WO2019039914A3 - 반도체 소자 및 반도체 소자 패키지 - Google Patents

반도체 소자 및 반도체 소자 패키지 Download PDF

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Publication number
WO2019039914A3
WO2019039914A3 PCT/KR2018/009815 KR2018009815W WO2019039914A3 WO 2019039914 A3 WO2019039914 A3 WO 2019039914A3 KR 2018009815 W KR2018009815 W KR 2018009815W WO 2019039914 A3 WO2019039914 A3 WO 2019039914A3
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WO
WIPO (PCT)
Prior art keywords
electrode
semiconductor device
branch electrodes
sub
light
Prior art date
Application number
PCT/KR2018/009815
Other languages
English (en)
French (fr)
Other versions
WO2019039914A2 (ko
Inventor
이창형
송준오
이태성
임창만
정세연
최병연
황성민
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020170108220A external-priority patent/KR102392862B1/ko
Priority claimed from KR1020170108145A external-priority patent/KR102379833B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to US16/641,296 priority Critical patent/US11749778B2/en
Publication of WO2019039914A2 publication Critical patent/WO2019039914A2/ko
Publication of WO2019039914A3 publication Critical patent/WO2019039914A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

실시 예에 따른 반도체 소자는, 발광 구조물, 발광 구조물 위에 배치된 투광성 전극층, 투광성 전극층 위에 배치되며 복수의 제1 개구부와 복수의 제2 개구부를 포함하는 반사층을 포함할 수 있다. 실시 예에 따른 반도체 소자는, 발광 구조물의 제1 도전형 반도체층에 접촉된 제1 전극과, 복수의 제1 개구부를 통해 투광성 전극층에 접촉된 제2 전극을 포함할 수 있다. 제1 전극은 제1 서브 전극과 복수의 제1 가지 전극을 포함하고, 복수의 제1 가지 전극은 제1 서브 전극으로부터 제2 전극 방향으로 연장되어 배치되고, 제2 전극은 제2 서브 전극과 복수의 제2 가지 전극을 포함하고, 복수의 제2 가지 전극은 제2 서브 전극으로부터 제1 전극 방향으로 연장되어 배치되고, 복수의 제1 가지 전극과 복수의 제2 가지 전극은 반사층의 상면에 서로 엇갈리게 배치될 수 있다.
PCT/KR2018/009815 2017-08-25 2018-08-24 반도체 소자 및 반도체 소자 패키지 WO2019039914A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/641,296 US11749778B2 (en) 2017-08-25 2018-08-24 Semiconductor device and semiconductor device package having an electrode recess with a different inclination angle than an inclination angle of an electrode in the recess

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020170108220A KR102392862B1 (ko) 2017-08-25 2017-08-25 반도체 소자 및 반도체 소자 패키지
KR1020170108145A KR102379833B1 (ko) 2017-08-25 2017-08-25 반도체 소자 및 반도체 소자 패키지
KR10-2017-0108145 2017-08-25
KR10-2017-0108220 2017-08-25

Publications (2)

Publication Number Publication Date
WO2019039914A2 WO2019039914A2 (ko) 2019-02-28
WO2019039914A3 true WO2019039914A3 (ko) 2019-04-18

Family

ID=65439138

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/009815 WO2019039914A2 (ko) 2017-08-25 2018-08-24 반도체 소자 및 반도체 소자 패키지

Country Status (2)

Country Link
US (1) US11749778B2 (ko)
WO (1) WO2019039914A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019125447A1 (de) * 2019-09-20 2021-03-25 Infineon Technologies Ag Halbleitersubstrat mit einem Bondpat-Material auf Aluminiumbasis

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KR101368720B1 (ko) * 2013-01-10 2014-03-03 주식회사 세미콘라이트 반도체 발광소자
KR101561203B1 (ko) * 2014-03-31 2015-10-20 주식회사 세미콘라이트 반도체 발광소자
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KR20160143430A (ko) * 2015-06-05 2016-12-14 서울바이오시스 주식회사 발광 다이오드

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Patent Citations (5)

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KR20110031099A (ko) * 2009-09-18 2011-03-24 도요다 고세이 가부시키가이샤 발광 소자
KR101368720B1 (ko) * 2013-01-10 2014-03-03 주식회사 세미콘라이트 반도체 발광소자
KR101561203B1 (ko) * 2014-03-31 2015-10-20 주식회사 세미콘라이트 반도체 발광소자
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Also Published As

Publication number Publication date
US11749778B2 (en) 2023-09-05
US20200203566A1 (en) 2020-06-25
WO2019039914A2 (ko) 2019-02-28

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