WO2019024176A1 - 数字温度传感器电路 - Google Patents

数字温度传感器电路 Download PDF

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Publication number
WO2019024176A1
WO2019024176A1 PCT/CN2017/101203 CN2017101203W WO2019024176A1 WO 2019024176 A1 WO2019024176 A1 WO 2019024176A1 CN 2017101203 W CN2017101203 W CN 2017101203W WO 2019024176 A1 WO2019024176 A1 WO 2019024176A1
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Prior art keywords
digital
conversion unit
analog
temperature sensor
current source
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PCT/CN2017/101203
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English (en)
French (fr)
Inventor
胡蓉彬
王健安
付东兵
陈光炳
张正平
蒋和全
胡刚毅
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中国电子科技集团公司第二十四研究所
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Priority to US16/636,021 priority Critical patent/US20220228928A1/en
Publication of WO2019024176A1 publication Critical patent/WO2019024176A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K15/00—Testing or calibrating of thermometers
    • G01K15/005—Calibration
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/30—Monitoring
    • G06F11/3058—Monitoring arrangements for monitoring environmental properties or parameters of the computing system or of the computing system component, e.g. monitoring of power, currents, temperature, humidity, position, vibrations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00—Automatic control of voltage, current, or power
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M3/00—Conversion of analogue values to or from differential modulation
    • H03M3/30—Delta-sigma modulation
    • H03M3/39—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators
    • H03M3/412—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators characterised by the number of quantisers and their type and resolution
    • H03M3/422—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators characterised by the number of quantisers and their type and resolution having one quantiser only
    • H03M3/43—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators characterised by the number of quantisers and their type and resolution having one quantiser only the quantiser being a single bit one
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M3/00—Conversion of analogue values to or from differential modulation
    • H03M3/30—Delta-sigma modulation
    • H03M3/39—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators
    • H03M3/436—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators characterised by the order of the loop filter, e.g. error feedback type
    • H03M3/456—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators characterised by the order of the loop filter, e.g. error feedback type the modulator having a first order loop filter in the feedforward path
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2219/00—Thermometers with dedicated analog to digital converters
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/30—Monitoring
    • G06F11/3089—Monitoring arrangements determined by the means or processing involved in sensing the monitored data, e.g. interfaces, connectors, sensors, probes, agents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M3/00—Conversion of analogue values to or from differential modulation
    • H03M3/30—Delta-sigma modulation
    • H03M3/458—Analogue/digital converters using delta-sigma modulation as an intermediate step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Definitions

  • the invention belongs to the field of integrated circuit technology, and in particular relates to a digital temperature sensor circuit.
  • the traditional method of placing a temperature sensor on the back of the chip to measure the temperature often the above method can not accurately measure the internal temperature of the chip, especially for high-power devices, the internal temperature distribution of the chip is not balanced, there are local hot spots, so that the measured temperature It is not able to accurately reflect the circuit temperature and cannot be effectively protected in time.
  • an object of the present invention is to provide a digital temperature sensor circuit for solving the problem that the digital temperature sensor circuit in the prior art can effectively and timely protect the circuit due to the inability to accurately collect the circuit temperature.
  • a digital temperature sensor circuit comprising:
  • a PTAT current source for generating a PTAT current proportional to absolute temperature
  • a sigma-delta modulation module comprising an integrator, an analog to digital conversion unit and a feedback digital to analog conversion unit, the integrator for converting the PTAT current into a temperature voltage; the analog to digital conversion unit for using the temperature and voltage Comparing with the bandgap reference voltage to generate a digital modulation signal whose duty ratio is proportional to the temperature; the feedback digital-to-analog conversion unit is configured to adjust a voltage control integrator charging and discharging speed input by the analog-to-digital conversion unit;
  • a digital filter for quantizing the digital modulated signal into a digital signal and outputting.
  • the anode of the PTAT current source is connected to the power supply voltage, and the cathode thereof is connected to the input end of the analog to digital conversion unit.
  • the integrator is an integrating capacitor, and one end of the integrating capacitor is respectively connected to an output end of the PTAT current source and an input end of an analog-to-digital conversion unit, and the other end of the integrating capacitor is grounded.
  • the analog-to-digital conversion unit includes a comparator, a first flip-flop and a second flip-flop, and the non-inverting input terminal of the comparator is connected to the bandgap reference voltage, and the non-inverting input terminal is connected The output of the integrator, its positive phase output
  • the first trigger is connected to the first flip-flop, the first flip-flop outputs a digital modulation signal, the negative-phase output terminal is connected to the second flip-flop, and the second flip-flop output terminal is connected to the feedback digital-to-analog conversion unit.
  • the comparator is a dynamic comparator.
  • the feedback digital-to-analog conversion unit includes a differential pair composed of a first NMOS transistor and a second NMOS transistor, and a first constant current source, and a gate of the first NMOS transistor is connected to the second trigger.
  • the output of the device is connected to the input end of the PTAT current source; the gate of the second NMOS transistor is connected to the non-Q output terminal of the first flip-flop, and the drain thereof is connected to the power supply voltage, the differential pair
  • the source is connected to the anode of the first constant current source, and the cathode of the first constant current source is grounded.
  • the first trigger and the second trigger are both D-type flip-flops.
  • control ends of the first and second flip-flops and the input end of the digital filter are respectively connected to a clock signal.
  • the method further includes: a current adjustment module respectively connected to the PTAT current source and the integrator for adjusting the current magnitude in the input integrator.
  • the current regulating module is a second constant current source, the positive pole of which is connected to the PTAT current source, and the negative pole thereof is grounded.
  • the digital filter is a digital low pass filter.
  • the digital temperature sensor circuit of the present invention has the following advantageous effects:
  • the invention integrates the temperature sensor in the same chip of the circuit under test, and uses the sigma-delta modulation module to modulate the PTAT current to generate a digital modulation signal, wherein the integration is omitted in the modulation module.
  • the amplifier greatly reduces the power consumption; the digital temperature sensor circuit is outputted by the digital modulation signal to improve the measurement accuracy; at the same time, the internal temperature of the chip is directly measured, and the temperature value is quantized into a binary code to facilitate the processing of the digital processing circuit and the computer, and the expansion Its scope of application.
  • FIG. 1 shows a circuit diagram of a digital temperature sensor provided by the present invention
  • FIG. 2 is a waveform diagram of a digital temperature sensor circuit diagram for measuring a low temperature when the present invention is provided;
  • FIG. 3 is a waveform diagram of a digital temperature sensor circuit diagram for measuring a high temperature when the present invention is provided;
  • FIG. 4 is a circuit diagram showing the circuit implementation of the comparator of FIG. 1 for the present invention.
  • FIG. 1 is a circuit diagram of a digital temperature sensor according to the present invention, including:
  • a PTAT current source for generating a PTAT current proportional to absolute temperature
  • the anode of the PTAT current source is connected to the power supply voltage, and the cathode thereof is connected to the input end of the analog-to-digital conversion unit.
  • the PTAT current source I3 is used as a sensitive component for detecting temperature, and the relationship between the current value and temperature can be expressed as follows:
  • I 3 is a current value of the PTAT current source I3
  • k is a proportional constant
  • T is an absolute temperature.
  • the operating temperature range of semiconductor devices is -55 ° C ⁇ 125 ° C, converted to absolute temperature is -215K ⁇ 398K.
  • the PTAT current source and the bandgap reference voltage Vref can improve the design accuracy, and can also be used to realize a high linearity and high precision temperature sensor.
  • a sigma-delta modulation module 2 comprising an integrator 21, an analog to digital conversion unit 22 and a feedback digital to analog conversion unit 23, the integrator 21 for converting the PTAT current into a temperature voltage; the analog to digital conversion unit 22 And comparing the temperature voltage with a bandgap reference voltage to generate a digital modulation signal whose duty ratio is proportional to temperature; the feedback digital-to-analog conversion unit 23 is configured to adjust a voltage control integrator charging and discharging speed input by the analog-to-digital conversion unit ;
  • the integrator 21 is an integrating capacitor C int , and one end of the integrating capacitor C int is respectively connected to an output end of the PTAT current source and an input end of an analog-to-digital conversion unit, and the other end of the integrating capacitor C int Ground.
  • the integration capacitor is used in conjunction with the PTAT current source to integrate the input current to obtain a temperature voltage proportional to the temperature; since the integration capacitor does not require an amplifier, the voltage of the input analog-to-digital conversion unit can be adjusted by the size of the constant current source. Therefore, the entire circuit area and power are reduced.
  • the analog-to-digital conversion unit 22 includes a comparator C, a first flip-flop D1 and a second flip-flop D2.
  • the non-inverting input terminal of the comparator C is connected to the bandgap reference voltage Vref, and the non-inverting input terminal is connected to the integrator 21
  • the output of the positive phase is connected to the first flip-flop D1, the first flip-flop D1 outputs a digital modulation signal D OUT , and the negative-phase output terminal is connected to the second flip-flop D2, and the second flip-flop D2 outputs
  • the feedback digital-to-analog conversion unit 23 is connected to the terminal.
  • the duty ratio of the obtained digital modulation signal Dout is proportional to the measured temperature, and the duty ratio of the digital modulation signal Dout can be used to quantize the temperature. Since different digital modulation signal D out is generated in different temperature cycle, and therefore, as the temperature changes of the modulation period of the digital signal D out is generated also changes.
  • the feedback digital-to-analog conversion unit 23 includes a differential pair composed of a first NMOS transistor N1 and a second NMOS transistor N2 and a first constant current source I1, and a gate of the first NMOS transistor N1 is connected to an output of the second flip-flop D2.
  • the drain is connected to the input end of the PTAT current source I3; the gate of the second NMOS transistor N2 is connected to the non-Q output end of the first flip-flop D1, and the drain thereof is connected to the power supply voltage VCC, the differential pair
  • the source is connected to the anode of the first constant current source I1, and the cathode of the first constant current source I2 is grounded.
  • the first flip-flop D1 and the second flip-flop D2 are both D-type flip-flops, and the control terminals thereof are respectively connected with a clock signal CLK, and the comparator C is preferably a dynamic comparator.
  • the differential digital-to-analog conversion unit 23 can adjust the comparator negative phase terminal voltage to control the integrated capacitor voltage C int charge and discharge speed.
  • the digital filter 3 is configured to quantize the digital modulated signal into a digital signal and output it.
  • the digital filter 3 is a digital low pass filter, and the control end of the digital filter 3 is connected to the clock signal CLK.
  • a digital filter is provided at the output stage of the modulator, and the characteristics of the digital filter are stable with respect to temperature, so that it is not affected by temperature, and high-precision A/D conversion can always be realized.
  • the temperature sensor is integrated in the same chip of the circuit under test, and the PTAT current source is proportional to the temperature, and the digital temperature sensor circuit is outputted by the pulse width modulation PWM method to improve the measurement accuracy;
  • directly measuring the internal temperature of the chip, and converting the temperature value into a binary code facilitates the processing of the digital processing circuit and the computer, and expands its application range.
  • a current adjustment module is further included, which is respectively connected with a PTAT current source and an integrator for adjusting the current in the input integrator.
  • the current regulating module is a second constant current source I2, the positive pole of which is connected to the output end of the PTAT current source, and the negative pole thereof is grounded.
  • I 1 is a constant current source I1 current value
  • I 2 is a constant current source I2 current value
  • FIG. 2 is a circuit diagram of a digital temperature sensor circuit diagram for measuring a low temperature operation, which is detailed as follows:
  • I3-I2 When the temperature is very low, close to the lower limit of the tested temperature, I3-I2 is close to zero, so I3-I2 charges the integrating capacitor C int , and the charging is slow due to the small current. If the initial voltage of the integral capacitor C int is zero, the positive-phase input of the comparator C is connected to a bandgap reference voltage Vref that does not change with temperature. Therefore, the positive-phase output of the comparator C outputs a high level, and the output of the negative-phase output is low. Level.
  • the states of the positive and negative phase outputs of the comparator C are latched by the D-type flip-flops D1 and D2, respectively, resulting in the non-Q output terminal DOUT of the first flip-flop D1 being low level, and its Q output.
  • the terminal is connected to the gate of the second NMOS transistor N2 to a high level, and the second NMOS transistor N2 is turned on so that the current of the first constant current source I1 is directed to the power source VCC.
  • the current I3-I2 charges the capacitor Cint, the capacitor voltage rises slowly, and DOUT remains low until the clock signal reaches the time t1, causing the capacitor voltage to exceed the bandgap reference voltage Vref.
  • the comparator C positive phase output transitions from a high level to a low level, and the negative phase output terminal transitions from a low level to a high level.
  • the states of the positive and negative phase outputs of the comparator C are latched by the D-type flip-flops D1 and D2, respectively, causing the non-Q output DOUT of the first flip-flop D1 to become When it is high, the Q output of the first flip-flop D1 is at a low level, so that the current of the first constant current source I1 is directed to the node A.
  • the capacitor is discharged at a current of I1-(I3-I2).
  • the discharge speed is much faster than the charging speed.
  • the capacitor voltage drops below the bandgap reference voltage Vref, and the comparator C positive phase output transitions from a low level to a high level.
  • the negative phase output transitions from a high level to a low level.
  • the states of the positive and negative phase outputs of the comparator C are latched by the D flip-flops D1 and D2, respectively, and DOUT transitions to a low level, the first constant current.
  • the current of source I1 is directed to power supply VCC.
  • DOUT appears as a pulse signal with a small duty cycle (ratio of high-level duration to low-level duration).
  • the partial square wave waveform of the DOUT output in fact, for the 16-bit quantization accuracy, Dout duty can reach 0.002% (the duty cycle shown in the figure is for accurate display, for accurate display).
  • FIG. 3 is a working waveform diagram of a digital temperature sensor circuit diagram for measuring high temperature when the temperature is high, when the temperature is high, the current I3-I2 is close to I1 when the upper limit of the tested temperature is approached.
  • the capacitor Cint is charged with a current of a magnitude close to I1 and discharged with a current of a magnitude close to zero.
  • the capacitor voltage will rise very quickly and the drop will be slow, as shown in Figure 3.
  • Dout behaves as a pulse signal with a high duty cycle. For 16-bit quantization accuracy, the Dout duty cycle can reach 99.998% (the duty cycle shown in the figure is for accurate display).
  • the duty cycle of Dout is proportional to the measured temperature, and the duty cycle of Dout can be used to quantify the temperature. It should be noted here that the Dout cycle is different for different temperatures.
  • the integrating capacitor C int , the comparator C, the class D flip-flops D 1 and D2 and the differential pair circuit of FIG. 1 constitute a modulator (sigma-delta).
  • the output Dout of the modulator is filtered and decimate by the digital filter I7 to obtain low-speed 16-bit binary digital signals D0 to D15.
  • D0 ⁇ D15 are the digital quantized values of the measured temperature signals.
  • the digital filter 3 is preferably a digital low-pass filter, which has the advantages of high precision, high reliability, and easy integration.
  • the algorithm can differentiate the limiting filter, the median filtering, the arithmetic average filtering, the moving average filtering, and the weighting according to the algorithm. Average filtering, low-pass filtering, median-average filtering, etc., are not repeated here.
  • FIG. 4 is a circuit diagram of the circuit implementation of the comparator of FIG. 1 , which is described in detail as follows:
  • the NMOS transistor 179 When the clock signal CLK is low, the NMOS transistor 179 is turned off, the cross-coupled NMOS transistors 177, 178 have no current flowing, and do not operate; the switching PMOS transistor is turned on, the nodes C and D are shorted, and the gates of the cross-coupled PMOS transistors 175, 176 are crossed. The pole and drain are shorted and operate as a diode.
  • the voltage signals SP, SM act on the gates of the differential pair transistors 173 and 172, respectively, and redistribute the current of the tail current source 174: when SP is greater than SM, the current flowing through the NMOS transistor 172 is greater than the current flowing through the NMOS transistor 173. When SM is greater than SP, the current through NMOS transistor 173 is greater than the current flowing through NMOS transistor 172.
  • the clock signal CLK changes from a low level to a high level.
  • the NMOS switching transistor 179 is turned on and the cross-coupled NMOS transistors 177, 178 start operating.
  • the PMOS switch transistor is turned off, the node C and D connections are turned off, and the gate and drain connections of the cross-coupled PMOS transistors 175, 176 are turned off.
  • the voltage signal SP is greater than SM when the rising edge of the clock signal arrives, the current flowing through the transistor 173 is greater than the current flowing through the transistor 172.
  • the voltage at node D will be pulled low and the voltage at node C will be pulled high.
  • the cross-coupled NMOS transistors 177, 178 and the cross-coupled PMOS transistors 175, 176 form a positive feedback. With this positive feedback mechanism, node D is pulled to ground potential GND and node C is quickly pulled to supply voltage VCC.
  • the voltage signal SM is greater than SP when the rising edge of the clock signal arrives, the current flowing through the transistor 172 is greater than the current flowing through the transistor 173.
  • the voltage at node C will be pulled low and the voltage at node D will be pulled high.
  • the cross-coupled NMOS transistors 177, 178 and the cross-coupled PMOS transistors 175, 176 form a positive feedback. With this positive feedback mechanism, node C is pulled to ground potential GND and node D is quickly pulled to supply voltage VCC.
  • the present invention integrates a temperature sensor in the same chip of the circuit under test, and uses a sigma-delta modulation module to modulate the PTAT current to generate a digital modulated signal, wherein the modulation is performed.
  • the integral amplifier is omitted in the module, which greatly reduces the power consumption; the digital temperature sensor circuit is outputted by the digital modulation signal to improve the measurement accuracy; at the same time, the internal temperature of the chip is directly measured, and the temperature value is quantized into a binary code to facilitate the digital processing circuit.
  • the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

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Abstract

数字温度传感器电路，包括：PTAT电流源(1)，用于产生与绝对温度成正比的PTAT电流；sigma-delta调制模块(2)，其包括积分器(21)、模数转换单元(22)与反馈数模转换单元(23)，积分器(21)用于将PTAT电流转化成温度电压；模数转换单元(22)用于将温度电压与带隙基准电压比较生成占空比与温度成正比的数字调制信号；反馈数模转换单元(23)用于调节模数转换单元(22)输入的电压控制积分器(21)充放电速度；数字滤波器(3)，用于将数字调制信号量化为数字信号并输出。Sigma-delta调制模块(2)省略了积分放大器，极大降低了功耗；一方面以数字调制信号方式输出数字温度传感器电路，提高了测量精度；另一方面，直接测量芯片内部温度，将温度值量化转换为二进制编码，扩展其适用范围。

Description

数字温度传感器电路 技术领域
本发明属于集成电路技术领域，特别是涉及一种数字温度传感器电路。
背景技术
随着社会的不断进步，各种精密仪器的不断诞生，使得对于检测精度的要求也随之提高，尤其是对于整个电路系统的温度的监测，致使集成温度传感器在温度检测系统和需要温度保护的集成芯片中应用越来越多，在大功率半导体器件、如，CPU、超高速AD转换器、超高速DA转换器、功率放大器等，都需及时有效检测其芯片工作温度。
然而，传统的做法在芯片背面放置一温度传感器来测温，往往上述方式不能够准确测得芯片内部温度，特别是针对大功率器件，芯片内部温度分布不均衡，存在局部热点，使得测量的温度不能够准确反应电路温度，无法及时有效的保护。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种数字温度传感器电路，用于解决现有技术中数字温度传感器电路因无法准确采集电路温度，导致给予电路及时有效保护的问题。
为实现上述目的及其他相关目的，本发明提供一种数字温度传感器电路，包括：
PTAT电流源，用于产生与绝对温度成正比的PTAT电流；
sigma-delta调制模块，其包括积分器、模数转换单元与反馈数模转换单元，所述积分器用于将所述PTAT电流转化成温度电压；所述模数转换单元用于将所述温度电压与带隙基准电压比较生成占空比与温度成正比的数字调制信号；所述反馈数模转换单元用于调节模数转换单元输入的电压控制积分器充放电速度；
数字滤波器，用于将所述数字调制信号量化为数字信号并输出。
于本发明的一实施例中，所述PTAT电流源的正极连接电源电压，其负极连接模数转换单元的输入端。
于本发明的一实施例中，所述积分器为积分电容，所述积分电容的一端分别连接所述PTAT电流源的输出端和模数转换单元的输入端，所述积分电容的另一端接地。
于本发明的一实施例中，所述模数转换单元包括比较器、第一触发器与第二触发器，所述比较器的正相输入端连接带隙基准电压，其正相输入端连接积分器的输出端，其正相输出 端连接第一触发器，所述第一触发器输出数字调制信号，其负相输出端连接第二触发器，所述第二触发器输出端连接所述反馈数模转换单元。
于本发明的一实施例中，所述比较器为动态比较器。
于本发明的一实施例中，所述反馈数模转换单元包括第一NMOS管与第二NMOS管组成的差分对和第一恒流源，所述第一NMOS管的栅极连接第二触发器的输出端，其漏极连接所述PTAT电流源的输入端；所述第二NMOS管的栅极连接第一触发器的非Q输出端，其漏极连接电源电压，所述差分对的源极连接第一恒流源的正极，所述第一恒流源的负极接地。
于本发明的一实施例中，所述第一触发器与第二触发器均为D类触发器。
于本发明的一实施例中，所述第一、二触发器的控制端和数字滤波器的输入端分别连接时钟信号。
于本发明的一实施例中，还包括：电流调节模块，其分别连接PTAT电流源与积分器，用于调节输入积分器内的电流大小。
于本发明的一实施例中，所述电流调节模块为第二恒流源，其正极连接PTAT电流源，其负极接地。
于本发明的一实施例中，所述数字滤波器为数字低通滤波器。
如上所述，本发明的数字温度传感器电路，具有以下有益效果：
本发明将温度传感器集成在被测电路同一芯片中，利用PTAT电流源与温度之间成正比例关系，采用的sigma-delta调制模块调制PTAT电流，产生数字调制信号，其中，调制模块中省略了积分放大器，极大降低了功耗；以数字调制信号方式输出数字温度传感器电路，提高了测量精度；同时，直接测量芯片内部温度，将温度值量化转换为二进制编码便于数字处理电路与计算机处理，扩展其适用范围。
附图说明
图1显示为本发明提供的一种数字温度传感器电路图；
图2示为本发明提供的一种数字温度传感器电路图测量低温时工作波形图；
图3示为本发明提供的一种数字温度传感器电路图测量高温时工作波形图；
图4显示为本发明提供图1中比较器的电路实施线路图。
元件标号说明：
1          PTAT电流源
2          sigma-delta调制模块
21         积分器
22         模数转换单元
23         反馈数模转换单元
3          数字滤波器
4          电流调节模块
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。需说明的是，在不冲突的情况下，以下实施例及实施例中的特征可以相互组合。
需要说明的是，以下实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。
请参阅图1，为本发明提供的一种数字温度传感器电路图，包括：
PTAT电流源，用于产生与绝对温度成正比的PTAT电流；
具体地，所述PTAT电流源的正极连接电源电压，其负极连接模数转换单元的输入端。
其中，PTAT电流源I3作为敏感元件用于检测温度，其电流值与温度的关系可表示如下：
I3＝kT       (1)
式(1)中，I3为PTAT电流源I3电流值，k为一比例常数，T为绝对温度。一般半导体器件的工作温度范围-55℃～125℃，换算成绝对温度就是-215K～398K。
具体地，采用PTAT电流源与带隙基准电压Vref可提高设计精度，同时，也能用来实现高线性度与高精度的温度传感器。
sigma-delta调制模块2，其包括积分器21、模数转换单元22与反馈数模转换单元23，所述积分器21用于将所述PTAT电流转化成温度电压；所述模数转换单元22用于将所述温度电压与带隙基准电压比较生成占空比与温度成正比的数字调制信号；所述反馈数模转换单元23用于调节模数转换单元输入的电压控制积分器充放电速度；
具体地，所述积分器21为积分电容Cint，所述积分电容Cint的一端分别连接所述PTAT 电流源的输出端和模数转换单元的输入端，所述积分电容Cint的另一端接地。
其中，使用该积分电容配合PTAT电流源对输入电流做积分运算，得到与温度成正比的温度电压；由于该积分电容无需放大器，通过恒流源的大小即可调节输入模数转换单元的电压大小，因此，减小了整个电路面积与功率。
所述模数转换单元22包括比较器C、第一触发器D1与第二触发器D2，所述比较器C的正相输入端连接带隙基准电压Vref，其正相输入端连接积分器21的输出端，其正相输出端连接第一触发器D1，所述第一触发器D1输出数字调制信号DOUT，其负相输出端连接第二触发器D2，所述第二触发器D2输出端连接所述反馈数模转换单元23。
其中，所得的数字调制信号Dout的占空比与被测温度成正比，可采用数字调制信号Dout的占空比来量化温度。由于不同的温度产生的数字调制信号Dout的周期不同，因此，随着温度的变化所产生数字调制信号Dout的周期也随之变化。
所述反馈数模转换单元23包括第一NMOS管N1与第二NMOS管N2组成的差分对和第一恒流源I1，所述第一NMOS管N1的栅极连接第二触发器D2的输出端，其漏极连接所述PTAT电流源I3的输入端；所述第二NMOS管N2的栅极连接第一触发器D1的非Q输出端，其漏极连接电源电压VCC，所述差分对的源极连接第一恒流源I1的正极，所述第一恒流源I2的负极接地。
所述第一触发器D1与第二触发器D2均为D类触发器，且其控制端分别连接时钟信号CLK，所述比较器C优选为动态比较器。差分数模转换单元23可调节比较器负相端电压控制积分电容电压Cint充放电速度。
数字滤波器3，用于将所述数字调制信号量化为数字信号并输出。
具体地，所述数字滤波器3为数字低通滤波器，数字滤波器3的控制端连接时钟信号CLK。例如在调制器的输出级设有数字滤波器，数字滤波器的特性相对于温度稳定，所以，不会受温度影响，能够始终实现高精度的A/D转换。
本实施例中，本发明将温度传感器集成在被测电路同一芯片中，利用PTAT电流源与温度之间成正比例关系，一方面以脉宽调制PWM方式输出数字温度传感器电路，提高了测量精度；另一方面，直接测量芯片内部温度，将温度值量化转换为二进制编码便于数字处理电路与计算机处理，扩展其适用范围。
在上述数字温度传感器电路的基础上，还包括电流调节模块，其分别连接PTAT电流源与积分器，用于调节输入积分器内的电流大小。所述电流调节模块为第二恒流源I2，其正极连接PTAT电流源的输出端，其负极接地。为了充分利用量化电路的量化量程，我们引入不 随温度变化的恒定电流源I2，使得在检测温度范围内有：
0＜I3-I2＜I1                       (2)
式(2)中，I1为恒定电流源I1电流值，I2为恒定电流源I2电流值。
请参阅图2，为本发明提供的一种数字温度传感器电路图测量低温时工作波形图，详述如下：
当温度很低时，接近所测试温度下限时，I3-I2接近零，这样I3-I2对积分电容Cint充电，由于电流小其充电缓慢。如果积分电容Cint初始电压为零，比较器C正相输入端连接一不随温度变化的带隙基准电压Vref，因此，比较器C正相输出端输出高电平，其负相输出端输出低电平。当时钟信号上升沿到来时，比较器C正、负相输出端的状态分别被D类触发器D1和D2锁存，导致第一触发器D1的非Q输出端DOUT为低电平，其Q输出端连接第二NMOS管N2的栅极为高电平，导通第二NMOS管N2使得第一恒流源I1的电流被导向电源VCC。时钟信号在接下来的若干时钟周期内，电流I3-I2都对电容Cint充电，电容电压缓慢上升，DOUT一直保持为低电平，直到时钟信号到达时刻t1，致使电容电压超过带隙基准电压Vref，比较器C正相输出端从高电平转变为低电平，负相输出端从低电平转变为高电平。在接下来的时钟上升沿，如图2中时刻t2，比较器C正、负相输出端的状态分别被D类触发器D1和D2锁存，导致第一触发器D1的非Q输出端DOUT变为高电平，导致第一触发器D1的Q输出端为低电平，致使第一恒流源I1的电流被导向节点A。电容以I1-(I3-I2)电流大小放电。由于电流I3-I2接近零，大流I1-(I3-I2)近似等于I1。如图2，相比于充电速度，放电速度快很多，在一个时钟周期内，电容电压就下降到带隙基准电压Vref以下，比较器C正相输出端从低电平转变为高电平，负相输出端由高电平转变为低电平。当接下来的时钟上升沿到来时，在时钟信号时刻t3所示，比较器C正、负相输出端的状态分别被D触发器D1、D2锁存，DOUT转变为低电平，第一恒流源I1的电流被导向电源VCC。在接下来的若干时钟周期内，电流I3-I2持续对电容Cint充电，电容电压缓慢上升，DOUT保持为低电平。当电路稳定后，DOUT呈现为一占空比(高电平持续时间与低电平持续时间之比)很小的一脉冲信号。如图2所示，DOUT输出的部分方波波形图，实际上对于16位的量化精度，Dout占空比可达到0.002％(图中显示的占空比为了便于表示，为精确显示)。
同理，请参阅图3，为本发明提供的一种数字温度传感器电路图测量高温时工作波形图，详述如下：当温度很高时，接近所测试温度上限时，电流I3-I2接近I1。电容Cint以大小接近I1的电流充电，以大小接近零的电流放电。电容电压将上升很快，下降很慢，如图3所示， Dout表现为一占空比很高的脉冲信号，对16位的量化精度，Dout占空比可达99.998％(图中显示的占空比为了便于表示，为精确显示)。
综上所述，Dout的占空比与被测温度成正比，可用Dout的占空比来量化温度。这里要注意，对于不同的温度，Dout的周期不一样。实际上图1中的积分电容Cint、比较器C、D类触发器D 1和D2和差分对电路构成了一调制器(sigma-delta)。调制器的输出Dout经过数字滤波器I7滤波(filter)和抽取(decimation)后得到低速的16位二进制数字信号D0～D15。D0～D15便为所测温度信号的数字量化值。
其中，数字滤波器3优选为数字低通滤波器，其具有精度高、可靠性高与易集成的优点，按算法可分化限幅滤波、中位值滤波、算术平均滤波、移动平均滤波、加权平均滤波、低通滤波、中位值平均滤波等，在此不一一赘述。
请参阅图4，为本发明提供为图1中比较器的电路实施线路图，详述如下：
当时钟信号CLK为低电平时，NMOS晶体管179截止，交叉耦合NMOS晶体管177、178无电流流过，不工作；开关PMOS晶体管开启，节点C和D短接，交叉耦合PMOS晶体管175、176的栅极、漏极短接，作为二极管工作。
电压信号SP、SM分别作用于差分对晶体管173与172的栅极，把尾电流源174的电流重新再分配：当SP大于SM时，流过NMOS晶体管172的电流大于流过NMOS晶体管173的电流；当SM大于SP时，通过NMOS晶体管173的电流大于流过NMOS晶体管172的电流。
当时钟信号CLK的上升沿到来，时钟信号CLK从低电平变为高电平。NMOS开关晶体管179开启，交叉耦合NMOS晶体管177、178开始工作。同时，PMOS开关晶体管截止，节点C和D连接被断开，交叉耦合PMOS晶体管175、176的栅极、漏极连接被断开。
如果在时钟信号上升沿到来时，电压信号SP大于SM，流过晶体管173的电流大于流过晶体管172的电流。节点C、D间的连接被断开后，节点D的电压将被拉低，节点C的电压将被拉高。交叉耦合NMOS晶体管177、178与交叉耦合PMOS晶体管175、176构成一正反馈，通过这一正反馈机构，节点D被速度拉至地电位GND，节点C被迅速拉至电源电压VCC。
如果在时钟信号上升沿到来时，电压信号SM大于SP，流过晶体管172的电流大于流过晶体管173的电流。节点C、D间的连接被断开后，节点C的电压将被拉低，节点D的电压将被拉高。交叉耦合NMOS晶体管177、178与交叉耦合PMOS晶体管175、176构成一正反馈，通过这一正反馈机构，节点C被速度拉至地电位GND，节点D被迅速拉至电源电压VCC。
PTAT电流源I3、恒定电流源I1和I2、和带隙基准电压Vref生产电路的设计请参考带隙 基准电路相关书箱文献，在此不一一赘述。
综上所述，本发明将温度传感器集成在被测电路同一芯片中，利用PTAT电流源与温度之间成正比例关系，采用的sigma-delta调制模块调制PTAT电流，产生数字调制信号，其中，调制模块中省略了积分放大器，极大降低了功耗；以数字调制信号方式输出数字温度传感器电路，提高了测量精度；同时，直接测量芯片内部温度，将温度值量化转换为二进制编码便于数字处理电路与计算机处理，扩展其适用范围。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (10)

  1. 一种数字温度传感器电路，其特征在于，包括：
    PTAT电流源，用于产生与绝对温度成正比的PTAT电流；
    sigma-delta调制模块，其包括积分器、模数转换单元与反馈数模转换单元，所述积分器用于将所述PTAT电流转化成温度电压；所述模数转换单元用于将所述温度电压与带隙基准电压比较生成占空比与温度成正比的数字调制信号；所述反馈数模转换单元用于调节模数转换单元输入的电压控制积分器充放电速度；
    数字滤波器，用于将所述数字调制信号量化为数字信号并输出。
  2. 根据权利要求1所述的数字温度传感器电路，其特征在于，所述PTAT电流源的正极连接电源电压，其负极连接模数转换单元的输入端。
  3. 根据权利要求1所述的数字温度传感器电路，其特征在于，所述积分器为积分电容，所述积分电容的一端分别连接所述PTAT电流源的输出端和模数转换单元的输入端，所述积分电容的另一端接地。
  4. 根据权利要求1所述的数字温度传感器电路，其特征在于，所述模数转换单元包括比较器、第一触发器与第二触发器，所述比较器的正相输入端连接带隙基准电压，其正相输入端连接积分器的输出端，其正相输出端连接第一触发器，所述第一触发器输出数字调制信号，其负相输出端连接第二触发器，所述第二触发器输出端连接所述反馈数模转换单元。
  5. 根据权利要求4所述的数字温度传感器电路，其特征在于，所述反馈数模转换单元包括第一NMOS管与第二NMOS管组成的差分对和第一恒流源，所述第一NMOS管的栅极连接第二触发器的输出端，其漏极连接所述PTAT电流源的输入端；所述第二NMOS管的栅极连接第一触发器的非Q输出端，其漏极连接电源电压，所述差分对的源极连接第一恒流源的正极，所述第一恒流源的负极接地。
  6. 根据权利要求4或5所述的数字温度传感器电路，其特征在于，所述第一触发器与第二触发器均为D类触发器。
  7. 根据权利要求4或5所述的数字温度传感器电路，其特征在于，所述第一、二触发器的控 制端和数字滤波器的输入端分别连接时钟信号。
  8. 根据权利要求1所述的数字温度传感器电路，其特征在于，还包括：电流调节模块，其分别连接PTAT电流源与积分器，用于调节输入积分器内的电流大小。
  9. 根据权利要求8所述的数字温度传感器电路，其特征在于，所述电流调节模块为第二恒流源，其正极连接PTAT电流源，其负极接地。
  10. 根据权利要求1所述的数字温度传感器电路，其特征在于，所述数字滤波器为数字低通滤波器。
PCT/CN2017/101203 2017-08-03 2017-09-11 数字温度传感器电路 WO2019024176A1 (zh)

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