WO2019070665A1 - Motifs de dépôt dans la fabrication de réactifs - Google Patents

Motifs de dépôt dans la fabrication de réactifs Download PDF

Info

Publication number
WO2019070665A1
WO2019070665A1 PCT/US2018/053909 US2018053909W WO2019070665A1 WO 2019070665 A1 WO2019070665 A1 WO 2019070665A1 US 2018053909 W US2018053909 W US 2018053909W WO 2019070665 A1 WO2019070665 A1 WO 2019070665A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
mask
deposition
materials
electrode
Prior art date
Application number
PCT/US2018/053909
Other languages
English (en)
Inventor
Joseph A. Murray
Julie A. Morris
Tushar Tank
Original Assignee
Ih Ip Holdings Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ih Ip Holdings Limited filed Critical Ih Ip Holdings Limited
Publication of WO2019070665A1 publication Critical patent/WO2019070665A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for

Definitions

  • the present disclosure describes masking techniques used during vapor deposition for creating specific geometries of materials in the construction of reactant devices utilized in exothermic reactions.
  • the disclosed method can be used for the production of a cathode and/or anode for an exothermic reaction.
  • the geometry of the deposited material is key to the efficiency of the exothermic reactions.
  • electrolytic cells include a first electrode constructed from a transition metal (such as palladium or nickel), a second electrode constructed from an inert metal (such as gold or platinum), a working fluid (such as heavy water or deuterium gas), and an electrolyte (such as lithium deuteroxide).
  • a transition metal such as palladium or nickel
  • an inert metal such as gold or platinum
  • a working fluid such as heavy water or deuterium gas
  • an electrolyte such as lithium deuteroxide
  • the presently disclosed subject matter is directed to a method of forming a vapor-deposited film on a substrate.
  • the method comprises positioning a vapor deposition mask adjacent to a surface of a substrate, wherein the vapor deposition mask comprises a base and at least one aperture.
  • the method further comprises depositing a first deposition material on the vapor deposition mask, whereby at least a portion of the first deposition material that overlays the at least one aperture is deposited onto the surface of the substrate.
  • the method comprises repeating the depositing step with a desired number of subsequent deposition materials.
  • the mask is then removed to produce a substrate with a vapor deposited surface having a specific geometry comprising layers of the first deposition material and the subsequent deposition materials.
  • the first and subsequent deposition materials comprise one or more metals, alloys, isotopes, or combinations thereof. In some embodiments, the first and subsequent deposition materials are selected from one or more of 4 6Pd, 102 Pd, 104 Pd, 105 Pd, 106 Pd, 108 Pd, 110 Pd, 28 Ni, 58 Ni, 60 Ni, 61 Ni, 62 Ni, or 64 Ni.
  • the vapor deposition mask is positioned directly adjacent to the substrate surface.
  • an initial deposition material is deposited on the substrate prior to positioning the vapor deposition mask adjacent to a surface of the substrate.
  • the mask is held statically in an XY direction over the substrate during each deposition to create a columnar structure with one or more layers of deposition materials on the substrate surface.
  • the one or more layers of the columnar structure comprise one or more different deposition materials.
  • the method further comprises depositing a coating material on the vapor deposited surface of the substrate after the mask has been removed.
  • the mask can be moved over the surface of the substrate in the XY and Z directions during the depositing steps to produce an inter-layered structure with one or more layers of deposition materials on the substrate surface.
  • the presently disclosed subject matter is directed to a substrate formed by the disclosed method.
  • the substrate can be configured as a hydrogen-absorbing metallic electrode.
  • the presently disclosed subject matter is directed to a method of forming an electrode (such as a hydrogen-absorbing electrode), the method comprising positioning a vapor deposition mask adjacent to a surface of an electrode substrate, wherein the vapor deposition mask comprises a base and at least one aperture.
  • the method includes depositing a first deposition material on the vapor deposition mask, whereby at least a portion of the first deposition material that overlays the at least one aperture is deposited onto the surface of the electrode substrate.
  • the method comprises repeating the depositing step with a desired number of subsequent deposition materials, and removing the mask to produce an electrode with a vapor deposited surface having a specific geometry comprising layers of the first deposition material and the subsequent deposition materials.
  • the first and subsequent deposition materials comprise one or more metals, alloys, isotopes, or combinations thereof. In some embodiments, the first and subsequent deposition materials are selected from one or more of 46 Pd, 102 Pd, 104 Pd, 105 Pd, 106 Pd, 108 Pd, 110 Pd, 28 Ni, 58 Ni, 60 Ni, 61 Ni, 62 Ni, or 64 Ni.
  • the mask is held statically in an XY direction over the electrode substrate during each deposition to create a columnar structure with one or more layers of deposition materials on the substrate surface.
  • one or more layers of the columnar structure comprise one or more different deposition materials.
  • the method further comprises depositing a coating material on the vapor deposited surface of the electrode substrate after the mask has been removed.
  • the mask can be moved over the surface of the substrate in the XY and Z directions during the depositing steps to produce an inter-layered structure with one or more layers of deposition materials on the electrode substrate surface.
  • the presently disclosed subject matter is directed to the electrode formed by the disclosed method of claim.
  • the electrode can be configured as a hydrogen-absorbing metallic electrode.
  • Fig. 1 a is top plan view of a vapor deposition mask in accordance with some embodiments of the presently disclosed subject matter.
  • Fig. 1 b is a top plan view of the vapor deposition mask of Fig. 1 a comprising a support frame.
  • Fig. 2a is a top plan view of the mask of Fig. 1 and a corresponding substrate in accordance with some embodiments of the presently disclosed subject matter.
  • Fig. 2b is a side plan view of the mask and substrate of Fig. 2a.
  • Fig. 3a is a side plan view of a columnar, single material structure constructed on a substrate in accordance with some embodiments of the presently disclosed subject matter.
  • Fig. 3b is a side plan view of a columnar, multi-material structure constructed on a substrate in accordance with some embodiments of the presently disclosed subject matter.
  • Fig. 3c is a side plan view of a columnar, multi-material structure constructed on a substrate in accordance with some embodiments of the presently disclosed subject matter.
  • Fig. 3d is a side plan view of a columnar structure comprising a coating constructed on a substrate in accordance with some embodiments of the presently disclosed subject matter.
  • Fig. 4 is a side plan view of an inter-layered structure constructed on a substrate in accordance with some embodiments of the presently disclosed subject matter.
  • the term "about”, when referring to a value or to an amount of mass, weight, time, volume, concentration, and/or percentage can encompass variations of, in some embodiments +/-20%, in some embodiments +/-10%, in some embodiments +/-5%, in some embodiments +/-1 %, in some embodiments +/-0.5%, and in some embodiments +/-0.1 %, from the specified amount, as such variations are appropriate in the disclosed packages and methods.
  • the presently disclosed subject matter is directed to a method of producing devices for use in energy generation (e.g., electrodes for use in a reaction cell for exothermic reactions).
  • the disclosed method employs one or more masking techniques used during vapor deposition to create a specific desired substrate material geometry.
  • vapor deposition refers to the process of forming or depositing one or more materials onto a substrate through the vapor phase.
  • Typical vapor deposition processes include chemical vapor deposition (CVD) or physical vapor deposition (PVD).
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • a source material is vaporized (e.g., through the application of heat, plasma, electron beams, etc.) through physical action and is disposed on a substrate.
  • process parameters such as temperature, overall pressure, introduction of specific partial pressures, substrate, and the like allows the growth of specific films of pure metals and alloys.
  • process parameters such as temperature, overall pressure, introduction of specific partial pressures, substrate, and the like allows the growth of specific films of pure metals and alloys.
  • complex geometries can be created for devices.
  • the produced device can be utilized in a reaction cell to generate an exothermic reaction.
  • the specific geometry of the deposited material is key to the efficiency of the exothermic reaction.
  • Fig. 1 a illustrates one embodiment of a stencil mask that can be used in accordance with the disclosed method.
  • mask 5 comprises body 7 that includes one or more apertures 10.
  • the apertures are not limited and can be configured in any desired size or shape.
  • the apertures can be constructed in a square, rectangular, round, oval, triangular, trapezoidal, pentagonal, hexagonal, octagonal, abstract, etc. configuration.
  • each aperture 10 is of the same shape and/or size as at least one other aperture.
  • the presently disclosed subject matter also includes embodiments wherein each aperture differs in size and/or shape from the remainder of the apertures.
  • the mask is patterned, as shown in Fig. 1 .
  • the presently disclosed subject matter is not limited, and any patterned or non-patterned design can be used.
  • Mask 5 can be constructed from any rigid or semi-rigid material.
  • the term "rigid” refers to a material that has a high stiffness or modulus of elasticity. Thus, a rigid material holds a shape without external support and has a high resistance to deformation by external forces. In some embodiments, a suitable rigid material has a modulus of elasticity of about 150,000 psi or greater, determined according to ASTM D- 790, incorporated by reference herein.
  • the term “semi-rigid” refers to a material that holds a shape without external support, but exhibits higher flexibility when external forces are exerted thereon.
  • a suitable semi-rigid material can have a modulus of elasticity between about 20,000 - 150,000 psi, in accordance with ASTM D-790.
  • Any desired rigid or semi-rigid material can be used, such as (but not limited to) metal, polymeric material, ceramics, glass, plexiglass, wood, rubber, and combinations thereof.
  • mask 5 can include frame 6 or another support device to ensure that the mask is tensed during use, as shown in Fig. 1 b. Because the mask can be thinly formed and extensively patterned, the middle portion of the mask can sag or droop which can prevent an accurate vapor deposition (e.g., blurring can occur). Accordingly, coupling of the perimeter of the mask to frame 6 can ensure even deposition.
  • Support frame 6 can be constructed from any desired material, such as wood, metal, and the like. The coupling can occur through conventional methods, such as the use of an adhesive, laser welding, and the like.
  • Mask 5 can have any desired thickness, such as about 0.004 mm to about 0.2 mm.
  • the mask can have a thickness of at least about (or no more than about) 0.004, 0.005, 0.006, 0.007, 0.008, 0.009, 0.01 , 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.10, 0.11 , 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, or 0.2 mm.
  • the presently disclosed subject matter is not limited, and mask 5 can have a thickness greater than or less than the range given above.
  • Apertures 10 can be constructed using any known method.
  • a sharp cutting device e.g., knife, blade, scissors.
  • one or more of laser cutting, water-jet cutting, thermal cutting, drilling, etching, and the like can be used. It should be appreciated that any desired number of apertures can be configured in mask 5.
  • Mask 5 can be customized (e.g., size, shape, material) for a particular device. Particularly, a metal stencil mask can be used for larger substrates, while a photoresist mask can be selected for smaller resolution features. Mask 5 can further be customized based on size. For example, masks of micro-scale and nano-scale can be created if desired by the user.
  • mask 5 is positioned over substrate 15 during at least a portion of the vapor deposition process, as shown in Figs. 2a and 2b.
  • Any known vapor deposition process can be used, including (but not limited to) sputtering, reactive sputtering, evaporation deposition, atomic layer deposition, physical vapor deposition, and/or plasma spraying.
  • one or more materials e.g., metal
  • the body of the stencil covers the non-printed areas of the substrate.
  • the mask directly contacts substrate 10.
  • direct contact refers to a spatial relationship between two materials wherein each of the identified materials is in physical contact with the other.
  • the presently disclosed subject matter also includes embodiments wherein the mask indirectly contacts the substrate (e.g., contact though one or more intervening materials).
  • the mask can be held in a fixed position throughout the entire deposition process (e.g., through the deposition of one, several, or all layers).
  • mask 5 can be held statically in the XY direction (length and width) over substrate 10 using any element known or used in the art.
  • mechanical elements can be used, such as clips, closures, and the like to ensure that the mask does not move along a width or length of the substrate.
  • the substrate can be sized and/or shaped to be larger than mask 5.
  • the presently disclosed subject matter also includes embodiments wherein the substrate is configured to be about the same size or smaller than mask 5.
  • Substrate 15 can be any base material or construction upon which a layer (e.g., a metal-containing layer) can be deposited.
  • substrate 15 can include one or more semiconductor substrates, films, molded articles, fibers, wires, glasses, ceramics, machined metal parts, and the like.
  • semiconductor substrate refers to a semiconductor substrate such as a metal electrode (e.g., anode or cathode), base semiconductor layer, or a semiconductor substrate having one or more layers, structures, or regions formed thereon.
  • substrate 15 when configured as an electrode, can be constructed from a metal foil, a polymer (such as one or more polyimide, polyamide, polyetheretherketone, polyethersulfone, polyetherimide, polyethylene naphtalate, polyester, metallized plastic, and/or combinations thereof.
  • a polymer such as one or more polyimide, polyamide, polyetheretherketone, polyethersulfone, polyetherimide, polyethylene naphtalate, polyester, metallized plastic, and/or combinations thereof.
  • the substrate can include top surface 16 that can be planar as shown in Fig. 2b.
  • top surface 16 is not limited, and can include one or more topographical features.
  • the materials are deposited through mask 5 onto substrate 15.
  • the materials can include one or more metals.
  • metal refers to metals and/or alloys capable of vapor deposition, and can include one or more of aluminum, titanium, silicon, cobalt, niobium, chromium, platinum, palladium, gold, silver, cerium, nickel, copper, iron, indium, zinc, tantalum, tin, vanadium, tungsten, zirconium, molybdenum, and alloys and isotopes thereof.
  • the deposited materials can comprise palladium, nickel, and/or stable isotopes of palladium or nickel.
  • the deposited materials can include (but are not limited to) 46 Pd, 102 Pd, 104 Pd, 105 Pd, 106 Pd, 108 Pd, 110 Pd, 28 Ni, 58 Ni, 60 Ni, 61 Ni, 62 Ni, 64 Ni, or combinations thereof.
  • mask 5 can be held statically in the XY direction over substrate 15.
  • One or more materials can be deposited through the mask apertures creating a columnar structure with one or more layers.
  • the term "columnar structure” refers to an elongated shape that results from successive deposition of layers onto the substrate surface (e.g., columns of materials are produced).
  • the term "layer” refers to any metal- containing layer that can be formed on a substrate using a vapor deposition process.
  • the term “layer” refers to layers specific to the semiconductor industry, such as one or more barrier layers, dielectric layers, and/or conductive layers.
  • the term can also include layers found in technology outside of semiconductor technology, such as coatings on glass and the like. Vapor deposition therefore offers a solution for building complex geometries and multi-layer structures for high-volume devices used in energy generation.
  • first material 20 can be deposited directly onto substrate 15, through mask apertures 10. It should be appreciated that one or more different materials can be deposited on the substrate. For example, as shown in Fig. 3b, second and third materials 25, 30 can be further deposited onto the substrate, creating a columnar, multi-material structure. Thus, first material 20 can be deposited directly onto substrate 10. Second material 25 can be deposited directly onto the first material, and third material 30 is deposited directly onto the second material, as shown. In some embodiments, materials 20, 25, and/or 30 can each comprise a different material. In some embodiments, one or more of materials 20, 25, and/or 30 can be the same.
  • each material layer is not limited, and any desired thickness can be used.
  • the thickness of the material layers can range from about 10 nm to about 50 nm.
  • the thickness of materials 20, 25, and/or 30 can be at least about (or no more than about) 10, 15, 20, 25, 30, 35, 40, 45, or 50 nm.
  • the presently disclosed subject matter is not limited, and material thicknesses greater or less than the range set forth above can be used.
  • the thickness of each material deposited as the deposition layers in Fig. 3b can be about the same, or can differ as desired by the user.
  • first material 20 can be deposited on substrate 15 to create a base coating prior to positioning of the mask.
  • the mask can then be used to deposit second, third, and fourth materials, 25, 30, and 35 upon the base.
  • one or more coating materials 40 can be deposited over a particular deposition structure after mask 5 has been removed, as illustrated in Fig. 3d.
  • first material 20 e.g., a hydrogen-absorbing metal such as palladium
  • coating material 40 e.g., a hydrogen barrier material such as gold
  • hydrogen-absorbing as used herein can further refer to the characteristic of absorbing hydrogen and/or deuterium.
  • mask 5 can be moved over the substrate in the XY direction and/or the Z direction during the deposition process to create an inter-layered structure, as shown in Fig. 4.
  • a plurality of masks can be used to create the inter-layered structure.
  • layers with variable thicknesses can be created to provide a degree of surface roughness and/or an increase in surface area. Surface roughness is necessary for increasing both reactivity and efficiency in certain reactors.
  • the disclosed structure can be suitable for use with platinum group metals and/or nickel. Particularly, a stable isotope or combination of stable isotopes of such metals can be used.
  • the "XY" direction refers to the horizontal direction (such as the length and width of the substrate).
  • Z direction refers to the direction of fabrication (e.g., the direction in which layer are deposited on top of each other).
  • the thickness (or height) of the deposited material depends on the time the mask remains at a given position, shown by the equation below, where t(x) is the dwell time of the mask and is the longitudinal position of the mask.
  • a complex inter-layered structure of different materials 50, 55 can be constructed using multiple static masks and/or a single dynamic mask.
  • Such layered structures can be necessary for certain reactors, as the interface between materials can provide active reaction sites.
  • the efficiency can be altered as desired by the user.
  • ideal interfaces can therefore be maximized.
  • a layer of palladium-nickel material can be deposited to generate excess heat under certain conditions.
  • the overall interfacial area can be increased when compared to simply layering successive materials in the same pattern.
  • the produced device can have a wide variety of uses, such as (but not limited to) as a metallic electrodes for use in exothermic reactions.
  • electrode refers to an electrical conduction where ions and electrodes are exchanged with electrolyte and an outer circuit.
  • exothermic reaction refers to a reaction that generates heat. Particularly, an anode or cathode for use in an exothermic reaction can be produced.
  • anode refers to an electrode where electrochemical oxidation occurs.
  • cathode refers to an electrode where electrochemical reduction occurs. Typically, current enters the electrolytic cell through the anode and exits through the cathode.
  • the produced substrates offer several advantages over prior art substrates. For example, the increase in surface area provided by a complex structure as opposed to prior art flat, thin films allows for greater reactivity.
  • Mask lithography therefore provides an advantage for manufacturability as the mask may be reused and the material created does not require subsequent processing. Using deposition processes to prepare the devices further allows for better control of purity and morphology.
  • control of process parameters and the clean environment allow for better precision and reproducibility in the manufacture of the produced devices.
  • increasing the surface area of reactants further provide better efficiency.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé de production de dispositifs destinés à être utilisés dans la production d'énergie (par exemple des électrodes métalliques destinées à être utilisées dans une cellule à réaction). En particulier, le procédé décrit a recours à une ou plusieurs techniques de masquage utilisées pendant le dépôt en phase vapeur pour créer un motif de matériau de substrat de la forme spécifique voulue. Une régulation minutieuse des paramètres de processus tels que la température, la pression globale, l'introduction de pressions partielles spécifiques, le substrat et analogues permet la croissance de films spécifiques d'alliages et de métaux purs. Les dispositifs produits (par exemple des électrodes métalliques revêtues ) peuvent être utilisés dans une cellule à réaction pour générer une réaction exothermique. La forme spécifique du matériau déposé est essentielle à l'efficacité de la réaction exothermique.
PCT/US2018/053909 2017-10-04 2018-10-02 Motifs de dépôt dans la fabrication de réactifs WO2019070665A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762567931P 2017-10-04 2017-10-04
US62/567,931 2017-10-04

Publications (1)

Publication Number Publication Date
WO2019070665A1 true WO2019070665A1 (fr) 2019-04-11

Family

ID=65994827

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2018/053909 WO2019070665A1 (fr) 2017-10-04 2018-10-02 Motifs de dépôt dans la fabrication de réactifs

Country Status (1)

Country Link
WO (1) WO2019070665A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002024321A1 (fr) * 2000-09-22 2002-03-28 General Electric Company Systemes et procedes de revetements combinatoires
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
WO2017127423A2 (fr) * 2015-12-04 2017-07-27 Ih Ip Holdings Limited Procédés et appareil de déclenchement de réactions exothermiques

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002024321A1 (fr) * 2000-09-22 2002-03-28 General Electric Company Systemes et procedes de revetements combinatoires
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
WO2017127423A2 (fr) * 2015-12-04 2017-07-27 Ih Ip Holdings Limited Procédés et appareil de déclenchement de réactions exothermiques

Similar Documents

Publication Publication Date Title
CN107107528B (zh) 具有桁架芯体的弯曲高温合金夹层板和制造方法
KR20050072150A (ko) 막 전극 어셈블리를 위한 촉매
Malandrino et al. Free-standing copper (II) oxide nanotube arrays through an MOCVD template process
US20080085439A1 (en) Solid oxide electrolytic device
CN102016127A (zh) 纳米线结构元件
EP3593370B1 (fr) Supercondensateur incorporé à une puce à nanostructure de silicium
Chu et al. A new electrochemical lithography: Fabrication of self-organized titania nanostructures on glass by combined anodization
KR101682501B1 (ko) 은 나노와이어 패턴층 및 그래핀층을 포함하는 투명전극 및 그 제조방법
Garcia-Taormina et al. A review of coated nano-and micro-lattice materials
Ren et al. Localized electrodeposition micro additive manufacturing of pure copper microstructures
Yarlagadda et al. High surface area carbon electrodes for bromine reactions in H2-Br2 fuel cells
CN115398217A (zh) 电极
Gao et al. Synthesis and electrochemical properties of nanoporous CrN thin film electrodes for supercapacitor applications
WO2019070665A1 (fr) Motifs de dépôt dans la fabrication de réactifs
CN108806819A (zh) 一种x射线波带片的制备方法
US20180371631A1 (en) Exposed segmented nanostructure arrays
CN109643192A (zh) 导电性薄膜、触摸面板传感器及触摸面板
Zdorovets et al. Study of irradiation effect of Xe+ 22 and Kr+ 14 ions on structural properties of Zn nanotubes
Mateen et al. Controlled Fabrication of Wafer-Scale Zigzag Silicon Nanowire Arrays by Metal-Assisted Chemical Etching through Synergistic Effect of Viscosity and Temperature
El-Kholi et al. Alternative resist adhesion and electroplating layers for LIGA process
Khare et al. Synthesis of WO3 nanoblades by the dealloying of glancing angle deposited W-Fe nanocolumnar thin films
CN108520791A (zh) 一种x射线波带片及其制备方法
Ensinger Formation of nanopore membranes and nanowires by high energy ion irradiation of polymer foils
Tiginyanu et al. Template assisted formation of metal nanotubes
KR101439788B1 (ko) 전기화학적 방법을 이용한 3차원 탄소나노튜브 네트워크 기반의 금속 또는 산화금속 나노구조체

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18864428

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18864428

Country of ref document: EP

Kind code of ref document: A1