WO2019019236A1 - Oled背板的制作方法与oled面板的制作方法 - Google Patents

Oled背板的制作方法与oled面板的制作方法 Download PDF

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WO2019019236A1
WO2019019236A1 PCT/CN2017/098175 CN2017098175W WO2019019236A1 WO 2019019236 A1 WO2019019236 A1 WO 2019019236A1 CN 2017098175 W CN2017098175 W CN 2017098175W WO 2019019236 A1 WO2019019236 A1 WO 2019019236A1
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layer
oled
photoresist
pixel
pixel defining
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French (fr)
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李松杉
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/570,382 priority Critical patent/US10153333B1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating an OLED backplane and a method for fabricating the OLED panel.
  • OLED displays have self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, wide viewing angle, wide temperature range, flexible display and large area Color display and many other advantages, recognized by the industry as the most promising display device.
  • the OLED has an anode, an organic functional layer, and a cathode which are sequentially formed on a substrate.
  • each functional material layer and cathode metal layer film of the OLED are prepared by a vacuum thermal evaporation process, that is, the organic small molecular material is heated in a vacuum chamber to be sublimated or melted into a material vapor, and passed through a metal mask (Mask). The opening is deposited on the glass substrate.
  • a vacuum thermal evaporation process that is, the organic small molecular material is heated in a vacuum chamber to be sublimated or melted into a material vapor, and passed through a metal mask (Mask).
  • Mosk metal mask
  • IJP Ink-jet Print
  • IJP technology has the advantages of high material utilization rate and is the key technology to solve the cost problem of large-size OLED display.
  • IJP technology is compared with traditional vacuum evaporation in the preparation of OLED device luminescent layer.
  • the process has many advantages such as saving materials, mild process conditions, and more uniform film formation, so it has more application potential.
  • a plurality of nozzles are used to drop the functional material ink into a predetermined pixel area, and the solvent is evaporated to form a desired pattern.
  • a pixel definition layer (PDL) layer needs to be prepared on the anode before inkjet printing.
  • the upper surface of the PDL layer we need the upper surface of the PDL layer to be hydrophobic, so that the ink liquid of the OLED material is dissolved.
  • the droplet can easily flow into the pixel groove defined by the PDL layer and does not remain on the upper surface of the PDL layer; on the other hand, we hope that the side surface of the PDL layer is hydrophilic, so that the droplet can be well Uniform spreading in the pixel groove does not create an excessive contact angle on the side to make the film thickness thin.
  • the PDL layer in the conventional OLED backplane is fabricated by coating, exposing, developing, and baking the organic photoresist material on the TFT substrate 100 with the ITO (indium tin oxide) anode 210 as shown in FIG.
  • the PDL layer 300 is obtained.
  • the obtained PDL layer 300 may be in a state in which the upper surface is hydrophobic and the side surface is hydrophilic; however, as shown in FIG. 2, the subsequent removal of ITO
  • the residual organic photoresist on the anode 210 is subjected to a full-face O 2 plasma treatment step which causes all surfaces (upper surface and side surface) exposed by the PDL layer 300 to be exposed.
  • the contact angle is ⁇ 40 degrees, which does not meet the process requirements of the IJP process for the hydrophilicity of the hydrophobic side surface of the upper surface of the PDL layer 300, and thus affects the subsequent IJP process.
  • the object of the present invention is to provide a method for fabricating an OLED backsheet, which can remove the residual photoresist on the electrode layer while maintaining the hydrophilic property of the hydrophobic side surface of the pixel defining layer, thereby facilitating the inkjet printing process.
  • OLED device can remove the residual photoresist on the electrode layer while maintaining the hydrophilic property of the hydrophobic side surface of the pixel defining layer, thereby facilitating the inkjet printing process.
  • the object of the present invention is to provide a method for fabricating an OLED panel.
  • the OLED back sheet is fabricated by using the method for fabricating the OLED back sheet, and the residual photoresist on the electrode layer is removed and a pixel defining layer having a hydrophilic surface on the upper surface is obtained.
  • the organic functional layer is formed by inkjet printing, the process is simple, and the performance of the fabricated OLED device is more stable.
  • the present invention provides a method for fabricating an OLED backplane, comprising the following steps:
  • Step S1 providing a TFT substrate, depositing and patterning an electrode layer on the TFT substrate, coating an organic photoresist material on the electrode layer and the TFT substrate, and exposing the organic photoresist material to the layer
  • a pixel defining layer is provided, the pixel defining layer is provided with a pixel opening above the electrode layer, and the pixel defining layer has a side surface and an upper surface, and the pixel defining layer The side surface is hydrophilic, the upper surface of the pixel defining layer is hydrophobic, and the electrode layer has residual photoresist on the upper surface;
  • Step S2 coating a layer of a common photoresist material on the pixel defining layer, and patterning it by a yellow light process, forming a protective photoresist layer on the pixel defining layer to The upper surface of the layer is defined to be protected, and the protective photoresist layer is provided with a through opening corresponding to the pixel opening of the pixel defining layer, and the through opening completely exposes the corresponding pixel opening;
  • Step S3 applying oxygen plasma to the entire surface of the TFT substrate, and performing oxygen plasma treatment on the electrode layer to remove residual photoresist on the upper surface thereof, in the process, covered by the protective photoresist layer.
  • the upper surface of the pixel defining layer is not affected by the oxygen plasma and is still hydrophobic;
  • Step S4 Removing the protective photoresist layer on the pixel defining layer to obtain an OLED backplane.
  • the edge of the through-opening on the protective photoresist layer is outwardly extended by 0-3 micrometers with respect to the edge of the corresponding pixel opening, thereby completely exposing the corresponding pixel opening.
  • the organic photoresist material is exposed by using a first mask plate having a first pattern for forming a pixel opening.
  • the specific process of forming the protective photoresist layer by patterning a yellow light process in the step S2 is: after coating a common photoresist material on the pixel defining layer, providing a second mask, the first The second mask has a second pattern for forming a through opening, and the common photoresist material is exposed by the second mask, and then the exposed common photoresist material is developed and baked to be protected. Photoresist layer.
  • the shape of the second graphic corresponds to the shape of the first graphic, and the distance from the edge of the second graphic to the center point is 1-3 ⁇ m larger than the distance from the corresponding edge to the center point on the first graphic.
  • the organic photoresist material coated in the step S1 contains acryl.
  • the material of the electrode layer formed in the step S1 is indium tin oxide.
  • the electrode layer is used to form an OLED device that serves as the anode or cathode of the OLED device.
  • the present invention also provides a method for fabricating an OLED panel, comprising the steps of: fabricating an OLED backplane according to the method for fabricating the OLED backplane described above, and forming an organic layer in the pixel opening of the OLED backplane by inkjet printing.
  • the functional layer is a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, or an electron injection layer of the OLED device.
  • the invention also provides a method for manufacturing an OLED backplane, comprising the following steps:
  • Step S1 providing a TFT substrate, depositing and patterning an electrode layer on the TFT substrate, coating an organic photoresist material on the electrode layer and the TFT substrate, and exposing the organic photoresist material to the layer
  • a pixel defining layer is provided, the pixel defining layer is provided with a pixel opening above the electrode layer, and the pixel defining layer has a side surface and an upper surface, and the pixel defining layer The side surface is hydrophilic, the upper surface of the pixel defining layer is hydrophobic, and the electrode layer has residual photoresist on the upper surface;
  • Step S2 coating a layer of a common photoresist material on the pixel defining layer, and patterning it by a yellow light process, forming a protective photoresist layer on the pixel defining layer to The upper surface of the layer is defined to be protected, and the protective photoresist layer is provided with a through opening corresponding to the pixel opening of the pixel defining layer, and the through opening completely exposes the corresponding pixel opening;
  • Step S3 applying oxygen plasma to the entire surface of the TFT substrate, performing oxygen plasma treatment on the electrode layer to remove residual photoresist on the upper surface thereof, in the process, the pixel covered by the protective photoresist layer
  • the upper surface of the defined layer is not affected by the oxygen plasma and is still hydrophobic;
  • Step S4 removing the protective photoresist layer on the pixel defining layer to obtain an OLED backplane
  • the edge of the through-opening of the protective photoresist layer is outwardly extended by 0-3 micrometers with respect to the edge of the corresponding pixel opening, thereby completely exposing the corresponding pixel opening;
  • the organic photoresist material is exposed by using a first mask plate having a first pattern for forming a pixel opening
  • the specific process of forming the protective photoresist layer by patterning a yellow light process in the step S2 is: after coating a common photoresist material on the pixel definition layer, providing a second mask.
  • the second mask has a second pattern for forming a through opening, and the common photoresist material is exposed by the second mask, and then the exposed common photoresist material is developed and baked. Obtaining a protective photoresist layer;
  • the shape of the second graphic corresponds to the shape of the first graphic, and the distance from the edge of the second graphic to the center point is 1-3 ⁇ m larger than the distance from the corresponding edge of the first graphic to the center point. .
  • the present invention provides a method for fabricating an OLED back sheet, which is formed on a pixel defining layer that is hydrophilic on the hydrophobic side surface of the upper surface before the electrode layer is subjected to oxygen plasma treatment to remove residual photoresist. a resist layer, so that during the oxygen plasma treatment, the upper surface of the pixel defining layer covered by the protective photoresist layer is not affected by the oxygen plasma, and is still hydrophobic, thereby leaving the photoresist on the removed electrode layer.
  • the hydrophilic nature of the hydrophobic side surface of the pixel defining layer can be maintained, thereby facilitating the fabrication of the OLED device by the inkjet printing process.
  • the OLED back sheet is fabricated by using the above method for fabricating the OLED back sheet, the residual photoresist on the electrode layer is removed, and a pixel defining layer hydrophilic on the hydrophobic side surface of the upper surface is obtained, and then printed by inkjet printing.
  • the method forms an organic functional layer, the process is simple, and the manufactured OLED device has more stable performance and long service life.
  • FIG. 1 is a schematic diagram of forming a PDL layer in a method of fabricating a conventional OLED backplane
  • FIG. 2 is a schematic view showing oxygen plasma treatment of the ITO anode shown in FIG. 1;
  • FIG. 3 is a flow chart of a method of fabricating an OLED backplane of the present invention.
  • step S1 is a schematic diagram of step S1 of the method for fabricating an OLED backplane of the present invention
  • step S2 is a schematic diagram of step S2 of the method for fabricating an OLED backplane of the present invention
  • step S3 is a schematic diagram of step S3 of the method for fabricating an OLED backplane according to the present invention.
  • FIG. 7 is a schematic diagram of step S4 of the method for fabricating an OLED backplane of the present invention.
  • the present invention first provides a method for fabricating an OLED backplane, including the following steps:
  • Step S1 as shown in FIG. 4, a TFT substrate 10 is provided, an electrode layer 21 is deposited and patterned on the TFT substrate 10, and an organic photoresist material is coated on the electrode layer 21 and the TFT substrate 10.
  • a pixel defining layer 30 is provided.
  • the pixel defining layer 30 is provided with a pixel opening 35 corresponding to the electrode layer 21, and the pixel defining layer 30 has a side surface and an upper surface, at which time the side surface of the pixel defining layer 30 has hydrophilicity, the upper surface of the pixel defining layer 30 has hydrophobicity, and the pixel defining layer 30 is exposed by the electrode layer 21 There is a residual photoresist 95 on the upper surface.
  • the degree of hydrophobicity in the present invention is evaluated by measuring the water contact angle of the surface. If the contact angle of the surface with water is greater than 90°, it is hydrophobic, and if the measured surface has a contact angle with water of less than 40, ° is hydrophilic.
  • the upper surface of the pixel defining layer 30 has hydrophobicity, and more specifically, the water contact angle of the upper surface is greater than 90°, and thus the upper surface of the pixel defining layer 30 is also considered.
  • the side surface of the pixel defining layer 30 has hydrophilicity, more specifically, the water contact angle of the side surface is greater than 5° and less than 40°, and thus the side surface of the pixel defining layer 30 is also considered It is hydrophilic.
  • the surface of the electrode layer 21 is also hydrophilic and more hydrophilic than the side surface of the pixel defining layer 30, and more specifically, the surface of the electrode layer 21 has a water contact angle of less than 5°.
  • the organic photoresist material coated in the step S1 is a special photoresist material widely used in the industry, and the obtained pixel defining layer is obtained after a series of exposure, development and baking steps of the yellow light process.
  • 30 will have the hydrophobic nature of the hydrophilic surface on the side surface, and the side surface and the upper surface will be hydrophilic when subjected to oxygen plasma.
  • the organic photoresist material usually contains acrylic.
  • the organic photoresist material is exposed by using the first mask 81, and the first mask 81 has a first pattern 811 for forming the pixel opening 35.
  • the material of the electrode layer 21 formed in the step S1 is indium tin oxide.
  • Step S2 as shown in FIG. 5, a layer of a common photoresist material is coated on the pixel defining layer 30, and patterned by a yellow light process to form a protective layer on the pixel defining layer 30.
  • the photoresist layer 40 is protected to protect the upper surface of the pixel defining layer 30.
  • the protective photoresist layer 40 is provided with a through opening 45 corresponding to the pixel opening 35 of the pixel defining layer 30. The opening 45 completely exposes the corresponding pixel opening 35, that is, the side surface of the pixel defining layer 30 is exposed.
  • the through-opening 45 of the protective photoresist layer 40 can completely expose the corresponding pixel opening 35, and the protective photoresist layer 40 can completely cover the pixel defining layer 30.
  • the edges of the corresponding pixel openings 35 are outwardly expanded by 0-3 microns to completely expose the corresponding pixel openings 35.
  • the specific process of forming the protective photoresist layer 40 by a yellow light process in the step S2 is: after coating a common photoresist material on the pixel defining layer 30, providing a second mask 82.
  • the second mask 82 has a second pattern 821 for forming a through opening 45.
  • the second mask 82 is used to expose the layer of the common photoresist material, and then the exposed common photoresist material is exposed. Development and baking are performed to obtain a protective photoresist layer 40.
  • the shape of the second graphic 821 corresponds to the shape of the first graphic 811, and the distance from the edge of the second graphic 821 to the center point is larger than the distance from the corresponding edge of the first graphic 811 to the center point. 1-3 ⁇ m.
  • Step S3 oxygen plasma is applied to the entire surface of the TFT substrate 10, and the electrode layer 21 is subjected to an oxygen plasma treatment to remove the residual photoresist 95 on the upper surface thereof.
  • the upper surface of the pixel defining layer 30 covered by the protective photoresist layer 40 is not affected by the oxygen plasma and is still hydrophobic.
  • the uncovered surface of the pixel defining layer 30 is both hydrophilic under the influence of oxygen plasma, that is, the side surface of the pixel defining layer 30 remains hydrophilic. Further, the water contact angle of the side surface is greater than 5° and less than 40°, and the portion of the upper surface of the pixel defining layer 30 that is not covered by the protective photoresist layer 40 is changed to have an influence of oxygen plasma. Hydrophilic, further, the water contact angle of the portion is greater than 5° and less than 40°.
  • Step S4 as shown in FIG. 7, the protective photoresist layer 40 on the pixel defining layer 30 is removed to obtain the OLED backplane 1.
  • the electrode layer 21 is used to constitute an OLED device, and the electrode layer 21 functions as an anode or a cathode of an OLED device.
  • the protective photoresist layer 40 is formed on the pixel defining layer 30 which is hydrophilic on the hydrophobic side surface of the upper surface, thereby Covered by the protective photoresist layer 40 during oxygen plasma treatment
  • the upper surface of the pixel defining layer 30 is not affected by the oxygen plasma, and is still hydrophobic, so that the residual photoresist 95 is removed on the electrode layer 21 while maintaining the hydrophilic surface of the upper surface of the pixel defining layer 30.
  • the nature of the OLED device is facilitated by subsequent inkjet printing processes.
  • the present invention further provides a method for fabricating an OLED panel, comprising the steps of: fabricating an OLED backsheet 1 according to the method for fabricating the OLED backplane, and removing the residual on the electrode layer 21
  • the photoresist 95 and the pixel defining layer 30 having a hydrophilic surface on the upper surface of the upper surface are obtained.
  • the specific fabrication process will not be described herein; then, the organic function is formed in the pixel opening 35 of the pixel defining layer 30 by inkjet printing.
  • the organic functional layer may be configured as a hole injection layer (HIL), a hole transport layer (HTL), an emissive layer (EL), an electron transport layer (Electron transport layer) , ETL), or Electron injection layer (EIL).
  • HIL hole injection layer
  • HTL hole transport layer
  • EL emissive layer
  • ETL electron transport layer
  • EIL Electron injection layer
  • the present invention provides a method for fabricating an OLED backsheet.
  • a protective photoresist is formed on the pixel defining layer that is hydrophilic on the hydrophobic side surface of the upper surface. a layer such that during the oxygen plasma treatment, the upper surface of the pixel defining layer covered by the protective photoresist layer is not affected by the oxygen plasma, and is still hydrophobic, thereby removing the photoresist on the electrode layer while removing Moreover, the hydrophilic nature of the hydrophobic side surface of the surface of the pixel defining layer can be maintained, thereby facilitating the fabrication of the OLED device by the inkjet printing process.
  • the OLED back sheet is fabricated by using the above method for fabricating the OLED back sheet, the residual photoresist on the electrode layer is removed, and a pixel defining layer hydrophilic on the hydrophobic side surface of the upper surface is obtained, and then printed by inkjet printing.
  • the method forms an organic functional layer, the process is simple, and the manufactured OLED device has more stable performance and long service life.

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Abstract

一种OLED背板（1）的制作方法与OLED面板的制作方法。OLED背板（1）的制作方法，在对电极层（21）进行氧等离子处理以去除残留光阻（95）之前，在上表面疏水侧表面亲水的像素定义层（30）上制作保护光阻层（40），从而在进行氧等离子处理过程中，被保护光阻层（40）所覆盖的像素定义层（30）的上表面不会受到氧等离子体的影响，仍然具有疏水性，从而在去除电极层（21）上残留光阻（95）的同时，又能保持像素定义层（30）上表面疏水侧表面亲水的性质，进而便于采用喷墨打印工艺制作OLED器件。

Description

OLED背板的制作方法与OLED面板的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED背板的制作方法与OLED面板的制作方法。
背景技术
有机发光二极管(Organic Light Emitting Diodes，OLED)显示器具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、宽视角、使用温度范围广，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED具有依次形成于基板上的阳极、有机功能层和阴极。目前，OLED各功能材料层与阴极金属层薄膜均通过真空热蒸镀工艺制备，即在真空腔体内加热有机小分子材料，使其升华或者熔融气化成材料蒸汽，透过金属掩膜板(Mask)的开孔沉积在玻璃基板上。但由于真空热蒸发制备成本高，限制了OLED显示器的大范围商业化。
喷墨打印(Ink-jet Print，IJP)技术具有材料利用率高等优点，是解决大尺寸OLED显示器成本问题的关键技术，IJP技术在OLED器件发光层的制备中，相比于传统的真空蒸镀工艺，具有节省材料、制程条件温和、成膜更均匀等诸多优点，所以更具应用潜力。此方法是利用多个喷嘴将功能材料墨水滴入预定的像素区域，待溶剂挥发后形成所需图案。
为定义出OLED显示的像素区域，喷墨打印前需要在阳极上制备像素定义(pixel defined layer，PDL)层，通常来说，我们需要PDL层的上表面疏水，这样溶解有OLED材料的墨水液滴能够很容易流进PDL层所限定出的像素凹槽内，不会残留在PDL层的上表面；另一方面我们希望PDL层的侧表面是亲水的，这样液滴能够很好的在像素凹槽内均匀铺展开，不会在侧面产生过大的接触角(contact angle)使膜厚较薄。
传统的OLED背板中PDL层的制作方式为，如图1所示，在带有ITO(氧化铟锡)阳极210的TFT基板100上进行有机光阻材料的涂布、曝光、显影、烘烤，得到PDL层300，此时，由于该有机光阻材料本身的性质，所得到的PDL层300会出现上表面疏水而侧表面亲水的状况；但是，如图2所示，后续为去除ITO阳极210上残留的有机光阻(residue)，会再进行整面性的氧等离子处理(O2 plasma treatment)步骤，该过程会使PDL层300 所露出的所有表面(上表面和侧表面)都变为亲水特性，接触角<40度，那么这就不符合IJP制程对PDL层300上表面疏水侧表面亲水的工艺要求，进而便会影响后续IJP制程的进行。
发明内容
本发明的目的在于提供一种OLED背板的制作方法，在去除电极层上残留光阻的同时，又能保持像素定义层上表面疏水侧表面亲水的性质，从而便于采用喷墨打印工艺制作OLED器件。
本发明的目的还在于提供一种OLED面板的制作方法，采用上述OLED背板的制作方法制作OLED背板，去除电极层上的残留光阻并得到上表面疏水侧表面亲水的像素定义层，然后通过喷墨打印的方式形成有机功能层，工艺简单，所制作的OLED器件性能更加稳定。
为实现上述目的，本发明提供了一种OLED背板的制作方法，包括以下步骤：
步骤S1、提供一TFT基板，在所述TFT基板上沉积并图案化形成电极层，在所述电极层及TFT基板上涂布一层有机光阻材料，对该层有机光阻材料进行曝光、显影及烘烤后，得到像素定义层，所述像素定义层在对应于所述电极层的上方设有像素开口，所述像素定义层具有侧表面和上表面，此时所述像素定义层的侧表面具有亲水性，所述像素定义层的上表面具有疏水性，所述电极层的上表面上具有残留光阻；
步骤S2、在所述像素定义层上涂布一层普通光阻材料，并通过一道黄光制程对其进行图案化处理，在所述像素定义层上形成保护光阻层，以对所述像素定义层的上表面进行保护，所述保护光阻层对应于所述像素定义层的像素开口的上方设有贯穿开口，所述贯穿开口完全露出相对应的像素开口；
步骤S3、在所述TFT基板上方整面施加氧等离子体，对所述电极层进行氧等离子体处理，去除其上表面上的残留光阻，在该过程中，被保护光阻层所覆盖的像素定义层的上表面未受到氧等离子体的影响，仍然具有疏水性；
步骤S4、去除像素定义层上的保护光阻层，得到OLED背板。
所述步骤S2中，所述保护光阻层上贯穿开口的边缘相对于所对应的像素开口的边缘向外扩张0-3微米，从而完全露出所对应的像素开口。
所述步骤S1中，通过利用第一掩膜板对有机光阻材料曝光，该第一掩膜板上具有用于形成像素开口的第一图形。
所述步骤S2中通过一道黄光制程图案化形成所述保护光阻层的具体过程为：在所述像素定义层上涂布一层普通光阻材料后，提供第二掩膜板，该第二掩膜板上具有用于形成贯穿开口的第二图形，利用该第二掩膜板对该层普通光阻材料进行曝光，然后对曝光后的普通光阻材料进行显影、烘烤，得到保护光阻层。
所述第二图形的形状与所述第一图形的形状相对应，所述第二图形的边缘到中心点的距离比所述第一图形上相应边缘到中心点的距离大1-3μm。
所述步骤S1中所涂布的有机光阻材料包含亚克力。
所述步骤S1中所形成的电极层的材料为氧化铟锡。
所述电极层用于构成OLED器件，所述电极层用作OLED器件的阳极或阴极。
本发明还提供一种OLED面板的制作方法，包括以下步骤：按照上述的OLED背板的制作方法制得OLED背板，采用喷墨打印的方式在所述OLED背板的的像素开口内形成有机功能层，所述有机功能层为OLED器件的空穴注入层、空穴传输层、发光层、电子传输层、或电子注入层。
本发明还提供一种OLED背板的制作方法，包括以下步骤：
步骤S1、提供一TFT基板，在所述TFT基板上沉积并图案化形成电极层，在所述电极层及TFT基板上涂布一层有机光阻材料，对该层有机光阻材料进行曝光、显影及烘烤后，得到像素定义层，所述像素定义层在对应于所述电极层的上方设有像素开口，所述像素定义层具有侧表面和上表面，此时所述像素定义层的侧表面具有亲水性，所述像素定义层的上表面具有疏水性，所述电极层的上表面上具有残留光阻；
步骤S2、在所述像素定义层上涂布一层普通光阻材料，并通过一道黄光制程对其进行图案化处理，在所述像素定义层上形成保护光阻层，以对所述像素定义层的上表面进行保护，所述保护光阻层对应于所述像素定义层的像素开口的上方设有贯穿开口，所述贯穿开口完全露出相对应的像素开口；
步骤S3、在所述TFT基板上方整面施加氧等离子体，对所述电极层进行氧等离子体处理，去除其上表面上的残留光阻，该过程中，被保护光阻层所覆盖的像素定义层的上表面未受到氧等离子体的影响，仍然具有疏水性；
步骤S4、去除像素定义层上的保护光阻层，得到OLED背板；
其中，所述步骤S2中，所述保护光阻层上贯穿开口的边缘相对于所对应的像素开口的边缘向外扩张0-3微米，从而完全露出所对应的像素开口；
其中，所述步骤S1中，通过利用第一掩膜板对有机光阻材料曝光，该第一掩膜板上具有用于形成像素开口的第一图形；
其中，所述步骤S2中通过一道黄光制程图案化形成所述保护光阻层的具体过程为：在所述像素定义层上涂布一层普通光阻材料后，提供第二掩膜板，该第二掩膜板上具有用于形成贯穿开口的第二图形，利用该第二掩膜板对该层普通光阻材料进行曝光，然后对曝光后的普通光阻材料进行显影、烘烤，得到保护光阻层；
其中，所述第二图形的形状与所述第一图形的形状相对应，所述第二图形的边缘到中心点的距离比所述第一图形上相应边缘到中心点的距离大1-3μm。
本发明的有益效果：本发明提供的一种OLED背板的制作方法，在对电极层进行氧等离子处理以去除残留光阻之前，在上表面疏水侧表面亲水的像素定义层上制作保护光阻层，从而在进行氧等离子处理过程中，被保护光阻层所覆盖的像素定义层的上表面不会受到氧等离子体的影响，仍然具有疏水性，从而在去除电极层上残留光阻的同时，又能保持像素定义层上表面疏水侧表面亲水的性质，进而便于采用喷墨打印工艺制作OLED器件。本发明的OLED面板的制作方法，采用上述OLED背板的制作方法制作OLED背板，去除电极层上的残留光阻并得到上表面疏水侧表面亲水的像素定义层，然后通过喷墨打印的方式形成有机功能层，工艺简单，所制作的OLED器件性能更加稳定，使用寿命较长。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有OLED背板的制作方法中形成PDL层的示意图；
图2为对图1中所示的ITO阳极进行氧等离子处理的示意图；
图3为本发明的OLED背板的制作方法的流程图；
图4为本发明的OLED背板的制作方法的步骤S1的示意图；
图5为本发明的OLED背板的制作方法的步骤S2的示意图；
图6为本发明的OLED背板的制作方法的步骤S3的示意图；
图7为本发明的OLED背板的制作方法的步骤S4的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，本发明首先提供一种OLED背板的制作方法，包括以下步骤：
步骤S1、如图4所示，提供一TFT基板10，在所述TFT基板10上沉积并图案化形成电极层21，在所述电极层21及TFT基板10上涂布一层有机光阻材料，对该层有机光阻材料进行曝光、显影及烘烤后，得到像素定义层30，所述像素定义层30在对应于所述电极层21的上方设有像素开口35，所述像素定义层30具有侧表面和上表面，此时所述像素定义层30的侧表面具有亲水性，所述像素定义层30的上表面具有疏水性，所述像素定义层30所露出的电极层21的上表面上具有残留光阻95。
具体地，本发明中亲疏水程度是通过量测表面的水接触角来评价，若所测表面与水的接触角大于90°便是具有疏水性，若所测表面与水的接触角小于40°便是具有亲水性。
具体地，所述步骤S1中，所述像素定义层30的上表面具有疏水性，更加具体地，该上表面的水接触角大于90°，因此也便认为所述像素定义层30的上表面具有疏水性；而所述像素定义层30的侧表面具有亲水性，更加具体地，该侧表面的水接触角大于5°小于40°，因此也便认为所述像素定义层30的侧表面具有亲水性。具体地，所述电极层21的表面也具有亲水性，且比所述像素定义层30的侧表面更加亲水，更加具体地，所述电极层21的表面的水接触角小于5°。
具体地，所述步骤S1中所涂布的有机光阻材料为业界已广泛使用的特殊光阻材料，其经黄光制程的一系列曝光、显影及烘烤步骤后，所得到的像素定义层30会出现侧表面亲水上表面疏水的性质，而侧表面和上表面若经氧等离子体作用后又会出现都亲水的性质，进一步的，该有机光阻材料通常包含亚克力(acrylic)。
具体地，所述步骤S1中，通过利用第一掩膜板81对有机光阻材料曝光，该第一掩膜板81上具有用于形成像素开口35的第一图形811。
具体地，所述步骤S1中所形成的电极层21的材料为氧化铟锡。
步骤S2、如图5所示，在所述像素定义层30上涂布一层普通光阻材料，并通过一道黄光制程对其进行图案化处理，在所述像素定义层30上形成保 护光阻层40，以对所述像素定义层30的上表面进行保护，所述保护光阻层40对应于所述像素定义层30的像素开口35的上方设有贯穿开口45，所述贯穿开口45完全露出相对应的像素开口35，即露出了所述像素定义层30的侧表面。
优选地，所述步骤S2中，所述保护光阻层40上贯穿开口45既能够完全完全露出所对应的像素开口35，所述保护光阻层40又能够完全覆盖所述像素定义层30的上表面，即所述贯穿开口45的边缘与所对应的像素开口35的边缘重合；但是考虑到现有制程的精度问题，从而允许所述保护光阻层40上贯穿开口45的边缘相对于所对应的像素开口35的边缘向外扩张0-3微米，从而完全露出所对应的像素开口35。
具体地，所述步骤S2中通过一道黄光制程图案化形成保护光阻层40的具体过程为：在所述像素定义层30上涂布一层普通光阻材料后，提供第二掩膜板82，该第二掩膜板82上具有用于形成贯穿开口45的第二图形821，利用该第二掩膜板82对该层普通光阻材料进行曝光，然后对曝光后的普通光阻材料进行显影、烘烤，得到保护光阻层40。
具体地，所述第二图形821的形状与所述第一图形811的形状相对应，所述第二图形821的边缘到中心点的距离比第一图形811上相应边缘到中心点的距离大1-3μm。
步骤S3、如图6所示，在所述TFT基板10上方整面施加氧等离子体，对所述电极层21进行氧等离子体处理，去除其上表面上的残留光阻95，该过程中，被保护光阻层40所覆盖的像素定义层30的上表面未受到氧等离子体的影响，仍然具有疏水性。
具体地，在该步骤S3中，所述像素定义层30未被覆盖的表面，均会受到氧等离子体的影响而具有亲水性，即所述像素定义层30的侧表面仍保持亲水性，进一步地，该侧表面的水接触角大于5°小于40°，且所述像素定义层30上表面的未被保护光阻层40覆盖的部分，因受到氧等离子体的影响而改为具有亲水性，进一步地，该部分的水接触角大于5°小于40°。
步骤S4、如图7所示，去除像素定义层30上的保护光阻层40，得到OLED背板1。
具体地，所述电极层21用于构成OLED器件，所述电极层21用作OLED器件的阳极或阴极。
本发明的OLED背板的制作方法，在对电极层21进行氧等离子处理以去除残留光阻95之前，在上表面疏水侧表面亲水的像素定义层30上制作保护光阻层40，从而在进行氧等离子处理过程中，被保护光阻层40所覆盖 的像素定义层30的上表面不会受到氧等离子体的影响，仍然具有疏水性，从而在去除电极层21上残留光阻95的同时，又能保持像素定义层30上表面疏水侧表面亲水的性质，进而便于后续采用喷墨打印工艺制作OLED器件。
相应地，基于上述的OLED背板的制作方法，本发明还提供一种OLED面板的制作方法，包括以下步骤：按照上述OLED背板的制作方法制得OLED背板1，去除电极层21上残留光阻95并得到上表面疏水侧表面亲水的像素定义层30，该具体制作过程在此不再赘述；然后采用喷墨打印的方式在所述像素定义层30的像素开口35内形成有机功能层，所述有机功能层可设置为空穴注入层(Hole injection layer，HIL)、空穴传输层(Hole transport layer，HTL)、发光层(Emitting layer，EL)、电子传输层(Electron transport layer，ETL)、或电子注入层(Electron injection layer，EIL)。
综上所述，本发明提供的一种OLED背板的制作方法，在对电极层进行氧等离子处理以去除残留光阻之前，在上表面疏水侧表面亲水的像素定义层上制作保护光阻层，从而在进行氧等离子处理过程中，被保护光阻层所覆盖的像素定义层的上表面不会受到氧等离子体的影响，仍然具有疏水性，从而在去除电极层上残留光阻的同时，又能保持像素定义层上表面疏水侧表面亲水的性质，进而便于采用喷墨打印工艺制作OLED器件。本发明的OLED面板的制作方法，采用上述OLED背板的制作方法制作OLED背板，去除电极层上的残留光阻并得到上表面疏水侧表面亲水的像素定义层，然后通过喷墨打印的方式形成有机功能层，工艺简单，所制作的OLED器件性能更加稳定，使用寿命较长。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED背板的制作方法，包括以下步骤：
    步骤S1、提供一TFT基板，在所述TFT基板上沉积并图案化形成电极层，在所述电极层及TFT基板上涂布一层有机光阻材料，对该层有机光阻材料进行曝光、显影及烘烤后，得到像素定义层，所述像素定义层在对应于所述电极层的上方设有像素开口，所述像素定义层具有侧表面和上表面，此时所述像素定义层的侧表面具有亲水性，所述像素定义层的上表面具有疏水性，所述电极层的上表面上具有残留光阻；
    步骤S2、在所述像素定义层上涂布一层普通光阻材料，并通过一道黄光制程对其进行图案化处理，在所述像素定义层上形成保护光阻层，以对所述像素定义层的上表面进行保护，所述保护光阻层对应于所述像素定义层的像素开口的上方设有贯穿开口，所述贯穿开口完全露出相对应的像素开口；
    步骤S3、在所述TFT基板上方整面施加氧等离子体，对所述电极层进行氧等离子体处理，去除其上表面上的残留光阻，该过程中，被保护光阻层所覆盖的像素定义层的上表面未受到氧等离子体的影响，仍然具有疏水性；
    步骤S4、去除像素定义层上的保护光阻层，得到OLED背板。
  2. 如权利要求1所述的OLED背板的制作方法，其中，所述步骤S2中，所述保护光阻层上贯穿开口的边缘相对于所对应的像素开口的边缘向外扩张0-3微米，从而完全露出所对应的像素开口。
  3. 如权利要求1所述的OLED背板的制作方法，其中，所述步骤S1中，通过利用第一掩膜板对有机光阻材料曝光，该第一掩膜板上具有用于形成像素开口的第一图形。
  4. 如权利要求3所述的OLED背板的制作方法，其中，所述步骤S2中通过一道黄光制程图案化形成所述保护光阻层的具体过程为：在所述像素定义层上涂布一层普通光阻材料后，提供第二掩膜板，该第二掩膜板上具有用于形成贯穿开口的第二图形，利用该第二掩膜板对该层普通光阻材料进行曝光，然后对曝光后的普通光阻材料进行显影、烘烤，得到保护光阻层。
  5. 如权利要求4所述的OLED背板的制作方法，其中，所述第二图形的形状与所述第一图形的形状相对应，所述第二图形的边缘到中心点的距 离比所述第一图形上相应边缘到中心点的距离大1-3μm。
  6. 如权利要求1所述的OLED背板的制作方法，其中，所述步骤S1中所涂布的有机光阻材料包含亚克力。
  7. 如权利要求1所述的OLED背板的制作方法，其中，所述步骤S1中所形成的电极层的材料为氧化铟锡。
  8. 如权利要求1所述的OLED背板的制作方法，其中，所述电极层用于构成OLED器件，所述电极层用作OLED器件的阳极或阴极。
  9. 一种OLED面板的制作方法，包括以下步骤：按照如权利要求1所述的OLED背板的制作方法制得OLED背板，采用喷墨打印的方式在所述OLED背板的像素开口内形成有机功能层，所述有机功能层为OLED器件的空穴注入层、空穴传输层、发光层、电子传输层、或电子注入层。
  10. 一种OLED背板的制作方法，包括以下步骤：
    步骤S1、提供一TFT基板，在所述TFT基板上沉积并图案化形成电极层，在所述电极层及TFT基板上涂布一层有机光阻材料，对该层有机光阻材料进行曝光、显影及烘烤后，得到像素定义层，所述像素定义层在对应于所述电极层的上方设有像素开口，所述像素定义层具有侧表面和上表面，此时所述像素定义层的侧表面具有亲水性，所述像素定义层的上表面具有疏水性，所述电极层的上表面上具有残留光阻；
    步骤S2、在所述像素定义层上涂布一层普通光阻材料，并通过一道黄光制程对其进行图案化处理，在所述像素定义层上形成保护光阻层，以对所述像素定义层的上表面进行保护，所述保护光阻层对应于所述像素定义层的像素开口的上方设有贯穿开口，所述贯穿开口完全露出相对应的像素开口；
    步骤S3、在所述TFT基板上方整面施加氧等离子体，对所述电极层进行氧等离子体处理，去除其上表面上的残留光阻，该过程中，被保护光阻层所覆盖的像素定义层的上表面未受到氧等离子体的影响，仍然具有疏水性；
    步骤S4、去除像素定义层上的保护光阻层，得到OLED背板；
    其中，所述步骤S2中，所述保护光阻层上贯穿开口的边缘相对于所对应的像素开口的边缘向外扩张0-3微米，从而完全露出所对应的像素开口；
    其中，所述步骤S1中，通过利用第一掩膜板对有机光阻材料曝光，该第一掩膜板上具有用于形成像素开口的第一图形；
    其中，所述步骤S2中通过一道黄光制程图案化形成所述保护光阻层的具体过程为：在所述像素定义层上涂布一层普通光阻材料后，提供第二掩 膜板，该第二掩膜板上具有用于形成贯穿开口的第二图形，利用该第二掩膜板对该层普通光阻材料进行曝光，然后对曝光后的普通光阻材料进行显影、烘烤，得到保护光阻层；
    其中，所述第二图形的形状与所述第一图形的形状相对应，所述第二图形的边缘到中心点的距离比所述第一图形上相应边缘到中心点的距离大1-3μm。
  11. 如权利要求10所述的OLED背板的制作方法，其中，所述步骤S1中所涂布的有机光阻材料包含亚克力。
  12. 如权利要求10所述的OLED背板的制作方法，其中，所述步骤S1中所形成的电极层的材料为氧化铟锡。
  13. 如权利要求10所述的OLED背板的制作方法，其中，所述电极层用于构成OLED器件，所述电极层用作OLED器件的阳极或阴极。
PCT/CN2017/098175 2017-07-24 2017-08-18 Oled背板的制作方法与oled面板的制作方法 Ceased WO2019019236A1 (zh)

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