括磨轮组，且磨轮具有圆弧表面，所述圆弧表面可与基板玻璃1的边缘的相对两侧的棱角同时接触。Preferably, as shown in FIG. 3, the edge of the substrate glass 1 is subjected to a rounded edge treatment. Preferably, the edge of the substrate glass 1 is subjected to rounding treatment by the edging device 6. Preferably, the edging device 6 comprises a grinding wheel set, and the grinding wheel has a circular arc surface which can be simultaneously contacted with the opposite side edges of the edge of the substrate glass 1.
其中，基板玻璃1的两端边缘一般为棱角状，容易产生损伤，也不符 合生产要求，因此需要将其处理掉，本发明实施例中，通过磨边装置6进行磨圆，磨边装置6具有圆弧表面，圆弧表面可与基板玻璃1的边缘的相对两侧的棱角同时接触，即可实现同时对两侧的棱角实现磨圆，提高效率；当然，本领域技术人员可知，磨边装置6不限定其形状，只要能对棱角进行接触并磨圆即可。The edge of the substrate glass 1 is generally angular, which is easy to cause damage and does not meet the production requirements. Therefore, it needs to be disposed of. In the embodiment of the present invention, the edging device 6 is used for rounding and edging the device 6 The surface of the circular arc can be simultaneously contacted with the edges of the opposite sides of the edge of the substrate glass 1 to achieve rounding of the edges on both sides, thereby improving efficiency; of course, those skilled in the art can understand the edging The device 6 is not limited in its shape as long as the corners can be contacted and rounded.
实施例三 Embodiment 3
本发明实施例的薄膜太阳能电池中，基板玻璃1只需将一侧边缘的两个棱角处理成圆角边；在实际操作时，通过第一除膜装置5的磨轮组将基板玻璃1上方第一外缘区域内的钼层2、CIGS层3、TCO层4除掉，而用磨边装置6的磨轮组磨一侧边缘的两个棱角，以上两个工序可同时进行。In the thin film solar cell of the embodiment of the invention, the substrate glass 1 only needs to treat the two corners of one side edge into rounded edges; in actual operation, the substrate glass 1 is passed through the grinding wheel set of the first film removing device 5 The molybdenum layer 2, the CIGS layer 3, and the TCO layer 4 in an outer edge region are removed, and the two corners of one edge are ground by the grinding wheel of the edging device 6, and the above two processes can be simultaneously performed.
实施例四 Embodiment 4
本发明实施例中的薄膜太阳能电池，为大面板的电池，基板玻璃1两侧边缘的四个棱角均需处理成圆角边，在第一工序中先进行除膜处理，之后在同一工位处，再使用磨边装置6进行磨边处理。The thin film solar cell in the embodiment of the present invention is a large-panel battery, and the four edges of the edge of the substrate glass 1 are processed into rounded edges, and the film removal process is first performed in the first process, and then in the same station. At the same time, the edging process is performed using the edging device 6.
本发明通过对各膜层实现除膜，同时，实现了在同一工位处对基板玻璃1实现磨边，简化了工艺步骤，且降低了工艺成本。The invention realizes the film removal by the film layers, and at the same time, realizes the edging of the substrate glass 1 at the same station, simplifies the process steps, and reduces the process cost.
以上依据图式所示的实施例详细说明了本发明的构造、特征及作用效果，以上所述仅为本发明的较佳实施例，但本发明不以图面所示限定实施范围，凡是依照本发明的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本发明的保护范围内。The embodiments, features and effects of the present invention are described in detail above with reference to the embodiments shown in the drawings. The above description is only a preferred embodiment of the present invention, but the present invention is not limited by the scope of the drawings, and It is intended that the present invention be construed as being limited by the scope of the invention.

Claims (12)

  1. 一种薄膜太阳能电池除膜工艺，其特征在于，包括以下步骤：A thin film solar cell film removing process characterized by comprising the following steps:
    使用第一除膜装置除去薄膜太阳能电池的基板玻璃上方第一外缘区域内的钼层、CIGS层、TCO层；Removing the molybdenum layer, the CIGS layer, and the TCO layer in the first outer edge region above the substrate glass of the thin film solar cell using the first film removing device;
    使用第二除膜装置除去位于所述钼层上方第二外缘区域内的CIGS层、TCO层。The CIGS layer and the TCO layer located in the second outer edge region above the molybdenum layer are removed using a second film removing device.
  2. 根据权利要求1所述的薄膜太阳能电池除膜工艺，其特征在于，所述薄膜太阳能电池除膜工艺还包括：The thin film solar cell film removing process according to claim 1, wherein the thin film solar cell film removing process further comprises:
    使用磨边装置，将所述基板玻璃的边缘磨成圆角。The edges of the substrate glass are rounded using an edging device.
  3. 根据权利要求2所述的薄膜太阳能电池除膜工艺，其特征在于，所述第一除膜装置和磨边装置均包括磨轮组，所述第二除膜装置包括刮刀组。The film removing process for a thin film solar cell according to claim 2, wherein the first film removing device and the edging device each comprise a grinding wheel set, and the second film removing device comprises a doctor blade set.
  4. 根据权利要求1所述的薄膜太阳能电池除膜工艺，其特征在于，所述第一外缘区域宽度为12mm，所述第二外缘区域宽度为4mm。The film removing process for a thin film solar cell according to claim 1, wherein the first outer edge region has a width of 12 mm and the second outer edge region has a width of 4 mm.
  5. 根据权利要求3所述的薄膜太阳能电池除膜工艺，其特征在于，所述第一除膜装置的磨轮的粗糙度小于磨边装置的磨轮的粗糙度。The film removing process for a thin film solar cell according to claim 3, wherein the roughness of the grinding wheel of the first film removing device is smaller than the roughness of the grinding wheel of the edge grinding device.
  6. 根据权利要求5所述的薄膜太阳能电池除膜工艺，其特征在于，所述磨轮转速为4000-6000转/分钟。The thin film solar cell film removing process according to claim 5, wherein the grinding wheel has a rotational speed of 4000-6000 rpm.
  7. 根据权利要求1所述的薄膜太阳能电池除膜工艺，其特征在于，所述第二外缘区域的长度方向与薄膜太阳能电池的长轴方向平行。The thin film solar cell film removing process according to claim 1, wherein a length direction of the second outer edge region is parallel to a long axis direction of the thin film solar cell.
  8. 根据权利要求1所述的薄膜太阳能电池除膜工艺，其特征在于，所述薄膜太阳能电池除膜工艺，还包括精修/修整步骤。The thin film solar cell film removing process according to claim 1, wherein the thin film solar cell film removing process further comprises an finishing/trimming step.
  9. 一种薄膜太阳能电池，所述薄膜太阳能电池包括基板玻璃，设置在基板玻璃上的钼层、CIGS层、TCO层，以及设置在钼层上方第二外缘区域的电极引出线，其特征在于，所述钼层、CIGS层、TCO层通过权利要求1-8任一项所述的薄膜太阳能电池除膜工艺进行处理。A thin film solar cell comprising a substrate glass, a molybdenum layer, a CIGS layer, a TCO layer disposed on the substrate glass, and an electrode lead line disposed on the second outer edge region above the molybdenum layer, wherein The molybdenum layer, the CIGS layer, and the TCO layer are processed by the thin film solar cell film removal process according to any one of claims 1-8.
  10. 根据权利要求9所述的薄膜太阳能电池，其特征在于，所述基板玻璃的边缘进行磨圆边处理。The thin film solar cell according to claim 9, wherein the edge of the substrate glass is subjected to rounding treatment.
  11. 根据权利要求10所述的薄膜太阳能电池，其特征在于，通过磨边装置对基板玻璃的边缘进行磨圆边处理。The thin film solar cell according to claim 10, wherein the edge of the substrate glass is subjected to rounding treatment by an edge grinding device.
  12. 根据权利要求11所述的薄膜太阳能电池，其特征在于，所述磨边装置包括磨轮组，且磨轮具有圆弧表面，所述圆弧表面可与基板玻璃的边缘的相对两侧的棱角同时接触。The thin film solar cell according to claim 11, wherein the edging device comprises a grinding wheel set, and the grinding wheel has a circular arc surface, and the circular arc surface can be in contact with the opposite sides of the edge of the substrate glass at the same time. .
PCT/CN2017/117926 2017-11-30 2017-12-22 Film solar cell film removal process and film solar cell WO2019104791A1 (en)

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