WO2019098547A3 - 증착용 마스크 및 이의 제조 방법 - Google Patents

증착용 마스크 및 이의 제조 방법 Download PDF

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Publication number
WO2019098547A3
WO2019098547A3 PCT/KR2018/012484 KR2018012484W WO2019098547A3 WO 2019098547 A3 WO2019098547 A3 WO 2019098547A3 KR 2018012484 W KR2018012484 W KR 2018012484W WO 2019098547 A3 WO2019098547 A3 WO 2019098547A3
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WO
WIPO (PCT)
Prior art keywords
photoresist layer
metal plate
mask
forming
deposition
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Application number
PCT/KR2018/012484
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English (en)
French (fr)
Other versions
WO2019098547A2 (ko
Inventor
이상유
조영득
김남호
Original Assignee
엘지이노텍 주식회사
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Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to CN201880074235.1A priority Critical patent/CN111373564B/zh
Priority to CN202311642265.7A priority patent/CN117769337A/zh
Publication of WO2019098547A2 publication Critical patent/WO2019098547A2/ko
Publication of WO2019098547A3 publication Critical patent/WO2019098547A3/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

실시예는 OLED 화소 증착을 위한 증착용 마스크의 제조 방법에 대한 것으로, 금속판을 준비하는 단계, 상기 금속판의 일면 상에 제 1 포토레지스트층을 배치하고 상기 제 1 포토레지스트층을 노광 및 현상하여 상기 제 1 포토레지스트층을 패턴화하는 단계, 패턴화된 상기 제 1 포토레지스트층의 오픈부를 하프 에칭하여 상기 금속판의 일면 상에 제 1 홈을 형성하는 단계, 상기 금속판의 일면과 반대되는 타면 상에 제 2 포토레지스트층을 배치하고, 상기 제 2 포토레지스트층을 노광 및 현상하여 제 2 포토레지스트층을 패턴화하는 단계, 패턴화된 상기 제 2 포토레지스트층의 오픈부를 하프 에칭하여 상기 제 1 홈과 연결되는 관통홀을 형성하는 단계 및 상기 제 1 포토레지스트층 및 상기 제 2 포토레지스트층을 제거하여 상기 금속판 상에 마스크 패턴을 형성하는 단계를 포함하고, 상기 금속판은 하기 수학식 1로 표시되는 직진도 값을 가지며 상기 금속판의 직진도는 0.006% 이하이다.
PCT/KR2018/012484 2017-11-16 2018-10-22 증착용 마스크 및 이의 제조 방법 WO2019098547A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201880074235.1A CN111373564B (zh) 2017-11-16 2018-10-22 用于沉积的掩模及用于制造该掩模的方法
CN202311642265.7A CN117769337A (zh) 2017-11-16 2018-10-22 制造用于有机发光二极管沉积的沉积掩模的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0152746 2017-11-16
KR1020170152746A KR20190055910A (ko) 2017-11-16 2017-11-16 증착용 마스크 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
WO2019098547A2 WO2019098547A2 (ko) 2019-05-23
WO2019098547A3 true WO2019098547A3 (ko) 2019-07-11

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ID=66540304

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KR (1) KR20190055910A (ko)
CN (2) CN117769337A (ko)
WO (1) WO2019098547A2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110428748A (zh) * 2019-08-09 2019-11-08 厦门强力巨彩光电科技有限公司 一种led显示屏面罩的制造方法
CN112825348A (zh) * 2019-11-20 2021-05-21 旭晖应用材料股份有限公司 用于蒸镀制程形成微小图案镀膜的金属遮罩及其制法
KR102206894B1 (ko) * 2020-07-21 2021-01-25 풍원정밀(주) Oled 증착용 메탈 마스크 및 그의 제조방법
CN112309986B (zh) * 2020-10-30 2022-03-29 福建省晋华集成电路有限公司 版图结构、半导体器件及其形成方法
TWI757041B (zh) * 2021-01-08 2022-03-01 達運精密工業股份有限公司 遮罩

Citations (5)

* Cited by examiner, † Cited by third party
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JP2009041054A (ja) * 2007-08-07 2009-02-26 Sony Corp 蒸着用マスクおよびその製造方法ならびに表示装置の製造方法
JP2011034681A (ja) * 2009-07-29 2011-02-17 Hitachi Displays Ltd 金属加工方法、金属マスク製造方法及び有機ｅｌ表示装置製造方法
KR20160069078A (ko) * 2014-12-05 2016-06-16 삼성디스플레이 주식회사 증착용 마스크 제조 방법
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KR101931770B1 (ko) * 2011-11-30 2018-12-24 삼성디스플레이 주식회사 마스크 조립체 및 유기 발광 표시장치
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JP5455099B1 (ja) * 2013-09-13 2014-03-26 大日本印刷株式会社 金属板、金属板の製造方法、および金属板を用いてマスクを製造する方法
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KR102590890B1 (ko) * 2016-02-16 2023-10-19 엘지이노텍 주식회사 금속판, 증착용마스크 및 이를 이용한 oled 패널
CN110144547B (zh) * 2016-04-14 2021-06-01 凸版印刷株式会社 蒸镀掩模用基材、蒸镀掩模用基材的制造方法及蒸镀掩模的制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009041054A (ja) * 2007-08-07 2009-02-26 Sony Corp 蒸着用マスクおよびその製造方法ならびに表示装置の製造方法
JP2011034681A (ja) * 2009-07-29 2011-02-17 Hitachi Displays Ltd 金属加工方法、金属マスク製造方法及び有機ｅｌ表示装置製造方法
KR20160069078A (ko) * 2014-12-05 2016-06-16 삼성디스플레이 주식회사 증착용 마스크 제조 방법
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Also Published As

Publication number Publication date
CN111373564A (zh) 2020-07-03
CN111373564B (zh) 2023-12-26
CN117769337A (zh) 2024-03-26
KR20190055910A (ko) 2019-05-24
WO2019098547A2 (ko) 2019-05-23

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