WO2019048367A1 - Dispositif pour déposer une couche structurée sur un substrat en utilisant un masque - Google Patents

Dispositif pour déposer une couche structurée sur un substrat en utilisant un masque Download PDF

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Publication number
WO2019048367A1
WO2019048367A1 PCT/EP2018/073588 EP2018073588W WO2019048367A1 WO 2019048367 A1 WO2019048367 A1 WO 2019048367A1 EP 2018073588 W EP2018073588 W EP 2018073588W WO 2019048367 A1 WO2019048367 A1 WO 2019048367A1
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WO
WIPO (PCT)
Prior art keywords
frame
mask
heating
substrate
mask frame
Prior art date
Application number
PCT/EP2018/073588
Other languages
German (de)
English (en)
Inventor
Dietmar Keiper
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Priority to KR1020207007332A priority Critical patent/KR102699514B1/ko
Publication of WO2019048367A1 publication Critical patent/WO2019048367A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the invention relates to a device for depositing layers laterally structured by the use of masks on at least one substrate, in particular by feeding a vapor into a deposition chamber and condensation of the vapor on the substrate, comprising a substrate holder which can be cooled by means of coolants for holding the substrate and a mask attached to a mask frame for resting on the substrate.
  • WO 2012/175128 AI is described, a vapor of an organic material is generated, which is fed by an actively heated gas inlet member, as described for example in DE 10 2014 116 991 AI, in a Deposi- tion chamber of a deposition device.
  • an actively heated gas inlet member as described for example in DE 10 2014 116 991 AI
  • a Deposi- tion chamber of a deposition device Vertically below the gas inlet member is a cooled by means of coolants to a temperature below the condensation temperature of the vapor substrate holder, on which a substrate rests, which is coated with the organic starting material.
  • the organic starting material is molecules that glow in the condensed state by passage of a current.
  • Such OLEDs are used for the production of screens. Different organic starting materials are used to make red, green and blue pixels. Shadow masks are used for the lateral structuring of the layers deposited on the substrate in pixel raster.
  • the material thickness of such a mask is between 1 ⁇ and 100 ⁇ . Typical are 40 ⁇ .
  • the structure size of the masked structures is a few ⁇ .
  • the surfaces of the substrate holder or the surfaces of the masks can be in the square meter area.
  • US 2005/0037136 Al describes a device for depositing organic layers with a mask, which is mounted below a mask holder.
  • the mask holder has coolant for cooling the mask and heating means for heating the side of the mask holder facing away from the coolant.
  • US 2013/0040054 Al describes a device for depositing layers on substrates which lie on cooled substrate holders, wherein a shielding plate between the substrate holder and a heated gas inlet member can be brought.
  • the invention has for its object to further develop the genus in modern device use advantageous and in particular to provide measures by which in a reproducible manner exactly structured layers can be deposited on the substrate.
  • the problem is solved by the invention specified in the claims, wherein the dependent claims represent not only advantageous developments of the main claim but also independent solutions to the problem.
  • the invention relates to a manufacturing method for the production of self-luminous displays, which are provided with organic light-emitting diodes.
  • the deposition of the OLEDs takes place in a process chamber of a reactor, in which there is a substrate holder, on which the coating is coated. tende, large-area substrate rests.
  • the substrate holder is cooled so that the organic starting material fed into the process chamber through a heated gas inlet member can condense on the surface of the substrate.
  • the process chamber is to be set up preferably, but not exclusively, such that deposition, in particular condensation of the organic starting material takes place only on the substrate or on the mask resting on the substrate, but not at other locations in the process chamber.
  • deposition in particular condensation of the organic starting material takes place only on the substrate or on the mask resting on the substrate, but not at other locations in the process chamber.
  • a deposition of the starting material at other locations within the process chamber could have the consequence that the landfill evaporates during the deposition of other layers using other organic starting materials and leads to an unwanted contamination of the steam.
  • a mask frame surrounding the heating frame is to be avoided that the steam fed through the gas inlet member deposited at locations within the deposition chamber where the landfill may possibly evaporate again.
  • a thermal insulating means extending between the heating frame and the mask frame, it is intended to prevent the mask frame from being heated or to cool the heating frame in its region adjacent to the mask frame below the deposition temperature.
  • the mask frame may rest on a cooling frame cooled by means of coolants.
  • the support frame surrounds the cooled substrate holder.
  • the mask When the mask is a 1 to 100 ⁇ strong, structured by grid-like opening patterned film, which is brought into contact with the substrate surface.
  • Each of the apertures represents one pixel, for example, red, blue and green pixels are juxtaposed and deposited in successive coating steps.
  • the light-emitting, in particular OLED pixels are not limited to these colors or color combination.
  • the pixels can also have other colors or shades.
  • the mask must not warp laterally during use, so that the edge of the OLED pixels are deposited at the prescribed locations. It is provided in particular that the mask is made of Invar, a material which has a nearly vanishing thermal expansion coefficient in certain temperature ranges.
  • the thermal expansion in the temperature range when using the mask must be less than 10 .mu.m, preferably less than 1 .mu.m.
  • the thermal separation of mask frame and heating frame is to be achieved that heats the mask frame only slightly and on the other hand only slightly cools the edge of the heating frame.
  • the insulating means may be formed by an insulating body which surrounds the mask frame or the substrate holder framed by the mask frame in a frame-like manner extending in a horizontal plane.
  • the insulating body may have one or more shielding plates.
  • the shielding plates have surfaces pointing away from one another which can be highly reflective and in particular have an emission coefficient of less than 0.04. They can be high gloss coated.
  • the broad side surfaces have, on the one hand, in the direction of the heating frame and, on the other hand, in the direction of the mask frame. It is further preferably provided that the thermal conductivity of the shielding plates is low.
  • the shielding plates can be made for this purpose, for example, of a foamed material, a foamed plastic or a foamed metal.
  • the shielding plates may be formed by an insulating body as a unit of material. For example, in an insulating body grooves are cut so that ribs remaining between the grooves form the shielding plates.
  • the shielding plates then project in a substantially comb-like manner from a support section of the insulation body.
  • the insulating body can also be cast.
  • the shielding plates are made of metal and have a metallic surface coating.
  • the surface coating may be a gold coating.
  • the insulation body is connected to the mask frame in the same material-like manner, for example, the insulation body can form a shielding plate, which is formed by introducing a groove from the mask frame.
  • the insulating body can also be associated with the heating frame in the same material.
  • a system of a plurality of mutually parallel and spaced apart shielding plates may surround the mask frame in a frame-like manner, wherein the shielding plates extend in vertical planes.
  • the insulating body is in a planteleitthetic to the support frame, which in turn is cooled with a coolant.
  • the insulating body is covered by the edge of the mask.
  • the thermal separation of the heating frame and mask frame can also be realized by a gap between the mask frame and heating frame.
  • the mutually facing surfaces of the heating frame and the mask frame can then be coated high gloss and / or polished so that they have a minimum reflection coefficient.
  • the outer edge of the mask extends at least partially over the insulating body.
  • the mask may extend to the outer edge of the mask frame.
  • a lateral temperature gradient arises on the outer edge of the mask arrangement, which is changed in particular, but not necessarily, after each coating step, the temperature of the mask arrangement being higher at the radially outer locations can be as the condensation temperature.
  • the temperature gradient is sufficiently steep, so that over the entire mask surface, the surface temperature of the mask is sufficiently below the condensation temperature.
  • the invention further relates to a method for depositing layers using the device described above, wherein the mask frame is heated so that its temperature is below the condensation temperature and the heating frame is heated so that its temperature above the condensation temperature of the vapor lies. It forms a temperature gradient, in which the location of the condensation temperature is in the range between mask frame and heating frame.
  • the condensation point is in the region of the insulating means, in particular in the region of the insulating body.
  • the mask frame preferably extends in a horizontal plane along a circumferential line which surrounds the substrate holder so that the substrate holder is framed by the mask frame. The edges of the mask are attached to the mask frame.
  • the mask frame may be a rectangular frame surrounded by a rectangular heating frame.
  • FIG. 1 shows a cross section through a housing 1 of a reactor for depositing one or more OLED layers, 2 enlarges the detail II in FIG. 1 of a first exemplary embodiment
  • FIG. 3 shows a representation according to FIG. 2 of a second exemplary embodiment
  • FIG. 5 is a view according to Figure 2 of a third embodiment
  • FIG. 6 is a view according to Figure 2 of a fourth embodiment
  • FIG. 7 shows a representation according to FIG. 2 of a fifth exemplary embodiment
  • FIG. 7a shows the detail indicated by Vlla in FIG. 7,
  • Fig. 8 is a representation according to Figure 2 of a sixth embodiment.
  • Fig. 9 is a representation according to Figure 2 of a seventh embodiment.
  • the housing shown only schematically in Figure 1 has gas-tight walls, which are designed so that the housing interior can be evacuated is.
  • a gas inlet member 2 which has a gas distribution chamber which is fed by a steam feed opening 3. Through the steam feed opening 3, a transported by a carrier gas, such as a noble gas or H 2 or N 2 transported organic vapor into the gas inlet member 2.
  • the gas inlet member 2 has a bottom plate, which forms a gas outlet surface 4, which faces a process chamber 19.
  • the gas outlet surface 4 has a plurality of shower head-like arranged gas outlet openings 5, through which the vapor from the gas inlet member 2 can enter the process chamber 19.
  • the gas outlet plate 5 having gas outlet plate has tempering 6, through which a temperature control can flow to heat the gas inlet member 2 and in particular to the process chamber 19 facing gas outlet surface 4 to a temperature which is above the condensation temperature of the vapor.
  • a temperature control and electrical current can be used, which flows through a heating element.
  • a heating zone 28 is arranged around the gas outlet member 2.
  • This is a heating frame, which is kept at a temperature which is above the condensation temperature of the steam by means of suitable tempering means, for example likewise a heat transfer liquid or else an electric heater.
  • a substrate holder 21 which extends substantially over the entire surface of the gas outlet surface 4.
  • the size of a support surface for a substrate 20 that rests on the substrate holder 21 may be in the range of one square meter or larger. The area may also be less than 1 m 2 , for example in the range of 0.04 m 2 .
  • the steam fed into the process chamber 19 is to be deposited on the substrate 20 laterally structured. This is done by condensing on, why cooling means 22 are provided with which the support surface for the substrate 20 of the substrate holder 21 is cooled to a temperature below the deposition temperature of the steam.
  • the temperature of the gas inlet member 2 and the heating zone 28 is greater than 100 ° C, 150 ° C or 200 ° C
  • the temperature of the Substratauflage Structure is less than 0 ° C, 10 ° C or 20 ° C.
  • the temperature of the Substratauflage Structure may also be less than 100 ° C.
  • the temperature of the substrate support surface is 20 ° C.
  • a mask arrangement 7 is provided.
  • the mask assembly 7 consists of a mask frame 10 surrounding the substrate holder 21.
  • the mask holder 10 carries the mask made of Invar, which is a film with a material thickness of 10 ⁇ to 100 ⁇ .
  • the mask has a plurality of regularly arranged mask openings 9 and acts as a shadow mask.
  • An edge region 8 'of the mask 8 is attached to the mask frame 10 such that the mask 8 only minimally sags in the state detached from the substrate 20.
  • the mask frame 10 is supported by a support frame 23.
  • the support frame 23 has a bearing surface which has at least some sections against which sections of the mask frame 10 lie flat, so that heat transfer can take place.
  • the support frame 23 has tempering means to cool the support frame 23.
  • a temperature control channel 24 is shown for this purpose, through which a temperature control medium can flow. It may be the same temperature control, which also flows through the temperature control channels 22 of the substrate holder 21.
  • the mask assembly 7 is surrounded by a heating frame 25.
  • the heating frame 25 can be heated by means of tempering to a temperature which is above 200 ° C.
  • heating means 18 in the form of temperature control channels are shown in the figures, through which a heating medium can flow. But it is also provided here and in particular for heating the gas outlet surface 4, that the heating energy is supplied electrically, so that the temperature control means are heating wires.
  • heating frame 25 is thermally separated from the mask frame 10.
  • An edge surface 25 'of the heating frame 25 forms a wall of a gap gap 26.
  • the opposite wall of the gap 26 is in the embodiment shown in Figure 2 of a side surface of the Mask frame 10 is formed.
  • the gap 26 thus forms an insulating means.
  • the two gap walls pointing toward one another can be made highly polished, for example gold-plated and / or polished.
  • the emission coefficient of the layer can, but need not be, less than 0.04.
  • an insulating body is shown schematically.
  • This insulating body 11 may have various configurations. It serves for the thermal separation of the heating frame 25 and the mask frame 10.
  • the insulating body 11 is located between the heating frame 25 and the mask frame 10, so that a temperature gradient is formed inside the insulating body 11.
  • the thermal conductivity of the insulating body 11 is minimized, so that the heat flow from the heating frame 25 to the mask frame 10 is minimized.
  • the outer edge 8 'of the mask 8 may be located vertically above the mask frame 10. However, the edge 8 'may also extend only over the mask frame 10, so that the insulation body 11 surrounds not only the mask frame 10 but also the mask 8. However, it is also provided, and shown in phantom in FIG. 3, that the mask edge 8 'extends beyond the insulation body 11. It can also coincide with the outer edge of the insulating body 11.
  • the insulating body 11 can thus be completely covered by an edge portion of the mask 8.
  • gap gap 27 may be present.
  • the insulating body 11 is formed by a plurality of extending in vertical planes shielding plates 12.
  • the shield plates 12 are held by spacer elements 14 at a distance from each other.
  • the surfaces 12 ', 12 "of the shielding plates facing away from one another are preferably highly reflective and are in particular metal-coated and particularly preferably gold-coated, so that their emission coefficient is preferably less than 0.04.
  • the shielding plates 12 are formed by the mask frame 10 in the same material.
  • the mask frame 10 may consist of a solid metal body, are milled into the grooves, so that a comb-like cross section is formed.
  • the comb teeth are formed by the shield plates 12.
  • the mutually facing surfaces 12 ', 12 "of the shielding plates can be coated to a high gloss.
  • a connecting web which forms a shielding plate carrying section 16 lies at the bottom in the fourth exemplary embodiment shown in FIG.
  • the Ableplattentragabites 16 is above and can also be covered here by the mask 8.
  • the space between the shield plates 12 is filled with an insulating material having a low heat transfer coefficient.
  • the edge 8 'of the mask 8 extends to the outermost edge of the insulating body eleventh
  • the space between the shield plates 12 is also filled with an insulating 15.
  • the edge 8 'of the mask 8 does not extend beyond the insulating body 11 but ends vertically above the mask frame 10.
  • the shielding plates 12 described above are in a parallel position next to each other. At least 2, 3, 4 or 5 shielding plates 12 are provided, which are arranged parallel to one another, extending in vertical planes.
  • the shield plates 12 may be made of metal. They may have a minimum material thickness and be formed of high-gloss coated metal foils. But it is also possible to manufacture the shield plates 12 with larger material thicknesses, so that they have a sufficient dimensional stability. Furthermore, it is provided that the coated shielding plates 12 are formed by a poorly heat-conductive material, in particular a poorly heat-conducting metal. It can also be a foamed metal here.
  • the insulating layer 15 can likewise be made of metal, for example a metal foil. foam exist. But it is also envisaged that the insulating layer 15 made of a different material, such as a mineral material or plastic.
  • the temperature of the mask arrangement when used in the device described above and in a method for depositing OLEDs varies only within a narrow temperature range. It is provided in particular that the mask 8 extends only minimally laterally over its entire extent.
  • the means for thermal separation of the heating frame 25 and the mask frame 10 may be arranged and configured such that the coating process is carried out such that the outer edge region of the mask arrangement has a temperature which is above the condensation temperature of the steam.
  • a temperature gradient wherein the temperature at the outer, facing away from the mask frame 10 edge of the insulating body 11 is higher than the condensation temperature of the steam and that the temperature on the mask frame 10 facing edge of the Insulating body 11 is below the condensation temperature of the steam.
  • the mask change is particularly simplified in that neither the mask frame 10 nor the insulating body 11 are cooled with a coolant.
  • the mask frame 10 and / or the insulating body 11 is cooled with a temperature control agent.
  • a temperature control agent As the material for the mask 8 Invar is preferably used or another material in which the thermal expansion coefficient, in particular in a temperature range of 0 ° C to 120 ° C is minimal or at least partially disappears.
  • the material from which the mask frame is made may be either a bulk material, a layer system, a compound, a matrix fiber material, carbon fiber material or other type of material system.
  • the fiber-reinforced material may in particular have an anisotropic thermal expansion behavior.
  • the thermal expansion in a spatial direction may be less than 1 ppm.
  • the thermal expansion into another, for example in the vertical direction may be higher.
  • the insulating body 11 is integrated in the mask assembly 7. Furthermore, it can be provided that the insulating body 11 is covered by the mask 8.
  • the mask frame 10 can be made by the use of the insulating body 11 of a material that is not Invar. In particular, it can be manufactured from the abovementioned materials which have anisotropic thermal expansion behavior.
  • the insulating body 11 is, in particular, a frame-shaped body which forms an insulating means revolving around the mask frame 10.
  • the shield plates 12 form a heat shield assembly, which is fastened in particular to the mask frame 10.
  • the Hitzeschildan- order can also be attached to the heating frame 25.
  • a device which is characterized in that the mask frame 10 is surrounded by a heated by means of heating means 18 heating frame 25 and is thermally separated from the heating frame 25.
  • a device which is characterized in that thermal insulation means 11, 26 are provided between the mask frame 10 and the heating frame 25.
  • the insulating means comprise an insulating body 11, in particular a frame-shaped insulating body 11.
  • a device which is characterized in that the reflection surfaces 12 ', 12 "are highly reflective and / or the shield plates 12 have a low thermal conductivity.
  • a device which is characterized in that the shielding plates 12 are formed of the insulating body 11 of the same material and protrude like a comb from a Ableplattentragab- section in cross-section.
  • a device characterized in that the insulating body 11 has a multilayer structure, wherein the layers in a direction transverse to the extension plane of the substrate holder 21 and the Schullens 25 extend.
  • a device which is characterized in that the insulating body 11 is connected in the same material with the mask frame 10 and / or with the heating frame 25.
  • a device which is characterized in that the mask frame 10 rests on a cooling means by means of cooling support frame 23.
  • a device which is characterized by a gas inlet element 2 which can be heated by heating means and which is arranged vertically above the substrate holder 21 and extends substantially over the entire surface of the substrate holder 21, wherein provision is made in particular for the gas inlet element 2 to be provided a second heating frame 28 is arranged.
  • a device characterized in that the heating means are capable of heating the heating frame 25 surrounding the mask frame 10 to a temperature of at least 100 ° C, 150 ° C or 200 ° C and / or that the coolant in is able to cool the mask frame 10 to a maximum temperature of 0 ° C, 10 ° C, 20 ° C or 100 ° C.
  • thermo insulation means are fixed to the mask frame 10 and / or that the Edge 8 'of the mask 8 at least partially extends over the thermal insulation means.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un dispositif pour déposer sur au moins un substrat (20) des couches structurées latéralement en utilisant des masques, en particulier en injectant de la vapeur dans une chambre de dépôt (19) et en condensant la vapeur sur le substrat (20), présentant un support de substrat (21) pouvant être refroidi à l'aide de moyens de refroidissement (22) destiné à maintenir le substrat (20) et un masque (8) fixé sur un cadre de masque (10) à poser sur le substrat (20). L'invention concerne des mesures avec lesquelles des couches structurées peuvent être déposées sur le substrat de manière reproductible. Le cadre de masque (10) est entouré par un cadre chauffant (25) chauffé à l'aide de moyens chauffants (18). Des moyens thermiquement isolants sont prévus entre le cadre de masque (10) et le cadre chauffant (25). Cette invention concerne en outre un procédé permettant de déposer des couches en utilisant un dispositif de ce type.
PCT/EP2018/073588 2017-09-06 2018-09-03 Dispositif pour déposer une couche structurée sur un substrat en utilisant un masque WO2019048367A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020207007332A KR102699514B1 (ko) 2017-09-06 2018-09-03 마스크의 사용하에 기판상에 구조화된 층을 증착하기 위한 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017120529.2 2017-09-06
DE102017120529.2A DE102017120529A1 (de) 2017-09-06 2017-09-06 Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat unter Verwendung einer Maske

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WO2019048367A1 true WO2019048367A1 (fr) 2019-03-14

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KR (1) KR102699514B1 (fr)
DE (1) DE102017120529A1 (fr)
TW (1) TWI774835B (fr)
WO (1) WO2019048367A1 (fr)

Citations (12)

* Cited by examiner, † Cited by third party
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US20030087471A1 (en) * 2001-09-04 2003-05-08 Max Shtein Self-aligned hybrid deposition
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JP2004269968A (ja) * 2003-03-10 2004-09-30 Sony Corp 蒸着用マスク
US20050037136A1 (en) 2003-07-28 2005-02-17 Katsuya Yamamoto Mask for deposition, film formation method using the same and film formation equipment using the same
EP2190263A1 (fr) * 2007-09-10 2010-05-26 Ulvac, Inc. Procédé de production de couche mince organique
US20090258142A1 (en) * 2008-04-14 2009-10-15 Young Ung An Organic deposition apparatus and method of depositing organic substance using the same
US20130040054A1 (en) 2010-02-17 2013-02-14 Aixtron Se Coating device and method for operating a coating device having a shielding plate
WO2012053532A1 (fr) * 2010-10-20 2012-04-26 株式会社アルバック Appareil pour formation de film organique et procédé pour formation de film organique
WO2012175128A1 (fr) 2011-06-22 2012-12-27 Aixtron Se Système de dépôt en phase vapeur et tête d'alimentation
WO2014050501A1 (fr) * 2012-09-25 2014-04-03 キヤノントッキ株式会社 Dispositif de dépôt en phase vapeur et procédé de dépôt en phase vapeur
DE102013101586A1 (de) 2013-02-18 2014-08-21 Aixtron Se Mehrschichtige Schattenmaske
DE102014116991A1 (de) 2014-11-20 2016-05-25 Aixtron Se CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate
KR20160149346A (ko) * 2015-06-17 2016-12-28 주식회사 에스에프에이 마스크 프레임 조립체 및 이를 포함하는 박막 증착장치

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TWI774835B (zh) 2022-08-21
KR102699514B1 (ko) 2024-08-26

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