CN102709396A - 基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法 - Google Patents

基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法 Download PDF

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CN102709396A
CN102709396A CN2012101943776A CN201210194377A CN102709396A CN 102709396 A CN102709396 A CN 102709396A CN 2012101943776 A CN2012101943776 A CN 2012101943776A CN 201210194377 A CN201210194377 A CN 201210194377A CN 102709396 A CN102709396 A CN 102709396A
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silicon chip
method based
crystalline silicon
silicon wafer
screening method
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林佳继
朱君兰
赵同荣
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Hanwha Q Cells Qidong Co Ltd
Jiangsu Linyang Solarfun Co Ltd
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Jiangsu Linyang Solarfun Co Ltd
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Abstract

本发明公开了一种基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法，利用脉冲光源作为激发源，使硅片产生过剩载流子从而产生附加光电导，通过检测光电导衰减，将硅片进行区分。本发明可以快速低成本进行筛选。本发明基于光电导效应，利用脉冲激发源向太阳能晶硅硅片注入过剩载流子，然后通过检测电导率测量载流子的衰减行为。

Description

基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法
技术领域
本发明涉及一种太阳能晶硅硅片分析筛选方法。
背景技术
某些半导体材料（包括晶硅硅片）在受到光照等激发源辐照时，当入射（光子）能量等于或大于该材料的禁带宽度Eg时，即当hv≥Eg时，价带中的电子会吸收入射（光子）能量而跃迁至导带，同时在价带中留下空穴，形成电子空穴对。在无外界干扰情况下，受激电子经由不同机制从导带跃迁回价带，与之前所留空穴复合，从激发到复合所需平均时间定义为载流子寿命。载流子衰减或复合速率，或载流子寿命，极大程度反映了半导体材料的某些自身特性，如果杂质，缺陷和表面状态等。在太阳能电池应用中，硅材料的自身特性，如杂质和缺陷，对最终电池性能有极大的影响，特别是其平均效率以及效率分布，因而有必要在电池制作和生产前对硅材料做分析和筛选。载流子衰减由多种机制交互或共同影响，其中包含了对太阳能电池性能有影响的几种复合机制，如杂质和缺陷等。因而载流子衰减的检测提供了一种硅材料的分析和筛选的可能。
目前有多种技术可以用于检测载流子的衰减，其中包括在此技术背景中所举例子，半导体电导率。由于光照引起的载流子变化从而改变电导率的现象称为光电导效应，其电导率的变化Δσ称为光电导率（Photoconductance）。电导率的变化与载流子之间的关系为Δσ＝qμpΔp+qμnΔn，其中q为电子电荷，μp和μn分别为空穴和电子的迁移率。当移除外界光照或其他激发源时，载流子通过不同机制复合从而改变半导体材料的电导率。因而通过检测电导率的变化可以测量半导体材料的载流子复合或载流子寿命。太阳能晶硅硅片的载流子寿命是不同复合机制共同作用的结果，最终通过电导率变化检测的实际上是硅片的有效寿命，是发生在硅片表面和体内所有复合的叠加。为有效了解硅片的真实体寿命，常规做法是利用化学或物理钝化的方法降低表面复合的影响，然后以有效寿命来作为体寿命的最低可能值。这种做法需要对硅片做进一步的处理，其速度和成本限制了该技术在硅片分析筛选的工业应用。
发明内容
本发明的目的在于提供一种可以快速和低成本筛选的基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法。
本发明的技术解决方案是：
一种基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法，其特征是：利用脉冲光源作为激发源，使硅片产生过剩载流子从而产生附加光电导，通过检测光电导衰减，将硅片进行区分。
本发明可以快速低成本进行筛选。是基于光电导效应，利用脉冲激发源向太阳能晶硅硅片注入过剩载流子，然后通过检测电导率测量载流子的衰减行为。不同的载流子复合机制在不同时间段的主导地位导致了不同衰减速度。在合适的衰减时间段（取决于硅片批次的平均质量），表面复合的影响对有效寿命的影响降至最低，再加上其载流子体扩散的自身限制，在这一特定时间段光电导衰减体现的有效寿命可有效提取和分析太阳能晶硅硅片的体寿命，以此对其进行筛选。
附图说明
下面结合附图和实施例对本发明作进一步说明。
图1是本发明一个实施例的硅片筛选情况图。
图1中横坐标为硅片编号。
具体实施方式
一种基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法，利用脉冲光源作为激发源，使硅片产生过剩载流子从而产生附加光电导，因光生载流子漂移及衰减运动，光电导随之衰减，通过检测光电导衰减，根据其不同的载流子衰减行为，将硅片进行区分呈合格硅片和低质量硅片。如图一所示：在特定时间段光电导衰减体现的有效寿命可有效提取和分析太阳能晶硅硅片的体寿命，此时光电导衰减速率越快，反映载流子的复合速率VR越高，即硅片的质量越差；合格硅片的复合速率VR越低，-VR越大，低质量硅片的复合速率VR较高，-VR越小。利用该方法分类后硅片与混合前的所属类别一致，具体极高的可靠性和重复性。

Claims (1)

1.一种基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法，其特征是：利用脉冲光源作为激发源，使硅片产生过剩载流子从而产生附加光电导，通过检测光电导衰减，将硅片进行区分。
CN2012101943776A 2012-06-13 2012-06-13 基于过剩载流子衰减的太阳能晶硅硅片分析筛选方法 Pending CN102709396A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107591340A (zh) * 2017-08-01 2018-01-16 惠科股份有限公司 一种半导体的测试方法和测试装置
CN111386593A (zh) * 2017-11-22 2020-07-07 信越半导体株式会社 单晶硅基板的分选方法以及单晶硅基板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1540735A (zh) * 2003-10-30 2004-10-27 上海交通大学 太阳电池少数载流子寿命分析仪

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1540735A (zh) * 2003-10-30 2004-10-27 上海交通大学 太阳电池少数载流子寿命分析仪

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107591340A (zh) * 2017-08-01 2018-01-16 惠科股份有限公司 一种半导体的测试方法和测试装置
CN111386593A (zh) * 2017-11-22 2020-07-07 信越半导体株式会社 单晶硅基板的分选方法以及单晶硅基板
CN111386593B (zh) * 2017-11-22 2023-09-26 信越半导体株式会社 单晶硅基板的分选方法以及单晶硅基板

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Application publication date: 20121003