CN107978656A - A kind of thin-film solar cells film-removing technology and thin-film solar cells - Google Patents
A kind of thin-film solar cells film-removing technology and thin-film solar cells Download PDFInfo
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- CN107978656A CN107978656A CN201711238320.0A CN201711238320A CN107978656A CN 107978656 A CN107978656 A CN 107978656A CN 201711238320 A CN201711238320 A CN 201711238320A CN 107978656 A CN107978656 A CN 107978656A
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- 239000010409 thin film Substances 0.000 title claims abstract description 67
- 238000005516 engineering process Methods 0.000 title claims abstract description 35
- 239000005357 flat glass Substances 0.000 claims abstract description 38
- 238000007688 edging Methods 0.000 claims abstract description 26
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 25
- 239000011733 molybdenum Substances 0.000 claims abstract description 25
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims description 31
- 229910001651 emery Inorganic materials 0.000 claims description 25
- 238000007493 shaping process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 13
- 238000003466 welding Methods 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of thin-film solar cells film-removing technology and thin-film solar cells, by being removed and the relevant position of molybdenum layer, cigs layer, tco layer to base plate glass progress edging processing at same station, so that there are leakage Mo regions in base plate glass edge, so as to facilitate welding electrode lead-out wire.The film-removing technology process of the present invention is simple so that the thin-film solar cells cost of making is relatively low.
Description
Technical field
The present invention relates to thin-film solar cells manufacture field, more particularly to a kind of thin-film solar cells film-removing technology and
Thin-film solar cells.
Background technology
Thin-film solar cells is the future trend of photovoltaic generation, is particularly lifted with the further of component efficiency,
Flexibility, filming will be increasingly becoming the emerging developing direction of photovoltaic market.The advantage of thin-film solar cells is:Without dirt
Dye, low energy consumption, have wide range of applications.Thin-film solar cells material has a clear superiority in terms of temperature coefficient, dim light power generation,
Thin film solar cell technologies also have very big room for promotion and development potentiality.Great promising thin film solar cell technologies
Based on semiconductor Cu (In, Ga) Se2, CIGS is abbreviated as, it has the high efficiency confirmed and work persistence.Typical CIGS is too
Positive energy battery includes the glass substrate 1, the Mo back electrode layers 2 that thickness is 0.5-1 μm, 1.5-2 μm of cigs layer that thickness is 2-3mm
3rd, thickness is the CdS cushions and 0.5-1 μm of ZnO Window layers 5 of 50nm.Optional second buffer layer 6 can be located at CdS cushions
Between Window layer, and the thickness with 50nm.
Cigs layer is p- conductions Cu (In, Ga) (Se, S) 2 compound.CdS cushions are used as the protection of cigs layer.Window layer
For n-type conductiving doping zinc oxide film.It and cigs layer form pn- and tie and be used as transparent front contact.Optional second buffer layer bag
Include undoped ZnO.Statistically observe, compared with the battery with single ZnO layer, there is the solar energy of this second buffer layer
Battery shows better performance.
In order to be reliably achieved the electric insulation of solar cell module and sealing, the glass of Thinfilm solar cell assembly
All film layers of the glass substrate top in outer region will be usually completely removed in so-called " edge removal " operation.
Laser ablation, blasting treatment and grinding are the edge minimizing technologies used at present.Edge is removed so that being obtained in outer edge area
To the possibility that is sealed to of glass, the film layer of corrosion solar cell module can be so prevented.Electric insulation is also anti-leak-stopping
Necessary to electricity and short circuit.
Moreover, edge goes to be typically to contact after division operation, that is, using such as conducting resinl and copper bar, can be by cable
Stacking, cooperation and the installation for the terminal box being connected thereto carry out the so-called of solar cell the top conductive layer (front contact)
" overlapping edges ".So-called " wiring " for example can be directed to wiring by the hole that is drilled out in substrate or by substrate edges
Box.
Complicated edge removes and overlapping edges operation is very for making reliable thin-film solar cells equipment
Important factor.The development need of current thin film solar cell device has high yield to obtain low cost, the high-performance sun
Effective technique of energy battery apparatus.Means for reducing cost include the surface area of increase solar cell module.Therefore, exist
Keep or also require edge to remove the high removal rate in division operation while preferably improving precision and cleannes.If until connecing
The residue from edge removal step is still left on solar cell module, then final solar cell when touching and being laminated
The durability and performance of equipment will may be decreased obviously.Therefore usually it is required for extending process time and limits output clear
Clean operation.In addition, the dust from process operation is probably to have harm, it is therefore desirable to safely collects and is pocessed.
Each film layer is handled therefore, it is necessary to a kind of technique so that the appearance leakage Mo regions at base plate glass edge, weldering
Receiving electrode lead-out wire.The side of present process generally point three steps in existing technology, first step laser or sandblasting
Method removes all film layers at edge;Second step, the film layers such as CIGS and TCO are removed, leave Mo layers with the mode of scraper;3rd
Step, round edge is worn into edge polisher by base plate glass edge.
But the treatment process of the prior art is complex, inconvenient, largely effects on work efficiency.
The content of the invention
It is existing to solve the object of the present invention is to provide a kind of thin-film solar cells film-removing technology and thin-film solar cells
There is the problem of in technology so that leakage Mo regions occurs in base plate glass edge.
On the one hand, the present invention provides a kind of thin-film solar cells film-removing technology, comprise the following steps:
Using the first film removing device remove molybdenum layer above the base plate glass of thin-film solar cells in the first outer edge area,
Cigs layer, tco layer;
Cigs layer, tco layer in the second outer edge area above the molybdenum layer are removed using the second film removing device.
Preferably, the thin-film solar cells film-removing technology further includes:
Using edging device, fillet is worn into at the edge of the base plate glass.
Preferably, first film removing device and edging device include emery wheel group, second film removing device includes
Scraper group.
Preferably, the first outer edge area width is 12mm, the second outer edge area width is 4mm.
Preferably, the roughness of the emery wheel of first film removing device is less than the roughness of the emery wheel of edging device.
Preferably, the emery wheel rotating speed is 4000-6000 revs/min.
Preferably, the length direction of second outer edge area is parallel with the long axis direction of thin-film solar cells.
Preferably, the thin-film solar cells film-removing technology, further includes refine/pre-shaping step.
On the other hand, the present invention also provides a kind of thin-film solar cells, the thin-film solar cells to include substrate glass
Glass, molybdenum layer, cigs layer, the tco layer being arranged on base plate glass, and be arranged on the electrode of the second outer edge area above molybdenum layer and draw
Outlet, the molybdenum layer, cigs layer, tco layer are handled by the thin-film solar cells film-removing technology.
Preferably, the edge of the base plate glass carries out rounding side processing.
Preferably, rounding side processing is carried out to the edge of base plate glass by edging device.
Preferably, the edging device includes emery wheel group, and emery wheel has arc-shaped surface, and the arc-shaped surface can be with base
The corner angle of the opposite sides at the edge of glass sheet contact at the same time.
Thin-film solar cells film-removing technology provided by the invention and thin-film solar cells, by molybdenum layer, cigs layer,
The relevant position of tco layer is removed so that leakage Mo regions occurs in base plate glass edge, so as to facilitate welding electrode lead-out wire;
The film-removing technology process of the present invention is simple, easy to operate so that the thin-film solar cells cost of making is relatively low, and can improve work
Make efficiency.
Brief description of the drawings
Fig. 1 is the structure diagram of thin-film solar cells provided in an embodiment of the present invention;
Fig. 2 is the membrane removal state diagram for the thin-film solar cells that further embodiment of this invention provides;
Fig. 3 is the edging state diagram for the thin-film solar cells that further embodiment of this invention provides.
Description of reference numerals:
1- base plate glass, 2- molybdenum layers, 3-CIGS layers, 4-TCO layers, the first film removing devices of 5-, 6- edging devices, 7- electrodes draw
Outlet.
Embodiment
The embodiment of the present invention is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or has the function of same or like element.Below with reference to attached
The embodiment of figure description is exemplary, and is only used for explaining the present invention, and is not construed as limiting the claims.
Embodiment one
An embodiment of the present invention provides a kind of thin-film solar cells film-removing technology, comprise the following steps:
Removed using the first film removing device 5 in first outer edge area of the top of base plate glass 1 of the thin-film solar cells
Molybdenum layer 2, cigs layer 3, tco layer 4;
Cigs layer 3, tco layer 4 in second outer edge area of the top of molybdenum layer 2 are removed using the second film removing device.
Wherein, as shown in Figure 1, also can be found in Fig. 2, cigs layer 3 refers to by Cu (copper), In (indium), Ga (gallium), Se (selenium) four
Kind element forms the chalcopyrite crystalline film of optimal proportion, and tco layer 4 refers to transparent conductive oxide film
(Transparent Conductive Oxide), first outer edge area of the top of base plate glass 1, refers specifically to base plate glass 1 and scribbles
The edge region of film layer side, and second outer edge area of the top of molybdenum layer 2, refer specifically to the upper area of 2 end of molybdenum layer,
It is used for the leakage Mo regions for placing electrode outlet line 7.
Thin-film solar cells film-removing technology provided by the invention and thin-film solar cells, by molybdenum layer 2, cigs layer
3rd, the relevant position of tco layer 4 is removed so that leakage Mo regions occurs in 1 edges at two ends of base plate glass, so as to facilitate welding electrode
Lead-out wire 7;The film-removing technology process of the present invention is simple, easy to operate so that and the thin-film solar cells cost of making is relatively low, and
Work efficiency can be improved.
Preferably, the first outer edge area width is 12mm, the second outer edge area width is 4mm.As excellent
Choosing, the length direction of second outer edge area are parallel with the long axis direction of thin-film solar cells.
Wherein, as shown in Figure 1, the length direction of the second outer edge area and the long axis direction of thin-film solar cells are each meant
Perpendicular to the direction of paper in the longitudinal direction of thin-film solar cells, i.e. Fig. 1, the second outer edge area is used to place electrode outlet line 7.
As shown in figure 3, preferably, the thin-film solar cells film-removing technology further includes:Using edging device 6,
Fillet is worn into at the edge of the base plate glass 1.Preferably, as shown in Fig. 2, first film removing device 5 and edging device 6
Include emery wheel group, and the first film removing device and edging device be at same station, while or successively carry out membrane removal and edging step
Suddenly.Second film removing device includes scraper group.Preferably, the roughness of the emery wheel of first film removing device 5 is less than mill
The roughness of the emery wheel of side device 6.Preferably, the emery wheel rotating speed is 4000-6000 revs/min.
Wherein, the emery wheel in the first film removing device 5 is used to remove molybdenum layer, cigs layer, tco layer, and edging device 6
In emery wheel be used to wear into fillet to the edge of base plate glass 1, emery wheel has arc-shaped surface, and arc-shaped surface can be with base plate glass 1
The corner angle of opposite sides at edge contact at the same time, enabling while edging is carried out to two opposite edges of base plate glass 1, greatly
It is big to improve work efficiency;According to the difference of actual process requirement, the roughness that can set the emery wheel of the first film removing device 5 is less than mill
The roughness of the emery wheel of side device 6, but skilled person will appreciate that, the roughness and rotating speed of emery wheel are not specifically limited,
Flexibly set according to actual conditions;In addition, the cigs layer 3, tco layer 4 above 2 both ends of molybdenum layer generally by scraper at
Reason, scraper sheet is easy to operate for membrane removal as the prior art, and is not easy to produce additional injury to molybdenum layer 2.
Preferably, the thin-film solar cells film-removing technology, further includes refine/pre-shaping step.Wherein, to battery
After carrying out process above processing, refine/pre-shaping step can be also carried out, such as base plate glass 1 and each film layer are polished and beaten
The processing such as mill.
Embodiment two
Another embodiment of the present invention provides a kind of thin-film solar cells, and the thin-film solar cells includes substrate glass
Glass 1, molybdenum layer 2, cigs layer 3, the tco layer 4 being arranged on base plate glass 1, and it is arranged on second outer edge area of the top of molybdenum layer 2
Electrode outlet line, the molybdenum layer 2, cigs layer 3, tco layer 4 by above-described thin-film solar cells film-removing technology at
Reason.
Preferably, as shown in figure 3, the edge of the base plate glass 1 carries out rounding side processing.Preferably, pass through mill
The processing when device 6 carries out rounding to the edge of base plate glass 1.Preferably, the edging device 6 includes emery wheel group, and grind
Wheel has arc-shaped surface, and the arc-shaped surface can contact at the same time with the corner angle of the opposite sides at the edge of base plate glass 1.
Wherein, the edges at two ends of base plate glass 1 is generally angular, easily produces damage, does not also meet production requirement, because
This needs is processed to, and in the embodiment of the present invention, rounding is carried out by edging device 6, and edging device 6 has arc-shaped surface,
Arc-shaped surface can contact at the same time with the corner angle of the opposite sides at the edge of base plate glass 1, you can realize at the same time to the corner angle of both sides
Realize rounding, improve efficiency;Certainly, skilled person will appreciate that, edging device 6 does not limit its shape, as long as can be to corner angle
Contact simultaneously rounding.
Embodiment three
In the thin-film solar cells of the embodiment of the present invention, base plate glass 1 need to only be handled two corner angle of one side edge
Into round edge;In practical operation, by the emery wheel group of the first film removing device 5 by first outer edge area of the top of base plate glass 1
Molybdenum layer 2, cigs layer 3, tco layer 4 remove, and two corner angle of the emery wheel group mill one side edge with edging device 6, two above
Process can be carried out at the same time.
Example IV
Thin-film solar cells in the embodiment of the present invention, be big panel battery, four of 1 both sides of the edge of base plate glass
Corner angle are both needed to be processed into round edge, and membrane removal processing is first carried out in the first step, afterwards at same station, reuse edging dress
Put 6 carry out edging processing.
The present invention by realizing membrane removal to each film layer, meanwhile, realize and base plate glass 1 is realized at same station grind
Side, simplifies processing step, and reduces process costs.
The structure, feature and effect of the present invention, above institute are described in detail based on the embodiments shown in the drawings
Only presently preferred embodiments of the present invention is stated, but the present invention is not to limit practical range shown in drawing, it is every according to structure of the invention
Want made change, or be revised as the equivalent embodiment of equivalent variations, when not going beyond the spirit of the description and the drawings,
Should all be within the scope of the present invention.
Claims (12)
1. a kind of thin-film solar cells film-removing technology, it is characterised in that comprise the following steps:
Molybdenum layer, the CIGS above the base plate glass of thin-film solar cells in the first outer edge area are removed using the first film removing device
Layer, tco layer;
Cigs layer, tco layer in the second outer edge area above the molybdenum layer are removed using the second film removing device.
2. thin-film solar cells film-removing technology according to claim 1, it is characterised in that the thin-film solar cells
Film-removing technology further includes:
Using edging device, fillet is worn into at the edge of the base plate glass.
3. thin-film solar cells film-removing technology according to claim 2, it is characterised in that first film removing device and
Edging device includes emery wheel group, and second film removing device includes scraper group.
4. thin-film solar cells film-removing technology according to claim 1, it is characterised in that first rim area field width
It is 4mm to spend for 12mm, the second outer edge area width.
5. thin-film solar cells film-removing technology according to claim 3, it is characterised in that first film removing device
The roughness of emery wheel is less than the roughness of the emery wheel of edging device.
6. thin-film solar cells film-removing technology according to claim 5, it is characterised in that the emery wheel rotating speed is
4000-6000 revs/min.
7. thin-film solar cells film-removing technology according to claim 1, it is characterised in that second outer edge area
Length direction is parallel with the long axis direction of thin-film solar cells.
8. thin-film solar cells film-removing technology according to claim 1, it is characterised in that the thin-film solar cells
Film-removing technology, further includes refine/pre-shaping step.
9. a kind of thin-film solar cells, the thin-film solar cells includes base plate glass, the molybdenum being arranged on base plate glass
Layer, cigs layer, tco layer, and it is arranged on the electrode outlet line of the second outer edge area above molybdenum layer, it is characterised in that the molybdenum
Layer, cigs layer, tco layer are handled by claim 1-8 any one of them thin-film solar cells film-removing technologies.
10. thin-film solar cells according to claim 9, it is characterised in that ground at the edge of the base plate glass
Round edge processing.
11. thin-film solar cells according to claim 10, it is characterised in that by edging device to base plate glass
Edge carries out rounding side processing.
12. thin-film solar cells according to claim 11, it is characterised in that the edging device includes emery wheel group,
And emery wheel has arc-shaped surface, the arc-shaped surface can contact at the same time with the corner angle of the opposite sides at the edge of base plate glass.
Priority Applications (2)
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CN201711238320.0A CN107978656A (en) | 2017-11-30 | 2017-11-30 | A kind of thin-film solar cells film-removing technology and thin-film solar cells |
PCT/CN2017/117926 WO2019104791A1 (en) | 2017-11-30 | 2017-12-22 | Film solar cell film removal process and film solar cell |
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CN201711238320.0A CN107978656A (en) | 2017-11-30 | 2017-11-30 | A kind of thin-film solar cells film-removing technology and thin-film solar cells |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108666394A (en) * | 2018-07-20 | 2018-10-16 | 北京铂阳顶荣光伏科技有限公司 | A kind of hull cell reworking method and hull cell processing procedure rework system |
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