WO2019092879A1 - プラズマ処理装置およびプラズマ処理方法 - Google Patents
プラズマ処理装置およびプラズマ処理方法 Download PDFInfo
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- WO2019092879A1 WO2019092879A1 PCT/JP2017/040725 JP2017040725W WO2019092879A1 WO 2019092879 A1 WO2019092879 A1 WO 2019092879A1 JP 2017040725 W JP2017040725 W JP 2017040725W WO 2019092879 A1 WO2019092879 A1 WO 2019092879A1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- H01J37/3452—Magnet distribution
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
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- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1475—Scanning means magnetic
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
- H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
Definitions
- the present invention relates to a plasma processing apparatus and a plasma processing method.
- a plasma processing apparatus that transports the plasma generated in the plasma generation unit to a processing chamber and processes the substrate with the plasma in the processing chamber.
- a plasma processing apparatus can be applied, for example, as a deposition apparatus for forming a film on a substrate and an ion implantation apparatus for implanting ions on a substrate.
- a vacuum arc film forming apparatus is provided in which plasma generated by vacuum arc discharge between a cathode target and an anode is transported to a processing chamber in a plasma generating unit to form a film on a substrate in the processing chamber. be able to.
- the vacuum arc deposition apparatus is useful, for example, for forming a ta-C (tetrahedral amorphous carbon) film as a surface protection film of a magnetic recording medium of a hard disk drive.
- the vacuum arc film forming apparatus is useful for forming a hard film containing a metal element such as Ti or Cr on the surface of a machine part or a cutting tool.
- Patent Document 1 discloses a plasma flow generation method which generates an arc plasma between a cathode and an anode by arc discharge and generates a plasma flow rotated around a plasma traveling direction by a rotating magnetic field.
- the plasma rotation angle area around the plasma traveling direction is divided into two or more, and the rotation speed of plasma in each rotation angle area is made different.
- Patent No. 5606777 gazette
- the plasma flow drifts due to a factor such as a bias in the strength of the rotating magnetic field for rotating the plasma, and the center of the rotation or trajectory of the plasma flow may be offset from the center of the substrate. There is sex. In this case, it becomes difficult to process the substrate uniformly, for example, to form a film of uniform thickness on the substrate.
- the present invention aims to provide an advantageous technique for uniformly processing a substrate.
- One aspect of the present invention relates to a plasma processing apparatus, and the plasma processing apparatus includes a processing chamber for processing a substrate, a plasma generation unit for generating plasma, and a plasma generated by the plasma generation unit in the processing chamber. And a scanning magnetic field generating unit for generating a magnetic field for deflecting the plasma such that the substrate is scanned by the plasma, wherein the scanning magnetic field generating unit adjusts the center of the locus of the plasma. It is configured to be possible.
- an advantageous technique is provided to uniformly process a substrate.
- FIG. 2 is a schematic view of a carrier used in the vacuum processing apparatus shown in FIG. 1;
- BRIEF DESCRIPTION OF THE DRAWINGS The schematic diagram which shows the structure of the plasma processing apparatus of one Embodiment of this invention.
- FIG. 5 is a schematic view showing a first magnetic field generation unit of a scanning magnetic field generation unit of the plasma processing apparatus shown in FIG. 3;
- FIG. 5 is a schematic view showing a second magnetic field generation unit of a scanning magnetic field generation unit of the plasma processing apparatus shown in FIG. 3;
- FIG. 4 is a diagram showing the configuration of a power supply system of the plasma processing apparatus shown in FIG.
- FIG. 6 is a view exemplifying a waveform of a first current supplied to a first magnetic field generation unit of a scanning magnetic field generation unit. The figure which illustrates the waveform of the 2nd electric current supplied to the 2nd magnetic field generation part of a scanning magnetic field generation part.
- FIG. 5 is a view showing an example of a scanning magnetic field generated by a scanning magnetic field generation unit.
- FIG. 7 is a view showing another example of the scanning magnetic field generated by the scanning magnetic field generation unit.
- FIG. 6 is a view exemplifying a waveform of a first current supplied to a first magnetic field generation unit of a scanning magnetic field generation unit.
- FIG. 5 is a view showing an example of a scanning magnetic field generated by a scanning magnetic field generation unit.
- FIG. 1 schematically shows the configuration of a vacuum processing apparatus VP according to an embodiment of the present invention.
- the vacuum processing apparatus VP can be configured as an in-line type film forming apparatus.
- the vacuum processing apparatus VP has a configuration in which a plurality of processing chambers 111 to 131 are connected in a rectangular endless shape via gate valves.
- the processing chambers 111 to 131 are vacuum containers evacuated by a dedicated or shared exhaust system.
- a transport device CNV see FIG. 3 for transporting the carrier 10 holding the substrate 1 is incorporated.
- the transport device CNV has a transport path that transports the carrier 10 in a posture in which the main surface of the substrate 1 held thereby is maintained perpendicular to the horizontal plane.
- the processing chamber 111 is a load lock chamber for performing processing of attaching the substrate 1 to the carrier 10.
- the processing chamber 116 is an unload lock chamber for performing processing of removing the substrate 1 from the carrier 10.
- the substrate 1 is, for example, one suitable for use as a magnetic recording medium, and may be, for example, a metal or glass disk-like member having an opening (inner circumferential hole) in the central portion.
- the shape and material of the substrate 1 are not limited to specific ones.
- a substrate processing procedure in the vacuum processing apparatus VP will be described.
- the first substrate 1 is attached to the first carrier 10 in the processing chamber (load lock chamber) 111.
- the first carrier 10 moves to the processing chamber (adhesion layer forming chamber) 117, and the adhesion layer is formed on the first substrate 1.
- the second substrate 1 is attached to the second carrier 10.
- the second carrier 10 moves to the processing chamber (adhesion layer forming chamber) 117, an adhesion layer is formed on the second substrate 1, and the third carrier 10 is transferred to the third carrier 10 in the processing chamber (load lock chamber) 111. 1 is attached.
- each carrier 10 performs processing on the substrate 1 while moving the processing chambers 117 to 131 one by one.
- the processing chambers 117 to 131 are processing chambers for processing the substrate 1.
- the processing chambers 117 to 128 may be, for example, processing chambers of a film forming apparatus for forming a film such as an adhesion layer, a soft magnetic layer, a seed layer, an intermediate layer, and a magnetic layer.
- the processing chamber 129 can be, for example, a processing chamber of a plasma processing apparatus that forms a surface protection layer made of a ta-C film.
- the processing chamber 130 may be, for example, a chamber of a processing apparatus that processes the surface of the ta-C film formed in the processing chamber 129.
- the processing chambers 112 to 115 are processing chambers provided with a direction changing device that changes the transport direction of the substrate 1 by 90 degrees.
- the processing chamber 131 is an ashing processing chamber that removes deposits attached to the carrier 10.
- the vacuum processing apparatus VP for example, a structure in which an adhesion layer, a lower soft magnetic layer, a seed layer, an intermediate layer, a magnetic recording layer, and a ta-C film are sequentially formed on the substrate 1 can be obtained.
- the carrier 10 can hold, for example, two substrates 1 simultaneously.
- the carrier 10 may include, for example, two metal holders 201 for holding the substrate 1 respectively, and a slider 202 for supporting the two holders 201 and moving on the transport path.
- the slider 202 is provided with a permanent magnet 204 for the transport device CNV to drive the slider 202.
- the holder 201 grips several places on the outer peripheral portion of the substrate 1 with a plurality of conductive elastic members (leaf springs) 203 without covering the film formation regions on the front and back of the substrate 1.
- FIG. 3 schematically shows the configuration of the plasma processing apparatus 300 having the processing chamber 129 and the configuration of the transfer apparatus CNV.
- the transport device CNV includes a large number of driven rollers (not shown) aligned along the transport path, and a magnetic screw 303 for driving the carrier 10.
- the slider 202 (carrier 10) By driving the magnetic screw 303 to rotate, the slider 202 (carrier 10) provided with the permanent magnet 204 is driven along the transport path.
- a voltage is applied to the substrate 1 held by the holder 201 of the carrier 10 by the power supply 302 via the conductive elastic member 203.
- the substrate 1 held by the holder 201 can be grounded via the conductive elastic member 203.
- a direct current voltage, a pulse voltage or a high frequency voltage may be applied to the holder 201.
- the plasma processing apparatus 300 may be configured to form a ta-C film on the substrate 1 by vacuum arc deposition, for example, but this is merely an example.
- the plasma processing apparatus 300 may generate plasma in other manners.
- the plasma processing apparatus 300 includes a processing chamber 129 for processing a substrate, a plasma generation unit 320 for generating plasma, a transport unit 310 for transporting plasma generated by the plasma generation unit 320 to the processing chamber 129, and the substrate 1 by plasma.
- a scanning magnetic field generation unit 360 may be provided which generates a magnetic field for rotating or deflecting the plasma to be scanned, and a vacuum pump 301 such as a turbo molecular pump for exhausting the processing chamber 129.
- the processing chamber 129 constitutes a film forming chamber for forming a ta-C film on the substrate 1.
- the transport unit 310 may include a transport pipe 311 and a transport magnetic field generator 312 disposed to surround the transport pipe 311.
- the transport pipe 311 may be a two-dimensionally curved single bend type transport pipe as schematically shown in FIG. 3, but is a linear, double bend, or three dimensionally curved transport pipe. May be
- the transport magnetic field generation unit 312 may include a magnetic field generation unit disposed on the inner side (vacuum side) of the transport tube 311.
- the transport magnetic field generation unit 312 may include a transport magnetic field generation coil.
- the transport magnetic field generation unit 312 forms a magnetic field for transporting plasma (electrons and ions) in the transport tube 311.
- a plurality of baffles may be disposed in the transport pipe 311.
- the scanning magnetic field generation unit 360 functions as a deflector that scans the substrate 1 by the plasma by deflecting the plasma supplied from the transport unit 310 to the processing chamber 129. More specifically, the scanning magnetic field generation unit 360 generates a magnetic field for rotating or deflecting the plasma so that the substrate 1 is scanned by the plasma supplied from the transport unit 310 to the processing chamber 129. This scan can be made to supply carbon ions uniformly to the film formation region of the substrate 1.
- the plasma generation unit 320 generates plasma by vacuum arc discharge, but may generate plasma by other methods.
- the plasma generator 320 may include a cathode target 340, an anode 330, a movable anode 331, and a stabilization coil 350.
- the cathode target 340 is a graphite target for forming a ta-C film, but the cathode target 340 is a material corresponding to the film to be formed on the substrate 1 (for example, titanium nitride, titanium oxide, nitrided And chromium, chromium oxide, aluminum nitride, aluminum oxide, zinc nitride, zinc oxide, copper nitride or copper oxide).
- the anode 330 may have, for example, a cylindrical shape, but the shape of the anode 330 is not particularly limited as long as it does not interrupt the transport of electrons and carbon ions to the transport portion 310.
- the anode 330 may be made of a graphite material, but the material of the anode 330 may be a material that does not melt in the plasma generated by the arc discharge and has conductivity.
- the movable anode 331 is an electrode for inducing an arc discharge between the cathode target 340 and the anode 330.
- the movable anode 331 retracted outside the anode 330 is driven toward the cathode target 340 and brought into mechanical contact with the cathode target 340, and the movable anode is caused to flow arc current from the movable anode 331 to the cathode target 340.
- the arc discharge can be generated by separating 331 from the cathode target 340. And, by maintaining the electron current or the ion current between the anode 330 and the cathode target 340, arc discharge can be maintained.
- the arc discharge emits carbon ions and electrons from the cathode target 340 to generate a plasma containing carbon ions and electrons.
- the stabilization coil 350 is disposed on the opposite side of the discharge surface side (the transport portion 310 side) of the cathode target 340, and forms a magnetic field for stabilizing the arc discharge.
- the magnetic field generated by the stabilization coil 350 and the transport magnetic field generated by the transport magnetic field generation unit 312 become cusp magnetic fields (opposite directions).
- the cusp magnetic field can control the behavior of the arc spot, secure a low load current path between the cathode target 340 and the anode 330, and stabilize the arc discharge.
- a permanent magnet may be provided.
- the plasma containing carbon ions generated by the arc discharge is transported to the processing chamber 129 along the transport magnetic field in the transport section 310, and a ta-C film is formed on the substrate 1 disposed in the processing chamber 129.
- the reactive gas of an inert gas such as argon and / or a nitrogen gas may be supplied to the plasma generation unit 320 as a process gas.
- the scanning magnetic field generation unit 360 generates a first magnetic field generation unit 360 x generating a first magnetic field Hx parallel to the first direction (in this example, the X-axis direction), and a second direction (in this example) intersecting the first direction. And a second magnetic field generation unit 360y that generates a second magnetic field Hy parallel to the Y axis direction).
- the first magnetic field generator 360x may include a first yoke 361x and a first coil 362x wound around the first yoke 361x.
- the second magnetic field generation unit 360y may include a second yoke 361y and a second coil 362y wound around the second yoke 361y.
- the first direction and the second direction may be orthogonal to each other.
- a combined magnetic field H is formed as a scanning magnetic field by the first magnetic field Hx and the second magnetic field Hy.
- the scanning magnetic field generation unit 360 generates the first magnetic field Hx and the second magnetic field Hy so that the combined magnetic field H rotates (as the vector indicating the combined magnetic field H rotates).
- the scanning magnetic field generation unit 360 supplies, as a first current, a current obtained by superimposing the first DC component on the first sine wave as a first current to a first magnetic field generation unit 360 x (a first coil 362 x thereof);
- a second power source 450y may be provided to supply (as a second coil 362y of) a second magnetic field generation unit 360y with a current obtained by superimposing the second direct current component on the second sine wave as a second current.
- the scanning magnetic field generator 360 may be configured to be able to adjust the rotation of the plasma or the center of the trajectory of the plasma.
- the power supply system 390 may include a controller 400, an arc power supply 410, a transport power supply 420, a stabilization coil power supply 430, a function generator 440, a first power supply 450x, and a second power supply 450y.
- Arc power supply 410 supplies current to cathode target 340.
- the transport power supply 420 supplies a current to the transport magnetic field generator 312.
- Stabilizing coil power supply 430 supplies current to stabilizing coil 350.
- the function generator 440 supplies the first and second signal waveforms pre-programmed to the first power supply 450x and the second power supply 450y, respectively.
- the first power supply 450x and the second power supply 450y have a first signal waveform supplied from the function generator 440, a first current having a waveform according to the second signal waveform, and a second current respectively generated by the first magnetic field generation unit 360x and the second current. It supplies to 2 magnetic field generation part 360y.
- the first power supply 450x and the second power supply 450y may be bipolar power supplies.
- the first power supply 450x supplies a current Axsin (2 ⁇ ft + ⁇ x) + Bx obtained by superimposing the first DC component Bx on the first sine wave Axsin (2 ⁇ ft + ⁇ x) as a first current to the first magnetic field generation unit 360x.
- the second power supply 450y supplies a current Aysin (2 ⁇ ft + ⁇ y) + By obtained by superimposing the second direct current component By on the second sine wave Aysin (2 ⁇ ft + ⁇ y) as a second current to the second magnetic field generation unit 360y.
- the first sine wave Ax sin (2 ⁇ ft + ⁇ x) and the second sine wave Aysin (2 ⁇ ft + ⁇ y) can be set by the function generator 440.
- the first DC component Bx and the second DC component By can be set by the function generator 440.
- Ax and Ay are amplitudes
- f is frequency
- ⁇ x and ⁇ y are phases.
- a combined magnetic field (scanning magnetic field) H of the first magnetic field Hx generated by the first magnetic field generator 360x and the second magnetic field Hy generated by the second magnetic field generator 360y is a magnetic field whose direction rotates at a constant cycle.
- the plasma scanning over the substrate 1 is also rotated over the substrate 1 at a constant cycle by the magnetic field H.
- the first DC component Bx and the second DC component By adjusting the first DC component Bx and the second DC component By, it is possible to adjust the position of the center of rotation of the vector of the combined magnetic field H (the center of the vector locus of the combined magnetic field H (Lissajous figure)). That is, by adjusting the first direct current component Bx and the second direct current component By, it is possible to adjust the center of the rotation or trajectory of the plasma scanning on the substrate 1.
- Ax Ay
- ⁇ y ⁇ x + (1/2 + n) ⁇ (n is a natural number).
- AxAAy and / or ⁇ y ⁇ ⁇ x + (1/2 + n) ⁇ may be set.
- the plasma generated by the arc discharge in the plasma generation unit 320 is transported by the transport unit 310 to the substrate 1 in the processing chamber 129.
- the strength of the magnetic field formed in the transport pipe 311 by the transport magnetic field generation unit 312 may have a distribution that weakens in the vicinity of the center of the transport pipe 311 and becomes stronger toward the pipe wall of the transport pipe 311.
- the plasma may drift.
- the drift of the substrate 1 may be offset from the center of the rotation or trajectory of the plasma, with such drift as one factor.
- the density of the plasma transported from the plasma generation unit 320 to the substrate 1 by the transport unit 310 has a bias.
- the thickness distribution of the film formed by the plasma scanned by the deflecting magnetic field formed only by the sinusoidal current can be non-uniform.
- the plasma is scanned by the magnetic field formed by the first current in which the first DC component is superimposed on the first sine wave and the second current in which the second DC component is superimposed on the second sine wave.
- the center of rotation or trajectory of the plasma can be adjusted.
- the center of the rotation or trajectory of the plasma can be aligned with or close to the center of the substrate. Therefore, the thickness distribution of the film formed on the substrate can be uniformly adjusted.
- the thickness distribution of the film formed on the substrate can be arbitrarily adjusted by arbitrarily adjusting the position of the center of rotation or trajectory of the plasma.
- the scanning magnetic field generation unit 360 may be configured by movable permanent magnets.
- the transport is performed by controlling the distance between the first permanent magnet generating the magnetic field in the first direction and the transport pipe 311, and the distance between the second permanent magnet generating the magnetic field in the second direction and the transport pipe 311.
- the resultant magnetic field in tube 311 can be controlled.
- the first power supply 450x uses the current Ax sin (2 ⁇ ft + ⁇ x) + Bxc in which the fixed first direct current component Bxc is superimposed on the first sine wave Axsin (2 ⁇ ft + ⁇ x) as the first current to generate the first magnetic field generator Supply to 360x.
- the second power source 450y uses the current Aysin (2 ⁇ ft + ⁇ y) + Bic, which is a combination of the second sine wave Aysin (2 ⁇ ft + ⁇ y) and the fixed second direct current component Byc, as the second current. Supply to the generation unit 360y.
- Bxc and Byc are set or adjusted according to the position of the center of rotation or trajectory of the target plasma.
- the first power supply 450x uses a current Ax sin (2 ⁇ ft + ⁇ x) + Bx (t) as a first current in which the first direct current component Bx (t) is superimposed on the first sine wave Axsin (2 ⁇ ft + ⁇ x). 1 Supply to the magnetic field generator 360x.
- the second power supply 450y generates a current Aysin (2 ⁇ ft + ⁇ y) + By (t) in which the fixed second direct current component By (t) is superimposed on the second sine wave Aysin (2 ⁇ ft + ⁇ y). It supplies to 2nd magnetic field generation part 360y as 2 electric current.
- Bx (t) may be a direct current component and may be a first periodic signal having the same period as the first sine wave Ax sin (2 ⁇ ft + ⁇ x).
- By (t) may be a second periodic signal that is a direct current component and has the same period as the second sine wave Aysin (2 ⁇ ft + ⁇ y).
- Bx (t), By (t) are set in accordance with the target position of the center of rotation or trajectory of plasma.
- One period of the first periodic signal may include at least one first period having a first current value and at least one second period having a second current value different from the first current value.
- One period of the second periodic signal may include at least one third period having a third current value and at least one fourth period having a fourth current value different from the third current value.
- FIG. 9 shows an example of the locus of the vector of the synthetic magnetic field H (Lissajous figure).
- the locus of the vector of the combined magnetic field H is controlled to an arbitrary shape, and thereby the locus of the plasma is arbitrary. (For example, it can control to polygons, such as a square). Therefore, for example, the locus of the vector of the synthetic magnetic field H may be determined in accordance with the shape of the substrate or the target film thickness distribution.
- the vacuum processing apparatus VP is suitable for manufacturing a magnetic recording medium.
- the third embodiment of the present invention relates to a method of manufacturing a magnetic recording medium, which comprises forming an adhesion layer, a lower soft magnetic layer, a seed layer, an intermediate layer, a magnetic recording layer, and a ta-C on a substrate 1.
- the process of forming the ta-C film including the process of forming the film is performed in the plasma processing apparatus 300 having the process chamber 129.
- VP vacuum processing apparatus
- 300 plasma processing apparatus
- 129 processing chamber
- 1 substrate
- 10 carrier
- 340 cathode target
- 330 anode anode
- 331 movable anode
- 312 transport magnetic field generator
- 350 stable
- 400 control unit
- 410 arc power supply
- 420 transport power supply
- 440 function generator
- 450x bipolar power supply
- 450y bipolar power supply
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Abstract
Description
図6Aに示されるように、第1電源450xは、第1正弦波Axsin(2πft+αx)に固定の第1直流成分Bxcを重畳させた電流Axsin(2πft+αx)+Bxcを第1電流として第1磁場発生部360xに供給する。また、図6Bに示されるように、第2電源450yは、第2正弦波Aysin(2πft+αy)に固定の第2直流成分Bycを重畳させた電流Aysin(2πft+αy)+Bycを第2電流として第2磁場発生部360yに供給する。Bxc、Bycは、目標とするプラズマの回転あるいは軌跡の中心の位置に応じて設定あるいは調整される。
図8Aに示されるように、第1電源450xは、第1正弦波Axsin(2πft+αx)に第1直流成分Bx(t)を重畳させた電流Axsin(2πft+αx)+Bx(t)を第1電流として第1磁場発生部360xに供給する。また、図8Bに示されるように、第2電源450yは、第2正弦波Aysin(2πft+αy)に固定の第2直流成分By(t)を重畳させた電流Aysin(2πft+αy)+By(t)を第2電流として第2磁場発生部360yに供給する。Bx(t)は、直流成分であり、かつ、第1正弦波Axsin(2πft+αx)と同一の周期を有する第1周期信号でありうる。By(t)は、直流成分であり、かつ、第2正弦波Aysin(2πft+αy)と同一の周期を有する第2周期信号でありうる。Bx(t)、By(t)は、プラズマの回転あるいは軌跡の中心の目標位置に応じて設定される。第1周期信号の1周期は、第1電流値を有する少なくとも1つの第1期間と、該第1電流値とは異なる第2電流値を有する少なくとも1つの第2期間とを含みうる。第2周期信号の1周期は、第3電流値を有する少なくとも1つの第3期間と、該第3電流値とは異なる第4電流値を有する少なくとも1つの第4期間とを含みうる。図9には、合成磁界Hのベクトルの軌跡(リサージュ図形)の一例である。
真空処理装置VPは、磁気記録媒体の製造に好適である。本発明の第3実施形態は、磁気記録媒体の製造方法に係り、該製造方法は、基板1の上に、密着層、下部軟磁性層、シード層、中間層、磁気記録層およびta-C膜をそれぞれ形成する工程を含み、ta-C膜を形成する工程は、処理室129を有するプラズマ処理装置300においてなされる。
Claims (12)
- 基板を処理する処理室と、
プラズマを発生するプラズマ発生部と、
前記プラズマ発生部で発生したプラズマを前記処理室に輸送する輸送部と、
前記プラズマによって前記基板が走査されるように前記プラズマを偏向させる磁場を発生する走査磁場発生部と、を備え、
前記走査磁場発生部は、前記プラズマの軌跡の中心を調整可能に構成されている、
ことを特徴とするプラズマ処理装置。 - 前記走査磁場発生部は、第1方向に平行な第1磁場を発生する第1磁場発生部と、前記第1方向に交差する第2方向に平行な第2磁場を発生する第2磁場発生部と、前記第1磁場発生部に第1電流を供給する第1電源と、前記第2磁場発生部に第2電流を供給する第2電源と、を含み、
前記第1電源は、第1正弦波に第1直流成分を重畳させた電流を前記第1電流として前記第1磁場発生部に供給し、前記第2電源は、第2正弦波に第2直流成分を重畳させた電流を前記第2電流として前記第2磁場発生部に供給し、前記第1直流成分および前記第2直流成分が調整可能である、
ことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記基板を処理する期間において前記第1直流成分および前記第2直流成分がそれぞれ一定である、
ことを特徴とする請求項2に記載のプラズマ処理装置。 - 前記第1直流成分は、前記第1正弦波と同一の周期を有する第1周期信号であり、前記第2直流成分は、前記第2正弦波と同一の周期を有する第2周期信号である、
ことを特徴とする請求項2に記載のプラズマ処理装置。 - 前記第1周期信号の1周期は、第1電流値を有する少なくとも1つの第1期間と、前記第1電流値とは異なる第2電流値を有する少なくとも1つの第2期間とを含み、
前記第2周期信号の1周期は、第3電流値を有する少なくとも1つの第3期間と、前記第3電流値とは異なる第4電流値を有する少なくとも1つの第4期間とを含む、
ことを特徴とする請求項4に記載のプラズマ処理装置。 - 前記第1電源および前記第2電源は、それぞれバイポーラ電源を含み、
前記走査磁場発生部は、前記第1電源および前記第2電源のそれぞれの前記バイポーラ電源に信号波形を供給するファンクションジェネレータを更に含む、
ことを特徴とする請求項2乃至5のいずれか1項に記載のプラズマ処理装置。 - 前記プラズマ発生部は、真空アーク放電によってプラズマを発生する、
ことを特徴とする請求項1乃至6のいずれか1項に記載のプラズマ処理装置。 - プラズマ発生部で発生したプラズマを処理室に輸送し前記処理室において前記プラズマによって基板を処理するプラズマ処理方法であって、
前記処理室に輸送された前記プラズマによって前記基板が走査されるように前記プラズマを偏向させる磁場を発生する工程を含み、
前記工程では、前記プラズマの軌跡の中心が調整される、
ことを特徴とするプラズマ処理方法。 - 前記工程では、第1方向に平行な第1磁場を発生する第1磁場発生部に対して、第1正弦波に第1直流成分を重畳させた第1電流を供給し、前記第1方向に交差する第2方向に平行な第2磁場を発生する第2磁場発生部に対して、第2正弦波に第2直流成分を重畳させた第2電流を供給する、
ことを特徴とする請求項8に記載のプラズマ処理方法。 - 前記基板を処理する期間において前記第1直流成分および前記第2直流成分がそれぞれ一定である、
ことを特徴とする請求項9に記載のプラズマ処理方法。 - 前記第1直流成分は、前記第1正弦波と同一の周期を有する第1周期信号であり、前記第2直流成分は、前記第2正弦波と同一の周期を有する第2周期信号である、
ことを特徴とする請求項10に記載のプラズマ処理方法。 - 前記第1周期信号の1周期は、第1電流値を有する少なくとも1つの第1期間と、前記第1電流値とは異なる第2電流値を有する少なくとも1つの第2期間とを含み、
前記第2周期信号の1周期は、第3電流値を有する少なくとも1つの第3期間と、前記第3電流値とは異なる第4電流値を有する少なくとも1つの第4期間とを含む、
ことを特徴とする請求項11に記載のプラズマ処理方法。
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