WO2019095565A1 - 串联量子点发光器件、面板即显示器 - Google Patents

串联量子点发光器件、面板即显示器 Download PDF

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WO2019095565A1
WO2019095565A1 PCT/CN2018/075551 CN2018075551W WO2019095565A1 WO 2019095565 A1 WO2019095565 A1 WO 2019095565A1 CN 2018075551 W CN2018075551 W CN 2018075551W WO 2019095565 A1 WO2019095565 A1 WO 2019095565A1
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layer
light emitting
emitting unit
quantum dot
electrode
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肖娅丹
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/86—Series electrical configurations of multiple OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE

Definitions

  • the present invention relates to the field of displays, and more particularly to a quantum dot light emitting device connected in series.
  • OLEDs Organic electroluminescent diodes
  • QLED quantum dot light-emitting diode
  • OLED and QLED are hotspots for future high-end display technology research.
  • the quantum dot luminescent material has the advantages of color saturation of the emitted light, adjustable wavelength, extremely narrow half-width, high electroluminescence efficiency, and can be used in a solution process and can be used for a flexible device, and is considered to be a next-generation display technology.
  • a strong competitor
  • quantum dot light-emitting diodes have developed rapidly, but the OLED technology that is increasingly mature for mass production still has great differences in efficiency and lifetime. How to effectively improve the luminous efficiency of QLED devices has become an urgent problem to be solved.
  • the purpose of the invention is to make the QLED device have a very high color saturation and also have a very high luminous efficiency, thereby providing a hybrid QLED device structure, which specifically includes the following technical solutions:
  • a tandem quantum dot light emitting device each of which is arranged in a stack, comprising a first electrode and a second electrode; a first light emitting unit and a second light emitting unit disposed between the first electrode and the second electrode; a charge generation layer between the first light emitting unit and the second light emitting unit; the first light emitting unit includes a quantum dot light emitting layer, and the second light emitting unit includes an organic light emitting layer.
  • first electrode is for providing an anode and the second electrode is for providing a cathode.
  • the first light emitting unit is located at one side of the first electrode.
  • the charge generation layer comprises an N-type charge generation layer and a P-type charge generation layer.
  • the N-type charge generation layer and the P-type charge generation layer are formed of different materials.
  • the N-type charge generation layer is located on one side of the first electrode.
  • the first light-emitting unit further includes a hole injection layer, a hole transport layer, and an electron transport layer on a side close to the first electrode, and the quantum dot light-emitting layer is located at the hole transport layer and the Between the electron transport layers.
  • the second light emitting unit further includes an electron injection layer, an electron transport layer and a hole transport layer, wherein the organic light emitting layer is located at the electron transport layer and the hole Between the transport layers.
  • the material of the N-type charge generating layer is one of ZnO, TiO or BPhen: Cs2CO3; the material of the P-type charge generating layer is one of neutral PEDOT, MoOx, WOx, C60 or HATCN.
  • the invention further relates to a display panel comprising the above-described series quantum dot light emitting device.
  • the invention also relates to a display employing the above display panel.
  • the tandem quantum dot light-emitting device of the present invention utilizes a stacked P-type charge generation layer and an N-type charge generation layer, and connects the QLED device structure and the OLED device structure in series through a pair of electrodes, and combines the two diode light-emitting devices to complement each other.
  • a series of light-emitting devices having a narrow half-width, high color saturation, and high light-emitting efficiency are formed.
  • FIG. 1 is a schematic view of a tandem quantum dot light-emitting device of the present invention
  • FIG. 2 is a schematic view of an energy band of a tandem quantum dot light-emitting device of the present invention.
  • a first electrode 20, a first light-emitting unit 30, a charge generation layer 40, a second light-emitting unit 50, and a second electrode 60 are laminated in this order. That is, the first light emitting unit 30, the charge generating layer 40, and the second light emitting unit 50 are disposed between the first electrode 20 and the second electrode 60 while the charge generating layer 40 is disposed on Between the first light emitting unit 30 and the second light emitting unit 50.
  • the first light emitting unit 30 contains a sub-dot light emitting layer 33, and the second light emitting unit 50 includes an organic light emitting layer 53.
  • the energy band between the track having the highest energy level of the electrons and the track having the lowest energy level of the electrons is called the energy band.
  • the electrons start from the cathode, and the lowest orbit of the energy level that is not close to the energy level moves from the low energy band to the high energy band, and the holes are injected from the anode, and the energy barrier is low through the adjacent material.
  • the highest orbit of the energy level that has occupied the electrons moves from the high energy band to the low energy band.
  • the tandem quantum dot light emitting device 100 of the present invention thus realizes a pair of electrodes.
  • the purpose of simultaneously connecting the two kinds of diode light emitting devices of the first light emitting unit 30 and the second light emitting unit 50 is simultaneously.
  • the first light emitting unit 30 and the second light emitting unit 50 are both QLED devices.
  • the QLED device itself has a very narrow half-width, the wavelength is easy to control, and the color saturation exceeds 100% NTSC color gamut, but the device luminous efficiency is lower than that of the OLED.
  • the first electrode 20 and the second electrode 60 require one to provide a cathode and one to provide an anode.
  • the first electrode 20 is used to provide an anode, and the material may be a TCO transparent conductive oxide such as ITO indium tin oxide (Indium Tin Oxide) or IZO indium zinc oxide, which can be formed by magnetron sputtering.
  • the film thickness is between 20 nm and 200 nm; the second electrode 20 is for providing a cathode, and the material may be gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg), or the like or
  • the alloy can be formed by a vacuum evaporation method with a film thickness of between 50 nm and 1000 nm.
  • the first light emitting unit 30 if the structural active layer is in direct contact with the metal electrode, the film forming surface is uneven and the phenomenon of carrier transport is affected. For this reason, the first light emitting unit 30 is disposed close to The first electrode 20 is configured to connect the first light emitting unit 30 to the charge generating layer 40 to avoid the second electrode 20 as a cathode metal electrode, thereby effectively improving the light extraction efficiency of the device.
  • the charge generation layer 40 may be disposed to include an N-type charge generation layer 41 and a P-type charge generation layer 42 stacked.
  • the N-type charge generation layer 41 is an N-type electron transport material or an N-type dopant electron transport material, and the material of the N-type charge generation layer 41 is one of ZnO, TiO or BPhen: Cs2CO3, and evaporation can be used.
  • the film thickness is between 1 nm and 100 nm;
  • the P-type charge generating layer 42 is a P-type hole transporting material or a P-type doped hole transporting material, and the material of the P-type charge generating layer 42 is
  • One of neutral PEDOT, MoOx, WOx, C60 or HATCN can be prepared by vapor deposition film formation with a film thickness between 1 nm and 100 nm.
  • the N-type charge generation layer 41 and the P-type charge generation layer 42 may be made of the same material, so that the interface between the N-type charge generation layer 41 and the P-type charge generation layer 42 may be eliminated. This increases the lifetime of the tandem quantum dot light emitting device 100 of the present invention.
  • the N-type charge generation layer 41 and the P-type charge generation layer 42 may also be made of different materials, and have an advantage in the transfer efficiency of a carrier that transfers or moves electrons or holes.
  • the N-type charge generation layer 41 is configured to inject electrons into the first light-emitting layer 30, and thus the N-type charge generation layer 41 needs to be located on the side of the first electrode 20. Accordingly, the P-type charge generation layer 42 is configured to inject holes into the second light-emitting layer 40, and thus the P-type charge generation layer is located on the side close to the second electrode 60.
  • the first light emitting unit 30 further includes a hole injection layer 31, a hole transport layer 32, and an electron transport layer 34, and the quantum dot light emitting layer 33 is located at Between the hole transport layer 32 and the electron transport layer 34, the first electrode 20 and the N-type charge generation layer 41 respectively supply holes and electrons to the quantum dot light-emitting layer 33, the holes
  • the injection layer 31 promotes hole injection of the first electrode 20, and the hole transport layer 32 and the electron transport layer 34 respectively perform hole and electron transport operations.
  • the hole injection layer 31 may be selected from a material PEDT:PSS, that is, an aqueous dispersion of poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate), which is formed by an inkjet printing method. Between 1 nm and 100 nm.
  • the hole transport layer 32 may be selected from a material PVK, that is, a polyvinylcarbazole, which is also formed by an inkjet printing method with a film thickness of between 1 nm and 100 nm.
  • the quantum dot luminescent layer 33 can select a certain proportion of mixed CdZnSe and ZnS to form a quantum dot solution of a certain concentration, and add suitable additives to meet the requirements of the inkjet printing method, and finally form a film by inkjet printing, and the film thickness is Between 1 nm and 100 nm.
  • the electron transport layer 34 may be made of a ZnMgO material.
  • the second light emitting unit 50 further includes an electron injection layer 51, an electron transport layer 52, and a hole transport layer 54 in sequence, and the organic light emitting layer 53 is located at the electron Between the transport layer 52 and the hole transport layer 54, the P-type charge generation layer 42 and the second electrode 60 respectively supply holes and electrons to the organic light-emitting layer 53, and the electron injection layer 51 promotes The hole injection of the second electrode 60, the electron transport layer 52 and the hole transport layer 54 respectively perform electron and hole transport operations.
  • the material of the electron injecting layer 51 may be lithium fluoride (LiF), which is prepared by an evaporation film forming method, and has a film thickness of between 0.5 nm and 10 nm.
  • the material of the electron transport layer 52 may be 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, which is prepared by an evaporation film forming method, and the film thickness is between 1 nm and 100 nm. .
  • the organic light-emitting layer 53 may also be provided as a blue organic light-emitting layer to compensate for the problem that the blue light-emitting efficiency of the QLED display device is not high.
  • the material may be a PFO, which is prepared by an evaporation film forming method, and the film thickness is between 1 nm and 100 nm.
  • the material of the hole transport layer 54 may be NPB, which is prepared by an evaporation film formation method.
  • the present invention also relates to a display panel comprising the above-described series quantum dot light emitting device 100. Since the tandem quantum dot light-emitting device 100 simultaneously connects the OLED light-emitting device and the QLED light-emitting device in series, the quantum dot light-emitting device 100 has both advantages. It has a narrow half-width, easy regulation, high color saturation, and high light output efficiency. The display using the display panel of the present invention can also have extremely high color saturation and extremely high luminous efficiency at the same time.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种串联式量子点发光器件（100），涉及LCD显示器制造领域，利用层叠的P型电荷生成层（42）和N型电荷生成层（41），只通过一对电极就实现QLED器件结构与OLED器件结构的串联，两种二极管发光器件相互结合，取长补短，形成一个串联的具有窄半峰宽、高色彩饱和度、高出光效率的发光器件。

Description

串联量子点发光器件、面板即显示器 技术领域
本发明涉及显示器领域，尤其涉及一种串联的量子点发光器件。
背景技术
有机电致发光二极管(OLED)由于其具有自发光、反应快、视角广、亮度高、轻薄等优点，其潜在的市场前景被业界看好，已经被公认为是第三代显示技术的代表。而量子点发光二极管(QLED)由于其光色纯度高、发光量子效率高、发光颜色易调等优点，近年来成了OLED的有力竞争者。在平板显示领域，OLED和QLED是未来高端显示技术研究的热点。
具体而言，量子点发光材料具有出射光颜色饱和、波长可调、极窄半峰宽、电致发光效率很高且可以溶液制程、可用于柔性器件等优点，被认为是下一代显示技术的有力竞争者。然而虽然近年来量子点发光二极管发展速度迅猛，但是离日趋成熟可用于量产的OLED技术在效率和寿命上仍有极大差异。如何有效提高QLED器件的发光效率成为目前亟待解决的问题。
发明内容
本发明的目的在于使QLED器件拥有极高的色彩饱和度的同时也拥有极高的发光效率，因而提供一种杂化串联的QLED器件结构，具体包括如下技术方案：
一种串联量子点发光器件，各组件均为层叠设置，包括第一电极和第二电极；设置于所述第一电极和第二电极之间的第一发光单元和第二发光单元；设置于第一发光单元和第二发光单元之间的电荷生成层；所述第一发光单元包含量子点发光层，所述第二发光单元包含有机发光层。
其中，所述第一电极用于提供阳极，所述第二电极用于提供阴极。
其中，所述第一发光单元位于所述第一电极一侧。
其中，所述电荷生成层包括N型电荷生成层和P型电荷生成层。
其中，所述N型电荷生成层和所述P型电荷生成层由不同的材料形成。
其中，所述N型电荷生成层位于所述第一电极一侧。
其中，在靠近所述第一电极一侧，所述第一发光单元还依次包括空穴注入层、空穴传输层和电子传输层，所述量子点发光层位于所述空穴传输层和所述电子传输层之间。
其中，在靠近所述第二电极一侧，所述第二发光单元还依次包括电子注入层、电子传输层和空穴传输层，所述有机发光层位于所述电子传输层和所述空穴传输层之间。
其中，所述N型电荷产生层的材料为ZnO、TiO或BPhen：Cs2CO3中的一种；所述P型电荷产生层的材料为中性PEDOT、MoOx、WOx、C60或HATCN中的一种。
本发明还涉及一种显示面板，包含上述串联量子点发光器件。
本发明也同时涉及一种显示器，采用了上述显示面板。
本发明串联量子点发光器件，利用层叠的P型电荷生成层和N型电荷生成层，通过一对电极将QLED器件结构与OLED器件结构串联起来，将两种二极管发光器件相结合，互相取长补短，形成一个串联的具有窄半峰宽、高色彩饱和度、高出光效率的发光器件。
附图说明
图1是本发明串联量子点发光器件的示意图；
图2是本发明串联量子点发光器件的能带示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。
请参阅图1的串联量子点发光器件100，在TFT基板10上，依次层叠设置第一电极20、第一发光单元30、电荷生成层40、第二发光单元50和第二电极60。即所述第一发光单元30、所述电荷生成层40和所述第二发光单元50设置于所述第一电极20和所述第二电极60之间，同时所述电荷生成层40设置于所述第一发光单元30和所述第二发光单元50之间。所述第一发光单元30内含量子点发光层33，所述第二发光单元50包含有机发光层53。
出于所述第一发光单元30和所述第二发光单元50的工作特点，需要在所述第一发光单元30或所述第二发光单元50的两端形成相对的能带差(见图2)，对于有机材料来说，在已占有电子的能级最高的轨道与未占有电子的能级最低的轨道之间的能带范围称之为能带。在一定的电压驱动下，电子从阴极出发，通过能级差相近的未占有电子的能级最低轨道从低能带往高能带移动，空穴则从阳极注入，通过相邻材料能带势垒低的已占有电子的能级最高轨道从高能带往低能带移动，通过图2可以了解到，当所述第一电极20和所述第二电极60开始提供空穴和/或电子时，因为相对的能带差而产生空穴和/或电子的相向流动，最后在所述量子点发光层33或所述有机发光层53内产生结合，从而实现发光。
本发明因为所述电荷生成层40的引入，在所述第一电极20和所述第二电极60之间形成两组相对的能带差，分别供所述第一发光单元30和所述第二发光单元50实现发光。即所述第一发光单元30通过所述量子点发光层33发光，所述第二发光单元50通过所述有机发光层53发光，本发明所述串联量子点发光器件100因此实现了一对电极下同时串联所述第一发光单元30和所述第二发光单元50两种二极管发光器件的目的。第一发光单元30和所述第二发光单元50均为QLED器件。QLED器件本身有极窄的半峰宽，波长易调控，且色彩饱和度超过100％NTSC色域，但是器件发光效率相对OLED来说较低，通过在QLED器件上串联OLED电致发光结构，可以在保证半峰宽不会显著增加，色彩饱和度不会显著下降的同时，提升器件的出光效率，结合了两种电致发光器件的优点，使器件的出光效率得到极大提升。
可以理解的，所述第一电极20和所述第二电极60需要一个提供阴极，一个提供阳极。在本实施例中，所述第一电极20用于提供阳极，材料可以为ITO 氧化铟锡(Indium Tin Oxide)、IZO氧化铟锌等TCO透明导电氧化物，可以通过磁控溅射成膜，膜厚在20nm到200nm之间；所述第二电极20用于提供阴极，材料可以为金(Au)、银(Ag)、铝(Al)、钼(Mo)、镁(Mg)等或其合金，可以通过真空蒸镀方法成膜，膜厚在50nm到1000nm之间。
对于第一发光单元30来说，如果其结构活性层与金属极直接接触，会造成成膜面不均匀而影响载流子传输的现象，为此，所述第一发光单元30被设置于靠近所述第一电极20，从而使得所述第一发光单元30与所述电荷生成层40连接，避开作为阴极金属极的所述第二电极20，可以有效提高器件的出光效率。
对于所述电荷生成层40，可以设置为包括N型电荷生成层41和P型电荷生成层42叠加形成。所述N型电荷产生层41为N型电子传输材料或N型掺杂电子传输材料，所述N型电荷产生层41的材料为ZnO、TiO或BPhen：Cs2CO3中的一种，可以采用蒸镀成膜法制备，膜厚在1nm到100nm之间；所述P型电荷产生层42为P型空穴传输材料或P型掺杂空穴传输材料，所述P型电荷产生层42的材料为中性PEDOT、MoOx、WOx、C60或HATCN中的一种，可以采用蒸镀成膜法制备，膜厚在1nm到100nm之间。所述N型电荷生成层41和所述P型电荷生成层42可以由相同材料制成，这样可以消除所述N型电荷生成层41和所述P型电荷生成层42之间的界面，由此提高本发明所述串联量子点发光器件100的寿命。所述N型电荷生成层41和所述P型电荷生成层42也可以由不同材料制成，在转移或移动电子或空穴的载体的传送效率方面具有优势。
所述N型电荷生成层41被构造为向所述第一发光层30注入电子，因此所述N型电荷生成层41需要位于所述第一电极20一侧。相应的，所述P型电荷生成层42被构造为向所述第二发光层40注入空穴，因此所述P型电荷生成层位于靠近所述第二电极60一侧。
具体的，在靠近所述第一电极20一侧，所述第一发光单元30还依次包括空穴注入层31、空穴传输层32和电子传输层34，所述量子点发光层33位于所述空穴传输层32和所述电子传输层34之间，所述第一电极20和所述N型电荷生成层41分别向所述量子点发光层33提供空穴和电子，所述空穴注入层 31促进所述第一电极20的空穴注入，所述空穴传输层32和所述电子传输层34分别完成空穴和电子的传输动作。
所述空穴注入层31可以选择材料PEDT：PSS，即聚(3，4-乙烯基二氧噻吩)聚(苯乙烯磺酸盐)的水性分散体，通过喷墨打印法成膜，膜厚在1nm到100nm之间。所述空穴传输层32可以选择材料PVK，即聚乙烯基咔唑，也通过喷墨打印法成膜，膜厚在1nm到100nm之间。所述量子点发光层33可以选择一定比例混合的CdZnSe和ZnS形成一定浓度的量子点溶液，并加入合适的添加剂使其满足喷墨打印法的要求，最后通过喷墨打印成膜，膜厚在1nm到100nm之间。所述电子传输层34可以由ZnMgO材料制成。
具体的，在靠近所述第二电极60一侧，所述第二发光单元50还依次包括电子注入层51、电子传输层52和空穴传输层54，所述有机发光层53位于所述电子传输层52和所述空穴传输层54之间，所述P型电荷生成层42和所述第二电极60分别向所述有机发光层53提供空穴和电子，所述电子注入层51促进所述第二电极60的空穴注入，所述电子传输层52和所述空穴传输层54分别完成电子和空穴的传输动作。
所述电子注入层51材料可以为氟化锂(LiF)，采用蒸镀成膜法制备，膜厚在0.5nm到10nm之间。所述电子传输层52材料可以为1，3，5-三(1-苯基-1H-苯并咪唑-2-基)苯，采用蒸镀成膜法制备，膜厚在1nm到100nm之间。所述有机发光层53还可以设置为蓝光有机发光层，以弥补QLED显示器件的蓝光发光效率不高问题，材料可以为PFO，采用蒸镀成膜法制备，膜厚在1nm到100nm之间。所述空穴传输层54的材料可以为NPB，采用蒸镀成膜法制备。
本发明还涉及一种显示面板，包含上述串联量子点发光器件100。因为所述串联量子点发光器件100同时串联了OLED发光器件和QLED发光器件，因而本量子点发光器件100兼具了二者的优点。既具有窄半峰宽、易于调控、高色彩饱和度，又具备了较高的出光效率。采用本发明显示面板的显示器，也可以因此同时拥有极高的色彩饱和度和极高的发光效率。
以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。

Claims (17)

  1. 一种串联量子点发光器件，其中，包括依次层叠设置的第一电极、第一发光单元、电荷生成层、第二发光单元及第二电极，所述第一发光单元包含量子点发光层，所述第二发光单元包含有机发光层；所述电荷生成层用于为所述第一发光单元和所述第二发光单元提供空穴和/或电子，以实现所述第一发光单元和所述第二发光单元的串联。
  2. 如权利要求1所述串联量子点发光器件，其中，所述电荷生成层包括层叠设置的N型电荷生成层和P型电荷生成层。
  3. 如权利要求2所述串联量子点发光器件，其中，所述N型电荷生成层位于所述P型电荷生成层和所述第一发光单元之间。
  4. 如权利要求3所述串联量子点发光器件，其中，所述N型电荷生成层和所述P型电荷生成层由不同的材料形成。
  5. 如权利要求4所述串联量子点发光器件，其中，所述第一电极用于提供阳极，所述第二电极用于提供阴极。
  6. 如权利要求5所述串联量子点发光器件，其中，所述第一发光单元包括依次层叠的空穴注入层、空穴传输层和电子传输层，所述量子点发光层位于所述空穴传输层和所述电子传输层之间，所述空穴注入层位于所述第一电极和所述空穴传输层之间。
  7. 如权利要求5所述串联量子点发光器件，其中，所述第二发光单元还依次包括层叠的电子注入层、电子传输层和空穴传输层，所述有机发光层位于所述电子传输层和所述空穴传输层之间，所述电子注入层位于所述第二电极和所述电子传输层之间。
  8. 如权利要求4所述串联量子点发光器件，其中，所述N型电荷产生层的材料为ZnO、TiO或BPhen：Cs2CO3中的一种；所述P型电荷产生层的材料为中性PEDOT、MoOx、WOx、C60或HATCN中的一种。
  9. 一种显示面板，其中，包含权利1所述串联量子点发光器件，所述串联量子点发光器件包括依次层叠设置的第一电极、第一发光单元、电荷生成层、第二发光单元及第二电极，所述第一发光单元包含量子点发光层，所述第二发 光单元包含有机发光层；所述电荷生成层用于为所述第一发光单元和所述第二发光单元提供空穴和/或电子，以实现所述第一发光单元和所述第二发光单元的串联。
  10. 如权利要求9所述显示面板，其中，所述电荷生成层包括层叠设置的N型电荷生成层和P型电荷生成层。
  11. 如权利要求10所述显示面板，其中，所述N型电荷生成层位于所述P型电荷生成层和所述第一发光单元之间。
  12. 如权利要求11所述显示面板，其中，所述N型电荷生成层和所述P型电荷生成层由不同的材料形成。
  13. 如权利要求12所述显示面板，其中，所述第一电极用于提供阳极，所述第二电极用于提供阴极。
  14. 如权利要求13所述显示面板，其中，所述第一发光单元包括依次层叠的空穴注入层、空穴传输层和电子传输层，所述量子点发光层位于所述空穴传输层和所述电子传输层之间，所述空穴注入层位于所述第一电极和所述空穴传输层之间。
  15. 如权利要求13所述显示面板，其中，所述第二发光单元还依次包括层叠的电子注入层、电子传输层和空穴传输层，所述有机发光层位于所述电子传输层和所述空穴传输层之间，所述电子注入层位于所述第二电极和所述电子传输层之间。
  16. 如权利要求12所述显示面板，其中，所述N型电荷产生层的材料为ZnO、TiO或BPhen：Cs2CO3中的一种；所述P型电荷产生层的材料为中性PEDOT、MoOx、WOx、C60或HATCN中的一种。
  17. 一种显示器，其中，包含权利9所述显示面板，包括所述串联量子点发光器件，所述串联量子点发光器件包括依次层叠设置的第一电极、第一发光单元、电荷生成层、第二发光单元及第二电极，所述第一发光单元包含量子点发光层，所述第二发光单元包含有机发光层；所述电荷生成层用于为所述第一发光单元和所述第二发光单元提供空穴和/或电子，以实现所述第一发光单元和所述第二发光单元的串联。
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