WO2019075808A1 - 一种oled器件及其制作方法 - Google Patents

一种oled器件及其制作方法 Download PDF

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WO2019075808A1
WO2019075808A1 PCT/CN2017/110777 CN2017110777W WO2019075808A1 WO 2019075808 A1 WO2019075808 A1 WO 2019075808A1 CN 2017110777 W CN2017110777 W CN 2017110777W WO 2019075808 A1 WO2019075808 A1 WO 2019075808A1
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layer
organic material
negative photoresist
light
material layer
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任泓扬
徐湘伦
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices

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  • the present invention relates to the field of screen display technologies, and in particular, to an OLED device and a method of fabricating the same.
  • OLED organic light-emitting diode
  • the organic light emitting diode is composed of a multilayer structure having different functions.
  • the inherent properties of each layer of material and its compatibility with other layers of material are very important.
  • the multilayer structure generally includes a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), and the like.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • ETL electron transport layer
  • EIL electron injection layer
  • FIG. 1 in a multi-color OLED based on red, green and blue colors, the film thickness of different layers can be adjusted to adjust the microcavity effect of the OLED component, thereby improving the light extraction efficiency and Adjust the effect of narrowing the spectral width of each color.
  • the spectral width of the three color layers can be adjusted by adjusting the film thickness of the hole transport layer HTL in the three colors of red, green and blue to achieve the effect of balancing colors.
  • the HTL cannot be vapor-deposited as a common layer, and the step of using a fine metal mask is required. This not only increases the time of the process, but also greatly increases the cost of the organic light-emitting diode due to problems in metal mask cleaning. Moreover, an alignment issue in the use of a fine metal mask is also caused, which greatly reduces the success rate of the organic light emitting diode.
  • the technical problem to be solved by the present invention is to provide an OLED device and a manufacturing method thereof, which can not only enhance the microcavity effect, but also reduce the use of a fine metal mask.
  • the present invention provides a method for fabricating an OLED device, including:
  • Step S1 sequentially depositing a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a first cathode on the anode;
  • Step S2 forming an organic material layer corresponding to each sub-pixel of the light-emitting layer and adjusting the microcavity effect by using photolithography on the first cathode;
  • step S3 a second cathode is evaporated on the organic material layer.
  • the step S2 specifically includes:
  • Step S21 coating a negative photoresist of compatible organic material on the first cathode
  • Step S22 a photomask is disposed at a position corresponding to the sub-pixel of the light-emitting layer, and the negative photoresist is exposed and developed by using the photomask;
  • Step S23 depositing an organic material layer for adjusting the microcavity effect on the position where the negative photoresist is washed away by the developer and the remaining negative photoresist;
  • Step S24 peeling off the remaining negative photoresist and the organic material layer thereon to obtain an organic material layer corresponding to the light emitting layer sub-pixel;
  • step S25 the steps S21-S24 are repeated until an organic material layer corresponding to each sub-pixel of the light-emitting layer is obtained.
  • the negative photoresist contains a fluorine-substituted carbon chain structure.
  • the negative photoresist has a photosensitive component containing a halogen solvent, a photoacid generator compound, a monomer comprising at least one fluorine-containing group, and comprising at least one acid-soluble ester-containing group a copolymer of a monomer of a group.
  • the halogen solvent is a hydrogenated fluoroether or a separated hydrogenated fluoroether
  • the copolymer is a random copolymer
  • the invention also provides an OLED device comprising:
  • a second cathode formed is deposited on the organic material layer.
  • the organic material layer is formed by:
  • the negative photoresist contains a fluorine-substituted carbon chain structure.
  • the negative photoresist has a photosensitive component containing a halogen solvent, a photoacid generator compound, a monomer comprising at least one fluorine-containing group, and comprising at least one acid-soluble ester-containing group a copolymer of a monomer of a group.
  • the halogen solvent is a hydrogenated fluoroether or a separated hydrogenated fluoroether
  • the copolymer is a random copolymer
  • the beneficial effects of the embodiments of the present invention are: adding a conductive organic material layer between the two cathodes by using a photolithography process that has no influence on the OLED material, and enhancing the microcavity effect by adjusting the film thickness of the layer, the photolithography process and the CF process Unlike the lithography process of the anode, a fine metal reticle is not required, thereby saving the time and cost of the OLED process process and increasing the fabrication efficiency.
  • FIG. 1 is a schematic diagram of a conventional OLED device adjusting a microcavity effect of different colors by adjusting a film thickness of an HTL.
  • FIG. 2 is a schematic flow chart of a method for fabricating an OLED device according to an embodiment of the present invention.
  • FIG. 3 is a schematic flow chart of a method for fabricating an OLED device according to an embodiment of the present invention.
  • FIG 4 is an OLED produced by the method for fabricating an OLED device according to an embodiment of the present invention.
  • the history of lithography has been developed for more than 200 years, with mature technology and complete process.
  • Materials used in lithography photoresists, developers, etc.
  • the invention adopts the lithography technology directly on the cathode of the organic light emitting diode to type the organic material layer (MCL) of different thicknesses to achieve the purpose of adjusting the microcavity effect, and the photoresist and the stripping liquid used in the lithography technology have almost no OLED material.
  • MCL organic material layer
  • the impact does not require the use of a fine metal mask FMM, which reduces costs and saves time in the process.
  • a first embodiment of the present invention provides a method for fabricating an OLED device, including:
  • Step S1 sequentially depositing a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a first cathode on the anode;
  • Step S2 forming an organic material layer corresponding to each sub-pixel of the light-emitting layer and adjusting the microcavity effect by using photolithography on the first cathode;
  • step S3 a second cathode is evaporated on the organic material layer.
  • step S1 actually corresponds to the conventional fabrication process of the OLED device, and the fine metal mask is used only when the light-emitting layer EML is evaporated, and the other layers are all vapor-deposited as a common layer.
  • step S2 specifically includes:
  • Step S21 coating a negative photoresist of compatible organic material on the first cathode
  • Step S22 a photomask is disposed at a position corresponding to the sub-pixel of the light-emitting layer, and the negative photoresist is exposed and developed by using the photomask;
  • Step S23 depositing an organic material layer for adjusting the microcavity effect on the position where the negative photoresist is washed away by the developer and the remaining negative photoresist;
  • Step S24 peeling off the remaining negative photoresist and the organic material layer thereon to obtain an organic material layer corresponding to the light emitting layer sub-pixel;
  • Step S25 repeating the steps S21-S24 until the respective sub-pixels of the corresponding illuminating layer are obtained.
  • Machine material layer
  • a layer of negative photoresist is applied to form a photoresist layer in step S21.
  • the negative photoresist is compatible with organic materials and does not destroy the properties of organic materials.
  • the negative photoresist of this embodiment contains a fluorine-substituted carbon chain structure to ensure that the lithographic process does not chemically react with the OLED material when it is in contact with the OLED. , only the reaction effect on the etching solution.
  • the negative photoresist has a photosensitive component containing a halogen-cintaining solvent, a photoacid generator compound, and at least one fluorine-containing group (A fluoro-containing group of a copolymer with a monomer comprising at least one acid-hydrolyzable ester-containing group.
  • the halogen solvent is a hydrofluoroether or a separated segregated hydrofluoroether.
  • the copolymer is a random copolymer.
  • a photomask is disposed at a position corresponding to the light-emitting layer sub-pixel (for example, the R sub-pixel shown in FIG. 3), and the image on the photomask is transferred to the photoresist layer by UV illumination.
  • the design of the photomask should match the corresponding subpixel. It should be noted that the photomask used here is not a fine metal mask.
  • step S23 is performed to deposit a layer of a more conductive organic material (MCL) for adjusting the microcavity effect at a position where the negative photoresist is washed away by the developer and the remaining negative photoresist.
  • step S24 the remaining negative photoresist is stripped with a stripper. Since the stripper only dissolves the negative photoresist, the remaining negative photoresist is dissolved and stripped, and the organic material thereon is removed. The layer is also peeled off, leaving only the organic material layer located in the developing region corresponding to the sub-pixel of the light-emitting layer R, thereby causing the organic material layer to form a pattern at a specified position.
  • step S3 a metal layer is vapor-deposited on each organic material layer as a second cathode to obtain an OLED display device as shown in FIG.
  • the OLED display device is different from the prior art, including a first cathode and a second cathode.
  • Second cathode and first cathode The materials of the poles may be the same or different, and metals such as magnesium, silver, aluminum or the like are generally used as the cathode material.
  • the fabrication method of this embodiment is to use no effect on the OLED material between the two cathodes.
  • the photolithography process adds a layer of conductive organic material, and the microcavity effect is enhanced by adjusting the film thickness of the layer.
  • This photolithography process is different from the photolithography process for fabricating CF and anode, and does not require a fine metal mask, thereby saving the OLED process technology. Time and cost increase production efficiency.
  • an embodiment of the present invention provides an OLED device, as shown in FIG. 4, including:
  • a second cathode formed is deposited on the organic material layer.
  • the organic material layer is formed by:
  • the negative photoresist contains a fluorine-substituted carbon chain structure.
  • the negative photoresist has a photosensitive component containing a halogen solvent, a photoacid generator compound, a monomer comprising at least one fluorine-containing group, and comprising at least one acid-soluble ester-containing group a copolymer of a monomer of a group.
  • the halogen solvent is a hydrogenated fluoroether or a separated hydrogenated fluoroether
  • the copolymer is a random copolymer

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Abstract

一种OLED器件及其制作方法，其中，制作方法包括：步骤S1，在阳极上依次蒸镀空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及第一阴极；步骤S2，在第一阴极上采用光刻形成对应发光层各个子像素、用于调节微腔效应的有机材料层；步骤S3，在所述有机材料层上蒸镀第二阴极。在两层阴极之间采用对OLED材料没有影响的光刻工艺加入导电有机材料层，通过调整该层膜厚来增强微腔效应，该光刻工艺与制作CF和阳极的光刻工艺不同，不需要精细金属掩模版，从而节省了OLED制程工艺的时间和成本，增加了制作效率。

Description

一种OLED器件及其制作方法
本申请要求于2017年10月18日提交中国专利局、申请号为201710972251.X、发明名称为“一种OLED器件及其制作方法”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及屏幕显示技术领域，尤其涉及一种OLED器件及其制作方法。
背景技术
有机发光二极管OLED(Organic light-emitting Diode)通过有机层自主发光显示，由于不需要背光源，因此具有更快的响应时间，更大的可视角度，更高的对比度以及更轻的元器件质量，低功耗等特点，是目前公认的最有潜力的平板显示技术。
有机发光二极管由具有不同功能的多层结构组成。每层材料的固有属性及其与其他层材料的兼容性是非常重要的。多层结构中，通常包括空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)以及电子注入层(EIL)等。如图1所示，在基于红、绿、蓝三色的彩色有机发光二极管中(multi-color OLED)，可以调节不同层的膜厚来调节OLED元器件的微腔效应，达到提高出光效率和调节每种颜色谱宽(spectral width)窄化的作用。譬如，可以通过调节红绿蓝三种颜色中空穴传输层HTL的膜厚，来调整三种颜色的谱宽，达到平衡颜色的效果。在这种设计中，HTL就不能够作为公共层(common layer)来蒸镀，需要增加使用精细金属掩膜版(Fine metal mask)的步骤。这样不仅增加了流程工艺的时间，而且由于金属掩膜版清洗方面的问题，大大增加了有机发光二极管的成本。并且，还会引发精细金属掩膜版使用中的对准问题(alignment issue)，大大降低了有机发光二极管成功率。
发明内容
本发明所要解决的技术问题在于，提供一种OLED器件及其制作方法，不仅可以增强微腔效应，还将减少精细金属掩膜版的使用。
为了解决上述技术问题，本发明提供一种OLED器件的制作方法，包括：
步骤S1，在阳极上依次蒸镀空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及第一阴极；
步骤S2，在第一阴极上采用光刻形成对应发光层各个子像素、用于调节微腔效应的有机材料层；
步骤S3，在所述有机材料层上蒸镀第二阴极。
其中，所述步骤S2具体包括：
步骤S21，在第一阴极上涂布一层可兼容有机材料的负性光刻胶；
步骤S22，在对应发光层子像素的位置设置光掩膜版，利用所述光掩膜版对所述负性光刻胶进行曝光、显影；
步骤S23，在所述负性光刻胶被显影液洗去的位置以及剩余的负性光刻胶上蒸镀一层用于调节微腔效应的有机材料层；
步骤S24，剥离所述剩余的负性光刻胶及其上的有机材料层，获得对应所述发光层子像素的有机材料层；
步骤S25，重复所述步骤S21-S24直至获得对应发光层各个子像素的有机材料层。
其中，所述负性光刻胶含有氟元素取代的碳链结构。
其中，所述负性光刻胶具有光敏组分，所述光敏组分含有卤素溶剂、光致产酸剂化合物、包含至少一个含氟基团的单体与包含至少一个可酸解含酯基团的单体的共聚物。
其中，所述卤素溶剂为氢化氟醚或分离的氢化氟醚，所述共聚物为无规共聚物。
本发明还提供一种OLED器件，包括：
阳极，以及在阳极上依次蒸镀形成的空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及第一阴极；
在所述第一阴极上通过光刻形成对应发光层各个子像素、用于调节微腔效应的有机材料层；
在所述有机材料层上蒸镀形成的第二阴极。
其中，所述有机材料层通过以下方式形成：
在对应发光层子像素的位置设置光掩膜版，利用所述光掩膜版对所述负性光刻胶进行曝光、显影；
在所述负性光刻胶被显影液洗去的位置以及剩余的负性光刻胶上蒸镀一层用于调节微腔效应的有机材料层；
剥离所述剩余的负性光刻胶及其上的有机材料层，获得对应所述发光层子像素的有机材料层；
重复上述步骤直至获得对应发光层各个子像素的有机材料层。
其中，所述负性光刻胶含有氟元素取代的碳链结构。
其中，所述负性光刻胶具有光敏组分，所述光敏组分含有卤素溶剂、光致产酸剂化合物、包含至少一个含氟基团的单体与包含至少一个可酸解含酯基团的单体的共聚物。
其中，所述卤素溶剂为氢化氟醚或分离的氢化氟醚，所述共聚物为无规共聚物。
本发明实施例的有益效果在于：在两层阴极之间采用对OLED材料没有影响的光刻工艺加入导电有机材料层，通过调整该层膜厚来增强微腔效应，该光刻工艺与制作CF和阳极的光刻工艺不同，不需要精细金属掩模版，从而节省了OLED制程工艺的时间和成本，增加了制作效率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有OLED器件通过调节HTL的膜厚来调节不同颜色的微腔效应的示意图。
图2是本发明实施例一一种OLED器件的制作方法的流程示意图。
图3是本发明实施例一一种OLED器件的制作方法的具体流程示意图。
图4是按本发明实施例一一种OLED器件的制作方法制作得到的OLED 显示器件的结构示意图。
具体实施方式
以下各实施例的说明是参考附图，用以示例本发明可以用以实施的特定实施例。
光刻技术发展的历史已经有200余年，技术设备成熟，具有完善的工艺流程。光刻技术中应用的材料(光刻胶，显影液等等)造价低廉。本发明采取直接在有机发光二极管的阴极上应用光刻技术排版不同厚度的有机材料层(MCL)，达到调整微腔效应的目的，该光刻技术使用的光阻和剥离液对OLED材料几乎没有影响，不需要使用精细金属掩膜版FMM，既降低成本，又节省了流程的时间。
请参照图2所示，本发明实施例一提供一种OLED器件的制作方法，包括：
步骤S1，在阳极上依次蒸镀空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及第一阴极；
步骤S2，在第一阴极上采用光刻形成对应发光层各个子像素、用于调节微腔效应的有机材料层；
步骤S3，在所述有机材料层上蒸镀第二阴极。
具体地，本实施例中，步骤S1实际相当于OLED器件的传统制作流程，并且只在蒸镀发光层EML时才使用精细金属掩膜版，其他层均作为公共层进行蒸镀。
进一步地，步骤S2具体包括：
步骤S21，在第一阴极上涂布一层可兼容有机材料的负性光刻胶；
步骤S22，在对应发光层子像素的位置设置光掩膜版，利用该光掩膜版对所述负性光刻胶进行曝光、显影；
步骤S23，在所述负性光刻胶被显影液洗去的位置以及剩余的负性光刻胶上蒸镀一层用于调节微腔效应的有机材料层；
步骤S24，剥离所述剩余的负性光刻胶及其上的有机材料层，获得对应所述发光层子像素的有机材料层；
步骤S25，重复所述步骤S21-S24直至获得对应发光层各个子像素的有 机材料层。
请结合图3所示，步骤S21涂布一层负性光刻胶，形成光阻层。该负性光刻胶与有机材料兼容，不会破坏有机材料的属性。与制作CF和阳极时使用的光刻胶不同，本实施例的负性光刻胶含有氟元素取代的碳链结构，以保证执行光刻工艺与OLED接触时，不会与OLED材料发生化学反应，只对刻蚀液有反应的效果。作为一种示例，该负性光刻胶具有光敏组分，该光敏组分含有卤素溶剂(halogen-cintaining solvent)、光致产酸剂化合物(photoacid generator compound)、包含至少一个含氟基团(fluoro-containing group)的单体与包含至少一个可酸解含酯基团(acid-hydrolyzable ester-containing group)的单体的共聚物(copolymer)。进一步地，所述卤素溶剂为氢化氟醚(hydrofluoroether)或分离的氢化氟醚(segregated hydrofluoroether)。所述共聚物为无规共聚物(random copolymer)。
接着执行步骤S22，在对应发光层子像素(图3所示以R子像素为例)的位置设置光掩膜版，用UV光照将光掩膜版上的图像转移到光阻层。光掩膜版的设计应该与相应的子像素匹配。需要说明的是，此处使用的光掩膜版并非精细金属掩膜版。
经曝光、显影之后，未被曝光的负性光刻胶都被显影液洗掉。然后执行步骤S23，在负性光刻胶被显影液洗去的位置以及剩余的负性光刻胶上蒸镀一层用于调节微腔效应的导电性较好的有机材料层(MCL)。之后执行步骤S24，用剥离剂剥离该剩余的负性光刻胶，由于剥离剂只对该负性光刻胶有溶解作用，因此剩余的负性光刻胶被溶解剥离，其上的有机材料层也被随之剥离，只留下位于显影区对应发光层R子像素的有机材料层，从而使有机材料层在指定位置形成图案(pattern)。
重复以上步骤S21-S24，继续排版用于调节其他两种颜色(G子像素、B子像素)微腔效应的有机材料层，获得对应各个发光层子像素的不同厚度的有机材料层。
最后执行步骤S3，在获得各有机材料层上蒸镀上一层金属层作为第二阴极，得到如图4所示的OLED显示器件。从图4可以看出，该OLED显示器件与现有不同，包括第一阴极和第二阴极两层阴极。第二阴极与第一阴 极的材料可以相同也可以不同，一般采用镁、银、铝等金属或者它们的合金作为阴极材料。
与现有技术通过调整阳极和阴极之间的不同层厚度(需要使用精细金属掩模版)来调节微腔效应不同，本实施例的制作方法是在两层阴极之间采用对OLED材料没有影响的光刻工艺加入导电有机材料层，通过调整该层膜厚来增强微腔效应，该光刻工艺与制作CF和阳极的光刻工艺不同，不需要精细金属掩模版，从而节省了OLED制程工艺的时间和成本，增加了制作效率。
相应于本发明实施例一，本发明实施例二提供一种OLED器件，如图4所示，包括：
阳极，以及在阳极上依次蒸镀形成的空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及第一阴极；
在所述第一阴极上通过光刻形成对应发光层各个子像素、用于调节微腔效应的有机材料层；
在所述有机材料层上蒸镀形成的第二阴极。
其中，所述有机材料层通过以下方式形成：
在对应发光层子像素的位置设置光掩膜版，利用所述光掩膜版对所述负性光刻胶进行曝光、显影；
在所述负性光刻胶被显影液洗去的位置以及剩余的负性光刻胶上蒸镀一层用于调节微腔效应的有机材料层；
剥离所述剩余的负性光刻胶及其上的有机材料层，获得对应所述发光层子像素的有机材料层；
重复上述步骤直至获得对应发光层各个子像素的有机材料层。
其中，所述负性光刻胶含有氟元素取代的碳链结构。
其中，所述负性光刻胶具有光敏组分，所述光敏组分含有卤素溶剂、光致产酸剂化合物、包含至少一个含氟基团的单体与包含至少一个可酸解含酯基团的单体的共聚物。
其中，所述卤素溶剂为氢化氟醚或分离的氢化氟醚，所述共聚物为无规共聚物。
有关本实施例的实现原理和有益效果请参照本发明实施例一的说明，此 处不再赘述。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的范围。

Claims (10)

  1. 一种OLED器件的制作方法，包括：
    步骤S1，在阳极上依次蒸镀空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及第一阴极；
    步骤S2，在第一阴极上采用光刻形成对应发光层各个子像素、用于调节微腔效应的有机材料层；
    步骤S3，在所述有机材料层上蒸镀第二阴极。
  2. 根据权利要求1所述的制作方法，其中，所述步骤S2具体包括：
    步骤S21，在第一阴极上涂布一层可兼容有机材料的负性光刻胶；
    步骤S22，在对应发光层子像素的位置设置光掩膜版，利用所述光掩膜版对所述负性光刻胶进行曝光、显影；
    步骤S23，在所述负性光刻胶被显影液洗去的位置以及剩余的负性光刻胶上蒸镀一层用于调节微腔效应的有机材料层；
    步骤S24，剥离所述剩余的负性光刻胶及其上的有机材料层，获得对应所述发光层子像素的有机材料层；
    步骤S25，重复所述步骤S21-S24直至获得对应发光层各个子像素的有机材料层。
  3. 根据权利要求1所述的制作方法，其中，所述负性光刻胶含有氟元素取代的碳链结构。
  4. 根据权利要求1所述的制作方法，其中，所述负性光刻胶具有光敏组分，所述光敏组分含有卤素溶剂、光致产酸剂化合物、包含至少一个含氟基团的单体与包含至少一个可酸解含酯基团的单体的共聚物。
  5. 根据权利要求4所述的制作方法，其中，所述卤素溶剂为氢化氟醚或分离的氢化氟醚，所述共聚物为无规共聚物。
  6. 一种OLED器件，其中，包括：
    阳极，以及在阳极上依次蒸镀形成的空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及第一阴极；
    在所述第一阴极上通过光刻形成对应发光层各个子像素、用于调节微腔效应的有机材料层；
    在所述有机材料层上蒸镀形成的第二阴极。
  7. 根据权利要求6所述的OLED器件，其中，所述有机材料层通过以下方式形成：
    在对应发光层子像素的位置设置光掩膜版，利用所述光掩膜版对所述负性光刻胶进行曝光、显影；
    在所述负性光刻胶被显影液洗去的位置以及剩余的负性光刻胶上蒸镀一层用于调节微腔效应的有机材料层；
    剥离所述剩余的负性光刻胶及其上的有机材料层，获得对应所述发光层子像素的有机材料层；
    重复上述步骤直至获得对应发光层各个子像素的有机材料层。
  8. 根据权利要求6所述的OLED器件，其中，所述负性光刻胶含有氟元素取代的碳链结构。
  9. 根据权利要求6所述的OLED器件，其中，所述负性光刻胶具有光敏组分，所述光敏组分含有卤素溶剂、光致产酸剂化合物、包含至少一个含氟基团的单体与包含至少一个可酸解含酯基团的单体的共聚物。
  10. 根据权利要求9所述的OLED器件，其中，所述卤素溶剂为氢化氟醚或分离的氢化氟醚，所述共聚物为无规共聚物。
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