WO2019075853A1 - 柔性oled面板的封装方法及封装结构 - Google Patents

柔性oled面板的封装方法及封装结构 Download PDF

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WO2019075853A1
WO2019075853A1 PCT/CN2017/113006 CN2017113006W WO2019075853A1 WO 2019075853 A1 WO2019075853 A1 WO 2019075853A1 CN 2017113006 W CN2017113006 W CN 2017113006W WO 2019075853 A1 WO2019075853 A1 WO 2019075853A1
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layer
inorganic barrier
barrier layer
liquid metal
tft substrate
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French (fr)
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杨中国
李金川
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a packaging method and a package structure of a flexible OLED panel.
  • OLED Organic Light Emitting Display
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display.
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor (TFT) matrix addressing. class.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • TFT thin film transistor
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • OLED display technology is different from traditional liquid crystal display technology. It does not require a backlight. It uses a very thin coating of organic materials and a glass substrate. When there is current, these organic materials will emit light. However, since organic materials are easily reacted with water vapor or oxygen, as an organic material-based display device, the OLED display has a very high requirement for packaging, and therefore, the sealing of the inside of the device is improved by the packaging of the OLED device, and the external environment is isolated as much as possible. It is essential for stable illumination of OLED devices.
  • the package of the OLED device is mainly packaged on a rigid package substrate (such as glass or metal), but the method is not suitable for the flexible device. Therefore, there is also a technical solution for packaging the OLED device by the laminated film.
  • the thin film encapsulation method generally forms two barrier layers with high water and gas barrier properties of inorganic materials on the OLED device on the substrate, and forms a layer of organic material with good flexibility between the two barrier layers. Buffer layer.
  • the barrier layer is used to block external water oxygen, and the buffer layer functions to release stress between adjacent barrier layers, so that the package structure can be applied to a flexible device.
  • the buffer layer made of an organic material has insufficient structure. Dense, can not significantly hinder the effect of water and oxygen, so that the overall water and oxygen barrier performance of the package structure is limited.
  • a binary eutectic alloy composed of indium and gallium is similar in density to a solid metal, has good water and oxygen barrier properties, and is a liquid metal that can flow at normal temperature.
  • the oxygen in the air reacts with the binary eutectic alloy composed of indium and gallium at room temperature, and gradually hardens on the surface of the material to form an oxide film.
  • the oxide film is very dense and has excellent water and oxygen barrier properties. It also prevents the interior of the material from being oxidized, so the interior remains liquid and remains flexible.
  • An object of the present invention is to provide a packaging method for a flexible OLED panel, which can improve the water-oxygen barrier property and flexibility of the package structure, and improve the packaging effect of the flexible OLED panel.
  • Another object of the present invention is to provide a package structure of a flexible OLED panel, which has high water and oxygen barrier properties and flexibility, and improves the packaging effect of the flexible OLED panel.
  • the present invention first provides a method for packaging a flexible OLED panel, comprising the following steps:
  • Step S1 providing a TFT substrate, and fabricating an OLED device on the TFT substrate;
  • Step S2 forming a first inorganic barrier layer covering the OLED device on the TFT substrate;
  • Step S3 forming a liquid metal layer on the first inorganic barrier layer
  • Step S4 oxidizing the liquid metal layer with oxygen to form a liquid metal oxide film on the surface of the liquid metal layer;
  • Step S5 forming an organic buffer layer covering the liquid metal oxide film on the first inorganic barrier layer
  • Step S6 forming a second inorganic barrier layer covering the organic buffer layer on the first inorganic barrier layer.
  • the TFT substrate is a flexible TFT substrate.
  • the material of the liquid metal layer is a binary eutectic alloy composed of indium and gallium.
  • the mass ratio of indium to gallium in the binary eutectic alloy composed of the indium and gallium is 1:3.
  • the first inorganic barrier layer is formed by low temperature plasma enhanced chemical vapor deposition
  • the liquid metal layer is formed by inkjet printing in a nitrogen atmosphere
  • the organic buffer layer is formed by inkjet printing
  • step S5 a step of curing the pair of the organic buffer layer is further included;
  • the second inorganic barrier layer is formed by low temperature plasma enhanced chemical vapor deposition
  • the region covered by the second inorganic barrier layer is the same as the region covered by the first inorganic barrier layer;
  • the first inorganic barrier layer and the second inorganic barrier layer are each a silicon nitride layer, a silicon oxide layer, or a silicon oxynitride layer.
  • the invention further provides a package structure of a flexible OLED panel, comprising: a TFT substrate, an OLED device disposed on the TFT substrate, a first inorganic barrier layer disposed on the TFT substrate and covering the OLED device, disposed at the a liquid metal layer on the first inorganic barrier layer, a liquid metal oxide film covering the surface of the liquid metal layer, an organic buffer layer provided on the first inorganic barrier layer and covering the liquid metal oxide film, and A second inorganic barrier layer on the first inorganic barrier layer and covering the organic buffer layer.
  • the TFT substrate is a flexible TFT substrate.
  • the material of the liquid metal layer is a binary eutectic alloy composed of indium and gallium.
  • the mass ratio of indium to gallium in the binary eutectic alloy composed of the indium and gallium is 1:3.
  • the region covered by the second inorganic barrier layer is the same as the region covered by the first inorganic barrier layer;
  • the first inorganic barrier layer and the second inorganic barrier layer are each a silicon nitride layer, a silicon oxide layer, or a silicon oxynitride layer.
  • the invention also provides a packaging method of a flexible OLED panel, comprising the following steps:
  • Step S1 providing a TFT substrate, and fabricating an OLED device on the TFT substrate;
  • Step S2 forming a first inorganic barrier layer covering the OLED device on the TFT substrate;
  • Step S3 forming a liquid metal layer on the first inorganic barrier layer
  • Step S4 oxidizing the liquid metal layer with oxygen to form a liquid metal oxide film on the surface of the liquid metal layer;
  • Step S5 forming an organic buffer layer covering the liquid metal oxide film on the first inorganic barrier layer
  • Step S6 forming a second inorganic barrier layer covering the organic buffer layer on the first inorganic barrier layer;
  • the TFT substrate is a flexible TFT substrate
  • the material of the liquid metal layer is a binary eutectic alloy composed of indium and gallium;
  • the first inorganic barrier layer is formed by low temperature plasma enhanced chemical vapor deposition
  • the liquid metal layer is formed by inkjet printing in a nitrogen atmosphere
  • the organic buffer layer is formed by inkjet printing
  • step S5 a step of curing the pair of the organic buffer layer is further included;
  • the second inorganic barrier layer is formed by low temperature plasma enhanced chemical vapor deposition
  • the region covered by the second inorganic barrier layer is the same as the region covered by the first inorganic barrier layer;
  • the first inorganic barrier layer and the second inorganic barrier layer are each a silicon nitride layer, a silicon oxide layer, or a silicon oxynitride layer.
  • the present invention provides a method for packaging a flexible OLED panel, which forms a liquid metal layer on a first inorganic barrier layer covering the OLED device, and oxidizes the liquid metal layer with oxygen in a liquid metal layer.
  • the metal oxide film collectively blocks the water and oxygen, and the liquid metal layer and the organic buffer layer are used to release the interlayer stress in the package structure, thereby ensuring the flexibility of the package structure and enhancing the ability of the package structure to block water oxygen, thereby effectively improving
  • the packaging effect of the flexible OLED panel The package structure of the flexible OLED panel provided by the invention has high water-oxygen barrier property and flexibility, and improves the packaging effect of the flexible OLED panel.
  • FIG. 1 is a flow chart of a method of packaging a flexible OLED panel of the present invention
  • step S3 is a schematic diagram of step S3 of a method for packaging a flexible OLED panel of the present invention
  • step S4 of a method for packaging a flexible OLED panel of the present invention
  • step S5 is a schematic diagram of step S5 of a method for packaging a flexible OLED panel of the present invention.
  • FIG. 7 is a schematic diagram of a step S6 of a method of packaging a flexible OLED panel of the present invention and a schematic diagram of a package structure of the flexible OLED panel of the present invention.
  • the present invention provides a method for packaging a flexible OLED panel, including the following steps:
  • Step S1 Referring to FIG. 2, a TFT substrate 100 is provided, and an OLED device 200 is fabricated on the TFT substrate 100.
  • the TFT substrate 100 is a flexible TFT substrate.
  • Step S2 referring to FIG. 3, a first inorganic barrier layer 310 covering the OLED device 200 is formed on the TFT substrate 100.
  • the first inorganic barrier layer 310 is a silicon nitride (SiN x ) layer, a silicon oxide (SiO x ) layer, or a silicon oxynitride (SiO x N y ) layer.
  • the first inorganic barrier layer 310 is formed by low temperature plasma enhanced chemical vapor deposition (PECVD).
  • PECVD low temperature plasma enhanced chemical vapor deposition
  • Step S3 referring to FIG. 4, a liquid metal layer 400 is formed on the first inorganic barrier layer 310.
  • the size of the coverage area of the liquid metal layer 400 is smaller than the size of the coverage area of the first inorganic barrier layer 310.
  • the material of the liquid metal layer 400 is a binary eutectic alloy composed of indium and gallium, and the density is similar to that of the solid metal, and has strong resistance to water and oxygen, and is strong because it is liquid. Flexibility.
  • the mass ratio of indium to gallium in the binary eutectic alloy composed of indium and gallium is 1:3.
  • the liquid metal layer 400 is formed by inkjet printing in a nitrogen (N 2 ) environment.
  • Step S4 referring to FIG. 5, the liquid metal layer 400 is oxidized by oxygen to form a liquid metal oxide film 500 on the surface of the liquid metal layer 400.
  • the liquid metal oxide film 500 is very dense and has excellent barrier. The performance of water oxygen, due to the presence of the liquid metal oxide film 500, prevents the liquid metal layer 400 therein from continuing to be oxidized, so that the liquid metal layer 400 in the liquid metal oxide film 500 remains in a liquid state while maintaining strong flexibility.
  • Step S5 referring to FIG. 6, an organic buffer layer 600 covering the liquid metal oxide film 500 is formed on the first inorganic barrier layer 310, and the size of the coverage area of the organic buffer layer 600 is smaller than that of the first inorganic barrier layer 310.
  • the organic buffer layer 600 is formed by inkjet printing.
  • a method of irradiating by ultraviolet light (UV) is further included.
  • the organic buffer layer 600 is subjected to a step of curing.
  • Step S6 referring to FIG. 7, a second inorganic barrier layer 320 covering the organic buffer layer 600 is formed on the first inorganic barrier layer 310.
  • the second inorganic barrier layer 320 is formed by low temperature plasma enhanced chemical vapor deposition.
  • the area covered by the second inorganic barrier layer 320 is the same as the area covered by the first inorganic barrier layer 310.
  • the second inorganic barrier layer 320 is a silicon nitride layer, a silicon oxide layer, or a silicon oxynitride layer.
  • the packaging method of the flexible OLED panel of the present invention forms a liquid metal layer 400 on the first inorganic barrier layer 310 covering the OLED device 200, and oxidizes the liquid metal layer 400 by using oxygen in the liquid metal layer.
  • the liquid metal oxide film 500 is formed on the surface of the 400, and then the organic buffer layer 600 and the second inorganic barrier layer 320 are sequentially formed on the liquid metal oxide film 500, thereby obtaining a package structure, and the first inorganic barrier layer 310 and the second inorganic barrier layer 320 are utilized.
  • the liquid metal layer 400 and the liquid metal oxide film 500 collectively block the water and oxygen, and the liquid metal layer 400 and the organic buffer layer 600 are used to release the interlayer stress in the package structure, thereby enhancing the flexibility of the package structure and enhancing the flexibility.
  • the ability of the package structure to block water and oxygen effectively enhances the packaging effect of the flexible OLED panel.
  • the present invention further provides a package structure of a flexible OLED panel, including: a TFT substrate 100, an OLED device 200 disposed on the TFT substrate 100, and a TFT substrate 100. And covering the first inorganic barrier layer 310 of the OLED device 200, the liquid metal layer 400 disposed on the first inorganic barrier layer 310, and the liquid metal oxide film 500 covering the surface of the liquid metal layer 400.
  • the size of the coverage area of the liquid metal layer 400 is smaller than the size of the coverage area of the first inorganic barrier layer 310, and the size of the coverage area of the organic buffer layer 600 is larger than the size of the coverage area of the liquid metal oxide film 500 and It is smaller than the size of the coverage area of the first inorganic barrier layer 310, and the area covered by the second inorganic barrier layer 320 is the same as the area covered by the first inorganic barrier layer 310.
  • the TFT substrate 100 is a flexible TFT substrate.
  • the material of the liquid metal layer 400 is a binary eutectic alloy composed of indium and gallium, and the density is similar to that of the solid metal, and has strong resistance to water and oxygen, and is strong because it is liquid. Flexibility, and due to the presence of the liquid metal oxide film 500, it is prevented The liquid metal layer 400 continues to be oxidized, so that the liquid metal layer 400 in the liquid metal oxide film 500 remains in a liquid state while maintaining strong flexibility.
  • the mass ratio of indium to gallium in the binary eutectic alloy composed of indium and gallium is 1:3.
  • the first inorganic barrier layer 310 and the second inorganic barrier layer 320 are each a silicon nitride layer, a silicon oxide layer, or a silicon oxynitride layer.
  • the package structure of the flexible OLED panel of the present invention is formed by disposing a liquid metal layer 400 on the first inorganic barrier layer 310 covering the OLED device 200 and forming a liquid metal oxide film 500 on the surface of the liquid metal layer 400.
  • An organic buffer layer 600 and a second inorganic barrier layer 320 are sequentially disposed on the liquid metal oxide film 500, and the first inorganic barrier layer 310, the second inorganic barrier layer 320, the liquid metal layer 400, and the liquid metal oxide film 500 are used for water together.
  • the oxygen is blocked, and the liquid metal layer 400 and the organic buffer layer 600 are used to release the interlayer stress in the package structure, thereby ensuring the flexibility of the package structure, enhancing the ability of the package structure to block water oxygen, and effectively improving the flexible OLED panel.
  • the packaging effect is not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to the interlayer stress in the package structure, and the liquid metal layer 400 and the organic buffer layer 600 are used to release the interlayer stress in the package structure, thereby ensuring the flexibility of the package structure, enhancing the ability of the package structure to block water oxygen, and effectively improving the flexible OLED panel.
  • the packaging effect is not limited to, and the liquid metal layer 400 and the organic buffer layer 600 are used to release the interlayer stress in the package structure, thereby ensuring the flexibility of the package structure, enhancing the ability of the package structure to block water oxygen, and effectively improving the flexible OLED panel.
  • the flexible OLED panel packaging method of the present invention forms a liquid metal layer on the first inorganic barrier layer covering the OLED device, and oxidizes the liquid metal layer with oxygen to form a liquid metal on the surface of the liquid metal layer.
  • An oxide film, and then an organic buffer layer and a second inorganic barrier layer are sequentially formed on the liquid metal oxide film, thereby obtaining a package structure, using the first inorganic barrier layer, the second inorganic barrier layer, the liquid metal layer, and the liquid metal oxide film together
  • the water and oxygen are blocked, and the liquid metal layer and the organic buffer layer are used to release the interlayer stress in the package structure, thereby ensuring the flexibility of the package structure, enhancing the ability of the package structure to block water oxygen, and effectively improving the flexible OLED panel.
  • the package structure of the flexible OLED panel of the invention has high water-oxygen barrier property and flexibility, and improves the packaging effect of the flexible OLED panel.

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Abstract

本发明提供一种柔性OLED面板的封装方法及封装结构。该柔性OLED面板的封装方法在覆盖OLED器件的第一无机阻挡层上形成液态金属层，并利用氧气对液态金属层进行氧化处理，在液态金属层表面形成液态金属氧化膜，之后在液态金属氧化膜上依次形成有机缓冲层及第二无机阻挡层，从而得到封装结构，利用第一无机阻挡层、第二无机阻挡层、液态金属层、及液态金属氧化膜共同对水氧进行阻隔，而利用液态金属层及有机缓冲层释放封装结构中的层间应力，在保证封装结构的柔性的同时，增强了封装结构阻隔水氧的能力，有效地提升了柔性OLED面板的封装效果。

Description

柔性OLED面板的封装方法及封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种柔性OLED面板的封装方法及封装结构。
背景技术
有机发光二极管显示装置(Organic Light Emitting Display，OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管(TFT)矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED显示技术与传统的液晶显示技术不同，无需背光灯，采用非常薄的有机材料涂层和玻璃基板，当有电流通过时，这些有机材料就会发光。但是由于有机材料易与水汽或氧气反应，作为基于有机材料的显示设备，OLED显示屏对封装的要求非常高，因此，通过OLED器件的封装提高器件内部的密封性，尽可能的与外部环境隔离，对于OLED器件的稳定发光至关重要。
目前OLED器件的封装主要在硬质封装基板(如玻璃或金属)上通过封装胶封装，但是该方法并不适用于柔性器件，因此，也有技术方案通过叠层的薄膜对OLED器件进行封装，该薄膜封装方式一般是在基板上的OLED器件上方形成两层为无机材料的阻水阻气性好的阻挡层(barrier layer)，在两层阻挡层之间形成一层为有机材料的柔韧性好的缓冲层(buffer layer)。阻挡层用于对外部水氧进行阻挡，而缓冲层的作用为释放相邻阻隔层之间的应力，使该封装结构能够应用于柔性装置中，然而，采用有机材料制作的缓冲层的结构不够致密，起不到明显的阻隔水氧的效果，使封装结构整体的水氧阻隔性能受到限制。
作为近些年开发的新材料，铟及铟的合金拥有一些独特的性质，其对水汽和氧气的渗透率很低，熔点低，可塑性好，且具有一定的柔韧性，在 电子行业中拥有广阔的应用前景。其中，由铟和镓构成的二元共晶合金(低共熔合金)，其致密程度与固态金属类似，阻水阻氧性能很好，且常温下是可以流动的液态金属。当暴露在空气中时，室温下空气中的氧气会与铟和镓构成的二元共晶合金反应，在材料表面逐步硬化形成氧化膜，氧化膜非常致密，拥有非常好的阻水阻氧性能，同时也阻止了材料内部被氧化，因此内部仍然保持液态，从而保持柔性。
发明内容
本发明的目的在于提供一种柔性OLED面板的封装方法，能够提升封装结构的水氧阻隔性及柔性，提升柔性OLED面板的封装效果。
本发明的另一目的在于提供一种柔性OLED面板的封装结构，具有较高的水氧阻隔性及柔性，提升柔性OLED面板的封装效果。
为实现上述目的，本发明首先提供一种柔性OLED面板的封装方法，包括如下步骤：
步骤S1、提供TFT基板，在所述TFT基板上制作OLED器件；
步骤S2、在所述TFT基板上形成覆盖OLED器件的第一无机阻挡层；
步骤S3、在所述第一无机阻挡层上形成一液态金属层；
步骤S4、利用氧气对所述液态金属层进行氧化处理，在所述液态金属层表面形成液态金属氧化膜；
步骤S5、在所述第一无机阻挡层上形成覆盖液态金属氧化膜的有机缓冲层；
步骤S6、在所述第一无机阻挡层上形成覆盖有机缓冲层的第二无机阻挡层。
所述TFT基板为柔性TFT基板。
所述液态金属层的材料为铟和镓构成的二元共晶合金。
所述铟和镓构成的二元共晶合金中铟与镓的质量比为1:3。
所述步骤S2中，通过低温等离子体增强化学气相沉积的方式形成所述第一无机阻挡层；
所述步骤S3中，在氮气的环境中，通过喷墨打印的方式形成所述液态金属层；
所述步骤S5中，通过喷墨打印的方式形成所述有机缓冲层；
所述步骤S5之后还包括一对所述有机缓冲层进行固化的步骤；
所述步骤S6中，通过低温等离子体增强化学气相沉积的方式形成所述第二无机阻挡层；
所述第二无机阻挡层覆盖的区域与所述第一无机阻挡层覆盖的区域相同；
所述第一无机阻挡层及第二无机阻挡层均为氮化硅层、氧化硅层、或氮氧化硅层。
本发明还提供一种柔性OLED面板的封装结构，包括：TFT基板、设于所述TFT基板上的OLED器件、设于所述TFT基板上且覆盖OLED器件的第一无机阻挡层、设于所述第一无机阻挡层上的液态金属层、覆盖所述液态金属层表面的液态金属氧化膜、设于所述第一无机阻挡层上且覆盖液态金属氧化膜的有机缓冲层、以及设于所述第一无机阻挡层上且覆盖有机缓冲层的第二无机阻挡层。
所述TFT基板为柔性TFT基板。
所述液态金属层的材料为铟和镓构成的二元共晶合金。
所述铟和镓构成的二元共晶合金中铟与镓的质量比为1:3。
所述第二无机阻挡层覆盖的区域与所述第一无机阻挡层覆盖的区域相同；
所述第一无机阻挡层及第二无机阻挡层均为氮化硅层、氧化硅层、或氮氧化硅层。
本发明还提供一种柔性OLED面板的封装方法，包括如下步骤：
步骤S1、提供TFT基板，在所述TFT基板上制作OLED器件；
步骤S2、在所述TFT基板上形成覆盖OLED器件的第一无机阻挡层；
步骤S3、在所述第一无机阻挡层上形成一液态金属层；
步骤S4、利用氧气对所述液态金属层进行氧化处理，在所述液态金属层表面形成液态金属氧化膜；
步骤S5、在所述第一无机阻挡层上形成覆盖液态金属氧化膜的有机缓冲层；
步骤S6、在所述第一无机阻挡层上形成覆盖有机缓冲层的第二无机阻挡层；
其中，所述TFT基板为柔性TFT基板；
其中，所述液态金属层的材料为铟和镓构成的二元共晶合金；
其中，所述铟和镓构成的二元共晶合金中铟与镓的质量比为1:3；
其中，所述步骤S2中，通过低温等离子体增强化学气相沉积的方式形成所述第一无机阻挡层；
所述步骤S3中，在氮气的环境中，通过喷墨打印的方式形成所述液态金属层；
所述步骤S5中，通过喷墨打印的方式形成所述有机缓冲层；
所述步骤S5之后还包括一对所述有机缓冲层进行固化的步骤；
所述步骤S6中，通过低温等离子体增强化学气相沉积的方式形成所述第二无机阻挡层；
所述第二无机阻挡层覆盖的区域与所述第一无机阻挡层覆盖的区域相同；
所述第一无机阻挡层及第二无机阻挡层均为氮化硅层、氧化硅层、或氮氧化硅层。
本发明的有益效果：本发明提供的一种柔性OLED面板的封装方法，在覆盖OLED器件的第一无机阻挡层上形成液态金属层，并利用氧气对液态金属层进行氧化处理，在液态金属层表面形成液态金属氧化膜，之后在液态金属氧化膜上依次形成有机缓冲层及第二无机阻挡层，从而得到封装结构，利用第一无机阻挡层、第二无机阻挡层、液态金属层、及液态金属氧化膜共同对水氧进行阻隔，而利用液态金属层及有机缓冲层释放封装结构中的层间应力，在保证封装结构的柔性的同时，增强了封装结构阻隔水氧的能力，有效地提升了柔性OLED面板的封装效果。本发明提供的一种柔性OLED面板的封装结构，具有较高的水氧阻隔性及柔性，提升柔性OLED面板的封装效果。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的柔性OLED面板的封装方法的流程图；
图2为本发明的柔性OLED面板的封装方法的步骤S1的示意图；
图3为本发明的柔性OLED面板的封装方法的步骤S2的示意图；
图4为本发明的柔性OLED面板的封装方法的步骤S3的示意图；
图5为本发明的柔性OLED面板的封装方法的步骤S4的示意图；
图6为本发明的柔性OLED面板的封装方法的步骤S5的示意图；
图7为本发明的柔性OLED面板的封装方法的步骤S6的示意图暨本发明的柔性OLED面板的封装结构的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种柔性OLED面板的封装方法，包括如下步骤：
步骤S1、请参阅图2，提供TFT基板100，在所述TFT基板100上制作OLED器件200。
具体地，所述TFT基板100为柔性TFT基板。
步骤S2、请参阅图3，在所述TFT基板100上形成覆盖OLED器件200的第一无机阻挡层310。
具体地，所述第一无机阻挡层310为氮化硅(SiNx)层、氧化硅(SiOx)层、或氮氧化硅(SiOxNy)层。
具体地，所述步骤S2中，通过低温等离子体增强化学气相沉积(PECVD)的方式形成所述第一无机阻挡层310。
步骤S3、请参阅图4，在所述第一无机阻挡层310上形成一液态金属层400，该液态金属层400覆盖区域的尺寸小于第一无机阻挡层310覆盖区域的尺寸。
具体地，所述液态金属层400的材料为铟和镓构成的二元共晶合金，其致密程度与固态金属类似，具有很强的阻隔水氧的性能，同时因其为液态，具有很强的柔性。
优选地，所述铟和镓构成的二元共晶合金中铟与镓的质量比为1:3。
具体地，所述步骤S3中，在氮气(N2)的环境中，通过喷墨打印的方式形成所述液态金属层400。
步骤S4、请参阅图5，利用氧气对所述液态金属层400进行氧化处理，在所述液态金属层400表面形成液态金属氧化膜500，该液态金属氧化膜500非常致密，拥有极好的阻隔水氧的性能，由于液态金属氧化膜500的存在，阻止了其内的液态金属层400继续被氧化，从而使液态金属氧化膜500内的液态金属层400保持液态而保持较强的柔性。
步骤S5、请参阅图6，在所述第一无机阻挡层310上形成覆盖液态金属氧化膜500的有机缓冲层600，该有机缓冲层600覆盖区域的尺寸小于第一无机阻挡层310覆盖区域的尺寸，并且由于有机缓冲层600覆盖液态金属氧化膜500，也即有机缓冲层600覆盖区域的尺寸大于液态金属氧化膜500覆盖区域的尺寸。
具体地，所述步骤S5中，通过喷墨打印的方式形成所述有机缓冲层600。
具体地，所述步骤S5之后还包括一通过紫外光(UV)照射的方式对 所述有机缓冲层600进行固化的步骤。
步骤S6、请参阅图7，在所述第一无机阻挡层310上形成覆盖有机缓冲层600的第二无机阻挡层320。
具体地，所述步骤S6中，通过低温等离子体增强化学气相沉积的方式形成所述第二无机阻挡层320。
具体地，所述第二无机阻挡层320覆盖的区域与所述第一无机阻挡层310覆盖的区域相同。
具体地，所述第二无机阻挡层320为氮化硅层、氧化硅层、或氮氧化硅层。
需要说明的是，本发明的柔性OLED面板的封装方法通过在覆盖OLED器件200的第一无机阻挡层310上形成液态金属层400，并利用氧气对液态金属层400进行氧化处理，在液态金属层400表面形成液态金属氧化膜500，之后在液态金属氧化膜500上依次形成有机缓冲层600及第二无机阻挡层320，从而得到封装结构，利用第一无机阻挡层310、第二无机阻挡层320、液态金属层400、及液态金属氧化膜500共同对水氧进行阻隔，而利用液态金属层400及有机缓冲层600释放封装结构中的层间应力，在保证封装结构的柔性的同时，增强了封装结构阻隔水氧的能力，有效地提升了柔性OLED面板的封装效果。
请参阅图7，基于同一发明构思，本发明还提供一种柔性OLED面板的封装结构，包括：TFT基板100、设于所述TFT基板100上的OLED器件200、设于所述TFT基板100上且覆盖OLED器件200的第一无机阻挡层310、设于所述第一无机阻挡层310上的液态金属层400、覆盖所述液态金属层400表面的液态金属氧化膜500、设于所述第一无机阻挡层310上且覆盖液态金属氧化膜500的有机缓冲层600、以及设于所述第一无机阻挡层310上且覆盖有机缓冲层600的第二无机阻挡层320。
具体地，所述液态金属层400覆盖区域的尺寸小于所述第一无机阻挡层310覆盖区域的尺寸，所述有机缓冲层600覆盖区域的尺寸大于所述液态金属氧化膜500覆盖区域的尺寸且小于所述第一无机阻挡层310覆盖区域的尺寸，所述第二无机阻挡层320覆盖的区域与所述第一无机阻挡层310覆盖的区域相同。
具体地，所述TFT基板100为柔性TFT基板。
具体地，所述液态金属层400的材料为铟和镓构成的二元共晶合金，其致密程度与固态金属类似，具有很强的阻隔水氧的性能，同时因其为液态，具有很强的柔性，且由于液态金属氧化膜500的存在，阻止了其内的 液态金属层400继续被氧化，从而使液态金属氧化膜500内的液态金属层400保持液态而保持较强的柔性。
优选地，所述铟和镓构成的二元共晶合金中铟与镓的质量比为1:3。
具体地，所述第一无机阻挡层310及第二无机阻挡层320均为氮化硅层、氧化硅层、或氮氧化硅层。
需要说明的是，本发明的柔性OLED面板的封装结构，通过在覆盖OLED器件200的第一无机阻挡层310上设置液态金属层400，并在液态金属层400表面形成液态金属氧化膜500，之后在液态金属氧化膜500上依次设置有机缓冲层600及第二无机阻挡层320，利用第一无机阻挡层310、第二无机阻挡层320、液态金属层400、及液态金属氧化膜500共同对水氧进行阻隔，而利用液态金属层400及有机缓冲层600释放封装结构中的层间应力，在保证封装结构的柔性的同时，增强了封装结构阻隔水氧的能力，有效地提升了柔性OLED面板的封装效果。
综上所述，本发明的柔性OLED面板的封装方法，在覆盖OLED器件的第一无机阻挡层上形成液态金属层，并利用氧气对液态金属层进行氧化处理，在液态金属层表面形成液态金属氧化膜，之后在液态金属氧化膜上依次形成有机缓冲层及第二无机阻挡层，从而得到封装结构，利用第一无机阻挡层、第二无机阻挡层、液态金属层、及液态金属氧化膜共同对水氧进行阻隔，而利用液态金属层及有机缓冲层释放封装结构中的层间应力，在保证封装结构的柔性的同时，增强了封装结构阻隔水氧的能力，有效地提升了柔性OLED面板的封装效果。本发明的柔性OLED面板的封装结构，具有较高的水氧阻隔性及柔性，提升柔性OLED面板的封装效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种柔性OLED面板的封装方法，包括如下步骤：
    步骤S1、提供TFT基板，在所述TFT基板上制作OLED器件；
    步骤S2、在所述TFT基板上形成覆盖OLED器件的第一无机阻挡层；
    步骤S3、在所述第一无机阻挡层上形成一液态金属层；
    步骤S4、利用氧气对所述液态金属层进行氧化处理，在所述液态金属层表面形成液态金属氧化膜；
    步骤S5、在所述第一无机阻挡层上形成覆盖液态金属氧化膜的有机缓冲层；
    步骤S6、在所述第一无机阻挡层上形成覆盖有机缓冲层的第二无机阻挡层。
  2. 如权利要求1所述的柔性OLED面板的封装方法，其中，所述TFT基板为柔性TFT基板。
  3. 如权利要求1所述的柔性OLED面板的封装方法，其中，所述液态金属层的材料为铟和镓构成的二元共晶合金。
  4. 如权利要求3所述的柔性OLED面板的封装方法，其中，所述铟和镓构成的二元共晶合金中铟与镓的质量比为1:3。
  5. 如权利要求1所述的柔性OLED面板的封装方法，其中，所述步骤S2中，通过低温等离子体增强化学气相沉积的方式形成所述第一无机阻挡层；
    所述步骤S3中，在氮气的环境中，通过喷墨打印的方式形成所述液态金属层；
    所述步骤S5中，通过喷墨打印的方式形成所述有机缓冲层；
    所述步骤S5之后还包括一对所述有机缓冲层进行固化的步骤；
    所述步骤S6中，通过低温等离子体增强化学气相沉积的方式形成所述第二无机阻挡层；
    所述第二无机阻挡层覆盖的区域与所述第一无机阻挡层覆盖的区域相同；
    所述第一无机阻挡层及第二无机阻挡层均为氮化硅层、氧化硅层、或氮氧化硅层。
  6. 一种柔性OLED面板的封装结构，包括：TFT基板、设于所述TFT基板上的OLED器件、设于所述TFT基板上且覆盖OLED器件的第一无机 阻挡层、设于所述第一无机阻挡层上的液态金属层、覆盖所述液态金属层表面的液态金属氧化膜、设于所述第一无机阻挡层上且覆盖液态金属氧化膜的有机缓冲层、以及设于所述第一无机阻挡层上且覆盖有机缓冲层的第二无机阻挡层。
  7. 如权利要求6所述的柔性OLED面板的封装结构，其中，所述TFT基板为柔性TFT基板。
  8. 如权利要求6所述的柔性OLED面板的封装结构，其中，所述液态金属层的材料为铟和镓构成的二元共晶合金。
  9. 如权利要求8所述的柔性OLED面板的封装结构，其中，所述铟和镓构成的二元共晶合金中铟与镓的质量比为1:3。
  10. 如权利要求6所述的柔性OLED面板的封装结构，其中，所述第二无机阻挡层覆盖的区域与所述第一无机阻挡层覆盖的区域相同；
    所述第一无机阻挡层及第二无机阻挡层均为氮化硅层、氧化硅层、或氮氧化硅层。
  11. 一种柔性OLED面板的封装方法，包括如下步骤：
    步骤S1、提供TFT基板，在所述TFT基板上制作OLED器件；
    步骤S2、在所述TFT基板上形成覆盖OLED器件的第一无机阻挡层；
    步骤S3、在所述第一无机阻挡层上形成一液态金属层；
    步骤S4、利用氧气对所述液态金属层进行氧化处理，在所述液态金属层表面形成液态金属氧化膜；
    步骤S5、在所述第一无机阻挡层上形成覆盖液态金属氧化膜的有机缓冲层；
    步骤S6、在所述第一无机阻挡层上形成覆盖有机缓冲层的第二无机阻挡层；
    其中，所述TFT基板为柔性TFT基板；
    其中，所述液态金属层的材料为铟和镓构成的二元共晶合金；
    其中，所述铟和镓构成的二元共晶合金中铟与镓的质量比为1:3；
    其中，所述步骤S2中，通过低温等离子体增强化学气相沉积的方式形成所述第一无机阻挡层；
    所述步骤S3中，在氮气的环境中，通过喷墨打印的方式形成所述液态金属层；
    所述步骤S5中，通过喷墨打印的方式形成所述有机缓冲层；
    所述步骤S5之后还包括一对所述有机缓冲层进行固化的步骤；
    所述步骤S6中，通过低温等离子体增强化学气相沉积的方式形成所述 第二无机阻挡层；
    所述第二无机阻挡层覆盖的区域与所述第一无机阻挡层覆盖的区域相同；
    所述第一无机阻挡层及第二无机阻挡层均为氮化硅层、氧化硅层、或氮氧化硅层。
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