WO2019024847A1 - 一种半导体的测试方法和测试装置 - Google Patents

一种半导体的测试方法和测试装置 Download PDF

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Publication number
WO2019024847A1
WO2019024847A1 PCT/CN2018/097808 CN2018097808W WO2019024847A1 WO 2019024847 A1 WO2019024847 A1 WO 2019024847A1 CN 2018097808 W CN2018097808 W CN 2018097808W WO 2019024847 A1 WO2019024847 A1 WO 2019024847A1
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Prior art keywords
microwave
test sample
test
photoconductive effect
pulsed laser
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English (en)
French (fr)
Inventor
卓恩宗
樊堃
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HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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Priority to US16/633,586 priority Critical patent/US20200209168A1/en
Publication of WO2019024847A1 publication Critical patent/WO2019024847A1/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095—Semiconductive materials

Definitions

  • Embodiments of the present application relate to the field of display technologies, and in particular, to a semiconductor testing method and testing device.
  • Carrier lifetime refers to the lifetime of unbalanced carriers.
  • Non-equilibrium carriers are generally non-equilibrium minority carriers (because only a few carriers can be injected into the semiconductor and accumulate, and most carriers disappear quickly after Coulomb even if injected. Therefore, the unbalanced carrier lifetime also refers to the unbalanced minority carrier lifetime, that is, the minority carrier lifetime. For example, for an n-type semiconductor, the unbalanced carrier lifetime also refers to the lifetime of the non-equilibrium cavity.
  • minority carrier lifetime is an important parameter that directly affects device performance.
  • a related parameter that is often used is the minority carrier diffusion length L (equal to the square root of the product of the diffusion coefficient and the lifetime), and L is the average distance that the minority carrier can diffuse while the composite is able to pass. The longer the minority carrier lifetime, the greater the diffusion length.
  • BJT bipolar junction crystals
  • the technical problem to be solved first by the embodiments of the present application is to provide a test method for a semiconductor material capable of detecting the unbalanced carrier recombination lifetime of a semiconductor.
  • a further technical problem to be solved by embodiments of the present application is to provide a test apparatus using a test method for detecting a semiconductor material whose unbalanced carrier recombination lifetime of a semiconductor is used.
  • the embodiment of the present application first provides a test method for a semiconductor material, including the steps:
  • the composite lifetime of the unbalanced carriers of the test sample is obtained by analyzing the photoconductive effect and the weakening information.
  • the method further comprises:
  • the initial conductivity ⁇ 0 of the test sample is detected, and the corresponding initial microwave signal V0.
  • the semiconductor test sample since the semiconductor test sample has an initial conductivity and an initial microwave signal V0, the present scheme tests the same, which is advantageous for improving the test accuracy of the present application.
  • the step of exciting the test sample by pulsed laser to generate a photoconductive effect comprises:
  • ⁇ is the amount of change in photoconductivity
  • ⁇ V is the amount of change in the microwave signal.
  • the detection is performed. The amount of change can be obtained, which is advantageous for later calculations and can improve the test accuracy.
  • ⁇ q( ⁇ n ⁇ e+ ⁇ p ⁇ p), where ⁇ is the amount of change in photoconductivity, q is the electron charge, ⁇ n is the electron concentration generated by laser excitation, ⁇ p is the hole concentration, ⁇ e is the electron mobility, and ⁇ p is empty. Acupoint mobility.
  • the step of detecting the weakening information of the photoconductive effect includes:
  • the weakening information of the photoconductive effect is detected by microwave reflection
  • the weak signal includes: an exponential decay curve of the microwave signal V, and the formula is:
  • V V0*e -t/ ⁇ ; where V0 refers to the initial microwave signal, t refers to the pulse laser turn-off time, and ⁇ refers to the average lifetime of unbalanced carriers before recombination, called unbalanced load
  • V0 refers to the initial microwave signal
  • t refers to the pulse laser turn-off time
  • ⁇ refers to the average lifetime of unbalanced carriers before recombination, called unbalanced load
  • the composite lifetime of the flow In this embodiment, the weakening process of the conductance effect and the unbalanced carriers will gradually disappear and disappear by the microwave mode, and the semiconductor can be obtained by analyzing the photoconductive effect and the variation curve of the microwave signal V. Test the composite life of the sample.
  • the pulsed laser has a wavelength of 249 nm to 449 nm.
  • the pulsed laser has a wavelength of 349 nm.
  • the microwave reflection mode is implemented by a controllable microwave source, and the controllable microwave source uses a microwave wavelength of 24-26 GHz.
  • the embodiment of the present application further provides a testing apparatus for testing a semiconductor material according to any of the above, comprising:
  • a pulsed laser emitter for exciting a test sample to produce a photoconductive effect
  • a microwave generator for detecting weak information of the photoconductive effect
  • a microwave receiver configured to receive the weak information
  • a calculation unit for obtaining a composite lifetime of unbalanced carriers of the test sample by analyzing the photoconductive effect and the weakening information may actually be included. Structures such as sensitive detectors, circutators, and waveguides, but the structure of other parts is not the main application content of the present application, and therefore will not be described again; in addition, it may also include exponential attenuation for calculating the microwave signal V.
  • the calculation unit of the curve may also include exponential attenuation for calculating the microwave signal V.
  • the microwave generator uses a controllable microwave source having a wavelength of 24-26 GHz;
  • the pulsed laser used in the pulsed laser emitter has a wavelength of 349 nm.
  • the embodiment of the present application further provides a testing device, including:
  • a pulsed laser emitter for emitting a first laser beam to excite a test sample to produce a photoconductive effect
  • a splitter for splitting the microwave from the microwave generator into a first microwave and a second microwave, and outputting the first microwave and the second microwave;
  • a circulator for emitting the second microwave from the shunt toward the test sample and outputting the second microwave reflected by the test sample
  • a detector for detecting and aligning the first microwave from the shunt and the second microwave from the circulator reflected by the test sample to generate debilitating information.
  • the first microwave is incident on the test sample through the shunt and the circulator before the first laser beam is incident on the test sample, and is incident on the first laser beam at the first laser beam
  • the second microwave is incident on the test sample through the flow divider and the circulator after the test sample.
  • the microwave generator is configured to emit the microwave after the first laser beam is incident on the test sample, and divide the microwave into the same first microwave and the microwave through the shunt a second microwave, the first microwave is directly output to the detector through the shunt without being incident on the test sample, and the second microwave is sequentially incident to the device through the shunt and the circulator Test samples are described.
  • the testing device further includes a calculating unit configured to obtain a composite lifetime of the unbalanced carriers of the test sample by analyzing the photoconductive effect and the weakening information.
  • test sample includes an insulating substrate and a conductive film disposed on the insulating substrate, and the photoconductive effect occurs in the conductive film.
  • the testing device further includes a feedback adjustment module for storing predetermined degraded information, and the feedback adjustment module compares the predetermined degraded information with the degraded information from the detector, and according to the comparison result Adjusting the pulsed laser emitter produces a second laser beam that is different from the first laser beam.
  • the detector includes a phase detector for detecting a phase offset between the first microwave and the second microwave.
  • the detector includes an amplitude detector for detecting a difference in amplitude between the first microwave and the second microwave.
  • the microwave generator uses a controllable microwave source having a wavelength of 24-26 GHz.
  • the first laser beam used by the pulsed laser emitter has a wavelength of 349 nm.
  • the test method excites a semiconductor test sample by means of a pulsed laser to generate an electron-hole pair, that is, produces a photoconductive effect; and after the demand is reached, turns off the pulsed laser, and thus, the semiconductor test sample
  • the unbalanced carriers will gradually recombine due to the difference in recombination rate and generation rate; and the photoconducting effect and the unbalanced carriers can be
  • the weakening process is gradually disappeared and detected, thereby obtaining the composite lifetime of the unbalanced carriers of the semiconductor test sample; the entire test process is performed in a non-contact manner, due to different silicon single crystal rods, transistors, and switching tubes.
  • the device has different requirements for the semiconductor and its composite life. The detection of the composite lifetime will enable the related device to perform better, and the contactless and non-contaminating test process is beneficial to the improvement of the test accuracy.
  • FIG. 1 is a flow chart of a method of testing a semiconductor material in an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a testing process of a test method in an embodiment of the present application.
  • FIG 3 is a schematic view of a testing device for a semiconductor material according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a testing device for a semiconductor material according to another embodiment of the present application.
  • FIG. 5 is a schematic diagram of a testing device for a semiconductor material according to still another embodiment of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • connection or integral connection; may be mechanical connection or electrical connection; may be directly connected, or may be indirectly connected through an intermediate medium, and may be internal communication between the two components.
  • connection or integral connection; may be mechanical connection or electrical connection; may be directly connected, or may be indirectly connected through an intermediate medium, and may be internal communication between the two components.
  • FIG. 1 is a flow chart of a method for testing a semiconductor material according to an embodiment of the present application, including the steps of:
  • test sample is excited by a pulsed laser to generate a photoconductive effect
  • the composite lifetime of the unbalanced carriers of the test sample is obtained by analyzing the photoconductive effect and the weakening information.
  • test sample is excited by a pulsed laser to generate electron-hole pairs, thereby producing a photoconductive effect.
  • the test method of the embodiment of the present application is to excite the semiconductor test sample by pulse laser to generate an electron-hole pair, that is, to generate a photoconductive effect; and after the demand is met, turn off the pulse laser, and thus, the semiconductor test
  • the pulse laser excitation is cancelled, the unbalanced carriers will gradually disappear and disappear due to the difference of the recombination rate and the generation rate; and the photoconducting effect and the unbalanced carriers can be obtained by the microwave reflection mode.
  • the weakening process is gradually detected and disappeared to obtain the composite lifetime of the unbalanced carriers of the semiconductor test sample; the entire test process is performed in a non-contact manner due to the silicon single crystal rod, the transistor, the switch tube, and the like.
  • Different devices have different requirements for semiconductors and their composite lifetimes. The detection of the composite lifetime will enable the related devices to perform better, and the contactless and non-contaminating test process is beneficial to the improvement of test accuracy.
  • the semiconductor in the embodiment of the present application may refer to an active layer film including an N-type silicon germanium compound (n+-SixGey), a P-type silicon germanium compound (p+-SixGey); and an N-type doped silicon germanium compound.
  • the method of the embodiments of the present application can detect non-destructively in the absence of contact and non-contamination; of course, for other semiconductor materials, the test method of the embodiments of the present application is also applicable, where appropriate.
  • the display panel uses a semiconductor material to fabricate an active switch. Therefore, the technical solution of the embodiment of the present application has a wide application in the field of display technology.
  • FIG. 2 is a schematic diagram of a test process of a test method according to an embodiment of the present application, wherein the vertical axis corresponds to the microwave signal V, and the horizontal axis corresponds to time; referring to FIG. 2, it can be seen from FIG. 1 that the present embodiment is optional, and the pulse laser excitation test is optional.
  • the sample, before the step of producing a photoconductive effect further includes:
  • the initial conductivity ⁇ 0 of the test sample is detected, and the corresponding initial microwave signal V0.
  • the present scheme tests the same, which is beneficial to improve the test accuracy of the present application; wherein the A phase in FIG. 2 corresponds to pulsed laser injection.
  • the initial conductivity ⁇ 0 of the test sample at this time, and the corresponding initial microwave signal V0, the microwave signal is stable.
  • the step of exciting the test sample by pulsed laser to generate a photoconductive effect includes:
  • ⁇ is the amount of change in photoconductivity
  • ⁇ V is the amount of change in the microwave signal.
  • the detection is performed. The amount of change can be obtained, the detection is beneficial for later calculation, and the test accuracy can be improved; wherein the B phase in FIG. 2 corresponds to the stage after the pulse laser injection, and the injection of the pulse laser excites the material content to generate electron-hole Yes, and the phenomenon of photoconductivity is generated, which causes the microwave reflectivity to change, which in turn causes changes in the microwave signal.
  • the effect formula of the photoconductive effect is:
  • ⁇ q( ⁇ n ⁇ e+ ⁇ p ⁇ p), where ⁇ is the amount of change in photoconductivity, q is the electron charge, ⁇ n is the electron concentration generated by laser excitation, ⁇ p is the hole concentration, ⁇ e is the electron mobility, and ⁇ p is empty. Acupoint mobility.
  • the weakening information of the photoconductive effect is detected by microwave reflection
  • the weak signal includes: an exponential decay curve of the microwave signal V, and the formula is:
  • V V0*e -t/ ⁇ ;
  • V0 refers to the initial microwave signal V0
  • t refers to the pulse laser turn-off time
  • ⁇ refers to the average lifetime of unbalanced carriers before recombination, called unbalanced Carrier composite lifetime.
  • the weakening process of the conductance effect and the unbalanced carriers will gradually disappear and disappear by the microwave mode, and the semiconductor can be obtained by analyzing the photoconductive effect and the variation curve of the microwave signal V.
  • the composite life of the test sample wherein the C phase in FIG. 2 is the phase after the pulse laser is turned off, in which the conductivity of the test sample is gradually reduced to zero due to the ⁇ , and the material is internally unbalanced.
  • the flow is gradually attenuated to 0 due to its composite concentration ⁇ n, and the process corresponds to a change curve of the microwave signal V.
  • the change curve the composite life of the unbalanced carriers can be obtained; of course, other methods than the microwave reflection method are adopted. It is also possible to detect the weak information as long as it is applicable.
  • the wavelength of the pulsed laser is 249 nm to 449 nm.
  • the wavelength of the pulsed laser is 349 nm.
  • the microwave reflection mode is implemented by a controllable microwave source, and the microwave wavelength of the controllable microwave source is 24-26 GHz.
  • Test equipment including:
  • a pulsed laser emitter 30 for exciting a test sample to produce a photoconductive effect
  • a microwave receiver 20 configured to receive the weak information
  • a calculation unit (not shown) for obtaining the composite lifetime of the unbalanced carriers of the test sample by analyzing the photoconductive effect and the weakening information.
  • the test device of the embodiment of the present application is used to implement the test mode disclosed in the present application, and the test method is to excite the semiconductor test sample by pulse laser to generate an electron-hole pair, that is, to generate a photoconductive effect; After the demand, the pulsed laser is turned off.
  • the unbalanced carriers will gradually recombine due to the difference in the recombination rate and the generation rate; and the microwave reflection is
  • the method can detect the photoconductive effect and the weakening process that the unbalanced carriers will gradually disappear and disappear, thereby obtaining the composite lifetime of the unbalanced carriers of the semiconductor test sample; the whole test process is through non-contact
  • the detection of the composite lifetime will enable the related devices to perform better.
  • a structure such as a phase sensitive detector, a circutator, and a waveguide may be actually included, but the structure of other parts is not the main application content of the present application, and therefore will not be described.
  • a calculation unit for calculating an exponential decay curve of the microwave signal V may also be included.
  • microwave generator and the microwave receiver can be combined into one probe implementation.
  • the microwave generator, the microwave receiver, and the pulsed laser generator can be combined and used in the same test device, as appropriate. It is not necessary to replace the test device multiple times during the test, but only the switching function is required, so that the time error of the replacement device can be reduced. Improve test accuracy.
  • the microwave generator adopts a controllable microwave source having a wavelength of 24-26 GHz;
  • the pulsed laser used in the pulsed laser emitter has a wavelength of 349 nm.
  • FIG. 4 is a schematic diagram of a testing device for a semiconductor material according to another embodiment of the present application.
  • an embodiment of the present application provides a testing apparatus including: a pulsed laser transmitter 100, a microwave generator 200, a shunt 300, a circulator 400, and a detector 500.
  • the pulsed laser emitter 100 can emit a first laser beam toward the test sample 60, for example, the wavelength of the first laser beam is 349 nm, wherein the test sample 60 can include, for example, an insulating substrate and a conductive film disposed on the insulating substrate.
  • the excitation of the first laser beam emitted by the pulsed laser emitter 100 causes a photoconductive effect to occur in the conductive film in the test sample 60.
  • the microwave generator 200 can emit microwaves, for example, the microwave generator 200 employs a controllable microwave source having a wavelength of 24-26 GHz.
  • the microwaves emitted by the pulsed laser emitter 100 are shunted by the shunt 300 into two features (eg, wavelength, amplitude, frequency, etc.) of the same first microwave and second microwave, wherein the first microwave is directly output to the detector through the shunt 300 500 is not incident on the test sample 60, and the second microwave is incident from the flow divider 300 and the circulator 400 to the test sample 60.
  • the test sample 60 After the second microwave is incident on the test sample 60, the test sample 60 will reflect the second microwave, then the circulator 400 receives the second microwave reflected by the test sample 60 and outputs the received second microwave to the detector 500.
  • detector 500 can detect and compare the first microwave from shunt 300 and the second microwave from circulator 400 that is reflected by test sample 60 to produce debilitating information. It should be understood by those skilled in the art that, in fact, the circulator 400 can also output the second microwave reflected by the test sample 60 to the shunt 300, and then output the second microwave to the detector 500 through the shunt 300.
  • detector 500 can include phase detector 500, amplitude detector 500, or other suitable detector, wherein phase detector 500 is used to detect a phase offset between the first microwave and the second microwave, while amplitude detector 500 And used to detect a difference in amplitude between the first microwave and the second microwave.
  • the detector 500 can compare the change between the first microwave outputted by the microwave generator 200 and the second microwave reflected by the test sample 60 which produces the photoconductive reaction after the output of the microwave generator 200 is outputted.
  • the test apparatus of the present application may further include a calculation unit for obtaining a composite lifetime of the unbalanced carriers of the test sample 60 by analyzing the photoconductive effect and the weakening information.
  • the testing apparatus may further include a feedback adjustment module for storing the predetermined weakening information, and the feedback adjusting module compares the stored predetermined degraded information and the weakening information from the detector 500, and adjusts according to the comparison result.
  • the pulsed laser emitter 100 produces a second laser beam that is different from the first laser beam, and the resulting second laser beam can be incident on the test sample 60, causing the test sample 60 to produce different degrees of photoconductive reaction.
  • FIG. 5 is a schematic diagram of a testing device for a semiconductor material according to still another embodiment of the present application.
  • a test apparatus according to an embodiment of the present application includes a pulsed laser transmitter 100, a microwave generator 200, a shunt 300, a circulator 400, and a detector 500.
  • the microwave generator 200 can emit microwaves to the shunt 300, and shunt the microwaves from the microwave generator 200 into two first and second microwaves having the same characteristics (eg, wavelength, amplitude, frequency, etc.) through the shunt 300.
  • the first microwave is incident from the shunt 300 through the circulator 400 to the test sample 60 before the pulsed laser emitter 100 emits the first laser beam.
  • the test sample 60 After the first microwave generated by the microwave generator 200 is sequentially incident on the test sample 60 through the flow divider 300 and the circulator 400, the test sample 60 will reflect the first microwave, and the circulator 400 receives the test sample. The first microwave reflected 60 is output to the detector 500.
  • the pulsed laser emitter 100 can emit a first laser beam toward the test sample 60 to excite a photoconductive effect in the conductive film of the test sample 60.
  • the second microwave is incident from the flow divider 300 through the circulator 400 to the test sample 60.
  • the test sample 60 After the second microwave is incident on the test sample 60, the test sample 60 will reflect the second microwave, then the circulator 400 receives the second microwave reflected by the test sample 60, and then outputs the received second microwave to the detector 500.
  • the detector 500 can detect and compare the change between the first microwave reflected by the test sample 60 before the photoconductive reaction occurs and the second microwave reflected by the test sample 60 after the photoconductive reaction of the laser beam.
  • Information such as the composite lifetime of unbalanced carriers.
  • the testing apparatus may further include a feedback adjustment module for storing the predetermined weakening information, and the feedback adjusting module compares the stored predetermined degraded information and the weakening information from the detector 500, and adjusts according to the comparison result.
  • the pulsed laser emitter 100 produces a second laser beam that is different from the first laser beam, and the resulting second laser beam can be incident on the test sample 60, causing the test sample 60 to produce different degrees of photoconductive reaction.
  • the test method excites a semiconductor test sample by means of a pulsed laser to generate an electron-hole pair, that is, produces a photoconductive effect; and after the demand is reached, turns off the pulsed laser, and thus, the semiconductor test sample
  • the unbalanced carriers will gradually recombine due to the difference in recombination rate and generation rate; and the photoconducting effect and the unbalanced carriers can be
  • the weakening process is gradually disappeared and detected, thereby obtaining the composite lifetime of the unbalanced carriers of the semiconductor test sample; the entire test process is performed in a non-contact manner, due to different silicon single crystal rods, transistors, and switching tubes.
  • the device has different requirements for the semiconductor and its composite life. The detection of the composite lifetime will enable the related device to perform better, and the contactless and non-contaminating test process is beneficial to the improvement of the test accuracy.

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Abstract

本申请实施例公开了一种半导体的测试方法和测试装置，该测试方法包括步骤：通过脉冲激光激发测试样品，产生光电导效应；探测光电导效应的衰弱信息；通过分析光电导效应和衰弱信息从而得到测试样品非平衡载流子的复合寿命。该测试装置包括：脉冲激光发射器，微波发生器，微波接收器，计算单元。

Description

一种半导体的测试方法和测试装置 技术领域
本申请实施例涉及显示技术领域，更具体的说，涉及一种半导体的测试方法和测试装置。
 背景技术
载流子寿命就是指非平衡载流子的寿命。而非平衡载流子一般也就是非平衡少数载流子（因为只有少数载流子才能注入到半导体内部、并积累起来，多数载流子即使注入进去后也就通过库仑作用而很快地消失了），所以非平衡载流子寿命也就是指非平衡少数载流子寿命，即少数载流子寿命。例如，对n型半导体，非平衡载流子寿命也就是指的是非平衡空穴的寿命。
对于主要是依靠少数载流子输运（扩散为主）来工作的双极型半导体器件，少数载流子寿命是一个直接影响到器件性能的重要参量。这时，常常采用的一个相关参量就是少数载流子扩散长度L（等于扩散系数与寿命之乘积的平方根），L即表征少数载流子一边扩散、一边复合所能够走过的平均距离。少数载流子寿命越长，扩散长度就越大。
对于双极结型晶体（BJT），为了保证少数载流子在基区的复合尽量少（以获得很大的电流放大系数），则必须把基区宽度缩短到少数载流子的扩散长度以下。因此，要求基区的少数载流子寿命越长越好。
由于不同的半导体器件对于载流子复合寿命的需求不同，故而如何准确的测试出半导体材料的载流子复合寿命非常的重要。
应该注意，上面对技术背景的介绍只是为了方便对本申请的技术方案进行清楚、完整的说明，并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本申请的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。
 技术问题
本申请实施例首先要解决的技术问题是提供一种能够检测半导体的非平衡载流子复合寿命的半导体材料的测试方法。
本申请实施例进一步要解决的技术问题是提供一种使用检测半导体的非平衡载流子复合寿命的半导体材料的测试方法的测试装置。
 技术解决方案
本申请实施例首先提供了一种半导体材料的测试方法，包括步骤：
通过脉冲激光激发测试样品，产生光电导效应；
探测光电导效应的衰弱信息；
通过分析光电导效应和衰弱信息从而得到测试样品非平衡载流子的复合寿命。
进一步的，所述通过脉冲激光激发测试样品，产生光电导效应的步骤之前还包括：
检测测试样品的初始电导率σ0，以及对应的初始微波信号V0。本实施方案中，由于该半导体测试样品存在初始电导率和初始微波信号V0，本方案对其进行测试，有利于提高本申请的测试精度。
进一步的，所述通过脉冲激光激发测试样品，产生光电导效应的步骤包括：
检测测试样品的电导率σ和微波信号V，并分别根据公式σ=σ0+Δσ求得Δσ，以及公式V=V0+ΔV求得ΔV；
Δσ为光致电导率的变化量，而ΔV为微波信号变化量。本实施方案中，由于脉冲激光的激发，该半导体测试样品的内部将产生电子-空穴对，并产生光电导导致微波反射率发生变化，进而引起微波信号V的变化，本方案中，通过检测可以得到其变化量，该检测有利于后期的计算，并能够提高测试精度。
进一步的，所述光电导效应的效应公式为：
Δσ=q(Δnμe+Δpμp)，其中Δσ为光致电导率的变化量，q为电子电量，Δn为激光激发产生的电子浓度，Δ p为空穴浓度，μe为电子迁移率，μp为空穴迁移率。本实施方案中，该光电导对应的效应公式为Δσ=q(Δnμe+Δpμp)，其中，由于电子和空穴对通常承兑产生，故而Δn=Δp。
进一步的，所述探测光电导效应的衰弱信息的步骤包括：
采用微波反射方式探测光电导效应的衰弱信息；
所述衰弱信号包括：微波信号V的指数衰减曲线，其公式为：
V=V0*e -t/ τ；其中V0指的是初始微波信号，t指的是脉冲激光关断时间，τ指的是非平衡载流子在复合前的平均生存时间，称为非平衡载流子复合寿命。本实施方案中，通过该微波方式，能够对电导效应和该非平衡载流子将逐渐复合消失掉这一衰弱过程进行检测，通过分析光电导效应和微波信号V的变化曲线可以得出该半导体测试样品的复合寿命。
进一步的，所述脉冲激光的波长为：249nm-449nm。
进一步的，所述脉冲激光的波长为349nm。
进一步的，所述微波反射方式由可控微波源实现，所述可控微波源采用的微波波长为24-26GHz。
本申请实施例还提供了一种使用于如上任一所述的半导体材料的测试方法的测试装置，包括：
脉冲激光发射器，用于激发测试样品，产生光电导效应；
微波发生器，用于探测光电导效应的衰弱信息；
微波接收器，用于接收所述衰弱信息；
计算单元，用于通过分析光电导效应和衰弱信息从而得到测试样品非平衡载流子的复合寿命。本实施方案中，实际上还可以包括相敏检测器（Phase sensitive detector）、触发器（circutator）和波导（waveguide）等结构，但是其他部分的结构不是本申请的主要申请内容，故而不予赘述；另外，还可以包括用于计算该微波信号V的指数衰减曲线的计算单元。
进一步的，所述微波发生器采用波长为24-26GHz的可控微波源；
所述脉冲激光发射器使用的脉冲激光的波长为349nm。
本申请实施例还提供了一种测试装置，包括：
脉冲激光发射器，用于发射第一激光束，以激发测试样品产生光电导效应；
微波发生器，用于发射微波；
分流器，用于将来自所述微波发生器的所述微波分流为第一微波和第二微波，并输出所述第一微波和所述第二微波；
循环器，用于朝所述测试样品发射来自所述分流器的所述第二微波，并且输出通过所述测试样品反射的所述第二微波；以及
检测器，用于检测并比对来自所述分流器的所述第一微波和来自所述循环器的通过所述测试样品反射的所述第二微波，以产生衰弱信息。
进一步的，在所述第一激光束入射至所述测试样品之前所述第一微波通过所述分流器以及所述循环器入射到所述测试样品，和在所述第一激光束入射至所述测试样品之后所述第二微波通过所述分流器以及所述循环器入射到所述测试样品。
进一步的，所述微波发生器用于在所述第一激光束入射至所述测试样品之后发射所述微波，并通过所述分流器将所述微波分流为相同的所述第一微波和所述第二微波，所述第一微波通过所述分流器直接输出至所述检测器而未入射至所述测试样品，所述第二微波依序通过所述分流器和所述循环器入射至所述测试样品。
进一步的，所述测试装置还包括计算单元，用于通过分析所述光电导效应和所述衰弱信息，从而得到所述测试样品非平衡载流子的复合寿命。
进一步的，所述测试样品包括绝缘衬底以及设置于所述绝缘衬底上的导电薄膜，所述光电导效应发生在所述导电薄膜中。
进一步的，所述测试装置还包括反馈调节模块，用以储存预定衰弱信息，并且所述反馈调节模块比对所述预定衰弱信息和来自所述检测器的所述衰弱信息，并且根据比对结果调整所述脉冲激光发射器产生不同于的所述第一激光束的第二激光束。
进一步的，所述检测器包括相位检测器，用以检测所述第一微波以及所述第二微波之间的相位偏移。
进一步的，所述检测器包括幅度检测器，用以检测所述第一微波以及所述第二微波之间的幅度差。
进一步的，所述微波发生器采用波长为24-26GHz的可控微波源。
进一步的，所述脉冲激光发射器使用的所述第一激光束的波长为349nm。
 有益效果
本申请中，该测试方式通过脉冲激光的方式激发半导体测试样品，使其产生电子-空穴对，即产生光电导效应；并在达到需求后，关断该脉冲激光，如此，该半导体测试样品将在脉冲激光激发撤销的情况下，由于复合率和产生率的差异，非平衡载流子将逐渐复合消失掉；而借助该微波反射方式能够对该光电导效应和该非平衡载流子将逐渐复合消失掉这一衰弱过程进行检测，从而得到该半导体测试样品非平衡载流子的复合寿命；整个测试过程，均通过非接触的方式进行，由于硅单晶棒、晶体管和开关管等不同器件对于半导体及其复合寿命的需求不同，该复合寿命的检测将能够使得相关器件能够发挥出更好地效用，无接触无污染的测试过程，有利于测试精度的提高。
 附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请实施例半导体材料的测试方法的流程图。
图2是本申请实施例测试方法的测试过程示意图。
图3是本申请一实施例半导体材料的测试装置的示意图。
图4是本申请另一实施例半导体材料的测试装置的示意图。
图5是本申请又一实施例半导体材料的测试装置的示意图。
本申请的实施方式
参照后文的说明和附图，详细公开了本申请的特定实施方式，指明了本申请的原理可以被采用的方式。应该理解，本申请的实施方式在范围上并不因而受到限制。在所附权利要求的精神和条款的范围内，本申请的实施方式包括许多改变、修改和等同。
针对一种实施方式描述和/或示出的特征可以以相同或类似的方式在一个或更多个其它实施方式中使用，与其它实施方式中的特征相组合，或替代其它实施方式中的特征。
应该强调，术语“包括/包含”在本文使用时指特征、整件、步骤或组件的存在，但并不排除一个或更多个其它特征、整件、步骤或组件的存在或附加。
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或组件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个组件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
图1是本申请实施例一种半导体材料的测试方法的流程图，包括步骤：
S1、通过脉冲激光激发测试样品，产生光电导效应；
S2、探测光电导效应的衰弱信息；
S3、通过分析光电导效应和衰弱信息从而得到测试样品非平衡载流子的复合寿命。
具体来讲，通过脉冲激光激发测试样品，使其产生电子-空穴对，从而产生光电导效应。
本申请实施例的测试方法是通过脉冲激光的方式激发半导体测试样品，使其产生电子-空穴对，即产生光电导效应；并在达到需求后，关断该脉冲激光，如此，该半导体测试样品将在脉冲激光激发撤销的情况下，由于复合率和产生率的差异，非平衡载流子将逐渐复合消失掉；而借助该微波反射方式能够对该光电导效应和该非平衡载流子将逐渐复合消失掉这一衰弱过程进行检测，从而得到该半导体测试样品非平衡载流子的复合寿命；整个测试过程，均通过非接触的方式进行，由于硅单晶棒、晶体管和开关管等不同器件对于半导体及其复合寿命的需求不同，该复合寿命的检测将能够使得相关器件能够发挥出更好地效用，无接触无污染的测试过程，有利于测试精度的提高。
本申请实施例中的半导体可以指的是活性层薄膜，该活性层薄膜包括N型硅锗化合物（n+-SixGey）,P型硅锗化合物（p+-SixGey）;N型掺杂氧化硅锗化合物Nn-dopedSiGe-rich SixGeyOz,P型掺杂氧化硅锗化合物（p-doped SiGe-rich SixGeyOz n+ or p+-layer）;氧化硅锗化合物（SixGey and SiGe-rich SixGeyOx）。本申请实施例的方法能够在无接触无污染情况下，非破坏性的对其进行检测；当然，对于其他的半导体材料，在合适的情况下，本申请实施例的测试方法也是适用的。在显示技术领域，显示面板多采用半导体材料制作主动开关，因此，本申请实施例的技术方案在显示技术领域有广泛的应用。
图2是本申请实施例测试方法的测试过程示意图，其中，该纵轴对应微波信号V，横轴对应时间；参考图2，结合图1可知，本实施例可选的，通过脉冲激光激发测试样品，产生光电导效应的步骤之前还包括：
检测测试样品的初始电导率σ0，以及对应的初始微波信号V0。本实施方案中，由于该半导体测试样品存在初始电导率和初始微波信号V0，本方案对其进行测试，有利于提高本申请的测试精度；其中，该图2中的A阶段即对应脉冲激光注入前的阶段，此时测试样品的初始电导率σ0，以及对应的初始微波信号V0，该微波信号稳定。
本实施例可选的，通过脉冲激光激发测试样品，产生光电导效应的步骤包括：
检测测试样品的电导率σ和微波信号V，并分别根据公式σ=σ0+Δσ求得Δσ，以及公式V=V0+ΔV求得ΔV；
Δσ为光致电导率的变化量，而ΔV为微波信号变化量。本实施方案中，由于脉冲激光的激发，该半导体测试样品的内部将产生电子-空穴对，并产生光电导导致微波反射率发生变化，进而引起微波信号V的变化，本方案中，通过检测可以得到其变化量，该检测有利于后期的计算，并能够提高测试精度；其中，该图2中的B阶段对应脉冲激光注入后的阶段，脉冲激光的注入激发了材料内容产生电子-空穴对，及产生光电导现象，导致微波反射率发生变化，进而引起微波信号的变化。
本实施例可选的，光电导效应的效应公式为：
Δσ=q(Δnμe+Δpμp)，其中Δσ为光致电导率的变化量，q为电子电量，Δn为激光激发产生的电子浓度，Δ p为空穴浓度，μe为电子迁移率，μp为空穴迁移率。本实施方案中，该光电导对应的效应公式为Δσ=q(Δnμe+Δpμp)，其中，由于电子和空穴对通常承兑产生，故而Δn=Δp。
本实施例可选的，探测光电导效应的衰弱信息的步骤包括：
采用微波反射方式探测光电导效应的衰弱信息；
所述衰弱信号包括：微波信号V的指数衰减曲线，其公式为：
V=V0*e -t/ τ；其中V0指的是初始微波信号V0，t指的是脉冲激光关断时间，τ指的是非平衡载流子在复合前的平均生存时间，称为非平衡载流子复合寿命。本实施方案中，通过该微波方式，能够对电导效应和该非平衡载流子将逐渐复合消失掉这一衰弱过程进行检测，通过分析光电导效应和微波信号V的变化曲线可以得出该半导体测试样品的复合寿命；其中，该图2中的C阶段则是脉冲激光关断后的阶段，该阶段中，该测试样品的电导率，由于该Δσ逐渐减少以至于零，材料内部非平衡载流子因为其复合浓度Δn逐渐衰减至0，该过程对应表现为微波信号V的变化曲线，根据该变化曲线，可以得到非平衡载流子的复合寿命；当然，采用微波反射方式以外的其他方式检测该衰弱信息也是可以的，只要适用即可。
本实施例可选的，脉冲激光的波长为：249nm-449nm。
本实施例可选的，所述脉冲激光的波长为349nm。
本实施例可选的，微波反射方式由可控微波源实现，所述可控微波源采用的微波波长为24-26GHz。
图3是本申请一实施例的测试装置的示意图，参考图3，结合图1和图2可知，本申请一实施例还公开了一种使用于如前任一所述的半导体材料的测试方法的测试装置，包括：
脉冲激光发射器30，用于激发测试样品，产生光电导效应；
微波发生器10，用于探测光电导效应的衰弱信息；
微波接收器20，用于接收所述衰弱信息；
计算单元（图中未示出），用于通过分析光电导效应和衰弱信息从而得到测试样品非平衡载流子的复合寿命。
本申请实施例的测试装置用于实现本申请公开的测试方式，而该测试方法是通过脉冲激光的方式激发半导体测试样品，使其产生电子-空穴对，即产生光电导效应；并在达到需求后，关断该脉冲激光，如此，该半导体测试样品将在脉冲激光激发撤销的情况下，由于复合率和产生率的差异，非平衡载流子将逐渐复合消失掉；而借助该微波反射方式能够对该光电导效应和该非平衡载流子将逐渐复合消失掉这一衰弱过程进行检测，从而得到该半导体测试样品非平衡载流子的复合寿命；整个测试过程，均通过非接触的方式进行，由于硅单晶棒、晶体管和开关管等不同器件对于半导体及其复合寿命的需求不同，该复合寿命的检测将能够使得相关器件能够发挥出更好地效用。
本实施方案中，实际上还可以包括相敏检测器（Phase sensitive detector）、触发器（circutator）和波导（waveguide）等结构，但是其他部分的结构不是本申请的主要申请内容，故而不予赘述；另外，还可以包括用于计算该微波信号V的指数衰减曲线的计算单元。
另外，该微波发生器和微波接收器可以组合至一个探头实现，当然，在适当情况下，该微波发生器、微波接收器以及脉冲激光发生器可以组合到同一个测试装置中进行使用，如此，便不需要在测试过程中多次更换测试装置，而只需要切换功能即可，如此，可以减少更换装置发生的时间误差。提高测试精度。
本实施例可选的，微波发生器采用波长为24-26GHz的可控微波源；
所述脉冲激光发射器使用的脉冲激光的波长为349nm。
图4是本申请另一实施例半导体材料的测试装置的示意图。如图4所示，本申请一实施例提供一种测试装置包括：脉冲激光发射器100、微波发生器200、分流器300、循环器400以及检测器500。
首先，脉冲激光发射器100可以朝测试样品60发射第一激光束，例如第一激光束的波长为349nm，其中测试样品60可以例如包括绝缘衬底以及设置于绝缘衬底上的导电薄膜，藉由脉冲激光发射器100发射的第一激光束的激发，可使测试样品60中的导电薄膜中发生光电导效应。
在脉冲激光发射器100发射的第一激光束入射至测试样品60之后，微波发生器200可以发射微波，例如微波发生器200采用波长为24-26GHz的可控微波源。脉冲激光发射器100所发射的微波通过分流器300分流为两个特征(例如波长、幅度和频率等)相同的第一微波和第二微波，其中第一微波通过分流器300直接输出至检测器500而未入射至测试样品60，第二微波则从分流器300通过和循环器400入射至测试样品60。
在第二微波入射至测试样品60后，测试样品60将反射第二微波，接着循环器400接收通过测试样品60反射的第二微波，并将接收的第二微波输出至检测器500。
最后，检测器500可以检测并比对来自分流器300的第一微波和来自循环器400的通过测试样品60反射的第二微波，以产生衰弱信息。本领域技术人员应可以理解，实际上，循环器400亦可将通过测试样品60反射的第二微波输出至分流器300，再通过分流器300输出所述第二微波至检测器500。
例如，检测器500可以包括相位检测器500、幅度检测器500或其他适合的检测器，其中相位检测器500用以检测第一微波以及第二微波之间的相位偏移，而幅度检测器500用以检测第一微波以及第二微波之间的幅度差。
也就是说，在本实施例中，检测器500可以比对微波发生器200输出的第一微波与微波发生器200输出后通过产生光电导反应的测试样品60反射的第二微波之间的变化。接着，例如，本申请的测试装置可以还包括计算单元，用于通过分析光电导效应和衰弱信息，从而得到测试样品60的非平衡载流子的复合寿命。
本实施例可选的，测试装置可以还包括反馈调节模块，用以储存预定衰弱信息，并且反馈调节模块比对所储存的预定衰弱信息和来自检测器500的衰弱信息，并且根据比对结果调整脉冲激光发射器100产生不同于的第一激光束的第二激光束，而产生的第二激光束可以入射至测试样品60，使测试样品60产生不同程度的光电导反应。
图5是本申请又一实施例半导体材料的测试装置的示意图。如图5所示，本申请一实施例提供的一种测试装置包括：脉冲激光发射器100、微波发生器200、分流器300、循环器400以及检测器500。
首先，微波发生器200可以发射微波至分流器300，并通过分流器300将来自微波发生器200的微波分流为两个特征(例如波长、幅度和频率等)相同的第一微波和第二微波。在脉冲激光发射器100发射第一激光束之前，第一微波从分流器300通过循环器400入射到测试样品60。
在微波发生器200所产生的第一微波依序通过分流器300和循环器400入射到测试样品60之后，所述测试样品60将反射所述第一微波，循环器400接收通过所述测试样品60反射的第一微波并将其输出至检测器500。
接着，脉冲激光发射器100可以朝测试样品60发射第一激光束，以激发测试样品60的导电薄膜中发生光电导效应。在脉冲激光发射器100发射的第一激光束入射至测试样品60，并且测试样品60的导电薄膜中发生光电导效应之后，第二微波从分流器300通过循环器400入射到测试样品60。
在第二微波入射至测试样品60后，测试样品60将反射第二微波，接着循环器400接收通过测试样品60反射的第二微波，并接着将接收的第二微波输出至检测器500。
最后，检测器500可以检测并比对发生光电导反应前的测试样品60反射的第一微波与通过激光束发生光电导反应后的测试样品60所反射的第二微波之间的变化，从而取得非平衡载流子的复合寿命等信息。
本实施例可选的，测试装置可以还包括反馈调节模块，用以储存预定衰弱信息，并且反馈调节模块比对所储存的预定衰弱信息和来自检测器500的衰弱信息，并且根据比对结果调整脉冲激光发射器100产生不同于的第一激光束的第二激光束，而产生的第二激光束可以入射至测试样品60，使测试样品60产生不同程度的光电导反应。
以上内容是结合具体的优选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。
 工业实用性
本申请中，该测试方式通过脉冲激光的方式激发半导体测试样品，使其产生电子-空穴对，即产生光电导效应；并在达到需求后，关断该脉冲激光，如此，该半导体测试样品将在脉冲激光激发撤销的情况下，由于复合率和产生率的差异，非平衡载流子将逐渐复合消失掉；而借助该微波反射方式能够对该光电导效应和该非平衡载流子将逐渐复合消失掉这一衰弱过程进行检测，从而得到该半导体测试样品非平衡载流子的复合寿命；整个测试过程，均通过非接触的方式进行，由于硅单晶棒、晶体管和开关管等不同器件对于半导体及其复合寿命的需求不同，该复合寿命的检测将能够使得相关器件能够发挥出更好地效用，无接触无污染的测试过程，有利于测试精度的提高。

Claims (20)

  1. 一种半导体材料的测试方法，包括步骤：
    通过脉冲激光激发测试样品，产生光电导效应；
    探测光电导效应的衰弱信息；
    通过分析光电导效应和衰弱信息从而得到测试样品非平衡载流子的复合寿命。
  2. 如权利要求1所述的测试方法，其中，所述通过脉冲激光激发测试样品，产生光电导效应的步骤之前还包括：
    检测测试样品的初始电导率σ0，以及对应的初始微波信号V0。
  3. 如权利要求2所述的测试方法，其中，所述通过脉冲激光激发测试样品，产生光电导效应的步骤包括：
    检测测试样品的电导率σ和微波信号V，并分别根据公式σ=σ0+Δσ求得Δσ，以及公式V=V0+ΔV求得ΔV；
    Δσ为光致电导率的变化量，而ΔV为微波信号变化量。
  4. 如权利要求3所述的测试方法，其中，所述光电导效应的效应公式为：
    Δσ=q(Δnμe+Δpμp)，其中Δσ为光致电导率的变化量，q为电子电量，Δ n为激光激发产生的电子浓度，Δ p为空穴浓度，μe为电子迁移率，μp为空穴迁移率。
  5. 如权利要求4所述的测试方法，其中，所述探测光电导效应的衰弱信息的步骤包括：
    采用微波反射方式探测光电导效应的衰弱信息；
    所述衰弱信号包括：微波信号V的指数衰减曲线，其公式为：
    V=V0*e -t/ τ；其中t指的是脉冲激光关断时间，V0指的是初始微波信号，τ指的是非平衡载流子在复合前的平均生存时间，称为非平衡载流子复合寿命。
  6. 如权利要求1所述的测试方法，其中，所述脉冲激光的波长为：249nm-449nm。
  7. 如权利要求6所述的测试方法，其中，所述脉冲激光的波长为349nm。
  8. 如权利要求1所述的测试方法，其中，所述微波反射方式由可控微波源实现，所述可控微波源采用的微波波长为24-26GHz。
  9. 一种测试装置，包括：
    脉冲激光发射器，用于激发测试样品，产生光电导效应；
    微波发生器，用于探测光电导效应的衰弱信息；
    微波接收器，用于接收所述衰弱信息；
    计算单元，用于通过分析所述光电导效应和所述衰弱信息从而得到测试样品非平衡载流子的复合寿命。
  10. 如权利要求9所述的测试装置，其中，所述微波发生器采用波长为24-26GHz的可控微波源；
    所述脉冲激光发射器使用的脉冲激光的波长为349nm。
  11. 一种测试装置，包括：
    脉冲激光发射器，用于发射第一激光束，以激发测试样品产生光电导效应；
    微波发生器，用于发射微波；
    分流器，用于将来自所述微波发生器的所述微波分流为第一微波和第二微波，并输出所述第一微波和所述第二微波；
    循环器，用于朝所述测试样品发射来自所述分流器的所述第二微波，并且输出通过所述测试样品反射的所述第二微波；以及
    检测器，用于检测并比对来自所述分流器的所述第一微波和来自所述循环器的通过所述测试样品反射的所述第二微波，以产生衰弱信息。
  12. 如权利要求11所述的测试装置，其中，在所述第一激光束入射至所述测试样品之前所述第一微波通过所述分流器以及所述循环器入射到所述测试样品，和在所述第一激光束入射至所述测试样品之后所述第二微波通过所述分流器以及所述循环器入射到所述测试样品。
  13. 如权利要求11所述的测试装置，其中，所述微波发生器用于在所述第一激光束入射至所述测试样品之后发射所述微波，并通过所述分流器将所述微波分流为相同的所述第一微波和所述第二微波，所述第一微波通过所述分流器直接输出至所述检测器而未入射至所述测试样品，所述第二微波依序通过所述分流器和所述循环器入射至所述测试样品。
  14. 如权利要求11所述的测试装置，其中，所述测试装置还包括计算单元，用于通过分析所述光电导效应和所述衰弱信息，从而得到所述测试样品非平衡载流子的复合寿命。
  15. 如权利要求11所述的测试装置，其中，所述测试样品包括绝缘衬底以及设置于所述绝缘衬底上的导电薄膜，所述光电导效应发生在所述导电薄膜中。
  16. 如权利要求11所述的测试装置，其中，所述测试装置还包括反馈调节模块，用以储存预定衰弱信息，并且所述反馈调节模块比对所述预定衰弱信息和来自所述检测器的所述衰弱信息，并且根据比对结果调整所述脉冲激光发射器产生不同于的所述第一激光束的第二激光束。
  17. 如权利要求11所述的测试装置，其中，所述检测器包括相位检测器，用以检测所述第一微波以及所述第二微波之间的相位偏移。
  18. 如权利要求11所述的测试装置，其中，所述检测器包括幅度检测器，用以检测所述第一微波以及所述第二微波之间的幅度差。
  19. 如权利要求11所述的测试装置，其中，所述微波发生器采用波长为24-26GHz的可控微波源。
  20. 如权利要求11所述的测试装置，其中，所述脉冲激光发射器使用的所述第一激光束的波长为349nm。
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