WO2019100487A1 - 背沟道蚀刻型tft基板及其制作方法 - Google Patents
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Abstract
一种背沟道蚀刻型TFT基板及其制备方法。所述方法采用C轴结晶IGZO薄膜来制备有源层(40),由于C轴结晶IGZO具有极强的耐腐蚀性,能够抵抗铜蚀刻液的侵蚀,因此在源极(51)与漏极(52)的蚀刻过程中,有源层(40)不会受到损害,保证有源层(40)的性能稳定,制得的背沟道蚀刻型TFT基板具有稳定的电学性能。另外,用于制备C轴结晶IGZO薄膜的非晶IGZO薄膜在高氧气氛下制备得到,使得非晶IGZO薄膜的结晶退火温度下降到600℃或以下,省去了高温退火炉的投入,降低生产成本。所述背沟道蚀刻型TFT基板采用上述方法制得,具有稳定的电学性能,且生产成本低。
Description
本发明涉及显示技术领域,尤其涉及一种背沟道蚀刻型TFT基板及其制作方法。
液晶显示装置(Liquid Crystal Display,LCD)具有机身薄、省电、无辐射等众多优点,得到了广泛的应用,如:移动电话、个人数字助理(PDA)、数字相机、计算机屏幕和笔记本电脑屏幕等。
现有市场上的液晶显示装置大部分为背光型液晶显示器,其包括液晶显示面板及背光模组(backlight module)。通常液晶显示面板包括彩膜(Color Filter,CF)基板、薄膜晶体管(Thin Film Transistor,TFT)阵列基板、及设于CF基板与TFT阵列基板之间的液晶(Liquid Crystal)。通过对TFT阵列基板供电与否来控制液晶分子改变方向,将背光模组的光线投射到CF基板产生不同色彩显示。TFT阵列基板的性能特征和运行特性很大程度上取决于形成TFT阵列基板的半导体元件特性。
现有的TFT阵列基板通常采用非晶硅(a-Si)材料来制作半导体层,然而,随着液晶显示装置朝着大尺寸(75寸以上)和高分辨率(8K4K)的方向发展以及源漏极中金属铜(Cu)的使用,传统的a-Si仅有1cm2/(Vs)左右的迁移率已经无法满足要求,以铟镓锌氧化物(IGZO)为代表的金属氧化物材料具备超过15cm2/(Vs)以上的迁移率,而且相应薄膜晶体管的制备与现有的a-Si为半导体驱动的产线的兼容性好,近年来迅速成为显示领域研发的重点。
相对于传统的a-Si TFT,IGZO TFT具有以下优势:
1、提高显示背板的分辨率,在保证相同透过率的前提下,IGZO TFT显示背板的分辨率可以做到a-Si TFT的2倍以上,IGZO材料中的载流子浓度高,迁移率大,可以缩小TFT的体积,保证分辨率的提升;
2、减少显示器件的能耗,IGZO TFT与a-Si TFT、LTPS TFT相比,漏电流小于1pA;驱动频率由原来的30-50Hz减少到2-5Hz,通过特殊工艺,甚至可以达到1Hz,虽然减少TFT的驱动次数,仍然可以维持液晶分子的配向,不影响画面的质量,从而减少显示背板的耗电量;另外,IGZO半导体材料的高迁移率使得较小尺寸的TFT即可提供足够的充电能力和较高的
电容值,而且提高了液晶面板的开口率,光穿透的有效面积变大,可以用较少的背板组件或低功率消耗达到相同的亮度,减少能耗;
3、通过采用间歇式驱动等方式,能够降低液晶显示器驱动电路的噪点对触摸屏检测电路造成的影响,可以实现更高的灵敏度,甚至尖头的圆珠笔笔端也能够响应,而且由于画面无更新时可以切断电源,因此其在节能的效果上表现更为优秀。
目前,IGZO TFT一般采用刻蚀阻挡(ESL)结构,由于有刻蚀阻挡层(Etch Stop Layer)存在,源漏极(Source/Drain)蚀刻过程,刻蚀阻挡层可以有效的保护IGZO不受到影响,保证TFT具有优异的半导体特性。但是ESL结构的IGZO TFT的制备过程较为复杂,需要经过6次黄光工艺,不利于降低成本,因此业界普遍追求黄光工艺更少的背沟道蚀刻(BCE)结构的IGZO TFT的开发。
BCE结构IGZO TFT的实现是在采用金属铜制作源漏极的同时,去除刻蚀阻挡层(Etch Stop Layer),达到减少一次黄光工艺的目的,然而现有的铜蚀刻液不可避免的会对IGZO有源层造成一定程度的蚀刻,使IGZO有源层的表面特性发生改变,从而使TFT基板的稳定性变差。
发明内容
本发明的目的在于提供一种背沟道蚀刻型TFT基板的制作方法,能够保证在源极与漏极的蚀刻过程中,有源层不会受到损害,保证有源层的性能稳定,制得的背沟道蚀刻型TFT基板具有稳定的电学性能,且生产成本低。
本发明的目的还在于提供一种背沟道蚀刻型TFT基板,具有稳定的电学性能,且生产成本低。
为实现上述目的,本发明提供一种背沟道蚀刻型TFT基板的制作方法,包括:
提供衬底基板,在所述衬底基板上形成栅极,在所述栅极及衬底基板上形成栅极绝缘层;
在所述栅极绝缘层上形成C轴结晶IGZO薄膜,对所述C轴结晶IGZO薄膜进行图形化处理后,得到有源层;
在所述有源层上形成间隔设置的源极与漏极。
在所述栅极绝缘层上形成C轴结晶IGZO薄膜的步骤包括:
采用磁控溅射方法在栅极绝缘层上沉积非晶IGZO薄膜,溅射沉积过程中,在反应腔体内添加氧气,且氧气在反应腔体内气体总量中的体积百分
比大于40%,得到的非晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4;
对非晶IGZO薄膜进行退火处理,得到C轴结晶IGZO薄膜。
所述C轴结晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4。
对非晶IGZO薄膜进行退火处理的退火温度小于或等于600℃。
所述源极与漏极的材料包括铜。
本发明还提供一种背沟道蚀刻型TFT基板,包括:衬底基板、设于所述衬底基板上的栅极、设于所述栅极及衬底基板上的栅极绝缘层、设于所述栅极绝缘层上的有源层、及设于所述有源层上且间隔设置的源极与漏极;其中,所述有源层为C轴结晶IGZO薄膜。
所述C轴结晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4。
所述源极与漏极的材料包括铜。
本发明还提供一种背沟道蚀刻型TFT基板的制作方法,包括:
提供衬底基板,在所述衬底基板上形成栅极,在所述栅极及衬底基板上形成栅极绝缘层;
在所述栅极绝缘层上形成C轴结晶IGZO薄膜,对所述C轴结晶IGZO薄膜进行图形化处理后,得到有源层;
在所述有源层上形成间隔设置的源极与漏极;
其中,在所述栅极绝缘层上形成C轴结晶IGZO薄膜的步骤包括:
采用磁控溅射方法在栅极绝缘层上沉积非晶IGZO薄膜,溅射沉积过程中,在反应腔体内添加氧气,且氧气在反应腔体内气体总量中的体积百分比大于40%,得到的非晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4;
对非晶IGZO薄膜进行退火处理,得到C轴结晶IGZO薄膜;
其中,所述C轴结晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4;
其中,对非晶IGZO薄膜进行退火处理的退火温度小于或等于600℃;
其中,所述源极与漏极的材料包括铜。
本发明的有益效果:本发明的背沟道蚀刻型TFT基板的制作方法采用C轴结晶IGZO薄膜来制备有源层,由于C轴结晶IGZO具有极强的耐腐蚀性,能够抵抗铜蚀刻液的侵蚀,因此在源极与漏极的蚀刻过程中,有源层不会受到损害,保证有源层的性能稳定,制得的背沟道蚀刻型TFT基板具
有稳定的电学性能。另外,用于制备C轴结晶IGZO薄膜的非晶IGZO薄膜在高氧气氛下制备得到,使得非晶IGZO薄膜的结晶退火温度下降到600℃或以下,省去了高温退火炉的投入,降低生产成本。本发明的背沟道蚀刻型TFT基板采用上述方法制得,具有稳定的电学性能,且生产成本低。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为本发明的背沟道蚀刻型TFT基板的制作方法的流程图;
图2为本发明的背沟道蚀刻型TFT基板的制作方法的步骤S1的示意图;
图3为本发明的背沟道蚀刻型TFT基板的制作方法的步骤S2的示意图;
图4为本发明的背沟道蚀刻型TFT基板的制作方法的步骤S3的示意图及本发明的背沟道蚀刻型TFT基板的结构示意图。
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1,本发明提供一种背沟道蚀刻型TFT基板的制作方法,包括如下步骤:
步骤S1、如图2所示,提供衬底基板10,在所述衬底基板10上形成栅极20,在所述栅极20及衬底基板10上形成栅极绝缘层30。
具体的,所述衬底基板10为玻璃基板。
具体的,所述栅极20的材料包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
具体的,在所述衬底基板10上形成栅极20的步骤包括:在所述衬底基板10上沉积第一金属薄膜,采用光刻制程对所述第一金属薄膜进行图形化处理后,得到栅极20。
具体的,所述栅极绝缘层30为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加形成的复合层。
具体的,所述栅极绝缘层30采用化学气相沉积方法(CVD)沉积得到。
步骤S2、如图3所示,在所述栅极绝缘层30上形成C轴结晶IGZO薄膜,对所述C轴结晶IGZO薄膜进行图形化处理后,得到有源层40。
具体的,在所述栅极绝缘层30上形成C轴结晶IGZO薄膜的步骤包括:
采用磁控溅射方法在栅极绝缘层30上沉积非晶IGZO薄膜,溅射沉积过程中,在反应腔体内添加氧气,且氧气在反应腔体内气体总量中的体积百分比大于40%,得到的非晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4;
对非晶IGZO薄膜进行退火处理,得到C轴结晶IGZO薄膜。
具体的,在非晶IGZO薄膜的溅射沉积过程中,反应腔体内的气体包括氧气和氩气。
在非晶IGZO薄膜的溅射沉积过程中,氧气起到增加非晶IGZO薄膜中氧含量的作用,正常情况下,反应腔体内氧气的添加量为5%-20%(体积百分比),得到的非晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:4,本发明通过提高反应腔体内氧气的体积百分比,提高了非晶IGZO薄膜中的氧含量,使非晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4,因此退火后得到的C轴结晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4。
由于非晶IGZO薄膜具有较高的氧含量,在后续的结晶退火过程中,高氧含量能够有效保证非晶IGZO结晶时In/Ga/Zn断键对氧元素的需求,降低结晶退火温度。
具体的,对非晶IGZO薄膜进行退火处理的退火温度小于或等于600℃。
目前非晶IGZO(a-IGZO)沉积时添加的O2气氛为整体气氛的5%-20%(体积百分比),此氧含量条件下得到的非晶IGZO薄膜的结晶退火温度高达1200℃或以上。而本发明在O2气氛大于40%(体积百分比)的条件下沉积得到的非晶IGZO薄膜的结晶退火温度可以下降到600℃或以下,省去了高温退火炉的投入,降低生产成本。步骤S3、如图4所示,在所述有源层40上形成间隔设置的源极51与漏极52。
具体的,所述源极51与漏极52的材料包括铜。由于所述有源层40的材料为C轴结晶IGZO,而C轴结晶IGZO具有极强的耐腐蚀性,能够抵抗铜蚀刻液的侵蚀,因此在源极51与漏极52的蚀刻过程中,有源层40不会受到损害,保证有源层40的性能稳定,制得的背沟道蚀刻型TFT基板具有稳定的电学性能。
可选的,所述源极51与漏极52的材料还包括钼(Mo)、铝(Al)、钛(Ti)、铬(Cr)中的一种或多种。
具体的,在所述有源层40上形成间隔设置的源极51与漏极52的步骤包括:在所述有源层40与栅极绝缘层30上沉积第二金属薄膜,采用光刻制程对所述第二金属薄膜进行图形化处理后,得到位于有源层40上且间隔设置的源极51与漏极52。
本发明的背沟道蚀刻型TFT基板的制作方法采用C轴结晶IGZO薄膜来制备有源层40,由于C轴结晶IGZO具有极强的耐腐蚀性,能够抵抗铜蚀刻液的侵蚀,因此在源极51与漏极52的蚀刻过程中,有源层40不会受到损害,保证有源层40的性能稳定,制得的背沟道蚀刻型TFT基板具有稳定的电学性能。另外,用于制备C轴结晶IGZO薄膜的非晶IGZO薄膜在高氧气氛下制备得到,使得非晶IGZO薄膜的结晶退火温度下降到600℃或以下,省去了高温退火炉的投入,降低生产成本。
请参阅图4,基于上述背沟道蚀刻型TFT基板的制作方法,本发明还提供一种背沟道蚀刻型TFT基板,包括:衬底基板10、设于所述衬底基板10上的栅极20、设于所述栅极20及衬底基板10上的栅极绝缘层30、设于所述栅极绝缘层30上的有源层40、及设于所述有源层40上且间隔设置的源极51与漏极52;其中,所述有源层40为C轴结晶IGZO薄膜。
具体的,所述C轴结晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4。
具体的,所述源极51与漏极52的材料包括铜。
可选的,所述源极51与漏极52的材料还包括钼(Mo)、铝(Al)、钛(Ti)、铬(Cr)中的一种或多种。
具体的,所述衬底基板10为玻璃基板。
具体的,所述栅极绝缘层30为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加形成的复合层。
本发明的背沟道蚀刻型TFT基板采用C轴结晶IGZO薄膜来制备有源层40,由于C轴结晶IGZO具有极强的耐腐蚀性,能够抵抗铜蚀刻液的侵蚀,因此该背沟道蚀刻型TFT基板具有稳定的电学性能。另外,C轴结晶IGZO薄膜在高氧气氛下制备得到,结晶退火温度低,省去了高温退火炉的投入,生产成本低。
综上所述,本发明提供一种背沟道蚀刻型TFT基板及其制备方法。本发明的背沟道蚀刻型TFT基板的制作方法采用C轴结晶IGZO薄膜来制备有源层,由于C轴结晶IGZO具有极强的耐腐蚀性,能够抵抗铜蚀刻液的侵蚀,因此在源极与漏极的蚀刻过程中,有源层不会受到损害,保证有源层的性能稳定,制得的背沟道蚀刻型TFT基板具有稳定的电学性能。另外,
用于制备C轴结晶IGZO薄膜的非晶IGZO薄膜在高氧气氛下制备得到,使得非晶IGZO薄膜的结晶退火温度下降到600℃或以下,省去了高温退火炉的投入,降低生产成本。本发明的背沟道蚀刻型TFT基板采用上述方法制得,具有稳定的电学性能,且生产成本低。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (9)
- 一种背沟道蚀刻型TFT基板的制作方法,包括:提供衬底基板,在所述衬底基板上形成栅极,在所述栅极及衬底基板上形成栅极绝缘层;在所述栅极绝缘层上形成C轴结晶IGZO薄膜,对所述C轴结晶IGZO薄膜进行图形化处理后,得到有源层;在所述有源层上形成间隔设置的源极与漏极。
- 如权利要求1所述的背沟道蚀刻型TFT基板的制作方法,其中,在所述栅极绝缘层上形成C轴结晶IGZO薄膜的步骤包括:采用磁控溅射方法在栅极绝缘层上沉积非晶IGZO薄膜,溅射沉积过程中,在反应腔体内添加氧气,且氧气在反应腔体内气体总量中的体积百分比大于40%,得到的非晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4;对非晶IGZO薄膜进行退火处理,得到C轴结晶IGZO薄膜。
- 如权利要求2所述的背沟道蚀刻型TFT基板的制作方法,其中,所述C轴结晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4。
- 如权利要求2所述的背沟道蚀刻型TFT基板的制作方法,其中,对非晶IGZO薄膜进行退火处理的退火温度小于或等于600℃。
- 如权利要求1所述的背沟道蚀刻型TFT基板的制作方法,其中,所述源极与漏极的材料包括铜。
- 一种背沟道蚀刻型TFT基板,包括:衬底基板、设于所述衬底基板上的栅极、设于所述栅极及衬底基板上的栅极绝缘层、设于所述栅极绝缘层上的有源层、及设于所述有源层上且间隔设置的源极与漏极;其中,所述有源层为C轴结晶IGZO薄膜。
- 如权利要求6所述的背沟道蚀刻型TFT基板,其中,所述C轴结晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4。
- 如权利要求6所述的背沟道蚀刻型TFT基板,其中,所述源极与漏极的材料包括铜。
- 一种背沟道蚀刻型TFT基板的制作方法,包括:提供衬底基板,在所述衬底基板上形成栅极,在所述栅极及衬底基板 上形成栅极绝缘层;在所述栅极绝缘层上形成C轴结晶IGZO薄膜,对所述C轴结晶IGZO薄膜进行图形化处理后,得到有源层;在所述有源层上形成间隔设置的源极与漏极;其中,在所述栅极绝缘层上形成C轴结晶IGZO薄膜的步骤包括:采用磁控溅射方法在栅极绝缘层上沉积非晶IGZO薄膜,溅射沉积过程中,在反应腔体内添加氧气,且氧气在反应腔体内气体总量中的体积百分比大于40%,得到的非晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4;对非晶IGZO薄膜进行退火处理,得到C轴结晶IGZO薄膜;其中,所述C轴结晶IGZO薄膜中铟镓锌氧的摩尔比为In:Ga:Zn:O=1:1:1:X,其中X大于4;其中,对非晶IGZO薄膜进行退火处理的退火温度小于或等于600℃;其中,所述源极与漏极的材料包括铜。
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