WO2019062188A1 - 显示屏、显示装置及制备显示屏的方法 - Google Patents

显示屏、显示装置及制备显示屏的方法 Download PDF

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Publication number
WO2019062188A1
WO2019062188A1 PCT/CN2018/089651 CN2018089651W WO2019062188A1 WO 2019062188 A1 WO2019062188 A1 WO 2019062188A1 CN 2018089651 W CN2018089651 W CN 2018089651W WO 2019062188 A1 WO2019062188 A1 WO 2019062188A1
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Prior art keywords
sub
display screen
pixel
region
area
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PCT/CN2018/089651
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English (en)
French (fr)
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赵影
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昆山国显光电有限公司
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Publication of WO2019062188A1 publication Critical patent/WO2019062188A1/zh
Priority to US16/669,548 priority Critical patent/US20200066816A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • the present application relates to the field of display, and in particular, to a display screen, a display device, and a method of preparing a display screen.
  • the display screen includes an effective display area and a non-display area, the effective display area has a display function, and the non-display area does not have a display function, and is generally used to set a function device, such as a front camera.
  • the effective display area can be used to display the human-machine interface and the applications provided to operate the human-machine interface.
  • the active display area can display a video played by the video playback application of the smartphone.
  • the presence of the non-display area reduces the screen ratio of the display, resulting in a poor user experience.
  • a display screen includes a light emitting layer including a first region provided with an opening for transmitting light and including a second region for display.
  • the light emitting layer includes a plurality of first regions and a plurality of second regions, and the first region and the adjacent one of the second regions form a first type of light emitting unit.
  • the number of the first type of light emitting units is plural.
  • the first type of light emitting unit comprises any one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
  • a ratio of an area of the first region to an area of the second region is 1:3 to 3:1.
  • a ratio of an area of the first region to an area of the second region is 1:2-2:1.
  • a ratio of an area of the first region to an area of the second region is 1:1.5-1.5:1.
  • the light emitting layer further includes a plurality of second type of light emitting units, and the second type of light emitting unit has the second area without the first area.
  • a plurality of said first type of light emitting units are brought together to form a light transmissive display area, and a plurality of said second type of light emitting units are brought together to form a display area.
  • a display device including:
  • the lower photosensitive module is capable of sensing light that is incident through the display screen.
  • the under-the-screen photosensitive module includes at least one of a photosensor and a front camera.
  • the under-the-screen photosensitive module is embedded 4 mm-6 mm below the display screen.
  • a method of making any of the foregoing display screens comprising:
  • the light-emitting layer material forming the light-emitting layer is not covered with the portion where the opening is located.
  • the luminescent layer includes a first region provided with an opening for transmitting light and includes a second region for display, the first region and the second region are arranged in combination to transmit external light to the inside of the display to provide a display under the display
  • the under-screen photosensitive module can be arranged under the display screen having a certain proportion of the first area. Therefore, the non-display area above the effective display area can be omitted, and the screen ratio can be enlarged.
  • FIG. 1 is a layered structural view of a display screen according to an embodiment of the present application.
  • FIG. 2 is a partial cross-sectional structure of a display screen according to an embodiment of the present application.
  • FIG. 3 is another partial cross-sectional structure of a display screen according to an embodiment of the present application.
  • a method of manufacturing a display screen can include the following steps:
  • the substrate 11 is prepared.
  • the substrate 11 has a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region.
  • a set of first sub-pixel regions, second sub-pixel regions, and third sub-pixel regions may constitute one pixel region.
  • the substrate 11 may have a plurality of pixel regions.
  • the first sub-pixel region may be a sub-pixel region that emits red light.
  • the second sub-pixel region may be a sub-pixel region that emits green light.
  • the third sub-pixel region may be a sub-pixel region that emits blue light.
  • the substrate 11 may be formed of a suitable material such as a glass material, a metal material, or a plastic material including polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide. .
  • a thin film transistor (TFT) may be disposed on the substrate 11.
  • an additional layer such as buffer layer 12 may be formed on substrate 11 prior to forming the TFT.
  • the buffer layer 12 may be formed on the entire surface of the substrate 11, or may be formed by being patterned.
  • the buffer layer 12 may be a layered structure formed of a single layer or a plurality of layers of a material such as PET, PEN, polyacrylate, and/or polyimide.
  • the buffer layer 12 may also be formed of silicon oxide or silicon nitride, or may comprise a composite layer of an organic material and/or an inorganic material.
  • the TFT can control the emission of each sub-pixel, or can control the amount of emission of each sub-pixel when it emits light.
  • the TFT may include a semiconductor layer 21, a gate electrode 22, a source electrode 23, and a drain electrode 24.
  • the semiconductor layer 21 may be formed of an amorphous silicon layer, a silicon oxide layer metal oxide or a polysilicon layer, or may be formed of an organic semiconductor material. In one embodiment, the semiconductor layer 21 includes a channel region and source and drain regions doped with dopants.
  • the semiconductor layer 21 can be covered with the gate insulating layer 25.
  • the gate electrode 22 may be disposed on the gate insulating layer 25.
  • the gate insulating layer 25 may cover the entire surface of the substrate 11.
  • the gate insulating layer 25 may be formed by patterning.
  • the gate insulating layer 25 may be formed of silicon oxide, silicon nitride, or other insulating organic or inorganic material in consideration of adhesion to an adjacent layer, formability of a stacked target layer, and surface flatness.
  • Gate electrode 22 may be covered by an interlayer insulating layer 26 formed of silicon oxide, silicon nitride, and/or other suitable insulating organic or inorganic materials.
  • a portion of the gate insulating layer 25 and the interlayer insulating layer 26 may be removed, and a contact hole is formed after the removal to expose a predetermined region of the semiconductor layer 21.
  • the source electrode 23 and the drain electrode 24 may contact the semiconductor layer 21 via the contact hole.
  • the source electrode 23 and the drain electrode 24 may be composed of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), ⁇ (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and copper (Cu) or other suitable metals
  • Al aluminum
  • platinum (Pt) palladium
  • silver Ag
  • gold Au
  • iridium (Ir) chromium
  • Li lithium
  • Ca calcium
  • Mo molybdenum
  • Ti titanium
  • W tungsten
  • Cu copper
  • a protective layer 27 formed of silicon oxide, silicon nitride, and/or other suitable insulating organic or inorganic material may cover the TFT.
  • the protective layer 27 covers all or part of the substrate 11. Since the TFT having a complicated layer structure is disposed under the protective layer 27, the top surface of the protective layer 27 may not be sufficiently flat. Therefore, it is necessary to form the planarization layer 28 on the protective layer 27 in order to form a sufficiently flat top surface.
  • a via hole may be formed in the protective layer 27 and the planarization layer 28 to expose the source electrode 23 and the drain electrode 24 of the TFT.
  • the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 are formed on the planarization layer 28.
  • the first sub-pixel electrode 31 is formed in the first sub-pixel region
  • the second sub-pixel electrode 32 is formed in the second sub-pixel region
  • the third sub-pixel electrode 33 is formed in the third sub-pixel region.
  • the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 may be formed simultaneously or synchronously.
  • Each of the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 may be electrically connected to the TFT through a via.
  • the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 are generally referred to as anodes.
  • Each of the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 may be formed as a transparent electrode (transflective electrode) or a reflective electrode.
  • the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 are formed as transparent electrodes, they may be made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), Indium oxide (In 2 O 3 ), indium gallium oxide (IGO) or aluminum zinc oxide (AZO) is formed.
  • the reflective electrode layer may be formed by superposing a reflective layer and an auxiliary layer.
  • the reflective layer may be silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), niobium (Nd), antimony (Ir), Any one of chromium (Cr) materials is formed alone or in any material mixture, and the auxiliary layer is made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), or the like. A transparent electrode material is formed.
  • the structures and materials of the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 are not limited thereto and may be varied.
  • a pixel defining layer (PDL) 41 may be formed.
  • the formed PDL simultaneously covers the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33.
  • the PDL may define a sub-pixel by having an opening corresponding to each sub-pixel (ie, exposing a central portion opening of each sub-pixel).
  • the PDL may be formed of a single material layer or a composite material layer of an organic material such as polyacrylate and polyimide or an inorganic material.
  • the PDL may be formed in such a manner that a layer of PDL is formed on the entire surface of the substrate 11 by using a material suitable for PDL to cover the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33. . Then, the PDL layer is patterned to expose central portions of the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33.
  • the luminescent material 51 can be formed by vapor-depositing a luminescent material.
  • the evaporated luminescent material covers a portion of the first sub-pixel electrode 31 that is not covered by the PDL layer, covers a portion of the second sub-pixel electrode 32 that is not covered by the PDL layer, and covers a portion of the third sub-pixel electrode 33 that is not covered by the PDL layer. And covering the top surface of the PDL layer.
  • a luminescent material that emits red, green, and blue light can be evaporated using a precision metal mask.
  • vapor deposition forms the counter electrode 61, and the counter electrode 61 covers the first sub-pixel region, the second sub-pixel region, and the third sub-pixel region.
  • the counter electrode 61 may be integrally formed with respect to a plurality of sub-pixels so as to cover the entire display area.
  • Counter electrode 61 is commonly referred to as a cathode.
  • the counter electrode 61 contacts the electrode supply line outside the display area, so that the electrode supply line can receive an electrical signal.
  • the counter electrode 61 may be formed as a transparent electrode or a reflective electrode.
  • the counter electrode 61 may include a material or a plurality of mixed materials deposited by depositing one of Li, Ca, LiF/Ca, LiF/Al, Al, Mg toward the light emitting layer.
  • a layer, and an auxiliary electrode or bus electrode line comprising a transparent (transflective) material of ITO, IZO, ZnO or In 2 O 3 .
  • the counter electrode 61 When the counter electrode 61 is formed as a reflective electrode, the counter electrode 61 may have a layer including one or more of Li, Ca, LiF/Ca, LiF/Al, Al, Ag, and Mg. It is to be understood that the configuration and material of the counter electrode 61 are not limited thereto.
  • Figure 2 shows a partial cross-sectional structure of the display. The TFT trace 71 and the sub-pixel 72 defined by the PDL layer are disclosed.
  • the display screen includes a light emitting layer including a first region provided with an opening 73 for light transmission and including a second region for display.
  • the sub-pixel 72 defined by the PDL layer is a central portion of the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 exposed in the PDL layer patterning process, and is in the vapor-emitting layer. Formed afterwards.
  • the opening 73 defined by the PDL layer is a sub-pixel formed by exposing a space portion between the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33 in the PDL layer patterning process. Electrode opening area.
  • the first sub-pixel electrode 31 in addition to exposing the central portions of the first sub-pixel electrode 31, the second sub-pixel electrode 32, and the third sub-pixel electrode 33, the first sub-pixel electrode 31, The space between the second sub-pixel electrode 32 and the third sub-pixel electrode 33 is exposed, that is, a region on the planarization layer 28 where the sub-pixel electrode is not formed is exposed.
  • the sub-pixel 72 and the opening 73 may be simultaneously formed in the PDL layer patterning process, but the preparation of the subsequent light-emitting layer and the counter electrode 61 is not performed on the opening 73. Therefore, the opening 73 in the present application is actually a hole structure on the planarization layer 28 without any electrode and film structure, and external light can enter the inside of the display screen through the opening 73 without any obstruction.
  • the light-emitting layer when the light-emitting layer is viewed as a layered structure, the light-emitting layer includes a second region for display.
  • the light-emitting layer when the light-emitting layer is viewed as a layered structure, the light-emitting layer includes a first region provided with an opening 73 for light transmission and includes a second region for display. It can be understood that the first area is for setting the opening 73 and the second area is for setting the sub-pixel 72.
  • the formation of the first region can be achieved by providing the opening 73 on the PDL layer
  • the formation of the second region can be achieved by providing the opening 73 on the PDL layer and performing evaporation in a subsequent process. It has been explained in detail in the preparation process of the foregoing display screen, and will not be described again here.
  • the luminescent layer includes a first region provided with an opening 73 for light transmission and includes a second region for display, the first region and the second region being arranged in combination, covered with a display screen, that is, If you look at it with the naked eye, the entire display can be displayed, the so-called full screen.
  • a display screen that is, If you look at it with the naked eye, the entire display can be displayed, the so-called full screen.
  • the traditional display screen in order to ensure that the front camera or other photosensitive function module can obtain a certain intensity of light, it is usually necessary to set a non-display area on the display screen, and arrange the front camera or the photosensitive function module in the non-display area. .
  • the front camera or other photosensitive function module can be hidden under the display screen having a certain proportion of the first area, and no need for the front camera or the photosensitive function module.
  • the position is reserved, so that the non-display area above the effective display area can be omitted, the screen ratio can be enlarged, and the use feeling can be optimized, thereby solving the technical problem that the presence of the non-display area causes the user to feel poorly.
  • the display screen may further include a substrate, a buffer layer, a TFT, a gate insulating layer, an interlayer insulating layer, a protective layer, a planarization layer, a pixel defining layer, and a counter electrode.
  • the TFT includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and the first sub-pixel electrode, the second sub-pixel electrode, and the third sub-pixel electrode are formed on the planarization layer.
  • the light emitting layer includes a plurality of first regions and a plurality of second regions, and one of the plurality of first regions and a corresponding one of the plurality of second regions The two regions form a first type of illumination unit.
  • the light emitting layer further includes a plurality of second type of light emitting units, each of the second type of light emitting units not having the first area.
  • the second type of light emitting unit includes a second area for display without a first area.
  • AMOLED Active Matrix Organic Light Emitting Diode
  • OLED organic light emitting diode
  • the size which determines the display technology of each pixel's luminous intensity.
  • the same driving algorithm may be used to control the illumination for the first type of illumination unit and the second type of illumination unit, or different driving algorithms may be used for the first type of illumination unit and the second type of illumination unit. Glowing.
  • the display portion of the display screen is not changed, that is, a plurality of second type of light-emitting units are disposed, and the front-end camera or the photosensitive function module is disposed in the display screen.
  • a plurality of first type of light emitting units are disposed at the position.
  • the number of the first type of light emitting units is plural. It will be appreciated that increasing the number of first type of lighting units can increase the intensity of illumination entering the display screen.
  • the edge of the display is usually used to set the front or photosensitive function module, so the number of the first type of light-emitting units is preferably arranged to cover the edge of the display.
  • the first type of light emitting unit comprises any one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
  • each of the first type of light emitting units is independently controlled to emit light, and therefore, the first type of light emitting units may include red sub-pixels, green sub-pixels, and blue sub-pixels. Either.
  • the first type of light-emitting units composed of the red sub-pixel, the green sub-pixel, and the blue sub-pixel are evenly distributed, and the effect of white balance can be achieved.
  • the ratio of the area of the first area to the area of the second area is 1:3-3:1; further, in the green sub-pixel, the area of the first area and the first The ratio of the area of the two regions is 1:2-2:1; further, in the blue sub-pixel, the ratio of the area of the first region to the area of the second region is 1:1.5-1.5:1.
  • the display can be transmitted with a certain intensity of light to meet the needs of the under-screen front camera or photosensitive function module. And it will not affect the display effect seen by the naked eye.
  • the area ratios of the sub-pixels of different colors are different, mainly considering that the luminous efficiencies of the luminescent materials of different colors are different, so as to balance the effect of the openings on the luminous efficiencies of the different color sub-pixels after the transparent openings are provided, It is ensured that when the first type of light-emitting unit and the second type of light-emitting unit are simultaneously displayed, the naked eye does not perceive the difference in color display.
  • the ratio of the area of the first region of the red sub-pixel, the green sub-pixel, and the blue sub-pixel of the first type of light-emitting unit to the area of the second region may be set to be the same, so as to facilitate batch Production and manufacturing.
  • the ratio of the area of the first area to the area of the second area may also be set according to actual needs.
  • a plurality of first type of light emitting units are gathered together to form a light transmissive display area, and a plurality of second type of light emitting units are gathered together to form a display area.
  • the first type of light emitting unit and the second type of light emitting unit may be set according to light intensity requirements of different regions or portions of the display screen.
  • a plurality of first-type light-emitting units are disposed at positions disposed in the display screen for the front camera or the photosensitive function module, and are gathered together to form a light-transmitting display area. This can meet the illumination requirements of the front camera or the photosensitive function module, and in the display area or portion of the display, a plurality of second type of light emitting units are gathered together to form a display area.
  • a display device comprising:
  • a display screen comprising a light emitting layer, the light emitting layer comprising a first region provided with an opening 73 for light transmission and comprising a second region for display;
  • the light-sensitive module under the screen can sense the light that illuminates through the display screen.
  • the front part has been described in detail for the display screen, the first area and the second area, and will not be described again here.
  • the display device herein can be understood as a stand-alone product such as a mobile phone, a tablet computer or the like.
  • the display device may also include a DC power source, a DC power source or an AC power interface, a memory, a processor, and the like.
  • the DC power supply can be a lithium battery in a specific application.
  • the DC power supply or AC power interface can be a mirco-USB plug interface in a specific application.
  • the memory can be a flash chip.
  • the processor can be a CPU with a computing function, a single chip microcomputer, or the like.
  • the under-screen photosensitive module includes at least one of a photo sensor and a front camera.
  • the photosensor may specifically be an infrared sensor for measuring whether a human face is close to the display screen. It can be understood that the on-screen photosensitive module can be set as needed.
  • the light-sensitive module under the screen may be a photoelectric sensor, a front camera, or a photoelectric sensor and a camera.
  • the under-screen photosensitive module is embedded under the display screen by 4 mm to 6 mm. It can be understood that in the display screen, as the depth of light propagation becomes larger, the illumination intensity is attenuated.
  • the photosensitive module is embedded in the depth of 4 mm to 6 mm under the display screen, the photosensitive module under the screen can be ensured to be stable. Assembled, the light intensity can be guaranteed to be within the required range.

Abstract

一种显示屏、显示装置及制备显示屏的方法。显示屏包括发光层，发光层包括设置有用于透光的开口（73）的第一区域，和用于显示的第二区域。第一区域和第二区域组合排布，布满显示屏，从而解决非显示区的存在导致使用者的使用感受不佳的技术问题。

Description

显示屏、显示装置及制备显示屏的方法 技术领域
本申请涉及显示领域，特别涉及一种显示屏、显示装置及制备显示屏的方法。
背景技术
在传统技术中，显示屏包括有效显示区和非显示区，有效显示区具有显示功能，非显示区不具备显示功能，一般用于设置功能器件，如前置摄像头。对于具有触控功能的智能手机而言，有效显示区可以用于展示人机界面，以及为操作人机界面提供的应用。例如，有效显示区能够显示通过智能手机的视频播放应用播放的一段视频。然而，非显示区的存在会降低显示屏的屏占比，致使使用者的使用感受不佳。
发明内容
基于此，有必要针对显示屏的屏占比低的技术问题，提供一种显示屏、显示装置及制备显示屏的方法。
一种显示屏，包括发光层，所述发光层包括设置有用于透光的开口的第一区域并包括用于显示的第二区域。
在一个实施例中，所述发光层包括多个第一区域和多个第二区域，一个所述第一区域与相邻的一个所述第二区域形成一个第一类发光单元。
在一个实施例中，所述第一类发光单元的数量为多个。
在一个实施例中，所述第一类发光单元包括红色子像素、绿色子像素和蓝色子像素中的任一者。
在一个实施例中，在所述红色子像素中，所述第一区域的面积与所述第二区域的面积的比值为1:3-3:1。
在一个实施例中，在所述绿色子像素中，所述第一区域的面积与所述第二区域的面积的比值为1:2-2:1。
在一个实施例中，在所述蓝色子像素中，所述第一区域的面积与所述第二区域的面积的比值为1:1.5-1.5:1。
在一个实施例中，所述发光层还包括多个第二类发光单元，所述第二类发光单元具有所述第二区域，不具有所述第一区域。
在一个实施例中，多个所述第一类发光单元聚集在一起形成透光显示区，多个所述第二类发光单元聚集在一起形成显示区。
在一个实施例中，提供一种显示装置，包括：
前述任一显示屏；
屏下光敏模块，所述屏下光敏模块能够感应穿过所述显示屏而照射进来的光。
在一个实施例中，所述屏下光敏模块包括光电传感器和前置摄像头中的至少一种。
在一个实施例中，所述屏下光敏模块嵌入所述显示屏下4mm-6mm。
在一个实施例中，提供一种制备前述任一显示屏的方法，包括：
在形成像素限定层时，在所述像素限定层形成用于透光的开口；
在形成发光层时，使形成所述发光层的发光层材料不覆盖所述开口所在的部分。
本申请提供的技术方案至少具有如下有益技术效果：
发光层包括设置有用于透光的开口的第一区域并包括用于显示的第二区域，第一区域和第二区域组合排布，可将外部光线输送至显示屏内部，为显示屏下方提供必要强度的光线，可在具有一定第一区域占比的显示屏下布置屏下光敏模块。因此可以省去有效显示区上方的非显示区，扩大屏占比。
附图说明
图1为本申请实施例提供的显示屏的层状结构图；
图2为本申请实施例提供的显示屏的局部剖面结构；
图3为本申请实施例提供的显示屏的另一个局部剖面结构。
其中：
11     基板
12     缓冲层
21     半导体层
22     栅电极
23     源电极
24     漏电极
25     栅极绝缘层
26     层间绝缘层
27     保护层
28     平坦化层
31     第一子像素电极
32     第二子像素电极
33     第三子像素电极
41     像素限定层
51     发光层
61     对电极
71     TFT走线
72     子像素
73     开口
具体实施方式
一种制造显示屏的方法，可以包括以下步骤：
请参照图1，首先，准备基板11。基板11具有第一子像素区域、第二子像素区域和第三子像素区域。一组第一子像素区域、第二子像素区域和第三子像素区域可以构成一个像素区域。基板11可以具有多个像素区域。在一个实施例中，第一子像素区域可以是发射红光的子像素区域。第二子像素区域可以是发射绿光的子像素区域。第三子像素区域可以是发射蓝光的子像素区域。
基板11可以由诸如玻璃材料、金属材料或包括聚对苯二甲酸乙二醇酯 (PET)、聚萘二甲酸乙二醇酯(PEN)或聚酰亚胺等的塑胶材料中合适的材料形成。薄膜晶体管(thin film transistor，TFT)可以设置在基板11上。在一个实施例中，在形成TFT之前，可以在基板11上形成诸如缓冲层12等的另外的层。缓冲层12可以形成在基板11的整个表面上，也可以通过被图案化来形成。
缓冲层12可以为层状结构，层状结构由PET、PEN、聚丙烯酸酯和/或聚酰亚胺等材料以单层或多层堆叠的形式形成。缓冲层12还可以由氧化硅或氮化硅形成，或者可以包括有机材料和/或无机材料的复合层。
TFT可以控制每个子像素的发射，或者可以控制每个子像素在发射光时发射的量。TFT可以包括半导体层21、栅电极22、源电极23和漏电极24。
半导体层21可以由非晶硅层、氧化硅层金属氧化物或多晶硅层形成，或者可以由有机半导体材料形成。在一个实施例中，半导体层21包括沟道区和掺杂有掺杂剂的源区与漏区。
可以利用栅极绝缘层25覆盖半导体层21。栅电极22可以设置在栅极绝缘层25上。大体上，栅极绝缘层25可以覆盖基板11的整个表面。在一个实施例中，可以通过图案化来形成栅极绝缘层25。考虑到与相邻层的粘合、堆叠目标层的可成形性和表面平整性，栅极绝缘层25可以由氧化硅、氮化硅或其他绝缘有机或无机材料形成。栅电极22可以被由氧化硅、氮化硅和/或其他合适的绝缘有机或无机材料形成的层间绝缘层26覆盖。可以去除栅极绝缘层25和层间绝缘层26的一部分，在去除之后形成接触孔以暴露半导体层21的预定区域。源电极23和漏电极24可以经由接触孔接触半导体层21。考虑到导电性，源电极23和漏电极24可以由包括铝(Al)、铂(Pt)、钯(Pd)、银(Ag)、镁(Mg)、金(Au)、镍(Ni)、钕(Nd)、铱(Ir)、铬(Cr)、锂(Li)、钙(Ca)、钼(Mo)、钛(Ti)、钨(W)和铜(Cu)或其他合适的金属中的单一材料层或复合材料层形成。
由氧化硅、氮化硅和/或其他合适的绝缘有机或无机材料形成的保护层27可以覆盖TFT。保护层27覆盖基板11的全部或局部。由于具有复杂的层结构的TFT设置在保护层27下方，使得保护层27的顶表面可能不是足够平坦。因此，有必要在保护层27上形成平坦化层28，以便形成足够平坦的顶表面。
在形成平坦化层28后，可以在保护层27和平坦化层28中形成通孔，以暴 露TFT的源电极23和漏电极24。
然后，在平坦化层28上形成第一子像素电极31、第二子像素电极32和第三子像素电极33。第一子像素电极31形成在第一子像素区域，第二子像素电极32形成在第二子像素区域，第三子像素电极33形成在第三子像素区域。这里，第一子像素电极31、第二子像素电极32和第三子像素电极33可以同时地或同步地形成。第一子像素电极31、第二子像素电极32和第三子像素电极33中的每一者可以经过通孔电连接到TFT。这里的第一子像素电极31、第二子像素电极32、第三子像素电极33通常被称为阳极。
第一子像素电极31、第二子像素电极32和第三子像素电极33均可以被形成为透明电极(透反射式电极)或反射电极。当第一子像素电极31、第二子像素电极32和第三子像素电极33被形成为透明电极时，可以由氧化铟锡(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)、氧化铟(In 2O 3)、氧化铟镓(IGO)或氧化铝锌(AZO)形成。当第一子像素电极31、第二子像素电极32和第三子像素电极33被形成为反射电极时，可由反射层和辅助层相叠加形成反射电极层。其中，反射层可由银(Ag)、镁(Mg)、铝(Al)、铂(Pt)、钯(Pd)、金(Au)、镍(Ni)、钕(Nd)、铱(Ir)、铬(Cr)中的任一种材料单独形成或任意材料混合形成，辅助层由氧化铟锡(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)、氧化铟(In 2O 3)等透明电极材料形成。这里，第一子像素电极31、第二子像素电极32和第三子像素电极33的结构和材料不限于此，并且可以变化。
在形成第一子像素电极31、第二子像素电极32和第三子像素电极33之后，如图1所示，可以形成像素限定层(PDL)41。形成的PDL同时覆盖第一子像素电极31、第二子像素电极32和第三子像素电极33。PDL可以通过具有与每个子像素对应的开口(即暴露每个子像素的中心部分开口)来限定子像素。PDL可以由有机材料(例如聚丙烯酸酯和聚酰亚胺)或无机材料的单一材料层或复合材料层形成。PDL可以以下面的方式形成：在基板11的整个表面上通过利用适于PDL的材料，形成PDL的层，以覆盖第一子像素电极31、第二子像素电极32和第三子像素电极33。然后，将PDL层图案化，以暴露第一子像素电极31、第二子像素电极32和第三子像素电极33的中心部分。
可以蒸镀发光材料形成发光层51。蒸镀的发光材料覆盖第一子像素电极31没有被PDL层覆盖的一部分，覆盖第二子像素电极32没有被PDL层覆盖的一部分，覆盖第三子像素电极33没有被PDL层覆盖的一部分，并且覆盖PDL层的顶表面。可以使用精密金属掩模板蒸镀发射红光、绿光和蓝光的发光材料。
然后，蒸镀形成对电极61，对电极61覆盖第一子像素区域、第二子像素区域和第三子像素区域。对电极61可以相对多个子像素一体形成，从而覆盖整个显示区域。对电极61通常被称为阴极。
对电极61接触显示区域外侧的电极供电线，从而电极供电线可以接收电信号。对电极61可以被形成为透明电极或反射电极。当对电极61被形成为透明电极时，对电极61可以包括沿朝着发光层方向沉积Li、Ca、LiF/Ca、LiF/Al、Al、Mg中的一种材料或多种混合材料而形成的层，以及包括由ITO、IZO、ZnO或In 2O 3的透明(透反射式)材料形成的辅助电极或汇流电极线。当对电极61被形成为反射电极时，对电极61可以具有包括Li、Ca、LiF/Ca、LiF/Al、Al、Ag和Mg中的一种或多种材料的层。可以理解，对电极61的构造和材料不限于此。如图2所示为显示屏的局部剖面结构。图中揭示了TFT走线71和由PDL层限定的子像素72。
在本申请提供的一种实施例中，显示屏包括发光层，发光层包括设置有用于透光的开口73的第一区域并包括用于显示的第二区域。
如图3所示为显示屏的局部剖面结构，图中揭示了TFT走线71、由PDL层限定的子像素72和开口73。其中，由PDL层限定的子像素72是在PDL层图案化工艺中暴露的第一子像素电极31、第二子像素电极32和第三子像素电极33的中心部分，是在蒸镀发光层后形成的。由PDL层限定的开口73为在PDL层图案化工艺中，将第一子像素电极31、第二子像素电极32和第三子像素电极33之间的间隔部分暴露出来而形成的无子像素电极开口区。也就是说，本申请在PDL层图案化工艺中，除了将第一子像素电极31、第二子像素电极32和第三子像素电极33的中心部分暴露，还将第一子像素电极31、第二子像素电极32和第三子像素电极33之间的间隔区域暴露，即将平坦化层28上没有形成子像素电极的区域暴露出来。子像素72和开口73可在PDL层图案化工艺中同时 形成，但开口73上并不进行后续发光层和对电极61的制备。因此，本申请中的开口73实际是平坦化层28上没有任何电极和膜层结构的孔洞结构，外部光线可通过开口73完全无遮挡的进入到显示屏内部。
在图2中，将发光层作为层状结构来看的话，发光层包括用于显示的第二区域。在图3中，将发光层作为层状结构来看的话，发光层包括设置有用于透光的开口73的第一区域并包括用于显示的第二区域。可以理解的是，第一区域用于设置开口73，而第二区域用于设置子像素72。
由前述内容可知，第一区域的形成可以借由在PDL层上设置开口73来实现，而第二区域的形成可以借由在PDL层上设置开口73并且在后续工艺中进行蒸镀来实现。在前述显示屏的制备过程中已经做了详细阐释，这里不再赘述。
第一区域的尺寸和子像素72的尺寸在一个级别，通常在微米级别，需要借助放大镜才能很好的观察。在本申请中，发光层包括设置有用于透光的开口73的第一区域并包括用于显示的第二区域，第一区域和第二区域组合排布，布满显示屏，也就是说，用肉眼来观察的话，整个显示屏都是可以显示的，即所谓全面屏。在传统的显示屏中，为了保证前置摄像头或其他光敏功能模块能够获取到一定强度的光线，通常需要在显示屏上设置有非显示区域，将前置摄像头或光敏功能模块布置在非显示区域。而在本申请中，由于具有能够透光的第一区域，可将前置摄像头或其他光敏功能模块隐藏在具有一定第一区域占比的显示屏下，不用再为前置摄像头或光敏功能模块预留位置，因此可以省去有效显示区上方的非显示区，扩大屏占比，优化使用感受，从而，可以解决非显示区的存在导致使用者的使用感受不佳的技术问题。
此外，显示屏还可以包括基板、缓冲层、TFT、栅极绝缘层、层间绝缘层、保护层、平坦化层、像素限定层和对电极。其中，TFT包括半导体层、栅电极、源电极和漏电极，平坦化层上形成第一子像素电极、第二子像素电极和第三子像素电极。具体地，基板、缓冲层、TFT、栅极绝缘层、层间绝缘层、保护层、平坦化层、像素限定层、发光层、对电极、第一子像素电极、第二子像素电极和第三子像素电极的结构关系在前述显示屏的制备过程中已经做了详细阐释，这里不再赘述。
在一个实施例中，发光层包括多个第一区域和多个第二区域，所述多个第一区域中的一个第一区域与所述多个第二区域中的相邻对应的一个第二区域形成一个第一类发光单元。
在一个实施例中，发光层还包括多个第二类发光单元，各第二类发光单元均不具有所述第一区域。例如在图2中，第二类发光单元包括用于显示的第二区域，而不具有第一区域。
主动矩阵有机发光二极管(Active Matrix Organic Light Emitting Diode，AMOLED)是将有机发光二极管(Organic Light Emitting Diode，OLED)像素淀积或集成在TFT阵列上，通过TFT阵列来控制流入每个OLED像素的电流大小，从而决定每个像素发光强度的显示技术。在本申请提供的实施方式中，可以对第一类发光单元和第二类发光单元使用相同的驱动算法控制发光，也可以对第一类发光单元和第二类发光单元使用不同的驱动算法控制发光。
在具体的应用中，例如，对于显示屏而言，对显示屏的显示部分不进行改变，即布设多个第二类发光单元，而对显示屏中的供前置摄像头或光敏功能模块设置的位置布设多个第一类发光单元。这样的好处是：前置摄像头或光敏功能模块需要一定的光照强度或者感光量才能达到良好的功能效果，通过将前置摄像头或光敏功能模块设置在第一类发光单元的下层，由于第一类发光单元中的第一区域的开口73可以透光，可有效地提高光照强度，从而可以满足前置摄像头或光敏功能模块所要求的光照强度。
进一步地，在本申请提供的一种实施例中，第一类发光单元的数量为多个。可以理解的是，提高第一类发光单元的数量可以提高进入显示屏的光照强度。显示屏的边缘通常用来设置前置或光敏功能模块，故第一类发光单元的数量以布设满显示屏的边缘为宜。
在一个实施例中，第一类发光单元包括红色子像素、绿色子像素和蓝色子像素中的任一者。
由前述显示屏的制造方法以及AMOLED技术可知，每一个第一类发光单元是被独立控制进行发光的，因此，第一类发光单元可以包括红色子像素、绿色子像素和蓝色子像素中的任一者。由红色子像素、绿色子像素和蓝色子像素构 成的第一类发光单元平均分布，可以达成白平衡的效果。
在一个实施例中，在红色子像素中，第一区域的面积与第二区域的面积的比值为1:3-3:1；进一步地，在绿色子像素中，第一区域的面积与第二区域的面积的比值为1:2-2:1；更进一步地，在蓝色子像素中，第一区域的面积与第二区域的面积的比值为1:1.5-1.5:1。在上述比值范围内，可以保证显示屏能够透过一定强度的光，以满足屏下前置摄像头或光敏功能模块的需要。并且不会影响肉眼看到的显示效果。不同颜色子像素的面积比值不同，主要是考虑到不同颜色的发光物质的发光效率是有差别的，以便平衡在设置透光开口后，减小开口对不同颜色子像素的发光效率的影响，以达到保证当第一类发光单元和第二类发光单元同时显示时，肉眼不会感知到颜色显示的差别。
在本申请提供的实施方式中，可以将第一类发光单元的红色子像素、绿色子像素和蓝色子像素的第一区域的面积与第二区域的面积的比值设置为相同，以便于批量生产及制造。在本申请提供的替代实施方式中，还可以根据实际需要设置第一区域的面积与第二区域的面积的比值。
在本申请提供的一种实施例中，在显示屏中，多个第一类发光单元聚集在一起形成透光显示区，多个第二类发光单元聚集在一起形成显示区。
具体地，可以根据显示屏的不同区域或部位的光照强度需求设置第一类发光单元和第二类发光单元。在具体的应用中，对于显示屏中的供前置摄像头或光敏功能模块设置的位置布设多个第一类发光单元，聚集在一起形成透光显示区。这样可以满足前置摄像头或光敏功能模块的光照需求，而在显示屏中的用于显示的区域或部位，则将多个第二类发光单元聚集在一起形成显示区。
在本申请提供的一种实施例中，还提供一种显示装置，该显示装置包括：
显示屏，显示屏包括发光层，发光层包括设置有用于透光的开口73的第一区域并包括用于显示的第二区域；
屏下光敏模块，屏下光敏模块能感应穿过显示屏而照射进来的光。
对于显示屏、第一区域和第二区域，前面部分已经做了详细说明，此处不再赘述。
可以理解的是，这里的显示装置可以理解为一种独立的产品，例如手机、 平板电脑等。显示装置还可以包括直流电源、直流电源或交流电源接口、存储器、处理器等。直流电源在具体的应用中可以为锂电池。直流电源或交流电源接口在具体的应用中可以为mirco-USB插接口。存储器可以为闪存芯片。处理器可以为具有运算功能的CPU、单片机等。
在本申请提供的一种实施例中，屏下光敏模块包括光电传感器和前置摄像头中的至少一种。光电传感器具体的可以是用于测量人面部是否靠近显示屏的红外传感器。可以理解，屏下光敏模块可以根据需要设置。例如，屏下光敏模块可以为光电传感器，也可以为前置摄像头，还可以是包括光电传感器和摄像头两种。
在本申请提供的一种实施例中，屏下光敏模块嵌入显示屏下4mm-6mm。可以理解的是，在显示屏内，随着光传播的深度逐渐变大，光照强度在衰减，当屏下光敏模块嵌入显示屏下4mm-6mm的深度时，既可以保证屏下光敏模块稳定的组装，又可以保证光照强度在需要的范围之内。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (13)

  1. 一种显示屏，其中，包括发光层，所述发光层包括设置有用于透光的开口的第一区域并包括用于显示的第二区域。
  2. 根据权利要求1所述的显示屏，其中，所述发光层包括多个第一区域和多个第二区域，
    一个所述第一区域与相邻的一个所述第二区域形成一个第一类发光单元。
  3. 根据权利要求2所述的显示屏，其中，所述第一类发光单元的数量为多个。
  4. 根据权利要求3所述的显示屏，其中，所述第一类发光单元包括红色子像素、绿色子像素和蓝色子像素中的任一者。
  5. 根据权利要求4所述的显示屏，其中，在所述红色子像素中，所述第一区域的面积与所述第二区域的面积的比值为1:3-3:1。
  6. 根据权利要求4所述的显示屏，其中，在所述绿色子像素中，所述第一区域的面积与所述第二区域的面积的比值为1:2-2:1。
  7. 根据权利要求4所述的显示屏，其中，在所述蓝色子像素中，所述第一区域的面积与所述第二区域的面积的比值为1:1.5-1.5:1。
  8. 根据权利要求1到7中任一项所述的显示屏，其中，所述发光层还包括多个第二类发光单元，所述第二类发光单元具有所述第二区域，不具有所述第一区域。
  9. 根据权利要求8所述的显示屏，其中，多个所述第一类发光单元聚集在一起形成透光显示区，多个所述第二类发光单元聚集在一起形成显示区。
  10. 一种显示装置，其中，包括：
    权利要求1到9中任一项所述的显示屏；
    屏下光敏模块，所述屏下光敏模块能够感应穿过所述显示屏而照射进来的光。
  11. 根据权利要求10所述的显示装置，其中，所述屏下光敏模块包括光电传感器和前置摄像头中的至少一种。
  12. 根据权利要求10或11所述的显示装置，其中，所述屏下光敏模块嵌 入所述显示屏下4mm-6mm。
  13. 一种制备权利要求1到9中任一项所述的显示屏的方法，其中，包括：
    在形成像素限定层时，在所述像素限定层形成用于透光的开口；
    在形成发光层时，使形成所述发光层的发光层材料不覆盖所述开口所在的部分。
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