WO2019033268A1 - 可调电磁混合耦合滤波器 - Google Patents

可调电磁混合耦合滤波器 Download PDF

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Publication number
WO2019033268A1
WO2019033268A1 PCT/CN2017/097513 CN2017097513W WO2019033268A1 WO 2019033268 A1 WO2019033268 A1 WO 2019033268A1 CN 2017097513 W CN2017097513 W CN 2017097513W WO 2019033268 A1 WO2019033268 A1 WO 2019033268A1
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Prior art keywords
coupling
resonant
capacitive
inductive
capacitive coupling
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PCT/CN2017/097513
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English (en)
French (fr)
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高浩洋
黄磊
徐晨阳
张小耸
杨岳
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罗森伯格技术（昆山）有限公司
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Priority to PCT/CN2017/097513 priority Critical patent/WO2019033268A1/zh
Publication of WO2019033268A1 publication Critical patent/WO2019033268A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters

Definitions

  • the invention relates to an electromagnetic hybrid coupling filter, in particular to a tunable electromagnetic hybrid coupling filter capable of correcting the position of a transmission zero.
  • Electromagnetic hybrid coupling technology refers to a method of increasing the out-of-band rejection of a filter by utilizing the simultaneous electrical coupling and magnetic coupling on the coupling path between adjacent resonant cavities to generate transmission zeros.
  • N-order filters can have up to N-1 sets of electromagnetic hybrid couplings, resulting in N-1 transmission zeros, far more than N-order filters designed using cross-coupling techniques or source-load coupling techniques.
  • the frequency of transmitting the zero point is related to the frequency of the adjacent resonator.
  • the filter passband is wide, it is difficult to concentrate the transmission zero point near the passband, that is, it cannot be realized at the near end of the passband. Out-of-band suppression.
  • a coaxial cavity filter is disclosed in the patent document of the International Patent Application No. PCT/EP2015/065916A1, which is incorporated between non-adjacent conductors by providing inductive cross-coupling between non-adjacent conductors.
  • a bypass connector that provides a direct ohmic connection
  • one or more transfer nodes are provided.
  • the above patented technology still has the following defects: 1. Large volume; 2. Both capacitive coupling and resonant frequency are related to the height of the resonant column, and it is difficult to be tuned separately; 3. Some parts are relatively sensitive, and the processing precision is high.
  • Another patent application number CN200810027449.1 discloses a controllable electromagnetic hybrid coupling coaxial cavity filter.
  • the elliptical function filtering characteristic is realized by a coaxial cavity filter having only a main coupling path, but it has the following defects: 1.
  • the resonant column needs capacitor loading to reduce the frequency and the volume is large; 2.
  • the dielectric substrate deteriorates the intermodulation index of the system; 3.
  • the coupling component is installed at the top of the resonant column, which is difficult to adjust.
  • a tunable electromagnetic hybrid coupling filter comprising a cavity, at least three resonant columns, at least one capacitive coupling structure, at least one inductive coupling structure and a compensation structure, the resonance
  • the column is fixed in the cavity and the resonant frequency generated by the column is adjustable;
  • a capacitive coupling structure and an inductive coupling structure are arranged between the adjacent two resonant columns, and the capacitive coupling amount of the capacitive coupling structure and the inductive coupling structure are inductive.
  • the coupling amount is adjustable in size; the two coupling structures exist simultaneously, and together constitute an electromagnetic hybrid coupling structure, the compensation structure connecting two non-adjacent resonant columns, which generate a capacity between two adjacent resonant columns Sexual and / or inductive coupling.
  • the cavity is a closed metal cavity comprising a top cavity wall and a bottom cavity wall, the resonant column being vertically fixed to the bottom cavity wall of the cavity, and the resonant column There is a gap between the tip and the wall of the top cavity of the cavity.
  • a plurality of frequency tuning screws are fixed on the wall of the top cavity of the cavity, and each of the frequency tuning screws corresponds to one resonant column, and each of the resonant columns adjusts its resonant frequency by a corresponding frequency tuning.
  • the capacitive coupling structure comprises a first capacitive coupling and a capacitive coupling modulating screw, the first capacitive coupling connecting two adjacent resonant columns and being insulated from the resonant column;
  • the sexually coupled snail is fixed to the top cavity wall of the cavity and opposite the first capacitive coupling.
  • a first insulating member is disposed between the first capacitive coupling member and the resonant column, and the first capacitive coupling member is insulated from the resonant column by the first insulating member.
  • the first capacitive coupling member is adjacent to the top end of the resonant column, and two adjacent first capacitive coupling members are disposed above and below the misalignment, or are misaligned before and after.
  • the inductive coupling structure comprises an inductive coupling conductor and an inductive coupling tuning screw,
  • the inductive coupling conductor is located at the bottom between the adjacent two resonant columns, and the inductive coupling tuning is disposed on the inductive coupling conductor.
  • the compensation structure comprises an inductive compensation structure and/or a capacitive compensation structure, two ends of the inductive compensation structure are connected to two adjacent resonance columns, and the capacitive compensation structure is not adjacent to two The resonant columns are insulated and connected.
  • the capacitive compensation structure comprises a second capacitive coupling member and a second insulating member, and the second capacitive coupling member is at least one end insulated from the resonant column by the second insulating member.
  • the first capacitive coupling is clamped between the gaps of two adjacent resonant columns.
  • the number of resonant columns spanned by the inductive compensation structure and the capacitive compensation structure is greater than two, and the number of resonant columns spanned by the two is equal or unequal.
  • the first and second capacitive coupling members may adopt a metal sheet or a metal plate or a metal block structure.
  • the first and second insulating members may be insulated spacers or insulating films.
  • the invention adds an inductive compensation structure and/or a capacitive compensation structure, and the added compensation structure can adjust the position of the zero point of the near end of the pass band to be closer to the pass band in a larger range, thereby improving the near-end out-of-band suppression. At the same time improve the in-band echo and insertion loss indicators.
  • the invention also has the advantages that the transmission zero point can be adjusted independently of the resonance frequency, the design flexibility is improved, the volume is decreased, the processing cost is reduced, the adjustment margin is increased, and the mutual adjustment is not affected.
  • Figure 1 is a cross-sectional structural view of a filter of the present invention
  • FIG. 2 is a schematic perspective view of a filter of the present invention
  • Figure 3 is a graphical representation of the frequency response of the present invention.
  • the adjustable electromagnetic hybrid coupling filter disclosed by the invention improves the performance of the out-of-band near-end suppression, in-band echo and insertion loss index of the electromagnetic hybrid coupling filter by adding a compensation structure.
  • a tunable electromagnetic hybrid coupling filter disclosed in the present invention includes a cavity 1 , a resonant column 2 , a frequency tuning screw 3 , a capacitive coupling structure, an inductive coupling structure and a compensation structure.
  • the cavity 1 in the embodiment is a closed metal cavity as a whole, which comprises a top cavity wall 11 and a bottom cavity wall 12, the entire structure of which is placed in the cavity 1.
  • the resonant column 2 is fixed in the cavity 1.
  • the plurality of resonant columns 2 are vertically spaced and fixed on the bottom cavity wall 12 of the cavity, and the top end of each resonant column 2 and the top cavity of the cavity A certain gap is left between the walls 11 to provide a space for the frequency adjustment screw 3 and/or other components.
  • a plurality of electromagnetic hybrid coupling structures 4 are formed between two adjacent resonant columns 2.
  • at least three resonant columns 2 are disposed, that is, at least two sets of electromagnetic hybrid coupling structures 4 are formed.
  • the resonant column 2 generates resonance at a specified frequency, and the level of the resonant frequency is related to the length of the resonant column 2, and the longer the resonant column 2 is, the lower the resonant frequency is.
  • the frequency tuning screw 3 is used to adjust the resonant frequency of the resonant column 2 within a certain range.
  • one end of the frequency adjusting screw 3 is vertically fixed to the top cavity wall 11 of the cavity, and the other end is opposite to the top end of the resonant column 2.
  • the capacitive coupling structure and the inductive coupling structure are simultaneously disposed between the adjacent two resonant columns 2, and the two together generate electromagnetic hybrid coupling.
  • the electric field at the upper end portion of the resonant column 2 is more likely to generate capacitive coupling, and the magnetic field at the lower end portion of the resonant column 2 is stronger and susceptible to inductive coupling.
  • the capacitive coupling structure includes a first capacitive coupling member 51 and a capacitive coupling tuning screw 52.
  • the first capacitive coupling member 51 is connected to the phase. Two adjacent resonant columns 2 are adjacent to each other.
  • the first capacitive coupling member 51 is disposed near the top end of the resonant column 2, and the adjacent two first capacitive coupling members 51 are disposed above and below the misalignment. Post-dislocation distribution.
  • the first capacitive coupling member 51 can be realized by a metal piece, and the two ends of the metal piece are respectively fixed on the sides of the adjacent two resonant columns 2, and the first capacitive coupling member 51 and the resonant column 2 are An insulating spacer is disposed between the sides; as an alternative, the first capacitive coupling member 51 can also be realized by a metal plate or a metal block structure, in which case the metal plate or the metal block is clamped to the adjacent two resonant columns 2 Between or at both ends is embedded in the resonant column 2, at which time the metal plate or the metal block is covered with an insulating layer.
  • the first coupling member 51 may also have one end connected to the resonant column 2 and the other end insulated from the
  • a first insulating member (not shown) is disposed between the first capacitive coupling member 51 and the resonant column 2, and the first insulating member is insulated from the resonant column 2 to prevent DC short circuit between the two.
  • the first insulating member may be an insulating spacer or an insulating film.
  • the capacitive coupling amount of the capacitive coupling structure is related to the position and shape of the first capacitive coupling member 51 (such as a metal piece). The closer the first capacitive coupling member 51 is to the top end of the resonant column 2, the stronger the first capacitive coupling member 51 is. The larger the area covered by the coupling member 51 on the resonant column, the stronger the coupling.
  • the capacitive coupling modulating screw 52 is used to adjust the capacitive coupling size of the first capacitive coupling member 51 within a certain range.
  • the capacitive coupling modulating screw 52 is fixed on the top cavity wall 11 of the cavity and opposite to the first capacitive coupling member 51.
  • the first capacitive coupling member 51 connects the adjacent two resonant columns 2
  • the frequency tuning screw 3 is opposite to the resonant column 2. Therefore, in the embodiment, a capacitive coupling adjusting screw 52 is disposed between the adjacent two frequency adjusting screws 3.
  • the longer the length of the capacitive coupling tuning screw 52 the smaller the coupling amount.
  • the shorter the length of the capacitive coupling tuning screw 52 the larger the coupling amount.
  • the inductive coupling structure includes an inductive coupling conductor 61 and an inductive coupling tuning screw 62.
  • the inductive coupling conductor 61 is located at the bottom between the adjacent two resonant columns 2. The higher the height of the inductive coupling conductor 61, the greater the coupling amount of the inductive coupling structure.
  • the inductive coupling modulating screw 62 is located on the inductive coupling conductor 61. Each inductive coupling modulating screw 62 corresponds to one inductive coupling conductor 61.
  • the inductive coupling modulating screw 62 on the inductive coupling conductor 61 can adjust the inductive coupling amount within a certain range. . Inductive coupling The longer the length of the snail 62 is, the larger the coupling amount is. On the contrary, the shorter the length of the inductive coupling snail 62 is, the smaller the coupling amount is.
  • a transmission zero is generated near the resonant frequency.
  • the position of the transmission zero is related to the magnitude of the capacitive and inductive coupling, and the two coupling quantities are adjusted separately.
  • the size can control the position of the transmission zero within a certain range.
  • the present invention corrects the position of the transmission zero point by the compensation structure.
  • the compensation structure connects two non-adjacent resonant columns 2, that is, at least three resonant columns 2, for example, when three resonant columns 2 are bridged, that is, one end of the compensation structure is connected to the first resonant column, and the other end is connected to The third resonant column.
  • the compensation structure creates a capacitive and/or inductive coupling between two adjacent resonant columns 2, by which a capacitive or inductive coupling can be produced between two adjacent resonant columns 2 to achieve different properties. Compensation.
  • the compensation structure includes an inductive compensation structure 7 and/or a capacitive compensation structure, that is, the two compensation structures can be used separately or simultaneously, wherein both ends of the inductive compensation structure 7 are directly connected to the resonance column 2, and the resonance column 2 is away from the resonance column 2
  • the capacitive compensation structure includes a second capacitive coupling member 8 and a second insulating member 81. At least one end of the second capacitive coupling member 8 is provided with a second insulating member 81 between the resonant column 2 for insulation connection. A second insulating member 81 is disposed at both ends, and the second capacitive coupling member 8 is a metal rod.
  • the second capacitive coupling member 8 and the resonant column 2 are separated by a second insulating member 81, and the second insulating member 81 is used to achieve an insulating connection with the resonant column 2 to prevent DC short circuit between the two.
  • the second insulating member 81 may be an insulating spacer or an insulating film.
  • the magnitude of the capacitive compensation amount of the capacitive compensation structure is related to the area of the second capacitive coupling member 8 covering the resonant column 2. The larger the area of the second capacitive coupling member 8 covering the resonant column 2, the more capacitive compensation Strong.
  • the compensation structure in the present invention is not limited to the one described herein.
  • the inductive or capacitive compensation of other structures is equally applicable to the present invention as long as it provides a capacitive compensation amount and/or an inductive compensation amount.
  • the number of the resonant columns 2 spanned by the inductive compensation structure 7 and the capacitive compensation structure is greater than two, and the number of the resonant columns 2 spanned by the two may be equal or unequal, such as the inductive compensation structure 7 and the capacitive compensation structure may both span Connected to the four resonant columns 2, the inductive compensation structure 7 can also be connected across four resonant columns 2, the capacitive compensation structure spans five resonant columns 2, and so on.
  • the frequency response of the filter is curve A in FIG. 3, and the frequency response curve after using the compensation structure is B and C, wherein the degree of compensation of the C curve is greater than the B curve.
  • the transmission zero frequency of the near end of the passband increases, closer to the passband, and the greater the degree of compensation, the greater the increase of the transmission zero frequency, and at the same time the insertion loss near the passband edge.
  • the echo indicator has also improved. Therefore, the added compensation structure of the present invention is capable of adjusting the position of the zero point of the near end of the pass band in a wide range, thereby improving the near-end band rejection while improving the in-band echo and insertion loss indicators.

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Abstract

本发明揭示了一种可调电磁混合耦合滤波器，包括腔体和谐振柱，谐振柱固定于腔体内且其产生的谐振频率可调；相邻的两根谐振柱之间设置有容性耦合结构和感性耦合结构，且容性耦合结构的容性耦合量及感性耦合结构的感性耦合量大小可调；两种耦合结构同时存在，共同构成电磁混合耦合结构，补偿结构连接两个不相邻的谐振柱，其在不相邻的两个谐振柱之间产生容性和/或感性耦合。本发明能够在较大范围内调节通带近端传输零点的位置，使其更靠近通带，从而提高近端带外抑制，同时改善带内回波和插损指标。

Description

可调电磁混合耦合滤波器 技术领域
本发明涉及一种电磁混合耦合滤波器，尤其是涉及一种可修正传输零点位置的可调电磁混合耦合滤波器。
背景技术
电磁混合耦合技术是指利用相邻谐振腔之间耦合路径上同时存在的电耦合和磁耦合产生传输零点从而提高滤波器带外抑制的方法。理论上，N阶滤波器最多可具有N-1组电磁混合耦合，产生N-1个传输零点，远多于采用交叉耦合技术或源-负载耦合技术设计的N阶滤波器。
现有的电磁混合结构其传输零点的频率均与其相邻的谐振器频率相关，当滤波器通带较宽时，难以将传输零点集中于通带附近，即无法在通带近端实现较高的带外抑制。
另有国际申请号为PCT/EP2015/065916A1的专利文献中公开了一种同轴腔滤波器，其通过在非相邻导体之间设置电感交叉耦合，实现在不需要在非相邻导体之间提供直接欧姆连接的旁路连接器情况下，提供一个或多个传输节点。但是上述专利技术仍然存在下述缺陷：1、体积大；2、容性耦合与谐振频率都与谐振柱高度相关，难以单独调谐；3、部分尺寸比较敏感，对加工精度要求较高。
另有专利申请号为CN200810027449.1中公开了一种可控电磁混合耦合同轴腔滤波器，用只具有主耦合路径的同轴腔滤波器实现了椭圆函数滤波特性，但是它具有以下缺陷：1、谐振柱需要电容加载降低频率，体积较大；2、采用介质基片恶化了系统的互调指标；3、耦合组件安装在谐振柱顶端，不易调节。
因此，需要研究一种新型的电磁混合耦合滤波器，来解决上述背景技术中所涉及的技术缺陷。
发明内容
本发明的目的在于克服现有技术的缺陷，提供一种可调电磁混合耦合滤波器，通过增加耦合补偿结构，以改善电磁混合耦合滤波器性能。
为实现上述目的，本发明提出如下技术方案：一种可调电磁混合耦合滤波器，包括腔体、至少三根谐振柱、至少一容性耦合结构、至少一感性耦合结构和补偿结构，所述谐振柱固定于腔体内且其产生的谐振频率可调；相邻的两根谐振柱之间设置有容性耦合结构和感性耦合结构，且容性耦合结构的容性耦合量及感性耦合结构的感性耦合量大小可调；两种耦合结构同时存在，共同构成电磁混合耦合结构，所述补偿结构连接两个不相邻的所述谐振柱，其在不相邻的两个谐振柱之间产生容性和/或感性耦合。
优选地，所述腔体为一封闭的金属腔体，其包括顶部腔体壁和底部腔体壁，所述谐振柱竖直固定于腔体的所述底部腔体壁上，且谐振柱的顶端与腔体的顶部腔体壁之间留有间隙。
优选地，所述腔体的顶部腔体壁上固定有多个频率调螺，每个所述频率调螺对应一个谐振柱，每根所述谐振柱通过对应的频率调螺调整其谐振频率。
优选地，所述容性耦合结构包括第一容性耦合件和容性耦合调螺，所述第一容性耦合件连接相邻的两根谐振柱，且与谐振柱绝缘连接；所述容性耦合调螺固定于腔体的顶部腔体壁上且与第一容性耦合件相对。
优选地，所述第一容性耦合件与谐振柱之间设置有第一绝缘件，所述第一容性耦合件通过所述第一绝缘件与谐振柱之间绝缘连接。
优选地，所述第一容性耦合件靠近谐振柱的顶端，且相邻两个所述第一容性耦合件上、下错位分布，或前、后错位分布。
优选地，所述感性耦合结构包括感性耦合导体和感性耦合调螺，所述 感性耦合导体位于相邻两根谐振柱之间的底部，所述感性耦合调螺设置于所述感性耦合导体上。
优选地，所述补偿结构包括感性补偿结构和/或容性补偿结构，所述感性补偿结构的两端与不相邻的两个谐振柱相连，所述容性补偿结构与不相邻的两个谐振柱绝缘相连。
优选地，所述容性补偿结构包括第二容性耦合件及第二绝缘件，所述第二容性耦合件至少一端通过第二绝缘件与谐振柱绝缘连接。
优选地，所述第一容性耦合件夹持于相邻两谐振柱的空隙之间。
优选地，所述感性补偿结构和容性补偿结构跨接的谐振柱的数量大于二，且两者跨接的谐振柱的数量相等或不等。
优选地，所述第一、第二容性耦合件可采用金属片或金属板或金属块结构。
优选地，所述第一、第二绝缘件可采用绝缘垫片或绝缘薄膜。
本发明增加了感性补偿结构和/或容性补偿结构，增加的补偿结构能够在较大范围内调节通带近端传输零点的位置，使其更靠近通带，从而提高近端带外抑制，同时改善带内回波和插损指标。另外，本发明还具有传输零点可独立于谐振频率进行调节，设计灵活性提高，体积下降，加工成本降低，调节余量增加，不影响互调等优点。
附图说明
图1是本发明滤波器的剖视结构示意图；
图2是本发明滤波器的立体结构示意图；
图3是本发明频率响应的曲线示意图。
附图标记：
1、腔体，11、顶部腔体壁，12、底部腔体壁，2、谐振柱，3、频率调螺，4、谐振腔，51、第一容性耦合件，52、容性耦合调螺，61、感性耦合 导体，62、感性耦合调螺，7、感性补偿结构，8、第二容性耦合件，81、第二绝缘件。
具体实施方式
下面将结合本发明的附图，对本发明实施例的技术方案进行清楚、完整的描述。
本发明所揭示的一种可调电磁混合耦合滤波器，通过增加补偿结构，以改善电磁混合耦合滤波器的带外近端抑制、带内回波和插损指标等性能。
如图1所示，本发明所揭示的一种可调电磁混合耦合滤波器，包括腔体1、谐振柱2、频率调螺3、容性耦合结构、感性耦合结构和补偿结构，其中，本实施例中的腔体1整体为一封闭的金属腔体，其包括顶部腔体壁11和底部腔体壁12，本方案的整体结构均置于该腔体1中。
谐振柱2固定于腔体1内，本实施例中，多根谐振柱2均竖直间隔固定于腔体的底部腔体壁12上，每根谐振柱2的顶端与腔体的顶部腔体壁11之间留有一定的间隙，提供频率调螺3和/或其他部件的安装空间。相邻两根谐振柱2之间形成一组电磁混合耦合结构4，本实施例中谐振柱2至少设置三根，即至少形成两组电磁混合耦合结构4。谐振柱2在指定的频率处产生谐振，且谐振频率的高低与谐振柱2的长度相关，谐振柱2越长谐振频率越低。
频率调螺3用于在一定范围内调整谐振柱2的谐振频率。本实施例中，频率调螺3的一端竖直固定于腔体的顶部腔体壁11上，另一端与谐振柱2的顶端相对。频率调螺3越长谐振频率越低，反之，频率调螺3越短谐振频率越高。
容性耦合结构和感性耦合结构同时设置于相邻两根谐振柱2之间，两者共同产生电磁混合耦合。所述谐振柱2的上端部分电场较强易产生容性耦合，谐振柱2的下端部分磁场较强易产生感性耦合。其中，容性耦合结构包括第一容性耦合件51和容性耦合调螺52，第一容性耦合件51连接相 邻的两根谐振柱2，本实施例中，第一容性耦合件51靠近谐振柱2的顶端设置，且相邻两个第一容性耦合件51上、下错位分布，也可前、后错位分布。具体实施时，第一容性耦合件51可采用金属片实现，金属片的两端分别固定于相邻两根谐振柱2的侧面上，此时第一容性耦合件51与谐振柱2的侧面之间设有绝缘垫片；作为可替换的，第一容性耦合件51也可采用金属板或金属块结构实现，此时金属板或金属块被夹持于相邻两根谐振柱2之间，或两端嵌入到谐振柱2内，此时金属板或金属块外包覆有一层绝缘层。第一耦合件51也可以是一端与谐振柱2导通相连，另一端与谐振柱2绝缘相连。
优选地，第一容性耦合件51与谐振柱2之间设置有第一绝缘件(图未示)，通过该第一绝缘件实现与谐振柱2之间绝缘连接，可防止两者直流短路。实施时，第一绝缘件可采用绝缘垫片或绝缘薄膜。容性耦合结构的容性耦合量的大小与第一容性耦合件51(如金属片)的位置及形状有关，第一容性耦合件51越靠近谐振柱2顶端耦合越强，第一容性耦合件51覆盖在谐振柱上的面积越大耦合越强。
容性耦合调螺52用于在一定范围内调整第一容性耦合件51的容性耦合大小。本实施例中，容性耦合调螺52固定于腔体的顶部腔体壁11上且与第一容性耦合件51相对，因第一容性耦合件51连接相邻的两根谐振柱2，且频率调螺3与谐振柱2相对，所以，本实施例中，相邻两个频率调螺3之间设置一容性耦合调螺52。与频率调螺3原理相同，容性耦合调螺52长度越长耦合量越小，反之，容性耦合调螺52长度越短耦合量越大。
感性耦合结构包括感性耦合导体61和感性耦合调螺62，感性耦合导体61位于相邻两根谐振柱2之间的底部，感性耦合导体61高度越高感性耦合结构的耦合量越大。感性耦合调螺62位于感性耦合导体61上，每个感性耦合调螺62对应一个感性耦合导体61，通过调整感性耦合导体61上面的感性耦合调螺62可以在一定范围内调整感性耦合量的大小。感性耦合 调螺62长度越长耦合量越大，反之，感性耦合调螺62长度越短耦合量越小。
相邻的谐振柱2之间同时存在感性和容性耦合时，会在其谐振频率附近产生一个传输零点，传输零点的位置与容性和感性耦合量的大小相关，通过分别调整两种耦合量的大小可以在一定范围内控制传输零点的位置。
但是，当传输零点超出调谐范围时，本发明通过补偿结构对传输零点的位置进行修正。补偿结构连接两个不相邻的谐振柱2，即至少跨接三跟谐振柱2，例如跨接三根谐振柱2时，也就是补偿结构一端接在第一根谐振柱上，另一端接在第三根谐振柱上。补偿结构在不相邻的两个谐振柱2之间产生容性和/或感性耦合，通过该补偿结构可以在不相邻的两个谐振柱2之间产生容性或感性耦合，实现不同性质的补偿。
具体地，补偿结构包括感性补偿结构7和/或容性补偿结构，即两种补偿结构可单独或同时使用，其中，感性补偿结构7的两端与谐振柱2直接相连，其距谐振柱2顶部的距离越大感性补偿量越小，即可通过改变感性补偿结构7距谐振柱2顶部的距离，来改变其感性补偿量。容性补偿结构包括第二容性耦合件8及第二绝缘件81，所述第二容性耦合件8的至少一端与谐振柱2之间设有第二绝缘件81实现绝缘相连，也可两端均设置第二绝缘件81，所述第二容性耦合件8为金属杆。
优选地，第二容性耦合件8与谐振柱2之间通过第二绝缘件81隔开，通过该第二绝缘件81实现与谐振柱2之间绝缘连接，可防止两者直流短路。实施时，第二绝缘件81可采用绝缘垫片或绝缘薄膜。容性补偿结构的容性补偿量的大小与第二容性耦合件8覆盖在谐振柱2上的面积有关，第二容性耦合件8覆盖在谐振柱2上的面积越大容性补偿越强。当然，本发明中的补偿结构并不限于这里所描述的，其他结构的感性或容性补偿方式，只要能提供容性补偿量和/或感性补偿量的结构同样适用于本发明。
另外，感性补偿结构7和容性补偿结构跨接的谐振柱2数量大于二，且两者跨接的谐振柱2数量可以相等或不等，如感性补偿结构7和容性补偿结构可以都跨接四根谐振柱2，也可以感性补偿结构7跨接四根谐振柱2，容性补偿结构跨接五根谐振柱2，等等。
以图2中所示结构为例，当不采用补偿结构时滤波器的频率响应为图3中曲线A，采用补偿结构后的频率响应曲线为B和C，其中C曲线的补偿程度大于B曲线。由图3可看出，增加补偿结构后通带近端的传输零点频率升高，更靠近通带，并且补偿程度越大传输零点频率增幅越大，与此同时通带边沿附近的插损和回波指标也随之得到改善。因此，本发明增加的补偿结构能够在较大范围内调节通带近端传输零点的位置，从而提高近端带外抑制，同时改善带内回波和插损指标。
本发明的技术内容及技术特征已揭示如上，然而熟悉本领域的技术人员仍可能基于本发明的教示及揭示而作种种不背离本发明精神的替换及修饰，因此，本发明保护范围应不限于实施例所揭示的内容，而应包括各种不背离本发明的替换及修饰，并为本专利申请权利要求所涵盖。

Claims (10)

  1. 一种可调电磁混合耦合滤波器，其包括腔体、至少三根谐振柱、至少一容性耦合结构、至少一感性耦合结构，所述谐振柱固定于腔体内且其产生的谐振频率可调；相邻的两根谐振柱之间设置有容性耦合结构和感性耦合结构，且容性耦合结构的容性耦合量及感性耦合结构的感性耦合量大小可调；两种耦合结构同时存在，共同构成电磁混合耦合结构；其特征在于：所述可调滤波器还包括补偿结构，所述补偿结构连接两个不相邻的所述谐振柱，其在不相邻的两个谐振柱之间产生容性和/或感性耦合。
  2. 根据权利要求1所述的可调电磁混合耦合滤波器，其特征在于，所述腔体为一封闭的金属腔体，其包括顶部腔体壁和底部腔体壁，所述谐振柱竖直固定于腔体的所述底部腔体壁上，且谐振柱的顶端与腔体的顶部腔体壁之间留有间隙。
  3. 根据权利要求2所述的可调电磁混合耦合滤波器，其特征在于，所述腔体的顶部腔体壁上固定有多个频率调螺，每个所述频率调螺对应一个谐振柱，每根所述谐振柱通过对应的频率调螺调整其谐振频率。
  4. 根据权利要求2所述的可调电磁混合耦合滤波器，其特征在于，所述容性耦合结构包括第一容性耦合件和容性耦合调螺，所述第一容性耦合件连接相邻的两根谐振柱，且与谐振柱绝缘连接；所述容性耦合调螺固定于腔体的顶部腔体壁上且与第一容性耦合件相对。
  5. 根据权利要求4所述的可调电磁混合耦合滤波器，其特征在于，所述第一容性耦合件与谐振柱之间设置有第一绝缘件，所述第一容性耦合件通过所述第一绝缘件与谐振柱之间绝缘连接。
  6. 根据权利要求4所述的可调电磁混合耦合滤波器，其特征在于，所述第一容性耦合件靠近谐振柱的顶端，且相邻两个所述第一容性耦合件上、下错位分布，或前、后错位分布。
  7. 根据权利要求1所述的可调混合耦合滤波器，其特征在于，所述感性耦合结构包括感性耦合导体和感性耦合调螺，所述感性耦合导体位于相邻两根谐振柱之间的底部，所述感性耦合调螺设置于所述感性耦合导体上。
  8. 根据权利要求1所述的可调电磁混合耦合滤波器，其特征在于，所述补偿结构包括感性补偿结构和/或容性补偿结构，所述感性补偿结构的两端与不相邻的两个谐振柱相连，所述容性补偿结构与不相邻的两个谐振柱绝缘相连。
  9. 根据权利要求8所述的可调电磁混合耦合滤波器，其特征在于，所述容性补偿结构包括第二容性耦合件及第二绝缘件，所述第二容性耦合件至少一端通过第二绝缘件与谐振柱绝缘连接。
  10. 根据权利要求4所述的可调电磁混合耦合滤波器，其特征在于，所述第一容性耦合件夹持于相邻两谐振柱的空隙之间。
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