WO2019065441A1 - Transfer substrate and transfer method - Google Patents
Transfer substrate and transfer method Download PDFInfo
- Publication number
- WO2019065441A1 WO2019065441A1 PCT/JP2018/034789 JP2018034789W WO2019065441A1 WO 2019065441 A1 WO2019065441 A1 WO 2019065441A1 JP 2018034789 W JP2018034789 W JP 2018034789W WO 2019065441 A1 WO2019065441 A1 WO 2019065441A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- main surface
- transfer
- semiconductor chip
- transfer substrate
- substrate
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
- Led Device Packages (AREA)
Abstract
The present invention addresses the problem of alleviating impact during transfer and transferring a semiconductor chip with high accuracy. Particularly, a transfer substrate 10 for receiving the transfer of a semiconductor chip S from a transfer-source substrate and holding the semiconductor chip to transfer the semiconductor chip to the transfer-destination substrate is characterized by comprising at least: a base material 1 having a first main surface 1a and a second main surface 1b; and an impact absorbing layer 2 for absorbing the impact during the transfer of the semiconductor chip S, the impact absorbing layer being provided such that the first main surface 1a of the base material 1 is in contact with the second main surface 1b.
Description
本発明は、半導体チップを高精度に転写するための転写基板、及び転写方法に関するものである。
The present invention relates to a transfer substrate for transferring a semiconductor chip with high accuracy, and a transfer method.
半導体チップは、コスト低減のために小型化が進み、高速・高精度に実装するための取組みが行われている。特に、ディスプレイに用いられるＬＥＤはマイクロＬＥＤと呼ばれる５０μm×５０μm以下のＬＥＤチップを数μmの精度で高速に実装することが求められている。
Semiconductor chips are being miniaturized for cost reduction, and efforts are being made to mount them at high speed with high precision. In particular, an LED used for a display is required to rapidly mount a 50 μm × 50 μm or less LED chip called a micro LED with an accuracy of several μm.
特許文献１には、ウェハに格子状に形成されたＬＥＤチップに帯状のレーザ光を照射して１ラインまたは複数ラインごとに一括して転写基板２００に転写したのち、転写基板２００に転写された後の複数のＬＥＤチップに帯状のレーザ光を照射して１ラインまたは複数ラインごとに転写基板３００に一括して転写する構成が記載されている。
In Patent Document 1, LED chips formed in a grid shape on a wafer are irradiated with a band-like laser beam and collectively transferred onto a transfer substrate 200 for one line or multiple lines, and then transferred onto a transfer substrate 200. A configuration is described in which a plurality of LED chips are irradiated with a band-like laser beam to be collectively transferred to the transfer substrate 300 for each line or a plurality of lines.
特許文献１：特開２０１０－１６１２２１号公報
Patent Document 1: Japanese Unexamined Patent Application Publication No. 2010-161221
しかしながら、特許文献１記載のものは、転写するときに、ＬＥＤチップが転写基板に衝突して破砕や位置ずれが起こるという問題があった。
However, the one described in Patent Document 1 has a problem that the LED chip collides with the transfer substrate when transferring to cause breakage or misalignment.
本発明は、上記問題点を解決して、転写時の衝撃を緩和して高精度に半導体チップを転写することを課題とする。
An object of the present invention is to solve the above-mentioned problems and to transfer a semiconductor chip with high accuracy by alleviating an impact at the time of transfer.
上記課題を解決するために本発明は、レーザ光の照射により、転写元基板から半導体チップを転写されるとともに、半導体チップを保持して転写先基板に転写するための転写基板であって、
第１主面と第２主面とを有した基材と、
前記基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための衝撃吸収層と、を少なくとも備えたことを特徴とする転写基板を提供するものである。 In order to solve the above problems, the present invention is a transfer substrate for transferring a semiconductor chip from a transfer source substrate by laser light irradiation and for holding the semiconductor chip and transferring it to a transfer destination substrate,
A substrate having a first main surface and a second main surface,
A transfer substrate comprising at least a shock absorbing layer provided on a first main surface of the substrate in contact with a second main surface, for absorbing an impact at the time of transfer of a semiconductor chip. It is a thing.
第１主面と第２主面とを有した基材と、
前記基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための衝撃吸収層と、を少なくとも備えたことを特徴とする転写基板を提供するものである。 In order to solve the above problems, the present invention is a transfer substrate for transferring a semiconductor chip from a transfer source substrate by laser light irradiation and for holding the semiconductor chip and transferring it to a transfer destination substrate,
A substrate having a first main surface and a second main surface,
A transfer substrate comprising at least a shock absorbing layer provided on a first main surface of the substrate in contact with a second main surface, for absorbing an impact at the time of transfer of a semiconductor chip. It is a thing.
この構成により、転写時の衝撃を緩和して高精度に半導体チップを転写することができる。
According to this configuration, it is possible to transfer the semiconductor chip with high accuracy by reducing the impact at the time of transfer.
半導体チップを保持するチップ固定層を前記衝撃吸収層の第１主面に第２主面を接して設けた構成としてもよい。
The chip fixing layer for holding the semiconductor chip may be provided in contact with the first main surface of the shock absorbing layer with the second main surface.
この構成により、粘着性に乏しい衝撃吸収層であってもチップ固定層により確実に半導体チップを保持することができる。
With this configuration, even if the shock absorbing layer has poor adhesiveness, the semiconductor chip can be reliably held by the chip fixing layer.
また、上記課題を解決するために本発明は、半導体チップを転写する転写方法であって、
第１主面と第２主面とを有した第１基材と、前記第１基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第１衝撃吸収層と、を少なくとも備えた第１転写基板を準備する第１転写基板準備工程と、
第１主面と第２主面とを有した第２基材と、前記第２基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第２衝撃吸収層と、を少なくとも備えた第２転写基板を準備する第２転写基板準備工程と、
前記第１転写基板における前記第１衝撃吸収層の第１主面に半導体チップを保持させる半導体チップ保持工程と、
前記第１転写基板における前記第１衝撃吸収層の第１主面と、前記第２転写基板における前記第２衝撃吸収層の第１主面とを対向するように配置する転写基板配置工程と、
前記第１転写基板における前記第１基材の第２主面側からレーザ光を照射して、前記第１衝撃吸収層の第１主面から半導体チップを分離して前記第２転写基板の前記第２衝撃吸収層の第１主面に転写する転写工程と、を備えたことを特徴とする転写方法を提供するものである。 Further, in order to solve the above problems, the present invention is a transfer method for transferring a semiconductor chip,
A first base material having a first main surface and a second main surface, and an impact at the time of transfer of a semiconductor chip provided with the second main surface being in contact with the first main surface of the first base material Providing a first transfer substrate having at least a first shock absorbing layer for forming a first transfer substrate;
A second base material having a first main surface and a second main surface, and an impact at the time of transfer of a semiconductor chip provided with the second main surface being in contact with the first main surface of the second base material Preparing a second transfer substrate having at least a second shock absorbing layer for forming a second transfer substrate;
A semiconductor chip holding step of holding a semiconductor chip on a first main surface of the first shock absorbing layer in the first transfer substrate;
A transfer substrate disposing step of disposing a first main surface of the first impact absorption layer in the first transfer substrate and a first main surface of the second impact absorption layer in the second transfer substrate;
A laser beam is irradiated from the side of the second main surface of the first base material in the first transfer substrate to separate the semiconductor chip from the first main surface of the first impact absorption layer, and the second transfer substrate is And a transfer step of transferring to the first principal surface of the second impact absorption layer.
第１主面と第２主面とを有した第１基材と、前記第１基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第１衝撃吸収層と、を少なくとも備えた第１転写基板を準備する第１転写基板準備工程と、
第１主面と第２主面とを有した第２基材と、前記第２基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第２衝撃吸収層と、を少なくとも備えた第２転写基板を準備する第２転写基板準備工程と、
前記第１転写基板における前記第１衝撃吸収層の第１主面に半導体チップを保持させる半導体チップ保持工程と、
前記第１転写基板における前記第１衝撃吸収層の第１主面と、前記第２転写基板における前記第２衝撃吸収層の第１主面とを対向するように配置する転写基板配置工程と、
前記第１転写基板における前記第１基材の第２主面側からレーザ光を照射して、前記第１衝撃吸収層の第１主面から半導体チップを分離して前記第２転写基板の前記第２衝撃吸収層の第１主面に転写する転写工程と、を備えたことを特徴とする転写方法を提供するものである。 Further, in order to solve the above problems, the present invention is a transfer method for transferring a semiconductor chip,
A first base material having a first main surface and a second main surface, and an impact at the time of transfer of a semiconductor chip provided with the second main surface being in contact with the first main surface of the first base material Providing a first transfer substrate having at least a first shock absorbing layer for forming a first transfer substrate;
A second base material having a first main surface and a second main surface, and an impact at the time of transfer of a semiconductor chip provided with the second main surface being in contact with the first main surface of the second base material Preparing a second transfer substrate having at least a second shock absorbing layer for forming a second transfer substrate;
A semiconductor chip holding step of holding a semiconductor chip on a first main surface of the first shock absorbing layer in the first transfer substrate;
A transfer substrate disposing step of disposing a first main surface of the first impact absorption layer in the first transfer substrate and a first main surface of the second impact absorption layer in the second transfer substrate;
A laser beam is irradiated from the side of the second main surface of the first base material in the first transfer substrate to separate the semiconductor chip from the first main surface of the first impact absorption layer, and the second transfer substrate is And a transfer step of transferring to the first principal surface of the second impact absorption layer.
この構成により、転写時の衝撃を緩和して高精度に半導体チップを転写することができる。
According to this configuration, it is possible to transfer the semiconductor chip with high accuracy by reducing the impact at the time of transfer.
さらに、上記課題を解決するために本発明は、半導体チップを転写する転写方法であって、 第１主面と第２主面とを有した第１基材と、前記第１基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第１衝撃吸収層と、前記第１衝撃吸収層の第１主面に第２主面を接して設けた、半導体チップを保持するための第１チップ固定層と、を備えた第１転写基板を準備する第１転写基板準備工程と、 第１主面と第２主面とを有した第２基材と、前記第２基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第２衝撃吸収層と、前記第２衝撃吸収層の第１主面に第２主面を接して設けた、半導体チップを保持するための第２チップ固定層と、を備えた第２転写基板を準備する第２転写基板準備工程と、前記第１転写基板における前記第１チップ固定層の第１主面に半導体チップを保持させる半導体チップ保持工程と、前記第１転写基板における前記第１チップ固定層の第１主面と、前記第２転写基板における前記第２チップ固定層の第１主面とを対向するように配置する転写基板配置工程と、前記第１転写基板における前記第１基材の第２主面側からレーザ光を照射して、半導体チップを分離して前記第２転写基板の前記第２チップ固定層の第１主面に転写する転写工程と、を備えたことを特徴とする転写方法を提供するものである。
Furthermore, in order to solve the above problems, the present invention is a transfer method for transferring a semiconductor chip, comprising: a first base material having a first main surface and a second main surface; A first shock absorbing layer provided on one main surface in contact with the second main surface for relieving shock during transfer of the semiconductor chip, and a second main surface on the first main surface of the first shock absorbing layer A first transfer substrate preparing step of preparing a first transfer substrate provided with a first chip fixing layer for holding a semiconductor chip, and a first main surface and a second main surface A second base material, a second impact absorbing layer provided on the first main surface of the second base material in contact with the second main surface, for reducing an impact at the time of transfer of the semiconductor chip, and the second impact A second transfer substrate provided with a second main surface in contact with the first main surface of the absorption layer, and a second chip fixing layer for holding a semiconductor chip; A second transfer substrate preparing step, a semiconductor chip holding step of holding a semiconductor chip on the first main surface of the first chip fixing layer in the first transfer substrate, and the first chip fixing layer in the first transfer substrate A transfer substrate disposing step of arranging the first main surface of the second transfer substrate and the first main surface of the second chip fixing layer of the second transfer substrate to face each other, and the first base material of the first transfer substrate And d) transferring the laser light from the second main surface side to separate the semiconductor chip and transferring the separated semiconductor chip onto the first main surface of the second chip fixing layer of the second transfer substrate. Provides a transfer method.
この構成により、転写時の衝撃を緩和して高精度に半導体チップを転写することができる。
According to this configuration, it is possible to transfer the semiconductor chip with high accuracy by reducing the impact at the time of transfer.
本発明の転写基板、及び転写方法により、転写時の衝撃を緩和して高精度に半導体チップを転写することができる。
By the transfer substrate and transfer method of the present invention, it is possible to transfer the semiconductor chip with high precision by alleviating the impact at the time of transfer.
本発明の実施例１について、図１～図３を参照して説明する。
A first embodiment of the present invention will be described with reference to FIGS. 1 to 3.
図１は、本発明の実施例１における転写基板の断面を説明する図である。図２は、本発明の実施例１における半導体チップ保持工程を説明する図で、（ａ）は平面図、（ｂ）は側面断面図である。図３は、本発明の実施例１における転写工程を説明する図である。
FIG. 1 is a view for explaining a cross section of a transfer substrate in Example 1 of the present invention. FIG. 2 is a view for explaining the semiconductor chip holding step in the first embodiment of the present invention, in which (a) is a plan view and (b) is a side sectional view. FIG. 3 is a view for explaining the transfer process in Example 1 of the present invention.
（転写基板） 本発明における転写基板は、レーザ光の照射により、転写元基板から半導体チップを転写されるとともに、半導体チップを保持して転写先基板に転写するためのものであり、繰り返して転写に使用することができる。
(Transfer substrate) The transfer substrate in the present invention is for transferring the semiconductor chip from the transfer source substrate by the irradiation of the laser light and for holding the semiconductor chip and transferring it to the transfer destination substrate. It can be used for
実施例１における転写基板１０は、図１に示すように、基材１の第１主面１ａに第２主面２ｂが接して衝撃吸収層２が設けられている。基材１はガラスからなり、平面視略四角形からなり０．７ｍｍの厚みを有している。また、衝撃吸収層２は、シリコーン樹脂からなり平面視で基材１全体に広がり、約２０μmの厚みを有している。この衝撃吸収層２が設けられていることにより、レーザ光照射により半導体チップＳが転写元基板から転写基板１０に付勢されて転写されるときの衝撃を緩和して半導体チップＳの破砕や位置ずれを防ぐことができる。
In the transfer substrate 10 in Example 1, as shown in FIG. 1, the impact absorption layer 2 is provided with the second major surface 2 b in contact with the first major surface 1 a of the base 1. The base material 1 is made of glass, has a substantially rectangular shape in plan view, and has a thickness of 0.7 mm. The impact absorbing layer 2 is made of silicone resin and spreads over the entire substrate 1 in a plan view, and has a thickness of about 20 μm. By providing the shock absorbing layer 2, the impact when the semiconductor chip S is urged from the transfer source substrate to the transfer substrate 10 and transferred by the laser light irradiation is alleviated, and the semiconductor chip S is crushed or positioned. Deviation can be prevented.
すなわち、サファイアからなるキャリア基板５０に形成されたマイクロＬＥＤなどの半導体チップＳは、サファイア基板の裏面からレーザ光Ｌを照射して、キャリア基板５０と半導体チップＳとの界面におけるＧａＮ層の一部をＧａとＮ２（窒素）に分解させて半導体チップＳを分離させる（図２参照）。
That is, a semiconductor chip S such as a micro LED formed on the carrier substrate 50 made of sapphire is irradiated with the laser light L from the back surface of the sapphire substrate to partially form a GaN layer at the interface between the carrier substrate 50 and the semiconductor chip S Is decomposed into Ga and N2 (nitrogen) to separate the semiconductor chip S (see FIG. 2).
ここで、ＧａＮをＧａと窒素に分解するためには、レーザ光はＧａＮに吸収される波長である必要がある。すなわち、ＧａＮのエネルギーギャップ３．４ｅＶに相当する３６５ｎｍよりも短波長を発信するレーザ光Ｌが照射される。ただし、この波長はＧａＮに該当するもので、実際のＬＥＤではＩｎやＡｌをドープされたものや、主成分がＧａＮとは異なるものもあり、それらのエネルギーギャップはＧａＮと異なる。そのため、レーザ光Ｌの波長は半導体チップＳの素材のエネルギーギャップに応じて選択する必要がある。
Here, in order to decompose GaN into Ga and nitrogen, the laser light needs to have a wavelength absorbed by GaN. That is, the laser light L emitting a shorter wavelength than 365 nm corresponding to the energy gap of 3.4 eV of GaN is irradiated. However, this wavelength corresponds to GaN, and in an actual LED, In or Al is doped, and the main component is different from GaN, and their energy gap is different from GaN. Therefore, it is necessary to select the wavelength of the laser light L according to the energy gap of the material of the semiconductor chip S.
レーザ光Ｌを照射して、キャリア基板５０と半導体チップＳとの界面におけるＧａＮ層の一部をＧａとＮに分解させて半導体チップＳを分離させる手法は、レーザリフトオフと呼ばれている。この分離の際には、窒素からなるガスが発生することから、転写先の転写基板１０に向かって激しく勢いを付けられる。この激しく勢いを付けられた半導体チップＳは、転写基板に激突することにより、破砕したり、転写位置がずれたりすることがある。このため、前述のように、転写基板１０には衝撃吸収層２を設けている。
A method of separating the semiconductor chip S by irradiating a laser beam L to decompose a part of the GaN layer at the interface between the carrier substrate 50 and the semiconductor chip S into Ga and N is called laser lift-off. At the time of this separation, a gas consisting of nitrogen is generated, so that the transfer substrate 10 is strongly urged toward the transfer destination. The violently driven semiconductor chip S may be broken or the transfer position may be shifted due to the collision with the transfer substrate. Therefore, as described above, the transfer substrate 10 is provided with the shock absorbing layer 2.
なお、実施例１においては、衝撃吸収層２をシリコーン樹脂で構成したが、必ずしもこれに限定されず、都合により適宜変更することができる。例えば、アクリル系樹脂で構成してもよいし、シリコーン発泡体で構成してもよく、少なくともレーザ光Ｌが透過し、クッション性を備えていればよい。
In addition, in Example 1, although the impact-absorbing layer 2 was comprised with the silicone resin, it is not necessarily limited to this and can be suitably changed by circumstances. For example, it may be composed of an acrylic resin or silicone foam, and it is sufficient if at least laser light L is transmitted and it has a cushioning property.
衝撃吸収層２のクッション性は反発式硬度計によるリーブ硬さで表現され、基材１のリーブ硬さを１００としたとき基材１上に形成した衝撃吸収層２のリーブ硬さは５０～９０が好ましい。５０未満では転写の際に衝撃吸収層２が弾性変形し衝撃吸収層２の形状回復に時間がかかる恐れがあるので好ましくなく、９０を超えると衝撃吸収性が弱く、半導体チップＳは粉砕する恐れがあるので不適である。ここでいうリーブ硬さは反発式ポータブル硬度計（ミツトヨ製ＨＨ－４１１）を用いて評価した。石定盤上に衝撃吸収層２を形成した基材１を置き、衝撃吸収層２面上に垂直になるように検出器を設置し測定した。１つのサンプルにつき３回測定し、平均値をリーブ硬さとして表現した。また、衝撃吸収層２のレーザ光Ｌの透過性は４０％以上あればよい。レーザ光Ｌの透過性は４０％未満の場合、レーザ光Ｌを吸収してしまい第１衝撃吸収層が変質してしまう恐れがあるので不適である。
The cushioning property of the shock absorbing layer 2 is expressed by the leave hardness by a repulsion hardness tester, and when the leave hardness of the substrate 1 is 100, the leave hardness of the shock absorbing layer 2 formed on the substrate 1 is 50 to 50 90 is preferred. If it is less than 50, it is not preferable because the impact absorption layer 2 may be elastically deformed during transfer and it may take time to recover the shape of the impact absorption layer 2. If it exceeds 90, the impact absorption is weak and the semiconductor chip S may be crushed It is inappropriate because there is. The leave hardness referred to here was evaluated using a rebound type portable hardness tester (Mittoyo HH-411). The base material 1 having the shock absorbing layer 2 formed thereon was placed on a stone surface plate, and a detector was placed vertically on the surface of the shock absorbing layer 2 and measured. Three measurements were made per sample, and the mean value was expressed as leave hardness. Further, the transmittance of the laser light L of the shock absorbing layer 2 may be 40% or more. If the transmittance of the laser light L is less than 40%, the laser light L may be absorbed and the first shock absorbing layer may be degraded, which is not suitable.
また、衝撃吸収層の粘着性が乏しい場合は、後述するように、半導体チップＳを保持させるための粘着性を有したチップ固定層を積層することが望ましいが、これは必ずしも必須ではなく、静電吸着の手段による半導体チップＳを保持するようにしてもよい。すなわち、転写基板１０には、少なくとも衝撃吸収層２を備えていればよい。
In addition, when the adhesion of the shock absorbing layer is poor, it is desirable to laminate a chip fixing layer having adhesiveness for holding the semiconductor chip S, as described later, but this is not necessarily essential. The semiconductor chip S may be held by means of electrostatic adsorption. That is, the transfer substrate 10 may be provided with at least the shock absorbing layer 2.
さらに、実施例１においては、基材１をガラスで構成したが、必ずしもこれに限定されず、都合により適宜変更することができる。例えば、サファイアで構成してもよいし、樹脂フィルムで構成してもよく、少なくともレーザ光が透過すればよい。
Furthermore, in Example 1, although the base material 1 was comprised with glass, it is not necessarily limited to this and can be suitably changed by convenience. For example, it may be made of sapphire or a resin film, and at least laser light may be transmitted.
また、実施例１においては、基材１の厚さを０．７ｍｍとし、衝撃吸収層２の厚さを２０μmとしたが、必ずしもこれに限定されず適宜変更が可能である。例えば、基材１の厚さを０．８ｍｍ以上としてもよいし、０．６ｍｍ以下としてもよい。また、衝撃吸収層２の厚さは５～３００μm程度であってよい。すなわち、厚み５μm未満では半導体チップの衝撃を吸収しきれず半導体チップＳが粉砕する恐れがあるため不適であり、３００μmより厚いと半導体チップSの保持後、転写先の基板へレーザリフトオフする場合、衝撃吸収層が有している光吸収性のためレーザ光を吸収し衝撃吸収層を変質し転写できなくなる恐れがあるため不適である。
Moreover, in Example 1, although the thickness of the base material 1 was 0.7 mm and the thickness of the impact-absorbing layer 2 was 20 micrometers, it is not necessarily limited to this and an appropriate change is possible. For example, the thickness of the substrate 1 may be 0.8 mm or more, or may be 0.6 mm or less. Further, the thickness of the shock absorbing layer 2 may be about 5 to 300 μm. That is, if the thickness is less than 5 μm, the impact of the semiconductor chip can not be absorbed and the semiconductor chip S may be crushed. If the thickness is more than 300 μm, the laser lift off to the transfer destination substrate after holding the semiconductor chip S is an impact. Since the light absorbing property of the absorbing layer absorbs the laser light, the impact absorbing layer may be altered to be unable to be transferred, which is not suitable.
（転写方法） まず、第１転写基板準備工程を実行し、第１主面１ａと第２主面１ｂとを有した第１基材１と、第１基材の第１主面１ａに第２主面２ｂを接して設けた第１衝撃吸収層２と、を備えた第１転写基板１０を準備する。また、同様に、第２転写基板準備工程を実行して、第１主面１０１ａと第２主面１０１ｂとを有した第２基材１０１と、第２基材１０１の第１主面１０１ａに第２主面１０２ｂを接して設けた第２衝撃吸収層１０２と、を備えた第２転写基板１１０を準備する。
(Transfer Method) First, the first transfer substrate preparation step is performed, and the first base 1 having the first main surface 1a and the second main surface 1b, and the first main surface 1a of the first base are first processed. A first transfer substrate 10 provided with a first impact absorption layer 2 provided in contact with the two major surfaces 2b is prepared. Similarly, the second transfer substrate preparation step is performed to form the second base material 101 having the first main surface 101a and the second main surface 101b and the first main surface 101a of the second base material 101. A second transfer substrate 110 including a second shock absorbing layer 102 provided in contact with the second major surface 102 b is prepared.
第１転写基板１０及び第２転写基板１１０の平面サイズは、必要数の半導体チップＳを保持可能な大きさを有していればよく、厚みが０．７ｍｍ程度のガラスで構成してよい。また、第１衝撃吸収層２及び第２衝撃吸収層１０２は、シリコーン樹脂で構成してよく、20μm以上の厚みを有していればよい。シリコーン樹脂は、衝撃吸収性を有しているとともに、粘着性があり、転写時の半導体チップの衝撃を吸収するとともに、確実に保持することができる。
The planar sizes of the first transfer substrate 10 and the second transfer substrate 110 may be made of glass having a thickness of about 0.7 mm as long as they can hold the required number of semiconductor chips S. In addition, the first impact absorbing layer 2 and the second impact absorbing layer 102 may be made of silicone resin and may have a thickness of 20 μm or more. The silicone resin has impact absorption properties, is adhesive, absorbs the impact of the semiconductor chip at the time of transfer, and can be reliably held.
なお、第１衝撃吸収層２及び第２衝撃吸収層１０２の粘着性は粘着力で表現され、粘着力は０．０５～５ｍＮ程度であることが好ましい。すなわち、粘着力０．０５ｍＮ未満では粘着力が弱く、転写時に半導体チップＳが衝撃で位置ずれしてしまう恐れがあるため不適である。また、５ｍＮより厚いと半導体チップ保持後、第２転写基板へレーザリフトオフする場合、粘着力が強すぎるため完全に剥離できない恐れがあるため好ましくない。ここでいう粘着力は薄膜機械的特性評価装置（米国 ナノメカ二クス社製iNano 型ナノインデンターシステム）を用いて圧子径φ２０ｕｍ、最大印加荷重１０ｍＮ、最大印加荷重到達時間５秒、最大印加荷重保持時間２秒で評価した。１つのサンプルにつき１０回測定し、平均値を粘着力として表示したものである。
The adhesiveness of the first impact absorbing layer 2 and the second impact absorbing layer 102 is expressed by adhesive force, and the adhesive force is preferably about 0.05 to 5 mN. That is, if the adhesive force is less than 0.05 mN, the adhesive force is weak, and there is a possibility that the semiconductor chip S may be displaced due to an impact at the time of transfer, which is not suitable. On the other hand, if the thickness is more than 5 mN, the laser lift-off to the second transfer substrate after holding the semiconductor chip is not preferable because the adhesive force is too strong and there is a possibility that the peeling can not be completed completely. The adhesion here refers to the indenter diameter φ 20 um, maximum applied load 10 mN, maximum applied load arrival time 5 seconds, maximum applied load retention using a thin film mechanical property evaluation device (iNano type nano indenter system manufactured by Nanomechanics, USA) The time was evaluated in 2 seconds. Ten measurements were made per sample, and the average value was expressed as the adhesive force.
次に、半導体チップ保持工程を実行して、第１転写基板１０における第１衝撃吸収層２の第１主面２ａに半導体チップＳを保持させる。すなわち、図２に示すように、サファイアからなるキャリア基板５０の複数の半導体チップＳを形成した面と第１転写基板１０における第１衝撃吸収層２の第１主面２ａとを対向させ、キャリア基板５０の裏側からレーザ光Ｌをライン状に照射しながら移動させて、キャリア基板５０に保持されている全ての半導体チップＳを第１転写基板１０における第１衝撃吸収層２の第１主面２ａに半導体チップＳを保持させる。
Next, the semiconductor chip holding step is performed to hold the semiconductor chip S on the first major surface 2 a of the first impact absorption layer 2 in the first transfer substrate 10. That is, as shown in FIG. 2, the surface of the carrier substrate 50 made of sapphire on which the plurality of semiconductor chips S are formed and the first main surface 2a of the first impact absorption layer 2 of the first transfer substrate 10 are opposed to each other. The laser light L is moved from the back side of the substrate 50 in a line while being moved to move all the semiconductor chips S held by the carrier substrate 50 to the first main surface of the first impact absorption layer 2 in the first transfer substrate 10 The semiconductor chip S is held by 2a.
すなわち、サファイアからなるキャリア基板５０におけるＧａＮ層の一部をレーザ光Ｌ照射によってＧａと窒素に分解させて、半導体チップＳを分離し第１転写基板１０に向かって付勢させるものである。この手法はレーザリフトオフと呼ばれ、分離した半導体チップＳは、ＧａＮが分解されるときに窒素からなるガスが発生することにより付勢され第１転写基板１０に転写される。
That is, a part of the GaN layer in the carrier substrate 50 made of sapphire is decomposed into Ga and nitrogen by the laser light L irradiation to separate the semiconductor chip S and urge it toward the first transfer substrate 10. This method is called laser lift-off, and the separated semiconductor chip S is energized by generating a gas consisting of nitrogen when the GaN is decomposed, and is transferred to the first transfer substrate 10.
ところで、前述のとおりＧａＮの分解では、３６５ｎｍよりも短波長である必要がある。このため、通常はレーザ光源として紫外光を発するエキシマレーザを使用ところであるが、実施例１においては取り扱いが容易なＹＡＧレーザを用いている。ただし、ＹＡＧレーザの発信波長は１０６４ｎｍと赤外域の長波長であるため、非線形光学結晶と組合せて、第３高調波（波長３５５ｎｍ）または第４高調波（波長２６６ｎｍ）をレーザ光Ｌとして利用している。なお、レーザ光Ｌの光源としては、波長、照射エネルギー等の条件を満たすのであれば半導体レーザ等、別種のレーザ光源を用いてもよい。
By the way, in the decomposition of GaN as described above, the wavelength needs to be shorter than 365 nm. For this reason, an excimer laser that emits ultraviolet light is generally used as a laser light source, but in Example 1, a YAG laser that is easy to handle is used. However, since the emission wavelength of the YAG laser is 1064 nm and a long wavelength in the infrared region, the third harmonic (wavelength 355 nm) or the fourth harmonic (wavelength 266 nm) is used as the laser light L in combination with the nonlinear optical crystal. ing. As a light source of the laser light L, another kind of laser light source such as a semiconductor laser may be used as long as the conditions such as the wavelength and the irradiation energy are satisfied.
レーザリフトオフの際、第１衝撃吸収層２が設けられているため、半導体チップＳが激しく付勢されても衝突の衝撃が緩和され、破砕や位置ずれを防ぐことができる。
Since the first shock absorbing layer 2 is provided at the time of laser lift-off, the impact of the collision can be mitigated even if the semiconductor chip S is strongly energized, and crushing and displacement can be prevented.
また、キャリア基板５０と第１転写基板１０とを同一方向又は逆方向に移動させながらライン状のレーザ光を照射し、それぞれの移動速度を調整することにより、半導体チップＳをライン毎に任意のピッチで転写することができる。
In addition, by moving the carrier substrate 50 and the first transfer substrate 10 in the same direction or in the opposite direction while irradiating the line-shaped laser beam and adjusting the moving speed of each, the semiconductor chip S can be arbitrarily selected for each line. It can be transferred at pitch.
次に、転写基板配置工程を実行して、第１転写基板１０における第１衝撃吸収層２の第１主面２ａと、第２転写基板１１０における第２衝撃吸収層１０２の第１主面１０２ａとを対向するように配置する。このときの第１転写基板２０と第２転写基板１１０とが対向した隙間の間隔は、約５０μmとしているが、必ずしもこれに限定されず適宜変更が可能である。例えば、１０～２００μm程度としてもよい。隙間が１０μm未満では第１転写基板１０と第２転写基板１１０の表面粗さのばらつきにより両基板が接触してしまい、接触した両基板を剥離する工程が必要になる恐れがあるため不適である。また、２００μmより大きいと後述の転写工程の際に第１転写基板１０から第２転写基板１１０へと移動する半導体チップＳの移動距離が長くなり、転写精度が低下し半導体チップＳの位置ずれが発生する恐れがあるため好ましくない。
Next, a transfer substrate disposing step is performed to form the first major surface 2 a of the first shock absorption layer 2 in the first transfer substrate 10 and the first major surface 102 a of the second shock absorption layer 102 in the second transfer substrate 110. And so as to face each other. The gap between the first transfer substrate 20 and the second transfer substrate 110 at this time is about 50 μm, but it is not necessarily limited to this and can be appropriately changed. For example, it may be about 10 to 200 μm. If the gap is less than 10 μm, the two substrates may come in contact with each other due to the variation in the surface roughness of the first transfer substrate 10 and the second transfer substrate 110, and a process of peeling the two substrates in contact may be necessary. . Also, if it is larger than 200 μm, the moving distance of the semiconductor chip S moving from the first transfer substrate 10 to the second transfer substrate 110 in the later-described transfer step becomes long, the transfer accuracy decreases, and the displacement of the semiconductor chip S It is not preferable because it may occur.
次に、転写工程を実行して半導体チップＳを第２転写基板１１０に転写する。つまり、 第１転写基板１０における第１基材１の第２主面１ｂ側からレーザ光Ｌを照射する。このとき、実施例１においては、ガラスからなる第１基材１及びシリコーン樹脂からなる第１衝撃吸収層２はレーザ光Ｌの透過性を有している。したがって、第１転写基板１０における第１基材１の第２主面１ｂ側から照射したレーザ光Ｌは、第１衝撃吸収層２の第１主面２ａと半導体チップＳとの界面において、ガスが発生し半導体チップＳが分離される。そして、そのとき発生したガスによって半導体チップＳは第２転写基板１１０の第２衝撃吸収層１０２の第１主面１０２ａに向かって付勢されて転写される。
Next, a transfer process is performed to transfer the semiconductor chip S to the second transfer substrate 110. That is, the laser light L is irradiated from the side of the second major surface 1 b of the first base 1 in the first transfer substrate 10. At this time, in Example 1, the first base material 1 made of glass and the first impact absorption layer 2 made of silicone resin have the transparency to the laser light L. Therefore, the laser beam L emitted from the side of the second main surface 1b of the first substrate 1 in the first transfer substrate 10 is a gas at the interface between the first main surface 2a of the first impact absorption layer 2 and the semiconductor chip S. And the semiconductor chip S is separated. Then, the semiconductor chip S is urged toward the first major surface 102 a of the second impact absorption layer 102 of the second transfer substrate 110 and transferred by the gas generated at that time.
この転写工程において、第１転写基板１０と第２転写基板１１０とを対向させたまま、同一方向又は逆方向に互いの速度を調整して移動させながらレーザ光を照射することにより、第１転写基板１０に保持されていた半導体チップＳのピッチと異なるピッチで第２転写基板１１０に転写し保持させることができる。これにより、例えば、半導体チップＳがマイクロＬＥＤの場合、ディスプレイに必要なピッチに配置し直すことが可能となる。
In this transfer step, while the first transfer substrate 10 and the second transfer substrate 110 are opposed to each other, the first transfer is performed by irradiating a laser beam while adjusting and moving the speed in the same direction or the opposite direction. It can be transferred and held on the second transfer substrate 110 at a pitch different from the pitch of the semiconductor chips S held on the substrate 10. Thereby, for example, when the semiconductor chip S is a micro LED, it is possible to rearrange the pitch necessary for the display.
なお、転写工程の後、第２転写基板１１０に保持された半導体チップＳを同様の転写方法により回路基板等の別の基板に転写することができる。
After the transfer process, the semiconductor chip S held on the second transfer substrate 110 can be transferred to another substrate such as a circuit substrate by the same transfer method.
ここで、上述のように、半導体チップ保持工程においては、転写基板１０は半導体チップＳを転写される転写先基板として機能する。また、転写工程においては、転写基板１０は保持した半導体チップＳを転写する転写元基板として機能する。このように、本発明における転写基板は、転写先基板としても機能し、転写元基板としても機能し、繰り返して転写に使用することができる。
Here, as described above, in the semiconductor chip holding step, the transfer substrate 10 functions as a transfer destination substrate to which the semiconductor chip S is transferred. In addition, in the transfer step, the transfer substrate 10 functions as a transfer source substrate for transferring the held semiconductor chip S. As described above, the transfer substrate in the present invention also functions as a transfer destination substrate, functions as a transfer source substrate, and can be repeatedly used for transfer.
なお、実施例１においては、転写基板配置工程及び転写工程では図３に示すように、転写元の第１転写基板１０を上側に、転写先の第２転写基板１１０を下側に配置するようにしたが、必ずしもこれに限定されず適宜変更が可能である。例えば、転写元の第１転写基板１０を下側に、転写先の第２転写基板１１０を上側に配置するように構成してもよいし、両転写基板を鉛直方向に配置し、半導体チップＳを水平方向に転写するように構成してもよい。
In Example 1, as shown in FIG. 3 in the transfer substrate disposing step and the transfer step, the first transfer substrate 10 of the transfer source is disposed on the upper side, and the second transfer substrate 110 of the transfer destination is disposed on the lower side. However, the invention is not necessarily limited to this, and appropriate changes can be made. For example, the first transfer substrate 10 as the transfer source may be disposed on the lower side, and the second transfer substrate 110 as the transfer destination may be disposed on the upper side, or both transfer substrates may be disposed in the vertical direction. May be transferred in the horizontal direction.
このように実施例１においては、レーザ光の照射により、転写元基板から半導体チップを転写されるとともに、半導体チップを保持して転写先基板に転写するための転写基板であって、 第１主面と第２主面とを有した基材と、 前記基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための衝撃吸収層と、を少なくとも備えたことを特徴とする転写基板により、転写時の衝撃を緩和して高精度に半導体チップを転写することができる。
As described above, in the first embodiment, the semiconductor chip is transferred from the transfer source substrate by the irradiation of the laser light, and the transfer substrate for holding the semiconductor chip and transferring it to the transfer destination substrate is the first main substrate. A substrate having a surface and a second main surface, an impact absorbing layer provided on the first main surface of the substrate in contact with the second main surface, for absorbing an impact during transfer of a semiconductor chip, The semiconductor device can transfer the semiconductor chip with high precision by relieving the impact at the time of transfer by the transfer substrate characterized by at least comprising:
また、半導体チップを転写する転写方法であって、 第１主面と第２主面とを有した第１基材と、前記第１基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第１衝撃吸収層と、を少なくとも備えた第１転写基板を準備する第１転写基板準備工程と、 第１主面と第２主面とを有した第２基材と、前記第２基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第２衝撃吸収層と、を少なくとも備えた第２転写基板を準備する第２転写基板準備工程と、前記第１転写基板における前記第１衝撃吸収層の第１主面に半導体チップを保持させる半導体チップ保持工程と、前記第１転写基板における前記第１衝撃吸収層の第１主面と、前記第２転写基板における前記第２衝撃吸収層の第１主面とを対向するように配置する転写基板配置工程と、前記第１転写基板における前記第１基材の前記第２主面側からレーザ光を照射して、前記第１衝撃吸収層の第１主面から半導体チップを分離して前記第２転写基板の前記第２衝撃吸収層の第１主面に転写する転写工程と、を備えたことを特徴とする転写方法により、転写時の衝撃を緩和して高精度に半導体チップを転写することができる。
In addition, it is a transfer method for transferring a semiconductor chip, comprising: a first base material having a first main surface and a second main surface; and a second main surface contacting the first main surface of the first base material. A first transfer substrate preparation step of preparing a first transfer substrate provided with at least a first shock absorbing layer for relieving a shock at the time of transfer of the semiconductor chip; a first main surface and a second main surface A second base material having a second main surface in contact with the first main surface of the second base material, and a second shock absorbing layer for alleviating an impact at the time of transfer of the semiconductor chip; A second transfer substrate preparing step of preparing a second transfer substrate comprising at least a semiconductor chip holding step of holding a semiconductor chip on a first main surface of the first shock absorbing layer in the first transfer substrate; And the second main surface of the second transfer substrate. A transfer substrate disposing step of arranging the first main surface of the shock absorption layer to face the second main surface, and irradiating the laser light from the second main surface side of the first base material of the first transfer substrate; A transfer step of separating the semiconductor chip from the first main surface of the first shock absorption layer and transferring the semiconductor chip to the first main surface of the second shock absorption layer of the second transfer substrate; Thus, it is possible to transfer the semiconductor chip with high accuracy by alleviating the impact at the time of transfer.
本発明の実施例２は、転写基板における衝撃吸収層の表面にさらに粘着性を有したチップ固定層が積層されている点で実施例１と異なっている。
The second embodiment of the present invention is different from the first embodiment in that a chip fixing layer having adhesiveness is further laminated on the surface of the shock absorbing layer of the transfer substrate.
本発明の実施例２について、図４～図６を参照して説明する。図４は、本発明の実施例２における転写基板の断面を説明する図である。図５は、本発明の実施例２における半導体チップ保持工程を説明する図で、（ａ）は平面図、（ｂ）は側面断面図である。図６は、本発明の実施例２における転写工程を説明する図である。
A second embodiment of the present invention will be described with reference to FIGS. 4 to 6. FIG. 4 is a view for explaining the cross section of the transfer substrate in Example 2 of the present invention. FIG. 5 is a view for explaining a semiconductor chip holding step in the second embodiment of the present invention, in which (a) is a plan view and (b) is a side sectional view. FIG. 6 is a view for explaining the transfer process in Example 2 of the present invention.
（転写基板） 実施例２における転写基板２０は、図４に示すように、基材１の第１主面１ａに第２主面２ｂが接して衝撃吸収層２が設けられ、さらに、衝撃吸収層２の第１主面２ａに第２主面３ｂが接してポリイミドからなるチップ固定層３が設けられている。実施例２においては、衝撃吸収層２はシリコーン発泡体で構成している。シリコーン発泡体は、その内部に気泡が含まれており、衝撃吸収性に優れている。
(Transfer substrate) As shown in FIG. 4, in the transfer substrate 20 in Example 2, the second main surface 2b is in contact with the first main surface 1a of the substrate 1 and the shock absorbing layer 2 is provided. The second main surface 3 b is in contact with the first main surface 2 a of the layer 2, and the chip fixing layer 3 made of polyimide is provided. In Example 2, the shock absorbing layer 2 is composed of silicone foam. The silicone foam contains bubbles inside and is excellent in shock absorption.
衝撃吸収層２がシリコーン樹脂やアクリル樹脂で構成されている場合は、これらの材料が粘着性を備えているので、半導体チップＳを保持することができる。しかし、シリコーン発泡体は粘着性が乏しく、そのままでは、半導体チップＳを保持することが困難である。そこで、実施例２においては、粘着性を有したチップ固定層３を衝撃吸収層２の第１主面２ａ側に積層して粘着性を持たせるように構成している。具体的には、チップ固定層３を転写基板２０の平面視で全域に厚み１０μmのポリイミドで構成している。
When the shock absorbing layer 2 is made of silicone resin or acrylic resin, since these materials have adhesiveness, the semiconductor chip S can be held. However, silicone foam has poor adhesion and it is difficult to hold the semiconductor chip S as it is. Therefore, in the second embodiment, the chip fixing layer 3 having adhesiveness is laminated on the side of the first main surface 2 a of the shock absorbing layer 2 to have adhesiveness. Specifically, the chip fixing layer 3 is made of polyimide having a thickness of 10 μm in the whole area in a plan view of the transfer substrate 20.
このように、衝撃吸収層２の第１主面２ａに第２主面３ｂが接してポリイミドからなるチップ固定層３を設けることにより、半導体チップＳが転写元基板から転写基板２０に転写されるときの衝撃を緩和して半導体チップＳの破砕や位置ずれを防ぐとともに、半導体チップＳを確実に保持することができる。
Thus, the semiconductor chip S is transferred from the transfer source substrate to the transfer substrate 20 by providing the chip fixing layer 3 made of polyimide with the second main surface 3b being in contact with the first main surface 2a of the shock absorption layer 2 The shock of time can be mitigated to prevent the semiconductor chip S from being crushed or displaced, and the semiconductor chip S can be reliably held.
なお、実施例２においては、チップ固定層３を厚み１０μmのポリイミドで構成するようにしたが、必ずしもこれに限定されず適宜変更が可能である。例えば、３～５０μm程度の厚みであってもよい。すなわち、厚み３μm未満では十分な粘着性が発現されずチップ位置ずれが発生する恐れがあるため不適である。また、５０μmより厚いと転写基板の表面物性はチップ固定層の物性が支配的となり、衝撃吸収層の衝撃吸収性が損なわれる恐れがあるため好ましくない。また、ポリイミド以外の別の粘着性を有した材料で構成してもよい。
In the second embodiment, the chip fixing layer 3 is made of polyimide having a thickness of 10 μm. However, the present invention is not necessarily limited to this and appropriate changes can be made. For example, the thickness may be about 3 to 50 μm. That is, if the thickness is less than 3 μm, sufficient adhesiveness is not expressed, and there is a possibility that chip positional deviation may occur, which is unsuitable. On the other hand, if the thickness is more than 50 μm, the physical properties of the chip fixing layer become dominant in the surface properties of the transfer substrate, and the impact absorption of the impact absorbing layer may be impaired. Moreover, you may comprise with materials with another adhesiveness other than a polyimide.
また、実施例２においては、シリコーン発泡体で衝撃吸収層を構成するようにしたが、必ずしもこれに限定されず適宜変更が可能である。例えば、シリコーン樹脂やアクリル系樹脂で衝撃吸収層を構成するようにして、その表面にチップ固定層を積層してもよい。
Moreover, in Example 2, although the impact-absorbing layer was comprised with the silicone foam, it is not necessarily limited to this and can be changed suitably. For example, the chip fixing layer may be laminated on the surface of the shock absorbing layer made of silicone resin or acrylic resin.
（転写方法） まず、第１転写基板準備工程を実行し、第１主面１ａと第２主面１ｂとを有した第１基材１と、第１基材１の第１主面１ａに第２主面２ｂを接して設けた第１衝撃吸収層２と、第１衝撃吸収層２の第１主面２ａに第２主面３ｂを接して設けた第１チップ固定層３と、を備えた第１転写基板２０を準備する。また、同様に、第２転写基板準備工程を実行して、第１主面１０１ａと第２主面１０１ｂとを有した第２基材１０１と、第２基材１０１の第１主面１０１ａに第２主面１０２ｂを接して設けた第２衝撃吸収層１０２と、第２衝撃吸収層１０２の第１主面１０２ａに第２主面１０３ｂを接して設けた第２チップ固定層１０３と、を備えた第２転写基板１２０を準備する。
(Transfer Method) First, the first transfer substrate preparation step is performed, and the first base 1 having the first main surface 1a and the second main surface 1b and the first main surface 1a of the first base 1 are provided. A first shock absorbing layer 2 provided in contact with the second main surface 2b, and a first chip fixing layer 3 provided with the second main surface 3b in contact with the first main surface 2a of the first shock absorbing layer 2 The first transfer substrate 20 provided is prepared. Similarly, the second transfer substrate preparation step is performed to form the second base material 101 having the first main surface 101a and the second main surface 101b and the first main surface 101a of the second base material 101. A second shock absorbing layer 102 provided in contact with the second main surface 102b, and a second chip fixing layer 103 provided with the second main surface 103b in contact with the first main surface 102a of the second shock absorption layer 102 The provided second transfer substrate 120 is prepared.
実施例２における第１基材１及び第２基材１０１はガラス、第１衝撃吸収層２及び第２衝撃吸収層１０２はシリコーン樹脂、第１チップ固定層３及び第２チップ固定層１０３はポリイミドで構成している。この構成により、シリコーン樹脂によって半導体チップＳの転写時の衝撃を緩和するとともに、粘着性が乏しいシリコーン樹脂にポリイミドを積層することによって確実に半導体チップＳを保持することができる。
The first base 1 and the second base 101 in Example 2 are glass, the first impact absorbing layer 2 and the second impact absorbing layer 102 are silicone resin, and the first chip fixing layer 3 and the second chip fixing layer 103 are polyimide. It consists of With this configuration, the silicone resin can reduce the impact at the time of transfer of the semiconductor chip S, and the semiconductor chip S can be reliably held by laminating polyimide on silicone resin having poor adhesiveness.
次に、半導体チップ保持工程を実行して、第１転写基板２０における第１チップ固定層３の第１主面３ａに半導体チップＳを保持させる。すなわち、図５に示すように、半導体チップＳを形成したサファイアからなるキャリア基板５０の半導体チップＳを形成した面と第１転写基板２０における第１チップ固定層３の第１主面３ａとを対向させて配置し、キャリア基板５０の裏側からレーザ光Ｌをライン状に照射しながら移動させて、キャリア基板５０に保持されている全ての半導体チップＳを第１転写基板２０における第１チップ固定層３の第１主面３ａに半導体チップＳを転写して保持させる。
Next, the semiconductor chip holding step is performed to hold the semiconductor chip S on the first major surface 3 a of the first chip fixing layer 3 in the first transfer substrate 20. That is, as shown in FIG. 5, the surface of the carrier substrate 50 made of sapphire on which the semiconductor chip S is formed, on which the semiconductor chip S is formed, and the first main surface 3a of the first chip fixing layer 3 in the first transfer substrate 20 They are arranged to face each other and moved while irradiating the laser light L in a line from the back side of the carrier substrate 50 to move all the semiconductor chips S held by the carrier substrate 50 to the first chip on the first transfer substrate 20 The semiconductor chip S is transferred and held on the first major surface 3 a of the layer 3.
すなわち、レーザ光を照射することによって、サファイアからなるキャリア基板５０におけるＧａＮ層の一部をＧａと窒素に分解させて、半導体チップＳを分離し第１転写基板２０に向かって付勢させる。この手法はレーザリフトオフと呼ばれ、分離した半導体チップＳは、ＧａＮが分解されるときに窒素からなるガスが発生することにより付勢され第１転写基板２０に転写される。
That is, by irradiating a laser beam, a part of the GaN layer in the carrier substrate 50 made of sapphire is decomposed into Ga and nitrogen, and the semiconductor chip S is separated and urged toward the first transfer substrate 20. This method is called laser lift-off, and the separated semiconductor chip S is energized by generating a gas composed of nitrogen when the GaN is decomposed, and is transferred to the first transfer substrate 20.
このとき、第１転写基板１０の第１主面１ａに第２主面２ｂが接して第１衝撃吸収層２が設けられているため、半導体チップＳが激しく付勢されても衝突の衝撃が緩和され、破砕や位置ずれを防ぐことができる。また、第１衝撃吸収層２の第１主面２ａに第２主面３ｂが接してチップ固定層３が設けられているため、転写された半導体チップＳを確実に保持することができる。
At this time, since the first impact absorption layer 2 is provided with the second principal surface 2b being in contact with the first principal surface 1a of the first transfer substrate 10, the collision impact is caused even if the semiconductor chip S is vigorously energized. It is relieved and can prevent crushing and misalignment. Further, since the chip fixing layer 3 is provided with the second principal surface 3b being in contact with the first principal surface 2a of the first impact absorption layer 2, the transferred semiconductor chip S can be reliably held.
次に、転写基板配置工程を実行して、第１転写基板２０における第１チップ固定層３の第１主面３ａと、第２転写基板１２０における第２チップ固定層１０３の第１主面１０３ａとを対向するように配置する。このときの第１転写基板２０と第２転写基板１２０とが対向した隙間の間隔は、約５０μmとしているが、必ずしもこの間隔でなくてもよい。例えば、１０～２００μm程度であってもよい。すなわち、厚み１０μm未満では第１転写基板２０と第２転写基板１２０の表面粗さのばらつきにより両基板が接触してしまい、接触した両基板を剥離する工程が必要になる恐れがあるため不適である。また、２００μmより厚いと後述の転写工程の際に転写精度が低下し半導体チップＳの位置ずれが発生する恐れがあるため好ましくない。
Next, a transfer substrate disposing step is performed to form the first main surface 3a of the first chip fixing layer 3 in the first transfer substrate 20 and the first main surface 103a of the second chip fixing layer 103 in the second transfer substrate 120. And so as to face each other. The gap between the first transfer substrate 20 and the second transfer substrate 120 facing each other at this time is about 50 μm, but may not be this gap. For example, it may be about 10 to 200 μm. That is, if the thickness is less than 10 μm, the two substrates may come in contact with each other due to variations in the surface roughness of the first transfer substrate 20 and the second transfer substrate 120, and a process of peeling the two substrates in contact may be necessary. is there. If the thickness is more than 200 μm, the transfer accuracy may be lowered during the transfer process described later, which may cause positional deviation of the semiconductor chip S, which is not preferable.
次に、転写工程を実行して半導体チップＳを第２転写基板１２０に転写する。つまり、 第１転写基板２０における第１基材１の第２主面１ｂ側からレーザ光Ｌを照射する。このとき、実施例２においては、ガラスからなる第１基材１及びシリコーン樹脂からなる第１衝撃吸収層２はレーザ光Ｌの透過性を有しているが、ポリイミドからなる第１チップ固定層３は透過性を有していない。したがって、第１転写基板２０における第１基材１の第２主面１ｂ側から照射したレーザ光Ｌは、ポリイミドからなる第１チップ固定層３に吸収され焼損することにより、第１衝撃吸収層２の第１主面２ａと半導体チップＳとの間が分離される。そして、そのとき発生したガスによって半導体チップＳは第２転写基板１２０の第２チップ固定層１０３の第１主面１０３ａに向かって付勢されて転写される。
Next, a transfer process is performed to transfer the semiconductor chip S to the second transfer substrate 120. That is, the laser light L is irradiated from the side of the second main surface 1 b of the first base material 1 in the first transfer substrate 20. At this time, in Example 2, although the first base material 1 made of glass and the first impact absorption layer 2 made of silicone resin have the transparency of the laser light L, the first chip fixing layer made of polyimide 3 is not permeable. Therefore, the laser light L irradiated from the side of the second main surface 1b of the first base material 1 in the first transfer substrate 20 is absorbed by the first chip fixing layer 3 made of polyimide and burnt, thereby the first shock absorbing layer The two first main surfaces 2a and the semiconductor chip S are separated. Then, the semiconductor chip S is urged toward the first major surface 103 a of the second chip fixed layer 103 of the second transfer substrate 120 and transferred by the gas generated at that time.
なお、第１チップ固定層３を焼損させるレーザ光Ｌは、第１チップ固定層３に吸収される波長である必要があり、第１チップ固定層３の材質に応じた波長のレーザ光源を選定する必要がある。また、第１チップ固定層３のレーザ光Ｌの透過性は６０％以下が好ましい。レーザ光Ｌの透過性が６０％より大きい場合、レーザ光Ｌのエネルギー吸収が不十分なため焼損されず転写されない恐れがあるため不適である。
The laser light L for burning the first chip fixing layer 3 needs to have a wavelength absorbed by the first chip fixing layer 3, and a laser light source having a wavelength according to the material of the first chip fixing layer 3 is selected. There is a need to. The transmittance of the laser light L of the first chip fixing layer 3 is preferably 60% or less. If the transmittance of the laser beam L is more than 60%, the energy absorption of the laser beam L is insufficient, and the laser beam L is unsuitable because it may not be burnt out and not be transferred.
転写工程において、第１転写基板２０と第２転写基板１２０とを対向させたまま、同一方向又は逆方向に互いの速度を調整して移動させながらレーザ光を照射することにより、第１転写基板２０に保持されていた半導体チップＳのピッチを異なるピッチで第２転写基板１２０に転写し保持させることができる。これにより、例えば、半導体チップＳがマイクロＬＥＤの場合、ディスプレイに必要なピッチに配置し直すことが可能となる。
In the transfer step, while the first transfer substrate 20 and the second transfer substrate 120 are opposed to each other, the first transfer substrate is irradiated with laser light while adjusting and moving the speed in the same direction or in the opposite direction. The pitches of the semiconductor chips S held at 20 can be transferred and held on the second transfer substrate 120 at different pitches. Thereby, for example, when the semiconductor chip S is a micro LED, it is possible to rearrange the pitch necessary for the display.
なお、転写工程の後、第２転写基板１２０に保持された半導体チップＳを同様の転写方法により回路基板等の別の基板に転写することも可能である。回路基板に実装する場合は、加熱工程を経ることが多い。その場合、ポリイミドからなるチップ固定層は耐熱性を有しているため実装時の加熱工程に耐えることができる。
It is also possible to transfer the semiconductor chip S held by the second transfer substrate 120 to another substrate such as a circuit substrate by the same transfer method after the transfer process. In the case of mounting on a circuit board, a heating process is often performed. In that case, since the chip fixing layer made of polyimide has heat resistance, it can withstand the heating process at the time of mounting.
なお、実施例２においては、転写基板配置工程及び転写工程では図６に示すように、転写元の第１転写基板２０を上側に、転写先の第２転写基板１２０を下側に配置するようにしたが、必ずしもこれに限定されず適宜変更が可能である。例えば、転写元の第１転写基板２０を下側に、転写先の第２転写基板１２０を上側に配置するように構成してもよいし、両基板を鉛直方向に配置し、半導体チップＳを水平方向に転写するように構成してもよい。
In the second embodiment, as shown in FIG. 6, in the transfer substrate disposing step and the transfer step, the first transfer substrate 20 of the transfer source is disposed on the upper side, and the second transfer substrate 120 of the transfer destination is disposed on the lower side. However, the invention is not necessarily limited to this, and appropriate changes can be made. For example, the first transfer substrate 20 of the transfer source may be disposed on the lower side, and the second transfer substrate 120 of the transfer destination may be disposed on the upper side. It may be configured to transfer in the horizontal direction.
このように実施例２においては、半導体チップを保持するチップ固定層を前記衝撃吸収層の第１主面に第２主面を接して設けたことにより、粘着性に乏しい衝撃吸収層であってもチップ固定層により確実に半導体チップを保持することができる。
As described above, in Example 2, since the chip fixing layer for holding the semiconductor chip is provided on the first main surface of the shock absorbing layer with the second main surface in contact, the shock absorbing layer is poor in adhesiveness. The semiconductor chip can be held securely by the chip fixing layer.
また、半導体チップを転写する転写方法であって、 第１主面と第２主面とを有した第１基材と、前記第１基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第１衝撃吸収層と、前記第１衝撃吸収層の第１主面に第２主面を接して設けた、半導体チップを保持するための第１チップ固定層と、を備えた第１転写基板を準備する第１転写基板準備工程と、 第１主面と第２主面とを有した第２基材と、前記第２基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第２衝撃吸収層と、前記第２衝撃吸収層の第１主面に第２主面を接して設けた、半導体チップを保持するための第２チップ固定層と、を備えた第２転写基板を準備する第２転写基板準備工程と、前記第１転写基板における前記第１チップ固定層の第１主面に半導体チップを保持させる半導体チップ保持工程と、前記第１転写基板における前記第１チップ固定層の第１主面と、前記第２転写基板における前記第２チップ固定層の第１主面とを対向するように配置する転写基板配置工程と、前記第１転写基板における前記第１基材の前記第２主面側からレーザ光を照射して、半導体チップを分離して前記第２転写基板の前記第２チップ固定層の第１主面に転写する転写工程と、を備えたことを特徴とする転写方法により、転写時の衝撃を緩和して高精度に半導体チップを転写することができるとともに、粘着性に乏しい衝撃吸収層であってもチップ固定層により確実に半導体チップを保持することができる。
In addition, it is a transfer method for transferring a semiconductor chip, comprising: a first base material having a first main surface and a second main surface; and a second main surface contacting the first main surface of the first base material. In order to hold a semiconductor chip provided with a first shock absorbing layer for relieving shock during transfer of a semiconductor chip, and a second main surface provided in contact with the first main surface of the first shock absorbing layer Preparing a first transfer substrate comprising the first chip fixing layer, a second transfer substrate having a first main surface and a second main surface, and the second base substrate. A second shock absorbing layer provided on the first main surface of the semiconductor device in contact with the second main surface to reduce the impact during transfer of the semiconductor chip, and a second main surface of the first main surface of the second shock absorbing layer A second transfer substrate preparing step of preparing a second transfer substrate provided with a second chip fixing layer for holding a semiconductor chip, the second transfer substrate being provided in contact with the surfaces; A semiconductor chip holding step of holding a semiconductor chip on the first main surface of the first chip fixing layer in the transfer substrate, a first main surface of the first chip fixing layer in the first transfer substrate, and the second transfer substrate Placing a laser beam from the second main surface side of the first base material in the first transfer substrate, and arranging a transfer substrate to face the first main surface of the second chip fixing layer in And a transfer step of separating the semiconductor chip and transferring it to the first main surface of the second chip fixing layer of the second transfer substrate, thereby reducing the impact upon transfer by the transfer method. Thus, the semiconductor chip can be transferred with high accuracy, and the chip fixing layer can reliably hold the semiconductor chip even if the shock absorbing layer has poor adhesion.
本発明の実施例３は、転写元基板の構成と転写先基板の構成が異なる点で実施例１及び実施例２と異なっている。
The third embodiment of the present invention is different from the first and second embodiments in that the configuration of the transfer source substrate and the configuration of the transfer destination substrate are different.
すなわち、実施例３における転写方法は、上述のポリイミドからなる第１チップ固定層３を備えた第１転写基板２０の裏面からレーザ光Ｌを照射して半導体チップＳを分離し、シリコーン樹脂又はアクリル系樹脂からなる第２衝撃吸収層１０２を備えチップ固定層を備えない第２転写基板１１０に転写するものである。
That is, in the transfer method in Example 3, the semiconductor chip S is separated by irradiating the laser light L from the back surface of the first transfer substrate 20 provided with the above-described first chip fixing layer 3 made of polyimide, and silicone resin or acrylic It transfers to the 2nd transfer board 110 which is provided with the 2nd shock absorption layer 102 which consists of system resin, and is not provided with a chip fixed layer.
この場合も第１転写基板２０においては、確実に半導体チップＳを保持することができ、第２転写基板１１０においては、転写時の衝撃を緩和することができるとともに半導体チップＳを確実に保持することができる。
Also in this case, the semiconductor chip S can be reliably held in the first transfer substrate 20, and the impact at the time of transfer can be mitigated and the semiconductor chip S is reliably held in the second transfer substrate 110. be able to.
（変形例） 変形例における転写方法は、上述のシリコーン樹脂又はアクリル系樹脂からなる第１衝撃吸収層２を備えチップ固定層を備えない第１転写基板１０の裏面からレーザ光Ｌを照射して半導体チップＳを分離し、ポリイミドからなる第２チップ固定層１０３を備えた第２転写基板１２０に転写するものである。
(Modification) The transfer method in the modification includes irradiating the laser light L from the back surface of the first transfer substrate 10 provided with the first impact absorption layer 2 made of the above-mentioned silicone resin or acrylic resin and not provided with the chip fixing layer. The semiconductor chip S is separated and transferred onto a second transfer substrate 120 provided with a second chip fixing layer 103 made of polyimide.
この場合も第１転写基板１０においては、確実に半導体チップＳを保持することができ、第２転写基板１２０においては、転写時の衝撃を緩和することができるとともに半導体チップＳを確実に保持することができる。
Also in this case, in the first transfer substrate 10, the semiconductor chip S can be reliably held, and in the second transfer substrate 120, the impact at the time of transfer can be mitigated and the semiconductor chip S is reliably held. be able to.
このように、実施例３においては、シリコーン樹脂又はアクリル系樹脂からなる衝撃吸収層を備えチップ固定層を備えない転写基板と、衝撃吸収層及びポリイミドからなるチップ固定層を備えた転写基板との間においても、転写時の衝撃を緩和するとともに、半導体チップを確実に保持することができる。
As described above, in Example 3, a transfer substrate provided with an impact absorption layer made of silicone resin or acrylic resin and not provided with a chip fixing layer, and a transfer substrate provided with an impact absorption layer and a chip fixing layer made of polyimide In addition, the semiconductor chip can be reliably held while easing the impact at the time of transfer.
本発明における転写基板、及び転写方法は、半導体チップを転写する分野に広く用いることができる。
The transfer substrate and transfer method in the present invention can be widely used in the field of transferring a semiconductor chip.
１： 基材（第１基材） ２：衝撃吸収層（第１衝撃吸収層） ３：チップ固定層（第１チップ固定層） １ａ：第１主面 １ｂ：第２主面 ２ａ：第１主面 ２ｂ：第２主面 ３ａ：第１主面 ３ｂ：第２主面 １０：転写基板（第１転写基板） ２０：転写基板（第１転写基板） ５０：キャリア基板１０１：第２基材 １０２：第２衝撃吸収層 １０３：第２チップ固定層 １０１ａ：第１主面 １０１ｂ：第２主面 １０２ａ：第１主面 １０２ｂ：第２主面 １０３ａ：第１主面 １０３ｂ：第２主面 １１０：第２転写基板 １２０：第２転写基板 Ｌ：レーザ光 Ｓ：半導体チップ
1: base material (first base material) 2: shock absorbing layer (first shock absorbing layer) 3: chip fixing layer (first chip fixing layer) 1a: first main surface 1b: second main surface 2a: first Major surface 2b: Second major surface 3a: First major surface 3b: Second major surface 10: Transfer substrate (first transfer substrate) 20: Transfer substrate (first transfer substrate) 50: Carrier substrate 101: Second substrate 102: second shock absorption layer 103: second chip fixing layer 101a: first main surface 101b: second main surface 102a: first main surface 102b: second main surface 103a: first main surface 103b: second main surface 110: Second transfer substrate 120: Second transfer substrate L: Laser light S: Semiconductor chip
Claims (4)
- レーザ光の照射により、転写元基板から半導体チップを転写されるとともに、半導体チップを保持して転写先基板に転写するための転写基板であって、
第１主面と第２主面とを有した基材と、
前記基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための衝撃吸収層と、を少なくとも備えたことを特徴とする転写基板。 A transfer substrate for transferring a semiconductor chip from a transfer source substrate by laser beam irradiation and for holding the semiconductor chip and transferring the semiconductor chip onto a transfer destination substrate,
A substrate having a first main surface and a second main surface,
A transfer substrate comprising at least a shock absorbing layer provided on a first main surface of the substrate in contact with a second main surface, for absorbing an impact at the time of transfer of a semiconductor chip. - 半導体チップを保持するチップ固定層を前記衝撃吸収層の第１主面に第２主面を接して設けたことを特徴とする請求項１に記載の転写基板。 2. The transfer substrate according to claim 1, wherein a chip fixing layer for holding a semiconductor chip is provided on the first main surface of the shock absorbing layer in contact with the second main surface.
- 半導体チップを転写する転写方法であって、
第１主面と第２主面とを有した第１基材と、前記第１基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第１衝撃吸収層と、を少なくとも備えた第１転写基板を準備する第１転写基板準備工程と、
第１主面と第２主面とを有した第２基材と、前記第２基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第２衝撃吸収層と、を少なくとも備えた第２転写基板を準備する第２転写基板準備工程と、
前記第１転写基板における前記第１衝撃吸収層の第１主面に半導体チップを保持させる半導体チップ保持工程と、
前記第１転写基板における前記第１衝撃吸収層の第１主面と、前記第２転写基板における前記第２衝撃吸収層の第１主面とを対向するように配置する転写基板配置工程と、
前記第１転写基板における前記第１基材の前記第２主面側からレーザ光を照射して、前記第１衝撃吸収層の第１主面から半導体チップを分離して前記第２転写基板の前記第２衝撃吸収層の第１主面に転写する転写工程と、を備えたことを特徴とする転写方法。 A transfer method for transferring a semiconductor chip, comprising:
A first base material having a first main surface and a second main surface, and an impact at the time of transfer of a semiconductor chip provided with the second main surface being in contact with the first main surface of the first base material Providing a first transfer substrate having at least a first shock absorbing layer for forming a first transfer substrate;
A second base material having a first main surface and a second main surface, and an impact at the time of transfer of a semiconductor chip provided with the second main surface being in contact with the first main surface of the second base material Preparing a second transfer substrate having at least a second shock absorbing layer for forming a second transfer substrate;
A semiconductor chip holding step of holding a semiconductor chip on a first main surface of the first shock absorbing layer in the first transfer substrate;
A transfer substrate disposing step of disposing a first main surface of the first impact absorption layer in the first transfer substrate and a first main surface of the second impact absorption layer in the second transfer substrate;
A laser beam is irradiated from the side of the second main surface of the first base material in the first transfer substrate to separate the semiconductor chip from the first main surface of the first impact absorption layer, and the second transfer substrate is manufactured. A transfer step of transferring to the first main surface of the second impact absorption layer. - 半導体チップを転写する転写方法であって、
第１主面と第２主面とを有した第１基材と、前記第１基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第１衝撃吸収層と、前記第１衝撃吸収層の第１主面に第２主面を接して設けた、半導体チップを保持するための第１チップ固定層と、を備えた第１転写基板を準備する第１転写基板準備工程と、
第１主面と第２主面とを有した第２基材と、前記第２基材の第１主面に第２主面を接して設けた、半導体チップの転写時の衝撃を緩和するための第２衝撃吸収層と、前記第２衝撃吸収層の第１主面に第２主面を接して設けた、半導体チップを保持するための第２チップ固定層と、を備えた第２転写基板を準備する第２転写基板準備工程と、
前記第１転写基板における前記第１チップ固定層の第１主面に半導体チップを保持させる半導体チップ保持工程と、
前記第１転写基板における前記第１チップ固定層の第１主面と、前記第２転写基板における前記第２チップ固定層の第１主面とを対向するように配置する転写基板配置工程と、
前記第１転写基板における前記第１基材の前記第２主面側からレーザ光を照射して、半導体チップを分離して前記第２転写基板の前記第２チップ固定層の第１主面に転写する転写工程と、を備えたことを特徴とする転写方法。
A transfer method for transferring a semiconductor chip, comprising:
A first base material having a first main surface and a second main surface, and an impact at the time of transfer of a semiconductor chip provided with the second main surface being in contact with the first main surface of the first base material A first shock absorbing layer for holding a semiconductor chip, and a first shock absorbing layer for holding a semiconductor chip, the second shock absorbing layer being provided in contact with the second main surface on the first main surface of the first shock absorbing layer; A first transfer substrate preparation step of preparing a transfer substrate;
A second base material having a first main surface and a second main surface, and an impact at the time of transfer of a semiconductor chip provided with the second main surface being in contact with the first main surface of the second base material A second shock absorbing layer for holding the semiconductor chip, and a second shock absorbing layer for holding the semiconductor chip, the second shock absorbing layer being provided in contact with the second main surface on the first main surface of the second shock absorbing layer; A second transfer substrate preparing step of preparing a transfer substrate;
A semiconductor chip holding step of holding a semiconductor chip on a first main surface of the first chip fixing layer on the first transfer substrate;
A transfer substrate disposing step of disposing a first main surface of the first chip fixing layer in the first transfer substrate and a first main surface of the second chip fixing layer in the second transfer substrate;
A laser beam is irradiated from the side of the second main surface of the first base on the first transfer substrate to separate the semiconductor chip, and the first main surface of the second chip fixing layer on the second transfer substrate is separated. And a transfer step of transferring.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017191072A JP6966281B2 (en) | 2017-09-29 | 2017-09-29 | Transfer substrate and transfer method |
| JP2017-191072 | 2017-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2019065441A1 true WO2019065441A1 (en) | 2019-04-04 |
Family
ID=65901803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2018/034789 WO2019065441A1 (en) | 2017-09-29 | 2018-09-20 | Transfer substrate and transfer method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6966281B2 (en) |
| TW (1) | TW201921729A (en) |
| WO (1) | WO2019065441A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210066547A1 (en) | 2019-08-28 | 2021-03-04 | Tslc Corporation | Semiconductor Components And Semiconductor Structures And Methods Of Fabrication |
| JP7307024B2 (en) * | 2020-03-31 | 2023-07-11 | 東レエンジニアリング株式会社 | Transfer device and position correction method for transfer device |
| JP2022041533A (en) | 2020-09-01 | 2022-03-11 | 三星電子株式会社 | Intermediate structure for manufacturing micro led display, manufacturing method of intermediate structure for manufacturing micro led display, and manufacturing method of micro led display |
| JP2022058237A (en) * | 2020-09-30 | 2022-04-11 | 信越化学工業株式会社 | Method for lifting optical device and device thereof, method for manufacturing receptor substrate to which optical device is transferred, and method for manufacturing display |
| JP2022101804A (en) | 2020-12-25 | 2022-07-07 | 日東電工株式会社 | Impact absorption adhesive sheet |
| WO2022138459A1 (en) | 2020-12-25 | 2022-06-30 | 日東電工株式会社 | Resin composition |
| KR20220130020A (en) | 2021-03-17 | 2022-09-26 | 닛토덴코 가부시키가이샤 | Method for manufacturing semiconductor device |
| TWI766699B (en) * | 2021-05-25 | 2022-06-01 | 台灣愛司帝科技股份有限公司 | Method for transferring electronic elements |
| JP2023102162A (en) * | 2022-01-11 | 2023-07-24 | 日東電工株式会社 | resin composition |
| JP2023102163A (en) * | 2022-01-11 | 2023-07-24 | 日東電工株式会社 | Composition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010177390A (en) * | 2009-01-29 | 2010-08-12 | Sony Corp | Method of transferring device and method of manufacturing display apparatus |
| JP2015076503A (en) * | 2013-10-09 | 2015-04-20 | 日東電工株式会社 | Semiconductor device manufacturing method |
| JP2017168548A (en) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | Glass wiring board and method for manufacturing the same, component mounting glass wiring board and method for manufacturing the same, and substrate for display device |
-
2017
- 2017-09-29 JP JP2017191072A patent/JP6966281B2/en active Active
-
2018
- 2018-09-20 WO PCT/JP2018/034789 patent/WO2019065441A1/en active Application Filing
- 2018-09-28 TW TW107134295A patent/TW201921729A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010177390A (en) * | 2009-01-29 | 2010-08-12 | Sony Corp | Method of transferring device and method of manufacturing display apparatus |
| JP2015076503A (en) * | 2013-10-09 | 2015-04-20 | 日東電工株式会社 | Semiconductor device manufacturing method |
| JP2017168548A (en) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | Glass wiring board and method for manufacturing the same, component mounting glass wiring board and method for manufacturing the same, and substrate for display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6966281B2 (en) | 2021-11-10 |
| JP2019067892A (en) | 2019-04-25 |
| TW201921729A (en) | 2019-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2019065441A1 (en) | Transfer substrate and transfer method | |
| JP6505773B2 (en) | Method and apparatus for performing laser filamentation inside a transparent material | |
| JP6932676B2 (en) | Transfer method, manufacturing method of image display device using this, and transfer device | |
| US9607897B2 (en) | Semiconductor device and method for manufacturing the same | |
| KR102210284B1 (en) | Method for processing wafer | |
| JP6938021B2 (en) | Machining method by laser lift-off and flattening jig | |
| JP7252032B2 (en) | Transfer substrate, mounting method using same, and method for manufacturing image display device | |
| US11417799B2 (en) | Method for fabricating (LED) dice using laser lift-off from a substrate to a receiving plate | |
| US9919945B2 (en) | Laser processing method and laser processing apparatus | |
| KR20170120092A (en) | Glass substrate and laminate using same | |
| TW201535781A (en) | Optical device | |
| KR20170128711A (en) | Method for manufacturing display apparatus | |
| US20170297946A1 (en) | Glass plate and manufacturing method therefor | |
| JP6926018B2 (en) | Transfer substrate, mounting method using it, and manufacturing method of image display device | |
| JP4565977B2 (en) | Film peeling method and film peeling apparatus | |
| JP6571437B2 (en) | Manufacturing method of semiconductor device | |
| CN102152413A (en) | Wafer processing method | |
| TWI832225B (en) | Manufacturing method of supporting glass substrate and manufacturing method of laminated substrate | |
| KR102181999B1 (en) | Expanded sheet, producing method for expanded sheet, and expanding method for expanded sheet | |
| JP2012104644A (en) | Wafer cutting method and wafer cutting device | |
| CN117062858A (en) | Method for manufacturing connection film and connection structure | |
| KR20180063420A (en) | Scribing apparatus and scribing method | |
| JP2012124300A (en) | Wafer breaking method and wafer breaking device | |
| JP6612648B2 (en) | Support body separating apparatus and support body separating method | |
| JP7206829B2 (en) | METHOD FOR MANUFACTURING PLATE MEMBER AND LAMINATE |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18861393 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 18861393 Country of ref document: EP Kind code of ref document: A1 |